JPH0637074A - Cleaning method for semiconductor manufacturing apparatus - Google Patents
Cleaning method for semiconductor manufacturing apparatusInfo
- Publication number
- JPH0637074A JPH0637074A JP18976892A JP18976892A JPH0637074A JP H0637074 A JPH0637074 A JP H0637074A JP 18976892 A JP18976892 A JP 18976892A JP 18976892 A JP18976892 A JP 18976892A JP H0637074 A JPH0637074 A JP H0637074A
- Authority
- JP
- Japan
- Prior art keywords
- reaction chamber
- thin film
- semiconductor manufacturing
- manufacturing apparatus
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はＣＶＤ装置・ドライエッ
チング装置等、反応チャンバを有する半導体製造装置の
反応チャンバ内のクリーニング方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning a reaction chamber of a semiconductor manufacturing apparatus having a reaction chamber such as a CVD apparatus and a dry etching apparatus.
【０００２】半導体デバイスの製造において、ＣＶＤ装
置やドライエッチング装置等、反応チャンバを有する装
置が多くの工程で使用されている。これらの装置では、
反応チャンバ内に反応生成物が付着堆積することは避け
られない。この反応生成物が剥落してパーティクルとな
って被処理物のウェーハ等に付着すると製造歩留りを低
下させることになるから、反応チャンバ内をクリーニン
グする必要がある。2. Description of the Related Art In manufacturing a semiconductor device, an apparatus having a reaction chamber such as a CVD apparatus or a dry etching apparatus is used in many processes. With these devices,
Accumulation of reaction products in the reaction chamber is inevitable. If the reaction product is peeled off and becomes particles and adheres to the wafer or the like of the object to be processed, the production yield is reduced, so that it is necessary to clean the inside of the reaction chamber.
【０００３】[0003]
【従来の技術】従来は、ＣＶＤ装置やドライエッチング
装置の反応チャンバ内のクリーニングは、反応生成物を
物理的に削り取る、又はクリーニングガスを流して反応
生成物を化学的に分解する、等の方法が取られて来た。2. Description of the Related Art Conventionally, for cleaning the inside of a reaction chamber of a CVD apparatus or a dry etching apparatus, a reaction product is physically scraped off, or a cleaning gas is passed to chemically decompose the reaction product. Has been taken.
【０００４】[0004]
【発明が解決しようとする課題】ところが、反応生成物
を物理的に削り取る方法ではパーティクルを飛散させる
ことになり、又、クリーニングガスを流して反応生成物
を化学的に分解する方法ではいろいろな形態の反応生成
物の総てを完全に分解出来るとは限らない、という問題
があった。However, in the method of physically scraping off the reaction product, particles are scattered, and in the method of flowing a cleaning gas to chemically decompose the reaction product, various forms are formed. There was a problem that not all of the reaction products of could be completely decomposed.
【０００５】本発明はこのような問題を解決して、反応
チャンバ内に付着堆積する反応生成物を完全に除去する
ことが可能な半導体製造装置のクリーニング方法を提供
することを目的とする。An object of the present invention is to solve the above problems and provide a method for cleaning a semiconductor manufacturing apparatus capable of completely removing the reaction products deposited and deposited in the reaction chamber.
【０００６】[0006]
【課題を解決するための手段】この目的は、本発明によ
れば、〔１〕反応チャンバを有する半導体製造装置のク
リーニング方法であって、該半導体製造装置使用前に予
め該反応チャンバの内面に該反応チャンバの内面表層を
構成する材料とは異なる材料の薄膜を被着し、該半導体
製造装置使用後に該薄膜を選択的にエッチングして該薄
膜上に付着した反応生成物を該薄膜と共に除去すること
を特徴とする半導体製造装置のクリーニング方法とする
ことで、〔２〕前記〔１〕において前記反応チャンバの
内面表層を構成する材料がアルミニウムを含み、前記薄
膜の材料がチタンであり、前記薄膜の選択的なエッチン
グは硫化水素ガスを用いたドライエッチングとすること
で、〔３〕前記〔１〕において前記薄膜の前記反応チャ
ンバの内面への被着はＣＶＤ法にて行うことで、〔４〕
前記〔１〕において前記薄膜をエッチングにより除去し
た後、該反応チャンバ内に不活性ガスを導入して該反応
チャンバ内をパージすることで、達成される。According to the present invention, there is provided a method for cleaning a semiconductor manufacturing apparatus having a reaction chamber, the method comprising: A thin film of a material different from the material forming the inner surface layer of the reaction chamber is deposited, and the thin film is selectively etched after the semiconductor manufacturing apparatus is used to remove reaction products attached to the thin film together with the thin film. According to the method for cleaning a semiconductor manufacturing apparatus, the material constituting the inner surface layer of the reaction chamber in [2] includes aluminum, and the material of the thin film is titanium. The selective etching of the thin film is performed by dry etching using hydrogen sulfide gas. [3] In [1], the thin film is coated on the inner surface of the reaction chamber. Than be carried out by a CVD method, [4]
This is achieved by removing the thin film by etching in [1] above and then introducing an inert gas into the reaction chamber to purge the inside of the reaction chamber.
【０００７】[0007]
【作用】種々の反応生成物にクリーニングガスを反応さ
せてこれを完全に除去することは困難であるが、反応チ
ャンバ自体をエッチングしてその表層を除去すれば、反
応生成物も完全に除去される。但し、これを繰り返せ
ば、当然、反応チャンバの肉厚が薄くなる。本発明では
装置使用前に反応チャンバの内壁を構成する材料と異な
る材料の薄膜を反応チャンバ内面に形成しておき、装置
使用後にこの薄膜を選択的にエッチングするから、これ
を繰り返しても反応チャンバの肉厚は変化しない。It is difficult to completely remove various reaction products by reacting the cleaning gas with them, but if the reaction chamber itself is etched to remove its surface layer, the reaction products are also completely removed. It However, if this is repeated, the wall thickness of the reaction chamber is naturally thinned. In the present invention, a thin film of a material different from the material forming the inner wall of the reaction chamber is formed on the inner surface of the reaction chamber before using the apparatus, and this thin film is selectively etched after the apparatus is used. Does not change its thickness.
【０００８】反応チャンバの材質はアルミニウム( Al )
であることが多い。チタン( Ti )の薄膜はこのアルミニ
ウムに対して密着性が良いから、使用中に剥離すること
はない。硫化水素( H2S ) は常温ではアルミニウムとは
反応せずチタンとは反応するから、チタンを選択的にエ
ッチングすることが出来る。 H2S と反応した Ti はTi
S となり、常温で分解する。チタン薄膜のエッチングは
反応チャンバ内を排気しながら行われるから、剥落した
反応生成物や上記 TiSは反応チャンバ外に排出される
が、エッチング後に不活性ガスによりパージすること
で、更に完全に除去される。The material of the reaction chamber is aluminum (Al)
Often Since the thin film of titanium (Ti) has good adhesion to this aluminum, it does not peel off during use. Hydrogen sulfide (H 2 S) does not react with aluminum at room temperature but with titanium, so that titanium can be selectively etched. Ti reacted with H 2 S is Ti
It becomes S and decomposes at room temperature. The titanium thin film is etched while the reaction chamber is evacuated, so the stripped reaction products and TiS are discharged to the outside of the reaction chamber, but they can be completely removed by purging with an inert gas after etching. It
【０００９】尚、シリコン・ウェーハの処理工程におい
てＣＶＤで一般的に使用されるガスは SiH4, SiH2Cl2,
PH3, PCl3, BF3, B2H6, Si(OC2H5)4, PO(OCH3)3, WF6等
であり、又、ドライエッチングで一般的に使用されるガ
スは CF4, CHF3, SiCl4, Cl2, CCl4, HBr 等である。従
って、これらと上記の H2Sによるクリーニングは全く異
質のものである。Gases commonly used in CVD in the process of processing silicon wafers are SiH 4 , SiH 2 Cl 2 ,
PH 3, PCl 3, BF 3 , B 2 H 6, Si (OC 2 H 5) 4, PO (OCH 3) is 3, WF 6, etc., also, the gas commonly used dry etching is CF 4 , CHF 3 , SiCl 4 , Cl 2 , CCl 4 , HBr, etc. Therefore, cleaning with these and the above H 2 S is completely different.
