JP2011168828A - Substrate treatment device and method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve quality of a thin film to be formed on a substrate. <P>SOLUTION: A substrate treatment device includes: an ion generating unit for generating ions; a target holding unit which holds a target group having a plurality of targets arrayed and turns the target group so as to allow ions to enter a predetermined target in the target group; a substrate holding unit which holds a substrate so that sputtered particles generated in the predetermined target is made incident; a scattering suppressing unit which is held by the target holding unit and which includes first openings formed at positions opposing to the respective targets, and a plurality of barrier walls partitioning adjoining targets, and suppresses sputtered particles generated in a predetermined target from scattering toward other targets; and an incidence suppressing unit which is disposed between the scattering suppressing unit and the substrate, has a second opening formed therein to expose a predetermined target and is configured to cover the first openings facing other targets, and suppresses sputtered particles generated in the predetermined target from being made incident on other targets. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus for processing a substrate and a method for manufacturing a semiconductor device.

  As one step of a method for manufacturing a semiconductor device such as a magnetoresistive element memory (MRAM (Magnetorescent Random Access Memory)), for example, a substrate processing step of forming a plurality of thin films on a substrate is performed. A conventional substrate processing apparatus that performs such a process includes an ion generating unit that generates ions, a target holding unit that holds a target so that ions are incident, and a substrate that allows sputtered particles generated on the target to be incident And a substrate holding part for holding the substrate.

  When a plurality of types of thin films are continuously formed on a substrate, a target group in which a plurality of targets of different materials and the like are arranged is rotated, and ions are applied to a predetermined target according to the type of thin film to be formed. Incident light is incident. Then, the sputtered particles generated when ions are incident on a predetermined target are incident on the substrate, whereby a thin film is formed on the substrate. Subsequently, the target group is rotated again and positioned so that ions are incident on another target. Then, other types of thin films are formed on the previously formed thin film by causing the sputtered particles generated when ions are incident on the other target to be incident on the substrate. By continuously performing the film formation in this way, a plurality of types of thin films are continuously formed in multiple layers (for example, Patent Documents 1 and 2).

Japanese Patent Laid-Open No. 1-205071 JP 2008-75163 A

  However, as described above, a plurality of targets of different materials are arranged adjacent to each other in the target group. For this reason, sputtered particles generated at a predetermined target may scatter to other targets, or sputtered particles that have rebounded from other parts of the substrate may enter other targets and adhere as unintended impurities. There was a case. When film formation is performed using the target to which the impurities are adhered, there are cases where unintended sputtered particles enter the substrate together with sputtered particles of a desired material. As a result, impurities may be mixed in the thin film (referred to as cross-contamination), and the film quality of the thin film to be formed may deteriorate.

  An object of the present invention is to provide a substrate processing apparatus and a semiconductor device manufacturing method capable of improving the film quality of a thin film formed on a substrate.

According to one aspect of the invention,
An ion generator that generates ions;
A target holding unit that holds a target group in which a plurality of targets are arranged, and rotates the target group so that the ions are incident on a predetermined target of the target group;
A substrate holding part for holding a substrate for holding a substrate so that sputtered particles generated at the predetermined target are incident thereon;
A first opening is formed in a portion that is held by the target holding portion and faces each of the targets, and includes a plurality of partition walls that partition the adjacent targets, and the sputter generated at the predetermined target. A scattering suppression unit for suppressing particles from scattering to other targets;
A second opening is provided between the scattering suppression portion and the substrate, and the second opening is formed to expose the predetermined target, and the first opening facing the other target is covered. An incident suppression unit that suppresses the sputtered particles generated at the predetermined target from entering the other target;
A substrate processing apparatus is provided.

According to another aspect of the invention,
A step of generating ions by an ion generator;
A step of holding a target group in which a plurality of targets are arranged by a target holding unit, and rotating the target group so that the ions are incident on a predetermined target of the target group;
A step of holding the substrate so that sputtered particles generated at the predetermined target are incident by the substrate holding unit;
Forming the thin film on the substrate by causing the sputtered particles to enter the substrate, and forming the thin film,
A first opening is formed in a portion that is held by the target holding portion and faces each of the targets, and the scattering target has a plurality of partition walls that partition the adjacent targets. While suppressing the generated sputtered particles from scattering to other targets,
A second opening is provided between the scattering suppression portion and the substrate, and the second opening is formed to expose the predetermined target, and the first opening facing the other target is covered. A semiconductor device manufacturing method for suppressing sputtered particles generated at the predetermined target from entering the other target is provided by the incident suppression unit.

  According to the substrate processing apparatus and the semiconductor device manufacturing method of the present invention, it is possible to improve the film quality of the thin film formed on the substrate.

1 is a cross-sectional view of a substrate processing apparatus according to a first embodiment of the present invention. 1 is a longitudinal sectional view of a substrate processing apparatus according to a first embodiment of the present invention. It is a longitudinal section of the 1st processing furnace concerning a 1st embodiment of the present invention. 1 is a cross-sectional view of a first processing furnace according to a first embodiment of the present invention. It is the top view which looked at the target holding part which concerns on the 1st Embodiment of this invention from the D direction of FIG. It is a longitudinal cross-sectional view of the target rotation drive part which concerns on the 1st Embodiment of this invention, a target holding part, a scattering suppression part, and an incident suppression part. It is the top view which looked at the scattering suppression part which concerns on the 1st Embodiment of this invention from the E direction of FIG. It is the top view which looked at the entrance suppression part concerning the 1st Embodiment of this invention from the F direction of FIG. It is a flow figure showing a substrate processing process concerning a 1st embodiment of the present invention. It is a top view of the target holding part which concerns on the 2nd Embodiment of this invention. It is a longitudinal cross-sectional view of the 1st processing furnace which concerns on the 2nd Embodiment of this invention.

<First Embodiment of the Present Invention>
(1) Configuration of Substrate Processing Apparatus First, a schematic configuration example of a substrate processing apparatus according to a first embodiment of the present invention will be described with reference to FIGS. In a substrate processing apparatus to which the present invention is applied, a FOUP (Front Opening Unified Pod: hereinafter referred to as a pod) is used as a carrier for transporting a wafer 1 as a substrate. In the following description, front, rear, left and right are based on FIG. 1, and top and bottom are based on FIG. That is, with respect to the paper surface shown in FIG. 1, the front is below the paper surface, the rear is above the paper surface, the left and right are the left and right sides of the paper surface, and the top and bottom are the left and right sides of the paper surface shown in FIG. And

(First transfer chamber)
As shown in FIGS. 1 and 2, the substrate processing apparatus includes a first transfer chamber 12. The first transfer chamber 12 has a load lock chamber structure that can withstand a pressure (negative pressure) less than atmospheric pressure such as a vacuum state. The casing 11 of the first transfer chamber 12 is formed in a box shape in which the plan view is hexagonal and the upper and lower ends are closed. A first substrate transfer machine 13 for transferring the wafer 1 under a negative pressure is installed in the first transfer chamber 12. The first substrate transfer machine 13 is configured to be lifted and lowered by the elevator 14 while maintaining the airtightness in the first transfer chamber 12.

