JP2011168827A - Substrate treatment device and method of producing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve uniformity of in-plane thickness of a thin film formed on a substrate. <P>SOLUTION: A substrate treatment device includes: an ion generation part for generating ions; a target holding part that holds a target group having a plurality of targets arrayed and rotates the target group such that ions are made incident on a prescribed target among the target group; a substrate holding part that holds the substrate such that sputtering particles generated on the prescribed target are made incident; and a regulation member holding part that holds a plurality of regulation members for regulating incidence of the sputtering particles onto the substrate and inserts a prescribed regulation member associated with the prescribed target between the substrate and the prescribed target. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus for processing a substrate and a method for manufacturing a semiconductor device.

  As one step of a method for manufacturing a semiconductor device such as a magnetoresistive element memory (MRAM (Magnetorescent Random Access Memory)), for example, a substrate processing step of forming a plurality of thin films on a substrate is performed. A conventional substrate processing apparatus that performs such a process includes an ion generating unit that generates ions, a target holding unit that holds a target so that ions are incident, and a substrate that allows sputtered particles generated on the target to be incident And a substrate holding part for holding the substrate.

  When a plurality of types of thin films are continuously formed on the substrate, the target holding unit is configured to hold a plurality of targets made of different materials. And the target holding | maintenance part was comprised so that the arrangement | sequence of a target might be rotated so that ion might inject into a predetermined target according to the kind of thin film to form into a film (for example, patent documents 1, 2).

Japanese Patent Laid-Open No. 1-205071 JP 2008-75163 A

  However, for example, the incident amount of sputtered particles may be non-uniform in the substrate surface due to differences in the material of the target. For this reason, the uniformity of the in-plane film thickness of the thin film formed on the substrate may be reduced.

  An object of the present invention is to provide a substrate processing apparatus and a semiconductor device manufacturing method capable of improving the in-plane film thickness uniformity of a thin film formed on a substrate.

According to one aspect of the invention,
An ion generator that generates ions;
A target holding unit that holds a target group in which a plurality of targets are arranged, and rotates the target group so that the ions are incident on a predetermined target of the target group;
A substrate holder for holding the substrate so that sputtered particles generated at the predetermined target are incident thereon;
A regulating member holding unit that holds a plurality of regulating members that regulate incidence of the sputtered particles on the substrate, and inserts a prescribed regulating member corresponding to the given target between the substrate and the given target; ,
A substrate processing apparatus is provided.

According to another aspect of the invention,
A step of generating ions by an ion generator;
A step of holding a target group in which a plurality of targets are arranged by a target holding unit, and rotating the target group so that the ions are incident on a predetermined target of the target group;
A step of holding the substrate so that sputtered particles generated at the predetermined target are incident by the substrate holding unit;
A plurality of regulating members that regulate the incidence of the sputtered particles on the substrate are held by the regulating member holding unit, and a predetermined regulating member corresponding to the predetermined target is inserted between the substrate and the predetermined target. A process of
A method of manufacturing a semiconductor device having the above is provided.

  According to the substrate processing apparatus and the semiconductor device manufacturing method of the present invention, it is possible to improve the in-plane film thickness uniformity of the thin film formed on the substrate.

1 is a cross-sectional view of a substrate processing apparatus according to a first embodiment of the present invention. 1 is a longitudinal sectional view of a substrate processing apparatus according to a first embodiment of the present invention. It is a longitudinal section of the 1st processing furnace concerning a 1st embodiment of the present invention. 1 is a cross-sectional view of a first processing furnace according to a first embodiment of the present invention. It is a longitudinal section of the 1st processing furnace concerning a 1st embodiment of the present invention. It is the schematic which looked at the wafer from the target side which concerns on the 1st Embodiment of this invention. It is a flow figure showing a substrate processing process concerning a 1st embodiment of the present invention. It is a figure which shows the specific example of the nonuniformity of the in-plane film thickness distribution of the thin film by the difference in target material. It is a longitudinal cross-sectional view of the processing furnace provided with only one regulating member. It is a longitudinal cross-sectional view of the 1st processing furnace which concerns on the 2nd Embodiment of this invention. It is a longitudinal cross-sectional view of the 1st processing furnace which concerns on the 2nd Embodiment of this invention.

<First Embodiment of the Present Invention>
(1) Configuration of Substrate Processing Apparatus First, a schematic configuration example of a substrate processing apparatus according to a first embodiment of the present invention will be described with reference to FIGS. In a substrate processing apparatus to which the present invention is applied, a FOUP (Front Opening Unified Pod: hereinafter referred to as a pod) is used as a carrier for transporting a wafer 1 as a substrate. In the following description, front, rear, left and right are based on FIG. That is, with respect to the paper surface shown in FIG. 1, the front is below the paper surface, the back is above the paper surface, and the left and right are the left and right of the paper surface.

(First transfer chamber)
As shown in FIGS. 1 and 2, the substrate processing apparatus includes a first transfer chamber 12. The first transfer chamber 12 has a load lock chamber structure that can withstand a pressure (negative pressure) less than atmospheric pressure such as a vacuum state. The casing 11 of the first transfer chamber 12 is formed in a box shape in which the plan view is hexagonal and the upper and lower ends are closed. A first substrate transfer machine 13 for transferring the wafer 1 under a negative pressure is installed in the first transfer chamber 12. The first substrate transfer machine 13 is configured to be lifted and lowered by the elevator 14 while maintaining the airtightness in the first transfer chamber 12.

(Spare room)
The two side walls located on the front side of the six side walls of the housing 11 are connected to the carry-in spare chamber 15 and the carry-out spare chamber 16 via gate valves 17 and 18, respectively. . The spare chamber 15 and the spare chamber 16 are each configured to have a load lock chamber structure that can withstand negative pressure. Further, a loading substrate table 19 is installed in the preliminary chamber 15. In addition, the spare chamber 16 is provided with a substrate table 20 for carrying out.

(Second transfer chamber)
A second transfer chamber 22 used at substantially atmospheric pressure is connected to the front sides of the reserve chamber 15 and the reserve chamber 16 via gate valves 23 and 24. A second substrate transfer machine 25 for transferring the wafer 1 is installed in the second transfer chamber 22. The second substrate transfer machine 25 is configured to be moved up and down by an elevator 26 installed in the second transfer chamber 22 and is configured to be reciprocated in the left-right direction by a linear actuator 27. Yes.

  A notch or orientation flat aligning device 28 is installed on the left side of the second transfer chamber 22 (see FIG. 1). A clean unit 29 for supplying clean air is installed above the second transfer chamber 22 (see FIG. 2).

