KR20200143851A - Semiconductor device package - Google Patents

Abstract

According to an embodiment of the present invention, provided is a semiconductor device package including: a substrate; a plurality of semiconductor devices disposed on the substrate; a wall portion disposed between the plurality of semiconductor devices; and a wavelength conversion layer disposed on the plurality of semiconductor devices and the wall portion, wherein an upper surface of the wall portion is disposed between the upper surface of the wavelength conversion layer and the upper surface of the semiconductor device, thereby improving contrast by placing the wall portion between the semiconductor devices.

Description

Semiconductor device package {SEMICONDUCTOR DEVICE PACKAGE}

The embodiment relates to a semiconductor device package.

Semiconductor devices including compounds such as GaN and AlGaN have many advantages, such as having a wide and easily adjustable band gap energy, and thus can be used in various ways as light emitting devices, light receiving devices, and various diodes.

In particular, light emitting devices such as light emitting diodes and laser diodes using group 3-5 or group 2-6 compound semiconductor materials are developed in red, green, and There is an advantage of being able to implement light in various wavelength bands such as blue and ultraviolet rays. In addition, a light emitting device such as a light emitting diode or a laser diode using a group 3-5 or group 2-6 compound semiconductor material can implement a white light source having good efficiency by using a fluorescent material or by combining colors. These light-emitting devices have advantages of low power consumption, semi-permanent life, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when a light-receiving device such as a photodetector or a solar cell is also manufactured using a Group 3-5 or Group 2-6 compound semiconductor material, the development of the device material absorbs light in various wavelength ranges to generate photocurrent. By doing so, light in various wavelength ranges from gamma rays to radio wavelength ranges can be used. In addition, such a light-receiving device has advantages of fast response speed, safety, environmental friendliness, and easy control of device materials, and thus can be easily used for power control or ultra-high frequency circuits or communication modules.

Therefore, the semiconductor device can replace the transmission module of the optical communication means, the light emitting diode backlight that replaces the Cold Cathode Fluorescence Lamp (CFL) that constitutes the backlight of the LCD (Liquid Crystal Display) display device, and a fluorescent lamp or incandescent light bulb. Applications are expanding to white light-emitting diode lighting devices, automobile headlights, traffic lights, and sensors that detect gas or fire. In addition, the application of the semiconductor device can be extended to high-frequency application circuits, other power control devices, and communication modules.

The light emitting device (Light Emitting Device) can be provided as a pn junction diode having a characteristic in which electrical energy is converted into light energy by using a group 3-5 element or a group 2-6 element on the periodic table. Various wavelengths can be implemented by adjusting the composition ratio.

For example, nitride semiconductors are attracting great interest in the development of optical devices and high-power electronic devices due to their high thermal stability and wide band gap energy. In particular, a blue light emitting device, a green light emitting device, an ultraviolet (UV) light emitting device, and a red light emitting device using a nitride semiconductor have been commercialized and widely used.

For example, in the case of an ultraviolet light emitting device, it is a light emitting diode that generates light distributed in a wavelength range of 200 nm to 400 nm, and is used for sterilization and purification in the above wavelength band, in the case of short wavelength, and in the case of a long wavelength, exposure machine or curing machine. Can be used.

Ultraviolet rays can be divided into three types: UV-A (315nm~400nm), UV-B (280nm~315nm), and UV-C (200nm~280nm) in the order of their longest wavelength. The UV-A (315nm~400nm) range is applied in various fields such as industrial UV curing, printing ink curing, exposure machine, counterfeit detection, photocatalytic sterilization, special lighting (aquarium/agricultural use, etc.), and UV-B (280nm~315nm). ) Area is used for medical purposes, and UV-C (200nm~280nm) area is applied to air purification, water purification, and sterilization products.

Meanwhile, as semiconductor devices capable of providing high output are requested, studies on semiconductor devices capable of increasing output by applying high power are being conducted.

In addition, in a semiconductor device package, research on a method of improving light extraction efficiency of a semiconductor device and improving light intensity at a package end is being conducted. In addition, in a semiconductor device package, research on a method for improving the bonding bonding force between the package electrode and the semiconductor device is being conducted.

However, when a plurality of semiconductor devices are disposed, it is difficult to form a fine reflective structure in the arrangement of the semiconductor devices, and there is a problem that the contrast is lowered.

The embodiment provides a semiconductor device package in which the contrast is improved by disposing walls between semiconductor devices.

In addition, a semiconductor device package with improved surface roughness is provided.

In addition, a semiconductor device package with improved reliability is provided.

In addition, a semiconductor device having excellent ohmic contact is provided.

The problems to be solved in the examples are not limited thereto, and the objectives and effects that can be grasped from the solutions or embodiments of the problems described below are also included.

A semiconductor device package according to an embodiment includes a substrate; A plurality of semiconductor devices disposed on the substrate; A wall portion disposed between the plurality of semiconductor devices; And a wavelength conversion layer disposed on the plurality of semiconductor devices and the wall portion, wherein an upper surface of the wall portion is disposed between an upper surface of the wavelength conversion layer and an upper surface of the semiconductor device.

