KR20240012505A - 노광 장치 - Google Patents

노광 장치 Download PDF

Info

Publication number
KR20240012505A
KR20240012505A KR1020237044192A KR20237044192A KR20240012505A KR 20240012505 A KR20240012505 A KR 20240012505A KR 1020237044192 A KR1020237044192 A KR 1020237044192A KR 20237044192 A KR20237044192 A KR 20237044192A KR 20240012505 A KR20240012505 A KR 20240012505A
Authority
KR
South Korea
Prior art keywords
substrate
exposure
spatial light
light modulator
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237044192A
Other languages
English (en)
Korean (ko)
Inventor
마사키 가토
야스시 미즈노
Original Assignee
가부시키가이샤 니콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
Publication of KR20240012505A publication Critical patent/KR20240012505A/ko
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7034—Leveling
    • H01L24/03—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01951—Changing the shapes of bond pads
    • H01L2224/0362—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020237044192A 2021-07-12 2022-07-11 노광 장치 Pending KR20240012505A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2021-115325 2021-07-12
JP2021115325 2021-07-12
PCT/JP2022/027199 WO2023286724A1 (ja) 2021-07-12 2022-07-11 露光装置

Publications (1)

Publication Number Publication Date
KR20240012505A true KR20240012505A (ko) 2024-01-29

Family

ID=84919335

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237044192A Pending KR20240012505A (ko) 2021-07-12 2022-07-11 노광 장치

Country Status (6)

Country Link
US (1) US20240103372A1 (https=)
JP (1) JPWO2023286724A1 (https=)
KR (1) KR20240012505A (https=)
CN (1) CN117616344A (https=)
TW (1) TW202318110A (https=)
WO (1) WO2023286724A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026028795A1 (ja) * 2024-07-30 2026-02-05 株式会社ニコン 露光システム

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018081281A (ja) 2016-11-18 2018-05-24 キヤノン株式会社 露光装置、露光方法、および物品の製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11195579A (ja) * 1997-12-26 1999-07-21 Nikon Corp 露光装置及び露光方法
JP2001015408A (ja) * 1999-06-29 2001-01-19 Toshiba Corp レジストパターン形成装置及び基板検査装置
JP2000106345A (ja) * 1999-11-04 2000-04-11 Nikon Corp 露光装置及びその露光装置により製造されたデバイス、並びに露光方法及びその露光方法を用いたデバイス製造方法
JP2003243288A (ja) * 2002-02-15 2003-08-29 Canon Inc 加工装置
JP2004012901A (ja) * 2002-06-07 2004-01-15 Fuji Photo Film Co Ltd 描画装置
KR20070095947A (ko) * 2005-01-17 2007-10-01 후지필름 가부시키가이샤 패턴 형성재료, 패턴 형성장치 및 영구패턴 형성방법
JP4738227B2 (ja) * 2005-03-28 2011-08-03 富士フイルム株式会社 記録素子設定方法、画像記録方法及び装置
JP4823605B2 (ja) * 2005-08-09 2011-11-24 富士フイルム株式会社 露光装置、露光方法、及びパターン製造システム
JP2007052214A (ja) * 2005-08-17 2007-03-01 Nikon Corp 走査型露光装置及びマイクロデバイスの製造方法
JP2007115784A (ja) * 2005-10-18 2007-05-10 Nikon Corp 露光システム、露光方法、及びデバイス製造工場
JP5484808B2 (ja) * 2008-09-19 2014-05-07 株式会社ニューフレアテクノロジー 描画装置及び描画方法
EP2733728A1 (en) * 2011-07-15 2014-05-21 Nitto Denko Corporation Method for manufacturing electronic component and adhesive sheet used in method for manufacturing electronic component
JP6021444B2 (ja) * 2012-05-31 2016-11-09 株式会社東芝 荷電ビーム描画装置及び描画データ作成装置
KR102186362B1 (ko) * 2015-06-02 2020-12-04 삼성디스플레이 주식회사 기판 정렬 장치 및 기판 정렬 방법
JP6353487B2 (ja) * 2016-05-26 2018-07-04 株式会社サーマプレシジョン 投影露光装置及びその投影露光方法
JP2017211533A (ja) * 2016-05-26 2017-11-30 株式会社サーマプレシジョン 投影露光装置及びその投影露光方法
WO2019231518A1 (en) * 2018-05-31 2019-12-05 Applied Materials, Inc. Multi-substrate processing on digital lithography systems
CN111290217B (zh) * 2018-12-06 2022-12-13 苏州苏大维格科技集团股份有限公司 用于光刻基片的承载台、光刻机及基片光刻的方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018081281A (ja) 2016-11-18 2018-05-24 キヤノン株式会社 露光装置、露光方法、および物品の製造方法

Also Published As

Publication number Publication date
US20240103372A1 (en) 2024-03-28
CN117616344A (zh) 2024-02-27
TW202318110A (zh) 2023-05-01
WO2023286724A1 (ja) 2023-01-19
JPWO2023286724A1 (https=) 2023-01-19

Similar Documents

Publication Publication Date Title
US8734701B2 (en) Imprint apparatus and method of manufacturing article
US20230400773A1 (en) Exposure apparatus and wiring pattern forming method
TW201802616A (zh) 曝光裝置、移動體驅動系統、圖案形成裝置、及曝光方法、以及元件製造方法
JP2009200105A (ja) 露光装置
KR20100102580A (ko) 노광 장치, 노광 방법 및 디바이스 제조 방법
WO2009148185A1 (en) Surface position detecting apparatus, exposure apparatus, surface position detecting method, and device manufacturing method
JP7653482B2 (ja) 露光装置およびシステム
JP2007115784A (ja) 露光システム、露光方法、及びデバイス製造工場
JP2026002854A (ja) パターン決定方法、半導体デバイス作成方法、及び露光装置
US20240103372A1 (en) Exposure apparatus
JP2010087310A (ja) 露光装置およびデバイス製造方法
US20240142877A1 (en) Exposure apparatus and measurement system
KR102555768B1 (ko) 노광 방법, 노광 장치, 물품 제조 방법 및 계측 방법
KR102958584B1 (ko) 노광 장치 및 배선 패턴 형성 방법
KR20230031140A (ko) 묘화 장치 및 묘화 방법
JP2026074216A (ja) 露光装置及び配線パターン形成方法
WO2026028795A1 (ja) 露光システム
JP4961717B2 (ja) デバイス製造処理システム、露光装置及び露光方法、測定検査装置及び測定検査方法、並びにデバイス製造方法
TW202605511A (zh) 曝光系統
JP2025072046A (ja) 露光装置、物品の製造方法、及び露光方法
CN117631467A (zh) 信息处理装置、信息处理方法、存储介质、曝光装置、曝光方法和物品制造方法
JP2012195379A (ja) 重ね合わせ精度計測方法、露光装置、及びデバイス製造方法
JP2010251409A (ja) 露光方法、露光装置及びデバイス製造方法
JP2009099694A (ja) 露光装置およびデバイス製造方法

Legal Events

Date Code Title Description
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13 Pre-grant limitation requested

Free format text: ST27 STATUS EVENT CODE: A-2-3-E10-E13-LIM-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

D21 Rejection of application intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000