KR20160080945A - Light emitting device package, light emitting device package assembly, light emitting device package module, backlight unit and lighting device - Google Patents

Abstract

The present invention relates to a light emitting device package capable of being used for display or lighting purpose, a light emitting device package assembly, a light emitting device package module, a backlight unit and a lighting device. The light emitting device package comprises: a flip chip shaped light emitting device having a first and a second electrode pad on a lower surface; an upper surface optical conversion body formed on the upper surface of the light emitting device at a thickness having a first optical path length and formed by mixing an optical conversion material in media to a first density; and a side surface optical conversion body formed in a shape surrounding the side surface of the light emitting device on the side surface of the light emitting device at a width having a second optical path length and formed by mixing the optical conversion material in the media to a second density. When cutting the side surface optical conversion body by using a chip scale package (CSP) process, to reduce an effect with respect to a cutting error by extending the second optical path length of the side surface optical conversion body, the width of the side surface optical conversion body is larger than the thickness of the upper surface optical conversion body and the second density of the optical conversion material of the side surface optical conversion body is lower than the first density of the optical conversion material of the upper surface optical conversion body.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package, a light emitting device package combination, a light emitting device package module, a backlight unit package, a light emitting device package, a backlight unit and a lighting device,

The present invention relates to a light emitting device package, a light emitting device package combination, a light emitting device package module, a backlight unit and a lighting device, and more particularly, to a light emitting device package, A light emitting device package module, a backlight unit, and a lighting device.

A light emitting diode (LED) is a kind of semiconductor device that can emit light of various colors by forming a light emitting source through the formation of a PN diode of a compound semiconductor. Such a light emitting device has a long lifetime, can be reduced in size and weight, and can be driven at a low voltage. In addition, these LEDs are resistant to impact and vibration, do not require preheating time and complicated driving, can be mounted on various types of boards or lead frames, and can be packaged so that they can be combined for various purposes to form a backlight unit It can be applied to various lighting devices and the like.

Conventionally, in addition to wafer level packaging (WLP), multilayer ceramic package, multi-chip package, metal package, and COB (Chip on Board), there are next generation light sources that are popularized as high output packages.

This is a chip scale package (CSP), which is small in size compared to existing light emitting device packages and can be formed in a high density, which can lower costs, has advantages of simple process, heat resistance capability and uniformity of color .

Such a chip scale package (CSP) is a technique for forming a light emitting device package in a chip scale unit, in which a large number of light emitting devices are mounted on a substrate strip, a phosphor is applied in a batch, I have.

Therefore, the size of the chip scale package (CSP) is almost the same as or slightly larger than that of the light emitting device. These packages do not require additional submounts or substrates and can be connected directly to the board.

However, since these conventional chip scale packages use a microprocessing process, since the process is performed in a range of several micrometers to several tens of micrometers, a transfer robot for transferring a light emitting element, Due to the limitations of precision, the yield is generally very low and the productivity is also greatly reduced.

For example, if the transfer robot can not align the light emitting element to the correct position, or the cutting device can not accurately cut the light conversion material such as a phosphor formed on the side of the light emitting element, or the application and formation of the light conversion material is not uniform, (color uniformity) is lowered, and various kinds of defective phenomena such as various yellow ring phenomenon, mura phenomenon, whiteness or dark portion may occur.

In addition, in the conventional chip scale packages, the area of the electrode pad of the light emitting device is so narrow that it is difficult to bond the electrode pad to various substrates such as a PCB or a lead frame. Even if bonding is performed, parts are thermally expanded to different thermal expansion coefficients, There is a possibility that a sticking phenomenon, which is damaged or not formed, may occur, resulting in poor durability.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a method of manufacturing a side-view optical converter and a side-view optical converter, To adjust the thickness and width of the upper and lower side light converters so as to reduce the influence of the cutting error by increasing the flatness and color uniformity of the light changing material by controlling the density of the light converting material And it is possible to prevent various defective phenomena such as various yellowing phenomenon, mura phenomenon, occurrence of dark or dark parts, and the like, by using an extension electrode capable of expanding the width of the electrode pad of the light emitting element, And the extension electrode has a buffering action at the time of thermal expansion to prevent the sticking phenomenon, thereby greatly improving the durability. A package, a light emitting device package combination, a light emitting device package module, a backlight unit, and a lighting device. However, these problems are exemplary and do not limit the scope of the present invention.

According to an aspect of the present invention, there is provided a light emitting device package comprising: a light emitting device in the form of a flip chip having a first electrode pad and a second electrode pad on a lower surface; An upper surface optical converter formed on the upper surface of the light emitting device with a thickness having a first optical path length, the photoconversion material being mixed with the medium at a first density; And a side-to-side photo-conversion body formed in a shape surrounding the side face of the light-emitting element and having a width having a second optical path length on a side face of the light-emitting element, the photo-conversion material being mixed with the medium at a second density, A second optical path length of the side light converters is increased when the side light converters are cut using a chip scale package (CSP) process so as to reduce an influence on a cutting error, The width of the sieve may be greater than the thickness of the top surface light converter and the second density of the light conversion material of the side light converter may be less than the first density of the light conversion material of the top surface light converter .

Further, according to the present invention, the medium of the top surface light converter and the side light converter is a light-transmitting resin encapsulant, and the light conversion material may include a fluorescent material or a quantum dot.

In addition, according to the present invention, the upper surface light converter may be installed to extend from the upper surface of the side light converter to the upper surface of the light emitting device so as to be installed above the side light converter.

In addition, according to the present invention, the top surface light converter may be installed to extend from the side surface of the side light converter to the top surface of the light emitting device so as to be installed on the side of the side light converter.

According to another aspect of the present invention, there is provided a liquid crystal display comprising: a first elongated electrode extending from one side of a side of the side light converter to at least a portion of the first electrode pad so as to extend a conductive surface of the first electrode pad; And a second extension electrode extending from the other side of the side surface of the side light converter to at least a portion of the second electrode pad so as to enlarge and extend the conductive surface of the second electrode pad.

According to the present invention, the first elongated electrode and the second elongated electrode may be provided with receiving grooves for receiving at least a part of the first electrode pad and the second electrode pad, respectively.

According to an aspect of the present invention, there is provided a light emitting device package including: a light emitting device in the form of a flip chip having a first electrode pad and a second electrode pad on a lower surface; An upper surface optical converter formed on the upper surface of the light emitting device; A side light converter formed on a side surface of the light emitting device to surround the side surface of the light emitting device; A first extension electrode extending from one side of the side surface of the side light converter to at least a portion of the first electrode pad so as to extend the conductive surface of the first electrode pad; And a second extension electrode extending from the other side of the side surface of the side light converter to at least a portion of the second electrode pad so as to extend the conductive surface of the second electrode pad.

According to another aspect of the present invention, there is provided a light emitting device package comprising: a plurality of light emitting devices in the form of a flip chip having a first electrode pad and a second electrode pad on a lower surface; An upper surface optical converter formed on the upper surface of the light emitting devices; A side light converting element formed on a side surface of the light emitting element in a shape surrounding the side surfaces of the light emitting elements; A first extension electrode extending from one side of the side surface of the side light converter to at least a portion of the first electrode pad so as to extend the conductive surface of the first electrode pad; And a second extension electrode extending from the other side of the side surface of the side light converter to at least a portion of the second electrode pad so as to extend the conductive surface of the second electrode pad, The second extending electrode extends to a first extended electrode of another adjacent light emitting element or to a second extended electrode of another neighboring light emitting element such that the first extended electrode can be connected in series or in parallel with the power supply, To a second extended electrode of another light emitting device or to a first extended electrode of another neighboring light emitting device.

According to an aspect of the present invention, there is provided a light emitting device package module including: a light emitting device in the form of a flip chip having a first electrode pad and a second electrode pad on a lower surface; An upper surface optical converter formed on the upper surface of the light emitting device with a thickness having a first optical path length, the photoconversion material being mixed with the medium at a first density; A side-surface optical conversion element formed in a shape surrounding the side surface of the light-emitting element and having a width having a second optical path length on a side surface of the light-emitting element, the light conversion material being mixed with the medium at a second density; And a module substrate for supporting the plurality of light emitting devices, wherein when the side light converters are cut using a chip scale package (CSP) process, the second light path of the side light converters Wherein the width of the side light converters is greater than the thickness of the top surface light converters so as to increase the length and reduce the effect on the cutting errors, and the second density of the light conversion material of the side light converters is greater than the thickness of the top surface light conversion The first density of the photo-conversion material of the sieve may be lower than the first density of the photo-conversion material of the sieve.

According to an aspect of the present invention, there is provided a backlight unit including: a light emitting device in the form of a flip chip having a first electrode pad and a second electrode pad on a lower surface; An upper surface optical converter formed on the upper surface of the light emitting device with a thickness having a first optical path length, the photoconversion material being mixed with the medium at a first density; And a side-to-side photo-conversion body formed in a shape surrounding the side face of the light-emitting element and having a width having a second optical path length on a side face of the light-emitting element, the photo-conversion material being mixed with the medium at a second density, A second optical path length of the side light converters is increased when the side light converters are cut using a chip scale package (CSP) process so as to reduce an influence on a cutting error, The width of the sieve may be greater than the thickness of the top surface light converter and the second density of the light conversion material of the side light converter may be less than the first density of the light conversion material of the top surface light converter .

According to an aspect of the present invention, there is provided an illumination device including: a light emitting device in the form of a flip chip having a first electrode pad and a second electrode pad on a lower surface; An upper surface optical converter formed on the upper surface of the light emitting device with a thickness having a first optical path length, the photoconversion material being mixed with the medium at a first density; And a side-to-side photo-conversion body formed in a shape surrounding the side face of the light-emitting element and having a width having a second optical path length on a side face of the light-emitting element, the photo-conversion material being mixed with the medium at a second density, A second optical path length of the side light converters is increased when the side light converters are cut using a chip scale package (CSP) process so as to reduce an influence on a cutting error, The width of the sieve may be greater than the thickness of the top surface light converter and the second density of the light conversion material of the side light converter may be less than the first density of the light conversion material of the top surface light converter .

According to some embodiments of the present invention as described above, the density and the color uniformity of the light changing material may be adjusted by controlling the density of the light converting material to control the thickness and the width of the upper surface light converting body and the side light converting body color uniformity can be improved and various defective phenomena such as yellowing phenomenon, mura phenomenon, dulling or darkening can be prevented, the yield and productivity of the product can be greatly improved, and the width of the electrode pad of the light- It is possible to facilitate the mounting of the substrate by using the extension electrode which can be extended and the extension electrode can prevent the sticking phenomenon due to the buffering action at the time of thermal expansion and thus the durability can be greatly improved. Of course, the scope of the present invention is not limited by these effects.

