WO2021199479A1

WO2021199479A1 - Film formation device, device for controlling film formation device, and film formation method

Info

Publication number: WO2021199479A1
Application number: PCT/JP2020/041999
Authority: WO
Inventors: 弘士薬師神; 怜士坂本; 雅弘芝本
Original assignee: キヤノンアネルバ株式会社
Priority date: 2020-04-01
Filing date: 2020-11-11
Publication date: 2021-10-07
Also published as: JP2021165432A; TW202140828A; TWI807269B; TW202336253A

Abstract

A film formation device according to the present invention is provided with a process chamber and a treatment unit which is arranged in the process chamber and in which an adhesive film is formed. The inner wall surface of the process chamber is formed from a substance having a high getter effect against a gas or water (H2O) remaining in the process chamber.

Description

Film forming device, control device of film forming device and film forming method

The present invention relates to a film forming apparatus for forming a film on the surface of a substrate including a printed circuit board and a film substrate, a control device for the film forming apparatus, and a film forming method.

In the mounting process of mounting an electronic component on a substrate including a printed circuit board and a film substrate, an adhesion layer that serves as a base for wiring connected to the electronic component and a seed layer for forming the wiring by plating are formed. For example, a plating method or a sputtering method is used to form each layer.

Japanese Unexamined Patent Publication No. 7-310180 Japanese Unexamined Patent Publication No. 2-50959

For example, Patent Document 1 describes a gas discharge / replacement step in which a rare gas is introduced into the vacuum chamber after the gas in the vacuum chamber is discharged by evacuation in order to form a thin film having excellent adhesion in a short time. This is a thin film forming method in a low-pressure rare gas environment, which comprises a film forming step of adhering a thin film forming substance on an adherend in a rare gas environment, and the gas discharge / replacement step is performed at least twice or more. A thin film forming method in which the film forming step is carried out after the execution is described.
However, in the thin film forming method described in Patent Document 1, the adhesion layer and the substrate in the interface and adhesion layer of the film of water (H 2 _O) gas due to hydrogen and oxygen is mixed with the adhesion layer and the substrate and the Sufficient adhesion cannot be obtained.

In Patent Document 2, in order to form a pure rare earth metal thin film, it was held in a vacuum chamber of a magnetron type sputtering apparatus by a main cathode on which a rare earth metal main target was mounted and a substrate holder at a position facing the main target. A rare earth metal thin film film forming apparatus in which an auxiliary cathode with an active metal auxiliary target attached is installed at a position beside the substrate and the substrate holder toward the inner wall side of the chamber, and an inert gas introduction tube is attached to the vacuum chamber wall. Is described.
However, in the film forming apparatus described in Patent Document 2, since the auxiliary cathode to which the active metal auxiliary target is attached faces the inner wall side of the chamber at the side position of the substrate and the substrate holder, it is in a space other than the inner wall side of the chamber. It is insufficient as a getter to capture residual oxygen and nitrogen.

The present invention has been made in view of the above-mentioned problems of the prior art, and is a film forming apparatus capable of improving the adhesion between the base material and the adhesive film without lowering the productivity, a film forming apparatus control device, and a film forming apparatus. To provide a method.

In order to achieve the above object, the invention according to claim 1 is a film forming apparatus having a process chamber and a processing unit provided in the process chamber to form an adhesive film on a substrate. the inner wall surface of the process chamber is obtained by the film forming apparatus characterized in that it is formed by the getter effect is greater substance to gas or water (H 2 _O) remaining in the process chamber.
In order to achieve the above object, the invention according to claim 5 is a process chamber, a processing unit provided in the process chamber to form an adhesive film on a substrate, and an exhaust unit capable of vacuum exhausting the process chamber. A control device for a film forming apparatus having a gas introduction unit for introducing a gas for forming the adhesive film into the process chamber, and the control device includes a storage unit for storing a control program. wherein the control program, said process chamber, wherein a first step of forming with respect to the gas or water remaining in the process chamber (H 2 _O) a getter effect is large material, a predetermined time after said first step, said a second step of exhausting the process chamber, wherein after the second step, the process chamber, a third step of forming a getter-effective substances against residual gas or water (H 2 _O) in the process chamber A fourth step of exhausting the process chamber for a predetermined time after the third step, and after the fourth step, an adhesive film forming step of forming an adhesive film on a substrate provided in the process chamber. When the time of the first step or the third step is P1, the total time of the first step and the second step, or the total time of the third step and the fourth step is P, the duty ratio D = The control device is characterized by controlling the exhaust unit and the gas introduction unit so that P1 / P is 34% or more and 66% or less.
To achieve the above object, the invention of claim 9, wherein the process chamber, a first step of forming a getter-effective substances against residual gas or water (H 2 _O) in the process chamber a predetermined time after said first step, a second step of exhausting the process chamber, wherein after the second step, the process chamber, the getter effect with respect to gas or water (H 2 _O) remaining in the process chamber A third step of forming a large substance, a fourth step of exhausting the process chamber for a predetermined time after the third step, and a fourth step of exhausting the process chamber, and after the fourth step, adhesion to the substrate provided in the process chamber. This is a film forming method including an adhesive film forming step of forming a film.

According to the film forming apparatus, the control device of the film forming apparatus, and the film forming method according to the present invention, the adhesion between the base material and the adhesive film can be improved without lowering the productivity.
Other features and advantages of the present invention will become apparent in the following description with reference to the accompanying drawings. In the attached drawings, the same or similar configurations are given the same reference numbers.

It is sectional drawing which cut | cut the film forming apparatus of 1st Embodiment of this invention in the plane along the vertical direction. It is a figure which shows the schematic structure of the control system in the process room of the film forming apparatus of 1st Embodiment of this invention. It is a figure which shows the flow of the film forming method of Example 1-1, Example 1-2 and Example 1-3 of the 1st Embodiment of this invention. It is a figure which shows the specific operation example of the film formation procedure of Example 1-1, Example 1-2 and Example 1-3 of the 1st Embodiment of this invention. It is a figure which shows the specific operation example of the film formation procedure of Example 1-1, Example 1-2 and Example 1-3 of the 1st Embodiment of this invention. It is a figure which shows the specific operation example of the film formation procedure of Example 1-1, Example 1-2 and Example 1-3 of the 1st Embodiment of this invention. It is a figure which shows the specific operation example of the film formation procedure of Example 1-1, Example 1-2 and Example 1-3 of the 1st Embodiment of this invention. It is a figure which shows the specific operation example of the film formation procedure of Example 1-1, Example 1-2 and Example 1-3 of the 1st Embodiment of this invention. It is a schematic cross-sectional view which cut the film forming apparatus of 2nd Embodiment of this invention in the plane parallel to the horizontal plane. It is a figure which shows the schematic structure of the control system in the load lock chamber and the process chamber of the film forming apparatus of the 2nd Embodiment of this invention. It is a figure which shows the flow of the film forming method of Example 1-1, Example 1-2 and Example 1-3 of the 2nd Embodiment of this invention. It is a figure which shows the flow of the film forming method of Example 2-1, Example 2-2 and Example 2-3 of the 2nd Embodiment of this invention. It is a figure which shows the flow of the film forming method of Example 3-1 and Example 3-2 and Example 3-3 of the 2nd Embodiment of this invention. It is a figure which shows the flow of the film formation method of a conventional process. It is a figure which shows an example of the output signal of the gas introduction system in the getter process of this invention (the first embodiment, the second embodiment). It is a figure which shows an example of the output signal of the power source (IG) in the getter process of this invention (the first embodiment, the second embodiment). When the first embodiment (Example 1-2), the second embodiment (Example 1-2, Example 2-2, Example 3-2) and the film forming method of the conventional step are applied, the time of the getter step and is a diagram showing the relationship of the getter processing chamber of the water after step (H 2 _O) partial pressure. Duty ratios when the first embodiment (Example 1-2), the second embodiment (Example 1-2, Example 2-2, Example 3-2) and the film forming method of the conventional process are used. is a diagram showing the relationship of the process chamber of water (H 2 _O) partial pressure after getter process. Exhaust operation when the first embodiment (Example 1-2), the second embodiment (Example 1-2, Example 2-2, Example 3-2) and the film forming method of the conventional process are used. is a diagram showing the relationship of the process chamber of water (H 2 _O) partial pressure.

The present inventor has found the present invention from the following findings. The findings of the inventor will be described with reference to FIGS. 1, 2 and 3.

(First Embodiment)
FIG. 1 is a cross-sectional view of the film forming apparatus of the first embodiment of the present invention cut along a plane in the vertical direction. Here, the XY plane is a plane parallel to the horizontal plane, and the Z axis is an axis parallel to the vertical direction.
The first major aspect of the film formation apparatus of the present invention, the inner wall surface of the process chamber 50 is formed by the getter effect material with a large relative gas or water remaining in the process chamber 50 (H 2 _O) The protective plate MS1 is installed and functions as a getter material supply source MS1. The material having a large getter effect is, for example, titanium (Ti), and it is desirable that the material has an adhesive film. The adhesive film is preferably a film that serves as a base for wiring connected to electronic components on the base material, and is a Ti film, a TiN film, a Ta film, a TaN film, a Ni film, a Cr film, a NiCr alloy film, and a Ta alloy. A membrane or a Cu alloy membrane is preferable.
The protective plate MS1 is preferably installed on the upper surface of the inner wall of the process chamber 50 facing the substrate S, but may be installed on both side surfaces of the inner wall of the process chamber 50 not facing the substrate S.
As shown in FIG. 1, the film forming apparatus of the present invention is provided in the process chamber 50 and the process chamber 50, and is a process of forming an adhesive film on the base material S, which is a base for wiring connected to an electronic component. A part FF1, an exhaust part V50 capable of evacuating the inside of the process chamber 50, a gas introduction part G1 for introducing a gas for forming the adhesive film in the process chamber 50, and a base material S in the process chamber 50. A holding unit 60 for holding the base material S, a driving unit (not shown) for moving the holding unit 60 holding the base material S so that the base material S passes through a film forming region in the process chamber 50, and a holding unit 60. A cooling unit (not shown) for cooling and a control device (not shown) for controlling the exhaust unit V50 and the gas introduction unit G1 are provided. The details of the control device will be described with reference to FIG. 2 described later.
The control device includes a storage unit that stores a control program.
The processing unit FF1 is composed of a plurality of targets (T1, T2) and a rotating cathode that rotates a support that holds the ion gun I1.
Target T1 is a getter effect is greater substance to gas or water remaining in the process chamber 50 (H 2 _O), for example, titanium (Ti), the adhesion layer (Ti layer formed on the substrate S , TiN film, Ta film, TaN film, Ni film, Cr film, NiCr alloy film, Ta alloy film, Cu alloy film).
The target T2 is, for example, copper (Cu), and it is desirable that the target T2 is a material for a seed film formed on the adhesion film. The seed film is preferably a film for forming wiring formed on the adhesive film, and is preferably a Cu film, a CuAl alloy film, or a CuW alloy film.
As described above, the inner wall surface of the process chamber 50, the deposition preventing plate is large getter effect with respect to gases or water remaining in the process chamber 50 (H 2 _O) and is installed, functions as a getter material supply source MS do.
In this state, when a voltage (not shown) is applied to the ion gun I1 to turn Ar gas into plasma, for example, the Ti-made adhesive plate MS1 is sputtered, and the process chamber of the film formation region FFA (the side facing the substrate S). A Ti film can be attached to the inner wall of the 50 and the magnetic pole of the ion gun I1.
Instead of using the ion gun I1, for example, the target T1 made of Ti may be used. In this case, the target T1 is directed to a side other than the film formation region FFA (the side not facing the substrate S). When a voltage is applied to the target T1 in this state to turn Ar gas into plasma, a Ti film is formed on the adhesion plate MS1 and the inner wall of the process chamber 50 other than the film formation region FFA (the side not facing the substrate S) is formed. it can be deposited getter effect material with a large relative gas or water remaining in the process chamber 50 (H 2 _O) to.

FIG. 2 is a block diagram showing a schematic configuration of a control system of the process chamber 50 in the film forming apparatus 1 of the first embodiment of the present invention.

