KR20210095628A - 반도체 장치를 제조하는 방법, 광흡수 적층체, 및 가고정용 적층체 - Google Patents

반도체 장치를 제조하는 방법, 광흡수 적층체, 및 가고정용 적층체 Download PDF

Info

Publication number
KR20210095628A
KR20210095628A KR1020217014934A KR20217014934A KR20210095628A KR 20210095628 A KR20210095628 A KR 20210095628A KR 1020217014934 A KR1020217014934 A KR 1020217014934A KR 20217014934 A KR20217014934 A KR 20217014934A KR 20210095628 A KR20210095628 A KR 20210095628A
Authority
KR
South Korea
Prior art keywords
layer
light
curable resin
support member
meth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020217014934A
Other languages
English (en)
Korean (ko)
Inventor
게이스케 니시도
에미 미야자와
야스유키 오오야마
다카시 가와모리
유타 아카스
도시아키 시라사카
나오야 스즈키
츠요시 하야사카
Original Assignee
쇼와덴코머티리얼즈가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쇼와덴코머티리얼즈가부시끼가이샤 filed Critical 쇼와덴코머티리얼즈가부시끼가이샤
Publication of KR20210095628A publication Critical patent/KR20210095628A/ko
Pending legal-status Critical Current

Links

Images

Classifications

    • H01L21/561—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/014—Manufacture or treatment using batch processing
    • H01L21/304—
    • H01L21/6836—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H01L2221/68318—
    • H01L2221/68327—
    • H01L2221/6834—
    • H01L2221/68381—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/141—Feedstock
    • Y02P20/143—Feedstock the feedstock being recycled material, e.g. plastics
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
    • Y02W30/00—Technologies for solid waste management
    • Y02W30/50—Reuse, recycling or recovery technologies
    • Y02W30/62—Plastics recycling; Rubber recycling

Landscapes

  • Laminated Bodies (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
KR1020217014934A 2018-11-29 2019-11-28 반도체 장치를 제조하는 방법, 광흡수 적층체, 및 가고정용 적층체 Pending KR20210095628A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2018-223456 2018-11-29
JP2018223456 2018-11-29
PCT/JP2019/046636 WO2020111193A1 (ja) 2018-11-29 2019-11-28 半導体装置を製造する方法、光吸収積層体、及び仮固定用積層体

Publications (1)

Publication Number Publication Date
KR20210095628A true KR20210095628A (ko) 2021-08-02

Family

ID=70853019

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217014934A Pending KR20210095628A (ko) 2018-11-29 2019-11-28 반도체 장치를 제조하는 방법, 광흡수 적층체, 및 가고정용 적층체

Country Status (5)

Country Link
JP (2) JP7712080B2 (https=)
KR (1) KR20210095628A (https=)
CN (1) CN113169038A (https=)
TW (1) TWI844589B (https=)
WO (1) WO2020111193A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021090832A1 (ja) * 2019-11-05 2021-05-14 日産化学株式会社 パターニングされた単層位相差材の製造方法
WO2022071431A1 (ja) 2020-10-02 2022-04-07 昭和電工マテリアルズ株式会社 半導体装置を製造する方法、仮固定用フィルム材を製造する方法、及び、仮固定用フィルム材
CN116323750A (zh) 2020-10-02 2023-06-23 株式会社力森诺科 临时固定用膜、临时固定用层叠体及半导体装置的制造方法
WO2023032165A1 (ja) 2021-09-03 2023-03-09 昭和電工マテリアルズ株式会社 仮固定用フィルム、仮固定用積層体、及び半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012126803A (ja) 2010-12-14 2012-07-05 Sumitomo Bakelite Co Ltd 仮固定剤および基材の加工方法
JP2013033814A (ja) 2011-08-01 2013-02-14 Jsr Corp 基材の処理方法、半導体装置および仮固定用組成物
JP2016138182A (ja) 2015-01-27 2016-08-04 デンカ株式会社 仮固定用接着剤組成物、それを用いた部材の仮固定方法及び硬化体残渣の除去方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006286768A (ja) * 2005-03-31 2006-10-19 Toshiba Corp 電子機器およびその実装方法
US20060286768A1 (en) * 2005-06-16 2006-12-21 Intel Corporation Method of supporting microelectronic wafer during backside processing
US20130087959A1 (en) * 2010-06-16 2013-04-11 3M Innovative Properties Company Opitcally tuned metalized light to heat conversion layer for wafer support system
JP6068279B2 (ja) * 2012-12-27 2017-01-25 富士フイルム株式会社 半導体装置製造用仮接合層、積層体、及び、半導体装置の製造方法
JP2016048729A (ja) * 2014-08-27 2016-04-07 株式会社東芝 仮接着用支持基板及び半導体デバイスの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012126803A (ja) 2010-12-14 2012-07-05 Sumitomo Bakelite Co Ltd 仮固定剤および基材の加工方法
JP2013033814A (ja) 2011-08-01 2013-02-14 Jsr Corp 基材の処理方法、半導体装置および仮固定用組成物
JP2016138182A (ja) 2015-01-27 2016-08-04 デンカ株式会社 仮固定用接着剤組成物、それを用いた部材の仮固定方法及び硬化体残渣の除去方法

Also Published As

Publication number Publication date
CN113169038A (zh) 2021-07-23
TWI844589B (zh) 2024-06-11
JP7712080B2 (ja) 2025-07-23
JPWO2020111193A1 (ja) 2021-10-21
JP7831522B2 (ja) 2026-03-17
JP2024133308A (ja) 2024-10-01
TW202036663A (zh) 2020-10-01
TW202433610A (zh) 2024-08-16
WO2020111193A1 (ja) 2020-06-04

Similar Documents

Publication Publication Date Title
CN111418044B (zh) 半导体装置的制造方法、临时固定材用固化性树脂组合物、临时固定材用膜以及临时固定材用层叠膜
KR20210095628A (ko) 반도체 장치를 제조하는 방법, 광흡수 적층체, 및 가고정용 적층체
JP7414005B2 (ja) 半導体装置の製造方法及び仮固定材用積層フィルム
US20250046626A1 (en) Semiconductor device manufacturing method
TWI856990B (zh) 半導體裝置的製造方法及積層體
KR20230017772A (ko) 가고정용 적층 필름 및 그 제조 방법, 가고정용 적층체, 및 반도체 장치의 제조 방법
TWI893221B (zh) 暫時固定用膜、暫時固定用積層體及半導體裝置的製造方法
JP7388004B2 (ja) 半導体装置の製造方法
JP2021111645A (ja) 仮固定用の樹脂組成物と樹脂フィルム及び半導体装置の製造方法
US12538751B2 (en) Method for manufacturing semiconductor device, method for manufacturing film material for temporary fixing, and film material for temporary fixing
WO2022181636A1 (ja) 半導体装置を製造する方法、仮固定用フィルム材を製造する方法、及び、仮固定用フィルム材
TWI917941B (zh) 製造半導體裝置的方法、光吸收積層體及暫時固定用積層體

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11 Administrative time limit extension requested

Free format text: ST27 STATUS EVENT CODE: U-3-3-T10-T11-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11 Administrative time limit extension requested

Free format text: ST27 STATUS EVENT CODE: U-3-3-T10-T11-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13 Pre-grant limitation requested

Free format text: ST27 STATUS EVENT CODE: A-2-3-E10-E13-LIM-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

D22 Grant of ip right intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D22-EXM-PE0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701