KR20190133074A - Pattern exposure method and device manufacturing method - Google Patents

Abstract

A first support member for supporting one of the mask and the substrate so as to follow the first surface curved in a cylindrical shape at a predetermined curvature, and a second support member for supporting the other of the mask and the substrate so as to follow the predetermined second surface; And a moving mechanism for rotating the first supporting member and moving the second supporting member to move the mask and the substrate in the scanning exposure direction, wherein the projection optical system is perpendicular to the center of the scanning exposure direction of the projection area. The image of a pattern is formed in a predetermined projection image surface by the projection light beam containing the principal ray which is substantially parallel to a phosphorus line, and a movement mechanism sets the movement speed of a 1st support member, and the movement speed of a 2nd support member. Then, the movement speed of the projection image surface of the pattern and the exposure surface of the substrate, the side of which the curvature is larger or the plane becomes relatively smaller than the other movement speed.

Description

Pattern exposure method and device manufacturing method {PATTERN EXPOSURE METHOD AND DEVICE MANUFACTURING METHOD}

The present invention relates to a substrate processing apparatus, a device manufacturing method, a scanning exposure method, an exposure apparatus, a device manufacturing system, and a device manufacturing method for projecting a pattern of a mask onto a substrate and exposing the pattern to the substrate.

There exists a device manufacturing system which manufactures various devices, such as display devices, such as a liquid crystal display, and a semiconductor. The device manufacturing system is equipped with substrate processing apparatuses, such as an exposure apparatus. The substrate processing apparatus of patent document 1 projects the image of the pattern formed in the mask arrange | positioned at the illumination area | region, etc. to the board | substrate arrange | positioned at a projection area | region, and exposes the pattern to a board | substrate. The mask used for a substrate processing apparatus has a planar shape, a cylindrical thing, etc.

In the exposure apparatus used in the photolithography process, the exposure apparatus which exposes a board | substrate using a cylindrical or cylindrical mask (henceforth collectively called a "cylindrical mask") as disclosed in the following patent document is known. (For example, patent document 2). Moreover, the exposure apparatus which continuously exposes the device pattern for display panels on the long sheet substrate which has a flexible (flexible) using a cylindrical mask is also known (for example, patent Document 3).

Patent Document 1: Japanese Patent Application Laid-Open No. 2007-299918 Patent Document 2: International Publication WO2008 / 029917 Patent Document 3: Japanese Patent Application Laid-Open No. 2011-221538

Here, the substrate processing apparatus can shorten the scanning exposure time with respect to one short area | region or a device area | region on a board | substrate by enlarging the exposure area | region (slit projection area | region) in a scanning exposure direction, and a unit Productivity, such as the number of sheets of substrate processed per hour, can be improved. However, as described in Patent Literature 1, when the rotatable cylindrical mask is used to improve the productivity, the mask pattern is curved in a cylindrical shape, so that the circumferential direction of the mask pattern (cylindrical shape) Direction, and when the dimension of the scanning exposure direction of a slit-shaped projection area is enlarged, the quality (image quality) of the pattern projected and exposed to a board | substrate may fall.

As described in Patent Document 2, the cylindrical or cylindrical mask has an outer circumferential surface (cylindrical surface) having a constant radius from a predetermined rotation center axis (center line), and an electronic device (for example, a semiconductor) on the outer circumferential surface thereof. Mask patterns) are formed. When transferring the mask pattern onto the photosensitive substrate (wafer), the cylindrical mask is rotated synchronously around the rotational central axis while moving the substrate in one direction at a predetermined speed. In that case, if the diameter of the cylindrical mask is set so that the entire circumferential length of the outer circumferential surface of the cylindrical mask corresponds to the length of the substrate, the mask pattern can be continuously exposed to scanning over the length of the substrate. Moreover, when using such a cylindrical mask like patent document 3, while sending a long flexible sheet | seat board | substrate (with a photosensitive layer) at a predetermined speed in a long direction, it will only rotate a cylindrical mask in synchronization with the speed, and a sheet The pattern for a display panel can be repeatedly exposed on a board | substrate. Thus, when a cylindrical mask is used, the efficiency of an exposure process of a board | substrate and a tact are improved, and productivity of an electronic device, a display panel, etc. is expected to increase.

However, especially when the mask pattern for a display panel is exposed, the screen size of the display panel varies from several inches to several tens of inches, and the size and aspect ratio of the mask pattern region therefor are also various. In this case, if the diameter of the cylindrical mask that can be attached to the exposure apparatus or the dimension of the rotational central axis direction are determined uniquely, the mask pattern region can be efficiently applied to the outer circumferential surface of the cylindrical mask in response to display panels of various sizes. It becomes difficult to place For example, in the case of a display panel of a large screen size, even if the mask pattern region for one surface of the display panel can be formed around the entire circumference of the outer circumferential surface of the cylindrical mask, the display panel is slightly smaller than the size. In this case, the mask pattern region for two planes cannot be formed, and the margin in the circumferential direction (or the rotation center axis direction) increases.

An object of the present invention is to provide a substrate processing apparatus, a device manufacturing method, and a scanning exposure method capable of producing a high quality substrate with high productivity.

Another aspect of the present invention is to provide an exposure apparatus, a device manufacturing system, and a device manufacturing method using such an exposure apparatus, which can mount cylindrical masks having different diameters.

According to the first aspect of the present invention, there is provided a substrate processing apparatus including a projection optical system that projects a light beam from a pattern of a mask disposed in an illumination region of illumination light onto a projection region in which a substrate is disposed, wherein the illumination region and the projection region are provided. A first support member for supporting one of the mask and the substrate so as to follow a first surface curved in a cylindrical shape at a predetermined curvature in one of the regions; and the other of the illumination region and the projection region. A second support member for supporting the other of the mask and the substrate, the first support member being rotated, and the mask and the substrate supported by the first support member to be along a predetermined second surface in the region of? One of them is moved in the scanning exposure direction, and the second supporting member is moved, and the other of the mask and the substrate supported by the second supporting member is imaged. A movement mechanism for moving in the scanning exposure direction, wherein the projection optical system forms an image of the pattern on a predetermined projection image surface, and the movement mechanism moves the first support member. A speed and a moving speed of the second supporting member, and a moving speed of the projection image surface of the pattern and the exposure surface of the substrate, the side of which the curvature is greater or the plane becomes a plane smaller than the other movement speed. A processing device is provided.

According to a second aspect of the present invention, there is provided a device manufacturing method comprising forming a pattern of the mask on the substrate using the substrate processing apparatus according to the first aspect, and supplying the substrate to the substrate processing apparatus. do.

According to a third aspect of the present invention, a pattern formed on one surface of a mask curved in a cylindrical shape with a predetermined radius of curvature is projected onto a surface of a flexible substrate supported in a cylindrical or planar shape through a projection optical system; In addition, while moving the mask at a predetermined speed along the curved surface, the substrate is moved at a predetermined speed along the surface of the substrate supported in a cylindrical or planar shape, thereby projecting a projection image of the pattern by the projection optical system onto the substrate. In the scanning exposure to Rp, the radius of curvature of the projection image plane in which the projection image of the pattern by the projection optical system is formed in the best focus state is Rm, the radius of curvature of the surface of the substrate supported in the cylindrical or planar shape is Rp, and the movement of the mask. Rm when the moving speed of the pattern image moving along the projection image surface is Vm, and the predetermined speed along the surface of the substrate is Vp. A scanning exposure method is provided in which Vm is set to Vm in the case of <Rp, and Vm <Vp is set in the case of Rm> Rp.

According to the 4th aspect of this invention, the illumination optical system which guides an illumination light to the cylindrical mask which has a pattern on the outer peripheral surface of the curved surface curved by a predetermined curvature from a predetermined axis, the board | substrate support mechanism which supports a board | substrate, and the said illumination light A projection optical system for projecting the pattern of the illuminated cylindrical mask onto the substrate supported by the substrate support mechanism; an exchange mechanism for exchanging the cylindrical mask; and the exchange mechanism converting the cylindrical mask into a cylindrical mask having a different diameter. When it replaces, the exposure apparatus provided with the adjustment part which adjusts at least one of at least one part of the said illumination optical system and at least one part of the said projection optical system.

According to the fifth aspect of the present invention, one of a plurality of cylindrical masks having a pattern on the outer circumferential surface curved in a cylindrical shape with a predetermined radius from a predetermined axis and interchangeable with each other, A mask holding mechanism for rotating the circumference, an illumination system for irradiating illumination light onto the pattern of the cylindrical mask, and a substrate exposed by light from the pattern of the cylindrical mask irradiated with illumination light along a curved surface or plane There is provided an exposure apparatus including a substrate supporting mechanism for supporting and an adjusting portion for adjusting a distance between at least the predetermined axis and the substrate supporting mechanism in accordance with a diameter of the cylindrical mask mounted to the mask holding mechanism.

According to a sixth aspect of the present invention, there is provided a device manufacturing system including the exposure apparatus described above and a substrate supply apparatus for supplying the substrate to the exposure apparatus.

According to the 7th aspect of this invention, the said pattern of the said cylindrical mask is exposed to the said board | substrate using the above-mentioned exposure apparatus, and it respond | corresponds to the said pattern of the said cylindrical mask by processing the exposed said board | substrate. A device manufacturing method is provided that includes forming a device.

According to the aspect of the present invention, any one of the projection image surface on which the pattern image is formed and the surface of the substrate on which the pattern image is transferred are scanned while suppressing the deviation (image displacement) of the difference value caused by bending in the scanning exposure direction of the substrate. It becomes possible to take large exposure width at the time of exposure, and can obtain the board | substrate with which the pattern image is transferred with high quality with high productivity.

According to another aspect of the present invention, even when a cylindrical mask having a different diameter is mounted within a predetermined range, an exposure apparatus, a device manufacturing system, and a device manufacturing method capable of high-quality pattern transfer can be provided.

FIG. 1: is a figure which shows the structure of the device manufacturing system of 1st Embodiment.
FIG. 2 is a diagram illustrating an entire configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment.
3 is a diagram illustrating an arrangement of an illumination region and a projection region of the exposure apparatus shown in FIG. 2.
4 is a diagram illustrating the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in FIG. 2.
FIG. 5 is a diagram that exaggerates the behavior of the illumination light beam and the projection light beam in the mask. FIG.
It is a figure which shows typically the advancing direction of the illumination light beam and projection light beam in the polarization beam splitter in FIG.
FIG. 7 is an explanatory diagram showing the relationship between the movement of the projection image surface of the pattern of the mask and the movement of the exposure surface of the substrate.
8A shows an example of a change in the amount of deviation and the amount of difference in the image in the exposure width when there is no difference in the peripheral velocity between the projection image surface and the exposure surface. It is a graph.
8B is a graph showing an example of a change in the amount of deviation of the image and the amount of difference in the exposure width when there is a difference in the main speed between the projection image surface and the exposure surface.
8C is a graph showing an example of a change in the difference amount of the image in the exposure width when the difference between the exposure surface, the projection image surface, and the main speed is changed.
9 is a graph showing an example of a change in contrast ratio within the exposure width of the pattern projection image that changes depending on whether or not there is a difference in the main speed between the projection image surface and the exposure surface.
FIG. 10: is a figure which shows the whole structure of the exposure apparatus (substrate processing apparatus) of 2nd Embodiment.
It is explanatory drawing which shows exaggerated relationship between the movement of the projection image surface of the pattern of a mask, and the movement of the exposure surface of a board | substrate.
FIG. 12 is a graph showing an example of a change in the amount of deviation of an image in the exposure width that varies depending on whether there is a difference in the main speed between the projection image surface and the exposure surface in the second embodiment.
FIG. 13: A is a figure which shows light intensity distribution of the projection image of the L & S pattern on the mask M. FIG.
FIG. 13B is a diagram showing the light intensity distribution of the projection image of the isolated line ISO pattern on the mask M. FIG.
14 is a graph simulating the contrast value and contrast ratio of the projection image of the L & S pattern in a state where there is no main speed difference (before correction).
FIG. 15 is a graph simulating contrast values and contrast ratios of projection images of L & S patterns in a state where there is a main speed difference (after correction).
Fig. 16 is a graph simulating contrast values and contrast ratios in the projection image of an isolated (ISO) pattern in a state where there is no main speed difference (before correction).
Fig. 17 is a graph simulating contrast values and contrast ratios of projection images of isolated (ISO) patterns in a state where there is a main speed difference (after correction).
18 is a graph showing the relationship between the image displacement amount (shift amount) and the exposure width when the main speed of the projection image surface of the mask M is changed with respect to the movement speed of the exposure surface on the substrate.
19 is a graph showing an example of a simulation for evaluating the optimum exposure width based on the evaluation values Q1 and Q2 obtained by using the shift amount and the resolution.
FIG. 20 is a diagram illustrating an entire configuration of an exposure apparatus (substrate processing apparatus) according to the third embodiment.
FIG. 21: is a figure which shows the whole structure of the exposure apparatus (substrate processing apparatus) of 4th Embodiment.
It is explanatory drawing which shows the relationship between the movement of the projection image surface of the pattern of a mask, and the movement of the exposure surface of a board | substrate.
FIG. 23: is a figure which shows the whole structure of the exposure apparatus which concerns on 5th Embodiment.
24 is a flowchart illustrating a procedure when the mask used by the exposure apparatus is replaced with another mask.
25 is a diagram illustrating a relationship between the position of the viewing area on the mask side of the odd-numbered first projection optical system and the position of the viewing area on the mask side of the even-numbered second projection optical system.
Fig. 26 is a perspective view showing a mask having an information storage unit on the surface which stores mask information.
27 is a schematic diagram of an exposure condition setting table in which exposure conditions are described.
FIG. 28 is a diagram schematically showing the behavior of the illumination light beam and the projection light beam between masks having different diameters based on the previous FIG. 5.
FIG. 29 is a diagram illustrating a change in arrangement of the encoder head and the like when replacing with a mask having a different diameter. FIG.
30 is a diagram of a calibration device.
31 is a diagram for explaining calibration.
It is a side view which shows the example which rotatably supports a mask using an air bearing.
33 is a perspective view illustrating an example in which the mask is rotatably supported using an air bearing.
FIG. 34 is a diagram illustrating an entire configuration of an exposure apparatus according to a sixth embodiment.
35 is a diagram illustrating an overall configuration of an exposure apparatus according to a seventh embodiment.
36 is a perspective view showing a partial structural example of a support mechanism in the exposure apparatus of the reflective cylindrical mask M. FIG.
37 is a flowchart illustrating a device manufacturing method.

EMBODIMENT OF THE INVENTION The form (embodiment) for implementing this invention is demonstrated in detail, referring drawings. This invention is not limited by the content described in the following embodiment. In addition, the component described below includes the thing which a person skilled in the art can easily think, and the substantially same thing. In addition, the components described below can be appropriately combined. Moreover, various omission, substitution, or a change of a component can be made in the range which does not deviate from the summary of this invention. For example, in the following embodiment, although demonstrated as a case of manufacturing a flexible display as a device, it is not limited to this. As a device, the wiring board in which the wiring pattern by copper foil etc. is formed, the board | substrate in which many semiconductor elements (transistor, diode, etc.) are formed, etc. can also be manufactured.

[First embodiment]

In 1st Embodiment, the substrate processing apparatus which exposes a board | substrate to an exposure process is an exposure apparatus. Moreover, the exposure apparatus is assembled to the device manufacturing system which performs various processes to the board | substrate after exposure, and manufactures a device. First, a device manufacturing system will be described.

<Device manufacturing system>

FIG. 1: is a figure which shows the structure of the device manufacturing system of 1st Embodiment. The device manufacturing system 1 shown in FIG. 1 is a line (flexible display manufacturing line) which manufactures the flexible display as a device. As a flexible display, organic electroluminescent display etc. are mentioned, for example. This device manufacturing system 1 sends out the said board | substrate P from the supply roll FR1 which wound the flexible board | substrate P in roll shape, and is sent about the board | substrate P sent out. After performing various processes continuously, it is set as what is called a roll-to-roll method in which the board | substrate P after a process is wound to the collection roll FR2 as a flexible device. In the device manufacturing system 1 of 1st Embodiment, the board | substrate P which is a film-shaped sheet is sent out from the supply roll FR1, and the board | substrate P sent out from the supply roll FR1 is sequentially and an example until it is wound up by the recovery roll FR2 through n processing apparatuses U1, U2, U3, U4, U5, ..., Un are shown. First, the board | substrate P used as the process target of the device manufacturing system 1 is demonstrated.

As the board | substrate P, foil (foil) etc. which consist of metals or alloys, such as a resin film and stainless steel, are used, for example. Examples of the material of the resin film include polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, polystyrene resin, It contains one or two or more of vinyl acetate resins.

For example, it is preferable that the substrate P is selected so that the thermal expansion coefficient is not significantly large so that the amount of deformation due to heat received in various processes performed on the substrate P can be substantially ignored. The thermal expansion coefficient may be set smaller than the threshold value according to the process temperature, for example, by mixing the inorganic filler into the resin film. The inorganic filler may be titanium oxide, zinc oxide, alumina, silicon oxide or the like, for example. Moreover, the board | substrate P may be the single layer body of the very thin glass of about 100 micrometers thickness manufactured by the float method, etc., and the laminated body which bonded the said resin film, foil, etc. to this very thin glass may be sufficient. good.

The board | substrate P comprised in this way is rolled in roll shape, and becomes supply roll FR1, and this supply roll FR1 is attached to the device manufacturing system 1. The device manufacturing system 1 equipped with the supply roll FR1 repeatedly performs the various processes for manufacturing one device with respect to the board | substrate P sent out from the supply roll FR1. For this reason, the board | substrate P after a process will be in the state which the some device connected. That is, the board | substrate P sent out from the supply roll FR1 becomes a board | substrate for obtaining a multiface. Moreover, the board | substrate P has imprinted the fine partition wall structure (concave-convex structure) for modifying the surface by predetermined preprocessing previously, or activating the surface, or for fine patterning on the surface. It may be formed by (imprint law) or the like.

The board | substrate P after a process is collect | recovered as a roll FR2 for collection | recovery by winding in roll shape. The recovery roll FR2 is attached to a dicing apparatus (not shown). The dicing apparatus equipped with the collection roll FR2 sets a plurality of devices by dividing (dicing) the substrate P after the processing for each device. The dimension of the board | substrate P is about 10 cm-about 2m in the width direction (direction to become short), for example, and the dimension of the longitudinal direction (direction to become long) is 10 m or more. . In addition, the dimension of the board | substrate P is not limited to said dimension.

In FIG. 1, it is a rectangular coordinate system which a X direction, a Y direction, and a Z direction orthogonally cross. X direction is a direction which connects the supply roll FR1 and the collection roll FR2 in a horizontal plane, and is a left-right direction in FIG. The Y direction is a direction orthogonal to the X direction in the horizontal plane, and is the front-rear direction in FIG. 1. The Y direction is an axial direction of the supply roll FR1 and the recovery roll FR2. Z direction is a vertical direction and is an up-down direction in FIG.

The device manufacturing system 1 is a processing apparatus U1-Un which performs various processes with respect to the board | substrate supply apparatus 2 which supplies the board | substrate P, and the board | substrate P supplied by the board | substrate supply apparatus 2. ), A substrate recovery device 4 for recovering the substrate P processed by the processing devices U1 to Un, and an upper control device for controlling each device of the device manufacturing system 1 ( 5).

The supply roll FR1 is rotatably attached to the board | substrate supply apparatus 2. The board | substrate supply apparatus 2 has the edge position which adjusts the position in the width direction (Y direction) of the drive roller R1 which sends the board | substrate P from the attached supply roll FR1, and the board | substrate P. It has a controller EPC1. The drive roller R1 rotates while sandwiching both front and back sides of the substrate P, and sends the substrate P in the conveying direction from the supply roll FR1 to the recovery roll FR2, thereby providing a substrate. (P) is supplied to the processing apparatus U1-Un. At this time, the edge position controller EPC1 moves the board | substrate P so that the position in the width | variety edge part (edge) of the board | substrate P may be in the range of +/- 10 micrometers-about several tens of micrometers with respect to a target position. By moving in the width direction, the position in the width direction of the substrate P is corrected.

The recovery roll FR2 is rotatably mounted to the substrate recovery device 4. The board | substrate collection | recovery apparatus 4 is an edge position which adjusts the position in the width direction (Y direction) of the drive roller R2 which pulls the processed board | substrate P after a process to the recovery roll FR2 side, and the board | substrate P. It has a controller EPC2. The board | substrate collection | recovery apparatus 4 rotates, holding both sides of the front and back of the board | substrate P by the drive roller R2, and pulls the board | substrate P to a conveyance direction, and collect | recovers the roll FR2. By rotating, the substrate P is wound up. At this time, the edge position controller EPC2 is configured similarly to the edge position controller EPC1 and is disposed in the width direction of the substrate P so that the end portion (edge) in the width direction of the substrate P is not disturbed in the width direction. Correct the position of.

The processing apparatus U1 is a coating apparatus which applies a photosensitive functional liquid to the surface of the board | substrate P supplied from the board | substrate supply apparatus 2. As the photosensitive functional liquid, for example, a photoresist, a photosensitive silane coupling material (for example, a photosensitive lipophilic modifier, a photosensitive plating reducing material, and the like), a UV curable resin solution, and the like are used. The processing apparatus U1 is provided with the coating mechanism Gp1 and the drying mechanism Gp2 in order from the upstream side of the conveyance direction of the board | substrate P. FIG. The coating mechanism Gp1 has the cylinder roller DR1 by which the board | substrate P is wound, and the application roller DR2 which opposes the cylinder roller DR1. The coating mechanism Gp1 sandwiches and holds the board | substrate P by the cylinder roller DR1 and the coating roller DR2 in the state which wound the supplied board | substrate P on the cylinder roller DR1. And application | coating mechanism Gp1 apply | coats the photosensitive functional liquid with application | coating roller DR2, moving the board | substrate P to a conveyance direction by rotating cylinder roller DR1 and application | coating roller DR2. The drying mechanism Gp2 blows out drying air such as hot air or dry air, removes the solute (solvent or water) contained in the photosensitive functional liquid, and dries the substrate P coated with the photosensitive functional liquid. A photosensitive functional layer is formed on (P).

The processing apparatus U2 moves the board | substrate P conveyed from the processing apparatus U1 to predetermined temperature (for example, about 10 to 120 degreeC) so that the photosensitive functional layer formed in the surface of the board | substrate P may be stabilized. It is a heating device to heat. The processing apparatus U2 is provided with the heating chamber HA1 and the cooling chamber HA2 in order from the upstream side of the conveyance direction of the board | substrate P. As shown in FIG. The heating chamber HA1 is provided with the some roller and the some air turn bar inside, and the some roller and the some air turn bar comprise the conveyance path | route of the board | substrate P. As shown in FIG. The plurality of rollers are provided by rolling in contact with the back surface side of the substrate P, and the plurality of air turn bars are provided in a non-contact state on the surface side of the substrate P. FIG. The plurality of rollers and the plurality of air turn bars are arranged to form a meandering conveyance path so as to lengthen the conveyance path of the substrate P. As shown in FIG. The board | substrate P passing through the heating chamber HA1 is heated to predetermined temperature, conveying along a meandering conveyance path | route. The cooling chamber HA2 cools the board | substrate P to environmental temperature so that the temperature of the board | substrate P heated by the heating chamber HA1 may match the environmental temperature of a post process (processing apparatus U3). In the cooling chamber HA2, a plurality of rollers are provided therein, and the plurality of rollers are arranged in a meandering conveying path so as to lengthen the conveying path of the substrate P, similarly to the heating chamber HA1. It is. The board | substrate P passing through the cooling chamber HA2 is cooled, conveying along a meandering conveyance path | route. On the downstream side in the conveyance direction of the cooling chamber HA2, the drive roller R3 is provided, and the drive roller R3 rotates while holding the board | substrate P which passed through the cooling chamber HA2, and is rotated, The board | substrate P is supplied toward the processing apparatus U3.

