KR20180134916A - 연마재, 연마용 조성물 및 연마 방법 - Google Patents

연마재, 연마용 조성물 및 연마 방법 Download PDF

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Publication number
KR20180134916A
KR20180134916A KR1020187030242A KR20187030242A KR20180134916A KR 20180134916 A KR20180134916 A KR 20180134916A KR 1020187030242 A KR1020187030242 A KR 1020187030242A KR 20187030242 A KR20187030242 A KR 20187030242A KR 20180134916 A KR20180134916 A KR 20180134916A
Authority
KR
South Korea
Prior art keywords
polishing
acid
polished
alloy
less
Prior art date
Application number
KR1020187030242A
Other languages
English (en)
Korean (ko)
Inventor
히토시 모리나가
가즈세이 다마이
마이코 아사이
유이치 이토
교스케 덴코
도루 가마다
Original Assignee
가부시키가이샤 후지미인코퍼레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 후지미인코퍼레이티드 filed Critical 가부시키가이샤 후지미인코퍼레이티드
Publication of KR20180134916A publication Critical patent/KR20180134916A/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
KR1020187030242A 2016-04-26 2017-01-27 연마재, 연마용 조성물 및 연마 방법 KR20180134916A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2016088332 2016-04-26
JPJP-P-2016-088332 2016-04-26
JP2016152270A JP6096969B1 (ja) 2016-04-26 2016-08-02 研磨材、研磨用組成物、及び研磨方法
JPJP-P-2016-152270 2016-08-02
PCT/JP2017/003017 WO2017187689A1 (ja) 2016-04-26 2017-01-27 研磨材、研磨用組成物、及び研磨方法

Publications (1)

Publication Number Publication Date
KR20180134916A true KR20180134916A (ko) 2018-12-19

Family

ID=58281179

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187030242A KR20180134916A (ko) 2016-04-26 2017-01-27 연마재, 연마용 조성물 및 연마 방법

Country Status (5)

Country Link
US (1) US10920104B2 (ja)
JP (1) JP6096969B1 (ja)
KR (1) KR20180134916A (ja)
TW (1) TWI808935B (ja)
WO (1) WO2017187689A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220017821A1 (en) * 2020-07-13 2022-01-20 Advansix Resins & Chemicals Llc Branched amino acid surfactants for electronics products
TW202235557A (zh) * 2021-01-26 2022-09-16 美商Ｃｍｃ材料股份有限公司 用於拋光硼摻雜之多晶矽之組合物及方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU1177288A (en) * 1987-02-19 1988-08-25 Keramont Research Corp. Process for obtaining alpha-alumina powders with submicron median particle size
JPH01246068A (ja) 1988-03-29 1989-10-02 Kobe Steel Ltd アルミニウム合金基板の鏡面仕上げ方法
US5300130A (en) 1993-07-26 1994-04-05 Saint Gobain/Norton Industrial Ceramics Corp. Polishing material
JPH0752030A (ja) 1993-08-13 1995-02-28 Kobe Steel Ltd 陽極酸化処理基盤及び研磨方法
JP3296091B2 (ja) * 1994-06-15 2002-06-24 住友化学工業株式会社 研磨材用αアルミナ及びその製造方法
DE19503854C2 (de) 1995-02-06 1997-02-20 Starck H C Gmbh Co Kg Verfahren zur Herstellung gesinterter alpha-Al¶2¶O¶3¶-Körper sowie deren Verwendung
MY124578A (en) 1997-06-17 2006-06-30 Showa Denko Kk Magnetic hard disc substrate and process for manufacturing the same
JP3472687B2 (ja) 1997-06-17 2003-12-02 昭和電工株式会社 磁気ディスク基板の製造方法
JP2005190634A (ja) * 2003-12-26 2005-07-14 Fuji Photo Film Co Ltd 磁気記録媒体
JP4753710B2 (ja) * 2005-12-22 2011-08-24 花王株式会社 ハードディスク基板用研磨液組成物
JP2008044078A (ja) 2006-08-18 2008-02-28 Sumitomo Metal Mining Co Ltd サファイア基板の研磨方法
JP5283249B2 (ja) * 2006-12-27 2013-09-04 花王株式会社 研磨液組成物の製造方法
JP5570685B2 (ja) * 2007-03-16 2014-08-13 花王株式会社 ハードディスク基板用研磨液組成物
JP5031446B2 (ja) * 2007-05-30 2012-09-19 花王株式会社 ハードディスク基板用研磨液組成物
JP2008307676A (ja) * 2007-06-18 2008-12-25 Kao Corp ハードディスク基板用研磨液組成物
JP2009163810A (ja) * 2007-12-28 2009-07-23 Kao Corp ハードディスク基板の製造方法
US8404009B2 (en) 2007-10-29 2013-03-26 Kao Corporation Polishing composition for hard disk substrate
JP4981750B2 (ja) * 2007-10-29 2012-07-25 花王株式会社 ハードディスク基板用研磨液組成物
JP6177682B2 (ja) * 2013-12-24 2017-08-09 花王株式会社 研磨液組成物
JP2015227446A (ja) * 2014-05-08 2015-12-17 花王株式会社 サファイア板用研磨液組成物
JPWO2016043089A1 (ja) * 2014-09-16 2017-08-10 山口精研工業株式会社 サファイア基板用研磨剤組成物
WO2016043088A1 (ja) * 2014-09-16 2016-03-24 山口精研工業株式会社 サファイア基板用研磨剤組成物

Also Published As

Publication number Publication date
WO2017187689A1 (ja) 2017-11-02
JP6096969B1 (ja) 2017-03-15
JP2017197707A (ja) 2017-11-02
US10920104B2 (en) 2021-02-16
US20190153263A1 (en) 2019-05-23
TW201741412A (zh) 2017-12-01
TWI808935B (zh) 2023-07-21

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