(Spare room)
The two side walls located on the front side of the six side walls of the housing 11 are connected to the carry-in spare chamber 15 and the carry-out spare chamber 16 via gate valves 17 and 18, respectively. . The spare chamber 15 and the spare chamber 16 are each configured to have a load lock chamber structure that can withstand negative pressure. Further, a loading substrate table 19 is installed in the preliminary chamber 15. In addition, the spare chamber 16 is provided with a substrate table 20 for carrying out.

(Second transfer chamber)
A second transfer chamber 22 used at substantially atmospheric pressure is connected to the front sides of the reserve chamber 15 and the reserve chamber 16 via gate valves 23 and 24. A second substrate transfer machine 25 for transferring the wafer 1 is installed in the second transfer chamber 22. The second substrate transfer machine 25 is configured to be moved up and down by an elevator 26 installed in the second transfer chamber 22 and is configured to be reciprocated in the left-right direction by a linear actuator 27. Yes.

  A notch or orientation flat aligning device 28 is installed on the left side of the second transfer chamber 22 (see FIG. 1). A clean unit 29 for supplying clean air is installed above the second transfer chamber 22 (see FIG. 2).

  On the front side of the housing 21 of the second transfer chamber 22, a wafer loading / unloading port 30 for loading / unloading the wafer 1 into / from the second transfer chamber 22 and a pod opener 31 are installed. An IO stage 32 is installed on the opposite side of the pod opener 31 across the wafer loading / unloading port 30, that is, on the outside of the housing 21. The pod opener 31 includes a closure 31a capable of opening and closing the cap 2a of the pod 2 and closing the wafer loading / unloading port 30, and a drive mechanism 31b for driving the closure 31a. The pod opener 31 opens and closes the cap 2 a of the pod 2 placed on the IO stage 32, thereby enabling the wafer 1 to be taken in and out of the pod 2. The pod 2 is carried in (supplied) and carried out (discharged) with respect to the IO stage 32 by an in-process transfer device (RGV) (not shown).

(Processing furnace and cooling unit)
As shown in FIG. 1, a first processing furnace 33 for performing a desired process on the wafer 1 is provided on two side walls located on the rear side (back side) of the six side walls of the housing 11. And the second processing furnace 34 are connected to each other through gate valves 35 and 36, respectively. Each of the first processing furnace 33 and the second processing furnace 34 is configured as a hot wall type processing furnace. In the present embodiment, the first processing furnace 33 and the second processing furnace 34 are configured to perform sputtering film formation as described later.

  A first cooling unit 37 as a cooling chamber and a second cooling unit 38 are connected to the remaining two opposite side walls of the six side walls of the housing 11. . Both the first cooling unit 37 and the second cooling unit 38 are configured to cool the processed wafer 1.

  The substrate processing apparatus includes a first transfer chamber 12, a second transfer chamber 22, spare chambers 15 and 16, a first processing furnace 33, a second processing furnace 34, a first cooling unit 37, A controller 240 is provided as a control unit that controls all the operations of the second cooling unit 38.

(2) Operation of Substrate Processing Apparatus Next, a series of processes for processing the wafer 1 in the substrate processing apparatus will be described with reference to FIGS. In the following description, the operation of each part constituting the substrate processing apparatus is entirely controlled by the controller 240.

  A pod 2 containing, for example, 25 unprocessed wafers 1 is transferred to a substrate processing apparatus by an in-process transfer apparatus (not shown). As shown in FIGS. 1 and 2, the pod 2 is delivered from the in-process transfer device and placed on the IO stage 32. The cap 2a of the pod 2 is removed by the pod opener 31, and the wafer loading / unloading port of the pod 2 is opened.

  When the pod 2 is opened by the pod opener 31, the second substrate transfer machine 25 picks up the wafer 1 from the pod 2 and loads it into the preliminary chamber 15, and transfers the wafer 1 onto the wafer table 19. During the transfer operation, the gate valve 17 on the first transfer chamber 12 side of the preliminary chamber 15 is closed, and the negative pressure in the first transfer chamber 12 is maintained. When the transfer of a predetermined number of, for example, 25 wafers 1 stored in the pod 2 onto the wafer table 19 is completed, the gate valve 23 is closed and the inside of the preliminary chamber 15 is negatively pressured by an exhaust device (not shown). Exhaust.

  When the pressure in the preliminary chamber 15 reaches a preset pressure value, the gate valve 17 is opened to connect the preliminary chamber 15 and the first transfer chamber 12. Subsequently, the first substrate transfer device 13 in the first transfer chamber 12 picks up the wafer 1 from the wafer table 19 and loads it into the first transfer chamber 12. After closing the gate valve 17, the gate valve 35 is opened to allow the first transfer chamber 12 and the first processing furnace 33 to communicate with each other. Subsequently, the first substrate transfer machine 13 carries the wafer 1 from the first transfer chamber 12 into the first processing furnace 33 and transfers it onto the support in the first processing furnace 33. After the gate valve 35 is closed, a substrate processing step for forming a thin film such as a magnetic thin film is performed in the first processing furnace 33 as will be described later.

  When the substrate processing step is completed in the first processing furnace 33, the gate valve 35 is opened, and the first substrate transfer machine 13 has processed the wafer into the first transfer chamber 12 from the first processing furnace 33. Unload 1 After unloading the wafer 1 from the first processing furnace 33, the gate valve 35 is closed.

  The wafer 1 unloaded from the first processing furnace 33 by the first substrate transfer machine 13 is loaded into the first cooling unit 37, and the processed wafer 1 is cooled.

  While the processed wafer 1 is cooled, the wafer 1 prepared in advance on the wafer table 19 in the preliminary chamber 15 is carried into the first processing furnace 33 by the first substrate transfer device 13. To do. After the gate valve 35 of the first processing furnace 33 is closed, the substrate processing step is performed in the first processing furnace 33.

  When a preset cooling time has elapsed in the first cooling unit 37, the cooled wafer 1 is unloaded from the first cooling unit 37 into the first transfer chamber 12 by the first substrate transfer device 13. .

  After the cooled wafer 1 is carried out from the first cooling unit 37 into the first transfer chamber 12, the gate valve 18 is opened. Then, the wafer 1 unloaded from the first cooling unit 37 is transferred into the preliminary chamber 16 and transferred onto the wafer table 20, and then the preliminary chamber 16 is closed by the gate valve 18.

  By repeating the above operation, a predetermined number of, for example, 25 wafers 1 loaded into the preliminary chamber 15 are sequentially processed.

  The processing for all the wafers 1 loaded into the spare chamber 15 is finished, all the processed wafers 1 are stored in the spare chamber 16, and the spare chamber 16 is closed by the gate valve 18. Then, an inert gas is supplied into the preliminary chamber 16 to make it approximately atmospheric pressure. When the inside of the preliminary chamber 16 is brought to substantially atmospheric pressure, the gate valve 24 is opened, and the cap 2 a of the empty pod 2 placed on the IO stage 32 is opened by the pod opener 31. Subsequently, the second substrate transfer machine 25 in the second transfer chamber 22 picks up the wafer 1 from the wafer table 20 and carries it out into the second transfer chamber 22. Are stored in the pod 2 through the wafer loading / unloading port 30.

  When the storage of the 25 processed wafers 1 into the pod 2 is completed, the cap 2a of the pod 2 is closed by the pod opener 31. Then, the closed pod 2 is transferred from the IO stage 32 to the next process by the in-process transfer apparatus.

