JPWO2023013521A1 - - Google Patents

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Publication number
JPWO2023013521A1
JPWO2023013521A1 JP2023540303A JP2023540303A JPWO2023013521A1 JP WO2023013521 A1 JPWO2023013521 A1 JP WO2023013521A1 JP 2023540303 A JP2023540303 A JP 2023540303A JP 2023540303 A JP2023540303 A JP 2023540303A JP WO2023013521 A1 JPWO2023013521 A1 JP WO2023013521A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023540303A
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Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023013521A1 publication Critical patent/JPWO2023013521A1/ja
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11Anti-reflection coatings
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/30Polarising elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184Infrared image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/802Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8063Microlenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8067Reflectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/40Optical elements or arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/40Optical elements or arrangements
    • H10F77/413Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2023540303A 2021-08-06 2022-07-28 Pending JPWO2023013521A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021130077 2021-08-06
PCT/JP2022/029175 WO2023013521A1 (ja) 2021-08-06 2022-07-28 光検出装置及びその製造方法並びに電子機器

Publications (1)

Publication Number Publication Date
JPWO2023013521A1 true JPWO2023013521A1 (https=) 2023-02-09

Family

ID=85154528

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023540303A Pending JPWO2023013521A1 (https=) 2021-08-06 2022-07-28

Country Status (7)

Country Link
US (1) US20250120205A1 (https=)
EP (1) EP4383333A4 (https=)
JP (1) JPWO2023013521A1 (https=)
KR (1) KR20240037964A (https=)
CN (1) CN117678073A (https=)
TW (1) TW202310382A (https=)
WO (1) WO2023013521A1 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114873556B (zh) * 2022-05-16 2025-07-04 苏州山河光电科技有限公司 一种超表面光学元件的制作方法
CN217386086U (zh) * 2022-05-25 2022-09-06 天津山河光电科技有限公司 感光组件、成像系统及光学电子设备
CN115327678B (zh) * 2022-09-01 2024-11-22 天津山河光电科技有限公司 双向光路系统、光学模组及光学设备
JPWO2024161881A1 (https=) * 2023-01-31 2024-08-08
US20240322056A1 (en) * 2023-03-21 2024-09-26 Visera Technologies Company Ltd. Optical device
TW202447946A (zh) * 2023-04-28 2024-12-01 日商索尼半導體解決方案公司 攝像裝置及電子機器
JP2024164446A (ja) * 2023-05-15 2024-11-27 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器
JP2025009510A (ja) * 2023-07-07 2025-01-20 ソニーグループ株式会社 光検出装置
JP2025016280A (ja) * 2023-07-21 2025-01-31 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2025121000A1 (ja) * 2023-12-07 2025-06-12 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2025121422A1 (ja) * 2023-12-07 2025-06-12 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2025158986A1 (ja) * 2024-01-24 2025-07-31 パナソニックIpマネジメント株式会社 光学素子
WO2025158987A1 (ja) * 2024-01-24 2025-07-31 パナソニックIpマネジメント株式会社 光学素子
WO2025164103A1 (ja) * 2024-01-31 2025-08-07 ソニーセミコンダクタソリューションズ株式会社 光検出装置、光学素子、および電子機器
WO2025182567A1 (ja) * 2024-02-26 2025-09-04 ソニーグループ株式会社 光検出装置および光検出システム
WO2025192164A1 (ja) * 2024-03-15 2025-09-18 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器
WO2025204244A1 (ja) * 2024-03-27 2025-10-02 ソニーセミコンダクタソリューションズ株式会社 光検出装置、光検出装置の製造方法、および電子機器
WO2025224901A1 (ja) * 2024-04-24 2025-10-30 ソニーセミコンダクタソリューションズ株式会社 光検出装置
JP2025170719A (ja) * 2024-05-07 2025-11-19 キヤノン株式会社 光学素子、光学系、および撮像装置
WO2025253793A1 (ja) * 2024-06-07 2025-12-11 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器
WO2025258003A1 (ja) * 2024-06-12 2025-12-18 Ntt株式会社 光学素子
WO2025263193A1 (ja) * 2024-06-20 2025-12-26 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2026048314A1 (ja) * 2024-08-30 2026-03-05 ソニーセミコンダクタソリューションズ株式会社 光学素子、光検出装置、および電子機器
CN121646024A (zh) * 2024-09-04 2026-03-10 华为技术有限公司 图像传感器及其制备方法、摄像头模组、电子设备