The processing apparatus (substrate processing apparatus) U3 projects and exposes a pattern such as a display circuit or a wiring with respect to the substrate (photosensitive substrate) P supplied with the photosensitive functional layer on the surface supplied from the processing apparatus U2. It is an exposure apparatus. Although details will be described later, the processing apparatus U3 illuminates the illumination light flux on the reflective mask M, and projects and exposes the projection light flux obtained by reflecting the illumination light flux by the mask M onto the substrate P. FIG. The processing apparatus U3 adjusts the position in the width direction (Y direction) of the drive roller DR4 and the board | substrate P which send the board | substrate P supplied from the processing apparatus U2 to the downstream side of a conveyance direction. It has an edge position controller (EPC3). The driving roller DR4 rotates while sandwiching both front and back sides of the substrate P, and sends the substrate P to the downstream side in the conveying direction, thereby rotating the drum DR5 supporting the substrate P at the exposure position. To the feed. Edge position controller EPC3 is comprised similarly to edge position controller EPC1, and corrects the position in the width direction of board | substrate P so that the width direction of board | substrate P at an exposure position may become a target position. . Moreover, the processing apparatus U3 has two sets of drive rollers DR6 and DR7 which send the board | substrate P to the downstream side of a conveyance direction, in the state which gave the board | substrate P after exposure. Two sets of drive rollers DR6 and DR7 are arrange | positioned at predetermined conveyance in the conveyance direction of the board | substrate P. FIG. The driving roller DR6 clamps and rotates the upstream side of the board | substrate P to be conveyed, and the driving roller DR7 clamps and rotates the downstream side of the board | substrate P to be conveyed, and rotates it, The substrate P is supplied toward the processing apparatus U4. At this time, since the sagging of the board | substrate P is provided, it can absorb the fluctuation | variation of the conveyance speed which generate | occur | produces on the downstream side of a conveyance direction rather than the drive roller DR7, and the board | substrate P by the fluctuation of a conveyance speed It is possible to insulate the influence of the exposure treatment on the substrate. Moreover, in the processing apparatus U3, the alignment mark etc. previously formed in the board | substrate P, etc. in order to relatively position (align) the image of a part of the mask pattern of the mask M, and the board | substrate P. Alignment microscopes AM1 and AM2 which detect this are provided.

The processing apparatus U4 is a wet processing apparatus which performs the developing process by a wet process, an electroless plating process, etc. with respect to the board | substrate P after exposure conveyed from the processing apparatus U3. The processing apparatus U4 has three processing tanks BT1, BT2, and BT3 layered in the vertical direction (Z direction) inside, and the some roller which conveys the board | substrate P inside. The some roller is arrange | positioned so that the inside of three process tanks BT1, BT2, and BT3 may become the conveyance path which the board | substrate P passes in order. On the downstream side in the conveyance direction of the processing tank BT3, a driving roller is provided, and the driving roller DR8 rotates while sandwiching the board | substrate P which passed through the processing tank BT3, and board | substrate P ) Is supplied toward the processing apparatus U5.

Although illustration is abbreviate | omitted, the processing apparatus U5 is a drying apparatus which dries the board | substrate P conveyed from the processing apparatus U4. The processing apparatus U5 removes the droplet which adheres to the board | substrate P wet-processed by the processing apparatus U4, and adjusts the moisture content of the board | substrate P. FIG. The board | substrate P dried by the processing apparatus U5 is conveyed to processing apparatus Un through some processing apparatus further. And after processing by the processing apparatus Un, the board | substrate P is wound up by the collection roll FR2 of the board | substrate collection | recovery apparatus 4.

The host controller 5 collectively controls the substrate supply device 2, the substrate recovery device 4, and the plurality of processing devices U1 to Un. The upper level control apparatus 5 controls the board | substrate supply apparatus 2 and the board | substrate collection | recovery apparatus 4, and conveys the board | substrate P toward the board | substrate collection apparatus 4 from the board | substrate supply apparatus 2. In addition, the host controller 5 controls the plurality of processing apparatuses U1 to Un to execute various processes for the substrate P while synchronizing with the transfer of the substrate P. FIG.

<Exposure apparatus (substrate processing apparatus)>

Next, the structure of the exposure apparatus (substrate processing apparatus) as the processing apparatus U3 of 1st Embodiment is demonstrated with reference to FIGS. FIG. 2 is a diagram illustrating an entire configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment. 3 is a diagram illustrating an arrangement of an illumination region and a projection region of the exposure apparatus shown in FIG. 2. 4 is a diagram illustrating the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in FIG. 2. Fig. 5 is a diagram showing the state of the illumination light beam irradiated to the mask and the projection light beam emitted from the mask. It is a figure which shows typically the advancing direction of the illumination light beam and projection light beam in the polarization beam splitter in FIG. Hereinafter, the processing apparatus U3 is called exposure apparatus U3.

The exposure apparatus U3 shown in FIG. 2 is what is called a scanning exposure apparatus, and the board | substrate (image) of the mask pattern formed in the outer peripheral surface of the cylindrical mask M is conveyed, conveying the board | substrate P to a conveyance direction. Projection exposure is performed on the surface of P). In addition, in FIG. 2, the X direction, the Y direction, and the Z direction orthogonally cross, and it is set as the rectangular coordinate system similar to FIG.

First, the mask M used for the exposure apparatus U3 is demonstrated. The mask M is, for example, a reflective mask using a metal cylindrical body. The mask M is formed in the cylindrical body which has the outer peripheral surface (circumferential surface) used as the radius of curvature Rm centering on the 1st axis | shaft AX1 extending in a Y direction. The peripheral surface of the mask M is the mask surface P1 in which the predetermined | prescribed mask pattern was formed. The mask surface P1 includes a high reflection portion that reflects light fluxes in a predetermined direction with high efficiency and a reflection suppression portion that does not reflect light fluxes in a predetermined direction or reflects at low efficiency. The mask pattern is formed by the high reflection part and the reflection suppression part. In this case, the reflection suppressing unit may be configured to reduce the light reflected in the predetermined direction. For this reason, the reflection suppressing portion may absorb light, transmit light, or reflect (for example, diffuse reflection) outside the predetermined direction. Here, the mask M can be comprised from the material which absorbs light, or the material which transmits light. As the mask M having the above configuration, the exposure apparatus U3 can use a mask made of a cylindrical body made of metal such as aluminum or SUS. For this reason, exposure apparatus U3 can perform exposure using a cheap mask.

In the mask M, all or part of the panel pattern corresponding to one display device may be formed, or the panel pattern corresponding to the plurality of display devices may be formed. In addition, the mask M may be formed in a plurality of patterns for the panel repeatedly in the circumferential direction around the first axis AX1, and the small pattern for the panel may be repeated in the direction parallel to the first axis AX1. A plurality may be formed. In addition, the mask M may be provided with a panel pattern of the first display device and a panel pattern of a second display device having a different size from the first display device. Moreover, the mask M should just have the peripheral surface used as the radius of curvature Rm centering on the 1st axis | shaft AX1, and is not limited to the shape of a cylindrical body. For example, the mask M may be an arc-shaped plate having a circumferential surface. Moreover, the mask M may be a thin plate shape, and may be made to have a circumferential surface by making the thin mask M curved.

Next, the exposure apparatus U3 shown in FIG. 2 is demonstrated. The exposure apparatus U3 includes the mask holding mechanism 11 and the substrate in addition to the above-described driving rollers DR4, DR6, DR7, the rotating drum DR5, the edge position controller EPC3, and the alignment microscopes AM1, AM2. The support mechanism 12, the illumination optical system IL, the projection optical system PL, and the lower control apparatus 16 are provided. The exposure apparatus U3 supports the illumination light emitted from the light source device 13 by the mask holding mechanism 11 via a part of the illumination optical system IL and the projection optical system PL. The substrate support mechanism 12 via the projection optical system PL to the projection light beam (image light) irradiated to the pattern surface P1 of the mask M and reflected from the pattern surface P1 of the mask M through the projection optical system PL. Project onto the substrate P supported by the &lt; RTI ID = 0.0 &gt;

The lower control unit 16 controls each unit of the exposure apparatus U3 and causes each unit to execute a process. The lower control device 16 may be part or all of the upper control device 5 of the device manufacturing system 1. Moreover, the lower control apparatus 16 is controlled by the upper control apparatus 5, and the apparatus separate from the upper control apparatus 5 may be sufficient. The lower control apparatus 16 includes a computer, for example.

The mask holding mechanism 11 has a cylindrical drum (also referred to as a 'mask holding drum') 21 for holding the mask M, and a first drive portion 22 for rotating the cylindrical drum 21. The cylindrical drum 21 holds the mask M so that the 1st axis AX1 of the mask M becomes a rotation center. The 1st drive part 22 is connected to the lower control apparatus 16, and rotates the cylindrical drum 21 about the 1st axis | shaft AX1 about a rotation center.

Moreover, although the cylindrical drum 21 of the mask holding mechanism 11 directly formed the mask pattern by the high reflection part and the low reflection part in the outer peripheral surface, it is not limited to this structure. The cylindrical drum 21 as the mask holding mechanism 11 may wind and hold a thin plate-shaped reflective mask M along its outer circumferential surface. The cylindrical drum 21 serving as the mask holding mechanism 11 may be detachably held on the outer circumferential surface of the cylindrical drum 21 in a plate-shaped reflective mask M that has been previously curved in an arc shape with a radius Rm.

The substrate support mechanism 12 includes a substrate support drum 25 (rotating drum DR5 in FIG. 1) for supporting the substrate P, a second drive unit 26 for rotating the substrate support drum 25, It has a pair of air turn bars ATB1 and ATB2 and a pair of guide rollers 27 and 28. The board | substrate supporting drum 25 is formed in the cylindrical shape which has the outer peripheral surface (circumferential surface) used as the curvature radius Rp centering on the 2nd axis AX2 extending in a Y direction. Here, the 1st axis | shaft AX1 and the 2nd axis | shaft AX2 are parallel to each other, and the surface which passes through the 1st axis | shaft AX1 and the 2nd axis | shaft AX2 is made into the center plane CL. A part of the circumferential surface of the board | substrate support drum 25 becomes the support surface P2 which supports the board | substrate P. As shown in FIG. That is, the board | substrate supporting drum 25 winds and supports the board | substrate P to cylindrical shape by winding the board | substrate P on the support surface P2. The 2nd drive part 26 is connected to the lower control apparatus 16, and rotates the board | substrate support drum 25 about the 2nd axis AX2 to the rotation center. The pair of air turn bars ATB1 and ATB2 and the pair of guide rollers 27 and 28 sandwich the substrate supporting drum 25 on the upstream and downstream sides of the conveying direction of the substrate P, respectively. It is prepared. The guide roller 27 guides the board | substrate P conveyed from the drive roller DR4 to the board | substrate support drum 25 via the air turn bar ATB1, and the guide roller 28 is a board | substrate support drum ( The board | substrate P conveyed from the air turn bar ATB2 via 25 is guide | induced to the drive roller DR6.

The board | substrate support mechanism 12 rotates the board | substrate support drum 25 by the 2nd drive part 26, and the board | substrate P introduce | transduced into the board | substrate support drum 25 is the support surface of the board | substrate support drum 25. While supporting at (P2), it is sent in the long direction (X direction) at a predetermined speed.

At this time, the lower control apparatus 16 connected to the 1st drive part 22 and the 2nd drive part 26 rotates the cylindrical drum 21 and the board | substrate supporting drum 25 synchronously by predetermined rotational speed ratio. The image of the mask pattern formed on the mask surface P1 of the mask M is continuous on the surface (surface curved along the circumferential surface) of the substrate P wound around the support surface P2 of the substrate support drum 25. The projection exposure is repeated. In exposure apparatus U3, the 1st drive part 22 and the 2nd drive part 26 become the moving mechanism of this embodiment.

The light source device 13 emits the illumination light beam EL1 illuminated by the mask M. As shown in FIG. The light source device 13 has a light source 31 and a light guide member 32. The light source 31 is a light source that emits light of a predetermined wavelength. The light source 31 is, for example, a lamp light source such as a mercury lamp, a laser diode, a light emitting diode (LED), or the like. The illumination light emitted from the light source 31 is, for example, bright rays (g-ray, h-ray, i-ray) emitted from the lamp light source, far ultraviolet light (DUV light) such as KrF excimer laser light (wavelength 248 nm), and ArF excimer laser. Light (wavelength 193 nm) and the like. Here, it is preferable that the light source 31 emits the illumination light beam EL1 containing the wavelength shorter than i line | wire (wavelength of 365 nm). As such illumination beam EL1, laser light (wavelength of 355 nm) emitted from YAG laser (third harmonic laser), laser light (wavelength of 266 nm) emitted from YAG laser (fourth harmonic laser), or KrF excimer laser Laser light emitted from the light (wavelength of 248 nm) and the like can be used.

The light guide member 32 guides the illumination light beam EL1 radiate | emitted from the light source 31 to illumination optical system IL. The light guide member 32 is comprised from the optical fiber or the relay module using a mirror. In addition, when the illumination optical system IL is provided with two or more illumination optical systems IL, the light guide member 32 divides the illumination light beam EL1 from the light source 31 into several, and divides the several illumination light beam EL1 into the several illumination optical system ( IL). The light guide member 32 of this embodiment injects the illumination light beam EL1 emitted from the light source 31 into polarization beam splitter PBS as light of a predetermined polarization state. The polarizing beam splitter PBS is provided between the mask M and the projection optical system PL in order to illuminate the mask M, and reflects the light beam that becomes the linearly polarized light of the S polarization, and the P polarization is performed. The light beam that becomes the linearly polarized light is transmitted. For this reason, the light source device 13 emits the illumination light beam EL1 in which the illumination light beam EL1 incident on the polarization beam splitter PBS becomes the light beam of linearly polarized light (S polarization). The light source device 13 emits a polarization laser whose wavelength and phase coincide with the polarization beam splitter PBS. For example, when the light beam emitted from the light source 31 is polarized light, the light source device 13 uses the polarization surface holding fiber as the light guide member 32 from the light source device 13. The light guide is conducted while maintaining the polarization state of the output laser light. For example, you may guide the light beam output from the light source 31 to an optical fiber, and may polarize the light output from the optical fiber with a polarizing plate. That is, the light source device 13 may polarize the light beam of random polarization with a polarizing plate, when the light beam of random polarization is guided. The light source device 13 may guide the luminous flux output from the light source 31 by a relay optical system using a lens or the like.

Here, as shown in FIG. 3, the exposure apparatus U3 of 1st Embodiment is the exposure apparatus which assumed what is called a multi-lens system. 3, the top view (left figure of FIG. 3) which looked at illumination region IR on the mask M hold | maintained by the cylindrical drum 21 from -Z side, and the board | substrate supported by the board | substrate support drum 25 is shown. The top view (right figure of FIG. 3) which looked at projection area PA on (P) from + Z side is shown. 3, the code | symbol Xs shows the moving direction (rotation direction) of the cylindrical drum 21 and the board | substrate supporting drum 25. As shown in FIG. The exposure apparatus U3 of the multi-lens system illuminates the illumination light beam EL1 to the illumination area | regions IR1-IR6 of the plurality (for example, six in 1st embodiment) on the mask M, respectively, and each illumination The plurality of projection light beams EL2 obtained by reflecting the light beams EL1 to the respective illumination regions IR1 to IR6 are projected areas PA1 to plural (for example, six in the first embodiment) on the substrate P. Projection exposure to PA6).

First, the some illumination area | regions IR1-IR6 illuminated by illumination optical system IL are demonstrated. As shown in FIG. 3, the some illumination area | regions IR1-IR6 are 1st illumination area | region IR1, 3rd on the mask M of the upstream side of a rotation direction with the center surface CL in between. Illumination area IR3 and 5th illumination area IR5 are arrange | positioned, and 2nd illumination area | region IR2, 4th illumination area | region IR4, and 6th illumination area | region on the mask M of the downstream side of a rotation direction ( IR6) is placed. Each illumination area | region IR1-IR6 becomes an elongate trapezoidal area | region which has parallel short side and long side extended in the axial direction (Y direction) of the mask M. As shown to FIG. At this time, each of the trapezoidal illumination regions IR1 to IR6 is a region where the short side is located on the center plane CL side and the long side is located on the outside. The 1st illumination area | region IR1, the 3rd illumination area | region IR3, and the 5th illumination area | region IR5 are arrange | positioned at predetermined intervals in the axial direction. Moreover, 2nd illumination area | region IR2, 4th illumination area | region IR4, and 6th illumination area | region IR6 are arrange | positioned at the axial direction at predetermined intervals. At this time, 2nd illumination area | region IR2 is arrange | positioned between 1st illumination area | region IR1 and 3rd illumination area | region IR3 in an axial direction. Similarly, 3rd illumination area | region IR3 is arrange | positioned between 2nd illumination area | region IR2 and 4th illumination area | region IR4 in an axial direction. 4th illumination area | region IR4 is arrange | positioned between 3rd illumination area | region IR3 and 5th illumination area | region IR5 in an axial direction. 5th illumination area | region IR5 is arrange | positioned between 4th illumination area | region IR4 and 6th illumination area | region IR6 in an axial direction. When each illumination area | region IR1-IR6 rotates the triangular parts of the quadrilateral parts of the trapezoidal illumination area | region adjacent to each other in the Y direction rotated in the circumferential direction (X direction) of the mask M, It is arrange | positioned so that they may overlap (overlap). In addition, in 1st Embodiment, although each illumination area | region IR1-IR6 was made into the trapezoidal area | region, you may be a rectangular area | region.

Moreover, the mask M has the pattern formation area | region A3 in which the mask pattern is formed, and the pattern non-formation area | region A4 in which the mask pattern is not formed. The pattern non-formation area | region A4 is an area which is hard to reflect which absorbs illumination light beam EL1, and is arrange | positioned surrounding the pattern formation area | region A3 in frame shape. The 1st-6th illumination area | regions IR1-IR6 are arrange | positioned so that the full width of the Y direction of the pattern formation area | region A3 may be covered.

The illumination optical system IL is provided in plurality (for example, six pieces in 1st Embodiment) along some illumination area | regions IR1-IR6. Illumination light beam EL1 from the light source device 13 injects into some illumination optical system (division illumination optical system) IL1-IL6, respectively. Each illumination optical system IL1-IL6 guides each illumination light beam EL1 incident from the light source device 13 to each illumination region IR1-IR6, respectively. That is, the 1st illumination optical system IL1 guides illumination light beam EL1 to 1st illumination area | region IR1, and similarly, 2nd-6th illumination optical systems IL2-IL6 guide illumination light beam EL1. Guide to the second to sixth illumination regions IR2 to IR6. The plurality of illumination optical systems IL1 to IL6 are disposed on the side (left side in FIG. 2) where the first, third, and fifth illumination regions IR1, IR3, IR5 are disposed with the center plane CL interposed therebetween. The 1st illumination optical system IL1, the 3rd illumination optical system IL3, and the 5th illumination optical system IL5 are arrange | positioned. The 1st illumination optical system IL1, the 3rd illumination optical system IL3, and the 5th illumination optical system IL5 are arrange | positioned at the Y direction at predetermined intervals. Moreover, the some illumination optical system IL1-IL6 is the side (right side of FIG. 2) in which 2nd, 4th, 6th illumination area | region IR2, IR4, IR6 is arrange | positioned with the center plane CL in between. 2nd illumination optical system IL2, 4th illumination optical system IL4, and 6th illumination optical system IL6 are arrange | positioned at this. 2nd illumination optical system IL2, 4th illumination optical system IL4, and 6th illumination optical system IL6 are arrange | positioned at the Y direction at predetermined intervals. At this time, 2nd illumination optical system IL2 is arrange | positioned between 1st illumination optical system IL1 and 3rd illumination optical system IL3 in an axial direction. Similarly, 3rd illumination optical system IL3, 4th illumination optical system IL4, and 5th illumination optical system IL5 are made between the 2nd illumination optical system IL2 and 4th illumination optical system IL4 in an axial direction, and It is arrange | positioned between 3rd illumination optical system IL3 and 5th illumination optical system IL5, and 4th illumination optical system IL4 and 6th illumination optical system IL6. Moreover, 1st illumination optical system IL1, 3rd illumination optical system IL3, and 5th illumination optical system IL5, 2nd illumination optical system IL2, 4th illumination optical system IL4, and 6th illumination optical system IL6. Are arranged symmetrically from the Y direction.

Next, with reference to FIG. 4, each illumination optical system IL1-IL6 is demonstrated. In addition, since each illumination optical system IL1-IL6 has the same structure, 1st illumination optical system IL1 (henceforth simply called "lighting optical system IL") is demonstrated as an example.

The illumination optical system IL uses the illumination light beam EL1 from the light source device 13 to illuminate the illumination area IR (first illumination area IR1) with uniform illuminance (illumination area on the mask M). Kohler illumination on IR). Moreover, illumination optical system IL is a fall illumination system using polarizing beam splitter PBS. The illumination optical system IL sequentially illuminates the illumination optical module ILM, the polarizing beam splitter PBS, and the quarter wave plate 41 from the incident side of the illumination light beam EL1 from the light source device 13. Has

As shown in FIG. 4, the illumination optical module ILM comprises a collimator lens 51, a fly-eye lens 52, a plurality of condenser lenses 53, and a sequence from an incident side of the illumination light beam EL1. , The cylindrical lens 54, the illumination field stop 55, and the plurality of relay lenses 56 are provided on the first optical axis BX1.

The collimator lens 51 enters the light exiting from the light guide member 32 and irradiates the entire surface on the incident side of the fly's eye lens 52.

The fly's eye lens 52 is provided on the emission side of the collimator lens 51. The center of the surface on the emission side of the fly's eye lens 52 is disposed on the first optical axis BX1. The fly's eye lens 52 generates a surface light source image obtained by dividing the illumination light beam EL1 from the collimator lens 51 into a plurality of point light source images. The illumination light beam EL1 is generated from the surface light source. At this time, the surface on the exit side of the fly's eye lens 52 in which the point light source image is generated is the first concave surface of the projection optical system PL which will be described later from the fly's eye lens 52 via the illumination field stop 55. By the various lenses reaching the mirror 72, it is arrange | positioned so that it may be optically conjugate with the pupil plane in which the reflective surface of the 1st concave mirror 72 is located.

The condenser lens 53 is provided on the emission side of the fly's eye lens 52. The optical axis of the condenser lens 53 is disposed on the first optical axis BX1. The condenser lens 53 superimposes the light from each of the plurality of point light sources formed on the exit side of the fly's eye lens 52 on the illumination field stop 55 and illuminates the illumination field stop with a uniform illuminance distribution. Investigate. The illumination field stop 55 has a trapezoidal or rectangular rectangular opening that is similar to the illumination region IR shown in FIG. 3, and the center of the opening is disposed on the first optical axis BX1. The opening of the illumination field stop 55 is formed by the relay lens 56, the polarization beam splitter PBS, and the quarter wave plate 41 provided in the optical path from the illumination field stop 55 to the mask M. It is arranged in an optically conjugate relationship with the illumination region IR on the mask M. The relay lens 56 causes the illumination light beam EL1 transmitted through the opening of the illumination field stop 55 to enter the polarizing beam splitter PBS. Cylindrical lens 54 is provided at the position adjacent to the illumination field stop 55 as the exit side of the condenser lens 53. The cylindrical lens 54 is a flat convex cylindrical lens in which the incidence side becomes a plane and the exit side is a convex cylindrical lens surface. As for the cylindrical lens 54, the optical axis of the cylindrical lens 54 is arrange | positioned on the 1st optical axis BX1. The cylindrical lens 54 converges the chief rays of the illumination light beam EL1 irradiating the illumination region IR on the mask M in the XZ plane, and sets them in parallel with respect to the Y direction.

Polarizing beam splitter PBS is arrange | positioned between illumination optical module ILM and center plane CL. Polarizing beam splitter PBS reflects the light beam used as linearly polarized light of S polarization on a wavefront division surface, and transmits the light beam used as linearly polarized light of P polarized light. Here, when the illumination light flux EL1 incident on the polarization beam splitter PBS is linearly polarized light of S polarization, the illumination light flux EL1 is reflected at the wavefront dividing surface of the polarization beam splitter PBS, and the quarter wave plate is used. It penetrates 41, becomes circularly polarized light, and irradiates the illumination area IR on the mask M. As shown in FIG. The projection light beam EL2 reflected by the illumination region IR on the mask M is converted from circularly polarized light to linear P polarized light by passing through the quarter wave plate 41 again, and is a polarized beam splitter PBS. Passes through the wavefront dividing plane and faces the projection optical system PL. It is preferable that the polarization beam splitter PBS reflects most of the illumination light beam EL1 incident on the wavefront dividing surface, and transmits most of the projection light beam EL2. Although the polarization splitting characteristic in the wavefront splitting surface of the polarizing beam splitter PBS is represented by the extinction ratio, the extinction ratio is also changed by the angle of incidence of the light beams directed to the wavefront splitting surface. In order that the influence on the imaging performance does not become a problem, it is designed in consideration of the NA (the number of openings) of the illumination light beam EL1 and the projection light beam EL2.

FIG. 5 shows the behavior of the illumination light beam EL1 irradiated to the illumination region IR on the mask M and the projection light flux EL2 reflected from the illumination region IR in the XZ plane (first axis AX1). Is an exaggerated view in the plane perpendicular to the plane. As shown in FIG. 5, the said illumination optical system IL is made so that the chief ray of the projection light beam EL2 reflected by the illumination area | region IR of the mask M may become telecentric (parallel system). The main light ray of the illumination light beam EL1 irradiated to the illumination region IR of the mask M is intentionally non-telecentric in the XZ plane (surface perpendicular to the axis AX1), and the YZ plane. (In parallel with the center surface CL), it will be telecentric. Such characteristics of the illumination light beam EL1 are imparted by the cylindrical lens 54 shown in FIG. 4. Specifically, a line passing through the point Q1 in the circumferential direction of the illumination region IR on the mask surface P1 toward the first axis AX1 and a circle of 1/2 of the radius Rm of the mask surface P1. When the intersection point Q2 is set, the curvature of the convex cylindrical lens surface of the cylindrical lens 54 so that each chief ray of the illumination light beam EL1 passing through the illumination region IR faces the intersection Q2 on the XZ plane. Set. In this way, each chief ray of the projection light beam EL2 reflected in the illumination region IR is parallel to the straight line passing through the first axis AX1, the point Q1 and the intersection Q2 in the XZ plane (telecentric). It is in a state.

