KR20160017905A - 발광소자 및 조명시스템 - Google Patents

발광소자 및 조명시스템 Download PDF

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Publication number
KR20160017905A
KR20160017905A KR1020140101488A KR20140101488A KR20160017905A KR 20160017905 A KR20160017905 A KR 20160017905A KR 1020140101488 A KR1020140101488 A KR 1020140101488A KR 20140101488 A KR20140101488 A KR 20140101488A KR 20160017905 A KR20160017905 A KR 20160017905A
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KR
South Korea
Prior art keywords
electrode
layer
semiconductor layer
ohmic
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020140101488A
Other languages
English (en)
Korean (ko)
Inventor
문지형
김명수
김청송
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020140101488A priority Critical patent/KR20160017905A/ko
Priority to CN201510006933.6A priority patent/CN105826443B/zh
Priority to US14/661,115 priority patent/US9634192B2/en
Priority to JP2015114762A priority patent/JP6714328B2/ja
Priority to EP15175955.2A priority patent/EP2983216B1/en
Publication of KR20160017905A publication Critical patent/KR20160017905A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020140101488A 2014-08-07 2014-08-07 발광소자 및 조명시스템 Ceased KR20160017905A (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020140101488A KR20160017905A (ko) 2014-08-07 2014-08-07 발광소자 및 조명시스템
CN201510006933.6A CN105826443B (zh) 2014-08-07 2015-01-07 发光器件和照明系统
US14/661,115 US9634192B2 (en) 2014-08-07 2015-03-18 Light emitting device and lighting system
JP2015114762A JP6714328B2 (ja) 2014-08-07 2015-06-05 発光素子及び照明システム
EP15175955.2A EP2983216B1 (en) 2014-08-07 2015-07-08 Light emitting device and lighting system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020140101488A KR20160017905A (ko) 2014-08-07 2014-08-07 발광소자 및 조명시스템

Publications (1)

Publication Number Publication Date
KR20160017905A true KR20160017905A (ko) 2016-02-17

Family

ID=53540677

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140101488A Ceased KR20160017905A (ko) 2014-08-07 2014-08-07 발광소자 및 조명시스템

Country Status (5)

Country Link
US (1) US9634192B2 (enExample)
EP (1) EP2983216B1 (enExample)
JP (1) JP6714328B2 (enExample)
KR (1) KR20160017905A (enExample)
CN (1) CN105826443B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10950756B2 (en) 2016-12-06 2021-03-16 Lg Innotek Co., Ltd. Light emitting device including a passivation layer on a light emitting structure
KR20220108596A (ko) * 2021-01-27 2022-08-03 주식회사 어드밴스트뷰테크널러지 마이크로 led 소자, 이의 제조 방법 및 이를 이용한 디스플레이 장치

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9905729B2 (en) 2015-03-27 2018-02-27 Seoul Viosys Co., Ltd. Light emitting diode
TWD180530S (zh) * 2016-05-09 2017-01-01 晶元光電股份有限公司 發光二極體陣列之部分
JP2018006535A (ja) * 2016-06-30 2018-01-11 ウシオ電機株式会社 半導体発光素子
KR20180073866A (ko) 2016-12-23 2018-07-03 엘지이노텍 주식회사 반도체 소자
KR102410809B1 (ko) * 2017-08-25 2022-06-20 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
US10937928B2 (en) 2017-11-09 2021-03-02 Asahi Kasei Kabushiki Kaisha Nitride semiconductor element, nitride semiconductor light emitting element, ultraviolet light emitting element
USD894850S1 (en) * 2018-12-12 2020-09-01 Epistar Corporation Light-emitting device
CN113228308B (zh) * 2018-12-31 2025-05-02 株式会社纳诺艾思 双面发光led芯片
CN110021691B (zh) * 2019-04-03 2020-05-01 厦门市三安光电科技有限公司 一种半导体发光器件
CN116195076A (zh) * 2020-07-17 2023-05-30 首尔伟傲世有限公司 深紫外线发光二极管
WO2023115325A1 (zh) * 2021-12-21 2023-06-29 联嘉光电股份有限公司 高发光效率的小尺寸垂直式发光二极管晶粒
US12062746B2 (en) * 2022-01-18 2024-08-13 Excellence Opto. Inc. Small-sized vertical light emitting diode chip with high energy efficiency
US12155010B2 (en) * 2022-02-15 2024-11-26 Excellence Opto. Inc. Small-size vertical-type light emitting diode chip with high luminous in central region

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6693306B2 (en) 2002-07-22 2004-02-17 United Epitaxy Company, Ltd. Structure of a light emitting diode and method of making the same
JP4882792B2 (ja) * 2007-02-25 2012-02-22 日亜化学工業株式会社 半導体発光素子
JP5040355B2 (ja) * 2007-02-24 2012-10-03 日亜化学工業株式会社 半導体発光素子及びこれを備えた発光装置
JP5223102B2 (ja) * 2007-08-08 2013-06-26 豊田合成株式会社 フリップチップ型発光素子
KR101428053B1 (ko) 2007-12-13 2014-08-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP2010232649A (ja) 2009-03-06 2010-10-14 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
KR100986570B1 (ko) * 2009-08-31 2010-10-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP5793292B2 (ja) * 2010-02-17 2015-10-14 豊田合成株式会社 半導体発光素子
US8664684B2 (en) * 2010-08-31 2014-03-04 Micron Technology, Inc. Solid state lighting devices with improved contacts and associated methods of manufacturing
WO2012067311A1 (en) * 2010-11-18 2012-05-24 Seoul Opto Device Co., Ltd. Light emitting diode chip having electrode pad
US8564010B2 (en) * 2011-08-04 2013-10-22 Toshiba Techno Center Inc. Distributed current blocking structures for light emitting diodes
KR101364721B1 (ko) 2012-03-09 2014-02-20 서울바이오시스 주식회사 전극 패드를 갖는 발광 다이오드 칩
WO2013169032A1 (ko) * 2012-05-09 2013-11-14 서울옵토디바이스주식회사 광추출 효율이 향상된 발광다이오드들
KR101946917B1 (ko) * 2012-06-08 2019-02-12 엘지이노텍 주식회사 발광소자 제조방법
KR101405449B1 (ko) 2012-09-12 2014-06-11 주식회사 세미콘라이트 반도체 발광소자
JP5900284B2 (ja) * 2012-10-25 2016-04-06 豊田合成株式会社 半導体発光素子および発光装置
KR20140062945A (ko) 2012-11-15 2014-05-27 엘지이노텍 주식회사 발광소자

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10950756B2 (en) 2016-12-06 2021-03-16 Lg Innotek Co., Ltd. Light emitting device including a passivation layer on a light emitting structure
KR20220108596A (ko) * 2021-01-27 2022-08-03 주식회사 어드밴스트뷰테크널러지 마이크로 led 소자, 이의 제조 방법 및 이를 이용한 디스플레이 장치
WO2022164088A1 (ko) * 2021-01-27 2022-08-04 주식회사 어드밴스트뷰테크널러지 마이크로 led 소자, 이의 제조 방법 및 이를 이용한 디스플레이 장치

Also Published As

Publication number Publication date
EP2983216B1 (en) 2019-05-08
US9634192B2 (en) 2017-04-25
JP2016039365A (ja) 2016-03-22
JP6714328B2 (ja) 2020-06-24
EP2983216A1 (en) 2016-02-10
CN105826443A (zh) 2016-08-03
US20160043280A1 (en) 2016-02-11
CN105826443B (zh) 2019-04-05

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