KR20150143741A - Substrate processing apparatus, device manufacturing method, scanning exposure method, exposure apparatus, device manufacturing system, and device manufacturing method - Google Patents

Abstract

A first support member for supporting one of the mask and the substrate so as to follow a first surface curved in a cylindrical surface shape with a predetermined curvature and a second support member for supporting the other of the mask and the substrate along the predetermined second surface, And a moving mechanism for rotating the first supporting member and moving the second supporting member so as to move the mask and the substrate in the scanning exposure direction. The projection optical system includes a projection optical system An image of a pattern is formed on a predetermined projection upper surface by a projected luminous flux including a principal ray substantially parallel to a line in which the moving speed of the first supporting member and the moving speed of the second supporting member are set And the moving speed of the projection upper surface of the pattern and the exposure surface of the substrate on the side where the curvature is larger or the plane becomes relatively smaller than the other moving speed.

Description

TECHNICAL FIELD The present invention relates to a substrate processing apparatus, a device manufacturing method, a scanning exposure method, an exposure apparatus, a device manufacturing system, and a device manufacturing method,

The present invention relates to a substrate processing apparatus, a device manufacturing method, a scanning exposure method, an exposure apparatus, a device manufacturing system, and a device manufacturing method which project a pattern of a mask onto a substrate and expose the pattern on the substrate.

A display device such as a liquid crystal display, and a device manufacturing system for manufacturing various devices such as a semiconductor. The device manufacturing system includes a substrate processing apparatus such as an exposure apparatus. The substrate processing apparatus disclosed in Patent Document 1 projects an image of a pattern formed on a mask disposed in an illumination area onto a substrate disposed in a projection area, and exposes the pattern on a substrate. The mask used in the substrate processing apparatus may be a flat shape, a cylindrical shape, or the like.

In an exposure apparatus used in a photolithography process, an exposure apparatus for exposing a substrate using a cylindrical or cylindrical mask (hereinafter collectively referred to as a "cylindrical mask") as disclosed in the following patent documents is known (For example, Patent Document 2). There is also known an exposure apparatus that continuously exposes a device pattern for a display panel on a long sheet substrate having a flexible structure using a cylindrical mask (see, for example, Patent Literature 3).

Patent Document 1: Japanese Patent Application Laid-Open No. 2007-299918 Patent Document 2: WO2008 / 029917 Patent Document 3: Japanese Patent Laid-Open Publication No. 2011-221538

Here, the substrate processing apparatus can shorten the scan exposure time for one short (short) area or device area on the substrate by enlarging the exposure area (projection area in a slit shape) in the scanning exposure direction, Productivity such as the number of substrates processed per hour can be improved. However, as described in Patent Document 1, when a rotatable cylindrical mask is used to improve the productivity, the mask pattern is curved in a cylindrical shape, so that the circumferential direction of the mask pattern (cylindrical shape) Direction and the size of the slit-shaped projection area in the scanning exposure direction is increased, the quality (image quality) of the pattern projected and exposed on the substrate may be lowered.

As shown in the above-described Patent Document 2, the cylindrical or cylindrical mask has an outer peripheral surface (cylindrical surface) with a certain radius from a predetermined central axis of rotation (center line), and an electronic device IC chip or the like) is formed on the substrate. When the mask pattern is transferred onto a photosensitive (photosensitive) substrate (wafer), the cylindrical mask is rotated synchronously (synchronously) around the rotation center axis while moving the substrate at a predetermined speed in one direction. In this case, if the diameter of the cylindrical mask is set so that the entire peripheral length of the cylindrical mask corresponds to the length of the substrate, the mask pattern can be scanned and exposed continuously over the length of the substrate. In addition, as in Patent Document 3, by using such a cylindrical mask, only by rotating the cylindrical mask in synchronism with its speed while sending a long flexible sheet substrate (with a photosensitive layer) in a long direction at a predetermined speed, The display panel pattern can be repeatedly and continuously exposed on the substrate. As described above, in the case of using a cylindrical mask, it is expected that the efficiency of the exposure processing of the substrate and the tact are improved and the productivity of electronic devices, display panels, and the like is increased.

However, in the case of exposing a mask pattern for a display panel in particular, the screen size of the display panel may vary from several inches to several tens of inches, and the dimensions and aspect ratios of the mask pattern for that range also vary. In this case, if the diameter of the cylindrical mask that can be mounted on the exposure apparatus or the dimension in the direction of the central axis of rotation is univocally defined, the mask pattern area can be effectively arranged on the outer peripheral surface of the cylindrical mask in correspondence with display panels of various sizes It becomes difficult to arrange them. For example, in the case of a display panel with a large screen size, even though a mask pattern area of one side (surface) of the display panel can be formed almost all around the outer circumferential surface of the cylindrical mask, The mask pattern region for two sides can not be formed and the margin in the circumferential direction (or in the direction of the rotation center axis) increases.

An aspect of the present invention is to provide a substrate processing apparatus, a device manufacturing method, and a scanning exposure method capable of producing a high quality substrate with high productivity.

Another aspect of the present invention is to provide an exposure apparatus, a device manufacturing system, and a device manufacturing method using such an exposure apparatus capable of mounting cylindrical masks of different diameters.

According to a first aspect of the present invention, there is provided a substrate processing apparatus having a projection optical system for projecting a light flux from a pattern of a mask disposed in an illumination region of an illumination light onto a projection region on which a substrate is arranged, A first support member for supporting one of the mask and the substrate so as to follow a first surface curved in a cylindrical shape with a predetermined curvature in one of the two regions, A second support member for supporting the other of the mask and the substrate so as to follow a predetermined second surface in the region of the mask and the substrate, And the second supporting member is moved so that the other of the mask and the substrate supported by the second supporting member faces the image Wherein the projection optical system forms an image of the pattern on a predetermined projected image plane and the moving mechanism moves the first supporting member in a scanning exposure direction, And the moving speed of the second supporting member is set so that the moving speed of the projection upper surface of the pattern and the exposure surface of the substrate on the side where the curvature becomes larger or the plane becomes relatively smaller than the other moving speed, Processing apparatus is provided.

According to a second aspect of the present invention, there is provided a device manufacturing method comprising: forming a pattern of the mask on a substrate using the substrate processing apparatus according to the first aspect; and supplying the substrate to the substrate processing apparatus do.

According to a third aspect of the present invention, there is provided a projection exposure apparatus for projecting a pattern formed on one surface of a mask curved in a cylindrical shape with a predetermined curvature radius onto a surface of a flexible substrate supported in a cylindrical shape or a plane shape through a projection optical system The substrate is moved at a predetermined speed along the surface of the substrate supported in a cylindrical shape or in a planar shape while moving the mask at a predetermined speed along one side of the curved surface so that the projected image of the pattern by the projection optical system is projected onto the substrate Rm represents the radius of curvature of the projected image on which the projected image of the pattern by the projection optical system is formed in the best focus state, Rp represents the radius of curvature of the surface of the substrate supported in a cylindrical or planar shape, Vm denotes a moving velocity of a pattern image moving along the projection image plane, and Vp denotes a predetermined velocity along the surface of the substrate, Rm ≪ Vp > Vp in the case of < Rp, and Vm < Vp in the case of Rm > Rp.

According to a fourth aspect of the present invention, there is provided an illumination optical system, comprising: an illumination optical system for guiding illumination light to a cylindrical mask having a pattern on an outer circumferential surface of a curved surface curved at a predetermined radius of curvature from a predetermined axis; a substrate support mechanism for supporting the substrate; A projection optical system for projecting the pattern of the illuminated cylindrical mask onto the substrate supported by the substrate support mechanism; an exchange mechanism for exchanging the cylindrical mask; and the exchange mechanism for transferring the cylindrical mask to a cylindrical mask And an adjustment unit that adjusts at least one of at least a part of the illumination optical system and at least a part of the projection optical system when the projection optical system is switched.

According to a fifth aspect of the present invention, there is provided an image forming apparatus comprising: a plurality of cylindrical masks having a pattern on an outer circumferential surface curved in a cylindrical shape with a predetermined radius from a predetermined axis and having different diameters, An illumination system for irradiating the pattern of the cylindrical mask with illumination light and a substrate exposed by light from the pattern of the cylindrical mask irradiated by the illumination light are arranged along a curved surface or a plane And an adjusting unit that adjusts a distance between at least the predetermined axis and the substrate supporting mechanism in accordance with the diameter of the cylindrical mask mounted on the mask holding mechanism.

According to a sixth aspect of the present invention, there is provided a device manufacturing system including the above-described exposure apparatus and a substrate supply apparatus for supplying the substrate to the exposure apparatus.

According to a seventh aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: exposing the substrate with the pattern of the cylindrical mask using the exposure apparatus described above; and processing the exposed substrate, A device manufacturing method is provided that includes forming a device.

According to the aspect of the invention, it is possible to suppress the shift (phase displacement) of the image position caused by the projection top surface on which the pattern image is formed and the surface of the substrate onto which the pattern image is transferred, The exposure width at the time of exposure can be increased, and the substrate on which the pattern image is transferred with high quality can be obtained with high productivity.

According to another aspect of the present invention, it is possible to provide an exposure apparatus, a device manufacturing system, and a device manufacturing method capable of high-quality pattern transfer even when a cylindrical mask having different diameters is mounted within a predetermined range.

1 is a diagram showing a configuration of a device manufacturing system according to the first embodiment.
2 is a diagram showing the entire configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment.
3 is a diagram showing the arrangement of an illumination area and a projection area of the exposure apparatus shown in Fig.
4 is a diagram showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in Fig.
5 is a diagram showing exaggerated behaviors of illumination luminous flux and projected luminous flux in a mask.
Fig. 6 is a diagram schematically showing the advancing direction of the illumination luminous flux and the projected luminous flux in the polarizing beam splitter in Fig. 4. Fig.
Fig. 7 is an explanatory diagram showing the relationship between the movement of the projection top surface of the pattern of the mask and the movement of the exposure surface of the substrate. Fig.
8A shows an example of a change in the image shift amount and the difference amount in the exposure width when there is no difference in the peripheral velocity between the projection top surface and the exposure surface FIG.
8B is a graph showing an example of a change in the image shift amount and the difference amount in the exposure width when there is a difference in the peripheral speed between the projection top surface and the exposure surface.
8C is a graph showing an example of a change in the image difference amount in the exposure width when the difference between the exposure surface, the projection top surface, and the main speed is changed.
9 is a graph showing an example of the change in the contrast ratio within the exposure width of the pattern projection image which varies depending on whether there is a difference in the main speed between the projection top surface and the exposure surface.
10 is a diagram showing the entire configuration of an exposure apparatus (substrate processing apparatus) according to the second embodiment.
Fig. 11 is an explanatory view showing exaggerated relation between movement of the projection top surface of the mask pattern and movement of the exposure surface of the substrate. Fig.
12 is a graph showing an example of a change in the image shift amount in the exposure width which varies depending on the presence or absence of a difference in the main speed between the projection top surface and the exposure surface in the second embodiment.
13A is a diagram showing the light intensity distribution of a projected image of the L & S pattern on the mask M. Fig.
13B is a diagram showing the light intensity distribution of the projected image of the isolated line (ISO) pattern on the mask M. Fig.
14 is a graph simulating the contrast value and the contrast ratio of the projected image of the L & S pattern in the state in which there is no main speed difference (before correction).
15 is a graph simulating the contrast value and the contrast ratio of the projected image of the L & S pattern in the state in which the main speed difference exists (after correction).
16 is a graph simulating the contrast value and the contrast ratio of a projected image of an isolated (ISO) pattern in a state in which there is no main speed difference (before correction).
Fig. 17 is a graph simulating the contrast value and the contrast ratio of a projected image of an isolated (ISO) pattern in a state in which the main speed difference exists (after correction).
18 is a graph showing the relationship between the amount of phase displacement (shift amount) and the exposure width when the main speed of the projection top surface of the mask M is changed with respect to the moving speed of the exposure surface on the substrate.
19 is a graph showing an example of a simulation for evaluating an optimal exposure width by the evaluation values Q1 and Q2 obtained by using the displacement amount and resolution.
20 is a diagram showing the entire configuration of an exposure apparatus (substrate processing apparatus) according to the third embodiment.
Fig. 21 is a diagram showing the entire configuration of an exposure apparatus (substrate processing apparatus) according to the fourth embodiment.
22 is an explanatory view showing the relationship between the movement of the projection top surface of the mask pattern and the movement of the exposure surface of the substrate.
23 is a view showing the entire configuration of an exposure apparatus according to the fifth embodiment.
Fig. 24 is a flowchart showing a procedure for replacing the mask used by the exposure apparatus with another mask. Fig.
Fig. 25 is a diagram showing the relationship between the position of the mask-side field-of-view region of the odd-numbered first projection optical system and the position of the mask-side field-of-view region of the even-numbered second projection optical system.
26 is a perspective view showing a mask having an information storage section storing information of the mask on its surface.
27 is a schematic diagram of an exposure condition setting table in which exposure conditions are described.
Fig. 28 is a diagram schematically showing the behavior of illumination luminous flux and projected luminous flux between masks having different diameters, based on the aforementioned Fig. 5.
29 is a diagram showing a change in arrangement of an encoder head or the like in the case of exchanging with a mask having a different diameter.
30 is a diagram of a calibration apparatus.
31 is a diagram for explaining the calibration.
32 is a side view showing an example in which a mask is rotatably supported using an air bearing.
33 is a perspective view showing an example in which a mask is rotatably supported using an air bearing.
34 is a diagram showing the entire configuration of an exposure apparatus according to the sixth embodiment.
Fig. 35 is a diagram showing the entire configuration of an exposure apparatus according to the seventh embodiment.
Fig. 36 is a perspective view showing an example of a partial structure of a support mechanism in the exposure apparatus of the reflection type cylindrical mask M. Fig.
37 is a flowchart showing a device manufacturing method.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A mode (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited to the following embodiments. Incidentally, the constituent elements described below include those that can be easily conceived by those skilled in the art, and substantially the same ones. In addition, the constituent elements described below can be appropriately combined. In addition, various omissions, substitutions or alterations of the constituent elements can be made without departing from the gist of the present invention. For example, the following embodiments are described as a case of manufacturing a flexible display as a device, but the present invention is not limited to this. As the device, a wiring substrate on which a wiring pattern of copper foil or the like is formed, a substrate on which a plurality of semiconductor elements (transistors, diodes, etc.) are formed, or the like can be manufactured.

[First Embodiment]

In the first embodiment, a substrate processing apparatus for performing exposure processing on a substrate is an exposure apparatus. The exposure apparatus is assembled in a device manufacturing system that manufactures devices by performing various processes on the exposed substrate. First, a device manufacturing system will be described.

<Device Manufacturing System>

1 is a diagram showing a configuration of a device manufacturing system according to the first embodiment. The device manufacturing system 1 shown in Fig. 1 is a line (flexible display manufacturing line) for manufacturing a flexible display as a device. The flexible display includes, for example, an organic EL display. This device manufacturing system 1 is a device manufacturing system 1 in which a substrate P is fed from a feed roll FR1 obtained by winding a flexible substrate P in the form of a roll, Called roll-to-roll system in which various processes are continuously performed, and the processed substrate P is wound as a flexible device to the recovery roll FR2. In the device manufacturing system 1 of the first embodiment, the substrate P, which is a film-like sheet, is fed from the feed roll FR1 and the substrate P fed out from the feed roll FR1 is fed sequentially , until they are wound on the rotating roll FR2 via n processing devices U1, U2, U3, U4, U5, ..., Un. First, the substrate P to be processed by the device manufacturing system 1 will be described.

As the substrate P, for example, a foil (foil) made of a metal or an alloy such as a resin film, stainless steel or the like is used. Examples of the material of the resin film include polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, polystyrene resin, And one or more vinyl acetate resins.

It is preferable that the substrate P be selected so as not to have a significantly large thermal expansion coefficient so that the amount of deformation due to heat received in various treatments performed on the substrate P, for example, can be substantially ignored. The thermal expansion coefficient may be set to be smaller than a threshold value according to the process temperature or the like, for example, by mixing an inorganic (inorganic) filler with a resin film. The inorganic filler may be, for example, titanium oxide, zinc oxide, alumina, silicon oxide, or the like. The substrate P may be a very thin glass single layer having a thickness of about 100 mu m manufactured by a float method or the like and may be a laminate obtained by bonding the above resin film, good.

The substrate P constituted in this manner is wound in the form of a roll to become a supply roll FR1 and this supply roll FR1 is mounted in the device manufacturing system 1. [ The device manufacturing system 1 equipped with the supply roll FR1 repeatedly executes various processes for manufacturing one device on the substrate P fed out from the supply roll FR1. Therefore, the substrate P after processing becomes a state in which a plurality of devices are connected. That is, the substrate P fed out from the supply roll FR1 is a substrate for obtaining multiple faces. The substrate P may be formed by modifying the surface of the substrate P by a predetermined pretreatment beforehand or by activating a fine barrier rib structure (concavo-convex structure) for precision patterning on the surface by an imprint method (imprint method) or the like.

The processed substrate P is recovered as a recovery roll FR2 by being wound in a roll shape. The rotating roll FR2 is mounted on a dicing device (not shown). The dicing apparatus to which the rotation roll FR2 is mounted divides (dices) the processed substrate P for each device to obtain a plurality of devices. The dimension of the substrate P is, for example, about 10 cm to 2 m in the width direction (the short direction) and the dimension in the length direction (long direction) is 10 m or more . The dimensions of the substrate P are not limited to the above dimensions.

In Fig. 1, the coordinate system is an orthogonal coordinate system in which the X direction, the Y direction, and the Z direction are orthogonal. The X direction is a direction connecting the supply roll FR1 and the rotation roll FR2 in the horizontal plane, and is the left-right direction in Fig. The Y direction is a direction orthogonal to the X direction in the horizontal plane, and is the front-back direction in Fig. The Y direction is the axial direction of the supply roll FR1 and the recovery roll FR2. The Z direction is a vertical direction, and is a vertical direction in Fig.

The device manufacturing system 1 includes a substrate supply device 2 for supplying a substrate P and processing devices U1 to Un for performing various processes on the substrate P supplied by the substrate supply device 2, A substrate collecting device 4 for collecting a substrate P processed by the processing devices U1 to Un and an upper control device for controlling each device of the device manufacturing system 1 5).

In the substrate feeder 2, a feed roll FR1 is rotatably mounted. The substrate feeder 2 includes a drive roller R1 for feeding the substrate P from the mounted supply roll FR1 and a drive roller R1 for moving the substrate P in the width direction (Y direction) Controller EPC1. The driving roller R1 rotates while sandwiching both the front and back surfaces of the substrate P and sends out the substrate P in the carrying direction from the supply roll FR1 to the rotation roll FR2, (P) to the processing units U1 to Un. At this time, the edge position controller EPC1 controls the position of the substrate P so that the position at the edge in the width direction of the substrate P falls within the range of about 占 10 占 퐉 to about 占 占 퐉 relative to the target position. And the position in the width direction of the substrate P is corrected.

In the substrate collection apparatus 4, a rotation roll FR2 is rotatably mounted. The substrate recovery apparatus 4 includes a drive roller R2 for pulling the processed substrate P toward the recovery roller FR2 and an edge position Controller EPC2. The substrate recovery apparatus 4 rotates while sandwiching both the front and back surfaces of the substrate P by the drive roller R2 so as to pull the substrate P in the transport direction, The substrate P is wound up. At this time, the edge position controller EPC2 is constructed in the same manner as the edge position controller EPC1, and is arranged in the width direction of the substrate P so as not to be disturbed in the width direction .

The processing apparatus U1 is a coating apparatus for applying the photosensitive functional liquid to the surface of the substrate P supplied from the substrate supply apparatus 2. [ As the photosensitive functional liquid, for example, a photoresist, a photosensitive silane coupling material (for example, a photosensitive lyophilic property modifying material, a photosensitive plating reducing material and the like), a UV curing resin liquid and the like are used. The processing apparatus U1 is provided with a dispensing mechanism Gp1 and a drying mechanism Gp2 in this order from the upstream side in the carrying direction of the substrate P. [ The application mechanism Gp1 has a cylinder roller DR1 on which the substrate P is wound and an application roller DR2 opposed to the cylinder roller DR1. The coating mechanism Gp1 holds the substrate P sandwiched by the cylinder roller DR1 and the application roller DR2 while the supplied substrate P is wound around the cylinder roller DR1. The application mechanism Gp1 applies the photosensitive functional liquid by the application roller DR2 while rotating the cylinder roller DR1 and the application roller DR2 while moving the substrate P in the transport direction. The drying mechanism Gp2 blows air for drying such as hot air or dry air to remove the solute (solvent or water) contained in the photosensitive functional liquid to dry the substrate P coated with the photosensitive functional liquid, A photosensitive functional layer is formed on the photosensitive layer (P).

The processing device U2 is a device for transferring the substrate P conveyed from the processing device U1 to a predetermined temperature (for example, several tens to 120 degrees Celsius) so that the photosensitive functional layer formed on the surface of the substrate P is stabilized A heating device for heating. The processing apparatus U2 is provided with a heating chamber HA1 and a cooling chamber HA2 in this order from the upstream side in the carrying direction of the substrate P. [ The heating chamber HA1 is provided with a plurality of rollers and a plurality of air-turn bars inside thereof, and the plurality of rollers and the plurality of air-turn bars constitute a conveying path of the substrate P. The plurality of rollers are provided in rolling contact with the back side of the substrate P, and a plurality of air / turnbars are provided in a non-contact state on the front side of the substrate P. The plurality of rollers and the plurality of air / turnbars are arranged in a meandering (meandering, serpentine) transport path so as to lengthen the transport path of the substrate P. The substrate P passing through the heating chamber HA1 is heated to a predetermined temperature while being conveyed along a serpentine conveying path. The cooling chamber HA2 cools the substrate P to the ambient temperature so that the temperature of the substrate P heated in the heating chamber HA1 coincides with the environmental temperature of the subsequent process (processing device U3). Like the heating chamber HA1, the cooling chamber HA2 is provided with a plurality of rollers therein, and the plurality of rollers are arranged in the form of a serpentine conveying path so as to lengthen the conveying path of the substrate P . The substrate P passing through the inside of the cooling chamber HA2 is cooled while being conveyed along a serpentine conveyance path. A drive roller R3 is provided on the downstream side in the transport direction of the cooling chamber HA2 and the drive roller R3 rotates while sandwiching the substrate P passing through the cooling chamber HA2, And the substrate P is supplied toward the processing unit U3.

The processing apparatus (substrate processing apparatus) U3 is a projection exposure apparatus that applies a pattern such as a circuit for display or a wiring to a substrate (photosensitive substrate) P provided with a photosensitive functional layer on its surface supplied from the processing apparatus U2, . The processing apparatus U3 illuminates an illumination luminous flux on the reflection type mask M and projects and exposes the projection luminous flux obtained by reflecting the illumination luminous flux by the mask M onto the substrate P, The processing apparatus U3 includes a driving roller DR4 for feeding the substrate P supplied from the processing apparatus U2 to the downstream side in the carrying direction and a driving roller DR4 for adjusting the position in the width direction And an edge position controller (EPC3). The driving roller DR4 rotates while sandwiching the both sides of the front and back sides of the substrate P and feeds the substrate P to the downstream side in the carrying direction so that the rotary drum DR5 supporting the substrate P at the exposure position ). The edge position controller EPC3 is constructed in the same manner as the edge position controller EPC1 and corrects the position in the width direction of the substrate P so that the width direction of the substrate P at the exposure position becomes the target position . The processing unit U3 has two sets of driving rollers DR6 and DR7 for feeding the substrate P to the downstream side in the carrying direction in a state in which the substrate P after sag is given a slack. The two sets of driving rollers DR6 and DR7 are arranged at a predetermined interval in the conveying direction of the substrate P. [ The drive roller DR6 rotates while sandwiching the upstream side of the substrate P to be transported and the drive roller DR7 rotates while sandwiching the downstream side of the substrate P to be transported, And supplies the substrate P toward the processing unit U4. At this time, since the substrate P is given slack, it is possible to absorb the fluctuation of the conveying speed occurring on the downstream side in the conveying direction with respect to the driving roller DR7, It is possible to insulate the influence of the exposure process on the photoresist. In order to relatively align (align) the substrate P with a part of the mask pattern of the mask M, alignment marks or the like previously formed on the substrate P are formed in the processing apparatus U3 The alignment microscopes AM1 and AM2 are provided.

