KR20200137657A - Semiconductor device - Google Patents

Abstract

Disclosed is a semiconductor device. The semiconductor device comprises: a substrate; a semiconductor structure including a first conductive semiconductor layer and a second conductive semiconductor layer arranged on the substrate, an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer, and a recess penetrating the second conductive semiconductor layer and the active layer; a first electrode arranged on the first conductive semiconductor layer; a second electrode arranged on the second conductive semiconductor layer; a first pad arranged on the first electrode; a plurality of second pads separately arranged on the second electrode; and insulating layers arranged on the first electrode and the second electrode. The second conductive semiconductor layer comprises: a main body part extending in a first direction; and a branch part extending in a second direction perpendicular to the first direction from the main body part. The insulating layer comprises a first hole arranged in the branch part, the second pad is electrically connected to the second electrode through the first hole, and the length of the main body part in the second direction is greater than the length of the branch part in the first direction. According to the present invention, it is possible to implement the semiconductor device with excellent electrical properties in a flip chip shape.

Description

Semiconductor device {SEMICONDUCTOR DEVICE}

The embodiment relates to a semiconductor device.

A semiconductor device including a compound such as GaN or AlGaN has many advantages, such as having a wide and easily adjustable band gap energy, and thus can be variously used as a light emitting device, a light receiving device, and various diodes.

In particular, light-emitting devices such as light emitting diodes and laser diodes using a group 3-5 or group 2-6 compound semiconductor material of semiconductors are red, green, and red by the development of thin film growth technology and device materials. Various colors such as blue and ultraviolet light can be implemented, and efficient white light can be realized by using fluorescent materials or by combining colors. Low power consumption, semi-permanent life, and fast response speed compared to conventional light sources such as fluorescent lamps and incandescent lamps. , Has the advantages of safety and environmental friendliness.

In addition, when photo-receiving devices such as photodetectors and solar cells are also manufactured using compound semiconductor materials of groups 3-5 or 2-6 of semiconductors, the development of device materials generates photocurrent by absorbing light in various wavelength ranges. By doing so, light in various wavelength ranges from gamma rays to radio wavelength ranges can be used. In addition, it has the advantages of fast response speed, safety, environmental friendliness, and easy adjustment of device materials, so it can be easily used for power control or ultra-high frequency circuits or communication modules.

Therefore, the semiconductor device can replace the transmission module of the optical communication means, the light emitting diode backlight that replaces the cold cathode fluorescent lamp (CCFL) constituting the backlight of the LCD (Liquid Crystal Display) display device, and a fluorescent lamp or incandescent bulb. Applications are expanding to white light-emitting diode lighting devices, automobile headlights, traffic lights, and sensors that detect gas or fire. In addition, the application of the semiconductor device can be extended to high-frequency application circuits, other power control devices, and communication modules.

In particular, the light emitting device emitting light in the ultraviolet wavelength range can be used for curing, medical, and sterilization by performing a curing or sterilizing action.

Although research on ultraviolet light emitting devices is active in recent years, there is a problem that it is still difficult to implement ultraviolet light emitting devices with flip chips.

The embodiment provides a flip-chip type semiconductor device.

In addition, an ohmic contact area is increased to provide a semiconductor device with improved electrical characteristics.

In addition, there is provided a semiconductor device with improved light output due to an increase in electrode length.

The problems to be solved in the examples are not limited thereto, and the objectives and effects that can be grasped from the solutions or embodiments of the problems described below are also included.

A semiconductor device according to an embodiment includes a substrate; A first conductivity type semiconductor layer, a second conductivity type semiconductor layer disposed on the substrate, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and the second conductivity type A semiconductor structure including a semiconductor layer and a recess penetrating the active layer; A first electrode disposed on the first conductivity type semiconductor layer; A second electrode disposed on the second conductivity type semiconductor layer; A first pad disposed on the first electrode; A plurality of second pads spaced apart from each other on the second electrode; And an insulating layer disposed on the first electrode and the second electrode, wherein the second conductivity type semiconductor layer includes: a body portion extending in a first direction; And a branch portion extending in a second direction perpendicular to the first direction from the body portion, wherein the insulating layer includes a first hole disposed on the branch portion, and the second pad It is electrically connected to the second electrode through one hole, and a length of the body portion in the second direction may be greater than a length of the branch portion in a first direction.

The first direction is a 1-1 direction; And a 1-2 direction opposite to the 1-1 direction, wherein the branch portion is a first sub-branch extending in the 1-1 direction or a second sub-branch extending in the 1-2 direction. It may further include;

The branch portions may be plural, and the first sub-branches may be arranged side by side in a second direction in the plurality of branch portions.

The branch portions may be plural, and the second sub-branches may be arranged side by side in a second direction in the plurality of branch portions.

The first sub-branches and the second sub-branches may be intersected in the second direction.

The first hole is a 1-1 hole disposed on the first sub-branch; And a 1-2 hole disposed on the second sub-branch, and the 1-1 hole may not overlap with the 1-2 hole in the second direction.

The first hole may have a length in the first direction less than a length in the second direction.

According to an embodiment, a semiconductor device may be implemented in the form of a flip chip.

In addition, a semiconductor device having excellent electrical properties such as current spreading can be manufactured.

In addition, it is possible to manufacture a semiconductor device with improved light output.

Various and beneficial advantages and effects of the present invention are not limited to the above-described contents, and may be more easily understood in the course of describing specific embodiments of the present invention.

1 is a plan view of a semiconductor device according to an embodiment,
2 is a cross-sectional view taken along AA′ in FIG. 1,
3 is a cross-sectional view taken along BB′ in FIG. 1,
4 is a cross-sectional view taken along CC' in FIG. 1,
5 is a plan view illustrating from a semiconductor device to a semiconductor structure according to an embodiment,
6 is a cross-sectional view taken along line DD′ in FIG. 5,
7 is a plan view of a semiconductor device according to another embodiment,
8 is a plan view of a semiconductor device according to another embodiment,
9 is an enlarged view of part K in FIG. 8.
10A and 10B are plan and cross-sectional views showing a semiconductor structure by etching,
11A and 11B are plan and cross-sectional views in which a first insulating layer is formed on a semiconductor structure,
12A and 12B are plan and cross-sectional views in which a first ohmic electrode is formed,
13A and 13B are plan and cross-sectional views in which a second ohmic electrode is formed,
14A and 14B are plan and cross-sectional views in which a first electrode, a second electrode, and a second insulating layer are formed,
15A and 15B are plan and cross-sectional views in which a first pad and a second pad are formed.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

However, the technical idea of the present invention is not limited to some embodiments to be described, but may be implemented in various different forms, and within the scope of the technical idea of the present invention, one or more of the constituent elements may be selectively selected between the embodiments. It can be combined with and substituted for use.

In addition, terms (including technical and scientific terms) used in the embodiments of the present invention are generally understood by those of ordinary skill in the art, unless explicitly defined and described. It can be interpreted as a meaning, and terms generally used, such as terms defined in a dictionary, may be interpreted in consideration of the meaning in the context of the related technology.

In addition, terms used in the embodiments of the present invention are for describing the embodiments and are not intended to limit the present invention.

In the present specification, the singular form may include the plural form unless specifically stated in the phrase, and when described as "at least one (or more than one) of A and (and) B and C", it is combined with A, B, and C. It may contain one or more of all possible combinations.

In addition, in describing the constituent elements of the embodiments of the present invention, terms such as first, second, A, B, (a), and (b) may be used.

These terms are only for distinguishing the component from other components, and are not limited to the nature, order, or order of the component by the term.

And, when a component is described as being'connected','coupled' or'connected' to another component, the component is not only directly connected, coupled or connected to the other component, but also the component and It may also include the case of being'connected','coupled' or'connected' due to another component between the other components.

In addition, when it is described as being formed or disposed in the "top (top) or bottom (bottom)" of each component, the top (top) or bottom (bottom) is one as well as when the two components are in direct contact with each other. It also includes a case in which the above other component is formed or disposed between the two components. In addition, when expressed as "upper (upper) or lower (lower)", the meaning of not only an upward direction but also a downward direction based on one component may be included.

1 is a plan view of a semiconductor device according to an embodiment, FIG. 2 is a cross-sectional view taken along AA′ in FIG. 1, FIG. 3 is a cross-sectional view taken along BB′ in FIG. 1, and FIG. It is a cross-sectional view.

1 to 4, a semiconductor device according to an embodiment of the present invention includes a substrate 110, a semiconductor structure 120 disposed on the substrate 110, and a first semiconductor structure 120 disposed on the semiconductor structure 120. 1 insulating layer 171, a first ohmic electrode 151 disposed on the first conductivity type semiconductor layer 121, a second ohmic electrode 161 disposed on the second conductivity type semiconductor layer 123, 1 On the first electrode 152 disposed on the ohmic electrode 151, the second electrode 162 disposed on the second ohmic electrode 161, and the first electrode 152 and the second electrode 162 A second insulating layer 172 disposed on the surface, a first pad 153 electrically connected to the first electrode 152, and a second pad 163 electrically connected to the second electrode 162. have.

First, the semiconductor structure 120 according to an embodiment of the present invention may output light in an ultraviolet wavelength band. For example, the semiconductor structure 120 may output light (UV-A) in the near-ultraviolet wavelength band, may output light in the far-ultraviolet wavelength band (UV-B), and may output light in the deep ultraviolet wavelength band (UV-A). C) can be printed. The wavelength range may be determined by the composition ratio of Al in the semiconductor structure 120.

For example, light in the near ultraviolet wavelength band (UV-A) may have a wavelength band in the range of 320 nm to 420 nm as the center wavelength, and light in the far ultraviolet wavelength band (UV-B) is centered in the wavelength band in the range of 280 nm to 320 nm. It may have a wavelength, and the deep ultraviolet wavelength band (UV-C) may have a wavelength band ranging from 100 nm to 280 nm as a center wavelength.

Specifically, the substrate 110 may be formed of a material selected from sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto. For example, the substrate 110 may be a light-transmitting substrate through which light in the ultraviolet wavelength band can be transmitted.

The buffer layer 111 may alleviate lattice mismatch between the substrate 110 and the semiconductor layers. The buffer layer 111 may be a combination of a group III and a group V element, or may include any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. In the present embodiment, the buffer layer 111 may be AlN, but is not limited thereto. The buffer layer 111 may include a dopant, but is not limited thereto.

The first conductivity-type semiconductor layer 121 may be implemented as a compound semiconductor such as Group III-V or Group II-VI, and may be doped with a first dopant. The first conductivity type semiconductor layer 121 has a composition formula of In _x1 Al _y1 Ga _{1 -x1 -y1} N (0=x1≤=1, 0<y1≤=1, 0≤=x1+y1≤=1). It may be selected from semiconductor materials such as AlGaN, AlN, InAlGaN, and the like. In addition, the first dopant may be an n-type dopant such as Si, Ge, Sn, Se, and Te. When the first dopant is an n-type dopant, the first conductivity-type semiconductor layer 121 doped with the first dopant may be an n-type semiconductor layer.

The active layer 122 may be disposed between the first conductivity type semiconductor layer 121 and the second conductivity type semiconductor layer 123. The active layer 122 is a layer where electrons (or holes) injected through the first conductivity type semiconductor layer 121 and holes (or electrons) injected through the second conductivity type semiconductor layer 123 meet. The active layer 122 transitions to a low energy level as electrons and holes recombine, and may generate light having an ultraviolet wavelength.

The active layer 122 may have any one of a single well structure, a multiple well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure, and the active layer 122 The structure of is not limited thereto.

The active layer 122 may include a plurality of well layers (not shown) and a barrier layer (not shown). The well layer and the barrier layer may have a composition formula of In _x2 Al _y2 Ga _{1 -x2- y2} N (0=x2≤=1, 0<y2≤=1, 0≤=x2+y2≤=1). The composition of aluminum in the well layer may vary depending on the emission wavelength.

The second conductivity-type semiconductor layer 123 is formed on the active layer 122 and may be implemented as a compound semiconductor such as Group III-V or Group II-VI. Dopants can be doped.

The second conductivity type semiconductor layer 123 has a composition formula of In _x5 Al _y2 Ga _{1 -x5- y2} N (0=x5≤=1, 0<y2≤=1, 0≤=x5+y2≤=1). It may be formed of a semiconductor material or a material selected from AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP.

When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, Ba, or the like, the second conductivity-type semiconductor layer 123 doped with the second dopant may be a p-type semiconductor layer.

In addition, the semiconductor structure 120 may include a second conductivity type semiconductor layer 123 and a recess penetrating through the active layer 122. The recess may be disposed up to a partial region of the first conductivity type semiconductor layer 121.

The first insulating layer 171 may be disposed between the first ohmic electrode 151 and the second ohmic electrode 161. In addition, a part of the first insulating layer 171 may be disposed in the recess. In addition, the first insulating layer 171 may include a first hole 171a in which the first ohmic electrode 151 is disposed and a second hole 171b in which the second ohmic electrode 161 is disposed.

The first ohmic electrode 151 may be disposed on the first conductivity type semiconductor layer 121, and the second ohmic electrode 161 may be disposed on the second conductivity type semiconductor layer 123.

The first ohmic electrode 151 and the second ohmic electrode 161 are ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium). zinc oxide), IGTO(indium gallium tin oxide), AZO(aluminum zinc oxide), ATO(antimony tin oxide), GZO(gallium zinc oxide), IZON(IZO Nitride), AGZO(Al-Ga ZnO), IGZO(In -Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, or Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, It may be formed by including at least one of In, Ru, Mg, Zn, Pt, Au, and Hf, but is not limited to these materials. For example, the first ohmic electrode 151 may have a plurality of metal layers (eg, Cr/Al/Ni), and the second ohmic electrode 161 may be ITO.

The first electrode 152 may be disposed on the first ohmic electrode 151 to cover the first ohmic electrode 151. That is, the first electrode 152 may cover the side surface of the first ohmic electrode 151, but is not limited to this configuration.

In addition, the first electrode 152 may be electrically connected to the first ohmic electrode 151 through the first hole 171a to form an electrical channel with the first conductivity type semiconductor layer 121. In addition, the first electrode 152 may extend above the first insulating layer 171. Accordingly, the first electrode 152 may be positioned on a portion of the first insulating layer 171. Due to this configuration, since the total area of the first electrode 152 is increased, the operating voltage of the semiconductor device according to the embodiment may be decreased.

The second electrode 162 may be disposed on the second ohmic electrode 161 to cover the second ohmic electrode 161. Further, the second electrode 162 may cover a side surface of the second ohmic electrode 161, but is not limited thereto.

In addition, the second electrode 162 may be electrically connected to the second electrode 162 through the second hole 171b. Accordingly, the second electrode 162 may form an electrical channel with the second ohmic electrode 161 and the second conductivity type semiconductor layer 123 electrically. In addition, for example, the second electrode 162 may be disposed only on the second ohmic electrode 161.

The first electrode 152 and the second electrode 162 are Ni/Al/Au, or Ni/IrOx/Au, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg , Zn, Pt, Au, and may be formed to include at least one of Hf, but is not particularly limited. However, the outermost layer of the first electrode 152 and the second electrode 162 exposed to the outside may include gold (Au). Gold (Au) prevents corrosion of the electrode and improves electrical conductivity to facilitate electrical connection with the pad.

The second insulating layer 172 may be disposed on the first electrode 152, the second electrode 162, and the first insulating layer 171. The second insulating layer 172 may include a third hole 172a exposing the first electrode 152 and a fourth hole 172b exposing the second electrode 162. The third hole 172a and the fourth hole 172b may be spaced apart from each other.

The first insulating layer 171 and the second insulating layer 172 are formed by selecting at least one from the group consisting of SiO ₂ , SixOy, Si ₃ N ₄ , SixNy, SiOxNy, Al ₂ O ₃ , TiO ₂ , AlN, etc. Can be. In addition, the first insulating layer 171 and the second insulating layer 172 are partially formed at the boundary between the first insulating layer 171 and the second insulating layer 172 in the process of forming the second insulating layer 172. May be removed and exist integrally.

In addition, the first pad 153 may be disposed on the first electrode 152 to be electrically connected to the first electrode 152. In addition, the second pad 163 may be disposed on the second electrode 162 to be electrically connected to the second electrode 162. In this case, the first pad 153 and the second pad 163 may be eutectic bonding, but the present invention is not limited thereto.

In addition, the first pad 153 and the second pad 163 may be disposed to face each other on the semiconductor structure 120. In an embodiment, the first pad 153 may be spaced apart from the second pad 163 in a second direction (Y-axis direction) on a plane. In this specification, the first direction (X-axis direction) is a direction perpendicular to the second direction (Y-axis direction), and the third direction (Z-axis direction) is perpendicular to both the first and second directions, and the semiconductor structure 120 ) May be the same as the stacking direction of the first conductivity type semiconductor layer 121, the active layer 122, and the second conductivity type semiconductor layer 123.

In addition, the first pad 153 is electrically connected to the first electrode 152 through the third hole 172a of the second insulating layer 172, and the second pad 163 is a second insulating layer 172. ) May be electrically connected to the second electrode 162 through the fourth hole 162a. The third hole 172a may be one hole formed according to the shape of the first electrode 152, and there may be a plurality of fourth holes 162a, and the number of such holes may be variously changed.

In addition, the first pad 153 may be disposed on one side above the third hole 172a, and the second pad 163 may be disposed on the other side above the fourth hole 172b. In addition, the first pad 153 and the second pad 163 may be separated from each other on the semiconductor structure 120 to be electrically separated.

5 is a plan view illustrating a semiconductor device from a semiconductor structure according to an exemplary embodiment, and FIG. 6 is a cross-sectional view taken along line DD′ in FIG. 5.

5 and 6, the semiconductor structure 120 may include a light-emitting portion M1 protruding by etching and a non-light-emitting portion M2 to which the first conductivity type semiconductor layer 121 is exposed by etching. have. The light emitting part M1 may include an active layer 122 and a second conductivity type semiconductor layer 123. In addition, the non-emission part M2 may include a first conductivity type semiconductor layer 121.

In this case, a ratio (P11/P12) of the maximum perimeter P11 of the light-emitting part M1 and the maximum area P12 of the light-emitting part may be 0.05 [1/um] or more and 0.10 [1/um] or less. Here, the maximum perimeter and maximum area of the light emitting part M1 may be the maximum perimeter and area of the second conductivity type semiconductor layer (or active layer). Hereinafter, the light emitting portion M1 will be described with reference to the second conductivity type semiconductor layer, and the non-light emitting portion M2 will be described with reference to the first conductivity type semiconductor layer 121.

When the ratio (P11/P12) is 0.05 or more, the circumference of the second conductivity type semiconductor layer is lengthened relative to the area, so that light output may be improved. For example, the probability that light can be emitted from the side is increased, so that light output may be improved. In addition, when the ratio P11/P12 is 0.10 or less, the circumference of the second conductivity-type semiconductor layer is too long relative to the area, thereby preventing a problem in that the light output is decreased.

In other words, when the circumference of the second conductivity-type semiconductor layer is excessively long within the same area, a very thin (length in the first direction) second conductivity-type semiconductor layer 123 may be continuously disposed. The second ohmic electrode disposed on the 2-conductivity semiconductor layer 123 is also very thin, so that resistance may increase. Accordingly, the operating voltage may increase. In addition, when the circumference of the second conductivity-type semiconductor layer 123 is very small within the same area, the area of the outer surface may decrease, thereby reducing the light output.

Accordingly, the second conductivity-type semiconductor layer 123 extends in the first direction (X-axis direction) to have an appropriate circumference and area ratio. It may include a first branch portion 123b extending in the direction (Y-axis direction). In addition, a plurality of first branch portions 123b may be spaced apart from each other in the first direction (X-axis direction). In addition, the plurality of first branch portions 123b may be connected to the first body portion 123a at one end. However, as described above, it may also be interpreted that the light emitting portion M1 has a first body portion and a first branch portion.

More specifically, the first body portion 123a may be disposed adjacent to one side of the first conductivity type semiconductor layer 123. In addition, the first body portion 123a may be extended and disposed in the first direction (X-axis direction). In this case, the direction in which the first body part 123a is extended will be described as the direction in which the length in the first direction and the length in the second direction is larger. That is, in the embodiment, since the length La in the first direction (X-axis direction) is greater than the length L1 in the second direction (Y-axis direction), the first body part 123a ) May extend in the first direction. The description of this may be equally applied to the branch portions below.

In addition, the first body portion 123a has a first outer surface 123a-1 and a second outer surface 123a-2 arranged parallel to the first direction (X-axis direction), and the second direction (Y-axis direction). Direction) and may include a third outer surface 123a-3 and a fourth outer surface 123a-4 disposed in parallel. At this time, as described above, the first outer surface 123a-1 and the second outer surface 123a-2 have a length L1 in the first direction (X-axis direction) of the third outer surface 123a-3 And a length La of the fourth outer surface 123a-4 in the second direction (Y-axis direction). And the first outer surface (123a-1) and the second outer surface (123a-2) are positioned to face each other, the third outer surface (123a-3) and the fourth outer surface (123a-4) are positioned to face each other. can do. In addition, the length in the third direction (Z-axis direction) which is the stacking direction of the semiconductor structure will be described.

