KR20210082099A - 유기 수식 금속 산화물 나노 입자, 유기 수식 금속 산화물 나노 입자 함유 용액, 유기 수식 금속 산화물 나노 입자 함유 레지스트 조성물 및 레지스트 패턴 형성 방법 - Google Patents

유기 수식 금속 산화물 나노 입자, 유기 수식 금속 산화물 나노 입자 함유 용액, 유기 수식 금속 산화물 나노 입자 함유 레지스트 조성물 및 레지스트 패턴 형성 방법 Download PDF

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Publication number
KR20210082099A
KR20210082099A KR1020200181362A KR20200181362A KR20210082099A KR 20210082099 A KR20210082099 A KR 20210082099A KR 1020200181362 A KR1020200181362 A KR 1020200181362A KR 20200181362 A KR20200181362 A KR 20200181362A KR 20210082099 A KR20210082099 A KR 20210082099A
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KR
South Korea
Prior art keywords
group
metal oxide
oxide nanoparticles
modified metal
organic
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Application number
KR1020200181362A
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English (en)
Korean (ko)
Inventor
기와무 스에
쇼 가타오카
유스케 요시고에
다카토시 이나리
마사토시 아라이
다카야 마에하시
요시타카 고무로
다이스케 가와나
Original Assignee
고쿠리츠켄큐카이하츠호진 상교기쥬츠 소고켄큐쇼
도오꾜오까고오교 가부시끼가이샤
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Application filed by 고쿠리츠켄큐카이하츠호진 상교기쥬츠 소고켄큐쇼, 도오꾜오까고오교 가부시끼가이샤 filed Critical 고쿠리츠켄큐카이하츠호진 상교기쥬츠 소고켄큐쇼
Publication of KR20210082099A publication Critical patent/KR20210082099A/ko

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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0042Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
KR1020200181362A 2019-12-24 2020-12-22 유기 수식 금속 산화물 나노 입자, 유기 수식 금속 산화물 나노 입자 함유 용액, 유기 수식 금속 산화물 나노 입자 함유 레지스트 조성물 및 레지스트 패턴 형성 방법 KR20210082099A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2019233068 2019-12-24
JPJP-P-2019-233068 2019-12-24
JP2020207558A JP2021102604A (ja) 2019-12-24 2020-12-15 有機修飾金属酸化物ナノ粒子、有機修飾金属酸化物ナノ粒子含有溶液、有機修飾金属酸化物ナノ粒子含有レジスト組成物及びレジストパターン形成方法
JPJP-P-2020-207558 2020-12-15

Publications (1)

Publication Number Publication Date
KR20210082099A true KR20210082099A (ko) 2021-07-02

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KR1020200181362A KR20210082099A (ko) 2019-12-24 2020-12-22 유기 수식 금속 산화물 나노 입자, 유기 수식 금속 산화물 나노 입자 함유 용액, 유기 수식 금속 산화물 나노 입자 함유 레지스트 조성물 및 레지스트 패턴 형성 방법

Country Status (3)

Country Link
JP (1) JP2021102604A (ja)
KR (1) KR20210082099A (ja)
TW (1) TW202128566A (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202414534A (zh) * 2022-07-29 2024-04-01 日商東京威力科創股份有限公司 基板處理方法及基板處理系統
WO2024100964A1 (ja) * 2022-11-09 2024-05-16 サンアプロ株式会社 有機金属化合物、スルホニウム塩型化合物、ノニオンオキシム型化合物、感光材、酸発生剤、及びフォトレジスト
WO2024106167A1 (ja) * 2022-11-17 2024-05-23 三菱ケミカル株式会社 遷移金属クラスター化合物、感光性組成物及びパターン形成方法
WO2024142879A1 (ja) * 2022-12-26 2024-07-04 三菱ケミカル株式会社 遷移金属クラスター化合物、感光性組成物、パターン形成方法、基板の製造方法
WO2024143204A1 (ja) * 2022-12-26 2024-07-04 三菱ケミカル株式会社 金属化合物、感光性組成物、パターン形成方法、基板の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001072716A (ja) 1999-07-12 2001-03-21 Internatl Business Mach Corp <Ibm> 有機金属重合体およびその使用
JP2012185484A (ja) 2011-02-15 2012-09-27 Shin Etsu Chem Co Ltd レジスト材料及びこれを用いたパターン形成方法
JP2015108781A (ja) 2013-12-05 2015-06-11 東京応化工業株式会社 ネガ型レジスト組成物、レジストパターン形成方法及び錯体
JP2015157807A (ja) 2014-02-14 2015-09-03 コーネル ユニバーシティCornell University 金属酸化物ナノ粒子およびフォトレジスト組成物
JP2017173537A (ja) 2016-03-23 2017-09-28 株式会社先端ナノプロセス基盤開発センター 感光性組成物およびパターン形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001072716A (ja) 1999-07-12 2001-03-21 Internatl Business Mach Corp <Ibm> 有機金属重合体およびその使用
JP2012185484A (ja) 2011-02-15 2012-09-27 Shin Etsu Chem Co Ltd レジスト材料及びこれを用いたパターン形成方法
JP2015108781A (ja) 2013-12-05 2015-06-11 東京応化工業株式会社 ネガ型レジスト組成物、レジストパターン形成方法及び錯体
JP2015157807A (ja) 2014-02-14 2015-09-03 コーネル ユニバーシティCornell University 金属酸化物ナノ粒子およびフォトレジスト組成物
JP2017173537A (ja) 2016-03-23 2017-09-28 株式会社先端ナノプロセス基盤開発センター 感光性組成物およびパターン形成方法

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TW202128566A (zh) 2021-08-01
JP2021102604A (ja) 2021-07-15

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