KR20180084711A - 열전 레그 및 이를 포함하는 열전 소자 - Google Patents

열전 레그 및 이를 포함하는 열전 소자 Download PDF

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Publication number
KR20180084711A
KR20180084711A KR1020180082564A KR20180082564A KR20180084711A KR 20180084711 A KR20180084711 A KR 20180084711A KR 1020180082564 A KR1020180082564 A KR 1020180082564A KR 20180082564 A KR20180082564 A KR 20180082564A KR 20180084711 A KR20180084711 A KR 20180084711A
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South Korea
Prior art keywords
thermo electric
same
leg
layer
metal substrate
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KR1020180082564A
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KR102170478B1 (ko
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츠요시 토쇼
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엘지이노텍 주식회사
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Publication of KR20180084711A publication Critical patent/KR20180084711A/ko
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Publication of KR102170478B1 publication Critical patent/KR102170478B1/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/82—Connection of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H01L35/02—
    • H01L35/12—
    • H01L35/16—
    • H01L35/18—
    • H01L35/32—
    • H01L35/34—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Powder Metallurgy (AREA)
  • Chemically Coating (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

본 발명의 한 실시예에 따른 열전 레그의 제조 방법은 제 1 금속 기판을 준비하는 단계, 상기 제 1 금속 기판 상에 제 1 도금층을 형성하는 단계, 상기 제 1 도금층 상에 Te를 포함하는 제 1 접합층을 형성하는 단계, 상기 제 1 접합층 상면에 Bi 및 Te를 포함하는 열전 소재층을 배치하는 단계, 상기 열전 소재층 상에 제2 접합층 및 제2 도금층이 형성된 제 2 금속기판을 배치하는 단계, 그리고 소결하는 단계를 포함한다.
KR1020180082564A 2016-06-01 2018-07-16 열전 레그 및 이를 포함하는 열전 소자 KR102170478B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020160068345 2016-06-01
KR20160068345 2016-06-01

Related Parent Applications (1)

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KR1020170068656A Division KR101931634B1 (ko) 2016-06-01 2017-06-01 열전 레그 및 이를 포함하는 열전 소자

Publications (2)

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KR20180084711A true KR20180084711A (ko) 2018-07-25
KR102170478B1 KR102170478B1 (ko) 2020-10-28

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KR1020170068656A KR101931634B1 (ko) 2016-06-01 2017-06-01 열전 레그 및 이를 포함하는 열전 소자
KR1020180082564A KR102170478B1 (ko) 2016-06-01 2018-07-16 열전 레그 및 이를 포함하는 열전 소자

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Country Link
US (2) US11233187B2 (ko)
EP (2) EP3852157A3 (ko)
JP (1) JP6987077B2 (ko)
KR (2) KR101931634B1 (ko)
CN (1) CN109219893B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022169072A1 (ko) * 2021-02-08 2022-08-11 한국재료연구원 전기도금법으로 형성된 접합층 및 확산방지 구조를 포함하는 소자 및 이의 제조방법

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102621998B1 (ko) * 2019-03-29 2024-01-08 엘지이노텍 주식회사 열전 레그 및 이를 포함하는 열전 소자
KR102691037B1 (ko) 2019-05-17 2024-08-02 한국전력공사 열전소재의 도금층 형성 방법 및 그 열전소재
CN110690341B (zh) * 2019-09-27 2022-10-21 中国科学院合肥物质科学研究院 一种热电材料及其制备方法
CN110707205B (zh) * 2019-09-27 2023-09-29 太原理工大学 一种提升Te基热电接头性能的方法

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JPH11121813A (ja) * 1997-10-14 1999-04-30 Kubota Corp 熱電素子及びその製造方法

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JPH10321919A (ja) * 1997-03-18 1998-12-04 Yamaha Corp Ｎｉ合金皮膜を有する熱電材料
JP2003282974A (ja) * 2002-03-26 2003-10-03 Yamaha Corp 熱電変換モジュール
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JPH1041553A (ja) * 1996-07-26 1998-02-13 Technova:Kk 熱電半導体およびその製造方法
JPH11121813A (ja) * 1997-10-14 1999-04-30 Kubota Corp 熱電素子及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022169072A1 (ko) * 2021-02-08 2022-08-11 한국재료연구원 전기도금법으로 형성된 접합층 및 확산방지 구조를 포함하는 소자 및 이의 제조방법

Also Published As

Publication number Publication date
EP3467888B1 (en) 2021-04-21
EP3467888A1 (en) 2019-04-10
EP3852157A2 (en) 2021-07-21
US20190214539A1 (en) 2019-07-11
US20200381605A1 (en) 2020-12-03
CN109219893B (zh) 2023-06-30
EP3852157A3 (en) 2021-07-28
KR20170136456A (ko) 2017-12-11
US11342490B2 (en) 2022-05-24
JP2019522349A (ja) 2019-08-08
JP6987077B2 (ja) 2021-12-22
EP3467888A4 (en) 2019-12-18
KR102170478B1 (ko) 2020-10-28
CN109219893A (zh) 2019-01-15
KR101931634B1 (ko) 2018-12-21
US11233187B2 (en) 2022-01-25

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