KR20150130022A - Light emitting device package and method for mafacturing the same - Google Patents

Abstract

An embodiment provides a light emitting device package, which includes a substrate; a first electrode and a second electrode on the substrate; a light emitting device which is electrically connected to the first electrode and the second electrode; and a photoresist film arranged on an upper side and a lateral side of the light emitting device. The photoresist film includes a center region corresponding to the upper side of the light emitting device, and an edge region corresponding to the lateral side of the light emitting device. The thickness of the photoresist in the boundary region of the center region and the edge region is smaller than that of the photoresist film in the center region and the edge region.

Description

TECHNICAL FIELD [0001] The present invention relates to a light emitting device package,

Embodiments relate to a light emitting device package and a manufacturing method thereof.

GaN, and AlGaN are widely used for optoelectronics and electronic devices due to their advantages such as wide and easy bandgap energy.

Particularly, a light emitting device such as a light emitting diode or a laser diode using a semiconductor material of a 3-5 group or a 2-6 group compound semiconductor has been widely used in various fields such as red, green, blue and ultraviolet rays It can realize various colors, and it can realize efficient white light by using fluorescent material or color combination. It has low power consumption, semi-permanent lifetime, fast response speed, safety, and environment compared to conventional light sources such as fluorescent lamps and incandescent lamps Affinity.

Therefore, a transmission module of the optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a white light emitting element capable of replacing a fluorescent lamp or an incandescent lamp Diode lighting, automotive headlights, and traffic lights.

The light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer formed on a substrate made of sapphire or the like. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer One electrode and the second electrode are disposed. In the light emitting device, electrons injected through the first conductive type semiconductor layer and holes injected through the second conductive type semiconductor layer meet with each other to emit light having energy determined by the energy band inherent in the material of the active layer. The light emitted from the active layer may be different depending on the composition of the material forming the active layer, and may be blue light, ultraviolet (UV) light or deep ultraviolet (UV) light.

Such a light emitting element can be arranged in a backlight unit, a lighting device or the like in the form of a package.

1A and 1B are views showing a conventional light emitting device package.

In the light emitting device packages 100a and 100b, the light emitting device 150 is disposed on the bottom surface of the cavity of the package body 110 having the cavity, and the molding parts 180a and 180b including the fluorescent material are filled in the cavity.

At this time, the molding part 180a may be concave like the light emitting device package 100a shown in FIG. 1A, or the molding part 180b may be convexly arranged like the light emitting device package 100b shown in FIG. 1B, If the thicknesses of the molding parts 180a and 180b are irregular, the frequency of the light emitted from the light emitting device to excite the phosphors varies, so that the distribution of color on-off patterns may be changed in accordance with the direction of light emission in the same light emitting device package.

In order to solve the above-described problems, a method of forming a phosphor layer on the upper surface of a light emitting element by a conformal coating method or bonding a phosphor film has been devised.

However, in the case of a horizontal type light emitting device or a flip chip light emitting device, light is emitted from the side. In case of conformal coating, it may be difficult to form a phosphor on the side of the light emitting device. It may be difficult to adhere the phosphor film having the same color temperature to the upper surface and the side surface of the phosphor film.

In the embodiment, the phosphor is uniformly arranged on the side surface and the upper surface of the light emitting device to uniformize the color temperature in the entire region of the light emitting device package.

An embodiment includes a substrate; A first electrode and a second electrode on the substrate; A light emitting element electrically connected to the first electrode and the second electrode; And a phosphor film disposed on an upper surface and a side surface of the light emitting device, wherein the phosphor film includes a central region corresponding to an upper surface of the light emitting device and an edge region corresponding to a side surface of the light emitting device, The thickness of the phosphor film in the boundary region between the central region and the edge region is smaller than the thickness of the phosphor film in the central region and the edge region.

The phosphor film and the light emitting element may be bonded with a silicone-based adhesive.

The thickness of the phosphor film in the boundary region may be 40% to 60% of the thickness of the phosphor film in the central region or the edge region.

The boundary region may be formed by cutting the surface of the phosphor film in a direction opposite to the light emitting element.

The height of the edge region of the phosphor film may be 10% to 20% of the length of one side of the central region of the phosphor film.

The light emitting element may be a flip chip light emitting element.

