KR20240037964A - 광 검출 장치 및 그 제조 방법 그리고 전자 기기 - Google Patents

광 검출 장치 및 그 제조 방법 그리고 전자 기기 Download PDF

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KR20240037964A
KR20240037964A KR1020247002185A KR20247002185A KR20240037964A KR 20240037964 A KR20240037964 A KR 20240037964A KR 1020247002185 A KR1020247002185 A KR 1020247002185A KR 20247002185 A KR20247002185 A KR 20247002185A KR 20240037964 A KR20240037964 A KR 20240037964A
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film
light
filler
semiconductor layer
oxide
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Korean (ko)
Inventor
신이치로 노우도
다이치 나토리
히로야스 마츠가이
아츠시 야마모토
다카시 오이노우에
가나 구로기
고헤이 후쿠시마
고이치 다케우치
가이토 요코치
도시히토 이와세
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소니 세미컨덕터 솔루션즈 가부시키가이샤
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Publication of KR20240037964A publication Critical patent/KR20240037964A/ko
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • H01L27/14625—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • H01L27/14603—
    • H01L27/1462—
    • H01L27/14685—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020247002185A 2021-08-06 2022-07-28 광 검출 장치 및 그 제조 방법 그리고 전자 기기 Pending KR20240037964A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2021-130077 2021-08-06
JP2021130077 2021-08-06
PCT/JP2022/029175 WO2023013521A1 (ja) 2021-08-06 2022-07-28 光検出装置及びその製造方法並びに電子機器

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KR20240037964A true KR20240037964A (ko) 2024-03-22

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Country Status (7)

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US (1) US20250120205A1 (https=)
EP (1) EP4383333A4 (https=)
JP (1) JPWO2023013521A1 (https=)
KR (1) KR20240037964A (https=)
CN (1) CN117678073A (https=)
TW (1) TW202310382A (https=)
WO (1) WO2023013521A1 (https=)

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CN217386086U (zh) * 2022-05-25 2022-09-06 天津山河光电科技有限公司 感光组件、成像系统及光学电子设备
CN115327678B (zh) * 2022-09-01 2024-11-22 天津山河光电科技有限公司 双向光路系统、光学模组及光学设备
JPWO2024161881A1 (https=) * 2023-01-31 2024-08-08
US20240322056A1 (en) * 2023-03-21 2024-09-26 Visera Technologies Company Ltd. Optical device
TW202447946A (zh) * 2023-04-28 2024-12-01 日商索尼半導體解決方案公司 攝像裝置及電子機器
JP2024164446A (ja) * 2023-05-15 2024-11-27 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器
JP2025009510A (ja) * 2023-07-07 2025-01-20 ソニーグループ株式会社 光検出装置
JP2025016280A (ja) * 2023-07-21 2025-01-31 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2025121000A1 (ja) * 2023-12-07 2025-06-12 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2025121422A1 (ja) * 2023-12-07 2025-06-12 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2025158986A1 (ja) * 2024-01-24 2025-07-31 パナソニックＩｐマネジメント株式会社 光学素子
WO2025158987A1 (ja) * 2024-01-24 2025-07-31 パナソニックＩｐマネジメント株式会社 光学素子
WO2025164103A1 (ja) * 2024-01-31 2025-08-07 ソニーセミコンダクタソリューションズ株式会社 光検出装置、光学素子、および電子機器
WO2025182567A1 (ja) * 2024-02-26 2025-09-04 ソニーグループ株式会社 光検出装置および光検出システム
WO2025192164A1 (ja) * 2024-03-15 2025-09-18 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器
WO2025204244A1 (ja) * 2024-03-27 2025-10-02 ソニーセミコンダクタソリューションズ株式会社 光検出装置、光検出装置の製造方法、および電子機器
WO2025224901A1 (ja) * 2024-04-24 2025-10-30 ソニーセミコンダクタソリューションズ株式会社 光検出装置
JP2025170719A (ja) * 2024-05-07 2025-11-19 キヤノン株式会社 光学素子、光学系、および撮像装置
WO2025253793A1 (ja) * 2024-06-07 2025-12-11 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器
WO2025258003A1 (ja) * 2024-06-12 2025-12-18 Ｎｔｔ株式会社 光学素子
WO2025263193A1 (ja) * 2024-06-20 2025-12-26 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2026048314A1 (ja) * 2024-08-30 2026-03-05 ソニーセミコンダクタソリューションズ株式会社 光学素子、光検出装置、および電子機器
CN121646024A (zh) * 2024-09-04 2026-03-10 华为技术有限公司 图像传感器及其制备方法、摄像头模组、电子设备

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WO2023013521A1 (ja) 2023-02-09
JPWO2023013521A1 (https=) 2023-02-09
CN117678073A (zh) 2024-03-08
EP4383333A1 (en) 2024-06-12
TW202310382A (zh) 2023-03-01
EP4383333A4 (en) 2024-10-23
US20250120205A1 (en) 2025-04-10

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