KR20150068943A - Laser processing apparatus - Google Patents

Abstract

The purpose of the present invention is to heat surrounding areas of a processing part which conducts CVD processing in an efficient and effective manner while reducing the bending of an object to be processed. In the laser processing apparatus (101) which conducts laser CVD processing, an air heater (165) provides hot wind to areas near a processing part of a panel (131) through a gas window (161). The gas window (161) maintains a CVD space near the processing part as fuel gas atmosphere by discharging fuel gas from a gas suction and discharge unit (164). A cooling air unit (167) provides cooling air to areas around the processing part of the panel (131) through the gas window (161). A laser unit (163) transmits laser light to the processing part through a laser injection observation unit (162) and the gas window (161). The present invention would be applied to a laser repair device.

Description

[0001] LASER PROCESSING APPARATUS [0002]

The present invention relates to a laser processing apparatus, and more particularly to a laser processing apparatus for performing laser CVD (Chemical Vapor Deposition) processing.

Conventionally, a laser processing apparatus for correcting defects in a substrate wiring used in a display panel such as an LCD (Liquid Crystal Display) panel or an organic EL (Electro-Luminescence) panel using a laser CVD (Chemical Vapor Deposition) have.

In a laser processing apparatus using a laser CVD method, a raw material gas is supplied in the vicinity of a portion for correcting a wiring on a substrate to be processed, laser light is irradiated on a quartz portion on the substrate, By depositing the raw material gas as a film on the quartz portion, the wiring on the substrate is modified. However, when the raw material gas is supplied to the surface of the substrate, the raw material gas is recrystallized by the temperature difference between the raw material gas and the substrate even in the portion where the laser beam is not irradiated, , Which degrades the quality of the substrate.

Therefore, in order to prevent the raw material contained in the raw material gas from recrystallizing on the substrate, laser CVD processing (hereinafter simply referred to as CVD processing) is performed in a state where the substrate is warmed to a temperature not lower than a predetermined temperature (for example, about 40 캜) ) Is performed.

As a method of warming the substrate, for example, there is known a method of heating the entire glass table by a transparent film heater attached to the back surface of the glass table on which the substrate is placed.

Further, for example, there is known a method of heating near a machining portion of a substrate by hot air (see, for example, Patent Document 1).

Japanese Patent Application Laid-Open No. 2011-149046

However, when the substrate is heated, the substrate is warped by the thermal expansion, and the position of the processing and the shift of the focus are generated, and the processing quality is deteriorated. Further, when the amount of warping becomes large, it is assumed that the surface of the substrate comes into contact with a part of the laser processing apparatus and is damaged.

SUMMARY OF THE INVENTION The present invention has been made in view of such a situation, and it is intended to heat the vicinity of a machining portion for surely and efficiently performing the CVD machining, and to reduce the warping of the machining object.

A laser machining apparatus according to one aspect of the present invention ejects a raw material gas and a hot air toward a vicinity of a machining part to be machined and ejects a cooling air from the outside toward a periphery in the vicinity of the machining part from a position for ejecting the source gas and hot air At the same time, a supply unit provided with an exhaust port for sucking raw material gas, hot air and cooling air between a position for ejecting the raw material gas and hot air and a position for ejecting the cooling air, and an irradiation means for irradiating laser beam Respectively.

In the laser machining apparatus of one aspect of the present invention, the vicinity of the machining portion is warmed by hot air, the periphery near the machining portion is cooled by the cooling wind, the vicinity of the machining portion is maintained in the atmosphere of the source gas, Light is irradiated to form a thin film on the processed portion.

Therefore, it is possible to heat the vicinity of the machining portion for surely and efficiently performing the CVD machining, and to reduce the warping of the machining object.

This laser processing apparatus is constituted by, for example, a laser repair apparatus. This raw material gas is constituted by, for example, chromium carbonyl gas or the like. This supply unit is constituted by, for example, a gas window or the like. This irradiating means is constituted by, for example, a laser unit for emitting laser light.

The exhaust port is formed so as to surround the position where the raw material gas and the hot air are blown out, and a blowing hole for blowing out the cooling wind can be formed so as to surround the exhaust port.

Thereby, it is possible to more reliably heat the vicinity of the machining portion and cool the periphery in the vicinity of the machining portion.

In this supply unit, a heat insulating layer can be formed between the path through which the raw material gas and hot air pass and the path through which the cooling wind passes.

Thereby, it is possible to prevent the raw material gas and the hot air from being cooled by the cooling wind.

It is possible to form a plurality of protrusions on the mounting surface of the die to be machined to form a gap between the machining object and the mounting surface.

As a result, it is possible to prevent the heat in the vicinity of the machined portion to be machined from being discharged through the die and to prevent the vicinity of the machined portion from being cooled.

A cooling means for cooling the cooling wind can be further provided.

Thus, it is possible to more reliably cool the periphery in the vicinity of the machining portion.

This cooling unit can blow the hot air and the raw material gas from other positions toward the vicinity of the machining part.

