KR101504139B1 - Manufacturing method of light emitting device package - Google Patents

Abstract

The present invention relates to a method for manufacturing a light emitting element package that can be used for displaying or lighting. The method for manufacturing a light emitting element package comprises: a light emitting element device preparing step of preparing a light emitting element device in which light emitting elements are aligned on an alignment substrate; a first optical transducer device preparing step of preparing a first optical transducer device in which a first optical transducer is formed on a base sheet; an assembly step of assembling the first optical transducer device with the light emitting element device to bond the light emitting elements of the light emitting element device to the first optical transducer of the first optical transducer device; an alignment substrate removing step of removing the alignment substrate from the light emitting element device by using an external heating device; and a second optical transducer forming step of forming a second optical transducer inside the first optical transducer device to form the second optical transducer on the side surface of the light emitting element in a shape surrounding the side surface of the light emitting element.

Description

[0001] The present invention relates to a manufacturing method of a light emitting device package,

The present invention relates to a method of manufacturing a light emitting device package, and more particularly, to a method of manufacturing a light emitting device package that can be used for display or illumination.

A light emitting diode (LED) is a kind of semiconductor device that can emit light of various colors by forming a light emitting source through the formation of a PN diode of a compound semiconductor. Such a light emitting device has a long lifetime, can be reduced in size and weight, and can be driven at a low voltage. In addition, these LEDs are resistant to shock and vibration, do not require preheating time and complicated driving, can be packaged after being mounted on a substrate or lead frame in various forms, so that they can be modularized for various purposes and used as a backlight unit A lighting device, and the like.

Conventionally, in addition to wafer level packaging (WLP), multilayer ceramic package, multi-chip package, metal package, and COB (Chip on Board), there are next generation light sources that are popularized as high output packages.

This is a chip scale package (CSP), which is small in size compared to existing light emitting device packages and can be formed in a high density, which can lower costs, has advantages of simple process, heat resistance capability and uniformity of color .

Such a chip scale package (CSP) is a technique for forming a light emitting device package in a chip scale unit, in which a large number of light emitting devices are mounted on a substrate strip, a phosphor is applied in a batch, I have.

Therefore, the size of the chip scale package (CSP) is almost the same as or slightly larger than that of the light emitting device. These packages do not require additional submounts or substrates and can be connected directly to the board.

However, since these conventional chip scale packages use a microprocessing process, since the process is performed in a range of several micrometers to several tens of micrometers, a transfer robot for transferring a light emitting element, Due to the limitations of precision, the yield is generally very low and the productivity is also greatly reduced.

For example, if the transfer robot can not align the light emitting element to the correct position, or the cutting device can not accurately cut the light conversion material such as a phosphor formed on the side of the light emitting element, or the application and formation of the light conversion material is not uniform, (color uniformity) is lowered, and various kinds of defective phenomena such as various yellow ring phenomenon, mura phenomenon, whiteness or dark portion may occur.

In addition, in the conventional chip scale packages, the area of the electrode pad of the light emitting device is so narrow that it is difficult to bond the electrode pad to various substrates such as a PCB or a lead frame. Even if bonding is performed, parts are thermally expanded to different thermal expansion coefficients, There is a possibility that a sticking phenomenon, which is damaged or not formed, may occur, resulting in poor durability.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a method of manufacturing a side-view optical converter and a side-view optical converter, To adjust the thickness and width of the upper and lower side light converters so as to reduce the influence of the cutting error by increasing the flatness and color uniformity of the light changing material by controlling the density of the light converting material And it is possible to prevent various defective phenomena such as various yellowing phenomenon, mura phenomenon, occurrence of dark or dark parts, and the like, by using an extension electrode capable of expanding the width of the electrode pad of the light emitting element, And the extension electrode has a buffering action at the time of thermal expansion to prevent the sticking phenomenon, thereby greatly improving the durability. And a method for manufacturing a package. However, these problems are exemplary and do not limit the scope of the present invention.

According to an aspect of the present invention, there is provided a method of manufacturing a light emitting device package, the method comprising: preparing a light emitting device having a light emitting device arrayed on an alignment substrate; Preparing a first photoconversion device device for preparing a first photoconversion device in a state in which a first photoconversion device is formed on a base sheet; Assembling the first light converter device to the light emitting device device such that the light emitting devices of the light emitting device device can be bonded to the first light converter material of the first light converter device; An alignment substrate removing step of removing the alignment substrate from the light emitting device using an external heating device; And forming a second light conversion element inside the first light conversion element so that the second light conversion element is formed on a side surface of the light emitting element so as to surround the side surface of the light emitting element; . ≪ / RTI >

According to another aspect of the present invention, there is provided a method of manufacturing a light emitting device, comprising the steps of: preparing an alignment substrate on which alignment pads are formed at a bottom alignment position; Applying a bonding medium to the alignment pad; Attaching a first electrode pad and a second electrode pad of the light emitting device in a flip chip form to the bonding medium; And melting the bonding medium to such an extent that the light emitting device does not fall using the external heating device so that the first electrode pad and the second electrode pad of the light emitting device are self aligned on the alignment position line of the alignment pad Self-aligning step.