Next, the some projection area | region (exposure area | region) PA1-PA6 exposed by projection by the projection optical system PL is demonstrated. As shown in FIG. 3, the some projection area | region PA1-PA6 on the board | substrate P is arrange | positioned in correspondence with the some illumination area | region IR1-IR6 on the mask M. As shown in FIG. That is, the some projection area | region PA1-PA6 on the board | substrate P has 1st projection area | region PA1, 3rd on the board | substrate P of the upstream of a conveyance direction across the center surface CL. Projection area PA3 and 5th projection area PA5 are arrange | positioned, and 2nd projection area | region PA2, 4th projection area | region PA4, and 6th projection area | region on the board | substrate P of the downstream side of a conveyance direction ( PA6) is deployed. Each projection area | region PA1-PA6 becomes an elongate trapezoidal shape (rectangular shape) which has the short side and long side extended in the width direction (Y direction) of the board | substrate P. As shown in FIG. At this time, in each projection area | region PA1-PA6 of trapezoid shape, the short side is located in the center plane CL side, and the long side is an area | region located outside. 1st projection area | region PA1, 3rd projection area | region PA3, and 5th projection area | region PA5 are arrange | positioned at the width direction at predetermined intervals. Moreover, 2nd projection area | region PA2, 4th projection area | region PA4, and 6th projection area | region PA6 are arrange | positioned at the width direction at predetermined intervals. At this time, 2nd projection area | region PA2 is arrange | positioned between 1st projection area | region PA1 and 3rd projection area | region PA3 in an axial direction. Similarly, 3rd projection area | region PA3 is arrange | positioned between 2nd projection area | region PA2 and 4th projection area | region PA4 in an axial direction. 4th projection area | region PA4 is arrange | positioned between 3rd projection area | region PA3 and 5th projection area | region PA5 in an axial direction. 5th projection area | region PA5 is arrange | positioned between 4th projection area | region PA4 and 6th projection area | region PA6 in an axial direction. Each projection area | region PA1-PA6 has a board | substrate with the triangular parts of the quadrangle | part of the trapezoidal projection area | region PA mutually adjacent to each other in the Y direction similarly to each illumination area | region IR1-IR6. It arrange | positions so that it may overlap (overlap) with respect to the conveyance direction of (P). At this time, the projection area PA has a shape in which the exposure amounts in the overlapping areas of the adjacent projection areas PA are substantially the same as the exposure amounts in the non-overlapping areas. And 1st-6th projection area | regions PA1-PA6 are arrange | positioned so that the whole width | variety of the Y direction of exposure area | region A7 exposed on the board | substrate P may be covered.

Here, in FIG. 2, when viewed in the XZ plane, the circumferential length from the center point of the illumination region IR1 (and IR3, IR5) on the mask M to the center point of the illumination region IR2 (and IR4, IR6) is Substantially the same as the circumferential length from the center point of the projection area PA1 (and PA3, PA5) on the substrate P along the support surface P2 to the center point of the second projection area PA2 (and PA4, PA6) Is set to

The projection optical system PL is provided in plurality (for example, six in the first embodiment) along the plurality of projection regions PA1 to PA6. The plurality of projection light beams EL2 reflected from the plurality of illumination regions IR1 to IR6 enter the plurality of projection optical systems (split projection optical systems) PL1 to PL6, respectively. Each projection optical system PL1-PL6 guides each projection light beam EL2 reflected by the mask M to each projection area | region PA1-PA6, respectively. That is, the first projection optical system PL1 guides the projection light beam EL2 from the first illumination region IR1 to the first projection region PA1, and similarly, the second to sixth projection optical systems PL2 to PL6. ) Guides each projection light beam EL2 from the second to sixth illumination regions IR2 to IR6 to the second to sixth projection regions PA2 to PA6. The plurality of projection optical systems PL1 to PL6 are disposed on the side (left side in FIG. 2) where the first, third, and fifth projection regions PA1, PA3, and PA5 are disposed with the center plane CL interposed therebetween. The 1st projection optical system PL1, the 3rd projection optical system PL3, and the 5th projection optical system PL5 are arrange | positioned. The 1st projection optical system PL1, the 3rd projection optical system PL3, and the 5th projection optical system PL5 are arrange | positioned at the Y direction at predetermined intervals. Moreover, the some projection optical system PL1-PL6 has the side where the 2nd, 4th, 6th projection area | region PA2, PA4, PA6 is arrange | positioned with the center plane CL in between (right side of FIG. 2). The 2nd projection optical system PL2, the 4th projection optical system PL4, and the 6th projection optical system PL6 are arrange | positioned. 2nd projection optical system PL2, 4th projection optical system PL4, and 6th projection optical system PL6 are arrange | positioned at the Y direction at predetermined intervals. At this time, the second projection optical system PL2 is disposed between the first projection optical system PL1 and the third projection optical system PL3 in the axial direction. Similarly, 3rd projection optical system PL3, 4th projection optical system PL4, and 5th projection optical system PL5 are made between the 2nd projection optical system PL2 and 4th projection optical system PL4 in an axial direction. It is arrange | positioned between 3rd projection optical system PL3 and 5th projection optical system PL5, and between 4th projection optical system PL4 and 6th projection optical system PL6. Moreover, 1st projection optical system PL1, 3rd projection optical system PL3, and 5th projection optical system PL5, 2nd projection optical system PL2, 4th projection optical system PL4, and 6th projection optical system PL6 Are arranged symmetrically from the Y direction.

Again, with reference to FIG. 4, each projection optical system PL1-PL6 is demonstrated. In addition, since each projection optical system PL1-PL6 has the same structure, the 1st projection optical system PL1 (henceforth simply a "projection optical system PL") is demonstrated as an example.

Projection optical system PL projects the image of the mask pattern in illumination area | region IR (1st illumination area | region IR1) on mask M to projection area | region PA on board | substrate P. FIG. The projection optical system PL is the quarter wave plate 41, the polarization beam splitter PBS, and the projection optical module described above, in order from the incident side of the projection light beam EL2 from the mask M. Has a (PLM).

The quarter wave plate 41 and the polarizing beam splitter PBS are combined with the illumination optical system IL. In other words, the illumination optical system IL and the projection optical system PL share the quarter wave plate 41 and the polarization beam splitter PBS.

As shown in FIG. 7, the projection light beam EL2 reflected in illumination area IR (refer FIG. 3) becomes the telecentric beam in which each principal light became parallel, and the projection optical system PL shown in FIG. ). The projection light beam EL2 that becomes the circularly polarized light reflected by the illumination region IR is converted into linearly polarized light (P polarized light) from circularly polarized light by the quarter wave plate 41, and then to the polarized beam splitter PBS. Enter. The projection light beam EL2 incident on the polarizing beam splitter PBS passes through the polarizing beam splitter PBS and then enters the projection optical module PLM shown in FIG. 4.

As an example, the polarizing beam splitter PBS is formed into a rectangular shape as a whole by joining two prisms (quartz agents) in a triangle in the XZ plane, or by contact holding by optical contact. In order to perform polarization separation efficiently, the bonding surface is formed with a multilayer film containing hafnium oxide and the like. In addition, the surface of the polarizing beam splitter PBS which enters the projection light beam EL2 from the mask M, and the projection light beam EL2 are first half of the first deflection member 70 of the projection optical system PL. The surface emitted toward the slope P3 is set to be perpendicular to the main light beam of the projection light beam EL2. In addition, the surface of the polarizing beam splitter PBS on which the illumination light beam EL1 is incident is set perpendicular to the first optical axis BX1 (see FIG. 4) of the illumination optical system IL. Moreover, when the resistance to the ultraviolet-ray or laser beam by using an adhesive agent is concerned, the bonding surface by the optical contact which does not use an adhesive agent is applied to the bonding surface of polarizing beam splitter PBS.

The projection light beam EL2 reflected by the illumination region IR becomes a telecentric light beam and enters the projection optical system PL. The projection light beam EL2 that becomes the circularly polarized light reflected by the illumination region IR is converted into linearly polarized light (P polarized light) from circularly polarized light by the quarter wave plate 41, and then to the polarized beam splitter PBS. Enter. The projection light beam EL2 incident on the polarizing beam splitter PBS passes through the polarizing beam splitter PBS and then enters the projection optical module PLM.

Projection optical module PLM is provided corresponding to illumination optical module ILM. That is, the projection optical module PLM of the first projection optical system PL1 captures an image of the mask pattern of the first illumination region IR1 illuminated by the illumination optical module ILM of the first illumination optical system IL1, Projection is performed on the first projection area PA1 on the substrate P. FIG. Similarly, the projection optical modules PLM of the second to sixth projection optical systems PL2 to PL6 are second to fifth illuminated by the projection optical modules ILM of the second to sixth illumination optical systems IL2 to IL6. The image of the mask pattern of 6 illumination area | regions IR2-IR6 is projected on 2nd-6th projection area | region PA2-PA6 on the board | substrate P. FIG.

As shown in FIG. 4, the projection optical module PLM is provided to the first optical system 61 and the first optical system 61 for forming an image of the mask pattern in the illumination region IR on the intermediate image surface P7. And a second optical system 62 for reimaging at least a part of the intermediate image formed in the projection area PA of the substrate P, and a projection field stop 63 disposed on the intermediate image surface P7 in which the intermediate image is formed. . The projection optical module PLM includes a focus correction optical member 64, an image shift optical member 65, a magnification correction optical member 66, a rotation correction mechanism 67, and polarization. An adjustment mechanism (polarization adjustment means) 68 is provided.

The 1st optical system 61 and the 2nd optical system 62 are telecentric reflective refractive optical systems which modified the Dyson system, for example. In the first optical system 61, its optical axis (hereinafter referred to as "second optical axis BX2") is substantially perpendicular to the center plane CL. The first optical system 61 includes a first deflection member 70, a first lens group 71, and a first concave mirror 72. The 1st deflection | deviation member 70 is a triangular prism which has the 1st reflective surface P3 and the 2nd reflective surface P4. The first reflection surface P3 reflects the projection light beam EL2 from the polarization beam splitter PBS, and passes the reflected projection light beam EL2 through the first lens group 71 so that the first concave mirror ( 72) is made to enter the surface. The 2nd reflecting surface P4 injects the projection light beam EL2 reflected by the 1st concave mirror 72 through the 1st lens group 71, and projects the incident light beam EL2 which entered the projection sight aperture. It is a surface reflecting toward (63). The first lens group 71 includes various lenses, and the optical axes of the various lenses are disposed on the second optical axis BX2. The 1st concave mirror 72 is arrange | positioned in the pupil plane of the 1st optical system 61, and is set in the relationship which is optically conjugate with many point light source images produced | generated by the fly-eye lens 52. As shown in FIG.

The projection light beam EL2 from the polarizing beam splitter PBS is reflected by the first reflecting surface P3 of the first deflection member 70, and the field of view of the upper half of the first lens group 71 is reflected. Passes through the region and enters the first concave mirror 72. The projection light beam EL2 incident on the first concave mirror 72 is reflected by the first concave mirror 72, and passes through the field of view of the lower half of the first lens group 71. Incident on the second reflecting surface P4 of the first deflection member 70. The projection light beam EL2 incident on the second reflecting surface P4 is reflected by the second reflecting surface P4, passes through the focus correction optical member 64 and the image shifting optical member 65, and projects the projection field of view. It enters into the stop 63.

The projection field stop 63 has an opening that defines the shape of the projection area PA. That is, the shape of the opening of the projection field stop 63 defines the substantial shape of the projection area PA. Therefore, when the shape of the opening of the illumination field stop 55 in the illumination optical system IL is trapezoidal in shape similar to the actual shape of the projection area PA, the projection field stop 63 can be omitted. have.

The 2nd optical system 62 is the same structure as the 1st optical system 61, and is provided symmetrically with the 1st optical system 61 across the intermediate image surface P7. As for the 2nd optical system 62, the optical axis (henceforth "3rd optical axis BX3") is substantially orthogonal with respect to the center plane CL, and is parallel to the 2nd optical axis BX2. The second optical system 62 includes a second deflection member 80, a second lens group 81, and a second concave mirror 82. The second deflection member 80 has a third reflective surface P5 and a fourth reflective surface P6. The third reflecting surface P5 reflects the projection light beam EL2 from the projection field stop 63 and passes the reflected projection light beam EL2 through the second lens group 81 to form a second concave mirror ( 82) is made to enter the surface. The fourth reflecting surface P6 enters the projection light beam EL2 reflected by the second concave mirror 82 through the second lens group 81 and enters the incident projection light beam EL2 into the projection area ( It is a surface reflecting toward PA). The second lens group 81 includes various lenses, and the optical axes of the various lenses are disposed on the third optical axis BX3. The 2nd concave mirror 82 is arrange | positioned in the coplanar surface of the 2nd optical system 62, and is set in the relationship which is optically conjugate with the many point light source image formed on the 1st concave mirror 72. FIG.

The projection light beam EL2 from the projection field stop 63 is reflected by the third reflecting surface P5 of the second deflection member 80, and passes through the field of view of the upper half of the second lens group 81. Is incident on the second concave mirror 82. The projection light beam EL2 incident on the second concave mirror 82 is reflected by the second concave mirror 82, passes through the field of view for the lower half of the second lens group 81, and the second deflection member. It enters into the 4th reflective surface P6 of (80). The projection light beam EL2 incident on the fourth reflection surface P6 is reflected by the fourth reflection surface P6, passes through the magnification correction optical member 66, and is projected onto the projection area PA. Thereby, the image of the mask pattern in illumination area | region IR is projected by equal magnification (x1) to projection area | region PA.

The focus correction optical member 64 is disposed between the first deflection member 70 and the projection field stop 63. The focus correction optical member 64 adjusts the focus state of the image of the mask pattern projected onto the substrate P. FIG. For example, the focus correction optical members 64 overlap two wedge-shaped prisms in opposite directions (opposite directions with respect to the X direction in FIG. 4) so as to form a transparent parallel flat plate as a whole. By sliding this pair of prism in the inclined surface direction without changing the space | interval between the mutually opposing surfaces, the thickness as a parallel flat plate is changed. As a result, the effective optical path length of the first optical system 61 is finely adjusted, and the pint state of the image of the mask pattern formed in the intermediate image surface P7 and the projection area PA is finely adjusted.

The image shift optical member 65 is disposed between the first deflection member 70 and the projection field stop 63. The image shift optical member 65 adjusts the image of the mask pattern projected on the board | substrate P so that a movement within an image surface is possible. The optical member 65 for image shift is comprised from the transparent parallel plate glass which can incline in the XZ plane of FIG. 4, and the transparent parallel plate glass which can incline in the YZ plane of FIG. By adjusting each inclination amount of the two parallel plate glass, the image of the mask pattern formed in intermediate image surface P7 and projection area | region PA can be micro-shifted to a X direction or a Y direction.

The magnification correction optical member 66 is disposed between the second deflection member 80 and the substrate P. As shown in FIG. For example, the magnification correction optical member 66 arranges three concave lenses, convex lenses, and concave lenses coaxially at predetermined intervals, fixes the front and rear concave lenses, and fixes the convex lenses between the optical axes (primary rays). It is configured to move in the direction. Thereby, the image of the mask pattern formed in projection area | region PA is enlarged or reduced isotropically by the minute amount, maintaining a telecentric image formation state. Moreover, the optical axis of the three lens groups which comprise the magnification correction optical member 66 is inclined in XZ plane so that it may become parallel with the principal light ray of projection light beam EL2.

The rotation correction mechanism 67 rotates the 1st deflection member 70 about the axis parallel to Z axis | shaft with an actuator (not shown), for example. This rotation correction mechanism 67 can micro-rotate the image of the mask pattern formed in the intermediate | middle upper surface P7 by the rotation of the 1st deflection member 70 in the intermediate upper surface P7.

The polarization adjustment mechanism 68 rotates the quarter wave plate 41 around an axis orthogonal to the plate surface, and adjusts the polarization direction, for example, by an actuator (not shown). The polarization adjustment mechanism 68 can adjust the illuminance of the projection light beam EL2 projected on the projection area | region PA by rotating the quarter wave plate 41. FIG.

In the projection optical system PL configured as described above, the projection light beam EL2 from the mask M is emitted from the illumination region IR in a telecentric state (states in which the main rays of light are parallel to each other), and 1/4 The light enters the first optical system 61 through the wave plate 41 and the polarizing beam splitter PBS. The projection light beam EL2 incident on the first optical system 61 is reflected by the first reflecting surface (planar mirror) P3 of the first deflection member 70 of the first optical system 61 and is the first lens group. Passed through 71 is reflected by the first concave mirror 72. The projection light beam EL2 reflected by the first concave mirror 72 passes through the first lens group 71 again and is reflected by the second reflecting surface (planar mirror) P4 of the first deflection member 70. Then, it passes through the focus correction optical member 64 and the image shift optical member 65 and enters the projection field stop 63. The projection light beam EL2 which has passed through the projection field stop 63 is reflected by the third reflecting surface (planar mirror) P5 of the second deflection member 80 of the second optical system 62, and the second lens group Passed by 81 is reflected by the second concave mirror 82. The projection light beam EL2 reflected by the second concave mirror 82 passes through the second lens group 81 again and is reflected by the fourth reflecting surface (planar mirror) P6 of the second deflection member 80. And enters the magnification correcting optical member 66. The projection light beam EL2 emitted from the magnification correction optical member 66 enters the projection area PA on the substrate P, and the image of the mask pattern represented in the illumination area IR is equal to the projection area PA. Projected to (× 1).

In the present embodiment, the second reflective surface (planar mirror) P4 of the first deflection member 70 and the third reflective surface (planar mirror) P5 of the second deflection member 80 are the center plane ( Although it is a surface inclined at 45 ° with respect to CL (or optical axes BX2 and BX3), the first reflective surface (planar mirror) P3 and the second deflecting member 80 of the first deflecting member 70. 4th reflective surface (plane mirror) P6 is set to the angle other than 45 degrees with respect to the center surface CL (or optical axis BX2, BX3). The angle α ° (absolute value) with respect to the center plane CL (or the optical axis BX2) of the first reflection surface P3 of the first deflection member 70 is shown in FIG. When the angle formed between the straight line passing through one axis AX1 and the center plane CL is θ °, it is determined in a relation of α ° = 45 ° + θ ° / 2. Similarly, the angle β ° (absolute value) with respect to the center plane CL (or the optical axis BX2) of the fourth reflective surface P6 of the second deflection member 80 is the outer peripheral surface of the substrate support drum 25. Β ° = 45 ° + ε ° / when the angle in the ZX plane between the main beam of the projection light beam EL2 passing through the center point in the projection area PA in the circumferential direction and the center plane CL is ε ° It is decided by two people. Moreover, angle (epsilon) is a structural dimension of the mask M side and the board | substrate P side of projection optical system PL, dimensions, such as polarization beam splitter PBS, illumination area IR and projection area PA of Although it depends on the dimension etc. of a circumferential direction, it sets to about 10-30 degree.

<Relationship between Projected Image Surface of Mask Pattern and Exposed Surface of Substrate>

FIG. 7: is explanatory drawing which exaggerates the relationship between the projection image surface Sm of the cylindrical pattern surface P1 of the mask M, and the exposure surface Sp of the board | substrate P supported by the cylindrical shape. . Next, the relationship between the projection image surface of the pattern of the mask and the exposure surface of a board | substrate in the exposure apparatus U3 of 1st Embodiment is demonstrated with reference to FIG.

In the exposure apparatus U3, the projection light beam EL2 is imaged by the projection optical system PL, so that the projection image surface Sm of the pattern of the mask M is formed. The projection image surface Sm is a position where the pattern of the mask M is imaged, and is a position which becomes a best focus. Moreover, you may change the projection image surface Sm, and may use the surface of positions other than a best focus. For example, the surface may be formed at a position away from the best focus. Here, the mask M is arrange | positioned at the curved surface (curve in ZX plane) of curvature radius Rm as mentioned above. Since the projection magnification of the projection optical system PL is made equal, the projection image plane Sm is also approximately in the Y direction in the range of the exposure width 2A which is the dimension of the circumferential direction of the projection area PA. It can be regarded as a part of a curved surface having a radius of curvature Rm about the extending center line AX1 '. In addition, as mentioned above, since the board | substrate P is hold | maintained by the support surface P2 of the cylindrical board | substrate support drum 25, the exposure surface Sp of the surface of the board | substrate P is the curved surface whose curvature radius Rp. (Part of the curve in the ZX plane). Furthermore, if the center line AX1 'which is the curvature center of the projection image surface Sm, and the center axis AX2 of the board | substrate support drum 25 are mutually parallel, and it is contained in the surface KS parallel to a YZ plane, KS is positioned at the midpoint of the exposure width 2A, and is further positioned to include a tangent line Cp extending in the Y-direction in which the projection image surface Sm having a radius Rm and the exposure surface Sp having a radius Rp are in contact with each other. In addition, for description, the radius Rp of the exposure surface Sp and the radius Rm of the projection image surface Sm are set in the relationship of Rp> Rm.

Here, the cylindrical drum 21 holding the mask M is rotated at an angular velocity ωm by the first driving unit 22 to support the substrate P (exposure surface Sp). Is rotated at an angular velocity ωp by the second drive unit 26. Moreover, the surface orthogonal to the surface KS and containing the tangent Cp between the projection image surface Sm and the exposure surface Sp is made into the reference surface HP. This reference plane HP is parallel to the XY plane, and it is assumed that the reference plane HP moves in the X direction at the virtual moving speed V (constant velocity). The moving speed V coincides with the moving speed (main speed) in the circumferential direction of the projection image surface Sm and the exposure surface Sp. The exposure area (projection area PA) of the present embodiment has a width of 2A centering on the tangent Cp between the projection image surface Sm and the exposure surface Sp in a direction parallel to the reference plane HP. Is the width. That is, the exposure area (projection area PA) is a distance from the tangent Cp between the projection image surface Sm and the exposure surface Sp in the + X direction and the -X direction, respectively, in the moving direction of the reference plane HP. It becomes an area including the A moved position.

Since the projection image plane Sm rotates the plane image having the radius of curvature Rm at an angular velocity ωm, the specific point on the projection image plane Sm existing on the tangent line Cp is θm = ωm. Rotate by t For this reason, the specific point is located at the point Cp1 moved by Xm = Rm · sin (θm) in the + X direction when viewed on the reference plane HP. On the other hand, if the specified point existing on the tangent line Cp is linearly moved at the moving speed V along the reference plane HP, the specified point is moved to the point Cp0 moved by V · t in the + X direction after time t passes. Located. Therefore, the shift amount in the X direction when the specific point on the tangent line Cp moves along the projection image surface Sm after time t passes, and the shift amount in the X direction when it moves linearly along the reference plane HP (DELTA) 1 becomes (DELTA) 1 = V * t-Xm = V * t-Rm * sin ((theta) m).

Similarly, since the exposure surface Sp rotates the angular velocity at ωp on the surface having the radius of curvature Rp, the specific point on the exposure surface Sp existing on the tangent Cp is viewed on the reference surface HP, at time t. After elapsed, it rotates by θp = ωp · t. For this reason, the specific point on this exposure surface Sp is located in the point Cp2 which moved by Xp = Rp * sin ((theta) p) to + X direction. Therefore, the shift amount in the X direction when the specific point on the tangent line Cp moves along the exposure surface Sp after time t passes, and the shift amount in the X direction when it moves linearly along the reference surface HP (DELTA) 2 becomes (DELTA) 2 = V * t-Xp = V * t-Rp * sin ((theta) p). Said shift amount (DELTA) 1, (DELTA) 2 is also called projection error when the point on a cylindrical surface was projected on the plane (reference surface HP). As described above with reference to FIG. 5, in the present embodiment, in the projection area PA of the exposure width 2A shown in FIG. 7, the exposure surface (in the state where the projection image of the pattern of the mask M is telecentric). Sp) is projected. That is, within the XZ plane, each point on the projection image plane Sm is projected onto the exposure surface Sp along a line parallel to the plane KS (a line perpendicular to the reference plane HP). For this reason, the point Cp1 (position Xm) on the projection image surface Sm corresponding to the point Cp0 on the reference surface HP is projected to the position Xm of the same X direction also on the exposure surface Sp, and the point on the reference surface HP The shift | offset | difference arises between the position Xp of the point Cp2 on the exposure surface Sp corresponding to Cp0. The main cause of this deviation is that the radius Rm of the projection image surface Sm and the radius Rp of the exposure surface Sp are different.

As described above, when there is a difference between the radius Rm and the radius Rp, the difference amount Δ (=) between the shift amount? Δ1-Δ2 gradually changes depending on the position in the X direction within the exposure width 2A. Thus, by quantifying (simulating) the difference amount Δ of the deviation caused by the radial difference Rm / Rp between the projection image surface Sm and the exposure surface Sp within the exposure width 2A, the image on the substrate P The optimal exposure conditions can be set in consideration of the quality (quality of the projected image) of the pattern exposed to the projection. The difference amount Δ is also referred to as a projection error when the cylindrical projection image surface Sm is transferred onto the cylindrical exposure surface Sp.

8A shows, as an example, the radius Rm of the projection image surface Sm being 125 mm, the radius Rp of the exposure surface Sp being 200 mm, and the main speed (Vm) and the exposure surface Sp of the projection image surface Sm. It is a graph which calculates the change of said shift amount (DELTA) 1, (DELTA) 2, and difference amount (DELTA) in the range of +/- 10mm as exposure width 2A in the state which made main velocity (Vp) of the same match with moving speed V. . In FIG. 8A, the horizontal axis represents the coordinate position [mm] on the reference plane HP with the origin (the position where the surface KS passes) of the projection area PA as the origin, and the vertical axis represents the calculated deviation amounts Δ1, Δ2, and difference amounts. Δ [μm]. As shown in Fig. 8A, when the circumferential speed Vm of the projection image surface Sm and the circumferential speed Vp of the exposure surface Sp coincide with each other, the absolute value of the difference amount Δ is equal to the projection image surface Sm and the exposure surface Sp. It gradually increases as it moves away from the position (origin) of the tangent line Cp to be in contact with the X direction. For example, in order to reduce the absolute value of the difference amount Δ to about 1 μm for faithful transfer of a pattern having a minimum line width of several μm to 10 μm, from the calculation result of FIG. 8A, the projection area ( The exposure width 2A of PA) needs to be ± 6 mm (12 mm in width) or less.

Moreover, when the circumferential speed Vm of the projection image surface Sm makes Vf the circumferential speed of the pattern surface of the mask M hold | maintained by the cylindrical drum 21, Vm = by the projection magnification beta of the projection optical system PL. It is set in a relationship of? Vf. For example, when the projection magnification β is 1.00 (equal magnification), the main speed Vf of the pattern surface of the mask M and the main speed Vp of the exposure surface Sp are set equal, and the projection magnification β is 2.00 (2 times magnification). ), 2 · Vf = Vp. In general, as shown in FIG. 8A, since the respective main speeds of the projection image surface Sm and the exposure surface Sp are set to Vm = Vp, the mask is such that the relationship is β · Vf = Vp (reference velocity relationship). The rotational angular velocity between the cylindrical drum 21 holding M and the substrate supporting drum 25 supporting the substrate P is precisely controlled. However, a slight difference was made between the circumferential speed Vm of the projection image surface Sm and the circumferential speed Vp of the exposure surface Sp to simulate how the difference amount Δ in FIG. 8A changes as shown in FIG. 8C, which will be described later. By giving a slight difference to the main speed Vm and the main speed Vp, the exposure width 2A which can be used can be enlarged in the state which suppressed the absolute value of the difference amount (DELTA). In this embodiment, under the condition that the radius Rp of the exposure surface Sp is larger than the radius Rm of the projection image surface Sm, the circumferential speed Vp of the exposure surface Sp is relatively larger than the circumferential speed Vm of the projection image surface Sm. Lowered. Specifically, without changing the circumferential speed Vp of the exposure surface Sp, the projected image surface Sm so that the circumferential speed Vm of the projection image surface Sm is slightly higher than the moving speed V of the reference surface HP shown in FIG. Only the rotational angular velocity ωm on the side of () (mask M) was slightly changed. The angular velocity after the change is set to ωm ', and the rotational angle of the projected image surface Sm after the elapse of time t is set to θm'. When the main speed Vm of the projection image surface Sm is made slightly higher with respect to the moving speed V, and the shift amount Δ1 is calculated, the curve of the graph of the shift amount Δ1 in FIG. 8A is negatively inclined at the zero point. Change to have

So, in this embodiment, using such a tendency, the main speed Vm (angular velocity) of the projection image surface Sm so that the difference amount (DELTA) becomes zero in two symmetrical positions which sandwiched the origin 0 at the position in the exposure width 2A. ω m ') is set. FIG. 8B is a graph showing the calculation results of the difference amounts Δ, the shift amounts Δ1 and Δ2 obtained after changing the circumferential speed Vm of the projection image surface Sm, and the definition of the vertical axis and the horizontal axis is the same as that of FIG. 8A. In FIG. 8B, the graph of the shift amount Δ2 is the same as that in FIG. 8A, but the graph of the shift amount Δ1 is a projection image surface (zero) at each position of + 5mm, -5mm in the exposure width, and the origin 0 so that the shift amount Δ1 becomes zero. The angular velocity ωm '(θm') of Sm) is set. As a result, the difference amount Δ changes to a negative slope within a range of ± 4 mm in the exposure width, and changes to a positive slope in the outside range, and origin 0 and +6.4 mm in the exposure width. , Zero at each position of -6.4mm.

When the allowable range as the difference amount Δ is, for example, about ± 1 μm, the exposure width under the conditions of FIG. 8A was ± 6 mm, but the exposure width under the conditions of FIG. 8B was increased to about ± 8 mm. All. This means that the size of the scanning exposure direction (circumferential direction) of the projection area PA can be increased (about 33%) from 12 mm to 16 mm. It means that productivity can be improved by making the conveyance speed of the board | substrate P about 33% faster, without falling. In addition, the fact that the dimension of the projection area PA can be increased by 33% also means that the exposure amount applied to the substrate P can be increased by that much, which can alleviate the exposure conditions. Moreover, the exposure apparatus U3 measures the rotation of the cylindrical drum 21 which hold | maintains the mask M, and the rotation of the board | substrate support drum 25 which supports the board | substrate P with a high-resolution rotary encoder, respectively. By performing servo control while making it possible to perform the rotation control with high precision, it is possible to produce a slight difference in the rotational speed.

When the main speed Vp of the exposure surface Sp is made the same as the moving speed V of the reference surface HP, and the main speed Vm of the projection image surface Sm is slightly higher than the moving speed V of the reference surface HP, it is shown in FIG. 8A. The difference amount Δ shown changes as shown in Fig. 8C. 8C shows the rate of change of the main speed Vm of the projection image surface Sm with respect to the main speed Vp (= V) of the exposure surface Sp with respect to the graph of the difference amount Δ in FIG. 8A. ) / Vp]%, the tendency in the case of changing from ± 0% to + 0.01%. The graph of the difference amount Δ in α = ± 0% in FIG. 8C is the same as the graph of the difference amount Δ in FIG. 8A. If the rate of change α = ± 0%, the main speed Vm and the main speed Vp coincide.For example, if the rate of change α = + 0.02%, the main speed Vm is 0.02% larger than the main speed Vp. to be. Based on the same calculation as in FIG. 8C, in FIG. 8B, the simulation was performed in a state in which the circumferential speed Vm of the projection image surface Sm was increased by about 0.026% with respect to the reference speed V (= Vp) of the reference plane HP. The simulation result of FIG. 8C replaces (theta) m of Rmsin ((theta) m) by (1 + alpha) * (theta) m in the formula which calculates the shift amount (DELTA) 1 with respect to the reference plane HP of the projection image surface Sm, and changes rate (alpha) in various ways It is obtained by changing into. In practice, when V · t is replaced with A representing the position (mm) in the X direction of the exposure width, it is simply obtained by the following equation.

Δ = Δ1−Δ2 = (A-Rm · sin [(1 + α) · A / Rm])-Δ2

As described above, when the radius Rm of the projection image surface Sm and the radius Rp of the exposure surface Sp are different, the movement speed (main velocity Vm, Vp) of the projection image surface Sm and the exposure surface Sp is slightly different. By giving the difference of the various exposure conditions at the time of scanning exposure (radius of the mask M, sensitivity of the photosensitive layer, transmission speed of the substrate P, power of the light source for illumination, dimensions of the projection area PA, etc. It is possible to widen the setting range of N), thereby obtaining an exposure apparatus that can flexibly respond to process changes and the like.

Next, as shown in FIG. 8B, when a slight difference is given to each of the peripheral speeds Vm and Vp of the projection image surface Sm and the exposure surface Sp, the contrast of the pattern image obtained on the exposure surface Sp is obtained. This will be described with reference to FIG. 9. FIG. 9 shows the position (absolute value) of the exposure width in which the origin 0 in FIG. 8A and FIG. 7B is 0 mm on the horizontal axis, and takes the contrast ratio which made the value at origin 0 1.00 (100%) on the vertical axis, and projects. When there is no main speed difference between the upper surface Sm and the exposure surface Sp (FIG. 8A) and when there is a main speed difference (FIG. 8B), the change in the contrast ratio according to the position within the exposure width is calculated. In this embodiment, the wavelength λ of the illumination light beam EL1 (exposure light) was 365 nm, and the numerical aperture NA of the projection optical system PL (PLM) shown in FIG. 4 was 0.0875 and the process constant k was 0.6. Since the maximum resolution Rs obtained under this condition is 2.5 μm from Rs = k · (λ / NA), the L & S (line and space) pattern of 2.5 μm was used in the calculation.

As shown in FIG. 9, by setting the peripheral speed Vp of the surface side with larger curvature among the projection image surface Sm of the mask pattern and the exposure surface Sp on the board | substrate P to be slightly lower than the other main speed Vm, The range of exposure width from which a high contrast ratio is obtained becomes wider. For example, in order to maintain the quality of the pattern image transferred onto the exposure surface Sp, when a contrast ratio of about 0.8 is required, the exposure width in the absence of the main speed difference (Vm = Vp) is about ± 6 mm. On the other hand, the exposure width in the state (Vm> Vp) with the main speed difference can be ensured by ± 8 mm or more. If the contrast ratio is about 0.6, the exposure width in the state where the main speed difference (Vm> Vp) is widened is about ± 9.5 mm. As mentioned above, the dimension of the scanning exposure direction of the projection area | region PA (exposure width 2A) by giving a slight difference to the main speed Vm of the projection image surface Sm, and the main speed Vp of the exposure surface Sp. Even if () is enlarged, the pattern exposure which maintained the contrast (good quality) of the pattern image to be projected favorably can be performed. In addition, since the exposure width 2A in the scanning exposure direction of the projection area PA can be increased, the transmission speed of the substrate P is higher or the exposure light per unit area in the projection area PA (projection light beam) is increased. (EL2)) can reduce the illuminance.

By the way, as shown in FIG. 8C, when simulating the difference amount Δ with respect to the position of the exposure width while changing the main speed difference Vm-Vp little by little, the projection image surface Sm of the pattern in the projection area PA. ) And the average value or the maximum value of the difference amount Δ of the deviation in the scanning exposure direction between the exposure surface Sp on the substrate P is preferably set to be smaller than the minimum line width (minimum dimension) on the pattern to be transferred. . For example, when attention is paid to the range of exposure width 0mm-+ 6mm among the exposure width in FIG. 8B, the average value of difference amount (DELTA) in that range will be about -0.42micrometer, and the maximum value will be about -0.66micrometer. Moreover, when attention is paid to the range of exposure width 0mm-+ 8mm, the average value of the difference amount (DELTA) in that range will be about -0.18 micrometer, and the maximum value will be about +1.2 micrometer. When the minimum line width on the pattern to be transferred is set to 2.5 μm set at the time of the simulation of FIG. 9, the average value and the maximum value of the difference amount Δ are determined in any of the range up to 6 mm and the width up to 8 mm. It can be made smaller than the minimum line width of 2.5 μm.

In addition, as shown in FIG. 8B, at least 3 positions where the difference amount Δ becomes zero within the actual exposure width (the dimension of the scanning exposure direction of the projection area PA) in the change characteristic of the difference amount Δ obtained in the simulation. It is preferable to set the location. For example, when the projection area PA is set to an exposure width of ± 8 mm, one point in the pattern image projected in the projection area PA is between +8 mm from the position of -8 mm in the exposure width between scanning exposures. Go to location. In the meantime, one point in the pattern image passes through each of the position -6.4mm, the position 0mm (the origin), and the position + 6.4mm where the difference amount Δ becomes zero, and is transferred onto the exposure surface Sp. Thus, each rotation of the cylindrical drum 21 holding the mask M and the substrate supporting drum 25 so that the difference amount Δ becomes zero at at least three places in the exposure width in the scanning exposure direction of the projection area PA. By precisely controlling the speed, the size (line width) error in the scanning exposure direction of the pattern image exposed in the projection area PA (exposed surface Sp) can be reduced to a small degree, and faithful pattern transfer is possible. .

As described above, the maximum resolution Rs is Rs based on the numerical aperture NA on the projection image surface Sm side of the projection optical system PL, the wavelength λ of the illumination light beam EL2, and the process constant k (usually 1 or less). It is prescribed | regulated as = k * ((lambda / NA). In this case, when the moving speed of the reference plane HP is V, the moving distance of the reference plane HP is x, and A is the absolute value of the exposure width, the following relationship is preferably satisfied.

[Equation 1]

[Formula 2]

The expression F (x) is an expression representing the difference amount Δ at a position x at a point on the reference plane HP, but the relationship between the moving speed V and the moving distance x of the reference plane HP has been described with reference to FIG. 7. As it corresponds to time t (= x / V). The exposure apparatus U3 according to the present embodiment satisfies the above formula, so that even if the exposure width of the effective projection area PA is increased, the substrate can be provided with good image quality without reducing the contrast of the projected pattern. A pattern can be formed in (P).

Moreover, the exposure apparatus U3 which concerns on this embodiment can enable the cylindrical drum 21 which hold | maintains the mask M to be replaceable. In the case of a reflective cylindrical mask, a high reflection portion and a low reflection portion (light absorbing portion) as a mask pattern can be directly formed on the outer circumferential surface of the cylindrical drum 21. In that case, mask replacement is performed for each cylindrical drum 21. At that time, the radius (diameter) of the cylindrical drum 21 of the reflective cylindrical mask newly attached to the exposure apparatus may be different from the radius of the cylindrical mask attached before the replacement. This may occur in the case of changing the dimensions (such as the size of the display panel) of the device to be exposed on the substrate P. In this embodiment, even in such a case, the cylindrical drum 21 is calculated by performing the same calculations (simulation) as in FIGS. 8A to 7C and 9 based on the radius of the mask pattern surface of the cylindrical drum 21 after replacement. And the rotational angular velocity difference to be set to the substrate supporting drum 25, the exposure width of the projection area PA to be set, the illuminance of the illumination light beam EL2 to be adjusted, or the conveying speed of the substrate P to be adjusted (substrate support Parameters such as the rotational speed of the drum 25) can be determined in advance. In addition, when the radius Rm mounts the some cylindrical drum 21 which differs by the millimeter unit or cm unit so that replacement is possible, the exposure apparatus which supports the rotation center axis AX1 of the cylindrical drum 21 is supported. A mechanism for adjusting the bearing portion on the side in the Z direction is provided. Moreover, when changing the exposure width of the scanning exposure direction of projection area | region PA as a parameter to adjust, for example, the illumination field stop 55 of FIG. 4, or the field stop 63 of the intermediate image surface P7. ) Can be adjusted. As described above, the exposure apparatus U3 (substrate processing apparatus) can appropriately adjust the exposure conditions in accordance with the mask M by adjusting the above various parameters, and can perform appropriate exposure on the mask M.

The exposure apparatus U3 selects at least one of the moving speed of the substrate P by the substrate holding mechanism 12 (substrate support drum 25), and the width of the scanning exposure direction of the projection area PA, Based on a value calculated based on a conditional formula defined by the relationship between the projected image surface Sm and the exposure surface Sp, or a measurement result obtained by adding a measurement result such as expansion or contraction of the substrate P during the manufacturing process. It is preferable to adjust. Thereby, the exposure apparatus U3 can adjust various conditions automatically.

The exposure apparatus U3 of this embodiment presupposes that the dimension of the width direction of all pattern areas, such as a display panel formed on the board | substrate P, is larger than the dimension of the direction of the axis AX2 of the projection area PA. In FIG. 3, six projection optical systems PL1 to PL6 are provided such that the projection area PA by one projection optical system PL is lined up as shown in the right drawing of FIG. 3, but the number is the width of the substrate P. Depending on the number, one may be used or seven or more may be used.

When arranging the plurality of projection optical systems PL in the width direction of the substrate P, the exposure amount accumulated over the exposure width of each projection area PA at the time of scanning exposure is a direction perpendicular to the scanning exposure direction. In the (width direction of the substrate P), it is preferable to make it substantially constant (for example, within ± several%) anywhere.

[Second embodiment]

Next, with reference to FIG. 10, the exposure apparatus U3a of 2nd Embodiment is demonstrated. In addition, only the parts different from 1st Embodiment are demonstrated so that the description which overlaps, and the same code | symbol as 1st Embodiment is demonstrated about the component same as 1st Embodiment. FIG. 10: is a figure which shows the whole structure of the exposure apparatus (substrate processing apparatus) of 2nd Embodiment. Although the exposure apparatus U3 of 1st Embodiment was the structure which hold | maintains the board | substrate P which passes through a projection area | region by the cylindrical substrate support drum 25, the exposure apparatus U3a of 2nd Embodiment is The board | substrate P of the flat shape is comprised by the movable board | substrate support mechanism 12a.

In the exposure apparatus U3a of 2nd Embodiment, the board | substrate support mechanism 12a is orthogonal to the board | substrate stage 102 which hold | maintains the board | substrate P in planar shape, and the board | substrate stage 102 with the center plane CL. And a moving device (not shown) for scanning movement along the X direction in the plane (XY plane).

Since the support surface P2 of the substrate P of FIG. 10 is a plane substantially parallel to the XY plane, the projection light beam EL2 reflected by the mask M and incident on the projection optical modules PLM (PL1 to PL6). Is set so that, when projected onto the substrate P, the chief ray of the projection light beam EL2 is perpendicular to the XY plane.

In addition, also in 2nd Embodiment, similarly to FIG. 2, from the center point of illumination area | region IR1 (and IR3, IR5) on the mask M, when viewed in XZ plane, it is illumination area | region IR2 (and IR4, IR6). The circumferential length to the center point of) is the center point of the second projection area PA2 (and PA4 and PA6) from the center point of the projection area PA1 (and PA3 and PA5) on the substrate P along the support surface P2. It is set substantially the same as the circumferential length of up to.

Also in the exposure apparatus U3a of FIG. 10, the lower-level control apparatus 16 controls the moving apparatus (linear motor for scanning exposure, an actuator for fine movements, etc.) of the board | substrate support mechanism 12, and the cylindrical drum 21 The substrate stage 102 is driven in synchronism with the rotation of. Moreover, the board | substrate P in this embodiment may be flexible substrates, such as a resin film, and may be a glass plate for liquid crystal display panels. In addition, when scanning exposure is performed by the precise movement of the substrate stage 102, a structure (eg, a pin chuck method or a porous method) that vacuum-adsorbs the substrate P to the support surface P2. Flat holders, etc.) are provided. In the case where the substrate P is formed in a planar shape without moving the substrate stage 102, the substrate P is placed in a low friction state or non-contacted by the gas layer formed by the air bearing on the support surface P2. A mechanism for supporting in a state (for example, a Bernoulli chuck plane holder or the like) and a tension applying mechanism for providing a predetermined tension to the substrate P to maintain flatness are provided.

Next, FIG. 11 shows the relationship between the movement of the projection image surface Sm of the pattern of the mask M in the exposure apparatus U3a of 2nd Embodiment, and the movement of the exposure surface Sp of the board | substrate P. FIG. It demonstrates with reference. FIG. 11: is explanatory drawing which exaggerated the relationship between the projection image surface Sm of the pattern of the mask M, and the exposure surface Sp on the board | substrate P under the same conditions and definition as the previous FIG.

The exposure apparatus U3a forms the projection image surface Sm of the pattern of the mask M of cylindrical surface shape by telecentric projection optical system PL. The projection image surface Sm is also the best focus surface on which the pattern of the mask M is imaged. Here, since the pattern surface of the mask M is formed in the curved surface of curvature radius Rm, the projection image surface Sm also has the cylindrical surface (circular arc curve in ZX plane) of curvature radius Rm centering on the virtual line AX1 '. Becomes part of). On the other hand, since the substrate P is held flat by the substrate stage 102, the exposure surface Sp becomes a plane (straight line in the ZX plane). Therefore, the exposure surface Sp in this embodiment becomes a surface corresponded with the reference surface HP shown in previous FIG. That is, the exposure surface Sp can be regarded as a surface having a curvature radius Rp of infinity (∞) or a very large curved surface with respect to the radius Rm of the projection image surface Sm.

Since the projection image plane Sm rotates the plane image having the radius of curvature Rm at an angular velocity ωm, the point Cp on the projection image plane Sm where the projection image plane Sm and the exposure surface Sp is in contact with each other after time t passes. It is located at the point Cp1 rotated by θm = ωm · t. Therefore, the position Xm of the direction (X direction) along the reference plane HP of the point Cp1 on the projection image surface Sm becomes Xm = Rm * sin ((theta) m). In addition, since the exposure surface Sp is a plane coinciding with the reference surface HP, the point Cp on the exposure surface Sp where the projection image surface Sm and the exposure surface Sp is in contact is the X direction after the time t passes. Is located at the point Cp0 shifted by Xp = V • t. Therefore, as described above with reference to FIG. 7, the shift amount Δ1 in the X direction (scanning exposure direction) between the point Cp1 on the projection image surface Sm and the point Cp0 on the exposure surface Sp after the elapse of time t is Δ1 = V. t-Rm * sin (θm).

The shift amount Δ1 in FIG. 11 is a projection error (sin error) caused when the mask M or the projection image surface Sm moves at an isotropic speed, and the substrate P or the exposure surface Sp moves at a constant velocity line. . The shift amount Δ1 increases gradually as the shift amount Δ1 moves away from the position in the ± direction when the point Cp is positioned at the surface KS serving as the center in the exposure width 2A. During scanning exposure, the pattern image of the projection image surface Sm is continuously integrated and transferred to the exposure surface Sp on the substrate P over the range of the exposure width 2A. However, due to the influence of the projection error of the shift amount Δ1, the dimension in the scanning exposure direction on the transferred pattern has an error with respect to the dimension of the pattern on the mask M, and the transfer fidelity decreases.

Therefore, also in this embodiment, in the projection image surface Sm and the exposure surface Sp, by setting the circumferential speed of the surface with the smallest radius of curvature slightly higher with respect to the circumferential speed of the surface with the larger radius of curvature, The same effects as in the first embodiment can be obtained. In this embodiment, since the radius of curvature Rp of the exposure surface Sp and the radius of curvature Rm of the projection image surface Sm are Rp >> Rm, the projection image surface is relatively relative to the moving speed V of the exposure surface Sp. Increase the main speed Vm of (Sm) slightly.

Hereinafter, an example in which various simulations are performed by the configuration of the exposure apparatus U3a will be described with reference to FIGS. 12 to 18. 12 is a graph showing a change in the shift amount Δ1 due to the presence or absence of a difference between the moving speed V (the same as the main speed Vp) of the exposure surface Sp and the main speed Vm of the projection image surface Sm, and the vertical axis of FIG. 12. 11 shows the shift amount Δ1 in FIG. 11, and the horizontal axis indicates the exposure width similarly to FIGS. 8A and 7B. In addition, in each simulation after FIG. 12, the radius Rm of the mask M, ie, the radius Rm of the projection image surface Sm, was set to 150 mm. As described in FIG. 11, in the case where the moving speed V (main speed Vp) of the exposure surface Sp and the main speed Vm of the projection image surface Sm are the same, that is, there is no main speed difference, the allowable range of the shift amount Δ1 If it is set to about ± 1 μm, the exposure width is in a range of about ± 5 mm.

Thus, the angular velocity of the projection image surface Sm is increased from ωm to ωm '(ωm <ωm') so as to slightly increase the circumferential speed Vm of the projection image surface Sm with respect to the movement speed V (main velocity Vp) of the exposure surface Sp. When it is adjusted to, the shift amount Δ1 'changes to a negative slope in the range of an exposure width ± 4mm around the origin 0, and changes to a positive slope outside the range. When the position on the exposure width at which the shift amount Δ1 'is zero is about ± 6.7 mm, the exposure width at which the allowable range of the shift amount Δ1' is about ± 1 μm is in a range of about ± 8 mm. This increases the exposure width which can be used as the scanning exposure by about 60% as compared with the case where no main speed difference is provided.

Next, similarly to FIG. 9, a slight difference between the movement speed V (= main speed Vp) of the exposure surface Sp and the main speed Vm of the projection image surface Sm (no main speed difference) The change of the contrast value (or contrast ratio) on the pattern with the case where () is given (with the main speed difference) will be described.

FIG. 13A shows the mask M image when the numerical aperture NA on the exposure surface Sp side of the projection optical system PL is 0.0875, the wavelength of the illumination light beam EL1 is 365 nm, the process constant 0.6, and the illumination δ is 0.7. The contrast of the image obtained on the exposure surface Sp when the L & S pattern of largest resolution Rs = 2.5 micrometers formed in this is projected is shown. FIG. 13B shows the contrast of the image obtained on the exposure surface Sp when the isolated line ISO pattern of the maximum resolution Rs = 2.5 μm obtained under the same projection conditions is projected.

In the L & S pattern of 2.5 µm and the ISO pattern, the phase fraction of the phase is close to 1.0 as the contrast value, and the dark portion is preferably the intensity distribution CN1 that is close to zero. Contrast value is calculated | required by (Imax-Imin) / (Imax + Imin) by the maximum value Imax of the light intensity for light and the minimum value Imin of the light intensity of a dark part. Although the intensity distribution CN1 is a state with high contrast as a whole, the difference (amplitude) between the maximum value Imax and the minimum value Imin becomes small like the intensity distribution CN2 from the low state. The intensity distribution CN1 of the image shown in FIG. 13A and FIG. 12B is the contrast of the stopped projection image of the L & S pattern or the ISO pattern of 2.5 μm, but in the case of scanning exposure, the substrate P moves over the set exposure width. In the meantime, for example, the accumulated intensity distribution CN1 is transferred to the substrate P in the scanning exposure direction while slowing down in accordance with the change of the difference amount Δ described in FIG. 8B or the shift amount Δ1 described in FIG. 12. It will be the final contrast on the pattern.

Next, under the projection exposure conditions (Rm = 150mm, Rp = ∞, NA = 0.0875, λ = 365nm, k = 0.6) described in Figs. 13A and 12B, the positions of the exposure widths of the 2.5 &lt; RTI ID = 0.0 &gt; The results of simulating the change in contrast value (contrast ratio) relative to each other are shown in FIGS. 14 and 15. The horizontal axis of FIG. 14, FIG. 15 shows the position of the exposure width A which is a positive side, and the vertical axis normalized the contrast value calculated by (Imax-Imin) / (Imax + Imin), and the contrast value in exposure width 0mm to 1.0. The contrast ratio in the case is shown. 14 shows the contrast change when there is no main speed difference in which the moving speed V (= main speed Vp) of the exposure surface Sp coincides with the main speed Vm of the projection image surface Sm, and FIG. 15 shows FIG. 12. Contrast change in the case where there is a main speed difference in which the main speed Vm of the projection image surface Sm is slightly larger than the moving speed V (= main speed Vp) of the exposure surface Sp so as to have a change characteristic such as a shift amount Δ1 'in the middle. Indicates.

As shown in Fig. 14, when there is no main speed difference (before correction), the contrast ratio drops substantially from the position of 5 mm or more, although the position of the exposure width is almost constant between about 0 to about 4 mm. When the exposure width is 8 mm or more, the contrast ratio is 0.4 or less, and the exposure may be insufficient in exposure to the photoresist. In the simulation, the contrast value at the position 0 mm of the exposure width was about 0.934, and the contrast ratio was expressed by normalizing the value to 1.0.

On the other hand, when there is a main speed difference as shown in Fig. 15 (after correction), the contrast ratio gradually decreases from 1.0 to 0.8 while the position of the exposure width is between 0 and 4 mm, but about 0.8 between positions 4 mm and 8 mm. To keep it. In the simulation, the contrast ratio at the position 5 mm of the exposure width is about 0.77 and the contrast ratio at the position 7 mm is about 0.82.

Thus, the projection area PA which can be set at the time of scanning exposure by making the main speed Vm of the projection image surface Sm slightly larger with respect to the moving speed V (= main speed Vp) of a planar exposure surface Sp is shown. 2A of exposure width can be enlarged.

As shown in Fig. 16, the contrast ratio of the image of the 2.5-micrometer ISO pattern when there is no main speed difference (before correction) is almost constant up to 5 mm in the exposure width, but gradually decreases from 5 mm or more, and the position 6 mm. At about 0.9, about 0.6 at position 8mm, about 0.5 at position 9mm, and about 0.4 at position 10mm. In addition, the contrast ratio in FIG. 16 is the contrast value (position) obtained in the image of the 2.5-micrometer ISO pattern on the basis of the contrast value (about 0.934) of the image of the 2.5 micrometers L & S pattern obtained at the position 0 mm of the exposure width in FIG. 0 mm to about 0.968). Therefore, the initial value (value at the position 0mm) of the contrast ratio shown in FIG. 16 is about 1.04.

On the other hand, when there is a main speed difference as shown in Fig. 17 (after correction), the contrast ratio on the ISO pattern of 2.5 µm is maintained at 0.9 or more in the range of 0 to 8 mm in the exposure width, and is 0.8 at the position 9 mm. Although lowered to an extent, about 0.67 is maintained even at the position 10mm. As described above, the projection that can be set at the time of scanning exposure is made by increasing the main speed Vm of the projection image surface Sm relatively slightly with respect to the moving speed V (= main speed Vp) of the planar exposure surface Sp. The exposure width 2A of the area PA can be increased.

By the way, a slight difference is provided between the main speed Vm of the projection image surface Sm and the main speed Vp (or the linear movement speed V) of the exposure surface Sp, and the difference amount Δ in FIG. 8B or the deviation in FIG. 12. In order to obtain the same characteristics as the amount Δ1 'and determine the range of the optimum exposure width 2A (or A), there is also an evaluation method that uses the relationship between the difference amount Δ or the deviation amount Δ1' and the resolution Rs. Hereinafter, although the method is demonstrated, for the sake of simplicity, the difference amount Δ in FIG. 8B or the shift amount Δ1 'in FIG. 12 may be replaced with the phase shift amount Δ.

In the evaluation method, the relationship between the phase shift amount Δ of the mean / Rs, or the average amount of displacement / Rs of the Δ ² is calculated for each of the exposure width position. Therefore, an example of simulating the average value / Rs of the phase displacement amount Δ as the evaluation value Q1 and the average value / Rs of the phase displacement amount Δ ² as the evaluation value Q2 will be described with reference to FIGS. 18 and 19. Although FIG. 18 is the same as the graph of the shift amount (DELTA) 1 'shown in FIG. 12, the exposure width to be calculated was made into the range of +/- 12mm. Incidentally, the sample points on the exposure width where the shift amount Δ1 '(image displacement amount Δ) is calculated are 0.5 mm apart as in FIG.

The average value of the image displacement amount Δ is the average value of the absolute values of the respective displacement amounts Δ 1 ′ obtained from the origin 0 mm of the exposure width to the sample point of interest. For example, the average value of the phase displacement amount Δ at the sample point at position -10 mm adds the absolute value of the deviation amount Δ1 'obtained at each sample point (21 points in Fig. 18) between the position 0 mm and the position -10 mm, It is obtained by dividing it by the sample score. In the case of FIG. 18, the addition value of the absolute value of the shift amount (DELTA) 1 'in each sample point from the position 0mm to -10mm becomes 20.86 micrometers, and the average value divided by the sample score 21 is about 0.99 micrometer. In addition, the resolution Rs on a simulation was 2.09 micrometers here as NA = 0.0875, (lambda) = 368 nm, process constant k = 0.5. Therefore, the evaluation value Q1 (unitless unit) in the position -10 mm of exposure width is set to about 0.48. When the above calculation is performed at each position (sample point) within the exposure width, the change tendency of the evaluation value Q1 can be seen.

Further, (the displacement amount Δ) the average value of the ^two, will average to a value (㎛ ²⁾ squaring the absolute value of each displacement amount Δ1 'obtained among the sample points to which attention from the origin of the exposure width 0mm added. In the case of Fig. 18, for example, the square value of the absolute value of the deviation Δ1 'at each sample point from the position 0 mm to -10 mm is added to be 42.47 µm ² , and the average value divided by the sample score 21 is about 2.02. It becomes micrometer <^2> . Since the resolution Rs in the simulation was 2.09 µm, the evaluation value Q2 at the position -10 mm of the exposure width was about 0.97 µm. When the above calculation is performed at each position (sample point) within the exposure width, the change tendency of the evaluation value Q2 (µm) can be seen.

19 is a graph in which the evaluation values Q1 and Q2 obtained as described above are taken on the vertical axis, and the exposure width is positioned on the horizontal axis. Evaluation value Q1 (average value / resolution Rs of image displacement amount (DELTA)) changes smoothly as exposure width (absolute value) becomes large, and becomes substantially 1.0 at the position of +/- 12mm of exposure width. This means that the average value of the phase displacement amount Δ at the position of ± 12 mm almost coincides with the resolution Rs. On the other hand, the evaluation value Q2 (the displacement amount average / resolution of Δ ² Rs) is, to increase sharply in the range up to the furnace of the wide position ± 8mm changes in the same trend as the evaluation value Q1, however, 8mm or more, the exposure width positions ± It is almost 1 (micrometer) at 10 mm.

Here, about the contrast change of the ISO pattern shown in FIG. 17 above, or the contrast change of the L & S pattern shown in FIG. 15, contrast ratio is falling large since the exposure width is 8 mm or more. The change in the contrast ratio obtained in Figs. 15 and 17 is a case where the resolution force Rs is 2.5 m, which is not calculated at Rs = 2.09 m, but the tendency is substantially the same. In this manner, the optimum exposure width reflecting the change in contrast can also be determined by the evaluation method using the evaluation value Q1 or Q2 as an index.

In addition, in the case of this embodiment, Formula F (x) used by the 1st Embodiment mentioned above moves the exposure surface Sp to the moving speed V (main velocity Vp) in the X direction parallel to the reference surface HP, Therefore, it is substituted by the following formula F '(x).

[Equation 3]

The exposure apparatus U3a of 2nd Embodiment shown in FIG. 10 applies this Formula F '(x) to the formula of said 1st Embodiment, and can obtain the same effect as 1st Embodiment by satisfying the said relationship. have.

[Third embodiment]

Next, with reference to FIG. 20, the exposure apparatus U3b of 3rd Embodiment is demonstrated. In addition, only the parts different from 1st, 2nd embodiment are demonstrated and the same code | symbol as 1st, 2nd embodiment is attached | subjected about the component different from 1st, 2nd embodiment so that the description which overlaps. Will be explained. FIG. 20 is a diagram illustrating an entire configuration of an exposure apparatus (substrate processing apparatus) according to the third embodiment. Although the exposure apparatus U3b of 3rd Embodiment was the structure using the reflection type mask in which the light which reflected on the pattern surface of the mask M becomes a projection light beam, the exposure apparatus U3b of 3rd Embodiment has the It is set as the structure using the transmissive mask which the light which permeate | transmitted the pattern surface becomes a projection light flux.

In the exposure apparatus U3b of 3rd Embodiment, the mask holding mechanism 11a is the cylindrical drum (mask holding drum) 21a which hold | maintains the mask M, and the guide roller which supports the cylindrical drum 21a ( 93, a drive roller 94 for driving the cylindrical drum 21a, and a drive unit 96 are provided.

The cylindrical drum 21a forms the mask surface in which the illumination area | region IR on the mask MA is arrange | positioned. In this embodiment, the mask surface includes the surface (henceforth "cylindrical surface") which rotated the line segment (the bus bar) about the axis (central axis of cylindrical shape) parallel to this line segment. The cylindrical surface is, for example, an outer circumferential surface of a cylinder, an outer circumferential surface of a cylinder, or the like. The cylindrical drum 21a is comprised from glass, quartz, etc., for example, is cylindrical in shape, and the outer peripheral surface (cylindrical surface) forms a mask surface. That is, in the present embodiment, the illumination region on the mask MA is curved in a cylindrical shape having a radius of curvature Rm from the center line. The part of the cylindrical drum 21a which overlaps with the pattern of the mask M as seen from the radial direction of the mask holding drum 21a, for example, the center part other than the both ends of the Y-axis direction of the cylindrical drum 21a, is illuminated. It has light transmissivity with respect to the light beam EL1.

The mask MA is, for example, a transmissive planar sheet mask in which a pattern is formed by a light shielding layer such as chrome on one surface of a very thin glass plate (for example, 100 to 500 µm in thickness) having a good flatness. It is created as, and it is curved along the outer peripheral surface of the cylindrical drum 21a, and is used in the state wound (attached) to this outer peripheral surface. The mask MA has a pattern non-formation area | region in which a pattern is not formed, and is attached to the cylindrical drum 21a in a pattern non-formation area | region. The mask MA can be released to the cylindrical drum 21a. Like the mask M of 1st Embodiment, the mask MA is wound on the outer peripheral surface of the cylindrical drum 21a by a transparent cylindrical base material instead of winding to the cylindrical drum 21a by a transparent cylindrical base material. The mask pattern by light shielding layers, such as chromium, may be directly drawn and integrated. Also in this case, the cylindrical drum 21a functions as a holding member of a mask pattern.

The guide roller 93 and the drive roller 94 extend in the Y-axis direction parallel to the central axis of the cylindrical drum 21a. The guide roller 93 and the drive roller 94 are provided so that rotation is possible about the axis parallel to a central axis. The guide roller 93 and the drive roller 94 are provided so as not to contact the mask MA held by the cylindrical drum 21a. The drive roller 94 is connected with the drive part 96. The drive roller 94 rotates the cylindrical drum 21a about the central axis by transmitting the torque supplied from the drive part 96 to the cylindrical drum 21a.

The illuminating device 13a of this embodiment is equipped with the light source (not shown) and illumination optical system ILa. The illumination optical system ILa is provided with the some (for example 6) illumination optical systems ILa1-ILa6 lined up in the Y-axis direction corresponding to each of the some projection optical systems PL1-PL6. As a light source, various light sources can be used similarly to the above-mentioned various lighting apparatus 13a. The illumination light emitted from the light source is uniform in illuminance distribution, and is divided into a plurality of illumination optical systems ILa1 to ILa6 via a light guide member such as an optical fiber.

Each of the plurality of illumination optical systems ILa1 to ILa6 includes a plurality of optical members such as a lens, an integrator optical system, a rod lens, a fly's eye lens, and the like, and the illumination light beam EL1 having a uniform illuminance distribution. Illuminate the illumination area IR. In this embodiment, the some illumination optical systems ILa1-ILa6 are arrange | positioned inside the cylindrical drum 21a. Each of the plurality of illumination optical systems IL1a to ILa6 passes through the cylindrical drum 21a from the inside of the cylindrical drum 21a, and passes through each illumination region on the mask MA held on the outer circumferential surface of the cylindrical drum 21a. Illuminate.

The illumination device 13a guides the light emitted from the light source by the illumination optical systems ILa1 to ILa6, and irradiates the mask MA from the guided illumination light beam from the inside of the cylindrical drum 21a. The illuminating device 13a illuminates a part (lighting area IR) of the mask M held by the cylindrical drum 21a with uniform brightness by the illumination light beam EL1. Moreover, the light source may be arrange | positioned inside the cylindrical drum 21a, and may be arrange | positioned outside the cylindrical drum 21a. In addition, the light source may be a device (external device) separate from the exposure apparatus EX.

When the exposure apparatus U3b uses a transmissive mask as a mask, similarly to the exposure apparatuses U3 and U3a, the movement speed (main velocity Vm) of the projection image surface Sm and the movement speed V of the exposure surface Sp are exposed. Alternatively, by adjusting (correcting) the relationship with the main speed Vp as in the second embodiment, the exposure width that can be used in scanning exposure can be enlarged.

[Fourth embodiment]

Next, with reference to FIG. 21, the exposure apparatus U3c of 4th Embodiment is demonstrated. In addition, only the parts different from each previous embodiment are demonstrated so that the description which overlaps, and the same code | symbol is attached | subjected and demonstrated about the same component as each previous embodiment. FIG. 21: is a figure which shows the whole structure of the exposure apparatus (substrate processing apparatus) of 4th Embodiment. The exposure apparatus U3, U3a, U3b of each previous embodiment was the structure using the cylindrical mask M hold | maintained by the rotatable cylindrical drum 21 (or 21a). In the exposure apparatus U3c of the fourth embodiment, a mask holding mechanism having a mask stage 110 that holds a flat reflective mask MB and moves in the X direction along the XY plane during scanning exposure ( 11b) is provided.

In the exposure apparatus U3c of 4th Embodiment, the mask holding mechanism 11b has the mask stage 110 holding the flat reflective mask MB, and the mask stage 110 center surface CL. And a moving device (not shown) for scanning movement along the X direction in a plane perpendicular to the plane.

Since the mask surface P1 of the mask MB of FIG. 21 is a plane substantially parallel to the XY plane, the main light ray of the projection light beam EL2 reflected from the mask MB becomes perpendicular to the XY plane. For this reason, the chief ray of illumination light beam EL1 from illumination optical systems IL1-IL6 illuminating each illumination area | region IR1-IR6 on the mask MB also with respect to an XY plane via the polarization beam splitter PBS. It is arranged to be vertical.

Moreover, when the chief ray of the projection light beam EL2 reflected from the mask MB becomes perpendicular to the XY plane, the first deflection member 70 included in the first optical system 61 of the projection optical module PLM is made. The first reflection surface P3 reflects the projection light beam EL2 from the polarization beam splitter PBS, and passes the reflected projection light beam EL2 through the first lens group 71 so as to pass the first concave mirror 72. ) Is an angle to enter. Specifically, the first reflecting surface P3 of the first deflection member 70 is substantially set to 45 ° with respect to the second optical axis BX2 (XY surface).

Also in the fourth embodiment, similarly to FIG. 2, the illumination region IR2 (and IR4, IR6) is viewed from the center point of the illumination region IR1 (and IR3, IR5) on the mask MB when viewed in the XZ plane. The linear distance in the X direction to the center point of the second projection area PA2 from the center point of the projection area PA1 (and PA3, PA5) on the substrate P along the support surface P2 of the substrate support drum 25. (And PA4, PA6)) is set substantially the same as the circumferential length distance to the center point.

Also in the exposure apparatus U3c of FIG. 21, the lower control apparatus 16 controls the moving apparatus (scanning exposure linear motor, a micromotor, etc.) of the mask holding mechanism 11, and rotation of the board | substrate support drum 25 In synchronization with the driving mask stage 110. In the exposure apparatus U3c of FIG. 21, after scanning exposure by synchronous movement of the mask MB in the + X direction, an operation (rewinding) of returning the mask MB to the initial position in the -X direction is necessary. . Therefore, in the case where the substrate supporting drum 25 is continuously rotated at a constant speed and the substrate P is continuously sent at a constant velocity (main velocity Vp), pattern exposure is performed on the substrate P during the rewinding operation of the mask MB. It is not performed, but the pattern for panels is formed in space | interval with respect to the conveyance direction of the board | substrate P. However, in practice, since the speed of the substrate P (scanning speed Vp) and the speed of the mask MB are assumed to be 50 to 100 mm / s at the time of scanning exposure, the mask stage at the time of rewinding the mask MB is assumed. When the 110 is driven at a maximum speed of, for example, 500 to 1000 mm / s, the margin of the conveyance direction between the patterns for panels formed on the substrate P can be narrowed.

Next, the relationship between the projection image surface Sm of the pattern of the mask in the exposure apparatus U3c of 4th Embodiment, and the exposure surface Sp on the board | substrate P is demonstrated with reference to FIG. FIG. 22 is a relation between the movement of the projection image surface Sm of the pattern of the mask and the movement of the exposure surface Sp of the substrate P, and the projection image surface Sp and the exposure surface Sp described in FIG. It is equivalent to reversing the relationship. That is, in FIG. 22, the pattern image formed in the projection image surface Sm of planar shape (curvature radius is infinite) is transferred on the exposure surface Sp which is curvature radius Rp.

Since the mask M is a plane, the projection image surface Sm (best focus surface) is also a plane. Therefore, the projection image surface Sm in FIG. 22 corresponds to the reference surface HP moving at the speed V shown in FIG. On the other hand, the exposure surface Sp on the board | substrate P becomes a cylindrical surface (circular arc in a ZX plane) of curvature radius Rp similarly to FIG.

Also in the present embodiment, when the angular velocity of the substrate holding drum 25 (exposure surface Sp) is ωp, the projection image surface Sm and the exposure surface Sp are in contact with each other at the position of the surface KS as in FIG. The position Xp in the X direction of the point Cp2 moved after the time t has elapsed along the exposure surface Sp whose radius Cp is the radius Rp is obtained by Xp = Rp · sin (ωp · t). Here, ωp · t is the rotation angle θp of the exposure surface Sp after elapse of time t from the contact point Cp as the origin. On the other hand, the position Xm of the point Cp0 which the contact point Cp of the projection image surface Sm and the exposure surface Sp moved after time t passed from the origin along the flat projection image surface Sm is Xm = V * t ( However, since it is represented by V = Vm, similarly to each of the foregoing embodiments, a projection error (deviation amount or image displacement amount) occurs between the projection image surface Sm and the exposure surface Sp.

When the projection error (deviation amount or image displacement amount) is set to the shift amount Δ2, the shift amount Δ2 is obtained by Δ2 = Xm-Xp, and Δ2 = V · t−Rp · sin (θp). The characteristic of this shift amount (DELTA) 2 is the same as the graph of the shift amount (DELTA) 2 in FIG. 8A, and gives a slight difference to the moving speed V of the projection image surface Sm, and the main speed Vp of the exposure surface Sp, and a previous angle. As in the embodiment, the exposure width of the projection area PA that can be used at the time of scanning exposure can be enlarged. For that purpose, it is necessary to make the speed (main velocity) of the surface with the smallest curvature radius among projection image surface Sm and exposure surface Sp relatively large. In the present embodiment, the mask MB such that the speed V (main velocity Vm) of the projection image surface Sm is made smaller by about the change rate α illustrated in FIG. 8C with respect to the main velocity Vp of the exposure surface Sp, for example. Is set slightly smaller than the reference speed V determined based on the projection magnification β.

Here, in the case of the exposure apparatus U3c of this embodiment, the formula of F (x) of 1st Embodiment is substituted by the formula of F '(x) below.

[Equation 4]

Here, the exposure apparatus U3c applies this expression F '(x) to the expression of the above-mentioned first embodiment, and can obtain the same effect as each said embodiment by satisfying the said relationship.

Moreover, as for the exposure apparatus of this embodiment, the one hold | maintained by the curved surface among the mask holding mechanism and the board | substrate support mechanism becomes a 1st support member, and the one supported by a curved surface or a plane becomes a 2nd support member.

As described above, in each embodiment, a cylindrical or planar mask M is used, but the DMD (digital mirror device), SLM (spatial light modulation device), etc. are controlled based on CAD data to correspond to the pattern. The same effect can be obtained even in a maskless exposure method in which the light distribution is projected onto the exposure surface Sp through the projection optical system (which may include a micro lens array).

Moreover, in each embodiment, the curvature radius of the projection image surface Sm of the pattern and the exposure surface Sp of the board | substrate P is compared, and at the time of scanning exposure, the one whose surface radius of curvature Sm and surface Sp is smaller The exposure width available for scanning exposure can be enlarged by increasing the peripheral speed relatively slightly or by slightly decreasing the peripheral speed (or the linear movement speed) of the larger curvature radius among the surface Sm and the surface Sp. Can be. The degree to which the slight difference in the relative main speed (or the linear movement speed) is made may vary depending on the phase displacement amount Δ (differential amount Δ, deviation amount Δ1, Δ2) and resolution Rs. For example, in the evaluation method by the evaluation values Q1 and Q2 of FIG. 19, the resolution Rs was 2.09 mu m, but this is determined by the numerical aperture NA of the projection optical system PL, the exposure wavelength λ, and the process constant k. . In practice, the minimum dimension (line width) of the pattern exposed on the substrate P is determined by the pattern formed on the mask M and the projection magnification β. If the minimum actual size (solid line width) may be 5 µm in the display panel pattern to be formed on the substrate P, the value of the actual line width is set to the resolution Rs to allow the range of the allowed phase displacement amount Δ. What is necessary is to find the main speed difference (change rate (alpha) etc.) which becomes internal. That is, according to the resolution Rs determined by the configuration NA, λ of the exposure apparatus, or the minimum dimension of the pattern to be transferred onto the substrate P, the rate of change α of the main speed difference for expanding the exposure width is determined. .

As mentioned above, the following scanning exposure methods are implemented by using the exposure apparatus shown in each embodiment. That is, the flexible substrate P, which is supported on the surface formed in one surface of the masks M and MB curved in a cylindrical shape with a predetermined radius of curvature in a cylindrical or planar shape through the projection optical system PL (PLM). While projecting onto the surface (exposure surface Sp) of &lt; Desc / Clms Page number 11 &gt; and moving the mask M at a predetermined speed along the curved one surface, it is predetermined along the surface Sp of the substrate supported in a cylindrical or planar shape. The curvature of the projection image surface Sm in which the projection image of the pattern by a projection optical system is formed in the best focus state, when moving the board | substrate P at the speed of and scanning scanning exposure of the pattern by a projection optical system on a board | substrate. The radius of curvature of the surface (exposure surface) Sp of the substrate P supported by the radius Rm (including Rm = ∞) and the cylindrical or planar shape is Rp (including Rp = ∞) and the mask M , MB) moves the pattern image along the projection image surface Sm. When Vm and a predetermined speed along the surface (exposure surface) Sp of the substrate P are set to Vp, Vm> Vp is set when Rm <Rp, and Vm <Vp when Rm> Rp. do.

[The fifth embodiment]

FIG. 23: is a figure which shows the whole structure of the exposure apparatus which concerns on 5th Embodiment. The processing apparatus U3d corresponds to the processing apparatus U3 shown in FIG. 1 and FIG. 2. Hereinafter, the processing apparatus U3d will be referred to as an exposure apparatus U3d. This exposure apparatus U3d has the mechanism which replaces the mask M. As shown in FIG. Since the exposure apparatus U3d has the same structure as the above-described exposure apparatus U3, the common structure will not be described in principle.

The exposure apparatus U3d includes a mask holding mechanism 11, a substrate support mechanism 12, illumination, in addition to the above-described driving rollers R4 to R6, edge position controller EPC3, and alignment microscopes AM1 and AM2. An optical system (light system) IL, a projection optical system PL, and a lower control device 16 are included.

The lower control device 16 controls each unit of the exposure apparatus U3d to cause each unit to execute a process. The lower control device 16 may be part or all of the upper control device 5 of the device manufacturing system 1. In addition, the lower control device 16 may be controlled by the upper control device 5 and may be a device separate from the upper control device 5. The lower control apparatus 16 includes a computer, for example. In the present embodiment, the lower control device 16 uses a mask (for example, a bar code, a magnetic storage medium, or an IC tag that can store information) mounted on the mask M. The reading device 17 which reads the information regarding M) and the measuring device 18 which measures the shape, the dimension, a mounting position, etc. of the mask M are connected.

Moreover, although the mask holding mechanism 11 hold | maintained the mask M (mask pattern surface by a high reflection part and a low reflection part) of a cylindrical body by the mask holding drum 21, it is not limited to this structure, Same as the first embodiment. In the present embodiment, when referred to as the mask M or the cylindrical mask, not only the mask M but also the mask holding drum 21 (mask M and mask holding drum 21) in a state where the mask M is held. And an assembly of a fruit).

The board | substrate support mechanism 12 supports the board | substrate P exposed by the light from the pattern of the mask M irradiated with illumination light along the curved surface or plane. The board | substrate supporting drum 25 is formed in the cylindrical shape which has the outer peripheral surface (circumferential surface) used as the curvature radius Rfa centering on the 2nd axis AX2 extending in a Y direction. Here, the first axis AX1 and the second axis AX2 are parallel to each other, include the first axis AX1 and the second axis AX2, and have a plane parallel to both the center plane CL. ). The center plane CL is a plane determined by two straight lines (in this example, the first axis AX1 and the second axis AX2). A part of the circumferential surface of the board | substrate support drum 25 becomes the support surface P2 which supports the board | substrate P. As shown in FIG. That is, the board | substrate support drum 25 supports and conveys the board | substrate P by winding the board | substrate P on the support surface P2. Thus, the board | substrate supporting drum 25 has the curved surface (outer peripheral surface) curved by the constant radius (curvature radius Rfa) from the 2nd axis AX as a predetermined axis, and a part of board | substrate P is wound by the outer peripheral surface, and is made Rotate around 2 axes (AX2). The 2nd drive part 26 is connected to the lower control apparatus 16, and rotates the board | substrate support drum 25 using the 2nd axis | shaft AX2 as a rotation center axis.

The pair of air turn bars ATB1 and ATB2 are provided on the upstream side and the downstream side of the conveyance direction of the substrate P with the substrate supporting drum 25 interposed therebetween. The pair of air turn bars ATB1 and ATB2 are provided on the surface side of the substrate P, and are disposed on the lower side than the support surface P2 of the substrate support drum 25 in the vertical direction (Z direction). . The pair of guide rollers 27 and 28 are provided on the upstream side and the downstream side of the conveyance direction of the board | substrate P, respectively, between a pair of air turn bars ATB1 and ATB2. The pair of guide rollers 27 and 28 guide the substrate P conveyed from the driving roller R4 by one of the guide rollers 27 to the air turn bar ATB1, and the other guide rollers ( 28 guides the substrate P conveyed from the air turn bar ATB2 to the driving roller R5.

Therefore, the board | substrate support mechanism 12 guides the board | substrate P conveyed from the drive roller R4 to the air turn bar ATB1 by the guide roller 27, and passed the air turn bar ATB1. The substrate P is introduced into the substrate supporting drum 25. The board | substrate support mechanism 12 rotates the board | substrate support drum 25 by the 2nd drive part 26, and the board | substrate P introduce | transduced into the board | substrate support drum 25 is the support surface of the board | substrate support drum 25. While supporting at P2, it conveys toward the air turn bar ATB2. The board | substrate support mechanism 12 guides the board | substrate P conveyed to the air turn bar ATB2 to the guide roller 28 by the air turn bar ATB2, and the board | substrate which passed the guide roller 28 ( P) is guided to the drive roller R5.

At this time, the lower control apparatus 16 connected to the 1st drive part 22 and the 2nd drive part 26 rotates the mask holding drum 21 and the board | substrate support drum 25 synchronously by predetermined rotation speed ratio. Thereby, the image of the mask pattern formed in the mask surface P1 of the mask M is made to the surface (surface curved along the circumferential surface) of the board | substrate P wound by the support surface P2 of the board | substrate support drum 25. It is successively repeatedly projected and exposed.

As shown in FIG. 2, the exposure apparatus U3d includes alignment microscopes GS1 and GS2 for detecting alignment marks or the like previously formed in the mask M on the outer circumferential surface outside of the mask M. As shown in FIG. Moreover, exposure apparatus U3d has encoder heads EH1 and EH2 for detecting the rotation angles, etc. of the mask M and the mask holding drum 21, and the like. These are arrange | positioned along the circumferential direction of the mask M (or the mask holding drum 21). The encoder heads EH1 and EH2 are mounted at both ends in the direction of the first axis AX1 of the mask holding drum 21, for example, and are centered around the first axis AX1 together with the mask holding drum 21. The scales (lattice-shaped patterns provided by carving at a constant pitch in the circumferential direction) provided on the outer circumferential surface of the rotating scale disk SD are read. In addition, the exposure apparatus U3d measures the micro displacement in the radial direction of the outer circumferential surface (mask surface P1) of the rotating mask M, and focus shifts of the mask surface P1 with respect to the projection optical system PL. The foreign matter inspection apparatus CD which detects the foreign material adhering on the focus measuring apparatus AFM which detects this, and the mask surface P1 can be provided. Although these can be arrange | positioned in arbitrary orientations of the periphery of the outer peripheral surface of the mask M, it is good to provide in the direction which avoided the insertion and removal movement space of the mask M at the time of mask replacement.

In addition, the scale reading position of the encoder head EH1 is the center position in the circumferential direction of the odd illumination regions IR1, IR3, IR5 on the mask M on the XZ plane orthogonal to the first axis AX1. It is provided so as to coincide with the intersection point Q1 in FIG. 5 or FIG. 7, and the scale readout position of the encoder head EH2 is in the circumferential direction of the even illumination regions IR2, IR4, IR6 on the mask M in the XZ plane. It is installed to match the center position of the. In addition, the scale measured by the encoder heads EH1 and EH2 may be formed together with the mask pattern on the outer circumferential surfaces of both ends of the mask holding drum 21 (mask M).

The exposure apparatus U3d includes encoder heads EN1, EN2, EN3, EN4 for detecting the rotation angle of the substrate support drum 25, etc., in addition to the alignment microscopes AM1, AM2 for detecting the marks on the substrate P and the like. Has) These are disposed along the circumferential direction of the substrate supporting drum 25. The encoder heads EN1, EN2, EN3, EN4 are mounted at both ends in the direction of the second axis AX2 of the substrate support drum 25, for example, and are mounted together with the substrate support drum 25. A grid-like pattern provided by engraving on the outer circumferential surface of the scale disk rotating around AX2) or on the outer circumferential surface of both ends in the direction of the second axis AX2 of the substrate supporting drum 25 (engraved at a constant pitch in the circumferential direction). ).

Moreover, the scale reading position of encoder head EN1 is provided so that it may correspond to the position of the circumferential direction of the observation visual field of alignment microscope AM1 in the XZ plane orthogonal to 2nd axis AX2, and encoder head EN4. The scale readout position is provided so as to coincide with the position in the circumferential direction of the observation field of the alignment microscope AM2 on the XZ plane. Similarly, the scale readout position of the encoder head EN2 is provided so as to coincide with the center position in the circumferential direction of the odd projection areas PA1, PA3, PA5 on the substrate P, and the scale readout of the encoder head EN3. In the XZ plane, the position is provided so as to coincide with the center position in the circumferential direction of the even-numbered projection regions PA2, PA4, and PA6 on the substrate P.

In addition, as shown in FIG. 2, the exposure apparatus U3d is provided with an exchange mechanism 150 for exchanging the mask M. The exchange mechanism 150 replaces the mask M held by the exposure apparatus U3d with another mask M having the same radius of curvature Rm, or another mask M having a different radius of curvature Rm. can do. When replacing with the mask M with the same curvature radius Rm, the exchange mechanism 150 may remove and replace only the mask M from the mask holding drum 21, and may replace and replace the mask M for every mask holding drum 21; May be removed from the exposure apparatus U3d and replaced. When the curvature radius Rm exchanges with another mask M, the exchange mechanism 150 can remove the mask M from the exposure apparatus U3d for every mask holding drum 21, and may replace. Even when the mask M and the mask holding drum 21 are integrated, the exchange mechanism 150 replaces both of them integrally. The exchange mechanism 150 may be any structure as long as the mask M or the assembly of the mask M and the mask holding drum 21 can be attached to the exposure apparatus U3d and detached from the exposure apparatus U3d. .

By providing the exchange mechanism 150, the exposure apparatus U3d can automatically mount the mask M from which diameter differs, and can expose the mask pattern to the board | substrate P. FIG. For this reason, the device M with the exposure apparatus U3d 1 can use the mask M of a suitable diameter according to the dimension of the device (display panel) to manufacture. As a result, the device manufacturing system 1 can suppress generation | occurrence | production of the unused blank part of the board | substrate P, can suppress waste of the board | substrate P, and can reduce the manufacturing cost of a device. Thus, since the exposure apparatus U3d provided with the exchange mechanism 150 has a large degree of freedom of selection of the device (display panel) dimension which the device manufacturing system 1 manufactures, the exposure apparatus itself changes excessively, for example. There is an advantage that it is possible to efficiently manufacture display panels of different inch sizes without requiring equipment investment.

When the mask M is replaced with a different diameter M, the curvature of the mask surface P1 and the position in the Z direction of the first axis AX1 and the like are different between the masks M in both directions. The relationship between the EL1 and the mask M and the projection luminous flux EL2, the position of the illumination region IR on the mask M and the degree of non-telecentricity of the chief ray of the illumination luminous flux EL1, etc. It may change between different masks, or the positional relationship between encoder heads EH1 and EH2 and scale disk SD may differ.

Accordingly, when the mask M of the exposure apparatus U3d is replaced with a mask M having a different diameter, the image of the mask pattern formed on the mask surface P1 of the mask M is suitable for the substrate P. In the case of the multi-lens system, the associated mechanism in the exposure apparatus U3d and the like so as to connect the mask pattern images shown in each of the plurality of projection areas PA1 to PA6 with good accuracy. You need to adjust the relevant part.

In this embodiment, when replacing with the mask M from a different diameter, each part of the exposure apparatus U3d is used, for example, using the lower control apparatus 16 as an adjustment control part (adjustment part), specifically, illumination. The position of at least a part of the optical member constituting the optical system IL or the projection optical system PL is changed, or a part of the optical member is switched to a member having different characteristics. By doing in this way, after the mask M is replaced, the exposure apparatus U3d can expose suitably and favorably with respect to the board | substrate P. As shown in FIG. That is, the exposure apparatus U3d can appropriately and satisfactorily realize the exposure having a large degree of freedom with respect to the size of the device, that is, the exposure using the mask M having a size different in diameter. Next, the outline of the procedure of replacing the mask M used by exposure apparatus U3d with the mask M from which diameter differs, or another mask M of the same diameter, and the adjustment of exposure apparatus U3d specific An example is demonstrated.

24 is a flowchart illustrating a procedure when the mask used by the exposure apparatus is replaced with another mask. 25 is a diagram illustrating a relationship between the position of the viewing area on the mask side of the odd-numbered first projection optical system and the position of the viewing area on the mask side of the even-numbered second projection optical system. Fig. 26 is a perspective view showing a mask having an information storage unit on the surface which stores mask information. 27 is a schematic diagram of an exposure condition setting table in which exposure conditions are described.

When replacing the mask M used by the exposure apparatus U3d with the mask M of a different diameter, the lower control apparatus 16 shown in FIG. 23 starts an exchange operation | movement of the mask M in step S101. do. Specifically, the lower control device 16 drives the exchange mechanism 150 to remove the mask M currently mounted on the exposure apparatus U3d, and then drives the exchange mechanism 150 to replace the replacement object. The mask M is attached to the exposure apparatus U3d. In this exchange, the exchange mechanism 150 removes the mask holding drum 21 having the mask M for each shaft serving as the first axis AX1, and the mask M and the mask holding drum ( 21 is mounted on the exposure apparatus U3d. In that case, when the scale disk SD is mounted coaxially with the 1st axis | shaft AX1 at the both ends of the mask holding drum 21, it is good to replace | exchange for every scale disk SD.

In this embodiment, when replacing with the mask M from which a diameter differs, the mask holding drum 21 of the mask holding drum 21 is based on the diameter of the mask M (mask surface P1) newly attached to exposure apparatus U3d. The shaft support position in the Z axis direction of the first axis AX1 which is the rotation center axis is changed. For this reason, the exposure apparatus U3d has the mechanism which can move the bearing apparatus which rotatably supports the mask holding drum 21 to Z-axis direction.

This bearing device is a bearing (a contact type such as a ball bearing, a needle bearing or the like, or an air bearing, etc.) for supporting a shaft of each of the shafts serving as the first shafts AX1 protruding to both ends of the mask holding drum 21 in a rotatable manner. Non-contact type). The contact bearing is sandwiched between an inner ring fixed to the shaft of the mask holding drum 21, an outer ring fixed to the main body side of the exposure apparatus U3d, and an inner ring and the outer ring. Consists of a ball or needle.

For smooth mask replacement, the outer ring of the contact bearing is removed from the bearing device on the main body side of the exposure apparatus U3d with both the inner ring and the outer ring of the contact bearing mounted on the shaft side of the mask holding drum 21. It is good to have a structure. In addition, the bearing device on the main body side of the exposure apparatus U3d has a Z drive for adjusting the inclination in the YZ plane so that the first axis AX1 (shaft) is parallel to the second axis AX2 (Y axis). In addition to the mechanism, the X-axis driving mechanism is provided for adjusting the inclination in the XY plane such that the first axis AX1 (shaft) is also parallel to the center plane CL.

FIG. 25 shows a state when the mask M held on the mask holding drum 21 is replaced with the mask Ma held on the mask holding drum 21a having a smaller diameter than these. The mask M has a radius of curvature Rm, and the mask Ma has a radius of curvature Rma (Rma &lt; Rm). IRa of FIG. 25 is the viewing area (lighting) of the mask M side of 1st projection optical system (1st projection optical system PL1 shown in FIG. 23, 3rd projection optical system PL3, and 5th projection optical system PL5). The illumination light beam EL1 from the optical system IL corresponds to the odd illumination regions IR1, IR3, IR5 irradiated to the mask M, and IRb is a second projection optical system (second shown in FIG. 23). The illumination light beam EL1 from the illumination region EL system from the mask M side of the projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 is applied to the mask M. It corresponds to the even illumination region IR2, IR4, IR6 irradiated).

In this embodiment, before and after replacing the mask M with the mask Ma, the position of the viewing area IRa of the first projection optical system in the Z axis direction, and the viewing area of the second projection optical system in the Z direction. It is preferable that the position of (IRb) does not change. The Z-axis direction is between the rotation center axis (first axis AX) of the mask M (mask holding drum 21) and the rotation center axis (second axis AX2) of the substrate support drum 25. It is orthogonal to both, and is a direction along the center plane CL. Adjustment of the illumination optical system IL and the projection optical system PL by ensuring that the spatial arrangement relationship between the viewing area IRa and the viewing area IRb in the Z-axis direction does not change before and after the replacement of the mask M, Position adjustment of various measuring instruments (encoder heads EH1, EH2, alignment microscopes GS1, GS2, etc.), or the change of the parts related to these, etc. can be suppressed to the minimum.

This embodiment assumes a multi-lens system as shown in FIG. 23, but projects the pattern in the illumination area IR set at one location in the circumferential direction of the outer circumferential surface of the mask M into the projection area PA. In the case of the exposure apparatus which arrange | positions a single or multiple projection optical system in a Y direction, it is good to arrange all centers of the circumferential direction of the illumination area | region IR and the projection area | region PA on the center plane CL. . In such an exposure apparatus, when the mask M having a radius (curvature radius) Rm is replaced with a cylindrical mask Ma having a radius Rma (Rma <Rm), the rotational center (shaft) of the mask Ma has a radius in the Z direction. What is necessary is just to drive Z a bearing apparatus so that a position shift may be carried out by difference Rma-Rm.

However, in the multi-lens system of the present embodiment, one of two locations in the circumferential direction on the outer circumferential surface of the mask M is in the field of view IRa (the odd projection area PA) of the odd-numbered projection optical system. Since the phosphorus surface is located, and the other field of view area IRb (the surface of water conjugated with the even projection area PA) is located on the other side, the radius difference Rma-Rm is simply Even if the position of the mask Ma is changed in the Z direction, good focus accuracy (or good joint position accuracy) may not be obtained depending on the degree of the radius difference. Therefore, in the present embodiment, the outer peripheral surface of the cylindrical mask to be exchanged is exactly coincident with both the viewing area IRa (water plane) of the odd-numbered projection optical system and the viewing area IRb (water plane) of the even-numbered projection optical system. Z drive the bearing unit.

In the above embodiment, in the exposure apparatus of the viewing area IRa of the odd-numbered projection optical systems PL1, PL3, PL5 and the viewing area IRb of the even-numbered projection optical systems PL2, PL4, PL6. The position in the Z direction of the cylindrical mask can be changed in accordance with the diameter of the cylindrical mask to be mounted so that the position (each direction of XYZ) does not change. In this way, if the positions of the viewing areas IRa and IRb are not changed, there is an advantage that the change point and the adjustment point on the device side with respect to the cylindrical mask having different diameters are at least reduced. However, in that case, drive systems, such as a motor which rotates a cylindrical mask, and an actuator which slides in an XYZ direction, will also move to Z direction as a whole, and may have the stability of a drive system.

Therefore, in order to obtain the advantage of maintaining the stability of the drive system, the Z position (or X position) of the rotation center (first axis AX1, shaft) of the cylindrical mask in the exposure apparatus is not changed, and the diameter is different. You can also wear a cylindrical mask. In this way, in addition to the advantage of maintaining the stability of the drive system, the characteristic effect is that only the cylindrical cylindrical mask (the radius of the outer circumferential surface thereof) mounted on the outside with respect to the rotation axis of constant diameter is obtained. In order to cope with this, on the exposure apparatus side, the adjustment of the focus position of each projection optical system is required, and the adjustment of the focus position with respect to the cylindrical masks of various alignment sensors (microscopes), the field of view IRa, IRb, and the detection field of view of the alignment sensor The position in the XYZ direction, the inclination and the degree of convergence of the chief ray of the illumination light beam EL1, or the interval between the odd projection optical systems PL1, PL3, PL5 and the even projection optical systems PL2, PL4, PL6 It is preferable to set it as the structure which can be adjusted.

By the way, in this embodiment, as shown in FIG. 23, the mask M (and mask holding drum 21) is taken out from a bearing apparatus by the exchange mechanism 150, and the mask Ma prepared separately. (With the mask holding drum 21a) is attached to the bearing device. When taking out the mask M and attaching the mask Ma, when the focus measuring device AFM and the foreign material inspection device CD in FIG. 23 interfere with the mask or a part of the exchange mechanism 150 spatially, Temporarily evade them. 23, the projection optical system PL and the illumination optical system IL are positioned in the -Z direction with respect to the bearing device supporting the first axis AX1, and the alignment microscope GS1, in the -X direction. Since GS2) is located, the direction in which the mask M and the mask Ma can be taken out and taken in is the + Z direction, the + X direction, or the ± Y direction (direction of the first axis AX1) with respect to the bearing device. .

When the mask M is replaced with a mask Ma having a different diameter, the process proceeds to step S102. The lower control device 16 exchanges information about the mask Ma mounted on the exposure apparatus U3d after the replacement (exchange). Post mask information). The mask information after exchange includes various specifications due to the mask, such as dimensions such as diameter, circumferential length, width, thickness, tolerance, type of pattern, roundness, eccentricity or flatness of the mask surface P1. And correction values.

For example, as shown in FIG. 26, these pieces of information are stored in the information storage unit 19 provided on the surface of the mask holding drum 21a. The information storage unit 19 is, for example, a bar code, a hologram, an IC tag, or the like. In this embodiment, although the information storage part 19 is provided in the surface of the mask holding drum 21a, you may provide in the mask Ma with the device pattern. In this embodiment, when referring to the surface of a cylindrical mask, both the surface of the mask Ma and the surface of the mask holding drum 21a shall be included. In FIG. 26, although the information storage part 19 is provided in the cylindrical outer peripheral surface of the mask holding drum 21a, you may provide in the end surface part of the axial direction of the mask holding drum 21a.

The lower control device 16 acquires the exchanged mask information read by the reading device 17 from the information storage unit 19. The reading device 17 can use a bar code reader when the information storage unit 19 is a bar code, an IC tag reader or the like when it is an IC tag. The information storage unit 19 may be a portion in which information has been previously written in the mask Ma.

The mask information after replacement may be included in exposure information regarding exposure conditions. Exposure information is information required when the exposure apparatus U3d performs exposure processing to the board | substrate P, such as the information of the board | substrate P which is exposure object, the scanning speed of the board | substrate P, and the power of illumination light beam EL1. In the present embodiment, after exchanging the mask information to the exposure information, various adjustments and corrections are made, and the recipe conditions and parameters on the device operation during exposure are set. For example, the exposure information is stored in the exposure information storage table TBL shown in FIG. 27, and is stored in the storage unit of the lower control device 16 or the storage unit of the upper control device 5. The lower control device 16 reads the exposure information storage table TBL from the storage unit described above, and acquires post-exchange mask information. The mask information after exchange may be input via an input device (keyboard or mouse, etc.) to the lower control device 16 or the upper control device 5. In this case, the lower control device 16 obtains post-exchange mask information from the above-described input device. When the lower control device 16 acquires the mask information after the replacement, the process proceeds to step S103.

In step S103, the lower control device 16 collects or calculates data relating to the portion requiring adjustment of the exposure apparatus U3d and the conditions necessary for the adjustment in accordance with the diameter of the mask Ma after replacement. As a part which needs adjustment, the position in the Z-axis direction of the mask M, the illumination optical system IL, the projection optical system PL, the rotational speed of the mask M, and exposure width (lighting area IR), for example. Width in the circumferential direction), position or posture of the encoder heads EH1 and EH2, position or posture of the alignment microscopes GS1 and GS2, and the like. In addition, in this embodiment, since the rotation center axis (1st axis AX1a) of the mask Ma after replacement shifts from the rotation center position of the mask M before replacement | exchange in the Z-axis direction, the mask Ma is It is necessary to adjust (position shift) the mounting position in the exposure apparatus main body of a drive source in step S103 so that the output shaft of the drive source (for example, an electric motor) which drives a may be connected with the shaft of the mask Ma. For this reason, the exposure apparatus U3d is attached to the mask holding | maintenance mechanism 11 which rotates around 1st axis | shaft AX1 as a predetermined | prescribed axis | shaft, and replace | exchanges one of the several masks with mutually different diameters. According to the diameter of the mask Ma used, it has an adjustment part which adjusts the distance of at least 1st axis | shaft AX1 and a board | substrate support mechanism. This adjustment part sets the space | interval of the outer peripheral surface of the mask attached to the mask holding mechanism 11, and the board | substrate P supported by the board | substrate support mechanism within a predetermined permissible range.