In FIG. 2, the control device 1000 is a control unit as a control means for controlling the process chamber 50 of the film forming device 1. The control device 1000 stores a CPU 1001 that executes processing operations such as various calculations, controls, and discriminations, and a ROM 1002 that stores a control program such as processing executed by the CPU 1001 that will be described later in FIGS. 3 to 9. (Also referred to as "memory unit"). Further, the control device 1000 has a RAM 1003 for temporarily storing data during the processing operation of the CPU 1001, input data, and the like, a non-volatile memory 1004, and the like. Further, the control device 1000 includes an input operation unit 1005 including a keyboard for inputting predetermined commands or data, various switches, and a display unit for displaying various displays such as an input / setting state of the film forming apparatus 1. 1006 is connected. Further, the control device 1000 includes a power supply (SP) 1022 for the sputtering cathode of the process chamber 50, a power supply (IG) 1023 for the ion gun, a gas introduction system 1024, a substrate holder drive mechanism 1025, a pressure measuring device 1026, and a holder transfer mechanism. The 1027, the cathode rotation mechanism 1028, the exhaust unit V50: 1030, and the like are connected via drive circuits 1011 to 1017 and 1029, respectively.

(Example 1-1)
FIG. 3 is a diagram showing a flow of a film forming method of Example 1-1, Example 1-2, and Example 1-3 of the first embodiment of the present invention. A major feature of the film forming method of the present invention is that the process chamber 50 is placed in the process chamber 50 before the adhesion film forming step of forming the adhesion film on the base material S provided in the process chamber 50 shown in FIG. evacuating the first step of forming a getter-effective substances against residual gas or water (H 2 _O) and (step 102) a predetermined time after the first step (step 102), the process chamber 50 in The second step (step 103) has been carried out at least twice. As shown in FIG. 3, the film forming method of the present invention, the process chamber 50, a first step of forming a getter-effective materials to gases or water remaining in the process chamber 50 (H 2 _O) ( Step 102), the second step (step 103) of exhausting the process chamber 50 for a predetermined time after the first step (step 102), and after the second step (step 103), in the process chamber 50, in the process chamber 50. a third step of forming a getter-effective substances against residual gas or water (H 2 _O) and (step 104) a predetermined time after the third step (step 104), the exhausting process chamber 50 The four steps (step 105) and after the fourth step (step 105) include an adhesive film forming step (step 107) of forming an adhesive film on the substrate S provided in the process chamber 50. Hereinafter, in this specification, the term "getter process" shown in FIG. 3, first depositing a getter effect is greater substance to gas or water remaining in the "process chamber 50 (H 2 _O) 1 "Step (step 102)" and "second step (step 103) of exhausting the process chamber 50 for a predetermined time after the first step (step 102)" or "gas or water (H ₂ O) remaining in the process chamber 50". 3rd step (step 104) for forming a substance having a large getter effect with respect to) "and" 4th step (step 105) for exhausting the process chamber 50 for a predetermined time in the third step (step 104) ". To say.
The “getter process” refers to a process in which the getter process is performed at least twice or more. “Steps 102 to 105” shown in FIG. 3 are referred to as “getter steps”. Therefore, in the present specification, performing (step 102 and step 103) or (step 104 and step 105) shown in FIG. 3 after step 104 shown in FIG. 3 is also referred to as a “getter step”.
As shown in FIG. 3, an etching step of etching the surface of the base material S (step 101) before the first step of step 102, and an etching step of etching the surface of the base material S after the fourth step of step 105 (step 101). Step 106), an etching step (step 101 and step 106) for etching the surface of the base material S may be included before the first step of step 102 and after the fourth step of step 105.
As shown in FIG. 3, after the adhesive film forming step (step 107), a seed film forming step (step 107) for forming a seed film for forming wiring on the adhesive film may be included.
It is desirable that the base material S in

step

101 or 102 is either a Si substrate, a glass or resin square member, or a resin film fixed to a support.
The adhesion film in step 107 is preferably any one of a Ti film, a TiN film, a Ta film, a TaN film, a Ni film, a Cr film, a NiCr alloy film, a Ta alloy film, and a Cu alloy film.
The seed film in step 108 is preferably any of a Cu film, a CuAl alloy film, and a CuW alloy film.
When performing the etching step of step 101 or step 106, the holding body holding the plurality of targets and the ion gun is rotated to direct the ion gun I1 toward the film formation region FFA (base material S side). After the pressure in the process chamber 50 is stabilized from the gas introduction unit G1, a voltage is applied to the ion gun I1 to turn Ar gas into plasma. Then, the base material S is etched. When the etching step of step 101 or step 106 is completed, the voltage application to the ion gun I1 is stopped.
When the first step of step 102 or the third step of step 104 is performed, the holding body holding the plurality of targets and the ion gun is rotated to move the ion gun I1 to a position other than the film formation region FFA (the side not facing the base material S). Turn. A protective plate MS1 is installed as a getter material supply source MS1 on the inner wall of the chamber of the process chamber 50 other than the film formation region FFA. In this state, a voltage is applied to the ion gun I1 to turn Ar gas into plasma. , deposition preventing plate MS1 is sputtered, to deposit the getter-effective substances on the inner wall of the process chamber 50 to the residual gas or water (H 2 _O) deposition region FFA (substrate S opposite to the side) be able to.
When the adhesion film forming step is performed in step 107, the holding body holding the plurality of targets and the ion gun is rotated to direct the target T1 toward the film formation region FFA (base material S side). After the pressure in the process chamber 50 is stabilized, a preset electric power is supplied to the target T1 to turn Ar gas into plasma. Then, an adhesive film is formed on the base material S.
When the seed film forming step is performed in step 108, the retainer holding the plurality of targets and the ion gun is rotated to direct the target T2 toward the film formation region FFA (base material S side). After the pressure in the process chamber 50 is stabilized, a preset electric power is supplied to the target T2 to turn Ar gas into plasma. Then, a seed film is formed on the adhesive film.

(Example 1-2)
The procedure is the same as that of the first embodiment except for the first step of step 102 and the third step of step 104.
The first step of step 102 or the third step of step 104 is also possible with the target T1. In this case, the holding body holding the plurality of targets and the ion gun is rotated to direct the target T1 to a side other than the film formation region FFA (the side not facing the base material S). After the pressure in the process chamber 50 is stabilized, a preset electric power is supplied to the target T1 to turn Ar gas into plasma. Then, it is possible to deposit the getter effect is greater substance to gas or water remaining on the inner wall of the process chamber 50 other than the film formation region FFA (H 2 _O).

(Example 1-3)
The procedure is the same as that of the first embodiment except for the first step of step 102 and the third step of step 104.
In the first step of step 102 or the third step of step 104, the above-mentioned method using the ion gun I1 and the method using the target T1 may be used in combination. Deposition region FFA to gas or water (H 2 _O) remaining on the inner wall of the process chamber 50 of the inner wall and the film forming region FFA process chamber 50 (substrate S opposite to the side) of the (substrate S opposite to the side) A material with a large getter effect can be attached.

The control program is stored in the ROM 1002 (also referred to as “storage unit”) of the control device of FIG. The control program will be described using the film forming apparatus of FIG. 1, the control apparatus of FIG. 2, and the film forming method of FIG.
Control program, the process chamber 50, a first step of forming a getter-effective materials to gases or water remaining in the process chamber (H 2 _O) (step 102), after the first step (step 102 predetermined time), and a second step of evacuating the process chamber (step 103), after the second step (step 103), the getter process chamber 50 for gas or water remaining in the process chamber _(H 2 O) A third step (step 104) for forming a highly effective substance, a fourth step (step 105) for exhausting the process chamber 50 for a predetermined time after the third step (step 104), and a fourth step (step 105). 105), including an adhesive film forming step of forming an adhesive film on the base material S provided in the process chamber 50, the first step or (step 102) sets the time of the third step (step 104) to P1. When the total time of the first step (step 102) and the second step (step 103) or the total time of the third step (step 104) and the fourth step (step 105) is P, the duty ratio D = P1 / The exhaust unit V50 and the gas introduction unit G1 are controlled so that P is 34% or more and 66% or less.

Hereinafter, specific operation examples (Example 1-1, Example 1-2, and Example 1-3) of the film forming apparatus of the first embodiment will be described with reference to FIGS. 4 to 8.

(Example 1-1)
First, as schematically shown in FIG. 4, in order to form a film on the surface of the base material S, the base material S is conveyed into the process chamber 50 by a transfer mechanism (not shown) and transferred to the holding portion 60. Holds the base material S.

Then, as schematically shown in FIG. 4 (corresponding to step 101 in FIG. 3), the retainer holding the plurality of targets and the ion gun is rotated to place the ion gun I1 in the film formation region FFA (base material S). Facing the side). After the pressure in the process chamber 50 is stabilized from the gas introduction unit G1, a voltage is applied to the ion gun I1 to turn Ar gas into plasma. Then, the base material S is etched. Thereby, the surface of the substrate S is, for example, flattened, roughened, cleaned and / or activated. When the etching step is completed, the voltage application to the ion gun I1 is stopped.

Then, as schematically shown in FIG. 5 (corresponding to step 102 in FIG. 3), the retainer holding the plurality of targets and the ion gun is rotated to move the ion gun I1 to a region other than the film formation region FFA (base material). Turn to the side that does not face S). After the pressure in the process chamber 50 is stabilized from the gas introduction unit G1, a voltage is applied to the ion gun I1 to turn Ar gas into plasma. A protective plate MS1 is installed as a getter material supply source MS1 on the inner wall of the chamber of the process chamber 50 other than the film formation region FFA. In this state, a voltage is applied to the ion gun I1 to turn Ar gas into plasma. , deposition preventing plate MS1 is sputtered, to deposit the getter-effective substances on the inner wall of the process chamber 50 to the residual gas or water (H 2 _O) deposition region FFA (substrate S opposite to the side) be able to.
The Ar gas supplied to the process chamber 50 is supplied into the process chamber 50 at the same time as the start of the first step (step 102 in FIG. 3) by using the gas introduction unit G1, and the first step is completed. At the same time, it is desirable to stop the supply to the process chamber.
Further, it is desirable that the exhaust in the process chamber 50 is started before or at the same time as the start of the first step (step 102 in FIG. 3) by using the exhaust unit V50.
Further, the electric power supplied to the process chamber 50 is supplied to the process chamber at the same time as the start of the first step by using the power supply (SP) or the power supply (IG) shown in FIG. 2, and the first step is completed. At the same time, it is desirable to stop the supply to the process chamber.

After forming a substance having a large getter effect on the inner wall surface of the process chamber 50, the process is performed for a predetermined time using the exhaust section V50 in a state where the supply of Ar gas from the gas introduction section G1 to the inside of the process chamber 50 is stopped. Exhaust the chamber 50 (corresponding to step 103 in FIG. 3).
As a result, the first getter process (corresponding to

steps

102 and 103 in FIG. 3) is completed.

When the second getter process (third step: step 104 and fourth step: step 105 in FIG. 3) is started, it is schematically shown in FIG. 5 (corresponding to step 104 in FIG. 3). As described above, after the pressure in the process chamber 50 is stabilized from the gas introduction unit G1, a voltage is applied to the ion gun I1 to turn Ar gas into plasma. A protective plate MS1 is installed as a getter material supply source MS1 on the inner wall of the chamber of the process chamber 50 other than the film formation region FFA. In this state, a voltage is applied to the ion gun I1 to turn Ar gas into plasma. , deposition preventing plate MS1 is sputtered, to deposit the getter-effective substances on the inner wall of the process chamber 50 to the residual gas or water (H 2 _O) deposition region FFA (substrate S opposite to the side) be able to.
The Ar gas supplied to the process chamber 50 is supplied into the process chamber 50 at the same time as the start of the third step (step 104 in FIG. 3) by using the gas introduction unit G1, and the third step is completed. At the same time, it is desirable to stop the supply to the process chamber.
Further, the electric power supplied to the process chamber 50 is supplied to the process chamber at the same time as the start of the third step by using the power supply (SP) or the power supply (IG) shown in FIG. 2, and the third step is completed. At the same time, it is desirable to stop the supply to the process chamber.