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009157390A (ja) * 2004-09-01 2009-07-16 Panasonic Corp 固体撮像装置
JP2011040441A (ja) * 2009-08-06 2011-02-24 Panasonic Corp 固体撮像装置
JP2012182430A (ja) * 2011-02-09 2012-09-20 Canon Inc 光電変換装置
JP2015028960A (ja) * 2011-12-01 2015-02-12 ソニー株式会社 固体撮像装置および電子機器
US20170034500A1 (en) * 2015-07-29 2017-02-02 Samsung Electronics Co., Ltd. Imaging apparatus and image sensor including the same
WO2018092632A1 (ja) * 2016-11-21 2018-05-24 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、製造方法
WO2018230186A1 (ja) * 2017-06-15 2018-12-20 株式会社ニコン 撮像素子、撮像装置および撮像方法
WO2019124562A1 (ja) * 2017-12-22 2019-06-27 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
US20210091130A1 (en) * 2019-09-19 2021-03-25 Omnivision Technologies, Inc. Image sensor with micro-structured color filter
TWI725765B (zh) * 2020-03-10 2021-04-21 力晶積成電子製造股份有限公司 具有表面微柱體結構的固態影像感測器暨其製作方法

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JP2008066702A (ja) * 2006-08-10 2008-03-21 Matsushita Electric Ind Co Ltd 固体撮像素子及びカメラ
CN104698672B (zh) * 2015-03-03 2019-04-09 厦门天马微电子有限公司 滤色片及其制备方法
JP2018098641A (ja) 2016-12-13 2018-06-21 ソニーセミコンダクタソリューションズ株式会社 画像処理装置、画像処理方法、プログラム、および電子機器
JP6987529B2 (ja) 2017-05-15 2022-01-05 ソニーセミコンダクタソリューションズ株式会社 撮像素子、撮像素子の製造方法、電子機器、及び、撮像モジュール
JP7461294B2 (ja) 2017-08-31 2024-04-03 メタレンズ,インコーポレイテッド 透過型メタサーフェスレンズ統合

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009157390A (ja) * 2004-09-01 2009-07-16 Panasonic Corp 固体撮像装置
JP2011040441A (ja) * 2009-08-06 2011-02-24 Panasonic Corp 固体撮像装置
JP2012182430A (ja) * 2011-02-09 2012-09-20 Canon Inc 光電変換装置
JP2015028960A (ja) * 2011-12-01 2015-02-12 ソニー株式会社 固体撮像装置および電子機器
US20170034500A1 (en) * 2015-07-29 2017-02-02 Samsung Electronics Co., Ltd. Imaging apparatus and image sensor including the same
WO2018092632A1 (ja) * 2016-11-21 2018-05-24 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、製造方法
WO2018230186A1 (ja) * 2017-06-15 2018-12-20 株式会社ニコン 撮像素子、撮像装置および撮像方法
WO2019124562A1 (ja) * 2017-12-22 2019-06-27 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
US20210091130A1 (en) * 2019-09-19 2021-03-25 Omnivision Technologies, Inc. Image sensor with micro-structured color filter
TWI725765B (zh) * 2020-03-10 2021-04-21 力晶積成電子製造股份有限公司 具有表面微柱體結構的固態影像感測器暨其製作方法

Also Published As

Publication number Publication date
WO2023013521A1 (ja) 2023-02-09
CN117678073A (zh) 2024-03-08
EP4383333A1 (en) 2024-06-12
TW202310382A (zh) 2023-03-01
EP4383333A4 (en) 2024-10-23
US20250120205A1 (en) 2025-04-10
KR20240037964A (ko) 2024-03-22

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