1 is a cross-sectional view illustrating a light emitting device package according to some embodiments of the present invention.
2 is a bottom view showing a bottom surface of the light emitting device package of Fig.
3 is an exploded perspective view of parts of the light emitting device package of FIG.
4 is a cross-sectional view illustrating a light emitting device package according to some other embodiments of the present invention.
5 is a cross-sectional view illustrating a light emitting device package combination according to some embodiments of the present invention.
6 is a bottom view of the light emitting device package combination of FIG.
7 is a bottom view illustrating a light emitting device package combination according to some alternative embodiments of the present invention.
8 is a bottom view illustrating a light emitting device package combination according to some alternative embodiments of the present invention.
9 is a cross-sectional view illustrating a light emitting device package module according to some embodiments of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, It is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

It is to be understood that throughout the specification, when an element such as a film, region or substrate is referred to as being "on", "connected to", "laminated" or "coupled to" another element, It will be appreciated that elements may be directly "on", "connected", "laminated" or "coupled" to another element, or there may be other elements intervening therebetween. On the other hand, when one element is referred to as being "directly on", "directly connected", or "directly coupled" to another element, it is interpreted that there are no other components intervening therebetween do. Like numbers refer to like elements. As used herein, the term "and / or" includes any and all combinations of one or more of the listed items.

Although the terms first, second, etc. are used herein to describe various elements, components, regions, layers and / or portions, these members, components, regions, layers and / It is obvious that no. These terms are only used to distinguish one member, component, region, layer or section from another region, layer or section. Thus, a first member, component, region, layer or section described below may refer to a second member, component, region, layer or section without departing from the teachings of the present invention.

Also, relative terms such as "top" or "above" and "under" or "below" can be used herein to describe the relationship of certain elements to other elements as illustrated in the Figures. Relative terms are intended to include different orientations of the device in addition to those depicted in the Figures. For example, if the element is inverted in the figures, the elements depicted as being on the upper surface of the other elements will have a direction on the lower surface of the other elements. Thus, the example "top" may include both "under" and "top" directions depending on the particular orientation of the figure. If the elements are oriented in different directions (rotated 90 degrees with respect to the other direction), the relative descriptions used herein can be interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a," "an," and "the" include singular forms unless the context clearly dictates otherwise. Also, " comprise "and / or" comprising "when used herein should be interpreted as specifying the presence of stated shapes, numbers, steps, operations, elements, elements, and / And does not preclude the presence or addition of one or more other features, integers, operations, elements, elements, and / or groups.

Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically showing ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention should not be construed as limited to the particular shapes of the regions illustrated herein, but should include, for example, changes in shape resulting from manufacturing.

1 is a cross-sectional view illustrating a light emitting device package 100 according to some embodiments of the present invention. 2 is a bottom view showing a bottom surface of the light emitting device package 100 of FIG. 1, and FIG. 3 is an exploded perspective view of the components of the light emitting device package 100 of FIG.

1 to 3, a light emitting device package 100 according to some embodiments of the present invention includes a light emitting device 10, a top-side light converting body 20, and a side- (30).

For example, the light emitting device 10 may be a light emitting diode (LED) in the form of a flip chip having a first electrode pad P1 and a second electrode pad P2 on a lower surface thereof.

More specifically, for example, as shown in FIGS. 1 to 3, the light emitting device 10 may be a flip chip type having a signal transmission medium such as a pump or a solder in addition to the electrode pads P1 and P2. A horizontal or vertical type light emitting device in which a bonding wire is applied to a terminal or a bonding wire is applied to only a first terminal or a second terminal in part may all be applied.

In addition, the first electrode pad P1 and the second electrode pad P2 may be deformed into various shapes other than the shape shown in FIG. 3. For example, a finger structure having a plurality of fingers on one arm, Structure or the like.

As shown in FIGS. 1 to 3, a plurality of the light emitting devices 10 may be arranged side by side. Alternatively, as shown in FIGS. 5 to 8, Or may be arranged in a matrix.

In addition, although not shown, the light emitting device 10 may be a horizontal or vertical type light emitting device electrically connected to the substrate 10 using a bonding wire.

The light emitting device 10 may be made of a semiconductor, as shown in FIGS. For example, LEDs of blue, green, red, and yellow light emission, LEDs of ultraviolet light emission, and LEDs of infrared light emission, which are made of a nitride semiconductor, can be applied.

The light emitting device 10 may be formed by epitaxially growing nitride semiconductors such as InN, AlN, InGaN, AlGaN, and InGaAlN on a sapphire substrate for growth or a silicon carbide substrate by a vapor phase growth method such as MOCVD To grow. The light emitting element 10 may be formed using a semiconductor such as ZnO, ZnS, ZnSe, SiC, GaP, GaAlAs, or AlInGaP in addition to the nitride semiconductor. These semiconductors can be stacked in the order of an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The light emitting layer (active layer) may be a laminated semiconductor having a multiple quantum well structure or a single quantum well structure or a laminated semiconductor having a double hetero structure. Further, the light emitting element 10 can be selected to have an arbitrary wavelength depending on applications such as display use and illumination use.

Here, as the growth substrate, an insulating, conductive or semiconductor substrate may be used if necessary. For example, the growth substrate may be sapphire, SiC, Si, MgAl ₂ O ₄ , MgO, LiAlO ₂ , LiGaO ₂ , GaN. A GaN substrate, which is a homogeneous substrate, is preferable for epitaxial growth of a GaN material, but a GaN substrate has a problem of high production cost due to its difficulty in manufacturing.

Sapphire and silicon carbide (SiC) substrates are mainly used as the different substrates. Sapphire substrates are more utilized than expensive silicon carbide substrates. When using a heterogeneous substrate, defects such as dislocation are increased due to the difference in lattice constant between the substrate material and the thin film material. Also, due to the difference in the thermal expansion coefficient between the substrate material and the thin film material, warping occurs at a temperature change, and warping causes a crack in the thin film. This problem may be reduced by using a buffer layer between the substrate and the GaN-based light emitting laminate.

In addition, the substrate for growth may be completely or partially removed or patterned in order to improve the optical or electrical characteristics of the LED chip before or after the growth of the LED structure.

For example, in the case of a sapphire substrate, the substrate can be separated by irradiating the laser to the interface with the semiconductor layer through the substrate, and the silicon or silicon carbide substrate can be removed by a method such as polishing / etching.

Another supporting substrate may be used for removing the growth substrate. In order to improve the light efficiency of the LED chip on the opposite side of the growth substrate, the supporting substrate may be bonded using a reflective metal, As shown in FIG.

In addition, patterning of the growth substrate improves the light extraction efficiency by forming irregularities or slopes before or after the LED structure growth on the main surface (front surface or both sides) or side surfaces of the substrate. The size of the pattern can be selected from the range of 5 nm to 500 μm and it is possible to make a structure for improving the light extraction efficiency with a rule or an irregular pattern. Various shapes such as a shape, a column, a mountain, a hemisphere, and a polygon can be adopted.

In the case of the sapphire substrate, the crystals having a hexagonal-rhombo-cubic (Hexa-Rhombo R3c) symmetry have lattice constants of 13.001 and 4.758 in the c-axis direction and the a-axis direction, respectively, and have C plane, A plane and R plane. In this case, the C-plane is relatively easy to grow the nitride film, and is stable at high temperature, and thus is mainly used as a substrate for nitride growth.

Another material of the growth substrate is a Si substrate, which is more suitable for large-scale curing and relatively low in cost, so that mass productivity can be improved.

Since the external quantum efficiency of the light emitting device is lowered by absorbing light generated from the GaN-based semiconductor, the Si (silicon) substrate may be removed, if necessary, and Si, Ge, SiAl, Or a support substrate such as a metal substrate is further formed and used.

When a GaN thin film is grown on a different substrate such as the Si substrate, the dislocation density increases due to the lattice constant mismatch between the substrate material and the thin film material, and cracks and warpage Lt; / RTI > The buffer layer may be disposed between the growth substrate and the light emitting stack for the purpose of preventing dislocation and cracking of the light emitting stack. The buffer layer also functions to reduce the scattering of the wavelength of the wafer by adjusting the degree of warping of the substrate during the growth of the active layer.

The buffer layer may be made of GaN, AlN, AlGaN, InGaN, or InGaNAlN. If necessary, a material such as ZrB ₂ , HfB ₂ , ZrN, HfN, or TiN may be used. Further, a plurality of layers may be combined, or the composition may be gradually changed.

1 to 3, the upper surface light converter 20 is formed on the upper surface of the light emitting element 10 to have a thickness T1 having a first light path length, and the medium M1 ) In which the photo-conversion material (C1) is mixed at the first density.

Here, the light conversion sheet may be formed in a sheet shape before the chip scale package process, or may be formed in a hard or soft plate shape having various thicknesses of uniform thickness.

More specifically, for example, the top surface light converter 20 may be a mixed sheet structure of silicon and a fluorescent material or a quantum dot, which includes an adhesive layer or an adhesive component and can be spontaneously cured or thermally cured.

For example, as shown in FIG. 1, the first density is an average inter-particle distance between the photo-conversion materials (C1) such as phosphor particles and quantum dot particles dispersed in the medium (M1) such as silicon d1).

Here, the medium M1 is not limited to silicon, but may be glass, acrylic, epoxy resin, EMC, epoxy resin composition, silicone resin composition, modified epoxy resin composition, modified silicone resin composition, polyimide resin composition, A variety of light transmitting resin materials such as polyamide resin, mid resin composition, polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin and PBT resin can be applied.

Such a phosphor may have the following composition formula and color.

Oxide system: yellow and green Y ₃ Al ₅ O ₁₂ : Ce, Tb ₃ Al ₅ O ₁₂ : Ce, Lu ₃ Al ₅ O ₁₂ : Ce

(Ba, Sr) ₂ SiO ₄ : Eu, yellow and orange (Ba, Sr) ₃ SiO ₅ : Ce

The nitride-based: the green β-SiAlON: Eu, yellow _{L 3 Si 6 O 11: Ce} , orange-colored α-SiAlON: Eu, red _{CaAlSiN 3: Eu, Sr 2 Si} 5 N 8: Eu, SrSiAl 4 N 7: Eu

The composition of the phosphor should basically correspond to stoichiometry, and each element may be substituted with another element in each group on the periodic table. For example, Sr can be substituted with Ba, Ca, Mg, etc. of the alkaline earth (II) group, and Y can be replaced with lanthanum series of Tb, Lu, Sc, Gd and the like. Ce, Tb, Pr, Er, Yb and the like, and the active agent may be used alone or as a negative active agent for the characteristic modification.

The quantum dots QD may be composed of a core (3 to 10 nm) such as CdSe and InP, a shell (0.5 to 2 nm) such as ZnS and ZnSe, and a ligand for stabilizing the core and the shell , And various colors can be implemented depending on the size.

Further, the phosphor and the quantum dot may be mixed with each other.

1 to 3, the side light converter 30 has a side surface of the light emitting device 10 and a side surface of the light emitting device 10, And a light-converting material C2 is mixed with the second density in the medium M2, or a printing material.

Here, the molding member refers to various molding members such as an injection-molded member or an insert-molded member which is filled in a molten state in a cavity inside the mold, and then cured, and the printing substance is a screen print, a squeeze print, And a printing material which is printed by various printing methods such as printing.

More specifically, for example, the side light converter 30 may be a mixed molding or printing structure of silicon and phosphors or quantum dots including an adhesive layer or adhesive component, which may be spontaneously cured or thermally cured.

