KR20200110135A - 성막 장치, 성막 시스템 - Google Patents

성막 장치, 성막 시스템 Download PDF

Info

Publication number
KR20200110135A
KR20200110135A KR1020190146862A KR20190146862A KR20200110135A KR 20200110135 A KR20200110135 A KR 20200110135A KR 1020190146862 A KR1020190146862 A KR 1020190146862A KR 20190146862 A KR20190146862 A KR 20190146862A KR 20200110135 A KR20200110135 A KR 20200110135A
Authority
KR
South Korea
Prior art keywords
film forming
forming apparatus
vacuum chamber
substrate
film
Prior art date
Application number
KR1020190146862A
Other languages
English (en)
Korean (ko)
Inventor
아츠오 혼다
Original Assignee
캐논 톡키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 톡키 가부시키가이샤 filed Critical 캐논 톡키 가부시키가이샤
Publication of KR20200110135A publication Critical patent/KR20200110135A/ko

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • H01L51/001
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
KR1020190146862A 2019-03-15 2019-11-15 성막 장치, 성막 시스템 KR20200110135A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2019-048607 2019-03-15
JP2019048607A JP7299725B2 (ja) 2019-03-15 2019-03-15 成膜装置、成膜システム

Publications (1)

Publication Number Publication Date
KR20200110135A true KR20200110135A (ko) 2020-09-23

Family

ID=72430393

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190146862A KR20200110135A (ko) 2019-03-15 2019-11-15 성막 장치, 성막 시스템

Country Status (3)

Country Link
JP (1) JP7299725B2 (zh)
KR (1) KR20200110135A (zh)
CN (1) CN111690895B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024054768A (ja) 2022-10-05 2024-04-17 キヤノントッキ株式会社 成膜装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007222431A (ja) 2006-02-24 2007-09-06 Hitachi Ltd 磁気共鳴イメージング装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06240443A (ja) * 1992-12-26 1994-08-30 Sony Corp 真空薄膜製造装置及びこれを用いた磁気記録媒体の製造方法
JP2004335510A (ja) 2003-04-30 2004-11-25 Nikon Corp ステージ装置及び露光装置
JP5277059B2 (ja) * 2009-04-16 2013-08-28 株式会社日立ハイテクノロジーズ 成膜装置及び成膜システム
JP5783811B2 (ja) * 2010-07-06 2015-09-24 キヤノン株式会社 成膜装置
JP6008731B2 (ja) 2012-12-18 2016-10-19 キヤノントッキ株式会社 成膜装置
JP6394220B2 (ja) * 2014-09-17 2018-09-26 東京エレクトロン株式会社 アライメント装置及び基板処理装置
CN107002224B (zh) * 2014-11-17 2019-07-02 夏普株式会社 蒸镀装置、蒸镀方法及有机电致发光元件的制造方法
JP2016156052A (ja) 2015-02-24 2016-09-01 東レエンジニアリング株式会社 搬送装置
JP6262811B2 (ja) * 2016-07-08 2018-01-17 キヤノントッキ株式会社 真空成膜装置
JP6890968B2 (ja) 2016-12-26 2021-06-18 キヤノントッキ株式会社 圧力容器

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007222431A (ja) 2006-02-24 2007-09-06 Hitachi Ltd 磁気共鳴イメージング装置

Also Published As

Publication number Publication date
CN111690895B (zh) 2023-11-03
JP7299725B2 (ja) 2023-06-28
CN111690895A (zh) 2020-09-22
JP2020147830A (ja) 2020-09-17

Similar Documents

Publication Publication Date Title
JP7017619B2 (ja) 成膜装置、電子デバイスの製造装置、成膜方法、及び電子デバイスの製造方法
US20170250379A1 (en) Evaporation source having multiple source ejection directions
US20210265605A1 (en) Film formation device, vapor-deposited film formation method, and organic el display device production method
US20190292653A1 (en) Apparatus and method for transportation of a deposition source
WO2014097879A1 (ja) 成膜装置
KR102049668B1 (ko) 성막 장치
KR20200110135A (ko) 성막 장치, 성막 시스템
JP2021066952A (ja) 成膜装置、電子デバイスの製造装置、成膜方法、および電子デバイスの製造方法
JP2021080562A (ja) アライメント装置、アライメント方法、成膜装置、および成膜方法
CN111155054B (zh) 成膜装置、制造系统、有机el面板的制造系统
KR101925064B1 (ko) 면증발원을 이용한 고해상도 amoled 소자의 양산장비
JP7048696B2 (ja) 成膜装置
JP5232112B2 (ja) 成膜装置
KR20200087593A (ko) 성막장치 및 전자 디바이스 제조장치
TWI757930B (zh) 成膜裝置
KR101648489B1 (ko) 박막 증착 장치 및 이를 이용한 박막 증착 방법
KR102665601B1 (ko) 성막 장치 및 전자 디바이스의 제조 방법
KR102481920B1 (ko) 처리체 수납 장치와, 이를 포함하는 성막 장치
KR20220020211A (ko) 성막 장치 및 전자 디바이스의 제조 방법
KR20240047913A (ko) 성막 장치
WO2020030242A1 (en) Deposition apparatus having a mask aligner, mask arrangement for masking a substrate, and method for masking a substrate
JP2022167957A (ja) 成膜装置及び電子デバイスの製造方法
KR20150074716A (ko) 증착장치 및 이를 이용한 증착방법

Legal Events

Date Code Title Description
E902 Notification of reason for refusal