KR20220136402A - Film-forming apparatus, control apparatus of film-forming apparatus, and film-forming method - Google Patents

Abstract

The film forming apparatus in this invention has a process chamber, and the processing part which is installed in the process chamber and forms an adhesion film. The inner wall surface of the process chamber is formed of a substance having a large getter effect with respect to the gas or water (H ₂ O) remaining in the process chamber.

Description

Film-forming apparatus, control apparatus of film-forming apparatus, and film-forming method

The present invention relates to a film forming apparatus for forming a film on the surface of a substrate including a printed circuit board and a film substrate, a control apparatus for the film forming apparatus, and a film forming method.

In the mounting process of mounting an electronic component on the base material containing a printed circuit board and a film board|substrate, the adhesive layer used as the base of wiring connected to an electronic component, and the seed layer for forming a wiring by plating are formed. A plating method or a sputtering method is used for formation of each layer, for example.

Japanese Patent Application Laid-Open No. 7-310180 Japanese Patent Laid-Open No. 2-50959

For example, in Patent Document 1, in order to form a thin film excellent in adhesion in a short time, the gas in the vacuum chamber is exhausted by vacuum evacuation, and then a gas discharge/replacement step of introducing a rare gas into the vacuum chamber; A method for forming a thin film in a low-pressure rare gas environment comprising a film forming step of adhering a thin film forming material onto an adherend in a rare gas environment, wherein the film forming step is performed after performing the gas evacuation/replacement step at least twice or more. This is described.

However, in the method for forming a thin film described in Patent Document 1, hydrogen or oxygen from water (H ₂ O) gas is mixed at the interface between the adhesion film and the substrate and in the film of the adhesion film, and sufficient adhesion between the adhesion film and the substrate is not obtained. .

In Patent Document 2, in order to form a pure rare-earth metal thin film, in a vacuum chamber of a magnetron-type sputtering apparatus, a main cathode mounted with a rare-earth metal main target, a substrate held by a substrate holder opposite the main target, and the substrate holder An apparatus for forming a rare-earth metal thin film is described in which auxiliary cathodes to which an active metal auxiliary target is attached are respectively provided toward the inner wall side of the chamber at a narrow position of .

However, in the film forming apparatus described in Patent Document 2, since the auxiliary cathode to which the active metal auxiliary target is attached faces the chamber inner wall side from the narrow position of the substrate and the substrate holder, residual oxygen or nitrogen in the space other than the chamber inner wall side It is insufficient as a getter that captures the back.

The present invention was made in view of the problems of the prior art, and an object of the present invention is to provide a film forming apparatus, a control apparatus for a film forming apparatus, and a film forming method capable of improving the adhesion between a substrate and an adhesion film without reducing productivity.

In order to achieve the above object, the invention according to claim 1 is a film forming apparatus having a process chamber and a processing unit installed in the process chamber to form an adhesion film on a substrate, wherein an inner wall surface of the process chamber is disposed in the process chamber A film forming apparatus characterized in that it is formed of a material having a large getter effect with respect to residual gas or water (H ₂ O).

In order to achieve the above object, the invention according to claim 5 includes a process chamber, a processing unit installed in the process chamber to form an adhesive film on a substrate, an exhaust unit capable of evacuating the inside of the process chamber; A control apparatus for a film forming apparatus having a gas introduction unit for introducing a gas for forming the adhesion film, the control apparatus comprising a storage unit for storing a control program, wherein the control program is configured to be performed in the process chamber and in the process chamber A first step of forming a film of a material having a large getter effect with respect to residual gas or water (H ₂ O), a second step of evacuating the inside of the process chamber for a predetermined time after the first step, and after the second step , a third step of forming a film in the process chamber with a material having a large getter effect on the gas or water (H ₂ O) remaining in the process chamber, and evacuating the inside of the process chamber for a predetermined time after the third step a fourth step and a step of forming an adhesive film on a substrate installed in the process chamber after the fourth step, wherein the time of the first step or the third step is P1, the first step and the When the total time of the second process or the total time of the third process and the fourth process is P, the exhaust part and the gas introduction part are such that the duty ratio D=P1/P is 34% or more and 66% or less. It is made as a control device characterized in that to control the.

In order to achieve the above object, the invention according to claim 9 provides a first step of forming a film of a substance having a large getter effect with respect to gas or water (H ₂ O) remaining in the process chamber in a process chamber; For a predetermined time after the process, a second process of evacuating the inside of the process chamber, and after the second process, a substance having a large getter effect on the gas or water (H ₂ O) remaining in the process chamber is added into the process chamber. A third step of forming a film, a fourth step of evacuating the inside of the process chamber for a predetermined time after the third step, and a step of forming an adhesion film on a substrate installed in the process chamber after the fourth step It was done by a film-forming method comprising a.

ADVANTAGE OF THE INVENTION According to the film-forming apparatus, the control apparatus of a film-forming apparatus, and the film-forming method which concern on this invention, the adhesiveness of a base material and an adhesive film can be improved without reducing productivity.

Other features and advantages of the present invention will become apparent from the following description with reference to the accompanying drawings. In addition, in an accompanying drawing, the same reference number is attached|subjected to the same or similar structure.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view taken along a vertical direction of a film forming apparatus according to a first embodiment of the present invention.
Fig. 2 is a diagram showing a schematic configuration of a control system in a process chamber of the film forming apparatus according to the first embodiment of the present invention;
Fig. 3 is a view showing the flow of the film forming method of Example 1-1, Example 1-2, and Example 1-3 of the first embodiment of the present invention;
Fig. 4 is a diagram showing specific operation examples of the film-forming procedure of Examples 1-1, 1-2, and 1-3 of the first embodiment of the present invention;
Fig. 5 is a diagram showing specific operation examples of the film-forming procedure of Examples 1-1, 1-2, and 1-3 of the first embodiment of the present invention;
Fig. 6 is a diagram showing a specific operation example of the film-forming procedure of Example 1-1, Example 1-2, and Example 1-3 of the first embodiment of the present invention;
Fig. 7 is a diagram showing a specific operation example of a film forming procedure in Example 1-1, Example 1-2, and Example 1-3 of the first embodiment of the present invention;
Fig. 8 is a diagram showing specific operation examples of the film-forming procedure of Examples 1-1, 1-2, and 1-3 of the first embodiment of the present invention;
Fig. 9 is a schematic cross-sectional view of a film forming apparatus according to a second embodiment of the present invention cut in a plane parallel to a horizontal plane;
Fig. 10 is a diagram showing a schematic configuration of a control system in a load lock chamber and a process chamber of the film forming apparatus according to the second embodiment of the present invention;
It is a figure which shows the flow of the film-forming method of Example 1-1, Example 1-2, and Example 1-3 of 2nd Embodiment of this invention.
It is a figure which shows the flow of the film-forming method of Example 2-1, Example 2-2, and Example 2-3 of 2nd Embodiment of this invention.
It is a figure which shows the flow of the film-forming method of Example 3-1, Example 3-2, and Example 3-3 of 2nd Embodiment of this invention.
Fig. 14 is a diagram showing a flow of a film forming method in a conventional process;
Fig. 15 is a diagram showing an example of an output signal of a gas introduction system in a getter step of the present invention (first embodiment and second embodiment);
Fig. 16 is a diagram showing an example of the output signal of the power supply IG in the getter process of the present invention (the first embodiment and the second embodiment);
Fig. 17 is a getter process when the film formation method of the first embodiment (Example 1-2), Embodiment 2 (Example 1-2, Example 2-2, Example 3-2) and the conventional process is applied. A diagram showing the relationship between the time and partial pressure of water (H ₂ O) in the process chamber after the getter process.
Fig. 18 shows the first embodiment (Example 1-2), the second embodiment (Example 1-2, Example 2-2, and Example 3-2) and the duty at the time of using the film-forming method of the conventional process. A diagram showing the relationship between the ratio and the partial pressure of water (H ₂ O) in the process chamber after the getter process.
Fig. 19 shows exhaust gas according to the first embodiment (Example 1-2), the second embodiment (Example 1-2, Example 2-2, and Example 3-2) and the film-forming method of the conventional process. A diagram showing the relationship between the operation and the partial pressure of water (H ₂ O) in the process chamber.

MEANS TO SOLVE THE PROBLEM This inventor discovered this invention from the following knowledge. The inventor's knowledge is demonstrated using FIG.1, FIG.2, and FIG.3.

(First embodiment)

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which cut|disconnected the film forming apparatus of 1st Embodiment of this invention in the surface along a perpendicular direction. Here, the XY plane is a plane parallel to the horizontal plane, and the Z axis is an axis parallel to the vertical direction.

The first major feature of the film forming apparatus of the present invention is that the inner wall surface of the process chamber 50 is formed of a material having a large getter effect with respect to the gas or water (H ₂ O) remaining in the process chamber 50 (防着板) (MS1) is provided, and functions as a getter material supply source (MS1). The material having a large getter effect is, for example, titanium (Ti), and is preferably a material for the adhesion film. The adhesion film is preferably a film serving as a base for wiring connected to an electronic component on a substrate, Ti film, TiN film, Ta film, TaN film, Ni film, Cr film, NiCr alloy film, Ta alloy film, Cu alloy film It is preferable to be

The deposition preventing plate MS1 is preferably provided on the upper surface of the inner wall of the process chamber 50 facing the substrate S, but is provided on both sides of the inner wall of the process chamber 50 that does not face the substrate S. also be

As shown in FIG. 1 , the film forming apparatus of the present invention comprises a process chamber 50 and an adhesion film installed in the process chamber 50 and serving as a base for wiring connected to electronic components on a substrate S. The processing part FF1, the exhaust part V50 which can evacuate the inside of the process chamber 50, the gas introduction part G1 which introduces the gas for forming the said adhesion film into the process chamber 50, and the process chamber 50 ), a holding unit 60 holding the substrate S, and a driving unit (shown in the figure) for moving the holding unit 60 holding the substrate S so that the substrate S passes through the film formation region in the process chamber 50 . ), a cooling unit (not shown) for cooling the holding unit 60 , and a control device (not shown) for controlling the exhaust unit V50 and the gas introduction unit G1 . The details of the control device will be described with reference to FIG. 2 to be described later.

The control device includes a storage unit that stores a control program.

The processing unit FF1 includes a plurality of targets T1 and T2 and a rotating cathode that rotates a support holding the ion gun I1.

The target T1 is, for example, titanium (Ti), which is a material having a large getter effect with respect to the gas or water (H ₂ O) remaining in the process chamber 50 , and an adhesion film formed on the substrate S. It is preferable that it is a material of (Ti film, TiN film, Ta film, TaN film, Ni film, Cr film, NiCr alloy film, Ta alloy film, Cu alloy film).

The target T2 is, for example, copper (Cu), and is preferably a material of a seed film formed on the adhesion film. The seed film is preferably a film for forming wiring formed on the adhesion film, and is preferably a Cu film, a CuAl alloy film, or a CuV alloy film.

As described above, on the inner wall surface of the process chamber 50, a deposition preventing plate having a large getter effect with respect to the gas or water (H ₂ O) remaining in the process chamber 50 is provided, and as a getter material supply source (MS) function

In this state, when a voltage (not shown) is applied to the ion gun I1 to generate a plasma of Ar gas, for example, Ti deposition preventing plate MS1 is sputtered and a film formation area FFA (substrate S) is formed. The Ti film can be adhered to the inner wall of the process chamber 50 (on the side opposite to the polarizer) and the magnetic pole of the ion gun I1.

Moreover, instead of using the ion gun I1, you may use the target T1 made from Ti, for example. In this case, the target T1 is made to face other than the film-forming area|region FFA (the side which does not oppose the board|substrate S). In this state, when a voltage is applied to the target T1 to plasma the Ar gas, a Ti film is formed on the deposition preventing plate MS1, and processes other than the deposition area FFA (the side that does not face the substrate S) A material having a large getter effect with respect to gas or water (H ₂ O) remaining in the process chamber 50 may be attached to the inner wall of the chamber 50 .

2 is a block diagram showing a schematic configuration of a control system of a process chamber 50 in the film forming apparatus 1 according to the first embodiment of the present invention.

In FIG. 2 , the control device 1000 is a control unit serving as a control unit for controlling the process chamber 50 of the film forming apparatus 1 . The control device 1000 includes a CPU 1001 that executes processing operations such as various arithmetic, control, and discrimination, and control programs such as processing to be described later in FIGS. 3 to 9 that are executed by the CPU 1001 . It has a ROM 1002 (also referred to as a "storage section") for storing the like. Further, the control device 1000 includes a RAM 1003 for temporarily storing data, input data, and the like during a processing operation of the CPU 1001 , a nonvolatile memory 1004 , and the like. Further, in the control device 1000 , an input operation unit 1005 including a keyboard or various switches for inputting predetermined commands or data, etc., and a display unit for performing various displays including input and setting states of the film forming apparatus 1 , etc. (1006) is connected. Further, in the control device 1000 , a power supply (SP) 1022 for a sputtering cathode, a power supply (IG) 1023 for an ion gun, a gas introduction system 1024 , and a substrate holder driving mechanism 1025 in the process chamber 50 . ), a pressure gauge 1026, a holder transfer mechanism 1027, a cathode rotation mechanism 1028, an exhaust unit (V50: 1030), etc. are connected via drive circuits 1011 to 1017 and 1029, respectively. .

(Example 1-1)

It is a figure which shows the flow of the film-forming method of Example 1-1, Example 1-2, and Example 1-3 of 1st Embodiment of this invention. A major feature of the film forming method of the present invention is that, before the adhesion film forming step of forming an adhesion film on the substrate S provided in the process chamber 50 shown in FIG. 1 , in the process chamber 50 , the process chamber 50 A first process (step 102) of forming a film of a substance having a large getter effect with respect to the gas or water (H ₂ O) remaining therein, and evacuating the inside of the process chamber 50 for a predetermined time after the first process (step 102) The second step (step 103) was performed at least twice or more. As shown in FIG. 3 , in the film forming method of the present invention, in the process chamber 50 , the first step of forming a film of a substance having a large getter effect with respect to the gas or water (H ₂ O) remaining in the process chamber 50 . (Step 102), a second process (Step 103) of evacuating the inside of the process chamber 50 for a predetermined time after the first process (Step 102), and a second process (Step 103) After the second process (Step 103), the inside of the process chamber 50 is , a third process (step 104) of forming a film of a substance having a large getter effect with respect to the gas or water (H ₂ O) remaining in the process chamber 50, and a predetermined time after the third process (step 104), the process chamber ( 50) After the fourth step (step 105) of evacuating the interior, and after the fourth step (step 105), an adhesive film forming step (step 107) of forming an adhesive film on the substrate S installed in the process chamber 50 includes Hereinafter, in this specification, the "getter process" is a first process of forming a film of a substance having a large getter effect with respect to the "gas or water (H ₂ O) remaining in the process chamber 50 ," shown in FIG. 3 . (Step 102 )” and “The second step of evacuating the inside of the process chamber 50 for a predetermined time after the first step (Step 102 ) (Step 103 )”, or “Gas or water remaining in the process chamber 50 ” A third step (step 104) of forming a film of a substance having a large getter effect on (H ₂ O)” and a fourth step (step 104) of evacuating the inside of the process chamber 50 for a predetermined time in the third step (step 104) 105)”.

The "getter process" refers to a process of performing the getter process at least twice or more. "Step 102 - Step 105" shown in FIG. 3 is called "getter process". Therefore, in this specification, performing (step 102 and step 103) or (step 104 and step 105) shown in FIG. 3 after step 104 shown in FIG. 3 is also called "getter process".

As shown in FIG. 3, before the 1st process of step 102, the etching process of etching the surface of the base material S (step 101), after the 4th process of step 105, the etching process of etching the surface of the base material S (Step 106), before the 1st process of step 102, and after the 4th process of step 105, you may include the etching process (step 101 and step 106) of etching the surface of the base material S.

As shown in FIG. 3 , after the adhesion film formation process (step 107), a seed film formation process (step 107) of forming a seed film for forming wiring on the adhesion film may be included.

It is preferable that the base material S of step 101 or step 102 is any one of the resin film fixed to the Si substrate, glass-made, or resin-made rectangular-shaped member and a support body.

The adhesion film in step 107 is preferably one of a Ti film, a TiN film, a Ta film, a TaN film, a Ni film, a Cr film, a NiCr alloy film, a Ta alloy film, and a Cu alloy film.

The seed film of step 108 is preferably any one of a Cu film, a CuAl alloy film, and a CuV alloy film.

When the etching process of Step 101 or Step 106 is performed, the holder holding the plurality of targets and the ion gun is rotated to direct the ion gun I1 toward the film formation area FFA (the substrate S side). After the pressure in the process chamber 50 is stabilized from the gas introduction part G1, a voltage is applied to the ion gun I1 to convert the Ar gas into a plasma. And the base material S is etched. When the etching process of Step 101 or Step 106 is completed, the voltage application to the ion gun I1 is stopped.

When the first step of step 102 or the third step of step 104 is performed, the holder for holding the plurality of targets and the ion gun is rotated to move the ion gun I1 other than the film formation area FFA (the substrate S and the non-opposite side). On the inner wall of the chamber of the process chamber 50 other than the film formation area FFA, a deposition preventing plate MS1 is provided as a getter material supply source MS1. In this state, a voltage is applied to the ion gun I1, Ar When the gas is converted to plasma, the deposition preventing plate MS1 is sputtered, and the gas or water (H ₂ O) remaining on the inner wall of the process chamber 50 of the film formation area FFA (the side facing the substrate S) is added to the It is possible to form a film of a material having a large getter effect.

When performing the adhesion film formation process in step 107, the holding body which holds a some target and an ion gun is rotated, and the target T1 is made to face the film-forming area|region FFA (substrate S side). After the pressure in the process chamber 50 is stabilized, a preset power is supplied to the target T1 to convert the Ar gas into a plasma. Then, an adhesive film is formed on the substrate S.

When the seed film forming step is performed in step 108, the holder holding the plurality of targets and the ion gun is rotated to direct the target T2 toward the film formation area FFA (the substrate S side). After the pressure in the process chamber 50 is stabilized, a preset power is supplied to the target T2 to convert the Ar gas into a plasma. Then, a seed film is formed on the adhesion film.

(Example 1-2)

Except for the 1st process of step 102 or the 3rd process of step 104, it is the same as that of the said Example 1-1.

The 1st process of step 102 or the 3rd process of step 104 is possible also with the target T1. In this case, the holding body holding the plurality of targets and the ion gun is rotated to orient the target T1 toward other than the film formation area FFA (the side that does not face the substrate S). After the pressure in the process chamber 50 is stabilized, a preset power is supplied to the target T1 to convert the Ar gas into a plasma. In addition, a substance having a large getter effect can be formed with respect to the gas or water (H ₂ O) remaining on the inner wall of the process chamber 50 other than the film formation area FFA.

(Example 1-3)

Except for the 1st process of step 102 or the 3rd process of step 104, it is the same as that of the said Example 1-1.

In the first step of step 102 or the third step of step 104 , the method using the ion gun I1 and the method using the target T1 may be used together. Remaining on the inner wall of the process chamber 50 of the film-forming area FFA (the side facing the substrate S) and the inner wall of the process chamber 50 of the film-forming area FFA (the side facing the substrate S) A material having a large getter effect to gas or water (H ₂ O) can be attached.

A control program is stored in the ROM 1002 (also referred to as a "storage section") of the control device in Fig. 2 . The control program is demonstrated using the film-forming apparatus of FIG. 1, the control apparatus of FIG. 2, and the film-forming method of FIG.

The control program includes a first process (step 102) of forming a film of a substance having a large getter effect with respect to gas or water (H ₂ O) remaining in the process chamber in the process chamber 50 (step 102), and a first process (step 102) After the second process (step 103) of evacuating the inside of the process chamber for a predetermined time, and after the second process (step 103), the gas or water (H ₂ O) remaining in the process chamber 50 is A third step (step 104) of forming a material having a large getter effect, a fourth step (step 105) of evacuating the inside of the process chamber 50 for a predetermined time after the third step (step 104), and a fourth step ( After step 105), an adhesion film forming step of forming an adhesion film on the substrate S installed in the process chamber 50 is included, and the time of the first process (step 102) or the third process (step 104) is set to P1 , when the total time of the first process (step 102) and the second process (step 103) or the total time of the third process (step 104) and the fourth process (step 105) is P, the duty ratio D = P1/ The exhaust part V50 and the gas introduction part G1 are controlled so that P may become 34% or more and 66% or less.

Hereinafter, specific operation examples (Example 1-1, Example 1-2, and Example 1-3) of the film forming apparatus of the first embodiment will be described with reference to FIGS. 4 to 8 .

(Example 1-1)

First, as schematically shown in FIG. 4 , in order to form a film on the surface of the substrate S, the substrate S is transported into the process chamber 50 by a transport mechanism (not shown), and the holding unit 60 ) to keep the substrate (S).

Next, as schematically shown in FIG. 4 (corresponding to step 101 in FIG. 3 ), a holder holding a plurality of targets and ion guns is rotated to form the ion gun I1 into the film formation area FFA ( The side opposite to the base material S) is orientated. After the pressure in the process chamber 50 is stabilized from the gas introduction part G1, a voltage is applied to the ion gun I1 to convert the Ar gas into a plasma. And the base material S is etched. Thereby, the surface of the board|substrate S is planarized, roughened, cleaned and/or activated, for example. When the etching process is completed, the voltage application to the ion gun I1 is stopped.

Next, as schematically shown in FIG. 5 (corresponding to step 102 in FIG. 3 ), a holder for holding a plurality of targets and ion guns is rotated so that the ion gun I1 is removed from the film formation area FFA. (the side which does not face the base material S) is made to face. After the pressure in the process chamber 50 is stabilized from the gas introduction part G1, a voltage is applied to the ion gun I1 to convert the Ar gas into a plasma. On the inner wall of the chamber of the process chamber 50 other than the film formation area FFA, a deposition preventing plate MS1 is provided as a getter material supply source MS1. In this state, a voltage is applied to the ion gun I1, Ar When the gas is converted to plasma, the deposition preventing plate MS1 is sputtered, and the gas or water (H ₂ O) remaining on the inner wall of the process chamber 50 of the film formation area FFA (the side facing the substrate S) is added to the It is possible to form a film of a material having a large getter effect.

In addition, the Ar gas supplied to the process chamber 50 is started to be supplied into the process chamber 50 simultaneously with the start of the first process (step 102 in FIG. 3 ) using the gas introduction unit G1 , It is preferable to stop the supply in the process chamber simultaneously with the completion of one process.

In addition, it is preferable to start exhausting the inside of the process chamber 50 before or simultaneously with the start of the first process (step 102 in FIG. 3 ) using the exhaust part V50 to exhaust the inside of the process chamber 50 . do.

In addition, the electric power supplied to the process chamber 50 uses the power supply SP or the electric power supply IG shown in FIG. It is preferable to stop the supply in the process chamber simultaneously with the end of the process.

After forming a film of a material having a large getter effect on the inner wall surface of the process chamber 50 , the supply of Ar gas into the process chamber 50 from the gas introduction part G1 is stopped and the exhaust part V50 is used to , the process chamber 50 is evacuated for a predetermined time (corresponding to step 103 in FIG. 3 ).

Thereby, the 1st getter process (corresponding to step 102 and step 103 in FIG. 3) is complete|finished.

When starting the second getter process (the third process in Fig. 3: step 104 and the fourth process: step 105), as schematically shown in Fig. 5 (corresponding to step 104 in Fig. 3), After the pressure in the process chamber 50 is stabilized from the gas introduction part G1, a voltage is applied to the ion gun I1 to convert the Ar gas into a plasma. On the inner wall of the chamber of the process chamber 50 other than the film formation area FFA, a deposition preventing plate MS1 is provided as a getter material supply source MS1. In this state, a voltage is applied to the ion gun I1, Ar When the gas is converted to plasma, the deposition preventing plate MS1 is sputtered, and the gas or water (H ₂ O) remaining on the inner wall of the process chamber 50 of the film formation area FFA (the side facing the substrate S) is added to the It is possible to form a film of a material having a large getter effect.

In addition, the Ar gas supplied to the process chamber 50 is started to be supplied into the process chamber 50 simultaneously with the start of the third process (step 104 in FIG. 3 ) using the gas introduction unit G1 , 3 It is preferable to stop the supply in the process chamber simultaneously with the completion of the process.

The power to be supplied to the process chamber 50 is started to be supplied into the process chamber simultaneously with the start of the third process using the power supply SP or the power supply IG shown in FIG. It is preferable to stop the supply in the process chamber simultaneously with the end of the process.

After a material having a large getter effect is formed on the inner wall surface of the process chamber 50 , the exhaust part V50 is used in a state in which the supply of Ar gas from the gas introduction part G1 into the process chamber 50 is stopped. Thus, the process chamber 50 is evacuated for a predetermined period of time (corresponding to step 105 in FIG. 3 ).

As a result, the second getter process (corresponding to steps 104 and 105 in FIG. 3 ) ends, and the "getter process" in FIG. 3 ends.

Next, as schematically shown in FIG. 7 (corresponding to step 107 in FIG. 3 ), a holder holding a plurality of targets and ion guns is rotated to form a target T1 in a film formation region (base S). and the opposite side). After the pressure in the process chamber 50 is stabilized, a preset power is supplied to the target T1 to convert the Ar gas into a plasma. And an adhesive film can be formed into a film on the base material S.

Next, as schematically shown in FIG. 8 (corresponding to step 108 in FIG. 3 ), a holder holding a plurality of targets and ion guns is rotated to form a target T2 in a film formation region (base S). and the opposite side). After the pressure in the process chamber 50 is stabilized, a preset power is supplied to the target T2 to convert the Ar gas into a plasma. And a seed film can be formed into a film on the base material S.

(Example 1-2)

The 1st process of step 102 or the 3rd process of step 104 shown in FIG. 3 is also possible with the target T1. In this case, as schematically shown in FIG. 6 (corresponding to step 102 or step 104 in FIG. 3 ), a holder holding a plurality of targets and ion guns is rotated to form the target T1 in the film formation region ( FFA) (the side that does not face the base material S) is oriented. After the pressure in the process chamber 50 is stabilized, a preset power is supplied to the target T1 to convert the Ar gas into a plasma. In addition, a substance having a large getter effect can be formed with respect to the gas or water (H ₂ O) remaining on the inner wall of the process chamber 50 other than the film formation area FFA.

(Example 1-3)

In the first step of step 102 or the third step of step 104 shown in FIG. 3 , the method using the ion gun I1 and the method using the target T1 may be used together. In this case, as shown in FIG. 5 , the ion gun I1 is directed toward other than the film formation area FFA (the side that does not face the substrate S). At this time, the target T1 becomes a position facing the side wall of the inner wall of the process chamber 50 . In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion gun I1 and preset electric power is supplied to the target T1 to convert Ar gas into plasma. On the side wall of the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) and the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) A material having a large getter effect can be attached to the remaining gas or water (H ₂ O).

In addition, the method of using the method using the above-mentioned ion gun I1 and the method of using the target T1 together is possible also in the case of FIG. In this case, as schematically shown in FIG. 6 (corresponding to step 102 or step 104 in FIG. 3 ), a holder holding a plurality of targets and ion guns is rotated to form the target T1 in the film formation region ( FFA) (the side that does not face the base material S) is oriented. In this case, the ion gun I1 is positioned opposite to the sidewall of the inner wall of the process chamber 50 . In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion gun I1 and preset electric power is supplied to the target T1 to convert Ar gas into plasma. On the side wall of the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) and the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) A material having a large getter effect can be attached to the remaining gas or water (H ₂ O).

In addition, the method of using the method of using the ion gun I1 mentioned above and the method of using the target T1 together can also use the case of FIG. 5 and the case of FIG. 6 together.

In this case, as shown in FIG. 5 , the ion gun I1 is directed toward other than the film formation area FFA (the side that does not face the substrate S). In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion gun I1 to convert the Ar gas into a plasma. On the side wall of the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) and the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) A material having a large getter effect is attached to the remaining gas or water (H ₂ O).

At this time, the deposition preventing plate MS1 formed on the upper inner wall of the process chamber 50 is sputtered by the ion gun I1 .

In this state, as shown in FIG. 6 , by rotating the holder holding the plurality of targets and the ion gun, the target T1 is placed other than the film formation area FFA (the side that does not face the substrate S). When directed, the target T1 is in a state facing the upper inner wall of the process chamber 50 . After the pressure in the process chamber 50 is stabilized, a preset power is supplied to the target T1 to convert the Ar gas into a plasma. Accordingly, a material having a large getter effect can also be formed on the deposition preventing plate MS1 sputtered with the ion gun I1 and formed on the upper inner wall of the process chamber 50 .

(Second embodiment)

EMBODIMENT OF THE INVENTION Hereinafter, the film-forming apparatus of 2nd Embodiment of this invention, the control apparatus of the film-forming apparatus, and the film-forming method are demonstrated through the Example 1-1 - 3-3, referring an accompanying drawing.

Fig. 9 is a schematic cross-sectional view of the film forming apparatus according to the embodiment of the present invention cut in a plane parallel to the horizontal plane. The film-forming apparatus 1 of FIG. 9 is provided from the platform 10, and the platform 10 which can be used for exchanging the base material S between the process chamber 50 and other apparatuses other than the film-forming apparatus. It is composed of a load lock chamber 30 that can be used for sending and receiving an untreated substrate S to be used and a substrate S after film formation provided from the process chamber 50 .

Although the basic configuration of the process chamber 50 of the second embodiment is the same as that of the process chamber of the first embodiment, the processing unit FF includes the first processing unit FF1 and the second processing unit FF2 . In this respect, it differs from the basic structure of the process chamber of 1st Embodiment.

A first major feature of the film forming apparatus of FIG. 9 is that the inner wall surface of the process chamber 50 is made of a material (eg, Ti) having a large getter effect with respect to the gas or water (H ₂ O) remaining in the process chamber 50 . membrane) is provided, and functions as a getter material supply source (MS). Since getter material supply source MS consists of 1st getter material supply source MS1 of 1st processing part FF1, and 2nd getter material supply source MS2 of 2nd processing part FF2, it is the getter of 1st Embodiment. It is different from the ash source (MS1).

Here, the XY plane is a plane parallel to the horizontal plane, and the Z axis is an axis parallel to the vertical direction. The film-forming apparatus is comprised as an apparatus which forms a film|membrane on the base material S. The substrate S may be transported and processed while being held by the carrier CR, for example.

The film forming apparatus shown in this embodiment is a plasma processing apparatus in which multiple types of processing are possible in one processing chamber. Since the plasma processing apparatus capable of performing multiple types of processing in one processing chamber does not require different processing chambers for each processing, the exclusive area of the entire apparatus can be reduced, and thus, it is possible to reduce the space of the apparatus. It is advantageous. In this embodiment, switching of processing is realized by rotating a support holding a plurality of targets and ion guns.

The film forming apparatus has a load lock chamber 30 provided with a platform 10 and a heating mechanism in addition to a process chamber 50 for performing a process for forming a film on the substrate S. The platform 10 is used to exchange the substrate S with other devices. The load lock chamber 30 is provided with an exhaust unit V30 capable of evacuating the inside of the load lock chamber 30 , and the process chamber 50 includes an exhaust unit V50 capable of evacuating the interior of the process chamber 50 . are being prepared The exhaust part V30 and the exhaust part V50 are vacuum pumps, such as a dry pump and a turbo molecular pump. A gate valve 20 is installed between the platform 10 and the load lock chamber 30 , and a gate valve 40 is installed between the load lock chamber 30 and the process chamber 50 . The base material S is conveyed in the state hold|maintained by the carrier CR. A conveying device for conveying the carrier CR is introduced into the load lock chamber 30 and the process chamber 50 .

The transport device of the load lock chamber 30 includes a carrier CR provided with an unprocessed substrate S provided from the platform 10 and a carrier provided with a film-formed substrate S provided from the process chamber 50 ( A mechanism for operating CR) is provided. The operation mechanism 72 drives the container which can hold the some base material S along an X-axis, for example. Between the platform 10 and the load lock chamber 30, the base material S is conveyed by a conveyance mechanism (not shown). Between the load lock chamber 30 and the process chamber 50 , the carrier CR is transported by the transport mechanism 74 .

The transfer apparatus of the process chamber 50 includes a transfer mechanism for transferring a carrier CR transferred from the load lock chamber 30 to a holding unit 60 in the process chamber 50 , and a carrier ( ) in the process chamber 50 . CR) holding part 60 is provided. The holding unit 60 has a first chuck CH1 and a second chuck CH2 disposed on opposite sides of each other. The first chuck CH1 and the second chuck CH2 may include, for example, an electrostatic chuck or a mechanical chuck. In the film forming apparatus shown in FIG. 9 , the driving unit moves the holding unit 60 holding the carrier CR along the movement path TP so that the substrate S passes through the film forming region FFA in the process chamber 50 . is provided. The drive part can employ|adopt a linear motor or a ball screw mechanism, for example. The movement path TP is parallel to the to-be-processed surface of the base material S, for example.

The substrate S may be, for example, a resin film fixed to a Si substrate, a rectangular member made of glass or resin, or a support. As a resin-made angular member, a glass-epoxy base material and a build-up board|substrate can be used, for example. As a resin film, a polyimide film can be used, for example. In addition, for the base material S, a laminate of polyimide-based, epoxy-based, phenol-based, and polybenzoxazole-based resins that are interlayer insulating films can be used. Here, the wiring layer may be formed in the base material S which is a laminated body with resin, and the laminated body in which the resin was apply|coated on the base material without wiring formation may be sufficient. However, the shape and material of the base material S are not limited to a specific thing.

In the film forming apparatus shown in Fig. 9, the plasma source is directed outside the film forming area FFA, and a material having a large getter effect (for example, a Ti film) with respect to the gas or water (H ₂ O) remaining on the inner wall of the chamber is formed. It can include the process of attaching, and the process part FF which performs an etching process and the process of forming a film|membrane with respect to the base material S which has passed through the film-forming area|region FFA. Here, the film-forming area|region FFA means the area|region in which an etching process and a film|membrane are formed in the base material S.

The processing unit FF is configured to attach a material (eg, Ti film) having a large getter effect to the gas or water (H ₂ O) remaining on the inner wall other than the film formation area FFA of the process chamber 50 . , it may be configured so that the material does not adhere to the substrate S. Moreover, the processing part FF is a 2nd direction opposite to the said 1st direction along the movement path TP, when the base material S is moving in the 1st direction along the movement path TP, It can be configured so as to form an etching treatment and a film on the substrate S in both when the substrate S is moving. The processing unit FF is disposed so as to simultaneously form an etching process and a film on the two carriers held in the holding unit 60 such that the to-be-processed surfaces of the substrate S face opposite sides to each other, and a first carrier for forming a film on the first carrier. It may include a first processing unit FF1 and a second processing unit FF2 forming a film on the second carrier. The film formation area FFA may be disposed between the first processing unit FF1 and the second processing unit FF2 . In addition, the first processing unit FF1 and the second processing unit FF2 are disposed in the separation unit SP provided in the holding unit 60 so as not to face each other when the substrate S is moved to form an etching process and a film. Accordingly, the space on the side of the first processing unit FF1 and the space on the side of the second processing unit FF2 are separated.

In addition, the processing unit FF is a getter material supply source for attaching a material having a large getter effect (for example, a Ti film) to the gas or water (H ₂ O) remaining on the inner wall of the chamber other than the film formation area FFA. A plasma generating unit generating plasma for attaching the material (eg, Ti film) to the chamber inner wall other than the MS and the film formation region FFA, and plasma for etching treatment and film formation in the film formation region FFA It may include a plasma generating unit for generating a. For example, the processing unit FF may be comprised of a rotating cathode that rotates a support holding a plurality of targets and ion guns, but this is only an example. The processing unit FF may have a different configuration.

The first processing unit has a getter effect with respect to the gas or water (H ₂ O) remaining on the inner wall of the chamber other than the target T1, the target T2, the ion gun I1, and the film formation area FFA. A getter material supply source MS1 for attaching a large material (eg, Ti film) may be provided. For example, the getter material supply source MS1 for attaching a material having a large getter effect (for example, a Ti film) to the inner wall of the chamber other than the film formation area FFA is a Ti deposition preventing plate, a Ti target, or a Ti film is formed. It may be composed of a deposition-preventing plate other than made of Ti.