  On the front side of the housing 21 of the second transfer chamber 22, a wafer loading / unloading port 30 for loading / unloading the wafer 1 into / from the second transfer chamber 22 and a pod opener 31 are installed. An IO stage 32 is installed on the opposite side of the pod opener 31 across the wafer loading / unloading port 30, that is, on the outside of the housing 21. The pod opener 31 includes a closure 31a capable of opening and closing the cap 2a of the pod 2 and closing the wafer loading / unloading port 30, and a drive mechanism 31b for driving the closure 31a. The pod opener 31 opens and closes the cap 2 a of the pod 2 placed on the IO stage 32, thereby enabling the wafer 1 to be taken in and out of the pod 2. The pod 2 is carried in (supplied) and carried out (discharged) with respect to the IO stage 32 by an in-process transfer device (RGV) (not shown).

(Processing furnace and cooling unit)
As shown in FIG. 1, a first processing furnace 33 for performing a desired process on the wafer 1 is provided on two side walls located on the rear side (back side) of the six side walls of the housing 11. And the second processing furnace 34 are connected to each other through gate valves 35 and 36, respectively. Each of the first processing furnace 33 and the second processing furnace 34 is configured as a hot wall type processing furnace. In the present embodiment, the first processing furnace 33 and the second processing furnace 34 are configured to perform sputtering film formation as described later.

  A first cooling unit 37 as a cooling chamber and a second cooling unit 38 are connected to the remaining two opposite side walls of the six side walls of the housing 11. . Both the first cooling unit 37 and the second cooling unit 38 are configured to cool the processed wafer 1.

  The substrate processing apparatus includes a first transfer chamber 12, a second transfer chamber 22, spare chambers 15 and 16, a first processing furnace 33, a second processing furnace 34, a first cooling unit 37, A controller 240 is provided as a control unit that controls all the operations of the second cooling unit 38.

(2) Operation of Substrate Processing Apparatus Next, a series of processes for processing the wafer 1 in the substrate processing apparatus will be described with reference to FIGS. In the following description, the operation of each part constituting the substrate processing apparatus is entirely controlled by the controller 240.

A pod 2 containing, for example, 25 unprocessed wafers 1 is transferred to a substrate processing apparatus by an in-process transfer apparatus (not shown). As shown in FIGS. 1 and 2, the pod 2 is delivered from the in-process transfer device and placed on the IO stage 32. The cap 2a of the pod 2 is removed by the pod opener 31, and the wafer loading / unloading port of the pod 2 is opened.

  When the pod 2 is opened by the pod opener 31, the second substrate transfer machine 25 picks up the wafer 1 from the pod 2 and loads it into the preliminary chamber 15, and transfers the wafer 1 onto the wafer table 19. During the transfer operation, the gate valve 17 on the first transfer chamber 12 side of the preliminary chamber 15 is closed, and the negative pressure in the first transfer chamber 12 is maintained. When the transfer of a predetermined number of, for example, 25 wafers 1 stored in the pod 2 onto the wafer table 19 is completed, the gate valve 23 is closed and the inside of the preliminary chamber 15 is negatively pressured by an exhaust device (not shown). Exhaust.

  When the pressure in the preliminary chamber 15 reaches a preset pressure value, the gate valve 17 is opened to connect the preliminary chamber 15 and the first transfer chamber 12. Subsequently, the first substrate transfer device 13 in the first transfer chamber 12 picks up the wafer 1 from the wafer table 19 and loads it into the first transfer chamber 12. After closing the gate valve 17, the gate valve 35 is opened to allow the first transfer chamber 12 and the first processing furnace 33 to communicate with each other. Subsequently, the first substrate transfer machine 13 carries the wafer 1 from the first transfer chamber 12 into the first processing furnace 33 and transfers it onto the support in the first processing furnace 33. After the gate valve 35 is closed, a substrate processing step for forming a thin film such as a magnetic thin film is performed in the first processing furnace 33 as will be described later.

  When the substrate processing step is completed in the first processing furnace 33, the gate valve 35 is opened, and the first substrate transfer machine 13 has processed the wafer into the first transfer chamber 12 from the first processing furnace 33. Unload 1 After unloading the wafer 1 from the first processing furnace 33, the gate valve 35 is closed.

  The wafer 1 unloaded from the first processing furnace 33 by the first substrate transfer machine 13 is loaded into the first cooling unit 37, and the processed wafer 1 is cooled.

  While the processed wafer 1 is cooled, the wafer 1 prepared in advance on the wafer table 19 in the preliminary chamber 15 is carried into the first processing furnace 33 by the first substrate transfer device 13. To do. After the gate valve 35 of the first processing furnace 33 is closed, the substrate processing step is performed in the first processing furnace 33.

  When a preset cooling time has elapsed in the first cooling unit 37, the cooled wafer 1 is unloaded from the first cooling unit 37 into the first transfer chamber 12 by the first substrate transfer device 13. .

  After the cooled wafer 1 is carried out from the first cooling unit 37 into the first transfer chamber 12, the gate valve 18 is opened. Then, the wafer 1 unloaded from the first cooling unit 37 is transferred into the preliminary chamber 16 and transferred onto the wafer table 20, and then the preliminary chamber 16 is closed by the gate valve 18.

  By repeating the above operation, a predetermined number of, for example, 25 wafers 1 loaded into the preliminary chamber 15 are sequentially processed.

  The processing for all the wafers 1 loaded into the spare chamber 15 is finished, all the processed wafers 1 are stored in the spare chamber 16, and the spare chamber 16 is closed by the gate valve 18. Then, an inert gas is supplied into the preliminary chamber 16 to make it approximately atmospheric pressure. When the inside of the preliminary chamber 16 is brought to substantially atmospheric pressure, the gate valve 24 is opened, and the cap 2 a of the empty pod 2 placed on the IO stage 32 is opened by the pod opener 31. Subsequently, the second substrate transfer machine 25 in the second transfer chamber 22 picks up the wafer 1 from the wafer table 20 and carries it out into the second transfer chamber 22. Are stored in the pod 2 through the wafer loading / unloading port 30.

  When the storage of the 25 processed wafers 1 into the pod 2 is completed, the cap 2a of the pod 2 is closed by the pod opener 31. Then, the closed pod 2 is transferred from the IO stage 32 to the next process by the in-process transfer apparatus.

  The above operation has been described by taking the case where the first processing furnace 33 and the first cooling unit 37 are used as an example, but the same applies to the case where the second processing furnace 34 and the second cooling unit 38 are used. Perform the operation. In the above-described continuous processing apparatus, one spare chamber 15 is used for carrying in and the other spare chamber 16 is used for carrying out. However, one spare chamber 16 may be used for carrying in, and the other spare chamber 15 may be used for carrying out. . The first processing furnace 33 and the second processing furnace 34 may perform the same process, or may perform different processes. In the case where different processing is performed in the first processing furnace 33 and the second processing furnace 34, for example, after the predetermined substrate processing is performed on the wafer 1 in the first processing furnace 33, the second processing is continued. Another substrate processing may be performed in the furnace 34. In the case where another substrate processing is not performed in the second processing furnace 34 after a predetermined substrate processing is performed on the wafer 1 in the first processing furnace 33, the first cooling unit 37 or the second cooling is performed. You may make it go through the unit 38. Further, it may be possible not to pass through the first cooling unit 37 or the second cooling unit 38 as necessary, for example, by performing no heat treatment in the processing in the first processing furnace 33 and the second processing furnace 34.

