KR20230058180A - 열적 어닐링 과정 및 용매 증기 어닐링 과정에 의해 제조된 향상된 벌크 이종접합 소자 - Google Patents

열적 어닐링 과정 및 용매 증기 어닐링 과정에 의해 제조된 향상된 벌크 이종접합 소자 Download PDF

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KR20230058180A
KR20230058180A KR1020237013164A KR20237013164A KR20230058180A KR 20230058180 A KR20230058180 A KR 20230058180A KR 1020237013164 A KR1020237013164 A KR 1020237013164A KR 20237013164 A KR20237013164 A KR 20237013164A KR 20230058180 A KR20230058180 A KR 20230058180A
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South Korea
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solvent
annealing
bulk heterojunction
photoactive material
cast
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Korean (ko)
Inventor
스티븐 알 포리스트
마크 이 톰슨
고당 웨이
시이 왕
Original Assignee
더 리젠츠 오브 더 유니버시티 오브 미시간
유니버시티 오브 써던 캘리포니아
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Application filed by 더 리젠츠 오브 더 유니버시티 오브 미시간, 유니버시티 오브 써던 캘리포니아 filed Critical 더 리젠츠 오브 더 유니버시티 오브 미시간
Priority to KR1020267016373A priority Critical patent/KR20260113028A/ko
Publication of KR20230058180A publication Critical patent/KR20230058180A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/441—Thermal treatment, e.g. annealing in the presence of a solvent vapour in the presence of solvent vapors, e.g. solvent vapour annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
KR1020237013164A 2010-04-08 2011-04-06 열적 어닐링 과정 및 용매 증기 어닐링 과정에 의해 제조된 향상된 벌크 이종접합 소자 Ceased KR20230058180A (ko)

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KR1020267016373A KR20260113028A (ko) 2010-04-08 2011-04-06 열적 어닐링 과정 및 용매 증기 어닐링 과정에 의해 제조된 향상된 벌크 이종접합 소자

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US32203910P 2010-04-08 2010-04-08
US61/322,039 2010-04-08
US39364610P 2010-10-15 2010-10-15
US61/393,646 2010-10-15
KR1020207029499A KR20200127032A (ko) 2010-04-08 2011-04-06 열적 어닐링 과정 및 용매 증기 어닐링 과정에 의해 제조된 향상된 벌크 이종접합 소자
PCT/US2011/031439 WO2011127186A1 (en) 2010-04-08 2011-04-06 Enhanced bulk heterojunction devices prepared by thermal and solvent vapor annealing processes

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KR1020207029499A Division KR20200127032A (ko) 2010-04-08 2011-04-06 열적 어닐링 과정 및 용매 증기 어닐링 과정에 의해 제조된 향상된 벌크 이종접합 소자

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KR1020237013164A Ceased KR20230058180A (ko) 2010-04-08 2011-04-06 열적 어닐링 과정 및 용매 증기 어닐링 과정에 의해 제조된 향상된 벌크 이종접합 소자
KR1020127029251A Ceased KR20130094700A (ko) 2010-04-08 2011-04-06 열적 어닐링 과정 및 용매 증기 어닐링 과정에 의해 제조된 향상된 벌크 이종접합 소자
KR1020187027845A Ceased KR20180108918A (ko) 2010-04-08 2011-04-06 열적 어닐링 과정 및 용매 증기 어닐링 과정에 의해 제조된 향상된 벌크 이종접합 소자
KR1020207029499A Ceased KR20200127032A (ko) 2010-04-08 2011-04-06 열적 어닐링 과정 및 용매 증기 어닐링 과정에 의해 제조된 향상된 벌크 이종접합 소자
KR1020267016373A Pending KR20260113028A (ko) 2010-04-08 2011-04-06 열적 어닐링 과정 및 용매 증기 어닐링 과정에 의해 제조된 향상된 벌크 이종접합 소자