Further, according to the present invention, the first light converter device preparation step may include: a base sheet preparation step of preparing the base sheet; And a first light converter forming step of forming the first light converter on the base sheet.

Further, according to the present invention, the first light converter device preparation step may further include: a dam film formation step of forming a dam film on the base sheet after the base sheet preparation step.

According to the present invention, it is preferable that the first light converter is formed with a thickness having a first light path length, the light conversion material is mixed with the first density at a first density, Wherein the first light conversion material is formed in a width having a length of 2 optical path lengths and the light conversion material is mixed in a second density in a medium and the second light conversion material is formed by using a chip scale package (CSP) The width of the second light converter is larger than the thickness of the first light converter so that the length of the second light guide of the second light converter is increased to reduce the influence on the cutting error when the light converter is cut , The second density of the light conversion material of the second light conversion material may be lower than the first density of the light conversion material of the first light conversion material.

Further, according to the present invention, in the second light conversion element formation step, the second light conversion element may be molded into the first light conversion element device.

According to another aspect of the present invention, there is provided a method of manufacturing a light emitting device, comprising the steps of: forming a first light conversion element on the first light conversion element, And forming an extended electrode and a second elongated electrode on the bottom surface, respectively.

According to the present invention, in the extending electrode forming step, the first extending electrode and the second extending electrode may be formed by printing a conductive paste by a silk screen method.

In addition, according to the present invention, the second extension electrode may be connected to the first extension electrode of another adjacent light emitting element or the second extension electrode of another neighboring light emitting element so that the light emitting elements may be connected in series or in parallel with the power supply The first extended electrode may be formed by printing a conductive paste in a silk screen manner so as to extend to a second extended electrode of another adjacent light emitting element or a first extended electrode of another neighboring light emitting element .

According to another aspect of the present invention, there is provided a light emitting device, comprising: a light emitting device;

According to some embodiments of the present invention as described above, the density and the color uniformity of the light changing material may be adjusted by controlling the density of the light converting material to control the thickness and the width of the upper surface light converting body and the side light converting body color uniformity can be improved and various defective phenomena such as yellowing phenomenon, mura phenomenon, dulling or darkening can be prevented, the yield and productivity of the product can be greatly improved, and the width of the electrode pad of the light- It is possible to facilitate the mounting of the substrate by using the extension electrode which can be extended and the extension electrode can prevent the sticking phenomenon due to the buffering action at the time of thermal expansion and thus the durability can be greatly improved. Of course, the scope of the present invention is not limited by these effects.

1 is a flowchart illustrating a method of manufacturing a light emitting device package according to some embodiments of the present invention.
FIGS. 2 to 13 are cross-sectional views showing steps of the method of manufacturing the light emitting device package of FIG.
14 is a bottom view of the light emitting device package of FIG. 1. FIG. 14 is a cross-sectional view showing an example of a light emitting device package manufactured according to the manufacturing method.
15 is a bottom view of the light emitting device package of Fig.
16 is a cross-sectional view illustrating an example of a light emitting device package combination manufactured according to a method of manufacturing a light emitting device package according to some other embodiments of the present invention.
17 is a cross-sectional view illustrating an example of a light emitting device package module manufactured according to a method of manufacturing a light emitting device package according to some other embodiments of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, The present invention is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

It is to be understood that throughout the specification, when an element such as a film, region or substrate is referred to as being "on", "connected to", "laminated" or "coupled to" another element, It will be appreciated that elements may be directly "on", "connected", "laminated" or "coupled" to another element, or there may be other elements intervening therebetween. On the other hand, when one element is referred to as being "directly on", "directly connected", or "directly coupled" to another element, it is interpreted that there are no other components intervening therebetween do. Like numbers refer to like elements. As used herein, the term "and / or" includes any and all combinations of one or more of the listed items.

Although the terms first, second, etc. are used herein to describe various elements, components, regions, layers and / or portions, these members, components, regions, layers and / It is obvious that no. These terms are only used to distinguish one member, component, region, layer or section from another region, layer or section. Thus, a first member, component, region, layer or section described below may refer to a second member, component, region, layer or section without departing from the teachings of the present invention.

Also, relative terms such as "top" or "above" and "under" or "below" can be used herein to describe the relationship of certain elements to other elements as illustrated in the Figures. Relative terms are intended to include different orientations of the device in addition to those depicted in the Figures. For example, if the element is inverted in the figures, the elements depicted as being on the upper surface of the other elements will have a direction on the lower surface of the other elements. Thus, the example "top" may include both "under" and "top" directions depending on the particular orientation of the figure. If the elements are oriented in different directions (rotated 90 degrees with respect to the other direction), the relative descriptions used herein can be interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a," "an," and "the" include singular forms unless the context clearly dictates otherwise. Also, " comprise "and / or" comprising "when used herein should be interpreted as specifying the presence of stated shapes, numbers, steps, operations, elements, elements, and / And does not preclude the presence or addition of one or more other features, integers, operations, elements, elements, and / or groups.

Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically showing ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention should not be construed as limited to the particular shapes of the regions shown herein, but should include, for example, changes in shape resulting from manufacturing.

FIG. 14 is a cross-sectional view showing an example of a light emitting device package 100 manufactured according to a manufacturing method of the light emitting device package 100 of FIG. 1, and FIG. 15 is a bottom view of the light emitting device package of FIG.

14 and 15, a light emitting device package 100 manufactured according to a method of manufacturing a light emitting device package of the present invention includes a light emitting device 10, a first light converting body 20, And a second light converter 30.

For example, the light emitting device 10 may be a light emitting diode (LED) in the form of a flip chip having a first electrode pad P1 and a second electrode pad P2 on a lower surface thereof.

14 and 15, the light emitting device 10 may be a flip chip type having a signal transmission medium such as a pump or a solder in addition to the electrode pads P1 and P2. A horizontal or vertical type light emitting device in which a bonding wire is applied to a terminal or a bonding wire is applied to only a first terminal or a second terminal in part may all be applied.

In addition, the first electrode pad P1 and the second electrode pad P2 may be deformed into various shapes other than the shapes shown in FIGS. 14 and 15, for example, a finger having a plurality of fingers on one arm Structure or bump structure.

As shown in FIG. 15, a plurality of the light emitting devices 10 may be arranged in a matrix, or may be connected in series or in parallel in a horizontal or vertical direction, though not shown.

In addition, although not shown, the light emitting device 10 may be a horizontal or vertical type light emitting device electrically connected to the substrate 10 using a bonding wire.

As shown in FIGS. 14 and 15, the light emitting device 10 may be formed of a semiconductor. For example, LEDs of blue, green, red, and yellow light emission, LEDs of ultraviolet light emission, and LEDs of infrared light emission, which are made of a nitride semiconductor, can be applied.

The light emitting device 10 can be formed by epitaxially growing nitride semiconductors such as InN, AlN, InGaN, AlGaN, and InGaAlN on a sapphire substrate for growth or a silicon carbide substrate by a vapor phase growth method such as MOCVD To grow. The light emitting element 10 may be formed using a semiconductor such as ZnO, ZnS, ZnSe, SiC, GaP, GaAlAs, or AlInGaP in addition to the nitride semiconductor. These semiconductors can be stacked in the order of an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The light emitting layer (active layer) may be a laminated semiconductor having a multiple quantum well structure or a single quantum well structure or a laminated semiconductor having a double hetero structure. Further, the light emitting element 10 can be selected to have an arbitrary wavelength depending on applications such as display use and illumination use.

14 and 15, the first light conversion element 20 is formed on the upper surface of the light emitting element 10 to have a thickness T1 having a first light path length, Lt; RTI ID = 0.0 > M1, < / RTI >

Here, the light conversion sheet may be formed in a sheet shape before the chip scale package process, or may be formed in a hard or soft plate shape having various thicknesses of uniform thickness.

More specifically, for example, the first light converter 20 may be a mixed sheet structure of silicon and a fluorescent material or a quantum dot, which includes an adhesive layer or an adhesive component and can be spontaneously cured or thermally cured.

For example, as shown in FIGS. 14 and 15, the first density refers to the average density (average density) between the photo-conversion materials C1 such as phosphor particles or quantum dot particles dispersed in the medium M1 such as silicon Can be changed according to the inter-distance distance d1.

Here, the medium M1 is not limited to silicon, but may be glass, acrylic, epoxy resin, EMC, epoxy resin composition, silicone resin composition, modified epoxy resin composition, modified silicone resin composition, polyimide resin composition, A variety of light transmitting resin materials such as polyamide resin, mid resin composition, polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin and PBT resin can be applied.

Such a phosphor may have the following composition formula and color.

Oxide system: yellow and green Y ₃ Al ₅ O ₁₂ : Ce, Tb ₃ Al ₅ O ₁₂ : Ce, Lu ₃ Al ₅ O ₁₂ : Ce

(Ba, Sr) ₂ SiO ₄ : Eu, yellow and orange (Ba, Sr) ₃ SiO ₅ : Ce

The nitride-based: the green β-SiAlON: Eu, yellow _{L 3 Si 6 O 11: Ce} , orange-colored α-SiAlON: Eu, red _{CaAlSiN 3: Eu, Sr 2 Si} 5 N 8: Eu, SrSiAl 4 N 7: Eu

The composition of the phosphor should basically correspond to stoichiometry, and each element may be substituted with another element in each group on the periodic table. For example, Sr can be substituted with Ba, Ca, Mg, etc. of the alkaline earth (II) group, and Y can be replaced with lanthanum series of Tb, Lu, Sc, Gd and the like. Ce, Tb, Pr, Er, Yb and the like, and the active agent may be used alone or as a negative active agent for the characteristic modification.