(3) Configuration of Processing Furnace Next, the configuration of the first processing furnace 33 and the second processing furnace 34 configured to be capable of performing the sputtering film formation will be described with reference to FIGS. 3, 4, and 5. . Since the first processing furnace 33 and the second processing furnace 34 have substantially the same configuration, the following description will be given by taking the first processing furnace 33 as an example.

  FIG. 3 is a longitudinal sectional view of the first processing furnace 33 according to the first embodiment of the present invention. FIG. 4 is a cross-sectional view of the first processing furnace 33 according to the first embodiment of the present invention. FIG. 5 is a longitudinal sectional view of the first processing furnace 33 according to the first embodiment of the present invention.

  As shown in FIGS. 3, 4, and 5, the first processing furnace 33 includes a processing chamber 40 mainly including a film forming chamber 42 and a sputtering chamber 41.

(Deposition room)
First, the configuration of the film forming chamber 42 will be described. The film forming chamber 42 is formed in the vacuum container 42a. The vacuum vessel 42a is configured in a cubic shape. The vacuum vessel 42a is connected adjacent to the back wall (right side in the figure) of the housing 11. On the side wall (hereinafter referred to as the front wall) adjacent to the housing 11 of the vacuum vessel 42 a, a loading / unloading port 43 for transferring the wafer 1 into the film forming chamber 42 is opened. The carry-in / out port 43 is configured to be opened and closed by a gate valve 35 (see FIGS. 1 and 2). The wafer 1 is transferred into and out of the film forming chamber 42 by the first substrate transfer machine 13 shown in FIG. 1 as described above. Then, the wafer 1 can be transferred between the first transfer chamber 12 and the film forming chamber 42 by opening the gate valve 35. Further, an opening 42 b communicating with the sputtering chamber 41 is formed in a side wall (hereinafter referred to as a back wall) adjacent to the sputtering chamber 41 of the vacuum vessel 42 a. The opening 42b can be opened and closed by a gate valve (not shown) so that sputtered particles 98 from the sputtering chamber 41 can enter. Note that the gas atmosphere in the film forming chamber 42 is configured to be evacuated through the sputtering chamber 41 as described later.

(Substrate holder)
In the film forming chamber 42, a substrate holding unit 50 that holds the wafer 1 made of Si as a substrate is provided. The substrate holding unit 50 is configured as a chuck mechanism such as a vacuum chuck or an electrostatic chuck, and the wafer 1 is held on the upper surface (holding surface) of the substrate holding unit 50. The substrate holding unit 50 is configured to be controlled in posture by a tilt mechanism 52. Then, the wafer 1 held on the substrate holding unit 50 is set in a horizontal posture (at the time of transferring the wafer 1, a posture in which the upper surface of the wafer 1 faces the ceiling of the vacuum vessel 42 a) or in a vertical posture (upper surface of the wafer 1. Is a posture facing the target holding unit 46 side). In FIG. 3, the dotted line indicates that the substrate holding unit 50 is in the horizontal posture (the wafer 1 is horizontal), and the solid line indicates that the substrate holding unit 50 is in the vertical posture (the wafer 1 is vertical). Show.

  At the time of film formation, the upper surface (processing surface on which a thin film is formed) of the wafer 1 placed on the substrate holding unit 50 is selected from a target group 48 held by a target holding unit 46 described later. It is configured to face one target (also called a predetermined target) 47. And it is comprised so that the sputtered particle 98 which generate | occur | produced in the predetermined target 47 mentioned later may inject into the upper surface of the wafer 1. FIG.

  The substrate holding unit 50 is configured to be rotatable in the circumferential direction with respect to the main surface of the wafer 1 by a rotation mechanism 51. The rotation mechanism 51 and the tilt mechanism 52 are configured by, for example, a servo motor. The rotation mechanism 51 and the tilt mechanism 52 are controlled by a controller 240.

(Sputtering chamber)
The sputtering chamber 41 is formed in the vacuum vessel 41a. The vacuum vessel 41a is configured in a rectangular parallelepiped shape. The vacuum vessel 41 a is connected adjacent to the back wall in the film formation chamber 42. An opening 41b communicating with the film forming chamber 42 is formed in a side wall (hereinafter referred to as a front wall) adjacent to the film forming chamber 42 of the vacuum vessel 41a. The opening 41b can be opened and closed by a gate valve (not shown), and is configured to be able to emit sputtered particles 98 generated in the sputtering chamber 41. The sputtering chamber 41 is configured to be able to exhaust the gas atmosphere in the film forming chamber 42 through the opening 41b as will be described later. In the sputtering chamber 41, an ion generation unit 80, a target holding unit 46, and a regulating member holding unit 100, which will be described later, are provided.

(Gas exhaust part)
Exhaust ports 53a and 53b are formed in the lower portion of the back wall in the vacuum vessel 41a (on the left side in FIG. 4). A pipe 54a is connected to the exhaust port 53a. For example, a cryopump 55a is connected to the pipe 54a as an exhaust pump. A pipe 54b is connected to the exhaust port 53b. For example, a turbo molecular pump 55b is connected to the pipe 54b as an exhaust pump. The inside of the sputtering chamber 41 is configured so that the gas atmosphere is exhausted together with the inside of the film forming chamber 42. That is, by closing the loading / unloading port 43 of the film forming chamber 42 and opening the openings 41b and 42b, the inside of the film forming chamber 42 and the inside of the sputtering chamber 41 can be evacuated. A turbo molecular pump 55b is used during film formation, and a cryopump 55a is used during other film formation. Accordingly, a high vacuum atmosphere is always maintained in the film forming chamber 42 and the sputtering chamber 41, and the cleanliness is maintained. The gas exhaust part according to this embodiment is mainly configured by the exhaust ports 53a and 53b, the pipes 54a and 54b, the cryopump 55a, and the turbo molecular pump 55b. The cryopump 55a and the turbo molecular pump 55b are controlled by the controller 240.

(Ion generator)
An ion generator 80 is installed in the lower part of the outer periphery of the vacuum vessel 41a. As will be described later, the ion generator 80 generates, for example, Ar gas ions 97, and the generated ions 9
7 is supplied into the sputtering chamber 41.

  As shown in FIG. 3, the ion generator 80 includes a housing 81. An ion source chamber 82 is formed in the housing 81. The casing 81 is formed in a cylindrical shape with one end (the side opposite to the connection side with the vacuum vessel 41a) closed. An ion irradiation port 83 is opened in the lower portion of the side wall of the vacuum vessel 41a (connection portion with the housing 81). The opening of the casing 81 of the ion generator 80 is aligned with the ion irradiation port 83. A gas introduction pipe 84 for introducing (supplying), for example, Ar gas as an ion source into the ion source chamber 82 is connected to the closed wall of the casing 81. A magnet 85 is installed on the outer periphery of the casing 81 of the ion generator 80. The magnet 85 is configured to generate a cusp magnetic field for confining plasma in the housing 81.

  A filament 86 is installed on the closed wall in the casing 81 (the end opposite to the ion irradiation port 83). A filament power source (DC power source) 87 that supplies power to the filament 86 is connected to the filament 86. The cathode of the filament power supply 87 is connected to the cathode of an arc power supply (DC power supply) 88 that forms plasma in the ion source chamber 82. A ground electrode 90, a deceleration electrode 92, and an acceleration electrode 95 are installed in this order from the ion irradiation port 83 side at the end of the housing 81 on the ion irradiation port 83 side. The ground electrode 90 is connected to the ground. The deceleration electrode 92 is connected to the cathode of a deceleration power source (DC power source) 91. The anode of the deceleration power supply 91 is connected to the ground. The acceleration electrode 95 is connected to the anode of an acceleration power source (DC power source) 94 through a resistor 93. The casing 81 and the anode of the arc power supply 88 are also connected to the anode of the acceleration power supply 94. The cathode of the acceleration power supply 94 is connected to the ground.

  The ground electrode 90, the deceleration electrode 92, and the acceleration electrode 95 are formed in a circular flat plate shape. Each of the ground electrode 90, the deceleration electrode 92, and the acceleration electrode 95 (hereinafter also referred to as each electrode) is formed with a large number of transmission ports 96 through which ions 97 formed as circular small holes are transmitted. The filament power supply 87, the arc power supply 88, the deceleration power supply 91, and the acceleration power supply 94 are controlled by the controller 240.

(Target holding part)
A target holding portion 46 is provided on the upper portion of the back wall of the vacuum vessel 41a (above the exhaust ports 53a and 53b). The target holding unit 46 is configured to hold a target group 48 in which a plurality of targets 47 are arranged. The target holding unit 46 includes a target base 45 that holds a target group 48 including, for example, eight targets 47 (47A to 47H), and a target rotation drive unit 44 that rotates the target base 45.

  The target pedestal 45 is configured in a conical shape, and is configured such that a plurality of targets 47 are arranged on the conical surface of the target pedestal 45. Specifically, the target base 45 is configured in, for example, an octagonal pyramid shape. Each side surface (eight side surfaces) of the target base 45 is configured to hold one of the predetermined targets 47 (47A to 47H) in the target group 48, respectively. In addition, the target holding | maintenance part 46 may be comprised not only in the case where it is formed in an octagonal frustum shape but in other polygonal frustum shapes.

The target rotation drive unit 44 is configured by a servo motor or the like. A rotation shaft 44 a of the target rotation drive unit 44 is rotatably supported in the sputtering chamber 41. The target rotation drive unit 44 rotates the target pedestal 45 so that the predetermined target 47 in the target group 48 is opposed to the ion irradiation port 83 of the ion generation unit 80 and is held by the substrate holding unit 50. It is configured to face the wafer 1. Thereby, the ions 97 generated by the ion generator 80 can be irradiated to the predetermined target 47 in the target group 48 and generated at the predetermined target 47 only by rotating the target base 45. It is possible to irradiate the upper surface of the wafer 1 with the sputtered particles 98. The target rotation drive unit 44 is controlled by the controller 240.

  The material of each target 47 in the target group 48 can be a different metal, an insulating material such as magnesium oxide (MgO), or the like, and is appropriately changed according to the type of thin film formed on the wafer 1. For example, when a magnetic thin film made of CoFeB (cobalt, iron, boron) is formed on the wafer 1, a CoFeB alloy can be used as the material of the target 47. When a magnetic thin film made of PtFeP (platinum, iron, phosphorus) is formed on the wafer 1, a PtFeP alloy can be used as the material of the target 47. Depending on the type of thin film, the target 47 may be made of a quaternary or quaternary alloy obtained by further mixing Cu, Ni, or the like with the above ternary alloy. Further, as a material of the target 47, a simple substance such as Fe, Cu, or Ni may be used. Further, the target 47 is made of, for example, an alloy chip such as an FeP alloy chip, an FeCu alloy chip, an FeNi alloy chip, an FeCuP alloy chip, or an FeNiP alloy chip on a member made of Co or Pt with a predetermined composition. You may comprise as a composite target mounted so that it may become a ratio. Of course, the target 47 may be made of Ta (tantalum), Ti (titanium), Ru (ruthenium) or the like, or may be binary NiFe (nickel, iron), CoFe (cobalt, iron). ), MnIr (manganese, iridium) may be used.

  The target pedestal 45 is configured to hold the adjacent targets 47 so as to be separated from each other. Thereby, it is possible to prevent the ions 97 from the ion supply unit 80 from being simultaneously irradiated to the adjacent target 47. Furthermore, it is possible to prevent a plurality of types of sputtered particles 98 from being simultaneously generated and irradiated onto the wafer 1. Further, it is possible to prevent deterioration of the film quality of the thin film formed on the wafer 1 by the mixed sputtered particles 98 generated by mixing the materials between the targets 47. Note that a partition plate (not shown) may be provided between the targets 47 to prevent the mixing of ions 97 or sputtered particles 98 between the targets 47.

(Regulating member holding part)
A regulating member holding part 100 is provided at the upper part of the front wall of the vacuum vessel 41a (above the opening 41b). The regulating member holding unit 100 is configured to hold a plurality of regulating members 101 that regulate the incidence of the sputtered particles 98 on the wafer 1. The restricting member holding part 100 includes a restricting member base 102 for arranging a plurality of restricting members 101, for example, eight restricting members 101 (101A to 101H), and a restricting member rotation driving part 103 for rotating the restricting member base 102. . The restricting member rotation drive unit 103 is configured by a servo motor or the like. A rotation shaft 103 a of the regulating member rotation drive unit 103 is rotatably supported in the sputtering chamber 41. Further, the rotation shaft 103a of the restricting member holding unit 100 and the rotation shaft 44a of the target holding unit 46 are configured to be parallel to each other. The restriction member rotation drive unit 103 is configured to rotate the restriction member base 102 in synchronization with the rotation of the target rotation drive unit 44. Accordingly, the restriction member holding unit 100 can insert a predetermined restriction member 101 (101 </ b> A to 101 </ b> H) corresponding to the predetermined target 47 between the wafer 1 and the predetermined target 47. The restricting member rotation driving unit 103 is controlled by the controller 240.

The regulating member 101 is inserted so as to shield a part of the incident path of the sputtered particles 98 from the predetermined target 47 by the rotation of the regulating member holding unit 100. FIG. 6 is a schematic view of the wafer 1 as viewed from the target 47 side according to the first embodiment of the present invention. As shown in FIG. 6, the regulating member 101 is inserted between the wafer 1 and the predetermined target 47 so as to shield a part on the wafer 1, and shields a part of the incident path of the sputtered particles 98. Thereby, the regulating member 101 can partially reduce the incident amount of the sputtered particles 98 on the wafer 1.

  The shape or size of the regulating member 101 is appropriately adjusted depending on the material of the target 47 and the like. For example, depending on the material of the target 47, the radiation characteristics of the sputtered particles 98 incident on the wafer 1 are different, and the incident amount of the sputtered particles 98 on the wafer 1 may become uneven in the plane. And the film thickness of the thin film to form into a film may become thick in the outer peripheral part of the wafer 1, and may become thin near the center part of the wafer 1 (refer FIG. 8). In this case, the shape of the regulating member 101 is configured such that the width of the portion inserted near the outer peripheral portion of the wafer 1 is wide and the width of the portion inserted near the center portion of the wafer 1 is narrow. As a result, the incident amount near the outer periphery of the wafer 1 and the incident amount near the center of the wafer 1 are equalized (in-plane uniformity of the incident amount of the sputtered particles 98 on the wafer 1 is improved). In-plane film thickness uniformity of the thin film can be improved. For example, depending on the material of the target 47, the film thickness of the formed thin film may be thin at the outer peripheral portion of the wafer 1 and thick near the center of the wafer 1. In such a case, the shape of the regulating member 101 is configured such that the width of the portion inserted near the outer periphery of the wafer 1 is narrow and the width of the portion inserted near the center of the wafer 1 is wide. Thereby, the in-plane uniformity of the incident amount of the sputtered particles 98 on the wafer 1 can be improved, and the in-plane film thickness uniformity of the thin film can be improved.

The regulating member 101 can be made of a non-metallic material such as quartz (SiO ₂ ) or silicon carbide (SiC). In such a case, metal contamination in the wafer 1 and the processing chamber 40 can be suppressed. Further, the regulating member 101 may be made of a material that is difficult to be sputtered, such as W (tungsten).

(4) Substrate Processing Step Next, a substrate processing step that is performed as a step of manufacturing a semiconductor device such as a magnetoresistive element memory will be described according to the flowchart of FIG. 7 mainly with reference to FIGS. To do. In this step, a CoFeB thin film, a MgO thin film, and a Ru thin film are deposited on the wafer 1 in this order. FIG. 7 is a flowchart showing a substrate processing process according to the first embodiment of the present invention. The substrate processing step is performed by the substrate processing apparatus according to the above configuration.

(Process for loading wafer (step S1))
First, the wafer 1 is loaded from the loading / unloading port 43 into the film forming chamber 42 previously depressurized to a predetermined pressure, and placed on the substrate holding unit 50 in a horizontal posture.

(Process for holding wafer (step S2))
The substrate holder 50 chucks and holds the wafer 1 so that the sputtered particles 98 generated by the predetermined target 47 are incident thereon. Then, as shown in FIGS. 3 to 5, the substrate holding unit 50 is brought into a vertical posture (a posture in which the upper surface of the wafer 1 faces the target holding unit 46) by the tilt mechanism 52. Subsequently, the substrate holding unit 50 is rotated by the rotation mechanism 51 to rotate the wafer 1. The rotation of the wafer 1 is continued until a wafer unloading process described later.

  Subsequently, after the loading / unloading port 43 is closed by the gate valve 35 (see FIG. 1 and FIG. 2), the inside of the sputtering chamber 41 and the film forming chamber 42 are evacuated by the cryopump 55a and the turbo molecular pump 55b, For example, the pressure is reduced to 0.1 to 0.01 Pa.

(Step of forming a CoFeB thin film)
Subsequently, a CoFeB thin film is formed on the wafer 1 by performing the following steps 3 to 6.

(Step of rotating the target group (step S3))
Then, the target pedestal 45 is rotated by a predetermined angle by the target rotation driving unit 44 to rotate the target group 48, and a predetermined target 47, for example, a target 47 made of a CoFeB alloy (also referred to as a CoFeB target) is ionized. It is made to oppose the ion irradiation port 83 of the generation | occurrence | production part 80, and is made to oppose the upper surface of the wafer 1 hold | maintained at the board | substrate holding | maintenance part 50. FIG.

(Step of inserting the regulating member (step S4))
Next, the restriction member rotation drive unit 103 rotates the restriction member base 102 by a predetermined angle, and the predetermined restriction member 101 corresponding to the predetermined target 47 is inserted between the wafer 1 and the predetermined target 47. . The regulating member 101 is inserted between the wafer 1 and the predetermined target 47 so as to shield a part on the wafer 1, and shields a part of the incident path of the sputtered particles 98. Thereby, the restricting member 101 can partially reduce the incident amount of the sputtered particles 98 generated on the wafer 1 in step S6 described later.

(Step of generating ions (step S5))
Subsequently, the Ar gas is converted into plasma by the ion generator 80 to generate Ar ions 97. Specifically, Ar gas is supplied from the gas introduction tube 84 into the ion source chamber 82 of the ion generator 80 at a predetermined flow rate, for example, 2 to 20 sccm. Then, the filament power supply 87 is turned on, and thermoelectrons are emitted from the filament 86. Then, the arc power supply 88 is turned on, electrons are moved in the ion source chamber 82 to collide with Ar atoms, and the Ar gas supplied into the ion source chamber 82 is turned into plasma. Then, the deceleration power supply 91 and the acceleration power supply 94 are turned on, the acceleration electrode 95 is set to a positive potential, and the deceleration electrode 92 is set to a negative potential. As a result, an Ar ion 97 is drawn out from the transmission port 96 group into the film forming chamber 42 by an electric field generated by a potential difference between the acceleration electrode 95, the deceleration electrode 92, and the ground electrode 90 to generate ions 97 (ion beams). The potential difference between the deceleration electrode 92 and the ground electrode 90 serves to prevent electrons in the sputtering chamber 41 from entering the ion source chamber 82.

(Film formation process (step S6))
Ions 97 drawn from the ion generator 80 into the film forming chamber 42 through the transmission port 96 group are irradiated to a predetermined target 47 (here, a target made of a CoFeB alloy). Then, sputtered particles 98 such as molecules constituting the CoFeB alloy jump out of the predetermined target 47 (CoFeB target). Then, the sputtered particles 98 that have jumped out enter the upper surface of the wafer 1 and are adsorbed (deposited), and a CoFeB thin film, for example, a magnetic thin film is formed on the upper surface of the wafer 1.

  As described above, depending on the material of the target 47, the radiation characteristics of the sputtered particles 98 incident on the wafer 1 are different, and the incident amount of the sputtered particles 98 on the wafer 1 may become uneven in the plane. is there. And the film thickness of the thin film to form into a film may become thick in the outer peripheral part of the wafer 1, and may become thin near the center part of the wafer 1 (refer FIG. 8).

  On the other hand, in the present embodiment, in step S4, a predetermined regulating member 101 corresponding to the predetermined target 47 is inserted between the wafer 1 and the predetermined target 47 in advance. The shape or size of the regulating member 101 is appropriately adjusted depending on the material of the target 47 and the like. That is, when the thickness of the CoFeB thin film is thick at the outer peripheral portion of the wafer 1 and thin near the center portion of the wafer 1, the regulating member 101 inserted between the wafer 1 and the target 47 (CoFeB target). The width of the portion inserted near the outer peripheral portion of the wafer 1 is widened and the width of the portion inserted near the center portion of the wafer 1 is narrowed. As a result, the incident amount near the outer periphery of the wafer 1 and the incident amount near the center of the wafer 1 are equalized (in-plane uniformity of the incident amount of the sputtered particles 98 on the wafer 1 is improved). In-plane film thickness uniformity of the CoFeB thin film can be improved.

  Further, since the targets 47 are held apart from each other, it is possible to prevent the ions 97 from the ion supply unit 80 from being simultaneously irradiated to the adjacent targets 47. It is possible to prevent a plurality of types of sputtered particles 98 from being simultaneously generated and irradiated onto the wafer 1. Further, it is possible to prevent deterioration of the film quality of the thin film formed on the wafer 1 by the mixed sputtered particles 98 generated by mixing the materials between the targets 47.

  When a predetermined time (for example, 30 to 180 seconds) elapses and a CoFeB thin film having a desired film thickness is formed on the upper surface of the wafer 1, the supply of ions 97 by the ion generator 80 is stopped, and the film forming process is ended.

(Process for forming MgO thin film)
Subsequently, the above-described steps S3 to S6 are performed again, so that another thin film, for example, an MgO thin film that is an insulating thin film is deposited on the CoFeB thin film (in the case of “No” in step S7).

  Specifically, the target pedestal 45 is rotated again by a predetermined angle by the target rotation driving unit 44 so that the target 47 made of MgO (also referred to as MgO target) is opposed to the ion irradiation port 83 and the wafer 1 It is made to oppose to an upper surface (step S3). Then, the restriction member rotation drive unit 103 rotates the restriction member base 102 again by a predetermined angle, and the predetermined restriction member 101 corresponding to the MgO target is inserted between the wafer 1 and the MgO target (step S4). ). Next, Ar ions 97 are generated in the ion generator 80, and the ArO 97 is irradiated to the MgO target (step S5). Then, the sputtered particles 98 that have jumped out of the MgO target are incident on the upper surface of the wafer 1, and an MgO thin film is formed on the CoFeB thin film on the wafer 1 (step S6).

(Step of forming a Ru thin film)
Subsequently, by performing the above steps S3 to S6 again, another thin film, for example, a Ru thin film that is a nonmagnetic thin film is deposited on the MgO thin film (in the case of “No” in step S7). .

  Specifically, the target pedestal 45 is rotated again by a predetermined angle by the target rotation driving unit 44 so that the target 47 (also referred to as Ru target) made of Ru is opposed to the ion irradiation port 83 and the wafer 1 It is made to oppose the upper surface (step S3). Then, the restriction member rotation drive unit 103 rotates the restriction member base 102 again by a predetermined angle, and the predetermined restriction member 101 corresponding to the Ru target is inserted between the wafer 1 and the Ru target (step S4). ). Next, Ar ions 97 are generated by the ion generation unit 80, and the Ru target 97 is irradiated with the Ar ions 97 (step S5). Then, the sputtered particles 98 jumping out from the Ru target are incident on the upper surface of the wafer 1, and a Ru thin film is formed on the MgO thin film of the wafer 1 (step S6).

(Wafer Unloading Step (Step S8))
Then, when there is no thin film to be formed next and the process is finished (in the case of “Yes” in step S7), while Ar gas is supplied as a purge gas into the sputtering chamber 41 and the film forming chamber 42, The gas atmosphere in the film formation chamber 42 is exhausted. When the predetermined time has elapsed, the rotation mechanism 51 is stopped and the rotation of the wafer 1 is stopped. Then, the wafer 1 is unloaded and the substrate processing step is completed. Thereafter, the loading / unloading port 43 is opened by the gate valve 35 (see FIGS. 1 and 2), and the processed wafer 1 held in the substrate holding unit 50 is unloaded from the loading / unloading port 43.

(5) Effects according to the present embodiment According to the present embodiment, the following one or more effects are achieved.

(A) According to the present embodiment, the plurality of regulating members 101 that regulate the incidence of the sputtered particles 98 on the wafer 1 are held, and the predetermined regulating member 101 corresponding to the predetermined target 47 is attached to the wafer 1 and the predetermined target. 47 is provided with a restricting member holding part 100 inserted between them. During film formation, the target rotation drive unit 44 rotates the target pedestal 45 by a predetermined angle to select a predetermined target 47, and the restriction member rotation drive unit 103 moves the restriction member pedestal 102 to a predetermined value. The predetermined restricting member 101 is inserted between the wafer 1 and the predetermined target 47 by being rotated by an angle. Thereby, the sputtered particles 98 incident on the wafer 1 are regulated according to the predetermined target 47, and the in-plane film thickness uniformity of the thin film formed on the wafer 1 can be improved.

  (B) According to the present embodiment, the shape of the regulating member 101 is appropriately adjusted according to the material of the target 47 so as to shield a part of the incident path of the sputtered particles 98 from the predetermined target 47. For example, when trying to improve the in-plane uniformity of a MgO thin film with a thick film at the outer periphery of the wafer 1 and a thin film near the center, the width is narrow near the center of the wafer 1 and the outer periphery of the wafer 1 is reduced. The regulating member 101 having a wide shape near the portion is used. Also, for example, when trying to improve the in-plane uniformity of a CoFeB thin film having a thick upper portion and a lower lower portion, the width is narrow near the upper portion of the wafer 1 and near the lower portion. A regulating member 101 having a wide shape is used. Thereby, the incident amount of the sputtered particles 98 on the wafer 1 can be reduced. As a result, the uniformity of the in-plane film thickness of the thin film formed on the wafer 1 can be improved.

  For reference, an example of the uniformity of the in-plane film thickness distribution of the thin film depending on the material of the target 47 is shown in FIG. FIG. 8 shows Ta (tantalum), CoFeB (cobalt, iron, boron), Ti (titanium), MgO (magnesium oxide), NiFe (nickel, iron), CoFe (cobalt, iron), Ru (ruthenium) as target materials. , MnIr (manganese, iridium) is a diagram showing a specific example of the uniformity of the in-plane film thickness distribution of the thin film due to the difference in material. In FIG. 8, the film thickness of the thin film formed on the wafer 1 is shown by color intensity. In FIG. 8, the colors are displayed differently depending on the thickness of the thin film. For example, an MgO thin film, which is an insulating thin film, for example, has an in-plane uniformity of ± 2.3%, and the wafer 1 has a thick outer peripheral portion and a thin central portion. In addition, the CoFeB thin film, which is a magnetic thin film, has in-plane uniformity of ± 1.2%, and the film thickness on the upper side of the wafer 1 is thick and the film thickness on the lower side is thin. Thus, when the material of the target 47 is different, the film thickness distribution of the thin film formed on the wafer 1 is different due to the sputtered particles 98 from the target 47. This is because the radiation characteristic of the target 47 differs depending on the target material, that is, the incident amount of the sputtered particles 98 is not uniform over the surface of the wafer 1.