The wall portion may include a first area overlapping the semiconductor device in a first direction and a second area positioned above the first area.

The first region may extend below the semiconductor device.

The second region may penetrate to a partial region of the wavelength conversion layer.

The width of the second region may decrease in the first direction toward a second direction perpendicular to the first direction.

An area of the wavelength conversion layer may increase in the second direction.

A height difference between the upper surface of the wall portion and the upper surface of the wavelength conversion layer may be different.

The height difference may increase toward the outside of the substrate.

The height between the upper surface of the semiconductor device and the upper surface of the wall portion may be a height and a ratio between the upper surface of the wavelength conversion layer and the upper surface of the semiconductor device of 1:5 to 1:20.

The surface roughness of the first region may be 0.1 to 5 times the surface roughness of the second region.

The plurality of semiconductor devices may include a first conductivity type semiconductor layer; A second conductivity type semiconductor layer; And a light emitting structure including an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer.

According to the embodiment, a semiconductor device package with improved contrast may be implemented.

In addition, a semiconductor device package with improved surface roughness can be manufactured.

In addition, it is possible to manufacture a semiconductor device package with improved reliability.

Various and beneficial advantages and effects of the present invention are not limited to the above-described contents, and may be more easily understood in the course of describing specific embodiments of the present invention.

1 is a top view of a semiconductor device package according to a first embodiment,
2 is a cross-sectional view taken along AA′ in FIG. 1,
3 and 4 are views for explaining the effect of the semiconductor device package according to the first embodiment,
5 is a conceptual diagram of a semiconductor device,
6 is a cross-sectional view of a semiconductor device package according to a second embodiment,
7 is a top view of a semiconductor device package according to a third embodiment,
8 is a cross-sectional view taken along BB′ in FIG. 7,
9A to 9D are flowcharts illustrating a method of manufacturing a semiconductor device package according to the first embodiment.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

However, the technical idea of the present invention is not limited to some embodiments to be described, but may be implemented in various different forms, and within the scope of the technical idea of the present invention, one or more of the constituent elements may be selectively selected between the embodiments. It can be combined with and substituted for use.

In addition, terms (including technical and scientific terms) used in the embodiments of the present invention are generally understood by those of ordinary skill in the art, unless explicitly defined and described. It can be interpreted as a meaning, and terms generally used, such as terms defined in a dictionary, may be interpreted in consideration of the meaning in the context of the related technology.

In addition, terms used in the embodiments of the present invention are for describing the embodiments and are not intended to limit the present invention.

In the present specification, the singular form may include the plural form unless specifically stated in the phrase, and when described as "at least one (or more than one) of A and (and) B and C", it is combined with A, B, and C. It may contain one or more of all possible combinations.

In addition, in describing the constituent elements of the embodiments of the present invention, terms such as first, second, A, B, (a), and (b) may be used.

These terms are only for distinguishing the component from other components, and are not limited to the nature, order, or order of the component by the term.

And, when a component is described as being'connected','coupled' or'connected' to another component, the component is not only directly connected, coupled or connected to the other component, but also the component and It may also include the case of being'connected','coupled' or'connected' due to another component between the other components.

In addition, when it is described as being formed or disposed in the "top (top) or bottom (bottom)" of each component, the top (top) or bottom (bottom) is one as well as when the two components are in direct contact with each other. It also includes a case in which the above other component is formed or disposed between the two components. In addition, when expressed as "upper (upper) or lower (lower)", the meaning of not only an upward direction but also a downward direction based on one component may be included.

1 is a top view of a semiconductor device package according to a first embodiment, and FIG. 2 is a cross-sectional view taken along AA′ in FIG. 1.

1 and 2, the semiconductor device package 10a according to the first embodiment includes a substrate 100, a plurality of semiconductor devices 200 disposed on the substrate 100, and a plurality of semiconductor devices 200. A wall portion 300 disposed therebetween, a semiconductor device 200 and a wavelength conversion layer 400 disposed on the wall portion 300 may be included.

Specifically, the substrate 100 may include a conductive material or an insulating material. The substrate 100 may include a metal material such as aluminum (Al) or copper (Cu), or may include an insulating material such as ceramic. The ceramic material may include low temperature co-fired ceramic (LTCC) or high temperature co-fired ceramic (HTCC). As an example, the substrate 100 may include a ceramic material such as AlN. However, the present invention is not limited thereto, and the substrate 100 may include other ceramic materials such as SiO2, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, and the like.

The substrate 100 may include a first bonding unit 110 and a second bonding unit 120 disposed thereon. In addition, the semiconductor device 200 may be disposed on the first bonding unit 110 and the second bonding unit 120. That is, the substrate 100 may be electrically and physically connected to the semiconductor device 200 through the first bonding unit 110 and the second bonding unit 120.

In addition, the first bonding unit 110 and the second bonding unit 120 may be separated from each other on the substrate 100 to be electrically separated. Further, the substrate 100 may include a pattern of a predetermined electric circuit thereon, and electrical connection between the pattern of the circuit and the above-described first bonding unit 110 and second bonding unit 120 may be made.

