JPWO2014171270A1 - Substrate processing apparatus, device manufacturing method, scanning exposure method, exposure apparatus, device manufacturing system, and device manufacturing method - Google Patents

Abstract

A first support member that supports one of the mask and the substrate so as to be along a first surface curved in a cylindrical surface shape with a predetermined curvature, and a mask and a substrate that are along a predetermined second surface A projection optical system comprising: a second support member that supports the other; a moving mechanism that rotates the first support member and moves the second support member to move the mask and the substrate in the scanning exposure direction. A pattern image is formed on a predetermined projection image plane by a projection light beam including a principal ray substantially parallel to a line perpendicular to the center of the projection exposure area in the scanning exposure direction. (2) The moving speed of the support member is set, and the moving speed on the side having a larger curvature or plane between the projected image plane of the pattern and the exposure surface of the substrate is made relatively smaller than the other moving speed.

Description

  The present invention relates to a substrate processing apparatus, a device manufacturing method, a scanning exposure method, an exposure apparatus, a device manufacturing system, and a device manufacturing method that project a mask pattern onto a substrate and expose the pattern onto the substrate.

  There are device manufacturing systems for manufacturing various devices such as display devices such as liquid crystal displays and semiconductors. The device manufacturing system includes a substrate processing apparatus such as an exposure apparatus. The substrate processing apparatus described in Patent Document 1 projects an image of a pattern formed on a mask arranged in an illumination area onto a substrate or the like arranged in a projection area, and exposes the pattern on the substrate. Masks used in the substrate processing apparatus include planar ones and cylindrical ones.

  In an exposure apparatus used in a photolithography process, an exposure apparatus that exposes a substrate using a cylindrical or columnar mask (hereinafter also collectively referred to as a cylindrical mask) as disclosed in the following patent document is known. (For example, Patent Document 2). An exposure apparatus that continuously exposes a device pattern for a display panel on a long sheet substrate having flexibility (flexible) using a cylindrical mask is also known (for example, Patent Document 3).

JP 2007-299918 A International Publication No. WO2008 / 029917 JP 2011-221538 A

  Here, the substrate processing apparatus can shorten the scanning exposure time for one shot area or device area on the substrate by increasing the exposure area (slit-like projection area) in the scanning exposure direction. Productivity such as the number of substrates processed per hour can be improved. However, as described in Patent Document 1, when a rotatable cylindrical mask is used in order to improve productivity, the mask pattern is curved in a cylindrical shape. If the direction is the direction of scanning exposure and the dimension of the slit-shaped projection region in the scanning exposure direction is increased, the quality (image quality) of the pattern projected and exposed on the substrate may be lowered.

  As shown in Patent Document 2 described above, a cylindrical or columnar mask has an outer peripheral surface (cylindrical surface) having a constant radius from a predetermined rotation center axis (center line), and an electronic device ( For example, a mask pattern of a semiconductor IC chip or the like is formed. When the mask pattern is transferred onto the photosensitive substrate (wafer), the cylindrical mask is synchronously rotated around the rotation center axis while moving the substrate in one direction at a predetermined speed. In this case, if the diameter of the cylindrical mask is set so that the entire peripheral length of the outer peripheral surface of the cylindrical mask corresponds to the length of the substrate, the mask pattern can be scanned and exposed continuously over the length of the substrate. Further, as in Patent Document 3, when such a cylindrical mask is used, a long flexible sheet substrate (with a photosensitive layer) is fed at a predetermined speed in the longitudinal direction, and the cylindrical mask is synchronized with the speed. By simply rotating, a pattern for a display panel can be repeatedly and continuously exposed on a sheet substrate. Thus, when a cylindrical mask is used, it is expected that the efficiency and tact of the exposure processing of the substrate will be improved, and the productivity of electronic devices, display panels, etc. will be increased.

  However, particularly when a mask pattern for a display panel is exposed, the screen size of the display panel is various from several inches to several tens of inches, and the dimensions and aspect ratios of the mask pattern area for that purpose are also various. In that case, if the diameter of the cylindrical mask that can be mounted on the exposure apparatus and the dimensions in the direction of the rotation center axis are uniquely determined, it can be efficiently applied to the outer peripheral surface of the cylindrical mask corresponding to various sizes of display panels. It becomes difficult to arrange the mask pattern region. For example, in the case of a display panel having a large screen size, even if the mask pattern area for one surface of the display panel can be formed on almost the entire outer periphery of the cylindrical mask, the display panel is slightly smaller than that size. The mask pattern area for two surfaces cannot be formed, and the margin in the circumferential direction (or the rotation central axis direction) increases.

  An object of an aspect of the present invention is to provide a substrate processing apparatus, a device manufacturing method, and a scanning exposure method capable of producing a high-quality substrate with high productivity.

  Another object of the present invention is to provide an exposure apparatus capable of mounting cylindrical masks having different diameters, a device manufacturing system, and a device manufacturing method using such an exposure apparatus.

  According to a first aspect of the present invention, there is provided a substrate processing apparatus including a projection optical system that projects a light beam from a mask pattern arranged in an illumination area of illumination light onto a projection area where a substrate is arranged. A first support member that supports one of the mask and the substrate so as to be along a first surface curved in a cylindrical surface shape with a predetermined curvature in one of the illumination region and the projection region. A second support member that supports the other of the mask and the substrate so as to be along a predetermined second surface in the other region of the illumination region and the projection region, and the first support The mask is supported by the second support member by rotating a member, moving one of the mask and the substrate supported by the first support member in the scanning exposure direction, and moving the second support member. And the other of the substrate and the scanning exposure A moving mechanism that moves the image in a direction, the projection optical system forms an image of the pattern on a predetermined projection image plane, and the moving mechanism moves the moving speed of the first support member and the second support member. The substrate processing apparatus in which the moving speed on the side of the projection image plane of the pattern and the exposure surface of the substrate that has a larger curvature or plane is relatively smaller than the other moving speed. A substrate processing apparatus is provided.

  According to a second aspect of the present invention, forming the pattern of the mask on the substrate using the substrate processing apparatus according to the first aspect, supplying the substrate to the substrate processing apparatus, A device manufacturing method is provided.

  According to the third aspect of the present invention, a pattern formed on one surface of a mask curved in a cylindrical shape with a predetermined radius of curvature is provided on a flexible substrate that is supported in a cylindrical or planar shape via a projection optical system. Projection optics by projecting onto the surface and moving the substrate at a predetermined speed along the surface of the substrate supported in a cylindrical or planar shape while moving the mask along the curved surface at a predetermined speed When a projected image of a pattern by a system is scanned and exposed on a substrate, the substrate is supported in a cylindrical or planar shape with a radius of curvature of the projected image surface on which the projected image of the pattern by the projection optical system is formed in a best focus state. When the radius of curvature of the surface of the substrate is Rp, the moving speed of the pattern image moving along the projected image plane by the movement of the mask is Vm, and the predetermined speed along the surface of the substrate is Vp, Vm when Rm <Rp. > V Set, the scanning exposure method of setting the Vm <Vp For Rm> Rp is provided.

  According to the fourth aspect of the present invention, an illumination optical system that guides illumination light to a cylindrical mask having a pattern on the outer peripheral surface of a curved surface curved from a predetermined axis with a constant radius of curvature, and a substrate support mechanism that supports the substrate A projection optical system for projecting the pattern of the cylindrical mask illuminated by the illumination light onto the substrate supported by the substrate support mechanism, an exchange mechanism for exchanging the cylindrical mask, and the exchange mechanism comprising the cylindrical mask An exposure apparatus is provided that includes an adjustment unit that adjusts at least one of at least part of the illumination optical system and at least part of the projection optical system when the lens is replaced with a cylindrical mask having a different diameter.

  According to the fifth aspect of the present invention, one of a plurality of cylindrical masks having a pattern on the outer peripheral surface curved in a cylindrical shape with a constant radius from a predetermined axis and having different diameters are attached in a replaceable manner, A mask holding mechanism that rotates around the predetermined axis, an illumination system that irradiates illumination light onto the pattern of the cylindrical mask, and a substrate that is exposed with light from the pattern of the cylindrical mask irradiated with illumination light. An adjustment that adjusts a distance between at least the predetermined axis and the substrate support mechanism in accordance with a diameter of the cylindrical mask mounted on the mask holding mechanism and a substrate support mechanism that supports the curved surface or plane. An exposure apparatus is provided that includes a portion.

  According to a sixth aspect of the present invention, there is provided a device manufacturing system comprising the exposure apparatus described above and a substrate supply apparatus that supplies the substrate to the exposure apparatus.

  According to the seventh aspect of the present invention, by using the exposure apparatus described above, exposing the substrate to the pattern of the cylindrical mask and processing the exposed substrate, the cylindrical mask Forming a device corresponding to the pattern.

  According to the aspect of the present invention, the displacement of the image position caused by any one of the projection image surface on which the pattern image is formed and the surface of the substrate on which the pattern image is transferred curved in the scanning exposure direction of the substrate ( It is possible to increase the exposure width during scanning exposure while suppressing (image displacement), and to obtain a substrate on which a pattern image is transferred with high quality with high productivity.

  According to another aspect of the present invention, it is possible to provide an exposure apparatus, a device manufacturing system, and a device manufacturing method capable of high-quality pattern transfer even when cylindrical masks having different diameters are mounted within a predetermined range. it can.

FIG. 1 is a diagram illustrating a configuration of a device manufacturing system according to the first embodiment. FIG. 2 is a view showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the first embodiment. FIG. 3 is a view showing the arrangement of illumination areas and projection areas of the exposure apparatus shown in FIG. FIG. 4 is a diagram showing the configuration of the illumination optical system and the projection optical system of the exposure apparatus shown in FIG. FIG. 5 is a diagram exaggeratingly showing the behavior of the illumination light beam and the projection light beam in the mask. FIG. 6 is a diagram schematically showing how the illumination light beam and the projected light beam travel in the polarization beam splitter in FIG. FIG. 7 is an explanatory diagram exaggeratingly showing the relationship between the movement of the projection image plane of the mask pattern and the movement of the exposure surface of the substrate. FIG. 8A is a graph showing an example of a change in the image shift amount and difference amount within the exposure width when there is no difference in the peripheral speed between the projection image surface and the exposure surface. FIG. 8B is a graph showing an example of a change in the image shift amount and difference amount within the exposure width when there is a difference in the peripheral speed between the projection image surface and the exposure surface. FIG. 8C is a graph showing an example of a change in the difference amount of the image within the exposure width when the difference in peripheral speed between the exposure surface and the projection image surface is changed. FIG. 9 is a graph showing an example of a change in contrast ratio within the exposure width of a pattern projection image that changes depending on the presence or absence of a difference in peripheral speed between the projection image surface and the exposure surface. FIG. 10 is a view showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the second embodiment. FIG. 11 is an explanatory diagram exaggeratingly showing the relationship between the movement of the projection image plane of the mask pattern and the movement of the exposure surface of the substrate. FIG. 12 is a graph illustrating an example of a change in the amount of image shift within an exposure width that varies depending on the presence or absence of a difference in peripheral speed between the projection image surface and the exposure surface in the second embodiment. FIG. 13A is a diagram showing the light intensity distribution of the projected image of the L & S pattern on the mask M. FIG. FIG. 13B is a diagram illustrating a light intensity distribution of a projected image of an isolated line (ISO) pattern on the mask M. FIG. 14 is a graph simulating the contrast value and contrast ratio of the projected image of the L & S pattern in a state where there is no peripheral speed difference (before correction). FIG. 15 is a graph simulating the contrast value and contrast ratio of the projected image of the L & S pattern in a state where there is a peripheral speed difference (after correction). FIG. 16 is a graph simulating the contrast value and contrast ratio of a projected image of an isolated (ISO) pattern in a state where there is no peripheral speed difference (before correction). FIG. 17 is a graph simulating the contrast value and contrast ratio of a projected image of an isolated (ISO) pattern in a state where there is a peripheral speed difference (after correction). FIG. 18 is a graph showing a relationship between the image displacement amount (deviation amount) and the exposure width when the peripheral speed of the projection image surface of the mask M is changed with respect to the moving speed of the exposure surface on the substrate. FIG. 19 is a graph showing an example of a simulation for evaluating the optimum exposure width based on the evaluation values Q1 and Q2 obtained using the shift amount and the resolving power. FIG. 20 is a view showing the overall arrangement of an exposure apparatus (substrate processing apparatus) according to the third embodiment. FIG. 21 is a view showing the overall arrangement of an exposure apparatus (substrate processing apparatus) according to the fourth embodiment. FIG. 22 is an explanatory diagram showing the relationship between the movement of the projection image plane of the mask pattern and the movement of the exposure surface of the substrate. FIG. 23 is a view showing the overall arrangement of an exposure apparatus according to the fifth embodiment. FIG. 24 is a flowchart showing a procedure for exchanging the mask used by the exposure apparatus with another mask. FIG. 25 is a diagram showing the relationship between the position of the field area on the mask side of the odd-numbered first projection optical system and the position of the field area on the mask side of the even-numbered second projection optical system. FIG. 26 is a perspective view showing a mask having on the surface an information storage unit storing mask information. FIG. 27 is a schematic diagram of an exposure condition setting table in which exposure conditions are described. FIG. 28 is a diagram schematically showing the behavior of the illumination light beam and the projection light beam between masks having different diameters based on FIG. FIG. 29 is a diagram showing an arrangement change of an encoder head or the like when the mask is replaced with a mask having a different diameter. FIG. 30 is a diagram of a calibration apparatus. FIG. 31 is a diagram for explaining calibration. FIG. 32 is a side view showing an example in which a mask is rotatably supported using an air bearing. FIG. 33 is a perspective view showing an example in which a mask is rotatably supported using an air bearing. FIG. 34 is a view showing the overall arrangement of an exposure apparatus according to the sixth embodiment. FIG. 35 is a view showing the overall arrangement of an exposure apparatus according to the seventh embodiment. FIG. 36 is a perspective view showing an example of a partial structure of the support mechanism in the exposure apparatus for the reflective cylindrical mask M. FIG. FIG. 37 is a flowchart showing a device manufacturing method.

  DESCRIPTION OF EMBODIMENTS Embodiments (embodiments) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited by the contents described in the following embodiments. The constituent elements described below include those that can be easily assumed by those skilled in the art and those that are substantially the same. Furthermore, the constituent elements described below can be appropriately combined. In addition, various omissions, substitutions, or changes of components can be made without departing from the scope of the present invention. For example, although the following embodiment demonstrates as a case where a flexible display is manufactured as a device, it is not limited to this. As a device, a wiring board on which a wiring pattern made of copper foil or the like is formed, a board on which a large number of semiconductor elements (transistors, diodes, etc.) are formed, or the like can be manufactured.

[First Embodiment]
In the first embodiment, a substrate processing apparatus that performs exposure processing on a substrate is an exposure apparatus. The exposure apparatus is incorporated in a device manufacturing system that manufactures devices by performing various processes on the exposed substrate. First, a device manufacturing system will be described.

<Device manufacturing system>
FIG. 1 is a diagram illustrating a configuration of a device manufacturing system according to the first embodiment. A device manufacturing system 1 shown in FIG. 1 is a line (flexible display manufacturing line) for manufacturing a flexible display as a device. Examples of the flexible display include an organic EL display. This device manufacturing system 1 sends out the substrate P from the supply roll FR1 in which the flexible substrate P is wound in a roll shape, and continuously performs various processes on the delivered substrate P. A so-called roll-to-roll system is adopted in which the processed substrate P is wound around the collection roll FR2 as a flexible device. In the device manufacturing system 1 according to the first embodiment, a substrate P that is a film-like sheet is sent out from the supply roll FR1, and the substrates P sent out from the supply roll FR1 are sequentially supplied to n processing apparatuses U1, U2. , U3, U4, U5,..., Un, and the winding roll FR2 is shown as an example. First, the board | substrate P used as the process target of the device manufacturing system 1 is demonstrated.

  As the substrate P, for example, a foil (foil) made of a metal or an alloy such as a resin film or stainless steel is used. Examples of the resin film material include polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, polystyrene resin, and vinyl acetate resin. 1 or 2 or more are included.

  As the substrate P, for example, it is desirable to select a substrate whose thermal expansion coefficient is not remarkably large so that deformation amounts due to heat received in various processes applied to the substrate P can be substantially ignored. The thermal expansion coefficient may be set smaller than a threshold corresponding to the process temperature or the like, for example, by mixing an inorganic filler with a resin film. The inorganic filler may be, for example, titanium oxide, zinc oxide, alumina, silicon oxide or the like. The substrate P may be a single layer of ultrathin glass having a thickness of about 100 μm manufactured by a float process or the like, or a laminate in which the above resin film, foil, or the like is bonded to the ultrathin glass. It may be.

  The substrate P thus configured becomes a supply roll FR1 by being wound in a roll shape, and this supply roll FR1 is mounted on the device manufacturing system 1. The device manufacturing system 1 to which the supply roll FR1 is mounted repeatedly executes various processes for manufacturing one device on the substrate P sent out from the supply roll FR1. For this reason, the processed substrate P is in a state where a plurality of devices are connected. That is, the substrate P sent out from the supply roll FR1 is a multi-sided substrate. The substrate P was previously activated by modifying its surface by a predetermined pretreatment, or a fine partition structure (uneven structure) for precise patterning was formed on the surface by an imprint method or the like. It may be a thing.

  The processed substrate P is recovered as a recovery roll FR2 by being wound into a roll. The collection roll FR2 is attached to a dicing device (not shown). The dicing apparatus to which the collection roll FR2 is mounted divides the processed substrate P for each device (dicing) to form a plurality of devices. Regarding the dimensions of the substrate P, for example, the dimension in the width direction (short direction) is about 10 cm to 2 m, and the dimension in the length direction (long direction) is 10 m or more. In addition, the dimension of the board | substrate P is not limited to an above-described dimension.

  In FIG. 1, an orthogonal coordinate system in which the X direction, the Y direction, and the Z direction are orthogonal to each other is shown. The X direction is a direction connecting the supply roll FR1 and the recovery roll FR2 in the horizontal plane, and is the left-right direction in FIG. The Y direction is a direction orthogonal to the X direction in the horizontal plane, and is the front-rear direction in FIG. The Y direction is the axial direction of the supply roll FR1 and the recovery roll FR2. The Z direction is the vertical direction, and is the vertical direction in FIG.

  The device manufacturing system 1 includes a substrate supply device 2 that supplies a substrate P, processing devices U1 to Un that perform various processes on the substrate P supplied by the substrate supply device 2, and processing is performed by the processing devices U1 to Un. The substrate recovery apparatus 4 that recovers the processed substrate P and the host controller 5 that controls each device of the device manufacturing system 1 are provided.

  A supply roll FR1 is rotatably mounted on the substrate supply apparatus 2. The substrate supply apparatus 2 includes a driving roller R1 that sends out the substrate P from the mounted supply roll FR1, and an edge position controller EPC1 that adjusts the position of the substrate P in the width direction (Y direction). The driving roller R1 rotates while sandwiching both front and back surfaces of the substrate P, and feeds the substrate P to the processing apparatuses U1 to Un by feeding the substrate P in the transport direction from the supply roll FR1 to the collection roll FR2. At this time, the edge position controller EPC1 moves the substrate P in the width direction so that the position at the end (edge) in the width direction of the substrate P is within a range of about ± 10 μm to several tens μm with respect to the target position. To correct the position of the substrate P in the width direction.

  A recovery roll FR2 is rotatably mounted on the substrate recovery apparatus 4. The substrate recovery apparatus 4 includes a drive roller R2 that draws the processed substrate P toward the recovery roll FR2, and an edge position controller EPC2 that adjusts the position of the substrate P in the width direction (Y direction). The substrate collection device 4 rotates while sandwiching the front and back surfaces of the substrate P by the driving roller R2, pulls the substrate P in the transport direction, and rotates the collection roll FR2, thereby winding the substrate P. At this time, the edge position controller EPC2 is configured in the same manner as the edge position controller EPC1, and corrects the position in the width direction of the substrate P so that the end portion (edge) in the width direction of the substrate P does not vary in the width direction. .

  The processing device U1 is a coating device that applies a photosensitive functional liquid to the surface of the substrate P supplied from the substrate supply device 2. As the photosensitive functional liquid, for example, a photoresist, a photosensitive silane coupling material (for example, a photosensitive lyophobic modifier, a photosensitive plating reducing material, etc.), a UV curable resin liquid, or the like is used. The processing apparatus U1 is provided with a coating mechanism Gp1 and a drying mechanism Gp2 in order from the upstream side in the transport direction of the substrate P. The coating mechanism Gp1 includes a pressure drum DR1 around which the substrate P is wound, and a coating roller DR2 facing the pressure drum DR1. The coating mechanism Gp1 sandwiches the substrate P between the pressure drum roller DR1 and the coating roller DR2 in a state where the supplied substrate P is wound around the pressure drum roller DR1. Then, the application mechanism Gp1 applies the photosensitive functional liquid by the application roller DR2 while rotating the impression cylinder DR1 and the application roller DR2 to move the substrate P in the transport direction. The drying mechanism Gp2 blows drying air such as hot air or dry air, removes the solute (solvent or water) contained in the photosensitive functional liquid, and dries the substrate P coated with the photosensitive functional liquid. A photosensitive functional layer is formed on the substrate P.

  The processing device U2 heats the substrate P transported from the processing device U1 to a predetermined temperature (for example, about several tens to 120 ° C.) in order to stabilize the photosensitive functional layer formed on the surface of the substrate P. It is. The processing apparatus U2 is provided with a heating chamber HA1 and a cooling chamber HA2 in order from the upstream side in the transport direction of the substrate P. The heating chamber HA1 is provided with a plurality of rollers and a plurality of air turn bars therein, and the plurality of rollers and the plurality of air turn bars constitute a transport path for the substrate P. The plurality of rollers are provided in rolling contact with the back side of the substrate P, and the plurality of air turn bars are provided in a non-contact state on the front side of the substrate P. The plurality of rollers and the plurality of air turn bars are arranged to form a meandering transport path so as to lengthen the transport path of the substrate P. The substrate P passing through the heating chamber HA1 is heated to a predetermined temperature while being transported along a meandering transport path. The cooling chamber HA2 cools the substrate P to the environmental temperature so that the temperature of the substrate P heated in the heating chamber HA1 matches the environmental temperature of the subsequent process (processing apparatus U3). The cooling chamber HA2 is provided with a plurality of rollers, and the plurality of rollers are arranged in a meandering manner in order to lengthen the conveyance path of the substrate P, similarly to the heating chamber HA1. The substrate P passing through the cooling chamber HA2 is cooled while being transferred along a meandering transfer path. A driving roller R3 is provided on the downstream side in the transport direction of the cooling chamber HA2, and the driving roller R3 rotates while sandwiching the substrate P that has passed through the cooling chamber HA2, thereby moving the substrate P toward the processing apparatus U3. Supply.

  The processing apparatus (substrate processing apparatus) U3 projects and exposes a pattern such as a circuit for display or wiring on the substrate (photosensitive substrate) P having a photosensitive functional layer formed on the surface supplied from the processing apparatus U2. Exposure apparatus. Although details will be described later, the processing device U3 illuminates the reflective mask M with the illumination light beam, and projects and exposes the projection light beam obtained by the illumination light beam being reflected by the mask M onto the substrate P. The processing apparatus U3 includes a driving roller DR4 that sends the substrate P supplied from the processing apparatus U2 to the downstream side in the transport direction, and an edge position controller EPC3 that adjusts the position of the substrate P in the width direction (Y direction). The driving roller DR4 rotates while pinching both front and back surfaces of the substrate P, and feeds the substrate P toward the rotating drum DR5 that supports the substrate P at the exposure position by sending the substrate P downstream in the transport direction. The edge position controller EPC3 is configured in the same manner as the edge position controller EPC1, and corrects the position in the width direction of the substrate P so that the width direction of the substrate P at the exposure position becomes the target position. Further, the processing apparatus U3 includes two sets of drive rollers DR6 and DR7 that send the substrate P to the downstream side in the transport direction in a state in which the substrate P after exposure is slackened. The two sets of drive rollers DR6 and DR7 are arranged at a predetermined interval in the transport direction of the substrate P. The drive roller DR6 rotates while sandwiching the upstream side of the substrate P to be transported, and the drive roller DR7 rotates while sandwiching the downstream side of the substrate P to be transported to direct the substrate P toward the processing apparatus U4. And supply. At this time, since the substrate P is provided with a slack, it is possible to absorb fluctuations in the conveyance speed that occur on the downstream side in the conveyance direction with respect to the driving roller DR7. can do. In addition, in the processing apparatus U3, an alignment microscope that detects an alignment mark or the like formed in advance on the substrate P in order to relatively align (align) a partial image of the mask pattern of the mask M with the substrate P. AM1 and AM2 are provided.

  The processing apparatus U4 is a wet processing apparatus that performs wet development processing, electroless plating processing, and the like on the exposed substrate P conveyed from the processing apparatus U3. The processing apparatus U4 has three processing tanks BT1, BT2, BT3 hierarchized in the vertical direction (Z direction) and a plurality of rollers for transporting the substrate P therein. The plurality of rollers are arranged so as to serve as a conveyance path through which the substrate P sequentially passes through the three processing tanks BT1, BT2, and BT3. A driving roller is provided on the downstream side in the transport direction of the processing tank BT3, and the driving roller DR8 supplies the substrate P to the processing apparatus U5 by rotating while sandwiching the substrate P that has passed through the processing tank BT3. To do.

  Although illustration is omitted, the processing apparatus U5 is a drying apparatus that dries the substrate P transported from the processing apparatus U4. The processing apparatus U5 removes droplets attached to the substrate P wet-processed in the processing apparatus U4 and adjusts the moisture content of the substrate P. The substrate P dried by the processing apparatus U5 is further transferred to the processing apparatus Un through several processing apparatuses. Then, after being processed by the processing device Un, the substrate P is wound up on the recovery roll FR2 of the substrate recovery device 4.

  The host control device 5 performs overall control of the substrate supply device 2, the substrate collection device 4, and the plurality of processing devices U1 to Un. The host control device 5 controls the substrate supply device 2 and the substrate recovery device 4 to transport the substrate P from the substrate supply device 2 toward the substrate recovery device 4. Further, the host control device 5 controls the plurality of processing devices U <b> 1 to Un to perform various processes on the substrate P while synchronizing with the transport of the substrate P.

<Exposure device (substrate processing device)>
Next, the configuration of an exposure apparatus (substrate processing apparatus) as the processing apparatus U3 of the first embodiment will be described with reference to FIGS. FIG. 2 is a view showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the first embodiment. FIG. 3 is a view showing the arrangement of illumination areas and projection areas of the exposure apparatus shown in FIG. FIG. 4 is a diagram showing the configuration of the illumination optical system and the projection optical system of the exposure apparatus shown in FIG. FIG. 5 is a diagram showing a state of an illumination light beam irradiated on the mask and a projected light beam emitted from the mask. FIG. 6 is a diagram schematically showing how the illumination light beam and the projected light beam travel in the polarization beam splitter in FIG. Hereinafter, the processing apparatus U3 is referred to as an exposure apparatus U3.

  The exposure apparatus U3 shown in FIG. 2 is a so-called scanning exposure apparatus, and projects a mask pattern image formed on the outer peripheral surface of the cylindrical mask M onto the surface of the substrate P while transporting the substrate P in the transport direction. Exposure. 2 is an orthogonal coordinate system in which the X direction, the Y direction, and the Z direction are orthogonal to each other, and is an orthogonal coordinate system similar to that in FIG.

  First, the mask M used in the exposure apparatus U3 will be described. The mask M is a reflective mask using, for example, a metal cylinder. The mask M is formed in a cylindrical body having an outer peripheral surface (circumferential surface) having a curvature radius Rm with the first axis AX1 extending in the Y direction as the center. The circumferential surface of the mask M is a mask surface P1 on which a predetermined mask pattern is formed. The mask surface P1 includes a high reflection part that reflects the light beam in a predetermined direction with high efficiency and a reflection suppression part that does not reflect the light beam in the predetermined direction or reflects it with low efficiency. The mask pattern is formed by a high reflection portion and a reflection suppression portion. Here, the reflection suppressing unit only needs to reflect less light in a predetermined direction. For this reason, the reflection suppressing unit may absorb light, transmit light, or reflect (for example, irregular reflection) in a direction other than a predetermined direction. Here, the mask M can comprise a reflection suppression part with the material which absorbs light, or the material which permeate | transmits light. The exposure apparatus U3 can use a mask made of a cylindrical body of metal such as aluminum or SUS as the mask M having the above configuration. Therefore, the exposure apparatus U3 can perform exposure using an inexpensive mask.

  Note that the mask M may be formed with all or part of a panel pattern corresponding to one display device, or may be formed with a panel pattern corresponding to a plurality of display devices. In the mask M, a plurality of panel patterns may be repeatedly formed in the circumferential direction around the first axis AX1, or a plurality of small panel patterns may be repeatedly formed in a direction parallel to the first axis AX1. May be. Further, the mask M may be formed with a panel pattern for the first display device and a panel pattern for the second display device having a size different from that of the first display device. Moreover, the mask M should just have the circumferential surface used as the curvature radius Rm centering on 1st axis | shaft AX1, and is not limited to the shape of a cylindrical body. For example, the mask M may be an arc-shaped plate having a circumferential surface. In addition, the mask M may be a thin plate, or the thin plate mask M may be curved to have a circumferential surface.

  Next, the exposure apparatus U3 shown in FIG. 2 will be described. In addition to the drive rollers DR4, DR6, DR7, the rotating drum DR5, the edge position controller EPC3, and the alignment microscopes AM1, AM2, the exposure apparatus U3 includes a mask holding mechanism 11, a substrate support mechanism 12, and an illumination optical system IL. , Projection optical system PL, and lower-level control device 16. The exposure apparatus U3 irradiates the pattern surface P1 of the mask M supported by the mask holding mechanism 11 with the illumination light emitted from the light source device 13 through the illumination optical system IL and a part of the projection optical system PL. The projected light beam (imaging light) reflected by the pattern surface P1 of the mask M is projected onto the substrate P supported by the substrate support mechanism 12 via the projection optical system PL.

  The lower control device 16 controls each part of the exposure apparatus U3 and causes each part to execute processing. The lower level control device 16 may be a part or the whole of the higher level control device 5 of the device manufacturing system 1. Further, the lower level control device 16 may be a device controlled by the higher level control device 5 and different from the higher level control device 5. The lower control device 16 includes, for example, a computer.

  The mask holding mechanism 11 includes a cylindrical drum (also referred to as a mask holding drum) 21 that holds the mask M, and a first drive unit 22 that rotates the cylindrical drum 21. The cylindrical drum 21 holds the mask M so that the first axis AX1 of the mask M is the center of rotation. The first drive unit 22 is connected to the lower control device 16 and rotates the cylindrical drum 21 around the first axis AX1.

  In addition, although the cylindrical drum 21 of the mask holding mechanism 11 directly formed the mask pattern with the high reflection part and the low reflection part on the outer peripheral surface, it is not restricted to this structure. The cylindrical drum 21 as the mask holding mechanism 11 may wind and hold a thin plate-like reflective mask M following the outer peripheral surface thereof. Further, the cylindrical drum 21 as the mask holding mechanism 11 may detachably hold a plate-shaped reflective mask M that is previously curved in an arc shape with a radius Rm on the outer peripheral surface of the cylindrical drum 21.

  The substrate support mechanism 12 includes a substrate support drum 25 (rotary drum DR5 in FIG. 1) that supports the substrate P, a second drive unit 26 that rotates the substrate support drum 25, a pair of air turn bars ATB1 and ATB2, A pair of guide rollers 27 and 28 are provided. The substrate support drum 25 is formed in a cylindrical shape having an outer peripheral surface (circumferential surface) having a curvature radius Rp with the second axis AX2 extending in the Y direction as the center. Here, the first axis AX1 and the second axis AX2 are parallel to each other, and a plane passing through the first axis AX1 and the second axis AX2 is a center plane CL. A part of the circumferential surface of the substrate support drum 25 is a support surface P2 that supports the substrate P. That is, the substrate support drum 25 supports the substrate P by curving it into a cylindrical surface by winding the substrate P around the support surface P2. The second drive unit 26 is connected to the lower control device 16 and rotates the substrate support drum 25 about the second axis AX2. A pair of air turn bars ATB1 and ATB2 and a pair of guide rollers 27 and 28 are provided on the upstream side and the downstream side, respectively, in the transport direction of the substrate P with the substrate support drum 25 interposed therebetween. The guide roller 27 guides the substrate P conveyed from the driving roller DR4 to the substrate support drum 25 via the air turn bar ATB1, and the guide roller 28 passes through the substrate support drum 25 to the substrate P conveyed from the air turn bar ATB2. Is guided to the driving roller DR6.

  The substrate support mechanism 12 rotates the substrate support drum 25 by the second driving unit 26, thereby supporting the substrate P introduced into the substrate support drum 25 on the support surface P <b> 2 of the substrate support drum 25 and at a predetermined speed. Send in the scale direction (X direction).

  At this time, the lower-level control device 16 connected to the first drive unit 22 and the second drive unit 26 rotates the cylindrical drum 21 and the substrate support drum 25 synchronously at a predetermined rotation speed ratio, thereby masking the mask M. An image of the mask pattern formed on the surface P1 is continuously and repeatedly projected and exposed onto the surface of the substrate P (surface curved along the circumferential surface) wound around the support surface P2 of the substrate support drum 25. In the exposure apparatus U3, the first drive unit 22 and the second drive unit 26 serve as a moving mechanism of the present embodiment.

  The light source device 13 emits an illumination light beam EL1 that is illuminated by the mask M. The light source device 13 includes a light source 31 and a light guide member 32. The light source 31 is a light source that emits light of a predetermined wavelength. The light source 31 is, for example, a lamp light source such as a mercury lamp, a laser diode, or a light emitting diode (LED). Illumination light emitted from the light source 31 includes, for example, bright ultraviolet rays (g-line, h-line, i-line) emitted from a lamp light source, far-ultraviolet light (DUV light) such as KrF excimer laser light (wavelength 248 nm), and ArF excimer laser light. (Wavelength 193 nm). Here, it is preferable that the light source 31 emits the illumination light beam EL1 including a wavelength shorter than the i-line (365 nm wavelength). As such an illumination light beam EL1, a laser beam (355 nm wavelength) emitted from a YAG laser (third harmonic laser), a laser beam (266 nm wavelength) emitted from a YAG laser (fourth harmonic laser), Alternatively, laser light (wavelength of 248 nm) emitted from a KrF excimer laser can be used.

  The light guide member 32 guides the illumination light beam EL1 emitted from the light source 31 to the illumination optical system IL. The light guide member 32 includes an optical fiber or a relay module using a mirror. Further, when a plurality of illumination optical systems IL are provided, the light guide member 32 divides the illumination light beam EL1 from the light source 31 into a plurality, and guides the plurality of illumination light beams EL1 to the plurality of illumination optical systems IL. The light guide member 32 of the present embodiment causes the illumination light beam EL1 emitted from the light source 31 to enter the polarization beam splitter PBS as light of a predetermined polarization state. The polarizing beam splitter PBS is provided between the mask M and the projection optical system PL for incident illumination of the mask M, reflects a light beam that becomes S-polarized linearly polarized light, and transmits a light beam that becomes P-polarized linearly polarized light. To do. For this reason, the light source device 13 emits the illumination light beam EL1 in which the illumination light beam EL1 incident on the polarization beam splitter PBS becomes a linearly polarized light (S-polarized light). The light source device 13 emits a polarized laser having the same wavelength and phase to the polarization beam splitter PBS. For example, when the light beam emitted from the light source 31 is polarized light, the light source device 13 uses a polarization plane preserving fiber as the light guide member 32 and maintains the polarization state of the laser light output from the light source device 13. Guide the light as it is. For example, the light beam output from the light source 31 may be guided by an optical fiber, and the light output from the optical fiber may be polarized by a polarizing plate. That is, the light source device 13 may polarize the randomly polarized light beam by the polarizing plate when the randomly polarized light beam is guided. Further, the light source device 13 may guide the light beam output from the light source 31 by a relay optical system using a lens or the like.

  Here, as shown in FIG. 3, the exposure apparatus U3 of the first embodiment is an exposure apparatus assuming a so-called multi-lens system. 3 shows a plan view (left view of FIG. 3) of the illumination region IR on the mask M held by the cylindrical drum 21 as viewed from the −Z side, and the substrate P supported by the substrate support drum 25. A plan view (right view of FIG. 3) of the projection area PA from the + Z side is shown. 3 indicates the moving direction (rotating direction) of the cylindrical drum 21 and the substrate support drum 25. The multi-lens exposure apparatus U3 illuminates a plurality of (for example, six in the first embodiment) illumination areas IR1 to IR6 on the mask M with the illumination light beam EL1, respectively, and each illumination light beam EL1 corresponds to each illumination area IR1 to IR6. A plurality of projection light beams EL2 obtained by being reflected by the projection are projected and exposed to a plurality of projection areas PA1 to PA6 (for example, six in the first embodiment) on the substrate P.

  First, the plurality of illumination areas IR1 to IR6 illuminated by the illumination optical system IL will be described. As shown in FIG. 3, the plurality of illumination areas IR1 to IR6 have a first illumination area IR1, a third illumination area IR3, and a fifth illumination area IR5 on the mask M on the upstream side in the rotation direction across the center plane CL. And the second illumination region IR2, the fourth illumination region IR4, and the sixth illumination region IR6 are disposed on the mask M on the downstream side in the rotation direction. Each illumination region IR1 to IR6 is an elongated trapezoidal region having parallel short sides and long sides extending in the axial direction (Y direction) of the mask M. At this time, each of the trapezoidal illumination areas IR1 to IR6 is an area where the short side is located on the center plane CL side and the long side is located outside. The first illumination region IR1, the third illumination region IR3, and the fifth illumination region IR5 are arranged at predetermined intervals in the axial direction. In addition, the second illumination region IR2, the fourth illumination region IR4, and the sixth illumination region IR6 are arranged at a predetermined interval in the axial direction. At this time, the second illumination region IR2 is disposed between the first illumination region IR1 and the third illumination region IR3 in the axial direction. Similarly, the third illumination region IR3 is disposed between the second illumination region IR2 and the fourth illumination region IR4 in the axial direction. The fourth illumination region IR4 is disposed between the third illumination region IR3 and the fifth illumination region IR5 in the axial direction. The fifth illumination region IR5 is disposed between the fourth illumination region IR4 and the sixth illumination region IR6 in the axial direction. The illumination areas IR1 to IR6 are overlapped so that the triangular portions of the oblique sides of the trapezoidal illumination areas adjacent in the Y direction overlap each other when rotated in the circumferential direction (X direction) of the mask M. Is arranged). In the first embodiment, the illumination areas IR1 to IR6 are trapezoidal areas, but may be rectangular areas.

  Further, the mask M has a pattern formation region A3 where a mask pattern is formed and a pattern non-formation region A4 where a mask pattern is not formed. The pattern non-formation region A4 is a region that hardly absorbs the illumination light beam EL1, and is arranged so as to surround the pattern formation region A3 in a frame shape. The first to sixth illumination regions IR1 to IR6 are arranged so as to cover the entire width of the pattern formation region A3 in the Y direction.

  A plurality of (for example, six in the first embodiment) illumination optical systems IL are provided according to the plurality of illumination regions IR1 to IR6. The illumination light beam EL1 from the light source device 13 enters each of the plurality of illumination optical systems (divided illumination optical systems) IL1 to IL6. Each illumination optical system IL1 to IL6 guides each illumination light beam EL1 incident from the light source device 13 to each illumination region IR1 to IR6. That is, the first illumination optical system IL1 guides the illumination light beam EL1 to the first illumination region IR1, and similarly, the second to sixth illumination optical systems IL2 to IL6 transmit the illumination light beam EL1 to the second to sixth illumination regions IR2. Lead to ~ IR6. The plurality of illumination optical systems IL1 to IL6 are arranged on the side where the first, third, and fifth illumination regions IR1, IR3, and IR5 are arranged (left side in FIG. 2) with the center plane CL interposed therebetween. IL1, third illumination optical system IL3, and fifth illumination optical system IL5 are arranged. The first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5 are arranged at a predetermined interval in the Y direction. In addition, the plurality of illumination optical systems IL1 to IL6 has the second illumination on the side where the second, fourth, and sixth illumination regions IR2, IR4, and IR6 are disposed (right side in FIG. 2) with the center plane CL interposed therebetween. An optical system IL2, a fourth illumination optical system IL4, and a sixth illumination optical system IL6 are arranged. The second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are arranged at a predetermined interval in the Y direction. At this time, the second illumination optical system IL2 is disposed between the first illumination optical system IL1 and the third illumination optical system IL3 in the axial direction. Similarly, the third illumination optical system IL3, the fourth illumination optical system IL4, and the fifth illumination optical system IL5 are arranged between the second illumination optical system IL2 and the fourth illumination optical system IL4 in the axial direction. They are arranged between the system IL3 and the fifth illumination optical system IL5, and between the fourth illumination optical system IL4 and the sixth illumination optical system IL6. The first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5, and the second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are from the Y direction. They are arranged symmetrically.

  Next, the illumination optical systems IL1 to IL6 will be described with reference to FIG. Since each of the illumination optical systems IL1 to IL6 has the same configuration, the first illumination optical system IL1 (hereinafter simply referred to as the illumination optical system IL) will be described as an example.

  The illumination optical system IL Koehler-illuminates the illumination light beam EL1 from the light source device 13 onto the illumination region IR on the mask M in order to illuminate the illumination region IR (first illumination region IR1) with uniform illuminance. The illumination optical system IL is an epi-illumination system using a polarization beam splitter PBS. The illumination optical system IL includes an illumination optical module ILM, a polarization beam splitter PBS, and a quarter wavelength plate 41 in order from the incident side of the illumination light beam EL1 from the light source device 13.

  As shown in FIG. 4, the illumination optical module ILM includes a collimator lens 51, a fly-eye lens 52, a plurality of condenser lenses 53, a cylindrical lens 54, and an illumination field stop 55 in order from the incident side of the illumination light beam EL1. The plurality of relay lenses 56 are provided on the first optical axis BX1.

  The collimator lens 51 receives light emitted from the light guide member 32 and irradiates the entire surface on the incident side of the fly-eye lens 52.

  The fly-eye lens 52 is provided on the emission side of the collimator lens 51. The center of the exit side surface of the fly-eye lens 52 is disposed on the first optical axis BX1. The fly-eye lens 52 generates a surface light source image obtained by dividing the illumination light beam EL1 from the collimator lens 51 into a number of point light source images. The illumination light beam EL1 is generated from the surface light source image. At this time, the exit-side surface of the fly-eye lens 52 on which the point light source image is generated is formed by various lenses from the fly-eye lens 52 through the illumination field stop 55 to the first concave mirror 72 of the projection optical system PL described later. The reflecting surface of the first concave mirror 72 is arranged so as to be optically conjugate with the pupil plane on which it is located.

  The condenser lens 53 is provided on the emission side of the fly eye lens 52. The optical axis of the condenser lens 53 is disposed on the first optical axis BX1. The condenser lens 53 superimposes light from each of a large number of point light source images formed on the emission side of the fly-eye lens 52 on the illumination field stop 55, and irradiates the illumination field stop 55 with a uniform illuminance distribution. . The illumination field stop 55 has a trapezoidal or rectangular rectangular opening similar to the illumination region IR shown in FIG. 3, and the center of the opening is arranged on the first optical axis BX1. The opening of the illumination field stop 55 is optically connected to the illumination region IR on the mask M by the relay lens 56, the polarization beam splitter PBS, and the quarter wavelength plate 41 provided in the optical path from the illumination field stop 55 to the mask M. Arranged in a conjugate relationship. The relay lens 56 causes the illumination light beam EL1 transmitted through the opening of the illumination field stop 55 to enter the polarization beam splitter PBS. A cylindrical lens 54 is provided on the exit side of the condenser lens 53 and adjacent to the illumination field stop 55. The cylindrical lens 54 is a plano-convex cylindrical lens in which the incident side is a flat surface and the output side is a convex cylindrical lens surface. In the cylindrical lens 54, the optical axis of the cylindrical lens 54 is disposed on the first optical axis BX1. The cylindrical lens 54 converges each principal ray of the illumination light beam EL1 that irradiates the illumination region IR on the mask M in the XZ plane, and makes it parallel in the Y direction.

  The polarization beam splitter PBS is disposed between the illumination optical module ILM and the center plane CL. The polarization beam splitter PBS reflects a light beam that becomes S-polarized linearly polarized light at the wavefront dividing plane and transmits a light beam that becomes P-polarized linearly polarized light. Here, if the illumination light beam EL1 incident on the polarization beam splitter PBS is linearly polarized light of S polarization, the illumination light beam EL1 is reflected by the wavefront dividing surface of the polarization beam splitter PBS, passes through the quarter wavelength plate 41, and is circularly polarized light. The illumination area IR on the mask M is irradiated. The projection light beam EL2 reflected by the illumination area IR on the mask M is again converted from circularly polarized light to linear P polarized light by passing through the quarter-wave plate 41, and is transmitted through the wavefront splitting surface of the polarizing beam splitter PBS to project optically. Head to the system PL. The polarization beam splitter PBS preferably reflects most of the illumination light beam EL1 incident on the wavefront splitting surface and transmits most of the projection light beam EL2. The polarization splitting characteristic at the wavefront splitting plane of the polarization beam splitter PBS is expressed by the extinction ratio, but the extinction ratio also changes depending on the incident angle of the light beam toward the wavefront splitting plane. The design is made in consideration of the NA (numerical aperture) of the illumination light beam EL1 and the projection light beam EL2 so that the influence on the imaging performance is not a problem.

  FIG. 5 exaggerates the behavior of the illumination light beam EL1 applied to the illumination region IR on the mask M and the projection light beam EL2 reflected by the illumination region IR in the XZ plane (plane perpendicular to the first axis AX1). FIG. As shown in FIG. 5, the illumination optical system IL described above irradiates the illumination area IR of the mask M so that the principal ray of the projection light beam EL2 reflected by the illumination area IR of the mask M becomes telecentric (parallel system). The chief ray of the illumination light beam EL1 is intentionally made non-telecentric in the XZ plane (plane perpendicular to the axis AX1) and telecentric in the YZ plane (parallel to the center plane CL). Such a characteristic of the illumination light beam EL1 is given by the cylindrical lens 54 shown in FIG. Specifically, an intersection point Q2 between a line that passes through the central point Q1 in the circumferential direction of the illumination region IR on the mask surface P1 and goes to the first axis AX1 and a circle that is ½ of the radius Rm of the mask surface P1. When set, the curvature of the convex cylindrical lens surface of the cylindrical lens 54 is set so that each principal ray of the illumination light beam EL1 passing through the illumination region IR is directed to the intersection point Q2 on the XZ plane. In this way, each principal ray of the projection light beam EL2 reflected in the illumination region IR is in a state (telecentric) parallel to a straight line passing through the first axis AX1, the point Q1, and the intersection point Q2 in the XZ plane.

  Next, a plurality of projection areas (exposure areas) PA1 to PA6 that are projected and exposed by the projection optical system PL will be described. As shown in FIG. 3, the plurality of projection areas PA1 to PA6 on the substrate P are arranged corresponding to the plurality of illumination areas IR1 to IR6 on the mask M. That is, the plurality of projection areas PA1 to PA6 on the substrate P includes the first projection area PA1, the third projection area PA3, and the fifth projection area PA5 on the substrate P on the upstream side in the transport direction across the center plane CL. The second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are arranged on the substrate P on the downstream side in the transport direction. Each of the projection areas PA1 to PA6 is an elongated trapezoidal (rectangular) area having a short side and a long side extending in the width direction (Y direction) of the substrate P. At this time, each of the trapezoidal projection areas PA1 to PA6 is an area where the short side is located on the center plane CL side and the long side is located outside. The first projection area PA1, the third projection area PA3, and the fifth projection area PA5 are arranged at predetermined intervals in the width direction. Further, the second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are arranged at a predetermined interval in the width direction. At this time, the second projection area PA2 is arranged between the first projection area PA1 and the third projection area PA3 in the axial direction. Similarly, the third projection area PA3 is arranged between the second projection area PA2 and the fourth projection area PA4 in the axial direction. The fourth projection area PA4 is arranged between the third projection area PA3 and the fifth projection area PA5 in the axial direction. The fifth projection area PA5 is arranged between the fourth projection area PA4 and the sixth projection area PA6 in the axial direction. Similarly to the illumination areas IR1 to IR6, the projection areas PA1 to PA6 are arranged such that the triangular portions of the hypotenuses of the trapezoidal projection areas PA adjacent in the Y direction overlap with each other in the transport direction of the substrate P (overlapping). To be arranged). At this time, the projection area PA has such a shape that the exposure amount in the area where the adjacent projection areas PA overlap is substantially the same as the exposure amount in the non-overlapping area. The first to sixth projection areas PA1 to PA6 are arranged so as to cover the entire width in the Y direction of the exposure area A7 exposed on the substrate P.

  Here, in FIG. 2, when viewed in the XZ plane, the circumference from the center point of the illumination region IR1 (and IR3, IR5) on the mask M to the center point of the illumination region IR2 (and IR4, IR6) is The circumference from the center point of the projection area PA1 (and PA3, PA5) on the substrate P following the support surface P2 to the center point of the second projection area PA2 (and PA4, PA6) is set to be substantially equal. Yes.

  A plurality of projection optical systems PL (for example, six in the first embodiment) are provided according to the plurality of projection areas PA1 to PA6. A plurality of projection light beams EL2 reflected from the plurality of illumination regions IR1 to IR6 are incident on the plurality of projection optical systems (divided projection optical systems) PL1 to PL6, respectively. Each projection optical system PL1 to PL6 guides each projection light beam EL2 reflected by the mask M to each projection area PA1 to PA6. That is, the first projection optical system PL1 guides the projection light beam EL2 from the first illumination area IR1 to the first projection area PA1, and similarly, the second to sixth projection optical systems PL2 to PL6 are second to sixth. Each projection light beam EL2 from the illumination regions IR2 to IR6 is guided to the second to sixth projection regions PA2 to PA6. The plurality of projection optical systems PL1 to PL6 are arranged on the side (left side in FIG. 2) where the first, third, and fifth projection areas PA1, PA3, and PA5 are arranged with the center plane CL interposed therebetween. PL1, a third projection optical system PL3, and a fifth projection optical system PL5 are arranged. The first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5 are arranged at a predetermined interval in the Y direction. Further, the plurality of projection optical systems PL1 to PL6 has the second projection on the side where the second, fourth, and sixth projection regions PA2, PA4, and PA6 are disposed (right side in FIG. 2) with the center plane CL interposed therebetween. An optical system PL2, a fourth projection optical system PL4, and a sixth projection optical system PL6 are arranged. The second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are arranged at a predetermined interval in the Y direction. At this time, the second projection optical system PL2 is disposed between the first projection optical system PL1 and the third projection optical system PL3 in the axial direction. Similarly, the third projection optical system PL3, the fourth projection optical system PL4, and the fifth projection optical system PL5 are arranged between the second projection optical system PL2 and the fourth projection optical system PL4 in the axial direction. Arranged between the system PL3 and the fifth projection optical system PL5, and between the fourth projection optical system PL4 and the sixth projection optical system PL6. The first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5, and the second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are from the Y direction. They are arranged symmetrically.

  Again, each projection optical system PL1-PL6 is demonstrated with reference to FIG. Each of the projection optical systems PL1 to PL6 has the same configuration, and therefore the first projection optical system PL1 (hereinafter simply referred to as the projection optical system PL) will be described as an example.

  The projection optical system PL projects an image of the mask pattern in the illumination area IR (first illumination area IR1) on the mask M onto the projection area PA on the substrate P. The projection optical system PL includes the quarter-wave plate 41, the polarization beam splitter PBS, and the projection optical module PLM in order from the incident side of the projection light beam EL2 from the mask M.

  The quarter-wave plate 41 and the polarizing beam splitter PBS are also used as the illumination optical system IL. In other words, the illumination optical system IL and the projection optical system PL share the quarter wavelength plate 41 and the polarization beam splitter PBS.

  As shown in FIG. 7, the projection light beam EL2 reflected by the illumination region IR (see FIG. 3) becomes a telecentric light beam in which the principal rays are parallel to each other and enters the projection optical system PL shown in FIG. To do. The projection light beam EL2 that is circularly polarized light reflected by the illumination region IR is converted from circularly polarized light to linearly polarized light (P-polarized light) by the quarter wavelength plate 41, and then enters the polarization beam splitter PBS. The projection light beam EL2 incident on the polarization beam splitter PBS passes through the polarization beam splitter PBS and then enters the projection optical module PLM shown in FIG.

  As an example, the polarization beam splitter PBS is formed into a rectangular shape as a whole by bonding two triangular prisms (made of quartz) in the XZ plane or by holding them in contact with optical contacts. A multilayer film containing hafnium oxide or the like is formed on the bonding surface in order to efficiently perform polarization separation. Further, the surface of the polarization beam splitter PBS that receives the projection light beam EL2 from the mask M and the surface that emits the projection light beam EL2 toward the first reflection surface P3 of the first deflection member 70 of the projection optical system PL are: It is set to be perpendicular to the principal ray of the projection light beam EL2. Further, the surface of the polarization beam splitter PBS on which the illumination light beam EL1 is incident is set perpendicular to the first optical axis BX1 (see FIG. 4) of the illumination optical system IL. When there is a concern about the resistance to ultraviolet rays or laser light due to the use of an adhesive, the bonding surface of the polarizing beam splitter PBS is applied with an optical contact that does not use an adhesive.

  The projection light beam EL2 reflected by the illumination region IR becomes a telecentric light beam and enters the projection optical system PL. The projection light beam EL2 that is circularly polarized light reflected by the illumination region IR is converted from circularly polarized light to linearly polarized light (P-polarized light) by the quarter wavelength plate 41, and then enters the polarization beam splitter PBS. The projection light beam EL2 incident on the polarization beam splitter PBS passes through the polarization beam splitter PBS and then enters the projection optical module PLM.

  The projection optical module PLM is provided corresponding to the illumination optical module ILM. That is, the projection optical module PLM of the first projection optical system PL1 converts the mask pattern image of the first illumination area IR1 illuminated by the illumination optical module ILM of the first illumination optical system IL1 into the first projection area on the substrate P. Project to PA1. Similarly, the projection optical modules PLM of the second to sixth projection optical systems PL2 to PL6 are illuminated by the projection optical modules ILM of the second to sixth illumination optical systems IL2 to IL6. The image of the IR6 mask pattern is projected onto the second to sixth projection areas PA2 to PA6 on the substrate P.

  As shown in FIG. 4, the projection optical module PLM includes a first optical system 61 that forms an image of the mask pattern in the illumination region IR on the intermediate image plane P7, and at least an intermediate image formed by the first optical system 61. A second optical system 62 for re-imaging a part of the image on the projection area PA of the substrate P and a projection field stop 63 disposed on the intermediate image plane P7 on which the intermediate image is formed are provided. The projection optical module PLM includes a focus correction optical member 64, an image shift optical member 65, a magnification correction optical member 66, a rotation correction mechanism 67, and a polarization adjustment mechanism (polarization adjustment means) 68.

  The first optical system 61 and the second optical system 62 are, for example, telecentric catadioptric optical systems obtained by modifying a Dyson system. The first optical system 61 has its optical axis (hereinafter referred to as the second optical axis BX2) substantially orthogonal to the center plane CL. The first optical system 61 includes a first deflecting member 70, a first lens group 71, and a first concave mirror 72. The first deflecting member 70 is a triangular prism having a first reflecting surface P3 and a second reflecting surface P4. The first reflecting surface P3 is a surface that reflects the projection light beam EL2 from the polarization beam splitter PBS and causes the reflected projection light beam EL2 to enter the first concave mirror 72 through the first lens group 71. The second reflecting surface P4 is a surface on which the projection light beam EL2 reflected by the first concave mirror 72 enters through the first lens group 71 and reflects the incident projection light beam EL2 toward the projection field stop 63. . The first lens group 71 includes various lenses, and the optical axes of the various lenses are disposed on the second optical axis BX2. The first concave mirror 72 is disposed on the pupil plane of the first optical system 61 and is set in an optically conjugate relationship with a number of point light source images generated by the fly-eye lens 52.

  The projection light beam EL2 from the polarization beam splitter PBS is reflected by the first reflecting surface P3 of the first deflecting member 70, and enters the first concave mirror 72 through the upper half field region of the first lens group 71. The projection light beam EL2 incident on the first concave mirror 72 is reflected by the first concave mirror 72, passes through the lower half field of view of the first lens group 71, and enters the second reflective surface P4 of the first deflecting member 70. The projection light beam EL2 incident on the second reflection surface P4 is reflected by the second reflection surface P4, passes through the focus correction optical member 64 and the image shift optical member 65, and enters the projection field stop 63.

  The projection field stop 63 has an opening that defines the shape of the projection area PA. That is, the shape of the opening of the projection field stop 63 defines the substantial shape of the projection area PA. Therefore, the projection field stop 63 can be omitted when the shape of the opening of the illumination field stop 55 in the illumination optical system IL is a trapezoid similar to the substantial shape of the projection area PA.

  The second optical system 62 has the same configuration as the first optical system 61, and is provided symmetrically with the first optical system 61 with the intermediate image plane P7 interposed therebetween. The second optical system 62 has an optical axis (hereinafter referred to as a third optical axis BX3) that is substantially perpendicular to the center plane CL and parallel to the second optical axis BX2. The second optical system 62 includes a second deflecting member 80, a second lens group 81, and a second concave mirror 82. The second deflecting member 80 has a third reflecting surface P5 and a fourth reflecting surface P6. The third reflecting surface P5 is a surface that reflects the projection light beam EL2 from the projection field stop 63 and causes the reflected projection light beam EL2 to enter the second concave mirror 82 through the second lens group 81. The fourth reflecting surface P6 is a surface on which the projection light beam EL2 reflected by the second concave mirror 82 enters through the second lens group 81 and reflects the incident projection light beam EL2 toward the projection area PA. The second lens group 81 includes various lenses, and the optical axes of the various lenses are disposed on the third optical axis BX3. The second concave mirror 82 is disposed on the pupil plane of the second optical system 62 and is set in an optically conjugate relationship with a number of point light source images formed on the first concave mirror 72.

  The projection light beam EL2 from the projection field stop 63 is reflected by the third reflecting surface P5 of the second deflecting member 80, and enters the second concave mirror 82 through the upper half field region of the second lens group 81. The projection light beam EL <b> 2 that has entered the second concave mirror 82 is reflected by the second concave mirror 82, passes through the lower half field of view of the second lens group 81, and enters the fourth reflecting surface P <b> 6 of the second deflecting member 80. The projection light beam EL2 incident on the fourth reflection surface P6 is reflected by the fourth reflection surface P6, passes through the magnification correction optical member 66, and is projected onto the projection area PA. Thereby, the image of the mask pattern in the illumination area IR is projected to the projection area PA at the same magnification (× 1).

  The focus correction optical member 64 is disposed between the first deflection member 70 and the projection field stop 63. The focus correction optical member 64 adjusts the focus state of the mask pattern image projected onto the substrate P. For example, the focus correction optical member 64 is formed by superposing two wedge-shaped prisms in opposite directions (in the opposite direction in the X direction in FIG. 4) so as to form a transparent parallel plate as a whole. By sliding the pair of prisms in the direction of the slope without changing the distance between the faces facing each other, the thickness of the parallel plate is made variable. As a result, the effective optical path length of the first optical system 61 is finely adjusted, and the focus state of the mask pattern image formed on the intermediate image plane P7 and the projection area PA is finely adjusted.

  The image shifting optical member 65 is disposed between the first deflecting member 70 and the projection field stop 63. The image shift optical member 65 adjusts the image of the mask pattern projected onto the substrate P so as to be movable in the image plane. The image shifting optical member 65 is composed of a transparent parallel flat glass that can be tilted in the XZ plane of FIG. 4 and a transparent parallel flat glass that can be tilted in the YZ plane of FIG. By adjusting the respective tilt amounts of the two parallel flat glass plates, the image of the mask pattern formed on the intermediate image plane P7 and the projection area PA can be slightly shifted in the X direction and the Y direction.

  The magnification correcting optical member 66 is disposed between the second deflection member 80 and the substrate P. In the magnification correcting optical member 66, for example, a concave lens, a convex lens, and a concave lens are arranged coaxially at predetermined intervals, the front and rear concave lenses are fixed, and the convex lens between them is moved in the optical axis (principal ray) direction. It is configured. As a result, the mask pattern image formed in the projection area PA is isotropically enlarged or reduced by a small amount while maintaining the telecentric imaging state. The optical axes of the three lens groups constituting the magnification correcting optical member 66 are inclined in the XZ plane so as to be parallel to the principal ray of the projection light beam EL2.

  The rotation correction mechanism 67 is a mechanism that slightly rotates the first deflection member 70 around an axis parallel to the Z axis by an actuator (not shown), for example. The rotation correction mechanism 67 can slightly rotate the image of the mask pattern formed on the intermediate image plane P7 within the intermediate image plane P7 by the rotation of the first deflection member 70.

  The polarization adjusting mechanism 68 adjusts the polarization direction by rotating the quarter-wave plate 41 around an axis orthogonal to the plate surface by an actuator (not shown), for example. The polarization adjusting mechanism 68 can adjust the illuminance of the projection light beam EL2 projected on the projection area PA by rotating the quarter wavelength plate 41.

  In the projection optical system PL configured as described above, the projection light beam EL2 from the mask M is emitted from the illumination region IR in a telecentric state (each principal ray is parallel to each other), and the ¼ wavelength plate 41 and the polarization are emitted. The light enters the first optical system 61 through the beam splitter PBS. The projection light beam EL2 incident on the first optical system 61 is reflected by the first reflecting surface (plane mirror) P3 of the first deflecting member 70 of the first optical system 61, passes through the first lens group 71, and is reflected by the first concave mirror 72. Reflected. The projection light beam EL2 reflected by the first concave mirror 72 passes through the first lens group 71 again and is reflected by the second reflecting surface (planar mirror) P4 of the first deflecting member 70, and the focus correction optical member 64 and the image shifter. The light passes through the optical member 65 and enters the projection field stop 63. The projection light beam EL2 that has passed through the projection field stop 63 is reflected by the third reflecting surface (planar mirror) P5 of the second deflecting member 80 of the second optical system 62, and then reflected by the second concave mirror 82 through the second lens group 81. Is done. The projection light beam EL2 reflected by the second concave mirror 82 passes through the second lens group 81 again, is reflected by the fourth reflecting surface (plane mirror) P6 of the second deflecting member 80, and enters the magnification correcting optical member 66. . The projection light beam EL2 emitted from the magnification correcting optical member 66 is incident on the projection area PA on the substrate P, and an image of the mask pattern appearing in the illumination area IR is projected to the projection area PA at the same magnification (× 1). .

  In the present embodiment, the second reflecting surface (plane mirror) P4 of the first deflecting member 70 and the third reflecting surface (plane mirror) P5 of the second deflecting member 80 are relative to the center plane CL (or the optical axes BX2, BX3). The first reflecting surface (plane mirror) P3 of the first deflecting member 70 and the fourth reflecting surface (plane mirror) P6 of the second deflecting member 80 are center plane CL (or light). An angle other than 45 ° is set with respect to the axes BX2, BX3). The angle α ° (absolute value) of the first deflecting member 70 with respect to the center plane CL (or the optical axis BX2) of the first reflecting surface P3 is the straight line and center passing through the point Q1, the intersection point Q2, and the first axis AX1 in FIG. When the angle between the surface CL and the surface CL is θ °, the relationship is α ° = 45 ° + θ ° / 2. Similarly, the angle β ° (absolute value) with respect to the center plane CL (or the optical axis BX2) of the fourth reflecting surface P6 of the second deflecting member 80 is within the projection area PA in the circumferential direction of the outer peripheral surface of the substrate support drum 25. When the angle in the ZX plane between the principal ray of the projection light beam EL2 passing through the center point and the center plane CL is ε °, the relationship is β ° = 45 ° + ε ° / 2. The angle ε varies depending on the structural dimensions of the projection optical system PL on the mask M side and the substrate P side, the dimensions of the polarizing beam splitter PBS, the illumination area IR, the circumferential dimension of the projection area PA, and the like. It is set to about 10 ° to 30 °.

<Relationship Between Projection Image Surface of Mask Pattern and Exposure Surface of Substrate>
FIG. 7 is an explanatory view exaggeratingly showing the relationship between the projection image surface Sm of the cylindrical pattern surface P1 of the mask M and the exposure surface Sp of the substrate P supported in a cylindrical shape. Next, the relationship between the projection image plane of the mask pattern and the exposure plane of the substrate in the exposure apparatus U3 of the first embodiment will be described with reference to FIG.

  In the exposure apparatus U3, the projection light beam EL2 is imaged by the projection optical system PL, so that the projection image plane Sm of the pattern of the mask M is formed. The projection image plane Sm is a position where the pattern of the mask M is imaged, and is a position where the focus is best. Note that a surface other than the best focus may be used instead of the projection image surface Sm. For example, the surface may be formed at a position away from the best focus by a certain distance. Here, as described above, the mask M is arranged on a curved surface (curved in the ZX plane) having a radius of curvature Rm. Since the projection magnification of the projection optical system PL is the same magnification, the projection image plane Sm is also approximately the center line AX1 extending in the Y direction in the range of the exposure width 2A that is the circumferential dimension of the projection area PA. It can be regarded as a part of a curved surface with a radius of curvature Rm centered on '. Further, as described above, since the substrate P is held on the support surface P2 of the cylindrical substrate support drum 25, the exposure surface Sp on the surface of the substrate P is a part of a curved surface (curved in the ZX plane) having a curvature radius Rp. It becomes. Further, if the center line AX1 ′, which is the center of curvature of the projection image surface Sm, and the center axis AX2 of the substrate support drum 25 are parallel to each other and are included in the surface KS parallel to the YZ surface, the surface KS has an exposure width 2A. The projection image plane Sm having a radius Rm and the exposure plane Sp having a radius Rp are positioned so as to include a tangent line Cp extending in the Y direction. For the sake of explanation, the radius Rp of the exposure surface Sp and the radius Rm of the projection image surface Sm are set to a relationship of Rp> Rm.

  Here, the cylindrical drum 21 that holds the mask M is rotated at an angular velocity ωm by the first driving unit 22, and the substrate support drum 25 that supports the substrate P (exposure surface Sp) is rotated at the angular velocity ωp by the second driving unit 26. It shall be. A plane that is orthogonal to the plane KS and includes a tangent line Cp between the projection image plane Sm and the exposure plane Sp is defined as a reference plane HP. It is assumed that the reference plane HP is parallel to the XY plane, and the reference plane HP moves in the X direction at a virtual moving speed V (constant speed). The moving speed V coincides with the moving speed (circumferential speed) in the circumferential direction of the projection image surface Sm and the exposure surface Sp. The exposure area (projection area PA) of the present embodiment has a width of 2A around the tangent line Cp between the projection image plane Sm and the exposure plane Sp in a direction parallel to the reference plane HP. That is, the exposure area (projection area PA) includes an area including a position moved by a distance A in each of the + X direction and the −X direction from the tangent line Cp between the projection image plane Sm and the exposure plane Sp in the movement direction of the reference plane HP. It becomes.

  Since the projection image surface Sm rotates on the surface of the curvature radius Rm at the angular velocity ωm, the specific point on the projection image surface Sm existing on the tangent line Cp rotates by θm = ωm · t after the elapse of time t. Therefore, the specific point is located at the point Cp1 moved by Xm = Rm · sin (θm) in the + X direction when viewed on the reference plane HP. On the other hand, when the specific point existing on the tangent line Cp moves linearly at the moving speed V along the reference plane HP, the specific point is located at the point Cp0 moved by V · t in the + X direction after the elapse of time t. To do. Therefore, the amount of movement in the X direction when the specific point on the tangent line Cp moves along the projection image plane Sm after the elapse of time t, and the amount of movement in the X direction when moved linearly along the reference plane HP. The deviation amount Δ1 is Δ1 = V · t−Xm = V · t−Rm · sin (θm).

  Similarly, since the exposure surface Sp rotates on the surface of the curvature radius Rp with an angular velocity ωp, a specific point on the exposure surface Sp existing on the tangent line Cp is a time point after elapse of time t on the reference surface HP. , Θp = ωp · t. Therefore, the specific point on the exposure surface Sp is located at the point Cp2 moved by Xp = Rp · sin (θp) in the + X direction. Therefore, the difference between the X-direction movement amount when the specific point on the tangent line Cp moves along the exposure surface Sp after the elapse of time t and the X-direction movement amount when the specific point moves linearly along the reference surface HP. The amount Δ2 is Δ2 = V · t−Xp = V · t−Rp · sin (θp). The deviation amounts Δ1 and Δ2 are also referred to as projection errors when a point on the cylindrical surface is projected onto a plane (reference plane HP). As described above with reference to FIG. 5, in the present embodiment, the projection image of the pattern of the mask M is projected onto the exposure surface Sp in a telecentric state within the projection area PA having the exposure width 2A shown in FIG. That is, in the XZ plane, each point on the projection image plane Sm is projected onto the exposure surface Sp along a line parallel to the plane KS (a line perpendicular to the reference plane HP). For this reason, the point Cp1 (position Xm) on the projection image plane Sm corresponding to the point Cp0 on the reference plane HP is projected to the same position Xm in the X direction on the exposure plane Sp. Deviation occurs from the position Xp of the point Cp2 on the exposure surface Sp corresponding to the point Cp0. The main cause of this deviation is because the radius Rm of the projection image surface Sm and the radius Rp of the exposure surface Sp are different.

  Thus, when there is a difference between the radius Rm and the radius Rp, the difference between the deviation amount Δ1 of the point Cp1 on the projection image plane Sm and the deviation amount Δ2 of the point Cp2 on the exposure surface Sp shown in FIG. The amount Δ (= Δ1−Δ2) gradually changes in accordance with the position in the X direction within the exposure width 2A. Therefore, by quantifying (simulating) the difference amount Δ of the deviation caused by the radius difference (Rm / Rp) between the projection image surface Sm and the exposure surface Sp, the pattern of the projection exposure on the substrate P can be obtained. It is possible to set an optimum exposure condition considering quality (projected image quality). The difference amount Δ is also referred to as a projection error when transferring the cylindrical projection image surface Sm onto the cylindrical exposure surface Sp.

  In FIG. 8A, as an example, the radius Rm of the projection image surface Sm is 125 mm, the radius Rp of the exposure surface Sp is 200 mm, the peripheral velocity (Vm) of the projection image surface Sm, and the peripheral velocity (Vp) of the exposure surface Sp. ) With the movement speed V, the variation of the deviation amounts Δ1 and Δ2 and the difference amount Δ is calculated within the range of ± 10 mm as the exposure width 2A. In FIG. 8A, the horizontal axis represents the coordinate position [mm] on the reference plane HP with the center of the projection area PA (position through which the surface KS passes) as the origin, and the vertical axis represents the calculated shift amounts Δ1, Δ2, and the difference amount. Δ [μm] is represented. As shown in FIG. 8A, when the peripheral velocity Vm of the projection image surface Sm and the peripheral velocity Vp of the exposure surface Sp coincide with each other, the absolute value of the difference amount Δ is a tangent line between the projection image surface Sm and the exposure surface Sp. As the distance from the Cp position (origin) in the ± X direction increases gradually. For example, when the absolute value of the difference Δ is suppressed to about 1 μm for faithful transfer of a pattern having a minimum line width of about several μm to 10 μm, the exposure width 2A of the projection area PA is calculated from the calculation result of FIG. It is necessary to make it ± 6 mm (12 mm in width) or less.

  Note that the peripheral speed Vm of the projection image surface Sm has a relationship of Vm = β · Vf depending on the projection magnification β of the projection optical system PL, where the peripheral speed of the pattern surface of the mask M held on the cylindrical drum 21 is Vf. Is set. For example, if the projection magnification β is 1.00 (equal magnification), the peripheral velocity Vf of the pattern surface of the mask M and the peripheral velocity Vp of the exposure surface Sp are set equal, and the projection magnification β is 2.00 (double magnification). ), 2 · Vf = Vp is set. In general, as shown in FIG. 8A, the peripheral speeds of the projection image surface Sm and the exposure surface Sp are set to Vm = Vp, so that the relationship of β · Vf = Vp (reference velocity relationship) is obtained. In addition, the rotational angular velocities of the cylindrical drum 21 that holds the mask M and the substrate support drum 25 that supports the substrate P are precisely controlled. However, how the difference amount Δ in FIG. 8A changes by giving a slight difference between the peripheral velocity Vm of the projection image surface Sm and the peripheral velocity Vp of the exposure surface Sp is as shown in FIG. 8C described later. As a result of simulation, by giving a slight difference between the peripheral speed Vm and the peripheral speed Vp, the usable exposure width 2A can be expanded while keeping the absolute value of the difference amount Δ small. In the present embodiment, the peripheral speed Vp of the exposure surface Sp is relatively higher than the peripheral speed Vm of the projection image surface Sm under the condition that the radius Rp of the exposure surface Sp is larger than the radius Rm of the projection image surface Sm. Lowered. Specifically, without changing the peripheral speed Vp of the exposure surface Sp, the projection image plane is set so that the peripheral speed Vm of the projection image plane Sm is slightly higher than the moving speed V of the reference plane HP shown in FIG. Only the rotational angular velocity ωm on the Sm (mask M) side was slightly changed. The changed angular velocity is ωm ′, and the rotation angle of the projection image plane Sm after the elapse of time t is θm ′. When the peripheral speed Vm of the projection image surface Sm is slightly increased with respect to the moving speed V and the shift amount Δ1 is calculated, the curve of the shift amount Δ1 graph in FIG. It changes to have.

