KR20160031510A - 전자 장치용 전극 표면 변성 층 - Google Patents

전자 장치용 전극 표면 변성 층 Download PDF

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Publication number
KR20160031510A
KR20160031510A KR1020167003360A KR20167003360A KR20160031510A KR 20160031510 A KR20160031510 A KR 20160031510A KR 1020167003360 A KR1020167003360 A KR 1020167003360A KR 20167003360 A KR20167003360 A KR 20167003360A KR 20160031510 A KR20160031510 A KR 20160031510A
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KR
South Korea
Prior art keywords
group
electrode
carbon atoms
layer
tfd
Prior art date
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Withdrawn
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KR1020167003360A
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English (en)
Korean (ko)
Inventor
크리스토퍼 뉴섬
Original Assignee
캠브리지 디스플레이 테크놀로지 리미티드
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Application filed by 캠브리지 디스플레이 테크놀로지 리미티드 filed Critical 캠브리지 디스플레이 테크놀로지 리미티드
Publication of KR20160031510A publication Critical patent/KR20160031510A/ko
Withdrawn legal-status Critical Current

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    • H01L51/105—
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/12—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains three hetero rings
    • C07D495/14—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/22—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains four or more hetero rings
    • H01L51/0074—
    • H01L51/0541—
    • H01L51/0545—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H01L2031/0344—
    • H01L2251/10—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
KR1020167003360A 2013-07-15 2014-07-11 전자 장치용 전극 표면 변성 층 Withdrawn KR20160031510A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1312609.9 2013-07-15
GBGB1312609.9A GB201312609D0 (en) 2013-07-15 2013-07-15 Method
PCT/GB2014/000283 WO2015008015A1 (en) 2013-07-15 2014-07-11 Electrode surface modification layer for electronic devices

Publications (1)

Publication Number Publication Date
KR20160031510A true KR20160031510A (ko) 2016-03-22

Family

ID=49081267

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167003360A Withdrawn KR20160031510A (ko) 2013-07-15 2014-07-11 전자 장치용 전극 표면 변성 층

Country Status (8)

Country Link
US (1) US9793504B2 (cg-RX-API-DMAC10.html)
JP (1) JP6356240B2 (cg-RX-API-DMAC10.html)
KR (1) KR20160031510A (cg-RX-API-DMAC10.html)
CN (1) CN105378960B (cg-RX-API-DMAC10.html)
DE (1) DE112014003272T5 (cg-RX-API-DMAC10.html)
GB (2) GB201312609D0 (cg-RX-API-DMAC10.html)
TW (1) TW201517339A (cg-RX-API-DMAC10.html)
WO (1) WO2015008015A1 (cg-RX-API-DMAC10.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150099801A (ko) * 2012-12-18 2015-09-01 메르크 파텐트 게엠베하 축합 고리계를 갖는 방출체
JP7387685B2 (ja) * 2021-09-17 2023-11-28 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、プログラム、および基板処理装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7045285B1 (en) * 1996-11-05 2006-05-16 Clinical Micro Sensors, Inc. Electronic transfer moieties attached to peptide nucleic acids
US6501217B2 (en) * 1998-02-02 2002-12-31 International Business Machines Corporation Anode modification for organic light emitting diodes
JP4364586B2 (ja) * 2003-08-27 2009-11-18 Ｔｄｋ株式会社 有機電界効果トランジスタ及びその製造方法
US7642038B2 (en) * 2004-03-24 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Method for forming pattern, thin film transistor, display device, method for manufacturing thereof, and television apparatus
US8187746B2 (en) * 2008-05-16 2012-05-29 Uchicago Argonne, Llc Surface modification agents for lithium batteries
KR20100091663A (ko) * 2009-02-11 2010-08-19 삼성전자주식회사 표면개질제, 이를 사용하여 제조된 적층 구조, 그 구조의 제조방법 및 이를 포함하는 트랜지스터
US8637857B2 (en) * 2010-04-06 2014-01-28 Basf Se Substituted carbazole derivatives and use thereof in organic electronics
GB201013820D0 (en) * 2010-08-18 2010-09-29 Cambridge Display Tech Ltd Low contact resistance organic thin film transistors
GB201021277D0 (en) * 2010-12-15 2011-01-26 Cambridge Display Tech Ltd Semiconductor blend
US9315724B2 (en) * 2011-06-14 2016-04-19 Basf Se Metal complexes comprising azabenzimidazole carbene ligands and the use thereof in OLEDs
US20140319428A1 (en) * 2011-07-27 2014-10-30 Merck Patent Gmbh Small molecules and their use as organic semiconductors
GB201118997D0 (en) * 2011-11-03 2011-12-14 Cambridge Display Tech Ltd Electronic device and method
TW201348241A (zh) * 2011-12-30 2013-12-01 Imp Innovations Ltd 有機半導體材料之非習用性化學摻雜
GB201203159D0 (en) * 2012-02-23 2012-04-11 Smartkem Ltd Organic semiconductor compositions
KR101952706B1 (ko) * 2012-07-24 2019-02-28 삼성디스플레이 주식회사 유기 발광 소자 및 이를 포함하는 유기 발광 표시 장치
US20140116509A1 (en) * 2012-10-30 2014-05-01 Sean Andrew Vail Solid-State Dye-Sensitized Solar Cell Using Oxidative Dopant
GB201502113D0 (en) * 2015-02-09 2015-03-25 Cambridge Display Tech Ltd Solution for a semiconducting layer of an organic electronic device

Also Published As

Publication number Publication date
CN105378960B (zh) 2018-09-18
GB201312609D0 (en) 2013-08-28
US9793504B2 (en) 2017-10-17
US20160149147A1 (en) 2016-05-26
DE112014003272T5 (de) 2016-04-14
TW201517339A (zh) 2015-05-01
JP2016531423A (ja) 2016-10-06
GB2529600A (en) 2016-02-24
JP6356240B2 (ja) 2018-07-11
CN105378960A (zh) 2016-03-02
GB201522168D0 (en) 2016-01-27
WO2015008015A1 (en) 2015-01-22

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Date Code Title Description
PA0105 International application

Patent event date: 20160205

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid