KR101762322B1 - Light emitting device package - Google Patents
Light emitting device package Download PDFInfo
- Publication number
- KR101762322B1 KR101762322B1 KR1020100129865A KR20100129865A KR101762322B1 KR 101762322 B1 KR101762322 B1 KR 101762322B1 KR 1020100129865 A KR1020100129865 A KR 1020100129865A KR 20100129865 A KR20100129865 A KR 20100129865A KR 101762322 B1 KR101762322 B1 KR 101762322B1
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- emitting device
- light
- phosphor layer
- electrode layer
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
An embodiment includes a package body including a cavity; A first electrode layer and a second electrode layer formed on a bottom surface of the cavity; A light emitting element mounted on a bottom surface of the cavity and electrically connected to the first electrode layer and the second electrode layer; A molding part surrounding the light emitting device; And a phosphor layer patterned on the surface of the molding part.
Description
Embodiments relate to a light emitting device package and a manufacturing method thereof.
BACKGROUND ART Light emitting devices such as a light emitting diode (LED) or a laser diode (LD) using semiconductor materials of Group 3-5 or 2-6 group semiconductors have been developed with thin film growth technology and device materials, Green, blue, and ultraviolet rays. By using fluorescent materials or combining colors, it is possible to realize white light rays with high efficiency. Also, compared to conventional light sources such as fluorescent lamps and incandescent lamps, low power consumption, It has the advantages of response speed, safety, and environmental friendliness.
Therefore, a transmission module of the optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a white light emitting element capable of replacing a fluorescent lamp or an incandescent lamp Diode lighting, automotive headlights, and traffic lights.
In the light emitting device module, the light emitting device such as the above-described light emitting diode is fixed on a circuit board and supplied with current, and the light emitting device module is used for an illumination device, a display device, etc., Contact properties are particularly important.
The embodiment intends to improve the light efficiency of the light emitting device package.
An embodiment includes a package body including a cavity; A first electrode layer and a second electrode layer formed on a bottom surface of the cavity; A light emitting element mounted on a bottom surface of the cavity and electrically connected to the first electrode layer and the second electrode layer; A molding part surrounding the light emitting device; And a phosphor layer patterned on the surface of the molding part.
Here, the phosphor layer may be formed at 10% to 80% of the surface of the molding portion.
The phosphor layer may be patterned in a stripe shape.
The phosphor layer may be patterned into a plurality of polygonal shapes.
The area of the phosphor layer formed on the light emitting device may be larger than the area of the light emitting device.
The area of the phosphor layer formed on the light emitting element may be larger than the area of the other phosphor layers.
The phosphor layer may be patterned into at least two arcs having different diameters and a predetermined width.
The at least two arcs may have the same center.
The phosphor layer may be patterned in a polygonal or circular shape in a region corresponding to the light emitting device.
Further, the width of the polygonal or circular shape may be wider than the width of the light emitting device.
Another embodiment includes filling a molding material on a package body on which a light emitting device is mounted; And patterning the phosphor layer on a part of the emission area of the light emitted from the light emitting device on the molding material.
Here, the phosphor layer may be patterned at 10% to 80% of the light emitting area.
In the step of patterning the phosphor layer, a phosphor layer material may be applied to the entire surface of the molding part, and a part of the phosphor layer material may be removed using a mask.
Further, in the step of patterning the phosphor, a mask may be placed on the molding part, and the phosphor layer material may be selectively coated.
The light emitting device package according to the embodiment has improved light efficiency.
1 is a sectional view of an embodiment of a light emitting device package,
2 is a schematic view of a conventional light emitting device package,
3 to 7 are plan views of the light emitting device package of FIG. 1,
8A to 8D are views showing an embodiment of a manufacturing process of the light emitting device package of FIG. 1,
9A and 9B are views showing another embodiment of the manufacturing process of the light emitting device package of FIG. 1,
9C and 9D are views showing other embodiments of the light emitting device package,
10 is an exploded perspective view of an embodiment of a lighting apparatus in which a light emitting device package is disposed,
11 is an exploded perspective view of a display device in which a light emitting device package is disposed.
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
In describing the above embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and " under" include both being formed "directly" or "indirectly" In addition, the criteria for above or below each layer will be described with reference to the drawings.
The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.
1 is a cross-sectional view of an embodiment of a light emitting device package.
The light
The
The
The
The
The
The
At this time, when light of a blue wavelength region having a high energy is absorbed into the
That is, the light emitting device package shown in FIG. 2 includes the
The
The
If the arrangement area of the
3 to 7 are plan views of the light emitting device package of Fig.
In FIG. 3, the
Here, the
In this figure, the
The embodiment shown in FIG. 4 is the same as the embodiment shown in FIG. 3 except that the area of the
3 and 4, the phosphor layers 60a and 60b have the same area but may be arranged differently from each other, and the area of the
In the embodiment shown in Fig. 5, the
In the embodiment shown in Fig. 6, the phosphor layer is composed of the
Here, the respective phosphor layers 60b and 60c have the same width, but they can be arranged with different widths. The
In the light emitting device package according to the above-described embodiments, the amount of light reflected from the phosphor layer to the inside is reduced, so that the light efficiency of the entire package can be improved.
8A to 8D are views showing an embodiment of a manufacturing process of the light emitting device package of FIG.
First, the
8C, a material of the
9A and 9B are views showing another embodiment of the manufacturing process of the light emitting device package of FIG.
The process of filling the
9C and 9D are views showing another embodiment of the light emitting device package. Although the light emitting device package in which the horizontal light emitting device is mounted is shown in the above embodiment, the package in which the vertical light emitting device is mounted is shown in Fig. 9C, and the package in which the flip chip emitting device is mounted in Fig. 9D . In FIG. 9C, the vertical
9D, the flip-chip type
The above-described light emitting device package can be mounted on a printed circuit board in a plurality, but the invention is not limited thereto.
Other embodiments may be implemented with an indicator device, an illumination system, including the light emitting device package described in the above embodiments, for example, the illumination system may include a lighting device such as a lamp, a streetlight, Or the like. Here, the light guide plate, the prism sheet, the diffusion sheet, and the like, which are optical members, may be disposed on the light path of the light emitting device package according to the above-described embodiment.
10 is an exploded perspective view of an embodiment of a lighting apparatus in which a light emitting device package is disposed.
The illumination device according to the embodiment includes a
The
A plurality of
The
In addition, a
11 is an exploded perspective view of an embodiment of a display device including a backlight in which a light emitting device package is disposed.
The
The light emitting device module includes the light emitting
The
Here, the
The
In addition, the
In the
Although not shown, a protective sheet may be provided on each of the prism sheets. A protective layer including light diffusing particles and a binder may be provided on both sides of the support film. The prism layer may be formed of a material selected from the group consisting of polyurethane, styrene-butadiene copolymer, polyacrylate, polymethacrylate, polymethylmethacrylate, polyethylene terephthalate elastomer A polymer material selected from the group consisting of polyethyleneterephthalate elastomer, polyisoprene, and poly silicon.
Although not shown, a diffusion sheet may be disposed between the
The support layer is formed by mixing 100 parts by weight of a resin obtained by mixing a methacrylic acid-styrene copolymer and a methyl methacrylate-styrene copolymer with 0.1 to 10 parts by weight of a siloxane-based light diffusing agent having an average particle diameter of 1 to 10 micrometers And 0.1 to 10 parts by weight of an acrylic light-diffusing agent having an average particle diameter of 1 to 10 micrometers.
The first layer and the second layer may contain 0.01 to 1 part by weight of an ultraviolet absorber and 0.001 to 10 parts by weight of an antistatic agent per 100 parts by weight of the methyl methacrylate-styrene copolymer resin.
In the diffusion sheet, the thickness of the supporting layer may be 100 to 10000 micrometers, and the thickness of each layer may be 10 to 1000 micrometers.
In this embodiment, the diffusion sheet, the
A liquid crystal display (LCD) panel may be disposed on the
In the
A liquid crystal display panel used in a display device is an active matrix type, and a transistor is used as a switch for controlling a voltage supplied to each pixel.
A
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
10:
21, 22: first and second electrode layers 30:
35: conductive adhesive layer 40: wire
50: molding
100: light emitting device package 200: mask
400: housing 500:
600: light source 700: holder
800: Display device 810: Bottom cover
820: reflection plate 830: light emitting element module
840:
870: Panel 880: Color filter
Claims (14)
A first electrode layer and a second electrode layer formed on a bottom surface of the cavity;
A light emitting element mounted on a bottom surface of the cavity and electrically connected to the first electrode layer and the second electrode layer;
A molding part surrounding the light emitting device; And
And a plurality of phosphor layers selectively disposed on the surface of the molding portion,
The area of the phosphor layer formed on the light emitting device is larger than the area of the light emitting device and is wider than the area of the other phosphor layer, the upper surface of the molding part is flat and the plurality of phosphor layers are formed on the upper part of the molding part Emitting element package.
Wherein the plurality of phosphor layers are formed at 10% to 80% of the surface area of the molding portion.
And the plurality of phosphor layers are patterned in a stripe shape.
Wherein the plurality of phosphor layers are patterned in a polygonal shape.
And the height of the upper surface of the molding part is equal to the height of the upper surface of the package body.
The height of the upper surface of the plurality of phosphor layers is higher than the height of the upper surface of the package body.
Wherein the plurality of phosphor layers are patterned with at least two arcs having different diameters and a predetermined width.
Wherein the at least two arcs have the same center.
Wherein the plurality of phosphor layers are patterned in a polygonal or circular shape in a region corresponding to the light emitting element.
And the width of the polygonal or circular shape is larger than the width of the light emitting element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100129865A KR101762322B1 (en) | 2010-12-17 | 2010-12-17 | Light emitting device package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100129865A KR101762322B1 (en) | 2010-12-17 | 2010-12-17 | Light emitting device package |
Publications (2)
Publication Number | Publication Date |
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KR20120068297A KR20120068297A (en) | 2012-06-27 |
KR101762322B1 true KR101762322B1 (en) | 2017-07-27 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020100129865A KR101762322B1 (en) | 2010-12-17 | 2010-12-17 | Light emitting device package |
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KR (1) | KR101762322B1 (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008198997A (en) | 2007-01-15 | 2008-08-28 | Sanyo Electric Co Ltd | Semiconductor light-emitting apparatus |
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2010
- 2010-12-17 KR KR1020100129865A patent/KR101762322B1/en active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008198997A (en) | 2007-01-15 | 2008-08-28 | Sanyo Electric Co Ltd | Semiconductor light-emitting apparatus |
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KR20120068297A (en) | 2012-06-27 |
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