  Therefore, in the present embodiment, by using such a tendency, the peripheral speed of the projection image surface Sm is set so that the difference amount Δ becomes zero at two symmetrical positions sandwiching the origin 0 at the position within the exposure width 2A. Vm (angular velocity ωm ′) was set. FIG. 8B is a graph showing calculation results of the difference amount Δ and the shift amounts Δ1 and Δ2 obtained after changing the peripheral velocity Vm of the projection image surface Sm. The definition of the vertical axis and the horizontal axis is the same as FIG. 8A. is there. 8B, the graph of the shift amount Δ2 is the same as that in FIG. 8A, but the graph of the shift amount Δ1 is zero at each position of +5 mm and −5 mm in the exposure width and at the origin 0. The angular velocity ωm ′ (θm ′) of the projection image surface Sm is set so that As a result, the difference amount Δ changes with a negative inclination when the position in the exposure width is within a range of ± 4 mm, and changes with a positive inclination in the outer range, and the origins 0 and +6 in the exposure width are changed. Zero at each position of .4 mm and -6.4 mm.

  When the allowable range of the difference amount Δ is, for example, about ± 1 μm, the exposure width under the condition of FIG. 8A is ± 6 mm, but the exposure width under the condition of FIG. 8B increases to about ± 8 mm. This means that the dimension in the scanning exposure direction (circumferential direction) of the projection area PA can be increased from 12 mm to 16 mm (about 33% increase). If the illumination intensity of the exposure illumination light is the same, the pattern transfer can be faithfully performed. This means that the productivity can be increased by increasing the transfer speed of the substrate P by about 33% without decreasing the degree. Further, the fact that the size of the projection area PA can be increased by 33% means that the exposure amount applied to the substrate P can be increased by that amount, and the exposure conditions can be relaxed. The exposure apparatus U3 performs servo control while measuring the rotation of the cylindrical drum 21 that holds the mask M and the rotation of the substrate support drum 25 that supports the substrate P with a high-resolution rotary encoder. High-precision rotation control can be performed while causing a difference in rotational speed.

When the peripheral speed Vp of the exposure surface Sp is made equal to the moving speed V of the reference surface HP, and the peripheral speed Vm of the projection image surface Sm is slightly higher than the moving speed V of the reference surface HP, the difference shown in FIG. The quantity Δ changes as shown in FIG. 8C. FIG. 8C shows the change rate of the peripheral speed Vm of the projection image surface Sm with respect to the peripheral speed Vp (= V) of the exposure surface Sp with respect to only the graph of the difference amount Δ in FIG. 8A, α [= (Vm−Vp). / Vp]% shows a tendency when changing from ± 0% to + 0.01%. The graph of the difference amount Δ of α = ± 0% in FIG. 8C is the same as the graph of the difference amount Δ in FIG. 8A. When the change rate α = ± 0%, the peripheral speed Vm and the peripheral speed Vp are in the same state. For example, when the change rate α = + 0.02%, the peripheral speed Vm is 0. It is 02% larger. Based on the calculation as shown in FIG. 8C, in FIG. 8B, the simulation is performed with the peripheral speed Vm of the projection image plane Sm increased by about 0.026% with respect to the reference speed V (= Vp) of the reference plane HP. went. The simulation result of FIG. 8C is obtained by replacing θm of Rm · sin (θm) in the expression for obtaining the deviation amount Δ1 of the projection image plane Sm with respect to the reference plane HP by (1 + α) · θm and changing the change rate α in various ways. can get. Actually, when V · t is replaced with A representing the position (mm) in the X direction of the exposure width, it can be easily obtained by the following equation.
Δ = Δ1−Δ2 = (A−Rm · sin [(1 + α) · A / Rm]) − Δ2

  As described above, when the radius Rm of the projection image surface Sm and the radius Rp of the exposure surface Sp are different, a slight difference is given to each moving speed (peripheral speeds Vm, Vp) of the projection image surface Sm and the exposure surface Sp. Accordingly, the setting range of various exposure conditions (the radius of the mask M, the sensitivity of the photosensitive layer, the feeding speed of the substrate P, the power of the light source for illumination, the size of the projection area PA, etc.) during the scanning exposure should be widened. Therefore, it is possible to obtain an exposure apparatus that can flexibly cope with process changes and the like.

  Next, as shown in FIG. 8B, FIG. 9 shows the contrast of the pattern image obtained on the exposure surface Sp when there is a slight difference between the peripheral speeds Vm and Vp of the projection image surface Sm and the exposure surface Sp. The description will be given with reference. In FIG. 9, the horizontal axis indicates the exposure width position (absolute value) where the origin 0 in FIGS. 8A and 7B is 0 mm, and the vertical axis indicates the contrast ratio where the value at the origin 0 is 1.00 (100%). The contrast ratio changes according to the position within the exposure width when there is no peripheral speed difference between the projection image surface Sm and the exposure surface Sp (FIG. 8A) and when there is a peripheral speed difference (FIG. 8B). It is the graph which calculated. In this embodiment, the wavelength λ of the illumination light beam EL1 (exposure light) is 365 nm, the numerical aperture NA of the projection optical system PL (PLM) shown in FIG. 4 is 0.0875, and the process constant k is 0.6. Since the maximum resolving power Rs obtained under these conditions is 2.5 μm from Rs = k · (λ / NA), an L & S (line and space) pattern of 2.5 μm was used for the calculation.

  As shown in FIG. 9, by setting the peripheral speed Vp on the surface side having a larger curvature between the projected image surface Sm of the mask pattern and the exposure surface Sp on the substrate P, slightly lower than the other peripheral speed Vm. The range of the exposure width in which a high contrast ratio can be obtained is widened. For example, when a contrast ratio of about 0.8 is required in order to maintain the quality of the pattern image transferred onto the exposure surface Sp, the exposure width in a state where there is no peripheral speed difference (Vm = Vp) is ± Whereas it is about 6 mm, it is possible to ensure an exposure width of ± 8 mm or more in a state where there is a difference in peripheral speed (Vm> Vp). If the contrast ratio may be about 0.6, the exposure width in a state where there is a peripheral speed difference (Vm> Vp) is expanded to about ± 9.5 mm. As described above, even if the dimension (exposure width 2A) of the projection area PA in the scanning exposure direction is increased by giving a slight difference between the peripheral speed Vm of the projection image surface Sm and the peripheral speed Vp of the exposure surface Sp. Pattern exposure can be performed while maintaining the contrast (image quality) of the projected pattern image. Further, since the exposure width 2A in the scanning exposure direction of the projection area PA can be increased, the feeding speed of the substrate P is further increased, or the illuminance of the exposure light (projection light beam EL2) per unit area in the projection area PA is decreased. Can be.

  By the way, as shown in FIG. 8C, when the difference Δ with respect to the position of the exposure width is simulated while gradually changing the peripheral speed difference (Vm−Vp), the projection image plane Sm of the pattern in the projection area PA The average value or the maximum value of the difference amount Δ of the deviation in the scanning exposure direction from the exposure surface Sp on the substrate P may be set to be smaller than the minimum line width (minimum dimension) of the pattern image to be transferred. preferable. For example, in the exposure width in FIG. 8B, focusing on the range from 0 mm to +6 mm, the average value of the difference amount Δ within the range is about −0.42 μm, and the maximum value is about −0.66 μm. Become. When attention is paid to the range of the exposure width from 0 mm to +8 mm, the average value of the difference Δ within the range is about −0.18 μm, and the maximum value is about +1.2 μm. Assuming that the minimum line width of the pattern image to be transferred is 2.5 μm set at the time of the simulation of FIG. 9, the average of the difference amount Δ in both the range up to the exposure width 6 mm and the range up to the exposure width 8 mm. The maximum value can be made smaller than the minimum line width of 2.5 μm.

  Further, as shown in FIG. 8B, in the change characteristic of the difference amount Δ obtained by the simulation, at least a position where the difference amount Δ is zero within the actual exposure width (dimension in the scanning exposure direction of the projection area PA) is set. It is preferable to set three places. For example, when the projection area PA is set to an exposure width of ± 8 mm, one point in the pattern image projected into the projection area PA during scanning exposure is +8 mm from the position of −8 mm within the exposure width. Move to position. During this time, one point in the pattern image is transferred onto the exposure surface Sp through a position −6.4 mm, a position 0 mm (origin), and a position +6.4 mm where the difference Δ is zero. As described above, the rotational speeds of the cylindrical drum 21 holding the mask M and the substrate support drum 25 are precisely adjusted so that the difference Δ is zero at least at three positions within the exposure width in the scanning exposure direction of the projection area PA. By controlling, the dimension (line width) error in the scanning exposure direction of the pattern image exposed in the projection area PA (exposure surface Sp) can be suppressed small, and faithful pattern transfer is possible.

As described above, the maximum resolving power Rs depends on the numerical aperture NA on the projection image plane Sm side of the projection optical system PL, the wavelength λ of the illumination light beam EL2, and the process constant k (usually 1 or less), Rs = k · It is defined by (λ / NA). In this case, if the moving speed of the reference surface HP is V, the moving distance of the reference surface HP is x, and A is the absolute value of the exposure width, the following relationship is preferably satisfied.

  This expression F (x) is an expression showing the difference amount Δ at the position x of a certain point on the reference plane HP. For the relationship between the moving speed V of the reference plane HP and the moving distance x, refer to FIG. As described above, this corresponds to time t (= x / V). By satisfying the above formula, the exposure apparatus U3 according to the present embodiment has good image quality without reducing the contrast of the projected pattern image even if the exposure width of the effective projection area PA is increased. A pattern can be formed on the substrate P.

  The exposure apparatus U3 according to the present embodiment can exchange the cylindrical drum 21 that holds the mask M. In the case of a reflective cylindrical mask, a high reflection portion and a low reflection portion (light absorption portion) as a mask pattern can be directly formed on the outer peripheral surface of the cylindrical drum 21. In that case, the mask exchange is performed for each cylindrical drum 21. At this time, the radius (diameter) of the cylindrical drum 21 of the reflective cylindrical mask newly attached to the exposure apparatus may be different from the radius of the cylindrical mask attached before the replacement. This may occur when the dimensions of the device to be exposed on the substrate P (such as the size of the display panel) are changed. In this embodiment, even in such a case, the cylindrical drum 21 is calculated by performing calculations (simulations) as shown in FIGS. 8A to 7C and FIG. 9 based on the radius of the mask pattern surface of the cylindrical drum 21 after replacement. And the rotation angular velocity difference to be set on the substrate support drum 25, the exposure width of the projection area PA to be set, the illuminance of the illumination light beam EL2 to be adjusted, or the conveyance speed of the substrate P to be adjusted (rotation speed of the substrate support drum 25) Etc. can be determined in advance. When a plurality of cylindrical drums 21 having different radii Rm, for example, in millimeters or centimeters are mounted so as to be replaceable, the exposure apparatus side bearing that supports the rotation center axis AX1 of the cylindrical drum 21 is set in the Z direction. A mechanism for adjusting is provided. Further, when changing the exposure width in the scanning exposure direction of the projection area PA as a parameter to be adjusted, for example, the illumination field stop 55 in FIG. 4 or the field stop 63 on the intermediate image plane P7 can be adjusted. As described above, the exposure apparatus U3 (substrate processing apparatus) can appropriately adjust the exposure conditions according to the mask M by adjusting the various parameters described above, and can perform exposure suitable for the mask M. it can.

  The exposure apparatus U3 relates at least one of the moving speed of the substrate P by the substrate holding mechanism 12 (substrate support drum 25) and the width of the projection area PA in the scanning exposure direction to the relationship between the projection image surface Sm and the exposure surface Sp. It is preferable to adjust the value based on the value calculated based on the conditional expression defined by the above, and further based on the value calculated taking into account the measurement result such as expansion and contraction of the substrate P during the manufacturing process. Thereby, the exposure apparatus U3 can automatically adjust various conditions.

  The exposure apparatus U3 of the present embodiment is based on the assumption that the dimension in the width direction of all pattern areas such as a display panel formed on the substrate P is larger than the dimension in the direction of the axis AX2 of the projection area PA. The six projection optical systems PL1 to PL6 are provided so that the projection areas PA by the system PL are arranged as shown in the right diagram of FIG. 3, but the number may be one or seven depending on the width of the substrate P. It may be the above.

  When a plurality of projection optical systems PL are arranged in the width direction of the substrate P, the exposure amount accumulated over the exposure width of each projection area PA during scanning exposure is a direction orthogonal to the scanning exposure direction (width direction of the substrate P). In this case, it is preferable to make it almost constant everywhere (for example, within ± several percent).

[Second Embodiment]
Next, an exposure apparatus U3a according to the second embodiment will be described with reference to FIG. In order to avoid overlapping descriptions, only different parts from the first embodiment will be described, and the same components as those in the first embodiment will be described with the same reference numerals as those in the first embodiment. FIG. 10 is a view showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the second embodiment. The exposure apparatus U3 of the first embodiment is configured to hold the substrate P passing through the projection area by the cylindrical substrate support drum 25, but the exposure apparatus U3a of the second embodiment is a flat substrate P. Is held by a movable substrate support mechanism 12a.

  In the exposure apparatus U3a of the second embodiment, the substrate support mechanism 12a includes a substrate stage 102 that holds the substrate P in a planar shape, and the substrate stage 102 along the X direction in a plane (XY plane) orthogonal to the center plane CL. And a moving device (not shown) for scanning and moving.

  Since the support surface P2 of the substrate P in FIG. 10 is a plane substantially parallel to the XY plane, the projection light beam EL2 reflected by the mask M and incident on the projection optical modules PLM (PL1 to PL6) is projected onto the substrate P. In this case, the principal ray of the projection light beam EL2 is set to be perpendicular to the XY plane.

  Also in the second embodiment, similarly to FIG. 2, the illumination region IR2 (and IR4, IR6) from the center point of the illumination region IR1 (and IR3, IR5) on the mask M when viewed in the XZ plane. ) To the center point of the projection area PA1 (and PA3, PA5) on the substrate P following the support surface P2 to the center point of the second projection area PA2 (and PA4, PA6). The length is set substantially equal.

  Also in the exposure apparatus U3a of FIG. 10, the lower-level control device 16 controls the moving device (linear motor for scanning exposure, actuator for fine movement, etc.) of the substrate support mechanism 12 and synchronizes with the rotation of the cylindrical drum 21. The stage 102 is driven. The substrate P in the present embodiment may be a flexible substrate such as a resin film or a glass plate for a liquid crystal display panel. Further, when scanning exposure is performed by precise movement of the substrate stage 102, a structure (for example, a pin chuck type, porous type flat holder, etc.) for vacuum-adsorbing the substrate P on the support surface P2 is provided. In addition, when the substrate P is only supported in a flat shape without moving the substrate stage 102, a mechanism (a non-contact state or a non-contact state) is supported on the support surface P2 with a gas layer formed by an air bearing. For example, a Bernoulli chuck type flat holder or the like) and a tension applying mechanism for applying a predetermined tension to the substrate P to maintain flatness are provided.

  Next, the relationship between the movement of the projection image plane Sm of the pattern of the mask M and the movement of the exposure plane Sp of the substrate P in the exposure apparatus U3a of the second embodiment will be described with reference to FIG. FIG. 11 is an explanatory diagram exaggeratingly showing the relationship between the projection image surface Sm of the pattern of the mask M and the exposure surface Sp on the substrate P under the same conditions and definitions as in FIG.

  The exposure apparatus U3a forms a projection image surface Sm of the pattern of the cylindrical mask M by the telecentric projection optical system PL. The projection image plane Sm is also the best focus plane on which the pattern of the mask M is formed. Again, since the pattern surface of the mask M is formed by a curved surface having a curvature radius Rm, the projection image surface Sm is also a cylindrical surface having a curvature radius Rm centered on the virtual line AX1 ′ (arc curve in the ZX plane). Part of On the other hand, since the substrate P is held in a plane by the substrate stage 102, the exposure surface Sp is a plane (a straight line in the ZX plane). Therefore, the exposure surface Sp in the present embodiment is a surface that matches the reference surface HP shown in FIG. That is, the exposure surface Sp can be regarded as a surface having an infinite curvature radius Rp (∞) or a curved surface that is extremely large with respect to the radius Rm of the projection image surface Sm.

  Since the projection image surface Sm rotates on the surface of the curvature radius Rm at an angular velocity ωm, the point Cp on the projection image surface Sm where the projection image surface Sm and the exposure surface Sp are in contact with each other after the elapse of time t has an angle θm = ωm. Located at point Cp1 rotated by t. Accordingly, the position Xm in the direction (X direction) along the reference plane HP of the point Cp1 on the projection image plane Sm is Xm = Rm · sin (θm). Further, since the exposure surface Sp is a plane coinciding with the reference surface HP, the point Cp on the exposure surface Sp where the projection image surface Sm and the exposure surface Sp are in contact with each other in the X direction is Xp = V · It is located at the point Cp0 moved by t. Therefore, as described above with reference to FIG. 7, the deviation amount Δ1 in the X direction (scanning exposure direction) between the point Cp1 on the projection image surface Sm and the point Cp0 on the exposure surface Sp after the elapse of time t is Δ1 = V · t−Rm · sin (θm).

  11 is a projection error (sin error) that occurs when the mask M or the projection image surface Sm moves at a constant angular velocity and the substrate P or the exposure surface Sp moves at a constant linear velocity. When the point Cp is zero when the point Cp is located on the center surface KS in the exposure width 2A, the deviation amount Δ1 gradually increases as the distance from the position increases in the ± X direction. During the scanning exposure, the pattern image on the projection image surface Sm is continuously accumulated and transferred onto the exposure surface Sp on the substrate P over the range of the exposure width 2A. However, due to the influence of the projection error of the shift amount Δ1, the dimension of the transferred pattern image in the scanning exposure direction has an error with respect to the dimension of the pattern on the mask M, and the transfer fidelity is lowered. .

  Therefore, also in the present embodiment, the peripheral speed of the surface with the smaller curvature radius among the projection image surface Sm and the exposure surface Sp is set slightly higher than the peripheral speed of the surface with the larger curvature radius. Thus, the same effect as in the first embodiment can be obtained. In this embodiment, since the curvature radius Rp of the exposure surface Sp and the curvature radius Rm of the projection image surface Sm are in a relationship of Rp >> Rm, the projection image is relatively relative to the moving speed V of the exposure surface Sp. The peripheral speed Vm of the surface Sm is slightly increased.

  Hereinafter, an example in which various simulations are executed with the configuration of the exposure apparatus U3a will be described with reference to FIGS. FIG. 12 is a graph showing a change in the shift amount Δ1 depending on whether or not there is a difference between the moving speed V of the exposure surface Sp (same as the peripheral speed Vp) and the peripheral speed Vm of the projection image surface Sm. 11 represents the amount of deviation Δ1 and the horizontal axis represents the exposure width as in FIGS. 8A and 7B. In each simulation after FIG. 12, the radius Rm of the mask M, that is, the radius Rm of the projection image plane Sm is set to 150 mm. As described with reference to FIG. 11, when the moving speed V (peripheral speed Vp) of the exposure surface Sp is equal to the peripheral speed Vm of the projection image surface Sm, that is, when there is no peripheral speed difference, the allowable range of the deviation amount Δ1 is set. If it is about ± 1 μm, the exposure width is in the range of about ± 5 mm.

  Therefore, the angular velocity of the projection image surface Sm is changed from ωm to ωm ′ (ωm <ωm ′) so that the peripheral velocity Vm of the projection image surface Sm is slightly higher than the moving velocity V (peripheral velocity Vp) of the exposure surface Sp. When the adjustment is made, the deviation amount Δ1 ′ changes with a negative inclination in the range of the exposure width of ± 4 mm with the origin 0 as the center, and changes with a positive inclination outside the range. If the position on the exposure width where the deviation amount Δ1 ′ is zero is about ± 6.7 mm, the exposure width where the allowable range of the deviation amount Δ1 ′ is about ± 1 μm is about ± 8 mm. This means that the exposure width that can be used as scanning exposure is expanded by about 60% compared to the case where no peripheral speed difference is given.

Next, as in FIG. 9, a slight difference is obtained when the movement speed V (= peripheral speed Vp) of the exposure surface Sp is matched with the peripheral speed Vm of the projection image surface Sm (no peripheral speed difference). A change in the contrast value (or contrast ratio) of the pattern image when the value is given (with a peripheral speed difference) will be described.
FIG. 13A shows the mask M when the numerical aperture NA on the exposure surface Sp side of the projection optical system PL is 0.0875, the wavelength of the illumination light beam EL1 is 365 nm, the process constant is 0.6, and the illumination σ is 0.7. Represents the contrast of the image obtained on the exposure surface Sp when the L & S pattern with the maximum resolving power Rs = 2.5 μm is formed. FIG. 13B shows the contrast of an image obtained on the exposure surface Sp when an isolated line (ISO) pattern having a maximum resolving power Rs = 2.5 μm obtained under the same projection conditions is projected.

  In both the 2.5 μm L & S pattern and the ISO pattern, it is preferable that the bright portion of the image has an intensity distribution CN1 close to 1.0 as the contrast value and the dark portion close to 0. The contrast value is obtained by (Imax−Imin) / (Imax + Imin) by the maximum value Imax of the light intensity in the bright part and the minimum value Imin of the light intensity in the dark part. The intensity distribution CN1 is generally in a state where the contrast is high, but the low state is that the difference (amplitude) between the maximum value Imax and the minimum value Imin is small like the intensity distribution CN2. The image intensity distribution CN1 shown in FIGS. 13A and 12B is the contrast of the stationary projection image of the 2.5 μm L & S pattern or the ISO pattern. In the case of scanning exposure, the substrate P extends over the set exposure width. During the movement, for example, the stationary intensity distribution CN1 is accumulated on the substrate P while shifting in the scanning exposure direction while shifting in accordance with the change in the difference amount Δ described in FIG. 8B or the shift amount Δ1 described in FIG. This is the final contrast of the pattern image transferred to the image.

  Next, under the projection exposure conditions described in FIGS. 13A and 12B (Rm = 150 mm, Rp = ∞, NA = 0.0875, λ = 365 nm, k = 0.6), a 2.5 μm L & S pattern is projected. 14 and 15 show the results of simulating the change in contrast value (contrast ratio) with respect to the position of the exposure width of the image. 14 and 15, the horizontal axis represents the position of the positive exposure width A, and the vertical axis represents the contrast value obtained by (Imax−Imin) / (Imax + Imin), and the contrast value at an exposure width of 0 mm is 1.0. Represents the contrast ratio when normalized. Further, FIG. 14 shows a contrast change in the case where there is no difference in peripheral speed when the moving speed V (= peripheral speed Vp) of the exposure surface Sp and the peripheral speed Vm of the projection image surface Sm are matched, and FIG. In the case where there is a peripheral speed difference in which the peripheral speed Vm of the projection image surface Sm is slightly larger than the moving speed V (= peripheral speed Vp) of the exposure surface Sp so that the change characteristic such as the amount of deviation Δ1 ′ in the medium is obtained. This represents the contrast change.

  As shown in FIG. 14, in the case of no peripheral speed difference (before correction), the contrast ratio is substantially constant when the position of the exposure width is about 0 to 4 mm from the origin, but rapidly decreases from a position of 5 mm or more. When the exposure width position is 8 mm or more, the contrast ratio is 0.4 or less, and the exposure to the photoresist may result in insufficient contrast. In the simulation, the contrast value at an exposure width position of 0 mm is about 0.934, and the contrast ratio is normalized to 1.0.

On the other hand, when there is a peripheral speed difference (after correction) as shown in FIG. 15, the contrast ratio gradually decreases from about 1.0 to about 0.8 when the position of the exposure width is 0 to 4 mm. About 0.8 is maintained between the positions 4 mm to 8 mm. In the simulation, the contrast ratio at the exposure width of 5 mm is about 0.77, and the contrast ratio at the position of 7 mm is about 0.82.
Thus, by slightly increasing the peripheral speed Vm of the projection image surface Sm with respect to the moving speed V (= peripheral speed Vp) of the planar exposure surface Sp, the projection area PA that can be set during the scanning exposure is set. The exposure width 2A can be increased.

  Further, as shown in FIG. 16, the contrast ratio of the image of the 2.5 μm ISO pattern in the case of no peripheral speed difference (before correction) is substantially constant until the exposure width position is 5 mm, but from 5 mm or more. It gradually decreases to about 0.9 at position 6 mm, about 0.6 at position 8 mm, about 0.5 at position 9 mm, and about 0.4 at position 10 mm. The contrast ratio in FIG. 16 is based on the contrast value (about 0.934) of the 2.5 μm L & S pattern image obtained at the exposure width position 0 mm in FIG. A ratio of contrast values obtained by an image (about 0.968 at a position of 0 mm) is taken. Therefore, the initial value of the contrast ratio (value at the position 0 mm) shown in FIG. 16 is about 1.04.

  On the other hand, when there is a peripheral speed difference (after correction) as shown in FIG. 17, the contrast ratio of the image of the 2.5 μm ISO pattern is 0.9 or more when the exposure width is in the range of 0 to 8 mm. Although it decreases to about 0.8 at the position 9 mm, it remains at about 0.67 even at the position 10 mm. As described above, by setting the peripheral speed Vm of the projection image surface Sm relatively slightly with respect to the moving speed V (= the peripheral speed Vp) of the planar exposure surface Sp, it can be set at the time of scanning exposure. The exposure width 2A of the projection area PA can be increased.

  By the way, a slight difference is given between the peripheral speed Vm of the projection image surface Sm and the peripheral speed Vp (or linear movement speed V) of the exposure surface Sp, and the difference amount Δ in FIG. 8B or the deviation in FIG. There is also an evaluation method that uses the relationship between the difference amount Δ or the shift amount Δ1 ′ and the resolving power Rs in order to obtain a characteristic such as the amount Δ1 ′ and to determine the optimum range of the exposure width 2A (or A). Hereinafter, the method will be described. For the sake of simplicity, the difference amount Δ in FIG. 8B and the shift amount Δ1 ′ in FIG. 12 may be read as the image displacement amount Δ.

In its evaluation method calculates the relationship of the mean / Rs of the image displacement delta, or the relationship between the average / Rs of the image displacement delta ² for each position of the exposure width. Therefore, an example of a simulation evaluation value Q1 the average / Rs of the image displacement delta, the average / Rs of the image displacement delta ² as the evaluation value Q2, FIG. 18 will be described with reference to FIG. 19. FIG. 18 is the same as the graph of the shift amount Δ1 ′ shown in FIG. 12, but the exposure width to be calculated is in the range of ± 12 mm. The sample points on the exposure width for which the shift amount Δ1 ′ (image displacement amount Δ) is calculated are spaced by 0.5 mm as in FIG.

  The average value of the image displacement amount Δ is obtained by averaging the absolute values of the respective shift amounts Δ1 'obtained from the origin 0 mm of the exposure width to the sample point of interest. For example, the average value of the image displacement amount Δ at the sample point at the position −10 mm is obtained by adding the absolute value of the shift amount Δ1 ′ obtained at each sample point between the position 0 mm and the position −10 mm (21 points in FIG. 18) It is obtained by dividing it by the number of sample points. In the case of FIG. 18, the absolute value of the deviation amount Δ1 ′ at each sample point from the position 0 mm to −10 mm is 20.86 μm, and the average value divided by the number of sample points 21 is about 0.99 μm. In addition, the resolution Rs in the simulation is 2.09 μm, where NA = 0.0875, λ = 368 nm, and process constant k = 0.5. Therefore, the evaluation value Q1 (no unit) at the exposure width position of −10 mm is about 0.48. When the above calculation is performed at each position (sample point) within the exposure width, the change tendency of the evaluation value Q1 can be seen.

Further, the average value of (image displacement amount Δ) ² is obtained by adding and averaging the values (μm ² ) obtained by squaring the absolute value of each deviation amount Δ1 ′ obtained from the origin 0 mm of the exposure width to the sample point of interest. It is a thing. In the case of FIG. 18, for example, the value obtained by squaring the absolute value of the deviation amount Δ1 ′ at each sample point from the position 0 mm to −10 mm is 42.47 μm ² , and the average value divided by the number of sample points 21 is about 2.02 μm ² . Since the resolving power Rs on the simulation is 2.09 μm, the evaluation value Q2 at the exposure width of −10 mm is about 0.97 μm. When the above calculation is performed at each position (sample point) within the exposure width, the change tendency of the evaluation value Q2 (μm) can be seen.

FIG. 19 is a graph in which the evaluation values Q1 and Q2 obtained as described above are plotted on the vertical axis and the position of the exposure width is plotted on the horizontal axis. The evaluation value Q1 (average value of image displacement amount Δ / resolution Rs) gradually changes as the exposure width (absolute value) increases, and is approximately 1.0 at a position of ± 12 mm of the exposure width. Become. This means that the average value of the image displacement amount Δ at the position of ± 12 mm substantially coincides with the resolving power Rs. On the other hand, the evaluation value Q2 (average value / resolution Rs of the image displacement delta ²⁾ is in the range up to a position ± 8 mm exposure width varying trend of equivalent evaluation value Q1, steeply increases at least 8 mm, The exposure width position is ± 1 mm (approximately 10 μm).

  Here, in the contrast change of the ISO pattern shown in FIG. 17 or the contrast change of the L & S pattern shown in FIG. 15, the contrast ratio is greatly reduced from an exposure width of 8 mm or more. The change in contrast ratio obtained in FIG. 15 and FIG. 17 is when the resolving power Rs is 2.5 μm and is not calculated with Rs = 2.09 μm, but the tendency is almost the same. Thus, the optimum exposure width reflecting the contrast change can also be determined by the evaluation method using the evaluation value Q1 or Q2 as an index.

図１０に示した第２実施形態の露光装置Ｕ３ａは、この式Ｆ’（ｘ）を上記第１実施形態の式に適用し、当該関係を満たすことで第１実施形態と同様の効果を得ることができる。In the case of the present embodiment, in the formula F (x) used in the first embodiment, the exposure surface Sp moves in the X direction in parallel with the reference surface HP at the moving speed V (circumferential speed Vp). Therefore, it is replaced by the following formula F ′ (x).

The exposure apparatus U3a of the second embodiment shown in FIG. 10 applies the equation F ′ (x) to the equation of the first embodiment and satisfies the relationship, thereby obtaining the same effect as that of the first embodiment. be able to.

[Third Embodiment]
Next, an exposure apparatus U3b according to the third embodiment will be described with reference to FIG. In order to avoid overlapping descriptions, only the parts different from the first and second embodiments will be described, and the same reference numerals as those in the first and second embodiments will be used for the same components as those in the first and second embodiments. A description will be given. FIG. 20 is a view showing the overall arrangement of an exposure apparatus (substrate processing apparatus) according to the third embodiment. The exposure apparatus U3b of the third embodiment is configured to use a reflective mask in which light reflected by the pattern surface of the mask M becomes a projected light beam. However, the exposure apparatus U3b of the third embodiment uses a mask pattern surface. A transmission type mask in which the transmitted light becomes a projection light beam is used.

  In the exposure apparatus U3b of the third embodiment, the mask holding mechanism 11a includes a cylindrical drum (mask holding drum) 21a that holds the mask M, a guide roller 93 that supports the cylindrical drum 21a, and a drive roller that drives the cylindrical drum 21a. 94 and a drive unit 96.

  The cylindrical drum 21a forms a mask surface on which the illumination area IR on the mask MA is arranged. In the present embodiment, the mask surface includes a surface (hereinafter referred to as a cylindrical surface) obtained by rotating a line segment (bus line) around an axis parallel to the line segment (cylindrical center axis). The cylindrical surface is, for example, an outer peripheral surface of a cylinder, an outer peripheral surface of a column, or the like. The cylindrical drum 21a is made of, for example, glass or quartz and has a cylindrical shape having a certain thickness, and an outer peripheral surface (cylindrical surface) forms a mask surface. That is, in the present embodiment, the illumination area on the mask MA is curved in a cylindrical surface shape having a radius of curvature Rm from the center line. A portion of the cylindrical drum 21a that overlaps the pattern of the mask M when viewed from the radial direction of the mask holding drum 21a, for example, a central portion other than both ends in the Y-axis direction of the cylindrical drum 21a is translucent to the illumination light beam EL1. Have

  The mask MA is created as a transmission type planar sheet mask in which a pattern is formed with a light-shielding layer such as chromium on one surface of a strip-shaped ultrathin glass plate (for example, a thickness of 100 to 500 μm) with good flatness, for example, It is used in a state in which it is curved along the outer peripheral surface of the cylindrical drum 21a and wound (attached) around this outer peripheral surface. The mask MA has a pattern non-formation region where no pattern is formed, and is attached to the cylindrical drum 21a in the pattern non-formation region. The mask MA can be released with respect to the cylindrical drum 21a. In the same manner as the mask M of the first embodiment, the mask MA has a mask pattern made of a light shielding layer such as chromium directly on the outer peripheral surface of the cylindrical drum 21a made of the transparent cylindrical base material, instead of being wound around the cylindrical drum 21a made of the transparent cylindrical base material. Drawing may be formed and integrated. Also in this case, the cylindrical drum 21a functions as a mask pattern holding member.

  The guide roller 93 and the drive roller 94 extend in the Y-axis direction parallel to the central axis of the cylindrical drum 21a. The guide roller 93 and the driving roller 94 are provided to be rotatable around an axis parallel to the central axis. The guide roller 93 and the driving roller 94 are provided so as not to contact the mask MA held on the cylindrical drum 21a. The drive roller 94 is connected to the drive unit 96. The drive roller 94 transmits the torque supplied from the drive unit 96 to the cylindrical drum 21a, thereby rotating the cylindrical drum 21a around the central axis.

  The illumination device 13a of this embodiment includes a light source (not shown) and an illumination optical system ILa. The illumination optical system ILa includes a plurality of (for example, six) illumination optical systems ILa1 to ILa6 arranged in the Y-axis direction corresponding to each of the plurality of projection optical systems PL1 to PL6. As the light source, various light sources can be used similarly to the above-described various illumination devices 13a. Illumination light emitted from the light source has a uniform illuminance distribution and is distributed to a plurality of illumination optical systems ILa1 to ILa6 via a light guide member such as an optical fiber.

  Each of the plurality of illumination optical systems ILa1 to ILa6 includes a plurality of optical members such as lenses, an integrator optical system, a rod lens, a fly-eye lens, and the like, and illuminates the illumination region IR with an illumination light beam EL1 having a uniform illuminance distribution. In the present embodiment, the plurality of illumination optical systems ILa1 to ILa6 are arranged inside the cylindrical drum 21a. Each of the plurality of illumination optical systems IL1a to ILa6 illuminates each illumination area on the mask MA held on the outer peripheral surface of the cylindrical drum 21a through the cylindrical drum 21a from the inside of the cylindrical drum 21a.

  The illumination device 13a guides the light emitted from the light source by the illumination optical systems ILa1 to ILa6, and irradiates the mask MA with the guided illumination light beam from the inside of the cylindrical drum 21a. The illuminating device 13a illuminates a part of the mask M (illumination region IR) held on the cylindrical drum 21a with uniform brightness by the illumination light beam EL1. In addition, the light source may be arrange | positioned inside the cylindrical drum 21a, and may be arrange | positioned outside the cylindrical drum 21a. The light source may be a device (external device) different from the exposure apparatus EX.

  Even when a transmissive mask is used as the mask, the exposure apparatus U3b, like the exposure apparatuses U3 and U3a, moves the projection image surface Sm (peripheral speed Vm) and the exposure surface Sp (V or peripheral speed). By adjusting (correcting) the relationship with Vp) in the same manner as in the second embodiment, the exposure width that can be used during scanning exposure can be expanded.

[Fourth Embodiment]
Next, an exposure apparatus U3c according to the fourth embodiment will be described with reference to FIG. In order to avoid overlapping descriptions, only different parts from the previous embodiments will be described, and the same components as those of the previous embodiments will be described with the same reference numerals. FIG. 21 is a view showing the overall arrangement of an exposure apparatus (substrate processing apparatus) according to the fourth embodiment. Each of the exposure apparatuses U3, U3a, U3b in the previous embodiments has a configuration using a cylindrical mask M held by a rotatable cylindrical drum 21 (or 21a). In the exposure apparatus U3c of the fourth embodiment, a mask holding mechanism 11b is provided that includes a mask stage 110 that holds a flat reflective mask MB and moves in the X direction along the XY plane during scanning exposure.

  In the exposure apparatus U3c of the fourth embodiment, the mask holding mechanism 11b scans the mask stage 110 holding the flat reflective mask MB and the mask stage 110 along the X direction within a plane orthogonal to the center plane CL. A moving device (not shown) for movement.

  Since the mask plane P1 of the mask MB in FIG. 21 is a plane substantially parallel to the XY plane, the principal ray of the projection light beam EL2 reflected from the mask MB is perpendicular to the XY plane. For this reason, the principal rays of the illumination light beam EL1 from the illumination optical systems IL1 to IL6 that illuminate the illumination regions IR1 to IR6 on the mask MB are also arranged so as to be perpendicular to the XY plane via the polarization beam splitter PBS. The

  When the principal ray of the projection light beam EL2 reflected from the mask MB is perpendicular to the XY plane, the first reflection surface P3 of the first deflection member 70 included in the first optical system 61 of the projection optical module PLM is polarized The projection light beam EL2 from the beam splitter PBS is reflected, and the reflected projection light beam EL2 is incident on the first concave mirror 72 through the first lens group 71. Specifically, the first reflecting surface P3 of the first deflecting member 70 is set to substantially 45 ° with respect to the second optical axis BX2 (XY surface).

  Also in the fourth embodiment, similarly to FIG. 2, the illumination region IR2 (and IR4, IR6) from the center point of the illumination region IR1 (and IR3, IR5) on the mask MB when viewed in the XZ plane. ) To the center point of the projection area PA1 (and PA3, PA5) on the substrate P along the support surface P2 of the substrate support drum 25 from the center point of the projection area PA2 (and PA4, PA4). It is set substantially equal to the circumferential distance to the center point of PA6).

  Also in the exposure apparatus U3c of FIG. 21, the low order control device 16 controls the moving device (linear motor for scanning exposure, actuator for fine movement, etc.) of the mask holding mechanism 11 and is synchronized with the rotation of the substrate support drum 25. The mask stage 110 is driven. In the exposure apparatus U3c of FIG. 21, after performing scanning exposure by synchronous movement of the mask MB in the + X direction, an operation (rewinding) of returning the mask MB to the initial position in the −X direction is required. Therefore, when the substrate support drum 25 is continuously rotated at a constant speed and the substrate P is continuously fed at a constant speed (circumferential speed Vp), pattern exposure is not performed on the substrate P during the rewinding operation of the mask MB. The panel pattern is formed in a jumped (separated) manner in the P transport direction. However, since the speed of the substrate P (peripheral speed Vp) and the speed of the mask MB at the time of scanning exposure are assumed to be 50 to 100 mm / s in practice, the mask stage 110 is used when the mask MB is rewound. For example, if the driving is performed at the maximum speed of 500 to 1000 mm / s, the margin in the transport direction between the panel patterns formed on the substrate P can be narrowed.

  Next, the relationship between the projection image plane Sm of the mask pattern and the exposure plane Sp on the substrate P in the exposure apparatus U3c of the fourth embodiment will be described with reference to FIG. 22 shows the relationship between the movement of the projection image surface Sm of the mask pattern and the movement of the exposure surface Sp of the substrate P, and reverses the relationship between the projection image surface Sm and the exposure surface Sp described in FIG. Is equivalent to That is, in FIG. 22, the pattern image formed on the projection image surface Sm having a planar shape (the curvature radius is infinite) is transferred onto the exposure surface Sp having the curvature radius Rp.

  Here, since the mask M is a plane, the projection image plane Sm (best focus plane) is also a plane. Therefore, the projected image plane Sm in FIG. 22 corresponds to the reference plane HP that moves at the speed V shown in FIG. On the other hand, the exposure surface Sp on the substrate P is a cylindrical surface (arc in the ZX plane) having a radius of curvature Rp, as shown in FIG.

  Also in this embodiment, assuming that the angular velocity of the substrate holding drum 25 (exposure surface Sp) is ωp, the projection image surface Sm and the exposure surface Sp are in contact at the position of the surface KS as in FIG. The position Xp in the X direction of the point Cp2 moved after the elapse of time t along the exposure surface Sp with the radius Rp is obtained by Xp = Rp · sin (ωp · t). Here, ωp · t is the rotation angle θp of the exposure surface Sp after the elapse of time t from the contact Cp as the origin. On the other hand, the position Xm of the point Cp0 where the contact point Cp between the projection image plane Sm and the exposure plane Sp moves along the flat projection image plane Sm after the elapse of time t is Xm = V · t (provided that V = Vm), a projection error (deviation amount or image displacement amount) occurs between the projection image surface Sm and the exposure surface Sp, as in the previous embodiments.

  When the projection error (deviation amount or image displacement amount) is a deviation amount Δ2, the deviation amount Δ2 is obtained by Δ2 = Xm−Xp, and Δ2 = V · t−Rp · sin (θp). The characteristic of the deviation amount Δ2 is the same as the graph of the deviation amount Δ2 in FIG. 8A. By giving a slight difference between the moving speed V of the projection image plane Sm and the peripheral speed Vp of the exposure surface Sp, As in the embodiment, the exposure width of the projection area PA that can be used during scanning exposure can be increased. For this purpose, it is necessary to relatively slightly increase the speed (peripheral speed) of the projection image surface Sm and the exposure surface Sp having the smaller radius of curvature. In the present embodiment, the velocity of the projection image surface Sm (peripheral velocity Vm) is smaller than the circumferential velocity Vp of the exposure surface Sp by, for example, the change rate α illustrated in FIG. The scanning exposure speed Vf is set slightly lower than the reference speed V determined based on the projection magnification β.

Here, the expression of F (x) in the first embodiment is replaced with the following expression of F ′ (x) in the case of the exposure apparatus U3c of the present embodiment.

  Here, the exposure apparatus U3c applies the formula F ′ (x) to the formula of the first embodiment and satisfies the relationship, so that the same effects as those of the above embodiments can be obtained.

  In the exposure apparatus of the present embodiment, of the mask holding mechanism and the substrate support mechanism, the one that is held by a curved surface is the first support member, and the one that is supported by the curved surface or the plane is the second support member.

  As described above, in each embodiment, the cylindrical or planar mask M is used. However, based on CAD data, a DMD (digital mirror device), an SLM (spatial light modulation element), or the like is controlled to correspond to a pattern. The same effect can be obtained even in the maskless exposure method in which the light distribution is projected onto the exposure surface Sp via a projection optical system (which may include a microlens array).

  Further, in each embodiment, the curvature radii of the projected image surface Sm of the pattern and the exposure surface Sp of the substrate P are compared, and the peripheral speed of the surface Sm and the surface Sp having the smaller curvature radius is compared during the scanning exposure. Exposure width that can be used for scanning exposure by making it slightly larger, or by relatively slightly reducing the peripheral speed (or linear movement speed) of the surface Sm and surface Sp having the larger radius of curvature. Can be expanded. The degree to which a slight difference in relative peripheral speed (or linear movement speed) is set can vary depending on the image displacement amount Δ (difference amount Δ, displacement amounts Δ1, Δ2) and the resolution Rs. For example, in the evaluation method based on the evaluation values Q1 and Q2 in FIG. 19, the resolving power Rs is set to 2.09 μm, which is determined by the numerical aperture NA of the projection optical system PL, the exposure wavelength λ, and the process constant k. . The minimum dimension (line width) of the pattern actually exposed on the substrate P is determined by the pattern formed on the mask M and the projection magnification β. If the minimum actual dimension (solid line width) in the display panel pattern to be formed on the substrate P may be 5 μm, the value of the solid line width is used as the resolving power Rs and the allowable image displacement amount Δ What is necessary is just to obtain | require the peripheral speed difference (change rate (alpha) etc.) which becomes in the range. That is, the rate of change α of the peripheral speed difference for expanding the exposure width is determined according to the resolving power Rs determined by the configuration (NA, λ) of the exposure apparatus or the minimum dimension of the pattern to be transferred onto the substrate P.

  As described above, the following scanning exposure method is performed by using the exposure apparatus shown in each embodiment. That is, a flexible substrate P on which a pattern formed on one surface of a mask (M, MB) curved in a cylindrical shape with a predetermined radius of curvature is supported in a cylindrical or planar shape via a projection optical system PL (PLM). A predetermined speed is projected along the surface (Sp) of the substrate supported in a cylindrical or planar shape while projecting onto the surface (exposure surface Sp) of the substrate and moving the mask M along the curved surface at a predetermined speed. When the substrate P is moved and the projection image of the pattern by the projection optical system is scanned and exposed on the substrate, the radius of curvature of the projection image surface Sm on which the projection image of the pattern by the projection optical system is formed in the best focus state is set. Rm (including Rm = ∞), the radius of curvature of the surface (exposure surface) Sp of the substrate P supported in a cylindrical or planar shape is Rp (including Rp = ∞), and the mask (M, MB) is moved. On the projected image plane (Sm) When the moving speed of the pattern image to be moved is Vm and the predetermined speed along the surface (exposure surface) Sp of the substrate P is Vp, Vm> Vp is set when Rm <Rp, and Rm> Rp. In this case, Vm <Vp is set.

[Fifth Embodiment]
FIG. 23 is a view showing the overall arrangement of an exposure apparatus according to the fifth embodiment. The processing device U3d corresponds to the processing device U3 shown in FIGS. Hereinafter, the processing apparatus U3d will be described as an exposure apparatus U3d. The exposure apparatus U3d has a mechanism for exchanging the mask M. Since the exposure apparatus U3d has the same structure as the above-described exposure apparatus U3, the description of the common structure is omitted in principle.

  In addition to the driving rollers R4 to R6, the edge position controller EPC3, and the alignment microscopes AM1 and AM2, the exposure apparatus U3d includes a mask holding mechanism 11, a substrate support mechanism 12, an illumination optical system (illumination system) IL, and a projection. The optical system PL and the lower-level control device 16 are included.

  The lower control device 16 controls each part of the exposure apparatus U3d and causes each part to execute processing. The lower level control device 16 may be a part or the whole of the higher level control device 5 of the device manufacturing system 1. Further, the lower level control device 16 may be a device controlled by the higher level control device 5 and different from the higher level control device 5. The lower control device 16 includes, for example, a computer. In the present embodiment, the lower-level control device 16 includes a reading device 17 that reads information about the mask M from an information storage unit (for example, a barcode, a magnetic storage medium, or an IC tag that can store information) attached to the mask M; A measuring device 18 that measures the shape, dimensions, mounting position, etc. of the mask M is connected.

  The mask holding mechanism 11 holds the cylindrical mask M (the mask pattern surface formed by the high reflection portion and the low reflection portion) by the mask holding drum 21, but the configuration is not limited to the same as in the first embodiment. It is. In the present embodiment, the mask M or the cylindrical mask includes not only the mask M but also a mask holding drum 21 (an assembly of the mask M and the mask holding drum 21) in a state where the mask M is held.

  The board | substrate support mechanism 12 supports the board | substrate P exposed with the light from the pattern of the mask M irradiated with the illumination light along the curved surface or plane. The substrate support drum 25 is formed in a cylindrical shape having an outer peripheral surface (circumferential surface) having a radius of curvature Rfa around the second axis AX2 extending in the Y direction. Here, the first axis AX1 and the second axis AX2 are parallel to each other, and a plane including the first axis AX1 and the second axis AX2 and parallel to both is defined as the center plane CL. The center plane CL is a plane determined by two straight lines (in this example, the first axis AX1 and the second axis AX2). A part of the circumferential surface of the substrate support drum 25 is a support surface P2 that supports the substrate P. In other words, the substrate support drum 25 supports and transports the substrate P by winding the substrate P around the support surface P2. As described above, the substrate support drum 25 has a curved surface (outer peripheral surface) that is curved with a certain radius (curvature radius Rfa) from the second axis AX as a predetermined axis, and a part of the substrate P is wound around the outer peripheral surface. And rotate about the second axis AX2. The second drive unit 26 is connected to the lower control device 16 and rotates the substrate support drum 25 about the second axis AX2 as the rotation center axis.

  The pair of air turn bars ATB1 and ATB2 are respectively provided on the upstream side and the downstream side in the transport direction of the substrate P with the substrate support drum 25 interposed therebetween. The pair of air turn bars ATB1 and ATB2 are provided on the surface side of the substrate P, and are disposed below the support surface P2 of the substrate support drum 25 in the vertical direction (Z direction). The pair of guide rollers 27 and 28 are respectively provided on the upstream side and the downstream side in the transport direction of the substrate P with the pair of air turn bars ATB1 and ATB2 interposed therebetween. The pair of guide rollers 27, 28 guides the substrate P, one of which is conveyed from the driving roller R4, to the air turn bar ATB1, and the other guide roller 28, which is conveyed from the air turn bar ATB2. P is guided to the driving roller R5.

  Therefore, the substrate support mechanism 12 guides the substrate P conveyed from the driving roller R4 to the air turn bar ATB1 by the guide roller 27, and introduces the substrate P that has passed through the air turn bar ATB1 into the substrate support drum 25. The substrate support mechanism 12 rotates the substrate support drum 25 by the second drive unit 26, thereby supporting the substrate P introduced into the substrate support drum 25 on the support surface P2 of the substrate support drum 25, while the air turn bar ATB2. Transport toward The substrate support mechanism 12 guides the substrate P conveyed to the air turn bar ATB2 to the guide roller 28 by the air turn bar ATB2, and guides the substrate P that has passed through the guide roller 28 to the drive roller R5.

  At this time, the low-order control device 16 connected to the first drive unit 22 and the second drive unit 26 synchronously rotates the mask holding drum 21 and the substrate support drum 25 at a predetermined rotation speed ratio, thereby The image of the mask pattern formed on the mask surface P1 is continuously and repeatedly projected and exposed on the surface of the substrate P (surface curved along the circumferential surface) wound around the support surface P2 of the substrate support drum 25.

  As shown in FIG. 2, the exposure apparatus U3d includes alignment microscopes GS1 and GS2 that detect alignment marks and the like formed in advance on the mask M on the outer peripheral surface of the mask M. Further, the exposure apparatus U3d includes encoder heads EH1 and EH2 for detecting the rotation angle of the mask M and the mask holding drum 21 and the like. These are arranged along the circumferential direction of the mask M (or the mask holding drum 21). The encoder heads EH1 and EH2 are, for example, attached to both ends of the mask holding drum 21 in the first axis AX1 direction, and engraved on the outer peripheral surface of the scale disk SD that rotates about the first axis AX1 together with the mask holding drum 21. The scale (lattice pattern engraved at a constant pitch in the circumferential direction) is read. Further, the exposure apparatus U3d measures a minute displacement in the radial direction of the outer peripheral surface (mask surface P1) of the rotating mask M, and detects a focus shift of the mask surface P1 with respect to the projection optical system PL and the mask. A foreign matter inspection apparatus CD that detects foreign matter attached on the surface P1 can be provided. These can be arranged in any orientation around the outer peripheral surface of the mask M, but it is preferable to install them in a direction avoiding the insertion / removal movement space of the mask M at the time of mask replacement.

  The scale reading position of the encoder head EH1 is the center position in the circumferential direction of the odd-numbered illumination areas IR1, IR3, IR5 on the mask M on the XZ plane orthogonal to the first axis AX1 (in FIG. 5 or FIG. 7). The scale reading position of the encoder head EH2 is set to be aligned with the center position in the circumferential direction of the even-numbered illumination areas IR2, IR4, IR6 on the mask M on the XZ plane. . Further, the scale measured by the encoder heads EH1 and EH2 may be formed together with the mask pattern on the outer peripheral surface of both end portions of the mask holding drum 21 (mask M).

  The exposure apparatus U3d has encoder heads EN1, EN2, EN3, and EN4 for detecting the rotation angle of the substrate support drum 25 and the like in addition to the alignment microscopes AM1 and AM2 for detecting marks and the like on the substrate P. . These are arranged along the circumferential direction of the substrate support drum 25. The encoder heads EN1, EN2, EN3, and EN4 are attached to both ends of the substrate support drum 25 in the direction of the second axis AX2, for example, and the outer peripheral surface of the scale disk that rotates about the second axis AX2 together with the substrate support drum 25. Alternatively, scales (lattice patterns engraved at a constant pitch in the circumferential direction) engraved on the outer peripheral surfaces at both ends in the direction of the second axis AX2 of the substrate support drum 25 are read.

  The scale reading position of the encoder head EN1 is set to be aligned with the position in the circumferential direction of the observation field of the alignment microscope AM1 on the XZ plane orthogonal to the second axis AX2, and the scale reading position of the encoder head EN4 is XZ. On the surface, it is installed so as to be aligned with the circumferential position of the observation field of the alignment microscope AM2. Similarly, the scale reading position of the encoder head EN2 is installed so as to be aligned with the center position in the circumferential direction of the odd-numbered projection areas PA1, PA3, PA5 on the substrate P. The scale reading position of the encoder head EN3 is the XZ plane. Then, it is installed so as to be aligned with the center position in the circumferential direction of the even-numbered projection areas PA2, PA4, PA6 on the substrate P.

  Furthermore, as shown in FIG. 2, the exposure apparatus U3d includes an exchange mechanism 150 for exchanging the mask M. The exchange mechanism 150 can exchange the mask M held by the exposure apparatus U3d with another mask M having the same curvature radius Rm, or can be exchanged with another mask M having a different curvature radius Rm. When replacing the mask M with the same curvature radius Rm, the replacement mechanism 150 may replace only the mask M by removing it from the mask holding drum 21, or remove the mask M together with the mask holding drum 21 from the exposure apparatus U3d. It may be exchanged. When exchanging with a mask M having a different curvature radius Rm, the exchanging mechanism 150 can replace the mask M together with the mask holding drum 21 from the exposure apparatus U3d. Even when the mask M and the mask holding drum 21 are integrated, the replacement mechanism 150 replaces the two as a single unit. The exchange mechanism 150 may have any structure as long as the mask M or the assembly of the mask M and the mask holding drum 21 can be attached to and removed from the exposure apparatus U3d.

  The exposure apparatus U3d includes the exchange mechanism 150, so that the mask P having a different diameter can be automatically mounted and the mask pattern can be exposed on the substrate P. For this reason, the device manufacturing system 1 including the exposure apparatus U3d can use the mask M having an appropriate diameter according to the dimensions of the device (display panel) to be manufactured. As a result, the device manufacturing system 1 can suppress the occurrence of blank portions where the substrate P is not used, suppress the waste of the substrate P, and reduce the manufacturing cost of the device. As described above, the exposure apparatus U3d including the exchange mechanism 150 has a large degree of freedom in selecting the dimensions of the device (display panel) manufactured by the device manufacturing system 1, and therefore does not require an excessive capital investment such as changing the exposure apparatus itself. Further, there is an advantage that display panels having different inch sizes can be efficiently manufactured.

  When the masks M having different diameters are exchanged, the illumination light beam EL1, the mask M, the projection light beam EL2, and the like are changed between the masks M because the curvature of the mask surface P1 and the position of the first axis AX1 in the Z direction are different. , The position of the illumination region IR on the mask M, the non-telecentric degree of the chief ray of the illumination light beam EL1, and the like change between the masks M having different diameters, and the encoder heads EH1, EH2 and the scale disk SD. The positional relationship of is different.

  Therefore, when the mask M of the exposure apparatus U3d is replaced with a mask M having a different diameter, a mask pattern image formed on the mask surface P1 of the mask M is projected and exposed to the substrate P with an appropriate image quality, and a multi lens. In the case of the method, it is necessary to adjust the related mechanism in the exposure apparatus U3d and parts related thereto so that the mask pattern images appearing in each of the plurality of projection areas PA1 to PA6 are joined together with good accuracy.

  In this embodiment, when the mask M having a different diameter is replaced, for example, the lower control device 16 is used as an adjustment control unit (adjustment unit), and each unit of the exposure apparatus U3d, specifically, illumination optics. Adjustment is performed such as changing the position of at least a part of the optical member constituting the system IL or the projection optical system PL, or switching a part of the optical member to a member having a different characteristic. By doing so, the exposure apparatus U3d can appropriately and satisfactorily expose the substrate P after the mask M is replaced. That is, the exposure apparatus U3d can appropriately and satisfactorily perform exposure with a large degree of freedom with respect to the device size, that is, exposure using the mask M having a different diameter. Next, an outline of a procedure for replacing the mask M used by the exposure apparatus U3d with a mask M having a different diameter or another mask M having the same diameter and a specific example of adjustment of the exposure apparatus U3d will be described.

  FIG. 24 is a flowchart showing a procedure for exchanging the mask used by the exposure apparatus with another mask. FIG. 25 is a diagram showing the relationship between the position of the field area on the mask side of the odd-numbered first projection optical system and the position of the field area on the mask side of the even-numbered second projection optical system. FIG. 26 is a perspective view showing a mask having on the surface an information storage unit storing mask information. FIG. 27 is a schematic diagram of an exposure condition setting table in which exposure conditions are described.

  When the mask M used by the exposure apparatus U3d is replaced with a mask M having a different diameter, the lower-level control device 16 shown in FIG. 23 starts the replacement operation of the mask M in step S101. Specifically, the lower level control device 16 drives the exchange mechanism 150 to remove the mask M currently mounted on the exposure apparatus U3d, and then drives the exchange mechanism 150 to place the mask M to be exchanged on the exposure apparatus U3d. Attach to. In this replacement, the replacement mechanism 150 removes the mask holding drum 21 having the mask M together with the shaft serving as the first axis AX1, and attaches the mask M and the mask holding drum 21 having different diameters to the exposure apparatus U3d. At this time, when the scale disks SD are attached to both ends of the mask holding drum 21 coaxially with the first axis AX1, it is preferable to replace the scale disks SD together.

  In the present embodiment, when the mask M having a different diameter is replaced, the first axis AX1 that is the rotation center axis of the mask holding drum 21 is based on the diameter of the mask M (mask surface P1) newly mounted on the exposure apparatus U3d. The shaft support position in the Z-axis direction is changed. For this reason, the exposure apparatus U3d has a mechanism that can move a bearing device that rotatably supports the mask holding drum 21 in the Z-axis direction.

  This bearing device is a bearing (such as a contact type such as a ball bearing or a needle bearing, an air bearing, or the like) that rotatably supports each of the shafts serving as the first shaft AX1 that protrudes from both ends of the mask holding drum 21. Non-contact type). The contact-type bearing includes an inner ring fixed to the shaft of the mask holding drum 21, an outer ring fixed to the exposure apparatus U3d, and a ball or needle sandwiched between the inner ring and the outer ring. .

  For smooth mask replacement, a structure in which the outer ring of the contact type bearing is removed from the bearing device on the main body side of the exposure apparatus U3d with both the inner ring and the outer ring of the contact type bearing attached to the shaft side of the mask holding drum 21. It is good to do. Further, the main body side bearing device of the exposure apparatus U3d includes a Z drive mechanism that adjusts the inclination in the YZ plane so that the first axis AX1 (shaft) is parallel to the second axis AX2 (Y axis). In addition, an X drive mechanism for adjusting the inclination in the XY plane is provided so that the first axis AX1 (shaft) is also parallel to the center plane CL.

  FIG. 25 shows a state in which the mask M held on the mask holding drum 21 is replaced with a mask Ma held on the mask holding drum 21a having a smaller diameter. The mask M has a radius of curvature Rm, and the mask Ma has a radius of curvature Rma (Rma <Rm). IRa in FIG. 25 is a field area (illumination optical system IL) on the mask M side of the first projection optical system (first projection optical system PL1, third projection optical system PL3, and fifth projection optical system PL5 shown in FIG. 23). Is equivalent to odd-numbered illumination areas IR1, IR3, and IR5 irradiated to the mask M, and IRb is a second projection optical system (second projection optical system PL2 shown in FIG. 4 projection optical system PL4 and sixth projection optical system PL6) field area on the mask M side (corresponding to even-numbered illumination areas IR2, IR4, IR6 in which the illumination light beam EL1 from the illumination optical system IL is irradiated onto the mask M) It is.

  In the present embodiment, before and after replacing the mask M with the mask Ma, the position of the field area IRa of the first projection optical system in the Z-axis direction and the position of the field area IRb of the second projection optical system in the Z direction. It is preferable not to change. The Z-axis direction is orthogonal to both the rotation center axis (first axis AX) of the mask M (mask holding drum 21) and the rotation center axis (second axis AX2) of the substrate support drum 25, and along the center plane CL. Direction. By adjusting the spatial arrangement relationship between the field region IRa and the field region IRb in the Z-axis direction before and after the replacement of the mask M, the illumination optical system IL and the projection optical system PL can be adjusted and used for various measurements. It is possible to minimize position adjustment of equipment (encoder heads EH1, EH2, alignment microscopes GS1, GS2, etc.) or change of parts related to these.

  This embodiment is based on the multi-lens method as shown in FIG. 23, but projects a pattern in the illumination area IR set at one place in the circumferential direction of the outer peripheral surface of the mask M into the projection area PA. In the case of an exposure apparatus in which a single projection optical system or a plurality of projection optical systems are arranged in the Y direction, the respective centers in the circumferential direction of the illumination region IR and the projection region PA are preferably arranged on the center plane CL. In such an exposure apparatus, when a mask M having a radius (curvature radius) Rm is replaced with a cylindrical mask Ma having a radius Rma (Rma <Rm), the rotation center (shaft) of the mask Ma has a radius difference (Rma−) in the Z direction. The bearing device may be Z-driven so as to shift the position by Rm).

  However, in the multi-lens system of the present embodiment, the field area IRa of the odd-numbered projection optical system (conjugate with the odd-numbered projection area PA) is provided at one of the two circumferentially separated positions on the outer peripheral surface of the mask M. ) And the field area IRb of the even-numbered projection optical system (the object plane conjugate with the even-numbered projection area PA) is located on the other side, so that the mask Ma is simply moved in the Z direction by the radius difference (Rma−Rm). Even if the position is changed, good focus accuracy (or good joint position accuracy) may not be obtained depending on the degree of radius difference. Therefore, in the present embodiment, the outer peripheral surface of the exchanged cylindrical mask is in both the field area IRa (object surface) of the odd-numbered projection optical system and the field area IRb (object surface) of the even-numbered projection optical system. The bearing device is Z-driven so that it matches exactly.

  In the above embodiment, the positions of the field-of-view areas IRa of the odd-numbered projection optical systems (PL1, PL3, PL5) and the field-of-view areas IRb of the even-numbered projection optical systems (PL2, PL4, PL6) in the exposure apparatus. The position of the cylindrical mask in the Z direction can be changed according to the diameter of the mounted cylindrical mask so that (XYZ directions) do not change. As described above, if the positions of the visual field regions IRa and IRb are not changed, there is an advantage that the number of change points and adjustment points on the apparatus side with respect to cylindrical masks having different diameters can be reduced. However, in that case, the drive system such as a motor that rotates the cylindrical mask and an actuator that finely moves in the XYZ directions is also moved in the Z direction as a whole, which may impair the stability of the drive system.

  Therefore, in order to obtain the advantage that the stability of the drive system can be maintained, the diameter is different without changing the Z position (or X position) of the rotation center (first axis AX1, shaft) of the cylindrical mask in the exposure apparatus. A cylindrical mask may be attached. In this way, in addition to the advantage that the stability of the drive system can be maintained, it is only necessary to replace a hollow cylindrical mask (the outer peripheral surface has a different radius) that is mounted on the outer side with respect to a rotating shaft having a constant diameter. A characteristic effect such as good is obtained. In order to cope with this, on the exposure apparatus side, the focus position of each projection optical system is adjusted, the focus position is adjusted with respect to the cylindrical mask of various alignment sensors (microscopes), the field areas IRa, IRb, and the detection field of the alignment sensor. Position adjustment in the XYZ directions, adjustment of the tilt and convergence of the principal ray of the illumination light beam EL1, or between the odd-numbered projection optical systems (PL1, PL3, PL5) and the even-numbered projection optical systems (PL2, PL4, PL6) It is desirable to have a configuration that can adjust the interval.

  Now, in this embodiment, as shown in FIG. 23, the mask M (and the mask holding drum 21) is taken out from the bearing device by the replacement mechanism 150, and a separately prepared mask Ma (with the mask holding drum 21a) is attached. Install in the bearing device. When the mask M is taken out and the mask Ma is attached, if the focus measurement device AFM or the foreign matter inspection device CD in FIG. 23 spatially interferes with a part of the mask or the exchange mechanism 150, these are temporarily retracted. Let me. Further, as shown in FIG. 23, the projection optical system PL and the illumination optical system IL are positioned in the −Z direction with respect to the bearing device that supports the first axis AX1, and the alignment microscopes GS1 and GS2 are positioned in the −X direction. Therefore, the direction in which the mask M and the mask Ma can be carried out and carried in is the + Z direction, the + X direction, or the ± Y direction (the direction of the first axis AX1) with respect to the bearing device.

  If the mask M is replaced with a mask Ma having a different diameter, the process proceeds to step S102, and after the replacement, the lower level control device 16 acquires information about the mask Ma mounted on the exposure apparatus U3d (post-exchange mask information). The post-replacement mask information includes various specification values attributable to the mask such as, for example, dimensions such as diameter, circumference, width, and thickness, tolerance, pattern type, roundness, eccentricity, or flatness of the mask surface P1. And correction values.

  For example, as shown in FIG. 26, these pieces of information are stored in the information storage unit 19 provided on the surface of the mask holding drum 21a. The information storage unit 19 is, for example, a barcode, a hologram, or an IC tag. In the present embodiment, the information storage unit 19 is provided on the surface of the mask holding drum 21a. However, the information storage unit 19 may be provided on the mask Ma together with a device pattern. In the present embodiment, the surface of the cylindrical mask includes both the surface of the mask Ma and the surface of the mask holding drum 21a. In FIG. 26, the information storage unit 19 is provided on the cylindrical outer peripheral surface of the mask holding drum 21a, but may be provided on an end surface portion in the axial direction of the mask holding drum 21a.

  The lower control device 16 acquires the post-replacement mask information read by the reading device 17 from the information storage unit 19. The reading device 17 can use a barcode reader when the information storage unit 19 is a barcode, and an IC tag reader when the information storage unit 19 is an IC tag. The information storage unit 19 may be a part in which information is written in advance on the mask Ma.

  The post-exchange mask information may be included in the exposure information related to the exposure conditions. The exposure information is information necessary when the exposure apparatus U3d performs exposure processing on the substrate P, such as information on the substrate P to be exposed, the scanning speed of the substrate P, and the power of the illumination light beam EL1. In the present embodiment, various adjustments and corrections are performed by adding the post-exchange mask information to the exposure information, and recipe conditions and parameters for operating the apparatus during exposure are set. The exposure information is stored in, for example, an exposure information storage table TBL shown in FIG. 27, and is stored in the storage unit of the lower control device 16 or the storage unit of the upper control device 5. The lower-level control device 16 reads the exposure information storage table TBL from the above-described storage unit, and acquires post-exchange mask information. Note that the post-replacement mask information may be input via an input device (such as a keyboard or a mouse) to the lower control device 16 or the upper control device 5. In this case, the lower-level control device 16 acquires the post-replacement mask information from the input device described above. When the lower order control device 16 acquires the post-replacement mask information, the process proceeds to step S103.

  In step S103, the lower-level control device 16 collects or calculates data relating to a portion that requires adjustment of the exposure apparatus U3d and conditions necessary for adjustment, according to the diameter of the mask Ma after replacement. The parts that need to be adjusted include, for example, the position of the mask M in the Z-axis direction, the illumination optical system IL, the projection optical system PL, the rotation speed of the mask M, the exposure width (the width in the circumferential direction of the illumination area IR), and the encoder head. These are the positions or postures of EH1 and EH2, the positions or postures of alignment microscopes GS1 and GS2, and the like. In the present embodiment, since the rotation center axis (first axis AX1a) of the mask Ma after replacement shifts in the Z-axis direction from the rotation center position of the mask M before replacement, a drive source ( For example, it is necessary to adjust (position shift) the mounting position of the drive source in the exposure apparatus main body so that the output shaft of the motor can be connected to the shaft of the mask Ma. For this reason, the exposure apparatus U3d mounts one of a plurality of masks having different diameters in a replaceable manner, and rotates the mask Ma 11 that rotates around the first axis AX1 as a predetermined axis line. The adjusting unit adjusts at least the distance between the first axis AX1 and the substrate support mechanism in accordance with the diameter of the substrate. The adjustment unit sets the distance between the outer peripheral surface of the mask mounted on the mask holding mechanism 11 and the substrate P supported by the substrate support mechanism within a predetermined allowable range.

  As described above, in the present embodiment, the position of the illumination visual field IR in the Z-axis direction is not changed before and after the mask Ma having a different diameter is replaced. For this reason, for example, in step S101, the lower-level control device 16 only replaces the mask Ma with a different diameter. When the post-replacement mask information is acquired in step S102, the illumination field of view of the mask Ma in the Z-axis direction is obtained based on this. The IR position is controlled to the same position as before replacement. Prior to the replacement with the mask Ma, the lower-level control device 16 obtains the information of the mask Ma from, for example, the exposure information storage table TBL, and based on this, at the timing of replacement with the mask Ma, the Z-axis direction of the mask Ma The position of the illumination visual field IR at may be controlled to the same position as before the replacement. Next, an example of adjustment in step S103 will be described.

  FIG. 28 is a diagram schematically showing the behavior of the illumination light beam and the projection light beam between masks having different diameters based on FIG. As described above, if the position of the illumination visual field IR in the Z-axis direction does not change before and after the replacement of the mask M, as shown in FIG. The position of the single axis AX1 in the Z-axis direction changes. Specifically, the rotation center axis AX1a of the mask Ma having a small diameter is closer to the second axis AX2 that is the rotation center axis of the substrate support drum 25 than the first axis AX1 of the mask M having a large diameter.

  Even when the mask Ma after replacement has a smaller diameter than the mask M before replacement, as shown in FIG. 28, the XYZ coordinates of the intersection point Q1 which is the center in the circumferential direction of the illumination region IR on the mask Ma (mask surface P1a) It is assumed that the absolute position (unique position in the exposure apparatus) is not changed. For this reason, as shown in FIG. 28, the illumination condition of the illumination light beam EL1 set for the mask M before replacement, that is, each principal ray of the illumination light beam EL1 in the XZ plane is set to 1 of radius (curvature radius) Rm. When the illumination beam EL1 is irradiated onto the mask Ma having a small diameter while maintaining the condition of tilting toward the point Q2 of / 2, the principal rays of the projection beam EL2a reflected by the illumination region IR on the mask Ma It shifts from the parallel state and diverges in the XZ plane, and the traveling direction is also shifted.

  For this reason, it is necessary to adjust the illumination light beam EL1 from the illumination optical system IL to the illumination light beam EL1 suitable for the mask Ma. Therefore, in step S103, the cylindrical lens 54 (see FIG. 4) of the illumination optical system IL is changed to one having a different power to change the magnification telecentric state so that each principal ray of the illumination light beam EL1 is masked in the XZ plane. It adjusts so that it may converge toward the position of ½ of the radius Rma. Furthermore, the axial telecentric state at the intersection point Q1 that is the center of the visual field area IRa (illumination area IR) using a declination prism (not shown) is the extension of the principal ray of the illumination light beam EL1 that passes through the intersection point Q1 is the central axis of the mask Ma. Adjust to pass through AX1a.

  Further, the angle of the reflected light beam from the mask Ma, that is, the angle of the projected light beam EL2a is adjusted. In this case, since the axial angle between the illumination light beam EL1 and the projection light beam EL2a (the angle of the principal ray in the XZ plane) varies depending on the diameter of the mask Ma (the center position of the principal ray), the polarization beam is a common optical path. It is possible to adjust the angle of the projection light beam EL2a by arranging a declination prism (a prism having a wedge-shaped incident surface and a non-parallel incident surface) between the splitter PBS and the mask Ma.

  When the angle of only the projection light beam EL2a is adjusted, the polarizing member of the projection optical system PL (for example, the first reflecting surface P3 of the first deflecting member 70 or the fourth reflecting surface P6 of the second deflecting member 80). The angle may be adjusted. Thus, when the mask Ma having a different diameter is exchanged (in this example, the diameter of the mask Ma after the exchange is smaller than that before the exchange), each principal ray of the projection light beam EL2a reflected by the mask Ma is changed. In the XZ plane, the light beams can be parallel to each other. That is, the illumination optical system IL also applies the illumination region IR on the mask Ma so that the projection light beam EL2a reflected by the illumination region IR of the mask Ma is in a telecentric state even for the mask Ma having a different diameter after replacement. The illumination conditions of the illumination light beam EL1 applied to the light are adjusted.

  When performing the above-described adjustment, for example, the illumination optical module ILM of the illumination optical system IL is provided with a lens exchange mechanism or the like that installs one of a plurality of cylindrical lenses 54 having different powers in the optical path so as to be exchangeable. Is done. The lens replacement mechanism may be controlled by a command from the lower control device 16 to switch to the most suitable cylindrical lens 54. At this time, the low order control device 16 switches the cylindrical lens 54 based on the information on the diameter of the mask Ma after replacement. Further, an actuator for adjusting the angle (and the position in the XZ plane) of the polarization prism or the polarizing member in the projection optical module PLM between the polarizing beam splitter PBS and the mask Ma described above is provided by the lower control device 16. The optical characteristics of the projection light beam EL2 reflected by the mask Ma may be adjusted. Also in this case, the lower-level control device 16 adjusts the angle of the declination prism or the polarization member based on the information on the diameter of the mask Ma after replacement. The replacement of the cylindrical lens 54 and the adjustment of the declination prism etc. may be performed by the operator of the exposure apparatus U3d.