The quantum dots QD may be composed of a core (3 to 10 nm) such as CdSe and InP, a shell (0.5 to 2 nm) such as ZnS and ZnSe, and a ligand for stabilizing the core and the shell , And various colors can be implemented depending on the size.

Further, the phosphor and the quantum dot may be mixed with each other.

14 and 15, the second light converter 30 has a shape that surrounds a side surface of the light emitting device 10, and a second light pipe 30 is provided on a side surface of the light emitting device 10, May be a molding member or a printing material formed with a width T2 having a length and a light conversion material C2 mixed with the medium M2 at a second density.

Here, the molding member refers to various molding members such as an injection-molded member or an insert-molded member which is filled in a molten state in a cavity inside the mold, and then cured, and the printing substance is a screen print, a squeeze print, And a printing material which is printed by various printing methods such as printing.

More specifically, for example, the second light converter 30 may be a mixed molding or printing structure of silicon and phosphors or quantum dots including an adhesive layer or adhesive component, which may be spontaneously cured or thermally cured.

For example, as shown in FIG. 1, the second density refers to the average density of the particles (C2) between the photoconversion material (C2) such as phosphor particles and quantum dot particles dispersed in the medium (M2) such as silicon or epoxy Can be changed according to the distance d2.

Here, the medium M2 is not limited to silicon or epoxy but may be an epoxy resin composition, a silicone resin composition, a modified epoxy resin composition, a modified silicone resin composition, a polyimide resin composition, Various light transmitting resin materials such as modified polyimide resin composition, polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin and PBT resin have.

Meanwhile, the media M1 and M2 of the first and second light converters 20 and 30 are light-transmitting resin encapsulants, and the photo-conversion materials C1 and C2 are phosphors or And the medium M1 of the first light converter 20 and the medium M2 of the second light converter 30 may be the same or different from each other have.

The material of the light conversion material C1 of the first light conversion material 20 and the material of the light conversion material C2 of the second light conversion material 30 may be the same or different from each other .

Further, when the second light converter 30 is cut by using a chip scale package (CSP) process, the length of the second light guide of the second light converter 30 is increased, The width T2 of the second light converter 30 is larger than the thickness T1 of the first light converter 20 so that the influence of the light of the second light converter 30 can be reduced. The second density of conversion material (C2) may be lower than the first density of the photo-conversion material (C1) of the first light conversion material (20).

Therefore, for example, as shown in FIG. 14, in order that the width T2 of the second light converter 30 is larger than the thickness T1 of the first light converter 20, The average inter-particle distance d1 between the photo-conversion materials C2 of the conversion body 30 is a distance between the photo-conversion materials C1 of the first light converter 20 ). ≪ / RTI >

Therefore, even if the width T2 of the second light converter 30 is larger than the thickness T1 of the first light converter 20, the light conversion material C2 of the second light converter 30 (D1) between the photo-conversion materials (C1) of the first photo-conversion material (20) is relatively larger than the average inter-particle distance (d2) (L2) passing through the side-to-side light converters (20) is higher than the probability that the upward light (L1) passing through the side light converters (20) The probability of being phototransformed by encountering the photo-conversion material (C2) may be the same.

More specifically, for example, in FIG. 14, in order to make the width T2 of the second light converter 30 to be two to ten times larger than the thickness T1 of the first light converter 20, The second density of the second light converters 30 can be 1/2 times lower to 1/10 times lower than the first density of the first light converters 20.

For example, when the cutting error of the cutting device is 50 micrometers and the normal width T2 of the second light converter 30 is 100 micrometers, conventionally, the error influence due to the cutting error of the cutting device Can be 50 percent.

However, in the case of the present invention, for example, even if the cutting error of the cutting device is equal to 50 micrometers, the second density of the second light converters 30 is lowered so that the normal width T2 becomes 200 micro- Meter, the error influence due to the cutting error of the cutting device can be reduced to 25%.

Therefore, as described above, the first light conversion body 20 and the second light conversion body 30 are manufactured separately, and when the second light conversion body 30 is cut, Since the overall length is increased even if there is an equal cutting error by increasing the width of the light emitting layer 30, it is possible to reduce the influence of the error, thereby improving the flatness and color uniformity of the light changing material, It is possible to prevent various defective phenomena such as occurrence of inhomogeneous phenomenon, dents or dark portions.

14, the light emitting device package 100 according to some embodiments of the present invention includes a first electrode pad P1 and a second electrode pad P1, A first elongated electrode E1 extending from one side of the lower surface of the body 30 to at least a portion of the first electrode pad P1 and a second elongated electrode E1 extending from the lower surface of the body 30 to extend the conductive surface of the second electrode pad P2 And a second elongated electrode E2 extending from the other side of the second light converter 30 to at least a portion of the second electrode pad P2.

The first elongated electrode E1 and the second elongated electrode E2 may be formed by applying a conductive paste including a silver component to the first electrodes E1 and the second electrodes E2 using a silk screen printing method or a squeeze printing method. May be formed on the pad (P1) and the second electrode pad (P2).

The first elongated electrode E1 and the second elongated electrode E2 may extend to the first electrode pad and the second electrode pad of other neighboring light emitting devices so as to form a light emitting device package combination It is also possible to serve as a wiring layer.

However, the method of forming the first elongated electrode E1 and the second elongated electrode E2 is not limited to the silk screen printing method or the squeeze printing method described above, but may be formed by a variety of methods such as plating and bonding. .

The width of the first electrode pad P1 and the second electrode pad P2 of the light emitting element 10 may be increased by using the first extended electrode E1 and the second extended electrode E2, The first elongated electrode E1 and the second elongated electrode E2, which are enlarged in a large area, can be easily mounted on a PCB substrate, a lead frame, or an external substrate.

In addition, the first elongated electrode E1 and the second elongated electrode E2 are made of a conductive plastic material having a relatively soft material, and can prevent a sticking phenomenon due to buffering action during thermal expansion between the parts. , Whereby the durability can be greatly improved.

1 is a flowchart illustrating a method of manufacturing a light emitting device package 100 according to some embodiments of the present invention. 2 to 13 are cross-sectional views showing steps of the method of manufacturing the light emitting device package 100 of FIG.

1 to 13, a method of manufacturing a light emitting device package 100 according to some embodiments of the present invention is a method of manufacturing a light emitting device package 100, in which light emitting devices 10 are aligned on a substrate 1 for alignment, A light emitting element device preparation step S1 of preparing the apparatus 1000 and a first light preparing step of preparing a first light converter body 2000 in which the first light converter body 20 is formed on the base sheet 4, (200) so that the light emitting devices (10) of the light emitting device device (1000) can be bonded to the first light converting device (20) of the first light converting device (S3) of assembling the first light converter device (2000) to the light emitting device device (1000), and a step (S3) of assembling the light emitting device device (S4) for removing the light emitting element (10) from the light emitting element (10) (S5) for forming the second light converter (30) inside the first light converter device (2000) so that the second light converter (30) is formed on the first light converter device The first electrode pad (P1) and the second electrode pad (P2) of the element 10 are connected to each other by a first extended electrode (not shown) on the lower surface of the second light converter 30 so as to extend the conductive surface of the first electrode pad P1 and the second electrode pad P2, (S6) forming a second elongated electrode (E1) and a second elongated electrode (E2), and a cutting step (S6) for cutting and singulating individual units including at least one light emitting element (S7).

More specifically, for example, as shown in FIG. 1, in the light emitting element device preparing step S1, an alignment substrate 1 on which alignment pads 2 are formed is arranged at the alignment position of the lower surface 1a (S12) for applying a bonding medium (B) to the alignment pad (2); and a step (S12) of applying a bonding medium A light emitting element attaching step S13 of attaching the first electrode pad P1 and the second electrode pad P2 of the light emitting element 10 and the light emitting element 10 using the external heating apparatus 3 The first and second electrode pads P1 and P2 of the light emitting element 10 are melted on the alignment position line of the alignment pad 2 by self- (Step S14).

More specifically, for example, as shown in FIG. 1, the first photo-conversion device preparation step S2 includes a base sheet preparing step S21 for preparing the base sheet 4, A dam film forming step S22 for forming a dam film 5 on the base sheet 4 after the preparing step S21 and a forming step S22 for forming the first light converting body 20 on the base sheet 4 And a first photo-conversion body formation step (S23).

FIGS. 2 to 13 are cross-sectional views showing steps of the method of manufacturing the light emitting device package 100 of FIG.

2 to 13, the manufacturing method of the light emitting device package 100 of FIG. 1 will be described in more detail. The light emitting devices 10 are aligned on the substrate 1 for alignment shown in FIG. 2, an alignment substrate 1 having an alignment pad 2, which is a metal component, is provided at the alignment position of the lower surface 1a, as shown in FIG. 2, in order to prepare the light- can do.

At this time, the alignment substrate 1 is formed with the alignment pads 2 of the metal component at the same size and position as those of various PCB substrates, lead frames, and various external substrates to which the light emitting devices 10 are to be mounted It may be a kind of a simulated substrate which can be recycled.

However, the alignment substrate 1 is not limited to this, and various substrates of various types such as wafers for various light emitting devices, sapphire substrates, silicon substrates, and metal substrates can be applied.

In addition, the alignment pad 2 may be made of a metal having high affinity with the bonding medium B shown in FIG. For example, it may be a pad of various metals such as copper, aluminum, iron, gold, or silver, which has high affinity with the bonding medium (B) including lead.

The alignment pad 2 serves as a reference for alignment and can be formed on the bottom surface of the alignment substrate 1 by using a very accurate semiconductor process, a printing process, or a PCB process.

Then, as shown in FIG. 3, the bonding medium (B) may be applied to the alignment pad (2).

At this time, a flux may be applied to the alignment pad 2 in advance, and the bonding medium B may be coated with a lead having a high affinity with the alignment pad 2, tin, zinc, , Aluminum, gold, silver, platinum, and the like.

Also, as shown in FIG. 3, the bonding medium B may be applied to the lower surface of the alignment pad 2. However, the application surface of the bonding medium B is not limited to that shown in FIG. 3. It is also possible to apply the bonding medium B to the upper surface of the alignment pad 2 and use the bonding medium B in an inverted manner.

In addition, the bonding medium B may be applied to the alignment pad 2 in a variety of ways, such as dispensing, dipping, and printing a solder or solder paste.

4, a first electrode pad P1 and a second electrode pad P2 of the light emitting element 10, which are flip chip type, are attached to the bonding medium B, The light emitting device 10 may be mounted on the alignment substrate 1 so as to hang upside down.

In this case, the bonding medium B is in a state before being cured, and the first and second electrode pads P1 and P2 of the light emitting device 10 are electrically connected to each other by the adhesive force and the surface tension of the bonding medium B, P2 may be attached to the alignment substrate 1 by a relatively intermediate bonding force.

5, the bonding medium B is melted to such an extent that the light emitting device 10 is not dropped using the external heating device 3, The electrode pad P1 and the second electrode pad P2 can be aligned on the alignment position line of the alignment pad 2 by itself.

Here, the adhesive force and the surface tension of the bonding medium B are further weakened and the first electrode pad P1 and the second electrode pad P2 of the light emitting element 10 are relatively backwardly moved to the alignment substrate 1 Its position can be fluidly attached by a slight binding force.

5, when the gravity applied to the light emitting element 10 is weakened, the light emitting element 10 moves in the gravity direction as if it is a gravity weight, Can be accurately aligned by themselves using the bonding force between the metals on the direct lower line of the substrate. In order to induce the self-aligning action, the melt density, melting temperature, melting time, material, and capacity of the bonding medium (B) may be optimized.

On the other hand, in order to prepare the first light converter body 2000 in which the first light converter body 20 is formed on the base sheet 4 shown in Fig. 8, first, as shown in Fig. 6, The base sheet 4 can be prepared.

Here, the base sheet 4 may be a blue tape, various molds, plates, various PCB substrates or sapphire substrates, a lead frame or various external substrates, or a structure having the same specifications.

However, the base sheet 4 is not limited to this, and various types of substrates such as wafers for various light emitting devices, sapphire substrates, silicon substrates, and metal substrates can be applied.

Next, as shown in Fig. 7, a dam film 5 may be formed to guide the rim of the base sheet 4 or a necessary portion thereof so that the material of the first light converter 20 will not overflow .

The dam film 5 may be provided on the base sheet 4 in a wide variety of materials and forms such as various laminating films, adhesive films, molds, coating layers, and protective layers.

Next, as shown in FIG. 8, the first light converter 20 may be formed on the base sheet 4.

At this time, the first light converter 20 may be manufactured in a sheet form and preliminarily formed in a sheet shape to be adhered to the upper surface of the base sheet 4, and may be formed into a rigid or soft And may be formed in a plate shape and adhered to the base sheet 4 or may be dispensed or applied.

9, the light emitting devices 10 of the light emitting device 1000 may be bonded to the first light converting member 20 of the first light converting device 2000. Next, as shown in FIG. 9, The first light converter device 2000 may be assembled to the light emitting device 1000.

10, the alignment substrate 1 may be removed from the light emitting device 1000 by using the external heating device 3. As shown in FIG.

At this time, the bonding medium B is melted by using the external heating device 3 so as to be separated from the alignment substrate 1 and the alignment pad 2 by the first electrode pads of the light emitting element 10 The light emitting device 10 is adhered to and fixed to the first light converter 20 and only the alignment substrate 1 can be removed.

11, a second light conversion element 30 is formed on a side surface of the light emitting element 10 so as to surround the side surface of the light emitting element 10, The second light converters 30 may be formed in the second substrate 2000.

In this case, the second photo-conversion device 30 is molded or printed in the first photo-conversion device 2000, wherein the molding is a process of filling the cavity inside the mold in a molten state The injection molding member or the insert molding member to be cured after the molding, and the printing molding is a printing material which is printed by various printing methods such as screen printing, squeeze printing and inkjet printing.

More specifically, for example, the second light converter 30 may be a mixed molding or printing structure of silicon and phosphors or quantum dots including an adhesive layer or adhesive component, which may be spontaneously cured or thermally cured.

14, the first light converter 20 described above is formed with a thickness T1 having a first light path length, and a light conversion material C1 is formed on the medium M1 Wherein the second light converter (30) is formed with a width (T2) having a second optical path length and the light conversion material (C2) is added to the medium (M2) at a second density And the second light converter 30 may be formed in the second light converter 30 when the second light converter 30 is cut using a chip scale package (CSP) The width T2 of the second light converter 30 is larger than the thickness T1 of the first light converter 20 so that the second light path length of the first light converter 20 may be increased to reduce the influence on the cutting error , The second density of the light conversion material (C2) of the second light conversion material (30) may be lower than the first density of the light conversion material (C1) of the first light conversion material have.

13, in order to enlarge and extend the conductive surfaces of the first electrode pad P1 and the second electrode pad P2 of the light emitting element 10, The first elongated electrode E1 and the second elongated electrode E2 can be formed on the lower surface of the first elongated electrode 30, respectively.

At this time, the first extended electrode E1 and the second extended electrode E2 may be formed by printing a conductive paste by a silk screen method.

Here, the second elongated electrode E2 may be connected to the first elongated electrode E1 of the neighboring other light emitting device 10 or another adjacent elec- trode E1 of the adjacent light emitting device 10 so that the light emitting devices 10 may be connected in series or in parallel with the power source. And the first elongated electrode E1 is connected to the second elongated electrode E2 of another adjacent light emitting element 10 or another neighboring elec- trode element 10 of the adjacent light emitting element 10. [ And may be formed by printing a conductive paste by a silk screen method so as to extend to the first extended electrode E1.

Next, as shown in FIG. 13, the light emitting device 10 may be cut into individual units or combination units including at least one light emitting device 10 along the cutting line CL.

16 is a cross-sectional view illustrating an example of a light emitting device package combination 4000 manufactured according to a method of manufacturing a light emitting device package according to some other embodiments of the present invention.

16, a light emitting device package combination 4000 according to some other embodiments of the present invention includes a flip chip flip chip having a first electrode pad P1 and a second electrode pad P2 on a lower surface thereof, a plurality of light emitting devices 10 arranged in a matrix in a horizontal direction and a vertical direction, a first light converter 20 formed on an upper surface of the light emitting devices 10, A second light converter 30 formed on a side surface of the light emitting device 10 to surround the side surface of the first electrode pad P1, A first elongated electrode E1 extending from a lower surface of the transducer 30 to at least a portion of the first electrode pad P1 and a second elongated electrode E1 extending from the lower surface of the transducer 30 to extend the conductive surface of the second electrode pad P2 , The second electrode pad (P2) is formed on the other surface of the second light converter (30) The second elongated electrode E2 includes a second elongated electrode E2 extended to a portion of the first elongated electrode E2 so that groups of the light emitting devices 10 connected in parallel with the power source S can be connected in series. Extends to a first elongated electrode E1 of another neighboring light emitting element 10 or to a second elongated electrode E2 of another neighboring light emitting element 10 and the first elongated electrode E1 extends to a neighboring To the second elongated electrode E2 of another light emitting element 10 or to the first elongated electrode E1 of another neighboring light emitting element 10.

Here, the light emitting device 10, the first light converter 20, and the side light converter 30 may include the components of the light emitting device package 100 according to some embodiments of the present invention described above And its role and configuration may be the same. Therefore, detailed description is omitted.

Accordingly, the plurality of light emitting devices 10 arranged in the matrix in the lateral direction and the longitudinal direction are connected in series by the first elongated electrodes E1 and the second elongated electrodes E2 connected in series, And may be connected in series and in parallel with the power source S to form a light emitting device package combination 4000 as a whole.

Therefore, it can be freely designed and applied in various sizes, various specifications, and various forms, for example, in a wide variety of combinations or illumination or display devices.

For example, according to the technical idea of the present invention, a plurality of the light emitting devices 10 may be connected in series and / or in parallel using the first elongated electrodes E1 and the second elongated electrodes E2, Various types of large display or illumination devices can be realized in a remarkably simple and inexpensive way.

17 is a cross-sectional view illustrating an example of a light emitting device package module 5000 manufactured according to a method of manufacturing a light emitting device package according to some other embodiments of the present invention.

17, a light emitting device package module 5000 according to some embodiments of the present invention includes a plurality of light emitting device packages 100 according to some embodiments of the present invention. It may be a seated configuration.

Here, the module substrate 110 may be made of a material having a suitable mechanical strength and insulation and a conductive material capable of supporting or accommodating the light emitting device 10.

For example, the module substrate 110 may be formed of a metal material such as aluminum, copper, zinc, tin, lead, gold, or silver, and may be in the form of a lead frame, .

In order to maximize the reflectance, at least a silver (Ag) plating layer, a silver (Ag) alloy, a silver (Ag) alloy layer, an aluminum (Al) (Al) alloy layer, a copper (Cu) alloy, a copper (Cu) alloy layer, a copper (Cu) alloy layer, a platinum (Pt) alloy, a platinum (Au), gold (Au) plated layer, gold (Au) alloy layer, palladium (Pd), ruthenium (Ru), rhodium (Rh) and combinations thereof.

In addition, a printed circuit board (PCB) in which an epoxy resin sheet is formed in multiple layers in place of the lead frame may be applied to the module substrate 110. In addition, the module substrate 110 may be a flexible printed circuit board (FPCB) made of a flexible material.

In place of the module substrate 110, a synthetic resin substrate such as resin or glass epoxy or a ceramic substrate may be used in consideration of thermal conductivity.

In order to improve workability, the module substrate 110 may be formed of at least one selected from EMC (Epoxy Mold Compound), PI (polyimide), ceramic, graphene, glass synthetic fiber and combinations thereof at least partially . ≪ / RTI > The other components may be the same as those of the above-described embodiments of the present invention, and a detailed description thereof will be omitted.

Accordingly, the light emitting devices 10 may be mounted on the module substrate 110 in a desired shape and applied to various lighting or display devices.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

1: substrate for alignment
1000: Light emitting device
2000: first photo-conversion device
2: alignment pad
3: External heating device
1a: when
B: bonding medium
4: Base sheet
5: Dam film
CL: Cutting line
10: Light emitting element
P1: first electrode pad
P2: second electrode pad
20: Top surface light converter
T1: Thickness
T2: Width
M1, M2: medium
C1, C2: photo-conversion material
30: side light converter
d1, d2: intergranular distance
10a, 30a: upper surface
E1: first extended electrode
E2: second extended electrode
H1, H2: receptacle groove
S: Power
100: Light emitting device package
110: module substrate
4000: Light emitting device package combination
5000: Light emitting device package module

Claims (10)

A light emitting device device preparation step of preparing a light emitting device device in which light emitting devices are aligned on an alignment substrate;
Preparing a first photoconversion device device for preparing a first photoconversion device in a state in which a first photoconversion device is formed on a base sheet;
Assembling the first light converter device to the light emitting device device such that the light emitting devices of the light emitting device device can be bonded to the first light converter material of the first light converter device;
An alignment substrate removing step of removing the alignment substrate from the light emitting device using an external heating device; And
Forming a second light conversion element inside the first light conversion element so that the second light conversion element is formed on a side surface of the light emitting element so as to surround the side surface of the light emitting element;
Emitting device package. The method according to claim 1,
The light emitting device device preparation step may include:
Preparing an alignment substrate on which an alignment pad is formed at an alignment position of a lower surface;
Applying a bonding medium to the alignment pad;
Attaching a first electrode pad and a second electrode pad of the light emitting device in a flip chip form to the bonding medium; And
Wherein the bonding medium is melted to such an extent that the light emitting device is not dropped using the external heating device so that the first electrode pad and the second electrode pad of the light emitting device are aligned on the alignment position line of the alignment pad, Alignment step;
Emitting device package. The method according to claim 1,
Wherein the first light converter device preparation step comprises:
A base sheet preparing step of preparing the base sheet; And
A first photoconversion element forming step of forming the first photoconversion element on the base sheet;
Emitting device package. The method of claim 3,
Wherein the first light converter device preparation step comprises:
A dam film forming step of forming a dam film on the base sheet after the base sheet preparing step;
Emitting device package. The method according to claim 1,
Wherein the first light converter is formed with a thickness having a first light path length and the light conversion material is mixed with the first density at a medium,
Wherein the second light converter is formed with a width having a second optical path length, wherein the light conversion material is mixed in the medium at a second density,
The second light converter may be configured to increase the length of the second light path of the second light converter when cutting the second light converter by using a chip scale package (CSP) process, The width of the second light converter is greater than the thickness of the first light converter and the second density of the light conversion material of the second light converter is less than the thickness of the first light converter, Wherein the first density of the light conversion material is lower than the first density of the light conversion material. The method according to claim 1,
In the second light conversion element formation step,
And the second light conversion body is molded and molded inside the first light conversion body device. The method according to claim 1,
The method of claim 1 or 2, further comprising: forming a first light conversion element on the lower surface of the second light conversion element so that the conductive surface of the first electrode pad and the second electrode pad of the light emitting element can be enlarged and extended, And forming a second elongated electrode;
Emitting device package. 8. The method of claim 7,
Wherein the first elongated electrode and the second elongated electrode are formed by printing a conductive paste in a silk screen manner in the elongated electrode forming step. 8. The method of claim 7,
In order for the light emitting devices to be connected in series or in parallel with the power source,
The second extending electrode extends to a first extended electrode of another adjacent light emitting element or a second extended electrode of another adjacent light emitting element,
Wherein the first extending electrode is formed by printing a conductive paste in a silk screen manner so as to extend to a second extended electrode of another adjacent light emitting device or a first extended electrode of another adjacent light emitting device, ≪ / RTI > The method according to claim 1,
A cutting step of cutting and singulating individual units including at least one or more of the light emitting elements along a cutting line;
Emitting device package.

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