The light emitting device is a horizontal light emitting device, an electrode bonding region is formed on the light emitting device, and a region corresponding to the electrode bonding region is removed from the central region of the fluorescent film.

The first electrode pad and the second electrode pad are disposed in the electrode bonding region and the height of the upper surface of the first electrode pad and the second electrode pad may be lower than the height of the upper surface of the phosphor film.

Another embodiment includes the steps of preparing a phosphor film disposed on a first sheet; Cutting between the center region and the edge region of the phosphor film; Applying an adhesive to the light emitting element disposed on the substrate; And arranging the phosphor film on the light emitting device and folding the edge region to couple the central region of the phosphor film to the upper surface of the light emitting device, And a step of bonding the light emitting device package to the light emitting device package.

In the step of applying the adhesive, a silicone-based adhesive may be applied to the upper surface of the light-emitting device.

The method of manufacturing a light emitting device package may further include moving an adhesive to a side of the light emitting device.

The step of cutting may cut 40% to 60% of the thickness of the phosphor film in a region between the center region and the edge region of the phosphor film.

The cutting step may cut the phosphor film in a direction opposite to the first sheet.

The method of manufacturing a light emitting device package may further include disposing a second sheet on a cut fluorescent film, wherein after removing the first sheet, the fluorescent film is bonded to the light emitting element, And removing the sheet.

The step of preparing the phosphor film may include preparing a phosphor film comprising a central region of a quadrangle and a rim region consisting of four quadrangles connected to four sides of the quadrangle, respectively.

The area of one square of the edge region may be 10% to 20% of the area of the square of the central region.

The light emitting element is a flip chip light emitting element, and the phosphor film may be coupled to the upper surface and the side surface of the substrate of the light emitting element.

The light emitting device is a horizontal light emitting device, an electrode bonding region is disposed on the upper surface of the light emitting device, and a method of manufacturing the light emitting device package includes cutting a region corresponding to the electrode bonding region in the central region of the phosphor film .

The manufacturing method of the light emitting device package may further include connecting the electrode bonding region to the wire.

The light emitting device package and the method of manufacturing the same according to the embodiment can easily arrange a phosphor film having the same thickness and CIE chromaticity coordinates on the upper surface and the side surface of the light emitting device.

1A and 1B are views showing a conventional light emitting device package,
FIGS. 2A to 2E are views showing an embodiment of a method of manufacturing a phosphor film,
3A to 3G are views showing a method of manufacturing a light emitting device package using a fluorescent film,
4A to 4F are views showing one embodiment of a method of manufacturing a light emitting device package using a fluorescent film,
5A and 5B are views showing other embodiments of the phosphor film,
6 is a view showing an embodiment of a backlight unit in which light emitting devices are arranged,
7 is a view showing an embodiment of a lighting apparatus in which a light emitting device package is disposed.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG.

In the description of embodiments according to the present invention, in the case of being described as being formed "on or under" of each element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

In this embodiment, in the phosphor film, regions corresponding to the upper surface and the side surface of the light emitting device are cut by half cutting or the like, and then folded and bonded to the upper surface and the side surface of the light emitting device, respectively .

2A to 2E are views showing an embodiment of a method of manufacturing a phosphor film.

The phosphor film material 200 on which the phosphor film 220 disposed on the first sheet 210 is disposed is prepared as shown in FIG. The first sheet 210 can be easily separated from the phosphor sheet 220 by fixing the phosphor sheet 220 and a phosphor may be included in the base material such as silicon.

As shown in FIG. 2B, the phosphor film 220 may be separated into a size corresponding to each light emitting device, and may be separated by a method such as cutting. At this time, the separated phosphor films 220 may be large enough to cover the upper surface and the side surface of each light emitting device.

At this time, the separated phosphor film 220 is divided into a non-rectangular type shown in FIG. 2C. In FIG. 2C and FIG. 2D, a central region and an edge region will be described later.

Although not shown, it is possible to perform CIE chromaticity coordinate inspection of each of the separated phosphor films 220. The CIE chromaticity coordinates of the phosphor film 220 may be examined before the phosphor film 220 is separated into a size corresponding to each light emitting element, (220). ≪ / RTI >

Cut halfway between the central region and the edge region of each separated phosphor film 220 as shown in FIG. 2C. In FIG. 2C, the area shown by the dotted line is a half cut area. The half cut means that a part of the entire thickness of the phosphor film 220 is cut so that the phosphor film 220 can be easily bent. For example, the thickness of 40% to 60% of the phosphor film 220 can be cut, and the thickness to be cut can be varied as needed.

The half cut is one embodiment of cutting, and the thickness of the phosphor film 220 may be made thinner in the boundary region described later by other methods.

A half cut area indicated by a dotted line in FIG. 2C, that is, the inside of the boundary area is a center area of the phosphor film 220 and is an area to be adhered to the upper surface of the light emitting device, and the outside of the boundary area is to be adhered to the side surface of the light emitting device . In addition, the half-cut area may be referred to as a border area. In addition to the half cut, the phosphor film may be cut by other methods, and the thickness of the phosphor film 220 in the boundary area may be the center area and the edge The thickness of the phosphor film 220 may be less than the thickness of the phosphor film 220 and may have a thickness of, for example, 40% to 60%.

That is, the phosphor film 220 is half-cut between the central region of the quadrangle and the edge regions of the four quadrangles connected to the four sides of the quadrangle.

In FIG. 2C, the cross-sectional shape of the central region of the phosphor film 220 is a quadrangle, the lengths of the sides are similar to each other, and the shape of the edge region is a quadrangle. The four edge regions adjacent to the central region may be the same shape since they are regions to be bonded to the side surface of one light emitting element.

The length L ₂ of one side of the edge region of the phosphor film 220 of FIG. 2C may be 10% to 20% of the length L ₁ of one side of the center region, The area of one area can be 10% to 20% of the area of the center area. This is a case where the length of one side of the upper surface of the light emitting element is 1 micrometer and the height of the side surface is 150 nanometers.

Sectional view taken along the line I-I 'of FIG. 2 (D) to FIG. 2 (C).

The phosphor film 220 is disposed on the first sheet 210 and the phosphor film 220 is disposed in the periphery of the central region 221 and the edge region 222 is disposed in the center region 221 221 and the edge region 222 are arranged in a bordered area.

40% to 60% of the thickness (h1) of the total phosphor film 220 at the boundary region is cut, after cutting the half cutting area, i.e., thickness of the phosphor film 220 from the boundary region (h ₂₎ is the total phosphor film ( (H ₁ ) of the _first and _second substrates (220, 220).

2, the second sheet 230 is disposed on the upper side of the phosphor film 220. As shown in FIG. The second sheet 230 may be a contact surface that folds and presses the phosphor film 220 when the phosphor film 220 is disposed on the upper and side surfaces of the light emitting device.

3A to 3G are views showing an embodiment of a method of manufacturing a light emitting device package using a phosphor film.

In this embodiment, a method of adhering the phosphor film prepared by the processes of Figs. 2A to 2E or the like to the side surface and the upper surface of each light emitting element will be described.

An array of light emitting devices 400a is disposed on the substrate 310 as shown in FIG.

In Fig. 3A, one light emitting device 400a is shown in Fig. 3b. In this embodiment, the light emitting device 400a may be a flip chip type light emitting device.

A first electrode 322 and a second electrode 326 are disposed on the substrate 310. [ The light emitting device 400a includes a light emitting structure 420 including a first conductive semiconductor layer 422, an active layer 424, and a second conductive semiconductor layer 426 on a supporting substrate 410, A first electrode pad 432 and a second electrode pad 436 disposed on the first conductivity type semiconductor layer 422 and the second conductivity type semiconductor layer 426, respectively.

The support substrate 410 may be formed of a material suitable for semiconductor material growth or a carrier wafer, may be formed of a material having excellent thermal conductivity, and may include a conductive substrate or an insulating substrate. For example, at least one of sapphire (Al ₂ O ₃ ), SiO ₂ , SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge and Ga ₂ O ₃ can be used.

The active layer 434 and a part of the first conductivity type semiconductor layer 422 may be formed from the second conductivity type semiconductor layer 436 to the first conductivity type semiconductor layer 422 in order to dispose the first electrode pad 432 on the first conductivity type semiconductor layer 422 The first electrode pad 422 may be disposed on the exposed first conductive semiconductor layer 422 by etching.

The first electrode pad 432 and the second electrode pad 436 are electrically connected to the first electrode 322 and the second electrode 326 on the substrate 310 by conductive adhesives 452 and 456 ), And the conductive adhesive 452, 456 may be a solder.

3C, an adhesive 350 is applied on each light emitting device 400a. The adhesive 350 may be a non-conductive adhesive, and in the present embodiment, it may be a silicone-based adhesive. The adhesive 350 may be injected by one drop onto the upper surface of the light emitting device 400a and may move to the side of the light emitting device 400a in a pressing process described later.

In FIG. 3D, the phosphor film material 200 of FIG. 2E is placed on the light emitting device 400a on the substrate 310. FIG. At this time, the first sheet is removed from the phosphor film material 200 so that the phosphor film 220 can directly contact the light emitting device 400a.

3E, the phosphor film 220 is adhered to the light emitting device 400a, and the edge of the phosphor film material 200 is pressed on the top of the light emitting device 400a on the substrate 310. [ At this time, the phosphor film 220 in the half-cut area can be folded as shown in FIG. 3F. In the folded region, the phosphor film 220 is inclined obliquely to the center region and the edge region as shown in the figure, so that the edge of the phosphor film 220 is 'chamfered' .

3F, the half-cut area or border area of the phosphor film 220 is folded, the central area of the phosphor film 220 is bonded to the upper surface of the light emitting device 400a, Or the like. Although the length of the edge region of the phosphor film 220 is different in FIG. 3F, since the height of the light emitting structure is several tens to several hundreds of nanometers, the length of the edge region of the phosphor film 220 may be substantially the same.

The silicone-based adhesive 350 spreads on the side surface and the upper surface of the light emitting device 400a when the fluorescent film 220 is pressed and attached to the light emitting device 400a so that the fluorescent film 220 is irradiated to the light emitting device 400a ). At this time, due to the boundary region of the phosphor film 220, the center region and the edge region can be easily folded.

The state in which the second sheet 230 is removed in Fig. 3F is shown in Fig. 3G.

3G, a first electrode 322 and a second electrode 326 are disposed on a substrate 310, and a conductive adhesive (not shown) is formed on the first electrode 322 and the second electrode 326 452, and 456 of the light emitting device 400a.

The light emitting device 400a includes a light emitting structure 420 including a first conductive semiconductor layer 422, an active layer 424, and a second conductive semiconductor layer 426 on a supporting substrate 410, A first electrode pad 432 and a second electrode pad 436 disposed on the first conductivity type semiconductor layer 422 and the second conductivity type semiconductor layer 426, respectively.

The phosphor film 220 is disposed on the upper surface and the side surface of the light emitting device 400a and the phosphor film 220 is coupled to the upper surface and the side surface of the supporting substrate 410, .

The phosphor film 220 is formed such that the length L ₂ of one side of the edge region coupled with the side surface of the element 400a is equal to the length L ₁ of one side of the central region coupled with the top surface of the light emitting device 400a ) ≪ / RTI >

The boundary region, that is, the half-cut region in this embodiment, is thinner than the other regions in the phosphor film 220 and has a thickness of 40% to 60% As shown in FIG.

In the light emitting device package according to the above-described embodiment, the phosphor film is uniform in thickness on the upper and side surfaces, and the phosphor film disposed on the upper surface and the side surface may be manufactured in the same process to exhibit the same CIE color coordinates.

4A to 4F are views showing one embodiment of a method of manufacturing a light emitting device package using a phosphor film.

The present embodiment is similar to the embodiment shown in Figs. 3A to 3G, but differs in the process of attaching the phosphor film to the horizontal light emitting device.

The array of light emitting devices 400b is disposed on the substrate 310 as shown in FIG.

In FIG. 4A, one light emitting device 400b is shown in FIG. 4B. In the present embodiment, the light emitting device 400b may be a horizontal type light emitting device, and the phosphor film material 200 is the same as that of the above-described embodiment, and a part corresponding to the electrode bonding area of the light emitting device is removed And will be described later.

The light emitting device 400b includes a light emitting structure 420 including a first conductive semiconductor layer 422, an active layer 424, and a second conductive semiconductor layer 426 on a supporting substrate 410, A first electrode pad 432 and a second electrode pad 436 disposed on the first conductivity type semiconductor layer 422 and the second conductivity type semiconductor layer 426, respectively.

The support substrate 410 may be formed of a material suitable for semiconductor material growth or a carrier wafer, may be formed of a material having excellent thermal conductivity, and may include a conductive substrate or an insulating substrate. For example, at least one of sapphire (Al ₂ O ₃ ), SiO ₂ , SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge and Ga ₂ O ₃ can be used.

The active layer 434 and a part of the first conductivity type semiconductor layer 422 may be formed from the second conductivity type semiconductor layer 436 to the first conductivity type semiconductor layer 422 in order to dispose the first electrode pad 432 on the first conductivity type semiconductor layer 422 The first electrode pad 422 may be disposed on the exposed first conductive semiconductor layer 422 by etching.

The first electrode pad 432 and the second electrode pad 436 of the light emitting device 400a described above are connected to a first electrode (not shown) and a second electrode (not shown) on the substrate 310, respectively, As shown in FIG.

4C, the adhesive 350 is applied on each light emitting device 400b and the phosphor film material 200 is placed on the light emitting device 400b on the substrate 310. [ The adhesive 350 may be a non-conductive adhesive, and in the present embodiment, it may be a silicone-based adhesive. The adhesive 350 may be injected by one drop onto the upper surface of the light emitting device 400b and may move to the side surface of the light emitting device 400b in a pressing process described later.

At this time, the first sheet is removed from the phosphor film material 200, and the phosphor film 220 can directly contact the light emitting device 400b. 4C, the phosphor film 220 is partially removed from the open regions C ₁ and C ₂ shown by the dotted lines. The open regions C ₁ and C _{2 are} formed in the first electrode 422 and the second electrode pad 426, respectively. The open regions C ₁ and C ₂ described above can be formed in the central region of the phosphor film 220.

4E, the phosphor film 220 is adhered to the light emitting device 400b, and the edge of the phosphor film material 200 is pressed on the upper side of the light emitting device 400b on the substrate 310. [ At this time, the phosphor film 220 of the half-cut area can be folded.

The boundary region of the phosphor film 220 is folded in Figure 4E and the central region of the phosphor film 220 is bonded to the upper surface of the light emitting device 400b and the edge region is bonded to the side of the light emitting device 400b have.

The silicon-based adhesive 350 spreads on the side surface and the upper surface of the light emitting device 400b when the phosphor film 220 is pressurized and adhered to the light emitting device 400b so that the light emitting device 400b ). At this time, due to the boundary region of the phosphor film 220, the center region and the edge region can be easily folded.

The state in which the second sheet 230 is removed in Fig. 4E is shown in Fig. 4F.

4F, a light emitting device 400b is disposed on a substrate 310. The light emitting device 400b includes a first conductive semiconductor layer 422 and an active layer 424 on a support substrate 410. [ And a second conductive semiconductor layer 426 are disposed on the first conductive semiconductor layer 422 and the second conductive semiconductor layer 426. The first conductive semiconductor layer 422 and the second conductive semiconductor layer 426, And includes a pad 432 and a second electrode pad 436.

A phosphor film 220 is disposed on the upper surface and the side surface of the light emitting device 400b. The phosphor film 220 is coupled to the upper surface and the side surface of the support substrate 410, .

The half-cut area has a thickness that is thinner than the other areas in the phosphor film 220, that is, 40% to 60%, and is disposed corresponding to the edge of the support substrate 410 of the light emitting device 400b .

The phosphor film 220 is formed on the first electrode pad 432 and the second electrode pad 436 by removing the region corresponding to the first electrode pad 432 and the second electrode pad 436, (Not shown) may be electrically connected to the first electrode 436 through the wire 470, respectively.

4F, the upper surface of the first electrode 432 and the second electrode pad 436 are disposed higher than the upper surface of the phosphor film 220. In the wire bonding process, the first electrode 432 The upper surface of the first electrode 432 and the second electrode pad 436 may be disposed lower than the upper surface of the phosphor film 220. In this case,

4E and 4F, the phosphor film 220 is disposed at a different height from the upper portion of the light emitting device 400b. However, since the thickness of the light emitting structure 400 is several tens to several nanometers in the light emitting device 400b, They can be disposed at almost the same height.

In the light emitting device package according to the above-described embodiment, the phosphor film is uniform in thickness on the upper and side surfaces, and the phosphor film disposed on the upper surface and the side surface may be manufactured in the same process to exhibit the same CIE color coordinates.

5A and 5B are views showing other embodiments of the phosphor film.

The phosphor film 220a is disposed on the first sheet 210a and the phosphor film 220a has an edge region 222a in the periphery of the central region 221a And a half cut area, that is, a boundary area is disposed between the center area 221a and the edge area 222a.

40% to 60% of the thickness h ₁ of the entire phosphor film 220 in the boundary region is cut so that the thickness h ₂ of the phosphor film 220 in the boundary region is equal to the thickness h ₂ of the entire phosphor film 220 ₁ ). ≪ / RTI >

The embodiment shown in FIG. 5A differs from the embodiment shown in FIG. 2D in that the phosphor film is cut into a rectangular shape instead of a 'V' shape in the boundary region. In the embodiment shown in FIG. 5B, U 'shape.

The light emitting device package manufactured using the phosphor film shown in FIGS. 5A and 5B may differ from the above-described embodiments in the shape of the phosphor film in the region corresponding to the edge of the upper region of the light emitting device.

Hereinafter, an image display apparatus and a lighting apparatus will be described as an embodiment of an illumination system in which the above-described light emitting device package is disposed.

6 is a view showing an embodiment of an image display device including a light emitting device package.

As shown in the drawing, the image display apparatus 500 according to the present embodiment includes a light source module, a reflection plate 520 on the bottom cover 510, and a reflection plate 520 disposed in front of the reflection plate 520, A first prism sheet 550 and a second prism sheet 560 disposed in front of the light guide plate 540 and a second prism sheet 560 disposed between the first prism sheet 560 and the second prism sheet 560, A panel 570 disposed in front of the panel 570 and a color filter 580 disposed in the front of the panel 570.

The light source module includes the light emitting device package on the circuit board 530, and the circuit board 530 may be a PCB or the like, and the light emitting device package is in accordance with the embodiment described above.

The bottom cover 510 can house the components in the image display apparatus 500. The reflective plate 520 may be formed as a separate component as shown in the drawing, or may be provided on the rear surface of the light guide plate 540 or on the front surface of the bottom cover 510 with a highly reflective material.

The reflector 520 can be made of a material having a high reflectance and can be used in an ultra-thin shape, and a polyethylene terephthalate (PET) can be used.

The light guide plate 540 scatters the light emitted from the light emitting device package module so that the light is uniformly distributed over the entire screen area of the LCD. Accordingly, the light guide plate 530 is made of a material having a good refractive index and transmittance. The light guide plate 530 may be formed of poly methylmethacrylate (PMMA), polycarbonate (PC), or polyethylene (PE). Also, if the light guide plate 540 is omitted, an air guide display device can be realized.

The first prism sheet 550 is formed on one side of the support film with a translucent and elastic polymer material. The polymer may have a prism layer in which a plurality of steric structures are repeatedly formed. As shown in the drawings, the plurality of patterns may be repeatedly provided with a stripe pattern.

In the second prism sheet 560, a direction of a floor and a valley of one side of the supporting film may be perpendicular to a direction of a floor and a valley of one side of the supporting film in the first prism sheet 550. This is for evenly distributing the light transmitted from the light source module and the reflective sheet in all directions of the panel 570.

In this embodiment, the first prism sheet 550 and the second prism sheet 560 constitute an optical sheet, which may be made of other combinations, for example, a microlens array or a combination of a diffusion sheet and a microlens array Or a combination of one prism sheet and a microlens array, or the like.

A liquid crystal display (LCD) panel may be disposed on the panel 570. In addition to the liquid crystal display panel 560, other types of display devices requiring a light source may be provided.

In the panel 570, a liquid crystal is positioned between glass bodies, and a polarizing plate is placed on both glass bodies to utilize the polarization of light. Here, the liquid crystal has an intermediate property between a liquid and a solid, and liquid crystals, which are organic molecules having fluidity like a liquid, are regularly arranged like crystals. Using the property that the molecular arrangement is changed by an external electric field And displays an image.

A liquid crystal display panel used in a display device is an active matrix type, and a transistor is used as a switch for controlling a voltage supplied to each pixel.

A color filter 580 is provided on the front surface of the panel 570 so that only the red, green, and blue light is transmitted through the panel 570 for each pixel.

7 is a view showing an embodiment of a lighting apparatus in which a light emitting device package is disposed.

The lighting apparatus according to the present embodiment may include a cover 1100, a light source module 1200, a heat discharger 1400a, a power supply unit 1600, an inner case 1700, and a socket 1800. [ In addition, the illumination device according to the embodiment may further include at least one of the member 1300 and the holder 1500, and the light source module 1200 includes the light emitting device package according to the above- It is possible to adjust the angle of light emission by the cavity structure formed in the device and to have a light concentration effect in a specific direction so that it is possible to adjust the light emitting area without a separate mechanism outside the lighting device.

The cover 1100 may have a shape of a bulb or a hemisphere and may be provided in a shape in which the hollow is hollow and a part is opened. The cover 1100 may be optically coupled to the light source module 1200. For example, the cover 1100 can diffuse, scatter, or excite light provided from the light source module 1200. The cover 1100 may be a kind of optical member. The cover 1100 may be coupled to the heat discharging body 1400a. The cover 1100 may have an engaging portion that engages with the heat discharging body 1400a.

The inner surface of the cover 1100 may be coated with a milky white paint. Milky white paints may contain a diffusing agent to diffuse light. The surface roughness of the inner surface of the cover 1100 may be formed larger than the surface roughness of the outer surface of the cover 1100. This is for sufficiently diffusing and diffusing light from the light source module 1200 and emitting it to the outside.

The cover 1100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 1100 may be transparent so that the light source module 1200 is visible from the outside, and may be opaque. The cover 1100 may be formed by blow molding.

The light source module 1200 may be disposed on one side of the heat discharging body 1400a. Accordingly, heat from the light source module 1200 is conducted to the heat discharging body 1400a. The light source module 1200 may include a light emitting device package 1210, a connection plate 1230 and a connector 1250. The light emitting device package 1210 may be in accordance with the embodiments described above.

The member 1300 is disposed on the upper surface of the heat discharging body 1400a and has guide grooves 1310 into which the plurality of light emitting element packages 1210 and the connector 1250 are inserted. The guide groove 1310 corresponds to the substrate of the light emitting device package 1210 and the connector 1250.

The surface of the member 1300 may be coated or coated with a light reflecting material. For example, the surface of the member 1300 may be coated or coated with a white paint. The member 1300 reflects the light reflected by the inner surface of the cover 1100 and returns toward the light source module 1200 toward the cover 1100. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 1300 may be made of an insulating material, for example. The connection plate 1230 of the light source module 1200 may include an electrically conductive material. Therefore, electrical contact may be made between the heat discharging body 1400a and the connecting plate 1230. [ The member 1300 may be formed of an insulating material to prevent an electrical short circuit between the connection plate 1230 and the heat discharger 1400a. The heat discharger 1400a receives heat from the light source module 1200 and heat from the power supply unit 1600 to dissipate heat.

The holder 1500 closes the receiving groove 1719 of the insulating portion 1710 of the inner case 1700. Therefore, the power supply unit 1600 housed in the insulating portion 1710 of the inner case 1700 is sealed. The holder 1500 has a guide protrusion 1510. The guide protrusion 1510 has a hole through which the projection 1610 of the power supply unit 1600 passes.

The power supply unit 1600 processes or converts an electric signal provided from the outside and provides the electric signal to the light source module 1200. The power supply unit 1600 is housed in the receiving groove 1719 of the inner case 1700 and is sealed inside the inner case 1700 by the holder 1500. The power supply unit 1600 may include a protrusion 1610, a guide unit 1630, a base 1650, and an extension unit 1670.

The guide portion 1630 has a shape protruding outward from one side of the base 1650. The guide portion 1630 may be inserted into the holder 1500. A plurality of components may be disposed on one side of the base 1650. The plurality of components may include, for example, a DC converter for converting an AC power supplied from an external power source to a DC power source, a driving chip for controlling driving of the light source module 1200, an ESD (ElectroStatic discharge) protective device, and the like, but the present invention is not limited thereto.

The extending portion 1670 has a shape protruding outward from the other side of the base 1650. The extension portion 1670 is inserted into the connection portion 1750 of the inner case 1700 and receives an external electrical signal. For example, the extension portion 1670 may be provided to be equal to or smaller than the width of the connection portion 1750 of the inner case 1700. The other end of each of the "+ wire" and the "wire" may be electrically connected to the socket 1800.

The inner case 1700 may include a molding part together with the power supply unit 1600 in the inner case 1700. The molding part is a hardened portion of the molding liquid so that the power supply providing part 1600 can be fixed inside the inner case 1700.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100a, 100b: light emitting device package 110: package body
150, 250, 400a, 400b: Light emitting element 180a, 180b:
200: phosphor film material 210: first sheet
220: phosphor film 221: central region
222: rim area 230: second sheet
310: substrate 322: first electrode
326: second electrode 350: adhesive
410: support substrate 420: light emitting structure
432: first electrode pad 436: second electrode pad
452, 456: conductive adhesive agent 470: wire
500: Video display device

Claims (19)

Board;
A first electrode and a second electrode on the substrate;
A light emitting element electrically connected to the first electrode and the second electrode; And
And a phosphor film disposed on an upper surface and a side surface of the light emitting element,
Wherein the phosphor film has a central region corresponding to an upper surface of the light emitting device and an edge region corresponding to a side surface of the light emitting device, and a thickness of the phosphor film in a boundary region between the central region and the edge region, Wherein the thickness of the phosphor film in the central region and the edge region is smaller than the thickness of the phosphor film in the central region and the edge region. The method according to claim 1,
Wherein the phosphor film and the light emitting device are bonded to each other with a silicone-based adhesive. The method according to claim 1,
Wherein the thickness of the phosphor film in the boundary region is 40% to 60% of the thickness of the phosphor film in the central region or the edge region. The method according to claim 1,
Wherein the boundary region is formed by cutting the surface of the phosphor film in a direction opposite to the light emitting element. The method according to claim 1,
Wherein the height of the edge region of the phosphor film is 10% to 20% of the length of one side of the central region of the phosphor film. The method according to claim 1,
Wherein the light emitting device is a flip chip light emitting device. The method according to claim 1,
Wherein the light emitting element is a horizontal light emitting element, an electrode bonding region is formed on the light emitting element, and a region corresponding to the electrode bonding region is removed in a central region of the phosphor film. 8. The method of claim 7,
Wherein the first electrode pad and the second electrode pad are disposed in the electrode bonding region and the height of the upper surface of the first electrode pad and the second electrode pad is lower than the height of the upper surface of the fluorescent film. Preparing a phosphor film disposed on the first sheet;
Cutting between the center region and the edge region of the phosphor film;
Applying an adhesive to the light emitting element disposed on the substrate; And
The phosphor film is disposed on the light emitting device and the edge region is folded so that the central region of the phosphor film is coupled to the upper surface of the light emitting device, And bonding the light emitting device to the light emitting device. 10. The method of claim 9,
Wherein the step of applying the adhesive includes applying a silicone-based adhesive to the upper surface of the light emitting device. 11. The method of claim 10,
And moving the adhesive to a side of the light emitting device. 10. The method of claim 9,
Wherein the cutting step cuts a thickness of 40% to 60% of the phosphor film in a region between the center region and the edge region of the phosphor film. 10. The method of claim 9,
Wherein the cutting step cuts the phosphor film in a direction opposite to that of the first sheet. 10. The method of claim 9,
Further comprising disposing a second sheet on the cut phosphor film,
After the first sheet is removed, the phosphor film is bonded to the light emitting element,
And removing the second sheet from the phosphor film. 10. The method of claim 9,
Wherein the step of preparing the phosphor film comprises preparing a phosphor film having a central region of a quadrangle and an edge region of four quadrangles each connected to four sides of the quadrangle. 11. The method of claim 10,
Wherein an area of one square of the edge region is 10% to 20% of an area of a square of the central region. 10. The method of claim 9,
Wherein the light emitting device is a flip chip light emitting device and the phosphor film is coupled to an upper surface and a side surface of the substrate of the light emitting device. 10. The method of claim 9,
Wherein the light emitting device is a horizontal light emitting device and an electrode bonding region is disposed on an upper surface of the light emitting device and a region corresponding to the electrode bonding region is cut in a central region of the phosphor film. ≪ / RTI > 19. The method of claim 18,
And connecting the electrode bonding region with a wire.

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