  FIG. 29 is a diagram showing an arrangement change of an encoder head or the like when the mask is replaced with a mask having a different diameter. In the adjustment in step S103, the encoder heads EH1 and EH2, the alignment microscopes GS1 and GS2, the focus measuring device AFM on the mask M side, and the foreign matter inspection device CD that detects foreign matter are further adjusted as necessary. As shown in FIG. 29, for example, when the mask M and the mask holding drum 21 having a radius (curvature radius) Rm are replaced with the mask Ma and the mask holding drum 21a having a small radius Rma, they are arranged around the mask M. The encoder heads EH1 and EH2, the alignment microscopes GS1 and GS2, the focus measurement device AFM, and the foreign matter inspection device CD that have been used need to be repositioned around the mask Ma having a reduced diameter and the posture thereof must be adjusted. . By doing so, the position of the alignment mark on the mask Ma, the rotation angle of the mask Ma, and the like can be correctly measured.

  In the example shown in FIG. 29, the alignment microscopes GS1, GS2, the focus measuring device AFM, and the foreign matter inspection device CD are rearranged around the mask Ma having a reduced diameter. In addition, the encoder heads EH1 and EH2 in this example have positions of the field area IRa of the first projection optical system (odd number) and the field area IRb of the second projection optical system (even number) in the XZ plane, respectively. It is arranged near the position. Therefore, it is not necessary to largely change the positions of the encoder heads EH1 and EH2 within the XZ plane after the mask replacement.

  However, by replacing with the mask Ma, the scale on the outer peripheral surface of the scale disk SD read by the encoder heads EH1, EH2, or the scale formed on the outer peripheral surface of the mask holding drum 21a together with the mask Ma, and the encoder heads EH1, EH2 The relative reading angle will change. For this reason, the postures of the encoder heads EH1 and EH2 are adjusted so as to accurately face the scale surface. Specifically, as indicated by arrows N1 and N2 shown in FIG. 29, the heads EH1 and EH2 are rotated (tilted) at the positions according to the diameter of the scale surface. In this way, information on the rotation angle of the mask Ma can be obtained with high accuracy.

  When exchanging the mask Ma, the scale disk SD may be exchanged together with the mask Ma and the mask holding drum 21a to adjust the postures (tilts) of the encoder heads EH1 and EH2, and the mounting position and the like may be adjusted. The scale may be provided on the surface of the mask Ma or the outer peripheral surface of the mask holding drum 21a. If the scale pitch in the circumferential direction of the scale read by the encoder heads EH1 and EH2 is different from that before the replacement when the mask Ma is replaced with the mask Ma, the lower level control device 16 determines the scale pitch and encoder head after the replacement. The correspondence relationship with the detected values of EH1 and EH2 is corrected. Specifically, the conversion coefficient of how much one count by the digital counter of the encoder system becomes the rotation angle of the mask Ma after replacement or the movement distance in the circumferential direction of the mask surface P1a is corrected.

  The focus measurement device AFM and the foreign matter inspection device CD are, as indicated by imaginary lines in FIG. 29, directly below the rotation center axis (first axis AX1 or first axis AX1a) of the mask M or the mask Ma in the Z-axis direction, and It is arranged between the illumination visual field IRa of the first projection optical system and the illumination visual field IRb of the second projection optical system, and the mask surface P1 or the mask surface P1a of the mask M or the mask Ma is detected from below. Good. In this way, the change in the distance from the focus measuring device AFM and the foreign matter inspection device CD to the surface of the mask M or the surface of the mask Ma can be reduced before and after the replacement of the mask Ma. For this reason, there is a possibility that it can be dealt with by correcting the optical system or processing software of the focus measuring apparatus AFM and the foreign substance inspection apparatus CD. In this case, it is not necessary to change the attachment positions of the focus measurement device AFM and the foreign matter inspection device CD.

  By exchanging with the mask Ma, the radius of curvature decreases, so that the defocus within the exposure width of the projection area PA (scanning direction of the substrate P or circumferential direction of the mask Ma) may increase. In such a case, it is necessary to adjust the exposure width (including an oblique portion), the illuminance of the illumination optical system IL, or the scanning speed (the rotation speed of the mask Ma and the feed speed of the substrate P). These can be adjusted by adjusting the projection field stop 63, or by adjusting the output of the light source of the light source device 13 and the rotation of the mask holding drum 21a and the substrate support drum 25 by the lower control device 16. In this case, it is preferable to change all of the exposure width, illuminance, and scanning speed.

  Furthermore, it is necessary to adjust the position of the projection area PA of the projection optical system PL, the relative positional relationship of the projection optical module PLM, the magnification in the rotation direction of the mask Ma due to the change in the circumference of the mask Ma, and the like. For example, the subordinate control device 16 controls the projection region PA or mask Ma of the projection optical system PL by controlling the image shift optical member 65 or the magnification correction optical member 66 included in the projection optical module PLM of the projection optical system PL. The magnification in the rotation direction can be adjusted.

  In step S103, mechanical adjustment such as adjustment of the position of the mask Ma in the Z-axis direction, adjustment of optical components included in the illumination optical system IL, adjustment of optical components included in the projection optical system PL, adjustment of encoder heads EH1 and EH2, and the like. Adjustments are made. Some of these can be adjusted automatically (or semi-automatically) by the lower level control device 16 and an adjustment driving mechanism, and others can be adjusted manually by the operator of the exposure apparatus U3d. In addition, in step S103, the lower-level control device 16 changes control data (various parameters) and the like for controlling the exposure apparatus U3d based on the post-replacement mask information or exposure information.

  In step S103, the exposure apparatus U3d has been adjusted based on the post-replacement mask information acquired in step S102. However, after replacement of the shape, dimensions, mounting position, and the like of the mask Ma measured by the measurement apparatus 18 shown in FIG. The exposure apparatus U3d may be adjusted based on the mask information. In this case, for example, the lower control device 16 performs various adjustments based on the mask Ma measured by the measuring device 18 after being replaced with the mask Ma. In addition, for parts and the like that must be adjusted and replaced by the operator, the lower level control device 16 displays the parts and the like that need to be adjusted, for example, on a monitor and notifies the operator. By adjusting the exposure apparatus U3d based on the measured value of the mask Ma after replacement, for example, post-replacement mask information that takes into account changes in the environment such as temperature or humidity can be obtained. Thus, the exposure apparatus U3d can be adjusted. When the adjustment by exchanging with the mask Ma is completed in step S103, the process proceeds to step S104.

  As described above, when the mask is replaced with a mask having a different diameter, the characteristics of the related optical system, mechanism system, and detection system in the exposure apparatus may fluctuate. In this embodiment, a calibration apparatus as shown in FIG. 30 is provided so that the characteristics and performance of the exposure apparatus after mask replacement can be confirmed. FIG. 30 is a diagram of a calibration apparatus. FIG. 31 is a diagram for explaining calibration. In step S103, the exposure apparatus U3d is in a state suitable for the mask Ma after replacement. However, by performing calibration in step S104, the state of the exposure apparatus U3d is further changed to a state suitable for the mask Ma after replacement. To do. For calibration, a calibration device 110 shown in FIG. 30 is used. Calibration in this embodiment is executed by the lower-level control device 16. The lower level control device 16 uses the calibration device 110 to adjust the first mark ALMM as an adjustment mark provided on the surface of the mask Ma held on the mask holding drum 21a as shown in FIG. A second mark ALMR as an adjustment mark provided on the surface (the portion of the substrate support drum 25 that supports the substrate P) is detected. Then, the lower control device 16 transfers the illumination optical system IL, the projection optical system PL, the rotation speed of the mask Ma, and the transport of the substrate P so that the relative positions of the first mark ALMM and the second mark ALMR have a predetermined positional relationship. Adjust speed or magnification. Therefore, it is preferable to perform the calibration step S104 before winding the substrate P around the substrate support drum 25. However, as long as the substrate P has high transparency and various patterns are not formed on the substrate P. The calibration may be performed while the substrate P is wound around the substrate support drum 25.

  As illustrated in FIG. 30, the calibration device 110 includes an image sensor (for example, CCD, CMOS) 111, a lens group 112, a prism mirror 113, and a beam splitter 114. In the case of the multi-lens method, the calibration device 110 is provided corresponding to each of the illumination optical systems IL1 to IL6. When executing calibration, the lower-level control device 16 arranges the beam splitter 114 of the calibration device 110 in the optical path of the illumination light beam EL1 between the illumination optical system IL and the polarization beam splitter PBS. When calibration is not executed, the beam splitter 114 is retracted from the optical path of the illumination light beam EL1.

  Since the sensitivity of the image sensor 111 is sufficiently high, it is not necessary to consider the loss of light power. For this reason, the beam splitter 114 may be, for example, a half prism. Moreover, the calibration apparatus 110 can be reduced in size by putting the beam splitter 114 into and out of the optical path of the illumination light beam EL1 between the illumination optical system IL and the polarization beam splitter PBS.

  As shown in FIG. 30, the light beam from the calibration light source 115 is incident from the surface opposite to the surface on which the illumination light beam EL1 of the polarization beam splitter PBS for separating the illumination light beam EL1 and the projection light beam EL2 is incident. There is also a way to make it. Further, a calibration light source 115 (light emitting unit) is disposed on the back surface side of the second mark ALMR of the substrate support drum 25, and the calibration light beam is irradiated from the back surface side of the second mark ALMR. The light transmitted through the mark ALMR may be projected onto the mask surface P1a of the replaced mask Ma via the projection optical system PL and the polarization beam splitter PBS. In this case, the imaging device 111 of the calibration device 110 captures both the image of the second mark ALMR of the substrate support drum 25 that is back-projected on the replaced mask Ma and the first mark ALMM on the mask Ma. be able to.

  By arranging the beam splitter 114 in the optical path of the illumination light beam EL1 between the illumination optical system IL and the polarization beam splitter PBS, the image of the first mark ALMM from the mask Ma and the second mark ALMR from the substrate support drum 25 are provided. Are guided to the prism mirror 113 of the calibration device 110 via the beam splitter 114. The light of each mark image reflected by the prism mirror 113 passes through the lens group 112, and after that, the imaging time (sampling time) for one frame is as short as about 0.1 to 1 millisecond and has a high shutter speed. Incident on the element 111. The lower-level control device 16 analyzes the image signal corresponding to the image of the first mark ALMM and the image of the second mark ALMR output from the image sensor 111, the analysis result, and each encoder at the time of imaging (during sampling) Based on the measurement values of the heads EH1, EH2, EN2, and EN3, the relative positional relationship between the first mark ALMM and the second mark ALMR is obtained, and the illumination optical system IL, The projection optical system PL, the rotation speed of the mask Ma, the transport speed or magnification of the substrate P, etc. are adjusted.

  As shown in FIG. 31, the first mark ALMM is positioned at positions where each illumination region IR (IR1 to IR6) corresponding to each illumination optical system IL (IL1 to IL6) overlaps with the center plane CL interposed therebetween (each It is arrange | positioned at the triangular part of the both ends in the Y direction of the illumination area | region IR. The second mark ALMR is located at a position where each projection area PA (PA1 to PA6) corresponding to each projection optical system PL (PL1 to PL6) overlaps with the center plane CL interposed therebetween (in the Y direction of each projection area PA). It is arranged in the triangular part at both ends. In the calibration, the calibration apparatus 110 provided for each projection optical module PLM sequentially sets the first mark ALMM in the order of the first row (odd number) and the second row (even number) across the center plane CL. The image and the image of the second mark ALMR are received.

  As described above, in step S103, when the adjustment (mainly mechanical adjustment) by exchanging the mask Ma is completed, the lower-level control device 16 includes the mask Ma and the substrate support drum 25 that conveys the substrate P after the replacement. The exposure apparatus U3d is adjusted so that the positional deviation between the two becomes less than the allowable range. As described above, the lower-level control device 16 adjusts the exposure device U3d using at least the image of the first mark ALMM and the image of the second mark ALMR. In this way, the error that cannot be corrected by mechanical adjustment is further corrected based on the actual mark image acquired from the mask Ma and the substrate support drum 25 after replacement. As a result, the exposure apparatus U3d can perform exposure using the replaced mask Ma with appropriate and good accuracy.

  In the above example, the exposure apparatus U3d is mainly mechanically adjusted after replacing the mask, but the adjustment after replacing the mask is not limited to this. For example, when the difference between the diameters of the cylindrical masks that can be mounted on the exposure apparatus U3d is small, the effective diameters of the illumination optical system IL and the projection optical system PL are set according to the cylindrical mask having the smallest diameter among the cylindrical masks. By determining the size of the polarization beam splitter PBS, it is possible to eliminate the adjustment of the angle characteristics and the like of the illumination light beam EL1. In this way, the adjustment work of the exposure apparatus U3d can be simplified. In the present embodiment, the masks that can be used by the exposure apparatus U3d are classified into a plurality of groups for each mask diameter, and the mask diameter changes beyond the group when the mask diameter is changed within the group. In some cases, the adjustment target or parts of the exposure apparatus U3d may be changed.

  FIG. 32 is a side view showing an example in which a mask is rotatably supported using an air bearing. FIG. 33 is a perspective view showing an example in which a mask is rotatably supported using an air bearing. The mask holding drum 21 that holds the mask M may be rotatably supported by air bearings 160 at both ends. The air bearing 160 is formed by annularly arranging a plurality of support units 161 around the outer periphery of the mask holding drum 21. And the air bearing 160 supports the mask holding drum 21 rotatably by ejecting air (air) from the inner peripheral surface of each support unit 161 toward the outer peripheral surface of the mask holding drum 21. As described above, the air bearing 160 functions as a mask holding mechanism that allows one of a plurality of masks M having different diameters to be exchangeably mounted and rotates around a predetermined axis (first axis AX1).

  In step S103 described above, the support unit 161 of the air bearing 160 is replaced according to the diameter of the replaced mask Ma. Further, when the difference in the diameter (2 × Rm) of the mask M is small before and after the replacement, the position of each support unit 161 in the radial direction may be adjusted to correspond to the mask M after the replacement. Thus, when the exposure apparatus U3d supports the mask M so as to be rotatable via the air bearing 160, the air bearing 160 functions as a bearing apparatus on the main body side of the exposure apparatus U3d that supports the masks having different diameters in a replaceable manner. To do.

<Sixth Embodiment>
FIG. 34 is a view showing the overall arrangement of an exposure apparatus according to the sixth embodiment. The exposure apparatus U3e will be described with reference to FIG. In order to avoid overlapping description, only different parts from the above-described embodiment will be described, and the same components as those in the embodiment will be described with the same reference numerals as those in the embodiment. In addition, each structure of the exposure apparatus U3d of 5th Embodiment is applicable to this embodiment.

  The exposure apparatus U3 according to the embodiment is configured to use a reflective mask in which light reflected from the mask becomes a projected light beam. However, the exposure apparatus U3e according to this embodiment has a transmissive type in which light transmitted through the mask becomes a projected light beam. A mask (transmission type cylindrical mask) is used. In the exposure apparatus U3e, the mask holding mechanism 11e includes a mask holding drum 21e that holds the mask MA, a guide roller 93 that supports the mask holding drum 21e, a driving roller 94 that drives the mask holding drum 21e, and a driving unit 96. . Although not shown, the exposure apparatus U3e includes an exchange mechanism 150 for exchanging the mask MA as shown in FIG.

  The mask holding mechanism 11e mounts one of a plurality of masks MA having different diameters so as to be exchangeable, and rotates the mask MA around the predetermined axis (first axis AX1). The exposure apparatus U3e mounts one of a plurality of masks MA having different diameters so as to be replaceable, and rotates the mask MA to be rotated around the first axis AX1 as a predetermined axis. Accordingly, an adjustment unit that adjusts at least the distance between the first axis AX1 and the substrate support mechanism is provided. The adjustment unit sets the interval between the outer peripheral surface of the mask MA mounted on the mask holding mechanism 11e and the substrate P supported by the substrate support mechanism within a predetermined allowable range.

  The mask holding drum 21e is made of, for example, glass or quartz and has a cylindrical shape having a certain thickness, and its outer peripheral surface (cylindrical surface) forms the mask surface of the mask MA. That is, in the present embodiment, the illumination area on the mask MA is curved in a cylindrical surface shape having a constant radius of curvature Rm from the center line. Of the mask holding drum 21e, a portion that overlaps the pattern of the mask MA as viewed from the radial direction of the mask holding drum 21e, for example, a central portion other than both ends in the Y-axis direction of the mask holding drum 21e is transparent to the illumination light flux. Have sex. An illumination area on the mask MA is disposed on the mask surface.

  The mask MA is produced as a transmission type planar sheet mask in which a pattern is formed with a light-shielding layer of chromium or the like on one surface of a strip-shaped ultrathin glass plate having a good flatness (for example, a thickness of 100 μm to 500 μm). It is used in a state in which it is curved along the outer peripheral surface of the mask holding drum 21e and wound (attached) around this outer peripheral surface. The mask MA has a pattern non-formation region where no pattern is formed, and is attached to the mask holding drum 21e in the pattern non-formation region. The mask MA can be removed from the mask holding drum 21e. As in the mask M of the embodiment, instead of wrapping around the mask holding drum 21e made of a transparent cylindrical base material, the mask MA has a mask pattern made of a light shielding layer such as chrome directly on the outer peripheral surface of the mask holding drum 21e made of the transparent cylindrical base material. Drawing may be formed and integrated. Also in this case, the mask holding drum 21e functions as a mask support member.

  The guide roller 93 and the driving roller 94 extend in the Y-axis direction parallel to the central axis of the mask holding drum 21e. The guide roller 93 and the driving roller 94 are provided to be rotatable around an axis parallel to the rotation center axis of the mask MA and the mask holding drum 21e. Each of the guide roller 93 and the drive roller 94 has an outer diameter at the end portion in the axial direction larger than the outer shape of the other portion, and the end portion circumscribes the mask holding drum 21e. Thus, the guide roller 93 and the drive roller 94 are provided so as not to contact the mask MA held on the mask holding drum 21e. The drive roller 94 is connected to the drive unit 96. The drive roller 94 transmits the torque supplied from the drive unit 96 to the mask holding drum 21e, thereby rotating the mask holding drum 21e around its rotation center axis.

  Although the mask holding mechanism 11e includes one guide roller 93, the number is not limited and may be two or more. Similarly, the mask holding mechanism 11e includes one drive roller 94, but the number is not limited and may be two or more. At least one of the guide roller 93 and the driving roller 94 is disposed inside the mask holding drum 21e, and may be inscribed in the mask holding drum 21e. Further, portions of the mask holding drum 21e that do not overlap with the mask MA pattern when viewed from the radial direction of the mask holding drum 21e (both ends in the Y-axis direction) are translucent to the illumination light beam. Or may not have translucency. Further, one or both of the guide roller 93 and the drive roller 94 may have a truncated cone shape, for example, and the center axis (rotation axis) thereof may be non-parallel to the center axis.

  The exposure apparatus U3e has a field area (illumination area) IRa of the first projection optical system and a field area (illumination area) of the second projection optical system shown in FIG. IRb is preferably arranged respectively. In this way, even if the diameter of the mask MA changes, the positions of the visual field regions IRa and IRb in the Z-axis direction can be kept constant. As a result, when the mask MA having a different diameter is exchanged, the positions of the visual field regions IRa and IRb can be easily adjusted in the Z-axis direction.

  The illumination device 13e of the present embodiment includes a light source (not shown) and an illumination optical system (illumination system) ILe. The illumination optical system ILe includes a plurality of (for example, six) illumination optical systems ILe1 to ILe6 arranged in the Y-axis direction corresponding to each of the plurality of projection optical systems PL1 to PL6. Various light sources can be used as the light source in the same manner as the light source device 13 of the embodiment. The illumination light emitted from the light source has a uniform illuminance distribution and is distributed to a plurality of illumination optical systems ILe1 to ILe6 through a light guide member such as an optical fiber.

  Each of the plurality of illumination optical systems ILe1 to ILe6 includes a plurality of optical members such as lenses. Each of the plurality of illumination optical systems ILe1 to ILe6 includes, for example, an integrator optical system, a rod lens, or a fly-eye lens, and illuminates the illumination area of the mask MA with an illumination light beam having a uniform illuminance distribution. In the present embodiment, the plurality of illumination optical systems ILe1 to ILe6 are arranged inside the mask holding drum 21e. Each of the plurality of illumination optical systems ILe1 to ILe6 illuminates each illumination area on the mask MA held on the outer peripheral surface of the mask holding drum 21e through the mask holding drum 21e from the inside of the mask holding drum 21e.

  The illumination device 13e guides the light emitted from the light source by the illumination optical systems ILe1 to ILe6, and irradiates the mask MA with the guided illumination light beam from the inside of the mask holding drum 21e. The illuminating device 13e illuminates a part (illumination area) of the mask MA held on the mask holding drum 21e with uniform brightness by the illumination light flux. The light source may be arranged inside the mask holding drum 21e or may be arranged outside the mask holding drum 21e. The light source may be an apparatus (external apparatus) different from the exposure apparatus U3e.

  The illumination optical systems ILe1 to ILe6 irradiate an illumination light beam extending in a slit shape in the direction of the first axis AX1 as a predetermined axis from the inside of the mask MA toward the outer peripheral surface thereof. In addition, the exposure apparatus U3e includes an adjustment unit that adjusts the width of the illumination light beam in the rotation direction of the mask MA according to the diameter of the mask MA to be mounted.

  The substrate support mechanism 12e of the exposure apparatus U3e includes a substrate stage 102 that holds the planar substrate P, and a moving device (not shown) that scans and moves the substrate stage 102 along the X direction within a plane orthogonal to the center plane CL. With. Since the surface of the substrate P on the support surface P2 side shown in FIG. 34 is a plane substantially parallel to the XY plane, the projection light beam reflected from the mask MA, passes through the projection optical system PL, and is projected onto the substrate P. The chief ray is perpendicular to the XY plane. In the calibration in step S104 described above, the second mark ALMR shown in FIG. 31 is provided on the surface of the support surface P2 of the substrate stage.

  The exposure apparatus U3e uses a transmissive mask as the mask MA, but in this case as well, the exposure apparatus U3e can be replaced with a mask MA having a different diameter as in the exposure apparatus U3. Then, when the mask MA is replaced with a different diameter, the exposure apparatus U3e, after the replacement, after at least one of the illumination optical systems ILe1 to ILe6 and the projection optical systems PL1 to PL6 has been adjusted in the same manner as the exposure apparatus U3. The relative positional relationship between the mask MA and the substrate stage 102 that transports the substrate P is adjusted (set) so as to be within a predetermined allowable range. In this way, errors that cannot be corrected by mechanical adjustment are corrected more precisely based on actual mark images and the like acquired from the mask MA and the substrate stage 102. As a result, the exposure apparatus U3e can maintain exposure with appropriate and good accuracy and can perform exposure with the replaced mask.

  Instead of the substrate support mechanism 12 included in the exposure apparatus U3 of the embodiment, a substrate support mechanism 12e included in the exposure apparatus U3e of the present embodiment may be applied to the exposure apparatus U3. Further, the substrate support drum 25 is rotatably supported by the exposure apparatus U3 of the embodiment using the guide roller 93 and the driving roller 94, and the positions of the guide roller 93 and the driving roller 94 are shown in FIG. The visual field area (illumination area) IRa of the first projection optical system and the visual field area (illumination area) IRb of the second projection optical system may be arranged, respectively. In this way, when the mask MA having a different diameter is exchanged, the positions of the visual field regions IRa and IRb in the Z-axis direction can be easily adjusted.

<Seventh embodiment>
FIG. 35 is a view showing the overall arrangement of an exposure apparatus according to the seventh embodiment. The exposure apparatus U3f will be described with reference to FIG. In order to avoid overlapping description, only different parts from the above-described embodiment will be described, and the same components as those in the embodiment will be described with the same reference numerals as those in the embodiment. In addition, each structure of the exposure apparatus U3d of 5th Embodiment and 6th Embodiment exposure apparatus U3e is applicable to this embodiment.

  The exposure apparatus U3f is a substrate processing apparatus that performs so-called proximity exposure on the substrate P. In the exposure apparatus U3f, the gap (proximity gap) between the mask MA and the substrate support drum 25f is set to several μm to several tens μm, and the illumination optical system ILc directly irradiates the substrate P with the illumination light beam EL. , Non-contact exposure. The mask MA is provided on the surface of the mask holding drum 21f. The exposure apparatus U3f of the present embodiment is configured to use a transmissive mask in which light transmitted through the mask MA becomes a projection light beam EL. In the exposure apparatus U3f, the mask holding drum 21f is made of, for example, glass or quartz and has a cylindrical shape having a certain thickness, and its outer peripheral surface (cylindrical surface) forms the mask surface of the mask MA. Although not shown, the exposure apparatus U3f includes an exchange mechanism 150 for exchanging the mask MA as shown in FIG.

  In the present embodiment, the substrate support drum 25f is rotated by torque supplied from the second drive unit 26f including an actuator such as an electric motor. A pair of drive rollers MGG and MGG connected by, for example, magnetic gears drive the mask holding drum 21f so as to be opposite to the rotation direction of the second drive unit 26f. The second drive unit 26f rotates the substrate support drum 25f and rotates the drive rollers MGG and MGG and the mask holding drum 21f to move the mask holding drum 21f and the substrate support drum 25f synchronously (synchronous rotation). Since a part of the substrate P is wound around the substrate support drum 25f via the pair of air turn bars ATB1f and ATB2f and the pair of guide rollers 27f and 28f, when the substrate support drum 25f rotates, the substrate P P is conveyed in synchronization with the mask holding drum 21f. As described above, the pair of drive rollers MGG and MGG function as a mask holding mechanism that allows one of a plurality of masks having different diameters to be exchanged and is rotated around a predetermined axis (first axis AX1). To do.

  The illumination optical system ILc is in a slit shape in the Y direction at a position where the outer peripheral surface of the mask MA and the substrate P supported by the substrate support drum 25f are closest to each other at the position of the pair of drive rollers MGG and MGG. The extended illumination light beam is projected from the inside of the mask MA toward the substrate P. In such a proximity exposure method, the exposure position of the mask pattern on the substrate P (corresponding to the projection area PA) is one in the circumferential direction of the mask MA, so when replacing with a cylindrical mask having a different diameter, It is only necessary to adjust the position of the cylindrical mask in the Z-axis direction or the position of the substrate support drum 25f that supports the substrate P in the Z-axis direction so as to keep the proximity gap at a predetermined value.

  As described above, the exposure apparatus U3f uses a transmission mask as the mask MA and performs proximity exposure on the substrate P. In this case as well, the exposure apparatus U3 can be replaced with a mask MA having a different diameter. it can. When the mask MA having a different diameter is exchanged, the exposure apparatus U3f performs the same calibration as the exposure apparatus U3, so that the relative relationship between the exchanged mask MA and the substrate support drum 25f that transports the substrate P is obtained. It is possible to adjust so that a general positional deviation (including a proximity gap) is within an allowable range. In this way, the error that cannot be corrected by the mechanical adjustment is corrected more precisely based on the actual mark image acquired from the mask MA and the substrate support drum 25f, and as a result, the exposure apparatus U3f is corrected. Makes it possible to perform exposure with appropriate and good accuracy.

  Note that the illumination optical system ILc of the exposure apparatus U3f as shown in FIG. 35 uses an illumination beam that is long in the Y direction and narrow in the X direction (rotation direction of the mask MA) as a mask for the mask MA with a predetermined numerical aperture (NA). Since only the surface is irradiated, it is not necessary to substantially adjust the alignment characteristics (tilt of principal ray, etc.) of the illumination light beam from the illumination optical system ILc even if the diameter of the mounted cylindrical mask is different. However, a variable illumination field in the illumination optical system ILc so that the width in the X direction (rotation direction of the mask MA) of the illumination light beam irradiated on the mask surface can be changed according to the diameter (radius) of the mask MA. A diaphragm (variable blind) may be provided, or a refractive optical system (for example, a cylindrical zoom lens) that reduces or expands only the width of the illumination light beam in the X direction (rotation direction of the mask MA) may be provided.

  In addition, in the exposure apparatus U3f in FIG. 35, the substrate P is supported in a cylindrical surface shape by the substrate support drum 25f, but may be supported in a planar shape as in the exposure apparatus U3e in FIG. When the substrate P is supported in a planar shape, the width adjustment range in the X direction (rotation direction of the mask MA) of the illumination light beam corresponding to the difference in the diameter of the mask MA is wider than in the case where the substrate P is supported in a cylindrical shape. it can. By doing so, the width of the illumination light beam in the X direction (rotation direction of the mask MA) can be optimally adjusted within the allowable range of the proximity gap corresponding to the diameter of the mask MA, and transferred onto the substrate P. Maintenance of pattern quality (fidelity, etc.) and productivity can be optimized. In that case, a variable blind, a cylindrical zoom lens, or the like is included in the adjustment unit that adjusts the width of the illumination light beam in accordance with the diameter of the transmissive mask MA.

  In each of the above embodiments, the diameter of the cylindrical mask that can be mounted on the exposure apparatus has a certain range. For example, in an exposure apparatus equipped with a projection optical system that projects a fine pattern with a line width of about 2 μm to 3 μm, the depth of focus DOF of the projection optical system is as narrow as about several tens of μm, and in the projection optical system Generally, the focus adjustment range is narrow. For such an exposure apparatus, it is difficult to mount a cylindrical mask having a diameter that is changed in millimeters from a diameter defined as a standard. However, if the exposure apparatus side has a large adjustment range for each part and each mechanism so as to respond to the change in the diameter of the cylindrical mask from the beginning, the diameter of the cylindrical mask that can be mounted is determined based on the adjustment range. The range is determined. Further, in the proximity type exposure apparatus as shown in FIG. 35, the gap between a part of the outer peripheral surface of the mask MA and the substrate P only needs to be within a predetermined range, and the support mechanism for the cylindrical mask can be used. If so, it is possible to attach even cylindrical masks having diameters of 0.5 times, 1.5 times, 2 times,.

  FIG. 36 is a perspective view showing an example of a partial structure of the support mechanism in the exposure apparatus for the reflective cylindrical mask M. FIG. FIG. 36 shows only a mechanism for supporting the shaft 21S protruding to one side in the direction (Y direction) in which the rotation axis AX1 of the cylindrical mask M (mask holding drum 21) extends, but a similar mechanism is provided on the opposite side. It is done. In the case of FIG. 36, the scale disk SD is provided integrally with the cylindrical mask M. However, the scale that can be read by the encoder head at the same time as the device mask pattern is formed on both ends of the outer peripheral surface of the cylindrical mask M in the Y direction. (Lattice) may be engraved.

  At the tip of the shaft 21S, a cylindrical body 21K that is always precisely processed with a constant diameter is formed even if the mask M (mask holding drum 21) has a different diameter. The cylindrical body 21K is supported by a Z movable body 204 that is movable in the vertical direction (Z direction) at a portion in which a part of the frame (body) 200 of the exposure apparatus main body is cut out in a U shape. Guide rail portions 201A and 201B that extend linearly in the Z direction are formed at the end of the U-shaped cutout portion of the frame 200 extending in the Z direction so as to face each other at a predetermined interval in the X direction. .

  The Z movable body 204 includes a semicircular pad portion 204P for supporting the lower half of the cylindrical body 21K with an air bearing, and a slider portion 204A that engages with the guide rail portions 201A and 201B of the frame 200. 204B is formed. The slider portions 204A and 204B are supported so as to move smoothly in the Z direction by mechanically contacting bearings or air bearings with respect to the guide rail portions 201A and 201B.

  The frame 200 is provided with a ball screw 203 that is rotatably supported around an axis parallel to the Z axis, and a drive source (motor, reduction gear, etc.) 202 that rotates the ball screw 203. A nut portion that engages with the ball screw 203 is provided in a cam member 206 provided on the lower side of the Z movable body 204. Therefore, the rotation of the ball screw 203 causes the cam member 206 to linearly move in the Z direction, and thereby the Z movable body 204 also linearly moves in the Z direction. Although not shown in FIG. 36, a guide member that guides the cam member 206 to move in the Z direction without being displaced in the X direction or the Y direction may be provided on the member that supports the tip of the ball screw 203. good.

  The cam member 206 and the Z movable body 204 may be fixed integrally, or may be connected by a plate spring or a flexure having high rigidity in the Z direction and low rigidity in the X and Y directions. . Alternatively, a spherical seat may be formed on each of the upper surface of the cam member 206 and the lower surface of the Z movable body 204, and steel balls may be provided between the spherical seats. In this way, the cam member 206 and the Z movable body 204 are supported with high rigidity in the Z direction, and a relatively small inclination between the cam member 206 and the Z movable body 204 around the steel ball is allowed. be able to. 36, elastic support members 208A and 208B for supporting most of the weight of the cylindrical mask M (mask holding drum 21) are provided between the Z movable body 204 and the frame 200.

  The elastic support members 208A and 208B are constituted by air pistons whose length is changed by supplying compressed gas to the inside, and the load of the cylindrical mask M (mask holding drum 21) supported by the Z movable body 204 is pneumatically applied. Support by. When the cylindrical body 21K as the rotation axis of the cylindrical mask M (mask holding drum 21) is supported by the pad portion 204P of the Z movable body 204, the cylindrical mask M (mask holding drum 21) having a different diameter naturally has its own weight. Different. For this reason, the pressure of the compressed gas supplied into the air piston as the elastic support members 208A and 208B is adjusted according to its own weight. In this way, the load in the Z direction acting between the ball screw 203 and the nut portion in the cam member 206 is greatly reduced, and the ball screw 203 can be rotated with an extremely small torque. And deformation of the frame 200 due to heat generation or the like can be suppressed.

  Although not shown in FIG. 36, the position of the Z movable body 204 in the Z direction is precisely measured with a measurement resolution of submicron or less by a length measuring device such as a linear encoder, and driven based on the measured value. Source 202 is servo controlled. Furthermore, a load sensor that measures a change in load acting between the Z movable body 204 and the cam member 206 or a strain sensor that measures deformation of the cam member 206 due to the Z-direction stress is provided, and the measurement values from the respective sensors are provided. Accordingly, the pressure of the compressed gas (gas supply and exhaust) supplied to the air piston as the elastic support members 208A and 208B may be servo-controlled.

  Furthermore, after the cylindrical mask M (mask holding drum 21) is mounted on the pad portion 204P of the Z movable body 204 and the height in the Z direction by the drive source 202 is set to a predetermined position, the illumination optical system IL and projection optics During the various adjustments and calibration of the system PL, or based on the result of the calibration, the position of the cylindrical mask M (mask holding drum 21) in the Z direction may be slightly moved again. The support mechanism including the Z movable body 204 in FIG. 36 is also provided on the shaft on the opposite side of the cylindrical mask M (mask holding drum 21), and the Z direction of each Z movable body 204 of the support mechanism provided on both sides. By adjusting the position individually, the slight inclination of the rotation center axis AX1 with respect to the XY plane can also be adjusted. As described above, when the position adjustment and the inclination adjustment of the mounted cylindrical mask M (mask holding drum 21) in the Z direction are completed, the Z movable body 204 is mechanically clamped to the guide rail portions 201A and 201B (that is, the frame 200). May be.

  If the maximum diameter of the cylindrical mask M (mask holding drum 21) that can be mounted on the projection exposure apparatus is DSa and the minimum diameter is DSb, the moving stroke of the Z movable body 204 in the Z direction may be (DSa−DSb) / 2. . As an example, if the maximum diameter of the mountable cylindrical mask M (mask holding drum 21) is 300 mm and the minimum diameter is 240 mm, the moving stroke of the Z movable body 204 is 30 mm.

  The cylindrical mask M having a diameter of 300 mm means that the pattern forming region as the mask M can be expanded by 60 mm × π≈188 mm in the circumferential direction (scanning exposure direction) of the cylindrical mask with respect to the cylindrical mask M having a diameter of 240 mm. To do. When a planar mask is moved in one dimension as in a conventional scanning exposure apparatus, expanding the pattern formation region in the scanning direction increases the size of the mask stage corresponding to the dimension expansion of the planar mask by 180 mm or more, and the mask stage. The body structure for enlarging the moving stroke of 180 mm or more is increased. On the other hand, as shown in FIG. 36, the Z movable body 204 that supports the rotation axis AX1 (shaft 21S) of the cylindrical mask M (mask holding drum 21) can be precisely moved in the Z direction. It is possible to easily cope with the enlargement of the pattern formation region of the mask without increasing the size of other parts of the apparatus.

<Device manufacturing method>
Next, a device manufacturing method will be described with reference to FIG. FIG. 37 is a flowchart showing a device manufacturing method by the device manufacturing system. This device manufacturing method can be realized by any of the first to seventh embodiments.

  In the device manufacturing method shown in FIG. 37, first, for example, a function / performance design of a display panel using a self-luminous element such as an organic EL is performed, and necessary circuit patterns and wiring patterns are designed by CAD (step S201). Next, a mask M for a necessary layer is manufactured based on the pattern for each layer designed by CAD or the like (step S202). In addition, a supply roll FR1 around which a flexible substrate P (resin film, metal foil film, plastic, or the like) serving as a display panel base material is wound is prepared (step S203). The roll-shaped substrate P prepared in step S203 has a surface modified as necessary, a pre-formed base layer (for example, micro unevenness by an imprint method), and light sensitivity. The functional film or transparent film (insulating material) previously laminated may be used.

  Next, a backplane layer composed of electrodes, wiring, insulating films, TFTs (thin film semiconductors), etc. constituting the display panel device is formed on the substrate P, and the organic EL is stacked on the backplane layer. A light emitting layer (display pixel portion) is formed by a self-luminous element such as (Step S204). This step S204 includes a conventional photolithography process in which the photoresist layer is exposed using the exposure apparatus U3 described in the previous embodiments, but a photosensitive silane coupling material is applied instead of the photoresist. Patterning the exposed substrate P to form a pattern based on hydrophilicity and water repellency on the surface, and wet processing for patterning the photosensitive catalyst layer and patterning the metal film (wiring, electrode, etc.) by electroless plating The process includes a process or a printing process in which a pattern is drawn with a conductive ink containing silver nanoparticles, or the like.

  Next, the substrate P is diced for each display panel device continuously manufactured on the long substrate P by a roll method, or a protective film (environmental barrier layer) or a color filter is formed on the surface of each display panel device. A device is assembled by pasting sheets or the like (step S205). Next, an inspection process is performed to determine whether the display panel device functions normally or satisfies desired performance and characteristics (step S206). As described above, a display panel (flexible display) can be manufactured.

  In the exposure apparatus according to the above-described embodiment and its modification, various subsystems including the respective constituent elements recited in the claims of the present application are maintained so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Manufactured by assembling. In order to ensure these various accuracies, before and after the exposure apparatus is assembled, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, Adjustments are made to the system to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection between the various subsystems, wiring connection of the electric circuit, pipe connection of the atmospheric pressure circuit, and the like. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  Moreover, the component of the said embodiment and its modification can be combined suitably. Some components may not be used. Furthermore, substitution or change of components can be performed without departing from the gist of the present invention. In addition, as long as it is permitted by law, all the publications related to the exposure apparatus and the like cited in the above-described embodiments and the descriptions of US patents are incorporated as a part of the description of this specification. As described above, all other embodiments and operation techniques made by those skilled in the art based on the above-described embodiments are all included in the scope of the present invention.

DESCRIPTION OF SYMBOLS 1 Device manufacturing system 2 Substrate supply apparatus 4 Substrate collection | recovery apparatus 5 High-order control apparatus U3 Exposure apparatus (substrate processing apparatus)
M mask IR1 to IR6 illumination area IL1 to IL6 illumination optical system ILM illumination optical module PA1 to PA6 projection area PLM projection optical module

Claims (28)

A substrate processing apparatus including a projection optical system that projects a light beam from a pattern of a mask arranged in an illumination area of illumination light onto a projection area where a substrate is arranged,
A first support member that supports one of the mask and the substrate so as to be along a first surface curved in a cylindrical shape with a predetermined curvature in one of the illumination region and the projection region; ,
A second support member that supports the other of the mask and the substrate so as to follow a predetermined second surface in the other region of the illumination region and the projection region;
The first support member is rotated, one of the mask and the substrate supported by the first support member is moved in a scanning exposure direction, and the second support member is moved, and the second support member is A moving mechanism for moving the other of the supporting mask and the substrate in the scanning exposure direction;
With
The projection optical system forms an image of the pattern on a predetermined projection image plane,
The moving mechanism sets a moving speed of the first support member and a moving speed of the second support member, and becomes a plane or a plane having a larger curvature between the projection image plane of the pattern and the exposure plane of the substrate. A substrate processing apparatus in which the moving speed on the side is relatively smaller than the moving speed on the other side.   The moving mechanism is an image in which the projection image plane and the exposure plane are relatively shifted with respect to the scanning exposure direction due to a difference in curvature between the projection image plane of the pattern and the exposure plane of the substrate in the projection area. The substrate processing apparatus according to claim 1, wherein the relative difference in the moving speed is set so that an average absolute value of the displacement amount is smaller than a minimum dimension of the image of the pattern formed on the projection image plane. .   The moving mechanism is an image in which the projection image plane and the exposure plane are relatively shifted with respect to the scanning exposure direction due to a difference in curvature between the projection image plane of the pattern and the exposure plane of the substrate in the projection area. The substrate processing apparatus according to claim 1, wherein the relative difference in the moving speed is set so that an average absolute value of the displacement amount is smaller than a minimum dimension of the pattern image determined by the resolving power of the projection optical system.   The moving mechanism is an image in which the projection image plane and the exposure plane are relatively shifted with respect to the scanning exposure direction due to a difference in curvature between the projection image plane of the pattern and the exposure plane of the substrate in the projection area. The moving speed is such that an average value of the square of the displacement amount is smaller than the minimum dimension of the pattern image determined by the resolving power of the projection optical system or the minimum dimension of the image of the pattern formed on the projection image plane. The substrate processing apparatus according to claim 1, wherein the relative difference is set.   The moving mechanism is configured such that, during the scanning exposure, a relative image displacement amount between the projection image plane and the exposure plane deviated in the projection area is zero in at least three positions in the scanning exposure direction of the projection area. The substrate processing apparatus according to claim 2, wherein a relative difference in the moving speed is set so that The projection optical system is composed of a plurality of projection optical modules having the same configuration,
6. The substrate processing apparatus according to claim 1, wherein the projection optical modules are arranged in a row in a direction orthogonal to the scanning exposure direction, and each project the light flux onto the corresponding projection region. .   The plurality of projection optical modules are arranged in at least two rows in the scanning exposure direction, and an interval between the adjacent projection optical modules on the side of the first support member and an interval on the side of the second support member are the first. The substrate processing apparatus according to claim 6, wherein the substrate processing apparatus is set in accordance with a ratio between a moving speed of the support member and a moving speed of the second support member.   The plurality of projection optical modules are arranged in at least two rows in the scanning exposure direction, and ends of the projection areas of the adjacent projection optical modules partially overlap each other in a direction orthogonal to the scanning exposure direction. The substrate processing apparatus according to 6 or 7. The first support member supports the mask;
The substrate processing apparatus according to claim 1, wherein the second support member supports the substrate. The first support member supports the substrate;
The substrate processing apparatus according to claim 1, wherein the second support member supports the mask.   The substrate processing apparatus according to claim 1, wherein the second surface is curved into a cylindrical surface with a predetermined curvature. The width of the projection area in the scanning exposure direction is ± A, the radius of curvature of the projection image surface on which the pattern image is formed is Rm, the radius of curvature of the exposure surface of the substrate in the scanning exposure direction is Rp, and the scanning exposure The angular velocity of the projection image surface at the time of scanning is ωm, the angular velocity of the exposure surface at the time of scanning exposure is ωp, the numerical aperture of the projection optical system is NA, the exposure wavelength is λ, and the process constant is k. 12. The following equation is satisfied, where V is a moving speed serving as a reference between the projection image plane and the exposure plane at the time, and x is a movement position within the width ± A of the projection area. 2. The substrate processing apparatus according to 1.

One of the first support member and the second support member can replace the mask to be supported,
13. The device according to claim 1, wherein at least one of a moving speed of the first support member, a moving speed of the second support member, and a width of the projection region in the scanning exposure direction is adjusted based on the replaced mask. The substrate processing apparatus according to one item. Forming the mask pattern on the substrate using the substrate processing apparatus according to claim 1;
Supplying the substrate to the substrate processing apparatus. A pattern formed on one surface of a mask curved in a cylindrical shape with a predetermined curvature radius is projected onto the surface of a flexible substrate supported in a cylindrical or planar shape via a projection optical system, and the mask is curved. The pattern is projected by the projection optical system by moving the substrate at a predetermined speed along the surface of the substrate supported in the cylindrical or planar shape while moving at a predetermined speed along the one surface. An exposure method of scanning and exposing an image on the substrate,
Rm is a radius of curvature of the projection image plane on which the projection image of the pattern formed by the projection optical system is formed in a best focus state, and Rp is a radius of curvature of the surface of the substrate supported in a cylindrical or planar shape. When the moving speed of the pattern image moving along the projection image plane by the movement of Vm is Vm, and the predetermined speed along the surface of the substrate is Vp, Vm> Vp is set when Rm <Rp, A scanning exposure method in which Vm <Vp is set when Rm> Rp.   The scanning exposure method according to claim 15, wherein the curvature radius Rm and the curvature radius Rp are set in an arbitrary range of 0 <Rm ≦ ∞ and 0 <Rp ≦ ∞ under the condition of Rm ≠ Rp. An illumination optical system for guiding illumination light to a cylindrical mask having a pattern on the outer peripheral surface of a curved surface curved with a constant curvature radius from a predetermined axis;
A substrate support mechanism for supporting the substrate;
A projection optical system that projects the pattern of the cylindrical mask illuminated by the illumination light onto the substrate supported by the substrate support mechanism;
An exchange mechanism for exchanging the cylindrical mask;
An adjustment unit that adjusts at least one of at least part of the illumination optical system and at least part of the projection optical system when the exchange mechanism replaces the cylindrical mask with a cylindrical mask having a different diameter;
Exposure apparatus. The substrate support mechanism is
A substrate support drum having a curved surface that curves with a certain radius from a predetermined axis, and a portion of the substrate is wound around the curved surface and rotates about the axis;
The exposure apparatus according to claim 17, wherein the projection optical system projects the pattern of the cylindrical mask illuminated with the illumination light onto the substrate disposed on the curved surface of the substrate support drum. When the exchange mechanism is replaced with a cylindrical mask having a different diameter,
The adjusting unit adjusts at least one of at least a part of the illumination optical system and at least a part of the projection optical system based on information of the cylindrical masks having different diameters, and then an outer periphery of the cylindrical mask having the different diameters The exposure apparatus according to claim 17 or 18, wherein the exposure apparatus is adjusted using at least a pattern for adjustment provided on a surface and a portion of the substrate support mechanism that supports the substrate. The cylindrical masks having different diameters have an information storage unit on the surface for storing information,
Information on the cylindrical masks having different diameters is stored in the information storage unit or included in exposure information on exposure conditions,
The exposure apparatus according to claim 19, wherein the adjustment unit acquires information of the cylindrical mask having a different diameter from the information storage unit or the exposure information.   The exposure apparatus according to claim 19, further comprising a measurement device that measures a cylindrical mask to be exchanged and acquires information on the cylindrical masks having different diameters. The projection optical system includes both a rotation center axis of the cylindrical mask and a rotation center axis of the substrate support drum, and are arranged with each other across a plane parallel to both. A projection optical system,
The cylindrical masks having different diameters exchanged by the exchange mechanism are positioned in the illumination field of the first projection optical system in a direction orthogonal to the rotation center axis of the cylinder mask and the rotation center axis of the substrate support drum. The exposure apparatus according to any one of claims 17 to 21, which is arranged so that a position of an illumination field of the second projection optical system is not changed.   The exposure apparatus according to any one of claims 17 to 22, wherein parts can be exchanged in correspondence with a plurality of cylindrical masks having different diameters. Mask holding that has a pattern on an outer peripheral surface curved in a cylindrical shape with a constant radius from a predetermined axis, and is mounted so that one of a plurality of cylindrical masks having different diameters can be exchanged and rotated around the predetermined axis Mechanism,
An illumination system for irradiating illumination light to the pattern of the cylindrical mask;
A substrate support mechanism for supporting a substrate exposed with light from the pattern of the cylindrical mask irradiated with the illumination light along a curved surface or plane;
An adjustment unit that adjusts at least the distance between the predetermined axis and the substrate support mechanism in accordance with the diameter of the cylindrical mask mounted on the mask holding mechanism;
Exposure apparatus. The plurality of cylindrical masks having different diameters are transmissive cylindrical masks having a transmissive pattern on the outer peripheral surface,
The adjustment unit sets an interval between an outer peripheral surface of the transmission type cylindrical mask mounted on the mask holding mechanism and the substrate supported by the substrate support mechanism within a predetermined allowable range;
The exposure apparatus according to claim 24. The illumination system includes an illumination optical system that irradiates an illumination light beam extending in a slit shape in the direction of the predetermined axis from the inner side of the transmissive cylindrical mask toward the outer peripheral surface, and the adjustment unit includes the illumination unit Adjusting the width of the luminous flux in the rotation direction of the transmission type cylindrical mask according to the diameter of the transmission type cylindrical mask to be mounted;
The exposure apparatus according to claim 25. An exposure apparatus according to any one of claims 17 to 26;
A substrate supply apparatus for supplying the substrate to the exposure apparatus;
A device manufacturing system comprising: Using the exposure apparatus according to any one of claims 17 to 26, exposing the substrate to the pattern of the cylindrical mask;
Forming a device corresponding to the pattern of the cylindrical mask on the substrate by processing the exposed substrate.

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