Similarly, the second processing unit has a getter effect on the target T3 , the target T4 , the ion gun I2 , and the gas or water (H ₂ O) remaining on the inner wall of the chamber other than the film formation area FFA. A getter material supply source MS2 for attaching a large material (eg, Ti film) may be provided. For example, the getter material supply source MS2 for attaching a material having a large getter effect (for example, a Ti film) to the inner wall of the chamber other than the film formation area FFA may be composed of a Ti deposition preventing plate or a Ti target. have.

The holding unit 60 includes a cooling unit that cools the holding unit 60 . When the holding unit 60 is cooled, the substrate S held by the holding unit 60 is cooled, so that, for example, deformation of the substrate S can be suppressed.

Hereinafter, the processing procedure of the base material S in a film-forming apparatus is shown. Hereinafter, in order to distinguish the substrate (S) from each other, it is described as the substrate (S1, S2, S3, S4). First, in the platform 10, the substrate (S1) and the substrate (S2) are installed on the first carrier and the second carrier, respectively. The first carrier provided with the base S1 and the second carrier provided with the base S2 respectively move to the load lock chamber 30 , and the load lock chamber 30 is evacuated to the exhaust unit V30 . When the heat treatment is performed in the load lock chamber 30 , the base material S is heat treated by the lamp heater when the pressure in the load lock chamber 30 becomes equal to or less than a predetermined pressure. Here, in order to simultaneously process the substrate S1 provided in the first carrier and the substrate S2 provided in the second carrier, the substrate S1 provided in the first carrier and the substrate S2 provided in the second carrier It is assumed that the to-be-processed surface has the to-be-processed surface which faced mutually opposite sides, the to-be-processed surface of the base material S1 is the surface which faced the +X direction, and the to-be-processed surface of the base material S2 is the surface which faced the -X direction.

Next, transfer preparation is made from the operation mechanism 72 of the load lock chamber 30 to the process chamber 50 , the first carrier moves to the process chamber 50 , and the holding provided in the process chamber 50 . transferred to the unit 60 . The same operation is performed for the second carrier. Here, the two carriers CR have, on the holding part 60 provided in the process chamber 50 , the to-be-processed surface of the base material S provided in each carrier CR facing the opposite side to each other. and the to-be-processed surface of the base material S1 is hold|maintained so that the surface which faces the +X direction, and the to-be-processed surface of the base material S2 faces the surface which faces the -X direction. The first carrier and the second carrier move along the movement path TP while being held by the holding unit 60 so that the surfaces to be processed face opposite sides to the holding unit 60 of the process chamber 50 , By passing through the film formation area FFA in the process chamber 50 , the two carriers are simultaneously etched and a film is formed.

When the first carrier and the second carrier are disposed in the process room 50 , a vent operation of the load lock room 30 , the substrate S3 from the platform 10 to the third carrier and the fourth carrier and the installation of the substrate S4, the movement of the third carrier and the fourth carrier on which the substrate S3 and the substrate S4 are installed to the load lock chamber 30, and the vacuum of the load lock chamber 30 in the exhaust unit V30. Exhaust is performed sequentially. When the heat treatment is performed in the load lock chamber 30 , the base material S is heat treated by the lamp heater when the pressure in the load lock chamber 30 becomes equal to or less than a predetermined pressure.

After the etching treatment and film formation of the first carrier and the second carrier are performed in the process chamber 50 , transport preparation is performed in the load lock chamber 30 by the operation mechanism 72 . After the transfer preparation operation is completed, the first carrier is transferred from the holding unit 60 provided in the process chamber 50 to the transfer mechanism 74 , and the first carrier is moved to the load lock chamber 30 . After the first carrier on which etching and film formation has been performed in the process chamber 50 is discharged to the load lock chamber 30 , the operation mechanism 72 of the load lock chamber 30 removes the third carrier from the process chamber 50 . ) to prepare for transport. After that, the third carrier is moved to the process chamber 50 . After moving the third carrier to the process chamber 50 , the second carrier is moved to the load lock chamber 30 by the same operation as the first carrier. After moving the second carrier from the process chamber 50 to the load lock chamber 30 , the fourth carrier is moved to the process chamber 50 by the same operation as the second carrier. After moving the third carrier and the fourth carrier to the process chamber 50 , the gate valve 40 is closed. In the load lock chamber 30 after closing the gate valve 40, the load lock chamber 30 is vented, the first carrier and the second carrier are respectively moved to the platform 10, and the substrate S1 and the substrate ( S2) is separated from each carrier CR. At the same time, in the process chamber 50 , the third carrier and the fourth carrier are transferred to the holding unit 60 , and etching treatment and film formation are performed.

When the third carrier and the fourth carrier are disposed in the process chamber 50 , the vent operation of the load lock chamber 30 , the substrate S5 from the platform 10 to the first carrier and the second carrier, and the substrate ( The installation of S6, the movement of the first carrier and the second carrier on which the substrate S5 and the substrate S6 are provided to the load lock chamber 30, and the evacuation of the load lock chamber 30 from the exhaust unit V30 are sequentially performed. is done When the heat treatment is performed in the load lock chamber 30 , the base material S is heat treated by the lamp heater when the pressure in the load lock chamber 30 becomes equal to or less than a predetermined pressure.

After the etching treatment and film formation of the third carrier and the fourth carrier are performed in the process chamber 50 , transport preparation is performed in the load lock chamber 30 by the operation mechanism 72 . After the transfer preparation operation is completed, the third carrier is transferred from the holding unit 60 provided in the process chamber 50 to the transfer mechanism 74 , and the third carrier is moved to the load lock chamber 30 . The same operation is performed for the fourth carrier. After the carrier on which etching and film formation has been performed in the process chamber 50 is discharged to the load lock chamber 30 , the operation mechanism 72 of the load lock chamber 30 moves the first carrier into the process chamber 50 . Prepare for moving conveyance. After that, the first carrier is moved to the process chamber 50 . The same operation is performed for the second carrier. After closing the gate valve 40 , in the load lock chamber 30 , the load lock chamber 30 is vented, the third carrier and the fourth carrier are respectively moved to the platform 10 , and the substrate S3 and the substrate (S4) is separated from each carrier. At this time, in the process chamber 50 at the same time, the first carrier and the second carrier are transferred to the holding unit 60 , and the substrate S5 mounted on the first carrier and the substrate S6 mounted on the second carrier are etched. treatment and film formation. Continuous processing is performed by repeating the above operation.

Fig. 10 is a block diagram showing a schematic configuration of a control system for a load lock chamber and a process chamber in the film forming apparatus 1 according to the second embodiment of the present invention. The control system of Example 1-1 of FIG. 11 differs from the control system of FIG. 2 in that the control device 1000 includes a control unit as control means for controlling the load lock chamber 10 of the film forming device 1 . point.

In FIG. 10 , the control device 1000 is a control unit serving as control means for controlling the load lock chamber 10 and the process chamber 50 of the film forming apparatus 1 . The control device 1000 includes a CPU 1001 that executes processing operations such as various arithmetic, control, and discrimination, and processes to be described later in FIGS. 11 to 13 and 15 to 16 that are executed by the CPU 1001 . It has a ROM 1002 (also referred to as a "storage section") that stores a control program or the like. Further, the control device 1000 includes a RAM 1003 for temporarily storing data, input data, and the like during a processing operation of the CPU 1001 , a nonvolatile memory 1004 , and the like. Further, in the control device 1000 , an input operation unit 1005 including a keyboard or various switches for inputting predetermined commands or data, etc., and a display unit for performing various displays including input and setting states of the film forming apparatus 1 , etc. (1006) is connected. Further, in the control device 1000 , a power supply 1018 of the load lock chamber 30 , a gas introduction meter 1019 , a substrate holder driving mechanism 1020 , a pressure measuring device 1021 , and a sputtering cathode of the process chamber 50 . Power supply (SP) 1022 for ion guns, power supply (IG) 1023 for ion guns, gas introduction meter 1024, substrate holder drive mechanism 1025, pressure gauge 1026, holder transfer mechanism 1027, cathode The rotation mechanism 1028, the exhaust unit (V50: 1030), and the like are connected via drive circuits 1007 to 1017 and 1029, respectively.

A control program is stored in the ROM 1002 (also referred to as a "storage section").

The control program includes, in the process chamber 50 , a first process (step 102 in FIG. 2 ) of forming a film of a substance having a large getter effect with respect to gas or water (H ₂ O) remaining in the process chamber (step 102 in FIG. 2 ); After step 102 of FIG. 2 ), the second process (step 103 of FIG. 2 ) of evacuating the inside of the process chamber for a predetermined time, and after the second process (step 103 of FIG. 2 ), the inside of the process chamber 50 and the inside of the process chamber A third process (step 104 in FIG. 2 ) of forming a film of a substance having a large getter effect on the remaining gas or water (H ₂ O), and a predetermined time after the third process (step 104 in FIG. 2 ), the process chamber 50 ) After the fourth step (step 105 of FIG. 2 ) and the fourth step (step 105 of FIG. 2 ) of evacuating the inside, forming an adhesive film for forming an adhesive film on the substrate S installed in the process chamber 50 . Including the process (step 107 in FIG. 2 ), the time of the first process (step 102 in FIG. 2 ) or the third process (step 104 in FIG. 2 ) is P1 , the first process (step 102 in FIG. 2 ) and the second process When the total time of the second process (step 103 in Fig. 2) or the total time of the third process (step 104 in Fig. 2) and the fourth process (step 105 in Fig. 2) is P, the duty ratio D = P1/P The exhaust part V50 and the gas introduction part G1 are controlled so that , is 34% or more and 66% or less.

(Example 1-1)

11 : is a figure which shows the flow of the film-forming method of Example 1-1, Example 1-2, and Example 1-3 in the case where the film-forming apparatus of 2nd Embodiment is used. Hereinafter, each process is demonstrated with reference to this flowchart. The basic configuration of the getter step 33 is the same as the film forming method in the case where the film forming apparatus of the first embodiment of FIG. 2 is used. That is, the getter process 33 of FIG. 11 consists of steps 102 - 105 of the film-forming method of FIG.

The difference between the film forming method of Example 1-1 of FIG. 11 from the film forming method of FIG. 2 is that carrier transfer material: Step 31, target cleaning process for adhesion film: Step 34, target cleaning process for seed film: Step 36, carrier discharge process : Step 38 is added.

In step 31 , the carrier CR is transferred to the holding unit 60 in the process chamber 50 .

In step 32, an etching process is performed. A plurality of targets and a holder holding the ion gun are rotated to direct the ion guns I1 and I2 toward the film formation area FFA (the side facing the substrate S). After the pressure in the process chamber 50 is stabilized from the gas introduction part G1, a voltage is applied to the ion guns I1 and I2 to convert the Ar gas into a plasma. And in order to perform an etching process, conveyance of the carrier is started toward the film-forming area|region FFA, and the base material S is etched by passing through the film-forming area|region FFA the specified number of times at a preset conveyance speed. When the etching process is completed, voltage application to the ion guns I1 and I2 is stopped. In this embodiment, although Ar gas was used as the introduction gas, it is not limited to this, Reactive gas, such as nitrogen, oxygen, hydrogen, can also be used.

In step 33, a getter process is performed. The plurality of targets and the holder holding the ion gun are rotated so that the ion guns I1 and I2 are directed other than the film formation area FFA (the side that does not face the substrate S). A getter effect is applied to the gas or water (H ₂ O) remaining on the inner wall of the chamber of the process chamber 50 as a getter material supply source MS on the chamber inner wall of the process chamber 50 other than the film formation area FFA. A deposition-preventing plate made of a large material (for example, Ti film) is provided, and in this state, when a voltage is applied to the ion guns I1 and I2 to generate a plasma of Ar gas, the deposition-preventing plate is sputtered, and the deposition area (FFA) is formed. The material (eg, Ti film) may be attached to the inner wall of the chamber other than that of the chamber and to the magnetic poles of the ion guns I1 and I2. This "getter process" repeats the getter process (step 102 and step 103 in FIG. 3 or step 104 and step 105 in FIG. 3) of sputtering of the deposition preventing plate MS and exhaust after sputtering as a series of operations twice or more Therefore, it is preferable to continue until the pressure in the process chamber 50 or the partial pressure of water (H ₂ O) becomes a predetermined pressure or less. Here, when using the reactive gas in the getter process of step 33, introduction of the reactive gas is stopped before the start of step 34.

In step 34, the cleaning process of the target used for adhesion film formation is performed. Rotate the holder holding the plurality of targets and the ion gun so that the targets T1 and T3 (for example, both Ti targets) are directed to other than the film formation area FFA (the side that does not face the substrate S) After the pressure in the process chamber 50 is stabilized, electric power is applied to the targets T1 and T3 to convert the Ar gas into a plasma, and the targets T1 and T3 are cleaned for a predetermined time with a preset power.

In step 35, an adhesion film formation process is performed. The holding body holding the plurality of targets and the ion gun is rotated to direct the targets T1 and T3 (for example, both Ti targets) toward the film formation area FFA (the side opposite to the substrate S). After the pressure in the process chamber 50 is stabilized, a preset electric power is supplied to the targets T1 and T3 (for example, both Ti targets) to convert the Ar gas into a plasma. Then, in order to form an adhesion film (for example, a Ti film) on the substrate S, transport of the carrier is started toward the film formation area FFA, and the number of times specified at a preset conveying speed, the film formation area FFA By passing through, an adhesion film (eg, Ti film) is formed on the substrate S.

In step 36, a cleaning process of a target used in forming the seed film is performed. Rotate the holder holding the plurality of targets and the ion gun, so that the targets T2 and T4 (for example, both Cu targets) are directed other than the film formation area FFA (the side that does not face the substrate S) Then, after the pressure in the process chamber 50 is stabilized, power is applied to the targets T2 and T4 (for example, both Cu targets) to convert the Ar gas into a plasma, and the target ( T2, T4) (for example, both Cu targets) are cleaned.

In step 37, a seed film forming step is performed. The holding body holding the plurality of targets and the ion gun is rotated to direct the targets T2 and T4 (for example, both Cu targets) toward the film formation area FFA (the side facing the substrate S). After the pressure in the process chamber 50 is stabilized, a preset power is supplied to the targets T2 and T4 (for example, both Cu targets) to convert the Ar gas into a plasma. Then, in order to form a seed film (eg, Cu film) on the adhesion film (eg, Ti film), transport of the carrier toward the film formation area FFA is started, and a preset transport speed is designated A seed film (for example, Cu film) is formed on the adhesion film (for example, Ti film) formed into a film on the base material S by passing through the film-forming area|region FFA into a film several times.

In step 38 , the carrier is removed from the holding unit 60 in the process chamber 50 , and the carrier CR is discharged from the process chamber 50 .

According to this embodiment 1-1, by providing the getter material supply source MS separately from the cathode for film formation, installation of the target as the getter material supply source to the rotating cathode becomes unnecessary, and it is not limited to the sputter film type, A getter process may be performed. In addition to the range in which a material having a large getter effect (eg, Ti film) is adhered to the inner wall of the chamber by ion beam sputtering, the deposition preventing plate MS (eg, Ti) serving as the getter material supply MS (eg, Ti) contains ions Activated by beam irradiation, it acts as an adsorption surface for gas molecules. Therefore, the area of the adsorption surface to which gas molecules adsorb|sucks becomes large, and a high getter effect can be acquired. Further, in the getter process, by performing the getter process a plurality of times, the surface on which gas molecules are adsorbed can be activated for each getter process, so that the adsorption effect is promoted, and when the supply of Ar gas is stopped, water ( Since the H ₂ O) gas is also rapidly exhausted, the cleaning in the process chamber 50 is promoted.

In addition, according to the present embodiment 1-1, when the pressure in the process chamber 50 or the partial pressure of water (H ₂ O) in the process chamber 50 is constantly measured with a quadrupole mass spectrometer RGA, when the pressure falls below a predetermined pressure Since the getter process can be continued until the time of forming the adhesion film, the atmosphere in the process chamber 50 can be stabilized.

(Example 1-2)

Next, the film-forming method of Example 1-2 which is a modification of Example 1-1 is demonstrated using the flowchart of the film-forming method of Example 1-1 of FIG. 11. FIG. The difference in the film-forming method of Example 1-2 from the film-forming method of Example 1-1 is step 33. The basic configuration of the getter process 33 is the same as that of the film forming method of FIG. 2 . That is, the getter process 33 of FIG. 11 consists of steps 102 - 105 of the film-forming method of FIG. The getter process consists of steps 102 and 103 or steps 104 and 105 of the film forming method of FIG. 2 .

Hereinafter, with reference to the flowchart of FIG. 11 and FIG. 6, step 33 is demonstrated. Since each process of step 31, step 32, and step 34-38 is the same as each process of Example 1-1, description is abbreviate|omitted.

Step 33 of Example 1-2: In the getter process, as shown in FIG. 6 , a holder holding a plurality of targets and an ion gun is rotated to place the targets T1 and T3 other than the film formation area FFA (substrate S ) and the side not facing). After the pressure in the process chamber 50 is stabilized, preset power is supplied to the targets T1 and T3 to convert the Ar gas into a plasma. In addition, a substance having a large getter effect can be formed with respect to the gas or water (H ₂ O) remaining on the inner wall of the process chamber 50 other than the film formation area FFA.

(Example 1-3)

Next, the film-forming method of Example 1-3 which is a modification of Example 1-1 is demonstrated using the flowchart of the film-forming method of Example 1-1 in FIG. The difference between the film-forming method of Example 1-3 and the film-forming method of Example 1-1 is step 33. The basic configuration of the getter process 33 is the same as that of the film forming method of FIG. 2 . That is, the getter process 33 of FIG. 11 consists of steps 102 - 105 of the film-forming method of FIG. The getter process consists of steps 102 and 103 or steps 104 and 105 of the film forming method of FIG. 2 .

Hereinafter, with reference to the flowchart of FIG. 11 and FIG. 5, step 33 is demonstrated. Since each process of step 31, step 32, and step 34-38 is the same as each process of Example 1-1, description is abbreviate|omitted.

Step 33 of Example 1-3: In the getter process, the method using the above-mentioned ion guns I1 and I2 and the method of using the targets T1 and T3 are used together and performed. In this case, as shown in FIG. 5 , the ion guns I1 and I2 are directed toward other than the film formation area FFA (the side that does not face the substrate S). At this time, the targets T1 and T3 are positioned to face the sidewall of the inner wall of the process chamber 50 . In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion guns I1 and I2 , and preset power is supplied to the targets T1 and T3 to convert Ar gas into a plasma. On the side wall of the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) and the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) A material having a large getter effect can be attached to the remaining gas or water (H ₂ O).

In addition, the method of using the method of using the above-mentioned ion guns I1 and I2 and the method of using the target T1, T3 together is possible also in the case of FIG. In this case, as shown in FIG. 6 , a holder holding a plurality of targets and an ion gun is rotated to place the targets T1 and T3 other than the film formation area FFA (the side that does not face the substrate S). to face In this case, the ion guns I1 and I2 are positioned to face the sidewall of the inner wall of the process chamber 50 . In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion guns I1 and I2 , and preset power is supplied to the targets T1 and T3 to convert Ar gas into a plasma. On the side wall of the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) and the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) A material having a large getter effect can be attached to the remaining gas or water (H ₂ O).

In addition, the method of using the above-mentioned ion gun (I1, I2) and the method of using the target (T1, T3) together is also possible by using the case of FIG. 5 and the case of FIG. 6 together.

In this case, as shown in FIG. 5 , the ion guns I1 and I2 are directed toward other than the film formation area FFA (the side that does not face the substrate S). In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion guns I1 and I2 to convert the Ar gas into a plasma. On the side wall of the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) and the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) A material having a large getter effect is attached to the remaining gas or water (H ₂ O).

At this time, the deposition preventing plates MS1 and MS2 formed on the upper inner wall of the process chamber 50 are sputtered by the ion guns I1 and I2 .

In this state, as shown in FIG. 6 , a holder holding a plurality of targets and ion guns is rotated to place the targets T1 and T3 other than the film formation area FFA (the side that does not face the substrate S). ), the targets T1 and T3 face the upper inner wall of the process chamber 50 . After the pressure in the process chamber 50 is stabilized, preset power is supplied to the targets T1 and T3 to convert the Ar gas into a plasma. Accordingly, a material having a large getter effect can be formed even on the deposition-preventing plates MS1 and MS2 formed on the upper inner wall of the process chamber 50 sputtered by the ion guns I1 and I2.

(Example 2-1)

In Example 1-1 of FIG. 11 mentioned above, although the example which performs a getter process between an etching process and an adhesion film formation process was demonstrated, you may perform a getter process before an etching process. An example in which the getter process is performed before the etching process will be described below as Example 2-1. 12 is a flowchart showing the processing procedure of the film-forming method of Example 2-1, Example 2-2, and Example 2-3. The basic configuration of the getter process and the getter process 42 is the same as that of the film forming method of FIG. 2 . That is, the getter process 42 of FIG. 6 is comprised of steps 102 - 105 of the film-forming method of FIG. The getter process consists of steps 102 and 103 or steps 104 and 105 of the film forming method of FIG. 2 .

In step 41 , the carrier CR is transferred to the holding unit 60 in the process chamber 50 .

In step 42, a getter process is performed. The holder holding the plurality of targets and the ion gun is rotated to direct the ion guns I1 and I2 outside the film formation area FFA. On the inner wall of the chamber of the process chamber 50 other than the film formation area FFA, as a getter material supply source MS, an anti-deposition plate (for example, made of Ti) is provided, and in this state, the ion guns I1 and I2 are used. When the Ar gas is plasmaized by applying a voltage to the For example, Ti film) can be attached. This "getter process" is a getter process in which sputtering of the Ti deposition-preventing plate and exhaust after sputtering are a series of operations, and this operation is repeated _two or more times. It is desirable to continue until the pressure of

In step 43, an etching process is performed. A holder holding the plurality of targets and the ion gun is rotated to direct the ion guns I1 and I2 toward the film formation area FFA. After the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion guns I1 and I2 to convert the Ar gas into a plasma. And in order to perform an etching process, conveyance of the carrier CR is started toward the film-forming area|region FFA, and it passes through the film-forming area|region FFA (the side opposite to the base material S) the specified number of times at a preset conveyance speed. The base material S is etched by doing so. When the etching process is completed, voltage application to the ion guns I1 and I2 is stopped. In the present embodiment, although Ar gas is used as the gas introduced from the gas introduction unit G1, it is not limited to this, and a reactive gas such as nitrogen, oxygen or hydrogen may be used.

In step 44, the cleaning process of the target used for adhesion film formation is performed. Rotate the holder holding the plurality of targets and the ion gun so that the targets T1 and T3 (for example, both Ti targets) are directed to other than the film formation area FFA (the side that does not face the substrate S) Then, after the pressure in the process chamber 50 is stabilized, power is applied to the targets T1 and T3 (for example, both Ti targets) to convert the Ar gas into a plasma, and a predetermined time target T1 with a preset power. , T3) (for example, all Ti targets) are cleaned.

In step 45, an adhesion film forming process is performed. The holding body holding the plurality of targets and the ion gun is rotated to direct the targets T1 and T3 (for example, both Ti targets) toward the film formation area FFA (the side opposite to the substrate S). After the pressure in the process chamber 50 is stabilized, a preset power is supplied to the targets T1 and T3 (for example, both of the Ti targets) to plasma the Ar gas. Then, in order to form an adhesion film (for example, a Ti film), conveyance of the carrier CR is started toward the film formation area FFA, and passes through the film formation area FFA a specified number of times at a preset conveying speed. , an adhesion film (eg, Ti film) is formed on the substrate S.

In step 46, a cleaning process of the target used in forming the seed film is performed. By rotating the holder holding the plurality of targets and the ion gun, the targets T2 and T4 (for example, both Cu targets) are directed outside the film formation area FFA, and the pressure in the process chamber 50 is stabilized. After this, power is applied to the targets T2 and T4 (for example, all Cu targets) to plasma the Ar gas, and the predetermined time targets T2 and T4 (for example, all Cu targets) with a preset power. ) is cleaned.

