WO2023115325A1 - 高发光效率的小尺寸垂直式发光二极管晶粒 - Google Patents

高发光效率的小尺寸垂直式发光二极管晶粒 Download PDF

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WO2023115325A1
WO2023115325A1 PCT/CN2021/140047 CN2021140047W WO2023115325A1 WO 2023115325 A1 WO2023115325 A1 WO 2023115325A1 CN 2021140047 W CN2021140047 W CN 2021140047W WO 2023115325 A1 WO2023115325 A1 WO 2023115325A1
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ohmic contact
type
light
type ohmic
small
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PCT/CN2021/140047
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English (en)
French (fr)
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陈復邦
黄国欣
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联嘉光电股份有限公司
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Priority to PCT/CN2021/140047 priority Critical patent/WO2023115325A1/zh
Publication of WO2023115325A1 publication Critical patent/WO2023115325A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

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  • the invention relates to the grain structure of light-emitting diodes, in particular to a small-sized vertical light-emitting diode grain with high luminous efficiency.
  • LED grains can be mainly divided into three major states: 1. Horizontal type (horizontal) 2. Vertical type (vertical) 3. Flip-chip type (flip-chip).
  • the small-sized horizontal LED die and vertical LED die have low luminous efficiency, so the current high-order small-pitch LED display mainly uses flip-chip small-sized die with better light efficiency, which is surface-mounted.
  • Components SMD: Surface Mounted components
  • the N electrode and the P electrode (P/N electrode) at the bottom of the chip are conductively bonded to the package substrate through the electrode pads. Therefore, the light-emitting surface above the crystal grain is not shielded by electrodes, and has better luminous efficiency in small-sized light-emitting.
  • the N electrode and the P electrode are arranged to be conductively adhered to the carrier board at the same time.
  • the electrode pads are too small and the spacing is too close, which is easy to short circuit.
  • the heat dissipation is also worse than that of the vertical LED on the bottom.
  • the manufacturing process of phosphide red light flip-chip LED grains is much more complicated than that of nitride blue-green light, and the cost of flip-chip LED grains grown on non-sapphire substrates will be higher.
  • Vertical LEDs are much higher. Therefore, vertical LEDs have advantages in reliability for automotive use, but their luminous efficacy is poor. If the luminous efficiency can be improved, it will be beneficial to the development of small-sized LED displays for automotive applications that require high reliability.
  • FIG. 1 The structure of a conventional vertical light-emitting diode is shown in Figure 1, which includes a P-type electrode 1, a grain conductive base structure 2, a reflective layer 3, an interface structure 4, a PN junction structure 5 and a N type electrode pad 6, wherein the grain conductive base structure 2 includes a structural metal layer 2A, a substitute substrate adhesive layer 2B, and a substitute substrate 2C, and the interface structure 4 is a local P-type ohmic contact metal layer, including a P-type Ohmic contact block 4A and non-P-type ohmic contact block 4B.
  • the PN junction structure 5 includes a P-type semiconductor 5A, an active layer 5B and an N-type semiconductor 5C.
  • the vertical light emitting diode has high axial light and good heat dissipation, it is beneficial to color rendering and high temperature operation.
  • the linear side length of traditional small-sized vertical light-emitting diode grains is about 200 microns ( ⁇ m). Since light-absorbing interference substances such as cutting lines, side walls, and metal layer conduction layers need to be provided on the edge of the wafer, it occupies a necessary scale of about 40 ⁇ m.
  • N-type electrode pad 6 N electrode
  • the central light emission is blocked, and the N-type electrode pad 6 is located on the active layer 5B (Active Layer)
  • active layer 5B Active Layer
  • auxiliary lines 6A Finger located above the N-type semiconductor 5C in a forked shape. The more auxiliary lines 6A are arranged on the N-type semiconductor 5C, the better the current distribution will be, but the light-shielding area will also increase.
  • the main purpose of the present invention is a small-sized vertical light-emitting diode crystal grain with high luminous efficiency, which has no shielding and light-absorbing substances on the upper light-emitting surface and the lower reflective surface, which can meet the requirements of high luminous efficiency, and the N-electrode pad.
  • the wire bonding is not located on the plane above the semiconductor PN junction structure to meet the high reliability requirements.
  • the present invention is a small-sized vertical light-emitting diode grain with high luminous efficiency, which includes a P-type electrode, a grain conductive base structure, an interface structure, a PN junction structure, an insulating layer, and a bridge connection through the metal layer, an N-type ohmic contact electrode and an N-type electrode pad.
  • the P-type electrode is disposed on one side of the grain conductive base structure
  • the interface structure is disposed on a side of the grain conductive base structure away from the P-type electrode.
  • the interface structure includes a highly conductive metal layer, a highly reflective metal layer, a local P-type ohmic contact layer and a light-transmitting high-concentration P-type semiconductor layer stacked in sequence, and the interface structure has a light-emitting area platform and a The outer extension platform is adjacent to the light emitting area platform.