The processing apparatus U4 is a wet processing apparatus for carrying out a development process (electromagnetism process), electroless plating process, etc. on the post-exposure substrate P conveyed from the processing apparatus U3. The processing apparatus U4 has therein three processing tanks BT1, BT2, and BT3 layered in the vertical direction (Z direction) and a plurality of rollers for transporting the substrate P therein. The plurality of rollers are disposed so as to be the conveying paths through which the substrates P pass through the inside of the three treatment tanks BT1, BT2, and BT3 in order. A drive roller DR8 is provided downstream of the treatment tank BT3 in the transport direction and rotates while holding the substrate P passing the treatment tank BT3 therebetween, ) To the processing unit U5.

Although not shown, the processing apparatus U5 is a drying apparatus for drying the substrate P carried from the processing apparatus U4. The processing apparatus U5 removes droplets adhering to the substrate P processed in the processing apparatus U4 and adjusts the moisture content of the substrate P. [ The substrate P dried by the processing unit U5 is further conveyed to the processing unit Un via several processing units. Then, after being processed in the processing unit Un, the substrate P is wound up on the recovery roll FR2 of the substrate recovery apparatus 4. [

The upper control device 5 collectively controls the substrate feeding device 2, the substrate collecting device 4 and the plurality of processing devices U1 to Un. The upper control apparatus 5 controls the substrate supply apparatus 2 and the substrate collection apparatus 4 to transport the substrate P from the substrate supply apparatus 2 to the substrate collection apparatus 4. [ The upper control device 5 controls the plurality of processing devices U1 to Un while executing various processes for the substrate P while synchronizing with the transfer of the substrate P. [

&Lt; Exposure Apparatus (Substrate Processing Apparatus) &gt;

Next, the configuration of an exposure apparatus (substrate processing apparatus) as the processing apparatus U3 of the first embodiment will be described with reference to Figs. 2 to 5. Fig. 2 is a diagram showing the entire configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment. 3 is a diagram showing the arrangement of an illumination area and a projection area of the exposure apparatus shown in Fig. 4 is a diagram showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in Fig. Fig. 5 is a diagram showing the states of the illumination luminous flux irradiated to the mask and the projected luminous flux emitted from the mask. Fig. Fig. 6 is a diagram schematically showing the advancing direction of the illumination luminous flux and the projected luminous flux in the polarization beam splitter in Fig. 4; Hereinafter, the processing apparatus U3 is referred to as an exposure apparatus U3.

The exposure apparatus U3 shown in Fig. 2 is a so-called scanning exposure apparatus, which conveys an image of a mask pattern formed on the outer peripheral surface of a cylindrical mask M onto a substrate P). In Fig. 2, the coordinate system is an orthogonal coordinate system in which the X direction, the Y direction, and the Z direction are orthogonal to each other.

First, the mask M used in the exposure apparatus U3 will be described. The mask M is, for example, a reflection type mask using a metal cylindrical body. The mask M is formed in a cylindrical body having an outer circumferential surface (circumferential surface) having a radius of curvature Rm around a first axis AX1 extending in the Y direction. The circumferential surface of the mask M is a mask surface P1 on which a predetermined mask pattern is formed. The mask surface P1 includes an antireflection portion that reflects the light flux in a predetermined direction with high efficiency and a reflection suppression portion that does not reflect the light flux in a predetermined direction or reflects the light flux with low efficiency. The mask pattern is formed by the high-reflection portion and the reflection suppressing portion. Here, the reflection suppressing portion may be made smaller in the amount of light reflected in a predetermined direction. Therefore, even if the light is absorbed or transmitted, the reflection suppressing portion may be reflected (for example, diffuse reflection) outside the predetermined direction. Here, the mask M may comprise the light-absorbing material or the light-transmitting material. As the mask M having the above-described configuration, the exposure apparatus U3 can use a mask made of a cylindrical metal such as aluminum or SUS. For this reason, the exposure apparatus U3 can perform exposure using an inexpensive mask.

All or part of the panel pattern corresponding to one display device may be formed on the mask M, and a pattern for a panel corresponding to a plurality of display devices may be formed. The mask M may be repeatedly formed in a plurality of patterns repeatedly in the circumferential direction around the first axis AX1 and the small pattern for the panel is repeated in the direction parallel to the first axis AX1 A plurality may be formed. In addition, the mask M may be formed with a pattern for a panel of the first display device and a pattern for a panel of the second display device having a different size from the first display device. The mask M may have a circumferential surface having a radius of curvature Rm around the first axis AX1 and is not limited to the shape of the cylindrical body. For example, the mask M may be an arc plate having a circumferential surface. The mask M may be in the form of a thin plate, or the thin plate-like mask M may be curved to have a circumferential surface.

Next, the exposure apparatus U3 shown in Fig. 2 will be described. The exposure apparatus U3 is provided with a mask holding mechanism 11 and a substrate holding mechanism 11 in addition to the driving rollers DR4, DR6 and DR7, the rotary drum DR5, the edge position controller EPC3 and the alignment microscopes AM1 and AM2, A supporting mechanism 12, an illumination optical system IL, a projection optical system PL, and a subordinate control device 16. The exposure apparatus U3 irradiates the illumination light emitted from the light source device 13 to the mask M supported by the mask holding mechanism 11 via the illumination optical system IL and a part of the projection optical system PL, And irradiates the projection light flux (imaging light) reflected by the pattern surface P1 of the mask M onto the pattern surface P1 of the substrate support mechanism 12 To the substrate P supported by the substrate P.

The subordinate control device 16 controls each section of the exposure apparatus U3 and causes each section to execute processing. The lower control device 16 may be part or all of the upper control device 5 of the device manufacturing system 1. [ The lower control device 16 is controlled by the higher control device 5 and may be a device separate from the higher control device 5. [ The subordinate control device 16 includes, for example, a computer.

The mask holding mechanism 11 has a cylindrical drum 21 (also referred to as a mask holding drum) for holding a mask M and a first driving part 22 for rotating the cylindrical drum 21. The cylindrical drum 21 holds the mask M such that the first axis AX1 of the mask M is the center of rotation. The first driving part 22 is connected to the lower control device 16 and rotates the cylindrical drum 21 around the first axis AX1 as a rotation center.

The cylindrical drum 21 of the mask holding mechanism 11 directly forms a mask pattern on its outer circumferential surface by a high-reflectance portion and a low-reflectivity portion, but the present invention is not limited to this configuration. The cylindrical drum 21 serving as the mask holding mechanism 11 may be wound around a reflective mask M of a thin plate shape along the outer circumferential surface thereof. The cylindrical drum 21 serving as the mask holding mechanism 11 may be configured to detachably retain a plate-shaped reflective mask M previously curved in an arc shape with a radius Rm in advance on the outer peripheral surface of the cylindrical drum 21. [

The substrate supporting mechanism 12 includes a substrate supporting drum 25 (rotating drum DR5 in Fig. 1) for supporting the substrate P, a second driving part 26 for rotating the substrate supporting drum 25, A pair of air / turn bars (ATB1, ATB2), and a pair of guide rollers (27, 28). The substrate supporting drum 25 is formed in a cylindrical shape having an outer circumferential surface (circumferential surface) having a radius of curvature Rp about a second axis AX2 extending in the Y direction. Here, the first axis AX1 and the second axis AX2 are parallel to each other, and the plane passing through the first axis AX1 and the second axis AX2 is the center plane CL. A part of the circumferential surface of the substrate supporting drum 25 is a supporting surface P2 for supporting the substrate P. [ That is, the substrate support drum 25 has the substrate P wound on the support surface P2 so as to support the substrate P in a cylindrical shape. The second driving part 26 is connected to the lower control device 16 and rotates the substrate supporting drum 25 about the second axis AX2 as a rotation center. A pair of air / turn bars ATB1 and ATB2 and a pair of guide rollers 27 and 28 are provided on the upstream side and the downstream side of the substrate P in the carrying direction with the substrate supporting drum 25 therebetween Lt; / RTI &gt; The guide roller 27 guides the substrate P conveyed from the driving roller DR4 to the substrate supporting drum 25 via the air turn bar ATB1 and the guide roller 28 guides the substrate to the substrate supporting drum 25 and the substrate P conveyed from the air / turn bar ATB2 to the drive roller DR6.

The substrate supporting mechanism 12 rotates the substrate supporting drum 25 by the second driving unit 26 to rotate the substrate P introduced into the substrate supporting drum 25 toward the supporting surface of the substrate supporting drum 25. [ (In the X direction) at a predetermined speed while being supported at the second position P2.

At this time, the lower control device 16 connected to the first driving part 22 and the second driving part 26 rotates the cylindrical drum 21 and the substrate supporting drum 25 synchronously at a predetermined rotation speed ratio , The mask pattern formed on the mask surface P1 of the mask M is successively formed on the surface of the substrate P wound around the support surface P2 of the substrate support drum 25 As shown in FIG. In the exposure apparatus U3, the first driving section 22 and the second driving section 26 are the moving mechanisms of the present embodiment.

The light source device 13 emits the illumination luminous flux EL1 illuminated to the mask M. [ The light source device 13 has a light source 31 and a light guiding member 32. The light source 31 is a light source that emits light having a predetermined wavelength. The light source 31 is, for example, a lamp light source such as a mercury lamp, a laser diode or a light emitting diode (LED). The illumination light emitted by the light source 31 may be, for example, a bright line (g line, h line or i line) emitted from a lamp light source, an infrared light (DUV light) such as KrF excimer laser light (wavelength 248 nm), an ArF excimer laser (Wavelength: 193 nm). Here, it is preferable that the light source 31 emits the illumination luminous flux EL1 including a wavelength shorter than the i-line (wavelength of 365 nm). (Wavelength of 355 nm) emitted from a YAG laser (third harmonic laser), laser light (wavelength of 266 nm) emitted from a YAG laser (fourth harmonic laser), or a KrF excimer laser And laser light (wavelength of 248 nm) emitted from the light source can be used.

The light guiding member 32 guides the illumination luminous flux EL1 emitted from the light source 31 to the illumination optical system IL. The light guiding member 32 is composed of an optical fiber or a relay module using a mirror or the like. The light guiding member 32 divides the illumination luminous flux EL1 from the light source 31 into a plurality of illumination luminous fluxes EL1 in a plurality of illumination optical systems IL). The light guide member 32 of the present embodiment causes the illumination luminous flux EL1 emitted from the light source 31 to enter the polarization beam splitter PBS as light in a predetermined polarization state. The polarizing beam splitter PBS is provided between the mask M and the projection optical system PL in order to illuminate the mask M and reflects the light flux that becomes the linearly polarized light of the S polarized light, And transmits the light flux that becomes linearly polarized light. Therefore, the light source device 13 emits the illumination luminous flux EL1 in which the illumination luminous flux EL1 incident on the polarization beam splitter PBS becomes a luminous flux of linearly polarized light (S polarized light). The light source device 13 emits a polarized laser beam whose wavelength and phase coincide with the polarization beam splitter PBS. For example, when the light flux emitted from the light source 31 is polarized light, the light source device 13 uses the polarization plane holding fiber as the light guiding member 32, And guides the light while maintaining the polarization state of the output laser light. Further, for example, the light flux output from the light source 31 may be guided to the optical fiber, and the light output from the optical fiber may be polarized in the polarizing plate. That is, in the case where the light flux of the random polarized light is guided, the light source device 13 may polarize the light flux of the random polarized light in the polarizing plate. The light source device 13 may guide the light beam output from the light source 31 by a relay optical system using a lens or the like.

Here, as shown in Fig. 3, the exposure apparatus U3 of the first embodiment is an exposure apparatus that assumes a so-called multi-lens system. 3 shows a plan view (left side view in Fig. 3) of the illumination area IR on the mask M held on the cylindrical drum 21 as viewed from the -Z side, (Right side view in Fig. 3) of the projection area PA on the projection optical system P viewed from the + Z side. Symbol Xs in Fig. 3 indicates the moving direction (rotational direction) of the cylindrical drum 21 and the substrate supporting drum 25. [ The multi-lens-system exposure apparatus U3 illuminates an illumination luminous flux EL1 to a plurality of illumination regions IR1 to IR6 (for example, six in the first embodiment) on the mask M, A plurality of projected luminous fluxes EL2 obtained by reflecting the luminous flux EL1 to the respective illumination regions IR1 to IR6 can be divided into a plurality of projection regions PA1 to PA6 (for example, six in the first embodiment) PA6.

First, a plurality of illumination regions IR1 to IR6 illuminated by the illumination optical system IL will be described. As shown in Fig. 3, the plurality of illumination regions IR1 to IR6 include a first illumination region IR1 on the mask M on the upstream side in the rotational direction with the center plane CL therebetween, The second illumination region IR2, the fourth illumination region IR4 and the sixth illumination region IR4 are arranged on the mask M on the downstream side in the rotation direction, IR6 are arranged. Each of the illumination regions IR1 to IR6 is an elongated trapezoidal region having a parallel short side extending in the axial direction (Y direction) of the mask M and a long side. At this time, each of the trapezoidal illumination regions IR1 to IR6 has its short side located on the center plane CL side and its long side located on the outer side. The first illumination region IR1, the third illumination region IR3, and the fifth illumination region IR5 are arranged at predetermined intervals in the axial direction. The second illumination area IR2, the fourth illumination area IR4 and the sixth illumination area IR6 are arranged at predetermined intervals in the axial direction. At this time, the second illumination region IR2 is disposed between the first illumination region IR1 and the third illumination region IR3 in the axial direction. Likewise, the third illumination region IR3 is disposed between the second illumination region IR2 and the fourth illumination region IR4 in the axial direction. The fourth illumination region IR4 is disposed between the third illumination region IR3 and the fifth illumination region IR5 in the axial direction. The fifth illumination region IR5 is arranged between the fourth illumination region IR4 and the sixth illumination region IR6 in the axial direction. Each of the illumination regions IR1 to IR6 has a triangular shape in which the triangular portions of the oblique side portions of the trapezoidal illumination region adjacent to each other in the Y direction are rotated in the circumferential direction (X direction) (Overlapped) with each other. In the first embodiment, each of the illumination areas IR1 to IR6 is a trapezoidal area, but may be a rectangular area.

The mask M has a pattern formation area A3 in which a mask pattern is formed and a pattern non-formation area A4 in which no mask pattern is formed. The pattern non-formation area A4 is an area which is difficult to reflect, which absorbs the illumination light flux EL1, and is arranged so as to surround the pattern formation area A3 in a frame shape. The first to sixth illumination regions IR1 to IR6 are arranged so as to cover the entire width of the pattern formation region A3 in the Y direction.

The illumination optical system IL is provided with a plurality of (six in the first embodiment, for example) along the plurality of illumination regions IR1 to IR6. The illumination luminous flux EL1 from the light source device 13 enters into each of a plurality of illumination optical systems (divisional illumination optical systems) IL1 to IL6. Each of the illumination optical systems IL1 to IL6 guides each illumination luminous flux EL1 incident from the light source device 13 to each of the illumination areas IR1 to IR6. That is, the first illumination optical system IL1 guides the illumination luminous flux EL1 to the first illumination area IR1, and similarly, the second to sixth illumination optical systems IL2 to IL6 guide the illumination luminous flux EL1 To the second to sixth illumination regions IR2 to IR6. The plurality of illumination optical systems IL1 to IL6 are arranged on the side where the first, third and fifth illumination regions IR1, IR3 and IR5 are disposed (left side in Fig. 2) with the center plane CL therebetween, The first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5 are arranged. The first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5 are arranged at a predetermined interval in the Y direction. The plurality of illumination optical systems IL1 to IL6 are arranged on the side where the second, fourth and sixth illumination regions IR2, IR4 and IR6 are disposed (the right side in Fig. 2) with the center plane CL therebetween, The second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are arranged. The second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are arranged at a predetermined interval in the Y direction. At this time, the second illumination optical system IL2 is disposed between the first illumination optical system IL1 and the third illumination optical system IL3 in the axial direction. Similarly, the third illumination optical system IL3, the fourth illumination optical system IL4, and the fifth illumination optical system IL5 are arranged in the axial direction, between the second illumination optical system IL2 and the fourth illumination optical system IL4, 3 illumination optical system IL3 and the fifth illumination optical system IL5 and between the fourth illumination optical system IL4 and the sixth illumination optical system IL6. The first illumination optical system IL1, the third illumination optical system IL3 and the fifth illumination optical system IL5, the second illumination optical system IL2, the fourth illumination optical system IL4 and the sixth illumination optical system IL6, Are arranged symmetrically with respect to the Y direction.

Next, the respective illumination optical systems IL1 to IL6 will be described with reference to Fig. Since each of the illumination optical systems IL1 to IL6 has the same configuration, the first illumination optical system IL1 (hereinafter simply referred to as 'illumination optical system IL') will be described as an example.

The illumination optical system IL irradiates the illumination luminous flux EL1 from the light source device 13 to the illumination area on the mask M in order to illuminate the illumination area IR (the first illumination area IR1) IR) with Kohler illumination. The illumination optical system IL is a night illumination system using a polarization beam splitter (PBS). The illumination optical system IL includes an illumination optical module ILM, a polarization beam splitter PBS and a quarter wave plate 41 in this order from the incident side of the illumination luminous flux EL1 from the light source device 13. [ .

4, the illumination optical module ILM includes a collimator lens 51, a fly-eye lens 52, a plurality of condenser lenses 53, and a condenser lens 53 in this order from the incident side of the illumination luminous flux EL1 A cylindrical lens 54, an illumination field stop 55 and a plurality of relay lenses 56 and is provided on the first optical axis BX1.

The collimator lens 51 irradiates the entire surface on the incidence side of the fly-eye lens 52 with the light emitted from the light guiding member 32 incident thereon.

The fly-eye lens 52 is provided on the emission side of the collimator lens 51. The center of the exit-side surface of the fly-eye lens 52 is disposed on the first optical axis BX1. The fly-eye lens 52 generates a surface light source image (surface light source image) obtained by dividing the illumination luminous flux EL1 from the collimator lens 51 into a plurality of point light source images (point light source images). The illumination luminous flux EL1 is generated from the surface light source. The plane of the exit side of the fly's eye lens 52 from which the point light source image is generated is transmitted from the fly's eye lens 52 via the illumination field stop 55 to the first concave surface 52 of the projection optical system PL And is arranged so as to be optically conjugate with the pupil plane where the reflection surface of the first concave mirror 72 is located by various lenses reaching the mirror 72. [

The condenser lens 53 is provided on the emission side of the fly-eye lens 52. The optical axis of the condenser lens 53 is arranged on the first optical axis BX1. The condenser lens 53 superimposes the light from each of the plurality of point light source images formed on the emission side of the fly's eye lens 52 on the illumination field stop 55 to form the illumination field stop 55 in a uniform illumination distribution. . The illumination field stop 55 has a trapezoidal or rectangular rectangular opening similar to the illumination area IR shown in Fig. 3, and the center of the opening is disposed on the first optical axis BX1. The opening of the illumination field stop 55 is blocked by the relay lens 56, the polarization beam splitter PBS and the 1/4 wave plate 41 provided in the optical path from the illumination field stop 55 to the mask M And is arranged in an optically conjugate relationship with the illumination area IR on the mask M. [ The relay lens 56 allows the illumination luminous flux EL1 transmitted through the aperture of the illumination field stop 55 to enter the polarization beam splitter PBS. A cylindrical lens 54 is provided at a position adjacent to the illumination field stop 55 as an emission side of the condenser lens 53. [ The cylindrical lens 54 is a flat convex cylindrical dichroic lens whose incident side is a flat surface and the emitting side is a convex cylindrical lens surface. In the cylindrical lens 54, the optical axis of the cylindrical lens 54 is disposed on the first optical axis BX1. The cylindrical lens 54 converges each principal ray of the illumination luminous flux EL1 that irradiates the illumination area IR on the mask M in the XZ plane and makes it parallel to the Y direction.

The polarizing beam splitter PBS is disposed between the illumination optical module ILM and the center plane CL. The polarization beam splitter PBS reflects a light flux that becomes linearly polarized light of S polarized light on the wavefront divided surface and transmits the light flux that becomes linearly polarized light of P polarized light. Here, when the illumination luminous flux EL1 incident on the polarizing beam splitter PBS is linearly polarized light of S polarized light, the illumination luminous flux EL1 is reflected by the wave-front divided surface of the polarizing beam splitter PBS, (41) to become circularly polarized light and irradiate the illumination region (IR) on the mask (M). The projection luminous flux EL2 reflected by the illumination area IR on the mask M is converted from circularly polarized light to linearly polarized P polarized light by passing through the 1/4 wave plate 41, And is directed to the projection optical system PL. It is preferable that the polarization beam splitter PBS reflects most of the illumination luminous flux EL1 incident on the wave-front divided surface and transmits most of the projected luminous flux EL2. Although the polarized light separating property of the polarizing beam splitter PBS is represented by the extinction ratio, the extinction ratio also varies depending on the incident angle of the light beam toward the wavefront dividing surface. Therefore, The numerical aperture (NA) of the illumination luminous flux EL1 and the projected luminous flux EL2 are also designed in consideration of the influence on the imaging performance.

5 shows the behavior of the illumination luminous flux EL1 irradiated on the illumination area IR on the mask M and the projected luminous flux EL2 reflected on the illumination area IR on the XZ plane (the first axis AX1) And a plane orthogonal to the plane of FIG. 5, the illumination optical system IL is arranged so that the principal ray of the projected luminous flux EL2 reflected by the illumination area IR of the mask M becomes telecentric (parallel system) , The main ray of the illumination luminous flux EL1 irradiated onto the illumination area IR of the mask M is intentionally non-telecentric in the XZ plane (plane perpendicular to the axis AX1) (In parallel with the center plane CL). Such a characteristic of the illumination luminous flux EL1 is given by the cylindrical lens 54 shown in Fig. More specifically, a line passing through a point Q1 at the center in the circumferential direction of the illumination area IR on the mask plane P1 and being directed to the first axis AX1 and a line of 1/2 of the radius Rm of the mask plane P1 The curvature of the convex cylindrical lens surface of the cylindrical lens 54 is set such that each principal ray of the illumination luminous flux EL1 passing through the illumination area IR is directed to the intersection Q2 on the XZ plane, . In this way, each principal ray of the projected luminous flux EL2 reflected in the illumination area IR is parallel (telecentric) to a straight line passing through the first axis AX1, the point Q1, and the intersection Q2 in the XZ plane, It becomes a state.

Next, a plurality of projection regions (exposure regions) PA1 to PA6 projected and exposed by the projection optical system PL will be described. 3, a plurality of projection areas PA1 to PA6 on the substrate P are arranged so as to correspond to a plurality of illumination areas IR1 to IR6 on the mask M. In other words, the plurality of projection areas PA1 to PA6 on the substrate P are divided into a first projection area PA1 on the upstream side of the substrate P in the carrying direction, The projection area PA3 and the fifth projection area PA5 are arranged and the second projection area PA2, the fourth projection area PA4 and the sixth projection area PA4 are arranged on the substrate P on the downstream side in the carrying direction PA6 are arranged. Each of the projection areas PA1 to PA6 has an elongated trapezoidal shape (rectangular shape) having a short side extending in the width direction (Y direction) of the substrate P and a long side. At this time, each of the projection areas PA1 to PA6 in the trapezoidal shape is located on the side of the center plane CL with its short side being located on the outer side. The first projection area PA1, the third projection area PA3 and the fifth projection area PA5 are arranged at a predetermined interval in the width direction. The second projection area PA2, the fourth projection area PA4 and the sixth projection area PA6 are arranged at a predetermined interval in the width direction. At this time, the second projection area PA2 is disposed between the first projection area PA1 and the third projection area PA3 in the axial direction. Similarly, the third projection area PA3 is disposed between the second projection area PA2 and the fourth projection area PA4 in the axial direction. The fourth projection area PA4 is disposed between the third projection area PA3 and the fifth projection area PA5 in the axial direction. The fifth projection area PA5 is disposed between the fourth projection area PA4 and the sixth projection area PA6 in the axial direction. Each of the projection areas PA1 to PA6 has triangular portions of oblique sides of a trapezoidal projection area PA adjacent to each other in the Y direction, as in each of the illumination areas IR1 to IR6, (Overlapped) with respect to the conveying direction of the sheets P. At this time, the projection area PA has such a shape that the exposure amount in the overlapping areas of the adjacent projection areas PA is substantially equal to the exposure amount in the non-overlapping areas. The first to sixth projection areas PA1 to PA6 are arranged so as to cover the entire width of the exposure area A7 exposed on the substrate P in the Y direction.

2, the circumferential length from the center point of the illumination area IR1 (and IR3, IR5) on the mask M to the center point of the illumination area IR2 (and IR4, IR6) And the peripheral length from the center point of the projection area PA1 (and PA3, PA5) on the substrate P along the support surface P2 to the center point of the second projection area PA2 (and PA4, PA6) .

The projection optical system PL is provided with a plurality of (six in the first embodiment, for example) according to the plurality of projection areas PA1 to PA6. A plurality of projection luminous fluxes EL2 reflected from a plurality of illumination regions IR1 to IR6 respectively enter a plurality of projection optical systems (division projection optical systems) PL1 to PL6. Each of the projection optical systems PL1 to PL6 guides each of the projected luminous fluxes EL2 reflected by the mask M to the respective projection areas PA1 to PA6. That is, the first projection optical system PL1 guides the projected luminous flux EL2 from the first illumination area IR1 to the first projection area PA1, and similarly, the second to sixth projection optical systems PL2 to PL6 ) Guides the respective projected luminous fluxes EL2 from the second to sixth illumination areas IR2 to IR6 to the second to sixth projection areas PA2 to PA6. The plurality of projection optical systems PL1 to PL6 are arranged on the side where the first, third and fifth projection areas PA1, PA3 and PA5 are disposed (left side in Fig. 2) with the center plane CL therebetween, A first projection optical system PL1, a third projection optical system PL3, and a fifth projection optical system PL5. The first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5 are arranged at a predetermined interval in the Y direction. The plurality of projection optical systems PL1 to PL6 are arranged on the side on which the second, fourth and sixth projection areas PA2, PA4 and PA6 are arranged (right side in Fig. 2) with the center plane CL therebetween, A second projection optical system PL2, a fourth projection optical system PL4, and a sixth projection optical system PL6 are disposed. The second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are arranged at a predetermined interval in the Y direction. At this time, the second projection optical system PL2 is disposed between the first projection optical system PL1 and the third projection optical system PL3 in the axial direction. Similarly, the third projection optical system PL3, the fourth projection optical system PL4 and the fifth projection optical system PL5 are arranged in the axial direction between the second projection optical system PL2 and the fourth projection optical system PL4, 3 projection optical system PL3 and the fifth projection optical system PL5 and between the fourth projection optical system PL4 and the sixth projection optical system PL6. The second projection optical system PL2, the fourth projection optical system PL4 and the sixth projection optical system PL6 constitute a first projection optical system PL1, a third projection optical system PL3 and a fifth projection optical system PL5, Are arranged symmetrically with respect to the Y direction.

Referring again to Fig. 4, the respective projection optical systems PL1 to PL6 will be described. Since each of the projection optical systems PL1 to PL6 has the same configuration, the first projection optical system PL1 (hereinafter simply referred to as a 'projection optical system PL') will be described as an example.

The projection optical system PL projects an image of the mask pattern in the illumination area IR (first illumination area IR1) on the mask M onto the projection area PA on the substrate P. [ The projection optical system PL includes the quarter wave plate 41, the polarizing beam splitter PBS, the projection optical system PL2, and the projection optical system PL in that order from the incident side of the projected luminous flux EL2 from the mask M. [ (PLM).

The 1/4 wave plate 41 and the polarization beam splitter PBS are also used as the illumination optical system IL. In other words, the illumination optical system IL and the projection optical system PL share a 1/4 wave plate 41 and a polarization beam splitter (PBS).

As shown in Fig. 7, the projected luminous flux EL2 reflected by the illumination area IR (see Fig. 3) becomes a telecentric luminous flux whose principal rays are parallel to each other, ). The projection luminous flux EL2 that is circularly polarized light reflected by the illumination area IR is converted from circularly polarized light to linearly polarized light (P polarized light) by the quarter wave plate 41 and then transmitted to the polarizing beam splitter PBS I will join. The projection luminous flux EL2 incident on the polarization beam splitter PBS is incident on the projection optical module PLM shown in Fig. 4 after passing through the polarizing beam splitter PBS.

As an example, the polarizing beam splitter (PBS) is formed by joining two prisms (made of quartz) of triangular shape in the XZ plane or holding them in contact with each other by optical contact so as to have a rectangular shape as a whole. In order to efficiently perform polarized light separation, a multilayer film including hafnium oxide or the like is formed on the bonding surface. The surface of the polarizing beam splitter PBS that receives the projection light flux EL2 from the mask M and the projection light flux EL2 are projected to the first half of the first deflecting member 70 of the projection optical system PL The surface that is projected toward the slope P3 is set to be perpendicular to the principal ray of the projected luminous flux EL2. In addition, the surface of the polarizing beam splitter PBS to which the illumination luminous flux EL1 is incident is set to be perpendicular to the first optical axis BX1 (see Fig. 4) of the illumination optical system IL. In the case where there is concern about resistance to ultraviolet rays or laser light by using an adhesive, bonding by optical contacts without using an adhesive is applied to the bonding surface of the polarizing beam splitter (PBS).

The projected luminous flux EL2 reflected by the illumination area IR becomes a telecentric luminous flux and enters the projection optical system PL. The projection luminous flux EL2 that is circularly polarized light reflected by the illumination area IR is converted from circularly polarized light to linearly polarized light (P polarized light) by the quarter wave plate 41 and then transmitted to the polarizing beam splitter PBS I will join. The projection luminous flux EL2 incident on the polarizing beam splitter PBS is transmitted through the polarizing beam splitter PBS and is then incident on the projection optical module PLM.

The projection optical module PLM is provided corresponding to the illumination optical module ILM. That is, the projection optical module PLM of the first projection optical system PL1 projects the image of the mask pattern of the first illumination area IR1 illuminated by the illumination optical module ILM of the first illumination optical system IL1, And projected onto the first projection area PA1 on the substrate P. [ Similarly, the projection optical module PLM of the second to sixth projection optical systems PL2 to PL6 is provided with the second to sixth illumination optical systems IL1 to IL6 illuminated by the projection optical module ILM of the second to sixth illumination optical systems IL2 to IL6. 6 The image of the mask pattern of the illumination areas IR2 to IR6 is projected onto the second to sixth projection areas PA2 to PA6 on the substrate P. [

4, the projection optical module PLM includes a first optical system 61 that forms an image of the mask pattern in the illumination area IR on the intermediate image plane P7, A second optical system 62 for re-coupling at least a part of the intermediate image formed by the projection optical system 62 to the projection area PA of the substrate P and a projection field stop 63 disposed at the intermediate top plane P7 where the intermediate image is formed . The projection optical module PLM includes a focus correction optical member 64, an image shift optical member 65, a magnification correction optical member 66, a rotation correction mechanism 67, And an adjusting mechanism (polarization adjusting means) 68.

The first optical system 61 and the second optical system 62 are, for example, a telecentric catadioptric optical system in which a Dyson system is modified. The optical axis of the first optical system 61 is substantially orthogonal to the center plane CL thereof (hereinafter referred to as the "second optical axis BX2"). The first optical system 61 includes a first deflecting member 70, a first lens group 71, and a first concave mirror 72. The first biasing member 70 is a triangular prism having a first reflecting surface P3 and a second reflecting surface P4. The first reflecting surface P3 reflects the projected luminous flux EL2 from the polarizing beam splitter PBS and passes the reflected projected luminous flux EL2 through the first lens group 71 to form a first concave mirror 72 as shown in FIG. The second reflective surface P4 is a surface on which the projected luminous flux EL2 reflected by the first concave mirror 72 passes through the first lens group 71 and is incident, (63). The first lens group 71 includes various lenses, and the optical axes of the various lenses are disposed on the second optical axis BX2. The first concave mirror 72 is set in the optical surface of the first optical system 61 and is set in an optically conjugate relationship with a plurality of point light source images generated by the fly-eye lens 52.

The projected luminous flux EL2 from the polarizing beam splitter PBS is reflected by the first reflecting surface P3 of the first deflecting member 70 and is reflected by the view of the upper half of the first lens group 71 And is incident on the first concave mirror 72. The projection luminous flux EL2 incident on the first concave mirror 72 is reflected by the first concave mirror 72 and passes through the visual field in the lower half of the first lens group 71 Is incident on the second reflecting surface (P4) of the first biasing member (70). The projection luminous flux EL2 incident on the second reflection surface P4 is reflected by the second reflection surface P4 and passes through the focus correction optical member 64 and the phase shift optical member 65, Is incident on the diaphragm (63).

The projection field stop 63 has an opening that defines the shape of the projection area PA. That is, the shape of the opening of the projection field stop 63 defines the substantial shape of the projection area PA. Therefore, in the case where the shape of the opening of the illumination field stop 55 in the illumination optical system IL is a substantially trapezoidal shape similar to the substantial shape of the projection area PA, the projection field stop 63 can be omitted have.

The second optical system 62 has the same structure as the first optical system 61 and is provided symmetrically with the first optical system 61 with the intermediate top face P7 interposed therebetween. The second optical system 62 has its optical axis (hereinafter referred to as "third optical axis BX3") substantially orthogonal to the center plane CL and parallel to the second optical axis BX2. The second optical system 62 includes a second deflecting member 80, a second lens group 81, and a second concave mirror 82. The second biasing member 80 has a third reflecting surface P5 and a fourth reflecting surface P6. The third reflecting surface P5 reflects the projected luminous flux EL2 from the projection visual field diaphragm 63 and passes the reflected projected luminous flux EL2 through the second lens group 81 to form a second concave mirror 82, respectively. The fourth reflecting surface P6 is a surface on which the projected luminous flux EL2 reflected by the second concave mirror 82 passes through the second lens group 81 and is incident, PA. The second lens group 81 includes various lenses, and the optical axes of the various lenses are disposed on the third optical axis BX3. The second concave mirror 82 is set in a mutually optically conjugate relationship with a plurality of point light source images formed on the first concave mirror 72 and disposed on the coplanar surface of the second optical system 62.

The projected luminous flux EL2 from the projection field stop 63 is reflected by the third reflecting surface P5 of the second deflecting member 80 and passes through the view area of the upper half of the second lens group 81 Is incident on the second concave mirror (82). The projection luminous flux EL2 incident on the second concave mirror 82 is reflected by the second concave mirror 82 and passes through the field of view of the lower half of the second lens group 81, Is incident on the fourth reflecting surface (P6) of the reflecting mirror (80). The projection luminous flux EL2 incident on the fourth reflection surface P6 is reflected by the fourth reflection surface P6 and passes through the optical element 66 for magnification correction and is projected onto the projection area PA. As a result, the image of the mask pattern in the illumination area IR is projected in the projection area PA at the magnification (x1).

The focus correcting optical member 64 is disposed between the first deflecting member 70 and the projection field stop 63. The focus correction optical member 64 adjusts the focus state of the image of the mask pattern projected on the substrate P. [ The focus correction optical member 64 is formed by, for example, two wedge-shaped prisms in the opposite direction (in the direction opposite to the X direction in Fig. 4) and overlapping each other to form a transparent parallel plate as a whole. The pair of prisms are slid in the direction of the slope without changing the interval between the surfaces facing each other, thereby varying the thickness of the parallel plate. As a result, the effective optical path length of the first optical system 61 is finely adjusted, and the pint state on the mask pattern formed in the intermediate top plane P7 and the projection area PA is finely adjusted.

The phase shift optical member 65 is disposed between the first deflecting member 70 and the projection field stop 63. The phase shift optical member 65 adjusts an image of the mask pattern projected on the substrate P so as to be movable within the image plane. The phase shift optical member 65 is composed of a transparent parallel flat glass that can tilt in the XZ plane of Fig. 4 and a transparent parallel flat glass that is tiltable in the YZ plane of Fig. The phase of the mask pattern formed in the intermediate top plane P7 and the projection area PA can be finely shifted in the X and Y directions by adjusting the angular amounts of the two parallel flat glass plates.

The magnification correction optical member 66 is disposed between the second deflecting member 80 and the substrate P. [ The magnification-correcting optical member 66 includes, for example, a concave lens, a convex lens, and a concave lens arranged coaxially at predetermined intervals, the front and rear concave lenses fixed, and the convex lens between the optical axis (main ray) Direction. Thereby, the image of the mask pattern formed in the projection area PA is enlarged or reduced by a small amount isotropically while maintaining the telecentric image formation state. The optical axis of the three lens groups constituting the magnification-correcting optical member 66 is inclined in the XZ plane so as to be parallel to the principal ray of the projected luminous flux EL2.

The rotation correcting mechanism 67 slightly rotates the first biasing member 70 about an axis parallel to the Z axis by, for example, an actuator (not shown). The rotation correcting mechanism 67 can slightly rotate the image of the mask pattern formed on the intermediate top face P7 within the intermediate top face P7 by the rotation of the first deflecting member 70. [

The polarization adjusting mechanism 68 adjusts the polarization direction by rotating the quarter wave plate 41 around an axis orthogonal to the plate surface by, for example, an actuator (not shown). The polarization adjusting mechanism 68 can adjust the illuminance of the projected luminous flux EL2 projected onto the projection area PA by rotating the 1/4 wave plate 41. [

In the projection optical system PL constructed as described above, the projected luminous flux EL2 from the mask M is emitted from the illumination area IR in a telecentric state (each principal ray is parallel to each other) Passes through the wave plate 41 and the polarizing beam splitter PBS, and is incident on the first optical system 61. The projected luminous flux EL2 incident on the first optical system 61 is reflected by the first reflecting surface (flat mirror) P3 of the first deflecting member 70 of the first optical system 61, (71) and reflected by the first concave mirror (72). The projection luminous flux EL2 reflected by the first concave mirror 72 passes through the first lens group 71 again and is reflected by the second reflection surface (planar mirror) P4 of the first deflecting member 70 And passes through the focus correcting optical member 64 and the phase shift optical member 65 to be incident on the projection field stop 63. The projection luminous flux EL2 that has passed through the projection field stop 63 is reflected by the third reflection surface (flat mirror) P5 of the second deflecting member 80 of the second optical system 62, (81) and reflected by the second concave mirror (82). The projection luminous flux EL2 reflected by the second concave mirror 82 again passes through the second lens group 81 and is reflected by the fourth reflection plane (planar mirror) P6 of the second deflecting member 80 And enters the optical element 66 for magnification correction. The projection luminous flux EL2 emitted from the magnification correction optical member 66 is incident on the projection area PA on the substrate P and the image of the mask pattern shown in the illumination area IR is projected onto the projection area PA (X1).

In the present embodiment, the second reflecting surface (flat mirror) P4 of the first deflecting member 70 and the third reflecting surface (flat mirror) P5 of the second deflecting member 80 are arranged on the center plane (Planar mirror) P3 of the first deflecting member 70 and the second deflecting member 80 of the first deflecting member 70 are set to be inclined at 45 degrees with respect to the first deflecting member 70 (or the optical axes BX2 and BX3) (Plane mirror) P6 is set to an angle other than 45 DEG with respect to the center plane CL (or optical axis BX2, BX3). The angle? (Absolute value) with respect to the center plane CL (or the optical axis BX2) of the first reflecting surface P3 of the first deflecting member 70 is the point Q1, the point Q2, Is defined as a relationship of? DEG = 45 DEG +? DEG / 2 when the angle formed by the straight line passing through the first axis AX1 and the center plane CL is? Degrees. Similarly, the angle? (Absolute value) with respect to the center plane CL (or the optical axis BX2) of the fourth reflecting surface P6 of the second biasing member 80 is larger than the angle? When the angle between the principal ray of the projected luminous flux EL2 passing through the center point in the projection area PA with respect to the circumferential direction and the center plane CL in the ZX plane is defined as? 占 = 45 占 +? / Two-person relationship. It should be noted that the angle epsilon is a function of the size of the projection optical system PL on the side of the mask M side and the substrate P side, the dimensions of the polarization beam splitter (PBS), the size of the illumination region IR, But it is set to about 10 to 30 degrees, depending on the dimension in the circumferential direction and the like.

&Lt; Relation between the projection upper surface of the mask pattern and the exposure surface of the substrate &gt;

7 is an explanatory diagram showing an exaggerated relationship between the projected image surface Sm of the cylindrical pattern surface P1 of the mask M and the exposure surface Sp of the substrate P supported in a cylindrical shape . Next, the relationship between the projection upper surface of the mask pattern in the exposure apparatus U3 of the first embodiment and the exposure surface of the substrate will be described with reference to FIG.

In the exposure apparatus U3, the projected luminous flux EL2 is imaged by the projection optical system PL, so that the projected image plane Sm of the pattern of the mask M is formed. The projected image plane Sm is a position at which the pattern of the mask M is imaged and is the best focus position. It is also possible to use a surface other than the best focus by changing the projected image plane Sm. For example, the surface may be formed at a position a certain distance from the best focus. Here, the mask M is arranged on a curved surface (curved line in the ZX plane) having a radius of curvature Rm as described above. The projected image plane Sm can be approximated in the Y direction in the range of the exposure width 2A which is the dimension in the circumferential direction of the projection area PA because the projection magnification of the projection optical system PL is equally multiplied. Can be regarded as a part of a curved surface having a radius of curvature Rm centered on the extending center line AX1 '. As described above, since the substrate P is held by the supporting surface P2 of the cylindrical substrate supporting drum 25, the exposure surface Sp of the surface of the substrate P is a curved surface having a radius of curvature Rp (The curve in the ZX plane). In addition, assuming that the center line AX1 ', which is the center of curvature of the projected image plane Sm, and the central axis AX2 of the substrate support drum 25 are parallel to each other and are included in a plane KS parallel to the YZ plane, KS is positioned so as to include a tangent line Cp extending in the Y direction where the projected image surface Sm having a radius Rm and the exposure surface Sp having a radius Rp are in contact with each other. For the sake of explanation, the radius Rp of the exposure surface Sp and the radius Rm of the projection image surface Sm are set to be Rp> Rm.

Here, the cylindrical drum 21 holding the mask M is rotated by the first driving part 22 at the angular speed? M, and the substrate supporting drum 25 supporting the substrate P (exposure surface Sp) Is rotated at the angular speed? P by the second driving unit 26. [ A plane perpendicular to the plane KS and including the tangent line Cp between the projected image plane Sm and the exposure plane Sp is defined as the reference plane HP. It is assumed that the reference plane HP is parallel to the XY plane, and the reference plane HP moves at a virtual moving velocity V (constant velocity) in the X direction. The movement speed V coincides with the moving speed (main speed) in the peripheral direction of the projection image plane Sm and the exposure surface Sp. The exposure area (projection area PA) of the present embodiment is configured such that the tangent line Cp between the projection top surface Sm and the exposure surface Sp is centered in the direction parallel to the reference plane HP and the width . That is, the exposure area (projection area PA) is a distance from the tangent line Cp between the projection top surface Sm and the exposure surface Sp in the + X direction and the -X direction in the moving direction of the reference plane HP, A It is an area including up to the moved position.

Since the projected image plane Sm rotates on the plane with the radius of curvature Rm at an angular velocity? M, a specific point on the projected image plane Sm existing on the tangent line Cp after the elapse of the time t is expressed by? M = t. Therefore, the specific point is located at the point Cp1 shifted by Xm = Rm sin (? M) in the + X direction on the reference plane HP. On the other hand, when the above-mentioned specific point existing on the tangent line Cp linearly moves at the moving speed V along the reference plane HP, the specified point is shifted to the point Cp0 shifted by V · t in the + Located. Therefore, the shift amount between the movement amount in the X direction when the specific point on the tangent line Cp moves along the projected image plane Sm after the elapse of the time t and the movement amount in the X direction when the linear point moves along the reference plane HP ? 1 = V? T-Xm = V? T-Rm? Sin (? M).

Likewise, since the exposure surface Sp rotates the surface on the surface having the radius of curvature Rp by? P, the specific point on the exposure surface Sp existing on the tangent line Cp can be detected at time t After elapsed time, it rotates by? P =? P 占 t. Therefore, the specific point on the exposure surface Sp is located at the point Cp2 shifted by Xp = Rp-sin (? P) in the + X direction. Therefore, the displacement amount between the movement amount in the X direction when the specific point on the tangent line Cp moves along the exposure surface Sp after the elapse of the time t and the movement amount in the X direction when the linear point moves along the reference plane HP ? 2 = V? T-Xp = V? T-Rp? Sin (? P). The shift amounts? 1 and? 2 are also referred to as projection errors when a point on the cylindrical surface is projected on a plane (reference plane HP). 5, in the present embodiment, in the projection area PA of the exposure width 2A shown in Fig. 7, the projection image of the pattern of the mask M is projected in the telecentric state on the exposure surface Sp). That is, in the XZ plane, each point on the projected image plane Sm is projected onto the exposure surface Sp along a line parallel to the plane KS (a line perpendicular to the reference plane HP). Therefore, the point Cp1 (position Xm) on the projection image surface Sm corresponding to the point Cp0 on the reference plane HP is projected on the same X-direction position Xm on the exposure surface Sp, And a position Xp of the point Cp2 on the exposure surface Sp corresponding to Cp0. The main reason for this discrepancy is that the radius Rm of the projected image surface Sm is different from the radius Rp of the exposure surface Sp.

In this way, when there is a difference between the radius Rm and the radius Rp, the difference amount? (=?) Between the displacement amount? 1 of the point Cp1 on the projection image surface Sm shown in FIG. 7 and the displacement amount? 2 of the point Cp2 on the exposure surface Sp, DELTA 1 - DELTA 2) gradually changes in accordance with the position in the X direction within the exposure width 2A. Thus, by quantifying (simulating) the difference amount DELTA of the shift caused by the radial difference Rm / Rp between the projected image plane Sm and the exposure plane Sp within the exposure width 2A, The optimum exposure conditions can be set in consideration of the quality of the pattern (projection quality) to be projected and exposed. The amount of difference DELTA is also referred to as a projection error when the cylindrical projection surface Sm is transferred onto the cylindrical exposure surface Sp.

8A is a graph showing the relation between the main velocity Vm and the exposure surface Sp of the projection image surface Sm with the radius Rm of the projection top surface Sm being 125 mm and the radius Rp of the exposure surface Sp being 200 mm, 2 and the difference amount DELTA within the range of +/- 10 mm as the exposure width 2A in a state in which the main speed . 8A, the horizontal axis represents the coordinate position [mm] on the reference plane HP with the origin of the center of the projection area PA (the position through which the surface KS passes), and the vertical axis represents the calculated shift amounts? 1 and? 2, DELTA [mu m]. 8A, when the main speed Vm of the projection image surface Sm coincides with the main speed Vp of the exposure surface Sp, the absolute value of the difference amount DELTA is set so that the projection image surface Sm and the exposure surface Sp Becomes gradually larger as it moves away from the position (origin) of the tangent line Cp which is tangential to the + X direction. For example, in order to faithfully transfer a pattern having a minimum line width (ship width) of several mu m to 10 mu m, when the absolute value of the difference amount DELTA is suppressed to about 1 mu m, PA needs to be not more than ± 6 mm (12 mm in width).

The main velocity Vm of the projected image plane Sm is obtained by multiplying the projection magnification? Of the projection optical system PL by Vm = beta. &amp;bull; Vf. For example, when the projection magnification? Is equal to 1.00 (equal magnification), the main speed Vf of the pattern surface of the mask M and the main speed Vp of the exposure surface Sp are set to be the same and the projection magnification? ), 2? Vf = Vp is set. In general, as shown in Fig. 8A, the main speeds of the projected image surface Sm and the exposure surface Sp are set to Vm = Vp, so that the relationship of? (Vf = Vp) The rotation angular velocity between the cylindrical drum 21 holding the substrate M and the substrate support drum 25 supporting the substrate P is precisely controlled. However, a slight difference is given to the main speed Vm of the projection image surface Sm and the main speed Vp of the exposure surface Sp to see how the difference amount? In FIG. 8A changes as shown in FIG. By providing a slight difference between the main speed Vm and the main speed Vp, the usable exposure width 2A can be expanded in a state in which the absolute value of the differential amount DELTA is suppressed to be small. The main speed Vp of the exposure surface Sp is set to be relatively higher than the main speed Vm of the projection top surface Sm under the condition that the radius Rp of the exposure surface Sp is larger than the radius Rm of the projection top surface Sm Lowered. Concretely, the main speed Vp of the exposure surface Sp is not changed, and the main surface of the projection image surface Sm is set to be slightly higher than the moving speed V of the reference surface HP shown in Fig. Only the rotational angular velocity omega m on the side (mask M) side is slightly changed. The angular velocity after the change is? M ', and the rotation angle of the projected image plane Sm after the elapse of time t is? M'. When calculating the shift amount? 1 by making the main speed Vm of the projected image surface Sm slightly higher than the moving speed V, the curve of the shift amount? 1 in FIG. 8A shows a slope of negative Change.

Therefore, in the present embodiment, by using such a tendency, the main velocity Vm (the angular velocity Vm) of the projected image plane Sm is set such that the difference amount DELTA is zero at two symmetric positions with the origin 0 therebetween at the position within the exposure width 2A ? m '). 8B is a graph showing calculation results of the difference amount DELTA 1 and DELTA 2 obtained after changing the main speed Vm of the projection image surface Sm, and the definitions of the vertical and horizontal axes are the same as those in Fig. 8A. 8B, the graph of the shift amount? 2 is the same as that shown in FIG. 8A. However, the graph of the shift amount? 1 is the same as the graph of FIG. 8B except that the shift position? Sm) of the angular velocity? M '(? M'). As a result, the differential amount Δ changes to a negative slope within a range of ± 4 mm in a range of the exposure width, and to a positive slope in a range outside the range of ± 4 mm. , And becomes zero at each position of -6.4 mm.

When the allowable range of the difference amount DELTA is, for example, about +/- 1 mu m, the exposure width under the condition of FIG. 8A is +/- 6 mm, but the exposure width under the condition of FIG. All. This means that the dimension in the scanning exposure direction (circumferential direction) of the projection area PA can be increased (by about 33%) from 12 mm to 16 mm, and if the illuminance of the illumination light for exposure is the same, The substrate P can be conveyed at a speed of about 33% without dropping, and productivity can be improved. The reason why the dimension of the projection area PA can be increased by 33% means that the amount of exposure given to the substrate P can be increased correspondingly, and the exposure conditions can be relaxed. The exposure apparatus U3 measures the rotation of the cylindrical drum 21 holding the mask M and the rotation of the substrate support drum 25 supporting the substrate P by a high resolution rotary encoder So that the rotation control with high precision can be performed while causing a slight difference in the rotation speed.

When the main speed Vp of the exposure surface Sp is made equal to the moving speed V of the reference surface HP and the main speed Vm of the projected image surface Sm is made slightly higher than the moving speed V of the reference surface HP, The indicated difference amount Δ changes as shown in FIG. 8C. 8C shows the rate of change of the main speed Vm of the projected image plane Sm with respect to the main speed Vp (= V) of the exposure surface Sp with respect to only the graph of the amount of difference? ) / Vp]% from 0% to + 0.01%, respectively. 8C is the same as the graph of the difference amount? In Fig. 8A. When the rate of change α = ± 0%, the main speed Vm and the main speed Vp coincide. For example, when the rate of change α = +0.02%, the main speed Vm is 0.02% to be. 8B, simulation was performed in a state in which the principal velocity Vm of the projected image plane Sm was increased by about 0.026% with respect to the reference velocity V (= Vp) of the reference plane HP. The simulation result of Fig. 8C is obtained by substituting (1 +?) -? M of Rm-sin (? M) in the equation for obtaining the shift amount? 1 with respect to the reference plane HP of the projected image plane Sm, . &Lt; / RTI &gt; Actually, when V? T is substituted by A indicating the position (mm) of the exposure width in the X direction, it is simply obtained by the following expression.

? =? 1 -? 2 = A-Rm? Sin [(1 +?) A / Rm]

As described above, when the radius Rm of the projection top surface Sm is different from the radius Rp of the exposure surface Sp, the moving speeds (the main speeds Vm and Vp) of the projection top surface Sm and the exposure surface Sp are slightly (The radius of the mask M, the sensitivity of the photosensitive layer, the transfer speed of the substrate P, the power of the light source for illumination, the dimensions of the projection area PA, etc.) at the time of scanning exposure ) Can be widened, and an exposure apparatus capable of flexibly coping with a change in a process or the like can be obtained.

Next, as shown in FIG. 8B, when a slight difference is given to the main speeds Vm and Vp of the projected image surface Sm and the exposure surface Sp, the contrast of the pattern image obtained on the exposure surface Sp Will be described with reference to Fig. 9 is a graph showing the relationship between the contrast ratio in the horizontal axis and the horizontal axis in the case of taking the position (absolute value) of the exposure width in which the origin 0 is 0 mm in FIGS. 8A and 7B and taking the contrast ratio in the vertical axis at 1.00 8A is a graph showing changes in the contrast ratio according to the position in the exposure width in the case where there is no difference in principal speed between the upper surface Sm and the exposure surface Sp (Fig. In this embodiment, the wavelength lambda of the illumination luminous flux EL1 (exposure light) is 365 nm, the numerical aperture NA of the projection optical system PL (PLM) shown in Fig. 4 is 0.0875, and the process constant k is 0.6. The maximum resolving power Rs obtained under this condition is 2.5 mu m from Rs = k (lambda / NA), so that L & S (line and space) pattern of 2.5 mu m is used for calculation.

As shown in Fig. 9, by setting the main speed Vp on the side of the larger curvature of the projection top surface Sm of the mask pattern and the exposure surface Sp on the substrate P to be slightly lower than the other main speed Vm, The range of the exposure width in which a high contrast ratio is obtained is widened. For example, when a contrast ratio of about 0.8 is required in order to maintain the quality of a pattern transferred onto the exposure surface Sp, the exposure width at a state where there is no main speed difference (Vm = Vp) is about 6 mm , The exposure width at a state where the main speed difference exists (Vm &gt; Vp) can be ensured by 8 mm or more. Further, if the contrast ratio is about 0.6, the exposure width in the state where the main speed difference exists (Vm &gt; Vp) widens to about 9.5 mm. As described above, by slightly varying the main speed Vm of the projection top surface Sm and the main speed Vp of the exposure surface Sp, the dimension of the projection area PA in the scanning exposure direction (exposure width 2A) , It is possible to perform pattern exposure in which the contrast (good quality) on the pattern to be projected is kept good. In addition, since the exposure width 2A in the scanning exposure direction of the projection area PA can be increased, the transfer speed of the substrate P can be increased or the exposure light per unit area in the projection area PA (EL2) can be lowered.

However, in the case of simulating the difference amount? Relative to the position of the exposure width while gradually changing the main speed difference Vm-Vp as shown in FIG. 8C, the projected image plane Sm (Minimum dimension) on the pattern to be transferred is preferably set to be smaller than the minimum line width (minimum dimension) on the pattern to be transferred, and the average value or the maximum value of the difference Δ in the scanning exposure direction between the exposure surface Sp on the substrate P and the exposure surface Sp on the substrate P . For example, when attention is paid to the range of exposure from 0 mm to +6 mm among the exposure widths in FIG. 8B, the average value of the difference amounts? Within the range is about -0.42 占 퐉 and the maximum value is about -0.66 占 퐉. When attention is paid to the range from the exposure range of 0 mm to +8 mm, the average value of the difference amounts? Within the range is about -0.18 占 퐉 and the maximum value is about + 1.2 占 퐉. If the minimum line width on the pattern to be transferred is set to 2.5 mu m set in the simulation of Fig. 9, the average value and the maximum value of the difference amount DELTA The minimum line width can be made smaller than 2.5 占 퐉.

As shown in FIG. 8B, the position where the difference Δ is zero within the actual exposure width (the dimension in the scanning exposure direction of the projection area PA) is at least 3 It is preferable to set the position. For example, when the projection area PA is set to the exposure width of ± 8 mm, one point in the pattern image projected in the projection area PA between the scan exposures is shifted from the position of -8 mm to +8 mm Position. In the meantime, one point in the pattern image is transferred onto the exposure surface Sp, passing through each of positions -6.4 mm, 0 mm (origin) and + 6.4 mm where the difference Δ is zero. As described above, each rotation of the cylindrical drum 21 holding the mask M and the substrate supporting drum 25 is performed so that the difference amount DELTA is zero at at least three points within the exposure width in the scanning exposure direction of the projection area PA. By precisely controlling the speed, the dimensional (line width) error in the scanning exposure direction on the pattern exposed in the projection area PA (exposure surface Sp) can be suppressed to be small, and faithful pattern transfer becomes possible .

As described above, the maximum resolving power Rs is expressed by Rs (nm) by the numerical aperture NA on the projection top surface Sm side of the projection optical system PL, the wavelength lambda of the illumination luminous flux EL2 and the process constant k = k? (? / NA). In this case, when the moving speed of the reference plane HP is V, the moving distance of the reference plane HP is x, and A is the absolute value of the exposure width, it is preferable to satisfy the following relationship.

[Equation 1]

[Equation 2]

This equation F (x) is an equation representing the difference amount? At a position x of a certain point on the reference plane HP, but the relationship between the moving velocity V of the reference plane HP and the moving distance x is not limited to that described with reference to Fig. 7 Corresponds to time t (= x / V). The exposure apparatus U3 according to the present embodiment satisfies the above-described formula, so that even if the exposure width of the effective projection area PA is increased, the exposure apparatus U3 according to the present embodiment does not deteriorate the contrast on the projected pattern, (P).

In addition, the exposure apparatus U3 according to the present embodiment can exchange the cylindrical drum 21 holding the mask M. In the case of the cylindrical mask of the reflection type, a highly reflective portion as a mask pattern and a low reflection portion (light absorption portion) can be directly formed on the outer peripheral surface of the cylindrical drum 21. [ In this case, the mask replacement is performed for each cylinder 21. At this time, the radius (diameter) of the cylindrical drum 21 of the reflection type cylindrical mask newly mounted on the exposure apparatus may be made different from the radius of the cylindrical mask mounted before replacement. This may occur in the case of changing the dimensions (such as the size of the display panel) of the device to be exposed on the substrate P or the like. 8A to 7C and 9 (simulation) on the basis of the radius of the mask pattern surface of the cylindrical drum 21 after replacement, even in such a case, The illumination width of the projection area PA to be set, the illuminance of the illumination luminous flux EL2 to be adjusted or the conveyance speed of the substrate P to be adjusted The rotational speed of the drum 25) and the like can be determined in advance. When a plurality of cylindrical drums 21 different in radius Rm, for example, in millimeter units or centimeters, are replaceably mounted, an exposure device (not shown) for supporting the rotation center axis AX1 of the cylindrical drum 21 A mechanism for adjusting the bearing portion in the Z direction is provided. When the exposure range of the projection area PA in the scanning exposure direction is changed as the parameter to be adjusted, for example, the illumination field stop 55 in FIG. 4 or the field stop 63 in the intermediate top plane P7 ). &Lt; / RTI &gt; As described above, the exposure apparatus U3 (substrate processing apparatus) can appropriately adjust the exposure conditions according to the mask M by adjusting the above various parameters, so that the mask M can be exposed appropriately.

The exposure apparatus U3 is provided with at least one of the moving speed of the substrate P by the substrate holding mechanism 12 (substrate supporting drum 25) and the width of the scanning exposure direction of the projection area PA, On the basis of a value calculated on the basis of a conditional expression defined by the relationship between the projected image surface Sm and the exposure surface Sp or a value calculated by adding measurement results such as expansion and contraction of the substrate P in the manufacturing process It is preferable to adjust it. Thereby, the exposure apparatus U3 can automatically adjust various conditions.

The exposure apparatus U3 of the present embodiment is provided on the assumption that the dimension in the width direction of all the pattern areas such as the display panel formed on the substrate P is larger than the dimension in the direction of the axis AX2 of the projection area PA Six projection optical systems PL1 to PL6 are provided so that the projection area PA by one projection optical system PL is arranged as shown in the right drawing of Fig. 3, But may be one or more than seven.

When a plurality of projection optical systems PL are arranged in the width direction of the substrate P, the amount of exposure that is integrated over the exposure width of each projection area PA at the time of scanning exposure becomes larger in the direction orthogonal to the scanning exposure direction (For example, several percent or less) in any direction (in the width direction of the substrate P).

[Second Embodiment]

Next, the exposure apparatus U3a according to the second embodiment will be described with reference to FIG. Only parts different from those of the first embodiment will be described so as to avoid overlapping description, and the same constituent elements as those of the first embodiment are denoted by the same reference numerals as those of the first embodiment. 10 is a diagram showing the entire configuration of an exposure apparatus (substrate processing apparatus) according to the second embodiment. The exposure apparatus U3 according to the first embodiment has a configuration in which the substrate P passing through the projection area is held by the cylindrical substrate supporting drum 25. The exposure apparatus U3a according to the second embodiment, And the substrate P in the form of a flat plate is held by the movable substrate supporting mechanism 12a.

In the exposure apparatus U3a according to the second embodiment, the substrate supporting mechanism 12a includes a substrate stage 102 for holding the substrate P in a planar shape, (Not shown) for scanning movement along the X direction in the in-plane (XY plane).

Since the supporting surface P2 of the substrate P in Fig. 10 is a plane substantially parallel to the XY plane, the projected luminous flux EL2 reflected by the mask M and incident on the projection optical modules PLM1 to PL6, Is set so that the principal ray of the projected luminous flux EL2 is perpendicular to the XY plane when projected onto the substrate P. [

IR2 (and IR4 and IR6) from the center point of the illumination area IR1 (and IR3 and IR5) on the mask M as viewed in the XZ plane in the second embodiment, Of the second projection area PA2 (and PA4, PA6)) from the center point of the projection area PA1 (and PA3, PA5) on the substrate P along the support surface P2 to the center point of the second projection area PA2 Is set to be substantially equal to the circumferential length.

10, the lower control device 16 controls the moving device of the substrate supporting mechanism 12 (such as a linear exposure motor for linear exposure and a fogging actuator) to drive the cylindrical drum 21 The substrate stage 102 is driven in synchronization with the rotation of the substrate stage 102. The substrate P in the present embodiment may be a flexible substrate such as a resin film or a glass plate for a liquid crystal display panel. In addition, when scanning exposure is performed by precise movement of the substrate stage 102, a structure for vacuum-attracting the substrate P to the supporting surface P2 (for example, a pin chuck system, a porous system A flat holder or the like). When the substrate P is not moved but the substrate P is flat, the substrate P is supported on the support surface P2 by a gas layer formed by an air bearing in a low friction state, (For example, a Bernoulli chuck type flat holder or the like), and a tension imparting mechanism for maintaining a flatness by applying a predetermined tension to the substrate P are provided.

Next, the relationship between the movement of the projected image plane Sm of the pattern of the mask M in the exposure apparatus U3a of the second embodiment and the movement of the exposure plane Sp of the substrate P is shown in Fig. 11 . 11 is an explanatory diagram showing an exaggerated relationship between the projected image plane Sm of the pattern of the mask M and the exposure plane Sp on the substrate P under the same conditions and definitions as in Fig.

The exposure apparatus U3a forms the projected image plane Sm of the pattern of the mask M of the cylindrical face shape by the telecentric projection optical system PL. The projected image plane Sm is also a best focus plane on which a pattern of the mask M is formed. Since the pattern surface of the mask M is also formed of a curved surface having a radius of curvature Rm, the projected image plane Sm is also a cylindrical surface having a curvature radius Rm centered on the imaginary line AX1 ' ). On the other hand, since the substrate P is held flat by the substrate stage 102, the exposure surface Sp becomes flat (straight line in the ZX plane). Therefore, the exposure surface Sp in this embodiment is a surface coinciding with the reference surface HP shown in Fig. 7. That is, the exposure surface Sp can be regarded as a surface with a curvature radius Rp of infinite (∞) or a very large surface with respect to a radius Rm of the projected image surface Sm.

The point Cp on the projected image plane Sm on which the projected image plane Sm and the exposure plane Sp are in contact with each other is rotated at an angle and is located at a point Cp1 rotated by? m =? m 占 t. Therefore, the position Xm in the direction (X direction) along the reference plane HP of the point Cp1 on the projected image plane Sm becomes Xm = Rm-sin (? M). Since the exposure surface Sp coincides with the reference surface HP, a point Cp on the exposure surface Sp on which the projected image surface Sm and the exposure surface Sp are in contact with each other is set to the X direction Is located at the point Cp0 shifted by Xp = V 占 t. 7, the shift amount? 1 in the X direction (scanning exposure direction) between the point Cp1 on the projection image surface Sm and the point Cp0 on the exposure surface Sp after the lapse of time t is? 1 = V? t-Rm-sin (&amp;thetas; m).

11 is a projection error (sin error) caused by the movement of the mask M or the projected image plane Sm at a constant velocity and the linear movement of the substrate P or the exposure surface Sp at a constant velocity . The shift amount? 1 increases gradually as it gets away from the position when the point Cp is set to zero when the point Cp is located on the center surface KS in the exposure width 2A. The pattern image of the projected image plane Sm is continuously accumulated and transferred onto the exposure surface Sp on the substrate P over the range of the exposure width 2A during the scanning exposure. However, due to the influence of the projection error of the shift amount? 1, the dimension in the scanning exposure direction on the transferred pattern has an error with respect to the dimension of the pattern on the mask M, and the transfer fidelity is lowered.

In the present embodiment, therefore, by setting the main speed of the surface having the small radius of curvature to be slightly higher than the main speed of the surface having the larger radius of curvature among the projected image surface Sm and the exposure surface Sp, The same effects as those of the first embodiment can be obtained. In the present embodiment, since the curvature radius Rp of the exposure surface Sp and the curvature radius Rm of the projection top surface Sm are Rp &quot; Rm, the moving speed V of the exposure surface Sp is relatively relatively large, The main speed Vm of the smoothing portion Sm is slightly increased.

Hereinafter, an example in which various simulations are executed by the configuration of the exposure apparatus U3a will be described with reference to Figs. 12 to 18. Fig. 12 is a graph showing a change in the amount of shift DELTA 1 due to the presence or absence of a difference between the moving speed V (equal to the main speed Vp) of the exposure surface Sp and the main speed Vm of the projection top surface Sm, 11, and the horizontal axis represents the exposure width as in Figs. 8A and 7B. In each of the simulations shown in FIG. 12 and later, the radius Rm of the mask M, that is, the radius Rm of the projected image plane Sm is set to 150 mm. 11, when the moving speed V (main speed Vp) of the exposure surface Sp is equal to the main speed Vm of the projected image surface Sm, that is, when there is no main speed difference, the allowable range of the shift amount? Is about ± 1 μm, the exposure width is in the range of about ± 5 mm.

Therefore, the angular speed of the projected image plane Sm is changed from? M to? M '(? M <? M') so that the main speed Vm of the projected image plane Sm is slightly higher than the moving speed V of the exposure surface Sp , The shift amount? 1 'changes to a negative slope in the range of the exposure width ± 4 mm around the origin 0, and to a positive slope outside the range. If the position of the exposure width at which the shift amount? 1 'is zero is located at about 6.7 mm, the exposure width at which the allowable range of the shift amount? 1' falls within about ± 1 μm is within a range of about ± 8 mm. This is because the exposure width that can be used as the scan exposure is enlarged by about 60% as compared with the case where the main speed difference is not provided.

Next, as in the case of FIG. 9, the case where the moving speed V (= the main speed Vp) of the exposure surface Sp and the main speed Vm of the projected image surface Sm coincide (Or the contrast ratio) in the case of the case in which the difference (difference in the main speed) is given.

13A is a graph showing the relationship between the numerical aperture NA on the exposure surface Sp side of the projection optical system PL of 0.0875 and the wavelength of the illumination luminous flux EL1 of 365 nm, Represents the contrast of an image obtained on the exposure surface Sp when the L &amp; S pattern having the maximum resolution Rs = 2.5 mu m formed on the projection surface Sp is projected. 13B shows the contrast of an image obtained on the exposure surface Sp when an isolated line (ISO) pattern with a maximum resolution Rs of 2.5 m obtained under the same projection condition is projected.

Even in the L &amp; S pattern of 2.5 mu m and the ISO pattern, it is preferable that the image portion (bright portion) of the image is close to 1.0 as the contrast value and the dark portion (dark portion) The contrast value is obtained by (Imax-Imin) / (Imax + Imin) by the maximum value Imax of the light intensity of the name portion and the minimum value Imin of the light intensity of the dark portion. The intensity distribution CN1 is in a state of high contrast as a whole, but the difference (amplitude) between the maximum value Imax and the minimum value Imin is small in the low state as in the intensity distribution CN2. The intensity distribution CN1 of the image shown in Figs. 13A and 12B is the contrast of a 2.5 占 퐉 L & S pattern or a still image of an ISO pattern, but in the case of scan exposure, the substrate P moves , The accumulated intensity distribution CN1, for example, is accumulated in the scanning exposure direction in accordance with the difference Δ described in FIG. 8B or the shift amount Δ1 described in FIG. 12, Resulting in a final contrast on the resulting pattern.

Next, under the projection exposure condition (Rm = 150 mm, Rp = ∞, NA = 0.0875, λ = 365 nm, k = 0.6) described in FIGS. 13A and 12B, the exposure width of the projected image of the L & Figs. 14 and 15 show the results of simulation of a change in the contrast value (contrast ratio). The abscissa of Figs. 14 and 15 represents the position of the exposure width A on the positive side, and the ordinate represents the contrast value obtained by (Imax-Imin) / (Imax + Imin) and the contrast value at the exposure width of 0 mm by 1.0 And the contrast ratio of the case. 14 shows a change in contrast in the case where there is no difference in principal speed between the moving speed V (= main speed Vp) of the exposure surface Sp and the main speed Vm of the projected image plane Sm, and Fig. The contrast change when the main speed Vm of the projected image surface Sm is slightly larger than the moving speed V (= the main speed Vp) of the exposure surface Sp is set to be a variation characteristic such as a shift amount? .

As shown in Fig. 14, when there is no main speed difference (before correction), the contrast ratio is steadily reduced from a position of 5 mm or more, although the position of the exposure width is almost constant in the range of about 4 mm from the origin 0. When the exposure width is 8 mm or more, the contrast ratio is 0.4 or less, and contrast may be insufficient in exposure to photoresist. In the simulation, the contrast value at the position 0 mm of the exposure width was about 0.934, and the contrast ratio was normalized to 1.0.

On the other hand, in the case where the main speed difference exists (after correction) as shown in Fig. 15, the contrast ratio gradually decreases from 1.0 to 0.8 in the range of 0 to 4 mm in the exposure width position, . In terms of simulation, the contrast ratio at the exposure width of 5 mm is about 0.77, and the contrast ratio at the position 7 mm is about 0.82.

By setting the main velocity Vm of the projected image plane Sm to be slightly larger than the moving velocity V (= the main velocity Vp) of the planar exposure surface Sp, the projection area PA Can be increased.

As shown in Fig. 16, the contrast ratio of the image of the ISO pattern of 2.5 mu m when there is no main speed difference (before correction) is gradually constant from 5 mm or more to 6 mm About 0.6 at position 8 mm, about 0.5 at position 9 mm, and about 0.4 at position 10 mm. The contrast ratio in Fig. 16 is a contrast value obtained on the ISO pattern of 2.5 占 퐉 (position (position)) based on the contrast value (about 0.934) of the image of the L & S pattern of 2.5 占 퐉 obtained at the exposure width position 0 mm in Fig. 0 mm to about 0.968). Therefore, the initial value (value at position 0 mm) of the contrast ratio shown in Fig. 16 becomes about 1.04.

On the contrary, in the case where the main speed difference (after correction) as shown in Fig. 17, the contrast ratio of the image pattern of the ISO pattern of 2.5 mu m is 0.9 or more in the range of the exposure width in the range of 0 to 8 mm, , But it is maintained at about 0.67 even at a position of 10 mm. As described above, by relatively increasing the peripheral speed Vm of the projected image plane Sm relatively to the moving speed V (= the peripheral speed Vp) of the planar exposure surface Sp, The exposure width 2A of the area PA can be increased.

However, a slight difference is given between the main speed Vm of the projection top surface Sm and the main speed Vp (or the linear movement speed V) of the exposure surface Sp, and the difference Δ in FIG. 8B or the deviation Δ in FIG. There is also an evaluation method that uses the relationship between the difference amount? Or the shift amount? 1 'and the resolution Rs to determine the range of the optimal exposure width 2A (or A) by obtaining the same characteristics as the amount? 1'. Hereinafter, the method will be described, but for the sake of simplicity, the difference Δ in FIG. 8B and the shift amount Δ1 'in FIG. 12 may be replaced with the upper displacement Δ.

In the evaluation method, the relationship of the average value / Rs of the phase displacement amount? Or the average value / Rs of the phase displacement amount? ² is calculated for each position of the exposure width. An example of simulating the average value / Rs of the phase displacement amount? As the evaluation value Q1 and the average value / Rs of the phase displacement amount? ² as the evaluation value Q2 will be described with reference to FIGS. 18 and 19. FIG. Fig. 18 is the same as the graph of the displacement amount? 1 'shown in Fig. 12, but the exposure width to be calculated is set within a range of 占 12 mm. In addition, the sample point on the exposure width obtained by calculating the shift amount? 1 '(the amount of phase shift?) Is 0.5 mm apart as in FIG.

The average value of the phase shift amounts? Is obtained by adding the absolute values of the shift amounts? 1 'obtained from the origin 0 mm of the exposure width to the sample point of interest. For example, the average value of the phase shift amount? At the sample point of position-10 mm is obtained by adding the absolute value of the shift amount? 1 'obtained at each sample point (21 points in FIG. 18) And dividing it by the sample points. 18, the added value of the absolute value of the shift amount? 1 'at each sample point from the position 0 mm to -10 mm is 20.86 占 퐉, and the average value divided by the sample point 21 becomes about 0.99 占 퐉. Here, the resolution Rs in the simulation is 2.09 탆, where NA = 0.0875,? = 368 nm and process constant k = 0.5. Therefore, the evaluation value Q1 (endless) at the position of the exposure width of -10 mm becomes about 0.48. When the above calculation is performed at each position (sample point) within the exposure width, the tendency of the evaluation value Q1 to change can be known.

Further, (the displacement amount Δ) the average value of the ^two, will average to a value (㎛ ²⁾ squaring the absolute value of each displacement amount Δ1 'obtained among the sample points to which attention from the origin of the exposure width 0mm added. In the case of FIG. 18, for example, the absolute value of the shift amount? 1 'at each sample point from 0 mm to -10 mm from the position is squared and added to 42.47 占 퐉 ² , and the average value divided by the sample point 21 is about 2.02 Mu m &lt; ^{2 &} gt ;. Since the resolution Rs in the simulation is 2.09 占 퐉, the evaluation value Q2 at the position of the exposure width of -10 mm is approximately 0.97 占 퐉. When the above calculation is performed at each position (sample point) in the exposure width, the change tendency of the evaluation value Q2 (占 퐉) can be known.

19 is a graph obtained by taking the evaluation values Q1 and Q2 obtained as described above on the vertical axis and taking the position of the exposure width on the horizontal axis. The evaluation value Q1 (average value of the amount of phase displacement? / Resolution Rs) changes gently as the exposure width (absolute value) increases, and becomes approximately 1.0 at a position of approximately ± 12 mm of the exposure width. This means that the average value of the amount of phase shift? At the position of 占 12 mm almost coincides with the resolving power Rs. On the other hand, the evaluation value Q2 (mean value / resolution Rs of the phase shift amount? ² ) changes in the same manner as the evaluation value Q1 in the range of the exposure width ± 8 mm, but steeply increases in the range of 8 mm or more, (Mu m) at 10 mm.

Here, with respect to the contrast change of the ISO pattern shown in Fig. 17 or the contrast change of the L &amp; S pattern shown in Fig. 15, the contrast ratio significantly decreases from the exposure width of 8 mm or more. The change in the contrast ratio obtained in Figs. 15 and 17 is the case where the resolving power Rs is 2.5 占 퐉, which is not calculated at Rs = 2.09 占 퐉, but the tendency is substantially the same. In this manner, the optimum exposure width reflecting the contrast change can also be determined by the evaluation method using the evaluation value Q1 or Q2 as an index.

In the case of the present embodiment, the formula F (x) used in the first embodiment is such that the exposure surface Sp moves in the X direction in parallel with the reference plane HP to the moving speed V (main speed Vp) , It is substituted by the following expression F '(x).

[Equation 3]

The exposure apparatus U3a according to the second embodiment shown in Fig. 10 can obtain the same effect as that of the first embodiment by applying the formula F '(x) to the formula of the first embodiment and satisfying the relationship have.

[Third embodiment]

Next, the exposure apparatus U3b of the third embodiment will be described with reference to Fig. Only parts different from those of the first and second embodiments will be described so as to avoid overlapping description, and the same constituent elements as those of the first and second embodiments are denoted by the same reference numerals as those of the first and second embodiments . 20 is a diagram showing the entire configuration of an exposure apparatus (substrate processing apparatus) according to the third embodiment. The exposure apparatus U3b according to the third embodiment uses a reflection type mask in which the light reflected by the pattern surface of the mask M becomes the projected light beam. However, in the exposure apparatus U3b according to the third embodiment, And a transmissive mask in which light transmitted through the pattern surface becomes a projected light flux is used.

In the exposure apparatus U3b of the third embodiment, the mask holding mechanism 11a includes a cylindrical drum (mask holding drum) 21a for holding the mask M, and a guide roller 93, a driving roller 94 for driving the cylindrical drum 21a, and a driving unit 96.

The cylindrical drum 21a forms a mask surface on which the illumination area IR on the mask MA is disposed. In the present embodiment, the mask surface includes a surface (hereinafter referred to as a cylindrical surface) rotated around an axis (a central axis in the shape of a cylinder) parallel to the line segment (bus line). The cylindrical surface is, for example, an outer peripheral surface of a cylinder, an outer peripheral surface of a cylinder, and the like. The cylindrical drum 21a is made of, for example, glass or quartz, and has a cylindrical shape with a constant thickness, and its outer peripheral surface (cylindrical surface) forms a mask surface. That is, in the present embodiment, the illumination area on the mask MA curves into a cylindrical surface shape having a curvature radius Rm from the center line. The central portion of the cylindrical drum 21a other than both ends in the Y-axis direction of the cylindrical drum 21a, for example, a portion overlapping the pattern of the mask M as seen from the radial direction of the mask holding drum 21a, And has light transmittance to the light flux EL1.

The mask MA is a transmissive planar sheet mask having a pattern formed by a light shielding layer such as chrome on one side of a very thin glass plate (for example, 100 to 500 mu m in thickness) And is used in a state in which it is curved along the outer circumferential surface of the cylindrical drum 21a and is wound around the outer circumferential surface. The mask MA has a pattern non-forming area where no pattern is formed, and is mounted on the cylindrical drum 21a in the pattern non-forming area. The mask MA is releasable with respect to the cylindrical drum 21a. The mask MA is wound around the cylindrical drum 21a by the transparent cylindrical mother material instead of being wound around the cylindrical drum 21a by the transparent cylindrical mother material in the same manner as the mask M of the first embodiment The mask pattern formed by the light shielding layer such as direct chromium may be formed and integrated. Also in this case, the cylindrical drum 21a functions as a holding member of the mask pattern.

The guide roller 93 and the drive roller 94 extend in the Y-axis direction parallel to the central axis of the cylindrical drum 21a. The guide roller 93 and the drive roller 94 are rotatable about an axis parallel to the central axis. The guide roller 93 and the drive roller 94 are provided so as not to contact the mask MA held by the cylindrical drum 21a. The driving roller 94 is connected to the driving portion 96. The driving roller 94 rotates the cylindrical drum 21a about the central axis by transmitting the torque supplied from the driving unit 96 to the cylindrical drum 21a.

The illumination device 13a of this embodiment includes a light source (not shown) and an illumination optical system ILa. The illumination optical system ILa has a plurality of (for example, six) illumination optical systems ILa1 to ILa6 aligned in the Y-axis direction corresponding to each of the plurality of projection optical systems PL1 to PL6. As the light source, various light sources can be used in the same manner as the above-described various illumination devices 13a. The illuminating light emitted from the light source is divided into a plurality of illuminating optical systems (ILa1 to ILa6) through the light guide member such as an optical fiber, for example, with uniform illuminance distribution.

Each of the plurality of illumination optical systems ILa1 to ILa6 includes a plurality of optical members such as a lens, an integrator optical system, a rod lens, a fly's eye lens, and the like, and is illuminated by an illumination luminous flux EL1 having a uniform illumination distribution And illuminates the illumination area IR. In the present embodiment, the plurality of illumination optical systems ILa1 to ILa6 are disposed inside the cylindrical drum 21a. Each of the plurality of illumination optical systems IL1a to ILa6 passes through the cylindrical drum 21a from the inside of the cylindrical drum 21a and passes through each illumination area on the mask MA held on the outer peripheral surface of the cylindrical drum 21a Illuminate.

The illumination device 13a guides the light emitted from the light source by the illumination optical systems ILa1 to ILa6 and irradiates the guided illumination light beam from the inside of the cylindrical drum 21a to the mask MA. The illumination device 13a illuminates a part (illumination area IR) of the mask M held by the cylindrical drum 21a with uniform brightness by the illumination luminous flux EL1. The light source may be disposed inside the cylindrical drum 21a and may be disposed outside the cylindrical drum 21a. The light source may be an apparatus (external apparatus) separate from the exposure apparatus EX.

Similarly to the exposure apparatuses U3 and U3a, the exposure apparatus U3b also detects the movement speed (main speed Vm) of the projection image surface Sm and the movement speed V (Vm) of the exposure surface Sp when using a transmission mask as a mask, , Or the main speed Vp) is adjusted (corrected) in the same manner as in the second embodiment described above, the exposure width available for scanning exposure can be increased.

[Fourth Embodiment]

Next, the exposure apparatus U3c of the fourth embodiment will be described with reference to Fig. Only parts different from those of the preceding embodiments will be described so as to avoid overlapping description, and the same constituent elements as those of the foregoing embodiments will be denoted by the same reference numerals. Fig. 21 is a diagram showing the entire configuration of an exposure apparatus (substrate processing apparatus) according to the fourth embodiment. The exposure apparatuses U3, U3a and U3b of the respective embodiments described above were configured to use a cylindrical mask M held in a rotatable cylindrical drum 21 (or 21a). In the exposure apparatus U3c of the fourth embodiment, a mask retention mechanism (not shown) having a mask stage 110 for holding a flat reflective mask MB and moving in the X direction along the XY plane during scanning exposure 11b.

In the exposure apparatus U3c according to the fourth embodiment, the mask holding mechanism 11b includes a mask stage 110 for holding a flat reflective mask MB, a mask stage 110 for holding the mask stage 110 on the center plane CL, And a moving device (not shown) for performing scanning movement along the X direction within a plane orthogonal to the scanning direction.

Since the mask surface P1 of the mask MB in Fig. 21 is a plane substantially parallel to the XY plane, the principal ray of the projected luminous flux EL2 reflected from the mask MB becomes perpendicular to the XY plane. Therefore, the principal ray of the illumination luminous flux EL1 from the illumination optical systems IL1 to IL6 for illuminating the illumination areas IR1 to IR6 on the mask MB is also incident on the XY plane through the polarizing beam splitter PBS Vertical.

When the principal ray of the projected luminous flux EL2 reflected from the mask MB is perpendicular to the XY plane, the first optical system 61 of the projection optical module PLM, The one reflecting surface P3 reflects the projected luminous flux EL2 from the polarizing beam splitter PBS and passes the reflected projected luminous flux EL2 through the first lens group 71 to form the first concave mirror 72 As shown in Fig. Specifically, the first reflecting surface P3 of the first biasing member 70 is set at substantially 45 degrees with respect to the second optical axis BX2 (XY plane).

IR2 (and IR4 and IR6) from the center point of the illumination area IR1 (and IR3 and IR5) on the mask MB as seen in the XZ plane in the fourth embodiment, To the central point of the substrate support drum 25 is the distance from the center point of the projection area PA1 (and PA3, PA5) on the substrate P along the support surface P2 of the substrate support drum 25 to the second projection area PA2 (And PA4, PA6)) of the center of gravity.

In the exposure apparatus U3c in Fig. 21, the lower control device 16 controls the moving device (the scanning exposure linear motor or the fine moving actuator, etc.) of the mask holding mechanism 11 and rotates the substrate supporting drum 25 The mask stage 110 is driven. In the exposure apparatus U3c in Fig. 21, it is necessary to carry out scanning exposure by synchronous movement in the + X direction of the mask MB, and then perform an operation (rewind) to return the mask MB to the initial position in the -X direction . Therefore, when the substrate P is continuously conveyed at a constant speed (main speed Vp) by continuously rotating the substrate supporting drum 25 at a constant speed, pattern exposure is performed on the substrate P during the rewinding operation of the mask MB And the panel pattern is spatially separated (spaced apart) with respect to the conveying direction of the substrate P. In practice, however, since the velocity of the substrate P (main velocity Vp) and the velocity of the mask MB at the time of scanning exposure are assumed to be 50 to 100 mm / s, when the mask MB is rewound, It is possible to narrow the margins in the transport direction between the panel patterns formed on the substrate P by driving the substrate 110 at the maximum speed of, for example, 500 to 1000 mm / s.

Next, the relationship between the projected image plane Sm of the pattern of the mask in the exposure apparatus U3c of the fourth embodiment and the exposure plane Sp on the substrate P will be described with reference to Fig. 22 shows the relationship between the movement of the projection top surface Sm of the pattern of the mask and the movement of the exposure surface Sp of the substrate P. The relationship between the projection top surface Sm and the exposure surface Sp described above with reference to Fig. To the opposite of the relationship. That is, in FIG. 22, a pattern image formed on a projected image plane Sm having a planar shape (infinite radius of curvature) is transferred onto an exposure surface Sp having a radius of curvature Rp.

Here, since the mask M is flat, the projected image plane Sm (the best focus plane) is also flat. Therefore, the projected image plane Sm in FIG. 22 corresponds to the reference plane HP moving at the velocity V shown in FIG. On the other hand, the exposure surface Sp on the substrate P becomes a cylindrical surface having a radius of curvature Rp (an arc in the ZX plane), similarly to the case shown in Fig.

In the present embodiment, when the angular speed of the substrate holding drum 25 (exposure surface Sp) is assumed to be? P, it is assumed that the projected image plane Sm and the exposure surface Sp are in contact with each other at the position of the surface KS , And the position Xp in the X direction of the point Cp2 moved after a lapse of time t along the exposure surface Sp with the contact Cp of the radius Rp is obtained by Xp = Rp-sin (? P? T). Here,? P 占 t is the rotation angle? P of the exposure surface Sp after the lapse of time t from the contact point Cp as the origin. The position Xm of the point Cp0 at which the contact point Cp between the projection top surface Sm and the exposure surface Sp has moved after elapse of time t from the origin along the flat projected image surface Sm is Xm = A projection error (displacement amount or an amount of upward displacement) is generated between the projected image plane Sm and the exposure surface Sp, as in the previous embodiments.

The shift amount? 2 is obtained as? 2 = Xm-Xp, and? 2 = V? T-Rp? Sin (? P), where the projection error (displacement amount or the upward displacement amount) The characteristic of the shift amount? 2 is the same as the graph of the shift amount? 2 in FIG. 8A and gives a slight difference to the moving speed V of the projection top surface Sm and the main speed Vp of the exposure surface Sp, It is possible to enlarge the exposure width of the projection area PA that can be used at the time of scanning exposure similarly to the embodiment. For this purpose, it is necessary to relatively increase the speed (main speed) of the surface of the projected image surface Sm and the surface of the exposure surface Sp with a small radius of curvature relatively. In the present embodiment, the speed V (the main speed Vm) of the projected image surface Sm is set to be smaller than the main speed Vp of the exposure surface Sp by, for example, ) Is set to be slightly smaller than a reference speed V that is determined based on the projection magnification?.

Here, the formula of F (x) of the first embodiment is replaced with the following formula of F '(x) in the case of the exposure apparatus U3c of the present embodiment.

[Equation 4]

Here, the exposure apparatus U3c can obtain the same effects as those of the above-described embodiments by applying the formula F '(x) to the formula of the first embodiment and satisfying the relationship.

In the exposure apparatus according to the present embodiment, one of the mask holding mechanism and the substrate holding mechanism which is held by the curved surface is the first supporting member, and the one supporting the curved surface or the plane becomes the second supporting member.

As described above, in each of the embodiments, the cylindrical or planar mask M is used. However, it is also possible to control the DMD (digital mirror device) or the SLM (spatial light modulation element) The same effect can be obtained even in a maskless exposure method in which the light distribution is projected onto the exposure surface Sp via a projection optical system (which may include a microlens array).

In each of the embodiments, the curvature radii of the projected image surface Sm of the pattern and the exposure surface Sp of the substrate P are compared, and at the time of scanning exposure, the surface Sm and the surface Sp have a smaller radius of curvature The main speed (or the linear movement speed) of the surface Sm and the surface Sp on the side having a larger radius of curvature is made relatively small, thereby increasing the exposure width available for the scanning exposure . The degree of the slight difference in the relative main speed (or linear movement speed) to some extent can be changed according to the phase shift amount? (Difference amount?, Shift amounts? 1 and? 2) and resolution Rs. For example, in the evaluation method using the evaluation values Q1 and Q2 shown in Fig. 19, the resolving power Rs is 2.09 mu m, which is determined by the numerical aperture NA of the projection optical system PL, the exposure wavelength lambda, and the process constant k . The minimum dimension (line width) of the pattern exposed on the substrate P is determined by the pattern formed on the mask M and the projection magnification?. If the minimum actual dimension (actual line width) may be 5 占 퐉 in the display panel pattern to be formed on the substrate P, the value of the actual line width is set as the resolution Rs, The main speed difference (rate of change [alpha] or the like) is obtained. That is, the rate of change? Of the main speed difference for enlarging the exposure width is determined according to the resolution Rs determined by the configuration (NA,?) Of the exposure apparatus or the minimum dimension of the pattern to be transferred on the substrate P .

As described above, the following scanning exposure method is performed by using the exposure apparatus shown in each of the embodiments. That is, a pattern formed on one surface of a mask M or MB curved in a cylindrical shape with a predetermined radius of curvature is transferred onto a flexible substrate P (P) supported in a cylindrical or planar manner via a projection optical system PL Along the surface Sp of the substrate supported in a cylindrical shape or a planar shape while moving the mask M at a predetermined speed along one side of the curved surface of the mask M, And a projection optical system for projecting a pattern image of the pattern by the projection optical system onto the substrate so that the projection image of the pattern by the projection optical system is formed in the best focus state, Assuming that the radius of curvature of the surface (exposure surface) Sp of the substrate P supported with the radius Rm (including Rm = ∞) or the cylindrical or planar shape is Rp (including Rm = ∞) , MB), the moving speed on the pattern moving along the projected image plane Sm Vm> Vp when Vm is a predetermined speed along the surface (exposure surface) Sp of the substrate P, Vm> Vp when Rm <Rp, and Vm <Vp when Rm> Rp do.

[Fifth Embodiment]

23 is a view showing the entire configuration of an exposure apparatus according to the fifth embodiment. The processing unit U3d corresponds to the processing unit U3 shown in Figs. 1 and 2. Hereinafter, the processing apparatus U3d will be referred to as an exposure apparatus U3d. The exposure apparatus U3d has a mechanism for exchanging the mask M. Since the exposure apparatus U3d has the same structure as that of the exposure apparatus U3 described above, a description of the common structure is omitted as a general rule.

The exposure apparatus U3d is provided with a mask holding mechanism 11, a substrate holding mechanism 12, a light source (not shown), and the like, in addition to the driving rollers R4 to R6, the edge position controller EPC3 and the alignment microscopes AM1 and AM2. An optical system (illumination system) IL, a projection optical system PL, and a sub-controller 16.

The subordinate control device 16 controls each section of the exposure apparatus U3d to execute processing on each section. The lower control device 16 may be part or all of the upper control device 5 of the device manufacturing system 1. [ The lower control device 16 may be controlled by the higher control device 5 and may be a device separate from the higher control device 5. [ The subordinate control device 16 includes, for example, a computer. In the present embodiment, the subordinate control device 16 reads out information from a mask (not shown) from an information storage unit (e.g., a bar code, a magnetic storage medium or an IC tag capable of storing information) M), and a measuring device 18 for measuring the shape, size, and mounting position of the mask M, and the like.

In the mask holding mechanism 11, the mask M of the cylindrical body (the mask pattern surface by the high-reflectance portion and the low-reflection portion) is held by the mask holding drum 21. However, This is the same as the one embodiment. In the present embodiment, when the mask M or the cylindrical mask is used, not only the mask M but also the mask holding drum 21 (the mask M and the mask holding drum 21) And the like).

The substrate supporting mechanism 12 supports the substrate P exposed by the light from the pattern of the mask M irradiated by the illumination light along a curved surface or a plane. The substrate supporting drum 25 is formed in a cylindrical shape having an outer circumferential surface (circumferential surface) having a radius of curvature Rfa centering on a second axis AX2 extending in the Y direction. Here, the first axis AX1 and the second axis AX2 are parallel to each other, and the plane including the first axis AX1 and the second axis AX2 and parallel to them is the center plane CL ). The center plane CL is a plane defined by two straight lines (in this example, the first axis AX1 and the second axis AX2). A part of the circumferential surface of the substrate supporting drum 25 is a supporting surface P2 for supporting the substrate P. [ That is, the substrate support drum 25 supports and supports the substrate P by winding the substrate P on the support surface P2. As described above, the substrate supporting drum 25 has a curved surface (outer peripheral surface) that curves from a second axis AX as a predetermined axis to a predetermined radius (radius of curvature Rfa), and a part of the substrate P is wound on the outer peripheral surface, And rotates about the two axes AX2. The second driving section 26 is connected to the lower control device 16 and rotates the substrate supporting drum 25 about the second axis AX2 as a rotation center axis.

The pair of air / turn bars ATB1 and ATB2 are provided on the upstream side and the downstream side, respectively, of the substrate P in the carrying direction with the substrate supporting drum 25 interposed therebetween. The pair of air / turn bars ATB1 and ATB2 is provided on the surface side of the substrate P and is disposed on the lower side of the support surface P2 of the substrate supporting drum 25 in the vertical direction (Z direction) . The pair of guide rollers 27 and 28 are provided on the upstream side and the downstream side of the substrate P in the carrying direction with a pair of air / turn bars ATB1 and ATB2 interposed therebetween. The pair of guide rollers 27 and 28 guides the substrate P conveyed from the driving roller R4 by one of the guide rollers 27 to the air turn bar ATB1, 28 guides the substrate P conveyed from the air / turn bar ATB2 to the driving roller R5.

The substrate support mechanism 12 guides the substrate P conveyed from the driving roller R4 to the air turn bar ATB1 by the guide roller 27 and the substrate P The substrate P is introduced into the substrate supporting drum 25. Then, The substrate supporting mechanism 12 rotates the substrate supporting drum 25 by the second driving unit 26 to rotate the substrate P introduced into the substrate supporting drum 25 toward the supporting surface of the substrate supporting drum 25. [ And is transported toward the air / turn bar ATB2, while being supported at the second stage P2. The substrate support mechanism 12 guides the substrate P conveyed to the air turn bar ATB2 to the guide rollers 28 by the air turn bar ATB2, P to the drive roller R5.

At this time, the lower control device 16 connected to the first driving part 22 and the second driving part 26 is configured to synchronously rotate the mask holding drum 21 and the substrate supporting drum 25 at a predetermined rotation speed ratio The surface of the substrate P wound on the support surface P2 of the substrate support drum 25 (the surface curved along the circumferential surface) of the mask P formed on the mask surface P1 of the mask M And is repeatedly projected and exposed.

As shown in Fig. 2, the exposure apparatus U3d is provided with alignment microscopes GS1 and GS2 outside the outer peripheral surface of the mask M for detecting alignment marks or the like formed in advance on the mask M. As shown in Fig. The exposure apparatus U3d has encoder heads EH1 and EH2 for detecting the mask M and the rotation angle of the mask holding drum 21 and the like. These are arranged along the circumferential direction of the mask M (or the mask holding drum 21). The encoder heads EH1 and EH2 are attached to both ends of the mask holding drum 21 in the direction of the first axis AX1 and are arranged at the same positions together with the mask holding drum 21 about the first axis AX1 A scale (lattice pattern formed by engraving at a constant pitch in the circumferential direction) provided on the outer peripheral surface of the rotating scale disc SD is read. In addition, the exposure apparatus U3d measures minute displacements in the radial direction of the outer peripheral surface (mask surface P1) of the rotating mask M and detects a misalignment of the mask surface P1 with respect to the projection optical system PL (AFM) for detecting a foreign substance on the mask surface P1 and a foreign substance inspection device (CD) for detecting foreign substances adhering on the mask surface P1 can be provided. These can be disposed at arbitrary azimuths around the outer circumferential surface of the mask M. However, it is preferable to provide the space for moving the mask M in the direction of avoiding the removal of the mask M.

The scale read position of the encoder head EH1 is set such that the center position in the circumferential direction of the odd-numbered illumination regions IR1, IR3, and IR5 on the mask M in the XZ plane orthogonal to the first axis AX1 The scale reading position of the encoder head EH2 is set so as to coincide with the intersection Q1 in Fig. 5 or Fig. 7 in the circumferential direction of the even numbered illumination regions IR2, IR4, IR6 on the mask M As shown in Fig. The scale measured by the encoder heads EH1 and EH2 may be formed on the outer peripheral surface of both ends of the mask holding drum 21 (mask M) together with the mask pattern.

In addition to the alignment microscopes AM1 and AM2 for detecting marks and the like on the substrate P, the exposure apparatus U3d includes encoder heads EN1, EN2, EN3 and EN4 for detecting the rotation angle of the substrate support drum 25, ). These are arranged along the circumferential direction of the substrate supporting drum 25. [ The encoder heads EN1, EN2, EN3 and EN4 are mounted at both ends in the direction of the second axis AX2 of the substrate supporting drum 25, for example, AX2 in the circumferential direction of the substrate support drum 25 or on the outer peripheral surface of both ends of the substrate support drum 25 in the direction of the second axis AX2 of the substrate support drum 25 ).

The scale reading position of the encoder head EN1 is provided so as to coincide with the position in the circumferential direction of the observation field of view of the alignment microscope AM1 on the XZ plane orthogonal to the second axis AX2, Is set so as to coincide with the position in the circumferential direction of the observation field of view of the alignment microscope AM2 on the XZ plane. Similarly, the scale reading position of the encoder head EN2 is set so as to coincide with the center position in the circumferential direction of the odd-numbered projection areas PA1, PA3, PA5 on the substrate P, and the scale reading of the encoder head EN3 The positions are set so as to coincide with the center positions in the circumferential direction of the even-numbered projection areas PA2, PA4, and PA6 on the substrate P in the XZ plane.

2, the exposure apparatus U3d is provided with an exchange mechanism 150 for exchanging the mask M. The exchange mechanism 150 is configured such that the mask M held by the exposure apparatus U3d is replaced with another mask M having the same radius of curvature Rm or replaced with another mask M having a different radius of curvature Rm can do. The exchange mechanism 150 may be configured to remove only the mask M from the mask holding drum 21 and exchange the mask M for each mask holding drum 21, May be removed from the exposure apparatus U3d and exchanged. The exchange mechanism 150 can remove the mask M from the exposure apparatus U3d and replace the mask M for each mask holding drum 21. In the case of replacing the mask M with another mask M having a radius of curvature Rm, Even when the mask M and the mask holding drum 21 are integrally formed, the exchange mechanism 150 exchanges both of them. The exchange mechanism 150 may be any structure as long as the assembly of the mask M or the mask M and the mask holding drum 21 can be attached to the exposure apparatus U3d and removed from the exposure apparatus U3d .

The exposure apparatus U3d includes the exchange mechanism 150 to automatically mount the mask M having a different diameter and expose the mask pattern on the substrate P. [ Therefore, in the device manufacturing system 1 including the exposure apparatus U3d, a mask M having an appropriate diameter can be used according to the dimensions of a device (display panel) to be manufactured. As a result, the device manufacturing system 1 can suppress the occurrence of an unused blank portion of the substrate P, thereby suppressing the waste of the substrate P, and reducing the manufacturing cost of the device. As described above, since the exposure apparatus U3d including the exchange mechanism 150 has a great degree of freedom in selecting the dimensions of the device (display panel) manufactured by the device manufacturing system 1, There is an advantage that a display panel of another inch size can be efficiently manufactured without requiring facility investment.

The curvature of the mask surface P1 and the position in the Z direction of the first axis AX1 are different between the both masks M when the mask is exchanged with the mask M having a different diameter, The position of the illumination area IR on the mask M and the degree of non-telecentricity of the principal ray of the illumination luminous flux EL1 and the like, and the relationship between the mask EL1, the mask M and the projected luminous flux EL2, The positional relationship between the different masks M or between the encoder heads EH1 and EH2 and the scale original SD may be different.

Therefore, when the mask M of the exposure apparatus U3d is replaced with a mask M having a different diameter, an image of the mask pattern formed on the mask surface P1 of the mask M is applied to the substrate P In the case of the multi-lens system, the mask pattern shown in each of the plurality of projection areas PA1 to PA6 is connected with the associated mechanism in the exposure apparatus U3d and the mask To be adjusted.

In the present embodiment, when the masks M having different diameters are exchanged, for example, the lower control unit 16 is used as an adjustment control unit (adjusting unit), and each part of the exposure apparatus U3d, specifically, Adjustment is made such as changing the position of at least a part of the optical member constituting the optical system IL or the projection optical system PL or changing a part of the optical member to a member having another characteristic. By doing so, after the replacement of the mask M, the exposure apparatus U3d can appropriately and satisfactorily expose the substrate P to light. That is, the exposure apparatus U3d can appropriately and satisfactorily realize exposure with a large degree of freedom with respect to the size of the device, that is, exposure using a mask M having a different diameter. Next, an outline of a procedure for replacing the mask M used by the exposure apparatus U3d with another mask M having a different diameter or a different mask M having a different diameter and a specific example of adjustment of the exposure apparatus U3d An example will be described.

Fig. 24 is a flowchart showing a procedure for replacing the mask used by the exposure apparatus with another mask. Fig. Fig. 25 is a diagram showing the relationship between the position of the mask-side field-of-view region of the odd-numbered first projection optical system and the position of the mask-side field-of-view region of the even-numbered second projection optical system. 26 is a perspective view showing a mask having an information storage section storing information of the mask on its surface. 27 is a schematic diagram of an exposure condition setting table in which exposure conditions are described.

When the mask M used by the exposure apparatus U3d is replaced with a mask M of a different diameter, in the step S101, the lower control unit 16 shown in Fig. 23 starts the replacement operation of the mask M do. Specifically, the lower control device 16 drives the switching mechanism 150 to detach the mask M mounted on the current exposure apparatus U3d, and then drives the switching mechanism 150 to switch the position The mask M is mounted on the exposure apparatus U3d. In this exchange, the exchange mechanism 150 separates the mask holding drum 21 having the mask M for each shaft serving as the first axis AX1 and separates the mask M and the mask holding drum 21 having different diameters 21 are mounted on the exposure apparatus U3d. At this time, when the original scale SD is mounted on both ends of the mask holding drum 21 coaxially with the first axis AX1, it is preferable to exchange the scale original SD for each scale original SD.

In the present embodiment, when the mask M is replaced with a mask M having a different diameter, the mask M is moved to the position where the mask M is held on the mask holding drum 21 based on the diameter of the mask M (mask surface P1) The shaft support position in the Z axis direction of the first axis AX1 as the rotation center axis is changed. Therefore, the exposure apparatus U3d has a mechanism capable of moving the bearing apparatus that rotatably supports the mask holding drum 21 in the Z-axis direction.

The bearing device includes bearings (such as ball bearings, contact bearings such as needle bearings, air bearings or the like) for rotatably and shafting each of the shafts serving as the first shaft AX1 protruding from both ends of the mask holding drum 21 Non-contact type). The contact type bearing includes an inner ring fixed to the shaft of the mask holding drum 21, an outer ring fixed to the main body of the exposure apparatus U3d, and an outer ring fixed to the inner ring and the outer ring Or a needle or needle.

In order to exchange smooth masks, the outer ring of the contact bearing is removed from the bearing device on the body side of the exposure apparatus U3d in a state where both the inner ring and the outer ring of the contact type bearing are mounted on the shaft side of the mask holding drum 21 Structure. The bearing device on the main body side of the exposure apparatus U3d has a Z drive for adjusting the tilt in the YZ plane so that the first axis AX1 (shaft) is parallel to the second axis AX2 (Y axis) And an X drive mechanism for adjusting the inclination in the XY plane so that the first axis AX1 (shaft) is also parallel to the center plane CL.

25 shows a state in which the mask M held by the mask holding drum 21 is replaced with a mask Ma held by the mask holding drum 21a whose diameter is smaller than these. The mask M has a radius of curvature Rm, and the mask Ma has a radius of curvature Rma (Rma &lt; Rm). IRa in FIG. 25 is a view area on the side of the mask M of the first projection optical system (the first projection optical system PL1, the third projection optical system PL3 and the fifth projection optical system PL5 shown in FIG. 23) The illumination luminous flux EL1 from the optical system IL is equivalent to the odd-numbered illumination regions IR1, IR3 and IR5 irradiated to the mask M, and IRb is the second projection optical system The illumination light flux EL1 from the illumination optical system IL on the side of the mask M of the projection optical system PL2, the fourth projection optical system PL4 and the sixth projection optical system PL6) (Corresponding to even-numbered illumination regions IR2, IR4, and IR6 to be irradiated).

In the present embodiment, before and after the mask M is exchanged for the mask Ma, the position of the first projection optical system IRa in the Z-axis direction and the position of the second projection optical system in the Z- It is preferable that the position of the light source IRb is not changed. The Z axis direction is a direction in which the axis of rotation (first axis AX) of the mask M (mask holding drum 21) and the rotation axis of the substrate supporting drum 25 (second axis AX2) Are orthogonal to both, and are along the center plane CL. The adjustment of the illumination optical system IL and the projection optical system PL and the adjustment of the illumination optical system PL can be performed by preventing the spatial arrangement relationship between the viewing area IRa and the viewing area IRb in the Z axis direction from changing before and after the replacement of the mask M. [ It is possible to minimize the position adjustment of the various measuring instruments (the encoder heads EH1 and EH2, the alignment microscopes GS1 and GS2 and the like) and the change of the parts related to these.

The present embodiment assumes a multi-lens system as shown in Fig. 23, but it is also possible to project a pattern in the illumination area IR set at one place in the circumferential direction of the outer peripheral surface of the mask M into the projection area PA In the case of an exposure apparatus in which a single or a plurality of projection optical systems are arranged in the Y direction, it is preferable to arrange the centers of the circumferential directions of the illumination area IR and the projection area PA on the center plane CL . In such an exposure apparatus, when the mask M having a radius (radius of curvature) Rm is replaced with a cylindrical mask Ma having a radius Rma (Rma <Rm), the rotation center (shaft) And the bearing device is driven to be Z-driven so as to be shifted by the amount of the vehicle Rma-Rm.

However, in the multi-lens system of the present embodiment, the odd-numbered field of view (IRa) of the projection optical system (odd-numbered projection area PA and conjugate area (The object surface) of the even projection area PA and the view field IRb of the even-numbered projection optical system on the other side (the water surface in conjugation with the even projection area PA) , Good focus accuracy (or good joint positional accuracy) may not be obtained depending on the degree of the radial difference even when the mask Ma is moved in the Z direction. Therefore, in the present embodiment, the outer circumferential surface of the cylindrical mask to be exchanged is set so that the outer peripheral surface of the cylindrical mask can be accurately matched to both the view area IRa (water surface) of the odd-numbered projection optical system and the view area IRb Z drive the bearing device.

In the above-described embodiment, in the exposure apparatus in which the view area IRa of the odd-numbered projection optical systems PL1, PL3, and PL5 and the view area IRb of the even-numbered projection optical systems PL2, PL4, The position in the Z direction of the cylindrical mask can be changed in accordance with the diameter of the cylindrical mask to be mounted so that the position (each direction of XYZ) does not change. By not changing the positions of the visual areas IRa and IRb in this way, there is an advantage that the number of change points and adjustment points on the apparatus side for the cylindrical mask having different diameters are minimized. However, in such a case, a driving system such as a motor for rotating the cylindrical mask and an actuator for fine moving in the X, Y, and Z directions may also be moved in the Z direction as a whole, thereby possibly impairing the stability of the driving system.

Therefore, in order to obtain the advantage that the stability of the driving system can be maintained, the Z position (or X position) of the rotation center (first axis AX1, shaft) of the cylindrical mask in the exposure apparatus is not changed, It is okay to install a cylindrical mask. In this case, in addition to the advantage of being able to maintain the stability of the drive system, there is obtained a characteristic effect that only a hollow cylindrical mask (radius of the outer circumferential surface is different) to be mounted on the outer side with respect to the rotational axis of constant diameter can be obtained. In order to cope with this, on the side of the exposure apparatus, adjustment of the focus position with respect to the cylindrical mask of various alignment sensors (microscopes), adjustment of the focus areas IRa, IRb and the detection view of the alignment sensor The adjustment of the degree of convergence of the principal ray of the illumination luminous flux EL1 or the adjustment of the distance between the odd-numbered projection optical systems PL1, PL3, PL5 and the even-numbered projection optical systems PL2, PL4, PL6, It is preferable to make a configuration capable of adjustment and the like.

23, the mask M (and the mask holding drum 21) is taken out from the bearing device by the exchange mechanism 150, and the mask Ma, which is prepared separately, (With the mask holding drum 21a) is mounted on the bearing device. When the focus measurement device AFM and the foreign substance inspection device CD in FIG. 23 are spatially interfered with the mask or the replacement mechanism 150 at the time of taking out the mask M and at the time of mounting the mask Ma , And temporarily avoid them. 23, the projection optical system PL and the illumination optical system IL are positioned in the -Z direction and the alignment microscopes GS1 and GS2 are positioned in the -X direction with respect to the bearing device for supporting the first axis AX1, The direction in which the mask M or the mask Ma can be carried out or carried is the + Z direction or the + X direction or the 占 Y direction (the direction of the first axis AX1) with respect to the bearing apparatus .

If the mask M is exchanged for the mask Ma having a different diameter, the process proceeds to step S102. After the exchange, the lower control device 16 acquires information (replacement) of the mask Ma attached to the exposure apparatus U3d Quot;). The mask information after the replacement includes various kinds of mask parameters such as, for example, dimensions such as diameter, circumference, width, thickness, tolerance, kind of pattern, roundness of mask surface P1, eccentricity characteristic, And correction values.

These pieces of information are stored in the information storage unit 19 provided on the surface of the mask holding drum 21a, for example, as shown in Fig. The information storage unit 19 is, for example, a bar code, a hologram, or an IC tag. In the present embodiment, the information storage unit 19 is provided on the surface of the mask holding drum 21a, but it may be provided on the mask Ma together with the device pattern. In the present embodiment, the surface of the cylindrical mask is assumed to include both the surface of the mask Ma and the surface of the mask holding drum 21a. 26, the information storage unit 19 is provided on the cylindrical outer circumferential surface of the mask holding drum 21a, but may be provided on the axial end surface of the mask holding drum 21a.

The subordinate control device 16 acquires the post-exchange mask information read by the reading device 17 from the information storage 19. [ The reader 17 can be a bar code reader when the information storage unit 19 is a bar code, or an IC tag reader when it is an IC tag. The information storage unit 19 may be a part in which information is previously written in the mask Ma.

The mask information after the exchange may be included in the exposure information related to the exposure conditions. The exposure information is information required when the exposure apparatus U3d performs exposure processing on the substrate P, such as information on the substrate P to be exposed, the scanning speed of the substrate P, and the power of the illumination light flux EL1. In the present embodiment, various kinds of adjustment and correction are performed by adding mask information after the exchange to the exposure information, and recipe conditions and parameters are set on the apparatus operation at the time of exposure. The exposure information is stored in, for example, the exposure information storage table TBL shown in Fig. 27, and is stored in the storage unit of the lower control unit 16 or the storage unit of the higher control unit 5. [ The subordinate control device 16 reads the exposure information storage table TBL from the above-mentioned storage unit and acquires the mask information after the exchange. The mask information after the replacement may be inputted via the input device (keyboard, mouse, or the like) to the lower control device 16 or the higher-level control device 5. [ In this case, the subordinate control device 16 acquires the mask information after the exchange from the above-described input device. When the subordinate control device 16 acquires the mask information after the exchange, the process proceeds to step S103.

In step S103, the subordinate control device 16 collects or calculates data relating to a part necessary for adjustment of the exposure apparatus U3d and conditions necessary for adjustment according to the diameter of the mask Ma after replacement. The position of the mask M in the Z axis direction, the illumination optical system IL, the projection optical system PL, the rotation speed of the mask M, the exposure width (illumination area IR) The position or attitude of the encoder heads EH1 and EH2, and the position or attitude of the alignment microscopes GS1 and GS2. In the present embodiment, since the rotation center axis (first axis AX1a) of the mask Ma after replacement shifts from the rotation center position of the mask M before replacement to the Z axis direction, It is necessary to adjust (position shift) the mounting position of the driving source in the exposure apparatus main body in step S103 so that the output shaft of the driving source (e.g., electric motor) for driving the driving source can be connected to the shaft of the mask Ma. For this reason, the exposure apparatus U3d is mounted on a mask holding mechanism 11 which is replaceably mounted with one of a plurality of masks having different diameters and rotates around a first axis AX1 as a predetermined axis And an adjusting unit for adjusting at least the distance between the first axis AX1 and the substrate supporting mechanism in accordance with the diameter of the mask Ma. The adjustment section sets the interval between the outer peripheral surface of the mask mounted on the mask holding mechanism 11 and the substrate P supported by the substrate holding mechanism within a predetermined allowable range.

As described above, in the present embodiment, the position of the illumination field IR in the Z-axis direction is made to remain unchanged before and after the wafer is exchanged for the masks Ma having different diameters. Therefore, for example, in the step S101, the lower control device 16 is merely exchanged for the masks Ma having different diameters. When the mask information after the exchange is acquired in the step S102, The position of the illumination visual field IR in the Z-axis direction is controlled to the same position as before the exchange. The lower control device 16 acquires the information of the mask Ma from the exposure information storage table TBL before replacing the mask Ma with the mask Ma, The position of the illumination visual field IR in the Z axis direction of the mask Ma may be controlled to the same position as before the replacement with the timing of replacing the mask. Next, an example of adjustment in step S103 will be described.

Fig. 28 is a diagram schematically showing the behavior of illumination luminous flux and projected luminous flux between masks having different diameters, based on the aforementioned Fig. 5. As described above, when the position of the illumination field IR in the Z-axis direction is not changed before and after the replacement of the mask M, the mask M and the mask holding drum 21 , That is, the position in the Z-axis direction of the first axis AX1 changes. Specifically, the rotation center axis AX1a of the mask Ma having a small diameter is larger than the rotation axis AX1 of the mask M having a large diameter, (AX2).

Even if the diameter of the mask Ma after replacement is smaller than the diameter of the mask M before the replacement, as shown in Fig. 28, the center Ma of the illumination area IR on the mask Ma (mask surface P1a) It is assumed that the absolute position within the XYZ coordinate of the intersection Q1 (a unique position in the exposure apparatus) is not changed. 28, the illumination condition of the illumination luminous flux EL1 set for the mask M before replacement, that is, the main luminous flux of the illumination luminous flux EL1 in the XZ plane is set to 1 (radius of curvature radius) Rm When the illumination light flux EL1 is irradiated to the mask Ma having a small diameter while maintaining the condition such as inclination toward the point Q2 of the mask Ma, Are deviated from the parallel state, and diverge in the XZ plane, and the direction in which the principal rays of light are shifted also deviates.

Therefore, it is necessary to adjust the illumination luminous flux EL1 from the illumination optical system IL to the illumination luminous flux EL1 suitable for the mask Ma. Therefore, in step S103, the cylindrical lens 54 (see FIG. 4) of the illumination optical system IL is changed to a different power, and the state of magnification telecentricity is set such that each principal ray of the illumination luminous flux EL1, Is adjusted so as to converge toward the half of the radius Rma of the mask Ma in the XZ plane. Furthermore, the state of the axis telecentric at the intersection Q1, which is the center of the field of view IRa (illumination region IR), using the unshown angle prism is referred to as the illumination luminous flux EL1 ) Passes through the central axis AX1a of the mask Ma.

The angle of the reflected light flux from the mask Ma, that is, the projected light flux EL2a, is adjusted. In this case, the axis angle (the angle in the XZ plane of the principal ray) between the illumination luminous flux EL1 and the projection luminous flux EL2a varies depending on the diameter of the mask Ma (center position of the principal ray) The angle of the projected luminous flux EL2a can be adjusted by disposing a declination prism (a wedge-shaped prism having an incident surface and an emission surface that are not parallel to each other) between the polarizing beam splitter PBS and the mask Ma.

When the angle of only the projected luminous flux EL2a is to be adjusted, the angle of the polarizing member (for example, the first reflecting surface P3 of the first deflecting member 70, (The fourth reflecting surface P6 of the reflecting mirror 80). By doing so, when the masks Ma having different diameters are exchanged (in this example, the diameter of the mask Ma after the replacement is smaller than that before the replacement), each of the principal rays of the projected luminous flux EL2a reflected by the mask Ma, Can be made parallel to each other in the XZ plane. That is, even for the mask Ma having a different diameter after the replacement, the illumination optical system IL is configured so that the projection luminous flux EL2a reflected by the illumination area IR of the mask Ma becomes telecentric, Ma of the illumination luminous flux EL1 irradiated to the illumination area IR is adjusted.

In the case of carrying out the above-described adjustment, for example, the illumination optical module ILM of the illumination optical system IL is provided with a lens (not shown) for interchangeably installing one of a plurality of cylindrical lenses 54, An exchange mechanism is installed. It is also possible to change the lens changing mechanism to the cylindrical lens 54 of the most suitable power by a command from the lower control unit 16. [ At this time, the subordinate control device 16 changes the cylindrical lens 54 based on the information of the diameter of the mask Ma after the exchange. An actuator for adjusting the angular prism between the polarizing beam splitter PBS and the mask Ma or the angle of the polarization member in the projection optical module PLM and the position in the XZ plane is referred to as a lower control device 16 so that the optical characteristics of the projected luminous flux EL2 reflected by the mask Ma may be adjusted. In this case as well, the lower control device 16 adjusts the angle of the declination prism or the polarization member based on the information of the diameter of the mask Ma after the exchange. The operator of the exposure apparatus U3d may also perform the adjustment of the replacement of the cylindrical lens 54 and the adjustment of the defocusing prism.

29 is a diagram showing a change in arrangement of an encoder head or the like in the case of exchanging with a mask having a different diameter. In the adjustment in the step S103, the encoder heads EH1 and EH2, the alignment microscopes GS1 and GS2, the focal measurement device AFM on the mask M side, and the foreign matter inspection device (CD) is adjusted. As shown in Fig. 29, for example, the mask Ma and the mask holding drum 21a each having a radius Rma smaller in diameter are exchanged from the mask M and the mask holding drum 21 having a radius (curvature radius) Rm The encoder heads EH1 and EH2, the alignment microscopes GS1 and GS2, the focus measuring apparatus AFM and the foreign substance inspection apparatus CD disposed around the mask M are arranged in a mask Ma, or adjust the posture. By doing so, it becomes possible to correctly measure the position of the alignment mark on the mask Ma, the rotation angle of the mask Ma, and the like.

In the example shown in Fig. 29, the alignment microscopes GS1 and GS2, the focus measuring device AFM and the foreign material inspection device CD are arranged around the mask Ma whose diameter is reduced. The encoder heads EH1 and EH2 in this example are arranged such that the positions of the first projection optical system (odd-numbered) IRa and the second projection optical system (even-numbered) In the present embodiment. Therefore, it is not necessary to largely change the positions of the encoder heads EH1 and EH2 in the XZ plane after the mask replacement.

However, by exchanging with the mask Ma, the scale of the outer circumferential surface of the scale disc SD read by the encoder heads EH1 and EH2, or the scale formed on the outer circumferential surface of the mask holding drum 21a together with the mask Ma, And the read angle relative to each of the encoder heads EH1 and EH2 changes. For this reason, the posture of the encoder heads EH1 and EH2 is adjusted so as to face the scale surface exactly. Concretely, as shown by the arrows N1 and N2 shown in Fig. 29, each of the heads EH1 and EH2 is rotated (inclined) at that position in accordance with the diameter of the scale surface. By doing so, information on the rotation angle of the mask Ma can be obtained with high accuracy.

The masks Ma and the mask original drum SD are simultaneously exchanged together with the mask holding drum 21a to adjust the posture (inclination) of the encoder heads EH1 and EH2, It is also possible to adjust the mounting position. The scale may be provided on the surface of the mask Ma or on the outer peripheral surface of the mask holding drum 21a. When the lattice pitch in the circumferential direction of the scale read by the encoder heads EH1 and EH2 is different from that before the exchange in the case of exchanging with the mask Ma, the subordinate control device 16 sets the lattice pitch And the detected values of the encoder heads EH1 and EH2. More specifically, the conversion coefficient of how much the one count by the digital counter of the encoder system becomes the rotation angle of the mask Ma after the replacement or the moving distance of the mask face P1a in the circumferential direction is modified .

The focus measuring apparatus AFM and the foreign substance inspection apparatus CD are arranged so that the center axis of the mask M or the rotation axis of the mask Ma (the first axis AX1) or the first axis AX1a) and between the illumination field IRa of the first projection optical system and the illumination field IRb of the second projection optical system, ) Or the mask surface P1 or the mask surface P1a of the mask Ma may be detected from below. This makes it possible to reduce the change in the distance from the focal point measuring device AFM and the foreign object inspection device CD to the surface of the mask M or the surface of the mask Ma before and after the replacement of the mask Ma . For this reason, there is a possibility that the optical system of the focal measurement device (AFM) and the foreign object inspection device (CD) or the processing software may be modified. In this case, it is not necessary to change the mounting positions of the focus measurement device AFM and the foreign matter inspection device CD.

The defocus in the projection area PA (the circumferential direction of the substrate P in the scanning direction or the mask Ma) becomes large because the radius of curvature becomes small by exchanging with the mask Ma There is a possibility. In this case, it is necessary to adjust the exposure width (including the inclined portion), the illuminance of the illumination optical system IL, or the scanning speed (the rotation speed of the mask Ma and the transfer speed of the substrate P). These are obtained by adjusting the projection field stop 63 or by adjusting the output of the light source of the light source device 13 and the rotation of the mask holding drum 21a and the substrate supporting drum 25 by the subordinate control device 16 Can be adjusted. In this case, it is preferable to change the exposure width, the illuminance and the scanning speed together.

In addition, the magnification in the rotational direction of the mask Ma caused by the position of the projection area PA of the projection optical system PL, the relative positional relationship of the projection optical module PLM, and the circumferential length of the mask Ma changes And so on. The lower control unit 16 controls the phase shift optical member 65 or the magnification correction optical member 66 and the like provided in the projection optical module PLM of the projection optical system PL, The magnification of the projection area PA of the projection optical system PL or the magnification in the rotation direction of the mask Ma can be adjusted.

In step S103, adjustment of the position of the mask Ma in the Z-axis direction, adjustment of the optical components of the illumination optical system IL, adjustment of the optical components of the projection optical system PL, and adjustment of the positions of the encoder heads EH1, EH2, Or the like is performed. These may be adjusted automatically (or semiautomatically) by the subordinate control device 16 and the adjusting drive mechanism, and may be adjusted manually by the operator of the exposure apparatus U3d. In addition, in step S103, the subordinate control device 16 changes control data (various parameters) for controlling the exposure apparatus U3d or the like based on the mask information after the replacement or the exposure information or the like.

In step S103, the exposure apparatus U3d is adjusted based on the post-exchange mask information acquired in step S102, but the shape, dimensions, and mounting position of the mask Ma measured by the measuring apparatus 18 shown in Fig. Is set as the mask information, and the exposure apparatus U3d may be adjusted based on this information. In this case, for example, the lower control device 16 performs various adjustments based on the mask Ma measured by the measuring device 18 after being exchanged for the mask Ma. The lower control unit 16 displays parts or the like that need to be adjusted, for example, on a monitor or the like, and notifies the operator of the parts that the operator needs to adjust or replace. Since the exposure apparatus U3d is adjusted on the basis of the measured value of the mask Ma after the replacement, mask information after replacement with the change of the environment, such as temperature or humidity, is obtained, The exposure apparatus U3d can be adjusted based on the state. When the adjustment by the replacement with the mask Ma is completed in step S103, the process proceeds to step S104.

As described above, when the mask is replaced with a mask of a different diameter, the respective characteristics of the optical system, the mechanical system, and the detection system in the exposure apparatus may fluctuate. In this embodiment, a calibration device as shown in Fig. 30 is provided so as to confirm the characteristics and performance as an exposure apparatus after mask replacement. 30 is a diagram of a calibration apparatus. 31 is a diagram for explaining the calibration. In step S103, the exposure apparatus U3d is in a state suitable for the mask Ma after replacement, but by performing the calibration in step S104, the state of the exposure apparatus U3d is changed to a state more suitable for the mask Ma after replacement . As the calibration, the calibration device 110 shown in Fig. 30 is used. The lower control device 16 executes the calibration in the present embodiment. The subordinate control device 16 controls the first mark ALMM as an adjustment mark provided on the surface of the mask Ma held by the mask holding drum 21a as shown in Fig. 31 by the calibration device 110, And detects the second mark ALMR as the adjustment mark provided on the surface of the substrate supporting drum 25 (the portion supporting the substrate P of the substrate supporting drum 25). The lower control device 16 controls the illumination optical system IL, the projection optical system PL and the mask Ma so that the relative positions of the first mark ALMM and the second mark ALMR are in a predetermined positional relationship. The rotational speed, the conveying speed or magnification of the substrate P, and the like. Therefore, it is preferable that the step S104 of the calibration is performed before the substrate P is wound on the substrate supporting drum 25. However, since the permeability of the substrate P is high and various patterns are not formed on the substrate P The substrate P may be calibrated while the substrate P is wound around the substrate supporting drum 25. [

30, the calibration apparatus 110 includes an imaging element (e.g., CCD, CMOS) 111, a lens group 112, a prism mirror 113, and a beam splitter 114 do. The calibration apparatus 110 is provided corresponding to each of the illumination optical systems IL1 to IL6 in the case of the multi-lens system. The lower control device 16 controls the beam splitter 114 of the calibration device 110 so that the beam splitter 114 is disposed between the illumination optical system IL and the polarization beam splitter PBS . When the calibration is not performed, the beam splitter 114 avoids the optical path of the illumination luminous flux EL1.

Since the sensitivity of the image pickup device 111 is sufficiently high, loss of optical power may not be considered. For this reason, the beam splitter 114 may be, for example, a half prism or the like. The calibration device 110 can be miniaturized by allowing the beam splitter 114 to enter and exit the optical path of the illumination luminous flux EL1 between the illumination optical system IL and the polarization beam splitter (PBS).

As shown in Fig. 30, the light flux from the light source for calibration 115 is incident on the surface of the surface on which the illumination light flux EL1 of the polarization beam splitter PBS for separating the illumination light flux EL1 and the projected light flux EL2 enters And the incident light is incident from the opposite surface side. In addition, the calibration light source 115 (light emitting portion) is disposed on the back side of the second mark ALMR of the substrate supporting drum 25 to irradiate the calibration light flux from the back side of the second mark ALMR , The light transmitted through the second mark ALMR may be projected onto the mask surface P1a of the mask Ma after replacement via the projection optical system PL and the polarizing beam splitter PBS. In this case, the image pickup element 111 of the calibration apparatus 110 detects the image of the second mark ALMR of the substrate support drum 25, which is projected back onto the mask Ma after replacement, ) Can be picked up together with the first mark (ALMM)

The beam splitter 114 is arranged in the optical path of the illumination luminous flux EL1 between the illumination optical system IL and the polarizing beam splitter PBS so that the image of the first mark ALMM, And the image of the second mark ALMR from the substrate supporting drum 25 are guided to the prism mirror 113 of the calibration device 110 via the beam splitter 114. [ The light of each mark image reflected by the prism mirror 113 passes through the lens group 112 and then passes through the lens group 112 so that the imaging time (sampling time) of one frame is 0.1 to 1 millisecond And enters the imaging element 111 having a short, high-speed shutter speed. The lower control device 16 analyzes the image signal corresponding to the image of the first mark ALMM and the image of the second mark ALMR outputted from the image pickup device 111, The relative positional relationship between the first mark ALMM and the second mark ALMR is obtained on the basis of the measured values of the encoder heads EH1, EH2, EN2 and EN3 at the time of sampling (sampling) The rotation speed of the illumination optical system IL, the projection optical system PL, the mask Ma, the conveying speed or magnification of the substrate P,

31, the first mark ALMM is set such that each illumination region IR (IR1 to IR6) corresponding to each illumination optical system IL (IL1 to IL6) is located between the center plane CL (Triangular portions at both ends in the Y direction of each illumination region IR). The second mark ALMR is a position at which the projection areas PA (PA1 to PA6) corresponding to the respective projection optical systems PL (PL1 to PL6) overlap with each other with the center plane CL therebetween The triangular portions at both ends in the Y direction of the projection area PA). In the calibration, the calibration apparatus 110 provided for each projection optical module PLM sequentially arranges the first mark (odd-numbered) and the second-aligned (even-numbered) (ALMM) and the image of the second mark ALMR.

As described above, when the adjustment (mainly the mechanical adjustment) by the replacement with the mask Ma is completed in the step S103, the lower control device 16 returns the mask Ma after the replacement and the substrate P The exposure apparatus U3d is adjusted such that the positional deviation between itself and the substrate supporting drum 25 is within the allowable range. Thus, the subordinate control device 16 adjusts the exposure apparatus U3d by using at least the image of the first mark ALMM and the image of the second mark ALMR. By doing so, an error which can not be corrected by the mechanical adjustment is further corrected based on the image of the actual mark obtained from the mask Ma after the replacement and the substrate supporting drum 25. [ As a result, the exposure apparatus U3d can perform exposure using the mask Ma after replacement with appropriate and good precision.

In the above example, the exposure apparatus U3d is mainly mechanically adjusted after the mask is exchanged, but the adjustment after the mask is exchanged is not limited to this. For example, when the difference in diameter of the cylindrical masks that can be mounted on the exposure apparatus U3d is small, the effective diameter of the illumination optical system IL and the effective diameter of the projection optical system PL can be set in accordance with the cylindrical mask having the smallest diameter among the cylindrical masks. And the size of the polarization beam splitter (PBS) are determined, it is possible to make the adjustment of the angular characteristics etc. of the illumination luminous flux EL1 unnecessary. In this way, the adjustment operation of the exposure apparatus U3d can be simplified. In the present embodiment, in the case where the masks usable in the exposure apparatus U3d are divided into a plurality of groups for each diameter of the mask, the diameter of the mask is changed in the group, and the diameter of the mask is changed beyond the group , The object of adjustment of the exposure apparatus U3d, or the like may be changed.

32 is a side view showing an example in which a mask is rotatably supported using an air bearing. 33 is a perspective view showing an example in which a mask is rotatably supported using an air bearing. Both ends of the mask holding drum 21 holding the mask M may be rotatably supported by air bearings 160. [ The air bearing 160 is formed by annularly arranging a plurality of support units 161 on the outer peripheral portion of the mask holding drum 21. [ The air bearing 160 ejects air (air) from the inner circumferential surface of each of the support units 161 toward the outer peripheral surface of the mask holding drum 21 to rotate the mask holding drum 21 rotatably do. As described above, the air bearing 160 is a mask holding mechanism in which one of a plurality of masks M having different diameters is replaceably mounted and rotated around a predetermined axis (first axis AX1) Function.

In the above-described step S103, the air bearing 160 is replaced by the supporting unit 161 in accordance with the diameter of the replaced mask Ma. When the difference in diameter (2 x Rm) of the mask M is small before and after the replacement, the position in the radial direction of each support unit 161 may be adjusted to correspond to the mask M after replacement . In this way, when the exposure apparatus U3d rotatably supports the mask M via the air bearing 160, the air bearing 160 is provided with an exposure apparatus (U3d) functions as a bearing device on the main body side.

&Lt; Sixth Embodiment &

34 is a diagram showing the entire configuration of an exposure apparatus according to the sixth embodiment. The exposure apparatus U3e will be described with reference to Fig. Only the portions different from the above-described embodiment will be described so as to avoid redundant description, and the same constituent elements as those of the embodiment will be described by giving the same reference numerals as those of the embodiment. The configuration of the exposure apparatus U3d according to the fifth embodiment can be applied to the present embodiment.

The exposure apparatus U3 of the embodiment uses a reflection type mask in which the light reflected by the mask becomes a projected light flux. However, in the exposure apparatus U3e of the present embodiment, the light transmitted through the mask is a transmission type A mask (transmissive cylindrical mask) is used. In the exposure apparatus U3e, the mask holding mechanism 11e is provided with a mask holding drum 21e for holding the mask MA, a guide roller 93 for holding the mask holding drum 21e, A driving roller 94 for driving the driving roller 21e, and a driving unit 96. Although not shown, the exposure apparatus U3e has an exchange mechanism 150 for exchanging the mask MA as shown in Fig.

The mask holding mechanism 11e replaceably mounts one of the plurality of masks MA having different diameters and rotates around a predetermined axis (first axis AX1). The exposure apparatus U3e is mounted on a mask holding mechanism 11e which is replaceably mounted with one of a plurality of masks MA having different diameters and rotates around a first axis AX1 as a predetermined axis And has an adjusting section for adjusting at least the distance between the first axis AX1 and the substrate supporting mechanism in accordance with the diameter of the mask MA. This adjustment section sets the interval between the outer peripheral surface of the mask MA mounted on the mask holding mechanism 11e and the substrate P supported by the substrate holding mechanism within a predetermined allowable range.

The mask holding drum 21e is a cylindrical shape having a constant thickness, made of, for example, glass or quartz, and the outer circumferential surface (cylindrical surface) forms the mask surface of the mask MA. That is, in the present embodiment, the illumination area on the mask MA curves into a cylindrical surface shape having a constant radius of curvature Rm from the center line. A portion of the mask holding drum 21e that overlaps the pattern of the mask MA when viewed from the radial direction of the mask holding drum 21e, for example, a portion other than both ends in the Y axis direction of the mask holding drum 21e Has light transmittance with respect to the illumination luminous flux. On the mask surface, an illumination area on the mask MA is arranged.

The mask MA may be a transmissive planar shape in which a pattern is formed by a light shielding layer such as chrome on one side of a very thin flat glass plate (for example, 100 mu m to 500 mu m in thickness) Is formed as a sheet mask, is bent along the outer circumferential surface of the mask holding drum 21e, and is used in a state of being wound (adhered) to the outer circumferential surface. The mask MA has a non-patterned area on which no pattern is formed and is mounted on the mask holding drum 21e in the non-patterned area. The mask MA can be detached from the mask holding drum 21e. The mask MA is wound around the outer peripheral surface of the mask holding drum 21e by the transparent cylindrical mother material in such a manner that the outer peripheral surface of the mask holding drum 21e is not directly wound around the mask holding drum 21e by the transparent cylindrical mother material, The mask pattern formed by the light shielding layer may be drawn and integrated. Also in this case, the mask holding drum 21e functions as a supporting member of the mask.

The guide roller 93 and the drive roller 94 extend in the Y axis direction parallel to the central axis of the mask holding drum 21e. The guide roller 93 and the drive roller 94 are provided so as to be rotatable about an axis parallel to the rotational center axis of the mask MA and the mask holding drum 21e. Each of the guide roller 93 and the drive roller 94 has an outer diameter larger than the outer diameter of the other end portion in the axial direction, and this end portion is in contact with the mask holding drum 21e. Thus, the guide roller 93 and the drive roller 94 are provided so as not to contact the mask MA held by the mask holding drum 21e. The driving roller 94 is connected to the driving portion 96. The driving roller 94 rotates the mask holding drum 21e around its rotational center axis by transmitting the torque supplied from the driving unit 96 to the mask holding drum 21e.

The mask holding mechanism 11e is provided with one guide roller 93, but the number is not limited and may be two or more. Similarly, although the mask holding mechanism 11e is provided with one driving roller 94, the number is not limited and may be two or more. At least one of the guide roller 93 and the drive roller 94 is disposed inside the mask holding drum 21e and may be in contact with the mask holding drum 21e. The portion of the mask holding drum 21e which does not overlap with the pattern of the mask MA as seen from the radial direction of the mask holding drum 21e (both ends in the Y-axis direction) may have light transmittance with respect to the illumination luminous flux , And it may not have a light transmitting property. One or both of the guide roller 93 and the drive roller 94 may have, for example, a truncated cone shape, and the central axis (rotation axis) thereof may not be parallel to the central axis.

The exposure apparatus U3e is provided with a field of view (illumination region) IRa of the first projection optical system and a field of view region of the second projection optical system Illumination region) IRb are preferably arranged. In this way, even if the diameter of the mask MA changes, the position in the Z-axis direction of each of the visual areas IRa and IRb can be kept constant. As a result, when the masks MA having different diameters are exchanged, it is easy to adjust the position in the Z-axis direction of each of the visual field regions IRa and IRb.

The illumination device 13e of this embodiment includes a light source (not shown) and an illumination optical system (illumination system) ILe. The illumination optical system ILe has a plurality of (for example, six) illumination optical systems ILe1 to ILe6 aligned in the Y-axis direction corresponding to each of the plurality of projection optical systems PL1 to PL6. As with the light source device 13 of the embodiment, various light sources can be used as the light source. The illumination light emitted from the light source is divided into a plurality of illumination optical systems (ILe1 to ILe6) through the light guide member such as an optical fiber, for example, with uniform illumination distribution.

Each of the plurality of illumination optical systems ILe1 to ILe6 includes a plurality of optical members such as a lens. Each of the plurality of illumination optical systems ILe1 to ILe6 includes, for example, an integrator optical system, a rod lens, or a fly's eye lens, and illuminates an illumination area of the mask MA with an illumination luminous flux of a uniform illumination distribution. In the present embodiment, the plurality of illumination optical systems ILe1 to ILe6 are disposed inside the mask holding drum 21e. Each of the plurality of illumination optical systems ILe1 to ILe6 passes through the mask holding drum 21e from the inside of the mask holding drum 21e and passes through the mask holding drum 21e, Illuminates the area.

The illumination device 13e guides the light emitted from the light source by the illumination optical systems ILe1 to ILe6 and irradiates the guided illumination light beam onto the mask MA from the inside of the mask holding drum 21e. The illumination device 13e illuminates a part (illumination area) of the mask MA held by the mask holding drum 21e with a uniform brightness by the illumination luminous flux. The light source may be disposed inside the mask holding drum 21e, or may be disposed outside the mask holding drum 21e. The light source may be an apparatus (external apparatus) separate from the exposure apparatus U3e.

The illumination optical systems ILe1 to ILe6 irradiate an illumination luminous flux extending in a slit shape in the direction of the first axis AX1 as a predetermined axis from the inside of the mask MA to the outer peripheral surface thereof. The exposure apparatus U3e has an adjustment section for adjusting the width of the illumination light flux in the rotational direction of the mask MA in accordance with the diameter of the mounted mask MA.

The substrate supporting mechanism 12e of the exposure apparatus U3e includes a substrate stage 102 for holding a substrate P in a planar shape and a stage support mechanism 12e for supporting the substrate stage 102 in the X direction in a plane perpendicular to the center plane CL Therefore, a moving device (not shown) for scanning movement is provided. The surface of the substrate P on the side of the support surface P2 shown in Fig. 34 is a plane substantially parallel to the XY plane and therefore is reflected from the mask MA and passes through the projection optical system PL, The principal ray of the projected light beam becomes perpendicular to the XY plane. In the calibration in step S104 described above, the second mark ALMR shown in Fig. 31 is provided on the surface of the support surface P2 of the substrate stage 102. [

Although the exposure apparatus U3e uses a transmissive mask as the mask MA, it can be exchanged with the mask MA of another diameter in the same manner as the exposure apparatus U3 in this case. At least one of the illumination optical systems ILe1 to ILe6 and the projection optical systems PL1 to PL6 is adjusted at least in the same way as the exposure apparatus U3 when the exposure apparatus U3e is replaced with another mask MA having a different diameter (Set) so that the relative positional relationship between the mask MA after the replacement and the substrate stage 102 for carrying the substrate P is shifted within a predetermined allowable range. By doing so, the error that can not be corrected by the mechanical adjustment is further corrected accurately based on the mask MA and the actual mark image acquired from the substrate stage 102 or the like. As a result, the exposure apparatus U3e is maintained at an appropriate and good accuracy, and exposure with the mask after replacement can be performed.

The substrate holding mechanism 12e of the exposure apparatus U3e of the present embodiment may be applied to the exposure apparatus U3 instead of the substrate holding mechanism 12 of the exposure apparatus U3 of the embodiment. The substrate supporting drum 25 is rotatably supported on the exposure apparatus U3 of the embodiment by using the guide roller 93 and the driving roller 94 and the guide roller 93 and the driving roller 94 (Illumination region) IRa of the first projection optical system and the visual field region (illumination region) IRb of the second projection optical system shown in Fig. 25 may be disposed at the position of the second projection optical system. This makes it easy to adjust the position in the Z-axis direction of each of the visual areas IRa and IRb when the mask MA is exchanged with a mask having a different diameter.

&Lt; Seventh Embodiment &

Fig. 35 is a diagram showing the entire configuration of an exposure apparatus according to the seventh embodiment. The exposure apparatus U3f will be described with reference to Fig. Only the portions different from the above-described embodiment will be described so as to avoid redundant description, and the same constituent elements as those of the embodiment will be described by giving the same reference numerals as those of the embodiment. The respective configurations of the exposure apparatus U3d of the fifth embodiment and the exposure apparatus U3e of the sixth embodiment can be applied to the present embodiment.

The exposure apparatus U3f is a substrate processing apparatus that performs so-called proximity exposure on a substrate P. [ The exposure apparatus U3f sets the gap (proximity gap) between the mask MA and the substrate support drum 25f to about several micrometers to several tens of micrometers so that the illumination optical system ILc directly irradiates the substrate P The illumination luminous flux EL is irradiated, and non-contact exposure is performed. The mask MA is provided on the surface of the mask holding drum 21f. The exposure apparatus U3f according to the present embodiment is configured to use a transmissive mask in which light transmitted through the mask MA becomes a projected light flux EL. In the exposure apparatus U3f, the mask holding drum 21f is formed of, for example, glass or quartz, and has a cylindrical shape with a constant thickness. The outer peripheral surface (cylindrical surface) do. Although not shown, the exposure apparatus U3f has an exchange mechanism 150 for exchanging the mask MA as shown in Fig.

In the present embodiment, the substrate supporting drum 25f rotates by the torque supplied from the second driving portion 26f including an actuator such as an electric motor. A pair of driving rollers MGG and MGG connected by, for example, a magnetic gear, drives the mask holding drum 21f so as to be opposite to the rotating direction of the second driving portion 26f. The second driving portion 26f rotates the substrate supporting drum 25f and rotates the driving rollers MGG and MGG and the mask holding drum 21f to rotate the mask holding drum 21f and the substrate supporting drum 25f, (Synchronous rotation). The substrate P is partly wound around the substrate supporting drum 25f via a pair of air / turn bars ATB1f and ATB2f and a pair of guide rollers 27f and 28f, The substrate P is conveyed in synchronism with the mask holding drum 21f. As described above, the pair of drive rollers MGG and MGG are configured such that one of a plurality of masks having diameters different from each other is replaceably mounted and a mask holding (not shown) for rotating around a predetermined axis (first axis AX1) It functions as a mechanism.

The illumination optical system ILc is arranged at a position where the substrate P supported by the substrate support drum 25f is closest to the outer peripheral surface of the mask MA at a position with respect to the pair of drive rollers MGG, And projects an illumination luminous flux extending in a slit shape in the Y direction toward the substrate P from the inside of the mask MA. In this proxy light exposure method, since the exposure position (corresponding to the projection area PA) of the mask pattern on the substrate P is one in the circumferential direction of the mask MA, it is exchanged to a cylindrical mask having a different diameter The position of the cylindrical mask in the Z axis direction or the position of the substrate supporting drum 25f supporting the substrate P in the Z axis direction may be adjusted so as to maintain the proximity gap at a predetermined value.

In this way, the exposure apparatus U3f uses a transmissive mask as the mask MA and further performs proxy light exposure on the substrate P. In this case, as in the exposure apparatus U3, (MA). The exposure apparatus U3f performs the same calibration as that of the exposure apparatus U3 to exchange the mask MA after the replacement with the substrate MA The relative positional deviation (including the proximity gap) with respect to the drum 25f can be adjusted to be within the permissible range. By doing so, the error that can not be corrected by the mechanical adjustment is more precisely corrected based on the actual marks obtained from the mask MA and the substrate supporting drum 25f, and as a result, the exposure apparatus U3f It becomes possible to perform exposure while maintaining proper and good precision.

The illumination optical system ILc of the exposure apparatus U3f as shown in Fig. 35 is a system in which an illumination light beam having a narrow width in the X direction (the rotation direction of the mask MA) It is not necessary to substantially adjust the alignment characteristic (inclination of the principal ray) of the illumination luminous flux from the illumination optical system ILc even if the diameter of the cylindrical mask to be mounted is different. However, in order to change the width of the illumination light beam irradiated on the mask surface in the X direction (the direction of rotation of the mask MA) in accordance with the diameter (radius) of the mask MA, A refractive optical system (for example, a cylindrical zoom lens or the like) for reducing or enlarging the width of the illumination light beam in the X direction (the rotation direction of the mask MA) may be provided.

In the exposure apparatus U3f in Fig. 35, the substrate P is supported by the substrate support drum 25f in the form of a cylindrical surface, but it may be supported in a plane shape like the exposure apparatus U3e in Fig. The width of the illumination light flux in the X direction (the rotation direction of the mask MA) corresponding to the difference in the diameter of the mask MA can be reduced as compared with the case where the substrate P is supported in a planar shape, It is possible to broaden the range of adjustment of This makes it possible to optimally adjust the width of the illumination light flux in the X direction (rotation direction of the mask MA) within the allowable range of the proximity and gap according to the diameter of the mask MA, It is possible to optimize the maintenance of pattern quality (fidelity and the like) and productivity. In this case, a variable blind, a cylindrical zoom zoom lens, or the like is included in the adjustment portion for adjusting the width of the illumination luminous flux in accordance with the diameter of the transmissive mask MA.

In each of the above embodiments, the diameter of the cylindrical mask that can be attached to the exposure apparatus has a certain range. For example, in an exposure apparatus provided with a projection optical system for projecting a fine pattern having a line width of approximately 2 mu m to 3 mu m, the depth of focus (DOF) of the projection optical system is narrow from the width to several tens of mu m, It is general that the focus adjustment range is narrow. In such an exposure apparatus, it is difficult to mount a cylindrical mask having a diameter changed from a predetermined diameter to a millimeter unit. However, in the case where a large adjustment range is provided for each part and each mechanism so as to correspond to the diameter change of the cylindrical mask from the beginning on the side of the exposure apparatus, the diameter range of the mountable cylindrical mask is It is decided. 35, a gap between a part of the outer circumferential surface of the mask MA and the substrate P may be within a predetermined range, and if the support mechanism of the cylindrical mask can cope with this, 0.5 times diameter, 1.5 times diameter, 2 times diameter ... , And it is possible to mount a substantially different cylindrical mask.

Fig. 36 is a perspective view showing an example of a partial structure of a support mechanism in the exposure apparatus of the reflection type cylindrical mask M. Fig. 36 shows only the mechanism for supporting the shaft 21S projecting to one side in the direction (Y direction) in which the rotation axis AX1 of the cylindrical mask M (mask holding drum 21) extends, A mechanism is provided. 36, the original scale SD is provided integrally with the cylindrical mask M. At the same time as the mask pattern for the device is formed on both end sides in the Y direction of the outer peripheral surface of the cylindrical mask M, (Lattice) readable by the user.

A cylindrical body 21K precision-machined to a constant diameter is formed at the tip of the shaft 21S, even with a mask M (mask holding drum 21) of a different diameter. The cylindrical body 21K is provided with a Z movable body 204 movable in the vertical direction (Z direction) in a U-shaped notch portion of a frame (body) 200 of the exposure apparatus main body . At the end portion of the U-shaped notch portion of the frame 200 extending in the Z direction, guide rail portions 201A and 201B extending linearly in the Z direction are formed to face each other at a predetermined interval in the X direction.

The Z movable body 204 is provided with a semi-circular recessed pad portion 204P for supporting a lower half of the cylindrical body 21K by air bearings and a guide portion 201A, 201B of the frame 200, The slider portions 204A and 204B are formed. The slider portions 204A and 204B are supported by the guide rail portions 201A and 201B so as to move smoothly in the Z direction by a mechanical bearing or an air bearing.

The frame 200 is provided with a ball screw 203 rotatably supported around an axis parallel to the Z axis and a driving source (motor, reduction gear, etc.) 202 for rotating the ball screw 203 do. The nut portion threadedly engaged with the ball screw 203 is provided in the cam member 206 provided on the lower side of the Z movable body 204. Therefore, by the rotation of the ball screw 203, the cam member 206 is linearly moved in the Z direction, whereby the Z movable member 204 also linearly moves in the Z direction. Although not shown in Fig. 36, a guide member for guiding the cam member 206 to move in the Z direction without being displaced in the X direction or Y direction may be provided on the member for supporting the tip end portion of the ball screw 203 .

The cam member 206 and the Z movable member 204 may be integrally fixed to each other and may be connected by a plate spring or a flexure having a high rigidity in the Z direction and a low rigidity in the X direction or the Y direction . Alternatively, a spherical sheet may be formed on the upper surface of the cam member 206 and the lower surface of the Z movable member 204, respectively, and a steel ball may be provided between such spherical sheets. The cam member 206 and the Z movable member 204 are supported with high rigidity in the Z direction while the cam member 206 and the Z movable member 204 are relatively slightly inclined relative to the cam member 206 and the Z movable member 204 Can be accepted. 36 is provided between the Z movable member 204 and the frame 200 and an elastic supporting member (not shown) for supporting most of the self weight of the cylindrical mask M (mask holding drum 21) 208A, and 208B.

The elastic supporting members 208A and 208B are constituted by an air piston whose length is changed by supplying a pressurized gas into the inside thereof and are constituted by a cylindrical mask M (mask holding drum 21) supported by the Z movable body 204, ) Is supported by air pressure. When the cylindrical body 21K as the rotating shaft of the cylindrical mask M (mask holding drum 21) is supported by the pad portion 204P of the Z movable member 204, the cylindrical mask M Maintenance drum 21), the weight of course is different. Therefore, the pressure of the pressurized gas supplied into the air piston as the elastic support members 208A, 208B is adjusted in accordance with the self weight. By doing so, the load in the Z direction acting between the ball screw 203 and the nut portion of the cam member 206 is reduced to a large width, and the ball screw 203 can be rotated with a very small torque, Therefore, the driving source 202 can be made small, and deformation of the frame 200 due to heat generation can be suppressed.

Although not shown in Fig. 36, the position of the Z movable element 204 in the Z direction is precisely measured with sub-micron measurement resolution by a measuring device such as a linear encoder, The drive source 202 is servo-controlled. A load sensor for measuring a change in load acting between the Z movable member 204 and the cam member 206 or a torsional sensor for measuring the deformation due to stress in the Z direction of the cam member 206 are provided, The pressure (gas supply and exhaust) of the pressurized gas supplied to the air pistons as the elastic support members 208A and 208B may be servo-controlled according to the measured values from the respective sensors.

In addition, after the cylindrical mask M (mask holding drum 21) is mounted on the pad portion 204P of the Z movable member 204 and the height in the Z direction by the driving source 202 is set to a predetermined position, (Mask holding drum 21) is moved again in the Z direction (in the middle) of the cylindrical mask M (mask holding drum 21) based on the results of the calibration or calibration of the illumination optical system IL and the projection optical system PL There is also a place to move. The supporting mechanism including the Z movable body 204 in Fig. 36 is also provided on the shaft on the opposite side of the cylindrical mask M (mask holding drum 21), and each Z movable body 204 of the supporting mechanism provided on both sides, It is possible to adjust the minute inclination of the rotation center axis AX1 with respect to the XY plane. As described above, when the position adjustment and the inclination adjustment of the mounted cylindrical mask M (mask holding drum 21) in the Z direction are completed, the Z movable body 204 is guided by the guide rail portions 201A and 201B Frame 200).

The moving stroke of the Z movable member 204 in the Z direction is represented by DSa-DSb (DSa-DSb), where DSa is the maximum diameter of the cylindrical mask M (mask holding drum 21) ) / 2. For example, when the maximum diameter of the cylindrical mask M (mask holding drum 21) that can be mounted is 300 mm and the minimum diameter is 240 mm, the moving stroke of the Z movable member 204 is 30 mm.

The cylindrical mask M having a diameter of 300 mm is formed such that the pattern forming region as the mask M is widened by 60 mm x? 188 mm in the circumferential direction (scanning exposure direction) of the cylindrical mask with respect to the cylindrical mask M having a diameter of 240 mm It means that you can. When the planar mask is scanned and moved in a one-dimensional manner as in the conventional scanning exposure apparatus, the pattern forming region is widened in the scanning direction by increasing the size of the mask stage corresponding to the dimension enlargement of 180 mm or more of the flat mask, The size of the body structure is increased. On the other hand, as shown in Fig. 36, the Z movable body 204 supporting the rotary shaft AX1 (shaft 21S) of the cylindrical mask M (mask holding drum 21) can be moved accurately in the Z direction It is possible to easily cope with the enlargement of the pattern formation area of the mask without enlarging other parts of the apparatus.

<Device Manufacturing Method>

Next, a device manufacturing method will be described with reference to Fig. 37 is a flowchart showing a device manufacturing method by the device manufacturing system. This device manufacturing method can be realized by any of the first to seventh embodiments.

In the device manufacturing method shown in Fig. 37, first, functional and performance design of a display panel by self-luminous elements such as organic EL is performed, and necessary circuit patterns and wiring patterns are designed by CAD or the like (step S201). Next, on the basis of a pattern for each of various layers designed by CAD or the like, a mask M of necessary layers is produced (step S202). In addition, a supply roll FR1 on which a flexible substrate P (a resin film, a metal thin film, a plastic film or the like) to be a base of the display panel is wound is prepared (step S203). The roll-shaped substrate P prepared in this step S203 may be one obtained by modifying the surface of the substrate P if necessary, by preforming a base layer (for example, fine irregularities by the imprinting method) Or a film or a transparent film (insulating material) laminated in advance.

Next, a back plane layer composed of an electrode or wiring, an insulating film, a TFT (thin film semiconductor) or the like constituting the display panel device is formed on the substrate P, and a back plane layer , A light emitting layer (display pixel portion) made of a self-luminous element such as an organic EL is formed (step S204). In this step S204, a conventional photolithography process for exposing the photoresist layer using the exposure apparatus U3 described in each of the above embodiments is also included. However, in place of the photoresist, a substrate P ), A wet process for forming patterns (wirings, electrodes, etc.) of a metal film by an electroless plating method by pattern-exposing a photo-sensitive catalyst layer to a pattern , Or a printing process for drawing a pattern by a conductive ink containing silver nanoparticles or the like.

Next, for each of the display panel devices which are continuously produced on the substrate P in the roll form, the substrate P is diced or the protective film (the environmental barrier layer ) Or a color filter sheet, or the like, and assembles the device (step S205). Next, an inspection process is performed to determine whether the display panel device functions normally or satisfies the desired performance or characteristics (step S206). In this way, a display panel (flexible display) can be manufactured.

The exposure apparatus according to the above-described embodiment and its modifications are manufactured by assembling various subsystems including the respective components listed in the claims to maintain predetermined mechanical precision, electrical precision and optical precision. In order to assure these various accuracies, before and after the assembly of the exposure apparatus, adjustment is made to achieve optical precision for various optical systems, adjustment for achieving mechanical precision for various mechanical systems, and electrical precision for various machines Adjustment is performed. The assembling process from various subsystems to the exposure apparatus includes mechanical connection of various subsystems, wiring connection of electric circuits, piping connection of air pressure circuits, and the like. Needless to say, there is an assembling process for each subsystem before the assembling process from the various subsystems to the exposure apparatus. When the assembling process of various subsystems in the exposure apparatus is completed, the total adjustment is performed, and various precision of the entire exposure apparatus is ensured. The manufacturing of the exposure apparatus is preferably performed in a clean room where temperature, cleanliness and the like are managed.

The constituent elements of the above-described embodiment and its modifications can be combined as appropriate. In addition, some components may not be used. In addition, the constituent elements may be replaced or changed within the scope not departing from the gist of the present invention. In addition, as far as the laws and ordinances permit, all publications relating to the exposure apparatus and the like cited in the above-mentioned embodiments and the description of the US patent are referred to as a part of the description of this specification. As described above, other embodiments and operating techniques, etc., made by those skilled in the art based on the above-described embodiments are included in the scope of the present invention.

1: Device manufacturing system 2: Substrate supply device
4: Substrate collection device 5: Higher control device
U3: exposure apparatus (substrate processing apparatus) M: mask
IR1 to IR6: illumination area IL1 to IL6: illumination optical system
ILM: illumination optical module PA1 to PA6: projection area
PLM: projection optics module

Claims (28)

1. A substrate processing apparatus having a projection optical system for projecting a light flux (light flux) from a pattern of a mask placed in an illumination region of an illumination light onto a projection region in which a substrate is arranged,
A first support member for supporting one of the mask and the substrate so as to follow a first surface curved in a cylindrical shape with a predetermined curvature in one of the illumination region and the projection region;
A second support member for supporting the other of the mask and the substrate so as to follow a predetermined second surface in any one of the illumination region and the projection region;
The first supporting member is rotated and the one of the mask and the substrate supported by the first supporting member is moved in the scanning exposure direction and the second supporting member is moved, And a moving mechanism for moving the other of the mask and the substrate in the scanning exposure direction,
Wherein the projection optical system forms an image of the pattern on a predetermined projection upper surface (projection image surface)
Wherein the moving mechanism is configured to set the moving speed of the first supporting member and the moving speed of the second supporting member and adjust the moving speed of the projection upper surface of the pattern and the exposure surface of the substrate, So that the speed is relatively smaller than the other moving speed. The method according to claim 1,
Wherein the moving mechanism moves the upper projection amount and the exposure surface relative to the scanning exposure direction by a difference in curvature between the projection upper surface of the pattern and the exposure surface of the substrate in the projection area Wherein the average value of the absolute values of the moving speeds of the plurality of image forming elements is set to be smaller than a minimum dimension of the image of the pattern formed on the projection image surface. The method according to claim 1,
The moving mechanism is configured to move the upper surface of the projection surface in the projection area with the upper surface of the substrate by the difference in curvature between the upper surface of the projection of the pattern and the exposure surface of the substrate, And sets the relative difference of the moving speed so that the average value of the absolute values becomes smaller than the minimum dimension of the pattern image determined by the resolving power of the projection optical system. The method according to claim 1,
The moving mechanism is configured to move the upper surface of the projection surface in the projection area with the upper surface of the substrate by the difference in curvature between the upper surface of the projection of the pattern and the exposure surface of the substrate, Wherein the average value of the squares is set to be smaller than a minimum dimension on the pattern defined by the resolution power of the projection optical system or a minimum dimension of an image on the pattern formed on the projection surface. The method according to any one of claims 2 to 4,
Wherein the moving mechanism moves the moving speed of the projection optical system such that the relative upward displacement amount between the projection top surface and the exposure surface shifted in the projection area during the scanning exposure is zero at at least three positions in the scanning exposure direction of the projection area, And sets the relative difference of the substrate. The method according to any one of claims 1 to 5,
Wherein the projection optical system is composed of a plurality of projection optical modules having the same configuration,
Wherein the projection optical module is arranged in a column direction in a direction orthogonal to the scanning exposure direction and projects the light flux to the corresponding projection area. The method of claim 6,
Wherein the plurality of projection optical modules are arranged in at least two rows in the scanning exposure direction and the gap between the adjacent projection optical modules on the first support member side and the gap on the second support member side, Is set corresponding to a ratio between a moving speed of the first supporting member and a moving speed of the second supporting member. The method according to claim 6 or 7,
Wherein the plurality of projection optical modules are arranged in at least two rows in the scanning exposure direction and the end portions of the projection region of the adjacent projection optical module partially overlap each other in a direction orthogonal to the scanning exposure direction. The method according to any one of claims 1 to 8,
Wherein the first support member supports the mask,
And the second support member supports the substrate. The method according to any one of claims 1 to 8,
Wherein the first support member supports the substrate,
And the second support member supports the mask. The method according to any one of claims 1 to 10,
And the second surface is curved in a cylindrical surface shape with a predetermined curvature. The method of claim 11,
The width of the projection area in the scan exposure direction is defined as ± A, the radius of curvature of the projection upper surface on which the image of the pattern is formed is Rm, the radius of curvature of the exposure surface in the scan exposure direction of the substrate is Rp, The angular speed of the projection top surface is? M, the angular speed of the exposure surface during the scanning exposure is? P, the numerical aperture of the projection optical system is NA, the exposure wavelength is?, And the process constant is k, Wherein when a moving speed as a reference of the exposure surface is V and a moving position within a width A of the projection area is x, the following expression is satisfied.
[Equation 1]

[Equation 2]

The method according to any one of claims 1 to 12,
One of the first supporting member and the second supporting member can exchange the supporting mask,
And adjusts at least one of a moving speed of the first supporting member, a moving speed of the second supporting member, and a width of the projection area in the scanning exposure direction based on the replaced mask. A method for manufacturing a semiconductor device, comprising: forming a pattern of the mask on the substrate using the substrate processing apparatus according to any one of claims 1 to 13;
And supplying the substrate to the substrate processing apparatus. A pattern formed on one surface of a mask curved in a cylindrical shape with a predetermined radius of curvature is projected onto the surface of a flexible substrate supported in a cylindrical shape or a plane shape via a projection optical system, Moving the substrate at a predetermined speed along the surface of the substrate held in the cylindrical or planar shape while moving the substrate at a predetermined speed along a predetermined plane, ) As an exposure light,
Rm is the radius of curvature of the projection top surface in which the projected image of the pattern is formed in the best focus state by the projection optical system, Rp is the radius of curvature of the surface of the substrate supported in the cylindrical or planar shape, Vm> Vp when Rm &lt; Rp, where Vm is a moving speed on the pattern moving along the projection image plane, and Vp is a predetermined speed along the surface of the substrate. Is set to Vm &lt; Vp. 16. The method of claim 15,
Wherein the curvature radius Rm and the curvature radius Rp are set in an arbitrary range of 0 <Rm?? And 0 <Rp? Infinite under the condition that Rm? Rp. An illumination optical system for guiding illumination light to a cylindrical mask having a pattern on an outer circumferential surface of a curved surface curved at a predetermined radius of curvature from a predetermined axis,
A substrate supporting mechanism for supporting the substrate,
A projection optical system for projecting the pattern of the cylindrical mask illuminated by the illumination light onto the substrate supported by the substrate supporting mechanism;
An exchange mechanism for exchanging the cylindrical mask,
Wherein the exchange mechanism includes an adjustment section that adjusts at least one of at least a part of the illumination optical system and at least a part of the projection optical system when the cylindrical mask is replaced with a cylindrical mask having a different diameter. 18. The method of claim 17,
Wherein the substrate supporting mechanism is a substrate supporting drum having a curved surface curved at a predetermined radius from a predetermined axis and a part of the substrate is wound on the curved surface and rotated about the axis,
Wherein the projection optical system projects the pattern of the cylindrical mask illuminated by the illumination light onto the substrate disposed on the curved surface of the substrate support drum. The method according to claim 17 or 18,
When the exchange mechanism is replaced with a cylindrical mask having a different diameter,
Wherein the adjusting unit adjusts at least one of at least a part of the illumination optical system and at least a part of the projection optical system on the basis of the information of the cylindrical mask having different diameters, And adjusts the exposure apparatus using at least an adjustment pattern provided on a portion for supporting the substrate. The method of claim 19,
The cylindrical mask having different diameters has an information storage section for storing information on its surface,
The information of the cylindrical mask having different diameters is stored in the information storage unit or included in the exposure information related to the exposure conditions,
Wherein the adjustment unit acquires information on a cylindrical mask having a different diameter from the information storage unit or the exposure information. The method of claim 19,
And a measuring device for measuring the cylindrical mask to be exchanged and acquiring the information of the cylindrical mask having different diameters. The method according to any one of claims 17 to 21,
Wherein the projection optical system includes a first projection optical system and a second projection optical system that include both the rotational central axis of the cylindrical mask and the rotational center axis of the substrate supporting drum, Lt; / RTI &gt;
Wherein the cylindrical mask having the different diameter exchanged by the exchange mechanism is arranged so that the position of the illumination visual field of the first projection optical system in the direction perpendicular to the rotational center axis of the cylindrical mask and the rotational center axis of the substrate supporting drum, And the position of the illumination field of the second projection optical system is not changed. The method according to any one of claims 17 to 22,
And the parts can be exchanged in correspondence with the plurality of cylindrical masks having different diameters. A mask holding mechanism for interchangeably mounting one of a plurality of cylindrical masks having different diameters from one another and having a pattern on an outer circumferential surface curved in a cylindrical shape with a predetermined radius from a predetermined axis and rotating around the predetermined axis,
An illumination system for irradiating the pattern of the cylindrical mask with illumination light,
A substrate supporting mechanism for supporting the substrate exposed by the light from the pattern of the cylindrical mask irradiated by the illumination light along a curved surface or a plane,
And an adjusting unit that adjusts a distance between at least the predetermined axis and the substrate supporting mechanism in accordance with the diameter of the cylindrical mask mounted on the mask holding mechanism. 27. The method of claim 24,
Wherein the plurality of cylindrical masks having different diameters are each a transmissive cylindrical mask having a transmissive pattern on the outer peripheral face,
Wherein the adjusting section sets the interval between the outer circumferential surface of the transmissive cylindrical mask mounted on the mask holding mechanism and the substrate supported by the substrate supporting mechanism within a predetermined allowable range. 26. The method of claim 25,
Wherein the illumination system has an illumination optical system for irradiating illumination luminous flux that extends in a slit shape in the predetermined axial direction from the inside of the transmissive cylindrical mask to the outer circumferential surface, To adjust the width of the mask in accordance with the diameter of the transparent cylindrical mask to be mounted. An exposure apparatus according to any one of claims 17 to 26,
And a substrate supply device for supplying the substrate to the exposure apparatus. There is provided an exposure apparatus for exposing a pattern of a cylindrical mask onto a substrate using the exposure apparatus according to any one of claims 17 to 26,
And forming a device corresponding to the pattern of the cylindrical mask on the substrate by processing the exposed substrate.

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