In step 47, a seed film forming step is performed. The holding body holding the plurality of targets and the ion gun is rotated to direct the targets T2 and T4 (for example, both Cu targets) toward the film formation area FFA (the side facing the substrate S). After the pressure in the process chamber 50 is stabilized, a preset power is supplied to the targets T2 and T4 (for example, both Cu targets) to convert the Ar gas into a plasma. Then, in order to form a seed film (for example, a Cu film), conveyance of the carrier CR is started toward the film formation area FFA, and passes through the film formation area FFA a specified number of times at a preset conveying speed. , a seed film (eg, Cu film) is formed on the adhesion film formed on the substrate S.

In step 48 , the carrier is removed from the holding unit 60 in the process chamber 50 , and the carrier CR is discharged from the process chamber 50 .

According to the present embodiment 2-1, a material having a large getter effect (for example, a Ti film) can be attached to the inner wall of the chamber other than the film formation area FFA before the etching process, and the getter effect on the stimulation of the ion gun in the getter process Since a material with a large thickness (for example, a Ti film) is coated, an active adsorption surface having a getter action is exposed in the film formation region FFA in the middle of the etching process, so water released from the substrate S during etching (H ₂ O) gas can be adsorbed in real time.

(Example 2-2)

Next, using the flowchart of the film-forming method of Example 2-1 of FIG. 12, the film-forming method of Example 2-2 which is a modification of Example 2-1 is demonstrated. The difference in the film-forming method of Example 2-2 from the film-forming method of Example 2-1 is step 42. The basic configuration of the getter step 42 is the same as in the film forming method of FIG. 2 . That is, the getter process 33 of FIG. 12 is comprised of steps 102 - 105 of the film-forming method of FIG. The getter process consists of steps 102 and 103 or steps 104 and 105 of the film forming method of FIG. 2 .

Hereinafter, with reference to the flowchart of FIG. 12 and FIG. 6, step 42 is demonstrated. Since each process of Step 41 and Step 43 to Step 48 is the same as each process of Example 2-1, description is omitted.

Step 42 of Example 2-2: In the getter process, as shown in FIG. 6 , a holder holding a plurality of targets and an ion gun is rotated to place the targets T1 and T3 other than the film formation area FFA (base material S ) and the side not facing). After the pressure in the process chamber 50 is stabilized, preset power is supplied to the targets T1 and T3 to convert the Ar gas into a plasma. In addition, a substance having a large getter effect can be formed with respect to the gas or water (H ₂ O) remaining on the inner wall of the process chamber 50 other than the film formation area FFA.

(Example 2-3)

Next, the film-forming method of Example 2-3 which is a modification of Example 2-1 is demonstrated using the flowchart of the film-forming method of Example 2-1 of FIG. 12. FIG. The difference in the film-forming method of Example 2-3 from the film-forming method of Example 2-1 is step 42. The basic configuration of the getter step 42 is the same as in the film forming method of FIG. 2 . That is, the getter process 42 of FIG. 12 is comprised of steps 102 - 105 of the film-forming method of FIG. The getter process consists of steps 102 and 103 or steps 104 and 105 of the film forming method of FIG. 2 .

Hereinafter, with reference to the flowchart of FIG. 12 and FIG. 5, step 42 is demonstrated. Since each process of Step 41 and Step 43 to Step 48 is the same as each process of Example 2-1, description is omitted.

Step 33 of Example 2-3: In the getter process, the method using the above-mentioned ion guns I1 and I2 and the method of using the targets T1 and T3 are used together and performed. In this case, as shown in FIG. 5 , the ion guns I1 and I2 are directed toward other than the film formation area FFA (the side that does not face the substrate S). At this time, the targets T1 and T3 are positioned to face the sidewall of the inner wall of the process chamber 50 . In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion guns I1 and I2 , and preset power is supplied to the targets T1 and T3 to convert Ar gas into a plasma. On the side wall of the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) and the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) A material having a large getter effect can be attached to the remaining gas or water (H ₂ O).

In addition, the method of using the method of using the above-mentioned ion guns I1 and I2 and the method of using the target T1, T3 together is possible also in the case of FIG. In this case, as shown in FIG. 6 , a holder holding a plurality of targets and an ion gun is rotated to place the targets T1 and T3 other than the film formation area FFA (the side that does not face the substrate S). to face In this case, the ion guns I1 and I2 are positioned to face the sidewall of the inner wall of the process chamber 50 . In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion guns I1 and I2 , and preset power is supplied to the targets T1 and T3 to convert Ar gas into a plasma. On the side wall of the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) and the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) A material having a large getter effect can be attached to the remaining gas or water (H ₂ O).

In addition, the method of using the above-mentioned ion gun (I1, I2) and the method of using the target (T1, T3) together is also possible by using the case of FIG. 5 and the case of FIG. 6 together.

In this case, as shown in FIG. 5 , the ion guns I1 and I2 are directed toward other than the film formation area FFA (the side that does not face the substrate S). In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion guns I1 and I2 to convert the Ar gas into a plasma. On the side wall of the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) and the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) A material having a large getter effect is attached to the remaining gas or water (H ₂ O).

At this time, the deposition preventing plates MS1 and MS2 formed on the upper inner wall of the process chamber 50 are sputtered by the ion guns I1 and I2 .

In this state, as shown in FIG. 6 , a holder holding a plurality of targets and ion guns is rotated to place the targets T1 and T3 other than the film formation area FFA (the side that does not face the substrate S). ), the targets T1 and T3 face the upper inner wall of the process chamber 50 . After the pressure in the process chamber 50 is stabilized, preset power is supplied to the targets T1 and T3 to convert the Ar gas into a plasma. Accordingly, a material having a large getter effect can be formed even on the deposition-preventing plates MS1 and MS2 formed on the upper inner wall of the process chamber 50 sputtered by the ion guns I1 and I2.

(Example 3-1)

In Example 1-1 described above, the example in which the getter process is performed between the etching process and the adhesion film formation process and the example in which the getter process is performed before the etching process in Example 2-1 have been described, respectively, but the getter process is the etching process You may carry out both before and between the etching process and the adhesion film formation process. An example in which the getter process is performed both before the etching process and between the etching process and the adhesion film formation process will be described below as Example 3-1. 13 is a flowchart of the film forming method of Example 3-1, Example 3-2, and Example 3-3. The basic configuration of the getter step 52 and the getter step 54 is the same as that of the film forming method of FIG. 2 . That is, the getter process 42 of FIG. 6 is comprised of steps 102 - 105 of the film-forming method of FIG. The getter process consists of steps 102 and 103 or steps 104 and 105 of the film forming method of FIG. 2 .

In step 51 , the carrier CR is transferred to the holding unit 60 in the process chamber 50 .

In step 52, a getter process is performed. The holder holding the plurality of targets and the ion gun is rotated to direct the ion guns I1 and I2 outside the film formation area FFA. On the inner wall of the chamber of the process chamber 50 other than the film formation area FFA, as a getter material supply source MS, an anti-deposition plate (for example, made of Ti) is provided, and in this state, the ion guns I1 and I2 are used. When Ar gas is plasmaized by applying a voltage to the can be attached. This "getter process" is a getter process in which sputtering of the Ti deposition-preventing plate and exhaust after sputtering are a series of operations, and this operation is repeated _two or more times. It is desirable to continue until the pressure of

In step 53, an etching process is performed. A holder holding the plurality of targets and the ion gun is rotated to direct the ion guns I1 and I2 toward the film formation area FFA. After the pressure in the process chamber 50 is stabilized from the gas introduction part G1, a voltage is applied to the ion guns I1 and I2 to convert the Ar gas into a plasma. And in order to perform an etching process, the conveyance of the carrier CR is started toward the film-forming area|region FFA, and the base material S is etched by passing through the film-forming area|region FFA a predetermined number of times at a preset conveyance speed. When the etching process is completed, the voltage application to the ion gun is stopped. In this embodiment, although Ar gas was used as the introduction gas, it is not limited to this, Reactive gas, such as nitrogen, oxygen, and hydrogen, can also be used.

In step 54, a getter process is performed. The holder holding the plurality of targets and the ion gun is rotated to direct the ion guns I1 and I2 outside the film formation area FFA. On the inner wall of the chamber of the process chamber 50 other than the film formation area FFA, as a getter material supply source MS, an anti-deposition plate (for example, made of Ti) is provided, and in this state, the ion guns I1 and I2 are used. When Ar gas is plasmaized by applying voltage to the It is possible to attach a material with a large thickness (for example, a Ti film). This "getter process" is a getter process in which sputtering of the Ti deposition-preventing plate and exhaust after sputtering are a series of operations, and this operation is repeated _two or more times. It is desirable to continue until the pressure of

In step 55, the cleaning process of the target used for adhesion film formation is performed. Rotating the holder holding the plurality of targets and the ion gun, direct the targets T1 and T3 (eg, Ti target) to other than the film formation area FFA (the side that does not face the substrate S) , after the pressure in the process chamber is stabilized, power is applied to the targets T1 and T3 (for example, a Ti target) to plasma the Ar gas, and a predetermined time target (T1, T3) (eg, a Ti target) with a preset power For example, the Ti target) is cleaned.

In step 56, an adhesion film forming process is performed. The holding body holding the plurality of targets and the ion gun is rotated to direct the targets T1 and T3 (for example, all Ti targets) toward the film formation area FFA. After the pressure in the process chamber 50 is stabilized, a preset electric power is supplied to the targets T1 and T3 (for example, both Ti targets) to convert the Ar gas into a plasma. Then, in order to form an adhesion film (for example, a Ti film), conveyance of the carrier CR is started toward the film formation area FFA, and passes through the film formation area FFA a specified number of times at a preset conveying speed. , an adhesion film (eg, Ti film) is formed on the substrate S.

In step 57, a cleaning process of the target used in forming the seed film is performed. Rotate the holder holding the plurality of targets and the ion gun, so that the targets T2 and T4 (for example, both Cu targets) are directed other than the film formation area FFA (the side that does not face the substrate S) After the pressure in the process chamber 50 is stabilized, power is applied to the Cu target to convert Ar gas into a plasma, and a predetermined time target (T2, T4) (for example, all Cu targets) with a preset power. perform cleaning.

In step 58, a seed film forming step is performed. The holding body holding the plurality of targets and the ion gun is rotated to direct the targets T2 and T4 (for example, both Cu targets) toward the film formation area FFA (the side facing the substrate S). After the pressure in the process chamber 50 is stabilized, a preset power is supplied to the targets T2 and T4 (for example, both Cu targets) to convert the Ar gas into a plasma. Then, in order to form a seed film (for example, a Cu film), conveyance of the carrier CR is started toward the film formation area FFA, and passes through the film formation area FFA a specified number of times at a preset conveying speed. , a seed film (eg, Cu film) is formed on the adhesion film formed on the substrate S.

In step 59 , the carrier CR is separated from the holding unit 60 in the process chamber 50 , and the carrier CR is discharged from the process chamber 50 .

According to the present embodiment 3-1, both the effects of the above-described embodiment 1-1 and 2-1 can be exhibited. Specifically, both the effect of the real-time getter effect during the etching process and the purifying of the atmosphere in the process chamber before the adhesion film formation process can be expected.

(Example 3-2)

Next, the film-forming method of Example 3-2 which is a modification of Example 3-1 is demonstrated using the flowchart of the film-forming method of Example 3-1 of FIG. 13. FIG. The difference in the film-forming method of Example 3-2 from the film-forming method of Example 3-1 is Step 52 and Step 54. The basic configuration of the getter process 52 and the getter process 54 is the same as that of the film forming method of FIG. 2 . That is, the getter process 52 and the getter process 54 of FIG. 13 are comprised by step 102 - step 105 of the film-forming method of FIG. The getter process consists of steps 102 and 103 or steps 104 and 105 of the film forming method of FIG. 2 .

Hereinafter, with reference to the flowchart of FIG. 13 and FIG. 6, step 52 and step 54 are demonstrated. Since each process of step 51, step 53, and step 55 to step 58 is the same as each process of Example 3-1, description is abbreviate|omitted.

Step 52 and Step 54 of Example 3-2: In the getter process, as shown in FIG. 6 , a holder holding a plurality of targets and ion guns is rotated to place the targets T1 and T3 outside the film formation area FFA ( The side that does not face the substrate S) is orientated. After the pressure in the process chamber 50 is stabilized, preset power is supplied to the targets T1 and T3 to convert the Ar gas into a plasma. In addition, a substance having a large getter effect can be formed with respect to the gas or water (H ₂ O) remaining on the inner wall of the process chamber 50 other than the film formation area FFA.

(Example 3-3)

Next, the film-forming method of Example 3-3 which is a modification of Example 3-1 is demonstrated using the flowchart of the film-forming method of Example 3-1 of FIG. 13. FIG. The difference between the film-forming method of Example 3-3 and the film-forming method of Example 3-1 is steps 52 and 54. The basic configuration of the getter process 52 and the getter process 54 is the same as that of the film forming method of FIG. 2 . That is, the getter process 52 and the getter process 54 of FIG. 13 are comprised by step 102 - step 105 of the film-forming method of FIG. The getter process consists of steps 102 and 103 or steps 104 and 105 of the film forming method of FIG. 2 .

Hereinafter, with reference to the flowchart of FIG. 13 and FIG. 5, step 52 and step 54 are demonstrated. Since each process of step 51, step 53, and step 55 to step 58 is the same as each process of Example 3-1, description is abbreviate|omitted.

Step 52 and Step 54 of Example 3-3: In the getter process, the method using the ion guns I1 and I2 and the method using the targets T1 and T3 mentioned above are used together and performed. In this case, as shown in FIG. 5 , the ion guns I1 and I2 are directed toward other than the film formation area FFA (the side that does not face the substrate S). At this time, the targets T1 and T3 are positioned to face the sidewall of the inner wall of the process chamber 50 . In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion guns I1 and I2 , and preset power is supplied to the targets T1 and T3 to convert Ar gas into a plasma. On the side wall of the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) and the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) A material having a large getter effect can be attached to the remaining gas or water (H ₂ O).

In addition, the method of using the method of using the above-mentioned ion guns I1 and I2 and the method of using the target T1, T3 together is possible also in the case of FIG. In this case, as shown in FIG. 6 , a holder holding a plurality of targets and an ion gun is rotated to place the targets T1 and T3 other than the film formation area FFA (the side that does not face the substrate S). to face In this case, the ion guns I1 and I2 are positioned to face the sidewall of the inner wall of the process chamber 50 . In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion guns I1 and I2 , and preset power is supplied to the targets T1 and T3 to convert Ar gas into a plasma. On the side wall of the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) and the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) A material having a large getter effect can be attached to the remaining gas or water (H ₂ O).

In addition, the method of using the above-mentioned ion gun (I1, I2) and the method of using the target (T1, T3) together is also possible by using the case of FIG. 5 and the case of FIG. 6 together.

In this case, as shown in FIG. 5 , the ion guns I1 and I2 are directed toward other than the film formation area FFA (the side that does not face the substrate S). In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion guns I1 and I2 to convert the Ar gas into a plasma. On the side wall of the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) and the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) A material having a large getter effect is attached to the remaining gas or water (H ₂ O).

At this time, the deposition preventing plates MS1 and MS2 formed on the upper inner wall of the process chamber 50 are sputtered by the ion guns I1 and I2 .

In this state, as shown in FIG. 6 , a holder holding a plurality of targets and ion guns is rotated to place the targets T1 and T3 other than the film formation area FFA (the side that does not face the substrate S). ), the targets T1 and T3 face the upper inner wall of the process chamber 50 . After the pressure in the process chamber 50 is stabilized, preset power is supplied to the targets T1 and T3 to convert the Ar gas into a plasma. Accordingly, a material having a large getter effect can be formed even on the deposition-preventing plates MS1 and MS2 formed on the upper inner wall of the process chamber 50 sputtered by the ion guns I1 and I2.

(Comparative example)

The adhesion film formation process was performed in the conventional process (patent document 1 mentioned above) which does not perform the getter process of this invention mentioned above. 14 is a flowchart showing a processing procedure of a film forming method in which a getter step is not performed.

In step 61 , the carrier CR is transferred to the holding unit 60 in the process chamber 50 .

In step 62, an etching process is performed. A holder holding the plurality of targets and the ion gun is rotated to direct the ion guns I1 and I2 toward the film formation area FFA. After the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion guns I1 and I2 to convert the Ar gas into a plasma. And in order to perform an etching process, the conveyance of the carrier CR is started toward the film-forming area|region FFA, and the base material S is etched by passing through the film-forming area|region FFA a predetermined number of times at a preset conveyance speed. When the etching process is completed, voltage application to the ion guns I1 and I2 is stopped. In this embodiment, although Ar gas was used as the introduction gas, it is not limited to this, Reactive gas, such as nitrogen, oxygen, hydrogen, can also be used.

In step 63, the cleaning process of the target used in adhesion film formation is performed. By rotating the holder holding the plurality of targets and the ion gun, the targets T1 and T3 (for example, both Ti targets) are directed outside the film formation area FFA, and the pressure in the process chamber 50 is stabilized. After this, power is applied to the targets T1 and T3 (for example, both Ti targets) to plasma the Ar gas, and predetermined time targets T1 and T3 (for example, all Ti targets) with a preset power. ) is cleaned.

In step 64, an adhesion film forming process is performed. The holding body holding the plurality of targets and the ion gun is rotated to direct the targets T1 and T3 (for example, both Ti targets) toward the film formation area FFA (the side opposite to the substrate S). After the pressure in the process chamber 50 is stabilized, a preset electric power is supplied to the targets T1 and T3 (for example, both Ti targets) to convert the Ar gas into a plasma. Then, in order to form an adhesion film (for example, a Ti film), conveyance of the carrier CR is started toward the film formation area FFA, and passes through the film formation area FFA a specified number of times at a preset conveying speed. , an adhesion film (eg, Ti film) is formed on the substrate S.

In step 65, a cleaning process of the target used in forming the seed film is performed. By rotating the holder holding the plurality of targets and the ion gun, the targets T2 and T4 (for example, both Cu targets) are directed outside the film formation area FFA, and the pressure in the process chamber 50 is stabilized. After this, power is applied to the targets T2 and T4 (for example, all Cu targets) to plasma the Ar gas, and the predetermined time targets T2 and T4 (for example, all Cu targets) with a preset power. ) is cleaned.

In step 66, a seed film forming step is performed. The holding body holding the plurality of targets and the ion gun is rotated to direct the targets T2 and T4 (for example, all Cu targets) toward the film formation area FFA. After the pressure in the process chamber 50 is stabilized, a preset power is supplied to the targets T2 and T4 (for example, both Cu targets) to convert the Ar gas into a plasma. Then, in order to form a seed film (for example, a Cu film), conveyance of the carrier CR is started toward the film formation area FFA, and passes through the film formation area FFA a specified number of times at a preset conveying speed. , a seed film (eg, Cu film) is formed on the adhesion film formed on the substrate S.

In step 67 , the carrier CR is separated from the holding unit 60 in the process chamber 50 , and the carrier CR is discharged from the process chamber 50 .

Fig. 15 shows the first embodiment (Example 1-1 to Example 1-3) and the second embodiment (Example 1-1 to Example 1-3, Example 2-1 to Example 2-3) , A diagram showing an example of an output signal of the gas introduction system 1024 in the case of repeating the getter process twice or more in the getter process of Examples 3-1 to 3-3). Ar gas is supplied to the process chamber 50 . In the output signal of the gas introduction system 1024 , the period of the gas introduction system output signal (period of the getter process) is P, the gas supply time (the time for supplying Ar gas to the process chamber 50 ), the process chamber 50 ) for the gas or water (H ₂ O) remaining in the film forming time) is P1, a predetermined time, the time to exhaust the inside of the process chamber 50 is P2, the duty ratio is D=P1 /P.

In P1, the Ar gas supplied to the process chamber 50 starts to be supplied into the process chamber simultaneously with the start of the first process or the third process shown in FIG. It is preferable to stop the supply in the process chamber simultaneously with the termination.

In addition, it is preferable to start exhausting the inside of the process chamber 50 before or simultaneously with the start of the 1st process shown in FIG.

Further, in P2, it is preferable to exhaust the inside of the process chamber 50 for a predetermined time while the supply of Ar gas into the process chamber is stopped simultaneously with the completion of the first or third step shown in FIG. 3 . .

The supply of Ar gas into the process chamber 50 is the gas introduction part G1 of the film forming apparatus of FIGS. 1 and 9 , and the exhaust of the process chamber 50 is the exhaust part V50 of the film forming apparatus of FIGS. 1 and 9 . done in

Fig. 16 shows the first embodiment (Example 1-1 to Example 1-3) and the second embodiment (Example 1-1 to Example 1-3, Example 2-1 to Example 2-3) , Example 3-1 to Example 3-3) In the getter process, an example of the output signal of the power supply (SP) 1022 or 1023 and the power supply (IG) 1023 when the getter process is repeated twice or more It is a drawing showing In this case, Ar gas is supplied to the process chamber 50 . In the output signal of the power supply (SP) 1022 or the power supply (IG) 1023 , the cycle of the power output signal (the cycle of the getter process) is P, the gas supply time (the gas remaining in the process chamber 50 or The time for forming a film of a material having a large getter effect with respect to water (H ₂ O)) is P1, a predetermined time, the time to exhaust the inside of the process chamber 50 is P2, the duty ratio is D=P1/P, 15 is outputted in synchronization with the gas introduction system.

Further, in P1 , the power supplied to the process chamber 50 starts to be supplied into the process chamber simultaneously with the start of the first process or the third process shown in FIG. 3 , and the first process or the third process is terminated. At the same time, the supply into the process chamber is stopped.

In addition, it is preferable to start exhausting the inside of the process chamber 50 before or simultaneously with the start of the 1st process shown in FIG.

Further, in P2, it is preferable to exhaust the inside of the process chamber 50 for a predetermined time while the supply of Ar gas into the process chamber is stopped simultaneously with the completion of the first or third step shown in FIG. 3 . .

The output of power in the process chamber 50 is an output signal of the power supply (SP) 1022 or the power supply (IG) 1023 of FIGS. 2 and 10 , and the exhaust in the process chamber 50 is shown in FIGS. 1 and 9 . is performed in the exhaust part V50 of the film forming apparatus of

Fig. 17 shows the time of the getter process and the process after the getter process of the film-forming methods of Example 1-2 of the first embodiment and Example 1-2, Example 2-2 and Example 3-2 of the second embodiment; It is a figure which shows the relationship of the water (H ₂ O) partial pressure of a thread.

The inventor discovered that it is preferable that the water (H ₂ O) partial pressure is 0.3 or less, when the adhesiveness of a base material and an adhesive film is considered without reducing productivity.

When the getter process time was set to 300 seconds, as shown in FIG. 17 , when the getter process was repeated two or more times at a duty ratio of 50%, the partial pressure of water (H ₂ O) became 0.3. In contrast, when the getter process time was set to 300 seconds, as shown in FIG. 17 , in the case of a duty ratio of 100% for performing the getter process once, the partial pressure of water (H ₂ O) was 0.45. When the getter process is repeated two or more times at a duty ratio of 50 percent, the partial pressure of water (H 2 O) can be reduced to about 2/3 (0.3/0.45) as compared to the partial pressure of water (H ₂ O) when the getter process is performed once.

On the other hand, as shown in FIG. 17 , when the getter process is performed once, the getter process time is 400 seconds for the H ₂ O partial pressure to be 0.3. In this way, if the getter process is repeated two or more times with a duty ratio of 50 percent, the getter process time can be shortened by 100 seconds (400 seconds). Accordingly, if the getter process is repeated two or more times with a duty ratio of 50%, the throughput can be reduced to about 3/4 (300/400) compared to the case of 100% of the duty ratio where the getter process is performed once.

In addition, the getter process of the other film-forming methods mentioned above (Example 1-1 and Example 1-3 of Embodiment 1, Example 1-1, Example 1-3, Example 2-1 of Embodiment 2, and Example 2) When Example 2-3, Example 3-1, and Example 3-3) are carried out, gas or water ( Since a material having a large getter effect can be attached to H ₂ O), a better effect can be obtained than in the case shown in FIG. 17 .

18 shows the getter process time of 300 seconds of the getter process of the film-forming methods of Example 1-2 of the first embodiment and Example 1-2, Example 2-2, and Example 3-2 of the second embodiment. It is a figure which shows the relationship between the duty ratio in the process chamber and the partial pressure of water (H ₂ O) in the process chamber after the getter process. As shown in FIG. 18 , in the case of the duty ratio of 0% in which the evacuation is performed without performing the getter process, the partial pressure of water (H ₂ O) is 0.6. As shown in FIG. 18 , in the case of a duty ratio of 100% in which the getter process is performed once, the partial pressure of water (H ₂ O) is 0.45. On the other hand, if the getter process is repeated two or more times, the partial pressure of water (H ₂ O) in the process chamber is reduced, the partial pressure of H ₂ O becomes 0.3 or less in the range of 34% to 66% of the duty ratio, and the Compared with the case, the partial pressure of water (H ₂ O) is reduced to about 1/2 (0.3/0.6). In addition, if the getter process is repeated two or more times, the partial pressure of water (H ₂ O) in the process chamber is reduced, and the partial pressure of water (H ₂ O) becomes 0.3 or less in the range of 34 percent to 66 percent of the duty ratio, and the duty ratio is 100 percent. Compared with the case of , the partial pressure of water (H ₂ O) is reduced to about 2/3 (0.3/0.45).

In addition, the getter process of the other film-forming methods mentioned above (Example 1-1 and Example 1-3 of Embodiment 1, Example 1-1, Example 1-3, Example 2-1 of Embodiment 2, and Example 2) When Example 2-3, Example 3-1, and Example 3-3) are carried out, gas or water ( Since a material having a large getter effect can be attached to H ₂ O), a better effect can be obtained than in the case shown in FIG. 18 .

Fig. 19 shows the repeated operation and exhaust operation in the getter process of the film forming methods of Example 1-2 of Embodiment 1 and Example 1-2, Example 2-2, and Example 3-2 of the second embodiment; It is a diagram showing the relationship between the partial pressure of water (H ₂ O) in the process chamber. In the case of the Ti film formation process only once (the graph on the right of FIG. 19 ) with Ar gas introduced into the process chamber, the partial pressure of water (H ₂ O) is 0.45. In the case of a process in which Ti film formation is intermittently repeated while Ar gas is introduced into the process chamber (without exhaust between Ti film formation) (corresponding to Patent Document 2, the graph in the center of Fig. 19), the partial pressure of water (H ₂ O) is 0.4 to be. On the other hand, in the case of the getter process of the present invention (the left graph of FIG. 19) in which the getter process of forming the Ti film and evacuating the Ti film after forming the Ti film as a series of operations is repeated twice or more, the H ₂ O partial pressure is 0.3 or less. , the partial pressure of water (H ₂ O) was reduced to about 2/3 (0.3/0.45) compared to the case of the Ti film formation process only once (the graph on the right of FIG. 19) with Ar gas introduced into the process chamber. About 3/4 (0.3/0.4) compared to the case of the process (corresponding to Patent Document 2, the graph in the center of Fig. 19) in which the Ti film formation is intermittently repeated while Ar gas is introduced ) can be reduced.

As described above, according to the present invention, the partial pressure of water (H ₂ O) is 0.3 or less, and the adhesion between the substrate S and the adhesion film can be improved without reducing productivity.

As mentioned above, although preferred Embodiment 1 and Embodiment 2 of this invention were described, this invention is not limited to these Embodiment 1 and Embodiment 2, Various deformation|transformation and change are possible within the scope of the summary.

In this Embodiment 1 and this Embodiment 2, although the getter material was demonstrated as Ti, it is not limited to Ti, A substance with a large getter effect with respect to oxygen and water which consists of Ta, Zr, Cr, Nb, Mo, etc. can be used. can Moreover, it can also be set as two or more alloys with a large getter effect.

In addition, although the adhesion film of this Embodiment 1 and this Embodiment 2 was demonstrated as a Ti film, it is not limited to a Ti film, TiN, Ta, TaN, Ni, Cr, NiCr alloy, Ta alloy, Cu alloy, etc. can be used. can Here, considering the productivity, a Cu film is formed on the adhesion film as a seed film for stably growing electrolytic Cu plating. . Since Cu alloy is not a material having a large getter effect to oxygen or water, when a Cu alloy is used as an adhesion film, a material having a large getter effect is not mounted on the cathode, but in the present invention, a getter material supply source (MS) and it is not limited to the sputter film type, and a getter process can be performed.

In addition, although the seed film of this Embodiment 1 and this Embodiment 2 was demonstrated as a Cu film, it is not limited to a Cu film, CuAl alloy, CuV alloy, etc. can be used.

15 and 16, the duty ratio D=P1/P of the third process and the fourth process is within the range of 34% to 66%, and the duty ratio D=P1/P of the first process and It is preferable to control the gas introduction part G1 of FIG. 1 or 9 and the exhaust part V50 of FIG. 1 or 9 so that the duty ratio D=P1/P of the second process is smaller than that of P1/P.

15 and 16, the duty ratio D=P1/P of the fifth step and the sixth step within the range of 34% to 66%, D=P1/P of the third step and It is preferable to control the gas introduction part G1 of FIG. 1 or 9 and the exhaust part V50 of FIG. 1 or 9 to be smaller than the duty ratio D=P1/P of the fourth process.

As a result, the time P1 of the third process becomes smaller than the time P1 of the first process, and the time P1 of the fifth process becomes smaller than the time P1 of the third process. is greater than the time P2 of , and the time P2 of the sixth process becomes greater than the time P2 of the fourth process.

Thereby, since the getter effect at the initial stage of the getter process with a high water (H ₂ O) partial pressure is increased, the desired water (H ₂ O) partial pressure can be reached in a short time, thereby improving productivity.

Claims (26)

process room,
A processing unit installed in the process chamber and forming an adhesion film
As a film forming apparatus having a,
The inner wall surface of the process chamber is formed of a material having a large getter effect with respect to the gas or water (H ₂ O) remaining in the process chamber. According to claim 1,
a holding part for holding a base material in the process chamber;
a driving unit for moving the holding unit holding the substrate so that the substrate passes through a film formation region in the process chamber;
a cooling unit for cooling the holding unit
A film forming apparatus comprising: 3. The method of claim 1 or 2,
The film forming apparatus includes a platform that can be used to exchange the substrate with other devices other than the film forming apparatus;
A load lock chamber that can be used to exchange an unprocessed substrate provided from the platform and a post-filmed substrate provided from the process room.
A film forming apparatus comprising: 4. The method according to any one of claims 1 to 3,
The film forming apparatus according to claim 1, wherein the processing unit is constituted by a rotating cathode that rotates a support for holding a plurality of targets and an ion gun. process room,
a processing unit installed in the process chamber and forming an adhesion film;
an exhaust unit capable of evacuating the inside of the process chamber;
A gas introduction unit for introducing a gas for forming the adhesion film into the process chamber
As a control device of a film forming apparatus having a,
The control device includes a storage unit for storing a control program;
The control program is
a first step of forming a film in the process chamber with a material having a large getter effect on the gas or water (H ₂ O) remaining in the process chamber;
a second step of evacuating the inside of the process chamber for a predetermined time after the first step;
After the second process, a third process of forming a film in the process chamber with a material having a large getter effect with respect to the gas or water (H ₂ O) remaining in the process chamber;
a fourth step of evacuating the inside of the process chamber for a predetermined time after the third step;
After the fourth step, an adhesion film forming step of forming an adhesion film on the substrate installed in the process chamber is included;
When the time of the first process or the third process is P1, the total time of the first process and the second process, or the total time of the third process and the fourth process is P, the duty ratio D=P1 The control device according to claim 1, wherein the exhaust section and the gas introduction section are controlled so that /P becomes 34% or more and 66% or less. 6. The method of claim 5,
The gas supplied to the process chamber is supplied into the process chamber simultaneously with the start of the first process or the third process using the gas introduction unit, and is supplied to the process chamber simultaneously with the end of the first process or the third process. A control device, characterized in that the supply is stopped. 7. The method of claim 5 or 6,
The method for evacuating the process chamber is characterized in that the evacuation of the process chamber is started simultaneously with the start of the first process using the evacuation unit. 8. The method according to any one of claims 5 to 7,
The electric power supplied to the process chamber is supplied to the process chamber simultaneously with the start of the first process or the third process by using a power supply, and the process chamber is started simultaneously with the completion of the first process or the third process. A control device for stopping supply into the room. A first step of forming a film in a process chamber, a material having a large getter effect with respect to gas or water (H ₂ O) remaining in the process chamber;
a second step of evacuating the inside of the process chamber for a predetermined time after the first step;
After the second process, a third process of forming a film in the process chamber with a material having a large getter effect with respect to the gas or water (H ₂ O) remaining in the process chamber;
a fourth step of evacuating the inside of the process chamber for a predetermined time after the third step;
After the fourth step, an adhesion film forming step of forming an adhesion film on the substrate installed in the process chamber
A film-forming method comprising a. 10. The method of claim 9,
When the time of the first process or the third process is P1, the total time of the first process and the second process, or the total time of the third process and the fourth process is P, the duty ratio D=P1 /P is 34% or more and 66% or less, The film-forming method characterized by the above-mentioned. 11. The method of claim 9 or 10,
and a seed film forming process of forming a seed film on the adhesion film after the adhesion film forming process. 12. The method according to any one of claims 9 to 11,
An etching step of etching the surface of the substrate is included before the first step. 13. The method according to any one of claims 9 to 12,
After the fourth step, an etching step of etching the surface of the substrate is included. 14. The method according to any one of claims 9 to 13,
The film forming method, characterized in that the substrate is any one of a Si substrate, a rectangular member made of glass or resin, or a resin film fixed to a support. 15. The method according to any one of claims 9 to 14,
The adhesion film is any one of a Ti film, a TiN film, a Ta film, a TaN film, a Ni film, a Cr film, a NiCr alloy film, a Ta alloy film, and a Cu alloy film. 12. The method of claim 11,
The seed film is any one of a Cu film, a CuAl alloy film, and a CuV alloy film. 17. The method according to any one of claims 9 to 16,
In the first step or the third step, the target for forming the adhesion film, the target for forming the seed film, and a holder for holding the ion gun are rotated so that the ion gun is positioned on the side that does not face the substrate by etching a material having a large getter effect with respect to gas or water (H ₂ O) formed on the inner wall surface of the process chamber, in the process chamber, to gas or water (H ₂ O) remaining in the process chamber A film formation method characterized in that a material having a large getter effect is formed into a film. 18. The method of claim 17,
In the first step or the third step, the holding body is rotated so that a target for forming the adhesion film is directed toward a side not facing the substrate, and the adhesion film is formed on the inner wall surface of the process chamber. A film-forming method characterized. 19. The method of claim 17 or 18,
The etching step comprises rotating the holder, directing the ion gun to a side opposite to the substrate, and etching the surface of the substrate. 20. The method according to any one of claims 17 to 19,
The adhesion film forming step comprises rotating the holder so that a target for forming the adhesion film is directed to a side opposite to the substrate, and the adhesion film is formed on the substrate. 21. The method according to any one of claims 11 to 20,
The seed film forming step comprises rotating the holder so that a target for forming the seed film is directed toward a side opposite to the substrate, and the seed film is formed on the adhesion film. 22. The method according to any one of claims 9 to 21,
The gas supplied to the process chamber starts supplying the gas into the process chamber simultaneously with the start of the first process or the third process, and stops supplying the gas into the process chamber simultaneously with the end of the first process or the third process. A film-forming method characterized. 23. The method according to any one of claims 9 to 22,
The method for evacuating the process chamber is characterized in that the evacuation of the process chamber is started simultaneously with the start of the first process. 24. The method according to any one of claims 9 to 23,
The electric power supplied to the process chamber starts supplying power into the process chamber simultaneously with the start of the first process or the third process, and stops the supply into the process chamber simultaneously with the end of the first process or the third process. Film formation method, characterized in that. 6. The method of claim 5,
Within the range where the duty ratio D=P1/P is 34% or more and 66% or less, the duty ratios D=P1/P of the third process and the fourth process are the duty ratios of the first process and the second process A control device according to claim 1, wherein the exhaust portion and the gas introduction portion are controlled so as to be smaller than D=P1/P. 11. The method of claim 10,
Within the range where the duty ratio D=P1/P is 34% or more and 66% or less, the duty ratios D=P1/P of the third process and the fourth process are the duty ratios of the first process and the second process A film-forming method characterized by making it smaller than D=P1/P.

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