The semiconductor device 200 may be disposed on the substrate 100. In addition, there may be a plurality of semiconductor devices 200 and may be spaced apart from each other on the substrate 100. For example, the plurality of semiconductor devices 200 may be arranged in a matrix form. In an embodiment, the semiconductor devices 200 may be disposed along a first direction (X-axis direction), and may be spaced apart from adjacent semiconductor devices in a first direction (X-axis direction). The first direction (X-axis direction) is one direction in which the plurality of semiconductor devices 200 are spaced apart, and the second direction (Y-axis direction) is a direction perpendicular to the first direction (X-axis direction), and the semiconductor device 200 ) May be a stacking direction of the semiconductor structure or a direction from the substrate 100 toward the semiconductor device 200.

In addition, the semiconductor device 200 is disposed on the first bonding unit 110 and the second bonding unit 120, and may be electrically connected to the first bonding unit 110 and the second bonding unit 120. In this case, the semiconductor device 200 may include a first electrode pad and a second electrode pad in contact with the first bonding unit 110 and the second bonding unit 120, respectively. Similarly, a description of this will be described later.

In addition, the semiconductor device 200 includes a light-emitting structure, and when current is injected, the light-emitting structure may emit light having a predetermined wavelength band as a center wavelength. A detailed description of this will be described later.

In an embodiment, the semiconductor device 200 may be injected with current through the first bonding unit 110 and the second bonding unit 120, and as described above, the first bonding unit 110 and the second bonding unit Since 120 is connected to correspond to the circuit pattern of the substrate 100, generation of light may be controlled in the plurality of semiconductor devices according to control of current injection through the circuit pattern. For example, the closest semiconductor devices among the plurality of semiconductor devices 200 may be controlled to alternately turn on/off each other, but is not limited thereto.

The wall part 300 may be disposed between the plurality of semiconductor devices 200. Also, the wall part 300 may be disposed along the edge of the semiconductor device so as to surround the plurality of semiconductor devices 200. In other words, the wall part 300 may include a plurality of cavities, and a plurality of semiconductor devices 200 may be disposed in the plurality of cavities, respectively.

The wall part 300 may be made of a material having heat resistance, light resistance, crack resistance, low transmittance, insulation, and thermal stress (eg, low linear expansion coefficient). For example, the wall part 300 may be made of a resin material such as silicone, fluorine, or epoxy resin.

Specifically, the wall part 300 includes the semiconductor device 200 and a first region 310 overlapping in the first direction (X-axis direction) and a second region 320 disposed above the first region 310 In other words, the first region 320 may be a region in which the wall portion 300 does not overlap with the semiconductor element 200 in the first direction (X-axis direction). In addition, the wall portion 300 is a semiconductor element. It means that it can be further extended to the top of 200.

In addition, the first region 310 may be disposed parallel to the second region 320 in the second direction (Y-axis direction), and may be disposed to partially contact the semiconductor device 200.

In addition, the first region 310 may partially contact the substrate 100 and may be disposed to surround a side surface of the semiconductor device 200. That is, the height of the first region 310 in the second direction (Y-axis direction) may be greater than the height in the second direction (axial direction) of the semiconductor device 200. With this configuration, the first region 310 of the wall part 300 primarily prevents the light emitted to the side of the semiconductor device 200 from traveling to the adjacent semiconductor device 200 and allows the light to move upward. do.

Also, the first region 310 may be disposed to extend below the semiconductor device 200. In an embodiment, the first region 310 may extend below the semiconductor device 200 and may be disposed to surround the first bonding unit 110 and the second bonding unit 120. With this configuration, the wall part 300 protects the first bonding part 110 and the second bonding part 120, which are electrical contacts between the semiconductor device 200 and the substrate 100, from external force and foreign substances, and thus the semiconductor device ( 200) and the bonding force between the substrate 100 may be improved. Furthermore, reliability between the semiconductor device 9200 and the substrate 100 may be improved.

The second region 320 may be located above the first region 310. In addition, as described above, the second region 320 may be disposed so as not to overlap with the semiconductor device 200 in the first direction (X-axis direction). Accordingly, the upper surface 300a of the wall portion 300 may correspond to the upper surface of the second region 320 and may be spaced apart from the semiconductor device 200 and positioned on the upper surface. Accordingly, the second region 320 may block light emitted from the semiconductor device 200 from moving to the top of the adjacent semiconductor device in a direct or indirect (eg, reflection) manner.

In other words, the second region 320 may be disposed above the semiconductor device 200 to surround the semiconductor device 200 in a plane, and extend from the first region 310 in the second direction (Y-axis direction). Can be deployed. With this configuration, it is possible to prevent the light emitted from the semiconductor device 200 from being emitted to the top of the adjacent semiconductor device. Accordingly, the contrast between the light emitted from the semiconductor device into which the current is injected and the light emitted from the semiconductor device to which the current is not injected can be greatly improved. In other words, the light guide between the semiconductor devices is blocked, so that the luminance of the non-emission semiconductor device may decrease and the luminance of the light emitting semiconductor device may increase.

The wavelength conversion layer 400 may be disposed on the plurality of semiconductor devices 200 and the wall portion 300. The wavelength conversion layer 400 may be made of an organic or inorganic material. For example, the wavelength conversion layer 400 may be formed of a glass material. Accordingly, even if a high current is applied from a high-power package such as a vehicle lamp and high light energy is irradiated for a long time, a problem of cracking or color change can be prevented. That is, as an example, the wavelength conversion layer 400 may be manufactured by sintering an inorganic material such as glass powder to provide improved reliability compared to an organic material for high light energy.

In addition, when the wavelength conversion layer 400 is made of a light-transmitting glass material, it may provide improved light transmittance compared to epoxy and silicon. In addition, the wavelength conversion layer 400 may uniformly distribute the phosphor to provide improved wavelength distribution efficiency and color coordinate distribution.

The wavelength conversion layer 400 may include at least one of a phosphor or a quantum dot. Here, the phosphor or quantum dot may absorb light emitted from the semiconductor device 200, excite it at a predetermined wavelength, and then emit it again. The wavelength conversion layer 400 may emit blue, yellow, green, or red light, for example.

In addition, the phosphor may include at least one or two of a green phosphor, a red phosphor, a yellow phosphor, and a blue phosphor. In addition, the phosphor may include at least one of YAG-based, TAG-based, Silicate-based, Sulfide-based, or Nitride-based. In addition, the wavelength conversion layer 400 may emit output light obtained by mixing some light from the semiconductor device 200 and some light converted by a phosphor. For example, the output light may be white light. However, the present invention is not limited thereto, and the output light may be green, blue, or red light.

According to the embodiment, the wall part 300 may penetrate to a partial region of the wavelength conversion layer 400. In other words, the second region 320 may be disposed to overlap the wavelength conversion layer 400 and the first region (X-axis direction). Accordingly, it is possible to prevent the light emitted from the semiconductor device 200 from being reflected or refracted in the wavelength conversion layer 400 and moving to the top of the adjacent semiconductor device. Accordingly, it is possible to improve the contrast according to emission/non-emission of each semiconductor device. In addition, since the bonding force between the wall portion 300 and the wavelength conversion layer 400 is improved, reliability of the semiconductor device package 10a may be improved.

Further more specifically, the wavelength conversion layer 400 may include an upper surface 410 and a lower surface 420. In addition, the lower surface 420 may include a first lower surface 420a, a side surface 420b, and a second lower surface 420c. In this case, the first lower surface 420a may contact the upper surface 300a of the wall portion 300. In addition, the side surface 420b may be disposed to be in contact with the first lower surface 420a and extend downward. In addition, the side surface 420b may overlap the second region 320 in the first direction (X-axis direction).

Alternatively, the second lower surface 420c may be the lowermost surface of the wavelength conversion layer 400. That is, the second lower surface 420c may contact the upper surface 200a of the semiconductor device 200. In this case, the second lower surface 420c may be located below the first lower surface 420a and the upper surface 300a of the wall portion 300. In this case, the upper surface 200a of the semiconductor device 200 may be changed according to the shape of the semiconductor device, for example, a vertical type, a horizontal type, or a flip type. For example, when the semiconductor device is of a flip type, the top surface 200a of the semiconductor device 200 may be one surface of a light-transmitting substrate such as sapphire, but is not limited thereto as described above.

That is, in an exemplary embodiment, the upper surface 300a of the wall part 300 may have the upper surface 410 of the wavelength conversion layer 400 disposed between the upper surface 200a of the semiconductor device 200. In other words, the upper surface 300a of the wall part 300 may be positioned between the upper surface 410 of the wavelength conversion layer 400 and the second lower surface 420c that is the lowest surface of the wavelength conversion layer 400. With this configuration, the wall portion 300 can easily prevent light emitted from the plurality of semiconductor devices 200 from interfering with each other or being guided. As a result, the semiconductor device package 10a may provide an improved contrast.

In addition, according to the embodiment, the height ha between the upper surface 200a of the semiconductor device 200 and the upper surface 300a of the wall portion 300 is the upper surface 200a of the semiconductor device 200 is the wavelength conversion layer 400 The height hb and the height ratio between the upper surfaces 410 of may be 1:5 to 1:20.

When the above-described height ratio is greater than 1:5, it is possible to easily prevent light emitted through a semiconductor device from being guided to an upper region of an adjacent semiconductor device.

In addition, when the above-described height ratio is less than 1:20, transmittance of light emitted through the wavelength conversion layer 400 may be improved.

3 and 4 are views for explaining the effect of the semiconductor device package according to the first embodiment.

3 shows a blue luminance distribution (a) and a white luminance distribution (b) in a semiconductor device package when there is no wall part, and FIG. 4 is a blue luminance distribution (a) in the semiconductor device package when a wall part exists as described above. ) And white luminance distribution (b).

Referring to FIGS. 3A and 3B, it can be seen that the light in the light-emitting area A is guided to the non-emissive area B, so that the uniformity and contrast of light in the light-emitting area A are reduced.

The light-emitting region is an upper region of the semiconductor device that emits light by current injection, and the non-emission region is an upper region of the semiconductor device that does not emit light due to non-injection of current.