After forming a substance having a large getter effect on the inner wall surface of the process chamber 50, the process is performed for a predetermined time using the exhaust section V50 in a state where the supply of Ar gas from the gas introduction section G1 to the inside of the process chamber 50 is stopped. Exhaust the chamber 50 (corresponding to step 105 in FIG. 3).
As a result, the second getter process (corresponding to

steps

104 and 105 in FIG. 3) is completed, and the “getter process” in FIG. 3 is completed.

Then, as schematically shown in FIG. 7 (corresponding to step 107 in FIG. 3), the retainer holding the plurality of targets and the ion gun is rotated to set the target T1 in the film formation region (with the base material S). Turn to the opposite side). After the pressure in the process chamber 50 is stabilized, a preset electric power is supplied to the target T1 to turn Ar gas into plasma. Then, an adhesive film can be formed on the base material S.

Then, as schematically shown in FIG. 8 (corresponding to step 108 in FIG. 3), the retainer holding the plurality of targets and the ion gun is rotated to set the target T2 in the film formation region (with the base material S). Turn to the opposite side). After the pressure in the process chamber 50 is stabilized, a preset electric power is supplied to the target T2 to turn Ar gas into plasma. Then, a seed film can be formed on the base material S.

(Example 1-2)
The first step of step 102 or the third step of step 104 shown in FIG. 3 can also be performed with the target T1. In this case, as schematically shown in FIG. 6 (corresponding to step 102 or step 104 in FIG. 3), the retainer holding the plurality of targets and the ion gun is rotated to form the target T1. It faces the area other than the FFA (the side that does not face the base material S). After the pressure in the process chamber 50 is stabilized, a preset electric power is supplied to the target T1 to turn Ar gas into plasma. Then, it is possible to deposit the getter effect is greater substance to gas or water remaining on the inner wall of the process chamber 50 other than the film formation region FFA (H 2 _O).

(Example 1-3)
Further, in the first step of step 102 or the third step of step 104 shown in FIG. 3, the above-mentioned method using the ion gun I1 and the method using the target T1 may be used in combination. In this case, as shown in FIG. 5, the ion gun I1 is directed to a side other than the film formation region FFA (the side not facing the base material S). At this time, the target T1 is located at a position facing the side wall of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion gun I1 to supply a preset electric power to the target T1 to turn Ar gas into plasma. _{Gas or water (H 2} O) remaining on the side wall of the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S) and the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S). A material having a large getter effect can be attached to the material.
Further, the method of using the above-mentioned method using the ion gun I1 and the method using the target T1 in combination is also possible in the case of FIG. In this case, as schematically shown in FIG. 6 (corresponding to step 102 or step 104 in FIG. 3), the retainer holding the plurality of targets and the ion gun is rotated to form the target T1. It faces the area other than the FFA (the side that does not face the base material S). In this case, the ion gun I1 is located at a position facing the side wall of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion gun I1 to supply a preset electric power to the target T1 to turn Ar gas into plasma. _{Gas or water (H 2} O) remaining on the side wall of the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S) and the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S). A material having a large getter effect can be attached to the material.
Further, the method of using the above-mentioned method using the ion gun I1 and the method using the target T1 in combination can also be used in combination with the case of FIG. 5 and the case of FIG.
In this case, as shown in FIG. 5, the ion gun I1 is directed to a side other than the film formation region FFA (the side not facing the base material S). In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion gun I1 to turn Ar gas into plasma. _{Gas or water (H 2} O) remaining on the side wall of the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S) and the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S). A material having a large getter effect is attached to the material.
At this time, the ion gun I1 sputters the protective plate MS1 formed on the upper inner wall of the process chamber 50.
In this state, as shown in FIG. 6, when the holding body holding the plurality of targets and the ion gun is rotated and the target T1 is directed to other than the film formation region FFA (the side not facing the base material S), The target T1 faces the upper inner wall of the process chamber 50. After the pressure in the process chamber 50 is stabilized, a preset electric power is supplied to the target T1 to turn Ar gas into plasma. As a result, a substance having a large getter effect can be formed on the protective plate MS1 formed on the upper inner wall of the process chamber 50, which is sputtered by the ion gun I1.

(Second Embodiment)
Hereinafter, the film forming apparatus of the second embodiment of the present invention, the control apparatus of the film forming apparatus, and the film forming method will be described with reference to the accompanying drawings through Examples 1-1 to 3-3.

FIG. 9 is a schematic cross-sectional view of the film forming apparatus according to the embodiment of the present invention cut along a plane parallel to a horizontal plane. The film forming apparatus 1 of FIG. 9 is a platform 10 that can be used for transferring the base material S between the process chamber 50 and an apparatus other than the film forming apparatus, and an untreated platform 10 provided by the platform 10. It is composed of a base material S and a load lock chamber 30 that can be used for delivering the base material S after film formation provided from the process chamber 50.
The basic configuration of the process chamber 50 of the second embodiment is the same as the basic configuration of the process chamber of the first embodiment, but the processing unit FF is composed of the first processing unit FF1 and the second processing unit FF2. , It is different from the basic configuration of the process room of the first embodiment.
The first major aspect of the film deposition apparatus of FIG. 9, the inner wall surface of the process chamber 50, gas or water (H 2 _O) getter effect is larger than the material remaining in the process chamber 50 (e.g., Ti film ) Is installed and functions as a getter material supply source MS. The getter material supply source MS is composed of a first getter material supply source MS1 of the first processing unit FF1 and a second getter material supply source MS2 of the second processing unit FF2. Is different.
Here, the XY plane is a plane parallel to the horizontal plane, and the Z axis is an axis parallel to the vertical direction. The film forming apparatus is configured as an apparatus for forming a film on the base material S. The base material S can be transported and processed while being held by the carrier CR, for example.

The film forming apparatus shown in this embodiment is a plasma processing apparatus capable of performing a plurality of types of processing in one processing chamber. A plasma processing apparatus capable of performing multiple types of processing in one processing chamber does not require a different processing chamber for each processing, so that the area occupied by the entire apparatus can be reduced, which is advantageous in saving space in the apparatus. Is. In the present embodiment, the processing is switched by rotating the support that holds the plurality of targets and the ion gun.

The film forming apparatus has a platform 10 and a load lock chamber 30 provided with a heating mechanism, in addition to a process chamber 50 for performing a process of forming a film on the base material S. The platform 10 is used to transfer the base material S to and from other devices. The load lock chamber 30 is provided with an exhaust unit V30 capable of evacuating the inside of the load lock chamber 30, and the process chamber 50 is provided with an exhaust unit V50 capable of evacuating the inside of the process chamber 50. The exhaust unit V30 and the exhaust unit V50 are vacuum pumps such as a dry pump and a turbo molecular pump. A gate valve 20 is provided between the platform 10 and the load lock chamber 30, and a gate valve 40 is provided between the load lock chamber 30 and the process chamber 50. The base material S is conveyed while being held by the carrier CR. A transport device for transporting the carrier CR is incorporated in the load lock chamber 30 and the process chamber 50.

The transport device of the load lock chamber 30 is a carrier CR on which the untreated base material S provided from the platform 10 is installed and a carrier on which the base material S after the film provided from the process chamber 50 is formed. It has a mechanism to operate the CR. The operation mechanism 72 drives, for example, a container capable of holding a plurality of base materials S along the X axis. The base material S is transported between the platform 10 and the load lock chamber 30 by a transport mechanism (not shown). The carrier CR is transported between the load lock chamber 30 and the process chamber 50 by the transport mechanism 74.

The transfer device of the process chamber 50 includes a transfer mechanism for transferring the carrier CR conveyed from the load lock chamber 30 to the holding unit 60 in the process chamber 50, and a holding unit for holding the carrier CR in the process chamber 50. It has 60. The holding portion 60 has a first chuck CH1 and a second chuck CH2 arranged on opposite sides of each other. The first chuck CH1 and the second chuck CH2 may include, for example, an electrostatic chuck or a mechanical chuck. The film forming apparatus shown in FIG. 9 includes a driving unit that moves the holding portion 60 holding the carrier CR along the moving path TP so that the base material S passes through the film forming region FFA in the process chamber 50. .. The drive unit may employ, for example, a linear motor or a ball screw mechanism. The movement path TP is, for example, parallel to the surface to be treated of the base material S.

The base material S may be, for example, a Si substrate, a glass or resin square member, or a resin film fixed to a support. As the resin square member, for example, a glass epoxy base material or a build-up substrate can be used. As the resin film, for example, a polyimide film can be used. Further, as the base material S, a laminate of a polyimide-based, epoxy-based, phenol-based, or polybenzoxazole-based resin which is an interlayer insulating film can be used. Here, the base material S, which is a laminate with the resin, may have a wiring layer formed therein, or may be a laminate in which the resin is coated on the base material without forming the wiring. However, the shape and material of the base material S are not limited to specific ones.

In the film forming apparatus shown in FIG. 9, a material having a large getter effect (for example, Ti film) is attached _{to the gas or water (H 2} O) remaining on the inner wall of the chamber with the plasma source directed to other than the film forming region FFA. The processing unit FF may be provided with a step of causing the substrate S to be formed and a step of performing an etching treatment and a step of forming a film on the base material S passing through the film forming region FFA. Here, the film-forming region FFA is a region where an etching process and a film are formed on the base material S.

The processing unit FF is used as a base material during a step of adhering a material having a large getter effect (for example, Ti film) to _{gas or water (H 2} O) remaining on the inner wall other than the film formation region FFA of the process chamber 50. It can be configured so that the material does not adhere to S. Further, the processing unit FF is based on when the base material S is moving in the first direction along the movement path TP and in the second direction which is opposite to the first direction along the movement path TP. Both when the material S is in motion, it can be configured to be etched and film formed on the substrate S. The processing unit FF is arranged so that the etching treatment and the film are simultaneously formed on the two carriers held by the holding unit 60 so that the surfaces to be processed of the base material S face opposite to each other, and the film is formed on the first carrier. The first processing unit FF1 to be formed and the second processing unit FF2 forming a film on the second carrier may be included. The film formation region FFA may be arranged between the first processing unit FF1 and the second processing unit FF2. The first processing unit FF1 and the second processing unit FF2 are provided by the separation unit SP provided in the holding unit 60 so that the base material S does not face each other when the base material S moves to perform the etching process and the film is formed. The space on the side of the first processing unit FF1 and the space on the side of the second processing unit FF2 are separated.

Further, the processing unit FF is a getter material supply source MS for adhering a material having a large getter effect (for example, Ti film) to _{gas or water (H 2} O) remaining on the inner wall of the chamber other than the film formation region FFA. And the plasma generation part that generates plasma for adhering the material (for example, Ti film) to the inner wall of the chamber other than the film formation area FFA, and the plasma generation that generates plasma for etching treatment and film formation in the film formation area FFA. Can include parts. For example, the processing unit FF may be composed of a rotating cathode that rotates a support that holds a plurality of targets and an ion gun, but this is only an example. The processing unit FF may have another configuration.

The first processing unit, a target T1, the target T2, the ion gun I1, gas or water _(H 2 O) getter effect is larger than the material remaining on the inner wall of the chamber other than the film formation region FFA (e.g. Ti film ) May be provided as a getter material source MS1 for adhering. For example, the getter material supply source MS1 for adhering a material having a large getter effect (for example, a Ti film) to the inner wall of the chamber other than the film formation region FFA has a Ti-made adhesive plate, a Ti target, or a Ti film formed on the getter material supply source MS1. It may be composed of a protective plate other than Ti.

The second processing unit similarly, the target T3, the target T4, and ion gun I2, gas remaining in the inner wall of the chamber other than the film formation region FFA or water (H 2 _O) getter effect with respect to material having a large (e.g. A getter material source MS2 for adhering the Ti film) may be provided. For example, the getter material supply source MS2 for adhering a material having a large getter effect (for example, a Ti film) to the inner wall of the chamber other than the film formation region FFA may be composed of a Ti-made adhesive plate or a Ti target.

The holding unit 60 includes a cooling unit that cools the holding unit 60. By cooling the holding portion 60, the base material S held by the holding portion 60 is cooled, and for example, deformation of the base material S can be suppressed.

The procedure for processing the base material S in the film forming apparatus is shown below. In the following, the base materials S1, S2, S3, and S4 are described in order to distinguish the base materials S from each other. First, on the platform 10, the base material S1 and the base material S2 are installed on the first carrier and the second carrier, respectively. The first carrier on which the base material S1 is installed and the second carrier on which the base material S2 is installed move to the load lock chamber 30, respectively, and the load lock chamber 30 is evacuated by the exhaust unit V30. When the heat treatment is performed in the load lock chamber 30, the base material S is heat-treated by the lamp heater when the pressure in the load lock chamber 30 becomes equal to or lower than a predetermined pressure. Here, in order to simultaneously process the base material S1 installed on the first carrier and the base material S2 installed on the second carrier, the base materials S1 installed on the first carrier and the base material S2 installed on the second carrier were installed. The surface to be treated of the base material S2 has a surface to be treated facing opposite sides, the surface to be treated of the base material S1 is facing the + X direction, and the surface to be treated of the base material S2 is facing the −X direction. It shall be the surface that was there.

Next, the operation mechanism 72 of the load lock chamber 30 prepares for transportation to the process chamber 50, and the first carrier is moved to the process chamber 50 and transferred to the holding unit 60 provided in the process chamber 50. The same operation is performed for the second carrier. Here, in the holding portion 60 provided in the process chamber 50, the two carrier CRs have a surface to be treated in which the surfaces to be treated of the base material S installed in each carrier CR face opposite to each other. Then, the surface to be treated of the base material S1 is held so as to face the surface facing the + X direction, and the surface to be treated of the base material S2 is held so as to face the surface facing the −X direction. The first carrier and the second carrier move along the movement path TP while being held by the holding portion 60 of the process chamber 50 so that the surfaces to be processed face opposite to each other, and move along the movement path TP. By passing through the film formation region FFA inside, two carriers are simultaneously etched and a film is formed.

When the first carrier and the second carrier are arranged in the process chamber 50, the venting operation of the load lock chamber 30, the installation of the base material S3 and the base material S4 on the third carrier and the fourth carrier on the platform 10, the base. The third carrier and the fourth carrier on which the material S3 and the base material S4 are installed are moved to the load lock chamber 30, and the exhaust unit V30 sequentially exhausts the load lock chamber 30 in vacuum. When the heat treatment is performed in the load lock chamber 30, the base material S is heat-treated by the lamp heater when the pressure in the load lock chamber 30 becomes equal to or lower than a predetermined pressure.

After the etching treatment and film formation in the process chambers 50 of the first carrier and the second carrier are performed, the load lock chamber 30 prepares for transportation by the operation mechanism 72. After the transfer preparation operation is completed, the first carrier is transferred from the holding unit 60 provided in the process chamber 50 to the transfer mechanism 74, and the first carrier is moved to the load lock chamber 30. After the first carrier that has been etched and the film formed in the process chamber 50 is discharged to the load lock chamber 30, the operation mechanism 72 of the load lock chamber 30 prepares for transporting the third carrier to the process chamber 50. conduct. After that, the third carrier is moved to the process chamber 50. After moving the third carrier to the process chamber 50, the second carrier is moved to the load lock chamber 30 by the same operation as the first carrier. After moving the second carrier from the process chamber 50 to the load lock chamber 30, the fourth carrier is moved to the process chamber 50 by the same operation as the second carrier. After moving the third carrier and the fourth carrier to the process chamber 50, the gate valve 40 is closed. After closing the gate valve 40, in the load lock chamber 30, the load lock chamber 30 is vented, the first carrier and the second carrier are moved to the platform 10, respectively, and the base material S1 and the base material S2 are removed from the respective carrier CRs. .. At the same time, in the process chamber 50, the third carrier and the fourth carrier are transferred to the holding portion 60, and the etching process and the film formation are performed.

When the third carrier and the fourth carrier are arranged in the process chamber 50, the venting operation of the load lock chamber 30, the installation of the base material S5 and the base material S6 on the first carrier and the second carrier on the platform 10, the base. The first carrier and the second carrier on which the material S5 and the base material S6 are installed are moved to the load lock chamber 30, and the vacuum exhaust of the load lock chamber 30 is sequentially performed by the exhaust unit V30. When the heat treatment is performed in the load lock chamber 30, the base material S is heat-treated by the lamp heater when the pressure in the load lock chamber 30 becomes equal to or lower than a predetermined pressure.

After the etching treatment and film formation in the process chambers 50 of the third carrier and the fourth carrier are performed, the load lock chamber 30 prepares for transportation by the operation mechanism 72. After the transfer preparation operation is completed, the third carrier is transferred from the holding unit 60 provided in the process chamber 50 to the transfer mechanism 74, and the third carrier is moved to the load lock chamber 30. The same operation is performed for the fourth carrier. After the carriers that have been etched and formed into a film in the process chamber 50 are discharged to the load lock chamber 30, the operation mechanism 72 of the load lock chamber 30 prepares for transporting the first carrier to the process chamber 50. After that, the first carrier is moved to the process chamber 50. The same operation is performed for the second carrier. After closing the gate valve 40, in the load lock chamber 30, the load lock chamber 30 is vented, the third carrier and the fourth carrier are moved to the platform 10, respectively, and the base material S3 and the base material S4 are removed from the respective carriers. .. At the same time, in the process chamber 50, the first carrier and the second carrier are transferred to the holding portion 60, and the base material S5 mounted on the first carrier and the base material S6 mounted on the second carrier are etched and filmed. Is formed. Continuous processing is performed by repeating the above operation.

FIG. 10 is a block diagram showing a schematic configuration of a control system of a load lock chamber and a process chamber in the film forming apparatus 1 of the second embodiment of the present invention. The difference between the control system of the first embodiment of FIG. 11 and the control system of FIG. 2 is that the control device 1000 includes a control unit as a control means for controlling the load lock chamber 10 of the film forming device 1. Is

In FIG. 10, the control device 1000 is a control unit as a control means for controlling the load lock chamber 10 and the process chamber 50 of the film forming apparatus 1. The control device 1000 includes a CPU 1001 that executes processing operations such as various calculations, controls, and discriminations, and a control program such as processing that is executed by the CPU 1001 and is described later in FIGS. 11 to 13 and 15 to 16. It has a ROM 1002 (also referred to as a "storage unit") for storing the above. Further, the control device 1000 has a RAM 1003 for temporarily storing data during the processing operation of the CPU 1001, input data, and the like, a non-volatile memory 1004, and the like. Further, the control device 1000 includes an input operation unit 1005 including a keyboard for inputting predetermined commands or data, various switches, and a display unit for displaying various displays such as an input / setting state of the film forming apparatus 1. 1006 is connected. Further, the control device 1000 includes a power supply 1018 for the load lock chamber 30, a gas introduction system 1019, a substrate holder drive mechanism 1020, a pressure measuring instrument 1021, a power supply (SP) 1022 for the sputtering cathode of the process chamber 50, and a power supply for the ion gun. (IG) 1023, gas introduction system 1024, substrate holder drive mechanism 1025, pressure measuring device 1026, holder transfer mechanism 1027, cathode rotation mechanism 1028, exhaust unit V50: 1030, etc. are via drive circuits 1007 to 1017, 1029, respectively. It is connected.

A control program is stored in the ROM 1002 (also referred to as a “storage unit”).
Control program, the process chamber 50, a first step of forming a getter-effective substances against residual gas or water (H 2 _O) in the process chamber (step 102 in FIG. 2), after the first step The second step (step 103 of FIG. 2) of exhausting the process chamber for a predetermined time in (step 102 of FIG. 2) and after the second step (step 103 of FIG. 2) remain in the process chamber 50 in the process chamber 50. a third step of forming a getter-effective materials to gases or water _(H 2 O) (step 104 in FIG. 2), a predetermined time after the third step (step 104 in FIG. 2), the process chamber 50 4th step (step 105 in FIG. 2) and after the 4th step (step 105 in FIG. 2), an adhesive film forming step of forming an adhesive film on the base material S provided in the process chamber 50. (Step 107 in FIG. 2), and the first step or (step 102 in FIG. 2) sets the time of the third step (step 104 in FIG. 2) to P1 and the time in the first step (step 102 in FIG. 2). When the total time of the second step (step 103 of FIG. 2) or the total time of the third step (step 104 of FIG. 2) and the fourth step (step 105 of FIG. 2) is P, the duty ratio D = P1 /. The exhaust unit V50 and the gas introduction unit G1 are controlled so that P is 34% or more and 66% or less.

(Example 1-1)
FIG. 11 is a diagram showing a flow of a film forming method of Example 1-1, Example 1-2, and Example 1-3 when the film forming apparatus of the second embodiment is used. Hereinafter, each step will be described with reference to this flowchart. The basic configuration of the getter step 33 is the same as the film forming method when the film forming apparatus of the first embodiment of FIG. 2 is used. That is, the getter step 33 of FIG. 11 is composed of steps 102 to 105 of the film forming method of FIG.
The difference between the film forming method of Example 1-1 in FIG. 11 and the film forming method of FIG. 2 is that carrier transfer: step 31, target cleaning step for adhesive film: step 34: target cleaning step for seed film: step. 36, Carrier discharge step: Step 38 has been added.

In step 31, the carrier CR is transferred to the holding unit 60 in the process chamber 50.

In step 32, an etching step is performed. The holding body holding the plurality of targets and the ion gun is rotated to direct the ion guns I1 and I2 toward the film formation region FFA (the side facing the base material S). After the pressure in the process chamber 50 is stabilized from the gas introduction unit G1, a voltage is applied to the ion guns I1 and I2 to turn Ar gas into plasma. Then, in order to perform the etching process, the carrier is started to be conveyed toward the film forming region FFA, and the base material S is etched by passing the carrier through the film forming region FFA a predetermined number of times at a preset transfer speed. .. When the etching step is completed, the voltage application to the ion guns I1 and I2 is stopped. In the present embodiment, Ar gas is used as the introduction gas, but the present invention is not limited to this, and reactive gases such as nitrogen, oxygen, and hydrogen can also be used.

In step 33, a getter step is performed. The holding body holding the plurality of targets and the ion gun is rotated so that the ion guns I1 and I2 are directed to other than the film formation region FFA (the side not facing the substrate S). The inner wall of the chamber of the process chamber 50 other than the film formation region FFA, as a getter material supply source MS, gas remaining in the inner wall of the chamber of the process chamber 50 or water (H 2 _O) getter effect with respect to material having a large (e.g. A protective plate made of (Ti film) is installed. In this state, when a voltage is applied to the ion guns I1 and I2 to turn Ar gas into plasma, the protective plate is sputtered and other than the film formation region FFA. The material (for example, Ti film) can be attached to the inner wall of the chamber and the magnetic poles of the ion guns I1 and I2. In this "getter step", the getter process (step 102 and step 103 in FIG. 3 or step 104 and step 105 in FIG. 3) in which the sputtering of the adhesive plate MS and the exhaust after the sputtering are performed as a series of operations is repeated two or more times. because, it is desirable that the pressure or water (H 2 _O) partial pressure of the process chamber 50 is continued until the predetermined pressure or less. Here, when the reactive gas is used in the getter step of step 33, the introduction of the reactive gas is stopped before the start of step 34.

In step 34, a cleaning step of the target used for forming the adhesive film is performed. The process chamber 50 is rotated so that the holding body holding the plurality of targets and the ion gun is directed so that the targets T1 and T3 (for example, all Ti targets) are directed to other than the film formation region FFA (the side facing the base material S). After the pressure is stabilized, electric power is applied to the targets T1 and T3 to turn Ar gas into plasma, and the targets T1 and T3 are cleaned for a predetermined time with a preset power.