  • the partial P-type ohmic contact layer includes a P-type ohmic contact block and a non-P-type ohmic contact block, the P-type ohmic contact block is located under the outer extension platform, and the non-P-type ohmic contact block is located at the Under the region platform, the P-type ohmic contact block is in ohmic contact with the high-concentration P-type semiconductor layer, and the non-P-type ohmic contact block is in non-ohmic contact with the high-concentration P-type semiconductor layer.
  • the PN junction structure includes a P-type semiconductor, an active layer and an N-type semiconductor stacked in sequence, and the P-type semiconductor is arranged on the platform of the light-emitting region, and the PN junction structure has four straight-line side lengths A closed figure, and the ratio of the longest side to the shortest side is less than 3, and the light emitting surface area of the PN junction structure is less than 0.06 square millimeter (mm 2 ).
  • the insulating layer is formed on the outer extension platform, and the insulating layer extends to cover the N-type semiconductor and forms a frame covering area at the length of the four straight sides, and the frame covering area surrounds the N-type semiconductor.
  • the bridging metal layer is disposed on the insulating layer, and two ends respectively extend to the frame coverage area and the outer extension platform.
  • the N-type ohmic contact electrode is in ohmic contact with the N-type semiconductor at a place away from the outer extension platform, and the N-type ohmic contact electrode partially covers the frame coverage area, and the N-type ohmic contact electrode extends to the frame coverage area.
  • the N-type electrode pad is formed on the bridging connected metal layer at a position corresponding to the outer extension platform to electrically connect the bridging connected metal layer.
  • the N-type ohmic contact electrode and the P-type ohmic contact block are arranged in different opposite-side areas, and the geometric configuration of the partially obliquely symmetrical ohmic contact area is used to achieve diagonally downward current conduction on the opposite side, allowing a current Passing through the active layer in the PN junction structure obliquely downward from the N-type ohmic contact electrode, the upper light-emitting surface and the lower light-reflecting surface of the active layer in the PN junction structure have no shielding and light-absorbing substances, and can have good Light efficiency.
  • the bonding wire on the N-type electrode pad is not located on the plane above the PN junction structure of the semiconductor, which meets the requirement of high reliability.
  • Figure 1 is a schematic cross-sectional view of a conventional small-sized vertical LED structure
  • Fig. 2 is a top view surface structure diagram of a conventional small-sized vertical LED
  • Fig. 3 is a schematic cross-sectional view of the grain structure of the first embodiment of the present invention.
  • FIG. 4A is a top view schematic diagram 1 of the grain structure of the first embodiment of the present invention.
  • FIG. 4B is a second schematic top view of the grain structure of the first embodiment of the present invention.
  • FIG. 4C is a top view schematic diagram III of the grain structure of the first embodiment of the present invention.
  • FIG. 5 is a schematic top view of the grain structure of the second embodiment of the present invention.
  • FIG. 6 is a schematic top view of the grain structure of the third embodiment of the present invention.
  • Fig. 7 is a schematic cross-sectional view of the grain structure of the fourth embodiment of the present invention.
  • Fig. 8 is a schematic cross-sectional view of the grain structure of the fifth embodiment of the present invention.
  • FIG. 9 is a schematic cross-sectional view of the grain structure of the sixth embodiment of the present invention.
  • FIG. 3 is the first embodiment of the present invention, which includes a P-type electrode 10, a grain conductive base structure 20, an interface structure 30, a PN junction structure 40, an insulating layer 50, an The metal layer 60 , an N-type ohmic contact electrode 70 and an N-type electrode pad 80 are bridged and connected.
  • the P-type electrode 10 is disposed on one side of the grain conductive base structure 20
  • the interface structure 30 is disposed on a side of the grain conductive base structure 20 away from the P-type electrode 10 .
  • the grain conductive base structure 20 includes a structural metal layer 21 , a substitute substrate adhesive layer 22 , and a substitute substrate 23 .
  • the interface structure 30 includes a highly conductive metal layer 31, a highly reflective metal layer 32, a partial P-type ohmic contact layer 33 and a light-transmitting high-concentration P-type semiconductor layer 34 stacked in sequence, And the interface structure 30 has a light-emitting region platform 301 (the PN junction structure 40 above) and an outer extension platform 302, the outer extension platform 302 is adjacent to the light-emitting region platform 301, and the local P-type ohmic contact layer 33 Including a P-type ohmic contact block 331 and a non-P-type ohmic contact block 332, the P-type ohmic contact block 331 is located under the outer extension platform 302, and the non-P-type ohmic contact block 332 is located on the light-emitting area platform 301 , the non-P-type ohmic contact block 332 is adjacent to the P-type ohmic contact block 331 .
  • the P-type ohmic contact block 331 is in ohmic contact with the high-concentration P-type semiconductor layer 34 to facilitate downward conduction of current, while the non-P-type ohmic contact block 332 is in contact with the high-concentration P-type semiconductor layer 34 to prevent Non-ohmic contact behavior (or Schottky contact) in which current conducts downward.
  • the high-concentration P-type semiconductor layer 34 has a thickness greater than 1 micrometer ( ⁇ m) to facilitate lateral conduction of P-type current.
  • the non-P-type ohmic contact block 332 is made of any one selected from transparent through-dielectric materials and highly reflective metal materials. If the P-type non-ohmic contact block 332 is selected from transparent and transparent dielectric materials, it can be an ODR structure (Omni-Directional Reflector), and the highly reflective metal material can be selected from silver (Ag), aluminum ( Al) or gold (Au), if the P-type non-ohmic contact area 332 is a highly reflective metal material, it needs to be in non-ohmic contact with the high-concentration P-type semiconductor to prevent current from being directly conducted downward from this area.
  • ODR structure Omni-Directional Reflector
  • the highly reflective metal material can be selected from silver (Ag), aluminum ( Al) or gold (Au)
  • the P-type non-ohmic contact area 332 is a highly reflective metal material, it needs to be in non-ohmic contact with the high-concentration P-type semiconductor to prevent current from being directly conducted downward from this area.
  • the PN junction structure 40 is disposed on the light-emitting region platform 301.
  • the PN junction structure 40 includes a P-type semiconductor 41, an active layer 42 and an N-type semiconductor stacked in sequence from bottom to top. 43.
  • the PN junction structure 40 is any one selected from a single PN junction light emitting diode structure or a two PN junction tunnel junction light emitting diode structure (tunnel junction light emitter diode).
  • the P-type semiconductor 41 is disposed on the platform 301 of the light-emitting area, and the highest thickness region of the N-type semiconductor 43 needs to be greater than 2.5 micrometers ( ⁇ m), so as to facilitate lateral current conduction of the N-type semiconductor 43 .
  • the PN junction structure 40 is a closed figure with four straight sides, and has a central region 401, and the ratio of the longest side to the shortest side is less than 3, wherein close to 1 is the best current conduction, and the rectangle is greater than 1 And less than 3 is beneficial to the configuration of multiple crystal grains in the same package, and the light emitting surface area of the PN junction structure 40 is less than 0.06 square millimeters (mm 2 ), and the N-type semiconductor 43 is greater than 2.5 microns ( ⁇ m), which is beneficial to the N-type The lateral current of the semiconductor 43 spreads uniformly.
  • FIGS. 4A to 4C are schematic diagrams of the insulating layer 50, the bridge connection metal layer 60, the N-type ohmic contact electrode 70 and the N-type electrode pad 80, and for clarity.
  • the hierarchical relationship of each layer structure, each layer structure is drawn in an opaque manner.
  • the insulating layer 50 is formed on the outer extension platform 302, and the insulating layer 50 extends to cover the PN junction structure 40 and at the length of the four straight lines.
  • a frame footprint 402 is formed.
  • the insulating layer 50 is usually made of SiO 2 insulating material larger than 500 nanometers (nm) by PECVD, which can have better adhesion to the sidewall of the PN junction structure 40 .
  • the material of the insulating layer 50 can also be TiO 2 or SiN.
  • the N-type electrode pad 80 is made on the bridging connected metal layer 60 and above it.
  • the bridging connected metal layer 60 is arranged on the insulating layer 50 and both ends respectively extend to cover the frame.
  • the N-type electrode pad 80 is formed on the bridging metal layer 60 at a position corresponding to the outer extension platform 302 to electrically connect the bridging metal layer 60 .
  • a circular N-electrode pad is fabricated on the outer extension platform 302 , and about 3 ⁇ m of gold (Au) is deposited on it to facilitate subsequent package bonding.
  • FIG. 4C it is a top view of the grain structure of the first embodiment.
  • the N-type ohmic contact electrode 70 ohmicly contacts the N-type at a place far away from the outer extension platform 302 .
  • Semiconductor 43 the PN junction structure 40
  • the N-type ohmic contact electrode 70 partially covers the frame coverage area 402, and the N-type ohmic contact electrode 70 extends to the frame coverage area 402 and is electrically connected to the span connected to the metal layer 60 .
  • the P-type ohmic contact block 331 is a continuous integral single area, preferably an outward arc-shaped continuous area (as shown in FIG. 4C ).
  • the N-type ohmic contact electrode 70 is also a continuous integral single area, which can be rounded at corners to facilitate current dispersion.
  • the P-type ohmic contact block 331 is disposed under the outer extension platform 302 .
  • the position of the P-type ohmic contact block 331 is also drawn to clearly show the relative positional relationship between the N-type ohmic contact electrode 70 and the P-type ohmic contact block 331 . Accordingly, as shown in FIG. 3 , a current I introduced by the N-type electrode pad 80 can generate the current obliquely downward because of the relative position of the N-type ohmic contact electrode 70 and the P-type ohmic contact block 331 I, the current I passes through the central region 401 of the PN junction structure 40 obliquely downward from the N-type ohmic contact electrode 70 .
  • the P-type ohmic contact block 331A is a plurality of discontinuous regions, such as a plurality of columns (such as BeAu columns in AlGaInP LEDs that can be in ohmic contact with p-GaP ) structure, and the highly conductive metal layer 31 (shown in FIG. 3 ) is chemically stable and highly conductive metal to achieve high lateral current conduction, and the material can be Ag/Au/Al/Ti/TiW or Pt.
  • the high-concentration P-type semiconductor layer 34 is any one selected from P-type gallium phosphide (p-GaP) or P-type indium gallium phosphide (p-Ga (x) In (1-x) P), and High-concentration doping is any one selected from carbon (C) or magnesium (Mg).
  • FIG. 6 is a top view of the grain structure of the third embodiment of the present invention.
  • the PN junction structure 40 is in the shape of a rectangle, and the N-type ohmic contact electrode 70 has at least one extended electrode 72 which is a discontinuous block. It can go deeper into the central region 401 , which is beneficial to adjust the diffusion of the current I, and the N-type ohmic contact electrode 70 has at least one exposed opening 71 extending to the boundary of the PN junction structure 40 .
  • the N-type ohmic contact electrode 70 is also in ohmic contact with the N-type semiconductor 43 (the PN junction structure 40 ) away from the outer extension platform 302, and the N-type ohmic contact electrode 70 covers the frame coverage area 402. In fact, it is only necessary that the length of the N-type ohmic contact electrode 70 covering the frame coverage area 402 is less than 1/2 of the total length of the four straight lines. And in this embodiment, the PN junction structure 40 has a rectangular shape, and the rectangular shape is beneficial to the arrangement of the multi-chip structure 40 in a single package.
  • FIG. 7 is a schematic cross-sectional view of the grain structure of the fourth embodiment of the present invention, wherein in order to increase the conductivity, the P-type ohmic contact block 331B can also extend vertically to the high-conductivity metal layer 31 and the high-concentration P type semiconductor layer 34 .
  • FIG. 8 is a schematic cross-sectional view of the grain structure of the fifth embodiment of the present invention, wherein the interface structure 30 includes the highly conductive metal layer 31, the local P-type ohmic contact layer 33 and the high-concentration metal layer 33 stacked in sequence.
  • P-type semiconductor layer 34 P-type semiconductor layer 34 .
  • the P-type ohmic contact block 331C is disposed in the partial P-type ohmic contact layer 33, and the partial P-type ohmic contact layer 33 also includes a highly reflective metal layer adjacent to the P-type ohmic contact block 331C.
  • non-P-type ohmic contact block 332C, and the non-P-type ohmic contact block 332C can be made of highly reflective metal materials selected from high-concentration P-type semiconductor non-ohmic contacts, such as: silver (Ag), aluminum (Al) or gold (Au).
  • the function of the highly reflective metal layer 32 is replaced by the non-P-type ohmic contact block 332C of highly reflective metal.
  • FIG. 9 is a schematic cross-sectional view of the grain structure of the sixth embodiment of the present invention.
  • the interface structure 30 only includes the highly conductive metal layer 31, the local P-type The ohmic contact layer 33 and the high-concentration P-type semiconductor layer 34, and the P-type ohmic contact block 331C are arranged in the local P-type ohmic contact layer 33, and in this embodiment, the local P-type ohmic contact layer 33 includes As a non-P-type ohmic contact block 332D that replaces the function of the highly reflective metal layer 32, the non-P-type ohmic contact block 332D is an omni-directional mirror ODR structure (Omni-Directional Reflector) (such as SiO 2 /TiO 2 times stacked optical mirrors).
  • ODR structure Omni-Directional Reflector
  • the features of the present invention include at least:

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Abstract

本发明为一种高发光效率的小尺寸垂直式发光二极管晶粒，为让一PN接面结构设置于一界面结构的一发光区平台上，且该发光区平台下设置一高反射金属层，并该界面结构于相邻该发光区平台的一外延伸平台下设置一P型欧姆接触区块，一绝缘层形成于该外延伸平台上且延伸至覆盖该PN接面结构上并环绕形成一边框覆盖区，一N型欧姆接触电极于远离该外延伸平台之处欧姆接触该PN接面结构且覆盖该边框覆盖区，借于局部斜下对称的该N型欧姆接触电极与该P型欧姆接触区块的几何位置配置，达到对边斜下电流传导，让该PN接面结构内的活性层的上方出光面与下方反射光面皆无遮蔽与光吸收物质，而可具有良好的发光效率。

Description

高发光效率的小尺寸垂直式发光二极管晶粒 技术领域
本发明有关于发光二极管的晶粒结构，尤其有关于一种高发光效率的小尺寸垂直式发光二极管晶粒。
背景技术
LED晶粒依据外观、电极排列、半导体层电流方向，主要可分为：1.水平型(horizontal)2.垂直型(vertical)3.覆晶型(flip-chip)三大型态。其中小尺寸的水平型LED晶粒与垂直型LED晶粒发光效率较低，所以目前高阶小间距LED显示屏以使用较佳光效的覆晶型小尺寸晶粒为主，其为表面粘着元件(SMD:Surface Mounted components)，不需于发光面上方以打线方式连接电极垫，晶粒下方底部的N电极与P电极(P/N electrode)通过电极垫与封装载板导电粘结，所以晶粒上方发光表面无电极遮蔽，于小尺寸发光具有较佳的发光效率。
但在小尺寸晶粒底部同时安排N电极与P电极与载板导电粘着，有电极垫太小与间距太接近容易短路的缺点，其散热也较底部整面的垂直型LED差，于汽车使用的条件下，信赖度会有疑虑；另外磷化物红光覆晶型LED晶粒相较氮化物蓝绿光的制程复杂很多，以非蓝宝石基板长晶的覆晶型LED晶粒的成本会较垂直型LED高出许多。所以垂直型LED于车用的信赖度有优势，但其光效较差，若能改改善发光效率，有利于高信赖度需求的车用小尺寸LED显示器的发展。
习知垂直式发光二极管的结构如图1所示，其包含一P型电极1、一晶粒导电基座结构2、一反射层3、一界面结构4、一PN接面结构5与一N型电极垫6，其中该晶粒导电基座结构2包含一结构金属层2A、一替代基板粘合层2B、一替代基板2C，该界面结构4为局部P型欧姆接触金属层，包含P型欧姆接触区块4A与非P型欧姆接触区块4B。该PN接面结构5包含一P型半导体5A、一活性层5B与一N型半导体5C。垂直式发光二极管虽具有高轴向光与良好散热性，有益于显色性与高温条件操作。但传统小尺寸垂直式发光二极管晶粒的直线边长大约为200微米(μm)，由于晶片边缘需要设置切割道、 侧壁、金属层导通层等吸光干扰物质，而占用约40μm的必要尺度，且如图2所示，因N型半导体5C(发光表面)上中央区域有N型电极垫6(N electrode)，中心发光被遮蔽，且N型电极垫6位于活性层5B(Active Layer)与N型半导体5C的上方，因其晶粒与电极垫的面积都极小，于打线时易造成活性层5B微裂痕与缺陷。又通常具有辅助线6A(Finger)以指叉状位于N型半导体5C上方，越多辅助线6A设置于N型半导体5C上，虽然电流分散越佳，但也会增加遮光面积。所以传统小尺寸垂直型LED的光效与信赖性皆劣于小尺寸覆晶型LED，但传统小尺寸垂直型LED的高轴向光与高散热特性，更有利于高对比的车用小间距显示器使用。
发明内容
本发明的主要目的在于一种高发光效率的小尺寸垂直式发光二极管晶粒，其于上方出光面与下方反射面皆无遮蔽与光吸收物质，可达成高光效的需求，并且N电极垫的打线非位于半导体PN接面结构上方的平面，以达高信赖度需求。
本发明为一种高发光效率的小尺寸垂直式发光二极管晶粒，其包含一P型电极、一晶粒导电基座结构、一界面结构、一PN接面结构、一绝缘层、一跨接连通金属层、一N型欧姆接触电极与一N型电极垫。其中该晶粒导电基座结构的一侧设置该P型电极，该晶粒导电基座结构远离该P型电极的一侧设置该界面结构。该界面结构包含依序堆叠的一高导电金属层、一高反射金属层、一局部P型欧姆接触层与一透光的高浓度P型半导体层，并该界面结构具有一发光区平台与一外延伸平台，该外延伸平台相邻该发光区平台。
该局部P型欧姆接触层包含一P型欧姆接触区块与一非P型欧姆接触区块，该P型欧姆接触区块位于该外延伸平台下，该非P型欧姆接触区块位于该发光区平台下，该P型欧姆接触区块与该高浓度P型半导体层达欧姆接触，而该非P型欧姆接触区块与该高浓度P型半导体层为非欧姆接触。
该PN接面结构包含依序堆叠的一P型半导体、一活性层与一N型半导体，且该P型半导体设置于该发光区平台之上，且该PN接面结构为具有四直线边长的封闭图形，且最长边与最短边的比为小于3，并该PN接面结构的发光表面积为小于0.06平方毫米(mm 2)。该绝缘层形成于该外延伸平台上，并该绝缘 层延伸至覆盖该N型半导体上并于该四直线边长处形成一边框覆盖区，该边框覆盖区环绕该N型半导体。该跨接连通金属层设置于该绝缘层上且两端分别延伸至该边框覆盖区上与该外延伸平台上。
该N型欧姆接触电极于远离该外延伸平台之处与该N型半导体达到欧姆接触，且该N型欧姆接触电极部分覆盖该边框覆盖区，又该N型欧姆接触电极为延伸至该边框覆盖区上并电性连接该跨接连通金属层，该N型电极垫于对应于该外延伸平台之处形成于该跨接连通金属层上以电性连接该跨接连通金属层。
据此，通过该N型欧姆接触电极与该P型欧姆接触区块各于不同对边区域，以局部斜下对称的欧姆接触区域几何配置，达到对边斜下电流对边传导，让一电流由该N型欧姆接触电极朝斜下通过该PN接面结构中的活性层，该PN接面结构中的活性层的上方发光面与下方反光面皆无遮蔽与吸光物质，而可具有良好的出光效率。另外，此一设计，该N型电极垫上的打线非位于半导体PN接面结构上方的平面，可达高信赖度需求。
附图说明
图1，为习知小尺寸垂直型LED结构断面示意图；
图2，为习知小尺寸垂直型LED俯视表面结构图；
图3，为本发明第一实施例的晶粒结构断面示意图；
图4A，为本发明第一实施例的晶粒结构俯视示意图一；
图4B，为本发明第一实施例的晶粒结构俯视示意图二；
图4C，为本发明第一实施例的晶粒结构俯视示意图三；
图5，为本发明第二实施例的晶粒结构俯视示意图；
图6，为本发明第三实施例的晶粒结构俯视示意图；
图7，为本发明第四实施例的晶粒结构断面示意图；
图8，为本发明第五实施例的晶粒结构断面示意图；
图9，为本发明第六实施例的晶粒结构断面示意图。
具体实施方式
为对本发明的特征、目的及功效，有更加深入的了解与认同，兹列举一较 佳实施例并配合附图说明如后：
请参阅图3所示，为本发明第一实施例，其包含一P型电极10、一晶粒导电基座结构20、一界面结构30、一PN接面结构40、一绝缘层50、一跨接连通金属层60、一N型欧姆接触电极70与一N型电极垫80。其中该晶粒导电基座结构20的一侧设置该P型电极10，该晶粒导电基座结构20远离该P型电极10的一侧设置该界面结构30。该晶粒导电基座结构20包含一结构金属层21、一替代基板粘合层22、一替代基板23。
在一实施例中，该界面结构30包含依序堆叠的一高导电金属层31、一高反射金属层32、一局部P型欧姆接触层33与一透光的高浓度P型半导体层34，并该界面结构30具有一发光区平台301(上方为该PN接面结构40)与一外延伸平台302，该外延伸平台302相邻该发光区平台301，且该局部P型欧姆接触层33包含一P型欧姆接触区块331与一非P型欧姆接触区块332，该P型欧姆接触区块331位于该外延伸平台302下，该非P型欧姆接触区块332位于该发光区平台301下，该非P型欧姆接触区块332相邻该P型欧姆接触区块331。该P型欧姆接触区块331与该高浓度P型半导体层34达欧姆接触行为，以利电流向下传导，而该非P型欧姆接触区块332与该高浓度P型半导体层34为阻止电流向下传导的非欧姆接触(non-ohmic contact)行为(或称为肖特基接触(Schottky contact))。该高浓度P型半导体层34的厚度为大于1微米(μm)以利P型电流横向导电。
又该非P型欧姆接触区块332为选自透明穿透介电材料与高反射金属材料的任一种制成。如该P型非欧姆接触区块332为选自透明穿透介电材料时可以为全角反射镜ODR结构(Omni-Directional Reflector)，而高反射金属材料可以为选自银(Ag)、铝(Al)或金(Au)，若P型非欧姆接触区块332为高反射金属材料时，需与高浓度P型半导体为非欧姆接触，以避免电流直接由此区域向下导通。
该PN接面结构40设置于该发光区平台301上，一实施例中，该PN接面结构40包含由下而上依序堆叠的一P型半导体41、一活性层42与一N型半导体43，该PN接面结构40为选自单一PN接面的发光二极管结构或两个PN接面的穿隧接面发光二极管结构(tunnel junction light emitter diode)的任一种。且该P型半导体41设置于该发光区平台301之上，且该N型半导体43的最 高厚度区域需大于2.5微米(μm)，以利N型半导体43的横向电流传导。且该PN接面结构40为具有四直线边长的封闭图形，且具有一中心区域401，并最长边与最短边的比为小于3，其中接近1为最佳电流传导，而长方形大于1且小于3有利多颗晶粒于同一封装体的配置，并该PN接面结构40的发光表面积为小于0.06平方毫米(mm 2)，搭配N型半导体43大于2.5微米(μm)，有益N型半导体43的横向电流均匀扩散。
请再一并参阅图4A～图4C所示，为该绝缘层50、该跨接连通金属层60、该N型欧姆接触电极70与该N型电极垫80的施作示意图，且为了清楚表示各层结构的层次关系，各层结构为以不透明的方式绘制。首先如图4A所示，为铺上该绝缘层50，该绝缘层50形成于该外延伸平台302上，并该绝缘层50延伸至覆盖该PN接面结构40上并于该四直线边长处形成一边框覆盖区402。该绝缘层50通常以均向沉积的PECVD施作大于500纳米(nm)的SiO 2绝缘材料，可以对该PN接面结构40的侧壁有较佳附着力。该绝缘层50的材料亦可选用TiO 2或SiN。
接着如图4B所示，为铺上该跨接连通金属层60与其上方制作该N型电极垫80，该跨接连通金属层60设置于该绝缘层50上且两端分别延伸至该边框覆盖区402上与该外延伸平台302上。该N型电极垫80为于对应于该外延伸平台302之处形成于该跨接连通金属层60上以电性连接该跨接连通金属层60。于该外延伸平台302上制作为圆形的N电极垫，且上方沉积金(Au)约3um以利后续封装打线。
接着如图4C所示，为第一实施例的晶粒结构俯视图，为铺上该N型欧姆接触电极70，该N型欧姆接触电极70于远离该外延伸平台302之处欧姆接触该N型半导体43(该PN接面结构40)，且该N型欧姆接触电极70部分覆盖该边框覆盖区402，又该N型欧姆接触电极70为延伸至该边框覆盖区402上并电性连接该跨接连通金属层60。
又在一实施例中，该P型欧姆接触区块331为连续整体单一区域，较佳的为向外弧形连续区域(如图4C所示)。而该N型欧姆接触电极70同样是连续整体单一区域，于转角可以导角以有益电流分散。且该P型欧姆接触区块331设置外延伸平台302下方。
且于图4C中，还绘制该P型欧姆接触区块331的位置，以清楚显示该N 型欧姆接触电极70与该P型欧姆接触区块331的相对位置关系。据此，如图3所示，由该N型电极垫80导入的一电流I，因为该N型欧姆接触电极70与P型欧姆接触区块331的相对位置可以产生斜向向下的该电流I，该电流I由该N型欧姆接触电极70朝斜下通过该PN接面结构40的该中心区域401。
请参阅图5，为本案的第二实施例，该P型欧姆接触区块331A为非连续多个区域，如可以是多个柱状(如于AlGaInP LED的可与p-GaP欧姆接触的BeAu柱状)结构，而高导电金属层31(可参阅图3所示)以化性稳定的高导电的金属达到高横向电流传导，材料可为Ag/Au/Al/Ti/TiW或Pt。而该高浓度P型半导体层34为选自P型磷化镓(p-GaP)或P型磷化铟镓(p-Ga (x)In (1-x)P)的任一种，且高浓度掺杂为选自碳(C)或镁(Mg)的任一种。
请参阅图6所示，为本发明第三实施例的晶粒结构俯视图，该PN接面结构40为长方形状，该N型欧姆接触电极70具有为非连续区块的至少一延伸电极72，其可以更深入该中心区域401，有益于调整电流I的扩散，且该N型欧姆接触电极70具有至少一裸露开口71，该至少一裸露开口71延伸至该PN接面结构40的边界。
该N型欧姆接触电极70同样于远离该外延伸平台302之处欧姆接触该N型半导体43(该PN接面结构40)，且该N型欧姆接触电极70覆盖该边框覆盖区402，在实施上只要让该N型欧姆接触电极70覆盖该边框覆盖区402的覆盖长度为少于该四直线边长的总长度的1/2即可。且于本实施例中，该PN接面结构40为长方形状，长方形有益于多颗晶粒结构40于单一封装体内的排列。
请参阅图7所示，为本发明第四实施例的晶粒结构断面示意图，其中为了增加导电率，P型欧姆接触区块331B还可以垂直延伸至该高导电金属层31与该高浓度P型半导体层34。
请参阅图8所示，为本发明第五实施例的晶粒结构断面示意图，其中该界面结构30包含依序堆叠的该高导电金属层31、该局部P型欧姆接触层33与该高浓度P型半导体层34。该P型欧姆接触区块331C为设置于该局部P型欧姆接触层33内，且该局部P型欧姆接触层33还包含一相邻该P型欧姆接触区块331C且作为该高反射金属层32的非P型欧姆接触区块332C，且该非P型欧姆接触区块332C可以为选自与高浓度P型半导体非欧姆接触的高反射金属材料制成，如:银(Ag)、铝(Al)或金(Au)，于本实施例中该高反射金属层32 的功用以高反射金属的该非P型欧姆接触区块332C替代。
请阅图9所示，为本发明第六实施例的晶粒结构断面示意图，其中与第五实施例相同，该界面结构30仅包含依序堆叠的该高导电金属层31、该局部P型欧姆接触层33与该高浓度P型半导体层34，P型欧姆接触区块331C为设置于该局部P型欧姆接触层33内，且于本实施例中，该局部P型欧姆接触层33包含作为替代该高反射金属层32功用的非P型欧姆接触区块332D，该非P型欧姆接触区块332D为全角反射镜ODR结构(Omni-Directional Reflector)(例如以SiO 2/TiO 2多次堆叠的光学反射镜)。
如上所述，本发明的特点至少包含：
1.利用N型欧姆接触电极与P型欧姆接触区块的电流对边传导的方式，让该N型电极垫导入的电流由该N型欧姆接触电极朝斜下通过该PN接面结构中的活性层的中心区域，由于该PN接面结构中，该中心区域的上方无遮蔽，可达最佳向上出光。另外，向下的光，可通过不吸光的反射面反射至上方出光面，因而可以达成高光效的需求。
2.该N型电极垫下方无该PN接面结构，不会因封装制程的打线应力，而造成该PN接面结构缺陷。另外，N型电极垫因接触电阻产生的热量，不会如习知结构的向下传导至活性层，影响载子复合效率。

Claims (12)

  1. 一种高发光效率的小尺寸垂直式发光二极管晶粒，其特征在于，包含：
    一P型电极；
    一晶粒导电基座结构，该晶粒导电基座结构的一侧设置该P型电极；
    一界面结构，该晶粒导电基座结构远离该P型电极的一侧设置该界面结构，该界面结构包含依序堆叠的一高导电金属层、一高反射金属层、一局部P型欧姆接触层与一透光的高浓度P型半导体层，并该界面结构具有一发光区平台与一相邻该发光区平台的外延伸平台；该局部P型欧姆接触层包含一位于该外延伸平台下的P型欧姆接触区块与一位于该发光区平台下的非P型欧姆接触区块，该P型欧姆接触区块与该高浓度P型半导体层达欧姆接触，而该非P型欧姆接触区块与该高浓度P型半导体层为非欧姆接触；
    一PN接面结构，该PN接面结构包含依序堆叠的一P型半导体、一活性层与一N型半导体，且该P型半导体设置于该发光区平台之上，并该PN接面结构为具有四直线边长的封闭图形，且具有一中心区域，并最长边与最短边的比为小于3，并该PN接面结构的发光表面积为小于0.06平方毫米；
    一绝缘层，该绝缘层形成于该外延伸平台上，并该绝缘层延伸至覆盖该N型半导体上并于该四直线边长处形成一环绕该N型半导体的边框覆盖区；
    一跨接连通金属层，该跨接连通金属层设置于该绝缘层上且两端分别延伸至该边框覆盖区上与该外延伸平台上；
    一N型欧姆接触电极，该N型欧姆接触电极于远离该外延伸平台之处与该N型半导体达到欧姆接触，且该N型欧姆接触电极部分覆盖该边框覆盖区，又该N型欧姆接触电极为延伸至该边框覆盖区上并电性连接该跨接连通金属层；以及
    一N型电极垫，该N型电极垫为于对应该外延伸平台之处形成于该跨接连通金属层上以电性连接该跨接连通金属层。
  2. 根据权利要求1所述的小尺寸垂直式发光二极管晶粒，其特征在于，该N型欧姆接触电极覆盖该边框覆盖区的覆盖长度为少于该四直线边长的总长度的1/2。
  3. 根据权利要求1所述的小尺寸垂直式发光二极管晶粒，其特征在于，该N型半导体的最高厚度区域为大于2.5微米。
  4. 根据权利要求1所述的小尺寸垂直式发光二极管晶粒，其特征在于，该PN接面结构为选自单一PN接面的发光二极管结构或两个PN接面的穿隧接面发光二极管结构的任一种。
  5. 根据权利要求1所述的小尺寸垂直式发光二极管晶粒，其特征在于，该N型欧姆接触电极具有至少一裸露开口，该至少一裸露开口延伸至该PN接面结构的边界。
  6. 根据权利要求1所述的小尺寸垂直式发光二极管晶粒，其特征在于，该N型欧姆接触电极具有至少一伸入该中心区域且为非连续区块的延伸电极。
  7. 根据权利要求1所述的小尺寸垂直式发光二极管晶粒，其特征在于，该高浓度P型半导体层为选自P型磷化镓或P型磷化铟镓的任一种，且高浓度掺杂为选自碳或镁的任一种。
  8. 根据权利要求1所述的小尺寸垂直式发光二极管晶粒，其特征在于，该非P型欧姆接触区块为选自透明穿透介电材料与高反射金属材料的任一种制成。
  9. 根据权利要求8所述的小尺寸垂直式发光二极管晶粒，其特征在于，该非P型欧姆接触区块为选自透明穿透介电材料时，为全角反射镜ODR结构。
  10. 根据权利要求1所述的小尺寸垂直式发光二极管晶粒，其特征在于，该P型欧姆接触区块为选自连续整体单一区域与非连续多个区域的任一种。
  11. 根据权利要求1所述的小尺寸垂直式发光二极管晶粒，其特征在于，该P型欧姆接触区块为垂直延伸至伸入该高导电金属层与该高浓度P型半导体层。
  12. 根据权利要求1所述的小尺寸垂直式发光二极管晶粒，其特征在于，该高浓度P型半导体层的厚度为大于1微米，并该外延伸平台为设置于该高浓度P型半导体层上。
PCT/CN2021/140047 2021-12-21 2021-12-21 高发光效率的小尺寸垂直式发光二极管晶粒 WO2023115325A1 (zh)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1388595A (zh) * 2001-05-30 2003-01-01 佳大世界股份有限公司 具有对边电极的发光二极管元件及其制造方法
WO2014007419A1 (ko) * 2012-07-02 2014-01-09 전자부품연구원 질화물계 반도체 발광 소자 및 그의 제조 방법
CN103855261A (zh) * 2012-12-04 2014-06-11 联胜光电股份有限公司 半导体发光元件
CN105826443A (zh) * 2014-08-07 2016-08-03 Lg伊诺特有限公司 发光器件和照明系统

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1388595A (zh) * 2001-05-30 2003-01-01 佳大世界股份有限公司 具有对边电极的发光二极管元件及其制造方法
WO2014007419A1 (ko) * 2012-07-02 2014-01-09 전자부품연구원 질화물계 반도체 발광 소자 및 그의 제조 방법
CN103855261A (zh) * 2012-12-04 2014-06-11 联胜光电股份有限公司 半导体发光元件
CN105826443A (zh) * 2014-08-07 2016-08-03 Lg伊诺特有限公司 发光器件和照明系统

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