  The above operation has been described by taking the case where the first processing furnace 33 and the first cooling unit 37 are used as an example, but the same applies to the case where the second processing furnace 34 and the second cooling unit 38 are used. Perform the operation. In the above-described continuous processing apparatus, one spare chamber 15 is used for carrying in and the other spare chamber 16 is used for carrying out. However, one spare chamber 16 may be used for carrying in, and the other spare chamber 15 may be used for carrying out. . The first processing furnace 33 and the second processing furnace 34 may perform the same process, or may perform different processes. In the case where different processing is performed in the first processing furnace 33 and the second processing furnace 34, for example, after the predetermined substrate processing is performed on the wafer 1 in the first processing furnace 33, the second processing is continued. Another substrate processing may be performed in the furnace 34. In the case where another substrate processing is not performed in the second processing furnace 34 after a predetermined substrate processing is performed on the wafer 1 in the first processing furnace 33, the first cooling unit 37 or the second cooling is performed. You may make it go through the unit 38. Further, it may be possible not to pass through the first cooling unit 37 or the second cooling unit 38 as necessary, for example, by performing no heat treatment in the processing in the first processing furnace 33 and the second processing furnace 34.

(3) Configuration of Processing Furnace Next, the configuration of the first processing furnace 33 and the second processing furnace 34 configured to be capable of performing the sputtering film formation will be described mainly using FIGS. 3 and 4. Since the first processing furnace 33 and the second processing furnace 34 have substantially the same configuration, the following description will be given by taking the first processing furnace 33 as an example.

FIG. 3 is a longitudinal sectional view of the first processing furnace 33 according to the first embodiment of the present invention. FIG.
It is a cross-sectional view of the first processing furnace 33 according to the first embodiment of the present invention. In FIG. 4, for the sake of convenience, the target rotation drive unit 44 and the rotation shaft 44a are not shown.

  As shown in FIGS. 3 and 4, the first processing furnace 33 includes a processing chamber 40 mainly including a film forming chamber 42 and a sputtering chamber 41.

(Deposition room)
First, the configuration of the film forming chamber 42 will be described. The film forming chamber 42 is formed in the vacuum container 42a. The vacuum vessel 42a is configured in a cubic shape. The vacuum vessel 42a is connected adjacent to the back wall (right side in the figure) of the housing 11. On the side wall (hereinafter referred to as the front wall) adjacent to the housing 11 of the vacuum vessel 42 a, a loading / unloading port 43 for transferring the wafer 1 into the film forming chamber 42 is opened. The carry-in / out port 43 is configured to be opened and closed by a gate valve 35 (see FIGS. 1 and 2). The wafer 1 is transferred into and out of the film forming chamber 42 by the first substrate transfer machine 13 shown in FIG. 1 as described above. Then, the wafer 1 can be transferred between the first transfer chamber 12 and the film forming chamber 42 by opening the gate valve 35. Further, an opening 42 b communicating with the sputtering chamber 41 is formed in a side wall (hereinafter referred to as a back wall) adjacent to the sputtering chamber 41 of the vacuum vessel 42 a. The opening 42b can be opened and closed by a gate valve (not shown) so that sputtered particles 98 from the sputtering chamber 41 can enter. Note that the gas atmosphere in the film forming chamber 42 is configured to be evacuated through the sputtering chamber 41 as described later.

(Substrate holder)
In the film forming chamber 42, a substrate holding unit 50 that holds the wafer 1 made of Si as a substrate is provided. The substrate holding unit 50 is configured as a chuck mechanism such as a vacuum chuck or an electrostatic chuck, and the wafer 1 is held on the upper surface (holding surface) of the substrate holding unit 50. The substrate holding unit 50 is configured to be controlled in posture by a tilt mechanism 52. Then, the wafer 1 held on the substrate holding unit 50 is set in a horizontal posture (at the time of transferring the wafer 1, a posture in which the upper surface of the wafer 1 faces the ceiling of the vacuum vessel 42 a) or in a vertical posture (upper surface of the wafer 1. Is a posture facing the target holding unit 46 side). In FIG. 3, the dotted line indicates that the substrate holding unit 50 is in the horizontal posture (the wafer 1 is horizontal), and the solid line indicates that the substrate holding unit 50 is in the vertical posture (the wafer 1 is vertical). Show.

  At the time of film formation, the upper surface (processing surface on which a thin film is formed) of the wafer 1 placed on the substrate holding unit 50 is selected from a target group 48 held by a target holding unit 46 described later. It is configured to face one target (also called a predetermined target) 47. And it is comprised so that the sputtered particle 98 which generate | occur | produced in the predetermined target 47 mentioned later may inject into the upper surface of the wafer 1. FIG.

  The substrate holding unit 50 is configured to be rotatable in the circumferential direction with respect to the main surface of the wafer 1 by a rotation mechanism 51. The rotation mechanism 51 and the tilt mechanism 52 are configured by, for example, a servo motor. The rotation mechanism 51 and the tilt mechanism 52 are controlled by a controller 240.

(Sputtering chamber)
The sputtering chamber 41 is formed in the vacuum vessel 41a. The vacuum vessel 41a is configured in a rectangular parallelepiped shape. The vacuum vessel 41 a is connected adjacent to the back wall in the film formation chamber 42. An opening 41b communicating with the film forming chamber 42 is formed in a side wall (hereinafter referred to as a front wall) adjacent to the film forming chamber 42 of the vacuum vessel 41a. The opening 41b can be opened and closed by a gate valve (not shown), and is configured to be able to emit sputtered particles 98 generated in the sputtering chamber 41. The sputtering chamber 41 is configured to be able to exhaust the gas atmosphere in the film forming chamber 42 through the opening 41b as will be described later. In the sputtering chamber 41, an ion generation unit 80, a target holding unit 46, a scattering suppression unit 101, and an incident suppression unit 102, which will be described later, are provided.

(Gas exhaust part)
Exhaust ports 53a and 53b are formed in the lower portion of the back wall in the vacuum vessel 41a (on the left side in FIG. 4). A pipe 54a is connected to the exhaust port 53a. For example, a cryopump 55a is connected to the pipe 54a as an exhaust pump. A pipe 54b is connected to the exhaust port 53b. For example, a turbo molecular pump 55b is connected to the pipe 54b as an exhaust pump. The inside of the sputtering chamber 41 is configured so that the gas atmosphere is exhausted together with the inside of the film forming chamber 42. That is, by closing the loading / unloading port 43 of the film forming chamber 42 and opening the openings 41b and 42b, the inside of the film forming chamber 42 and the inside of the sputtering chamber 41 can be evacuated. The gas exhaust part according to this embodiment is mainly configured by the exhaust ports 53a and 53b, the pipes 54a and 54b, the cryopump 55a, and the turbo molecular pump 55b. The cryopump 55a and the turbo molecular pump 55b are controlled by the controller 240.

(Ion generator)
An ion generator 80 is installed in the lower part of the outer periphery of the vacuum vessel 41a. As will be described later, the ion generator 80 is configured to generate, for example, Ar gas ions 97 and supply the generated ions 97 into the sputtering chamber 41.

  As shown in FIG. 3, the ion generator 80 includes a housing 81. An ion source chamber 82 is formed in the housing 81. The casing 81 is formed in a cylindrical shape with one end (the side opposite to the connection side with the vacuum vessel 41a) closed. An ion irradiation port 83 is opened in the lower portion of the side wall of the vacuum vessel 41a (connection portion with the housing 81). The opening of the casing 81 of the ion generator 80 is aligned with the ion irradiation port 83. A gas introduction pipe 84 for introducing (supplying), for example, Ar gas as an ion source into the ion source chamber 82 is connected to the closed wall of the casing 81. A magnet 85 is installed on the outer periphery of the casing 81 of the ion generator 80. The magnet 85 is configured to generate a cusp magnetic field for confining plasma in the housing 81.

  A filament 86 is installed on the closed wall in the casing 81 (the end opposite to the ion irradiation port 83). A filament power source (DC power source) 87 that supplies power to the filament 86 is connected to the filament 86. The cathode of the filament power supply 87 is connected to the cathode of an arc power supply (DC power supply) 88 that forms plasma in the ion source chamber 82. A ground electrode 90, a deceleration electrode 92, and an acceleration electrode 95 are installed in this order from the ion irradiation port 83 side at the end of the housing 81 on the ion irradiation port 83 side. The ground electrode 90 is connected to the ground. The deceleration electrode 92 is connected to the cathode of a deceleration power source (DC power source) 91. The anode of the deceleration power supply 91 is connected to the ground. The acceleration electrode 95 is connected to the anode of an acceleration power source (DC power source) 94 through a resistor 93. The casing 81 and the anode of the arc power supply 88 are also connected to the anode of the acceleration power supply 94. The cathode of the acceleration power supply 94 is connected to the ground.

  The ground electrode 90, the deceleration electrode 92, and the acceleration electrode 95 are formed in a circular flat plate shape. Each of the ground electrode 90, the deceleration electrode 92, and the acceleration electrode 95 (hereinafter also referred to as each electrode) is formed as a circular small hole, and a large number of transmission ports 96 through which ions 97 are transmitted. The filament power supply 87, the arc power supply 88, the deceleration power supply 91, and the acceleration power supply 94 are controlled by the controller 240.

(Target holding part)
A target holding portion 46 is provided on the upper portion of the back wall of the vacuum vessel 41a (above the exhaust ports 53a and 53b). The target holding unit 46 is configured to hold a target group 48 in which a plurality of targets 47 are arranged. The target holding unit 46 includes a target base 45 that holds a target group 48 including, for example, eight targets 47 (47A to 47H), and a target rotation drive unit 44 that rotates the target base 45.

  As shown in FIG. 5, the target base 45 is configured in a truncated cone shape, for example. The target pedestal 45 is configured so that a plurality of targets 47 (47A to 47H) are arranged radially with respect to the rotation shaft 44a of the target rotation drive unit 44. Specifically, the target base 45 includes a plurality of target holders 49 that extend in the vertical direction with respect to the rotation shaft 44 a of the target rotation drive unit 44. Each target holder 49 is configured to hold each target 47. Each target 47 is configured to be held obliquely with respect to the upper surface of the target pedestal 45 by the target holder 49. The target holder 49 is configured to hold the adjacent targets 47 apart from each other. In the present embodiment, since the target 47 is not directly disposed on the target pedestal 45, it becomes difficult for heat generated by sputtering to be transmitted to other parts such as the target pedestal 45, and temperature rise and deterioration of other parts are suppressed. be able to. Further, the target holder 49 makes it easy to adjust the angle and position of the target 47 individually. Furthermore, since the target base 45 only needs to have a size and shape to which the target holder 49 can be attached, the target base 45 can be reduced in weight, and the output of the target rotation driving unit 44a can be reduced. .

  As shown in FIGS. 3 and 4, the rotation shaft 44 a of the target rotation drive unit 44 is rotatably supported in the sputtering chamber 41. The target rotation drive unit 44 rotates the target pedestal 45 so that a predetermined target 47 in the target group 48 is opposed to the ion irradiation port 83 of the ion generation unit 80 and is held by the substrate holding unit 50. It is configured to face the wafer 1. As a result, the ions 97 generated by the ion generator 80 can be irradiated to the predetermined target 47 in the target group 48 and generated by the predetermined target 47 only by rotating the target base 45. It is possible to irradiate the upper surface of the wafer 1 with the sputtered particles 98. As shown in FIG. 6, the target rotation drive unit 44 includes a motor 61, a pulley 62 rotated by the motor 61, a transmission belt 63 hung on the pulley 62, and the motor 61 from the transmission belt 63. And a pulley 64 that transmits the rotation to the rotation shaft 44a. When the motor 61 is driven, the rotation (rotation) of the motor 61 is transmitted to the rotation shaft 44a via the pulley 62, the transmission belt 63, and the pulley 64, and the rotation shaft 44a rotates. The motor 61 is controlled by the controller 240.

The material of each target 47 in the target group 48 can be a different metal, an insulating material such as magnesium oxide (MgO), or the like, and is appropriately changed according to the type of thin film formed on the wafer 1. For example, when a magnetic thin film made of CoFeB (cobalt, iron, boron) is formed on the wafer 1, a CoFeB alloy can be used as the material of the target 47. When a magnetic thin film made of PtFeP (platinum, iron, phosphorus) is formed on the wafer 1, a PtFeP alloy can be used as the material of the target 47. Depending on the type of thin film, the target 47 may be made of a quaternary or quaternary alloy obtained by further mixing Cu, Ni, or the like with the above ternary alloy. Further, as a material of the target 47, a simple substance such as Fe, Cu, or Ni may be used. Further, the target 47 is made of, for example, an alloy chip such as an FeP alloy chip, an FeCu alloy chip, an FeNi alloy chip, an FeCuP alloy chip, or an FeNiP alloy chip on a member made of Co or Pt with a predetermined composition. You may comprise as a composite target mounted so that it may become a ratio. The material of the target 47 is a single Ta (tantalum), Ti (titanium), R
Of course, u (ruthenium) or the like may be used, or binary NiFe (nickel, iron), CoFe (cobalt, iron), or MnIr (manganese, iridium) may be used.

(Scattering suppression part and incident suppression part)
In the upper part of the front wall of the vacuum vessel 41 a (above the opening 41 b), the scattering suppression unit 101 that suppresses the sputtered particles 98 generated at the predetermined target 47 from scattering to the other target 47 and the predetermined target 47. An incident suppression unit 102 that suppresses the incident sputtered particles 98 from entering another target 47 is provided.

(Spattering suppression part)
First, the scattering suppression unit 101 will be described. The scattering suppression unit 101 is held by the target holding unit 46. As shown in FIGS. 6 and 7, the scattering suppression unit 101 has a first opening 103 formed at a portion facing each target 47, and a plurality of partition walls 104 that partition between adjacent targets 47. Have.

  For example, eight first openings 103 are formed so as to be radially arranged so that each target 47 is exposed. The first opening 103 is configured in such a size and shape that ions 97 can enter the predetermined target 47 and sputtered particles 98 generated on the predetermined target 47 can be emitted to the wafer 1. The first opening 103 may be configured by appropriately adjusting the size and shape of each target 47.

  The partition wall 104 includes a side wall 104 a that partitions between adjacent targets 47 on the target holding portion 46 side. The side walls 104a are formed, for example, in a plate shape, and are arranged in a radial manner so as to surround the adjacent first openings 103, respectively. Thereby, the side wall 104a is configured to be able to suppress the sputtered particles 98 generated at the predetermined target 47 from being scattered to other adjacent targets 47. Further, the side wall 104a prevents the ions 97 from the ion generator 80 from being simultaneously irradiated to other adjacent targets 47, and prevents a plurality of types of sputtered particles 98 from being simultaneously generated by the plurality of targets 47. It is configured to be possible. Further, the partition wall 104 includes an inner wall 104 b that partitions the rotation shaft 44 a and the target 47 on the target holding portion 46 side. The inner side wall 104b is formed in a plate shape, for example, and is formed in a substantially circular shape so as to surround the outer periphery of the rotation shaft 44a. Thereby, the inner wall 104b is configured to be able to suppress the sputtered particles 98 generated at the predetermined target 47 from being scattered in the direction of the rotating shaft 44a.

  The inner side wall 104 b also serves as a connecting part that holds the scattering suppressing part 101 on the target holding part 46, and is configured to fix the scattering suppressing part 101 to the target holding part 46. That is, the scattering suppression unit 101 is configured to cover the target holding unit 46 and rotate integrally with the target holding unit 46. Thereby, the first opening 103 is configured to maintain the same position as the position of each target 47, and to prevent the positions of the first opening 103 and each target 47 from being shifted. As a result, the ions 97 can enter the predetermined target 47 and the sputtered particles 98 generated by the predetermined target 47 can enter the wafer 1. The inner wall 104b and the connecting portion may be configured separately.

(Injection suppression part)
Next, the incident suppression unit 102 will be described. The incident suppression unit 102 is provided between the scattering suppression unit 101 and the wafer 1. The incident suppression unit 102 is supported and fixed to the front wall of the sputtering chamber 41 by a support unit 106 (see FIG. 3). As shown in FIGS. 6 and 8, the incident suppressing portion 102 is formed with one second opening 105 so as to expose a predetermined target 47, and the first opening facing the other target 47. It is configured to cover the portion 103. Similar to the first opening 103, the second opening 105 has such a size and shape that ions 97 can enter the predetermined target 47 and sputtered particles 98 generated at the predetermined target 47 can be emitted to the wafer 1. It is configured. As a result, the incident suppression unit 102 closes the first opening 103 with respect to the other target 47, and is generated at the predetermined target 47 and reflected by the inner walls of the sputtering chamber 41 and the film formation chamber 42. The recoiled sputtered particle 98 is configured to be able to be suppressed from entering the other target 47.

Incidentally, scattering reduction unit 101 and the incoming preventing section 102 may be composed of a non-metallic material such as quartz (SiO ₂₎ or silicon carbide (SiC). In such a case, metal contamination in the wafer 1 and the processing chamber 40 can be suppressed. Further, the scattering suppressing unit 101 and the incident suppressing unit 102 may be made of a material that is difficult to be sputtered, such as W (tungsten).

  Moreover, the surface of the scattering suppression part 101 and the incident suppression part 102 is processed by sandblasting as surface roughness processing, for example. If the surface finish of the outer surfaces of the scattering suppression unit 101 and the incident suppression unit 102 is fine, the sputtered particles 98 are difficult to adhere, and even if they adhere, peeling or the like occurs, causing particles and the like. In the present embodiment, since the surface roughness treatment is performed, the sputtered particles 98 are likely to adhere to the surfaces of the scattering suppressing unit 101 and the incident suppressing unit 102, and the occurrence of peeling or the like is suppressed even if the sputtered particles 98 are adhered. It is comprised so that generation | occurrence | production of can be suppressed.

  The scattering suppression unit 101 and the incident suppression unit 102 are configured to be replaceable when the sputtered particles 98 reach a predetermined adhesion amount. This maintenance cycle is the same as the time when the target 47 (thin film type) is replaced with, for example, a deposition plate (not shown) mounted on the inner wall of the processing chamber 40, and is about 2 when used for 12 hours / day. About once a month.

  In the substrate processing apparatus configured as described above, the spatter particles 98 generated on the predetermined target 47 by the scattering suppressing unit 101 are prevented from scattering to other targets 47 and the predetermined target 47 is detected by the incident suppressing unit 102. By suppressing the sputtered particles 98 generated in step 1 from entering the other target 47, it is possible to suppress the adhesion of impurities to the target 47.

(4) Substrate Processing Step Next, a substrate processing step performed as one step of manufacturing a semiconductor device such as a magnetoresistive element memory will be described according to the flowchart of FIG. 9 mainly with reference to FIG. 3 and FIG. To do. In this step, a CoFeB thin film, a MgO thin film, and a Ru thin film are deposited on the wafer 1 in this order. FIG. 9 is a flowchart showing a substrate processing process according to the first embodiment of the present invention. The substrate processing step is performed by the substrate processing apparatus according to the above configuration.

(Process for loading wafer (step S1))
First, the wafer 1 is loaded from the loading / unloading port 43 into the film forming chamber 42 previously depressurized to a predetermined pressure, and placed on the substrate holding unit 50 in a horizontal posture.

(Process for holding wafer (step S2))
The substrate holding unit 50 chucks and holds the wafer 1 for positioning. Then, as shown in FIGS. 3 and 4, the substrate holding unit 50 is brought into a vertical posture (a posture in which the upper surface of the wafer 1 faces the target holding unit 46 side) by the tilt mechanism 52. Subsequently, the substrate holding unit 50 is rotated by the rotation mechanism 51 to rotate the wafer 1. The rotation of the wafer 1 is continued until a wafer unloading process described later.

  Subsequently, after the loading / unloading port 43 is closed by the gate valve 35 (see FIG. 1 and FIG. 2), the inside of the sputtering chamber 41 and the film forming chamber 42 are evacuated by the cryopump 55a and the turbo molecular pump 55b, For example, the pressure is reduced to 0.1 to 0.01 Pa.

(Step of forming a CoFeB thin film)
Subsequently, a CoFeB thin film is formed on the wafer 1 by performing the following steps S3 to S5.

(Step of rotating the target group (step S3))
First, the target rotation drive unit 44 rotates the target base 45 by a predetermined angle to rotate the target group 48, and a predetermined target 47, for example, a target 47 made of a CoFeB alloy (also called a CoFeB target) is ionized. It is made to oppose the ion irradiation port 83 of the generation part 80, and is made to oppose the upper surface of the wafer 1 hold | maintained at the board | substrate holding | maintenance part 50. At this time, the scattering suppressing unit 101 covers the target holding unit 46 and rotates integrally with the target holding unit 46, whereby the first opening 103 maintains the same position as the position of each target 47, and the first The position of the opening 103 and each target 47 is prevented from shifting. As a result, the sputtered particles 98 generated by the predetermined target 47 can be incident on the wafer 1.

(Step of generating ions (step S4))
Subsequently, the Ar gas is converted into plasma by the ion generator 80 to generate Ar ions 97. Specifically, Ar gas is supplied from the gas introduction tube 84 into the ion source chamber 82 of the ion generator 80 at a predetermined flow rate, for example, 2 to 20 sccm. Then, the filament power supply 87 is turned on, and thermoelectrons are emitted from the filament 86. Then, the arc power supply 88 is turned on, electrons are moved in the ion source chamber 82 to collide with Ar atoms, and the Ar gas supplied into the ion source chamber 82 is turned into plasma. Then, the deceleration power supply 91 and the acceleration power supply 94 are turned on, the acceleration electrode 95 is set to a positive potential, and the deceleration electrode 92 is set to a negative potential. As a result, an Ar ion 97 is drawn out from the transmission port 96 group into the film forming chamber 42 by an electric field generated by a potential difference between the acceleration electrode 95, the deceleration electrode 92, and the ground electrode 90 to generate ions 97 (ion beams). The potential difference between the deceleration electrode 92 and the ground electrode 90 serves to prevent electrons in the sputtering chamber 41 from entering the ion source chamber 82.

(Film formation process (step S5))
Ions 97 drawn from the ion generator 80 into the film forming chamber 42 through the transmission port 96 group are irradiated to a predetermined target 47 (here, a target made of a CoFeB alloy). Then, sputtered particles 98 such as molecules constituting the CoFeB alloy jump out of the predetermined target 47 (CoFeB target). Then, the sputtered particles 98 that have jumped out enter the upper surface of the wafer 1 and are adsorbed (deposited), and a CoFeB thin film, for example, a magnetic thin film is formed on the upper surface of the wafer 1.

  At this time, the first opening 103 is formed in a portion that is held by the target holding unit 46 and faces each target 47, and the scattering suppressing unit 101 having a plurality of partition walls 104 that partition between the adjacent targets 47, The spatter particles 98 generated at a predetermined target 47 (CoFeB target) are prevented from scattering to other targets 47. Specifically, the partition 104a of the scattering suppressing unit 101 suppresses the sputtered particles 98 generated on the predetermined target 47 (CoFeB target) from scattering to other adjacent targets 47. Further, the inner wall 104b prevents the sputtered particles 98 generated at the predetermined target 47 from being scattered toward the rotation shaft 44a.

Further, a second opening 105 is provided between the scattering suppression unit 101 and the wafer 1 so as to expose a predetermined target 47 (CoFeB target), and a first opening facing the other target 47. The incident suppression unit 102 configured to cover the unit 103 suppresses the sputtered particles 98 generated on the predetermined target 47 (CoFeB target) from entering the other target 47. Specifically, the incident suppression unit 102 blocks the first opening 103 with respect to the other target 47 so that it is reflected on the inner wall of the sputtering chamber 41 or the film forming chamber 42 other than the upper surface of the wafer 1. The recoiled sputtered particles 98 are prevented from entering the other target 47.

  When the ions 97 are incident on the predetermined target 47 (CoFeB target), the scattering suppression unit 101 prevents the ions 97 from being irradiated to other adjacent targets 47 at the same time. The generation of a plurality of types of sputtered particles 98 is prevented.

  When a predetermined time (for example, 30 to 180 seconds) elapses and a CoFeB thin film having a desired film thickness is formed on the upper surface of the wafer 1, the supply of ions 97 by the ion generator 80 is stopped, and the film forming process is ended.

(Process for forming MgO thin film)
Subsequently, the above-described steps S3 to S5 are performed again to form another thin film, for example, an MgO thin film, which is an insulating thin film, so as to be stacked on the CoFeB thin film (in the case of “No” in step S6).

  Specifically, the target pedestal 45 is rotated again by a predetermined angle by the target rotation driving unit 44 so that the target 47 made of MgO (also referred to as MgO target) is opposed to the ion irradiation port 83 and the wafer 1 It is made to oppose to an upper surface (step S3). At this time, the scattering suppression unit 101 rotates integrally with the target holding unit 46, and the sputtered particles 98 generated from the MgO target can enter the wafer 1. Next, Ar ions 97 are generated in the ion generator 80 (step S4), and the ArO 97 is irradiated with the Ar ions 97. Then, the sputtered particles 98 that have jumped out of the MgO target enter the upper surface of the wafer 1, and an MgO thin film is formed on the CoFeB thin film on the wafer 1 (step S5). At this time, the spatter suppressing unit 101 suppresses the sputtered particles 98 generated in the MgO target from scattering to the other target 47, and the incident suppressing unit 102 causes the sputtered particles 98 generated in the MgO target to The incident on the target 47 is suppressed.

(Step of forming a Ru thin film)
Subsequently, by performing the above steps S3 to S5 again, another thin film, for example, a Ru thin film that is a nonmagnetic thin film is deposited on the MgO thin film (in the case of “No” in step S6). .

  Specifically, the target pedestal 45 is rotated by a predetermined angle by the target rotation driving unit 44 so that the Ru target is opposed to the ion irradiation port 83 and is also opposed to the upper surface of the wafer 1. The scattering suppression unit 101 rotates integrally with the target holding unit 46 so that the sputtered particles 98 generated by the Ru target can enter the wafer 1. Next, Ar ions 97 are generated in the ion generator 80 (step S4), and the Ru target is irradiated with the Ar ions 97. Then, the sputtered particles 98 jumping out from the Ru target are incident on the upper surface of the wafer 1, and a Ru thin film is formed on the MgO thin film of the wafer 1 (step S5). At this time, the spatter suppressing unit 101 suppresses the sputtered particles 98 generated at the Ru target from scattering to the other target 47, and the incident suppressing unit 102 causes the sputtered particles 98 generated at the Ru target to The incident on the target 47 is suppressed.

(Wafer Unloading Step (Step S7))
Then, when there is no thin film to be formed next and the process is finished (in the case of “Yes” in step S6), while Ar gas is supplied as a purge gas into the sputtering chamber 41 and the film forming chamber 42, The gas atmosphere in the film formation chamber 42 is exhausted. When the predetermined time has elapsed, the rotation mechanism 51 is stopped and the rotation of the wafer 1 is stopped. Then, the wafer 1 is unloaded and the substrate processing step is completed. Thereafter, the loading / unloading port 43 is opened by the gate valve 35 (see FIGS. 1 and 2), and the processed wafer 1 held in the substrate holding unit 50 is unloaded from the loading / unloading port 43. Then, after a predetermined time has elapsed from the end of the substrate processing step, the turbo molecular pump 55b is switched to the cryopump 55a, and the inside of the processing chamber 40 is maintained at a high vacuum.

(5) Effects according to the present embodiment According to the present embodiment, the following one or more effects are achieved.

  (A) According to the present embodiment, the first opening 103 is formed in a portion that is held by the target holding portion 46 and faces each target 47, and a plurality of partition walls 104 that partition the adjacent targets 47 are provided. The scattering suppression part 101 which has is provided. Thereby, it is possible to suppress the sputtered particles 98 generated at the predetermined target 47 from being scattered to other targets 47 made of a material different from the predetermined target 47.

  (B) According to the present embodiment, the scattering suppression unit 101 is held by the target holding unit 46 by the inner side wall 104 b that also serves as the coupling unit, and covers the target holding unit 46 and is rotated integrally with the target holding unit 46. It is configured as follows. Thereby, the 1st opening part 103 maintains the same position as the position of each target 47, and it can prevent that the position of the 1st opening part 103 and each target 47 shift | deviates. As a result, the ions 97 can enter the predetermined target 47 and the sputtered particles 98 generated by the predetermined target 47 can enter the wafer 1.

  (C) According to the present embodiment, the partition wall 104 includes the side wall 104 a that partitions the adjacent targets 47. Thereby, the side wall 104 a can suppress the sputtered particles 98 generated at the predetermined target 47 from being scattered to other adjacent targets 47.

  (D) According to the present embodiment, the partition wall 104 includes the inner wall 104 b that partitions the rotation shaft 44 a and the target 47. Thereby, the inner wall 104b can suppress the sputtered particles 98 generated at the predetermined target 47 from being scattered in the direction of the rotating shaft 44a.

  The partition wall 104 may include an outer wall that surrounds the target group 48, although not shown. In this case, it is possible to prevent the sputtered particles 98 generated on the predetermined target 47 from scattering from the outer peripheral side of the target group 48.

(E) According to the present embodiment, the second opening 105 is provided between the scattering suppression unit 101 and the wafer 1 so as to expose the predetermined target 47 and is opposed to the other target 47. The incident suppression part 102 comprised so that the 1st opening part 103 to cover may be covered. As a result, the incident suppression unit 102 blocks the first opening 103 with respect to the other target 47, and is generated in the predetermined target 47. It is possible to prevent the sputtered particles 98 reflected and reflected from the inner wall of 42 from entering the other target 47.

(F) According to the present embodiment, the sputtered particles 98 generated at the predetermined target 47 are prevented from scattering to the other target 47, and the sputtered particles 98 generated at the predetermined target 47 are prevented from being scattered by the other target. 47 can be prevented from entering. As a result, the cleanliness of the target 47 can be maintained, impurities can be prevented from being mixed into the thin film formed on the wafer 1 (cross-contamination), and the thin film formed on the wafer 1 can be suppressed. It becomes possible to improve the film quality.

(G) According to the present embodiment, the outer surfaces of the scattering suppression unit 101 and the incidence suppression unit 102 are subjected to surface roughness treatment. If the surface finish of the outer surfaces of the scattering suppression unit 101 and the incident suppression unit 102 is fine, the sputtered particles 98 are difficult to adhere, and even if they adhere, peeling or the like occurs, causing particles and the like. In the present embodiment, since the surface roughness treatment is performed, the sputtered particles 98 are likely to adhere to the surfaces of the scattering suppressing unit 101 and the incident suppressing unit 102, and the occurrence of peeling or the like is suppressed even if the sputtered particles 98 are adhered. Can be suppressed.

(H) According to the present embodiment, the target holding unit 46 including the target pedestal 45 that holds the target group 48 and the target rotation driving unit 44 that rotates the target pedestal 45 is provided. As a result, by simply rotating the target base 45, the target group 48 can be rotated and the predetermined target 47 can be easily opposed to the ion irradiation port 83 and can be opposed to the upper surface of the wafer 1.

(I) According to the present embodiment, a plurality of target holders 49 extending in the vertical direction with respect to the rotation shaft 44 a of the target rotation drive unit 44 are provided, and each target 47 is held. Thereby, since the target 47 is not directly disposed on the target pedestal 45, it becomes difficult to transfer heat generated by sputtering to other parts such as the target pedestal 45, and the temperature rise and deterioration of other parts can be suppressed. it can. Further, the target holder 49 makes it easy to adjust the angle and position of the target 47 individually. Furthermore, since the target base 45 only needs to have a size and shape to which the target holder 49 can be attached, the target base 45 can be reduced in weight, and the output of the target rotation driving unit 44a can be reduced. .

(J) According to the present embodiment, the substrate generation unit 80 is provided in communication with the sputtering chamber 41 in which the ion generation unit 80, the target holding unit 46, the scattering suppression unit 101, and the incident suppression unit 102 are provided. A film forming chamber 42 to be provided. That is, the sputtering chamber 41 for generating the sputtered particles 98 and the film forming chamber 42 for forming a film on the wafer 1 are configured separately. Thereby, it is easy to adjust and clean each independently.

In forming a multilayer film on the wafer 1, it is necessary to maintain a high vacuum environment in order to maintain cleanliness by reducing impurities in the thin film and reducing the moisture concentration in the processing chamber 42. In the present embodiment, a cryopump 55a is used. Although not shown, the cryopump 55a is a storage type pump that condenses or adsorbs gas molecules in the container on a cryogenic surface installed on the inner wall of the container in the pump. Here, if the cryopump 55a is operated at the time of film formation, a gas such as Ar gas or xenon gas in the sputtering chamber 41 adheres to the pump container. The cryopump 55a needs to be regularly maintained (also called regeneration) with a certain amount of gas adhesion. This maintenance method is carried out by once raising the temperature of the cryogenic surface of the inner container of the cryopump 55a from 10K to room temperature, returning the condensed or adsorbed gas to a gas and exhausting the container. The temperature raising time is about 2 hours. In the present embodiment, the turbo molecular pump 55 b and the cryopump 55 a are used in the same processing chamber 42. A turbo molecular pump 55b is used during film formation, and a cryopump 55a is used during other film formation. Accordingly, a high vacuum atmosphere is always maintained in the film forming chamber 42 and the sputtering chamber 41, and the cleanliness is maintained. And adhesion of the gas component in the cryopump 55a at the time of film-forming is suppressed, and gas adsorption in the cryopump 55a is suppressed. Therefore, even if the maintenance cycle is operated at, for example, 12 hours / day, about once every two months is sufficient. As a maintenance timing, it is good to carry out simultaneously with the maintenance of the electrode of the ion generation part 80 mentioned later. When only the cryopump 55a is used, maintenance is required about once every two weeks. For this reason, it is effective to use the turbo molecular pump 55b together with the cryopump 55a.

<Second Embodiment>
FIG. 10 is a plan view of a target holding portion 46B according to the second embodiment of the present invention. FIG. 11 is a longitudinal sectional view of the first processing furnace 33 according to the second embodiment of the present invention. This embodiment is different from the first embodiment in that the target 47 is directly arranged on the target holding unit 46. Other configurations are the same as those in the first embodiment.

  That is, as shown in FIGS. 10 and 11, the target holding portion 46B includes a target pedestal 45B. The target pedestal 45B is configured in a conical shape, and is configured such that a plurality of targets 47 are arranged directly on the conical surface of the target pedestal 45B. Specifically, the target base 45B is configured in an octagonal pyramid shape, for example. Each side surface (eight side surfaces) of the target base 45 </ b> B is configured to directly hold any one of the predetermined targets 47 (47 </ b> A to 47 </ b> H) in the target group 48. The conical surface of the target pedestal 45B is configured to hold adjacent targets 47 apart from each other. In addition, the target holding | maintenance part 46B may be comprised not only in the case where it is formed in an octagonal frustum shape but in other polygonal frustum shapes.

  According to the present embodiment, in addition to obtaining the same effect as the first embodiment, each target 47 can be arranged directly on the conical surface of the target pedestal 45B, so that the structure of the target pedestal 45B can be simplified and the cost can be reduced. Can be suppressed.

<Other Embodiments of the Present Invention>
In the present embodiment, the partition 104 is provided only on the target holding portion 46 side, but the present embodiment is not limited to this. Although not shown, the partition 104 may be further provided on the incident suppression unit 102 side, and the partition 104 may be configured by both the partition 104 on the target holding unit 46 side and the incidence suppression unit 102 side. In that case, the scattering suppression unit 101 is provided on the lower layer side of the target 47 so that the target 47 protrudes from the first opening 103. As a result, the sputtered particles 98 generated at the predetermined target 47 are suppressed from being incident on another target 47 by being suppressed by the partition wall 104 on the incident suppression unit 102 side between the scattering suppression unit 101 and the incident suppression unit 102. It becomes possible. Note that the partition 104 may be provided only on the incident suppression unit 102 side.

  In the present embodiment, the partition 104 is provided in the scattering suppression unit 101, but the present embodiment is not limited to this. You may comprise so that the partition 104 may be provided in the target holding | maintenance part 46 integrally.

  Moreover, in this embodiment, although it has comprised so that both the incident suppression part 102 and the scattering suppression part 101 may be provided, this embodiment is not limited to this. Only one of the incidence suppression unit 102 and the scattering suppression unit 101 may be provided.

In the above-described embodiment, a step of forming a CoFeB thin film that is a magnetic thin film is performed, and then a step of forming a MgO thin film that is an insulating thin film is performed, and then a step of forming a Ru thin film is performed. However, the present invention is not limited to this. That is, the thin film to be formed is not limited to a CoFeB thin film, a MgO thin film, a Ru thin film, or the like, but may be a PtFeP thin film, for example. Furthermore, the present invention is not limited to a ternary thin film such as a CoFeB thin film or a PtFeP thin film, but can also be applied to a case where a quaternary or quaternary thin film mixed with Cu, Ni, or the like is formed. In addition, the present invention can be suitably applied to the case where a laminated film of two layers or less is formed on the wafer 1 or the case where a laminated film of four layers or more is formed.

  In addition to the Si wafer, the substrate on which the thin film is formed may be a quartz glass substrate, a crystallized glass substrate, an MgO substrate, or the like. Further, the present invention is not limited to a substrate processing apparatus that processes a wafer substrate such as a semiconductor manufacturing apparatus according to the present embodiment, but is also a substrate processing apparatus that processes a substrate such as a printed wiring board, a liquid crystal panel, a magnetic disk, or a compact disk. Can also be suitably applied.

  As mentioned above, although embodiment of this invention was described concretely, this invention is not limited to the above-mentioned embodiment, It can change variously in the range which does not deviate from the summary.

<Preferred embodiment of the present invention>
Hereinafter, preferred embodiments of the present invention will be additionally described.

An ion generator that generates ions;
A target holding unit that holds a target group in which a plurality of targets are arranged, and rotates the target group so that the ions are incident on a predetermined target of the target group;
A substrate holder for holding the substrate so that sputtered particles generated at the predetermined target are incident thereon;
A first opening is formed in a portion that is held by the target holding portion and faces each of the targets, and includes a plurality of partition walls that partition the adjacent targets, and the sputter generated at the predetermined target. A scattering suppression unit for suppressing particles from scattering to other targets;
A second opening is provided between the scattering suppression portion and the substrate, and the second opening is formed to expose the predetermined target, and the first opening facing the other target is covered. An incident suppression unit that suppresses the sputtered particles generated at the predetermined target from entering the other target;
A substrate processing apparatus is provided.

  Preferably, the scattering suppression unit is held by the target holding unit so as to cover the target holding unit.

  More preferably, the said partition is provided with the side wall which partitions off between the said adjacent targets.

  More preferably, the partition includes an inner wall that partitions a rotation shaft that rotates the target group and the target.

  More preferably, the partition includes an outer wall surrounding the target group.

(Outer surface of scattering suppression part and incidence suppression part)
More preferably, the outer surface of the scattering suppression part and the incident suppression part is subjected to surface roughness treatment.

More preferably, the target holding unit is
A target base for holding the target group;
A target rotation drive unit for rotating the target pedestal;
Is provided.

  More preferably, the target pedestal is configured to arrange a plurality of targets radially with respect to a rotation axis of the target rotation drive unit.

  More preferably, the target pedestal includes a plurality of target holders extending in a direction perpendicular to the rotation axis of the target rotation driving unit, and the targets are respectively held by the target holders. Yes.

  More preferably, the target pedestal is configured in a conical shape, and is configured such that a plurality of the targets are arranged on the conical surface of the target pedestal.

  More preferably, the target holder is configured to hold adjacent targets apart from each other.

  More preferably, the target pedestal is configured to hold the targets adjacent to the conical surface apart from each other.

  More preferably, a sputtering chamber in which the ion generation unit, the target holding unit, the scattering suppression unit, and the incident suppression unit are provided, a film formation chamber in communication with the sputtering chamber and in which the substrate holding unit is provided, Is provided.

According to another aspect of the invention,
A step of generating ions by an ion generator;
A step of holding a target group in which a plurality of targets are arranged by a target holding unit, and rotating the target group so that the ions are incident on a predetermined target of the target group;
A step of holding the substrate so that sputtered particles generated at the predetermined target are incident by the substrate holding unit;
Forming the thin film on the substrate by causing the sputtered particles to enter the substrate, and forming the thin film,
A first opening is formed in a portion that is held by the target holding portion and faces each of the targets, and the scattering target has a plurality of partition walls that partition the adjacent targets. While suppressing the generated sputtered particles from scattering to other targets,
A second opening is provided between the scattering suppression portion and the substrate, and the second opening is formed to expose the predetermined target, and the first opening facing the other target is covered. A semiconductor device manufacturing method for suppressing sputtered particles generated at the predetermined target from entering the other target is provided by the incident suppression unit.

1 Wafer (substrate)
46 Target holding unit 47 (47A to 47H) Target 48 Target group 50 Substrate holding unit
80 Ion generator 97 Ion (ion beam)
98 Sputtered particles 101 Splashing suppression unit 102 Incident suppression unit 103 First opening 104 Partition 105 Second opening

Claims (2)

An ion generator that generates ions;
A target holding unit that holds a target group in which a plurality of targets are arranged, and rotates the target group so that the ions are incident on a predetermined target of the target group;
A substrate holder for holding the substrate so that sputtered particles generated at the predetermined target are incident thereon;
A first opening is formed in a portion that is held by the target holding portion and faces each of the targets, and includes a plurality of partition walls that partition the adjacent targets, and the sputter generated at the predetermined target. A scattering suppression unit for suppressing particles from scattering to other targets;
A second opening is provided between the scattering suppression portion and the substrate, and the second opening is formed to expose the predetermined target, and the first opening facing the other target is covered. And an incident suppression unit that suppresses the sputtered particles generated on the predetermined target from entering the other target. A step of generating ions by an ion generator;
A step of holding a target group in which a plurality of targets are arranged by a target holding unit, and rotating the target group so that the ions are incident on a predetermined target of the target group;
A step of holding the substrate so that sputtered particles generated at the predetermined target are incident by the substrate holding unit;
Forming the thin film on the substrate by causing the sputtered particles to enter the substrate, and forming the thin film,
A first opening is formed in a portion that is held by the target holding portion and faces each of the targets, and the scattering target has a plurality of partition walls that partition the adjacent targets. While suppressing the generated sputtered particles from scattering to other targets,
A second opening is provided between the scattering suppression portion and the substrate, and the second opening is formed to expose the predetermined target, and the first opening facing the other target is covered. A method of manufacturing a semiconductor device, wherein the incident suppression unit suppresses the sputtered particles generated on the predetermined target from entering the other target.

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