KR20190030297A - Apparatus for treating substrate - Google Patents

Abstract

An embodiment of the present invention provides a method for liquid-treating a substrate. The method for liquid-treating a substrate comprises a liquid applying step of supplying a photosensitive liquid onto a rotating substrate and applying the photosensitive liquid onto the substrate, and the liquid applying step includes an acceleration step of accelerating the rotational speed of the substrate from a first speed to a second speed while the photosensitive liquid is supplied. The thickness control of the photosensitive liquid along a region of the substrate is performed by controlling an arrival time at which the first speed reaches the second speed in accordance with the viscosity of the photosensitive liquid. Therefore, the thickness control of a liquid film can be controlled in each region in accordance with the viscosity of the photosensitive liquid.

Description

[0001] Apparatus for treating substrate [0002]

The present invention relates to a method of liquid-treating a substrate.

Various processes such as cleaning, deposition, photolithography, etching, and ion implantation are performed to manufacture semiconductor devices. Among these processes, the photolithography process sequentially performs the application, exposure, and development steps. The coating step is a step of applying a photosensitive liquid such as a resist to the surface of the substrate. The exposure process is a process for exposing a circuit pattern on a substrate having a photosensitive film formed thereon. The developing step is a step of selectively developing the exposed region of the substrate.

Generally, the coating step is a step of coating a photosensitive liquid on a substrate to form a liquid film. The thickness of the liquid film serves as an important factor in the exposure process and the development process which are performed subsequent to the application process. As a result, various methods for adjusting the thickness of the liquid film have been proposed.

For example, in order to control the thickness of the liquid film, various methods for adjusting the rotational speed of the substrate in the reflow process or the diffusion process after the application step of applying the photosensitive liquid have been proposed.

However, this change in rotation speed has resulted in insignificant changes in the liquid film thickness, and requires a more controllable variable of liquid film thickness.

In addition, various types of photosensitive liquids used for the substrate are used, and each of the photosensitive liquids has different properties. For example, the photosensitive liquids have different viscosities or have different adsorption forces on the substrate.

As a result, it is not easy to adjust the thickness of the liquid film formed on the substrate to a large extent at present, and it is very difficult to control the thickness of a specific portion.

SUMMARY OF THE INVENTION The present invention is to provide a method capable of largely adjusting the thickness of a liquid film formed on a substrate.

Another object of the present invention is to provide a method for adjusting the thickness of a liquid film formed by a photosensitive liquid having different properties.

The present invention also provides a method for controlling the thickness of a liquid film in a specific region.

An embodiment of the present invention provides a method for liquid-treating a substrate. A method of performing a liquid processing of a substrate includes a liquid applying step of supplying a photosensitive liquid to the rotating substrate and applying a sensitizing liquid onto the substrate, wherein the liquid applying step is performed from a first speed to a second speed Wherein the control of the thickness of the photosensitive liquid according to the area of the substrate is performed by controlling the time of arrival at the first speed to reach the second speed in accordance with the viscosity of the photosensitive liquid do.

Wherein the photosensitive liquid includes a first liquid supplied to the first substrate and having a first viscosity and a second liquid supplied to the second substrate and having a second viscosity different from the first viscosity, It is possible to control the amount of change in thickness of each region between the first liquid film by the first liquid and the second liquid film by the second liquid differently.

The liquid application step may further include a constant velocity step of maintaining the second velocity for a predetermined time while the photosensitive liquid is supplied after the acceleration step. Wherein the acceleration step is performed during the first time when the first liquid film is formed and the arrival time is performed during the second time when the second liquid film is formed, And the time required in the constant velocity step may be equal to the sum of the time required for the acceleration step and the constant velocity step in processing the second substrate.

The first viscosity has a lower viscosity than the reference value, and when the thickness of the liquid film is to be increased in the edge region of the substrate, the reaching time can be increased.

The first viscosity has a lower viscosity than the reference value, and when the thickness of the liquid film is to be reduced in the edge region of the substrate, the arrival time can be shortened.

Wherein the second viscosity has a viscosity higher than the reference value,

In the case where the thickness of the liquid film is to be increased in the central region of the substrate, the arrival time can be shortened.

The second viscosity has a viscosity higher than the reference value, and when the thickness of the liquid film is to be reduced in the central region of the substrate, the reaching time can be increased.

The first viscosity may be smaller than the second viscosity and the arrival time when the first liquid is supplied to the first substrate may be larger than the arrival time when the second liquid is supplied to the second substrate.

The first viscosity may be smaller than the second viscosity, and when the first liquid is supplied to the first substrate, the arrival time may be smaller than the arrival time when the second liquid is supplied to the second substrate.

A method of applying a liquid to a substrate includes applying a photosensitive liquid to the substrate to be rotated and applying the photosensitive liquid onto the substrate, stopping the supply of the photosensitive liquid, rotating the substrate to rotate the photosensitive liquid applied on the substrate And a reflow step of reflowing the substrate on the substrate, wherein the liquid application step includes an acceleration step of accelerating the rotation speed of the substrate from the first speed to the second speed while the photosensitive liquid is supplied, 1 viscosity and a second liquid having a second viscosity, wherein the acceleration step includes a step of applying a first liquid to the first substrate in such a manner that when the first liquid is applied to the first substrate, Wherein the first time is a second time when the second liquid is applied to the second substrate, and the second time is a second time when the second time is reached; And the second time is different from the second viscosity is different, and the first viscosity to each other.

The liquid application step may further include a constant velocity step of maintaining the second velocity for a predetermined time while the photosensitive liquid is supplied after the acceleration step. The sum of the time required for the acceleration step and the time required for the constant velocity step in processing the first substrate may be equal to the sum of the time required for the acceleration step and the constant velocity step in processing the second substrate.

The first time and the second time may be respectively controlled so that the amount of change in thickness of each region between the first liquid film by the first liquid and the second liquid film by the second liquid may be controlled differently.

The first viscosity may have a lower viscosity than the reference value, and the first time may be longer when the thickness of the liquid film in the edge region of the substrate is increased.

The first viscosity may have a lower viscosity than the reference value and the first time may be shortened when the thickness of the liquid film is to be reduced in the edge region of the substrate.

The second viscosity may have a higher viscosity than the reference value, and the second time may be shortened if the thickness of the liquid film is to be increased in the central region of the substrate.

The second viscosity may have a viscosity higher than the reference value and the second time may be increased if the thickness of the liquid film is to be reduced in the central region of the substrate.

A method of forming a liquid film on a substrate includes the steps of supplying a photosensitive liquid onto the substrate and coating the photosensitive liquid on the substrate while accelerating the substrate at a first speed to a second speed while the photosensitive liquid is supplied to the substrate And adjusting a reaching time at which the second speed is reached at the first speed to adjust the thickness of the liquid film of the photosensitive liquid according to the area of the substrate.

When the photosensitive liquid has a viscosity higher than a reference value, the thickness of the liquid film can be adjusted in the central region of the substrate by controlling the arrival time.

When the photosensitive liquid has a viscosity lower than a reference value, the thickness of the liquid film can be adjusted in the edge region of the substrate by controlling the arrival time.

The method may further include a constant velocity step of maintaining the substrate at the second velocity for a predetermined time after the acceleration step while the photosensitive liquid is supplied to the substrate.

The method includes a pretreatment step of rotating the substrate at the first speed before applying the photoresist solution and supplying a pretreatment solution onto the substrate, and a step of stopping the supply of the photoresist solution after the application of the photoresist solution And a reflow step of rotating the substrate at a third speed which is slower than the first speed and reflowing the photosensitive liquid applied on the substrate on the substrate.

According to the embodiment of the present invention, the rotation speed of the substrate is accelerated while the photosensitive liquid is applied. This makes it possible to control the thickness of the liquid film to a large extent.

In addition, according to the embodiment of the present invention, the range of variation in the thickness control varies depending on the viscosity of the photosensitive liquid. Therefore, the thickness control of the liquid film can be controlled in each region according to the viscosity of the photosensitive liquid.

1 is a plan view of a substrate processing apparatus according to an embodiment of the present invention.
Fig. 2 is a cross-sectional view of the equipment of Fig. 1 viewed from the direction AA.
3 is a cross-sectional view of the equipment of FIG. 1 viewed from the BB direction.
4 is a cross-sectional view of the installation of FIG. 1 viewed in the CC direction.
5 is a plan view showing the substrate processing apparatus of FIG.
6 is a cross-sectional view showing the substrate processing apparatus of FIG.
7 is an enlarged perspective view of the nozzle member of Fig. 6; Fig.
FIG. 8 is a graph showing changes in the rotation speed of the substrate in each step in the process of applying the substrate using the apparatus of FIG.
FIG. 9 is a graph showing a change in thickness of a liquid film on a substrate in accordance with a change in arrival time in an acceleration step at the time of application of a low viscosity photoresist in FIG. 8; FIG.
FIG. 10 is a graph showing a change in the thickness of a liquid film on a substrate in accordance with a change in the time of arrival in the accelerating step at the time of application of the high viscosity liquid of FIG. 8;
11 is a graph showing another embodiment of Fig.
12 is a view illustrating a coating process according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

The facilities of this embodiment can be used to perform a photolithography process on a substrate such as a semiconductor wafer or a flat panel display panel. In particular, the apparatus of this embodiment can be used to perform a coating process and a developing process on a substrate, which is connected to an exposure apparatus. Hereinafter, a case where a wafer is used as a substrate will be described as an example.

Hereinafter, the substrate processing apparatus of the present invention will be described with reference to FIGS. 1 to 12. FIG.

FIG. 1 is a view of the substrate processing apparatus viewed from above, FIG. 2 is a view of the apparatus of FIG. 1 viewed from the AA direction, FIG. 3 is a view of the apparatus of FIG. 1 viewed from the BB direction, In the CC direction.

1 to 4, the substrate processing apparatus 1 includes a load port 100, an index module 200, a first buffer module 300, a coating and developing module 400, a second buffer module 500 An exposure pre- and post-processing module 600, and an interface module 700. The load port 100, the index module 200, the first buffer module 300, the application and development module 400, the second buffer module 500, the pre-exposure processing module 600, and the interface module 700, Are sequentially arranged in one direction in a single direction.

Hereinafter, the load port 100, the index module 200, the first buffer module 300, the coating and developing module 400, the second buffer module 500, the pre-exposure processing module 600, 700 are referred to as a first direction 12 and a direction perpendicular to the first direction 12 as viewed from above is referred to as a second direction 14 and a direction in which the first direction 12 and the second And a direction perpendicular to the direction 14 is referred to as a third direction 16.

The substrate W is moved in a state accommodated in the cassette 20. At this time, the cassette 20 has a structure that can be sealed from the outside. For example, as the cassette 20, a front open unified pod (FOUP) having a door at the front can be used.

Hereinafter, the load port 100, the index module 200, the first buffer module 300, the application and development module 400, the second buffer module 500, the pre-exposure processing module 600, 700 will be described in detail.

The load port 100 has a mounting table 120 on which the cassette 20 accommodating the substrates W is placed. A plurality of mounts 120 are provided, and the mounts 200 are arranged in a line along the second direction 14. [ In Fig. 2, four placement tables 120 are provided.

The index module 200 transfers the substrate W between the cassette 20 placed on the table 120 of the load port 100 and the first buffer module 300. The index module 200 has a frame 210, an index robot 220, and a guide rail 230. The frame 210 is provided generally in the shape of an inner rectangular parallelepiped and is disposed between the load port 100 and the first buffer module 300. The frame 210 of the index module 200 may be provided at a lower height than the frame 310 of the first buffer module 300 described later. The index robot 220 and the guide rail 230 are disposed within the frame 210. The index robot 220 is moved in the first direction 12, the second direction 14 and the third direction 16 so that the hand 221 that directly handles the substrate W can be moved and rotated in the first direction 12, the second direction 14, . The index robot 220 has a hand 221, an arm 222, a support 223, and a pedestal 224. The hand 221 is fixed to the arm 222. The arm 222 is provided with a stretchable structure and a rotatable structure. The support base 223 is disposed along the third direction 16 in the longitudinal direction. The arm 222 is coupled to the support 223 to be movable along the support 223. The support 223 is fixedly coupled to the pedestal 224. The guide rails 230 are provided so that their longitudinal direction is arranged along the second direction 14. The pedestal 224 is coupled to the guide rail 230 so as to be linearly movable along the guide rail 230. Further, although not shown, the frame 210 is further provided with a door opener for opening and closing the door of the cassette 20.

The first buffer module 300 has a frame 310, a first buffer 320, a second buffer 330, a cooling chamber 350, and a first buffer robot 360. The frame 310 is provided in the shape of an inner rectangular parallelepiped and is disposed between the index module 200 and the application and development module 400. The first buffer 320, the second buffer 330, the cooling chamber 350, and the first buffer robot 360 are located within the frame 310. The cooling chamber 350, the second buffer 330, and the first buffer 320 are sequentially disposed in the third direction 16 from below. The second buffer 330 and the cooling chamber 350 are located at a height corresponding to the coating module 401 of the coating and developing module 400 described later and the coating and developing module 400 at a height corresponding to the developing module 402. [ The first buffer robot 360 is spaced apart from the second buffer 330, the cooling chamber 350 and the first buffer 320 by a predetermined distance in the second direction 14.

The first buffer 320 and the second buffer 330 temporarily store a plurality of substrates W, respectively. The second buffer 330 has a housing 331 and a plurality of supports 332. The supports 332 are disposed within the housing 331 and are provided spaced apart from each other in the third direction 16. One substrate W is placed on each support 332. The housing 331 is constructed so that the index robot 220, the first buffer robot 360 and the developing robot 482 of the developing module 402 described later mount the substrate W on the support 332 in the housing 331 (Not shown) in the direction in which the index robot 220 is provided, in the direction in which the first buffer robot 360 is provided, and in the direction in which the developing robot 482 is provided, so that the developing robot 482 can carry it in or out. The first buffer 320 has a structure substantially similar to that of the second buffer 330. The housing 321 of the first buffer 320 has an opening in a direction in which the first buffer robot 360 is provided and in a direction in which the application unit robot 432 located in the application module 401 described later is provided. The number of supports 322 provided in the first buffer 320 and the number of supports 332 provided in the second buffer 330 may be the same or different. According to one example, the number of supports 332 provided in the second buffer 330 may be greater than the number of supports 322 provided in the first buffer 320.

The first buffer robot 360 transfers the substrate W between the first buffer 320 and the second buffer 330. The first buffer robot 360 has a hand 361, an arm 362, and a support base 363. The hand 361 is fixed to the arm 362. The arm 362 is provided in a stretchable configuration so that the hand 361 is movable along the second direction 14. The arm 362 is coupled to the support 363 so as to be linearly movable along the support 363 in the third direction 16. The support base 363 has a length extending from a position corresponding to the second buffer 330 to a position corresponding to the first buffer 320. The support member 363 may be provided longer in the upward or downward direction. The first buffer robot 360 may be provided so that the hand 361 is simply driven in two directions along the second direction 14 and the third direction 16.

The cooling chamber 350 cools the substrate W, respectively. The cooling chamber 350 has a housing 351 and a cooling plate 352. The cooling plate 352 has an upper surface on which the substrate W is placed and a cooling means 353 for cooling the substrate W. [ As the cooling means 353, various methods such as cooling with cooling water and cooling using a thermoelectric element can be used. In addition, the cooling chamber 350 may be provided with a lift pin assembly (not shown) for positioning the substrate W on the cooling plate 352. The housing 351 is provided with an index robot 220 so that the developing robot 482 provided in the index robot 220 and a developing module 402 to be described later can carry the substrate W into or out of the cooling plate 352 (Not shown) in the direction provided and the direction in which the developing robot 482 is provided. Further, the cooling chamber 350 may be provided with doors (not shown) for opening and closing the above-described opening.

The application and development module 400 performs a process of applying a photoresist on the substrate W before the exposure process and a process of developing the substrate W after the exposure process. The application and development module 400 has a generally rectangular parallelepiped shape. The coating and developing module 400 has a coating module 401 and a developing module 402. The application module 401 and the development module 402 are arranged so as to be partitioned into layers with respect to each other. According to one example, the application module 401 is located on top of the development module 402.

The application module 401 includes a process of applying a photosensitive liquid such as a photoresist to the substrate W and a heat treatment process such as heating and cooling for the substrate W before and after the resist application process. The application module 401 has a resist application chamber 410, a bake chamber 420, and a transfer chamber 430. The resist application chamber 410, the bake chamber 420, and the transfer chamber 430 are sequentially disposed along the second direction 14. [ The resist application chamber 410 and the bake chamber 420 are positioned apart from each other in the second direction 14 with the transfer chamber 430 interposed therebetween. A plurality of resist coating chambers 410 are provided, and a plurality of resist coating chambers 410 are provided in the first direction 12 and the third direction 16, respectively. In the figure, six resist coating chambers 410 are provided. A plurality of bake chambers 420 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, six bake chambers 420 are provided. Alternatively, however, the bake chamber 420 may be provided in a greater number.

The transfer chamber 430 is positioned in parallel with the first buffer 320 of the first buffer module 300 in the first direction 12. In the transfer chamber 430, a dispenser robot 432 and a guide rail 433 are positioned. The transfer chamber 430 has a generally rectangular shape. The applicator robot 432 is connected to the bake chambers 420, the resist application chambers 400, the first buffer 320 of the first buffer module 300, and the first buffer module 500 of the second buffer module 500 And transfers the substrate W between the cooling chambers 520. The guide rails 433 are arranged so that their longitudinal directions are parallel to the first direction 12. The guide rails 433 guide the applying robot 432 to move linearly in the first direction 12. The applicator robot 432 has a hand 434, an arm 435, a support 436, and a pedestal 437. The hand 434 is fixed to the arm 435. The arm 435 is provided in a stretchable configuration so that the hand 434 is movable in the horizontal direction. The support 436 is provided so that its longitudinal direction is disposed along the third direction 16. The arm 435 is coupled to the support 436 so as to be linearly movable in the third direction 16 along the support 436. The support 436 is fixedly coupled to the pedestal 437 and the pedestal 437 is coupled to the guide rail 433 so as to be movable along the guide rail 433.

The resist coating chambers 410 all have the same structure. However, the types of the photoresist used in each of the resist coating chambers 410 may be different from each other. As an example, a chemical amplification resist may be used as the photoresist. The resist application chamber 410 is provided with a substrate processing apparatus for applying a photoresist on the substrate W. [ The substrate processing apparatus 800 is subjected to a liquid coating process. FIG. 5 is a plan view showing the substrate processing apparatus of FIG. 1, and FIG. 6 is a sectional view showing the substrate processing apparatus of FIG. 5 and 6, the substrate processing apparatus 800 includes a housing 810, an airflow providing unit 820, a substrate supporting unit 830, a processing vessel 850, a lift unit 890, (840), and a controller (1400).

The housing 810 is provided in a rectangular tubular shape having a processing space 812 therein. An opening (not shown) is formed at one side of the housing 810. The opening serves as an inlet through which the substrate W is carried in and out. A door (not shown) is provided at the opening, and the door opens and closes the opening. When the substrate processing process is completed, the door is closed to seal the processing space 812 of the housing 810. An inner exhaust port 814 and an outer exhaust port 816 are formed on the lower surface of the housing 810. The airflow formed in the housing 810 is exhausted to the outside through the inner exhaust port 814 and the outer exhaust port 816. The airflow introduced into the processing vessel 850 is exhausted through the inner exhaust port 814 and the airflow provided outside the processing vessel 850 can be exhausted through the outer exhaust port 816. [

The airflow providing unit 820 forms a downward flow in the processing space 812 of the housing 810. The airflow providing unit 820 includes an airflow supply line 822, a fan 824, and a filter 826. The airflow supply line 822 is connected to the housing 810. The air flow supply line 822 supplies external clean air to the housing 810. The filter 826 filters the clean air provided from the airflow supply line 822. The filter 826 removes impurities contained in the air. The fan 824 is mounted on the upper surface of the housing 810. The fan 824 is located in a central region in the upper surface of the housing 810. The fan 824 forms a downward flow in the processing space 812 of the housing 810. When clean air is supplied to the fan 824 from the airflow supply line 822, the fan 824 supplies the clean air in the downward direction. According to one example, the fan 824 can supply air to the processing space at different flow rates in accordance with the substrate processing step.

The substrate support unit 830 supports the substrate W in the processing space 812 of the housing 810. The substrate support unit 830 rotates the substrate W. The substrate support unit 830 includes a spin chuck 832, a rotation axis 834, and a driver 836. The spin chuck 832 is provided with a substrate support member 832 for supporting the substrate. The spin chuck 832 is provided to have a circular plate shape. The substrate W contacts the upper surface of the spin chuck 832. The spin chuck 832 is provided so as to have a smaller diameter than the substrate W. [ According to one example, the spin chuck 832 can vacuum-suck the substrate W and chuck the substrate W. Alternatively, the spin chuck 832 may be provided with an electrostatic chuck for chucking the substrate W using static electricity. The spin chuck 832 can also chuck the substrate W by physical force.

The rotation shaft 834 and the driver 836 are provided as rotation drive members 834 and 836 for rotating the spin chuck 832. [ The rotating shaft 834 supports the spin chuck 832 below the spin chuck 832. The rotary shaft 834 is provided such that its longitudinal direction is directed up and down. The rotation shaft 834 is provided so as to be rotatable about its central axis. The driver 836 provides a driving force such that the rotation shaft 834 is rotated. For example, the driver 836 may be a motor capable of varying the rotational speed of the rotating shaft. The rotation drive members 834 and 836 can rotate the spin chucks 832 at different rotational speeds according to the substrate processing steps.

The processing vessel 850 is located in the processing space 812 of the housing 810. A processing vessel 850 provides for enclosing the substrate support unit 830. The processing vessel 850 is provided so that the upper portion thereof has an open cup shape. The processing vessel 850 includes an inner cup 852 and an outer cup 862.

The inner cup 852 is provided in the shape of a circular cup that surrounds the rotation shaft 834. The inner cup 852 is positioned to overlap the inner vent 814 when viewed from above. The upper surface of the inner cup 852 is provided such that its outer and inner regions are inclined at different angles from each other. According to one example, the outer region of the inner cup 852 is oriented downwardly away from the substrate support unit 830, and the inner region is oriented in an upward sloping direction away from the substrate support unit 830 Lt; / RTI > A point where the outer region and the inner region of the inner cup 852 meet with each other is vertically provided in correspondence with the side end portion of the substrate W. [ The upper surface area of the inner cup 852 is provided to be rounded. The upper surface area of the inner cup 852 is provided downwardly concave. The upper surface area of the inner cup 852 may be provided in a region where the processing liquid flows.

The outer cup 862 is provided to have a cup shape that encloses the substrate support unit 830 and the inner cup 852. The outer cup 862 has a bottom wall 864, a side wall 866, a top wall 870, and an inclined wall 870. The bottom wall 864 is provided to have a circular plate shape having a hollow. A collection line 865 is formed in the bottom wall 864. The recovery line 865 recovers the treatment liquid supplied on the substrate W. [ The treatment liquid recovered by the recovery line 865 can be reused by an external liquid recovery system. The side wall 866 is provided to have a circular tubular shape surrounding the substrate supporting unit 830. The side wall 866 extends in a vertical direction from the side edge of the bottom wall 864. The side wall 866 extends upwardly from the bottom wall 864.

The inclined wall 870 extends inward of the outer cup 862 from the top of the side wall 866. The inclined wall 870 is provided so as to approach the substrate supporting unit 830 upward. The inclined wall 870 is provided so as to have a ring shape. The upper end of the inclined wall 870 is positioned higher than the substrate W supported on the substrate supporting unit 830. [

The elevating unit 890 lifts the inner cup 852 and the outer cup 862, respectively. The elevating unit 890 includes an inside moving member 892 and an outside moving member 894. The inner moving member 892 lifts the inner cup 852 and the outer moving member 894 moves the outer cup 862 up and down.

The liquid supply unit 840 supplies the photosensitive liquid and the pretreatment liquid onto the substrate W. The liquid supply unit 840 includes a moving member 846 and a nozzle member 1000. The moving member 846 moves the nozzle member 1000 to a process position or a standby position. Here, the process position is a position where the nozzle member 1000 faces the substrate W supported by the substrate supporting unit 830, and the standby position is a position out of the process position. For example, in the process position, the nozzle member 1000 and the substrate W may be positioned so as to be vertically opposed to each other in the vertical direction.

The moving member 846 moves the nozzle member 1000 in one direction. According to one example, the moving member 846 can linearly move the nozzle member 1000 in one direction. The one direction may be a direction parallel to the first direction 12. The moving member 846 includes a guide rail 842 and an arm 844. The guide rail 842 is provided such that its longitudinal direction is directed to the horizontal direction. The guide rails 842 may have a longitudinal direction toward the first direction 12. The guide rails 842 are located on one side of the processing vessel 850. The guide rail 842 is provided with an arm 844. The arm 844 is moved to a drive member (not shown) provided in the guide rail 842. For example, the driving member may be a linear motor. The arm 844 is provided in a bar shape having a longitudinal direction perpendicular to the guide rail 842 when viewed from above. A nozzle member 1000 is provided at the bottom end of the arm 844. The nozzle member 1000 moves together with the arm 844.

7 is an enlarged perspective view of the nozzle member of Fig. 6; Fig. Referring to Fig. 7, the nozzle member 1000 discharges the photosensitive liquid and the pretreatment liquid. The nozzle member 1000 includes a support body 1220, a pretreatment nozzle 1240, and an application nozzle 1260. The support body 1220 supports the pretreatment nozzle 1240 and the application nozzle 1260 at the same time. Each of the nozzles 1240 and 1260 is provided so that the discharge port is directed downward in the vertical direction. The preprocessing nozzle 1240 and the application nozzle 1260 are arranged in a direction parallel to the moving direction of the nozzle member 1000. [ According to an example, the pretreatment nozzles 1240 and the application nozzles 1260 may be arranged in a line along one direction which is the moving direction of the nozzle member 1000. A plurality of application nozzles 1260 are provided. The plurality of application nozzles 1260 may be arranged along one direction with the pre-treatment nozzle 1240 interposed therebetween. A plurality of application nozzles 1260, a second pre-processing nozzle 1240, and a plurality of application nozzles 1260 may be arranged in a line with respect to the moving direction of the nozzle member 1000. [

The pretreatment nozzle 1240 discharges the pretreatment liquid. The pretreatment liquid may be provided in a liquid containing properties similar to those of the hydrophilic and hydrophobic photosensitizer. When the photosensitive liquid has a hydrophobic property, the pretreatment liquid may be provided as a thinner. The pretreatment liquid can increase the adhesion force between the substrate W and the photosensitive liquid.

A plurality of application nozzles 1260 discharge the photosensitive liquid. Each of the application nozzles 1260 discharges the sensitizing solution at the same flow rate. According to an example, a plurality of coating nozzles 1260 may be provided on one side of the pretreatment nozzle 1240, and a plurality of coating nozzles 1260 may be provided on the opposite side of the pretreatment nozzle 1240. The application nozzles 1260 may be arranged symmetrically in the same number on each side of the pre-treatment nozzle 1240. Each of the application nozzles 1260 can discharge a different kind of photosensitive liquid. For example, during the process of processing a single substrate W, one of the plurality of coating nozzles 1260 may discharge the photosensitive liquid. The pre-treatment nozzle 1240 has a discharge end positioned higher than the application nozzles 1260. This is to prevent the photosensitive liquid from scattering and adhering to the pretreatment nozzle 1240 while the photosensitive liquid is being discharged.

The controller 1400 controls the liquid supply unit 840 and the substrate support unit 830. The controller controls the rotation drive members 834 and 836 such that the rotational speed of the substrate W varies according to each step in accordance with the prewetting step, the liquid application step, the reflow step, and the diffusion step. The controller 1400 also controls the liquid supply unit 840 so that the pretreatment liquid is supplied before the photosensitive liquid is supplied onto the substrate W. [ According to one example, the controller 1400 may supply a pretreatment liquid onto the substrate W, and then control each nozzle so that any one of the application nozzles 1260 supplies a sensitizing solution.

Further, the controller 1400 can control the moving member 846 such that the pre-treatment liquid and the photosensitive liquid are supplied to the first supply position, which is the central region of the substrate W. For example, the first supply position may be the center of the substrate W.

Alternatively, the pretreatment liquid and the photosensitive liquid may be supplied while being moved from the first supply position to the second supply position spaced apart from the first supply position.

Next, a process of forming a liquid film on the substrate W by using the above-described substrate processing apparatus will be described. 8 is a graph showing the rotational speed of the substrate at the time of processing the substrate using the apparatus of FIG. Referring to FIG. 8, a method of forming a liquid film on the substrate W includes a pre-treatment step, a liquid application step, a reflow step, and a diffusion step. The pretreatment step, the liquid application step, the reflow step, and the diffusion step are sequentially performed.

According to the liquid film forming method of the substrate W, in the pre-processing step, the substrate W is rotated at the first speed V ₁ . The pre-treatment nozzle supplies the pretreatment liquid onto the substrate W rotated at the first speed (V ₁ ). The pretreatment liquid is supplied to the center of the substrate W. The pretreatment liquid diffuses over the entire area of the substrate W to improve the adhesion between the surface of the substrate W and the photosensitive liquid.

When the preprocessing step is completed, the liquid application step proceeds. In the liquid application step, a photosensitive liquid is supplied onto the substrate W to form a photosensitive liquid film. The liquid application step has an acceleration step and a constant velocity step. The acceleration step and the constant velocity step are performed sequentially. The sensitizing solution is continuously supplied to the center of the substrate W while the acceleration step and the constant velocity step are performed.

In the acceleration step, the rotational speed of the substrate W is accelerated from the first speed (V ₁ ) to a second speed (V ₂ ) higher than this. Accelerating step is performed during the time of arrival to be reached to the second speed from the first speed _{(V 1) (V 2)} . During the time of arrival, the velocity of the substrate W is increased to an equivalent velocity. FIG. 9 is a graph showing a change in thickness of a liquid film on a substrate due to a change in arrival time at an acceleration step when a low-viscosity photoresist is applied, FIG. 9 is a graph FIG. 3 is a graph showing a change in thickness of a liquid film on a substrate due to a change in time. FIG. 9 and 10, when the viscosity of the photosensitive liquid is larger than the reference value, the thickness of the photosensitive liquid film in the central region of the substrate W becomes larger than the thickness of the photosensitive liquid film in the edge region of the substrate W Is changed.

According to an example, when the viscosity of the photosensitive liquid is larger than the reference value, the thickness of the photosensitive liquid film in the central region of the substrate W becomes thinner as the arrival time becomes longer, and as the arrival time becomes shorter, The thickness of the film becomes thick. Therefore, when the viscosity of the photosensitive liquid is larger than the reference value, the thickness of the photosensitive liquid film can be changed in the central region of the substrate W by controlling the arrival time.

Therefore, in the case where the viscosity of the photosensitive liquid is larger than the reference value, in order to increase the thickness of the liquid film in the central region of the substrate W, the arrival time is controlled to be short and the thickness of the liquid film in the central region of the substrate W The arrival time is controlled to be long.

On the other hand, when the viscosity of the photosensitive liquid is smaller than the reference value, the thickness of the photosensitive liquid film in the edge region of the substrate W is largely changed in comparison with the thickness of the photosensitive liquid film in the central region of the substrate W as the arrival time is changed.

According to one example, when the viscosity of the photosensitive liquid is smaller than the reference value, the thickness of the photosensitive liquid film in the edge region of the substrate W becomes thicker as the arrival time becomes longer, and as the arrival time becomes shorter, The thickness of the film becomes thinner. Therefore, when the viscosity of the photosensitive liquid is smaller than the reference value, the thickness of the photosensitive liquid film can be changed in the edge region of the substrate W by controlling the arrival time.

Therefore, in the case where the viscosity of the photosensitive liquid is smaller than the reference value and the thickness of the liquid film in the edge region of the substrate W is intended to be thick, it is necessary to control the arrival time to be long and to reduce the thickness of the liquid film in the edge region of the substrate W The arrival time is controlled to be short.

For example, the reference value may be 90 cP.

In the constant velocity step, the rotation speed of the substrate W is maintained at the second velocity V ₂ for a predetermined time. According to an example, the sum of the time required for the acceleration step and the time required for the constant-speed step may have a constant value. Therefore, if the arrival time is short, the constant velocity step is relatively long, and if the arrival time is long, the constant velocity step may be relatively short.

When the liquid application step is completed, the reflow step proceeds. In the reflow step, the rotation speed of the substrate W is greatly decelerated from the second speed (V ₂ ) to the third speed (V ₃ ) which is slower than this. For example, the third velocity V ₃ may be a velocity that is slower than the first velocity V ₁ . The third time is reached, the speed (V ₃₎ from the second speed (V ₂₎ can be at a first speed (V ₁₎ in an acceleration phase is shorter than the time it reaches the second speed (V _2). Accordingly, the photosensitive liquid provided on the substrate W can be reflowed so as to move in a direction approaching the center of the substrate W. [

When the reflow step is completed, the diffusion step proceeds. In the diffusion step, the rotation speed of the substrate W is greatly increased from the third speed (V ₃ ) to the fourth speed (V ₄ ) which is faster than this. For example, the fourth speed (V ₄₎ may be faster than the second speed (V _2). The time it reaches a fourth speed (V ₄₎ from the third speed (V ₃₎ may be shorter in the first speed (V ₁₎ in an acceleration phase than the time it reaches the second speed (V _2). The photosensitive liquid provided on the substrate W can be moved in a direction away from the center of the substrate W. [

Next, a method of forming a liquid film on each of the first substrate and the second substrate using the above-described method will be described. The first liquid is supplied to the first substrate to apply the first liquid to the first substrate and the second liquid is supplied to the second substrate to apply the second liquid film.

According to one example, the first liquid has a first viscosity and the second liquid has a second viscosity which is higher than the first viscosity. The first viscosity may be lower than the reference value and the second viscosity may be higher than the reference value.

According to an embodiment, the first liquid film is supplied to the first substrate and the arrival time is adjusted to the first time in the acceleration step in the coating process to adjust the thickness of the first liquid film in the edge region of the first substrate.

The second liquid is supplied to the second substrate and the reaching time is adjusted to the second time in the acceleration step in the coating process to adjust the thickness of the second liquid film in the central region of the substrate.

According to an example, the sum of the time required for the acceleration and the constant-speed steps of the first substrate and the sum of the time required for the accelerating step and the constant-speed step for processing the second substrate can be provided equally.

According to the above-described embodiment, the coating step includes the acceleration step and the constant velocity step, and the acceleration step and the constant velocity step are sequentially performed. However, as shown in Fig. 11, only the acceleration step can be performed in the coating processing step. Coating step, the rotational speed of the substrate is reduced to the first speed (V ₁₎ when in being accelerated to the second speed (V _2), reaches a second speed (V ₂₎ as soon the third speed (V ₃₎ The reflow step can be performed.

It is also possible to accelerate the rotation speed of the substrate W from the first speed (V ₁ ) to the second speed (V ₂ ) when the liquid film is coated on the substrate, and to adjust the area thickness of the liquid film . The photosensitive liquid is supplied to the center of the substrate W at this time. However, as shown in FIG. 12, the photosensitive liquid may be supplied while moving from the center of the substrate W to a position spaced therefrom, thereby reducing the thickness of the central region of the liquid film.

1 to 4, the bake chamber 420 heat-treats the substrate W. As shown in FIG. For example, the bake chambers 420 may be formed by a prebake process for heating the substrate W to a predetermined temperature to remove organic substances and moisture on the surface of the substrate W, A soft bake process is performed after coating the substrate W on the substrate W, and a cooling process for cooling the substrate W after each heating process is performed. The bake chamber 420 has a cooling plate 421 or a heating plate 422. The cooling plate 421 is provided with a cooling means 423 such as a cooling water or a thermoelectric element. The heating plate 422 is also provided with a heating means 424, such as a hot wire or a thermoelectric element. The cooling plate 421 and the heating plate 422 may be provided in a single bake chamber 420, respectively. Optionally, some of the bake chambers 420 may include only the cooling plate 421, and the other portions may include only the heating plate 422.

The developing module 402 includes a developing process for supplying a developing solution to obtain a pattern on the substrate W to remove a part of the photoresist and a heat treatment process such as heating and cooling performed on the substrate W before and after the developing process . The development module 402 has a development chamber 460, a bake chamber 470, and a transfer chamber 480. The development chamber 460, the bake chamber 470, and the transfer chamber 480 are sequentially disposed along the second direction 14. The development chamber 460 and the bake chamber 470 are positioned apart from each other in the second direction 14 with the transfer chamber 480 therebetween. A plurality of developing chambers 460 are provided, and a plurality of developing chambers 460 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, six development chambers 460 are provided. A plurality of bake chambers 470 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, six bake chambers 470 are provided. Alternatively, however, the bake chamber 470 can be provided in greater numbers.

The transfer chamber 480 is positioned in parallel with the second buffer 330 of the first buffer module 300 in the first direction 12. In the transfer chamber 480, the developing robot 482 and the guide rail 483 are positioned. The delivery chamber 480 has a generally rectangular shape. The development robot 482 is connected to the bake chambers 470 and the development chambers 460 and the second buffer 330 and the cooling chamber 350 of the first buffer module 300 and the second buffer module 500, And the second cooling chamber 540 of the second cooling chamber 540. The guide rail 483 is arranged such that its longitudinal direction is parallel to the first direction 12. The guide rail 483 guides the developing robot 482 to linearly move in the first direction 12. The developing sub-robot 482 has a hand 484, an arm 485, a supporting stand 486, and a pedestal 487. The hand 484 is fixed to the arm 485. The arm 485 is provided in a stretchable configuration to allow the hand 484 to move in a horizontal direction. The support 486 is provided so that its longitudinal direction is disposed along the third direction 16. The arm 485 is coupled to the support 486 such that it is linearly movable along the support 486 in the third direction 16. The support table 486 is fixedly coupled to the pedestal 487. The pedestal 487 is coupled to the guide rail 483 so as to be movable along the guide rail 483.

The development chambers 460 all have the same structure. However, the types of developers used in the respective developing chambers 460 may be different from each other. The development chamber 460 removes a region of the photoresist on the substrate W where light is irradiated. At this time, the area of the protective film irradiated with the light is also removed. Depending on the type of selectively used photoresist, only the areas of the photoresist and protective film that are not irradiated with light can be removed.

The development chamber 460 has a container 461, a support plate 462, and a nozzle 463. The container 461 has a cup shape with its top opened. The support plate 462 is located in the container 461 and supports the substrate W. The support plate 462 is rotatably provided. The nozzle 463 supplies the developer onto the substrate W placed on the support plate 462. The nozzle 463 has a circular tube shape and can supply developer to the center of the substrate W. [ Alternatively, the nozzle 463 may have a length corresponding to the diameter of the substrate W, and the discharge port of the nozzle 463 may be provided with a slit. Further, the developing chamber 460 may further be provided with a nozzle 464 for supplying a cleaning liquid such as deionized water to clean the surface of the substrate W to which the developer is supplied.

The bake chamber 470 heat-treats the substrate W. For example, the bake chambers 470 may include a post-bake process for heating the substrate W before the development process is performed, a hard bake process for heating the substrate W after the development process is performed, And a cooling step for cooling the substrate W is performed. The bake chamber 470 has a cooling plate 471 or a heating plate 472. The cooling plate 471 is provided with a cooling means 473 such as a cooling water or a thermoelectric element. Or the heating plate 472 is provided with a heating means 474 such as a hot wire or a thermoelectric element. The cooling plate 471 and the heating plate 472 may be provided in one bake chamber 470, respectively. Optionally, some of the bake chambers 470 may have only a cooling plate 471, while the other may have only a heating plate 472. [

As described above, in the application and development module 400, the application module 401 and the development module 402 are provided to be separated from each other. In addition, the application module 401 and the development module 402 may have the same chamber arrangement as viewed from above.

The second buffer module 500 is provided as a path through which the substrate W is transferred between the coating and developing module 400 and the pre- and post-exposure processing module 600. The second buffer module 500 performs a predetermined process on the substrate W such as a cooling process or an edge exposure process. The second buffer module 500 includes a frame 510, a buffer 520, a first cooling chamber 530, a second cooling chamber 540, an edge exposure chamber 550, and a second buffer robot 560 I have. The frame 510 has a rectangular parallelepiped shape. The buffer 520, the first cooling chamber 530, the second cooling chamber 540, the edge exposure chamber 550, and the second buffer robot 560 are located within the frame 510. The buffer 520, the first cooling chamber 530, and the edge exposure chamber 550 are disposed at a height corresponding to the application module 401. The second cooling chamber 540 is disposed at a height corresponding to the development module 402. The buffer 520, the first cooling chamber 530, and the second cooling chamber 540 are sequentially arranged in a row along the third direction 16. The buffer 520 is disposed along the first direction 12 with the transfer chamber 430 of the application module 401. [ The edge exposure chamber 550 is spaced a certain distance in the second direction 14 from the buffer 520 or the first cooling chamber 530.

The second buffer robot 560 carries the substrate W between the buffer 520, the first cooling chamber 530, and the edge exposure chamber 550. A second buffer robot 560 is positioned between the edge exposure chamber 550 and the buffer 520. The second buffer robot 560 may be provided in a structure similar to that of the first buffer robot 360. The first cooling chamber 530 and the edge exposure chamber 550 perform a subsequent process on the substrates W that have been processed in the application module 401. The first cooling chamber 530 cools the substrate W processed in the application module 401. The first cooling chamber 530 has a structure similar to the cooling chamber 350 of the first buffer module 300. The edge exposure chamber 550 exposes its edge to the substrates W that have undergone the cooling process in the first cooling chamber 530. [ The buffer 520 temporarily stores the substrate W before the substrates W processed in the edge exposure chamber 550 are transported to the preprocessing module 601 described later. The second cooling chamber 540 cools the substrates W before the processed substrates W are transferred to the developing module 402 in the post-processing module 602 described later. The second buffer module 500 may further have a buffer added to the height corresponding to the development module 402. In this case, the substrates W processed in the post-processing module 602 may be temporarily stored in the added buffer and then conveyed to the developing module 402.

The pre- and post-exposure processing module 600 may process a process of applying a protective film for protecting the photoresist film applied to the substrate W during liquid immersion exposure, when the exposure apparatus 900 performs the liquid immersion exposure process. In addition, the pre- and post-exposure processing module 600 may perform a process of cleaning the substrate W after exposure. In addition, when the coating process is performed using the chemically amplified resist, the pre- and post-exposure processing module 600 can process the post-exposure bake process.

The pre-exposure post-processing module 600 has a pre-processing module 601 and a post-processing module 602. The pre-processing module 601 performs a process of processing the substrate W before the exposure process, and the post-process module 602 performs a process of processing the substrate W after the exposure process. The pre-processing module 601 and the post-processing module 602 are arranged so as to be partitioned into layers with respect to each other. According to one example, the preprocessing module 601 is located on top of the post-processing module 602. The preprocessing module 601 is provided at the same height as the application module 401. The post-processing module 602 is provided at the same height as the developing module 402. The pretreatment module 601 has a protective film application chamber 610, a bake chamber 620, and a transfer chamber 630. The protective film application chamber 610, the transfer chamber 630, and the bake chamber 620 are sequentially disposed along the second direction 14. The protective film application chamber 610 and the bake chamber 620 are positioned apart from each other in the second direction 14 with the transfer chamber 630 therebetween. A plurality of protective film application chambers 610 are provided and are arranged along the third direction 16 to form layers. Alternatively, a plurality of protective film application chambers 610 may be provided in the first direction 12 and the third direction 16, respectively. A plurality of bake chambers 620 are provided and are disposed along the third direction 16 to form layers. Alternatively, a plurality of bake chambers 620 may be provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 630 is positioned in parallel with the first cooling chamber 530 of the second buffer module 500 in the first direction 12. In the transfer chamber 630, a pre-processing robot 632 is located. The transfer chamber 630 has a generally square or rectangular shape. The preprocessing robot 632 is connected between the protective film application chambers 610, the bake chambers 620, the buffer 520 of the second buffer module 500 and the first buffer 720 of the interface module 700, The substrate W is transferred. The preprocessing robot 632 has a hand 633, an arm 634, and a support 635. The hand 633 is fixed to the arm 634. The arm 634 is provided with a retractable structure and a rotatable structure. The arm 634 is coupled to the support 635 so as to be linearly movable along the support 635 in the third direction 16.

The protective film applying chamber 610 applies a protective film for protecting the resist film on the substrate W during liquid immersion exposure. The protective film application chamber 610 has a housing 611, a support plate 612, and a nozzle 613. The housing 611 has a cup shape with its top opened. The support plate 612 is located in the housing 611 and supports the substrate W. [ The support plate 612 is rotatably provided. The nozzle 613 supplies a protective liquid for forming a protective film onto the substrate W placed on the supporting plate 612. The nozzle 613 has a circular tube shape and can supply the protective liquid to the center of the substrate W. [ Alternatively, the nozzle 613 may have a length corresponding to the diameter of the substrate W, and the discharge port of the nozzle 613 may be provided with a slit. In this case, the support plate 612 may be provided in a fixed state. The protective liquid includes a foamable material. The protective liquid may be a photoresist and a material having a low affinity for water. For example, the protective liquid may contain a fluorine-based solvent. The protective film application chamber 610 supplies the protective liquid to the central region of the substrate W while rotating the substrate W placed on the support plate 612.

The bake chamber 620 heat-treats the substrate W coated with the protective film. The bake chamber 620 has a cooling plate 621 or a heating plate 622. The cooling plate 621 is provided with a cooling means 623 such as a cooling water or a thermoelectric element. Or heating plate 622 is provided with a heating means 624, such as a hot wire or a thermoelectric element. The heating plate 622 and the cooling plate 621 may be provided in a single bake chamber 620, respectively. Optionally, some of the bake chambers 620 may have only the heating plate 622, while others may only have the cooling plate 621.

The post-processing module 602 has a cleaning chamber 660, a post-exposure bake chamber 670, and a delivery chamber 680. The cleaning chamber 660, the transfer chamber 680, and the post-exposure bake chamber 670 are sequentially disposed along the second direction 14. Accordingly, the cleaning chamber 660 and the post-exposure baking chamber 670 are positioned apart from each other in the second direction 14 with the transfer chamber 680 therebetween. A plurality of cleaning chambers 660 are provided and may be disposed along the third direction 16 to form layers. Alternatively, a plurality of cleaning chambers 660 may be provided in the first direction 12 and the third direction 16, respectively. A plurality of post-exposure bake chambers 670 are provided and may be disposed along the third direction 16 to form layers. Alternatively, a plurality of post-exposure bake chambers 670 may be provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 680 is positioned in parallel with the second cooling chamber 540 of the second buffer module 500 in the first direction 12 as viewed from above. The transfer chamber 680 has a generally square or rectangular shape. A post processing robot 682 is located in the transfer chamber 680. The post-processing robot 682 is connected to the cleaning chambers 660, post-exposure bake chambers 670, the second cooling chamber 540 of the second buffer module 500, and the second And transfers the substrate W between the buffers 730. The postprocessing robot 682 provided in the postprocessing module 602 may be provided with the same structure as the preprocessing robot 632 provided in the preprocessing module 601. [

The cleaning chamber 660 cleans the substrate W after the exposure process. The cleaning chamber 660 has a housing 661, a support plate 662, and a nozzle 663. The housing 661 has a cup shape with an open top. The support plate 662 is located in the housing 661 and supports the substrate W. [ The support plate 662 is rotatably provided. The nozzle 663 supplies the cleaning liquid onto the substrate W placed on the support plate 662. As the cleaning liquid, water such as deionized water may be used. The cleaning chamber 660 supplies the cleaning liquid to the central region of the substrate W while rotating the substrate W placed on the support plate 662. Optionally, while the substrate W is rotating, the nozzle 663 may move linearly or rotationally from the central region of the substrate W to the edge region.

The post-exposure bake chamber 670 heats the substrate W subjected to the exposure process using deep UV light. The post-exposure baking step heats the substrate W and amplifies the acid generated in the photoresist by exposure to complete the property change of the photoresist. The post-exposure bake chamber 670 has a heating plate 672. The heating plate 672 is provided with a heating means 674 such as a hot wire or a thermoelectric element. The post-exposure bake chamber 670 may further include a cooling plate 671 therein. The cooling plate 671 is provided with a cooling means 673 such as a cooling water or a thermoelectric element. Further, a bake chamber having only the cooling plate 671 may be further provided.

As described above, the pre-processing module 601 and the post-processing module 602 in the pre-exposure processing module 600 are provided to be completely separated from each other. The transfer chamber 630 of the preprocessing module 601 and the transfer chamber 680 of the postprocessing module 602 are provided in the same size and can be provided so as to completely overlap each other when viewed from above. Further, the protective film application chamber 610 and the cleaning chamber 660 may be provided to have the same size as each other and be provided so as to completely overlap with each other when viewed from above. Further, the bake chamber 620 and the post-exposure bake chamber 670 are provided in the same size, and can be provided so as to completely overlap each other when viewed from above.

The interface module 700 transfers the substrate W between the exposure pre- and post-processing module 600 and the exposure apparatus 900. The interface module 700 has a frame 710, a first buffer 720, a second buffer 730, and an interface robot 740. The first buffer 720, the second buffer 730, and the interface robot 740 are located within the frame 710. The first buffer 720 and the second buffer 730 are spaced apart from each other by a predetermined distance and are stacked on each other. The first buffer 720 is disposed higher than the second buffer 730. The first buffer 720 is positioned at a height corresponding to the preprocessing module 601 and the second buffer 730 is positioned at a height corresponding to the postprocessing module 602. The first buffer 720 is arranged in a line along the first direction 12 with the transfer chamber 630 of the preprocessing module 601 while the second buffer 730 is arranged in the postprocessing module 602, Are arranged in a line along the first direction 12 with the transfer chamber 630 of the transfer chamber 630. [

The interface robot 740 is spaced apart from the first buffer 720 and the second buffer 730 in the second direction 14. The interface robot 740 carries the substrate W between the first buffer 720, the second buffer 730 and the exposure apparatus 900. The interface robot 740 has a structure substantially similar to that of the second buffer robot 560.

The first buffer 720 temporarily stores the substrates W processed in the preprocessing module 601 before they are transferred to the exposure apparatus 900. The second buffer 730 temporarily stores the processed substrates W in the exposure apparatus 900 before they are transferred to the post-processing module 602. The first buffer 720 has a housing 721 and a plurality of supports 722. The supports 722 are disposed within the housing 721 and are provided spaced apart from each other in the third direction 16. One substrate W is placed on each support 722. The housing 721 is movable in the direction in which the interface robot 740 is provided and in the direction in which the interface robot 740 and the preprocessing robot 632 transfer the substrate W to and from the support table 722, 632 are provided with openings (not shown) in the direction in which they are provided. The second buffer 730 has a structure substantially similar to that of the first buffer 720. However, the housing 4531 of the second buffer 730 has an opening (not shown) in the direction in which the interface robot 740 is provided and in a direction in which the postprocessing robot 682 is provided. Only the buffers and robots can be provided as described above without providing a chamber for performing a predetermined process on the substrate W in the interface module.

Next, an example of performing the process using the above-described substrate processing apparatus 1 will be described.

The cassette 20 containing the substrates W is placed on the mount 120 of the load port 100. The door of the cassette 20 is opened by the door opener. The index robot 220 removes the substrate W from the cassette 20 and transfers it to the second buffer 330.

The first buffer robot 360 carries the substrate W stored in the second buffer 330 to the first buffer 320. The application robot 432 removes the substrate W from the first buffer 320 and transfers the wafer W to the bake chamber 420 of the application module 401. The bake chamber 420 sequentially performs a pre-bake and a cooling process. The application part robot 432 removes the substrate W from the bake chamber 420 and transfers it to the resist application chamber 410. The resist coating chamber 410 applies a photoresist on the substrate W. [ Then, when the photoresist is applied onto the substrate W, the application part robot 432 carries the substrate W from the resist application chamber 410 to the bake chamber 420. The bake chamber 420 performs a soft bake process on the substrate W.

The application robot 432 removes the substrate W from the bake chamber 420 and transfers the substrate W to the first cooling chamber 530 of the second buffer module 500. A cooling process is performed on the substrate W in the first cooling chamber 530. [ The substrate W processed in the first cooling chamber 530 is transported to the edge exposure chamber 550 by the second buffer robot 560. The edge exposure chamber 550 performs a process of exposing an edge region of the substrate W. [ The substrate W having been processed in the edge exposure chamber 550 is transferred to the buffer 520 by the second buffer robot 560.

The preprocessing robot 632 takes the substrate W from the buffer 520 and transfers it to the protective film application chamber 610 of the preprocessing module 601. The protective film applying chamber 610 applies a protective film on the substrate W. [ Thereafter, the pre-processing robot 632 carries the substrate W from the protective film application chamber 610 to the bake chamber 620. The bake chamber 620 performs a heat treatment on the substrate W such as heating and cooling.

The preprocessing robot 632 takes the substrate W out of the bake chamber 620 and transfers it to the first buffer 720 of the interface module 700. The interface robot 740 carries the substrate W from the first buffer 720 to the exposure apparatus 900. The exposure apparatus 900 performs an exposure process, for example, a liquid immersion exposure process, on the process surface of the substrate W. When the exposure process for the substrate W is completed in the exposure apparatus 900, the interface robot 740 carries the substrate W from the exposure apparatus 900 to the second buffer 730.

