KR20210111271A - 노광 장치 - Google Patents

노광 장치 Download PDF

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Publication number
KR20210111271A
KR20210111271A KR1020217023788A KR20217023788A KR20210111271A KR 20210111271 A KR20210111271 A KR 20210111271A KR 1020217023788 A KR1020217023788 A KR 1020217023788A KR 20217023788 A KR20217023788 A KR 20217023788A KR 20210111271 A KR20210111271 A KR 20210111271A
Authority
KR
South Korea
Prior art keywords
exposure
optical system
substrate
exposure apparatus
projection optical
Prior art date
Application number
KR1020217023788A
Other languages
English (en)
Korean (ko)
Inventor
료헤이 요시다
마사타카 이다
다이스케 요시다
다쿠미 노지마
유스케 마츠하시
노부아키 와타나베
Original Assignee
가부시키가이샤 니콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
Publication of KR20210111271A publication Critical patent/KR20210111271A/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020217023788A 2019-01-09 2019-12-16 노광 장치 KR20210111271A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019002235 2019-01-09
JPJP-P-2019-002235 2019-01-09
PCT/JP2019/049137 WO2020145044A1 (ja) 2019-01-09 2019-12-16 露光装置

Publications (1)

Publication Number Publication Date
KR20210111271A true KR20210111271A (ko) 2021-09-10

Family

ID=71521284

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217023788A KR20210111271A (ko) 2019-01-09 2019-12-16 노광 장치

Country Status (5)

Country Link
JP (1) JPWO2020145044A1 (zh)
KR (1) KR20210111271A (zh)
CN (1) CN113272737B (zh)
TW (1) TWI828831B (zh)
WO (1) WO2020145044A1 (zh)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016054230A (ja) 2014-09-04 2016-04-14 キヤノン株式会社 投影露光装置及び露光方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001060546A (ja) * 1999-08-20 2001-03-06 Nikon Corp 露光方法及び露光装置
JP2001297975A (ja) * 2000-04-17 2001-10-26 Nikon Corp 露光装置及び露光方法
JP2002258489A (ja) * 2000-04-20 2002-09-11 Nikon Corp 露光装置および露光方法
KR101441840B1 (ko) * 2003-09-29 2014-11-04 가부시키가이샤 니콘 노광장치, 노광방법 및 디바이스 제조방법
JP4705034B2 (ja) * 2004-08-12 2011-06-22 株式会社ニコン 基板処理装置、使用状況確認方法
EP1975720A4 (en) * 2005-12-09 2010-05-05 Nikon Corp LASER LIGHT SOURCE DEVICE, EXPOSURE METHOD AND EQUIPMENT
JP6519109B2 (ja) * 2014-07-17 2019-05-29 株式会社ニコン 露光方法及び装置、並びにデバイス製造方法
JP7052242B2 (ja) * 2017-07-25 2022-04-12 凸版印刷株式会社 露光装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016054230A (ja) 2014-09-04 2016-04-14 キヤノン株式会社 投影露光装置及び露光方法

Also Published As

Publication number Publication date
WO2020145044A1 (ja) 2020-07-16
CN113272737B (zh) 2024-03-15
JPWO2020145044A1 (ja) 2021-11-18
CN113272737A (zh) 2021-08-17
TWI828831B (zh) 2024-01-11
TW202032287A (zh) 2020-09-01

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