KR20150085475A - 질화물 반도체 소자 및 질화물 반도체 웨이퍼 - Google Patents

질화물 반도체 소자 및 질화물 반도체 웨이퍼 Download PDF

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KR20150085475A
KR20150085475A KR1020150004085A KR20150004085A KR20150085475A KR 20150085475 A KR20150085475 A KR 20150085475A KR 1020150004085 A KR1020150004085 A KR 1020150004085A KR 20150004085 A KR20150004085 A KR 20150004085A KR 20150085475 A KR20150085475 A KR 20150085475A
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layer
nitride semiconductor
composition
semiconductor device
low
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Korean (ko)
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도시키 히코사카
히사시 요시다
하지메 나고
신야 누노우에
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가부시끼가이샤 도시바
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    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
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    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
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    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
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  • Crystallography & Structural Chemistry (AREA)
KR1020150004085A 2014-01-15 2015-01-12 질화물 반도체 소자 및 질화물 반도체 웨이퍼 Ceased KR20150085475A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-005040 2014-01-15
JP2014005040A JP6302254B2 (ja) 2014-01-15 2014-01-15 窒化物半導体素子、窒化物半導体ウェーハ、及び、窒化物半導体素子の製造方法

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KR20150085475A true KR20150085475A (ko) 2015-07-23

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KR1020150004085A Ceased KR20150085475A (ko) 2014-01-15 2015-01-12 질화물 반도체 소자 및 질화물 반도체 웨이퍼

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US (1) US9391145B2 (enExample)
EP (1) EP2897157A1 (enExample)
JP (1) JP6302254B2 (enExample)
KR (1) KR20150085475A (enExample)
CN (1) CN104779329A (enExample)
TW (1) TW201539739A (enExample)

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GB2552444A (en) * 2016-03-21 2018-01-31 Univ Warwick Heterostructure
US10211297B2 (en) * 2017-05-03 2019-02-19 Globalwafers Co., Ltd. Semiconductor heterostructures and methods for forming same
JP7228176B2 (ja) * 2017-11-10 2023-02-24 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
JP7033498B2 (ja) 2018-05-18 2022-03-10 株式会社東芝 半導体素子及びその製造方法
JP6951301B2 (ja) 2018-07-23 2021-10-20 株式会社東芝 半導体装置及びその製造方法
CN112531015B (zh) * 2020-12-02 2023-09-22 北京大学东莞光电研究院 低损耗氮化镓射频材料外延结构及制备方法
TWI830472B (zh) * 2022-08-18 2024-01-21 環球晶圓股份有限公司 發光元件製造方法
CN115983738B (zh) * 2023-03-21 2023-06-27 广东仁懋电子有限公司 一种用于提升氮化镓制备效率的方法和装置

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US8299451B2 (en) * 2005-11-07 2012-10-30 Showa Denko K.K. Semiconductor light-emitting diode
WO2008024991A2 (en) * 2006-08-24 2008-02-28 Hongxing Jiang Er doped iii-nitride materials and devices synthesized by mocvd
US7825432B2 (en) * 2007-03-09 2010-11-02 Cree, Inc. Nitride semiconductor structures with interlayer structures
US8362503B2 (en) 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
JP5191843B2 (ja) * 2008-09-09 2013-05-08 株式会社東芝 半導体発光素子及びウェーハ
JP2011258843A (ja) 2010-06-10 2011-12-22 Panasonic Corp 窒化物半導体発光素子及びその製造方法
GB2485418B (en) * 2010-11-15 2014-10-01 Dandan Zhu Semiconductor materials
JP5781292B2 (ja) * 2010-11-16 2015-09-16 ローム株式会社 窒化物半導体素子および窒化物半導体パッケージ
US8525194B2 (en) * 2011-05-16 2013-09-03 Kabushiki Kaisha Toshiba Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer
KR101910564B1 (ko) * 2011-06-02 2018-10-22 서울바이오시스 주식회사 스트레인 강화된 웰층을 갖는 발광 다이오드
JP5127978B1 (ja) * 2011-09-08 2013-01-23 株式会社東芝 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の製造方法
JP5117609B1 (ja) 2011-10-11 2013-01-16 株式会社東芝 窒化物半導体ウェーハ、窒化物半導体装置及び窒化物半導体結晶の成長方法
JP5319810B2 (ja) 2012-03-08 2013-10-16 株式会社東芝 窒化物半導体層の製造方法
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JP5421442B1 (ja) * 2012-09-26 2014-02-19 株式会社東芝 窒化物半導体ウェーハ、窒化物半導体素子及び窒化物半導体ウェーハの製造方法
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US9391145B2 (en) 2016-07-12
US20150200255A1 (en) 2015-07-16
EP2897157A1 (en) 2015-07-22
JP2015133443A (ja) 2015-07-23
TW201539739A (zh) 2015-10-16
CN104779329A (zh) 2015-07-15
JP6302254B2 (ja) 2018-03-28

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