In step 35, an adhesive film forming step is performed. The retainer holding the plurality of targets and the ion gun is rotated to direct the targets T1 and T3 (for example, all Ti targets) toward the film formation region FFA (the side facing the base material S). After the pressure in the process chamber 50 is stabilized, preset electric power is supplied to the targets T1 and T3 (for example, both Ti targets) to turn Ar gas into plasma. Then, in order to form an adhesive film (for example, Ti film) on the base material S, the carrier is started to be transferred toward the film forming region FFA, and the film is formed a specified number of times at a preset transfer speed. By passing the region FFA, an adhesive film (for example, Ti film) is formed on the base material S.

In step 36, a cleaning step of the target used for forming the seed film is performed. By rotating the retainer that holds the plurality of targets and the ion gun, the targets T2 and T4 (for example, all Cu targets) are directed to other than the film formation region FFA (the side that does not face the base material S) in the process chamber 50. After the pressure stabilizes, power is applied to the targets T2 and T4 (for example, both Cu targets) to turn Ar gas into plasma, and the targets T2 and T4 (for example, both Cu targets) are converted to plasma at a predetermined time with a preset power. Clean the target).

In step 37, a seed film forming step is performed. The retainer holding the plurality of targets and the ion gun is rotated to direct the targets T2 and T4 (for example, all Cu targets) toward the film formation region FFA (the side facing the base material S). After the pressure in the process chamber 50 is stabilized, preset electric power is supplied to the targets T2 and T4 (for example, both Cu targets) to turn Ar gas into plasma. Then, in order to form a seed film (for example, Cu film) on the adhesion film (for example, Ti film), carrier transfer is started toward the film formation region FFA, and the carrier is designated at a preset transfer speed. A seed film (for example, Cu film) is formed on the adhesive film (for example, Ti film) formed on the base material S by passing the film formation region FFA for the number of times.

In step 38, the carrier is removed from the holding portion 60 in the process chamber 50, and the carrier CR is discharged from the process chamber 50.

According to the present embodiment 1-1, by providing the getter material supply source MS separately from the cathode for film formation, it is not necessary to install a target as a getter material supply source on the rotating cathode, and the number of sputtered film types is limited. The getter process can be carried out without being carried out. Further, in addition to the range in which a material having a large getter effect (for example, Ti film) is attached to the inner wall of the chamber by ion beam sputtering, the adhesion plate MS (for example, Ti) which is the getter material supply source MS is activated by ion beam irradiation. When it is converted, it acts as an adsorption surface for gas molecules. Therefore, the area of the adsorption surface on which the gas molecules are adsorbed becomes large, and a high getter effect can be obtained. Furthermore, in the getter process, by performing the getter process multiple times, the surface on which gas molecules are adsorbed can be activated for each getter process, so that the adsorption effect is promoted and the Ar gas is stopped when the supply of Ar gas is stopped. water (H 2 _O) cleaning of the process chamber 50 so the gas is also exhausted quickly is promoted with.
Further, according to this embodiment 1-1, a pressure or quadrupole mass spectrometer RGA process chamber 50 within the process chamber 50 of water (H 2 _O) partial pressure by constantly measuring the predetermined Since the getter process can be continued until the pressure becomes lower than the pressure, the atmosphere in the process chamber 50 at the time of forming the adhesive film can be stabilized.

(Example 1-2)
Next, the film forming method of Example 1-2, which is a modification of Example 1-1, will be described with reference to the flowchart of the film forming method of Example 1-1 of FIG. The difference between the film forming method of Example 1-2 and the film forming method of Example 1-1 is step 33. The basic configuration of the getter step 33 is the same as the film forming method of FIG. That is, the getter step 33 of FIG. 11 is composed of steps 102 to 105 of the film forming method of FIG. The getter process is composed of step 102 and step 103 or step 104 and step 105 of the film forming method shown in FIG.
Hereinafter, step 33 will be described with reference to the flowchart of FIG. 11 and FIG. Since each step of step 31, step 32, and steps 34 to 38 is the same as each step of Example 1-1, the description thereof will be omitted.

Step 33 of Example 1-2: In the getter step, as shown in FIG. 6, the holding body holding the plurality of targets and the ion gun is rotated so that the targets T1 and T3 are placed on the target T1 and T3 other than the film formation region FFA (opposing the base material S). Turn to the side that does not). After the pressure in the process chamber 50 is stabilized, preset electric power is supplied to the targets T1 and T3 to turn Ar gas into plasma. Then, it is possible to deposit the getter effect is greater substance to gas or water remaining on the inner wall of the process chamber 50 other than the film formation region FFA (H 2 _O).

(Example 1-3)
Next, the film forming method of Example 1-3, which is a modification of Example 1-1, will be described with reference to the flowchart of the film forming method of Example 1-1 of FIG. The difference between the film forming method of Example 1-3 and the film forming method of Example 1-1 is step 33. The basic configuration of the getter step 33 is the same as the film forming method of FIG. That is, the getter step 33 of FIG. 11 is composed of steps 102 to 105 of the film forming method of FIG. The getter process is composed of step 102 and step 103 or step 104 and step 105 of the film forming method shown in FIG.
Hereinafter, step 33 will be described with reference to the flowchart of FIG. 11 and FIG. Since each step of step 31, step 32, and steps 34 to 38 is the same as each step of Example 1-1, the description thereof will be omitted.

Step 33 of Example 1-3: In the getter step, the above-mentioned method using the ion guns I1 and I2 and the method using the targets T1 and T3 are used in combination. In this case, as shown in FIG. 5, the ion guns I1 and I2 are directed to other than the film formation region FFA (the side not facing the base material S). At this time, the targets T1 and T3 are positioned so as to face the side wall of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion guns I1 and I2, and preset electric power is supplied to the targets T1 and T3 to turn Ar gas into plasma. _{Gas or water (H 2} O) remaining on the side wall of the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S) and the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S). A material having a large getter effect can be attached to the material.
Further, the method of using the above-mentioned method using the ion guns I1 and I2 and the method using the targets T1 and T3 in combination is also possible in the case of FIG. In this case, as shown in FIG. 6, the holding body holding the plurality of targets and the ion gun is rotated to direct the targets T1 and T3 to other than the film formation region FFA (the side not facing the base material S). In this case, the ion guns I1 and I2 are positioned so as to face the side wall of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion guns I1 and I2, and preset electric power is supplied to the targets T1 and T3 to turn Ar gas into plasma. _{Gas or water (H 2} O) remaining on the side wall of the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S) and the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S). A material having a large getter effect can be attached to the material.
Further, the method of using the above-mentioned methods using the ion guns I1 and I2 and the method using the targets T1 and T3 in combination can also be used in combination with the case of FIG. 5 and the case of FIG.
In this case, as shown in FIG. 5, the ion guns I1 and I2 are directed to other than the film formation region FFA (the side not facing the base material S). In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion guns I1 and I2 to turn Ar gas into plasma. _{Gas or water (H 2} O) remaining on the side wall of the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S) and the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S). A material having a large getter effect is attached to the material.
At this time, the ion guns I1 and I2 sputter the protective plates MS1 and MS2 formed on the upper inner wall of the process chamber 50.
In this state, as shown in FIG. 6, the retainer holding the plurality of targets and the ion gun is rotated to direct the targets T1 and T3 to other than the film formation region FFA (the side not facing the base material S). Then, the targets T1 and T3 are in a state of facing the upper inner wall of the process chamber 50. After the pressure in the process chamber 50 is stabilized, preset electric power is supplied to the targets T1 and T3 to turn Ar gas into plasma. As a result, a substance having a large getter effect can be formed on the protective plates MS1 and MS2 formed on the upper inner wall of the process chamber 50, which are sputtered by the ion guns I1 and I2.

(Example 2-1)
In Example 1-1 of FIG. 11 described above, an example in which the getter step is performed between the etching step and the adhesion film forming step has been described, but the getter step may be performed before the etching step. An example in which the getter step is performed before the etching step will be described below as Example 2-1. FIG. 12 is a flowchart showing a processing procedure of the film forming method of Example 2-1 and Example 2-2 and Example 2-3. The basic configuration of the getter process and the getter process 42 is the same as the film forming method of FIG. That is, the getter step 42 of FIG. 6 is composed of steps 102 to 105 of the film forming method of FIG. The getter process is composed of step 102 and step 103 or step 104 and step 105 of the film forming method shown in FIG.

In step 41, the carrier CR is transferred to the holding unit 60 in the process chamber 50.

In step 42, a getter step is performed. The holding body holding the plurality of targets and the ion gun is rotated to direct the ion guns I1 and I2 to other than the film formation region FFA. A protective plate (for example, made of Ti) is installed as a getter material supply source MS on the inner wall of the chamber of the process chamber 50 other than the film forming region FFA, and in this state, a voltage is applied to the ion guns I1 and I2. When Ar gas is turned into plasma, the adhesive plate (for example, made of Ti) is sputtered, and a material having a large getter effect (for example, Ti film) can be attached to the inner wall of the chamber other than the film formation region FFA and the magnetic pole of the ion gun. can. The "getter process", the getter process is an exhaust after sputtering and the sputtering of the Ti deposition preventing plate and a series of operations, since the operation is repeated two or more times, the pressure in the process chamber 50 or H _{2 O} content It is desirable to continue until the pressure drops below a predetermined pressure.

In step 43, an etching step is performed. The retainer holding the plurality of targets and the ion gun is rotated to direct the ion guns I1 and I2 toward the film formation region FFA. After the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion guns I1 and I2 to turn Ar gas into plasma. Then, in order to perform the etching process, the carrier CR is started to be conveyed toward the film forming region FFA, and the film forming region FFA (the side facing the base material S) is subjected to a predetermined number of times at a preset transfer speed. The base material S is etched by passing it through. When the etching step is completed, the voltage application to the ion guns I1 and I2 is stopped. In the present embodiment, Ar gas is used as the gas introduced from the gas introduction unit G1, but the present invention is not limited to this, and reactive gases such as nitrogen, oxygen, and hydrogen can also be used.

In step 44, a cleaning step of the target used for forming the adhesive film is performed. By rotating the retainer that holds the plurality of targets and the ion gun, the targets T1 and T3 (for example, all Ti targets) are directed to other than the film formation region FFA (the side that does not face the base material S) in the process chamber 50. After the pressure stabilizes, power is applied to the targets T1 and T3 (for example, both Ti targets) to turn Ar gas into plasma, and the preset power is used for a predetermined time to target T1 and T3 (for example, both Ti targets). ) Cleaning.

In step 45, an adhesive film forming step is performed. The retainer holding the plurality of targets and the ion gun is rotated to direct the targets T1 and T3 (for example, all Ti targets) toward the film formation region FFA (the side facing the base material S). After the pressure in the process chamber 50 is stabilized, preset power is supplied to the targets T1 and T3 (for example, both Ti targets) Ti targets to turn Ar gas into plasma. Then, in order to form an adhesive film (for example, a Ti film), the carrier CR is started to be conveyed toward the film forming region FFA, and passes through the film forming region FFA a specified number of times at a preset transfer speed. By allowing the substrate S to form an adhesive film (for example, a Ti film).

In step 46, a cleaning step of the target used for forming the seed film is performed. The retainer holding the plurality of targets and the ion gun is rotated to direct the targets T2 and T4 (for example, all Cu targets) to other than the film formation region FFA, and after the pressure in the process chamber 50 is stabilized, the targets T2, Electric power is applied to T4 (for example, both Cu targets) to turn Ar gas into plasma, and the targets T2 and T4 (for example, both Cu targets) are cleaned with a preset power for a predetermined time.

In step 47, a seed film forming step is performed. The retainer holding the plurality of targets and the ion gun is rotated to direct the targets T2 and T4 (for example, all Cu targets) toward the film formation region FFA (the side facing the base material S). After the pressure in the process chamber 50 is stabilized, preset electric power is supplied to the targets T2 and T4 (for example, both Cu targets) to turn Ar gas into plasma. Then, in order to form a seed film (for example, Cu film), the carrier CR is started to be conveyed toward the film forming region FFA, and passes through the film forming region FFA a specified number of times at a preset transfer speed. A seed film (for example, a Cu film) is formed on the adhesive film formed on the base material S.

In step 48, the carrier is removed from the holding portion 60 in the process chamber 50, and the carrier CR is discharged from the process chamber 50.

