KR20220136402A - 성막 장치, 성막 장치의 제어 장치 및 성막 방법 - Google Patents
성막 장치, 성막 장치의 제어 장치 및 성막 방법 Download PDFInfo
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- KR20220136402A KR20220136402A KR1020227030318A KR20227030318A KR20220136402A KR 20220136402 A KR20220136402 A KR 20220136402A KR 1020227030318 A KR1020227030318 A KR 1020227030318A KR 20227030318 A KR20227030318 A KR 20227030318A KR 20220136402 A KR20220136402 A KR 20220136402A
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- film
- process chamber
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- forming
- gas
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- 238000000034 method Methods 0.000 title claims abstract description 820
- 230000008569 process Effects 0.000 claims abstract description 667
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 89
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- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 25
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- LDXJRKWFNNFDSA-UHFFFAOYSA-N 2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound C1CN(CC2=NNN=C21)CC(=O)N3CCN(CC3)C4=CN=C(N=C4)NCC5=CC(=CC=C5)OC(F)(F)F LDXJRKWFNNFDSA-UHFFFAOYSA-N 0.000 description 12
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 12
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- 230000007723 transport mechanism Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32871—Means for trapping or directing unwanted particles
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020065522 | 2020-04-01 | ||
| JPJP-P-2020-065522 | 2020-04-01 | ||
| PCT/JP2020/041999 WO2021199479A1 (ja) | 2020-04-01 | 2020-11-11 | 成膜装置、成膜装置の制御装置及び成膜方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20220136402A true KR20220136402A (ko) | 2022-10-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020227030318A KR20220136402A (ko) | 2020-04-01 | 2020-11-11 | 성막 장치, 성막 장치의 제어 장치 및 성막 방법 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20230002886A1 (ja) |
| JP (1) | JP6932873B1 (ja) |
| KR (1) | KR20220136402A (ja) |
| CN (2) | CN115427606B (ja) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0250959A (ja) | 1988-08-10 | 1990-02-20 | Nok Corp | 希土類金属薄膜の製膜方法および製膜装置 |
| JPH07310180A (ja) | 1994-05-12 | 1995-11-28 | Ibiden Co Ltd | 低圧環境下での薄膜形成方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0499271A (ja) * | 1990-08-10 | 1992-03-31 | Olympus Optical Co Ltd | 多層薄膜の作製方法およびその装置 |
| JPH0637074A (ja) * | 1992-07-17 | 1994-02-10 | Fujitsu Ltd | 半導体製造装置のクリーニング方法 |
| JP3593363B2 (ja) * | 1994-08-10 | 2004-11-24 | 株式会社東芝 | 半導体薄膜を具備するアクティブマトリックス型液晶表示装置の製造方法 |
| JPH09320963A (ja) * | 1996-05-20 | 1997-12-12 | Applied Materials Inc | Ｃｖｄチャンバを清掃した後に調整するための方法 |
| JP2010106290A (ja) * | 2008-10-28 | 2010-05-13 | Showa Denko Kk | 成膜装置および成膜方法、磁気記録媒体、磁気記録再生装置 |
| JP5998654B2 (ja) * | 2012-05-31 | 2016-09-28 | 東京エレクトロン株式会社 | 真空処理装置、真空処理方法及び記憶媒体 |
| JP6277926B2 (ja) * | 2014-09-30 | 2018-02-14 | 住友金属鉱山株式会社 | 成膜装置および積層体フィルムと電極基板フィルムの各製造方法 |
| JP6352436B2 (ja) * | 2014-10-10 | 2018-07-04 | キヤノンアネルバ株式会社 | 成膜装置 |
| CN204898063U (zh) * | 2015-09-16 | 2015-12-23 | 中国工程物理研究院激光聚变研究中心 | 一种铌溅射泵及真空系统 |
-
2020
- 2020-11-11 CN CN202080099470.1A patent/CN115427606B/zh active Active
- 2020-11-11 KR KR1020227030318A patent/KR20220136402A/ko not_active Application Discontinuation
- 2020-11-11 JP JP2021512593A patent/JP6932873B1/ja active Active
- 2020-11-11 CN CN202311487538.5A patent/CN117535632A/zh active Pending
-
2022
- 2022-09-09 US US17/941,389 patent/US20230002886A1/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0250959A (ja) | 1988-08-10 | 1990-02-20 | Nok Corp | 希土類金属薄膜の製膜方法および製膜装置 |
| JPH07310180A (ja) | 1994-05-12 | 1995-11-28 | Ibiden Co Ltd | 低圧環境下での薄膜形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115427606A (zh) | 2022-12-02 |
| US20230002886A1 (en) | 2023-01-05 |
| CN115427606B (zh) | 2024-01-02 |
| JPWO2021199479A1 (ja) | 2021-10-07 |
| CN117535632A (zh) | 2024-02-09 |
| JP6932873B1 (ja) | 2021-09-08 |
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