【００１０】[0010]
【実施例】本発明に係る半導体製造装置のクリーニング
方法の実施例を図１を参照しながら説明する。図１は本
発明の実施例の説明図であり、ＣＶＤ装置又はドライエ
ッチング装置の、クリーニングを行う反応チャンバを断
面図で示している。EXAMPLE An example of a cleaning method for a semiconductor manufacturing apparatus according to the present invention will be described with reference to FIG. FIG. 1 is an explanatory view of an embodiment of the present invention, which is a sectional view showing a reaction chamber for cleaning a CVD apparatus or a dry etching apparatus.
【００１１】図において、１はチャンバであり、本実施
例ではアルミニウム製である。チャンバ１内には被処理
物（半導体ウェーハ等）の保持部等があるが、図示は省
略した。11は排気口であり、真空ポンプに連通してい
る。12〜はガス導入口であり、それぞれガス供給系に接
続されている。例えば、ガス導入口12はパージガス、ガ
ス導入口13は反応ガスとクリーニングガス（切替えて導
入する）、ガス導入口14はチタン薄膜形成用の材料ガス
の各供給系に接続されている。２は薄膜であり、当初は
存在しない。In the figure, reference numeral 1 is a chamber, which is made of aluminum in this embodiment. Although there is a holding portion for the object to be processed (semiconductor wafer or the like) in the chamber 1, the illustration is omitted. An exhaust port 11 communicates with the vacuum pump. Reference numerals 12 to 12 are gas inlets, each connected to a gas supply system. For example, the gas introduction port 12 is connected to each supply system of a purge gas, the gas introduction port 13 is connected to a reaction gas and a cleaning gas (switched and introduced), and the gas introduction port 14 is connected to each supply system of a material gas for forming a titanium thin film. No. 2 is a thin film, and does not exist initially.
【００１２】反応チャンバ１のクリーニングは、次のよ
うにして行う。先ず、この装置を使用する前に（即ち、
被処理物のＣＶＤ又はドライエッチングを行う前に）、
反応チャンバ１の内面にチタンを被着して薄膜２を形成
する。この状態で装置を使用し、使用後は、先ず反応チ
ャンバ１内を排気しながらガス導入口13から反応チャン
バ１内に硫化水素ガスを導入する。このガスがチタンの
薄膜２を選択的にエッチングし、薄膜２が徐々に消滅し
て行くと共に薄膜２上に堆積した反応生成物も徐々に剥
落して排気口11から排出される。薄膜２が完全に消滅し
た後、硫化水素ガスの導入を停止し、代わりにガス導入
口12から窒素( N2 )ガスを導入して、反応チャンバ１内
をパージする。The cleaning of the reaction chamber 1 is performed as follows. First, before using this device (ie,
Before performing CVD or dry etching of the object),
Titanium is deposited on the inner surface of the reaction chamber 1 to form the thin film 2. The apparatus is used in this state, and after use, hydrogen sulfide gas is first introduced into the reaction chamber 1 through the gas introduction port 13 while exhausting the inside of the reaction chamber 1. This gas selectively etches the titanium thin film 2, the thin film 2 gradually disappears, and the reaction products deposited on the thin film 2 are gradually stripped off and exhausted from the exhaust port 11. After the thin film 2 has completely disappeared, the introduction of hydrogen sulfide gas is stopped, and nitrogen (N 2 ) gas is introduced instead from the gas introduction port 12 to purge the inside of the reaction chamber 1.
【００１３】以上の方法によりクリーニングしながら本
装置を繰り返し使用した結果、反応チャンバ１内に付着
堆積した反応生成物は常に完全に除去され、しかもパー
ティクルやクリーニングガスが反応チャンバ１内に残る
ことも、又、反応チャンバ１がクリーニングガスに侵さ
れることもなかった。As a result of repeatedly using this apparatus while cleaning by the above method, the reaction products adhered and deposited in the reaction chamber 1 are always completely removed, and particles and cleaning gas may remain in the reaction chamber 1. Moreover, the reaction chamber 1 was not attacked by the cleaning gas.
【００１４】尚、この装置がＣＶＤ装置の場合には、チ
タンの薄膜２をこの装置を用いてＣＶＤ法で形成するこ
とが出来る。この場合、材料ガスとしてはチタン有機化
合物ガスや塩化チタンガス等を用いる。When the apparatus is a CVD apparatus, the titanium thin film 2 can be formed by the CVD method using the apparatus. In this case, a titanium organic compound gas, titanium chloride gas, or the like is used as the material gas.