According to the second embodiment, a material having a large getter effect (for example, a Ti film) can be attached to the inner wall of the chamber other than the film formation region FFA before the etching process, and further, a getter is attached to the magnetic pole of the ion gun in the getter process. Since a material with a large effect (for example, Ti film) is coated, the active adsorption surface having a getter action is exposed in the film formation region FFA during the etching process, so that it is released from the base material S by etching. the water (H 2 _O) gas can be adsorbed in real time.

(Example 2-2)
Next, the film forming method of Example 2-2, which is a modification of Example 2-1, will be described with reference to the flowchart of the film forming method of Example 2-1 of FIG. The difference between the film forming method of Example 2-2 and the film forming method of Example 2-1 is step 42. The basic configuration of the getter step 42 is the same as the film forming method of FIG. That is, the getter step 33 of FIG. 12 is composed of steps 102 to 105 of the film forming method of FIG. The getter process is composed of step 102 and step 103 or step 104 and step 105 of the film forming method shown in FIG.
Hereinafter, step 42 will be described with reference to the flowchart of FIG. 12 and FIG. Since each step of step 41 and steps 43 to 48 is the same as each step of Example 2-1, the description thereof will be omitted.

Step 42 of Example 2-2: In the getter step, as shown in FIG. 6, the holding body holding the plurality of targets and the ion gun is rotated so that the targets T1 and T3 are placed on the target T1 and T3 other than the film formation region FFA (opposing the base material S). Turn to the side that does not). After the pressure in the process chamber 50 is stabilized, preset electric power is supplied to the targets T1 and T3 to turn Ar gas into plasma. Then, it is possible to deposit the getter effect is greater substance to gas or water remaining on the inner wall of the process chamber 50 other than the film formation region FFA (H 2 _O).

(Example 2-3)
Next, the film forming method of Example 2-3, which is a modification of Example 2-1, will be described with reference to the flowchart of the film forming method of Example 2-1 of FIG. The difference between the film forming method of Example 2-3 and the film forming method of Example 2-1 is step 42. The basic configuration of the getter step 42 is the same as the film forming method of FIG. That is, the getter step 42 of FIG. 12 is composed of steps 102 to 105 of the film forming method of FIG. The getter process is composed of step 102 and step 103 or step 104 and step 105 of the film forming method shown in FIG.
Hereinafter, step 42 will be described with reference to the flowchart of FIG. 12 and FIG. Since each step of step 41 and steps 43 to 48 is the same as each step of Example 2-1, the description thereof will be omitted.

Step 33 of Example 2-3: In the getter step, the above-mentioned method using the ion guns I1 and I2 and the method using the targets T1 and T3 are used in combination. In this case, as shown in FIG. 5, the ion guns I1 and I2 are directed to other than the film formation region FFA (the side not facing the base material S). At this time, the targets T1 and T3 are positioned so as to face the side wall of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion guns I1 and I2, and preset electric power is supplied to the targets T1 and T3 to turn Ar gas into plasma. _{Gas or water (H 2} O) remaining on the side wall of the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S) and the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S). A material having a large getter effect can be attached to the material.
Further, the method of using the above-mentioned method using the ion guns I1 and I2 and the method using the targets T1 and T3 in combination is also possible in the case of FIG. In this case, as shown in FIG. 6, the holding body holding the plurality of targets and the ion gun is rotated to direct the targets T1 and T3 to other than the film formation region FFA (the side not facing the base material S). In this case, the ion guns I1 and I2 are positioned so as to face the side wall of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion guns I1 and I2, and preset electric power is supplied to the targets T1 and T3 to turn Ar gas into plasma. _{Gas or water (H 2} O) remaining on the side wall of the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S) and the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S). A material having a large getter effect can be attached to the material.
Further, the method of using the above-mentioned methods using the ion guns I1 and I2 and the method using the targets T1 and T3 in combination can also be used in combination with the case of FIG. 5 and the case of FIG.
In this case, as shown in FIG. 5, the ion guns I1 and I2 are directed to other than the film formation region FFA (the side not facing the base material S). In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion guns I1 and I2 to turn Ar gas into plasma. _{Gas or water (H 2} O) remaining on the side wall of the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S) and the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S). A material having a large getter effect is attached to the material.
At this time, the ion guns I1 and I2 sputter the protective plates MS1 and MS2 formed on the upper inner wall of the process chamber 50.
In this state, as shown in FIG. 6, the retainer holding the plurality of targets and the ion gun is rotated to direct the targets T1 and T3 to other than the film formation region FFA (the side not facing the base material S). Then, the targets T1 and T3 are in a state of facing the upper inner wall of the process chamber 50. After the pressure in the process chamber 50 is stabilized, preset electric power is supplied to the targets T1 and T3 to turn Ar gas into plasma. As a result, a substance having a large getter effect can be formed on the protective plates MS1 and MS2 formed on the upper inner wall of the process chamber 50, which are sputtered by the ion guns I1 and I2.

(Example 3-1)
In Example 1-1 described above, an example in which the getter step is performed between the etching step and the adhesion film forming step is described, and in Example 2-1 the example in which the getter step is performed before the etching step is described. It may be performed both before the etching step and between the etching step and the adhesion film forming step. An example in which the getter step is performed both before the etching step and between the etching step and the adhesion film forming step will be described below as Example 3-1. FIG. 13 is a flowchart of the film forming method of Example 3-1 and Example 3-2 and Example 3-3. The basic configuration of the getter step 52 and the getter step 54 is the same as the film forming method of FIG. That is, the getter step 42 of FIG. 6 is composed of steps 102 to 105 of the film forming method of FIG. The getter process is composed of step 102 and step 103 or step 104 and step 105 of the film forming method shown in FIG.

In step 51, the carrier CR is transferred to the holding unit 60 in the process chamber 50.

In step 52, a getter step is performed. The holding body holding the plurality of targets and the ion gun is rotated to direct the ion guns I1 and I2 to other than the film formation region FFA. A protective plate (for example, made of Ti) is installed as a getter material supply source MS on the inner wall of the chamber of the process chamber 50 other than the film forming region FFA, and in this state, a voltage is applied to the ion guns I1 and I2. When the Ar gas is turned into plasma, the adhesion plate (for example, made of Ti) is sputtered, and the Ti film can be attached to the inner wall of the chamber other than the film formation region FFA and the magnetic poles of the ion guns I1 and I2. The "getter process", the getter process is an exhaust after sputtering and the sputtering of the Ti deposition preventing plate and a series of operations, since the operation is repeated two or more times, the pressure in the process chamber 50 or H _{2 O} content It is desirable to continue until the pressure drops below a predetermined pressure.

In step 53, an etching step is performed. The retainer holding the plurality of targets and the ion gun is rotated to direct the ion guns I1 and I2 toward the film formation region FFA. After the pressure in the process chamber 50 is stabilized from the gas introduction unit G1, a voltage is applied to the ion guns I1 and I2 to turn Ar gas into plasma. Then, in order to perform the etching process, the carrier CR is started to be transported toward the film forming region FFA, and the base material S is etched by passing the carrier CR through the film forming region FFA a predetermined number of times at a preset transport speed. do. When the etching process is completed, the voltage application to the ion gun is stopped. In the present embodiment, Ar gas is used as the introduction gas, but the present invention is not limited to this, and reactive gases such as nitrogen, oxygen, and hydrogen can also be used.

In step 54, a getter step is performed. The holding body holding the plurality of targets and the ion gun is rotated to direct the ion guns I1 and I2 to other than the film formation region FFA. A protective plate (for example, made of Ti) is installed as a getter material supply source MS on the inner wall of the chamber of the process chamber 50 other than the film forming region FFA, and in this state, a voltage is applied to the ion guns I1 and I2. When Ar gas is turned into plasma, the adhesive plate (for example, made of Ti) is sputtered, and a material having a large getter effect (for example, Ti film) is attached to the inner wall of the chamber other than the film formation region FFA and the magnetic poles of the ion guns I1 and I2. Can be made to. The "getter process", the getter process is an exhaust after sputtering and the sputtering of the Ti deposition preventing plate and a series of operations, since the operation is repeated two or more times, the pressure in the process chamber 50 or H _{2 O} content It is desirable to continue until the pressure drops below a predetermined pressure.

In step 55, a cleaning step of the target used for forming the adhesive film is performed. The pressure in the process chamber is stable by rotating the retainer that holds the plurality of targets and the ion gun so that the targets T1 and T3 (for example, the Ti target) are directed to other than the film formation region FFA (the side that does not face the base material S). After the conversion, electric power is applied to the targets T1 and T3 (for example, Ti target) to turn Ar gas into plasma, and the targets T1 and T3 (for example, Ti target) are cleaned with a preset power for a predetermined time.

In step 56, an adhesive film forming step is performed. The retainer holding the plurality of targets and the ion gun is rotated to direct the targets T1 and T3 (for example, all Ti targets) toward the film formation region FFA. After the pressure in the process chamber 50 is stabilized, preset electric power is supplied to the targets T1 and T3 (for example, both Ti targets) to turn Ar gas into plasma. Then, in order to form an adhesive film (for example, a Ti film), the carrier CR is started to be conveyed toward the film forming region FFA, and passes through the film forming region FFA a specified number of times at a preset transfer speed. By allowing the substrate S to form an adhesive film (for example, a Ti film).

In step 57, a cleaning step of the target used for forming the seed film is performed. By rotating the retainer that holds the plurality of targets and the ion gun, the targets T2 and T4 (for example, all Cu targets) are directed to other than the film formation region FFA (the side that does not face the base material S) in the process chamber 50. After the pressure stabilizes, power is applied to the Cu target to turn Ar gas into plasma, and the targets T2 and T4 (for example, both Cu targets) are cleaned with a preset power for a predetermined time.

In step 58, a seed film forming step is performed. The retainer holding the plurality of targets and the ion gun is rotated to direct the targets T2 and T4 (for example, all Cu targets) toward the film formation region FFA (the side facing the base material S). After the pressure in the process chamber 50 is stabilized, preset electric power is supplied to the targets T2 and T4 (for example, both Cu targets) to turn Ar gas into plasma. Then, in order to form a seed film (for example, Cu film), the carrier CR is started to be conveyed toward the film forming region FFA, and passes through the film forming region FFA a specified number of times at a preset transfer speed. A seed film (for example, a Cu film) is formed on the adhesive film formed on the base material S.

In step 59, the carrier CR is removed from the holding portion 60 in the process chamber 50, and the carrier CR is discharged from the process chamber 50.

According to the present Example 3-1, the effects of both the above-mentioned Examples 1-1 and 2-1 can be exhibited. Specifically, both the real-time getter effect during the etching process and the effect of cleaning the atmosphere in the process chamber before the adhesion film forming process can be expected.

(Example 3-2)
Next, the film forming method of Example 3-2, which is a modification of Example 3-1 will be described with reference to the flowchart of the film forming method of Example 3-1 of FIG. The difference between the film forming method of Example 3-2 and the film forming method of Example 3-1 is step 52 and step 54. The basic configuration of the getter step 52 and the getter step 54 is the same as the film forming method of FIG. That is, the getter step 52 and the getter step 54 of FIG. 13 are composed of steps 102 to 105 of the film forming method of FIG. The getter process is composed of step 102 and step 103 or step 104 and step 105 of the film forming method shown in FIG.
Hereinafter, steps 52 and 54 will be described with reference to the flowchart of FIG. 13 and FIG. Since each step of step 51, step 53, and steps 55 to 58 is the same as each step of Example 3-1. Therefore, the description thereof will be omitted.

Step 52 and Step 54 of Example 3-2: In the getter step, as shown in FIG. 6, the retainer holding the plurality of targets and the ion gun is rotated to set the targets T1 and T3 other than the film formation region FFA (base material). Turn to the side that does not face S). After the pressure in the process chamber 50 is stabilized, preset electric power is supplied to the targets T1 and T3 to turn Ar gas into plasma. Then, it is possible to deposit the getter effect is greater substance to gas or water remaining on the inner wall of the process chamber 50 other than the film formation region FFA (H 2 _O).

(Example 3-3)
Next, the film forming method of Example 3-3, which is a modification of Example 3-1 will be described with reference to the flowchart of the film forming method of Example 3-1 of FIG. The difference between the film forming method of Example 3-3 and the film forming method of Example 3-1 is step 52 and step 54. The basic configuration of the getter step 52 and the getter step 54 is the same as the film forming method of FIG. That is, the getter step 52 and the getter step 54 of FIG. 13 are composed of steps 102 to 105 of the film forming method of FIG. The getter process is composed of step 102 and step 103 or step 104 and step 105 of the film forming method shown in FIG.
Hereinafter, steps 52 and 54 will be described with reference to the flowchart of FIG. 13 and FIG. Since each step of step 51, step 53, and steps 55 to 58 is the same as each step of Example 3-1. Therefore, the description thereof will be omitted.

Step 52 and Step 54 of Example 3-3: In the getter step, the above-mentioned method using the ion guns I1 and I2 and the method using the targets T1 and T3 are used in combination. In this case, as shown in FIG. 5, the ion guns I1 and I2 are directed to other than the film formation region FFA (the side not facing the base material S). At this time, the targets T1 and T3 are positioned so as to face the side wall of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion guns I1 and I2, and preset electric power is supplied to the targets T1 and T3 to turn Ar gas into plasma. _{Gas or water (H 2} O) remaining on the side wall of the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S) and the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S). A material having a large getter effect can be attached to the material.
Further, the method of using the above-mentioned method using the ion guns I1 and I2 and the method using the targets T1 and T3 in combination is also possible in the case of FIG. In this case, as shown in FIG. 6, the holding body holding the plurality of targets and the ion gun is rotated to direct the targets T1 and T3 to other than the film formation region FFA (the side not facing the base material S). In this case, the ion guns I1 and I2 are positioned so as to face the side wall of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion guns I1 and I2, and preset electric power is supplied to the targets T1 and T3 to turn Ar gas into plasma. _{Gas or water (H 2} O) remaining on the side wall of the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S) and the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S). A material having a large getter effect can be attached to the material.
Further, the method of using the above-mentioned methods using the ion guns I1 and I2 and the method using the targets T1 and T3 in combination can also be used in combination with the case of FIG. 5 and the case of FIG.
In this case, as shown in FIG. 5, the ion guns I1 and I2 are directed to other than the film formation region FFA (the side not facing the base material S). In this state, after the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion guns I1 and I2 to turn Ar gas into plasma. _{Gas or water (H 2} O) remaining on the side wall of the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S) and the inner wall of the process chamber 50 of the film forming region FFA (the side facing the substrate S). A material having a large getter effect is attached to the material.
At this time, the ion guns I1 and I2 sputter the protective plates MS1 and MS2 formed on the upper inner wall of the process chamber 50.
In this state, as shown in FIG. 6, the retainer holding the plurality of targets and the ion gun is rotated to direct the targets T1 and T3 to other than the film formation region FFA (the side not facing the base material S). Then, the targets T1 and T3 are in a state of facing the upper inner wall of the process chamber 50. After the pressure in the process chamber 50 is stabilized, preset electric power is supplied to the targets T1 and T3 to turn Ar gas into plasma. As a result, a substance having a large getter effect can be formed on the protective plates MS1 and MS2 formed on the upper inner wall of the process chamber 50, which are sputtered by the ion guns I1 and I2.

(Comparison example)
The adhesive film forming step was performed in a conventional step (Patent Document 1 described above) in which the getter step of the present invention was not performed. FIG. 14 is a flowchart showing a processing procedure of a film forming method that does not perform a getter step.

In step 61, the carrier CR is transferred to the holding unit 60 in the process chamber 50.

In step 62, an etching step is performed. The retainer holding the plurality of targets and the ion gun is rotated to direct the ion guns I1 and I2 toward the film formation region FFA. After the pressure in the process chamber 50 is stabilized, a voltage is applied to the ion guns I1 and I2 to turn Ar gas into plasma. Then, in order to perform the etching process, the carrier CR is started to be transported toward the film forming region FFA, and the base material S is etched by passing the carrier CR through the film forming region FFA a predetermined number of times at a preset transport speed. do. When the etching step is completed, the voltage application to the ion guns I1 and I2 is stopped. In the present embodiment, Ar gas is used as the introduction gas, but the present invention is not limited to this, and reactive gases such as nitrogen, oxygen, and hydrogen can also be used.

In step 63, a cleaning step of the target used for forming the adhesive film is performed. The retainer holding the plurality of targets and the ion gun is rotated so that the targets T1 and T3 (for example, all Ti targets) are directed to other than the film formation region FFA, and after the pressure in the process chamber 50 is stabilized, the targets T1 and T1 are Electric power is applied to T3 (for example, both Ti targets) to turn Ar gas into plasma, and the targets T1 and T3 (for example, both Ti targets) are cleaned with a preset power for a predetermined time.

In step 64, an adhesive film forming step is performed. The retainer holding the plurality of targets and the ion gun is rotated to direct the targets T1 and T3 (for example, all Ti targets) toward the film formation region FFA (the side facing the base material S). After the pressure in the process chamber 50 is stabilized, preset electric power is supplied to the targets T1 and T3 (for example, both Ti targets) to turn Ar gas into plasma. Then, in order to form an adhesive film (for example, a Ti film), the carrier CR is started to be conveyed toward the film forming region FFA, and passes through the film forming region FFA a specified number of times at a preset transfer speed. By allowing the substrate S to form an adhesive film (for example, a Ti film).

In step 65, a cleaning step of the target used for forming the seed film is performed. The retainer holding the plurality of targets and the ion gun is rotated to direct the targets T2 and T4 (for example, all Cu targets) to other than the film formation region FFA, and after the pressure in the process chamber 50 is stabilized, the targets T2, Electric power is applied to T4 (for example, both Cu targets) to turn Ar gas into plasma, and the targets T2 and T4 (for example, both Cu targets) are cleaned with a preset power for a predetermined time.

In step 66, a seed film forming step is performed. The retainer holding the plurality of targets and the ion gun is rotated to direct the targets T2 and T4 (for example, all Cu targets) toward the film formation region FFA. After the pressure in the process chamber 50 is stabilized, preset electric power is supplied to the targets T2 and T4 (for example, both Cu targets) to turn Ar gas into plasma. Then, in order to form a seed film (for example, Cu film), the carrier CR is started to be conveyed toward the film forming region FFA, and passes through the film forming region FFA a specified number of times at a preset transfer speed. A seed film (for example, a Cu film) is formed on the adhesive film formed on the base material S.

In step 67, the carrier CR is removed from the holding portion 60 in the process chamber 50, and the carrier CR is discharged from the process chamber 50.

FIG. 15 shows the first embodiment (Examples 1-1 to 1-3) and the second embodiment (Examples 1-1 to 1-3, Examples 2-1 to 2-3. It is a figure which shows an example of the output signal of the gas introduction system 1024 when the getter process is repeated 2 times or more in the getter process of Examples 3-1 to 3-3). Ar gas is supplied to the process chamber 50. In the output signal of the gas introduction system 1024, the cycle of the gas introduction system output signal (getter process cycle) is P, the gas supply time (time to supply Ar gas to the process chamber 50, gas or water remaining in the process chamber 50). _(H 2 O) time of forming a getter-effective material against) is P1, a predetermined time period for exhausting the process chamber 50 is P2, the duty ratio is D = P1 / P.
In P1, the Ar gas supplied to the process chamber 50 starts to be supplied to the process chamber at the same time as the start of the first step or the third step shown in FIG. 3, and at the same time as the end of the first step or the third step. It is desirable to stop the supply to the process chamber.
Further, it is desirable that the exhaust in the process chamber 50 is started before or at the same time as the start of the first step shown in FIG.
Further, in P2, it is desirable that the exhaust of the process chamber 50 is performed for a predetermined time in a state where the supply of Ar gas to the process chamber is stopped at the same time as the end of the first step or the third step shown in FIG.
The Ar gas is supplied into the process chamber 50 by the gas introduction unit G1 of the film forming apparatus of FIGS. 1 and 9, and the exhaust into the process chamber 50 is performed by the exhaust unit V50 of the film forming apparatus of FIGS. 1 and 9.

FIG. 16 shows the first embodiment (Examples 1-1 to 1-3) and the second embodiment (Examples 1-1 to 1-3, Examples 2-1 to 2-3. It is a figure which shows an example of the output signal of the power source (SP) 1022 or 1023 power source (IG) 1023 when the getter process is repeated two or more times in the getter process of Examples 3-1 to 3-3). In this case, Ar gas is supplied to the process chamber 50. In the output signal of the power supply (SP) 1022 or power supply (IG) 1023, (the period of getter process) cycle of the power supply output signal P, the gas supply time (gas or water remaining in the process chamber 50 _(H 2 O) On the other hand, the time for forming a substance having a large getter effect) is P1, the predetermined time, the time for exhausting the process chamber 50 is P2, and the duty ratio is D = P1 / P, which are synchronized with the gas introduction system of FIG. Is output.
In P1, the electric power supplied to the process chamber 50 starts to be supplied to the process chamber at the same time as the start of the first step or the third step shown in FIG. 3, and is processed at the same time as the end of the first step or the third step. Stop the supply to the room.
Further, it is desirable that the exhaust in the process chamber 50 is started before or at the same time as the start of the first step shown in FIG.
Further, in P2, it is desirable that the exhaust of the process chamber 50 is performed for a predetermined time in a state where the supply of Ar gas to the process chamber is stopped at the same time as the end of the first step or the third step shown in FIG.
The output of electric power into the process chamber 50 is the output signal of the power supply (SP) 1022 or the power supply (IG) 1023 of FIGS. 2 and 10, and the exhaust of the process chamber 50 is the exhaust of the film forming apparatus of FIGS. 1 and 9. This is done in part V50.

FIG. 17 shows the time of the getter step and the time after the getter step of the film forming methods of Example 1-2 of the first embodiment, Example 1-2 of the second embodiment, Example 2-2 and Example 3-2. is a diagram showing the relationship between the process chamber of water (H 2 _O) partial pressure.
Inventors, in consideration of adhesion between the substrate and the adhesion layer without reducing productivity, water (H 2 _O) partial pressure found that it is desirable that not more than 0.3.
If a getter process time was 300 seconds, the getter process is repeated twice more water (H 2 _O) partial pressure became 0.3 at a duty ratio of 50% as shown in FIG. 17. In contrast, when the getter process time was 300 seconds, if the duty ratio of 100 percent to conduct once the getter process as shown in FIG. 17, water _(H 2 O) partial pressure became 0.45. Repeating duty ratio of 50% in the getter process two or more times, compared with water _(H 2 O) partial pressure in the case of performing once getter process, reduced to about 2/3 (0.3 / 0.45) can do.
On the other hand, as shown in FIG. 17, when carried out once a getter process, the _{H 2} O partial pressure of 0.3 is getter process time 400 seconds. As described above, when the getter process is repeated twice or more with a duty ratio of 50%, the getter process time can be shortened by 100 seconds (400 seconds). Therefore, if the getter process is repeated twice or more with a duty ratio of 50%, the throughput can be reduced to about 3/4 (300/400) as compared with the case of a duty ratio of 100% in which the getter process is performed once. can.
In addition, the getter process of the other film forming method described above (Example 1-1 and Example 1-3 of the first embodiment, Example 1-1 and the embodiment 1-3 and the embodiment 2-1 of the second embodiment). When Examples 2-3, 3-1 and 3-3) were carried out, gas or water (H) remaining on the inner wall of the chamber of the process chamber 50 of the film formation region FFA and the magnetic pole of the ion gun. _{Since a} material having a large getter effect can be attached to 2 O), a better effect can be obtained than in the case shown in FIG.