On the contrary, referring to FIGS. 4A and 4B, it can be seen that the luminance of light in the light emitting area A'is kept high as a whole, so that light is prevented from being guided to the non-emissive area B'. In addition, it can be seen that the contrast between the light-emitting region A'and the non-light-emitting region B'is also highly improved.

5 is a conceptual diagram of a semiconductor device.

Referring to FIG. 5, a semiconductor device according to an embodiment of the present invention includes a light emitting structure 220, a first insulating layer 271 disposed on the light emitting structure 220, and a first conductive type semiconductor layer 221. A first ohmic electrode 251 disposed on, a second ohmic electrode 261 disposed on the second conductivity type semiconductor layer 223, and a first cover electrode 252 disposed on the first ohmic electrode 251 , A second cover electrode 262 disposed on the second ohmic electrode 261, and a second insulating layer 272 disposed on the first cover electrode 252 and the second cover electrode 262. I can.

When the light emitting structure 220 emits light in the ultraviolet wavelength band, each semiconductor layer of the light emitting structure 220 includes In _x1 Al _y1 Ga _{1 -x1- y1} N (0=x1≤=1, 0<) y1≤=1, 0≤=x1+y1≤=1) may include a material. Here, the composition of Al can be represented by the ratio of the total atomic weight including the atomic weight of In, the atomic weight of Ga, and the atomic weight of Al and the atomic weight of Al. For example, when the Al composition is 40%, the composition of Ga may be 60% Al ₄₀ Ga ₆₀ N.

In addition, in the description of the embodiment, the meaning of the composition being low or high may be understood as a difference (and/or a percentage point) of the composition% of each semiconductor layer. For example, if the aluminum composition of the first semiconductor layer is 30% and the aluminum composition of the second semiconductor layer is 60%, the aluminum composition of the second semiconductor layer can be expressed as 30% higher than the aluminum composition of the first semiconductor layer. have.

The transparent substrate 210 may be formed of a material selected from among sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto. The light-transmitting substrate 210 may be a light-transmitting member through which light in the ultraviolet wavelength band can be transmitted.

The buffer layer 211 may alleviate lattice mismatch between the transparent substrate 210 and the semiconductor layers. The buffer layer 211 may be in a form in which a group III and a group V element are combined, or may include any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. In this embodiment, the buffer layer 211 may be AlN, but is not limited thereto. The buffer layer 211 may include a dopant, but is not limited thereto.

The first conductivity type semiconductor layer 221 may be implemented as a compound semiconductor such as Group III?-V or Group II?-VI, and may be doped with a first dopant. The first conductivity type semiconductor layer 221 has a composition formula of In _x1 Al _y1 Ga _1-x1-y1 N (0=x1≤=1, 0<y1≤=1, 0≤=x1+y1≤=1). It may be selected from semiconductor materials such as AlGaN, AlN, InAlGaN, and the like. In addition, the first dopant may be an n-type dopant such as Si, Ge, Sn, Se, and Te. When the first dopant is an n-type dopant, the first conductivity-type semiconductor layer 221 doped with the first dopant may be an n-type semiconductor layer.

The active layer 222 may be disposed between the first conductivity type semiconductor layer 221 and the second conductivity type semiconductor layer 223. The active layer 222 is a layer in which electrons (or holes) injected through the first conductivity type semiconductor layer 221 and holes (or electrons) injected through the second conductivity type semiconductor layer 223 meet. The active layer 222 transitions to a low energy level as electrons and holes recombine, and may generate light having an ultraviolet wavelength.

The active layer 222 may have any one of a single well structure, a multiple well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure or a quantum wire structure, and the active layer 222 The structure of is not limited thereto.

The active layer 222 may include a plurality of well layers (not shown) and a barrier layer (not shown). The well layer and the barrier layer may have a composition formula of In _x2 Al _y2 Ga _{1 -x2- y2} N (0=x2≤=1, 0<y2≤=1, 0≤=x2+y2≤=1). The composition of aluminum in the well layer may vary depending on the emission wavelength.

The second conductivity type semiconductor layer 223 is formed on the active layer 222 and may be implemented as a compound semiconductor such as Group III?-V, Group II?-VI, etc., and is formed on the second conductive semiconductor layer 223. The second dopant may be doped.

The second conductivity-type semiconductor layer 223 has a composition formula of In _x5 Al _y2 Ga _{1 -x5- y2} N (0=x5≤=1, 0<y2≤=1, 0≤=x5+y2≤=1). It may be formed of a semiconductor material or a material selected from AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP.

When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, Ba, or the like, the second conductivity-type semiconductor layer 223 doped with the second dopant may be a p-type semiconductor layer.

The first insulating layer 271 may be disposed between the first ohmic electrode 251 and the second ohmic electrode 261. Specifically, the first insulating layer 271 may include a first hole 271a in which the first ohmic electrode 251 is disposed and a second hole 271b in which the second ohmic electrode 261 is disposed.

The first ohmic electrode 251 may be disposed on the first conductivity type semiconductor layer 221, and the second ohmic electrode 261 may be disposed on the second conductivity type semiconductor layer 223.

The first ohmic electrode 251 and the second ohmic electrode 261 are indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), and indium gallium (IGZO). zinc oxide), IGTO(indium gallium tin oxide), AZO(aluminum zinc oxide), ATO(antimony tin oxide), GZO(gallium zinc oxide), IZON(IZO Nitride), AGZO(Al-Ga ZnO), IGZO(In -Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, or Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, It may be formed by including at least one of In, Ru, Mg, Zn, Pt, Au, and Hf, but is not limited to these materials. For example, the first ohmic electrode 251 may have a plurality of metal layers (eg, Cr/Al/Ni), and the second ohmic electrode 261 may be ITO.

6 is a cross-sectional view of a semiconductor device package according to a second embodiment.

Referring to FIG. 6, the semiconductor device package according to the second embodiment includes a substrate 100, a plurality of semiconductor devices 200 disposed on the substrate 100, and a plurality of semiconductor devices as described in the first embodiment. It may include a wall portion 300 disposed between the 200 and a wavelength conversion layer 400 disposed on the semiconductor device 200 and the wall portion 300.

Also, as described above, the wall part 300 may include a first region 310 and a second region 320. However, according to the second embodiment, the width of the second region 320 may change in the first direction (X-axis direction) toward the second direction (Y-axis direction). In addition, the wavelength conversion layer 400 may increase in area toward the top.

Specifically, the minimum width Wb in the first direction (X-axis direction) in the second region 320 may be different from the minimum width Wb in the first direction (X-axis direction) in the first region 310. have. In an embodiment, the minimum width Wb in the first direction (X-axis direction) in the second area 320 may be smaller than the minimum width Wb in the first direction (X-axis direction) in the first area 310 have. Accordingly, the wavelength conversion layer 400 may gradually increase in area toward the top.

With this configuration, the wall portion 300 can improve the bonding force between the wavelength conversion layers 400 by an anchor effect. In addition, the surface roughness may be different in the second region 320 of the wall part 300 compared to the upper surface 200a of the semiconductor device 200, and further, the surface roughness increases, so that adhesion or bonding force with the wavelength conversion layer 400 Can be further improved. That is, since the first region 310 in the wall portion 300 contacts the semiconductor device 200 and the second region 320 contacts the wavelength conversion layer 400, the surface roughness of the second region 320 is reduced. 1 It may be different from the surface roughness of the region 310. Furthermore, the surface roughness of the second region 320 may be greater than that of the first region 310.

In an embodiment, the surface roughness of the second region 320 may be 0.1 to 5 times, preferably 0.5 to 3 times the surface roughness of the first region 310. In this case, when the surface roughness of the second region 320 is less than 0.1 times the surface roughness of the first region 310, the bonding force cannot be improved, and the surface roughness of the second region 320 is the first region 310 If it is greater than 5 times the surface roughness of ), reliability may decrease due to damage to the wall.

In addition, an area of the wall portion 300 penetrating to a partial region of the wavelength conversion layer 400 may be reduced, so that the transmittance of light through the wall portion 300 may be increased. Accordingly, light emitted to the top of the semiconductor device increases, and finally, the light output of the semiconductor device package may be improved.

In addition, the minimum width Wb in the first direction (X-axis direction) in the second region 320 is smaller than the minimum width Wb in the first direction (X-axis direction) in the first region 310, Even if the region 320 forms a boundary region that partitions a plurality of semiconductor devices, it may be provided thinner. That is, dark lines can be reduced.

In addition, the wall part 300 includes a first inclined surface 320a located outside the wavelength conversion layer 400, a second inclined surface 320b in contact with the wavelength conversion layer 400, and a first inclined surface in the second region 320. It may include a connection portion 320c disposed between the (320a) and the second inclined surface (320b).

The connection part 320c may have the minimum width in the first direction (X-axis direction) from the wall part 300, and may be located at the top of the wall part 300.

In addition, the first inclined surface 320a may be an inclined surface positioned at the outermost side of the second area 320 of the wall portion 300. In addition, since the wavelength conversion layer 400 is not disposed on the first inclined surface 320a, the first inclined surface 320a and the wavelength conversion layer 400 may not overlap in the second direction (Y-axis direction). With this configuration, since light absorption by the wavelength conversion layer 400 is reduced, light output by the semiconductor device package may be improved.

As described above, the second inclined surface 320b is in contact with the wavelength conversion layer 400 to improve the bonding force between the wavelength conversion layer 400 and the wall portion 300, and the width in the first direction (X-axis direction) from the wall portion 300 By gradually decreasing in the second direction (Y-axis direction), light absorption in the wall portion 300 may be reduced.

7 is a top view of a semiconductor device package according to the third embodiment, and FIG. 8 is a cross-sectional view taken along BB′ in FIG. 7.

7 and 8, in the semiconductor device package 10c according to the third embodiment, the substrate 100 (or the wall portion 300) has a first side surface 100a and a second side surface facing each other in one direction. It may include (100b) and a third side (100c) and a fourth side (100d) facing each other in different directions.

In addition, the substrate 100 (or the wall portion 300) includes a first central point C1, and the upper surface of the wall portion 300 may decrease toward the first central point C1. Here, the first central point C1 is an intersection of the first virtual line L1 and the second virtual line L2, and the first virtual line L1 is the first side 100a and the second side 100b. It is parallel and is a line bisecting the third side 100c and the fourth side 100d, and the second virtual line L2 is parallel to the third side 100c and the fourth side 100d and is parallel to the first side 100a. ) And the second side (100b).

In other words, in the semiconductor device package 10c according to the third embodiment, a height difference between the upper surface 300a of the wall portion 300 and the upper surface 410 of the wavelength conversion layer 400 may be changed. In particular, a height difference between the upper surface 300a of the wall portion 300 and the upper surface 410 of the wavelength conversion layer 400 may gradually decrease toward the first central point C1. In addition, the height difference between the upper surface 300a of the wall portion 300 and the upper surface 410 of the wavelength conversion layer 400 may increase toward the outside of the substrate 100. For example, the height difference hc between the upper surface of the wall part and the upper surface of the wavelength conversion layer from the outside may be greater than the height difference (hd) between the upper surface of the wall part and the upper surface of the wavelength conversion layer from the inside. With this configuration, light absorption by the wavelength conversion layer 400 is reduced to improve the light output of the semiconductor device package, and the bonding force between the wavelength conversion layer 400 and the wall part 300 is increased from the outside to prevent cracks, etc. Accordingly, it is possible to easily prevent the reliability of the package from deteriorating.

9A to 9D are flowcharts illustrating a method of manufacturing a semiconductor device package according to the first embodiment.

Referring to FIG. 9A, a sacrificial layer SL and a semiconductor device 200 may be formed on the temporary substrate TS. Here, the temporary substrate (TS) may be a growth substrate for setting a semiconductor layer, and is selected from a group including a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge Can be. However, it is not limited to these materials.

The sacrificial layer SL may include a material separable from the wavelength of the irradiated laser. In addition, the sacrificial layer SL may include oxide or nitride. However, it is not limited thereto. For example, the sacrificial layer SL is a material with little deformation generated during epitaxial growth and may include an oxide-based material.

In addition, a plurality of semiconductor devices 200 may be spaced apart from each other on the substrate 100. In addition, the semiconductor device 200 may be disposed to be in contact with the first bonding unit 110 and the second bonding unit 120 on the substrate 100. Accordingly, the semiconductor device 200 may be electrically connected to the substrate 100 or a circuit pattern of the substrate through the first bonding unit 110 and the second bonding unit 120.

Referring to FIG. 9B, the wall portion 300 may be formed through an underfill. The wall part 300 may be disposed to surround the semiconductor device 200. Accordingly, the wall portion 300 may be positioned between adjacent semiconductor devices 200.

In addition, the wall portion 300 may be provided at a predetermined depth or more under the semiconductor device by underfill. Accordingly, it is possible to provide stable strength to the semiconductor device 200.

In addition, the wall portion 300 may be disposed to surround the sacrificial layer SL. As a result, the wall part 300 may also be located above the semiconductor device 200.

Referring to FIG. 9C, the sacrificial layer SL may be removed by laser irradiation. Alternatively, a part of the sacrificial layer SL may be removed. Accordingly, the sacrificial layer SL may be separated from the semiconductor device 200 and the wall part 300.

Accordingly, the wall portion 300 may form a recess on the semiconductor device 200. In addition, the surface roughness of the wall part 300 may be different by the laser, and further, the surface roughness may be increased. In addition, it may be formed such that the width or area decreases toward the top.

Referring to FIG. 9D, the wavelength conversion layer 400 may be disposed on the semiconductor device 200 and the wall portion 300. Accordingly, the wavelength conversion layer 400 may be disposed in the recess of the wall portion 300. That is, as described above, a shape in which the wall portion 300 penetrates the wavelength conversion layer 400 to a partial area may be provided. Accordingly, the wall portion 300 and the recess may provide an anchor effect in coupling with the wavelength conversion layer 400 to improve bonding strength with the wavelength conversion layer 400.

In addition, the wavelength conversion layer 400 may be disposed on the semiconductor device 200 so that light emitted from the semiconductor device 200 may be wavelength-converted through the wavelength conversion layer 400 and provided thereon. Also,

In the embodiment, the structure of the flip-type light emitting device has been described, but is not limited thereto. Exemplarily, the light emitting device according to the embodiment may have a vertical or horizontal structure.

The light emitting device can be applied to various types of light source devices. For example, the light source device may be a concept including a sterilization device, a curing device, a lighting device, and a display device and a vehicle lamp. That is, the light-emitting element can be applied to various electronic devices that are disposed in a case to provide light.

The sterilization device may sterilize a desired area by providing the light emitting device according to the embodiment. The sterilization device may be applied to household appliances such as water purifiers, air conditioners, and refrigerators, but is not limited thereto. That is, the sterilization device can be applied to all products (eg, medical devices) that require sterilization.

Exemplarily, the water purifier may include a sterilization device according to an embodiment to sterilize circulating water. The sterilization device is disposed in a nozzle or outlet through which water circulates to irradiate ultraviolet rays. In this case, the sterilization device may include a waterproof structure.

The curing apparatus may cure various types of liquids by including the light emitting device according to the embodiment. The liquid may be the broadest concept including all of the various materials that are cured when irradiated with ultraviolet rays. Exemplarily, the curing device can cure various types of resins. Alternatively, the curing device may be applied to cure cosmetic products such as manicure.

The lighting device may include a light source module including a substrate and a light emitting device of the embodiment, a heat dissipation unit for dissipating heat from the light source module, and a power supply unit for processing or converting an electrical signal provided from the outside to provide the light source module. In addition, the lighting device may include a lamp, a head lamp, or a street light.

The display device may include a bottom cover, a reflector, a light emitting module, a light guide plate, an optical sheet, a display panel, an image signal output circuit, and a color filter. The bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may constitute a backlight unit.

The reflector is disposed on the bottom cover, and the light emitting module may emit light. The light guide plate is disposed in front of the reflective plate to guide light emitted from the light emitting module to the front, and the optical sheet may include a prism sheet and the like, and may be disposed in front of the light guide plate. A display panel may be disposed in front of the optical sheet, an image signal output circuit supplies an image signal to the display panel, and a color filter may be disposed in front of the display panel.

When the light emitting element is used as a backlight unit of a display device, it may be used as an edge type backlight unit or a direct type backlight unit.

The light-emitting element may be a laser diode in addition to the light-emitting diode described above.

Like the light emitting device, the laser diode may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer having the above-described structure. In addition, the p-type first conductivity type semiconductor and the n-type second conductivity type semiconductor are bonded to each other and use the electro-luminescence phenomenon in which light is emitted when current is passed, but the direction of the emitted light There are differences in and phase. In other words, in the laser diode, light having a specific wavelength (monochrome light, monochromatic beam) can be emitted in the same direction with the same phase by using a phenomenon of stimulated emission and constructive interference. Therefore, it can be used for optical communication, medical equipment, and semiconductor processing equipment.

As an example of the light-receiving element, a photodetector, which is a kind of transducer that detects light and converts its intensity into an electric signal, is exemplified. As such photodetectors, photovoltaic cells (silicon, selenide), photovoltaic devices (cadmium sulfide, cadmium selenide), photodiodes (for example, PDs with peak wavelengths in the visible blind spectral region or true blind spectral region), photoelectric devices Transistors, photomultiplier tubes, photoelectric tubes (vacuum, gas encapsulated), IR (Infra-Red) detectors, etc. are provided, but embodiments are not limited thereto.

In addition, a light-emitting device such as a photodetector may be generally manufactured using a direct bandgap semiconductor having excellent light conversion efficiency. Alternatively, photodetectors have various structures, and the most common structures include a pin-type photodetector using a pn junction, a Schottky photodetector using a Schottky junction, and a metal semiconductor metal (MSM) photodetector. have.

The photodiode may include a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer having the above-described structure, as in the light emitting device, and has a pn junction or a pin structure. The photodiode operates by applying a reverse bias or a zero bias, and when light is incident on the photodiode, electrons and holes are generated and a current flows. At this time, the magnitude of the current may be substantially proportional to the intensity of light incident on the photodiode.

A photovoltaic cell or a solar cell is a type of photodiode and can convert light into electric current. The solar cell may include a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer having the above-described structure, similarly to the light emitting device.

In addition, it may be used as a rectifier of an electronic circuit through the rectification characteristic of a general diode using a p-n junction, and may be applied to an ultra-high frequency circuit and applied to an oscillation circuit.

In addition, the above-described light emitting device is not necessarily implemented with only a semiconductor, and may further include a metallic material in some cases. For example, a light emitting device such as a light receiving device may be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, or As, and may be implemented by a p-type or n-type dopant. It may be implemented using a doped semiconductor material or an intrinsic semiconductor material.

Claims (10)

Board;
A plurality of semiconductor devices disposed on the substrate;
A wall portion disposed between the plurality of semiconductor devices; And
Including; a wavelength conversion layer disposed on the plurality of semiconductor devices and the wall portion,
The upper surface of the wall portion is disposed between the upper surface of the wavelength conversion layer and the upper surface of the semiconductor device.
The method of claim 1,
A semiconductor device package including a first region overlapping the semiconductor device in a first direction and a second region positioned above the first region.
The method of claim 2,
The first region is a semiconductor device package extending below the semiconductor device.
The method of claim 2,
The second region is a semiconductor device package that penetrates to a partial region of the wavelength conversion layer.
The method of claim 4,
The second region is a semiconductor device package whose width decreases in the first direction toward a second direction perpendicular to the first direction.
The method of claim 5,
The wavelength conversion layer is a semiconductor device package whose area increases in the second direction.
The method of claim 1,
A semiconductor device package having a different height difference between an upper surface of the wall portion and an upper surface of the wavelength conversion layer.
The method of claim 7,
The height difference increases toward the outside of the substrate.
The method of claim 1,
A semiconductor device package in which a height between an upper surface of the semiconductor device and an upper surface of the wall portion is in a ratio of 1:5 to 1:20 between the upper surface of the wavelength conversion layer and the upper surface of the semiconductor device.
The method of claim 2,
A semiconductor device package having a surface roughness of the first region of 0.1 to 5 times that of the second region.

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