KR20210006636A - Semiconductor device package - Google Patents

Abstract

Disclosed is a semiconductor device package with the improved reliability and structural stability. The semiconductor device package comprises: a substrate; a semiconductor device disposed on the substrate; a wavelength conversion layer disposed on the semiconductor device; a cover layer disposed above the semiconductor device and outside the wavelength conversion layer; and an encapsulation layer disposed outside the semiconductor device and the cover layer. The cover layer has a coefficient of thermal expansion less than a coefficient of thermal expansion of the encapsulation layer.

Description

Semiconductor device package {SEMICONDUCTOR DEVICE PACKAGE}

The embodiment relates to a semiconductor device package.

Semiconductor devices including compounds such as GaN and AlGaN have many advantages, such as having a wide and easily adjustable band gap energy, and thus can be used in various ways as light emitting devices, light receiving devices, and various diodes.

In particular, light emitting devices such as light emitting diodes and laser diodes using group 3-5 or group 2-6 compound semiconductor materials are developed in red, green, and There is an advantage of being able to implement light in various wavelength bands such as blue and ultraviolet rays. In addition, a light emitting device such as a light emitting diode or a laser diode using a group 3-5 or group 2-6 compound semiconductor material can implement a white light source having good efficiency by using a fluorescent material or by combining colors. These light-emitting devices have advantages of low power consumption, semi-permanent life, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when a light-receiving device such as a photodetector or a solar cell is also manufactured using a Group 3-5 or Group 2-6 compound semiconductor material, the development of the device material absorbs light in various wavelength ranges to generate photocurrent. By doing so, light in various wavelength ranges from gamma rays to radio wavelength ranges can be used. In addition, such a light-receiving device has advantages of fast response speed, safety, environmental friendliness, and easy control of device materials, and thus can be easily used for power control or ultra-high frequency circuits or communication modules.

Therefore, the semiconductor device can replace the transmission module of the optical communication means, the light emitting diode backlight that replaces the Cold Cathode Fluorescence Lamp (CFL) that constitutes the backlight of the LCD (Liquid Crystal Display) display device, and a fluorescent lamp or incandescent light bulb. Applications are expanding to white light-emitting diode lighting devices, automobile headlights, traffic lights, and sensors that detect gas or fire. In addition, the application of the semiconductor device can be extended to a high frequency application circuit, other power control devices, and communication modules.

The light emitting device (Light Emitting Device) can be provided as a pn junction diode having a characteristic in which electrical energy is converted into light energy by using a group 3-5 element or a group 2-6 element on the periodic table. Various wavelengths can be implemented by adjusting the composition ratio.

For example, nitride semiconductors are attracting great interest in the development of optical devices and high-power electronic devices due to their high thermal stability and wide band gap energy. In particular, a blue light emitting device, a green light emitting device, an ultraviolet (UV) light emitting device, and a red light emitting device using a nitride semiconductor have been commercialized and widely used.

For example, in the case of an ultraviolet light emitting device, it is a light emitting diode that generates light distributed in a wavelength range of 200 nm to 400 nm, and is used for sterilization and purification in the above wavelength band, in the case of a short wavelength, and in the case of a long wavelength, an exposure machine or a curing machine. Can be used.

Ultraviolet rays can be divided into three types: UV-A (315nm~400nm), UV-B (280nm~315nm), and UV-C (200nm~280nm) in the order of their longest wavelength. The UV-A (315nm~400nm) range is applied in various fields such as industrial UV curing, printing ink curing, exposure machine, counterfeit detection, photocatalytic sterilization, special lighting (aquarium/agricultural use, etc.), and UV-B (280nm~315nm). ) Area is used for medical purposes, and UV-C (200nm~280nm) area is applied to air purification, water purification, and sterilization products.

Meanwhile, as semiconductor devices capable of providing high output are requested, studies on semiconductor devices capable of increasing output by applying high power are being conducted.

In addition, in a semiconductor device package, research on a method of improving light extraction efficiency of a semiconductor device and improving light intensity at a package end is being conducted. In addition, in a semiconductor device package, research on a method for improving the bonding bonding force between the package electrode and the semiconductor device is being conducted.

However, there is a problem in that reliability is deteriorated due to deterioration between the semiconductor device and the upper wavelength conversion layer in the semiconductor device package.

The embodiment provides a semiconductor device package that prevents deterioration due to light guide by disposing a cover layer on the semiconductor device and outside the wavelength conversion layer.

In addition, a semiconductor device package with improved reliability and structural stability is provided.

The problems to be solved in the examples are not limited thereto, and the objectives and effects that can be grasped from the solutions or embodiments of the problems described below are also included.

A semiconductor device package according to an embodiment includes a substrate; A semiconductor device disposed on the substrate; A wavelength conversion layer disposed on the semiconductor device; A cover layer disposed above the semiconductor device and outside the wavelength conversion layer; And an encapsulation layer disposed outside the semiconductor device and the cover layer, wherein the cover layer has a coefficient of thermal expansion less than that of the encapsulation layer.

A light-transmitting layer disposed on the wavelength conversion layer, wherein the cover layer includes a first cover member disposed outside the wavelength conversion layer; And a second cover member extending in a first direction from the first cover member and disposed outside the light-transmitting layer, wherein the first direction may be a direction from the substrate toward the semiconductor device.

The first cover member may overlap the wavelength conversion layer in a second direction perpendicular to the first direction.

The second cover member may overlap the light transmitting layer in the second direction.

The semiconductor device may have a length in the second direction greater than a length in the second direction of the wavelength conversion layer.

The cover layer may further include a third cover member disposed between the light transmitting layer and the semiconductor device.

The third cover member may overlap the wavelength conversion layer in the second direction.

The third cover member may contact the semiconductor device and the light transmitting layer.

The cover layer may include a first cover layer disposed outside the semiconductor device; And a second cover layer disposed inside the first cover layer, and a height of the first cover layer may be smaller than a height of the second cover layer.

The cover layer may be made of an inorganic material.

According to the embodiment, a semiconductor device package that prevents deterioration due to light guide may be implemented.

In addition, a semiconductor device package having improved reliability and structural stability can be manufactured.

Various and beneficial advantages and effects of the present invention are not limited to the above-described contents, and may be more easily understood in the course of describing specific embodiments of the present invention.

1 is a cross-sectional view of a semiconductor device package according to a first embodiment,
2 is an enlarged view of part A in FIG. 1,
Figure 3a is a modified example of Figure 1,
3B is another modified example of FIG. 1, and FIG. 4 is a conceptual diagram of a semiconductor device according to the embodiment,
5 is a cross-sectional view of a semiconductor device package according to a second embodiment,
6A is an enlarged view of part B in FIG. 5,
6B is a modified example of FIG. 5,
7 is a cross-sectional view of a semiconductor device package according to a third embodiment,
8 is a cross-sectional view of a semiconductor device package according to a fourth embodiment.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

However, the technical idea of the present invention is not limited to some embodiments to be described, but may be implemented in various different forms, and within the scope of the technical idea of the present invention, one or more of the constituent elements may be selectively selected between the embodiments. It can be combined with and substituted for use.

In addition, terms (including technical and scientific terms) used in the embodiments of the present invention are generally understood by those of ordinary skill in the art, unless explicitly defined and described. It can be interpreted as a meaning, and terms generally used, such as terms defined in a dictionary, may be interpreted in consideration of the meaning in the context of the related technology.

In addition, terms used in the embodiments of the present invention are for describing the embodiments and are not intended to limit the present invention.

In the present specification, the singular form may include the plural form unless specifically stated in the phrase, and when described as "at least one (or more than one) of A and (and) B and C", it is combined with A, B, and C It may contain one or more of all possible combinations.

In addition, in describing the constituent elements of the embodiments of the present invention, terms such as first, second, A, B, (a), and (b) may be used.

These terms are only for distinguishing the component from other components, and are not limited to the nature, order, or order of the component by the term.

And, when a component is described as being'connected','coupled' or'connected' to another component, the component is not only directly connected, coupled or connected to the other component, but also the component and It may also include the case of being'connected','coupled' or'connected' due to another component between the other components.

In addition, when it is described as being formed or disposed in the "top (top) or bottom (bottom)" of each component, the top (top) or bottom (bottom) is one as well as when the two components are in direct contact with each other. It also includes the case where the above other component is formed or arranged between the two components. In addition, when expressed as "upper (upper) or lower (lower)", the meaning of not only an upward direction but also a downward direction based on one component may be included.

1 is a cross-sectional view of a semiconductor device package according to a first embodiment, and FIG. 2 is an enlarged view of portion A in FIG. 1.

Referring to FIG. 1, a semiconductor device package 10a according to the first embodiment includes a substrate 100, a semiconductor device 200 disposed on the substrate 100, and a wavelength conversion layer disposed on the semiconductor device 200. 300, the light transmitting layer 400 disposed on the wavelength conversion layer 300, the cover layer 500 disposed above the semiconductor device 200 and outside the wavelength conversion layer 300, the outside of the semiconductor device 200 It may include an encapsulation layer 600 disposed and an adhesive layer 700 disposed between the semiconductor device 200 and the wavelength conversion layer 300.

First, the substrate 100 may be disposed under the semiconductor device package 10a to support other components such as the semiconductor device 200. In addition, the substrate 100 may include a wiring disposed thereon so as to connect to the electrode of the semiconductor device 200.

In addition, the substrate 100 may include a conductive material or an insulating material. The substrate 100 may include a metal material such as aluminum (Al) or copper (Cu), or may include an insulating material such as ceramic. The ceramic material may include low temperature co-fired ceramic (LTCC) or high temperature co-fired ceramic (HTCC). As an example, the substrate 100 may include a ceramic material such as AlN. However, the present invention is not limited thereto, and the substrate 100 may include other ceramic materials such as SiO2, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, and the like. Accordingly, the substrate 100 may be a metal substrate, a metallic substrate, or a ceramic substrate having high heat dissipation. However, it is not limited thereto.

In addition, the substrate 100 may include a substrate for connecting the semiconductor device 200 with a wire, a lead electrode (eg, a wiring), or may include a cavity and have a structure in which the semiconductor device 200 is disposed in the cavity. In addition, the upper surface of the substrate 100 may be made of a highly reflective material to reflect light upward.

In an embodiment, the substrate 100 may include a first bonding unit 110 and a second bonding unit 120 disposed thereon. In addition, the semiconductor device 200 may be disposed on the first bonding unit 110 and the second bonding unit 120. That is, the substrate 100 may be electrically and physically connected to the semiconductor device 200 through the first bonding unit 110 and the second bonding unit 120.

In addition, the first bonding unit 110 and the second bonding unit 120 may be separated from each other on the substrate 100 to be electrically separated. Further, the substrate 100 includes a wiring that is a pattern of a predetermined electric circuit thereon, and the wiring may be electrically connected between the first bonding unit 110 and the second bonding unit 120. Accordingly, the first bonding unit 110 and the second bonding unit 120 may perform the same operation as the electrode.

That is, the semiconductor device 200 is disposed on the first bonding unit 110 and the second bonding unit 120 on the substrate 100, and the first bonding unit 110 and the second bonding unit 120 Can be electrically connected. In this case, the semiconductor device 200 may include a first electrode pad (or cover electrode) and a second electrode pad (or cover electrode) contacting the first bonding unit 110 and the second bonding unit 120, respectively. have. This will be described later in FIG. 4.

In addition, in the semiconductor device 200 as an embodiment, current may be injected through the first bonding unit 110 and the second bonding unit 120, and as described above, the first bonding unit 110 and the second bonding unit 120 may be connected to correspond to the circuit pattern of the substrate 100. Accordingly, the generation of light in the semiconductor device 200 may be controlled according to control of current injection through the circuit pattern on the substrate 100. In addition, the semiconductor device 200 includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, and when current is injected, the light emitting structure emits light having a predetermined wavelength band as the center wavelength. can do. A detailed description of this will be described later in FIG. 4.

In addition, in the present specification, the semiconductor device 200 may be stacked on the substrate 100 in the first direction (X-axis direction). In addition, the first direction (X-axis direction) may be the same as the direction from the semiconductor device 200 toward the wavelength conversion layer 300 or the stacking direction of the semiconductor layers in the semiconductor device 200. In addition, the second direction (Y-axis direction) is a direction perpendicular to the first direction (X-axis direction).

The wavelength conversion layer 300 may be disposed on the semiconductor device 200. The wavelength conversion layer 300 may be made of an organic or inorganic material. For example, the wavelength conversion layer 300 may be formed of a glass material. Accordingly, even if a high current is applied from a high-power package such as a vehicle lamp and high light energy is irradiated for a long time, a problem of cracking or color change can be prevented. That is, as an example, the wavelength conversion layer 300 may be manufactured by sintering an inorganic material such as glass powder to provide improved reliability compared to an organic material for high light energy.

In addition, since the wavelength conversion layer 300 contacts the semiconductor device 200 and transmits light emitted from the semiconductor device 200, high heat and high output light may be provided closer to the side surface to be vulnerable to deterioration. As described above, the mana and wavelength conversion layer 300 may itself have strong resistance to deterioration.

In addition, when the wavelength conversion layer 300 is made of a light-transmitting glass material, it may provide improved light transmittance compared to epoxy and silicon. In addition, the wavelength conversion layer 300 may uniformly distribute the phosphor to provide improved wavelength distribution efficiency and color coordinate distribution.

Specifically, the wavelength conversion layer 300 may include at least one of a phosphor or a quantum dot. Here, the phosphor or quantum dot may absorb light emitted from the semiconductor device 200, excite it at a predetermined wavelength, and then emit it again. The wavelength conversion layer 300 may emit blue, yellow, green, or red light, for example.

In addition, the phosphor may include at least one or two of a green phosphor, a red phosphor, a yellow phosphor, and a blue phosphor. In addition, the phosphor may include at least one of YAG-based, TAG-based, Silicate-based, Sulfide-based, or Nitride-based. In addition, the wavelength conversion layer 300 may emit output light obtained by mixing some light of the semiconductor device 200 and some light converted by a phosphor. For example, the output light may be white light. However, the present invention is not limited thereto, and the output light may be green, blue, or red light.

In addition, the wavelength conversion layer 300 may convert the wavelength of light emitted from the semiconductor device 200 and transmit light upwardly. In this case, the light-transmitting layer 400, which is disposed on the wavelength conversion layer 300 and described later, may not exist.

The light-transmitting layer 400 may be disposed on the wavelength conversion layer 300. Accordingly, the light transmitting layer 400 may transmit light whose wavelength is converted by the wavelength conversion layer 300.

The light-transmitting layer 400 may include a wavelength conversion material that converts the wavelength of light emitted from the semiconductor device 200, such as the wavelength conversion layer 300. However, it is not limited thereto.

In addition, the width of the light-transmitting layer 400 in the second direction (Y-axis direction) may be different from the width in the second direction (Y-axis direction) of the semiconductor device 200. For example, when the light-transmitting layer 400 and the semiconductor device 200 are circular, the diameter of the light-transmitting layer 400 may be different from the diameter of the semiconductor device 200. However, it is not limited to this shape.

In an embodiment, the light transmitting layer 400 may have a width or diameter greater than that of the semiconductor device 200. With this configuration, the light-transmitting layer 400 may improve light distribution for light emitted from the semiconductor device 200. However, when the light-transmitting layer 400 and the semiconductor device 200 are polygonal, the width of the light-transmitting layer 400 may be greater than the width of the semiconductor device 200. That is, the amount of light flux from the semiconductor device 200 may be improved by making the upper surface of the light transmitting layer 400 from which light is emitted larger than that of the semiconductor device 200.

In addition, in an embodiment, the width of the light-transmitting layer 400 in the second direction (Y-axis direction) may be smaller than the width of the semiconductor device 200 in the second direction (Y-axis direction). That is, compared to the semiconductor device 200, the area of the upper surface of the light-transmitting layer 400 from which light is finally emitted is reduced, so that the ratio of the color mixture in the light-transmitting layer 400 can be kept constant. Accordingly, the light-transmitting layer 400 may emit light having improved uniformity by reducing color irregularities and the like.

Likewise, the wavelength conversion layer 300 described above may also have a width smaller than the width of the semiconductor device 200 in the second direction (Y-axis direction). With this configuration, the ratio of the color mixture of light in the wavelength conversion layer 300 can be kept constant. That is, the emitted light may be provided to the top with improved color uniformity and the like. In addition, the light-transmitting layer 400 may improve relative luminance by reducing the area of the upper surface of the wavelength conversion layer 300.

The light transmitting layer 400 may have a refractive index different from that of the semiconductor device 200. In an embodiment, the light-transmitting layer 400 may have a refractive index less than that of the semiconductor device 200. By this configuration, it is possible to improve the extraction efficiency of light emitted to the outside from the semiconductor device package according to the embodiment.

In addition, the light-transmitting layer 400 may be made of various materials for transmitting light emitted from the semiconductor device 200. For example, the light-transmitting layer 400 may include at least one of glass, or a phosphor crystal or a single crystal, a polycrystal, an amorphous body, and a ceramic body having the same. However, it is not limited to these materials.

The cover layer 500 may be disposed on the semiconductor device 200. In addition, the cover layer 500 may be disposed outside the wavelength conversion layer 300. Here, the outer side may mean a direction from the center of each semiconductor device 200 toward the edge, and the inner side may mean a direction from the edge of the semiconductor device 200 toward the center. In addition, the center of the semiconductor device 200 may mean a center of gravity, and may be located on an axis extending in the first direction (X-axis direction).

In addition, the cover layer 500 may include a first cover member 510 and a second cover member 520. The first cover member 510 may be disposed under the cover layer 500 and may be disposed to overlap the wavelength conversion layer 300 in the second direction (Y-axis direction).

Alternatively, the second cover member 520 may be disposed above the first cover member 510 and may be disposed to overlap the light transmitting layer 400 in the second direction (Y-axis direction).

The cover layer 500 may be made of a material different from that of the encapsulation layer 600 to be described later. In an embodiment, the cover layer 500 may include an inorganic material. For example, the cover layer 500 may be made of a ceramic type. Alternatively, the encapsulation layer 600 may be made of a holding material.

In addition, the cover layer 500 may have a thermal expansion coefficient different from that of the encapsulation layer 600. Specifically, the coefficient of thermal expansion of the cover layer 500 may be smaller than that of the encapsulation layer 600. With this configuration, even if the light emitted from the semiconductor device 200 is guided to the wavelength conversion layer 300 or the light transmission layer 400, the wavelength conversion layer 300 and the encapsulation layer 600 or between the light transmission layer 400 and It is possible to prevent deterioration due to a difference in thermal expansion coefficient between the encapsulation layers 600. Furthermore, since the wavelength conversion layer 300 and the light-transmitting layer 400 are disposed on the semiconductor device 200, it is possible to prevent deterioration from occurring on the upper side of the semiconductor device package 10a early. Accordingly, since the semiconductor device package 10a blocks deterioration from spreading to the semiconductor device 200, the reliability of the package may be improved.

In addition, the ratio of the thermal expansion coefficient of the cover layer 500 to the thermal expansion coefficient of the wavelength conversion layer 300 may be 1:50 or less. When the above-described ratio is greater than 1:50, there is a limit in that separation from the semiconductor device 200 or the light-transmitting layer 400 occurs due to a repulsive force generated in the upper and lower portions of the wavelength conversion layer 300 during heating. Accordingly, even if heating occurs within the above-described rain, the reliability of the device may be improved by maintaining adhesion between the semiconductor device 200 or the light transmitting layer 400. The first cover member 510 may be disposed between the wavelength conversion layer 300 and the encapsulation layer 600 on the semiconductor device 200. In addition, the first cover member 510 may be disposed on the semiconductor device 200 without overlapping with the semiconductor device 200 in the second direction (Y-axis direction) to prevent deterioration from being provided to the semiconductor device 200. . In addition, as described above, since the side of the wavelength conversion layer 300 is on the top of the semiconductor device 200 and adjacent to the semiconductor device 200, heat and light are concentrated and are vulnerable to deterioration, but the first cover member 510 ) Is disposed outside the wavelength conversion layer 300 to prevent such deterioration.

In addition, the second cover member 520 may be disposed between the light transmitting layer 400 and the encapsulation layer 600 on the wavelength conversion layer 300 and the semiconductor device 200. Accordingly, the second cover member 520 may be disposed on the semiconductor device 200 without overlapping with the semiconductor device 200 in the second direction (Y-axis direction). Also, the second cover member 520 may be positioned at the top of the semiconductor device package 10a to prevent deterioration from spreading to the semiconductor device 200.

The encapsulation layer 600 may be disposed outside the semiconductor device 200, the wavelength conversion layer 300, the light transmitting layer 400 and the cover layer 500 on the substrate 100. That is, the encapsulation layer 600 may be disposed to surround the semiconductor device 200, the wavelength conversion layer 300, the light transmitting layer 400, and the cover layer 500. By this configuration, the encapsulation layer 600 is structurally formed on the substrate 100 in the semiconductor device 200, the wavelength conversion layer 300, the light transmitting layer 400, and the cover layer 500 in the semiconductor device package 10a. It can make you feel secure.

In addition, the encapsulation layer 600 may have different coefficients of thermal expansion than the cover layer 500 as described above, and may include an organic material.

The encapsulation layer 600 may be disposed between the semiconductor device 200 and the substrate 100. Accordingly, the encapsulation layer 600 may support the semiconductor device 200 to improve reliability.

The adhesive layer 700 may be disposed between the wavelength conversion layer 300 and the semiconductor device 200. The adhesive layer 700 may be made of a material having high thermal conductivity and high light transmittance. The adhesive layer 700 may be disposed on a part or the entire surface of the semiconductor device 200.

In addition, the above-described cover layer 500 may be disposed on the side of the adhesive layer 700. Accordingly, it is possible to prevent deterioration from reaching the semiconductor device 200 as much as possible, thereby improving the reliability of the semiconductor device package. In addition, since the above description of the adhesive layer 700 can be equally applied to other embodiments described later, a description thereof will be omitted.

3A is a modified example of FIG. 1.

Referring to FIG. 3A, a semiconductor device package 10a ′ according to a modified example includes a substrate 100, a semiconductor device 200 disposed on the substrate 100, and a wavelength conversion layer disposed on the semiconductor device 200 ( 300), a light transmitting layer 400 disposed on the wavelength conversion layer 300, a cover layer 500 disposed above the semiconductor device 200 and outside the wavelength conversion layer 300, and disposed outside the semiconductor device 200 An encapsulation layer 600 to be formed and an adhesive layer 700 disposed between the semiconductor device 200 and the wavelength conversion layer 300 may be included.

Specifically, the cover layer 500 may include a lower surface 500a, a side surface 500b, and an upper surface 500c. In this case, the width Wa of the lower surface 500a in the second direction (Y-axis direction) may be different from the width Wb in the second direction (Y-axis direction) of the upper surface 500c. In an embodiment, the width Wa of the lower surface 500a in the second direction (Y-axis direction) may be smaller than the width Wb in the second direction (Y-axis direction) of the upper surface 500c.

In addition, in the semiconductor device package, a difference in thermal expansion coefficient (linear expansion coefficient) between adjacent components may decrease as it goes upward. That is, the difference between the coefficient of thermal expansion (or coefficient of linear expansion) between the substrate 100 and the semiconductor device 200 may be smaller than the difference between the coefficient of thermal expansion (or coefficient of linear expansion) between the semiconductor device 200 and the wavelength conversion layer 300.

In this case, the width of the cover layer 500 may increase from the lower surface 500a toward the upper surface 500c. Accordingly, when the semiconductor device generates light and heat is generated according to the light generation, the shape of each component in the semiconductor device package may change according to a difference in thermal expansion coefficient between each other. However, since the cover layer 500 has a coefficient of thermal expansion smaller than that of the encapsulation layer 600, the repelling force is lowered due to changes in shape due to heat from the outside of the wavelength conversion layer 300 and the light-transmitting layer 400, causing cracks. The occurrence of the like can be easily prevented.

In addition, when the lower surface 500a and the upper surface 500c have different widths, the side surface 500b may be disposed to be inclined with respect to the lower surface 500a or the upper surface 500c. In an embodiment, the side surface 500b may extend outward toward the top.

And, except for the contents described in FIG. 3, the substrate 100, the semiconductor device 200, the wavelength conversion layer 300, the light transmitting layer 400, the cover layer 500, the encapsulation layer 600, and the adhesive layer 700. As for the description, the contents described in FIGS. 1 and 2 may be equally applied.

3B is another modified example of FIG. 1.

Referring to FIG. 3B, a semiconductor device package 10a ″ according to a modified example includes a substrate 100, a semiconductor device 200 disposed on the substrate 100, and a wavelength conversion layer disposed on the semiconductor device 200. 300, the light transmitting layer 400 disposed on the wavelength conversion layer 300, the cover layer 500 disposed above the semiconductor device 200 and outside the wavelength conversion layer 300, the outside of the semiconductor device 200 It may include an encapsulation layer 600 disposed and an adhesive layer 700 disposed between the semiconductor device 200 and the wavelength conversion layer 300.

In this case, the cover layer 500 may include a lower surface 500a, an outer surface 500b, an upper surface 500c, and an inner surface 500d. As described in FIG. 3A, the width Wa of the lower surface 500a in the second direction (Y-axis direction) may be different from the width Wb in the second direction (Y-axis direction) of the upper surface 500c. In an embodiment, the width Wa of the lower surface 500a in the second direction (Y-axis direction) may be smaller than the width Wb in the second direction (Y-axis direction) of the upper surface 500c.

In addition, in the semiconductor device package, a difference in thermal expansion coefficient (linear expansion coefficient) between adjacent components may decrease as it goes upward. That is, the difference between the coefficient of thermal expansion (or coefficient of linear expansion) between the substrate 100 and the semiconductor device 200 may be smaller than the difference between the coefficient of thermal expansion (or coefficient of linear expansion) between the semiconductor device 200 and the wavelength conversion layer 300.

In this case, the width of the cover layer 500 may increase from the lower surface 500a toward the upper surface 500c. Accordingly, when the semiconductor device generates light and heat is generated according to the light generation, the shape of each component in the semiconductor device package may change according to a difference in thermal expansion coefficient between each other. However, since the cover layer 500 has a coefficient of thermal expansion smaller than that of the encapsulation layer 600, the repelling force is lowered due to changes in shape due to heat from the outside of the wavelength conversion layer 300 and the light-transmitting layer 400, causing cracks. The occurrence of the like can be easily prevented.

In addition, when the lower surface 500a and the upper surface 500c have different widths, the outer surface 500b may be disposed to be inclined with respect to the lower surface 500a or the upper surface 500c. In an embodiment, the outer surface 500b may extend outward as it faces upward.

In addition, the inner surface 500d may be disposed to be inclined at a first angle θ ₁ with respect to the first direction (X-axis direction). That is, the inner surface 500d may be disposed to be inclined toward the outside. In addition, the first angle θ ₁ may be 0 degrees to 45 degrees. With this configuration, the light converted by the wavelength conversion layer 300 may have an increased reflectivity on the inner surface 500d. In addition, light emitted from the light-transmitting layer 400 to the side due to internal reflection or the like may be easily reflected upward from the inner surface 500d. Accordingly, the semiconductor device package 10a ″ may improve light extraction efficiency. 4 is a conceptual diagram of a semiconductor device according to an embodiment.

Referring to FIG. 4, a semiconductor device according to an embodiment of the present invention includes a light emitting structure 220, a first insulating layer 271 disposed on the light emitting structure 220, and a first conductive type semiconductor layer 221. A first ohmic electrode 251 disposed on, a second ohmic electrode 261 disposed on the second conductivity type semiconductor layer 223, and a first cover electrode 252 disposed on the first ohmic electrode 251 , A second cover electrode 262 disposed on the second ohmic electrode 261, and a second insulating layer 272 disposed on the first cover electrode 252 and the second cover electrode 262. I can.

x1≤1, 0<y1≤1, 0≤x1+y1≤1) 물질을 포함할 수 있다. 여기서, Al의 조성은 In 원자량과 Ga 원자량 및 Al 원자량을 포함하는 전체 원자량과 Al 원자량의 비율로 나타낼 수 있다. 예를 들어, Al 조성이 40%인 경우 Ga 의 조성은 60%인 Al₄₀Ga₆₀N일 수 있다. When the light emitting structure 220 emits light in the ultraviolet wavelength band, each semiconductor layer of the light emitting structure 220 includes In _x1 Al _y1 Ga _{1 -x1- y1} N(0

x1≤1, 0<y1≤1, 0≤x1+y1≤1) may include a material. Here, the composition of Al can be represented by the ratio of the total atomic weight including the atomic weight of In, the atomic weight of Ga, and the atomic weight of Al and the atomic weight of Al. For example, when the Al composition is 40%, the composition of Ga may be 60% Al ₄₀ Ga ₆₀ N.

In addition, in the description of the embodiment, the meaning of the composition being low or high may be understood as a difference (and/or a percentage point) of the composition% of each semiconductor layer. For example, if the aluminum composition of the first semiconductor layer is 30% and the aluminum composition of the second semiconductor layer is 60%, the aluminum composition of the second semiconductor layer can be expressed as 30% higher than the aluminum composition of the first semiconductor layer. have.

The transparent substrate 210 may be formed of a material selected from among sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto. The light-transmitting substrate 210 may be a light-transmitting member through which light in the ultraviolet wavelength band can be transmitted.

The buffer layer 211 may alleviate lattice mismatch between the transparent substrate 210 and the semiconductor layers. The buffer layer 211 may be in a form in which a group III and a group V element are combined, or may include any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. In this embodiment, the buffer layer 211 may be AlN, but is not limited thereto. The buffer layer 211 may include a dopant, but is not limited thereto.

The first conductivity-type semiconductor layer 221 may be implemented as a compound semiconductor such as Group III-V or Group II-VI, and may be doped with a first dopant. The first conductivity type semiconductor layer 221 is a semiconductor material having a composition formula of In _x1 Al _y1 Ga _{1 -x1 -y1} N (0≤x1≤1, 0<y1≤1, 0≤x1+y1≤1), for example For example, it may be selected from AlGaN, AlN, InAlGaN, and the like. In addition, the first dopant may be an n-type dopant such as Si, Ge, Sn, Se, and Te. When the first dopant is an n-type dopant, the first conductivity-type semiconductor layer 221 doped with the first dopant may be an n-type semiconductor layer.

The active layer 222 may be disposed between the first conductivity type semiconductor layer 221 and the second conductivity type semiconductor layer 223. The active layer 222 is a layer in which electrons (or holes) injected through the first conductivity type semiconductor layer 221 and holes (or electrons) injected through the second conductivity type semiconductor layer 223 meet. The active layer 222 transitions to a low energy level as electrons and holes recombine, and may generate light having an ultraviolet wavelength.

The active layer 222 may have any one of a single well structure, a multiple well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure or a quantum wire structure, and the active layer 222 The structure of is not limited thereto.

x2≤1, 0<y2≤1, 0≤x2+y2≤1)의 조성식을 가질 수 있다. 우물층은 발광하는 파장에 따라 알루미늄 조성이 달라질 수 있다.The active layer 222 may include a plurality of well layers (not shown) and a barrier layer (not shown). The well layer and the barrier layer are In _x2 Al _y2 Ga _{1 -x2- y2} N(0

x2≤1, 0<y2≤1, 0≤x2+y2≤1) may have a composition formula. The composition of aluminum in the well layer may vary depending on the emission wavelength.

The second conductivity-type semiconductor layer 223 is formed on the active layer 222 and may be implemented as a compound semiconductor such as Group III-V or Group II-VI. Dopants can be doped.

The second conductivity type semiconductor layer 223 is a semiconductor material or AlInN having a composition formula of In _x5 Al _y2 Ga _{1 -x5- y2} N (0≤x5≤1, 0<y2≤1, 0≤x5+y2≤1). , AlGaAs, GaP, GaAs, GaAsP, AlGaInP may be formed of a selected material.

When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, Ba, or the like, the second conductivity-type semiconductor layer 223 doped with the second dopant may be a p-type semiconductor layer.

The first insulating layer 271 may be disposed between the first ohmic electrode 251 and the second ohmic electrode 261. Specifically, the first insulating layer 271 may include a first hole 271a in which the first ohmic electrode 251 is disposed and a second hole 271b in which the second ohmic electrode 261 is disposed.

The first ohmic electrode 251 may be disposed on the first conductivity type semiconductor layer 221, and the second ohmic electrode 261 may be disposed on the second conductivity type semiconductor layer 223.

The first ohmic electrode 251 and the second ohmic electrode 261 are indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), and indium gallium (IGZO). zinc oxide), IGTO(indium gallium tin oxide), AZO(aluminum zinc oxide), ATO(antimony tin oxide), GZO(gallium zinc oxide), IZON(IZO Nitride), AGZO(Al-Ga ZnO), IGZO(In -Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, or Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, It may be formed by including at least one of In, Ru, Mg, Zn, Pt, Au, and Hf, but is not limited to these materials. For example, the first ohmic electrode 251 may have a plurality of metal layers (eg, Cr/Al/Ni), and the second ohmic electrode 261 may be ITO.

5 is a cross-sectional view of a semiconductor device package according to the second embodiment, FIG. 6A is an enlarged view of portion B in FIG. 5, and FIG. 6B is a modified example of FIG. 5.

5 and 6A, the semiconductor device package 10b according to the second embodiment includes a substrate 100, a semiconductor device 200 disposed on the substrate 100, and a semiconductor device 200 disposed on the semiconductor device 200. The wavelength conversion layer 300, the light-transmitting layer 400 disposed on the wavelength conversion layer 300, the cover layer 500 disposed above the semiconductor device 200 and outside the wavelength conversion layer 300, and the semiconductor device ( 200) It may include an encapsulation layer 600 disposed outside.

Specifically, the width Wc of the semiconductor device 200 in the second direction (Y-axis direction) may be different from the width We in the second direction (Y-axis direction) of the wavelength conversion layer 300. In an embodiment, the width Wc in the second direction (Y-axis direction) of the semiconductor device 200 may be greater than the width We in the second direction (Y-axis direction) of the wavelength conversion layer 300.

In addition, the width Wd of the light-transmitting layer 400 in the second direction (Y-axis direction) may be greater than the width We in the second direction (Y-axis direction) of the wavelength conversion layer 300.

With this configuration, the wavelength conversion layer 300 can maintain a constant ratio of color mixture to transmitted light. That is, since the wavelength conversion layer 300 reduces color irregularities of emitted light, the semiconductor device package 10b according to the second exemplary embodiment may improve color uniformity of light.

In addition, the cover layer 500 may include a first cover member 510, a second cover member 520, and a third cover member 530.

The first cover member 510 may be disposed outside the wavelength conversion layer 300 on the semiconductor device 200 as described above. In addition, the first cover member 510 may be disposed to overlap the wavelength conversion layer 300 in the second direction (Y-axis direction) without overlapping with the semiconductor device 200 in the first direction (X-axis direction).

As described above, the second cover member 520 may be disposed on the first cover member 510 to overlap the first cover member 510 in a first direction (X-axis direction). Also, the second cover member 520 may be disposed to overlap the light transmitting layer 400 in the second direction (Y-axis direction).

In addition, as described above, the first cover member 510 and the second cover member 520 transmit light between the encapsulation layer 600 and the wavelength conversion layer 300 and the encapsulation layer 600 on the semiconductor device 200 as described above. It is disposed between the layers 400 to prevent deterioration from moving to the semiconductor device 200.

Also, the third cover member 530 may be a portion extending inward from the first cover member 510. That is, the third cover member 530 may be disposed between the light transmitting layer 400 and the semiconductor device 200, and may overlap the wavelength conversion layer 300 in the second direction (Y-axis direction). That is, the third cover member 530 is disposed in a region between the semiconductor device 200 and the light-transmitting layer 400 in which heat and light are generated the most, so that deterioration may be minimized.

In addition, the third cover member 530 may contact the side surface of the wavelength conversion layer 300. In addition, the third cover member 530 may have an upper surface in contact with the light-transmitting layer 400 and a lower surface of the third cover member 530 in contact with the semiconductor device 200.

Specifically, as described above, the cover layer 500 may include a lower surface 500a, a side surface 500b, and an upper surface 500c.

In addition, the lower surface 500a may include a first lower surface portion 500a-1 and a second lower surface portion 500a-2. The first lower surface 500a-1 may be a lower surface of the first cover member 510, and the second lower surface 500a-2 may be a lower surface of the third cover member 530. In this case, the second lower surface portion 500a-2 may contact the upper surface of the semiconductor device 200. With this configuration, the third cover member 530 is thermally expanded even if the wavelength conversion layer 300 and the light-transmitting layer 400 expand due to the light that guides the wavelength conversion layer 300 and the light-transmitting layer 400 and transmitted heat. Since the coefficient is low, deterioration of the semiconductor device 200 can be prevented. In addition, the third cover member 530 is disposed between the wavelength conversion layer 300 and the encapsulation layer 600 on the semiconductor device 200 to easily prevent deterioration from spreading to the semiconductor device 200 generating light. I can.

In an embodiment, the width Wf of the third cover member 530 in the second direction (Y-axis direction) is the width Wc of the semiconductor device 200, the width We of the wavelength conversion layer 300, or light transmission It may be smaller than the width Wd of the layer 400. Accordingly, it is possible to improve light transmission and light flux through the wavelength conversion layer 300 and the light-transmitting layer 400, improve light uniformity, and prevent deterioration from propagating to the semiconductor device.

In addition, the cover layer 500 may be deteriorated by light emitted from the wavelength conversion layer 300 to the side. In addition, deterioration may be accelerated by heat caused by light.

The cover layer 500 according to the embodiment may have a light emitting area of the semiconductor device 200 within 0.01 mm ² to 9.00 mm ² , and in this case, the third cover member 530 is in the second direction (Y-axis direction) The width Wf may be 10 μm to 200 μm. In addition, the third cover member 530 may have a height of 5 μm to 200 μm in the first direction (X-axis direction).

Specifically, the ratio between the light emitting area of the semiconductor device 200 and the width Wf of the third cover member 530 in the second direction (Y-axis direction) may be 1:1 to 1:1.5 (mm/mm ² ). have. In addition, a ratio between the light emitting area of the semiconductor device 200 and the height of the three cover members 530 in the first direction (X-axis direction) may be 1:0.02 to 1:9.

When the above-described ratio is less than 1:1 (or 1;0.02), the light emitting area of the semiconductor device is large, and the deterioration effect by the cover layer 500 can be suppressed due to the increase of the light flux and the effect of thermal expansion by light. Exists.

In addition, when the above-described ratio is greater than 1:1.5 (or 1:9), there is a limit in that the deterioration factor is small, the adhesive force by the cover layer 500 decreases, the extracted light is absorbed, and the extraction efficiency is lowered.

In other words, the cover layer according to the embodiment can easily block deterioration due to light and acceleration of deterioration due to heat even if light emitted from the semiconductor device proceeds to the side through the width or height of the rain.

And, except for the contents described in FIGS. 5 and 6A, the substrate 100, the semiconductor device 200, the wavelength conversion layer 300, the light transmitting layer 400, the cover layer 500, the encapsulation layer 600, and the adhesive layer. As for the description of 700, the contents described in FIGS. 1 and 2 may be equally applied.

Referring to FIG. 6B, a semiconductor device package 10b ′ according to a modified example includes a substrate 100, a semiconductor device 200 disposed on the substrate 100, and a wavelength conversion layer 300 disposed on the semiconductor device 200. ), a light transmitting layer 400 disposed on the wavelength conversion layer 300, a cover layer 500 disposed above the semiconductor device 200 and outside the wavelength conversion layer 300, and disposed outside the semiconductor device 200 It may include an encapsulation layer 600.

Specifically, the cover layer 500 may include a lower surface 500a, an outer surface 500b, an upper surface 500c, and an inner surface 500d, 500e, 500f, as described above in FIG. 6A. Furthermore, the inner surface may include a first inner surface 500d, a second inner surface 500e, and a third inner surface 500f.

First, the lower surface 500a may include a first lower surface and a second lower surface. The first lower surface may be a lower surface of the first cover member 510, and the second lower surface may be a lower surface of the third cover member 530. In this case, the second lower surface may contact the upper surface of the semiconductor device 200. With this configuration, the third cover member 530 is thermally expanded even if the wavelength conversion layer 300 and the light-transmitting layer 400 expand due to the light that guides the wavelength conversion layer 300 and the light-transmitting layer 400 and transmitted heat. Since the coefficient is low, deterioration of the semiconductor device 200 can be prevented. In addition, the third cover member 530 is disposed between the wavelength conversion layer 300 and the encapsulation layer 600 on the semiconductor device 200 to easily prevent deterioration from spreading to the semiconductor device 200 generating light. I can.

In addition, the first inner surface 500d is an inner surface of the second cover member 520 and may be positioned to contact the outer surface of the light transmitting layer 400. In addition, the second inner surface 500e may be positioned as an upper surface of the third cover member 530 and in contact with the lower surface of the light-transmitting layer 400. In addition, the third inner surface 500f is an inner surface of the third cover member 5300 and may contact the outer surface of the wavelength conversion layer 300.

In addition, the first inner surface 500d, the second inner surface 500e, and the third inner surface 500f are sequentially arranged along the first direction (X-axis direction) and are positioned inward toward the lower side, and thus the second direction ( The width can decrease in the Y-axis direction).

Furthermore, the third inner surface 500f may be disposed to be inclined at a second angle θ ₂ with respect to the first direction (X-axis direction). That is, the third inner surface 500f may be disposed to be inclined toward the outside. Accordingly, the width of the third inner surface 500f may decrease toward the bottom. In addition, the second angle θ ₂ may be 0 degrees to 45 degrees. With this configuration, the light converted by the wavelength conversion layer 300 may have an increased reflectivity on the third inner surface 500f. Accordingly, the light emitted from the semiconductor device 200 may be reflected from the third inner surface 500f and easily extracted upward. That is, the light extraction efficiency can be improved.

In addition, the first inner surface 500d may also be disposed to be inclined toward the outside at a predetermined angle with respect to the first direction (X-axis direction). Likewise, the width of the first inner surface 500d may decrease as it goes downward. Accordingly, light emitted from the light transmitting layer 400 to the side by internal reflection or the like can be easily reflected upward from the first inner surface 500d. Accordingly, the semiconductor device package 10a ″ may improve light extraction efficiency.

7 is a cross-sectional view of a semiconductor device package according to the third embodiment.

Referring to FIG. 7, a semiconductor device package 10c according to a third embodiment includes a substrate 100, a semiconductor device 200 disposed on the substrate 100, and a wavelength conversion layer disposed on the semiconductor device 200. 300, the light transmitting layer 400 disposed on the wavelength conversion layer 300, the cover layer 500 disposed above the semiconductor device 200 and outside the wavelength conversion layer 300, and the outside of the semiconductor device 200 It may include an encapsulation layer 600 disposed on.

The cover layer 500 may include only the third cover member (530 in FIGS. 5 and 6) described above. In addition, the width Wc of the semiconductor device 200 in the second direction (Y-axis direction) may be different from the width We in the second direction (Y-axis direction) of the wavelength conversion layer 300. In an embodiment, the width Wc in the second direction (Y-axis direction) of the semiconductor device 200 may be greater than the width We in the second direction (Y-axis direction) of the wavelength conversion layer 300. In addition, the width Wd of the light-transmitting layer 400 in the second direction (Y-axis direction) may be greater than the width We in the second direction (Y-axis direction) of the wavelength conversion layer 300.

That is, the semiconductor device 200 partially overlaps the wavelength conversion layer 300 in the first direction (X-axis direction), and the above-described cover layer 500 may be disposed on the remaining area (area not overlapped). . Accordingly, the cover layer 500 is disposed in an empty space between the wavelength conversion layer 300 and the encapsulation layer 600, so that deterioration occurs at the boundary between the wavelength conversion layer 300 and the encapsulation layer 600 by light guide. You can block what you do.

Except for the contents described in FIG. 7, the substrate 100, the semiconductor device 200, the wavelength conversion layer 300, the light-transmitting layer 400, the cover layer 500, the encapsulation layer 600, and the adhesive layer 700 As for the description, the contents described in FIGS. 1 and 2 may be equally applied.

8 is a cross-sectional view of a semiconductor device package according to a fourth embodiment.

Referring to FIG. 8, a semiconductor device package 10d according to a fourth embodiment includes a substrate 100, a semiconductor device 200 disposed on the substrate 100, and a wavelength conversion layer disposed on the semiconductor device 200. 300, the light transmitting layer 400 disposed on the wavelength conversion layer 300, the cover layer 500 disposed above the semiconductor device 200 and outside the wavelength conversion layer 300, and the outside of the semiconductor device 200 It may include an encapsulation layer 600 disposed on. In addition, a plurality of first bonding units 110a and 110b and second bonding units 120a and 120b may be formed according to the number of semiconductor devices.

In addition, a plurality of semiconductor devices 200 may be spaced apart from each other in the second direction (Y-axis direction) on the substrate 100. For example, the semiconductor device may include a first semiconductor device 200a and a second semiconductor device 200b.

Also, the cover layers 500-1 and 500-2 may be disposed outside the wavelength conversion layers 300a and 300b on the semiconductor device 200. In an embodiment, the cover layer includes a first cover layer 500-1 disposed outside (eg, an edge) of the semiconductor device package and a second cover layer 500-2 disposed inside the first cover layer 500-1. ) Can be included. For example, the first cover layer 500-1 may be disposed on the first semiconductor device 200a and the second semiconductor device 200b and overlap in the first direction (X-axis direction). In addition, the second cover layer 500-2 is disposed on the first semiconductor device 200a and the second semiconductor device 200b, but may partially overlap in the first direction (X-axis direction).

In other words, the first cover layer 500-1 and the second cover layer 500-2 are disposed in a region between the semiconductor device 200 and the light-transmitting layer 400 where heat and light are generated most, and deterioration occurs. Can be suppressed.

In addition, the first cover layer 500-1 has a height hb in the first direction (X-axis direction) than the height ha in the first direction (X-axis direction) of the second cover layer 500-2. It can be small. That is, according to the embodiment, the second cover layer 500-2 has a thickness greater than the outer side in a region between the plurality of semiconductor devices 200a and 200b, and thus a plurality of heat or light overlapping between adjacent semiconductor devices A deterioration blocking effect may be further improved in a region between the two semiconductor devices 200a and 200b.

In addition, in an embodiment, the width of the wavelength conversion layers 300a and 300b may be smaller than the widths of the semiconductor devices 200a and 200b as described with reference to FIGS. 5 to 7. However, it is not limited to the cover layer shown in FIG. 8, and the structure of the cover layer of the semiconductor device package according to the first and second embodiments may be applied.

And, except for the contents described in FIG. 8, the substrate 100, the semiconductor device 200, the wavelength conversion layer 300, the light-transmitting layer 400, the cover layer 500, the encapsulation layer 600, and the adhesive layer 700. As for the description, the contents described in FIGS. 1 and 2 may be equally applied.

In the embodiment, the structure of the flip-type light emitting device has been described, but is not limited thereto. Exemplarily, the light emitting device according to the embodiment may have a vertical or horizontal structure.

The light emitting element can be applied to various types of light source devices. For example, the light source device may be a concept including a sterilization device, a curing device, a lighting device, and a display device and a vehicle lamp. That is, the light-emitting element can be applied to various electronic devices that are disposed in a case to provide light.

The sterilization device may sterilize a desired area by providing the light emitting device according to the embodiment. The sterilization device may be applied to household appliances such as water purifiers, air conditioners, and refrigerators, but is not limited thereto. That is, the sterilization device can be applied to all products (eg, medical devices) that require sterilization.

Exemplarily, the water purifier may include a sterilization device according to an embodiment to sterilize circulating water. The sterilization device is disposed in a nozzle or outlet through which water circulates to irradiate ultraviolet rays. In this case, the sterilization device may include a waterproof structure.

The curing apparatus may cure various types of liquids by including the light emitting device according to the embodiment. The liquid may be the broadest concept including all of the various materials that are cured when irradiated with ultraviolet rays. Exemplarily, the curing device can cure various types of resins. Alternatively, the curing device may be applied to cure cosmetic products such as manicure.

The lighting device may include a light source module including a substrate and a light emitting device of the embodiment, a heat dissipation unit for dissipating heat from the light source module, and a power supply unit for processing or converting an electrical signal provided from the outside to provide the light source module. In addition, the lighting device may include a lamp, a head lamp, or a street light.

The display device may include a bottom cover, a reflector, a light emitting module, a light guide plate, an optical sheet, a display panel, an image signal output circuit, and a color filter. The bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may constitute a backlight unit.

The reflector is disposed on the bottom cover, and the light emitting module may emit light. The light guide plate is disposed in front of the reflective plate to guide light emitted from the light emitting module to the front, and the optical sheet may include a prism sheet and the like, and may be disposed in front of the light guide plate. A display panel may be disposed in front of the optical sheet, an image signal output circuit supplies an image signal to the display panel, and a color filter may be disposed in front of the display panel.

When the light emitting element is used as a backlight unit of a display device, it may be used as an edge type backlight unit or a direct type backlight unit.

The light emitting device may be a laser diode in addition to the light emitting diode described above.

Like the light emitting device, the laser diode may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer having the above-described structure. In addition, the p-type first conductivity type semiconductor and the n-type second conductivity type semiconductor are bonded to each other and use the electro-luminescence phenomenon in which light is emitted when current is passed, but the direction of the emitted light There are differences in and phase. In other words, in the laser diode, light having a specific wavelength (monochrome light, monochromatic beam) can be emitted in the same direction with the same phase by using a phenomenon of stimulated emission and constructive interference. Therefore, it can be used for optical communication, medical equipment, and semiconductor processing equipment.

As an example of the light-receiving element, a photodetector, which is a kind of transducer that detects light and converts its intensity into an electric signal, is exemplified. As such photodetectors, photovoltaic cells (silicon, selenide), photovoltaic devices (cadmium sulfide, cadmium selenide), photodiodes (eg, PD with peak wavelength in visible blind spectral region or true blind spectral region), photoelectric devices Transistors, photomultiplier tubes, photoelectric tubes (vacuum, gas encapsulated), IR (Infra-Red) detectors, etc. are provided, but embodiments are not limited thereto.

In addition, a light-emitting device such as a photodetector may be generally manufactured using a direct bandgap semiconductor having excellent light conversion efficiency. Alternatively, photodetectors have various structures, and the most common structures include a pin-type photodetector using a pn junction, a Schottky photodetector using a Schottky junction, and a metal semiconductor metal (MSM) photodetector. have.

The photodiode may include a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer having the above-described structure, as in the light emitting device, and has a pn junction or a pin structure. The photodiode operates by applying a reverse bias or a zero bias, and when light is incident on the photodiode, electrons and holes are generated and a current flows. At this time, the magnitude of the current may be substantially proportional to the intensity of light incident on the photodiode.

A photovoltaic cell or a solar cell is a type of photodiode and can convert light into electric current. The solar cell may include a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer having the above-described structure, similarly to the light emitting device.

In addition, it may be used as a rectifier of an electronic circuit through the rectification characteristic of a general diode using a p-n junction, and may be applied to an ultra-high frequency circuit and applied to an oscillation circuit.

In addition, the above-described light emitting device is not necessarily implemented with only a semiconductor, and may further include a metallic material in some cases. For example, a light-emitting device such as a light-receiving device may be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, or As, and may be implemented by a p-type or n-type dopant. It may be implemented using a doped semiconductor material or an intrinsic semiconductor material.

Claims (10)

Board;
A semiconductor device disposed on the substrate;
A wavelength conversion layer disposed on the semiconductor device;
A cover layer disposed above the semiconductor device and outside the wavelength conversion layer; And
Including; an encapsulation layer disposed outside the semiconductor device and the cover layer,
The cover layer has a coefficient of thermal expansion smaller than that of the encapsulation layer.
The method of claim 1,
It further includes a light-transmitting layer disposed on the wavelength conversion layer,
The cover layer includes a first cover member disposed outside the wavelength conversion layer; And a second cover member extending in a first direction from the first cover member and disposed outside the light-transmitting layer,
The first direction is a direction from the substrate toward the semiconductor device.
The method of claim 2,
The first cover member is a semiconductor device package overlapping the wavelength conversion layer in a second direction perpendicular to the first direction.
The method of claim 3,
The second cover member is a semiconductor device package overlapping the light-transmitting layer in the second direction.
The method of claim 3,
The semiconductor device package has a length in the second direction greater than a length in the second direction of the wavelength conversion layer.
The method of claim 3,
The cover layer further comprises a third cover member disposed between the light transmitting layer and the semiconductor device.
The method of claim 6,
The third cover member is a semiconductor device package overlapping the wavelength conversion layer in the second direction.
The method of claim 7,
The third cover member is a semiconductor device package in contact with the semiconductor device and the light-transmitting layer.
The method of claim 1,
The cover layer may include a first cover layer disposed outside the semiconductor device; And a second cover layer disposed inside the first cover layer,
The height of the first cover layer is smaller than the height of the second cover layer.
The method of claim 1,
The cover layer is a semiconductor device package made of an inorganic material.

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