FIG. 18 shows a getter process time of 300 seconds in the getter process of the film forming methods of Example 1-2 of the first embodiment, Example 1-2 of the second embodiment, Example 2-2, and Example 3-2. it is a diagram showing the relationship between the duty ratio and the getter processing chamber of the water after step (H 2 _O) partial pressure in the. As shown in FIG. 18, when the duty ratio is 0% in which vacuum exhaust is performed without performing the getter step, the _{partial pressure of water (H 2} O) is 0.6. If the duty ratio of 100 percent to conduct once the getter process as shown in FIG. 18, water _(H 2 O) partial pressure is 0.45. In contrast, a getter process is repeated two more times if reduced water (H 2 _O) partial pressure of the process chamber, H2 O partial pressure in the range of 66 percent from the duty ratio 34% is 0.3 or less, the duty ratio Compared to the case of 0 percent, the _{partial pressure of water (H 2} O) is reduced to about 1/2 (0.3 / 0.6). Furthermore, when the getter process is repeated twice or more, the _{partial pressure of water (H 2} _{O) in the process chamber is reduced, and the partial pressure of water (H 2} O) becomes 0.3 or less in the duty ratio range of 34% to 66%. as compared with the case of the ratio 100%, reduced water _(H 2 O) partial pressure to about 2/3 (0.3 / 0.45).
In addition, the getter process of the other film forming method described above (Example 1-1 and Example 1-3 of the first embodiment, Example 1-1 and the embodiment 1-3 and the embodiment 2-1 of the second embodiment). When Examples 2-3, 3-1 and 3-3) were carried out, gas or water (H) remaining on the inner wall of the chamber of the process chamber 50 of the film formation region FFA and the magnetic pole of the ion gun. _{Since a} material having a large getter effect can be attached to 2 O), a better effect can be obtained than in the case shown in FIG.

FIG. 19 shows the repetitive operation and the exhaust operation in the getter process of the film forming methods of the first embodiment 1-2, the second embodiment 1-2, the second embodiment and the third embodiment. is a diagram showing the relationship of the process chamber of water (H 2 _O) partial pressure. If the process chamber of the process only the film forming one Ti film while introducing Ar gas (right graph of FIG. 19), water _(H 2 O) partial pressure is 0.45. In the case of a process in which the formation of a Ti film is intermittently repeated with Ar gas introduced into the process chamber (no exhaust during the formation of Ti) (corresponding to Patent Document 2, the graph in the center of FIG. 19), water (H ₂ O). ) The partial pressure is 0.4. On the other hand, in the case of the getter process of the present invention (graph on the left in FIG. 19) in which the getter process in which the formation of the Ti film and the exhaust after the formation of the Ti film is performed as a series of operations is repeated two or more times, H ₂ _{The O partial pressure is 0.3 or less, and the water (H 2} O) component is compared with the case of a process in which the Ti film is formed only once with Ar gas introduced into the process chamber (graph on the right in FIG. 19). A process in which the formation of a Ti film is intermittently repeated with Ar gas introduced into the process chamber until the pressure is reduced to about 2/3 (0.3 / 0.45) (no exhaust during the formation of Ti) (Patent Document 2). It can be reduced to about 3/4 (0.3 / 0.4) as compared with the case of (the graph in the center of FIG. 19).
Thus, according to the present invention, water (H 2 _O) partial pressure becomes 0.3 or less, it can improve the adhesion between the substrate S and the adhesive layer without reducing the productivity.

Although the preferred embodiments 1 and 2 of the present invention have been described above, the present invention is not limited to these embodiments 1 and 2, and various modifications and modifications can be made within the scope of the gist thereof. ..

In the first embodiment and the second embodiment, the getter material has been described as Ti, but the getter material is not limited to Ti, and the getter effect is applied to oxygen and water composed of Ta, Zr, Cr, Nb, Mo and the like. Larger substances can be used. Further, two or more alloys having a large getter effect can be used.

Further, although the adhesion film of the first embodiment and the second embodiment has been described as a Ti film, the adhesion film is not limited to the Ti film, and is not limited to the Ti film, but TiN, Ta, TaN, Ni, Cr, NiCr alloy, Ta alloy, Cu. Alloys and the like can be used. Here, in consideration of productivity, a Cu film is formed on the adhesive film as a seed film for stable growth of electrolytic Cu plating. Therefore, the adhesive film and the seed film are made into a Cu etching solution on the adhesive film. A Cu alloy that can be removed all at once is preferable. Since the Cu alloy is not a substance having a large getter effect on oxygen and water, when a Cu alloy is used as the adhesion film, a substance having a large getter effect is not mounted on the cathode. It has MS and can carry out the getter process without being limited to the sputtered film type.

Further, although the seed film of the first embodiment and the second embodiment has been described as a Cu film, the seed film is not limited to the Cu film, and a CuAl alloy, a CuW alloy, or the like can be used.

Further, in FIGS. 15 and 16, the duty ratio D = P1 / P is in the range of 34% to 66%, and the duty ratios D = P1 / P of the third step and the fourth step are the first step and the first step. It is preferable to control the gas introduction unit G1 of FIG. 1 or 9 and the exhaust unit V50 of FIG. 1 or 9 so that the duty ratio D = P1 / P of the two steps is smaller.
Further, in FIGS. 15 and 16, the duty ratio D = P1 / P is in the range of 34% to 66%, and the duty ratio D = P1 / P of the fifth step and the sixth step is the third step and the third step. It is preferable to control the gas introduction unit G1 of FIG. 1 or 9 and the exhaust unit V50 of FIG. 1 or 9 so that the duty ratio D = P1 / P of the four steps is smaller.
As a result, the time P1 of the third step becomes smaller than the time P1 of the first step, and the time P1 of the fifth step becomes smaller than the time P1 of the third step. It becomes larger than the time P2 of the second step, and the time P2 of the sixth step becomes larger than the time P2 of the fourth step.
As a result, the getter effect at the initial stage of the getter process in which the partial pressure of _{water (H 2} _{O) is high is increased, so that the desired partial pressure of water (H 2} O) can be reached in a short time, and the productivity can be improved. ..

Claims

Process room and
A processing unit provided in the process chamber to form an adhesive film, and
It is a film forming apparatus having
An inner wall surface of the process chamber, the deposition apparatus characterized by being formed by the getter effect is greater substance to gas or water (H 2 O) remaining in the process chamber.
A holding part that holds the base material in the process chamber,
A driving unit that moves the holding portion that holds the base material so that the base material passes through a film forming region in the process chamber.
A cooling unit that cools the holding unit,
The film forming apparatus according to claim 1, further comprising.
The film forming apparatus includes a platform that can be used for transferring the base material to and from an apparatus other than the film forming apparatus.
A load lock chamber that can be used to deliver the untreated substrate provided by the platform and the post-deposition substrate provided by the process chamber.
The film forming apparatus according to claim 1 or 2, wherein the film forming apparatus is provided.
The film forming apparatus according to any one of claims 1 to 3, wherein the processing unit is composed of a rotating cathode that rotates a support that holds a plurality of targets and an ion gun.
Process room and
A processing unit provided in the process chamber to form an adhesive film, and
An exhaust unit that can evacuate the process chamber and
A gas introduction unit that introduces a gas for forming the adhesion film in the process chamber,
It is a control device of a film forming apparatus having
The control device includes a storage unit that stores a control program.
The control program
The process chamber, a first step of forming a getter-effective materials to gases or water (H 2 O) remaining in the process chamber,
A second step of exhausting the process chamber for a predetermined time after the first step, and
After the second step, the said process chamber, and a third step of forming a getter-effective materials to gases or water (H 2 O) remaining in the process chamber,
A fourth step of exhausting the process chamber for a predetermined time after the third step, and
After the fourth step, the step of forming an adhesive film on the substrate provided in the process chamber is included.
When the time of the first step or the third step is P1, the total time of the first step and the second step, or the total time of the third step and the fourth step is P, the duty ratio D = P1. A control device characterized in that the exhaust unit and the gas introduction unit are controlled so that / P is 34% or more and 66% or less.
The gas supplied to the process chamber is started to be supplied to the process chamber at the same time as the start of the first step or the third step by using the gas introduction unit, and the process is started at the same time as the end of the first step or the third step. The control device according to claim 5, wherein the supply to the room is stopped.
The film forming method according to claim 5 or 6, wherein the exhaust in the process chamber is started by using the exhaust unit to start the exhaust in the process chamber at the same time as the start of the first step.
The electric power supplied to the process chamber is started to be supplied to the process chamber at the same time as the start of the first step or the third step by using a power source, and the process is started at the same time as the end of the first step or the third step. The control device according to any one of claims 5 to 7, wherein the supply to the room is stopped.
The process chamber, a first step of forming a getter-effective materials to gases or water (H 2 O) remaining in the process chamber,
A second step of exhausting the process chamber for a predetermined time after the first step, and
After the second step, the said process chamber, and a third step of forming a getter-effective materials to gases or water (H 2 O) remaining in the process chamber,
A fourth step of exhausting the process chamber for a predetermined time after the third step, and
A film forming method comprising a adhesion film forming step of forming an adhesion film on a substrate provided in the process chamber after the fourth step.
When the time of the first step or the third step is P1, the total time of the first step and the second step, or the total time of the third step and the fourth step is P, the duty ratio D = P1. The film forming method according to claim 9, wherein / P is 34% or more and 66% or less.
The film forming method according to claim 9 or 10, further comprising a seed film forming step of forming a seed film on the adhesive film after the adhesive film forming step.
The film forming method according to any one of claims 9 to 11, further comprising an etching step of etching the surface of the base material before the first step.
The film forming method according to any one of claims 9 to 12, further comprising an etching step of etching the surface of the base material after the fourth step.
The result according to any one of claims 9 to 13, wherein the base material is either a Si substrate, a glass or resin square member, or a resin film fixed to a support. Membrane method.
Claims 9 to 14, wherein the adhesion film is any one of a Ti film, a TiN film, a Ta film, a TaN film, a Ni film, a Cr film, a NiCr alloy film, a Ta alloy film, and a Cu alloy film. The film forming method according to any one item.
The film forming method according to claim 11, wherein the seed film is any one of a Cu film, a CuAl alloy film, and a CuW alloy film.
In the first step or the third step, the target for forming the adhesion film, the target for forming the seed film, and the holding body holding the ion gun are rotated to face the ion gun with the base material. toward the city side, by etching the getter-effective materials to the process chamber gas or water is formed on the inner wall surface of the (H 2 O), a process chamber, gas or water remaining in the process chamber The film forming method according to any one of claims 9 to 16, wherein a substance having a large getter effect with respect to (H 2 O) is formed.
In the first step or the third step, the holding body is rotated so that the target for forming the adhesion film is directed to a side not facing the base material, and the adhesion film is formed on the inner wall surface of the process chamber. The film forming method according to claim 17, wherein a film is formed.
The film formation according to claim 17 or 18, wherein the etching step is to rotate the holding body, direct the ion gun toward the side facing the base material, and etch the surface of the base material. Method.
The adhesive film forming step is characterized in that the holding body is rotated to direct the target for forming the adhesive film to the side facing the base material, and the adhesive film is formed on the base material. The film forming method according to any one of claims 17 to 19.
The seed film forming step is characterized in that the holding body is rotated to direct the target for forming the seed film toward the side facing the base material, and the seed film is formed on the adhesive film. The film forming method according to any one of claims 11 to 20.
The gas supplied to the process chamber shall start supplying to the process chamber at the same time as the start of the first step or the third step, and stop supplying to the process chamber at the same time as the end of the first step or the third step. The film forming method according to any one of claims 9 to 21, wherein the film forming method is characterized.
The film forming method according to any one of claims 9 to 22, wherein the exhaust in the process chamber starts exhaust in the process chamber at the same time as the start of the first step.
The electric power supplied to the process chamber starts to be supplied to the process chamber at the same time as the start of the first step or the third step, and stops to be supplied to the process chamber at the same time as the end of the first step or the third step. The film forming method according to any one of claims 9 to 23.
Within the range where the duty ratio D = P1 / P is 34% or more and 66% or less, the duty ratio D = P1 / P of the third step and the fourth step is the duty of the first step and the second step. The control device according to claim 5, wherein the exhaust unit and the gas introduction unit are controlled so that the ratio D = P1 / P or less.
Within the range where the duty ratio D = P1 / P is 34% or more and 66% or less, the duty ratio D = P1 / P of the third step and the fourth step is the duty of the first step and the second step. The film forming method according to claim 10, wherein the ratio is made smaller than D = P1 / P.