KR20180075667A - 고온 반도체 프로세싱에서의 클램핑을 위한 정전 척 및 그 제조 방법 - Google Patents

고온 반도체 프로세싱에서의 클램핑을 위한 정전 척 및 그 제조 방법 Download PDF

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Publication number
KR20180075667A
KR20180075667A KR1020187015747A KR20187015747A KR20180075667A KR 20180075667 A KR20180075667 A KR 20180075667A KR 1020187015747 A KR1020187015747 A KR 1020187015747A KR 20187015747 A KR20187015747 A KR 20187015747A KR 20180075667 A KR20180075667 A KR 20180075667A
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KR
South Korea
Prior art keywords
layer
semiconductor processing
plate layer
electrostatic chuck
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020187015747A
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English (en)
Korean (ko)
Inventor
브렌트 디. 에이. 엘리엇
프랑크 발마
마이클 파커
제이슨 스티븐스
굴리드 후센
Original Assignee
컴포넌트 알이-엔지니어링 컴퍼니, 인코포레이티드
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Publication of KR20180075667A publication Critical patent/KR20180075667A/ko
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722Details of electrostatic chucks
    • H01L21/6833
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/0008Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016Soldering of electronic components
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/008Soldering within a furnace
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/19Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/20Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • B23K1/206Cleaning
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23QDETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15Devices for holding work using magnetic or electric force acting directly on the work
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/003Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
    • H01L21/67103
    • H01L21/68757
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0432Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/42Printed circuits
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/18Dissimilar materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic materials other than metals or composite materials
    • B23K2103/52Ceramics
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic materials other than metals or composite materials
    • B23K2103/54Glass
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12Metallic interlayers
    • C04B2237/121Metallic interlayers based on aluminium
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32Ceramic
    • C04B2237/34Oxidic
    • C04B2237/343Alumina or aluminates
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32Ceramic
    • C04B2237/36Non-oxidic
    • C04B2237/366Aluminium nitride
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/68Forming laminates or joining articles wherein at least one substrate contains at least two different parts of macro-size, e.g. one ceramic substrate layer containing an embedded conductor or electrode

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020187015747A 2015-11-02 2016-11-02 고온 반도체 프로세싱에서의 클램핑을 위한 정전 척 및 그 제조 방법 Ceased KR20180075667A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562249559P 2015-11-02 2015-11-02
US62/249,559 2015-11-02
PCT/US2016/060169 WO2017079338A1 (en) 2015-11-02 2016-11-02 Electrostatic chuck for clamping in high temperature semiconductor processing and method of making same

Publications (1)

Publication Number Publication Date
KR20180075667A true KR20180075667A (ko) 2018-07-04

Family

ID=58662749

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Application Number Title Priority Date Filing Date
KR1020187015747A Ceased KR20180075667A (ko) 2015-11-02 2016-11-02 고온 반도체 프로세싱에서의 클램핑을 위한 정전 척 및 그 제조 방법

Country Status (6)

Country Link
US (2) US10593584B2 (https=)
EP (1) EP3371881B1 (https=)
JP (2) JP7240174B2 (https=)
KR (1) KR20180075667A (https=)
CN (1) CN108476006B (https=)
WO (1) WO2017079338A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3371881B1 (en) 2015-11-02 2023-02-15 Watlow Electric Manufacturing Company Electrostatic chuck for clamping in high temperature semiconductor processing and method of making the same
JP2020512691A (ja) * 2017-03-21 2020-04-23 コンポーネント リ−エンジニアリング カンパニー インコーポレイテッド 高い腐食性又は浸食性の半導体処理用途に使用するためのセラミック材料アセンブリ
KR102411272B1 (ko) * 2018-03-26 2022-06-22 엔지케이 인슐레이터 엘티디 정전척 히터
US10882130B2 (en) 2018-04-17 2021-01-05 Watlow Electric Manufacturing Company Ceramic-aluminum assembly with bonding trenches
JP7378210B2 (ja) * 2019-01-17 2023-11-13 新光電気工業株式会社 セラミック部材の製造方法
JP7341043B2 (ja) * 2019-12-06 2023-09-08 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US11302557B2 (en) * 2020-05-01 2022-04-12 Applied Materials, Inc. Electrostatic clamping system and method
CN113399858A (zh) * 2021-04-25 2021-09-17 郑州机械研究所有限公司 一种钎焊用复合钎料及其制备方法和硬质合金刀具
US20230230816A1 (en) * 2022-01-19 2023-07-20 Changxin Memory Technologies, Inc. Semiconductor device, semiconductor equipment, and semiconductor process method
CN116619268B (zh) * 2023-05-23 2026-04-21 北京烁科中科信电子装备有限公司 一种用于圆筒形样品的安装夹具及其使用方法
CN119501223B (zh) * 2024-10-22 2025-09-23 君原电子科技(海宁)有限公司 一种用于静电卡盘的真空钎焊方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5368220A (en) 1992-08-04 1994-11-29 Morgan Crucible Company Plc Sealed conductive active alloy feedthroughs
US5600530A (en) * 1992-08-04 1997-02-04 The Morgan Crucible Company Plc Electrostatic chuck
US5413360A (en) * 1992-12-01 1995-05-09 Kyocera Corporation Electrostatic chuck
JPH06291175A (ja) * 1993-04-01 1994-10-18 Kyocera Corp 静電チャック
US5535090A (en) 1994-03-03 1996-07-09 Sherman; Arthur Electrostatic chuck
JPH0870036A (ja) * 1994-08-29 1996-03-12 Souzou Kagaku:Kk 静電チャック
JPH08227933A (ja) * 1995-02-20 1996-09-03 Shin Etsu Chem Co Ltd 静電吸着機能を有するウエハ加熱装置
US5671116A (en) * 1995-03-10 1997-09-23 Lam Research Corporation Multilayered electrostatic chuck and method of manufacture thereof
JPH08279550A (ja) * 1995-04-07 1996-10-22 Souzou Kagaku:Kk 静電チャック
JPH09172057A (ja) * 1995-12-20 1997-06-30 Souzou Kagaku:Kk 静電チャック
JP3253002B2 (ja) 1995-12-27 2002-02-04 東京エレクトロン株式会社 処理装置
US6088213A (en) * 1997-07-11 2000-07-11 Applied Materials, Inc. Bipolar electrostatic chuck and method of making same
JP4013386B2 (ja) * 1998-03-02 2007-11-28 住友電気工業株式会社 半導体製造用保持体およびその製造方法
WO2002013227A1 (en) * 2000-07-27 2002-02-14 Ebara Corporation Sheet beam test apparatus
JP4493264B2 (ja) * 2001-11-26 2010-06-30 日本碍子株式会社 窒化アルミニウム質セラミックス、半導体製造用部材および耐蝕性部材
JP2003264223A (ja) 2002-03-08 2003-09-19 Rasa Ind Ltd 静電チャック部品および静電チャック装置およびその製造方法
MY137585A (en) 2003-03-19 2009-02-27 Systems On Silicon Mfg Company Pte Ltd A method of repairing a pedestal surface
JP2004349664A (ja) 2003-05-23 2004-12-09 Creative Technology:Kk 静電チャック
US7595972B2 (en) * 2004-04-09 2009-09-29 Varian Semiconductor Equipment Associates, Inc. Clamp for use in processing semiconductor workpieces
CN2922118Y (zh) * 2006-04-24 2007-07-11 北京中科信电子装备有限公司 一种用于晶片夹持的静电卡盘
JP5019811B2 (ja) 2006-07-20 2012-09-05 東京エレクトロン株式会社 静電吸着電極の補修方法
JP5087561B2 (ja) 2007-02-15 2012-12-05 株式会社クリエイティブ テクノロジー 静電チャック
JP2011222931A (ja) * 2009-12-28 2011-11-04 Tokyo Electron Ltd 載置台構造及び処理装置
US20130107415A1 (en) * 2011-10-28 2013-05-02 Applied Materials, Inc. Electrostatic chuck
US8932690B2 (en) * 2011-11-30 2015-01-13 Component Re-Engineering Company, Inc. Plate and shaft device
US9624137B2 (en) * 2011-11-30 2017-04-18 Component Re-Engineering Company, Inc. Low temperature method for hermetically joining non-diffusing ceramic materials
US8684256B2 (en) 2011-11-30 2014-04-01 Component Re-Engineering Company, Inc. Method for hermetically joining plate and shaft devices including ceramic materials used in semiconductor processing
CN107680918B (zh) 2012-09-19 2021-02-23 应用材料公司 接合基板的方法
US9589826B2 (en) * 2013-02-25 2017-03-07 Kyocera Corporation Sample holder
EP3371881B1 (en) 2015-11-02 2023-02-15 Watlow Electric Manufacturing Company Electrostatic chuck for clamping in high temperature semiconductor processing and method of making the same
TWI595220B (zh) * 2016-02-05 2017-08-11 群創光電股份有限公司 壓力感測裝置及其製造方法

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Publication number Publication date
US11222804B2 (en) 2022-01-11
JP2022050408A (ja) 2022-03-30
JP7240174B2 (ja) 2023-03-15
WO2017079338A1 (en) 2017-05-11
EP3371881B1 (en) 2023-02-15
CN108476006A (zh) 2018-08-31
EP3371881A4 (en) 2019-05-15
JP2018537002A (ja) 2018-12-13
US20200357676A1 (en) 2020-11-12
EP3371881A1 (en) 2018-09-12
JP7504857B2 (ja) 2024-06-24
US10593584B2 (en) 2020-03-17
CN108476006B (zh) 2022-04-15
US20170263486A1 (en) 2017-09-14

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