KR20170088752A - 레이저 가공 장치 - Google Patents
레이저 가공 장치 Download PDFInfo
- Publication number
- KR20170088752A KR20170088752A KR1020170000699A KR20170000699A KR20170088752A KR 20170088752 A KR20170088752 A KR 20170088752A KR 1020170000699 A KR1020170000699 A KR 1020170000699A KR 20170000699 A KR20170000699 A KR 20170000699A KR 20170088752 A KR20170088752 A KR 20170088752A
- Authority
- KR
- South Korea
- Prior art keywords
- axis direction
- laser beam
- holding
- laser
- moving
- Prior art date
Links
- 238000003754 machining Methods 0.000 title claims abstract description 61
- 230000001678 irradiating effect Effects 0.000 claims abstract description 21
- 238000003384 imaging method Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 description 34
- 239000002390 adhesive tape Substances 0.000 description 7
- 238000001514 detection method Methods 0.000 description 4
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/046—Automatically focusing the laser beam
- B23K26/048—Automatically focusing the laser beam by controlling the distance between laser head and workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2016-011270 | 2016-01-25 | ||
JP2016011270A JP2017135132A (ja) | 2016-01-25 | 2016-01-25 | レーザー加工装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20170088752A true KR20170088752A (ko) | 2017-08-02 |
Family
ID=59431456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020170000699A KR20170088752A (ko) | 2016-01-25 | 2017-01-03 | 레이저 가공 장치 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2017135132A (ja) |
KR (1) | KR20170088752A (ja) |
CN (1) | CN106994556B (ja) |
TW (1) | TW201737327A (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6991668B2 (ja) * | 2018-02-15 | 2022-01-12 | 株式会社ディスコ | 加工装置 |
JP7257604B2 (ja) * | 2018-11-19 | 2023-04-14 | 株式会社東京精密 | レーザ加工装置及びその制御方法 |
JP7292798B2 (ja) * | 2019-06-05 | 2023-06-19 | 株式会社ディスコ | 傾き確認方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06277864A (ja) * | 1993-03-30 | 1994-10-04 | Nikon Corp | レーザ加工装置 |
JP3203507B2 (ja) * | 1998-01-23 | 2001-08-27 | 住友重機械工業株式会社 | レーザ加工装置 |
KR101024266B1 (ko) * | 2006-05-09 | 2011-03-29 | 도쿄엘렉트론가부시키가이샤 | 촬상 위치 보정 방법, 촬상 방법, 기판 촬상 장치 및, 컴퓨터 프로그램이 기록된 기록 매체 |
JP5142916B2 (ja) * | 2008-09-25 | 2013-02-13 | 住友重機械工業株式会社 | レーザ加工方法、及び、レーザ加工装置 |
JP2011151117A (ja) * | 2010-01-20 | 2011-08-04 | Disco Abrasive Syst Ltd | 加工装置 |
JP5686545B2 (ja) * | 2010-07-26 | 2015-03-18 | 株式会社ディスコ | 切削方法 |
JP5641835B2 (ja) * | 2010-09-10 | 2014-12-17 | 株式会社ディスコ | 分割方法 |
JP5829455B2 (ja) * | 2011-08-11 | 2015-12-09 | 株式会社ディスコ | 加工装置 |
KR20130052062A (ko) * | 2011-11-11 | 2013-05-22 | 박금성 | 극초단 펄스 레이저의 단일광자 흡수를 이용한 레이저 가공장치 |
JP6124547B2 (ja) * | 2012-10-16 | 2017-05-10 | 株式会社ディスコ | 加工方法 |
-
2016
- 2016-01-25 JP JP2016011270A patent/JP2017135132A/ja active Pending
- 2016-12-07 TW TW105140458A patent/TW201737327A/zh unknown
-
2017
- 2017-01-03 KR KR1020170000699A patent/KR20170088752A/ko not_active Application Discontinuation
- 2017-01-19 CN CN201710037468.1A patent/CN106994556B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
TW201737327A (zh) | 2017-10-16 |
CN106994556B (zh) | 2020-08-07 |
JP2017135132A (ja) | 2017-08-03 |
CN106994556A (zh) | 2017-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108568593B (zh) | 激光加工装置 | |
TWI658664B (zh) | Laser processing device | |
US9789567B2 (en) | Laser beam spot shape detection method | |
TWI680821B (zh) | 雷射加工裝置 | |
KR102226222B1 (ko) | 레이저 가공 장치 | |
TW201641204A (zh) | 雷射加工裝置 | |
CN109382591B (zh) | 激光加工方法 | |
US20160172182A1 (en) | Laser processing apparatus | |
JP5902490B2 (ja) | レーザー光線のスポット形状検出方法およびスポット形状検出装置 | |
JP2016107330A (ja) | レーザー加工装置およびウエーハの加工方法 | |
KR20170088752A (ko) | 레이저 가공 장치 | |
JP2013237097A (ja) | 改質層形成方法 | |
KR20150146411A (ko) | 레이저 가공 장치 | |
CN106493470B (zh) | 激光加工装置 | |
KR102312237B1 (ko) | 펄스 레이저 광선의 스폿 형상 검출 방법 | |
JP6013894B2 (ja) | レーザー加工装置 | |
JP6441731B2 (ja) | レーザー加工装置 | |
JP2015099026A (ja) | 検出装置 | |
KR20210033888A (ko) | 레이저 가공 방법 및 레이저 가공 장치 | |
JP6721468B2 (ja) | 加工装置 | |
US20210039197A1 (en) | Processing performance confirmation method for laser processing apparatus | |
JP6649705B2 (ja) | レーザー加工方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |