CN113169038A - 制造半导体装置的方法、光吸收层叠体以及临时固定用层叠体 - Google Patents

制造半导体装置的方法、光吸收层叠体以及临时固定用层叠体 Download PDF

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Publication number
CN113169038A
CN113169038A CN201980077968.5A CN201980077968A CN113169038A CN 113169038 A CN113169038 A CN 113169038A CN 201980077968 A CN201980077968 A CN 201980077968A CN 113169038 A CN113169038 A CN 113169038A
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CN
China
Prior art keywords
layer
light
curable resin
support member
temporary fixing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201980077968.5A
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English (en)
Chinese (zh)
Inventor
西户圭祐
宫泽笑
大山恭之
川守崇司
赤须雄太
白坂敏明
铃木直也
早坂刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Publication of CN113169038A publication Critical patent/CN113169038A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/014—Manufacture or treatment using batch processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/141—Feedstock
    • Y02P20/143—Feedstock the feedstock being recycled material, e.g. plastics
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
    • Y02W30/00—Technologies for solid waste management
    • Y02W30/50—Reuse, recycling or recovery technologies
    • Y02W30/62—Plastics recycling; Rubber recycling

Landscapes

  • Laminated Bodies (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
CN201980077968.5A 2018-11-29 2019-11-28 制造半导体装置的方法、光吸收层叠体以及临时固定用层叠体 Pending CN113169038A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018-223456 2018-11-29
JP2018223456 2018-11-29
PCT/JP2019/046636 WO2020111193A1 (ja) 2018-11-29 2019-11-28 半導体装置を製造する方法、光吸収積層体、及び仮固定用積層体

Publications (1)

Publication Number Publication Date
CN113169038A true CN113169038A (zh) 2021-07-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980077968.5A Pending CN113169038A (zh) 2018-11-29 2019-11-28 制造半导体装置的方法、光吸收层叠体以及临时固定用层叠体

Country Status (5)

Country Link
JP (2) JP7712080B2 (https=)
KR (1) KR20210095628A (https=)
CN (1) CN113169038A (https=)
TW (1) TWI844589B (https=)
WO (1) WO2020111193A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021090832A1 (ja) * 2019-11-05 2021-05-14 日産化学株式会社 パターニングされた単層位相差材の製造方法
WO2022071431A1 (ja) 2020-10-02 2022-04-07 昭和電工マテリアルズ株式会社 半導体装置を製造する方法、仮固定用フィルム材を製造する方法、及び、仮固定用フィルム材
CN116323750A (zh) 2020-10-02 2023-06-23 株式会社力森诺科 临时固定用膜、临时固定用层叠体及半导体装置的制造方法
WO2023032165A1 (ja) 2021-09-03 2023-03-09 昭和電工マテリアルズ株式会社 仮固定用フィルム、仮固定用積層体、及び半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006286768A (ja) * 2005-03-31 2006-10-19 Toshiba Corp 電子機器およびその実装方法
WO2011159456A2 (en) * 2010-06-16 2011-12-22 3M Innovative Properties Company Optically tuned metalized light to heat conversion layer for wafer support system
US20160064265A1 (en) * 2014-08-27 2016-03-03 Kabushiki Kaisha Toshiba Temporarily bonding support substrate and semiconductor device manufacturing method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060286768A1 (en) * 2005-06-16 2006-12-21 Intel Corporation Method of supporting microelectronic wafer during backside processing
JP5789974B2 (ja) 2010-12-14 2015-10-07 住友ベークライト株式会社 仮固定剤および基材の加工方法
JP5861304B2 (ja) 2011-08-01 2016-02-16 Jsr株式会社 基材の処理方法、半導体装置および仮固定用組成物
JP6068279B2 (ja) * 2012-12-27 2017-01-25 富士フイルム株式会社 半導体装置製造用仮接合層、積層体、及び、半導体装置の製造方法
JP6404723B2 (ja) 2015-01-27 2018-10-17 デンカ株式会社 仮固定用接着剤組成物、それを用いた部材の仮固定方法及び硬化体残渣の除去方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006286768A (ja) * 2005-03-31 2006-10-19 Toshiba Corp 電子機器およびその実装方法
WO2011159456A2 (en) * 2010-06-16 2011-12-22 3M Innovative Properties Company Optically tuned metalized light to heat conversion layer for wafer support system
US20160064265A1 (en) * 2014-08-27 2016-03-03 Kabushiki Kaisha Toshiba Temporarily bonding support substrate and semiconductor device manufacturing method

Also Published As

Publication number Publication date
TWI844589B (zh) 2024-06-11
KR20210095628A (ko) 2021-08-02
JP7712080B2 (ja) 2025-07-23
JPWO2020111193A1 (ja) 2021-10-21
JP7831522B2 (ja) 2026-03-17
JP2024133308A (ja) 2024-10-01
TW202036663A (zh) 2020-10-01
TW202433610A (zh) 2024-08-16
WO2020111193A1 (ja) 2020-06-04

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Address before: Tokyo, Japan

Applicant before: Showa electrical materials Co.,Ltd.