KR20210019399A - 플라즈마 처리 장치 및 플라즈마 처리 장치의 고주파 전원을 제어하는 방법 - Google Patents
플라즈마 처리 장치 및 플라즈마 처리 장치의 고주파 전원을 제어하는 방법 Download PDFInfo
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- KR20210019399A KR20210019399A KR1020207007023A KR20207007023A KR20210019399A KR 20210019399 A KR20210019399 A KR 20210019399A KR 1020207007023 A KR1020207007023 A KR 1020207007023A KR 20207007023 A KR20207007023 A KR 20207007023A KR 20210019399 A KR20210019399 A KR 20210019399A
- Authority
- KR
- South Korea
- Prior art keywords
- frequency power
- high frequency
- focus ring
- plasma processing
- processing apparatus
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 29
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000005259 measurement Methods 0.000 claims description 32
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 description 25
- 238000001020 plasma etching Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 101001139126 Homo sapiens Krueppel-like factor 6 Proteins 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000013626 chemical specie Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2018-111973 | 2018-06-12 | ||
JP2018111973A JP6846384B2 (ja) | 2018-06-12 | 2018-06-12 | プラズマ処理装置及びプラズマ処理装置の高周波電源を制御する方法 |
PCT/JP2019/022024 WO2019239944A1 (ja) | 2018-06-12 | 2019-06-03 | プラズマ処理装置及びプラズマ処理装置の高周波電源を制御する方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20210019399A true KR20210019399A (ko) | 2021-02-22 |
Family
ID=68842142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020207007023A KR20210019399A (ko) | 2018-06-12 | 2019-06-03 | 플라즈마 처리 장치 및 플라즈마 처리 장치의 고주파 전원을 제어하는 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11264208B2 (zh) |
JP (1) | JP6846384B2 (zh) |
KR (1) | KR20210019399A (zh) |
CN (1) | CN111095497B (zh) |
TW (1) | TWI814837B (zh) |
WO (1) | WO2019239944A1 (zh) |
Families Citing this family (20)
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US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
KR20210107716A (ko) | 2019-01-22 | 2021-09-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 펄스 전압 파형을 제어하기 위한 피드백 루프 |
US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
US11462388B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Plasma processing assembly using pulsed-voltage and radio-frequency power |
JP7505959B2 (ja) | 2020-10-16 | 2024-06-25 | 東京エレクトロン株式会社 | 基板処理システム、制御方法及び制御プログラム |
CN112538619A (zh) * | 2020-11-05 | 2021-03-23 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | 一种射频电源的控制方法及装置 |
US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
US11984306B2 (en) | 2021-06-09 | 2024-05-14 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
WO2024070268A1 (ja) * | 2022-09-29 | 2024-04-04 | 東京エレクトロン株式会社 | プラズマ処理装置及びエッチング方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2003124201A (ja) | 2001-07-27 | 2003-04-25 | Tokyo Electron Ltd | プラズマ処理装置および基板載置台 |
JP2014186994A (ja) | 2013-02-20 | 2014-10-02 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
Family Cites Families (20)
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JP3173693B2 (ja) * | 1993-10-04 | 2001-06-04 | 東京エレクトロン株式会社 | プラズマ処理装置及びその方法 |
TWI488236B (zh) * | 2003-09-05 | 2015-06-11 | Tokyo Electron Ltd | Focusing ring and plasma processing device |
JP4421874B2 (ja) * | 2003-10-31 | 2010-02-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP4672456B2 (ja) * | 2004-06-21 | 2011-04-20 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP4884047B2 (ja) * | 2006-03-23 | 2012-02-22 | 東京エレクトロン株式会社 | プラズマ処理方法 |
JP4597894B2 (ja) * | 2006-03-31 | 2010-12-15 | 東京エレクトロン株式会社 | 基板載置台および基板処理装置 |
JP4833890B2 (ja) * | 2007-03-12 | 2011-12-07 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ分布補正方法 |
US9536711B2 (en) * | 2007-03-30 | 2017-01-03 | Lam Research Corporation | Method and apparatus for DC voltage control on RF-powered electrode |
US8563619B2 (en) * | 2007-06-28 | 2013-10-22 | Lam Research Corporation | Methods and arrangements for plasma processing system with tunable capacitance |
JP5371466B2 (ja) * | 2009-02-12 | 2013-12-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
JP5657262B2 (ja) * | 2009-03-27 | 2015-01-21 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5227264B2 (ja) * | 2009-06-02 | 2013-07-03 | 東京エレクトロン株式会社 | プラズマ処理装置,プラズマ処理方法,プログラム |
JP5563347B2 (ja) * | 2010-03-30 | 2014-07-30 | 東京エレクトロン株式会社 | プラズマ処理装置及び半導体装置の製造方法 |
JP5864879B2 (ja) * | 2011-03-31 | 2016-02-17 | 東京エレクトロン株式会社 | 基板処理装置及びその制御方法 |
KR20160101021A (ko) * | 2013-12-17 | 2016-08-24 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 밀도를 제어하는 시스템 및 방법 |
JP6244518B2 (ja) * | 2014-04-09 | 2017-12-13 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP2016031955A (ja) * | 2014-07-28 | 2016-03-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
JP2017028111A (ja) * | 2015-07-23 | 2017-02-02 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP6541623B2 (ja) * | 2016-06-20 | 2019-07-10 | 東京エレクトロン株式会社 | プラズマ処理装置、及び波形補正方法 |
JP6826955B2 (ja) * | 2017-06-14 | 2021-02-10 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
-
2018
- 2018-06-12 JP JP2018111973A patent/JP6846384B2/ja active Active
-
2019
- 2019-06-03 KR KR1020207007023A patent/KR20210019399A/ko unknown
- 2019-06-03 US US16/645,695 patent/US11264208B2/en active Active
- 2019-06-03 WO PCT/JP2019/022024 patent/WO2019239944A1/ja active Application Filing
- 2019-06-03 CN CN201980004435.4A patent/CN111095497B/zh active Active
- 2019-06-06 TW TW108119645A patent/TWI814837B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003124201A (ja) | 2001-07-27 | 2003-04-25 | Tokyo Electron Ltd | プラズマ処理装置および基板載置台 |
JP2014186994A (ja) | 2013-02-20 | 2014-10-02 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2019239944A1 (ja) | 2019-12-19 |
JP2019216164A (ja) | 2019-12-19 |
US11264208B2 (en) | 2022-03-01 |
CN111095497B (zh) | 2024-05-07 |
TWI814837B (zh) | 2023-09-11 |
TW202013425A (zh) | 2020-04-01 |
US20200266035A1 (en) | 2020-08-20 |
JP6846384B2 (ja) | 2021-03-24 |
CN111095497A (zh) | 2020-05-01 |
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