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KR1020127029251A Ceased KR20130094700A (ko) 2010-04-08 2011-04-06 열적 어닐링 과정 및 용매 증기 어닐링 과정에 의해 제조된 향상된 벌크 이종접합 소자
KR1020187027845A Ceased KR20180108918A (ko) 2010-04-08 2011-04-06 열적 어닐링 과정 및 용매 증기 어닐링 과정에 의해 제조된 향상된 벌크 이종접합 소자
KR1020207029499A Ceased KR20200127032A (ko) 2010-04-08 2011-04-06 열적 어닐링 과정 및 용매 증기 어닐링 과정에 의해 제조된 향상된 벌크 이종접합 소자
KR1020267016373A Pending KR20260113028A (ko) 2010-04-08 2011-04-06 열적 어닐링 과정 및 용매 증기 어닐링 과정에 의해 제조된 향상된 벌크 이종접합 소자

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US (1) US9768402B2 (cg-RX-API-DMAC7.html)
EP (1) EP2556548B1 (cg-RX-API-DMAC7.html)
JP (1) JP5933524B2 (cg-RX-API-DMAC7.html)
KR (5) KR20230058180A (cg-RX-API-DMAC7.html)
CN (1) CN102939673B (cg-RX-API-DMAC7.html)
AU (1) AU2011237636A1 (cg-RX-API-DMAC7.html)
CA (1) CA2795742A1 (cg-RX-API-DMAC7.html)
TW (2) TWI612683B (cg-RX-API-DMAC7.html)
WO (1) WO2011127186A1 (cg-RX-API-DMAC7.html)

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KR102063109B1 (ko) * 2012-07-11 2020-01-08 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN104919615A (zh) * 2012-11-22 2015-09-16 密歇根大学董事会 在有机光伏器件的沉积后加工期间使用反向准外延来修改有序性
CN103236503B (zh) * 2013-04-22 2015-07-01 国家纳米科学中心 一种聚合物太阳能电池及其制备方法
KR102185609B1 (ko) * 2013-06-20 2020-12-02 닛산 가가쿠 가부시키가이샤 n형 유기 반도체 박막의 제조 방법
TW201501340A (zh) * 2013-06-27 2015-01-01 行政院原子能委員會核能研究所 製備大面積有機太陽能電池之方法
JP2015165529A (ja) * 2014-02-28 2015-09-17 セイコーエプソン株式会社 有機半導体膜の製造方法、有機半導体膜、薄膜トランジスタ、アクティブマトリクス装置、電気光学装置および電子機器
KR101515118B1 (ko) * 2014-03-12 2015-06-05 포항공과대학교 산학협력단 C60 및 공액계 유기 분자의 수직성장 나노 구조체의 제조 방법
CN106816533B (zh) * 2017-03-09 2019-05-31 南京邮电大学 一种酞菁衍生物薄膜作为阴极缓冲层的倒置有机太阳能电池及其制备方法
CN108807675A (zh) * 2018-05-07 2018-11-13 南京邮电大学 一种表面钝化钙钛矿薄膜的太阳能电池制备方法
KR20220062297A (ko) * 2019-08-16 2022-05-16 유비쿼터스 에너지 인코포레이티드 태양 전지를 위한 버퍼 및 색 조정 층으로써의 파라페닐렌
CN111628091A (zh) * 2020-06-08 2020-09-04 西北工业大学 一种溶剂浴辅助热处理改善钙钛矿薄膜质量的方法

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Publication number Publication date
US9768402B2 (en) 2017-09-19
KR20180108918A (ko) 2018-10-04
JP2013527978A (ja) 2013-07-04
TW201210049A (en) 2012-03-01
CA2795742A1 (en) 2011-10-13
KR20130094700A (ko) 2013-08-26
EP2556548A1 (en) 2013-02-13
CN102939673B (zh) 2018-05-15
TW201715739A (zh) 2017-05-01
AU2011237636A1 (en) 2012-11-08
KR20200127032A (ko) 2020-11-09
US20130210189A1 (en) 2013-08-15
TWI577035B (zh) 2017-04-01
WO2011127186A1 (en) 2011-10-13
KR20260113028A (ko) 2026-07-21
JP5933524B2 (ja) 2016-06-08
TWI612683B (zh) 2018-01-21
EP2556548B1 (en) 2022-02-23
CN102939673A (zh) 2013-02-20

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