【００１５】本発明は以上の実施例に限定されることな
く、更に種々変形して実施することが出来る。例えば、
反応チャンバ１の内面表層だけがアルミニウムの場合で
も良く、又、反応チャンバ１と薄膜２とクリーニングガ
スがそれぞれアルミニウムとチタンと硫化水素という組
み合わせ以外であっても、クリーニングガスが薄膜２を
選択的にエッチングするものであれば本発明は有効であ
る。The present invention is not limited to the above embodiments, but can be implemented with various modifications. For example,
Only the inner surface layer of the reaction chamber 1 may be aluminum, or even if the reaction chamber 1 and the thin film 2 and the cleaning gas are other than the combination of aluminum, titanium and hydrogen sulfide, respectively, the cleaning gas selectively selects the thin film 2. The present invention is effective for etching.
【００１６】[0016]
【発明の効果】以上説明したように、本発明によれば、
反応チャンバ内に付着堆積する反応生成物を完全に除去
することが可能な半導体製造装置のクリーニング方法を
提供することが出来、半導体デバイス等の製造における
歩留り向上等に寄与する。As described above, according to the present invention,
It is possible to provide a method for cleaning a semiconductor manufacturing apparatus capable of completely removing a reaction product attached and deposited in a reaction chamber, which contributes to an improvement in yield in manufacturing semiconductor devices and the like.
【図１】 本発明の実施例の説明図である。FIG. 1 is an explanatory diagram of an example of the present invention.
１ 反応チャンバ ２ 薄膜 11 排気口 12, 13, 14 ガス導入口 1 Reaction chamber 2 Thin film 11 Exhaust port 12, 13, 14 Gas inlet port
Claims (4)
クリーニング方法であって、 該半導体製造装置使用前に予め該反応チャンバの内面に
該反応チャンバの内面表層を構成する材料とは異なる材
料の薄膜を被着し、該半導体製造装置使用後に該薄膜を
選択的にエッチングして該薄膜上に付着した反応生成物
を該薄膜と共に除去することを特徴とする半導体製造装
置のクリーニング方法。1. A method of cleaning a semiconductor manufacturing apparatus having a reaction chamber, wherein a thin film of a material different from a material forming an inner surface layer of the reaction chamber is previously formed on the inner surface of the reaction chamber before using the semiconductor manufacturing apparatus. A method for cleaning a semiconductor manufacturing apparatus, which comprises depositing and selectively etching the thin film after the use of the semiconductor manufacturing apparatus to remove the reaction product adhering to the thin film together with the thin film.
材料がアルミニウムを含み、前記薄膜の材料がチタンで
あり、前記薄膜の選択的なエッチングは硫化水素ガスを
用いたドライエッチングであることを特徴とする請求項
１記載の半導体製造装置のクリーニング方法。2. The material forming the inner surface layer of the reaction chamber contains aluminum, the material of the thin film is titanium, and the selective etching of the thin film is dry etching using hydrogen sulfide gas. The method for cleaning a semiconductor manufacturing apparatus according to claim 1.
被着はＣＶＤ法にて行うことを特徴とする請求項１記載
の半導体製造装置のクリーニング方法。3. The method for cleaning a semiconductor manufacturing apparatus according to claim 1, wherein the deposition of the thin film on the inner surface of the reaction chamber is performed by a CVD method.
後、該反応チャンバ内に不活性ガスを導入して該反応チ
ャンバ内をパージすることを特徴とする請求項１記載の
半導体製造装置のクリーニング方法。4. The method for cleaning a semiconductor manufacturing apparatus according to claim 1, wherein after the thin film is removed by etching, an inert gas is introduced into the reaction chamber to purge the inside of the reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18976892A JPH0637074A (en) | 1992-07-17 | 1992-07-17 | Cleaning method for semiconductor manufacturing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18976892A JPH0637074A (en) | 1992-07-17 | 1992-07-17 | Cleaning method for semiconductor manufacturing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0637074A true JPH0637074A (en) | 1994-02-10 |
Family
ID=16246869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18976892A Withdrawn JPH0637074A (en) | 1992-07-17 | 1992-07-17 | Cleaning method for semiconductor manufacturing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0637074A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5133797A (en) * | 1988-04-06 | 1992-07-28 | Sumitomo Chemical Company, Ltd. | Coated granular fertilizer composition and its production |
| US5963834A (en) * | 1996-12-20 | 1999-10-05 | Tokyo Electron Limited | Method for forming a CVD film |
| US6306770B1 (en) | 1998-03-20 | 2001-10-23 | Nec Corporation | Method and apparatus for plasma etching |
| JP2006278594A (en) * | 2005-03-29 | 2006-10-12 | Hitachi Kokusai Electric Inc | Manufacturing method of semiconductor device |
| EP2281914A1 (en) * | 2008-04-30 | 2011-02-09 | Ulvac, Inc. | PROCESS FOR PRODUCTION OF WATER-REACTIVE Al FILM AND CONSTITUENT MEMBERS FOR FILM DEPOSITION CHAMBERS |
| EP2284291A1 (en) * | 2008-04-30 | 2011-02-16 | Ulvac, Inc. | WATER-REACTIVE Al COMPOSITE MATERIAL, WATER-REACTIVE Al FILM, METHOD FOR PRODUCTION OF THE AL FILM, AND STRUCTURAL MEMBER FOR FILM-FORMING CHAMBER |
| WO2021199479A1 (en) * | 2020-04-01 | 2021-10-07 | キヤノンアネルバ株式会社 | Film formation device, device for controlling film formation device, and film formation method |
| CN115427606A (en) * | 2020-04-01 | 2022-12-02 | 佳能安内华股份有限公司 | Film forming apparatus, control apparatus for film forming apparatus, and film forming method |
-
1992
- 1992-07-17 JP JP18976892A patent/JPH0637074A/en not_active Withdrawn
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5133797A (en) * | 1988-04-06 | 1992-07-28 | Sumitomo Chemical Company, Ltd. | Coated granular fertilizer composition and its production |
| US5963834A (en) * | 1996-12-20 | 1999-10-05 | Tokyo Electron Limited | Method for forming a CVD film |
| US6306770B1 (en) | 1998-03-20 | 2001-10-23 | Nec Corporation | Method and apparatus for plasma etching |
| JP2006278594A (en) * | 2005-03-29 | 2006-10-12 | Hitachi Kokusai Electric Inc | Manufacturing method of semiconductor device |
| JP4703230B2 (en) * | 2005-03-29 | 2011-06-15 | 株式会社日立国際電気 | Semiconductor device manufacturing method and substrate processing apparatus |
| EP2281914A1 (en) * | 2008-04-30 | 2011-02-09 | Ulvac, Inc. | PROCESS FOR PRODUCTION OF WATER-REACTIVE Al FILM AND CONSTITUENT MEMBERS FOR FILM DEPOSITION CHAMBERS |
| EP2284291A1 (en) * | 2008-04-30 | 2011-02-16 | Ulvac, Inc. | WATER-REACTIVE Al COMPOSITE MATERIAL, WATER-REACTIVE Al FILM, METHOD FOR PRODUCTION OF THE AL FILM, AND STRUCTURAL MEMBER FOR FILM-FORMING CHAMBER |
| EP2281914A4 (en) * | 2008-04-30 | 2011-04-20 | Ulvac Inc | PROCESS FOR PRODUCTION OF WATER-REACTIVE Al FILM AND CONSTITUENT MEMBERS FOR FILM DEPOSITION CHAMBERS |
| EP2284291A4 (en) * | 2008-04-30 | 2011-04-20 | Ulvac Inc | WATER-REACTIVE Al COMPOSITE MATERIAL, WATER-REACTIVE Al FILM, METHOD FOR PRODUCTION OF THE AL FILM, AND STRUCTURAL MEMBER FOR FILM-FORMING CHAMBER |
| WO2021199479A1 (en) * | 2020-04-01 | 2021-10-07 | キヤノンアネルバ株式会社 | Film formation device, device for controlling film formation device, and film formation method |
| CN115427606A (en) * | 2020-04-01 | 2022-12-02 | 佳能安内华股份有限公司 | Film forming apparatus, control apparatus for film forming apparatus, and film forming method |
| CN115427606B (en) * | 2020-04-01 | 2024-01-02 | 佳能安内华股份有限公司 | Film forming apparatus, control apparatus for film forming apparatus, and film forming method |
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