As mentioned above, in this embodiment, the position of the illumination visual field IR in a Z-axis direction is made so that it may not change before and after replacing with the mask Ma from which diameter differs. For this reason, for example, in step S101, the lower control device 16 only replaces the mask Ma having a different diameter. If the mask information is obtained after the replacement in step S102, the mask Ma is based on this. The position of the illumination field IR in the Z-axis direction is controlled to the same position as before the exchange. In addition, before replacing with the mask Ma, the lower control device 16 obtains the information of the mask Ma from the exposure information storage table TBL, for example, and based on this, the mask Ma is converted into the mask Ma. At the timing of replacement, the position of the illumination visual field IR in the Z-axis direction of the mask Ma may be controlled at the same position as before replacement. Next, an example of the adjustment in step S103 will be described.

FIG. 28 is a diagram schematically showing the behavior of the illumination light beam and the projection light beam between masks having different diameters based on the previous FIG. 5. As described above, when the position in the Z-axis direction of the illumination field IR does not change before and after the replacement of the mask M, as shown in FIG. 25, the mask M and the mask holding drum 21. ) Position in the Z axis direction of the rotation center axis, that is, the first axis AX1. Specifically, the rotation center axis AX1a of the mask Ma having a smaller diameter is the second axis that is the rotation center axis of the substrate supporting drum 25 than the first axis AX1 of the mask M having a large diameter. Access to (AX2).

Even when the mask Ma after replacement is smaller in diameter than the mask M before replacement, as shown in FIG. 28, it is the center of the circumferential direction of the illumination region IR on the mask Ma (mask surface P1a). It is assumed that the absolute position (unique position in the exposure apparatus) within the XYZ coordinates of the intersection Q1 is not changed. For this reason, as shown in FIG. 28, the illumination conditions of the illumination light beam EL1 set with respect to the mask M before replacement | exchange, ie, each main light ray of illumination light flux EL1 in XZ plane is 1 of radius (curvature radius) Rm. When the illumination light beam EL1 is irradiated to the mask Ma having a small diameter while maintaining the conditions such as being inclined toward the point Q2 of / 2, the projection light beam EL2a reflected by the illumination region IR on the mask Ma ), The chief rays of light are shifted from the state parallel to each other, the state is divergent in the XZ plane, and the advancing direction also shifts.

For this reason, it is necessary to adjust illumination light beam EL1 from illumination optical system IL to illumination light beam EL1 suitable for mask Ma. Therefore, in step S103, the main lens of the illumination light beam EL1 changes the state of the magnification telecentric by changing the cylindrical lens 54 (see FIG. 4) of the illumination optical system IL to one of a different power. Adjust to converge toward the position of 1/2 of the radius Rma of the mask Ma in the XZ plane. In addition, the illumination light beam EL1 passing through the intersection Q1 is used to determine the state of the axial telecentricity at the intersection Q1 which is the center of the viewing area IRa (lighting area IR) by using an unillustrated prism (not shown). ) Is adjusted so that the extension of the chief ray of light passes through the central axis AX1a of the mask Ma.

Moreover, the angle of the reflected light beam from the mask Ma, ie, the projection light beam EL2a, is adjusted. In this case, since the axial angle (angle in the XZ plane of the chief ray) between the illumination light flux EL1 and the projection light flux EL2a changes depending on the diameter (center position of the chief ray) of the mask Ma, it is a common optical path. The angle of the projection light beam EL2a can be adjusted by arranging a polarization prism (a wedge-shaped prism in which the incident surface and the exit surface are non-parallel) between the polarizing beam splitter PBS and the mask Ma.

Moreover, when adjusting the angle of only projection light beam EL2a, the polarizing member (for example, 1st reflective surface P3 of the 1st deflection member 70 or 2nd deflection member) which the projection optical system PL has You may adjust the angle of the 4th reflective surface P6 of (80). By doing in this way, when replacing with the mask Ma with a different diameter (in this example, the diameter of the mask Ma after replacement | exchange is smaller than before replacement | exchange), each chief ray of the projection light beam EL2a reflected by the mask Ma was reflected. Can be parallel to each other in the XZ plane. In other words, also for the mask Ma having a different diameter after replacement, the illumination optical system IL is provided with a mask (so that the projection light beam EL2a reflected by the illumination region IR of the mask Ma is in a telecentric state. Illumination conditions of illumination light beam EL1 irradiated to illumination area | region IR on Ma) are adjusted.

When the above-described adjustment is performed, for example, a lens in which one of a plurality of cylindrical lenses 54 having different powers is provided in the optical path so as to be interchangeable in the illumination optical module ILM of the illumination optical system IL. An exchange mechanism is installed. By the instruction from the lower control device 16, the lens replacement mechanism may be controlled to be replaced with the cylindrical lens 54 having the most suitable power. At this time, the lower control apparatus 16 changes the cylindrical lens 54 based on the information of the diameter of the mask Ma after replacement. Further, an actuator for adjusting the angle (and the position in the XZ plane) of the polarization member or the polarization member in the projection optical module PLM between the aforementioned polarizing beam splitter PBS and the mask Ma is provided as a lower control device ( 16), the optical characteristics of the projection light beam EL2 reflected by the mask Ma may be adjusted. Also in this case, the lower control apparatus 16 adjusts the angle of a polarization prism or a polarizing member based on the information of the diameter of the mask Ma after replacement. In addition, the operator of the exposure apparatus U3d may perform the replacement of the cylindrical lens 54 and the adjustment of the polarization prism.

FIG. 29 is a diagram illustrating a change in arrangement of the encoder head and the like when replacing with a mask having a different diameter. FIG. In the adjustment in step S103, if necessary, the foreign material inspection device that further detects the encoder heads EH1 and EH2, the alignment microscopes GS1 and GS2, the focus measuring device AFM on the mask M side, and the foreign matter. (CD) is adjusted. As shown in FIG. 29, for example, the mask M and the mask holding drum 21 having a radius (curvature radius) Rm are replaced by the mask Ma and the mask holding drum 21a having a small radius Rma. In this case, the encoder heads EH1 and EH2, the alignment microscopes GS1 and GS2, the focus measuring device AFM, and the foreign matter inspection device CD which are arranged around the mask M may have a mask whose diameter is small ( It is necessary to reposition around Ma) or adjust posture. By doing in this way, the position of the alignment mark on the mask Ma, the rotation angle of the mask Ma, etc. can be measured correctly.

In the example shown in FIG. 29, the alignment microscopes GS1 and GS2, the focus measuring apparatus AFM, and the foreign material inspection apparatus CD are arrange | positioned again around the mask Ma which diameter became small. In addition, the encoder heads EH1 and EH2 in this example are the positions of the viewing area IRa of the first projection optical system (odd number) and the viewing area IRb of the second projection optical system (even number), respectively, in the XZ plane. It is arranged in the vicinity of the position of). Therefore, after the mask replacement, the positions of the encoder heads EH1 and EH2 do not need to be greatly changed in the XZ plane.

However, by replacing with the mask Ma, the scale of the outer peripheral surface of the scale disk SD which the encoder heads EH1 and EH2 read, or the scale formed in the outer peripheral surface of the mask holding drum 21a with the mask Ma And the relative reading angles with the encoder heads EH1 and EH2 change. For this reason, the attitude | position is adjusted so that the encoder heads EH1 and EH2 may exactly face a scale surface. Specifically, as shown by arrows N1 and N2 shown in FIG. 29, each of the heads EH1 and EH2 is rotated (tilted) at the position along the diameter of the scale surface. By doing in this way, the information of the rotation angle of the mask Ma can be obtained with high precision.

When replacing with the mask Ma, the scale disk SD is simultaneously replaced with the mask Ma and the mask holding drum 21a, and the posture (tilt) of the encoder heads EH1 and EH2 is adjusted. You can also adjust the mounting position. The scale may be provided on the surface of the mask Ma or on the outer circumferential surface of the mask holding drum 21a. When replacing with the mask Ma, when the lattice pitch in the circumferential direction of the scale read out by the encoder heads EH1 and EH2 is different from the one before the exchange, the lower control device 16 performs the lattice pitch of the scale after the exchange. And the correspondence between the detected values of the encoder heads EH1 and EH2 are corrected. Specifically, the coefficient of conversion of the digital counter of the encoder system is corrected as a value of the rotation angle of the mask Ma after the replacement or the moving distance in the circumferential direction of the mask surface P1a. .

The focus measuring device AFM and the foreign material inspection device CD are shown in Fig. 29 as imaginary lines (imaginary lines), and the rotational center axis (the first axis (the first axis) of the mask M or the mask Ma). AX1) or just below in the Z-axis direction of the 1st axis | shaft AX1a, and arrange | positioned between illumination view IRa of a 1st projection optical system, and illumination view IRb of a 2nd projection optical system, and mask M ) Or the mask surface P1 or the mask surface P1a of the mask Ma may be detected from below. In this way, the change of the distance from the focus measuring apparatus AFM and the foreign material inspection apparatus CD to the surface of the mask M or the surface of the mask Ma before and after replacement of the mask Ma can be made small. . For this reason, it is possible to cope with the correction of the optical system or the processing software of the focus measuring device AFM and the foreign material inspection device CD. In this case, it is not necessary to change the mounting positions of the focus measuring device AFM and the foreign material inspection device CD.

By replacing with the mask Ma, the radius of curvature becomes small, so that the defocus in the exposure width (the scanning direction of the substrate P or the circumferential direction of the mask Ma) of the projection area PA becomes large. There is a possibility. In this case, adjustment of the exposure width (including the inclined portion), the illuminance of the illumination optical system IL, or the scanning speed (the rotational speed of the mask Ma and the transmission speed of the substrate P) is necessary. These are adjusted by adjusting the projection field stop 63 or the lower control device 16 adjusting the output of the light source of the light source device 13, the rotation of the mask holding drum 21a and the substrate supporting drum 25. I can adjust it. In this case, it is preferable to simultaneously change the exposure width, illuminance and scanning speed.

In addition, the magnification in the rotational direction of the mask Ma by the position of the projection area PA of the projection optical system PL, the relative positional relationship of the projection optical module PLM, and the circumferential length of the mask Ma are changed. It is necessary to adjust the back. For example, the lower control apparatus 16 controls the image shift optical member 65, magnification correction optical member 66, etc. which the projection optical module PLM of the projection optical system PL has, The magnification in the rotation direction of the projection area PA or the mask Ma of the projection optical system PL can be adjusted.

In step S103, adjustment of the position of the mask Ma in the Z-axis direction, adjustment of the optical component which illumination optical system IL has, adjustment of the optical component which projection optical system PL has, and encoder head EH1, EH2 The mechanical adjustment such as the adjustment is performed. Some of these can be adjusted automatically (or semi-automatically) by the lower control device 16, the adjustment drive mechanism, or the like, and some may be manually adjusted by the operator of the exposure apparatus U3d. In addition, in step S103, the lower control device 16 changes the control data (various parameters) and the like for controlling the exposure apparatus U3d based on the mask information after exposure or exposure information.

Although the exposure apparatus U3d was adjusted based on the after-exchange mask information acquired in step S102 in step S103, the shape, the dimension, the mounting position, etc. of the mask Ma measured by the measurement apparatus 18 shown in FIG. To the mask information after replacement, and the exposure apparatus U3d may be adjusted based on this. In this case, for example, the lower control device 16 performs various adjustments based on the mask Ma measured by the measuring device 18 after the lower control device 16 is replaced with the mask Ma. Moreover, about the parts which an operator should adjust and replace, the lower control apparatus 16 displays a part etc. which need adjustment, for example, on a monitor, and notifies an operator. By adjusting the exposure apparatus U3d based on the measured value of the mask Ma after the replacement, the mask information after the replacement that reflects changes in the environment, such as temperature or humidity, is obtained. The exposure apparatus U3d can be adjusted based on the state. In step S103, when the adjustment by replacing with the mask Ma ends, the process proceeds to step S104.

As mentioned above, when replacing with the mask of a different diameter, the characteristic of the related optical system, a mechanical system, and a detection system in an exposure apparatus may change. In this embodiment, the calibration apparatus as shown in FIG. 30 is provided so that the characteristic and performance as an exposure apparatus after mask replacement can be confirmed. 30 is a diagram of a calibration device. 31 is a diagram for explaining calibration. Although the exposure apparatus U3d is in the state suitable for the mask Ma after replacement in step S103, the state of the exposure apparatus U3d is more suitable for the mask Ma after replacement by performing calibration in step S104. Shall be. The calibration uses the calibration apparatus 110 shown in FIG. The lower control device 16 executes calibration in the present embodiment. The lower control device 16 includes, by the calibration device 110, a first mark ALMM serving as an adjustment mark provided on the surface of the mask Ma held by the mask holding drum 21a as shown in FIG. 31, The 2nd mark ALMR as a mark for adjustment provided in the surface of the board | substrate support drum 25 (the part which supports the board | substrate P of the board | substrate support drum 25) is detected. The lower control device 16 includes the illumination optical system IL, the projection optical system PL, and the mask Ma so that the relative position between the first mark ALMM and the second mark ALMR becomes a predetermined positional relationship. The rotation speed, the conveyance speed or magnification of the substrate P are adjusted. Therefore, although it is preferable to perform step S104 of calibration before winding the board | substrate P to the board | substrate support drum 25, the permeability of the board | substrate P is high and various patterns are not formed on the board | substrate P. As long as it is a state, you may perform a calibration, winding the board | substrate P on the board | substrate support drum 25. As shown in FIG.

As shown in FIG. 30, the calibration device 110 includes an imaging device (eg, CCD, CMOS) 111, a lens group 112, a prism mirror 113, and a beam splitter 114. do. The calibration device 110 is provided corresponding to each illumination optical system IL1 to IL6 in the case of a multi-lens system. When performing calibration, the lower control apparatus 16 uses the beam splitter 114 of the calibration apparatus 110 as the optical path of the illumination light beam EL1 between the illumination optical system IL and the polarization beam splitter PBS. Posted in When the calibration is not performed, the beam splitter 114 avoids the light path of the illumination light beam EL1.

Since the sensitivity of the imaging element 111 is sufficiently high, the power loss of light does not need to be considered. For this reason, the beam splitter 114 may be, for example, a half prism. In addition, the calibration device 110 can be miniaturized by allowing the beam splitter 114 to enter and exit the optical path of the illumination light beam EL1 between the illumination optical system IL and the polarization beam splitter PBS.

As shown in FIG. 30, of the surface in which the illumination light beam EL1 of the polarization beam splitter PBS which separates the light beam from the calibration light source 115 into illumination light beam EL1 and projection light beam EL2 is incident. There is also a method of making an incident from the opposite surface side. Furthermore, the calibration light source 115 (light emitting part) is arrange | positioned at the back surface side of the 2nd mark ALMR of the board | substrate support drum 25, and the calibration light beam is irradiated from the back surface side of the 2nd mark ALMR, The light transmitted through the second mark ALMR may be projected onto the mask surface P1a of the mask Ma after the replacement via the projection optical system PL and the polarization beam splitter PBS. In this case, the imaging element 111 of the calibration device 110 includes an image of the second mark ALMR of the substrate support drum 25 which is back projected onto the mask Ma after replacement and the mask Ma. The first mark ALMM on the image can be captured together.

The image of the first mark ALMM from the mask Ma is disposed by arranging the beam splitter 114 in the optical path of the illumination light beam EL1 between the illumination optical system IL and the polarization beam splitter PBS. And the image of the second mark ALMR from the substrate supporting drum 25 are guided to the prism mirror 113 of the calibration device 110 via the beam splitter 114. Light of each mark image reflected by the prism mirror 113 passes through the lens group 112, and the imaging time (sampling time) of one frame is very about 0.1 to 1 millisecond. It enters into the imaging element 111 which is short and has a high shutter speed. The lower control device 16 analyzes an image signal corresponding to the image of the first mark ALMM and the image of the second mark ALMR output from the imaging element 111, and the analysis result and the time of imaging. Based on the measured values of the respective encoder heads EH1, EH2, EN2, and EN3 (at the time of sampling), the relative positional relationship between the first mark ALMM and the second mark ALMR is obtained, and the relative positions of the two are determined. The illumination optical system IL, the projection optical system PL, the rotational speed of the mask Ma, the conveyance speed or the magnification of the substrate P are adjusted so as to be in the state of.

As shown in FIG. 31, the 1st mark ALMM has each illumination area | region IR (IR1-IR6) corresponding to each illumination optical system IL (IL1-IL6) between the center plane CL. It is arrange | positioned at the overlapping position (triangular part of both ends in the Y direction of each illumination area | region IR). The second mark ALMR is a position where each projection area PA (PA1 to PA6) corresponding to each projection optical system PL (PL1 to PL6) overlaps with the center plane CL interposed therebetween (each Triangular portions at both ends in the Y direction of the projection area PA). In calibration, the calibration device 110 provided for each projection optical module PLM is sequentially arranged with the first mark in the order of the first row (odd number) and the second row (even number) with the center plane CL interposed therebetween. The image of ALMM and the image of second mark ALMR are received.

As described above, when the adjustment (mainly mechanical adjustment) by replacing with the mask Ma is completed in step S103, the lower controller 16 conveys the mask Ma and the substrate P after the replacement. Exposure apparatus U3d is adjusted so that the position shift | offset with the board | substrate supporting drum 25 may be below an allowable range. Thus, the lower control apparatus 16 adjusts exposure apparatus U3d using at least the image of 1st mark ALMM and the image of 2nd mark ALMR. By doing in this way, the error which cannot be corrected by mechanical adjustment is further correct | amended based on the image of the actual mark acquired from the mask Ma after replacement | exchange and the board | substrate supporting drum 25. As shown in FIG. As a result, the exposure apparatus U3d can perform exposure using the mask Ma after replacement with appropriate and good accuracy.

In the above example, the exposure apparatus U3d is mechanically adjusted mainly after replacing the mask, but the adjustment after replacing the mask is not limited to this. For example, when the difference in the diameter of the cylindrical mask which can be attached to the exposure apparatus U3d is small, the effective diameter of the illumination optical system IL and the projection optical system PL is matched with the cylindrical mask with the smallest diameter among those cylindrical masks. And by determining the magnitude | size of polarizing beam splitter PBS, adjustment of angular characteristics, such as illumination light beam EL1, may be unnecessary. By doing in this way, the adjustment operation of exposure apparatus U3d can be simplified. In the present embodiment, the mask that can be used by the exposure apparatus U3d is classified into a plurality of groups for each diameter of the mask, when the diameter of the mask is changed within the group, and when the diameter of the mask is changed beyond the group. You may change the adjustment object, components, etc. of exposure apparatus U3d.

It is a side view which shows the example which rotatably supports a mask using an air bearing. 33 is a perspective view illustrating an example in which the mask is rotatably supported using an air bearing. The mask holding drum 21 holding the mask M may be rotatably supported at both ends by the air bearing 160. The air bearing 160 is made by arrange | positioning the some support unit 161 to the outer peripheral part of the mask holding drum 21 in ring shape. The air bearing 160 rotatably supports the mask holding drum 21 by blowing air (air) from the inner circumferential surface of each support unit 161 toward the outer circumferential surface of the mask holding drum 21. do. In this way, the air bearing 160 is a mask holding mechanism for rotatably attaching one of a plurality of masks M having different diameters, and rotating around a predetermined axis (first axis AX1). Function

In the above-described step S103, the support unit 161 is replaced with the air bearing 160 in accordance with the diameter of the replaced mask Ma. Moreover, before and after replacement, when the difference of the diameter (2xRm) of the mask M is small, you may adjust the position in the radial direction of each support unit 161, and correspond to the mask M after replacement. . Thus, when the exposure apparatus U3d supports the mask M rotatably through the air bearing 160, the air bearing 160 exposes the mask which differs in diameter so that replacement is possible. (U3d) Functions as a bearing device on the main body side.

<6th embodiment>

FIG. 34 is a diagram illustrating an entire configuration of an exposure apparatus according to a sixth embodiment. The exposure apparatus U3e is demonstrated using FIG. In order to avoid overlapping descriptions, only the parts different from the above embodiments will be described, and the same components as the embodiments will be described with the same reference numerals as the embodiments. In addition, each structure of the exposure apparatus U3d of 5th Embodiment is applicable to this embodiment.

Although the exposure apparatus U3 of embodiment was a structure using the reflection type mask in which the light which reflected the mask became a projection light beam, the exposure apparatus U3e of this embodiment is a transmission type in which the light which transmitted the mask becomes a projection light beam. It is a structure using a mask (transmissive cylindrical mask). In the exposure apparatus U3e, the mask holding mechanism 11e includes a mask holding drum 21e for holding the mask MA, a guide roller 93 for supporting the mask holding drum 21e, and a mask holding drum ( The drive roller 94 which drives 21e) and the drive part 96 are provided. Although not shown, the exposure apparatus U3e is equipped with the exchange mechanism 150 for replacing mask MA as shown in FIG.

The mask holding mechanism 11e rotatably mounts one of the plurality of masks MA having different diameters, and rotates around a predetermined axis (first axis AX1). The exposure apparatus U3e is attached to the mask holding mechanism 11e which rotatably mounts one of the several mask MA from which diameter differs, and rotates around the 1st axis | shaft AX1 as a predetermined axis | shaft. According to the diameter of the mask MA used, it has the adjustment part which adjusts the distance of at least 1st axis | shaft AX1 and a board | substrate support mechanism. This adjustment part sets the space | interval of the outer peripheral surface of the mask MA attached to the mask holding mechanism 11e, and the board | substrate P supported by the board | substrate support mechanism within a predetermined permissible range.

The mask holding drum 21e is a cylindrical shape having a constant thickness, made of, for example, glass or quartz, and its outer peripheral surface (cylindrical surface) forms the mask surface of the mask MA. In other words, in the present embodiment, the illumination region on the mask MA is curved in a cylindrical shape having a constant radius of curvature Rm from the center line. The part which overlaps with the pattern of the mask MA from the radial direction of the mask holding drum 21e among the mask holding drum 21e, for example, the center part other than the both ends in the Y-axis direction of the mask holding drum 21e. Silver has transparency to the illumination light flux. On the mask surface, an illumination region on the mask MA is disposed.

The mask MA is, for example, a transmissive planar shape in which a pattern is formed by a light shielding layer such as chromium on one surface of a very thin glass plate (for example, 100 μm to 500 μm in thickness) having a good flatness. It is created as a sheet mask, which is bent along the outer circumferential surface of the mask holding drum 21e and used in a state of being wound (pasted) on this outer circumferential surface. The mask MA has a pattern non-formation region in which a pattern is not formed, and is attached to the mask holding drum 21e in the pattern non-formation region. The mask MA can be removed with respect to the mask holding drum 21e. The mask MA, like the mask M of the embodiment, is wound on the mask holding drum 21e made of the transparent cylindrical base material, instead of being wound directly on the outer circumferential surface of the mask holding drum 21e made of the transparent cylindrical base material. The mask pattern by the light shielding layer may be drawn and integrated. Also in this case, the mask holding drum 21e functions as a support member of the mask.

The guide roller 93 and the drive roller 94 extend in the Y-axis direction parallel to the central axis of the mask holding drum 21e. The guide roller 93 and the drive roller 94 are rotatably provided around the axis line parallel to the rotation center axis of the mask MA and the mask holding drum 21e. The outer diameters of the end portions in the axial direction of the guide rollers 93 and the driving rollers 94 are larger than those of the other portions, respectively, and the ends are circumscribed to the mask holding drum 21e. In this way, the guide roller 93 and the drive roller 94 are provided so as not to contact the mask MA held by the mask holding drum 21e. The drive roller 94 is connected with the drive part 96. The drive roller 94 rotates the mask holding drum 21e about the rotation center axis by transmitting the torque supplied from the drive part 96 to the mask holding drum 21e.

Although the mask holding mechanism 11e is equipped with one guide roller 93, the number is not limited, Two or more may be sufficient as it. Similarly, although the mask holding mechanism 11e is equipped with one drive roller 94, the number is not limited, Two or more may be sufficient as it. At least one of the guide roller 93 and the drive roller 94 may be disposed inside the mask holding drum 21e and may be inscribed with the mask holding drum 21e. Moreover, the part (both ends of the Y-axis direction) which do not overlap with the pattern of the mask MA from the radial direction of the mask holding drum 21e among the mask holding drum 21e may have light transmissivity with respect to an illumination light flux. It does not have to be light transmissive. In addition, one or both of the guide roller 93 and the driving roller 94 may have a truncated cone shape, for example, and its central axis (rotational axis) may be non-parallel to the central axis.

The exposure apparatus U3e has a field of view (illumination region) IRa of the first projection optical system and a field of view of the second projection optical system shown in FIG. 25 at the position between the guide roller 93 and the drive roller 94. It is preferable to arrange the illumination region IRb, respectively. In this way, even if the diameter of the mask MA changes, the position in the Z-axis direction of each of the viewing areas IRa and IRb can be kept constant. As a result, when replacing with the mask MA of a different diameter, adjustment of the position in the Z-axis direction of each of the viewing area | regions IRa and IRb becomes easy.

The illuminating device 13e of this embodiment is equipped with the light source (not shown) and illumination optical system (lighting system) ILe. The illumination optical system ILe is provided with the some (for example 6) illumination optical systems ILe1-ILe6 lined up in the Y-axis direction corresponding to each of the some projection optical systems PL1-PL6. As a light source, various light sources can be used similarly to the light source device 13 of embodiment. The illumination light emitted from the light source is uniform in illuminance distribution, and is divided into a plurality of illumination optical systems ILe1 to ILe6 via, for example, light guide members such as optical fibers.

Each of the plurality of illumination optical systems ILe1 to ILe6 includes a plurality of optical members such as a lens. Each of the plurality of illumination optical systems ILe1 to ILe6 includes, for example, an integrator optical system, a rod lens, a fly's eye lens, and the like, and illuminates the illumination area of the mask MA by an illumination beam having a uniform illuminance distribution. In this embodiment, the some illumination optical system ILe1-ILe6 is arrange | positioned inside the mask holding drum 21e. Each of the plurality of illumination optical systems ILe1 to ILe6 passes through the mask holding drum 21e from the inside of the mask holding drum 21e and is illuminated on the mask MA held on the outer circumferential surface of the mask holding drum 21e. Illuminate the area.

The illumination device 13e guides the light emitted from the light source by the illumination optical systems ILe1 to ILe6, and irradiates the mask MA from the inside of the mask holding drum 21e with the guided illumination light flux. The illuminating device 13e illuminates a part (lighting area) of the mask MA held by the mask holding drum 21e with uniform brightness by the illumination light flux. Moreover, the light source may be arrange | positioned inside the mask holding drum 21e, and may be arrange | positioned outside the mask holding drum 21e. In addition, the light source may be a device (external device) separate from the exposure apparatus U3e.

Illumination optical systems ILe1-ILe6 irradiate the illumination light beam extended in the slit-shaped direction in the direction of the 1st axis | shaft AX1 as a predetermined axis from the inside of the mask MA toward the outer peripheral surface. Moreover, exposure apparatus U3e has the adjustment part which adjusts the width | variety with respect to the rotation direction of the mask MA of illumination light beam according to the diameter of the mask MA to be attached.

The substrate support mechanism 12e of the exposure apparatus U3e has the substrate stage 102 holding the planar substrate P and the X stage in the plane perpendicular to the center plane CL. Therefore, a scanning device (not shown) for scanning movement is provided. Since the surface of the board | substrate P on the support surface P2 side shown in FIG. 34 is a plane substantially parallel to XY surface, it is reflected from the mask MA, passes through the projection optical system PL, and projects it on the board | substrate P The chief ray of the projection light beam used becomes perpendicular to the XY plane. In the calibration of step S104 described above, the second mark ALMR shown in FIG. 31 is provided on the surface of the support surface P2 of the substrate stage 102.

The exposure apparatus U3e uses a transmissive mask as the mask MA, but in this case as well as the exposure apparatus U3, the exposure apparatus U3e can be replaced with a mask MA having a different diameter. And when replacing with the mask MA of a different diameter, the exposure apparatus U3e adjusts at least one of illumination optical systems ILe1-ILe6 and projection optical systems PL1-PL6 at least similarly to exposure apparatus U3. After that, the relative positional relationship between the mask MA after the replacement and the substrate stage 102 for transporting the substrate P is adjusted (set) so as to be within a predetermined allowable range. By doing in this way, the error which could not be corrected by mechanical adjustment is corrected further precisely based on the actual mark image acquired from the mask MA and the board | substrate stage 102, etc. As a result, the exposure apparatus U3e is maintained at an appropriate and good precision, and it becomes possible to perform exposure by the mask after replacement.

In addition, you may apply to the exposure apparatus U3 the board | substrate support mechanism 12e which the exposure apparatus U3e of this embodiment has instead of the board | substrate support mechanism 12 which the exposure apparatus U3 of embodiment has. Moreover, the board | substrate supporting drum 25 is rotatably supported by the exposure apparatus U3 of embodiment using the guide roller 93 and the drive roller 94, and also the guide roller 93 and the drive roller 94 are shown. ), The field of view area (lighting area) IRa of the first projection optical system and the field of view area (lighting area) IRb of the second projection optical system, respectively, shown in FIG. 25 may be disposed. By doing in this way, when replacing with the mask MA of a different diameter, adjustment of the position in the Z-axis direction of each of the viewing area IRa and IRb becomes easy.

<Seventh embodiment>

35 is a diagram illustrating an overall configuration of an exposure apparatus according to a seventh embodiment. 35, the exposure apparatus U3f will be described. In order to avoid overlapping descriptions, only the parts different from the above embodiments will be described, and the same components as the embodiments will be described with the same reference numerals as the embodiments. In addition, each structure of the exposure apparatus U3d of 6th Embodiment and the exposure apparatus U3e of 6th Embodiment is applicable to this embodiment.

Exposure apparatus U3f is a substrate processing apparatus which performs what is called proximity exposure to the board | substrate P. FIG. Exposure apparatus U3f sets the clearance gap (proxy gap) between mask MA and the board | substrate support drum 25f about several micrometers-about several tens of micrometers, and illumination optical system ILc directly connects to board | substrate P. FIG. Illumination light beam EL is irradiated and non-contact exposure is performed. The mask MA is provided on the surface of the mask holding drum 21f. The exposure apparatus U3f of this embodiment has the structure using the transmissive mask in which the light which permeate | transmitted the mask MA turns into projection light beam EL. In the exposure apparatus U3f, the mask holding drum 21f is a cylindrical shape having a constant thickness, made of, for example, glass or quartz, and its outer peripheral surface (cylindrical surface) forms the mask surface of the mask MA. do. Although not shown, the exposure apparatus U3f is equipped with the exchange mechanism 150 for replacing the mask MA as shown in FIG.

In the present embodiment, the substrate supporting drum 25f is rotated by the torque supplied from the second drive unit 26f including an actuator such as an electric motor. For example, the pair of drive rollers MGG and MGG driven by the magnetic gear drive the mask holding drum 21f so as to be opposite to the rotational direction of the second drive part 26f. The 2nd drive part 26f rotates the board | substrate support drum 25f, and also rotates the drive rollers MGG and MGG and the mask holding drum 21f, and the mask holding drum 21f and the board | substrate supporting drum 25f. Move synchronously. Since the board | substrate P is a part wound around the board | substrate support drum 25f via a pair of air turn bar (ATB1f, ATB2f) and a pair of guide rollers 27f, 28f, the board | substrate support drum When 25f rotates, the board | substrate P is conveyed in synchronism with 21 f of mask holding drums. In this manner, the pair of drive rollers MGG and MGG replace one of the plurality of masks having different diameters so as to be interchangeable, and retain the mask to rotate around the predetermined axis (first axis AX1). Function as a mechanism

The illumination optical system ILc is located at the position where the outer peripheral surface of the mask MA and the substrate P supported by the substrate supporting drum 25f are closest at the position with the pair of driving rollers MGG and MGG. The illumination light flux extending in the slit shape in the Y direction is projected from the inside of the mask MA toward the substrate P. In such a proximity exposure method, since the exposure position (corresponding to the projection area PA) of the mask pattern on the substrate P becomes one in the circumferential direction of the mask MA, it is replaced with a cylindrical mask having a different diameter. In this case, the position in the Z-axis direction of the cylindrical mask or the position in the Z-axis direction of the substrate supporting drum 25f supporting the substrate P may be adjusted so as to maintain the proximity gap at a predetermined value.

In this manner, the exposure apparatus U3f uses a transmissive mask as the mask MA and performs proximity exposure to the substrate P. In this case, like the exposure apparatus U3, a mask having a different diameter is used. Can be exchanged with (MA). And when replacing with the mask MA of a different diameter, the exposure apparatus U3f performs the same calibration as the exposure apparatus U3, and supports the board | substrate which conveys the mask MA and the board | substrate P after replacement | exchange. The relative positional shift between the drum 25f (including the proxy gap) can be adjusted to be within the allowable range. By doing in this way, the error which could not be corrected by mechanical adjustment is corrected more accurately based on the actual mark image acquired from the mask MA and the board | substrate support drum 25f, As a result, the exposure apparatus U3f is It becomes possible to perform exposure by maintaining appropriate and favorable precision.

In addition, the illumination optical system ILc of the exposure apparatus U3f as shown in FIG. 35 has a narrow illumination light flux in the X direction (the rotational direction of the mask MA) that is long and thin in the Y direction, and has a predetermined numerical aperture NA. Since only the mask surface of the raw mask MA is irradiated, even if the diameter of the cylindrical mask to be mounted is different, it is not necessary to substantially adjust the orientation characteristic (inclination of the chief ray, etc.) of the illumination light beam from the illumination optical system ILc. However, illumination having a variable width in the illumination optical system ILc so as to change the width of the X direction (rotational direction of the mask MA) of the illumination light beam irradiated onto the mask surface in accordance with the diameter (radius) of the mask MA. A field stop (variable blind) may be provided, or a refractive optical system (for example, a cylindrical zoom lens or the like) that reduces or enlarges only the width of the X-direction (the rotational direction of the mask MA) of the illumination light beam may be provided.

In addition, in the exposure apparatus U3f of FIG. 35, although the board | substrate P was supported by the board | substrate supporting drum 25f in the cylindrical form, you may support in planar shape like the exposure apparatus U3e of FIG. When the substrate P is supported in a planar shape, the width in the X direction (rotational direction of the mask MA) of the illumination light beam corresponding to the difference in the diameter of the mask MA as compared with the case where the substrate P is supported in the cylindrical shape. You can widen the range of adjustment. By doing in this way, within the permissible range of the proximity gap according to the diameter of the mask MA, the width | variety of the X direction (rotational direction of mask MA) of an illumination light beam can be adjusted optimally, and is on the board | substrate P. It is possible to optimize the maintenance and the productivity of the pattern quality (fidelity, etc.) transferred to. In that case, a variable blind, a cylindrical zoom lens, etc. are contained in the adjustment part which adjusts the width of an illumination light beam according to the diameter of the transmissive mask MA.

In each of the above embodiments, there is a certain range in the diameter of the cylindrical mask that can be attached to the exposure apparatus. For example, in an exposure apparatus provided with a projection optical system for projecting a fine pattern having a line width of about 2 μm to 3 μm, the depth of focus (DOF) of the projection optical system is narrow at about several tens of micrometers in width, and within the projection optical system. The range of focus adjustment is also narrow. In such an exposure apparatus, the cylindrical mask of the diameter changed in millimeters from the diameter determined as a standard becomes difficult to attach. However, on the exposure apparatus side, when each part and each mechanism have a large adjustment range so as to correspond to the diameter change of the cylindrical mask from the beginning, the diameter range of the cylindrical mask which can be attached is based on the adjustment range. It is decided. In addition, in the exposure apparatus of the proximity type like FIG. 35, the gap between a part of the outer peripheral surface of the mask MA and the substrate P may be in a predetermined range, and as long as the support mechanism of the cylindrical mask is compatible, 0.5 times, 1.5 times, 2 times diameter. Therefore, it is possible to attach even a large cylindrical mask.

36 is a perspective view showing a partial structural example of a support mechanism in the exposure apparatus of the reflective cylindrical mask M. FIG. In FIG. 36, although only the mechanism which supports the shaft 21S which protruded to one side of the direction (Y direction) which the rotation axis AX1 of the cylindrical mask M (mask holding drum 21) extends, the same is also the other side. A mechanism is provided. In the case of FIG. 36, although the scale disk SD is provided integrally with the cylindrical mask M, the encoder head is formed on both ends of the outer circumferential surface of the cylindrical mask M in the Y direction simultaneously with the formation of the device mask pattern. May be provided by engraving a scale (lattice) that can be read.

In the front end of the shaft 21S, a cylindrical body 21K which is always precisely processed to a constant diameter is formed even in the mask M (mask holding drum 21) having a different diameter. The cylindrical body 21K is formed on the Z movable member 204 which is movable in the vertical direction (Z direction) at a portion where a part of the frame (body) 200 of the exposure apparatus main body is notched in a U shape. Supported by. Guide rail portions 201A and 201B extending linearly in the Z direction are formed at the end portions extending in the Z direction of the U-shaped notch portion of the frame 200 so as to face each other at predetermined intervals in the X direction.

The Z movable member 204 includes a pad portion 204P recessed in a semicircular shape for supporting the lower half of the cylindrical body 21K by an air bearing, and the guide rail portions 201A and 201B of the frame 200. Slider portions 204A and 204B are formed. The slider portions 204A and 204B are supported to move smoothly in the Z direction by bearings or air bearings that mechanically contact the guide rail portions 201A and 201B.

The frame 200 is provided with a ball screw 203 axially rotatably supported around an axis parallel to the Z axis, and a drive source (motor, reduction gear, etc.) 202 for rotating the ball screw 203. do. The nut part screwed with the ball screw 203 is provided in the cam member 206 provided below the Z movable body 204. Accordingly, the cam member 206 linearly moves in the Z direction by the rotation of the ball screw 203, and thus the Z movable member 204 also linearly moves in the Z direction. Although not shown in FIG. 36, a guide member for guiding the cam member 206 to move in the Z direction without displacing the X or Y direction may be provided in the member supporting the tip of the ball screw 203. .

The cam member 206 and the Z movable member 204 may be fixed integrally, or may be connected by a leaf spring, a flexure, or the like, which is high rigidity in the Z direction and low rigidity in the X direction or the Y direction. . Alternatively, a spherical sheet may be formed on each of the upper surface of the cam member 206 and the lower surface of the Z movable body 204, and a steel ball may be provided between the spherical sheets. In this way, while supporting the cam member 206 and the Z movable body 204 with high rigidity in the Z direction, relatively small inclination between the cam member 206 and the Z movable body 204 centered on the steel ball is achieved. Allowed. In addition, in the support mechanism of FIG. 36, an elastic support member (for supporting most of the self-weight of the cylindrical mask M (mask holding drum 21)) between the Z movable member 204 and the frame 200 ( 208A, 208B are provided.

The elastic support members 208A and 208B are composed of an air piston whose length is changed by supplying a compressed gas therein, and is a cylindrical mask M (mask holding drum 21) supported by the Z movable member 204. Support the load by pneumatically. When the cylindrical body 21K serving as the rotation axis of the cylindrical mask M (mask holding drum 21) is supported by the pad portion 204P of the Z movable body 204, the cylindrical mask M having a different diameter (mask) In the holding drum 21, the self weight is naturally different. For this reason, the pressure of the compressed gas supplied into the air piston as the elastic support members 208A and 208B is adjusted in accordance with its own weight. In this way, the load in the Z direction acting between the ball screw 203 and the nut part in the cam member 206 is greatly reduced, and the ball screw 203 can also be rotated with a very small torque, Therefore, the drive source 202 can also be made compact, and deformation of the frame 200 due to heat generation or the like can be suppressed.

In addition, although not shown in FIG. 36, the position of the Z movable body 204 in the Z direction is precisely measured with sub-micron measurement resolution by a measuring instrument such as a linear encoder, and the measured value. The drive source 202 is servo controlled based on this. In addition, a load sensor for measuring the change in the load acting between the Z movable member 204 and the cam member 206 or a torsion sensor for measuring the deformation caused by the Z direction stress of the cam member 206 is provided. According to the measured value from each sensor, you may servo-control the pressure (gas supply and exhaust) of the compressed gas supplied to the air piston as the elastic support members 208A and 208B.

In addition, after the cylindrical mask M (mask holding drum 21) is attached to the pad portion 204P of the Z movable body 204, and the height in the Z direction by the drive source 202 is set at a predetermined position, Z direction of the cylindrical mask M (mask holding drum 21) again in the middle of carrying out various adjustments and calibrations of the illumination optical system IL and the projection optical system PL, or based on the result of the calibration. There is also a movement of the position. The support mechanism including the Z movable body 204 of FIG. 36 is also provided in the shaft on the opposite side to the cylindrical mask M (mask holding drum 21), and each Z movable body 204 of the support mechanism provided in both sides is provided. By adjusting the position in the Z direction separately, the minute inclination with respect to the XY plane of the rotation center axis AX1 can be adjusted. By the above, when the position adjustment or inclination adjustment of the mounted cylindrical mask M (mask holding drum 21) of the Z direction is completed, the Z movable body 204 will be guide rail part 201A, 201B (namely, The frame 200 may be mechanically clamped.

When the maximum diameter of the cylindrical mask M (mask holding drum 21) which can be attached to the projection exposure apparatus is DSa and the minimum diameter is DSb, the movement stroke in the Z direction of the Z movable body 204 is (DSa-DSb). ) / 2 may be sufficient. As an example, when the maximum diameter of the mountable cylindrical mask M (mask holding drum 21) is 300 mm and the minimum diameter is 240 mm, the movement stroke of the Z movable body 204 will be 30 mm.

The cylindrical mask M having a diameter of 300 mm widens the pattern forming region as the mask M by 60 mm x π188 mm in the circumferential direction (scanning exposure direction) of the cylindrical mask with respect to the cylindrical mask M having a diameter of 240 mm. It means you can. As in the conventional scanning exposure apparatus, when scanning a planar mask in one dimension, widening the pattern formation region in the scanning direction is intended to increase the size of the mask stage corresponding to the enlargement of the dimension of the planar mask of 180 mm or more and to move the stroke of the mask stage by 180 mm. It causes the enlargement of the body structure for abnormally expanding. On the other hand, as shown in FIG. 36, the Z movable body 204 which supports the rotating shaft AX1 (shaft 21S) of the cylindrical mask M (mask holding drum 21) can be precisely moved to Z direction. It is possible to easily cope with the enlargement of the pattern formation region of the mask without increasing the size of the other part of the apparatus only by making the configuration.

<Device manufacturing method>

Next, with reference to FIG. 37, the device manufacturing method is demonstrated. 37 is a flowchart showing a device manufacturing method by the device manufacturing system. This device manufacturing method can be implemented by any of the first to seventh embodiments.

In the device manufacturing method shown in FIG. 37, the function and performance design of the display panel by self-luminescent elements, such as organic electroluminescent element, are first performed, for example, and a necessary circuit pattern and wiring pattern are designed by CAD etc. (step S201). Next, based on the pattern for every layer designed by CAD etc., the mask M of the required layer is produced (step S202). Moreover, the supply roll FR1 by which the flexible board | substrate P (resin film, metal thin film, plastics, etc.) which become a base material of a display panel were wound up is prepared (step S203). Moreover, the roll-shaped board | substrate P prepared in this step S203 has modified the surface as needed, the base layer (for example, micro unevenness | corrugation by the imprint system) was preformed, and the photosensitive function A film or transparent film (insulating material) may be laminated in advance.

Next, on the substrate P, a back plane layer composed of an electrode, a wiring, an insulating film, a TFT (thin film semiconductor), or the like constituting the display panel device is formed and stacked on the back plane layer. The light emitting layer (display pixel part) by self-light emitting elements, such as organic electroluminescent element, is formed (step S204). This step S204 also includes a conventional photolithography step of exposing the photoresist layer using the exposure apparatus U3 described in the above embodiments, but the substrate P coated with the photosensitive silane coupling material instead of the photoresist (P) ) And a wet process of forming a pattern (wiring, electrode, etc.) of a metal film by electroless plating by pattern exposing the photosensitive catalyst layer by pattern exposure of the surface by forming a pattern by hydrophilicity on the surface. Alternatively, a treatment by a printing step or the like that draws a pattern by a conductive ink or the like containing silver nanoparticles is also included.

Next, for every display panel device continuously manufactured on the elongate board | substrate P by a roll system, the board | substrate P is diced, or the protective film (large environment barrier layer) on the surface of each display panel device. ), A color filter sheet, or the like are bonded to each other to assemble the device (step S205). Next, an inspection process is performed as to whether the display panel device functions normally or satisfies the desired performance and characteristics (step S206). As described above, a display panel (flexible display) can be manufactured.

The exposure apparatus which concerns on embodiment mentioned above and its modification is manufactured by assembling the various subsystem containing each component enumerated by this claim so as to maintain predetermined mechanical precision, electrical precision, and optical precision. In order to secure these various accuracy, before and after assembly of the exposure apparatus, adjustment for achieving optical precision for various optical systems, adjustment for achieving mechanical precision for various mechanical systems, and electrical precision for various electric systems are achieved. Adjustment is made. The assembling process from various sub-systems to the exposure apparatus includes mechanical connection of various sub-systems, wiring connection of electric circuits, piping connection of air pressure circuits, and the like. It goes without saying that there is an assembling step for each subsystem before the assembling step from these various subsystems to the exposure apparatus. When the assembly process to the exposure apparatus of various subsystems is complete | finished, total adjustment is performed and the various precision as the whole exposure apparatus is ensured. Moreover, it is preferable to manufacture an exposure apparatus in the clean room in which temperature, a clean degree, etc. were managed.

In addition, the component of the said embodiment and its modification can be combined suitably. In addition, some components may not be used. In addition, the components may be substituted or changed without departing from the scope of the present invention. In addition, as long as permitted by law, all the publications concerning the exposure apparatus etc. which were quoted by the above-mentioned embodiment, and description of US patent are used as a part of description of this specification. As described above, other embodiments, operational techniques, and the like made by those skilled in the art based on the above embodiments are all included in the scope of the present invention.

1 device manufacturing system 2 substrate supply apparatus
4 substrate recovery device 5 upper controller
U3: exposure apparatus (substrate processing apparatus) M: mask
IR1 to IR6: Illumination Area IL1 to IL6: Illumination Optical System
ILM: illumination optical module PA1 to PA6: projection area
PLM: Projection Optical Module

Claims (11)

On the cylindrical outer circumferential surface of the substrate supporting drum rotating around the axis, the flexible long sheet substrate is supported and moved to the peripheral velocity Vp with the long direction as the scanning direction, In the projection area set on the surface of the sheet substrate supported by the outer circumferential surface, a projection image having a planar shape corresponding to the pattern of the electronic device formed by the projection optical system is projected while moving in the scanning direction at a speed Vm. By the pattern exposure method which scan-exposes the said pattern on the said sheet substrate by
The amount of projection error with respect to the scanning direction caused by the surface of the sheet substrate curved in the scanning direction in the projection area and the projection image surface projected in the planar projection image projected in the projection area is And the main speed Vp and the speed Vm in a relationship of Vp &gt; Vm so as to be zero at each of two places in the scanning direction with the center position of the scanning direction in the projection area interposed therebetween. The method according to claim 1,
The relative difference between the main speed Vp and the speed Vm,
The pattern exposure method set so that the average value of the absolute value of the quantity of the said projection error may become smaller than the minimum dimension of the image of the pattern formed in the said projection image surface. The method according to claim 1,
The relative difference between the main speed Vp and the speed Vm,
The pattern exposure method in which the average value of the positive absolute values of the projection error is set to be smaller than the resolution defined by the numerical aperture of the projection optical system, the wavelength of exposure light, and the process constant. The method according to claim 1,
The relative difference between the main speed Vp and the speed Vm,
The pattern exposure method in which the average value of the squares of the amounts of the projection errors is smaller than the resolution defined by the numerical aperture of the projection optical system, the wavelength of exposure light, and the process constant. The method according to claim 1,
The width of the scanning direction of the projection area is ± A, the radius of curvature of the scanning direction of the surface of the sheet substrate is Rp, the angular velocity of the surface of the sheet substrate at the time of the scanning exposure is ωp, and the numerical aperture of the projection optical system is NA, the wavelength of the exposure light is λ, the process constant is k,
When the velocity at the same time as the main velocity Vp and the velocity Vm is equal to V and the movement position within the width ± A of the projection region as x, the width ± A of the projection region is set to satisfy the following expression. The pattern exposure method which becomes.
[Equation 1]

[Equation 2]

The method according to any one of claims 1 to 5,
When the relative difference between the main speed Vp and the speed Vm is the change rate α (%) expressed in (Vm-Vp) / Vp, the absolute value of the change rate α is set between 0 <α <0.04%, Pattern exposure method. The method according to any one of claims 1 to 5,
The pattern exposure method of which the said pattern formed as the said projection image on the surface of the said sheet | seat board | substrate is formed in the flat reflective mask arrange | positioned at the water surface of the said projection optical system. The method according to any one of claims 1 to 5,
The light distribution corresponding to the pattern formed as the projection image on the surface of the sheet substrate is formed by a DMD (digital mirror device) or SLM (spatial light modulator) controlled based on data. . The method according to any one of claims 1 to 5,
The projection optical system includes a plurality of projection optical modules configured in the same way,
Each of the projection optical modules is arranged in a column shape along the direction of the axis line of the substrate supporting drum, and projects the image of the pattern onto the projection area set on each of the surface of the sheet substrate. . The method according to claim 9,
Each of the plurality of projection optical modules is arranged in at least two rows in the scanning direction. As a device manufacturing method for forming an electronic device on the surface of a flexible long sheet substrate,
Forming a photosensitive functional layer on a surface of the sheet substrate;
The process of exposing the light distribution corresponding to the pattern for the said electronic device to the said photosensitive functional layer of the said sheet | seat board | substrate by the pattern exposure method of any one of Claims 1-5,
And performing a wet process or a print process on the sheet substrate after the exposure to form a film according to the pattern exposed on the photosensitive functional layer.

Images