KR20190016748A - Apparatus and Method for treating substrate - Google Patents

Abstract

The present invention provides a liquid processing apparatus and a liquid processing method for a substrate. The liquid processing apparatus for a substrate includes: a support plate supporting a plate; a rotation driving member rotating the support plate; a cleaning nozzle discharging a cleaning liquid; a nozzle member forming a liquid film on the substrate supported on a substrate support unit; a moving member moving the cleaning nozzle in a vertical direction; a measuring member measuring a thickness of the liquid film formed on the substrate; and a controller controlling the rotation driving member or the moving member based on a measured value measured by the measuring member, thereby constantly maintaining the thickness of the liquid film by changing the rotation speed of the substrate.

Description

[0001] APPARATUS AND METHOD FOR TREATING SUBSTRATE [0002]

The present invention relates to an apparatus and a method for liquid-treating a substrate.

Various processes such as photolithography, etching, ashing, thin film deposition, and cleaning processes are performed for manufacturing semiconductor devices and flat panel display panels. Among these processes, the photolithography process sequentially performs the application, exposure, and development steps. The coating step is a step of applying a photosensitive liquid such as a resist to the surface of the substrate. The exposure process is a process for exposing a circuit pattern on a substrate having a photosensitive film formed thereon. The developing step is a step of selectively developing the exposed region of the substrate.

Generally, the developing process includes a developer supplying step and a rinsing liquid supplying step. The developing solution supplying step is a step of supplying the developing solution onto the substrate, and the rinsing solution supplying step is a step of supplying the rinsing solution onto the substrate. In the developing solution supplying step, the developing solution removes the exposed area, and in the rinsing solution supplying step, the process by-products generated in the developing solution supplying step and the residual developing solution are rinsed. However, it is very difficult to remove process byproducts as the patterns are miniaturized.

Recently, it has been proposed to supply the rinse liquid as a mist type in order to solve this problem. However, when the rinsing liquid is supplied in a mist manner, a chasing is applied to the substrate W by the impact force of the rinsing liquid as shown in Fig. 1, thereby causing a phenomenon that the pattern P is collapsed. On the contrary, there is a problem that the cleansing efficiency of the substrate W is lowered because the force is not transmitted sufficiently.

An object of the present invention is to provide an apparatus and a method that can improve the cleaning efficiency of residues of a substrate during development processing of the substrate.

Another object of the present invention is to provide an apparatus and a method capable of minimizing an impact on a pattern when a liquid is supplied in a mist manner.

Another object of the present invention is to provide an apparatus and a method that can sufficiently transfer the driving force of a liquid to a substrate when the liquid is supplied in a mist manner.

An embodiment of the present invention provides an apparatus and a method for liquid-treating a substrate. An apparatus for performing a liquid processing of a substrate includes a support plate for supporting the substrate, a rotation driving member for rotating the support plate, and a cleaning nozzle for discharging the cleaning liquid, the nozzle member for forming a liquid film on the substrate supported on the substrate support unit , A moving member for moving the cleaning nozzle in the vertical direction, a measuring member for measuring a thickness of the liquid film formed on the substrate, and a controller for controlling the rotation driving member or the moving member, based on the measured value measured by the measuring member, .

The controller may control the rotation driving member based on the measured value. The controller may control the rotation driver to increase the rotation speed of the substrate when the measured value is larger than the reference value and decrease the rotation speed of the substrate when the measured value is lower than the reference value.

The moving member includes a vertical driver for adjusting a relative height of the nozzle with respect to the substrate supported on the support plate, and the controller can control the vertical driver based on the measured value. Wherein the controller is configured to increase the relative height of the cleaning nozzle relative to the substrate if the measured value is greater than a reference value and to decrease the relative height of the cleaning nozzle relative to the substrate when the measured value is less than the reference value, Can be controlled.

Wherein the nozzle member further comprises a rinsing nozzle for discharging the rinsing liquid so as to form a liquid film on the substrate supported by the substrate supporting unit, wherein the rinsing nozzle discharges the rinsing liquid in a mist manner, .

The nozzle member may further include an arm for supporting the cleaning nozzle, and the measuring member may be installed on the arm. The cleaning nozzle can discharge the cleaning liquid in a mist manner.

The nozzle driver may further include a horizontal driver for moving the arm in a horizontal direction, and the controller may control the horizontal driver such that a discharge area of the cleaning liquid is moved between a center of the substrate and an edge area.

A method of liquid processing a substrate includes the steps of discharging a rinsing liquid onto the rotating substrate to form a liquid film of the rinsing liquid on the substrate and discharging a cleaning liquid onto the liquid film of the rotating substrate to clean the substrate, The thickness of the liquid film is measured at the time of discharging the cleaning liquid, and the process conditions are changed based on the measured values.

The process conditions may include a relative height of the cleaning nozzle to the substrate. If the measured value is greater than the reference value, the rotation speed of the substrate is increased, and if the measured value is lower than the reference value, the rotation speed of the substrate can be reduced.

The process conditions may include the rotational speed of the substrate. The relative height may be increased if the measured value is greater than the reference value, and may be decreased if the measured value is less than the reference value.

The cleaning liquid may be discharged in a mist manner. The rinsing liquid can be discharged and the cleaning liquid can be discharged onto the liquid film when the liquid film is formed.

When the liquid film is formed, the cleaning liquid may be discharged together with the rinsing liquid. The cleaning liquid and the rinsing liquid may be the same liquid.

According to the embodiment of the present invention, the cleaning liquid is supplied onto the liquid film formed on the substrate, and the thickness of the liquid film can be kept constant by changing the rotational speed of the substrate.

According to the embodiment of the present invention, the cleaning liquid is supplied onto the liquid film formed on the substrate, and the amount of the impulse applied to the substrate can be controlled to be constant by changing the supply height of the cleaning liquid.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a substrate that has been rinsed conventionally.
2 is a top view of a substrate processing facility according to an embodiment of the present invention.
3 is a cross-sectional view of the facility of FIG. 2 viewed in the AA direction.
Fig. 4 is a cross-sectional view of the facility of Fig. 2 viewed from the BB direction.
5 is a cross-sectional view of the installation of FIG.
Fig. 6 is a plan view showing the substrate processing apparatus of Fig. 2;
7 is a cross-sectional view showing the substrate processing apparatus of FIG.
Fig. 8 is a perspective view showing the first nozzle member of Fig. 6; Fig.
FIG. 9 is a cross-sectional view showing the second nozzle member of FIG. 6;
10 is a flowchart showing a process of processing a substrate using the apparatus of FIG.
FIGS. 11 to 13 are views showing a process of processing a substrate using the apparatus of FIG.
14 is a view showing another embodiment of the substrate processing process of FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

The facilities of this embodiment can be used to perform a photolithography process on a substrate such as a semiconductor wafer or a flat panel display panel. In particular, the apparatus of this embodiment can be used to perform a developing process with respect to a substrate connected to an exposure apparatus. However, the present embodiment is not limited thereto, and can be applied variously as long as it is a process of liquid-processing a substrate. In this embodiment, a wafer is used as a substrate.

Hereinafter, the substrate processing apparatus of the present invention will be described with reference to FIG. 2 to FIG.

2 is a plan view of the substrate processing equipment according to the embodiment of the present invention, FIG. 3 is a view of the equipment of FIG. 2 viewed from the direction AA, FIG. 4 is a view of the equipment of FIG. 2 viewed from the BB direction, 2 is a view of the facility of FIG. 2 viewed from the CC direction.

2 to 5, the substrate processing apparatus 1 includes a load port 100, an index module 200, a first buffer module 300, a coating and developing module 400, a second buffer module 500 An exposure pre- and post-processing module 600, and an interface module 700. The load port 100, the index module 200, the first buffer module 300, the application and development module 400, the second buffer module 500, the pre-exposure processing module 600, and the interface module 700, Are sequentially arranged in one direction in a single direction.

Hereinafter, the load port 100, the index module 200, the first buffer module 300, the coating and developing module 400, the second buffer module 500, the pre-exposure processing module 600, 700 are referred to as a first direction 12 and a direction perpendicular to the first direction 12 as viewed from above is referred to as a second direction 14 and a direction in which the first direction 12 and the second And a direction perpendicular to the direction 14 is referred to as a third direction 16.

The substrate W is moved in a state accommodated in the cassette 20. At this time, the cassette 20 has a structure that can be sealed from the outside. For example, as the cassette 20, a front open unified pod (FOUP) having a door at the front can be used.

Hereinafter, the load port 100, the index module 200, the first buffer module 300, the application and development module 400, the second buffer module 500, the pre-exposure processing module 600, 700 will be described in detail.

The load port 100 has a mounting table 120 on which the cassette 20 accommodating the substrates W is placed. A plurality of mounts 120 are provided, and the mounts 200 are arranged in a line along the second direction 14. [ In Fig. 2, four placement tables 120 are provided.

The index module 200 transfers the substrate W between the cassette 20 placed on the table 120 of the load port 100 and the first buffer module 300. The index module 200 has a frame 210, an index robot 220, and a guide rail 230. The frame 210 is provided generally in the shape of an inner rectangular parallelepiped and is disposed between the load port 100 and the first buffer module 300. The frame 210 of the index module 200 may be provided at a lower height than the frame 310 of the first buffer module 300 described later. The index robot 220 and the guide rail 230 are disposed within the frame 210. The index robot 220 is moved in the first direction 12, the second direction 14 and the third direction 16 so that the hand 221 that directly handles the substrate W can be moved and rotated in the first direction 12, the second direction 14, . The index robot 220 has a hand 221, an arm 222, a support 223, and a pedestal 224. The hand 221 is fixed to the arm 222. The arm 222 is provided with a stretchable structure and a rotatable structure. The support base 223 is disposed along the third direction 16 in the longitudinal direction. The arm 222 is coupled to the support 223 to be movable along the support 223. The support 223 is fixedly coupled to the pedestal 224. The guide rails 230 are provided so that their longitudinal direction is arranged along the second direction 14. The pedestal 224 is coupled to the guide rail 230 so as to be linearly movable along the guide rail 230. Further, although not shown, the frame 210 is further provided with a door opener for opening and closing the door of the cassette 20.

The first buffer module 300 has a frame 310, a first buffer 320, a second buffer 330, a cooling chamber 350, and a first buffer robot 360. The frame 310 is provided in the shape of an inner rectangular parallelepiped and is disposed between the index module 200 and the application and development module 400. The first buffer 320, the second buffer 330, the cooling chamber 350, and the first buffer robot 360 are located within the frame 310. The cooling chamber 350, the second buffer 330, and the first buffer 320 are sequentially disposed in the third direction 16 from below. The second buffer 330 and the cooling chamber 350 are located at a height corresponding to the coating module 401 of the coating and developing module 400 described later and the coating and developing module 400 at a height corresponding to the developing module 402. [ The first buffer robot 360 is spaced apart from the second buffer 330, the cooling chamber 350 and the first buffer 320 by a predetermined distance in the second direction 14.

The first buffer 320 and the second buffer 330 temporarily store a plurality of substrates W, respectively. The second buffer 330 has a housing 331 and a plurality of supports 332. The supports 332 are disposed within the housing 331 and are provided spaced apart from each other in the third direction 16. One substrate W is placed on each support 332. The housing 331 is constructed so that the index robot 220, the first buffer robot 360 and the developing robot 482 of the developing module 402 described later mount the substrate W on the support 332 in the housing 331 (Not shown) in the direction in which the index robot 220 is provided, in the direction in which the first buffer robot 360 is provided, and in the direction in which the developing robot 482 is provided, so that the developing robot 482 can carry it in or out. The first buffer 320 has a structure substantially similar to that of the second buffer 330. The housing 321 of the first buffer 320 has an opening in a direction in which the first buffer robot 360 is provided and in a direction in which the application unit robot 432 located in the application module 401 described later is provided. The number of supports 322 provided in the first buffer 320 and the number of supports 332 provided in the second buffer 330 may be the same or different. According to one example, the number of supports 332 provided in the second buffer 330 may be greater than the number of supports 322 provided in the first buffer 320.

The first buffer robot 360 transfers the substrate W between the first buffer 320 and the second buffer 330. The first buffer robot 360 has a hand 361, an arm 362, and a support base 363. The hand 361 is fixed to the arm 362. The arm 362 is provided in a stretchable configuration so that the hand 361 is movable along the second direction 14. The arm 362 is coupled to the support 363 so as to be linearly movable along the support 363 in the third direction 16. The support base 363 has a length extending from a position corresponding to the second buffer 330 to a position corresponding to the first buffer 320. The support member 363 may be provided longer in the upward or downward direction. The first buffer robot 360 may be provided so that the hand 361 is simply driven in two directions along the second direction 14 and the third direction 16.

The cooling chamber 350 cools the substrate W, respectively. The cooling chamber 350 has a housing 351 and a cooling plate 352. The cooling plate 352 has an upper surface on which the substrate W is placed and a cooling means 353 for cooling the substrate W. [ As the cooling means 353, various methods such as cooling with cooling water and cooling using a thermoelectric element can be used. In addition, the cooling chamber 350 may be provided with a lift pin assembly (not shown) for positioning the substrate W on the cooling plate 352. The housing 351 is provided with an index robot 220 so that the developing robot 482 provided in the index robot 220 and a developing module 402 to be described later can carry the substrate W into or out of the cooling plate 352 (Not shown) in the direction provided and the direction in which the developing robot 482 is provided. Further, the cooling chamber 350 may be provided with doors (not shown) for opening and closing the above-described opening.

The application and development module 400 performs a process of applying a photoresist on the substrate W before the exposure process and a process of developing the substrate W after the exposure process. The application and development module 400 has a generally rectangular parallelepiped shape. The coating and developing module 400 has a coating module 401 and a developing module 402. The application module 401 and the development module 402 are arranged so as to be partitioned into layers with respect to each other. According to one example, the application module 401 is located on top of the development module 402.

The application module 401 includes a process of applying a photosensitive liquid such as a photoresist to the substrate W and a heat treatment process such as heating and cooling for the substrate W before and after the resist application process. The application module 401 has a resist application chamber 410, a bake chamber 420, and a transfer chamber 430. The resist application chamber 410, the bake chamber 420, and the transfer chamber 430 are sequentially disposed along the second direction 14. [ The resist application chamber 410 and the bake chamber 420 are positioned apart from each other in the second direction 14 with the transfer chamber 430 interposed therebetween. A plurality of resist coating chambers 410 are provided, and a plurality of resist coating chambers 410 are provided in the first direction 12 and the third direction 16, respectively. In the figure, six resist coating chambers 410 are provided. A plurality of bake chambers 420 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, six bake chambers 420 are provided. Alternatively, however, the bake chamber 420 may be provided in a greater number.

The transfer chamber 430 is positioned in parallel with the first buffer 320 of the first buffer module 300 in the first direction 12. In the transfer chamber 430, a dispenser robot 432 and a guide rail 433 are positioned. The transfer chamber 430 has a generally rectangular shape. The applicator robot 432 is connected to the bake chambers 420, the resist application chambers 400, the first buffer 320 of the first buffer module 300, and the first buffer module 500 of the second buffer module 500 And transfers the substrate W between the cooling chambers 520. The guide rails 433 are arranged so that their longitudinal directions are parallel to the first direction 12. The guide rails 433 guide the applying robot 432 to move linearly in the first direction 12. The applicator robot 432 has a hand 434, an arm 435, a support 436, and a pedestal 437. The hand 434 is fixed to the arm 435. The arm 435 is provided in a stretchable configuration so that the hand 434 is movable in the horizontal direction. The support 436 is provided so that its longitudinal direction is disposed along the third direction 16. The arm 435 is coupled to the support 436 so as to be linearly movable in the third direction 16 along the support 436. The support 436 is fixedly coupled to the pedestal 437 and the pedestal 437 is coupled to the guide rail 433 so as to be movable along the guide rail 433.

The resist coating chambers 410 all have the same structure. However, the types of the photoresist used in each of the resist coating chambers 410 may be different from each other. As an example, a chemical amplification resist may be used as the photoresist. The resist coating chamber 410 applies a photoresist on the substrate W. [ The resist coating chamber 410 has a housing 411, a support plate 412, and a nozzle 413. The housing 411 has a cup shape with an open top. The support plate 412 is located in the housing 411 and supports the substrate W. [ The support plate 412 is rotatably provided. The nozzle 413 supplies the photoresist onto the substrate W placed on the support plate 412. The nozzle 413 has a circular tube shape and can supply photoresist to the center of the substrate W. [ Alternatively, the nozzle 413 may have a length corresponding to the diameter of the substrate W, and the discharge port of the nozzle 413 may be provided as a slit. In addition, the resist coating chamber 410 may further be provided with a nozzle 414 for supplying a cleaning liquid such as deionized water to clean the surface of the substrate W to which the photoresist is applied.

The bake chamber 420 heat-treats the substrate W. For example, the bake chambers 420 may be formed by a prebake process for heating the substrate W to a predetermined temperature to remove organic substances and moisture on the surface of the substrate W, A soft bake process is performed after coating the substrate W on the substrate W, and a cooling process for cooling the substrate W after each heating process is performed. The bake chamber 420 has a cooling plate 421 or a heating plate 422. The cooling plate 421 is provided with a cooling means 423 such as a cooling water or a thermoelectric element. The heating plate 422 is also provided with a heating means 424, such as a hot wire or a thermoelectric element. The cooling plate 421 and the heating plate 422 may be provided in a single bake chamber 420, respectively. Optionally, some of the bake chambers 420 may include only the cooling plate 421, and the other portions may include only the heating plate 422.

The developing module 402 includes a developing process for supplying a developing solution to obtain a pattern on the substrate W to remove a part of the photoresist and a heat treatment process such as heating and cooling performed on the substrate W before and after the developing process . The development module 402 has a development chamber 800, a bake chamber 470, and a transfer chamber 480. [ The development chamber 800, the bake chamber 470, and the transfer chamber 480 are sequentially disposed along the second direction 14. The development chamber 800 and the bake chamber 470 are positioned apart from each other in the second direction 14 with the transfer chamber 480 therebetween. A plurality of developing chambers 800 are provided and a plurality of developing chambers 800 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, an example in which six developing chambers 800 are provided is shown. A plurality of bake chambers 470 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, six bake chambers 470 are provided. Alternatively, however, the bake chamber 470 can be provided in greater numbers.

The transfer chamber 480 is positioned in parallel with the second buffer 330 of the first buffer module 300 in the first direction 12. In the transfer chamber 480, the developing robot 482 and the guide rail 483 are positioned. The delivery chamber 480 has a generally rectangular shape. The development robot 482 is connected to the bake chambers 470, the development chambers 800, the second buffer 330 and the cooling chamber 350 of the first buffer module 300 and the second buffer module 500, And the second cooling chamber 540 of the second cooling chamber 540. The guide rail 483 is arranged such that its longitudinal direction is parallel to the first direction 12. The guide rail 483 guides the developing robot 482 to linearly move in the first direction 12. The developing sub-robot 482 has a hand 484, an arm 485, a supporting stand 486, and a pedestal 487. The hand 484 is fixed to the arm 485. The arm 485 is provided in a stretchable configuration to allow the hand 484 to move in a horizontal direction. The support 486 is provided so that its longitudinal direction is disposed along the third direction 16. The arm 485 is coupled to the support 486 such that it is linearly movable along the support 486 in the third direction 16. The support table 486 is fixedly coupled to the pedestal 487. The pedestal 487 is coupled to the guide rail 483 so as to be movable along the guide rail 483.

The development chambers 800 all have the same structure. However, the types of developers used in the respective developing chambers 800 may be different from each other. The development chamber 800 is provided with an apparatus for developing a substrate. The development chamber 800 removes a region of the photoresist on the substrate W where light is irradiated. At this time, the area of the protective film irradiated with the light is also removed. Depending on the type of selectively used photoresist, only the areas of the photoresist and protective film that are not irradiated with light can be removed.

In this embodiment, the development chamber 800 is provided with a substrate processing apparatus 800 for liquid-processing the substrate W. FIG. 6 is a plan view showing the substrate processing apparatus of FIG. 2, and FIG. 7 is a sectional view showing the substrate processing apparatus of FIG. Referring to FIGS. 5 and 6, the substrate processing apparatus 800 performs a developing process on a single substrate W. FIG. The substrate processing apparatus 800 includes a substrate supporting unit 810, a processing vessel 820, a lift unit 840, a liquid supply unit 850, and a controller 890.

The substrate supporting unit 810 supports and rotates the substrate W. The substrate support unit 810 includes a support plate 812 and rotation drive members 814 and 815. The support plate 812 supports the substrate. The support plate 812 is provided to have a circular plate shape. The support plate 812 may have a smaller diameter than the substrate W. [ A suction hole 816 is formed on the support surface of the support plate 812, and a negative pressure is applied to the suction hole 816. The substrate W can be vacuum-adsorbed to the support surface by negative pressure.

The rotation drive members 814 and 815 rotate the support plate 812. The rotation drive members 814 and 815 include a rotation shaft 814 and a driver 815. The rotary shaft 814 is provided so as to have a tubular shape whose longitudinal direction faces up and down. The rotary shaft 814 is coupled to the bottom surface of the support plate 812. The driver 815 transmits the rotational force to the rotating shaft 814. The rotary shaft 814 is rotatable about the central axis by the rotational force provided from the driver 815. [ The support plate 812 is rotatable together with the rotation shaft 814. The rotating speed of the rotating shaft 814 is adjusted by a driving unit 815 so that the rotating speed of the substrate W can be adjusted. For example, the driver 815 may be a motor.

The processing vessel 820 provides a processing space in which a developing process is performed. The processing vessel 820 recovers the liquid used in the developing process. The processing vessel 820 is provided in the form of a cup having an open top. The processing vessel 820 includes an inner recovery cylinder 822 and an outer recovery cylinder 826. Each of the recovery cylinders 822 and 826 recovers liquids of different kinds from each other. The inner recovery cylinder 822 is provided in an annular ring shape surrounding the substrate support member 810 and the outer recovery cylinder 826 is provided in an annular ring shape surrounding the inner recovery cylinder 822. Each of the inner space 822a of the inner recovery cylinder 822 and the space 826a between the outer recovery cylinder 826 and the inner recovery cylinder 822 are respectively connected to the inner recovery cylinder 822 and the outer recovery cylinder 826, And serves as an inflow port. Recovery bins 822b and 826b extending perpendicularly to the bottom of the recovery bins 822 and 826 are connected to the recovery bins 822 and 826, respectively. Each of the recovery lines 822b and 826b discharges the liquid introduced through the respective recovery cylinders 822 and 826. [ The discharged liquid can be reused through an external treatment liquid regeneration system (not shown).

The lift unit 840 adjusts the relative height between the processing vessel 820 and the substrate W. [ The elevating unit 840 moves the processing vessel 820 in the vertical direction. The lifting unit 840 includes a bracket 842, a moving shaft 844, and a driver 846. The bracket 842 connects the processing vessel 820 and the moving shaft 844. The bracket 842 is fixed to the vertical wall 822 of the processing vessel 820. The moving shaft 844 is provided such that its longitudinal direction is directed up and down. The upper end of the moving shaft 844 is fixedly coupled to the bracket 842. The moving shaft 844 is moved up and down by the actuator 846 and the processing vessel 820 is movable up and down together with the moving shaft 844. [ For example, the actuator 846 may be a cylinder or a motor.

The liquid supply unit 850 supplies liquid onto the substrate W supported by the substrate holding unit 810. [ The liquid supply unit 850 includes a first supply member 870, a second supply member 880, and a measurement member 1780. The first supply member 870 supplies the prewetting liquid and the treatment liquid, and the second supply member 880 supplies the rinsing liquid and the cleaning liquid.

The first feeding member 870 includes a first nozzle member 1300 and a first moving member 1100. The first moving member 1100 linearly moves the first nozzle member 1300 in the first direction 12. The first moving member 1100 moves the first nozzle member 1300 to a process position or a standby position. Here, the process position is the position where the first nozzle member 1300 faces the substrate W, and the standby position is the position out of the process position. The first moving member 1100 includes a first guide rail 1120 and a first arm 1140. The first guide rail 1120 is located on one side of the processing vessel 820. The first guide rail 1120 is provided so as to have a longitudinal direction parallel to the moving direction of the first nozzle member 1300. [ For example, the longitudinal direction of the first guide rail 1120 may be provided so as to face the first direction 12.

The first arm 1140 is provided to have a bar shape. The first arm 1140 is provided so as to have a longitudinal direction perpendicular to the first guide rail 1120 when viewed from above. for example. The longitudinal direction of the first arm 1140 may be provided so as to face the second direction 14 perpendicular to the first direction 12. A first nozzle member 1300 is coupled to one end of the first arm 1140 and the other end is connected to the first guide rail 1120 by a bracket. Accordingly, the first arm 1140 and the first nozzle member 1300 are movable together along the longitudinal direction of the first guide rail 1120.

The first nozzle member 1300 discharges the prewetting liquid in a stream manner, and supplies the treatment liquid in a stream mode and a liquid curtain mode, respectively. For example, the prewetting liquid is a liquid for converting the surface state of the substrate W into a wet state, and may be supplied onto the substrate W before the processing liquid is supplied. Fig. 8 is a perspective view showing the first nozzle member of Fig. 6; Fig. Referring to FIG. 8, the first nozzle member 1300 includes a body 1400 and a body 1470. A circular discharge port 1450 and a wetting liquid discharge port 1420 are formed on the bottom surface of the body 1400. The circular discharge port 1450 and the wetting liquid discharge port 1420 are sequentially arranged along the first direction 12. The treatment liquid is discharged in a stream manner through the circular discharge port 1450, and the prewetting liquid is discharged in a stream manner through the wetting liquid discharge port 1420. The movement path of the first nozzle member 1300 may include a position where the wetting liquid ejection port 1420 and the circular ejection port 1450 are aligned with the center of the substrate W. [

The body 1470 is coupled to one side of the body 1400. A slit discharge port 1480 is formed in the body 1470. The slit discharge port 1480 has a longitudinal direction parallel to the first direction 12. The slit discharge port 1480 is provided with a downward inclination toward the body 1400. The slit discharge port 1480 and the circular discharge port 1450 may be positioned to face each other in the second direction 14 perpendicular to the first direction 12 as viewed from above. for example. The treatment liquid discharged from each of the circular discharge port 1450 and the slit discharge port 1480 may be the same kind of liquid. The treatment liquid may be a developer.

According to one example, the treatment liquid may be firstly supplied through the circular discharge port 1450, and then supplied through the slit discharge port 1480. The treatment liquid supplied from the circular discharge port 1450 forms a uniform treatment liquid film on the substrate W and the treatment liquid supplied from the slit discharge port 1480 can increase the thickness of the treatment liquid film.

The second supply member 880 supplies the rinsing liquid and the cleaning liquid. The second feeding member 880 includes a second nozzle member 1700 and a second moving member 1500. The second moving member 1500 moves the second nozzle member 1700 in the vertical direction and in the horizontal direction perpendicular thereto. For example, the horizontal direction may be a direction parallel to the first direction 12. The second moving member 1500 simultaneously moves the second nozzle member 1700 to the process position or the standby position. The second moving member 1500 includes a second guide rail 1520 and a vertical driver 1540. The second guide rails 1520 are located on one side of the processing vessel 820. The second guide rail 1520 is provided so as to have a longitudinal direction parallel to the moving direction of the second nozzle member 1700. [ For example, the longitudinal direction of the second guide rail 1520 may be provided so as to face the first direction 12. The second guide rail 1520 is provided with a vertical driver 1540. The second guide rail 1520 is provided to a horizontal driver 882 that moves the vertical driver 1540 in the horizontal direction. The vertical driver 1540 moves the second nozzle member 1700 in the vertical direction. For example, the vertical driver 1540 may be a cylinder or a motor. Accordingly, the second nozzle member 1700 is moved in the vertical direction by the vertical driver 1540, and is movable in the horizontal direction by the second guide rail 1520.

The second nozzle member 1700 includes a second arm 1720, a rinsing nozzle 1740, and a cleaning nozzle 1760. The second arm 1720 has a bar shape. The second arm 1720 is provided so as to have a longitudinal direction perpendicular to the second guide rail 1520 when viewed from above. for example. The longitudinal direction of the second arm 1720 may be provided so as to face the second direction 14 perpendicular to the first direction 12. One end of the second arm 1720 is provided with a second nozzle member 1700, and the other end thereof is connected to the vertical driver 1540. The vertical driver 1540 regulates the relative height of the cleaning nozzle 1760 relative to the substrate W.

The rinse nozzle 1740 supplies the rinse liquid, and the rinse nozzle 1760 supplies the rinse liquid. The rinse nozzle 1740 supplies the rinse liquid in a dropping manner, and the rinse nozzle 1760 supplies the rinse liquid in a mist manner. The rinse nozzle 1740 and the cleaning nozzle 1760 may be arranged in a direction parallel to the first direction. For example, the rinsing liquid and the cleaning liquid may be the same kind of liquid. The rinsing liquid and the cleaning liquid may be pure water. The rinsing liquid may be firstly supplied onto the substrate W, and then the cleaning liquid may be supplied secondarily. The cleaning liquid may be supplied onto the liquid film formed by the rinsing liquid.

The measurement member 1780 measures the thickness of the liquid film formed on the substrate W. [ The measuring member 1780 measures the thickness of the liquid film formed by the rinsing liquid. The measuring member 1780 is installed at one end of the second arm 1720. The measurement member 1780 may be positioned between the rinse nozzle 1740 and the cleaning nozzle 1760. [ The measuring member 1780 measures the area of the facing substrate W. [ The measuring member 1780 can measure the liquid film thickness in the vertical downward direction. The measuring member 1780 is spaced apart from the cleaning nozzle 1760 by a predetermined distance L. [ According to one example, the measuring member 1780 may be positioned to measure an area deviating from the discharge area of the cleaning liquid as shown in Fig. This is to prevent the measuring member 1780 from measuring incorrectly the liquid film thickness by the rinsing liquid.

The controller 890 changes the process conditions based on the measurement value measured from the measurement member 1780 to adjust the thickness of the liquid film formed by the rinsing liquid or the amount of impact applied to the substrate W. [ The controller 890 may control the substrate support unit to adjust the thickness of the liquid film so as to change the process conditions, or may control the second moving member to adjust the amount of impact. The process conditions include the relative height of the cleaning nozzle 1760 to the substrate W or the rotational speed of the substrate W. According to one example, the controller 890 may control the relative height of the cleaning nozzle 1760 or the rotational speed of the substrate W so that the measured value matches the reference value.

The controller 890 may increase the rotational speed of the substrate W if the measured value is larger than the reference value and decrease the rotational speed of the substrate W if the measured value is smaller than the reference value. The controller 890 may increase the relative height of the cleaning nozzle 1760 when the measured value is larger than the reference value, and lower the relative height if the measured value is smaller than the reference value. Here, the reference value may be the thickness of the liquid film which is transmitted to the substrate W and the pattern of the substrate W is not damaged.

Further, the controller 890 can control the second nozzle member 1700 and the second movable member 1500 so that the rinsing liquid and the cleaning liquid are sequentially supplied after the processing liquid is supplied. The rinsing liquid is supplied onto the substrate W to form a liquid film, and the cleaning liquid can be discharged onto the liquid film to generate a pressing force on the substrate W. The discharge position of the cleaning liquid can be moved between the center of the substrate W and the edge area.

Next, a process of processing the substrate W using the above-described substrate processing apparatus will be described. FIG. 10 is a flow chart showing a process of processing a substrate using the apparatus of FIG. 6, and FIGS. 11 to 13 are views showing a process of processing a substrate by using the apparatus of FIG. 10 to 13, a method of treating the substrate W includes a wetting liquid supplying step, a first treating liquid supplying step, a second treating liquid supplying step, a rinsing liquid supplying step, and a cleaning liquid supplying step. The wetting liquid supply step, the first treatment liquid supply step, the first treatment liquid supply step, the rinsing liquid supply step, and the cleaning liquid supply step are sequentially performed.

The wetting liquid supplying step is a step of supplying a prewetting liquid onto the substrate (W). In the wetting liquid supply step, the wetting liquid discharge port 1420 is positioned to face the center of the substrate W. The prewetting liquid is supplied to the center of the substrate W and diffused to the entire region of the substrate W by rotation of the substrate W. [ The surface of the substrate W is converted into the wet state by the prewetting liquid.

The first process liquid supply step is a step of supplying the process liquid on the substrate W in a stream manner. In the first process liquid supply step, the circular discharge port 1450 is positioned to face the center of the substrate W. In the first process liquid supply step, the process liquid supplied from the circular discharge port 1450 is supplied onto the substrate W. The processing liquid is supplied to the center of the substrate W and is diffused into the entire region of the substrate W by the rotation of the substrate W. [ On the substrate W, a liquid film of the process liquid (hereinafter, a process liquid film) is formed.