For example, as shown in FIG. 1, the second density refers to the average density of the particles (C2) between the photoconversion material (C2) such as phosphor particles and quantum dot particles dispersed in the medium (M2) such as silicon or epoxy Can be changed according to the distance d2.

Here, the medium M2 is not limited to silicon or epoxy but may be an epoxy resin composition, a silicone resin composition, a modified epoxy resin composition, a modified silicone resin composition, a polyimide resin composition, Various light transmitting resin materials such as modified polyimide resin composition, polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin and PBT resin have.

Meanwhile, the medium M1 and M2 of the upper surface light converter 20 and the side light converter 30 are light-transmissive resin encapsulants, and the light conversion materials C1 and C2 are phosphors or quantum dots And the medium M1 of the upper surface light converter 20 and the medium M2 of the side light converter 30 may have the same or different materials.

The material of the light conversion material C1 of the upper surface light converter 20 and the material of the light conversion material C2 of the side light converter 30 may be the same or different.

1, when the side light converter 30 is cut by using a chip scale package (CSP) process, the second light path of the side light converter 30 The width T2 of the side light converters 30 is greater than the thickness T1 of the top surface light converters 20 so as to reduce the influence on the cutting errors by increasing the length of the side light converters 30, The second density of the photoconversion material (C2) of the top surface photoconversion material (20) may be less than the first density of the photoconversion material (C1) of the top surface photoconversion material (20).

1, in order that the width T2 of the side light converter 30 is larger than the thickness T1 of the top light converter 20, Wherein the average inter-particle distance d1 between the photo-conversion materials C2 of the top-surface light converter 30 is relatively less than the average inter-particle distance d2 between the photo- Can be greatly increased.

Therefore, even when the width T2 of the side light converter 30 is larger than the thickness T1 of the top light converter 20, the amount of light between the light conversion materials C2 of the side light converter 30 Since the average inter-particle distance d1 is relatively larger than the average inter-particle distance d2 between the photo-conversion materials C1 of the top surface light converter 20, (L2) passing through the side-to-side light converter (20) is greater than the probability that the upward light (L1) traveling through the side light converter (20) 0.0 > C2) < / RTI > can be the same.

More specifically, for example, in FIG. 1, in order to make the width T2 of the side light converter 30 to be two to ten times larger than the thickness T1 of the top surface light converter 20, The second density of the photoconversion element 30 can be 1/2 times lower to 1/10 times lower than the first density of the upper surface light converter 20.

For example, when the cutting error of the cutting device is 50 micrometers and the normal width T2 of the side light converter 30 is 100 micrometers, in the past, the error influence due to the cutting error of the cutting device 50 percent.

However, in the case of the present invention, for example, even if the cutting error of the cutting device is equal to 50 micrometers, the second density of the side light converter 30 is lowered so that the normal width T2 becomes 200 micrometers , The error influence due to the cutting error of the cutting device can be reduced to 25%.

Therefore, as described above, the upper surface light converters 20 and the side light converters 30 are manufactured separately, and when the side light converters 30 are cut, Since the overall length is increased even if there is an equal cutting error by increasing the width, the influence due to the error can be reduced, so that the flatness and color uniformity of the light changing material can be improved and various yellowing phenomena, It is possible to prevent various defective phenomena such as occurrence of a dark portion or a dark portion.

1 to 3, a light emitting device package 100 according to some embodiments of the present invention includes a first electrode pad P1, a second electrode pad P1, A first elongated electrode E1 extending from one side of the light converting body 30 to at least a part of the first electrode pad P1 and a second elongated electrode E1 extending from the conductive surface of the second electrode pad P2 And a second elongated electrode E2 extending from the other surface of the side light converter 30 to at least a portion of the second electrode pad P2.

1 to 3, the first extension electrode E1 and the second extension electrode E2 are connected to the first electrode pad P1 and the second electrode pad P2, respectively, (H2) for accommodating at least a part of the receiving recesses (H2).

The first elongated electrode E1 and the second elongated electrode E2 may be formed by applying a conductive paste including a silver component to the first electrodes E1 and the second electrodes E2 using a silk screen printing method or a squeeze printing method. May be formed on the pad (P1) and the second electrode pad (P2).

The first elongated electrode E1 and the second elongated electrode E2 may extend to the first electrode pad and the second electrode pad of other neighboring light emitting devices so as to form a light emitting device package combination It is also possible to serve as a wiring layer.

However, the method of forming the first elongated electrode E1 and the second elongated electrode E2 is not limited to the silk screen printing method or the squeeze printing method described above, and may be formed by a variety of methods such as plating and bonding, .

The width of the first electrode pad P1 and the second electrode pad P2 of the light emitting element 10 may be increased by using the first extended electrode E1 and the second extended electrode E2, The first elongated electrode E1 and the second elongated electrode E2, which are enlarged in a large area, can be easily mounted on a PCB substrate, a lead frame, or an external substrate.

In addition, the first elongated electrode E1 and the second elongated electrode E2 are made of a conductive plastic material having a relatively soft material, and can prevent a sticking phenomenon due to buffering action during thermal expansion between the parts. , Whereby the durability can be greatly improved.

1, the upper surface light converter 20 is disposed on the upper surface 30a of the side light converter 30 so as to be disposed above the side light converter 30, 10 to the upper surface 10a.

In this case, the amount of the upward light L1 described above can be emitted in a larger amount or a wider area than the amount of the lateral light L2.

4 is a cross-sectional view illustrating a light emitting device package 200 according to some embodiments of the present invention.

4, the top surface light converter 20 of the light emitting device package 200 according to some other embodiments of the present invention may be mounted on the side surface of the side light converter body 30, May extend from a side surface 30b of the light emitting device 30 to an upper surface 10a of the light emitting device 10.

In this case, the amount of the above-mentioned lateral light L2 can be emitted in a larger amount or a wider area than the amount of the upward light L1.

The shape and position of the upper surface light converter 20 and the side surface light converter 20 are changed so that the amount or area of the light L2 in the lateral direction and the amount of the upward light L1 The area can be controlled and designed to be optimized in consideration of the installation environment and the light distribution curve. Therefore, it is possible to actively cope with various environments by using not only the thickness and width of the upper surface light converter 20 and the side light converter 20, but also the shape and position thereof.

1, a backlight unit 1000 according to some embodiments of the present invention includes a flip chip (not shown) having a first electrode pad P1 and a second electrode pad P2 on a lower surface thereof, ) And a light-transmissive material (C1) is formed on the upper surface of the light-emitting element (10) with a thickness (T1) having a first optical path length and the medium (M1) And a second light path length T2 formed on a side surface of the light emitting device 10 so as to surround the side surface of the light emitting device 10, And a side light converting body 30 in which the light converting material C2 is mixed at a second density and the side light converting element 30 is cut using a chip scale package (CSP) The width T2 of the side light converters 30 is set to be larger than the width of the side light converters 30 so that the length of the second light path of the side light converters 30 can be increased to reduce the influence on the cutting errors. And the second density of the photo-conversion material (C2) of the side light converter (30) is greater than the thickness (T1) of the top surface light converter (20) May be lower than the first density of material (C1).

Here, the light emitting device 10, the top surface light converting device 20, and the side light converting device 30 are formed of the components of the light emitting device package 100 according to some embodiments of the present invention described above Its role and configuration may be the same. Therefore, detailed description is omitted.

Further, although not shown, the backlight unit 1000 according to some embodiments of the present invention may further include various optical members such as a light guide plate.

Here, the light guide plate may be an optical member that can be made of a light-transmitting material to guide light generated from the light emitting device 10.

The light guide plate may be installed in a path of light generated by the light emitting device 10 to transmit light generated by the light emitting device 10 over a wider area.

The light guide plate may be made of polycarbonate, polysulfone, polyacrylate, polystyrene, polyvinyl chloride, polyvinyl alcohol, polynorbornene, polyester, or the like. A translucent resin-based material can be applied. Further, the light guide plate may be formed by various methods such as forming fine patterns, fine protrusions, diffusion films, or the like on the surface, or forming fine bubbles therein.

Although not shown, various diffusion sheets, prism sheets, filters, and the like may be additionally provided above the light guide plate. In addition, various display panels such as an LCD panel may be installed above the light guide plate.

Although not shown, the present invention may include a lighting device or a display device including the light emitting device package 100 described above. Here, the components of the illumination device or the display device according to some embodiments of the present invention may have the same configuration and function as those of the above-described light emitting device package of the present invention. Therefore, detailed description is omitted.

FIG. 5 is a cross-sectional view illustrating a light emitting device package combination 2000 according to some embodiments of the present invention, and FIG. 6 is a bottom view of the light emitting device package combination 2000 of FIG.

5 and 6, a light emitting device package combination 2000 according to some embodiments of the present invention includes a flip chip having a first electrode pad P1 and a second electrode pad P2 on a lower surface thereof, a plurality of light emitting devices 10 arranged in a lateral direction in the form of flip chips, a top surface light converter 20 formed on the top surface of the light emitting devices 10, A side light converter (30) formed on a side surface of the light emitting device (10) in a shape surrounding the side surface of the light emitting device (10) The first electrode pad (E1) extends from one side of the lower surface of the first electrode pad (30) to at least a portion of the first electrode pad (P1) At least a part of the second electrode pad (P2) on the other side of the light converting body (30) And the second elongated electrode E2 is connected to another adjacent light emitting element 10 so that the light emitting elements 10 can be connected in series with the power source S. [ To the second elongated electrode E2 of the adjacent elongated light emitting element 10 and the first elongated electrode E1 extends to the other elongated electrode E1 of the adjacent light emitting element 10 To the first extended electrode E1 of the second elongated electrode E2 or another neighboring elec- tronic element 10. [

Here, the light emitting device 10, the top surface light converting device 20, and the side light converting device 30 are formed of the components of the light emitting device package 100 according to some embodiments of the present invention described above Its role and configuration may be the same. Therefore, detailed description is omitted.

Therefore, the plurality of light emitting devices 10 arranged in the horizontal direction are connected in series with the power source S due to the first elongated electrodes E1 and the second elongated electrodes E2 connected in series to each other. So that the light emitting device package combination 2000 can be formed as a whole.

Therefore, it can be freely designed and applied in various sizes, various specifications, and various forms, for example, in a wide variety of combinations or illumination or display devices.

7 is a bottom view illustrating a light emitting device package combination 3000 according to some alternative embodiments of the present invention.

7, a light emitting device package combination 3000 according to some embodiments of the present invention includes a flip chip (not shown) having a first electrode pad P1 and a second electrode pad P2 on a lower surface thereof, A plurality of light emitting devices 10 arranged in a longitudinal direction, a top surface light converter 20 formed on the top surface of the light emitting devices 10, (30) formed on a side surface of the light emitting device (10) in a shape of a side surface of the light emitting device (10) A first elongated electrode E1 extending from one side of the lower surface to at least a portion of the first electrode pad P1 and a second elongated electrode E1 extending from the side surface of the second electrode pad P2 to extend the conductive surface of the second electrode pad P2, (30) to at least a part of the second electrode pad (P2) And the second elongated electrode E2 includes a second elongated electrode E2 connected to the adjacent elongated light emitting element 10 so that the light emitting elements 10 can be connected in parallel with the power source S. [ To the first extended electrode E1 of the adjacent light emitting element 10 or to the second extended electrode E2 of another adjacent light emitting element 10, To the second elongated electrode E2 or to the first elongated electrode E1 of another neighboring luminous means 10.

Here, the light emitting device 10, the top surface light converting device 20, and the side light converting device 30 are formed of the components of the light emitting device package 100 according to some embodiments of the present invention described above Its role and configuration may be the same. Therefore, detailed description is omitted.

Accordingly, the plurality of light emitting devices 10 arranged in the longitudinal direction are connected in parallel to the power source S by the first elongated electrodes E1 and the second elongated electrodes E2 connected in parallel to each other. So that the light emitting device package combination 3000 can be formed as a whole.

Therefore, it can be freely designed and applied in various sizes, various specifications, and various forms, for example, in a wide variety of combinations or illumination or display devices.

8 is a bottom view illustrating a light emitting device package combination 4000 according to some alternative embodiments of the present invention.

8, a light emitting device package combination 4000 according to some other embodiments of the present invention includes a flip chip (flip chip) having a first electrode pad P1 and a second electrode pad P2 on a lower surface thereof, a plurality of light emitting devices 10 arranged in a matrix in a horizontal direction and a vertical direction, a top surface light converter 20 formed on an upper surface of the light emitting devices 10, A side light converter (30) formed on a side surface of the light emitting device (10) in a shape surrounding the side surface of the light emitting device (10) The first electrode pad (E1) extends from one side of the lower surface of the first electrode pad (30) to at least a portion of the first electrode pad (P1) The second electrode pad P2 is formed on the other side of the light converting element 30, The second elongated electrode E2 includes a second elongated electrode E2 extended to a portion of the first elongated electrode E2 so that groups of the light emitting devices 10 connected in parallel with the power source S can be connected in series. Extends to a first elongated electrode E1 of another neighboring light emitting element 10 or to a second elongated electrode E2 of another neighboring light emitting element 10 and the first elongated electrode E1 extends to a neighboring To the second elongated electrode E2 of another light emitting element 10 or to the first elongated electrode E1 of another neighboring light emitting element 10.

Here, the light emitting device 10, the top surface light converting device 20, and the side light converting device 30 are formed of the components of the light emitting device package 100 according to some embodiments of the present invention described above Its role and configuration may be the same. Therefore, detailed description is omitted.

Accordingly, the plurality of light emitting devices 10 arranged in the matrix in the lateral direction and the longitudinal direction are connected in series by the first elongated electrodes E1 and the second elongated electrodes E2 connected in series, And may be connected in series and in parallel with the power source S to form a light emitting device package combination 4000 as a whole.

Therefore, it can be freely designed and applied in various sizes, various specifications, and various forms, for example, in a wide variety of combinations or illumination or display devices.

For example, according to the technical idea of the present invention, a plurality of the light emitting devices 10 may be connected in series and / or in parallel using the first elongated electrodes E1 and the second elongated electrodes E2, Various types of large display or illumination devices can be realized in a remarkably simple and inexpensive way.

9 is a cross-sectional view illustrating a light emitting device package module 5000 according to some embodiments of the present invention.

9, a light emitting device package module 5000 according to some embodiments of the present invention includes a plurality of light emitting device packages 100 of FIG. 1 according to some embodiments of the present invention. 110). ≪ / RTI >

Here, the module substrate 110 may be made of a material having a suitable mechanical strength and insulation and a conductive material capable of supporting or accommodating the light emitting device 10.

For example, the module substrate 110 may be formed of a metal material such as aluminum, copper, zinc, tin, lead, gold, or silver, and may be in the form of a lead frame, .

In order to maximize the reflectance, at least a silver (Ag) plating layer, a silver (Ag) alloy, a silver (Ag) alloy layer, an aluminum (Al) (Al) alloy layer, a copper (Cu) alloy, a copper (Cu) alloy layer, a copper (Cu) alloy layer, a platinum (Pt) alloy, a platinum (Au), gold (Au) plated layer, gold (Au) alloy layer, palladium (Pd), ruthenium (Ru), rhodium (Rh) and combinations thereof.

In addition, a printed circuit board (PCB) in which an epoxy resin sheet is formed in multiple layers in place of the lead frame may be applied to the module substrate 110. In addition, the module substrate 110 may be a flexible printed circuit board (FPCB) made of a flexible material.

In place of the module substrate 110, a synthetic resin substrate such as resin or glass epoxy or a ceramic substrate may be used in consideration of thermal conductivity.

In order to improve workability, the module substrate 110 may be formed of at least one selected from EMC (Epoxy Mold Compound), PI (polyimide), ceramic, graphene, glass synthetic fiber and combinations thereof at least partially . ≪ / RTI > The other components may be the same as those of the above-described embodiments of the present invention, and a detailed description thereof will be omitted.

Accordingly, the light emitting devices 10 may be mounted on the module substrate 110 in a desired shape and applied to various lighting or display devices.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

10: Light emitting element
P1: first electrode pad
P2: second electrode pad
20: Top surface light converter
T1: Thickness
T2: Width
M1, M2: medium
C1, C2: photo-conversion material
30: side light converter
d1, d2: intergranular distance
10a, 30a: upper surface
E1: first extended electrode
E2: second extended electrode
H1, H2: receptacle groove
S: Power
100: Light emitting device package
110: module substrate
1000: Backlight unit
2000, 3000, 4000: Light emitting device package combination
5000: Light emitting device package module

Claims (11)

A flip chip type light emitting device having a first electrode pad and a second electrode pad on a bottom surface thereof;
An upper surface optical converter formed on the upper surface of the light emitting device with a thickness having a first optical path length, the photoconversion material being mixed with the medium at a first density; And
And a side light conversion element formed in a shape surrounding the side of the light emitting element and having a width having a second optical path length on a side surface of the light emitting element and the light conversion material is mixed with the medium at a second density,
A second optical path length of the side light converters is increased when the side light converters are cut using a chip scale package (CSP) process so as to reduce an influence on a cutting error, Wherein the width of the sieve is greater than the thickness of the top surface light converter and the second density of the light conversion material of the side light converter is less than the first density of the light conversion material of the top surface light converter. A light emitting device package. The method according to claim 1,
Wherein the medium of the top surface light converter and the side light converter is a light-transmissive resin encapsulant, and the light conversion material comprises a fluorescent material or a quantum dot. The method according to claim 1,
Wherein the upper surface light converter is installed to extend from an upper surface of the side light converter to an upper surface of the light emitting device so as to be installed above the side light converter. The method according to claim 1,
Wherein the upper surface light converter is installed so as to extend from a side surface of the side light converter to an upper surface of the light emitting device so as to be installed on a side of the side light converter. The method according to claim 1,
A first extension electrode extending from one side of the side surface of the side light converter to at least a portion of the first electrode pad so as to extend the conductive surface of the first electrode pad; And
A second extension electrode extending from the other side of the side surface of the side light converter to at least a portion of the second electrode pad so as to extend the conductive surface of the second electrode pad;
Emitting device package. 6. The method of claim 5,
Wherein the first elongated electrode and the second elongated electrode are provided with receiving grooves for receiving at least a part of the first electrode pad and the second electrode pad, respectively. A flip chip type light emitting device having a first electrode pad and a second electrode pad on a bottom surface thereof;
An upper surface optical converter formed on the upper surface of the light emitting device;
A side light converter formed on a side surface of the light emitting device to surround the side surface of the light emitting device;
A first extension electrode extending from one side of the side surface of the side light converter to at least a portion of the first electrode pad so as to extend the conductive surface of the first electrode pad; And
A second extension electrode extending from the other side of the side surface of the side light converter to at least a portion of the second electrode pad so as to extend the conductive surface of the second electrode pad;
Emitting device package. A plurality of light emitting elements in the form of flip chips having a first electrode pad and a second electrode pad on the bottom surface;
An upper surface optical converter formed on the upper surface of the light emitting devices;
A side light converting element formed on a side surface of the light emitting element in a shape surrounding the side surfaces of the light emitting elements;
A first extension electrode extending from one side of the side surface of the side light converter to at least a portion of the first electrode pad so as to extend the conductive surface of the first electrode pad; And
And a second extension electrode extending from the other side of the side surface of the side light converter to at least a portion of the second electrode pad so as to extend the conductive surface of the second electrode pad,
In order for the light emitting devices to be connected in series or in parallel with the power source,
The second extending electrode extends to a first extended electrode of another adjacent light emitting element or a second extended electrode of another adjacent light emitting element,
Wherein the first extension electrode extends to a second extension electrode of another adjacent light emitting element or to a first extension electrode of another neighboring light emitting element. A flip chip type light emitting device having a first electrode pad and a second electrode pad on a bottom surface thereof;
An upper surface optical converter formed on the upper surface of the light emitting device with a thickness having a first optical path length, the photoconversion material being mixed with the medium at a first density;
A side-surface optical conversion element formed in a shape surrounding the side surface of the light-emitting element and having a width having a second optical path length on a side surface of the light-emitting element, and a light conversion material is mixed with the medium at a second density; And
And a module substrate for supporting the plurality of light emitting elements,
A second optical path length of the side light converters is increased when the side light converters are cut using a chip scale package (CSP) process so as to reduce an influence on a cutting error, Wherein the width of the sieve is greater than the thickness of the top surface light converter and the second density of the light conversion material of the side light converter is less than the first density of the light conversion material of the top surface light converter. Light emitting device package module. A flip chip type light emitting device having a first electrode pad and a second electrode pad on a bottom surface thereof;
An upper surface optical converter formed on the upper surface of the light emitting device with a thickness having a first optical path length, the photoconversion material being mixed with the medium at a first density; And
And a side light conversion element formed in a shape surrounding the side of the light emitting element and having a width having a second optical path length on a side surface of the light emitting element and the light conversion material is mixed with the medium at a second density,
A second optical path length of the side light converters is increased when the side light converters are cut using a chip scale package (CSP) process so as to reduce an influence on a cutting error, Wherein the width of the sieve is greater than the thickness of the top surface light converter and the second density of the light conversion material of the side light converter is less than the first density of the light conversion material of the top surface light converter. Backlight unit. A flip chip type light emitting device having a first electrode pad and a second electrode pad on a bottom surface thereof;
An upper surface optical converter formed on the upper surface of the light emitting device with a thickness having a first optical path length, the photoconversion material being mixed with the medium at a first density; And
And a side light conversion element formed in a shape surrounding the side of the light emitting element and having a width having a second optical path length on a side surface of the light emitting element and the light conversion material is mixed with the medium at a second density,
A second optical path length of the side light converters is increased when the side light converters are cut using a chip scale package (CSP) process so as to reduce an influence on a cutting error, Wherein the width of the sieve is greater than the thickness of the top surface light converter and the second density of the light conversion material of the side light converter is less than the first density of the light conversion material of the top surface light converter. Lighting device.

Images