  On the other hand, in this embodiment, a regulating member 101 having a predetermined shape corresponding to the predetermined target 47 is configured to be inserted between the wafer 1 and the predetermined target 47. Then, the shape and size of the regulating member 101 are configured to be adjusted as appropriate according to the predetermined target 47. For example, when trying to improve the in-plane uniformity of a MgO thin film with a thick film at the outer periphery of the wafer 1 and a thin film near the center, the width is narrow near the center of the wafer 1 and the outer periphery of the wafer 1 is reduced. It is preferable to use a regulating member 101 having a wide shape near the portion. Also, for example, when trying to improve the in-plane uniformity of a CoFeB thin film having a thick upper portion and a lower lower portion, the width is narrow near the upper portion of the wafer 1 and near the lower portion. It is preferable to use a regulating member 101 having a wide shape. Thereby, the sputtered particles 98 incident on the wafer 1 are regulated according to the radiation characteristics of the target 47, and the in-plane film thickness uniformity of the thin film formed on the wafer 1 can be improved.

  For reference, the configuration of the substrate processing apparatus having only one regulating member 101 will be described with reference to FIG. As shown in FIG. 9, the film forming chamber 42 includes a regulating member base 102 </ b> B that holds one regulating member 101, and a regulating member linear motion drive unit 104 that linearly moves the regulating member base 102 </ b> B. A holding unit 100B is provided. When a thin film is formed on the wafer 1 using the apparatus shown in FIG. 9, the restriction member base 102 </ b> B is moved linearly by the restriction member linear movement drive unit 104, and the restriction member base 102 </ b> B is perpendicular to the film formation chamber 42. And one restriction member 101 is inserted between the wafer 1 and a predetermined target 47.

  However, in the apparatus shown in FIG. 9, it is difficult to easily change the shape and size of the regulating member 101 according to the material of the target 47. If the shape and size of the regulating member 101 are not changed according to the material of the target 47, it is difficult to make the in-plane film thickness of the thin film formed on the wafer 1 uniform. If an attempt is made to form a multilayer film by using a plurality of apparatuses shown in FIG. 9 according to the material of the target 47, the occupied area of the apparatus increases and the production cost may increase. Furthermore, there is a risk that unintentional residual oxygen and reaction products with water are generated when the wafer 1 is transferred between the processing furnaces.

(C) According to this embodiment, the target holding part 46 provided with the target base 45 holding the target group 48 and the target rotation drive part 44 which rotates the target base 45 is provided. As a result, by simply rotating the target base 45, the target group 48 can be rotated and the predetermined target 47 can be easily opposed to the ion irradiation port 83 and can be opposed to the upper surface of the wafer 1.

(D) According to the present embodiment, the target pedestal 45 is configured to have a conical shape, and a plurality of targets 47 are arranged on the conical surface of the target pedestal 45. Further, the target pedestal 45 is configured to hold the targets 47 adjacent to the conical surface apart from each other. Thereby, it is possible to prevent the ions 97 from the ion supply unit 80 from being simultaneously irradiated to the adjacent target 47. Furthermore, it is possible to prevent a plurality of types of sputtered particles 98 from being simultaneously generated and irradiated onto the wafer 1. Further, it is possible to prevent deterioration of the film quality of the thin film formed on the wafer 1 by the mixed sputtered particles 98 generated by mixing the materials between the targets 47. Note that a partition plate (not shown) may be provided between the targets 47 to prevent the mixing of ions 97 or sputtered particles 98 between the targets 47.

(E) According to the present embodiment, the sputtering chamber 41 in which the ion generation unit 80, the target holding unit 46, and the regulating member holding unit 100 are provided, and the film formation in which the substrate holding unit 50 is provided in communication with the sputtering chamber 41. A chamber 42. That is, the sputtering chamber 41 for generating the sputtered particles 98 and the film forming chamber 42 for forming a film on the wafer 1 are configured separately. That is, the processing chamber 40 includes a sputtering chamber 41, a film forming chamber 42, and an ion generator 80. Thereby, it is easy to adjust and clean each independently. Further, since the sputtered particles 98 and ions 97 from the sputtering chamber 41 can be prevented from scattering into the film forming chamber 42, contamination in the film forming chamber 42 can be prevented.

(F) According to this embodiment, the regulating member holding part 100 is provided on the side wall of the sputtering chamber 41 so that the prescribed target 47 and the prescribed regulating member 101 face each other. Further, the rotation shaft 103 a of the restricting member holding unit 100 and the rotation shaft 44 a of the target holding unit 46 are parallel. This facilitates the adjustment of the positional relationship between the target holding portion 46, the predetermined regulating member 101, and the wafer 1, and allows the amount of sputtered particles 98 incident on the wafer 1 to be optimized. It is easy to adjust the thickness of the thin film.

<Second Embodiment>
FIG. 10 is a longitudinal sectional view of the first processing furnace 33 according to the second embodiment of the present invention. FIG. 11 is a longitudinal sectional view of the first processing furnace 33 according to the second embodiment of the present invention. The present embodiment is different from the first embodiment in that the regulating member base 102C on which a plurality of regulating members 101 are arranged is linearly moved. Other configurations are the same as those in the first embodiment.

  That is, as shown in FIGS. 10 and 11, the restricting member holding portion 100 </ b> C includes a restricting member linear motion drive portion 104 </ b> C that linearly moves the restricting member base 102 </ b> C on which a plurality of restricting members 101 are arranged. The regulating member linear motion drive unit 104 </ b> C is configured to be able to move the regulating member base 102 </ b> C in the vertical direction and the horizontal direction with respect to the film forming chamber 42. Reference numeral 111 denotes a positioning unit that positions the regulating member base 102 </ b> C and the regulating member linear drive unit 104 </ b> C at predetermined positions in the horizontal direction with respect to the film forming chamber 42. The restricting member holding portion 100 </ b> C is provided in a vacuum-tight casing (not shown) communicating with the film forming chamber 42. The restricting member holding portion 100C is provided above and below the film forming chamber 42. The upper holding part 110a provided in the upper part of the film forming chamber 42 holds the regulating members 101A to 101D on the regulating member base 102C. The lower holding part 110b provided in the lower part of the film forming chamber 42 holds the regulating members 101E to 101H on the regulating member base 102C.

  Then, similarly to the first embodiment, the regulating member holding unit 100C is either the upper holding unit 110a or the lower holding unit 110b depending on the predetermined target 47 in the step of inserting the regulating member 101. Drive one. Then, either one of the upper holding unit 110a and the lower holding unit 110b is moved in the horizontal direction with respect to the film forming chamber 42, and is positioned in the horizontal direction by the positioning unit 111, and moved in the vertical direction. Let Thereby, a predetermined regulating member 101 corresponding to the predetermined target 47 can be inserted between the predetermined target 47 and the wafer 1. In FIG. 11, a dotted line indicates a state where the lower holding portion 110 b is driven and moved in the horizontal direction with respect to the film forming chamber 42.

  According to the present embodiment, the regulation member linear motion drive unit 104C that holds the regulation member base 102C on which a plurality of regulation members 101 are arranged is linearly movable. Thereby, a predetermined regulating member 101 corresponding to the predetermined target 47 can be inserted between the wafer 1 and the predetermined target 47. As a result, the same effect as that of the first embodiment can be obtained.

  In the present embodiment, a plurality of regulating members 101 are arranged in the horizontal direction with respect to the film forming chamber 42 to constitute the regulating member holding portion 100C. However, the present invention is not limited to this, and the film forming chamber 42 is not limited thereto. Alternatively, a plurality of regulating members 101 may be arranged in the vertical direction. In this case, although not shown, for example, the restriction member pedestal is configured so that a plurality of restriction members 101 are arranged in a ladder shape, and the restriction member pedestal is configured to move only in the vertical direction with respect to the film forming chamber 42. Thereby, the restricting member direct acting drive unit 104C can be further simplified.

<Other Embodiments of the Present Invention>
In the present embodiment, one restriction member 101 is provided for each target 47, but some of the restriction members 101 may be shared by a plurality of targets 47. That is, when the emission characteristics of the sputtered particles 98 emitted from the target 47 are the same or similar, the predetermined regulating member 101 may be shared. In such a case, the substrate processing apparatus can be downsized and the manufacturing cost can be reduced.

In the above-described embodiment, a step of forming a CoFeB thin film that is a magnetic thin film is performed, and then a step of forming a MgO thin film that is an insulating thin film is performed, and then a step of forming a Ru thin film is performed. However, the present invention is not limited to this. That is, the thin film to be formed is not limited to a CoFeB thin film, a MgO thin film, a Ru thin film, etc.
It may be a tFeP thin film or the like. Furthermore, the present invention is not limited to a ternary thin film such as a CoFeB thin film or a PtFeP thin film, but can also be applied to a case where a quaternary or quaternary thin film mixed with Cu, Ni, or the like is formed. In addition, the present invention can be suitably applied to the case where a laminated film of two layers or less is formed on the wafer 1 or the case where a laminated film of four layers or more is formed.

  In addition to the Si wafer, the substrate on which the thin film is formed may be a quartz glass substrate, a crystallized glass substrate, an MgO substrate, or the like. Further, the present invention is not limited to a substrate processing apparatus that processes a wafer substrate such as a semiconductor manufacturing apparatus according to the present embodiment, but is also a substrate processing apparatus that processes a substrate such as a printed wiring board, a liquid crystal panel, a magnetic disk, or a compact disk. Can also be suitably applied.

  As mentioned above, although embodiment of this invention was described concretely, this invention is not limited to the above-mentioned embodiment, It can change variously in the range which does not deviate from the summary.

<Preferred embodiment of the present invention>
Hereinafter, preferred embodiments of the present invention will be additionally described.

According to one aspect of the invention,
An ion generator that generates ions;
A target holding unit that holds a target group in which a plurality of targets are arranged, and rotates the target group so that the ions are incident on a predetermined target of the target group;
A substrate holder for holding the substrate so that sputtered particles generated at the predetermined target are incident thereon;
A regulating member holding unit that holds a plurality of regulating members that regulate incidence of the sputtered particles on the substrate, and inserts a prescribed regulating member corresponding to the given target between the substrate and the given target; ,
A substrate processing apparatus is provided.

  More preferably, the restriction member shields a part of the incident path of the sputtered particles so as to reduce the amount of the sputtered particles incident on the substrate.

  More preferably, the shape or size of the regulating member is appropriately adjusted depending on the material of the target.

  Preferably, the target holding unit includes a target base that holds the target group, and a target rotation driving unit that rotates the target base.

  More preferably, the target pedestal is configured in a conical shape, and is configured such that a plurality of the targets are arranged on the conical surface of the target pedestal.

  More preferably, the target pedestal is configured to hold the targets adjacent to the conical surface apart from each other.

  More preferably, the restricting member holding part includes a restricting member pedestal for arranging a plurality of restricting members, and a restricting member turning drive part for turning the restricting member pedestal.

  More preferably, the restricting member holding part includes a restricting member pedestal for arranging a plurality of restricting members, and a restricting member direct acting drive part for directly moving the restricting member pedestal.

  More preferably, a sputtering chamber in which the ion generation unit, the target holding unit, and the regulating member holding unit are provided, and a film forming chamber in communication with the sputtering chamber and in which the substrate holding unit is provided.

  More preferably, the ion generation unit is provided on an outer periphery of the sputtering chamber, and can irradiate ions from an irradiation port of the ion generation unit toward the predetermined target held by the target holding unit.

  More preferably, the restricting member holding portion is provided on a side wall of the sputtering chamber so that the predetermined target and the predetermined restricting member face each other.

  More preferably, the rotation shaft of the restricting member holding portion and the rotation shaft of the target holding portion are parallel.

According to another aspect of the invention,
A step of generating ions by an ion generator;
A step of holding a target group in which a plurality of targets are arranged by a target holding unit, and rotating the target group so that the ions are incident on a predetermined target of the target group;
A step of holding the substrate so that sputtered particles generated at the predetermined target are incident by the substrate holding unit;
A plurality of regulating members that regulate the incidence of the sputtered particles on the substrate are held by the regulating member holding unit, and a predetermined regulating member corresponding to the predetermined target is inserted between the substrate and the predetermined target. A process of
A method of manufacturing a semiconductor device having the above is provided.

1 Wafer (substrate)
46 target holding unit 48 target group 47 (47A to 47H) target 50 substrate holding unit
80 Ion generator 97 Ion (ion beam)
98 Sputtered particle 100 Control member holding part 101 (101A-101H) Control member

Claims (2)

An ion generator that generates ions;
A target holding unit that holds a target group in which a plurality of targets are arranged, and rotates the target group so that the ions are incident on a predetermined target of the target group;
A substrate holder for holding the substrate so that sputtered particles generated at the predetermined target are incident thereon;
A regulating member holding unit that holds a plurality of regulating members that regulate incidence of the sputtered particles on the substrate, and inserts a prescribed regulating member corresponding to the given target between the substrate and the given target; ,
A substrate processing apparatus comprising: A step of generating ions by an ion generator;
A step of holding a target group in which a plurality of targets are arranged by a target holding unit, and rotating the target group so that the ions are incident on a predetermined target of the target group;
A step of holding the substrate so that sputtered particles generated at the predetermined target are incident by the substrate holding unit;
A plurality of regulating members that regulate the incidence of the sputtered particles on the substrate are held by the regulating member holding unit, and a predetermined regulating member corresponding to the predetermined target is inserted between the substrate and the predetermined target. A process of
A method for manufacturing a semiconductor device comprising: