KR20160041053A - 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들 - Google Patents

웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들 Download PDF

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Publication number
KR20160041053A
KR20160041053A KR1020167008061A KR20167008061A KR20160041053A KR 20160041053 A KR20160041053 A KR 20160041053A KR 1020167008061 A KR1020167008061 A KR 1020167008061A KR 20167008061 A KR20167008061 A KR 20167008061A KR 20160041053 A KR20160041053 A KR 20160041053A
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South Korea
Prior art keywords
wafer
measurements
wafers
patterning
sampling
Prior art date
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Ceased
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KR1020167008061A
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English (en)
Korean (ko)
Inventor
파벨 이직슨
존 로빈슨
마이크 아델
아미르 위드만
동섭 최
아나트 마르첼리
Original Assignee
케이엘에이-텐코어 코오포레이션
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Publication of KR20160041053A publication Critical patent/KR20160041053A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H01L21/027—
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B21/00—Systems involving sampling of the variable controlled
    • G05B21/02—Systems involving sampling of the variable controlled electric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H01L22/10—
    • H01L22/20—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing And Monitoring For Control Systems (AREA)
  • General Factory Administration (AREA)
  • Manufacturing & Machinery (AREA)
KR1020167008061A 2007-04-23 2008-04-23 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들 Ceased KR20160041053A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US91343507P 2007-04-23 2007-04-23
US60/913,435 2007-04-23
US12/107,346 2008-04-22
US12/107,346 US8175831B2 (en) 2007-04-23 2008-04-22 Methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers
PCT/US2008/061299 WO2008131422A1 (en) 2007-04-23 2008-04-23 Methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020147035320A Division KR101608479B1 (ko) 2007-04-23 2008-04-23 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들

Publications (1)

Publication Number Publication Date
KR20160041053A true KR20160041053A (ko) 2016-04-15

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KR1020167008061A Ceased KR20160041053A (ko) 2007-04-23 2008-04-23 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들
KR1020147010643A Active KR101531974B1 (ko) 2007-04-23 2008-04-23 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들
KR1020147010642A Active KR101531992B1 (ko) 2007-04-23 2008-04-23 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들
KR1020097024367A Active KR101448970B1 (ko) 2007-04-23 2008-04-23 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들
KR1020147035320A Active KR101608479B1 (ko) 2007-04-23 2008-04-23 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들

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KR1020147010643A Active KR101531974B1 (ko) 2007-04-23 2008-04-23 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들
KR1020147010642A Active KR101531992B1 (ko) 2007-04-23 2008-04-23 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들
KR1020097024367A Active KR101448970B1 (ko) 2007-04-23 2008-04-23 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들
KR1020147035320A Active KR101608479B1 (ko) 2007-04-23 2008-04-23 웨이퍼들 상에서 측정들이 수행되는 프로세스에 대한 동적 샘플링 방식을 형성 또는 수행하기 위한 방법들 및 시스템들

Country Status (4)

Country Link
US (3) US8175831B2 (https=)
JP (3) JP5425760B2 (https=)
KR (5) KR20160041053A (https=)
WO (1) WO2008131422A1 (https=)

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US20170255188A1 (en) 2017-09-07
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US20080286885A1 (en) 2008-11-20
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US8175831B2 (en) 2012-05-08
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