KR20150131195A - 수직 전계 효과 디바이스들의 온도 보상을 위한 디바이스 아키텍처 및 방법 - Google Patents

수직 전계 효과 디바이스들의 온도 보상을 위한 디바이스 아키텍처 및 방법 Download PDF

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KR20150131195A
KR20150131195A KR1020157028652A KR20157028652A KR20150131195A KR 20150131195 A KR20150131195 A KR 20150131195A KR 1020157028652 A KR1020157028652 A KR 1020157028652A KR 20157028652 A KR20157028652 A KR 20157028652A KR 20150131195 A KR20150131195 A KR 20150131195A
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South Korea
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temperature coefficient
resistance
field effect
region
sub
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Korean (ko)
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토마스 이. 해링톤
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디3 세미컨덕터 엘엘씨
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    • H01L29/7803—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H01L21/02068—
    • H01L29/66712—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020157028652A 2013-03-13 2014-03-13 수직 전계 효과 디바이스들의 온도 보상을 위한 디바이스 아키텍처 및 방법 Withdrawn KR20150131195A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361778698P 2013-03-13 2013-03-13
US61/778,698 2013-03-13
PCT/US2014/026668 WO2014160453A2 (en) 2013-03-13 2014-03-13 Device architecture and method for temperature compensation of vertical field effect devices

Publications (1)

Publication Number Publication Date
KR20150131195A true KR20150131195A (ko) 2015-11-24

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Family Applications (1)

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KR1020157028652A Withdrawn KR20150131195A (ko) 2013-03-13 2014-03-13 수직 전계 효과 디바이스들의 온도 보상을 위한 디바이스 아키텍처 및 방법

Country Status (6)

Country Link
US (1) US20140264343A1 (https=)
EP (1) EP2973720A4 (https=)
JP (1) JP2016516303A (https=)
KR (1) KR20150131195A (https=)
CN (1) CN105393362A (https=)
WO (1) WO2014160453A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023081586A1 (en) * 2021-11-02 2023-05-11 Analog Power Conversion LLC Semiconductor device with improved temperature uniformity

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DE102014115314B4 (de) * 2014-10-21 2018-10-11 Infineon Technologies Austria Ag Bipolartransistor mit isoliertem gate mit einem thermistor mit negativem temperaturkoeffizienten und herstellungsverfahren
DE102015112919B4 (de) * 2015-08-06 2019-12-24 Infineon Technologies Ag Halbleiterbauelemente, eine Halbleiterdiode und ein Verfahren zum Bilden eines Halbleiterbauelements
WO2017058279A1 (en) * 2015-10-01 2017-04-06 D3 Semiconductor LLC Source-gate region architecture in a vertical power semiconductor device
US9806186B2 (en) 2015-10-02 2017-10-31 D3 Semiconductor LLC Termination region architecture for vertical power transistors
DE102016104256B3 (de) * 2016-03-09 2017-07-06 Infineon Technologies Ag Transistorzellen und Kompensationsstruktur aufweisende Halbleitervorrichtung mit breitem Bandabstand
CN113035950B (zh) * 2019-12-25 2022-08-05 株洲中车时代半导体有限公司 Igbt芯片及其制备方法
US11869762B2 (en) 2020-10-13 2024-01-09 Alpha Power Solutions Limited Semiconductor device with temperature sensing component
CN115976482B (zh) * 2022-12-08 2024-07-23 中国科学院新疆理化技术研究所 一种基于离子注入的ntc复合热敏薄膜的制备方法

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US3477935A (en) * 1966-06-07 1969-11-11 Union Carbide Corp Method of forming thin film resistors by cathodic sputtering
US4837606A (en) * 1984-02-22 1989-06-06 General Electric Company Vertical MOSFET with reduced bipolar effects
JP3030337B2 (ja) * 1991-09-26 2000-04-10 アンリツ株式会社 極低温用温度計
US5304918A (en) * 1992-01-22 1994-04-19 Samsung Semiconductor, Inc. Reference circuit for high speed integrated circuits
JP3054937B2 (ja) * 1996-03-25 2000-06-19 セイコーインスツルメンツ株式会社 半導体装置とその製造方法
US6627949B2 (en) * 2000-06-02 2003-09-30 General Semiconductor, Inc. High voltage power MOSFET having low on-resistance
DE10053957C2 (de) * 2000-10-31 2002-10-31 Infineon Technologies Ag Temperaturkompensierter Halbleiterwiderstand und dessen Verwendung
US7956672B2 (en) * 2004-03-30 2011-06-07 Ricoh Company, Ltd. Reference voltage generating circuit
JP4064436B2 (ja) * 2004-06-11 2008-03-19 松下電器産業株式会社 パワー素子
DE102005061263B4 (de) * 2005-12-20 2007-10-11 Infineon Technologies Austria Ag Halbleiterwafersubstrat für Leistungshalbleiterbauelemente sowie Verfahren zur Herstellung desselben
JP5225546B2 (ja) * 2005-12-27 2013-07-03 株式会社豊田中央研究所 半導体装置
US7397691B2 (en) * 2006-04-24 2008-07-08 International Business Machines Corporation Static random access memory cell with improved stability
JP4483900B2 (ja) * 2007-06-21 2010-06-16 株式会社デンソー 炭化珪素半導体装置の製造方法
US8188484B2 (en) * 2008-12-25 2012-05-29 Rohm Co., Ltd. Semiconductor device
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023081586A1 (en) * 2021-11-02 2023-05-11 Analog Power Conversion LLC Semiconductor device with improved temperature uniformity
US12074198B2 (en) 2021-11-02 2024-08-27 Analog Power Conversion LLC Semiconductor device with improved temperature uniformity

Also Published As

Publication number Publication date
WO2014160453A3 (en) 2014-11-27
WO2014160453A2 (en) 2014-10-02
US20140264343A1 (en) 2014-09-18
CN105393362A (zh) 2016-03-09
EP2973720A4 (en) 2016-11-02
EP2973720A2 (en) 2016-01-20
JP2016516303A (ja) 2016-06-02

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