CN103855261A - 半导体发光元件 - Google Patents
半导体发光元件 Download PDFInfo
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- CN103855261A CN103855261A CN201310005652.XA CN201310005652A CN103855261A CN 103855261 A CN103855261 A CN 103855261A CN 201310005652 A CN201310005652 A CN 201310005652A CN 103855261 A CN103855261 A CN 103855261A
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Abstract
本发明公开一种半导体发光元件，其包括：缓冲层、第一光反射层、第一电性半导体层、发光层、保护结构与黏着层。其中第一电性半导体层位于缓冲层与发光层之间。第一光反射层位于第一电性半导体层与缓冲层之间。保护结构位于第一光反射层与缓冲层之间。此外黏着层位于第一电性半导体层与保护结构之间，以提升元件可靠度。
Description
技术领域
本发明涉及半导体元件技术领域，且特别是有关于一种半导体发光元件的结构。
背景技术
传统的氮化镓基发光二极管元件，利用具有发光层之氮化镓基半导体结构的一背面形成金属光反射层，以提升发光层之出光效率。而一般用来形成金属光反射层之材料为银等金属元素。然而金属光反射层容易因后续制程中，高温或高湿度的制程环境，而使得其中的银离子产生迁移(migration)现象，并导致金属光反射层的反射效率降低。
因此有现有技术便提出，利用于金属光反射层之周围设置保护结构之手段，用来解决所述问题。但传统之保护结构一般以金属氧化物为其材料，即使保护结构可避免银离子迁移与氧化问题，但传统保护结构之材料与金属光反射层之间的黏着度不佳，却因而降低了发光二极管元件的可靠度。
因此，有必要提供改进的技术方案以克服现有技术中存在的以上技术问题。
发明内容
本发明要解决的主要技术问题是提升半导体发光元件的可靠度。
为解决所述技术问题，本发明提供一种半导体发光元件，其包括：缓冲层、第一光反射层、第一电性半导体层、发光层、保护结构与黏着层。所述第一电性半导体层位于缓冲层与发光层之间。所述第一光反射层位于第一电性半导体层与缓冲层之间。所述保护结构位于第一光反射层与缓冲层之间。所述黏着层位于第一电性半导体层与保护结构之间。
本发明是利用设置黏着层于第一电性半导体层与缓冲层之间，以提升保护结构与第一光反射层之间的接合强度，以及提升保护结构与第一电性半导体层之间的接合强度，以解决传统之半导体发光元件其可靠度不佳的问题。
通过以下参考附图的详细说明，本发明的其它方面和特征变得明显。但是应当知道，所述附图仅仅为解释的目的设计，而不是作为本发明的范围的限定，这是因为其应当参考附加的权利要求。还应当知道，除非另外指出，不必要依比例绘制附图，它们仅仅力图概念地说明此处描述的结构和流程。
附图说明
下面将结合附图，对本发明的具体实施方式进行详细的说明。
图1为本发明之一实施例之半导体发光元件的结构示意图。
图2为本发明之另一实施例之半导体发光元件的结构示意图。
具体实施方式
为使本发明的所述目的、特征和优点能够更加明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。
需要说明的是，为了图示的清楚起见，本发明的附图仅显示了与本发明的创作点相关的结构特征，而对于其他的结构特征则进行了省略。
图1为本发明之一实施例之半导体发光元件的结构示意图。请参照图1，本发明之半导体发光元件100包括：第一电极层182、基板110、结合层120、缓冲层130、保护结构140、黏着层150、第一光反射层160、第一电性半导体层172、发光层174、第二电性半导体层176、与第二电极层184。
基板110与结合层120位于第一电极层182与缓冲层130之间。基板110的一侧与第一电极层182接触，基板110的相对另一侧与结合层120接触，且结合层120之远离基板110的一侧则与缓冲层130接触。结合层120以黏合基板110与缓冲层130，其材质例如是钛(Ti)/金(Au)/铟(In)之多层结构。基板110为永久基板。在本发明的一实施方式中，基板110为具有导电性的硅基板，第一电极层182为P型电极。
第一电性半导体层172位于缓冲层130与发光层174之间。第一光反射层160位于第一电性半导体层172与缓冲层130之间，用来反射来自发光层174所发射的光线。此外第二电性半导体层176位于发光层174之远离第一电性半导体层172的一侧。在本发明的一实施方式中，第一电性半导体层172为P型氮化镓半导体层，第二电性半导体层176为N型氮化镓半导体层。第二电极层184位于部分第二电性半导体层176之远离发光层174的一侧，且第二电极层184例如是N型电极。值得一提的是，第二电性半导体层176之远离发光层174的一侧例如是粗糙表面，以增加出光散射量。此外，缓冲层130是选自具有导电性且稳定性良好的金属材质，且其热膨胀是数介于氮化镓及硅之间，用来作为氮化镓半导体层与硅基板之间的缓冲膜层，其材质例如是由钛、钨、铂、镍、铝或钛钨其中之二所组成之多层结构。
在本发明的一实施方式中，第一光反射层160的材质例如是银/钛钨/铂合金镀膜，其中银的厚度例如是100~300奈米，钛钨的厚度例如是200~300奈米，铂的厚度例如是小于500奈米。在本发明的另一实施方式中，第一光反射层160的材质可以是银/钛/铂合金镀膜、银/钛/镍合金镀膜或银/镍合金镀膜，其中银的厚度为200~300奈米，钛的厚度为200~300奈米，铂或镍的厚度小于500奈米。第一光反射层160的材质可以为选自银、铝、镍或其他金属元素其中之一。
保护结构140位于第一光反射层160与缓冲层130之间。在一较佳实施例中，部分第一光反射层160与部分缓冲层130接触，而保护结构140环绕于第一光反射层160周围。保护结构140与缓冲层130以共同保护第一光反射层160，以避免第一光反射层160在后续制程中被氧化，也可避免第一光反射层160中的金属在高电流操作时被析出。如此可维持第一光反射层160的反射率，并使得来自发光层174的光线可以被第一光反射层160充分得反射，以提升半导体发光元件100的出光效率及电性稳定。保护结构140的材质可选自二氧化钛、二氧化硅、氮化硅、三氧化二铝、氧化铟锡或分布布拉格反射材料(DBR)其中之一或其组合，其具有稳定、不易改变物性等特性，且保护结构140的厚度为200奈米。
黏着层150位于第一电性半导体层172与保护结构140之间，且位于第一光反射层160与保护结构140之间。即，部分第一光反射层160、部分保护结构140以及部分第一电性半导体层172分别与黏着层150接触。黏着层之材质选自钛钨、钛、铝其中之一。黏着层150以提升保护结构140与第一光反射层160之间的接合强度，也可提升保护结构140与第一电性半导体层172之间的接合强度，如此可相对提升半导体发光元件100的可靠度。
图2为本发明之另一实施例之半导体发光元件的结构示意图。请参照图2，本发明之半导体发光元件200与半导体发光元件100相似，不同的是，半导体发光元件200还包括第二光反射层242。此外，半导体发光元件200与半导体发光元件100有相同的膜层，因此不再赘述。
第二光反射层242位于保护结构140与缓冲层130之间，用来反射由发光层174所发射且入射至保护结构140中之光线，避免发光层174所发出的光线从第一光反射层160边缘的非光反射区(即黏着层150与保护结构140)外漏，以提升发光层174的出光效率。第二光反射层242之材质选自银、铝、镍或其他金属元素其中之一，或银/钛钨/铂合金镀膜、银/钛/铂合金镀膜、银/钛/镍合金镀膜、银/镍合金镀膜其中之一。
综上所述，本发明是通过设置黏着层在第一电性半导体层与缓冲层之间，以提升保护结构与第一光反射层之间的接合强度，并提升保护结构与第一电性半导体层之间的接合强度，以解决传统之半导体发光元件其可靠度不佳的问题。
虽然本发明已以较佳实施例揭露如上，然其并非用来限定本发明，任何熟习此技艺者，在不脱离本发明之精神和范围内，当可作些许之更动与润饰，因此本发明之保护范围当视后附之申请专利范围所界定者为准。
Claims (12)
1.一种半导体发光元件，其特征在于，包括：
缓冲层；
发光层；
第一电性半导体层，位于所述缓冲层与所述发光层之间；
第一光反射层，位于所述第一电性半导体层与所述缓冲层之间；
保护结构，位于所述第一光反射层与所述缓冲层之间；及
黏着层，位于所述第一电性半导体层与所述保护结构之间。
2.如权利要求1所述的半导体发光元件，其特征在于，其中部分所述第一光反射层与部分所述缓冲层接触，所述保护结构环绕所述第一光反射层周围。
3.如权利要求1所述的半导体发光元件，其特征在于，所述黏着层位于所述第一光反射层与所述保护结构之间。
4.如权利要求3所述的半导体发光元件，其特征在于，其中部分所述第一光反射层、部分所述保护结构以及部分所述第一电性半导体层分别与所述黏着层接触。
5.如权利要求1所述的半导体发光元件，其特征在于，所述半导体发光元件还包括第二光反射层，位于所述保护结构与所述缓冲层之间。
6.如权利要求5所述的半导体发光元件，其特征在于，所述第二光反射层的材质选自银(Ag)、铝(Al)、镍(Ni)或其他金属元素其中之一，或银/钛钨/铂合金镀膜、银/钛/铂合金镀膜、银/钛/镍合金镀膜、银/镍合金镀膜。
7.如权利要求1所述的半导体发光元件，其特征在于，所述第一光反射层的材质选自银(Ag)、铝(Al)、镍(Ni)或其他金属元素其中之一，或银/钛钨/铂合金镀膜、银/钛/铂合金镀膜、银/钛/镍合金镀膜、银/镍合金镀膜。
8.如权利要求1所述的半导体发光元件，其特征在于，所述缓冲层是由钛(Ti)、钨(W)、铂(Pt)、镍(Ni)、铝(Al)或钛钨(TiW)其中的二种所组成的多层结构。
9.如权利要求1所述的半导体发光元件，其特征在于，所述保护结构的材质选自二氧化硅(SiO2)、二氧化钛(TiO2)、氧化铟锡(SnInO)、氮化硅(SiN)、三氧化二铝(Al2O3)或分布布拉格反射材料其中之一或其组合。
10.如权利要求1所述的半导体发光元件，其特征在于，所述黏着层的材质选自钛钨(TiW)、钛(Ti)、铝(Al)其中之一。
11.如权利要求1所述的半导体发光元件，其特征在于，所述第一电性半导体层为一P型氮化镓(GaN)半导体层。
12.如权利要求1所述的半导体发光元件，其特征在于，所述半导体发光元件还包括第二电性半导体层，其位于所述发光层的远离所述第一电性半导体层的一侧，所述第二电性半导体层为N型氮化镓(GaN)半导体层。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101145523A TWI499077B (zh) | 2012-12-04 | 2012-12-04 | 半導體發光元件 |
| TW101145523 | 2012-12-04 |
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| WO2023115325A1 (zh) * | 2021-12-21 | 2023-06-29 | 联嘉光电股份有限公司 | 高发光效率的小尺寸垂直式发光二极管晶粒 |
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| CN105489729A (zh) * | 2014-09-18 | 2016-04-13 | 联胜光电股份有限公司 | 具反射镜保护层的发光二极管结构 |
| DE102016106928A1 (de) | 2016-04-14 | 2017-10-19 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
| JP6824501B2 (ja) * | 2017-02-08 | 2021-02-03 | ウシオ電機株式会社 | 半導体発光素子 |
| US9893254B1 (en) * | 2017-04-20 | 2018-02-13 | High Power Opto. Inc. | Structure of high temperature resistant reflecting layer of light-emitting diode |
| US20230231092A1 (en) * | 2022-01-18 | 2023-07-20 | Excellence Opto. Inc. | Small-sized vertical light emitting diode chip with high energy efficiency |
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| Publication number | Publication date |
|---|---|
| US8884323B2 (en) | 2014-11-11 |
| TWI499077B (zh) | 2015-09-01 |
| TW201424034A (zh) | 2014-06-16 |
| US20140151711A1 (en) | 2014-06-05 |
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