The first branch portion 123b may be disposed to extend in a second direction (Y-axis direction) on the second outer surface 123a-2 of the first body portion 123a. In other words, as described above, the length Lb of the first branch portion 123b in the second direction (Y-axis direction) may be greater than the length L2 in the first direction (X-axis direction). In addition, each of the first branch portions 123b may be disposed to be spaced apart in the first direction (X-axis direction) on one outer surface (eg, the second outer surface 123a-2) of the first body portion 123a. have. In addition, the first branch portion 123b may be formed integrally with the first body portion 123a, and a boundary surface may not exist at a portion in contact with the first body portion 123a.

In addition, the first branch portion 123b is positioned to face the fifth outer surface 123b-1 and the fifth outer surface 123b-1 in contact with the first body portion 123a and is positioned in a first direction (X-axis direction) It may include a sixth outer surface (123b-2) parallel to. In addition, the first branch portion 123b includes the seventh outer surface 123b-3 and the eighth outer surface 123b-4 disposed between the fifth outer surface 123b-1 and the sixth outer surface 123b-2. ) Can be included.

The fifth outer surface 123b-1 may be disposed parallel to the first direction (X-axis direction) because it contacts a part of the second outer surface 123a-2, and the seventh outer surface 123-3 The and eighth outer surfaces 123b-4 may face each other, and some may be disposed parallel to the second direction (Y-axis direction).

In addition, as described below, in another embodiment of the present invention, the seventh outer surface 123b-3 and the eighth outer surface 123b-4 further include sub-branches extending in the first direction (X-axis direction). I can. However, in various embodiments of the present specification, the length Lb of the seventh outer surface 123b-3 and the eighth outer surface 123b-4 in the second direction (Y-axis direction) is the fifth outer surface 123b- 1) and may be maintained larger than the length L2 in the first direction (X-axis direction) of the sixth outer surface 123b-2. In this case, the second direction (Y-axis) of the first body part 123a In the direction), the length L1 may be larger than the length L2 in the first direction (X-axis direction) of the first branch portion 123b. Accordingly, even if the plurality of first branch portions 123b and the first body portion 123a become thinner due to an increase in the circumference of the second conductivity type semiconductor layer 123, the first body portion 123a is It is possible to easily support the plurality of first branch portions 123b connected to 123a). Accordingly, reliability of the semiconductor structure according to the embodiment may be improved.

In addition, the length L2 in the first direction (X-axis direction) of the first branch part 123b is 1 in the second direction (Y-axis direction) of the first body part 123a. :1.1 to 1:2.6.

When the length ratio is 1:1.1 or more, the first body portion easily supports the first branch, and the second ohmic electrode and the second electrode on the first body portion of the second conductivity type semiconductor layer also serve as a support, improving reliability. Can be. In addition, when the length ratio is 1:2.6 or less, the circumference of the second conductivity-type semiconductor layer may be improved to improve light output.

In addition, the exposed first conductivity-type semiconductor layer 121 may have a shape surrounding the second conductivity-type semiconductor layer 123 on a plane XY as described above.

Specifically, the exposed first conductivity-type semiconductor layer 121 includes a second body portion 121a extending in a first direction (X-axis direction) and a second branch portion extending in a second direction (Y-axis direction). 121b) may be included. A plurality of second body portions 121a may be positioned on both sides in the second direction (Y-axis direction). That is, the second body portion 121a may be positioned to surround the first body portion 123a and the first branch portion 123b on a plane XY.

In addition, the second branch portion 121b may be positioned between the first branch portions 123b. Alternatively, each of the plurality of first branch portions 123b may be positioned between the plurality of second branch portions 121b. With this configuration, the current injected through the first electrode disposed on the exposed first conductivity type semiconductor layer 121 may be uniformly distributed.

The length L3 of the second body portion 121a in the second direction (Y-axis direction) may be smaller than the length L1 in the second direction (Y-axis direction) of the first body portion 123a. The length ratio (L3:L1) of the length in the second direction of the second body portion 121a and the length in the second direction of the first body portion 123a may be 1:3 to 1:5. When the length ratio is 1:3 or more, the area of the second electrode is increased to improve hole injection efficiency, and when the width ratio is 1:5 or less, the area of the second body portion 121a is secured, thereby improving the electron injection efficiency. have.

In addition, the second branch portion 121b is disposed between adjacent first branch portions 123b, and the length L4 in the first direction of the second branch portion 121b is the first branch portion 123b. It may be smaller than the length L2 in one direction. A length ratio of the length L4 in the first direction of the second branch portion 121b and the length L2 in the first direction of the first branch portion 123b may be 1:2 to 1:4. When the length ratio is greater than or equal to 1:2, the area of the second electrode may increase, thereby improving hole injection efficiency. In addition, when the length ratio is less than 1:4, the area of the first electrode can be secured, and thus electron injection efficiency can be improved.

In addition, an area of the second conductivity type semiconductor layer 123 may be larger than an area of the exposed first conductivity type semiconductor layer 121. The area R1 of the second conductivity type semiconductor layer 123 may have an area ratio of 1:0.5 to 1:0.8 to the area R2 of the exposed first conductivity type semiconductor layer. When the area ratio is 1:0.5 or more, the area of the first electrode may be secured to improve electron injection efficiency, and may be disposed to surround the second electrode of the first electrode. Accordingly, the current dispersion efficiency can also be improved. In addition, when the area ratio is 1:0.8 or less, the area of the second electrode is secured, thereby improving hole injection efficiency and improving light output.

In addition, the first body portion 123a may be positioned to overlap the second pad 163 in a third direction (Z-axis direction). That is, the first body part 123a may be located under the second pad 163.

In addition, a partial region of the first branch portion 123b may be positioned under each of the first pad 153 and the second pad 163. In other words, the end 123b-1 of the first branch part 123b may be located under the first pad. Unlike this, the end 121b-1 of the second branch portion 121b may be positioned under the second pad 163.

In addition, the first pad 153 includes a first side 153b and a second side 153a parallel to the first direction, and the second pad 163 is parallel to the first direction and a second side 153a A third side surface 163a close to and a fourth side surface 163b parallel to the third side surface 163a may be included.

At this time, the distance L5 in the second direction from the end 121b-1 of the second branch portion 121b to the fourth side surface 163b of the second pad 163 is the end of the first branch portion 123b ( 123b-1) to the first side surface 153b of the first pad 153 may be longer than the distance L6 in the second direction. Accordingly, the overlapping area of the first branch portion 123b and the first pad 153 may be larger than the overlapping area of the second branch portion 121b and the second pad 163.

Accordingly, the overlapping area of the first branch portion 123b and the first pad 153 is made larger than the overlapping area of the second branch portion 121b and the second pad 163, and thus the second pad ( The second insulating layer 172 positioned between the 163 and the second branch 121b is weakened to moisture between the second pad 163 and the second branch 121b, thereby preventing a problem of deteriorating reliability. have.

In addition, the exposed first conductivity type semiconductor layer 121 may be disposed to surround the second conductivity type semiconductor layer 123 on a plane (XY plane). In addition, a first electrode may be disposed on the exposed first conductivity type semiconductor layer 121. The first electrode may have a shape corresponding to the shape of the exposed first conductivity type semiconductor layer 121. In addition, since the first electrode corresponds to the shape of the exposed first conductivity type semiconductor layer 121 and the second electrode corresponds to the shape of the second conductivity type semiconductor layer 123, the first electrode is It may be arranged to surround the electrode.

In addition, according to the embodiment, the fourth hole 172b may be positioned to overlap the first body portion 123a and the first branch portion 123b in a third direction (Z-axis direction).

More specifically, in the embodiment, the fourth hole 172b is a body hole 172b-1 disposed on the first body part 123a and a branch hole 172b-2 disposed on the first branch part 123b. ) Can be included. In this case, the body hole 172b-1 may overlap the first body portion 123a in a third direction, and the branch hole 172b-2 may overlap the first branch portion 123b in a third direction. .

Accordingly, by arranging the fourth hole 172b on both the first body portion 123a and the first branch portion 123b, the circumference of the second conductivity type semiconductor layer 123 is brought into the above-described range. Reliability and light output can be improved by winding.

In addition, the main body hole 172b-1 and the branch hole 172b-2 are entirely located on one side of the semiconductor structure 120 along the first body part 123a and the first branch part 123b. The current spreading can be smoothly performed to the first body portion 123a and the first branch portion 123b through the second electrode 162.

In addition, when the second conductivity-type semiconductor layer 123 is made of, for example, AlGaN (but is not limited to this material), the second ohmic electrode 161 contacts the second conductivity-type semiconductor layer 123 If so, a large amount of heat may be generated due to high resistance. At this time, peeling of the second ohmic electrode 161 may occur due to the generated heat, but according to the embodiment, the first branch part 123b has a length in the second direction (Y-axis direction) of the first body part 123a. By bringing the above-described heat evenly distributed in the first direction (X-axis direction) of, it is possible to prevent delamination and improve reliability. Furthermore, the fourth hole 172b is formed in the upper part of the semiconductor structure 120. It may be disposed more adjacent to the first body portion (123a). In other words, the fourth hole 172b may be concentrated on one side of the second conductive type semiconductor layer 123 where the first branch portion 123b and the first body portion 123a are in contact. In addition, the above-described heat may be generated in an area in which a plurality of fourth holes 172b are disposed, so that the electrode may be peeled off, but as in the embodiment, the second direction (Y-axis direction) of the first body part 123a Since the length is larger than the length in the first direction (X-axis direction) of the first branch portion 123b, the heat distribution can be more evenly provided, thereby more effectively suppressing the peeling phenomenon.

In addition, the length of the first branch portion 123b in the first direction (X-axis direction) may increase as the distance increases from the first body portion 123a. In other words, the length of the first branch portion 123b may gradually increase in the first direction (X-axis direction) toward the second direction (Y-axis direction). With this configuration, the width of the second branch portion 121b may decrease in the first direction (X-axis direction) as the distance from the second body portion 121a increases. With this configuration, hole injection into the second conductivity-type semiconductor layer 123 can be smoothly performed not only on one side of the first branch portion 123b in contact with the first body portion 123a, but also on the other side of the opposite side.

In addition, the plurality of branch holes 172b-2 may be located on the first branch portion 123b. In particular, the plurality of branch holes 172b-2 may be positioned to overlap one first branch portion 123b in the second direction. With this configuration, the current injected into the first branch portion 123b through the branch hole 172b-2 is uniformly spread, so that the light output of the semiconductor device may be improved.

Also, the plurality of branch holes 172b-2 may be disposed to overlap in the first direction on the plurality of first branch portions 123b and the first body portion 123a. That is, the plurality of branch holes 172b-2 may be disposed side by side on the plurality of first branch portions 123b and the first body portion 123a. Thus, in the semiconductor device according to the embodiment, the first injected current through the branch hole 172b-2 is uniformly spread to the branch portion 123b and the first body portion 123a, thereby improving the light output of the semiconductor device. Can be.

In addition, at least one of the plurality of body holes 172b-1 may overlap the branch hole 172b-2 on the first branch portion 123b in the second direction. Accordingly, in the semiconductor device according to the embodiment, the body hole 172b-1 is disposed in the first body part 123a corresponding to the branch hole 172b-2 positioned on each of the first branch parts 123b. Current spreading can be further improved.

Also, the area of the first pad 153 may be larger than the area of the second pad 163. In an embodiment, the length of the first pad 153 in the first direction (X-axis direction) may be greater than the maximum length in the first direction (X-axis direction) of the plurality of second branch portions 121b. Accordingly, each of the second branch portions 121b may partially overlap the first pad 153 in the third direction. In addition, with this configuration, electron injection from the first pad 153 to the second branch portion 121b can be easily performed.

In addition, the length of the second pad 163 in the first direction (X-axis direction) may be greater than the length in the first direction (X-axis direction) of the plurality of first branch portions 123b. In addition, the length of the second pad 163 in the first direction (X-axis direction) may be greater than the length in the first direction (X-axis direction) of the first body part 123a. That is, each of the second branch portions 123b may partially overlap the second pad 163 in the third direction (Z-axis direction). As a result, holes can be easily injected from the second pad 163 to the first branch portion 123b.

In addition, the length of the second pad 163 in the first direction (X-axis direction) may be smaller than the maximum length in the first direction (X-axis direction) of the plurality of second branch portions 121b. That is, the second branch portions 121b positioned at the outermost side in the first direction (X-axis direction) may not overlap with the second pad 163 in the third direction (Z-axis direction). Accordingly, the overlapping area between the second pad 163 and the second branch portion 121b is reduced in the third direction (Z-axis direction), thereby reducing reliability according to the opposite polarity between the second pad 163 and the second branch portion 121b. It can prevent degradation.

In addition, as a modified example, the second pad 163 may have a shape corresponding to the shape of the second conductivity type semiconductor layer 123. For example, the second pad 163 is a body pad (not shown) positioned on the first body portion 123a of the second conductivity type semiconductor layer 123 and a branch positioned on the first branch portion 123b. It may include a pad (not shown). Accordingly, the second pad 163 may not overlap with the second branch portion 121b, the first ohmic electrode, and the first electrode in the third direction. Accordingly, the second branch portion 121b, the first ohmic electrode, and the first electrode can easily prevent a decrease in reliability due to the second pad 163.

7 is a plan view of a semiconductor device according to another exemplary embodiment.

Referring to FIG. 7, in the semiconductor device according to another embodiment, the shape of the fourth hole 172b may be different from the semiconductor device according to the above-described embodiment.

Specifically, the width Wa of the fourth hole 172b in the first direction (X-axis direction) may be smaller than the width Wb in the second direction (Y-axis direction). Accordingly, the fourth hole 172b may have a shape extending more in the second direction (Y-axis direction) than in the first direction (X-axis direction).

With this configuration, current injected from the semiconductor device to the second conductivity type semiconductor layer through the fourth hole 172b can be efficiently spread in the second direction (Y-axis direction). In addition, a plurality of first branch portions 123b are arranged in parallel in the first direction (X-axis direction), and each first branch portion 123b has a fourth hole 172b, so that the first direction (X-axis direction) ), current spreading can be made smoothly. In addition, in the semiconductor device according to the embodiment, current spreading can be efficiently performed in all regions.

In addition, a semiconductor device according to another embodiment may have a larger number of first branch portions 123b in the same area compared to the semiconductor device according to the above-described embodiment.

In other words, since the width of the fourth hole 127b increases in the second direction compared to the first direction, the length of the first branch portion 123b may decrease in the first direction (X-axis direction) corresponding thereto. Accordingly, in the semiconductor device according to another exemplary embodiment, the circumference of the second conductivity-type semiconductor layer is increased to improve light output. In addition, even if the second electrode becomes thinner as the circumference increases, current spreading can be improved to maintain smooth current spreading.

In addition, as described above, according to the embodiment, the fourth hole 172b may be positioned to overlap the first body portion 123a and the first branch portion 123b in a third direction (Z-axis direction). .

In addition, the fourth hole 172b may include a body hole 172b-1 disposed on the first body portion 123a and a branch hole 172b-2 disposed on the first branch portion 123b. have.

In addition, the plurality of branch holes 172b-2 may be located on the first branch portion 123b. In particular, the plurality of branch holes 172b-2 may be disposed to overlap one first branch portion 123b in the second direction. With this configuration, the current injected into the first branch portion 123b through the branch hole 172b-2 is uniformly spread in the semiconductor structure, so that the light output of the semiconductor device may be improved.

Also, the plurality of branch holes 172b-2 may be disposed to overlap in the first direction on the plurality of first branch portions 123b and the first body portion 123a. That is, the plurality of branch holes 172b-2 may be disposed side by side on the plurality of first branch portions 123b and the first body portion 123a. Accordingly, in the semiconductor device according to the embodiment, the current injected into the first branch portion 123b and the first body portion 123a through the branch hole 172b-2 is uniformly spread, thereby improving the light output of the semiconductor device. Can be.

In addition, at least one of the plurality of body holes 172b-1 may overlap the branch hole 172b-2 on the first branch portion 123b in the second direction. Accordingly, in the semiconductor device according to the embodiment, the body hole 172b-1 is disposed in the first body part 123a corresponding to the branch hole 172b-2 positioned on each of the first branch parts 123b. Current spreading can be further improved.

In addition, the semiconductor device according to another embodiment has a configuration other than the shape of the fourth hole 172b and the first branch portion 123b (a substrate, a semiconductor structure disposed on the substrate, and a first insulation disposed on the semiconductor structure). Layer, the first ohmic electrode disposed on the first conductivity type semiconductor layer, the second ohmic electrode disposed on the second conductivity type semiconductor layer, the first electrode disposed on the first ohmic electrode, and the second ohmic electrode A second electrode disposed, and a second insulating layer disposed on the first electrode and the second electrode, a first pad electrically connected to the first electrode, and a second pad electrically connected to the second electrode) can do. In addition, configurations other than the shape of the fourth hole 172b and the first branch portion 123b described above may be the same as described above.

8 is a plan view of a semiconductor device according to another embodiment, and FIG. 9 is an enlarged view of a portion K in FIG. 8.

Referring to FIGS. 8 and 9, in a semiconductor device according to another exemplary embodiment, the first branch portion may further include a plurality of sub-branches.

Specifically, in the semiconductor device according to another embodiment, the second conductivity-type semiconductor layer 123 may include a first body portion 123a and a first branch portion 123b as described above. In addition, the first body portion 123a may extend in the first direction, and the first branch portion 123b may extend in the second direction.

As described above, the first body portion 123a may be disposed adjacent to one side of the first conductivity type semiconductor layer 123. In addition, the first body portion 123a may be extended and disposed in the first direction (X-axis direction). That is, in the embodiment, the length of the first body portion 123a in the first direction (X-axis direction) may be greater than the length in the second direction (Y-axis direction).

In addition, the first branch portion 123b may be disposed to extend in a second direction (Y-axis direction) on the second outer surface of the first body portion 123a. In other words, the length of the first branch portion 123b in the second direction (Y-axis direction) may be greater than the length in the first direction (X-axis direction). In addition, each of the first branch portions 123b may be disposed to be spaced apart in a first direction (X-axis direction) on one outer surface (eg, a second outer surface) of the first body portion 123a.

Specifically, the first branch portion 123b includes a fifth outer surface in contact with the first body portion 123a, a sixth outer surface positioned to face the fifth outer surface and parallel to the first direction (X-axis direction). can do. In addition, the first branch portion 123b may include a seventh outer surface and an eighth outer surface disposed between the fifth outer surface and the sixth outer surface. The above description may be applied in the same manner. In addition, the fifth outer surface may be disposed parallel to the first direction (X-axis direction) in contact with a part of the second outer surface, and the seventh outer surface and the eighth outer surface face each other, and a part thereof is in the second direction. It can be arranged parallel to (Y-axis direction).

In this case, the first branch portion 123b is a first sub-branch 123bb extending in the 1-1 direction (X1-axis direction) to the first body branch 123ba extending in the second direction and the 1-2 A second sub-branch 123bc extending in the direction (X2-axis direction) may be further included. Here, the first direction (X1 axis direction) includes the 1-1 direction (X1 axis direction) and the 1-2 direction (X2 axis direction), and the 1-1 direction (X1 axis direction) is the 1- It is opposite to the 2nd direction (X2 axis direction). And the second direction (Y-axis direction) includes a 2-1 direction (Y1 axis direction) and a 2-2 direction (Y2 axis direction), and the 2-1 direction (Y1 axis direction) is 2-2 It is opposite to the direction (Y2-axis direction).

In addition, even if the first branch portion 123b further includes the first body branch 123ba, the first sub branch 123bb, and the second sub branch 123bc, the first direction of the first branch portion 123b ( The length in the X-axis direction) may be smaller than the length in the second direction (Y-axis direction).

In addition, one end of the first sub branch 123bb may be connected to the first body branch 123ba. In addition, there may be a plurality of first sub-branches 123bb. That is, one first body branch 123a may be connected to a plurality of first sub branches 123bb. In addition, the plurality of first sub-branches 123bb may be spaced apart from each other in the second direction to overlap in the second direction.

In addition, the first sub-branch 123bb may be connected to each of the plurality of first body branches 123ba. The plurality of first sub-branches 123bb may be arranged side by side in the second direction in the plurality of first branch portions 123b. That is, the plurality of first sub-branches 123bb may be disposed to overlap in the second direction in the plurality of first branch portions 123b.

In addition, a fourth hole 172b may be disposed on the first sub-branch 123bb. Accordingly, the plurality of fourth holes 172b may be arranged side by side in the second direction from one first branch portion 123b. That is, the plurality of fourth holes 172b may be disposed to overlap in the second direction from one first branch portion 123b.

On the other hand, the plurality of fourth holes 172b may be arranged side by side in the first direction in the plurality of first branch portions 123b (first sub-branches). That is, the plurality of fourth holes 172b may be disposed to overlap in the first direction in the plurality of first branch portions 123b. With this configuration, the circumference of the second conductivity-type semiconductor layer is increased, so that light output can be increased, and smooth current spreading can be provided through the fourth hole 172b.

Likewise, one end of the second sub branch 123bc may be connected to the first body branch 123ba. Also, there may be a plurality of second sub-branches 123bc. That is, one first body branch 123a may be connected to a plurality of second sub branches 123bc. In addition, the plurality of second sub-branches 123bc may be spaced apart from each other in the second direction to overlap in the second direction.

In addition, the second sub-branch 123bc may be connected to each of the plurality of first body branches 123ba. The plurality of second sub-branches 123bc may be arranged side by side in the second direction in the plurality of first branch portions 123b. That is, the plurality of second sub-branches 123bc may be disposed to overlap in the second direction in the plurality of first branch portions 123b.

In addition, a fourth hole 172b may be disposed on the second sub-branch 123bc. Accordingly, the plurality of fourth holes 172b may be arranged side by side in the second direction from one first branch portion 123b. That is, the plurality of fourth holes 172b may be disposed to overlap in the second direction from one first branch portion 123b.

On the other hand, the plurality of fourth holes 172b may be arranged side by side in the first direction in the plurality of first branch portions 123b (first sub-branches). That is, the plurality of fourth holes 172b may be disposed to overlap in the first direction in the plurality of first branch portions 123b. With this configuration, the circumference of the second conductivity-type semiconductor layer is increased, so that light output can be increased, and smooth current spreading can be provided through the fourth hole 172b.

In this case, the fourth hole 172b may include a 4-1 hole 172ba and a 4-2 hole 172bb disposed on the first sub-branch 123bb. In this case, the 4-1th hole 172ba and the 4-2th hole 172bb are spaced apart, and may not be disposed to overlap in the first direction and the second direction.

With this configuration, it is possible to increase the area of the first ohmic electrode or the first electrode while increasing the circumference of the second conductivity type semiconductor layer. Accordingly, it is possible to improve the electrical characteristics by lowering the operating voltage while increasing the light output.

In addition, the second sub-branch 123bc and the first sub-branch 123bb may be connected to the same first body branch 123ba. In this case, the first sub-branches 123bb and the second sub-branches 123bc may be spaced apart from each other in the second direction. For example, the first sub-branch 123bb and the second sub-branch 123bc may be intersected in the second direction.

In other words, in the semiconductor device according to another embodiment, the first branch part 123b may include at least one of the first sub-branch 123bb and the second sub-branch 123bc. For example, the first branch portion 123b may include only the first sub-branch 123bb, or may include only the second sub-branch 123bc.

Also, the 4-1th hole 172ba may have a first center Ca, and the first center Ca may overlap in a second direction in one first branch part 123b. Here, the first center Ca of the 4-1 hole 172ba may be the center of the circle when the 4-1 hole 172ba is the cause, and the 4-1 hole 172ba has a shape other than a circle. If it has, it can be the center of gravity.

Also, the 4-2th hole 172bb may have a second center Cb, and the second center Cb of one first branch portion 123b may overlap in the second direction. Here, the second center Ca of the 4-1 hole 172ba may be the center of the circle when the 4-1 hole 172ba is the cause, and the 4-1 hole 172ba has a shape other than a circle. If it has, it can be the center of gravity.

In addition, the first center Ca and the second center Cb may not overlap in the second direction from one first branch part 123b.

However, in the plurality of first branch portions 123b, the first centers Ca may overlap each other in the first direction. For example, a first virtual line V1 connecting a plurality of first centers Ca spaced apart in a first direction to each other may be parallel to the first direction.

In addition, the second center Cb of the plurality of first branch portions 123b may overlap each other in the first direction. For example, the second virtual line V2 connecting the plurality of second centers Cb spaced apart in the first direction may be parallel to the first direction.

In addition, the first virtual line V1 and the second virtual line V2 are parallel to each other and may be spaced apart from each other in the second direction. With this configuration, hole injection may be uniformly performed through the 4-1th hole 172ba and the 4-2th hole 172bb.

In addition, the semiconductor device according to another embodiment has a configuration other than the above-described fourth hole 172b and the first branch 123b (a substrate, a semiconductor structure disposed on the substrate, and a first insulation disposed on the semiconductor structure). Layer, the first ohmic electrode disposed on the first conductivity type semiconductor layer, the second ohmic electrode disposed on the second conductivity type semiconductor layer, the first electrode disposed on the first ohmic electrode, and the second ohmic electrode A second electrode disposed, and a second insulating layer disposed on the first electrode and the second electrode, a first pad electrically connected to the first electrode, and a second pad electrically connected to the second electrode) can do. In addition, configurations other than the shape of the fourth hole 172b and the first branch portion 123b described above may be the same as described above.

10A and 10B are plan and cross-sectional views showing a semiconductor structure by etching.

10A and 10B, a semiconductor structure including a buffer layer 111, a first conductivity type semiconductor layer 121, an active layer 122, and a second conductivity type semiconductor layer 123 on a substrate 110 120 can be placed.

According to the embodiment, as described above, the semiconductor structure 120 includes a non-light emitting portion M2 exposed to the first conductivity type semiconductor layer 121 and a light emitting portion M1 protruding from the non-emitting portion M2 by etching. Can include. The light emitting part M1 may include an active layer 122 and a second conductivity type semiconductor layer 123.

The second conductivity-type semiconductor layer 123 of the light-emitting unit M1 extends in a first direction (X-axis direction) and a second direction (Y-axis direction) to have an appropriate circumference and area ratio. It may include a plurality of extended first branches.

11A and 11B are plan and cross-sectional views in which a first insulating layer is formed on a semiconductor structure.

11A and 11B, a first insulating layer 171 may be formed on the semiconductor structure 120 and a first hole 171a and a second hole 171b may be formed. The first insulating layer 171 may be formed by selecting at least one from the group consisting of SiO ₂ , SixOy, Si ₃ N ₄ , SixNy, SiOxNy, Al ₂ O ₃ , TiO ₂ , AlN, and the like.

12A and 12B are plan and cross-sectional views in which a first ohmic electrode is formed, and FIGS. 13A and 13B are plan and cross-sectional views in which a second ohmic electrode is formed.

12A and 12B, a first ohmic electrode 151 may be formed on the exposed first conductivity type semiconductor layer 121. The thickness of the first ohmic electrode 151 may be thicker than that of the first insulating layer 171. Thereafter, as shown in FIGS. 13A and 13B, a second ohmic electrode 161 may be formed on the second conductivity type semiconductor layer 123.

As a method of forming the first ohmic electrode 151 and the second ohmic electrode 161, a method of forming a general ohmic electrode may be applied as it is. The first ohmic electrode 151 is ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium). tin oxide), AZO(aluminum zinc oxide), ATO(antimony tin oxide), GZO(gallium zinc oxide), IZON(IZO Nitride), AGZO(Al-Ga ZnO), IGZO(In-Ga ZnO), ZnO, IrOx , RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, or Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, It may be formed by including at least one of Pt, Au, and Hf, but is not limited to these materials. For example, the first ohmic electrode 151 may include a plurality of metal layers (eg, Cr/Al/Ni), and the second ohmic electrode 161 may include ITO, but is not limited thereto.

14A and 14B are plan and cross-sectional views in which a first electrode, a second electrode, and a second insulating layer are formed.

14A and 14B, a first electrode 152 may be disposed on the first ohmic electrode 151. The first electrode 152 may be disposed on the first ohmic electrode 151.