The second process liquid supply step is a step of supplying the process liquid onto the substrate W in a liquid curtain manner. In the second process liquid supply step, the process liquid supplied from the slit discharge port 1480 is supplied to the substrate W. The discharge position of the processing liquid is moved in the direction from the center of the substrate W to the edge area. Thus, the thickness of the treatment liquid film is raised, and the efficiency of development processing of the substrate W can be improved.

In the rinsing liquid supplying step, the treating liquid remaining on the substrate W is rinsed. At the rinsing liquid supplying step, a rinsing liquid is supplied onto the substrate W in a dropping manner. Referring to FIG. 11, the rinse nozzle 1740 supplies the rinsing liquid onto the substrate W at a position facing the center of the substrate W. The rinsing liquid is diffused into the entire region of the substrate W by the rotation of the substrate W. The treated liquid film is removed by the rinsing liquid, and a liquid film of the rinsing liquid (hereinafter referred to as rinsing liquid film) is formed. When the rinsing liquid supply step is completed, the supply of the rinsing liquid is stopped, and the rinsing liquid supply step is advanced.

The rinsing liquid supply step is a step of providing a pressing force on the substrate W. In the cleaning liquid supply step, the cleaning liquid is supplied on the rinse liquid film in a mist manner. Referring to FIG. 12, the cleaning liquid is supplied to the center of the substrate W. Thereafter, the discharge position of the cleaning liquid is moved from the center of the substrate W to the edge area. At this time, the measuring member 1780 may be positioned at the front end of the cleaning nozzle 1760 with respect to the moving direction of the discharging position of the cleaning liquid. This is for measuring the thickness of the rinse liquid film before the cleaning liquid is supplied. The thickness of the rinse liquid film is measured by the measuring member 1780 and at least one of the relative height of the cleaning nozzle 1760 and the rotational speed of the substrate W is adjusted based on the measured value.

For example, when the measured value is smaller than the reference value, the rotational speed of the substrate W can be reduced or the height of the cleaning nozzle 1760 can be reduced. When the rotation speed of the substrate W is lowered, the thickness of the rinsing liquid film can be increased as the centrifugal force transmitted to the rinsing liquid film is lowered. Alternatively, if the height of the cleaning nozzle 1760 with respect to the substrate W is reduced, the impact force applied to the substrate W may be reduced by reducing the force applied to the substrate W.

Alternatively, when the measured value is larger than the reference value, the rotation speed of the substrate W may be increased or the height of the cleaning nozzle 1760 may be increased. When the rotation speed of the substrate W is increased, As the centrifugal force increases, the thickness of the rinse liquid film can be lowered. In contrast, when the height of the cleaning nozzle 1760 with respect to the substrate W is increased, the impact force transmitted to the substrate W becomes larger, and the amount of impact applied to the substrate W can be increased.

According to the first embodiment described above, the cleaning liquid is supplied in a state in which supply of the rinse liquid is stopped to the cleaning liquid supply step.

However, according to the second embodiment of the present invention, the rinsing liquid and the rinsing liquid can be supplied together with the rinsing liquid supplying step as shown in Fig.

Further, according to the third embodiment of the present invention, the process conditions may further include the supply flow rate of the cleaning liquid. A valve 1764 is provided in the liquid supply line 1762 for supplying the cleaning liquid to the cleaning nozzle 1760 and the controller 890 controls the valve 1764 to control the supply flow rate of the cleaning liquid. Accordingly, the force applied to the substrate W can be adjusted. for example. When the measured value is lower than the reference value, the supply flow rate of the cleaning liquid can be lowered, and the amount of the impact applied to the substrate W can be reduced. Alternatively, when the measured value is larger than the reference value, the supply flow rate of the cleaning liquid may be increased to increase the amount of impact applied to the substrate W.

2 to 5, the bake chamber 470 of the developing module 402 heat-treats the substrate W. For example, the bake chambers 470 may include a post-bake process for heating the substrate W before the development process is performed, a hard bake process for heating the substrate W after the development process is performed, And a cooling step for cooling the substrate W is performed. The bake chamber 470 has a cooling plate 471 or a heating plate 472. The cooling plate 471 is provided with a cooling means 473 such as a cooling water or a thermoelectric element. Or the heating plate 472 is provided with a heating means 474 such as a hot wire or a thermoelectric element. The cooling plate 471 and the heating plate 472 may be provided in one bake chamber 470, respectively. Optionally, some of the bake chambers 470 may have only a cooling plate 471, while the other may have only a heating plate 472. [

As described above, in the application and development module 400, the application module 401 and the development module 402 are provided to be separated from each other. In addition, the application module 401 and the development module 402 may have the same chamber arrangement as viewed from above.

The second buffer module 500 is provided as a path through which the substrate W is transferred between the coating and developing module 400 and the pre- and post-exposure processing module 600. The second buffer module 500 performs a predetermined process on the substrate W such as a cooling process or an edge exposure process. The second buffer module 500 includes a frame 510, a buffer 520, a first cooling chamber 530, a second cooling chamber 540, an edge exposure chamber 550, and a second buffer robot 560 I have. The frame 510 has a rectangular parallelepiped shape. The buffer 520, the first cooling chamber 530, the second cooling chamber 540, the edge exposure chamber 550, and the second buffer robot 560 are located within the frame 510. The buffer 520, the first cooling chamber 530, and the edge exposure chamber 550 are disposed at a height corresponding to the application module 401. The second cooling chamber 540 is disposed at a height corresponding to the development module 402. The buffer 520, the first cooling chamber 530, and the second cooling chamber 540 are sequentially arranged in a row along the third direction 16. The buffer 520 is disposed along the first direction 12 with the transfer chamber 430 of the application module 401. [ The edge exposure chamber 550 is spaced a certain distance in the second direction 14 from the buffer 520 or the first cooling chamber 530.

The second buffer robot 560 carries the substrate W between the buffer 520, the first cooling chamber 530, and the edge exposure chamber 550. A second buffer robot 560 is positioned between the edge exposure chamber 550 and the buffer 520. The second buffer robot 560 may be provided in a structure similar to that of the first buffer robot 360. The first cooling chamber 530 and the edge exposure chamber 550 perform a subsequent process on the substrates W that have been processed in the application module 401. The first cooling chamber 530 cools the substrate W processed in the application module 401. The first cooling chamber 530 has a structure similar to the cooling chamber 350 of the first buffer module 300. The edge exposure chamber 550 exposes its edge to the substrates W that have undergone the cooling process in the first cooling chamber 530. [ The buffer 520 temporarily stores the substrate W before the substrates W processed in the edge exposure chamber 550 are transported to a preprocessing module 601 described later. The second cooling chamber 540 cools the substrates W before the processed substrates W are transferred to the developing module 402 in the post-processing module 602 described later. The second buffer module 500 may further have a buffer added to the height corresponding to the development module 402. In this case, the substrates W processed in the post-processing module 602 may be temporarily stored in the added buffer and then conveyed to the developing module 402.

The pre- and post-exposure processing module 600 may process a process of applying a protective film for protecting the photoresist film applied to the substrate W during liquid immersion exposure, when the exposure apparatus 900 performs the liquid immersion exposure process. In addition, the pre- and post-exposure processing module 600 may perform a process of cleaning the substrate W after exposure. In addition, when the coating process is performed using the chemically amplified resist, the pre- and post-exposure processing module 600 can process the post-exposure bake process.

The pre-exposure post-processing module 600 has a pre-processing module 601 and a post-processing module 602. The pre-processing module 601 performs a process of processing the substrate W before the exposure process, and the post-process module 602 performs a process of processing the substrate W after the exposure process. The pre-processing module 601 and the post-processing module 602 are arranged so as to be partitioned into layers with respect to each other. According to one example, the preprocessing module 601 is located on top of the post-processing module 602. The preprocessing module 601 is provided at the same height as the application module 401. The post-processing module 602 is provided at the same height as the developing module 402. The pretreatment module 601 has a protective film application chamber 610, a bake chamber 620, and a transfer chamber 630. The protective film application chamber 610, the transfer chamber 630, and the bake chamber 620 are sequentially disposed along the second direction 14. The protective film application chamber 610 and the bake chamber 620 are positioned apart from each other in the second direction 14 with the transfer chamber 630 therebetween. A plurality of protective film application chambers 610 are provided and are arranged along the third direction 16 to form layers. Alternatively, a plurality of protective film application chambers 610 may be provided in the first direction 12 and the third direction 16, respectively. A plurality of bake chambers 620 are provided and are disposed along the third direction 16 to form layers. Alternatively, a plurality of bake chambers 620 may be provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 630 is positioned in parallel with the first cooling chamber 530 of the second buffer module 500 in the first direction 12. In the transfer chamber 630, a pre-processing robot 632 is located. The transfer chamber 630 has a generally square or rectangular shape. The preprocessing robot 632 is connected between the protective film application chambers 610, the bake chambers 620, the buffer 520 of the second buffer module 500 and the first buffer 720 of the interface module 700, The substrate W is transferred. The preprocessing robot 632 has a hand 633, an arm 634, and a support 635. The hand 633 is fixed to the arm 634. The arm 634 is provided with a retractable structure and a rotatable structure. The arm 634 is coupled to the support 635 so as to be linearly movable along the support 635 in the third direction 16.

The protective film applying chamber 610 applies a protective film for protecting the resist film on the substrate W during liquid immersion exposure. The protective film application chamber 610 has a housing 611, a support plate 612, and a nozzle 613. The housing 611 has a cup shape with its top opened. The support plate 612 is located in the housing 611 and supports the substrate W. [ The support plate 612 is rotatably provided. The nozzle 613 supplies a protective liquid for forming a protective film onto the substrate W placed on the supporting plate 612. The nozzle 613 has a circular tube shape and can supply the protective liquid to the center of the substrate W. [ Alternatively, the nozzle 613 may have a length corresponding to the diameter of the substrate W, and the discharge port of the nozzle 613 may be provided with a slit. In this case, the support plate 612 may be provided in a fixed state. The protective liquid includes a foamable material. The protective liquid may be a photoresist and a material having a low affinity for water. For example, the protective liquid may contain a fluorine-based solvent. The protective film application chamber 610 supplies the protective liquid to the central region of the substrate W while rotating the substrate W placed on the support plate 612.

The bake chamber 620 heat-treats the substrate W coated with the protective film. The bake chamber 620 has a cooling plate 621 or a heating plate 622. The cooling plate 621 is provided with a cooling means 623 such as a cooling water or a thermoelectric element. Or heating plate 622 is provided with a heating means 624, such as a hot wire or a thermoelectric element. The heating plate 622 and the cooling plate 621 may be provided in a single bake chamber 620, respectively. Optionally, some of the bake chambers 620 may have only the heating plate 622, while others may only have the cooling plate 621.

The post-processing module 602 has a cleaning chamber 660, a post-exposure bake chamber 670, and a delivery chamber 680. The cleaning chamber 660, the transfer chamber 680, and the post-exposure bake chamber 670 are sequentially disposed along the second direction 14. Accordingly, the cleaning chamber 660 and the post-exposure baking chamber 670 are positioned apart from each other in the second direction 14 with the transfer chamber 680 therebetween. A plurality of cleaning chambers 660 are provided and may be disposed along the third direction 16 to form layers. Alternatively, a plurality of cleaning chambers 660 may be provided in the first direction 12 and the third direction 16, respectively. A plurality of post-exposure bake chambers 670 are provided and may be disposed along the third direction 16 to form layers. Alternatively, a plurality of post-exposure bake chambers 670 may be provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 680 is positioned in parallel with the second cooling chamber 540 of the second buffer module 500 in the first direction 12 as viewed from above. The transfer chamber 680 has a generally square or rectangular shape. A post processing robot 682 is located in the transfer chamber 680. The post-processing robot 682 is connected to the cleaning chambers 660, post-exposure bake chambers 670, the second cooling chamber 540 of the second buffer module 500, and the second And transfers the substrate W between the buffers 730. The postprocessing robot 682 provided in the postprocessing module 602 may be provided with the same structure as the preprocessing robot 632 provided in the preprocessing module 601. [

The cleaning chamber 660 cleans the substrate W after the exposure process. The cleaning chamber 660 has a housing 661, a support plate 662, and a nozzle 663. The housing 661 has a cup shape with an open top. The support plate 662 is located in the housing 661 and supports the substrate W. [ The support plate 662 is rotatably provided. The nozzle 663 supplies the cleaning liquid onto the substrate W placed on the support plate 662. As the cleaning liquid, water such as deionized water may be used. The cleaning chamber 660 supplies the cleaning liquid to the central region of the substrate W while rotating the substrate W placed on the support plate 662. Optionally, while the substrate W is rotating, the nozzle 663 may move linearly or rotationally from the central region of the substrate W to the edge region.

The post-exposure bake chamber 670 heats the substrate W subjected to the exposure process using deep UV light. The post-exposure baking step heats the substrate W and amplifies the acid generated in the photoresist by exposure to complete the property change of the photoresist. The post-exposure bake chamber 670 has a heating plate 672. The heating plate 672 is provided with a heating means 674 such as a hot wire or a thermoelectric element. The post-exposure bake chamber 670 may further include a cooling plate 671 therein. The cooling plate 671 is provided with a cooling means 673 such as a cooling water or a thermoelectric element. Further, a bake chamber having only the cooling plate 671 may be further provided.

As described above, the pre-processing module 601 and the post-processing module 602 in the pre-exposure processing module 600 are provided to be completely separated from each other. The transfer chamber 630 of the preprocessing module 601 and the transfer chamber 680 of the postprocessing module 602 are provided in the same size and can be provided so as to completely overlap each other when viewed from above. Further, the protective film application chamber 610 and the cleaning chamber 660 may be provided to have the same size as each other and be provided so as to completely overlap with each other when viewed from above. Further, the bake chamber 620 and the post-exposure bake chamber 670 are provided in the same size, and can be provided so as to completely overlap each other when viewed from above.

The interface module 700 transfers the substrate W between the exposure pre- and post-processing module 600 and the exposure apparatus 900. The interface module 700 has a frame 710, a first buffer 720, a second buffer 730, and an interface robot 740. The first buffer 720, the second buffer 730, and the interface robot 740 are located within the frame 710. The first buffer 720 and the second buffer 730 are spaced apart from each other by a predetermined distance and are stacked on each other. The first buffer 720 is disposed higher than the second buffer 730. The first buffer 720 is positioned at a height corresponding to the preprocessing module 601 and the second buffer 730 is positioned at a height corresponding to the postprocessing module 602. The first buffer 720 is arranged in a line along the first direction 12 with the transfer chamber 630 of the preprocessing module 601 while the second buffer 730 is arranged in the postprocessing module 602, Are arranged in a line along the first direction 12 with the transfer chamber 630 of the transfer chamber 630. [

The interface robot 740 is spaced apart from the first buffer 720 and the second buffer 730 in the second direction 14. The interface robot 740 carries the substrate W between the first buffer 720, the second buffer 730 and the exposure apparatus 900. The interface robot 740 has a structure substantially similar to that of the second buffer robot 560.

The first buffer 720 temporarily stores the substrates W processed in the preprocessing module 601 before they are transferred to the exposure apparatus 900. The second buffer 730 temporarily stores the processed substrates W in the exposure apparatus 900 before they are transferred to the post-processing module 602. The first buffer 720 has a housing 721 and a plurality of supports 722. The supports 722 are disposed within the housing 721 and are provided spaced apart from each other in the third direction 16. One substrate W is placed on each support 722. The housing 721 is movable in the direction in which the interface robot 740 is provided and in the direction in which the interface robot 740 and the preprocessing robot 632 transfer the substrate W to and from the support table 722, 632 are provided with openings (not shown) in the direction in which they are provided. The second buffer 730 has a structure substantially similar to that of the first buffer 720. However, the housing 731 of the second buffer 730 has an opening (not shown) in the direction in which the interface robot 740 is provided and in a direction in which the postprocessing robot 682 is provided. Only the buffers and robots can be provided as described above without providing a chamber for performing a predetermined process on the substrate W in the interface module.

1300: first nozzle member 1700: second nozzle member
1740: Rinse nozzle 1760: Cleaning nozzle
1780: Measurement member

Claims (19)

An apparatus for liquid-processing a substrate,
A support plate for supporting the substrate;
A rotation driving member for rotating the support plate;
A nozzle member having a cleaning nozzle for discharging a cleaning liquid and forming a liquid film on a substrate supported on the substrate supporting unit;
A moving member for moving the cleaning nozzle in a vertical direction;
A measuring member for measuring a thickness of the liquid film formed on the substrate; And,
And a controller that controls the rotation drive member or the movable member based on the measurement value measured by the measurement member. The method according to claim 1,
And the controller controls the rotation drive member based on the measured value. 3. The method of claim 2,
Wherein the controller controls the rotation driver to increase the rotation speed of the substrate when the measured value is larger than the reference value and decrease the rotation speed of the substrate when the measured value is lower than the reference value. 3. The method of claim 2,
The moving member includes:
And a vertical driver for adjusting a relative height of the nozzle with respect to the substrate supported by the support plate,
Wherein the controller controls the vertical driver based on the measured value. 5. The method of claim 4,
Wherein the controller is configured to increase the relative height of the cleaning nozzle relative to the substrate if the measured value is greater than a reference value and to decrease the relative height of the cleaning nozzle relative to the substrate when the measured value is less than the reference value, . 6. The method according to any one of claims 2 to 5,
Wherein the nozzle member comprises:
Further comprising a rinsing nozzle for discharging a rinsing liquid to form a liquid film on the substrate supported by the substrate supporting unit,
The cleaning nozzle discharges the cleaning liquid in a mist manner,
Wherein the rinsing nozzle discharges the rinsing liquid in a dropping manner. 6. The method according to any one of claims 2 to 5,
Wherein the nozzle member comprises:
Further comprising an arm for supporting the cleaning nozzle, wherein the measuring member is mounted on the arm. 8. The method of claim 7,
Wherein the cleaning nozzle discharges the cleaning liquid in a mist manner. 9. The method of claim 8,
Wherein the nozzle driver further comprises a horizontal driver for moving the arm in a horizontal direction,
Wherein the controller controls the horizontal driver so that the discharge region of the cleaning liquid is moved between the center of the substrate and the edge region. A method for liquid processing a substrate,
A rinsing liquid is discharged onto the rotating substrate to form a liquid film of the rinsing liquid on the substrate,
The cleaning liquid is discharged onto the liquid film of the rotating substrate to clean the substrate,
Wherein the thickness of the liquid film is measured at the time of discharging the cleaning liquid, and the process condition is changed based on the measured value. 11. The method of claim 10,
Wherein the process conditions comprise a relative height of the cleaning nozzle to the substrate. 12. The method of claim 11,
And increasing the rotational speed of the substrate when the measured value is greater than the reference value and decreasing the rotational speed of the substrate when the measured value is less than the reference value. 11. The method of claim 10,
Wherein the process conditions include a rotational speed of the substrate. 14. The method of claim 13,
And increasing the relative height if the measured value is greater than the reference value, and decreasing the relative height if the measured value is less than the reference value. 16. The method according to any one of claims 10 to 15,
Wherein the cleaning liquid is discharged in a mist manner. 16. The method of claim 15,
Wherein the discharge region of the cleaning liquid is moved between the center and the edge region of the substrate. 17. The method of claim 16,
Wherein when the liquid film is formed, supply of the rinsing liquid is stopped, and the cleaning liquid is discharged onto the liquid film. 17. The method of claim 16,
Wherein when the liquid film is formed, the cleaning liquid is discharged together with the rinsing liquid. 16. The method of claim 15,
Wherein the rinsing liquid and the rinsing liquid are the same liquid.

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