KR101914480B1 - Apparatus and method for treating substrate - Google Patents

Abstract

The present invention provides an apparatus and a method for liquid-treating a substrate. A method of forming a liquid film on a substrate in a processing space provided with a downward flow includes a liquid supplying step of supplying a processing liquid onto the substrate and a supplying step of supplying a liquid to the substrate Wherein the supplying step supplies the descending airflow to the first flow rate, and the thickness adjusting step supplies the descending airflow to the second flow rate different from the first flow rate. As a result, it is possible to minimize the thickness of the edge region of the liquid film compared to other regions, and to control the thickness of the liquid film uniformly.

Description

[0001] Apparatus and method for treating substrate [0002]

The present invention relates to an apparatus and a method for liquid-treating a substrate.

Various processes such as cleaning, deposition, photolithography, etching, and ion implantation are performed to manufacture semiconductor devices. Among these processes, the photolithography process sequentially performs the application, exposure, and development steps. The coating step is a step of applying a photosensitive liquid such as a resist to the surface of the substrate. The exposure process is a process for exposing a circuit pattern on a substrate having a photosensitive film formed thereon. The developing step is a step of selectively developing the exposed region of the substrate.

Generally, a liquid film having a uniform thickness on a substrate is required in a coating process. Thus, the photosensitive liquid is supplied to the central position of the substrate, and the substrate is rotated. The photosensitive liquid supplied to the center of the substrate is diffused from the center of the substrate to the edge by centrifugal force.

However, as the time passes, the liquid film becomes thicker than the area excluding the edge area, which causes a poor application process.

Korean Patent Publication No. 2009-0070602

SUMMARY OF THE INVENTION The present invention is directed to an apparatus and a method capable of having a uniform thickness for each liquid film region formed on a substrate.

According to an embodiment of the present invention, there is provided an apparatus and a method for liquid-processing a substrate. A method of forming a liquid film on a substrate in a processing space provided with a downward flow includes a liquid supplying step of supplying a processing liquid onto the substrate and a supplying step of supplying a liquid to the substrate Wherein the supplying step supplies the descending airflow to the first flow rate, and the thickness adjusting step supplies the descending airflow to the second flow rate different from the first flow rate.

The second flow rate may be provided at a slower rate than the first flow rate. The first flow rate may be 0.2 m / s, and the second flow rate may be 0.1 to 0.05 m / s. The method includes a prewetting step of supplying a prewetting liquid onto the substrate before the liquid supply step to convert the surface of the substrate to a wet state, and after the thickness adjustment step, drying the liquid film on the substrate Further comprising the step of supplying the descending airflow to the second flow rate in each of the prewetting step and the drying step. The prewetting liquid includes a thinner, and the treatment liquid may include a sensitizing liquid. Wherein the liquid supply step rotates the substrate at a first speed and the thickness adjusting step further includes a reflow step of rotating the substrate at a second speed and a diffusion step of rotating the substrate at a third speed, The first speed may be faster than the second speed, and may be slower than the third speed. Wherein the treatment space is evacuated in each of the prewetting step, the liquid supply step, the thickness adjusting step, and the drying step, wherein the thickness adjusting step includes a preheating step, a liquid supplying step, The processing space can be evacuated by pressure.

The substrate processing apparatus includes a housing having a processing space, a substrate supporting unit for supporting and rotating the substrate in the processing space, a liquid supply unit having a processing liquid nozzle for supplying the processing liquid onto the substrate supported by the substrate supporting unit, And a controller for controlling the airflow forming unit and the liquid supply unit, wherein the controller comprises: a liquid supplying step of supplying a processing liquid onto the substrate; Wherein the controller controls the liquid supply unit so that the thickness adjusting step for adjusting the thickness is sequentially performed, wherein the controller supplies the downward flow to the liquid supply step at the first flow rate, 1 at a second flow rate different from the first flow rate.

The airflow forming unit includes an air flow supply line for supplying clean air to the processing space, a fan for adjusting the flow rate of the clean air installed in the air flow supply line, Wherein the controller is operable to control the fan such that the second flow rate has a slower rate than the first flow rate. Wherein the liquid supply unit further comprises a wetting nozzle for supplying a prewetting liquid onto a substrate supported by the substrate supporting unit, wherein the controller is configured to perform a prewetting step of switching the surface of the substrate to a wet state before the liquid supply step And a drying step of drying the liquid film on the substrate after the thickness adjusting step, wherein the controller controls the liquid supplying unit so that the downflow air flows to the second flow rate The fan can be controlled to be supplied to the fan. The apparatus according to claim 1, further comprising: a processing vessel which surrounds the substrate supporting unit in the processing space and opens at an upper portion thereof; and an exhaust unit which exhausts an internal space of the processing vessel, The liquid supply step, and the exhausting unit can be further controlled to exhaust the processing space with a smaller exhaust pressure than the drying step.

According to the embodiment of the present invention, the thickness adjustment step supplies airflow with a slower flow rate than the other steps. As a result, it is possible to minimize the thickness of the edge region of the liquid film compared to other regions, and to control the thickness of the liquid film uniformly.

According to the embodiment of the present invention, in the thickness adjusting step, the processing space is evacuated to a smaller exhaust pressure than the other steps. As a result, it is possible to minimize the thickness of the edge region of the liquid film compared to other regions, and to control the thickness of the liquid film uniformly.

1 is a cross-sectional view showing a photoresist film formed by a general coating process.
2 is a plan view of a substrate processing apparatus according to a first embodiment of the present invention.
3 is a cross-sectional view of the facility of FIG. 2 viewed in the AA direction.
Fig. 4 is a cross-sectional view of the facility of Fig. 2 viewed from the BB direction.
5 is a cross-sectional view of the installation of FIG.
Fig. 6 is a plan view showing the substrate processing apparatus of Fig. 2;
7 is a cross-sectional view showing the substrate processing apparatus of Fig.
FIG. 8 is a graph showing a flow rate of a downward airflow that varies during the process of forming a liquid film on a substrate using the apparatus of FIG. 7; FIG.
9 is a view showing a variable exhaust pressure in the process of forming a liquid film on a substrate using the apparatus of FIG.
10 is a view showing a rotational speed of a substrate which is varied in the process of forming a liquid film on a substrate using the apparatus of FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

The facilities of this embodiment can be used to perform a photolithography process on a substrate such as a semiconductor wafer or a flat panel display panel. In particular, the apparatus of this embodiment can be used to perform a coating process and a developing process on a substrate, which is connected to an exposure apparatus. Hereinafter, a case where a wafer is used as a substrate will be described as an example.

Hereinafter, the substrate processing apparatus of the present invention will be described with reference to FIG. 2 through FIG.

FIG. 2 is a view of the substrate processing apparatus viewed from above, FIG. 3 is a view of the apparatus of FIG. 2 viewed from the AA direction, FIG. 4 is a view of the apparatus of FIG. 2 viewed from the BB direction, In the CC direction.

2 to 5, the substrate processing apparatus 1 includes a load port 100, an index module 200, a first buffer module 300, a coating and developing module 400, a second buffer module 500 An exposure pre- and post-processing module 600, and an interface module 700. The load port 100, the index module 200, the first buffer module 300, the application and development module 400, the second buffer module 500, the pre-exposure processing module 600, and the interface module 700, Are sequentially arranged in one direction in a single direction.

Hereinafter, the load port 100, the index module 200, the first buffer module 300, the coating and developing module 400, the second buffer module 500, the pre-exposure processing module 600, 700 are referred to as a first direction 12 and a direction perpendicular to the first direction 12 as viewed from above is referred to as a second direction 14 and a direction in which the first direction 12 and the second And a direction perpendicular to the direction 14 is referred to as a third direction 16.

The substrate W is moved in a state accommodated in the cassette 20. At this time, the cassette 20 has a structure that can be sealed from the outside. For example, as the cassette 20, a front open unified pod (FOUP) having a door at the front can be used.

Hereinafter, the load port 100, the index module 200, the first buffer module 300, the application and development module 400, the second buffer module 500, the pre-exposure processing module 600, 700 will be described in detail.

The load port 100 has a mounting table 120 on which the cassette 20 accommodating the substrates W is placed. A plurality of mounts 120 are provided, and the mounts 200 are arranged in a line along the second direction 14. [ In Fig. 2, four placement tables 120 are provided.

The index module 200 transfers the substrate W between the cassette 20 placed on the table 120 of the load port 100 and the first buffer module 300. The index module 200 has a frame 210, an index robot 220, and a guide rail 230. The frame 210 is provided generally in the shape of an inner rectangular parallelepiped and is disposed between the load port 100 and the first buffer module 300. The frame 210 of the index module 200 may be provided at a lower height than the frame 310 of the first buffer module 300 described later. The index robot 220 and the guide rail 230 are disposed within the frame 210. The index robot 220 is moved in the first direction 12, the second direction 14 and the third direction 16 so that the hand 221 that directly handles the substrate W can be moved and rotated in the first direction 12, the second direction 14, . The index robot 220 has a hand 221, an arm 222, a support 223, and a pedestal 224. The hand 221 is fixed to the arm 222. The arm 222 is provided with a stretchable structure and a rotatable structure. The support base 223 is disposed along the third direction 16 in the longitudinal direction. The arm 222 is coupled to the support 223 to be movable along the support 223. The support 223 is fixedly coupled to the pedestal 224. The guide rails 230 are provided so that their longitudinal direction is arranged along the second direction 14. The pedestal 224 is coupled to the guide rail 230 so as to be linearly movable along the guide rail 230. Further, although not shown, the frame 210 is further provided with a door opener for opening and closing the door of the cassette 20.

The first buffer module 300 has a frame 310, a first buffer 320, a second buffer 330, a cooling chamber 350, and a first buffer robot 360. The frame 310 is provided in the shape of an inner rectangular parallelepiped and is disposed between the index module 200 and the application and development module 400. The first buffer 320, the second buffer 330, the cooling chamber 350, and the first buffer robot 360 are located within the frame 310. The cooling chamber 350, the second buffer 330, and the first buffer 320 are sequentially disposed in the third direction 16 from below. The second buffer 330 and the cooling chamber 350 are located at a height corresponding to the coating module 401 of the coating and developing module 400 described later and the coating and developing module 400 at a height corresponding to the developing module 402. [ The first buffer robot 360 is spaced apart from the second buffer 330, the cooling chamber 350 and the first buffer 320 by a predetermined distance in the second direction 14.

The first buffer 320 and the second buffer 330 temporarily store a plurality of substrates W, respectively. The second buffer 330 has a housing 331 and a plurality of supports 332. The supports 332 are disposed within the housing 331 and are provided spaced apart from each other in the third direction 16. One substrate W is placed on each support 332. The housing 331 is constructed so that the index robot 220, the first buffer robot 360 and the developing robot 482 of the developing module 402 described later mount the substrate W on the support 332 in the housing 331 (Not shown) in the direction in which the index robot 220 is provided, in the direction in which the first buffer robot 360 is provided, and in the direction in which the developing robot 482 is provided, so that the developing robot 482 can carry it in or out. The first buffer 320 has a structure substantially similar to that of the second buffer 330. The housing 321 of the first buffer 320 has an opening in a direction in which the first buffer robot 360 is provided and in a direction in which the application unit robot 432 located in the application module 401 described later is provided. The number of supports 322 provided in the first buffer 320 and the number of supports 332 provided in the second buffer 330 may be the same or different. According to one example, the number of supports 332 provided in the second buffer 330 may be greater than the number of supports 322 provided in the first buffer 320.

The first buffer robot 360 transfers the substrate W between the first buffer 320 and the second buffer 330. The first buffer robot 360 has a hand 361, an arm 362, and a support base 363. The hand 361 is fixed to the arm 362. The arm 362 is provided in a stretchable configuration so that the hand 361 is movable along the second direction 14. The arm 362 is coupled to the support 363 so as to be linearly movable along the support 363 in the third direction 16. The support base 363 has a length extending from a position corresponding to the second buffer 330 to a position corresponding to the first buffer 320. The support member 363 may be provided longer in the upward or downward direction. The first buffer robot 360 may be provided so that the hand 361 is simply driven in two directions along the second direction 14 and the third direction 16.

The cooling chamber 350 cools the substrate W, respectively. The cooling chamber 350 has a housing 351 and a cooling plate 352. The cooling plate 352 has an upper surface on which the substrate W is placed and a cooling means 353 for cooling the substrate W. [ As the cooling means 353, various methods such as cooling with cooling water and cooling using a thermoelectric element can be used. In addition, the cooling chamber 350 may be provided with a lift pin assembly (not shown) for positioning the substrate W on the cooling plate 352. The housing 351 is provided with an index robot 220 so that the developing robot 482 provided in the index robot 220 and a developing module 402 to be described later can carry the substrate W into or out of the cooling plate 352 (Not shown) in the direction provided and the direction in which the developing robot 482 is provided. Further, the cooling chamber 350 may be provided with doors (not shown) for opening and closing the above-described opening.

The application and development module 400 performs a process of applying a photoresist on the substrate W before the exposure process and a process of developing the substrate W after the exposure process. The application and development module 400 has a generally rectangular parallelepiped shape. The coating and developing module 400 has a coating module 401 and a developing module 402. The application module 401 and the development module 402 are arranged so as to be partitioned into layers with respect to each other. According to one example, the application module 401 is located on top of the development module 402.

The application module 401 includes a process of applying a photosensitive liquid such as a photoresist to the substrate W and a heat treatment process such as heating and cooling for the substrate W before and after the resist application process. The application module 401 has a resist application chamber 410, a bake chamber 420, and a transfer chamber 430. The resist application chamber 410, the bake chamber 420, and the transfer chamber 430 are sequentially disposed along the second direction 14. [ The resist application chamber 410 and the bake chamber 420 are positioned apart from each other in the second direction 14 with the transfer chamber 430 interposed therebetween. A plurality of resist coating chambers 410 are provided, and a plurality of resist coating chambers 410 are provided in the first direction 12 and the third direction 16, respectively. In the figure, six resist coating chambers 410 are provided. A plurality of bake chambers 420 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, six bake chambers 420 are provided. Alternatively, however, the bake chamber 420 may be provided in a greater number.

The transfer chamber 430 is positioned in parallel with the first buffer 320 of the first buffer module 300 in the first direction 12. In the transfer chamber 430, a dispenser robot 432 and a guide rail 433 are positioned. The transfer chamber 430 has a generally rectangular shape. The applicator robot 432 is connected to the bake chambers 420, the resist application chambers 400, the first buffer 320 of the first buffer module 300, and the first buffer module 500 of the second buffer module 500 And transfers the substrate W between the cooling chambers 520. The guide rails 433 are arranged so that their longitudinal directions are parallel to the first direction 12. The guide rails 433 guide the applying robot 432 to move linearly in the first direction 12. The applicator robot 432 has a hand 434, an arm 435, a support 436, and a pedestal 437. The hand 434 is fixed to the arm 435. The arm 435 is provided in a stretchable configuration so that the hand 434 is movable in the horizontal direction. The support 436 is provided so that its longitudinal direction is disposed along the third direction 16. The arm 435 is coupled to the support 436 so as to be linearly movable in the third direction 16 along the support 436. The support 436 is fixedly coupled to the pedestal 437 and the pedestal 437 is coupled to the guide rail 433 so as to be movable along the guide rail 433.

The resist coating chambers 410 all have the same structure. However, the types of the photoresist used in each of the resist coating chambers 410 may be different from each other. As an example, a chemical amplification resist may be used as the photoresist. The resist application chamber 410 is provided with a substrate processing apparatus for applying a photoresist on the substrate W. [ The substrate processing apparatus 800 is subjected to a liquid coating process. FIG. 6 is a plan view showing the substrate processing apparatus of FIG. 2, and FIG. 7 is a sectional view showing the substrate processing apparatus of FIG. 6 and 7, the substrate processing apparatus 800 includes a housing 810, an airflow providing unit 820, a substrate supporting unit 830, a processing vessel 850, a lift unit 890, An exhaust unit 840, an exhaust unit 885, and a controller 880.

The housing 810 is provided in a rectangular tubular shape having a processing space 812 therein. An opening (not shown) is formed at one side of the housing 810. The opening serves as an inlet through which the substrate W is carried in and out. The opening is provided with a door, and the door opens and closes the opening. When the substrate processing process is completed, the door is closed to seal the processing space 812 of the housing 810. An inner exhaust port 814 and an outer exhaust port 816 are formed on the lower surface of the housing 810. The airflow formed in the housing 810 is exhausted to the outside through the inner exhaust port 814 and the outer exhaust port 816. According to one example, the airflow provided in the processing vessel 850 is exhausted through the inner exhaust port 814, and the airflow provided outside the processing vessel 850 can be exhausted through the outer exhaust port 816.

The airflow providing unit 820 forms a downward flow in the processing space 812 of the housing 810. The airflow providing unit 820 includes an airflow supply line 822, a fan 824, and a filter 826. The airflow supply line 822 is connected to the housing 810. The air flow supply line 822 supplies external clean air to the housing 810. The filter 826 filters the clean air provided from the airflow supply line 822. The filter 826 removes impurities contained in the air. The fan 824 is mounted on the upper surface of the housing 810. The fan 824 is located in a central region in the upper surface of the housing 810. The fan 824 forms a downward flow in the processing space 812 of the housing 810. When clean air is supplied to the fan 824 from the airflow supply line 822, the fan 824 supplies the clean air in the downward direction. According to one example, the fan 824 can supply air to the processing space at different flow rates in accordance with the substrate processing step.

The substrate support unit 830 supports the substrate W in the processing space 812 of the housing 810. The substrate support unit 830 rotates the substrate W. The substrate support unit 830 includes a spin chuck 832, a rotation axis 834, and a driver 836. The spin chuck 832 is provided with a substrate support member 832 for supporting the substrate. The spin chuck 832 is provided to have a circular plate shape. The substrate W contacts the upper surface of the spin chuck 832. The spin chuck 832 is provided so as to have a smaller diameter than the substrate W. [ According to one example, the spin chuck 832 can vacuum-suck the substrate W and chuck the substrate W. Alternatively, the spin chuck 832 may be provided with an electrostatic chuck for chucking the substrate W using static electricity. The spin chuck 832 can also chuck the substrate W by physical force.

The rotation shaft 834 and the driver 836 are provided as rotation drive members 834 and 836 for rotating the spin chuck 832. [ The rotating shaft 834 supports the spin chuck 832 below the spin chuck 832. The rotary shaft 834 is provided such that its longitudinal direction is directed up and down. The rotation shaft 834 is provided so as to be rotatable about its central axis. The driver 836 provides a driving force such that the rotation shaft 834 is rotated. For example, the driver 836 may be a motor capable of varying the rotational speed of the rotating shaft. The rotation drive members 834 and 836 can rotate the spin chucks 832 at different rotational speeds according to the substrate processing steps.

The processing vessel 850 is located in the processing space 812 of the housing 810. A processing vessel 850 provides for enclosing the substrate support unit 830. The processing vessel 850 is provided so that the upper portion thereof has an open cup shape. The processing vessel 850 includes an inner cup 852 and an outer cup 862.

The inner cup 852 is provided in the shape of a circular cup that surrounds the rotation shaft 834. The inner cup 852 is positioned to overlap the inner vent 814 when viewed from above. The upper surface of the inner cup 852 is provided such that its outer and inner regions are inclined at different angles from each other. According to one example, the outer region of the inner cup 852 is oriented downwardly away from the substrate support unit 830, and the inner region is oriented in an upward sloping direction away from the substrate support unit 830 Lt; / RTI > A point where the outer region and the inner region of the inner cup 852 meet with each other is vertically provided in correspondence with the side end portion of the substrate W. [ The upper surface area of the inner cup 852 is provided to be rounded. The upper surface area of the inner cup 852 is provided downwardly concave. The upper surface area of the inner cup 852 may be provided in a region where the processing liquid flows.

The outer cup 862 is provided to have a cup shape that encloses the substrate support unit 830 and the inner cup 852. The outer cup 862 has a bottom wall 864, a side wall 866, a top wall 870, and an inclined wall 870. The bottom wall 864 is provided to have a circular plate shape having a hollow. A collection line 865 is formed in the bottom wall 864. The recovery line 865 recovers the treatment liquid supplied on the substrate W. [ The treatment liquid recovered by the recovery line 865 can be reused by an external liquid recovery system. The side wall 866 is provided to have a circular tubular shape surrounding the substrate supporting unit 830. The side wall 866 extends in a vertical direction from the side edge of the bottom wall 864. The side wall 866 extends upwardly from the bottom wall 864.

The inclined wall 870 extends inward of the outer cup 862 from the top of the side wall 866. The inclined wall 870 is provided so as to approach the substrate supporting unit 830 upward. The inclined wall 870 is provided so as to have a ring shape. The upper end of the inclined wall 870 is positioned higher than the substrate W supported on the substrate supporting unit 830. [

The elevating unit 890 lifts the inner cup 852 and the outer cup 862, respectively. The elevating unit 890 includes an inside moving member 892 and an outside moving member 894. The inner moving member 892 lifts the inner cup 852 and the outer moving member 894 moves the outer cup 862 up and down.

The liquid supply unit 840 supplies the treatment liquid and the pre-wetting liquid onto the substrate W. The liquid supply unit 840 includes a plurality of guide members 846 and arms 848, a wetting nozzle 842, and a process liquid nozzle 844. The guide member 846 includes a guide rail 846 that moves the arm 848 in the horizontal direction. The guide rails 846 are located on one side of the processing vessel. The guide rail 846 is provided such that its longitudinal direction is directed to the horizontal direction. According to one example, one of the plurality of guide rails 846 may be oriented in a direction in which the longitudinal direction is parallel to the first direction, and the other direction may be in the direction in which the longitudinal direction is parallel to the second direction. Each guide rail 846 is provided with an arm 848. The arm 848 can be moved by a linear motor provided inside the guide rail 846. The arm 848 is provided to face the longitudinal direction perpendicular to the guide rail 846 when viewed from above. One end of the arm 848 is mounted to the guide rail 846. The weighting nozzle 842 and the treatment liquid nozzle 844 are provided on the bottom surface of the other end of the arm 848, which are different from each other. The wetting nozzles 842 and the process liquid nozzles 844 are arranged in a direction parallel to the longitudinal direction of the guide rails 846 when viewed from above. Optionally, a plurality of arms 848 are provided, and each of the arms 848 may be provided with a wetting nozzle 842 and a process liquid nozzle 844. Also, the arm 848 may be swingably coupled to a rotational shaft whose longitudinal direction is directed to the third direction.

 The wetting nozzle 842 supplies the prewetting liquid onto the substrate W and the treatment liquid nozzle 844 supplies the treatment liquid onto the substrate W. [ For example, the prewetting liquid may be a liquid that can change the surface properties of the substrate W. The prewetting liquid can change the surface of the substrate W into a hydrophobic property. The prewetting liquid may be a thinner, and the treatment liquid may be a sensitizing liquid such as a photoresist. When the surface of the substrate becomes hydrophobic by the prewetting liquid, the treatment liquid can form a liquid film on the substrate.

 Each of the wetting nozzle 842 and the treatment liquid nozzle 844 supplies the prewetting liquid and the treatment liquid to the central position of the substrate W. [ Each of the wetting nozzle 842 and the treatment liquid nozzle 844 is provided such that the discharge port thereof is oriented in the vertical downward direction. Here, the center position is a position where the supply position of the liquid corresponds to the center of the substrate W. Alternatively, the discharge port of the wetting nozzle 842 may be provided so as to face downwardly inclined direction.

The exhaust unit 885 evacuates the processing space 812. The exhaust unit 885 decompresses the processing space 812 through the inner exhaust port 814 and the outer exhaust port 816. The exhaust unit 885 includes an exhaust line 886 and a pressure reducing member 888. The exhaust line 886 is connected to the inner exhaust port 814 and the outer exhaust port 816, respectively. The pressure reducing member 888 evacuates the exhaust line 886 at different exhaust pressures in accordance with the substrate W processing step.

The controller 880 controls the airflow supply unit 820, the substrate support unit 830, and the exhaust unit 885, respectively. The controller 880 sequentially performs the prewetting step S10, the liquid supply step S20, the thickness control step S30 and the drying step S40 to form a liquid film on the substrate W, The rotation speed of the substrate W, and the exhaust pressure of the processing space 812 can be controlled.

According to one example, the controller 880 adjusts the fan such that the downward flow is supplied at the first flow rate Va1 in the prewetting step S10, the liquid supply step S20, and the drying step S40, In step S30, the fan can be adjusted so that the downward flow is supplied to the second flow velocity Va2. The second flow velocity Va2 may be provided at a velocity slower than the first flow velocity Va1. The first flow rate Va1 may be 0.2 m / s, and the second flow rate Va2 may be 0.1 to 0.05 m / s.

The controller 880 controls the substrate W at the pre-wetting step S10 at the pre-speed, the substrate W at the liquid supply step S20 to the first speed Vb₁, and the substrate W at the drying step S40. W) can be rotated at a drying speed. The thickness adjustment step S30 includes a reflow step S33 and a diffusion step S37 wherein the substrate W is heated at the second speed Vb2 in the reflow step S33 and at the second speed Vb2 at the diffusion step S37 The substrate W can be rotated at the third speed Vb3. The first speed Vb1 may be faster than the second speed Vb2 and may be slower than the third speed Vb3. The first speed Vb1 may be in the range of 1000 to 1500 RPM, the second speed Vb2 may be in the range of 0 to 100 RPM and the third speed Vb3 may be in the range of 1000 to 1800 RPM.

The controller 880 can exhaust the processing space 812 at a pressure smaller than that of each of the pre-wetting step S10, the liquid supplying step S20, and the drying step S40 in the thickness control step S30. That is, the processing space 812 can form a higher pressure than the pre-wetting step S10, the liquid supplying step S20, the thickness adjusting step S30, and the drying step S40 in the thickness adjusting step S30. In the prewetting step S10, the processing space 812 is exhausted to the first pressure P1, the processing space 812 is exhausted to the second pressure P2 in the liquid supply step S20, The processing space 812 is exhausted to the third pressure P3 in the step S30 and the processing space 812 is exhausted to the fourth pressure P4 in the drying step S40. The first pressure P1 is 100 pascals and the second pressure P2 is 50 pascals and the third pressure P3 is 30 pascals and the fourth pressure P4 is 100 Pascal (Pa).

Next, a process of forming a liquid film on the substrate W by using the above-described substrate processing apparatus will be described. As a method of forming a liquid film on the substrate W, a prewetting step S10, a liquid supplying step S20, a thickness adjusting step S30, and a drying step S40 are sequentially performed. FIGS. 8 to 10 are graphs showing the flow rate, the exhaust pressure, and the rotation speed of the downward airflow varying according to the respective process steps in the process of forming the liquid film. Referring to FIGS. 8 to 10, in the prewetting step S10, a wetting liquid is supplied onto the substrate W to convert the surface of the substrate W into a wet state. The wetting solution makes the surface of the substrate W hydrophobic. The substrate W is rotated at a free speed and a downward flow having a first flow velocity Va1 is formed in the processing space 812. [ The processing space 812 evacuates to the first exhaust pressure. When the prewetting step S10 is completed, the liquid supply step S20 is performed.

In the liquid supply step S20, a treatment liquid is supplied onto the substrate W to form a liquid film. The substrate W is rotated at the first speed Vb1 and the downward flow is maintained at the same first flow rate Va1 as the prewetting step S10. And the processing space 812 is exhausted to the second pressure P2. When the solution supplying step S20 is completed, the thickness adjusting step S30 is performed.

In the thickness control step S30, the thickness of the treatment liquid film supplied on the substrate W is adjusted. The thickness adjustment step S30 includes a reflow step S33 and a diffusion step S37, which proceed sequentially. The reflow step S33 is a step of adjusting the thickness of the liquid film so that the liquid film is moved in the direction from the edge to the center. In the reflow step S33, the substrate W is rotated at the second speed Vb2 and the processing space 812 is provided with a descending airflow having the second flow velocity Va2. The processing space 812 includes the third And is exhausted to the pressure P3.

When the reflow step S33 is completed, the diffusion step S37 proceeds. The diffusion step S37 is a step of adjusting the thickness of the liquid film so that the liquid film moves in the radial direction from the center to the edge. In the diffusion step S37, the substrate W is rotated at the third speed Vb3 and the downward flow is maintained at the second flow rate Va2, which is the same as the reflow step S33. And the processing space 812 is evacuated to the third pressure P3. When the diffusion step S37 is completed, the drying step S40 proceeds.

The drying step (S40) is a step of drying the liquid film formed on the substrate (W). In the drying step S40, the substrate W is rotated at a drying speed. The drying rate can be varied at various rates during the drying process. For example, the drying rate may be 180 to 2000 RPM (alpha). During the drying process, the descending airflow is supplied to the first flow rate Va1, and the processing space 812 is exhausted to the fourth pressure P4.

A larger amount of airflow is formed in the edge area of the processing space 812 as compared with the central area of the substrate W. [ Accordingly, the liquid film may have a thicker edge region than the central region. In this embodiment, the flow rate of the down stream and the exhaust pressure can be reduced more than the liquid supply step (S20) in the step of adjusting the thickness of the liquid film, so that the edge area of the liquid film can be minimized to be thicker than the central area. In addition, in the reflow step S33, the substrate W is rotated at the second speed Vb2, which is slower than the first speed Vb1, so that the edge area of the liquid film is minimized to be thicker than the central area, Can be formed.

2 to 5, the bake chamber 420 heat-treats the substrate W. As shown in FIG. For example, the bake chambers 420 may be formed by a prebake process for heating the substrate W to a predetermined temperature to remove organic substances and moisture on the surface of the substrate W, A soft bake process is performed after coating the substrate W on the substrate W, and a cooling process for cooling the substrate W after each heating process is performed. The bake chamber 420 has a cooling plate 421 or a heating plate 422. The cooling plate 421 is provided with a cooling means 423 such as a cooling water or a thermoelectric element. The heating plate 422 is also provided with a heating means 424, such as a hot wire or a thermoelectric element. The cooling plate 421 and the heating plate 422 may be provided in a single bake chamber 420, respectively. Optionally, some of the bake chambers 420 may include only the cooling plate 421, and the other portions may include only the heating plate 422.

The developing module 402 includes a developing process for supplying a developing solution to obtain a pattern on the substrate W to remove a part of the photoresist and a heat treatment process such as heating and cooling performed on the substrate W before and after the developing process . The development module 402 has a development chamber 460, a bake chamber 470, and a transfer chamber 480. The development chamber 460, the bake chamber 470, and the transfer chamber 480 are sequentially disposed along the second direction 14. The development chamber 460 and the bake chamber 470 are positioned apart from each other in the second direction 14 with the transfer chamber 480 therebetween. A plurality of developing chambers 460 are provided, and a plurality of developing chambers 460 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, six development chambers 460 are provided. A plurality of bake chambers 470 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, six bake chambers 470 are provided. Alternatively, however, the bake chamber 470 can be provided in greater numbers.

The transfer chamber 480 is positioned in parallel with the second buffer 330 of the first buffer module 300 in the first direction 12. In the transfer chamber 480, the developing robot 482 and the guide rail 483 are positioned. The delivery chamber 480 has a generally rectangular shape. The development robot 482 is connected to the bake chambers 470 and the development chambers 460 and the second buffer 330 and the cooling chamber 350 of the first buffer module 300 and the second buffer module 500, And the second cooling chamber 540 of the second cooling chamber 540. The guide rail 483 is arranged such that its longitudinal direction is parallel to the first direction 12. The guide rail 483 guides the developing robot 482 to linearly move in the first direction 12. The developing sub-robot 482 has a hand 484, an arm 485, a supporting stand 486, and a pedestal 487. The hand 484 is fixed to the arm 485. The arm 485 is provided in a stretchable configuration to allow the hand 484 to move in a horizontal direction. The support 486 is provided so that its longitudinal direction is disposed along the third direction 16. The arm 485 is coupled to the support 486 such that it is linearly movable along the support 486 in the third direction 16. The support table 486 is fixedly coupled to the pedestal 487. The pedestal 487 is coupled to the guide rail 483 so as to be movable along the guide rail 483.

The development chambers 460 all have the same structure. However, the types of developers used in the respective developing chambers 460 may be different from each other. The development chamber 460 removes a region of the photoresist on the substrate W where light is irradiated. At this time, the area of the protective film irradiated with the light is also removed. Depending on the type of selectively used photoresist, only the areas of the photoresist and protective film that are not irradiated with light can be removed.

The development chamber 460 has a container 461, a support plate 462, and a nozzle 463. The container 461 has a cup shape with its top opened. The support plate 462 is located in the container 461 and supports the substrate W. The support plate 462 is rotatably provided. The nozzle 463 supplies the developer onto the substrate W placed on the support plate 462. The nozzle 463 has a circular tube shape and can supply developer to the center of the substrate W. [ Alternatively, the nozzle 463 may have a length corresponding to the diameter of the substrate W, and the discharge port of the nozzle 463 may be provided with a slit. Further, the developing chamber 460 may further be provided with a nozzle 464 for supplying a cleaning liquid such as deionized water to clean the surface of the substrate W to which the developer is supplied.

The bake chamber 470 heat-treats the substrate W. For example, the bake chambers 470 may include a post-bake process for heating the substrate W before the development process is performed, a hard bake process for heating the substrate W after the development process is performed, And a cooling step for cooling the wafer. The bake chamber 470 has a cooling plate 471 or a heating plate 472. The cooling plate 471 is provided with a cooling means 473 such as a cooling water or a thermoelectric element. Or the heating plate 472 is provided with a heating means 474 such as a hot wire or a thermoelectric element. The cooling plate 471 and the heating plate 472 may be provided in one bake chamber 470, respectively. Optionally, some of the bake chambers 470 may have only a cooling plate 471, while the other may have only a heating plate 472. [

As described above, in the application and development module 400, the application module 401 and the development module 402 are provided to be separated from each other. In addition, the application module 401 and the development module 402 may have the same chamber arrangement as viewed from above.

The second buffer module 500 is provided as a path through which the substrate W is transferred between the coating and developing module 400 and the pre- and post-exposure processing module 600. The second buffer module 500 performs a predetermined process on the substrate W such as a cooling process or an edge exposure process. The second buffer module 500 includes a frame 510, a buffer 520, a first cooling chamber 530, a second cooling chamber 540, an edge exposure chamber 550, and a second buffer robot 560 I have. The frame 510 has a rectangular parallelepiped shape. The buffer 520, the first cooling chamber 530, the second cooling chamber 540, the edge exposure chamber 550, and the second buffer robot 560 are located within the frame 510. The buffer 520, the first cooling chamber 530, and the edge exposure chamber 550 are disposed at a height corresponding to the application module 401. The second cooling chamber 540 is disposed at a height corresponding to the development module 402. The buffer 520, the first cooling chamber 530, and the second cooling chamber 540 are sequentially arranged in a row along the third direction 16. The buffer 520 is disposed along the first direction 12 with the transfer chamber 430 of the application module 401. [ The edge exposure chamber 550 is spaced a certain distance in the second direction 14 from the buffer 520 or the first cooling chamber 530.

The second buffer robot 560 carries the substrate W between the buffer 520, the first cooling chamber 530, and the edge exposure chamber 550. A second buffer robot 560 is positioned between the edge exposure chamber 550 and the buffer 520. The second buffer robot 560 may be provided in a structure similar to that of the first buffer robot 360. The first cooling chamber 530 and the edge exposure chamber 550 perform a subsequent process on the wafers W that have been processed in the application module 401. The first cooling chamber 530 cools the substrate W processed in the application module 401. The first cooling chamber 530 has a structure similar to the cooling chamber 350 of the first buffer module 300. The edge exposure chamber 550 exposes its edge to the wafers W that have undergone the cooling process in the first cooling chamber 530. The buffer 520 temporarily stores the substrate W before the substrates W processed in the edge exposure chamber 550 are transported to the preprocessing module 601 described later. The second cooling chamber 540 cools the wafers W before the wafers W processed in the post-processing module 602 described below are conveyed to the developing module 402. The second buffer module 500 may further have a buffer added to the height corresponding to the development module 402. In this case, the wafers W processed in the post-processing module 602 may be temporarily stored in the added buffer and then transferred to the developing module 402. [

The pre- and post-exposure processing module 600 may process a process of applying a protective film for protecting the photoresist film applied to the substrate W during liquid immersion exposure, when the exposure apparatus 900 performs the liquid immersion exposure process. In addition, the pre- and post-exposure processing module 600 may perform a process of cleaning the substrate W after exposure. In addition, when the coating process is performed using the chemically amplified resist, the pre- and post-exposure processing module 600 can process the post-exposure bake process.

The pre-exposure post-processing module 600 has a pre-processing module 601 and a post-processing module 602. The pre-processing module 601 performs a process of processing the substrate W before the exposure process, and the post-process module 602 performs a process of processing the substrate W after the exposure process. The pre-processing module 601 and the post-processing module 602 are arranged so as to be partitioned into layers with respect to each other. According to one example, the preprocessing module 601 is located on top of the post-processing module 602. The preprocessing module 601 is provided at the same height as the application module 401. The post-processing module 602 is provided at the same height as the developing module 402. The pretreatment module 601 has a protective film application chamber 610, a bake chamber 620, and a transfer chamber 630. The protective film application chamber 610, the transfer chamber 630, and the bake chamber 620 are sequentially disposed along the second direction 14. The protective film application chamber 610 and the bake chamber 620 are positioned apart from each other in the second direction 14 with the transfer chamber 630 therebetween. A plurality of protective film application chambers 610 are provided and are arranged along the third direction 16 to form layers. Alternatively, a plurality of protective film application chambers 610 may be provided in the first direction 12 and the third direction 16, respectively. A plurality of bake chambers 620 are provided and are disposed along the third direction 16 to form layers. Alternatively, a plurality of bake chambers 620 may be provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 630 is positioned in parallel with the first cooling chamber 530 of the second buffer module 500 in the first direction 12. In the transfer chamber 630, a pre-processing robot 632 is located. The transfer chamber 630 has a generally square or rectangular shape. The preprocessing robot 632 is connected between the protective film application chambers 610, the bake chambers 620, the buffer 520 of the second buffer module 500 and the first buffer 720 of the interface module 700, The substrate W is transferred. The preprocessing robot 632 has a hand 633, an arm 634, and a support 635. The hand 633 is fixed to the arm 634. The arm 634 is provided with a retractable structure and a rotatable structure. The arm 634 is coupled to the support 635 so as to be linearly movable along the support 635 in the third direction 16.

The protective film applying chamber 610 applies a protective film for protecting the resist film on the substrate W during liquid immersion exposure. The protective film application chamber 610 has a housing 611, a support plate 612, and a nozzle 613. The housing 611 has a cup shape with its top opened. The support plate 612 is located in the housing 611 and supports the substrate W. [ The support plate 612 is rotatably provided. The nozzle 613 supplies a protective liquid for forming a protective film onto the substrate W placed on the supporting plate 612. The nozzle 613 has a circular tube shape and can supply the protective liquid to the center of the substrate W. [ Alternatively, the nozzle 613 may have a length corresponding to the diameter of the substrate W, and the discharge port of the nozzle 613 may be provided with a slit. In this case, the support plate 612 may be provided in a fixed state. The protective liquid includes a foamable material. The protective liquid may be a photoresist and a material having a low affinity for water. For example, the protective liquid may contain a fluorine-based solvent. The protective film application chamber 610 supplies the protective liquid to the central region of the substrate W while rotating the substrate W placed on the support plate 612.

The bake chamber 620 heat-treats the substrate W coated with the protective film. The bake chamber 620 has a cooling plate 621 or a heating plate 622. The cooling plate 621 is provided with a cooling means 623 such as a cooling water or a thermoelectric element. Or heating plate 622 is provided with a heating means 624, such as a hot wire or a thermoelectric element. The heating plate 622 and the cooling plate 621 may be provided in a single bake chamber 620, respectively. Optionally, some of the bake chambers 620 may have only the heating plate 622, while others may only have the cooling plate 621.

The post-processing module 602 has a cleaning chamber 660, a post-exposure bake chamber 670, and a delivery chamber 680. The cleaning chamber 660, the transfer chamber 680, and the post-exposure bake chamber 670 are sequentially disposed along the second direction 14. Accordingly, the cleaning chamber 660 and the post-exposure baking chamber 670 are positioned apart from each other in the second direction 14 with the transfer chamber 680 therebetween. A plurality of cleaning chambers 660 are provided and may be disposed along the third direction 16 to form layers. Alternatively, a plurality of cleaning chambers 660 may be provided in the first direction 12 and the third direction 16, respectively. A plurality of post-exposure bake chambers 670 are provided and may be disposed along the third direction 16 to form layers. Alternatively, a plurality of post-exposure bake chambers 670 may be provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 680 is positioned in parallel with the second cooling chamber 540 of the second buffer module 500 in the first direction 12 as viewed from above. The transfer chamber 680 has a generally square or rectangular shape. A post processing robot 682 is located in the transfer chamber 680. The post-processing robot 682 is connected to the cleaning chambers 660, post-exposure bake chambers 670, the second cooling chamber 540 of the second buffer module 500, and the second And transfers the substrate W between the buffers 730. The postprocessing robot 682 provided in the postprocessing module 602 may be provided with the same structure as the preprocessing robot 632 provided in the preprocessing module 601. [

The cleaning chamber 660 cleans the substrate W after the exposure process. The cleaning chamber 660 has a housing 661, a support plate 662, and a nozzle 663. The housing 661 has a cup shape with an open top. The support plate 662 is located in the housing 661 and supports the substrate W. [ The support plate 662 is rotatably provided. The nozzle 663 supplies the cleaning liquid onto the substrate W placed on the support plate 662. As the cleaning liquid, water such as deionized water may be used. The cleaning chamber 660 supplies the cleaning liquid to the central region of the substrate W while rotating the substrate W placed on the support plate 662. Optionally, while the substrate W is rotating, the nozzle 663 may move linearly or rotationally from the central region of the substrate W to the edge region.

The post-exposure bake chamber 670 heats the substrate W subjected to the exposure process using deep UV light. The post-exposure baking step heats the substrate W and amplifies the acid generated in the photoresist by exposure to complete the property change of the photoresist. The post-exposure bake chamber 670 has a heating plate 672. The heating plate 672 is provided with a heating means 674 such as a hot wire or a thermoelectric element. The post-exposure bake chamber 670 may further include a cooling plate 671 therein. The cooling plate 671 is provided with a cooling means 673 such as a cooling water or a thermoelectric element. Further, a bake chamber having only the cooling plate 671 may be further provided.

As described above, the pre-processing module 601 and the post-processing module 602 in the pre-exposure processing module 600 are provided to be completely separated from each other. The transfer chamber 630 of the preprocessing module 601 and the transfer chamber 680 of the postprocessing module 602 are provided in the same size and can be provided so as to completely overlap each other when viewed from above. Further, the protective film application chamber 610 and the cleaning chamber 660 may be provided to have the same size as each other and be provided so as to completely overlap with each other when viewed from above. Further, the bake chamber 620 and the post-exposure bake chamber 670 are provided in the same size, and can be provided so as to completely overlap each other when viewed from above.

The interface module 700 transfers the substrate W between the exposure pre- and post-processing module 600 and the exposure apparatus 900. The interface module 700 has a frame 710, a first buffer 720, a second buffer 730, and an interface robot 740. The first buffer 720, the second buffer 730, and the interface robot 740 are located within the frame 710. The first buffer 720 and the second buffer 730 are spaced apart from each other by a predetermined distance and are stacked on each other. The first buffer 720 is disposed higher than the second buffer 730. The first buffer 720 is positioned at a height corresponding to the preprocessing module 601 and the second buffer 730 is positioned at a height corresponding to the postprocessing module 602. The first buffer 720 is arranged in a line along the first direction 12 with the transfer chamber 630 of the preprocessing module 601 while the second buffer 730 is arranged in the postprocessing module 602, Are arranged in a line along the first direction 12 with the transfer chamber 630 of the transfer chamber 630. [

The interface robot 740 is spaced apart from the first buffer 720 and the second buffer 730 in the second direction 14. The interface robot 740 carries the substrate W between the first buffer 720, the second buffer 730 and the exposure apparatus 900. The interface robot 740 has a structure substantially similar to that of the second buffer robot 560.

The first buffer 720 temporarily stores the substrates W processed in the preprocessing module 601 before they are transferred to the exposure apparatus 900. The second buffer 730 temporarily stores the processed substrates W in the exposure apparatus 900 before they are transferred to the post-processing module 602. The first buffer 720 has a housing 721 and a plurality of supports 722. The supports 722 are disposed within the housing 721 and are provided spaced apart from each other in the third direction 16. One substrate W is placed on each support 722. The housing 721 is movable in the direction in which the interface robot 740 is provided and in the direction in which the interface robot 740 and the preprocessing robot 632 transfer the substrate W to and from the support table 722, 632 are provided with openings (not shown) in the direction in which they are provided. The second buffer 730 has a structure substantially similar to that of the first buffer 720. However, the housing 4531 of the second buffer 730 has an opening (not shown) in the direction in which the interface robot 740 is provided and in a direction in which the postprocessing robot 682 is provided. The interface module may be provided with only buffers and robots as described above without providing a chamber to perform a predetermined process on the wafer.

Next, an example of performing the process using the above-described substrate processing apparatus 1 will be described.

The cassette 20 in which the wafers W are accommodated is placed on the mount 120 of the load port 100. [ The door of the cassette 20 is opened by the door opener. The index robot 220 removes the substrate W from the cassette 20 and transfers it to the second buffer 330.

The first buffer robot 360 carries the substrate W stored in the second buffer 330 to the first buffer 320. The application robot 432 removes the substrate W from the first buffer 320 and transfers the wafer W to the bake chamber 420 of the application module 401. The bake chamber 420 sequentially performs a pre-bake and a cooling process. The application part robot 432 removes the substrate W from the bake chamber 420 and transfers it to the resist application chamber 410. The resist coating chamber 410 applies a photoresist on the substrate W. [ Then, when the photoresist is applied onto the substrate W, the application part robot 432 carries the substrate W from the resist application chamber 410 to the bake chamber 420. The bake chamber 420 performs a soft bake process on the substrate W.

The application robot 432 removes the substrate W from the bake chamber 420 and transfers the substrate W to the first cooling chamber 530 of the second buffer module 500. A cooling process is performed on the substrate W in the first cooling chamber 530. [ The substrate W processed in the first cooling chamber 530 is transported to the edge exposure chamber 550 by the second buffer robot 560. The edge exposure chamber 550 performs a process of exposing an edge region of the substrate W. [ The substrate W having been processed in the edge exposure chamber 550 is transferred to the buffer 520 by the second buffer robot 560.

The preprocessing robot 632 takes the substrate W from the buffer 520 and transfers it to the protective film application chamber 610 of the preprocessing module 601. The protective film applying chamber 610 applies a protective film on the substrate W. [ Thereafter, the pre-processing robot 632 carries the substrate W from the protective film application chamber 610 to the bake chamber 620. The bake chamber 620 performs a heat treatment on the substrate W such as heating and cooling.

The preprocessing robot 632 takes the substrate W out of the bake chamber 620 and transfers it to the first buffer 720 of the interface module 700. The interface robot 740 carries the wafer from the first buffer 720 to the inversion unit 840 of the processing module 800. The inversion unit 840 inverts the wafer so that the first side (pattern side) of the wafer faces downward. The inverted wafer is loaded on the spin chuck 810, and the loaded wafer is chucked by the pin members 811a and 811b.

An inert gas such as nitrogen gas is injected onto the first surface of the wafer through the injection holes 852 formed in the support plate 812 of the spin chuck 810 and then is injected into the first surface of the wafer through the injection holes 852 with deionized water The rinsing liquid is sprayed. The rinse liquid may be sprayed onto the first side of the wafer through the injection holes 852 with the gas. Upon injection of the gas and / or rinse liquid to the first side of the wafer, the spin chuck 810 may be rotated and otherwise not rotated. Then, the rinse liquid spray unit 860 sprays rinsing liquid onto the second surface of the wafer.

The wafer is then transferred from the processing module 800 to the first buffer 720 by the interface robot 740 and then transferred from the first buffer 720 to the exposure apparatus 900. The exposure apparatus 900 performs an exposure process, for example, a liquid immersion exposure process, on the first surface of the wafer. When the exposure process for the substrate W is completed in the exposure apparatus 900, the interface robot 740 carries the substrate W from the exposure apparatus 900 to the second buffer 730.

The postprocessing robot 682 takes the substrate W from the second buffer 730 and transfers it to the cleaning chamber 660 of the postprocessing module 602. The cleaning chamber 660 supplies a cleaning liquid to the surface of the substrate W to perform a cleaning process. After the cleaning of the substrate W using the cleaning liquid is completed, the post-processing robot 682 immediately removes the substrate W from the cleaning chamber 660 and transports the substrate W to the post-exposure bake chamber 670. The cleaning liquid adhered on the substrate W is removed by heating the substrate W in the heating plate 672 of the post-exposure bake chamber 670 while the acid generated in the photoresist is amplified, The property change of the resist is completed. The post-processing robot 682 carries the substrate W from the post-exposure baking chamber 670 to the second cooling chamber 540 of the second buffer module 500. Cooling of the substrate W in the second cooling chamber 540 is performed.

The developing robot 482 takes the substrate W from the second cooling chamber 540 and transfers it to the bake chamber 470 of the developing module 402. [ The bake chamber 470 sequentially performs post bake and cooling processes. The developing sub-robot 482 takes the substrate W from the bake chamber 470 and transfers it to the developing chamber 460. The development chamber 460 supplies a developer onto the substrate W to perform a development process. The developing robot 482 carries the substrate W from the developing chamber 460 to the bake chamber 470. [ The bake chamber 470 performs a hard bake process on the substrate W.

The development robot 482 takes the substrate W from the bake chamber 470 and transfers it to the cooling chamber 350 of the first buffer module 300. [ The cooling chamber 350 performs a process of cooling the substrate W. [ The index robot 360 carries the substrate W from the cooling chamber 350 to the cassette 20. The development robot 482 removes the substrate W from the bake chamber 470 and transports the substrate W to the second buffer 330 of the first buffer module 300, 20). ≪ / RTI >

810: Housing 820: Air flow providing unit
830: substrate support unit 840: liquid supply unit
850: Processing vessel 880:
885: exhaust unit 890: elevating unit

Claims (11)

A method of forming a liquid film on a substrate in a processing space in which a downward flow generated by a fan is provided,
A liquid supplying step of supplying a processing liquid onto the substrate;
A pre-wetting step of supplying a pre-wetting liquid onto the substrate to convert the surface of the substrate into a wet state before the liquid supply step;
Adjusting a thickness of the liquid film formed on the substrate after the liquid supplying step;
And a drying step of drying the liquid film on the substrate after the thickness adjusting step,
Supplying the descending airflow at a first flow rate to the liquid supply step, the pre-wetting step, and the drying step,
Wherein the thickness adjusting step supplies the downward flow at a second flow rate different from the first flow rate,
Wherein the second flow rate is provided at a slower rate than the first flow rate,
Wherein the first flow rate and the second flow rate are provided by speed regulation of the fan,
Wherein the liquid supply step rotates the substrate at a first speed,
Wherein the thickness adjusting step comprises:
A reflow step of rotating the substrate at a second speed;
And a diffusion step of rotating the substrate at a third speed,
Wherein the first speed is faster than the second speed, slower than the third speed,
Wherein the processing space is exhausted in each of the prewetting step, the liquid supplying step, the thickness adjusting step, and the drying step,
Wherein the pre-wetting step exhausts the processing space with a first pressure,
The processing space is evacuated to a second pressure in the liquid supply step,
Wherein the thickness adjusting step discharges the processing space with a third pressure,
Wherein the second pressure is less than the first pressure and greater than the third pressure. delete The method according to claim 1,
Wherein the first flow rate is 0.2 m / s and the second flow rate is 0.1 to 0.05 m / s. delete The method according to claim 1,
Wherein the prewetting liquid comprises thinner,
Wherein the treatment liquid comprises a photosensitive liquid. delete delete A housing having a processing space;
A substrate supporting unit for supporting and rotating the substrate in the processing space;
A liquid supply unit having a processing liquid nozzle for supplying a processing liquid onto a substrate supported by the substrate supporting unit;
An airflow forming unit for forming a downward airflow in the processing space;
A processing vessel enclosing the substrate support unit in the processing space and having an upper portion opened;
An exhaust unit for exhausting an inner space of the processing vessel;
And a controller for controlling the airflow forming unit and the liquid supply unit,
The liquid supply unit includes:
Further comprising a wetting nozzle for supplying a prewetting liquid onto a substrate supported by the substrate supporting unit,
The controller comprising:
A liquid supplying step of supplying a treatment liquid onto the substrate, and a thickness adjusting step of adjusting a thickness of the liquid film formed on the substrate,
A pre-wetting step of converting the surface of the substrate into a wet state before the liquid supplying step, and a drying step of drying the liquid film on the substrate after the thickness adjusting step,
Wherein the airflow forming unit supplies the downflow airflow to the airflow forming unit so that the downflow airflow is supplied to the airflow forming unit at the preheating step, the liquid supply step, and the drying step at a first flow rate, and the thickness adjusting step supplies the downflow airflow at a second flow rate different from the first flow rate. Lt; / RTI >
Wherein the liquid supply step rotates the substrate at a first speed,
The thickness adjustment step may further include a reflow step and a diffusion step,
Wherein the reflow step rotates the substrate at a second speed,
Wherein the diffusing step controls the substrate support unit to rotate the substrate at a third speed,
Wherein the first speed is faster than the second speed, slower than the third speed,
Further controlling the exhaust unit to exhaust the processing space in the pre-wetting step, the liquid supplying step, and the drying step in the thickness adjusting step,
Wherein the pre-wetting step exhausts the processing space with a first pressure,
The processing space is evacuated to a second pressure in the liquid supply step,
And controlling the exhaust unit to exhaust the processing space with a third pressure in the thickness adjusting step,
Wherein the second pressure is less than the first pressure, greater than the third pressure,
The airflow forming unit includes:
An air flow supply line for supplying clean air to the processing space;
A fan installed in the air flow supply line for adjusting a flow rate of clean air;
And a filter installed in the air flow supply line for filtering foreign matters contained in the clean air,
Wherein the controller controls the fan such that the second flow rate has a slower rate than the first flow rate.
delete delete delete

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