The postprocessing robot 682 takes the substrate W from the second buffer 730 and transfers it to the cleaning chamber 660 of the postprocessing module 602. The cleaning chamber 660 supplies a cleaning liquid to the surface of the substrate W to perform a cleaning process. After the cleaning of the substrate W using the cleaning liquid is completed, the post-processing robot 682 immediately removes the substrate W from the cleaning chamber 660 and transports the substrate W to the post-exposure bake chamber 670. The cleaning liquid adhered on the substrate W is removed by heating the substrate W in the heating plate 672 of the post-exposure bake chamber 670 while the acid generated in the photoresist is amplified, The property change of the resist is completed. The post-processing robot 682 carries the substrate W from the post-exposure baking chamber 670 to the second cooling chamber 540 of the second buffer module 500. Cooling of the substrate W in the second cooling chamber 540 is performed.

The developing robot 482 takes the substrate W from the second cooling chamber 540 and transfers it to the bake chamber 470 of the developing module 402. [ The bake chamber 470 sequentially performs post bake and cooling processes. The developing sub-robot 482 takes the substrate W from the bake chamber 470 and transfers it to the developing chamber 460. The development chamber 460 supplies a developer onto the substrate W to perform a development process. The developing robot 482 carries the substrate W from the developing chamber 460 to the bake chamber 470. [ The bake chamber 470 performs a hard bake process on the substrate W.

The development robot 482 takes the substrate W from the bake chamber 470 and transfers it to the cooling chamber 350 of the first buffer module 300. [ The cooling chamber 350 performs a process of cooling the substrate W. [ The index robot 360 carries the substrate W from the cooling chamber 350 to the cassette 20. The development robot 482 removes the substrate W from the bake chamber 470 and transports the substrate W to the second buffer 330 of the first buffer module 300, 20). ≪ / RTI >

810: Housing 820: Air flow providing unit
830: substrate support unit 840: liquid supply unit
850: processing vessel 890: elevating unit
1400:

Claims (23)

A method for liquid processing a substrate,
And a liquid applying step of supplying a photosensitive liquid onto the rotating substrate and applying a photosensitive liquid onto the substrate,
Wherein the liquid application step includes an acceleration step of accelerating the rotation speed of the substrate from the first speed to the second speed while the photosensitive liquid is supplied,
Wherein control of the thickness of the photosensitive liquid along the region of the substrate is performed by controlling a time of arrival at which the second speed is reached at the first speed in accordance with the viscosity of the photosensitive liquid. The method according to claim 1,
Wherein the photosensitive liquid includes a first liquid supplied to the first substrate and having a first viscosity and a second liquid supplied to the second substrate and having a second viscosity different from the first viscosity,
Wherein the amount of change in thickness of each region between the first liquid film by the first liquid and the second liquid film by the second liquid is controlled differently according to the control of the arrival time. 3. The method of claim 2,
Wherein the liquid application step further comprises an equal-speed step of maintaining the second speed for a predetermined time while the photosensitive liquid is supplied after the acceleration step. The method of claim 3,
Wherein the acceleration step comprises:
Wherein the time of arrival at the time of forming the first liquid film is performed for a first time,
Wherein the time of arrival when forming the second liquid film is performed for a second time,
Wherein the sum of the time required for the acceleration step and the time required for the constant velocity step in processing the first substrate is equal to the sum of the time required for the acceleration step and the constant velocity step in processing the second substrate. The method according to claim 1,
Wherein the first viscosity has a viscosity lower than the reference value,
And increasing the reaching time when the thickness of the liquid film is to be increased in the edge region of the substrate. The method according to claim 1,
Wherein the first viscosity has a viscosity lower than the reference value,
And when the thickness of the liquid film is to be reduced in the edge region of the substrate, the reaching time is shortened. The method according to claim 1,
Wherein the second viscosity has a viscosity higher than the reference value,
And when the thickness of the liquid film is to be increased in the central region of the substrate, the arrival time is shortened. The method according to claim 1,
Wherein the second viscosity has a viscosity higher than the reference value,
And when the thickness of the liquid film is to be reduced in the central region of the substrate, the reaching time is increased. 5. The method according to any one of claims 2 to 4,
Wherein the first viscosity is less than the second viscosity,
Wherein the arrival time when supplying the first liquid to the first substrate is larger than the arrival time when supplying the second liquid to the second substrate. 5. The method according to any one of claims 2 to 4,
Wherein the first viscosity is less than the second viscosity,
Wherein the reaching time when supplying the first liquid to the first substrate is smaller than the reaching time when supplying the second liquid to the second substrate. A method for liquid processing a substrate,
A liquid applying step of supplying a photosensitive liquid onto the rotating substrate and applying a photosensitive liquid onto the substrate;
And a reflow step of stopping the supply of the photosensitive liquid and rotating the substrate to reflow the photosensitive liquid applied on the substrate on the substrate,
Wherein the liquid application step includes an acceleration step of accelerating the rotation speed of the substrate from the first speed to the second speed while the photosensitive liquid is supplied,
Wherein the photosensitive liquid includes a first liquid having a first viscosity and a second liquid having a second viscosity,
Wherein the acceleration step is performed for a first time when the first liquid is applied to the first substrate for a first time when the first liquid reaches the second speed at the first speed and when the second liquid is applied to the second substrate, 1 < / RTI > speed is reached for a second time,
The first time and the second time being different from each other,
Wherein the first viscosity and the second viscosity are different. 12. The method of claim 11,
Wherein the liquid application step further comprises an equal-speed step of maintaining the second speed for a predetermined time while the photosensitive liquid is supplied after the acceleration step. 13. The method of claim 12,
Wherein the sum of the time required for the acceleration step and the time required for the constant velocity step in processing the first substrate is equal to the sum of the time required for the acceleration step and the constant velocity step in processing the second substrate. 14. The method according to any one of claims 11 to 13,
And controlling the first time and the second time to adjust different amounts of change in thickness of each region between the first liquid film by the first liquid and the second liquid film by the second liquid. 12. The method of claim 11,
Wherein the first viscosity has a viscosity lower than the reference value,
Wherein the first time is elongated when the thickness of the liquid film is to be increased in the edge region of the substrate. 12. The method of claim 11,
Wherein the first viscosity has a viscosity lower than the reference value,
Wherein the first time is shortened when the thickness of the liquid film is to be reduced in the edge region of the substrate. 12. The method of claim 11,
Wherein the second viscosity has a viscosity higher than the reference value,
Wherein the second time is shortened when the thickness of the liquid film is to be increased in the central region of the substrate. 12. The method of claim 11,
Wherein the second viscosity has a viscosity higher than the reference value,
And when the thickness of the liquid film is to be reduced in the central region of the substrate, the second time is lengthened. A method of forming a liquid film on a substrate,
Supplying a photosensitive liquid onto the substrate, applying the photosensitive liquid onto the substrate,
And accelerating the substrate at a first speed to a second speed while the photoresist is being supplied to the substrate,
And adjusting a reaching time to reach the second speed at the first speed to adjust the thickness of the liquid film of the photosensitive liquid according to the area of the substrate. 20. The method of claim 19,
And controlling the arrival time to adjust the thickness of the liquid film in a central region of the substrate when the photosensitive liquid has a viscosity higher than a reference value. 20. The method of claim 19,
Wherein the thickness of the liquid film in the edge region of the substrate is controlled by controlling the arrival time when the photosensitive liquid has a viscosity lower than a reference value. 22. The method according to any one of claims 19 to 21,
The method comprises:
And a constant velocity step of maintaining the substrate at the second velocity for a predetermined time after the acceleration step while the photosensitive liquid is supplied to the substrate. 23. The method of claim 22,
The method comprises:
A pretreatment step of rotating the substrate at the first speed and supplying a pretreatment liquid onto the substrate before applying the sensitizing solution;
A step of stopping the supply of the photosensitive liquid after the application of the photosensitive liquid, rotating the substrate at a third speed slower than the first speed, reflowing the substrate to reflow the photosensitive liquid applied on the substrate ≪ / RTI >

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