The second electrode 162 may be disposed on the second ohmic electrode 161. The first electrode 152 may cover a side surface of the second ohmic electrode 161.

The first electrode 152 and the second electrode 162 are Ni/Al/Au, or Ni/IrOx/Au, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg , Zn, Pt, Au, and may be formed to include at least one of Hf, but is not particularly limited. However, the outermost layer of the first electrode 152 and the second electrode 162 exposed to the outside may include Au.

In addition, the second insulating layer 172 may be disposed on the first electrode 152, the second electrode 162 and the first insulating layer 171. The second insulating layer 172 may include a third hole 172a exposing the first electrode 152 and a fourth hole 162a exposing the second electrode 162.

15A and 15B are plan and cross-sectional views in which a first pad and a second pad are formed.

15A and 15B, the first pad 153 may be electrically connected to the first electrode 152 through the third hole 172a. Further, the second pad 163 may be electrically connected to the second electrode 162 through the fourth hole 162a.

The semiconductor device can be applied to various types of light source devices. For example, the light source device may be a concept including a sterilization device, a curing device, a lighting device, and a display device and a vehicle lamp. That is, the semiconductor device can be applied to various electronic devices that are disposed in a case to provide light.

The sterilization device may sterilize a desired area by including the semiconductor device according to the embodiment. The sterilization device may be applied to household appliances such as water purifiers, air conditioners, and refrigerators, but is not limited thereto. That is, the sterilization device can be applied to all products (eg, medical devices) that require sterilization.

Exemplarily, the water purifier may include a sterilization device according to an embodiment to sterilize circulating water. The sterilization device is disposed in a nozzle or outlet through which water circulates to irradiate ultraviolet rays. In this case, the sterilization device may include a waterproof structure.

The curing apparatus may cure various types of liquids by including the semiconductor device according to the embodiment. The liquid may be the broadest concept including all of the various materials that are cured when irradiated with ultraviolet rays. Exemplarily, the curing device can cure various types of resins. Alternatively, the curing device may be applied to cure cosmetic products such as manicure.

The lighting device may include a light source module including a substrate and the semiconductor device of the embodiment, a heat dissipation unit for dissipating heat from the light source module, and a power supply unit for processing or converting an electrical signal received from the outside to provide the light source module. In addition, the lighting device may include a lamp, a head lamp, or a street light.

The display device may include a bottom cover, a reflector, a light emitting module, a light guide plate, an optical sheet, a display panel, an image signal output circuit, and a color filter. The bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may constitute a backlight unit.

The reflector is disposed on the bottom cover, and the light emitting module may emit light. The light guide plate is disposed in front of the reflective plate to guide light emitted from the light emitting module to the front, and the optical sheet may include a prism sheet and the like, and may be disposed in front of the light guide plate. A display panel may be disposed in front of the optical sheet, an image signal output circuit supplies an image signal to the display panel, and a color filter may be disposed in front of the display panel.

When the semiconductor device is used as a backlight unit of a display device, it may be used as an edge type backlight unit or a direct type backlight unit.

In addition to the above-described light emitting diode, the semiconductor device may be a laser diode.

Like the light emitting device, the laser diode may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer having the above-described structure. In addition, the p-type first conductivity type semiconductor and the n-type second conductivity type semiconductor are bonded to each other and use the electro-luminescence phenomenon in which light is emitted when current is passed, but the direction of the emitted light There are differences in and phase. In other words, in the laser diode, light having a specific wavelength (monochrome light, monochromatic beam) can be emitted in the same direction with the same phase by using a phenomenon of stimulated emission and constructive interference. Therefore, it can be used for optical communication, medical equipment, and semiconductor processing equipment.

As an example of the light-receiving element, a photodetector, which is a kind of transducer that detects light and converts its intensity into an electric signal, is exemplified. As such photodetectors, photovoltaic cells (silicon, selenium), photoelectric devices (cadmium sulfide, cadmium selenide), photodiodes (for example, PDs with peak wavelengths in the visible blind spectral region or true blind spectral region), photoelectric devices Transistors, photomultiplier tubes, photoelectric tubes (vacuum, gas encapsulated), IR (Infra-Red) detectors, etc. are provided, but embodiments are not limited thereto.

In addition, semiconductor devices such as photodetectors may be generally manufactured using a direct bandgap semiconductor having excellent light conversion efficiency. Alternatively, photodetectors have various structures, and the most common structures include a pin-type photodetector using a pn junction, a Schottky photodetector using a Schottky junction, and a metal semiconductor metal (MSM) photodetector. have.

The photodiode may include a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer having the above-described structure, as in the light emitting device, and has a pn junction or a pin structure. The photodiode operates by applying a reverse bias or a zero bias, and when light is incident on the photodiode, electrons and holes are generated and a current flows. At this time, the magnitude of the current may be substantially proportional to the intensity of light incident on the photodiode.

A photovoltaic cell or a solar cell is a type of photodiode and can convert light into electric current. The solar cell may include a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer having the above-described structure, similarly to the light emitting device.

In addition, it may be used as a rectifier of an electronic circuit through the rectification characteristic of a general diode using a p-n junction, and may be applied to an ultra-high frequency circuit and applied to an oscillation circuit.

In addition, the above-described semiconductor device is not necessarily implemented as a semiconductor, and may further include a metallic material in some cases. For example, a semiconductor device such as a light receiving device may be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, or As, and may be implemented by a p-type or n-type dopant. It may be implemented using a doped semiconductor material or an intrinsic semiconductor material.

Claims (7)

Board;
A first conductivity type semiconductor layer, a second conductivity type semiconductor layer disposed on the substrate, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, the second conductivity type A semiconductor structure including a semiconductor layer and a recess penetrating the active layer;
A first electrode disposed on the first conductivity type semiconductor layer;
A second electrode disposed on the second conductivity type semiconductor layer;
A first pad disposed on the first electrode;
A plurality of second pads spaced apart from each other on the second electrode; And
Including; an insulating layer disposed on the first electrode and the second electrode,
The second conductivity type semiconductor layer,
A body portion extending in a first direction; And
Including; a branch portion extending in a second direction perpendicular to the first direction from the body portion,
The insulating layer includes a first hole disposed on the branch,
The second pad is electrically connected to the second electrode through the first hole,
A semiconductor device having a length of the body portion in the second direction greater than a length of the branch portion in the first direction. The method of claim 1,
The first direction is a 1-1 direction; And a 1-2 direction opposite to the 1--1 direction,
The semiconductor device further comprises a first sub-branch extending in the 1-1 direction or a second sub-branch extending in the 1-2 direction. The method of claim 2,
The branch portion is plural,
The first sub-branches are arranged side by side in a second direction in a plurality of branch portions. The method of claim 2,
The branch portion is plural,
The second sub-branches are arranged side by side in a second direction in a plurality of branch portions. The method of claim 2,
The first sub-branch and the second sub-branch are intersected in the second direction. The method of claim 5,
The first hole is a 1-1 hole disposed on the first sub-branch; And a 1-2 hole disposed on the second sub-branch,
The first-first hole does not overlap with the first-second hole in the second direction. The method of claim 1,
The first hole is a semiconductor device whose length in the first direction is smaller than the length in the second direction.

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