This makes it possible to reliably supply the hot air and the raw material gas in the vicinity of the machining area.

In this laser processing apparatus, a first step of heating a portion near a machining portion by hot air for a predetermined time, generating a source gas atmosphere in the vicinity of the machining portion by the source gas, and irradiating the machining portion with laser light, And a second step of cooling the periphery in the vicinity of the machining part by the wind.

Thereby, the atmosphere in the vicinity of the machining portion can be maintained substantially the same, the occurrence of uneven machining can be prevented, and the periphery in the vicinity of the machining portion can be reliably cooled.

According to one aspect of the present invention, it is possible to heat the vicinity of a machining portion for surely and efficiently performing a CVD process, and to reduce the warping of an object to be machined.

Fig. 1 is a perspective view showing an example of the configuration of an appearance of an embodiment of a laser machining apparatus to which the present invention is applied.
2 is a view showing an example of a method of installing and demounting a substrate.
3 is a block diagram showing a configuration example of a machining unit of the laser machining apparatus.
4 is a cross-sectional view of the gas window of the processing unit viewed from the side.
5 is a plan view of the lower surface of the gas window of the processing unit.
6 is a view showing an example of the installation of the substrate.
7 is a flowchart for explaining the laser repair processing executed by the laser processing apparatus.
8 is a block diagram showing a modified example of the machining unit.

Hereinafter, a mode for carrying out the present invention (hereinafter referred to as an embodiment) will be described. The description will be made in the following order.

1. Embodiment

2. Variations

<Embodiment>

[Exemplary Configuration of Laser Processing Apparatus]

1 is a perspective view showing an example of the configuration of an appearance of an embodiment of a laser machining apparatus to which the present invention is applied.

The laser machining apparatus 101 shown in Fig. 1 is a laser repair apparatus for correcting defects of a substrate wiring used in a display panel such as an LCD panel or an organic EL panel. For example, the laser machining apparatus 101 performs a CVD process for forming a pattern in which a substrate is deficient by a ZAP process and a laser CVD process for removing an extra pattern of a substrate by a laser induced plasma. The laser processing apparatus 101 is configured to include a base 111, glass mounts 112a to 112d, rail members 113a and 113b, a column 114 and a head 115. [

Hereinafter, the longitudinal direction of the column 114 is referred to as an x-axis direction or the left-right direction, and the longitudinal direction of the rail members 113a and 113b is referred to as a y-axis direction or forward and backward direction, and a direction perpendicular to the x- Axis direction or a vertical direction.

On both upper left and right ends of the upper surface of the base 111, rail members 113a and 113b are provided. Plate glass mounting bases 112a to 112d whose longitudinal direction coincides with the y-axis direction are installed between the rail member 113a and the rail member 113b at the predetermined intervals on the upper surface of the base 111 .

On the glass pedestals 112a to 112d, as shown in Fig. 2, the substrate 131 to be processed is loaded. At this time, as shown in Fig. 2, for example, by inserting the arm 132 of the autoloader for transporting the substrate 131 into the grooves between the respective glass mounts, the substrate 131 can be easily loaded 112a to 112d, or can be removed from the glass pedestals 112a to 112d.

In addition, a large number of small protrusions made of transparent resin are formed on the mounting surface, which is the upper surface of the glass pedestals 112a to 112d. As will be described later, the protrusions prevent the heat in the vicinity of the processed portion of the substrate 131 from being exhausted on the glass table 112 to prevent the vicinity of the processed portion from getting cold.

Hereinafter, when it is unnecessary to distinguish the glass stacking pads 112a to 112d individually, they are simply referred to as glass stacking pads 112. [

On the upper surfaces of the rail members 113a and 113b, rails extending in the y-axis direction are provided, respectively. A column 114 is provided between the rail member 113a and the rail member 113b and both end portions in the longitudinal direction of the lower surface of the column 114 are fixed to rails on the upper surface of the rail members 113a and 113b Are fitted. It is possible to move the column 114 in the y-axis direction along the rails on the upper surfaces of the rail members 113a and 113b by using an actuator (not shown) or the like.

In addition, a rail is provided on the front and top surfaces of the column 114, and an inverted L-shaped head 115 is fitted to the front and top rails of the column 114. It is possible to move the head 115 in the x-axis direction along the rails on the front surface and the top surface of the column 114 using an actuator (not shown) or the like.

The head 115 is provided with a machining unit 151 to be described later with reference to Fig. More specifically, each part of the processing unit 151 is built in the head 115, or mounted on the lower surface of the head 115. The machining unit 151 can be moved in the z-axis direction by an actuator (not shown) or the like. As described above, by moving the column 114 in the y-axis direction or moving the head 115 in the x-axis direction, the processing unit 151 is moved in the x-axis direction and the y-axis direction It is possible.

3) for controlling the movement of the column 114, the head 115 and the machining unit 151 or for controlling the operation of the machining unit 151 is built in the base 111 have.

Hereinafter, the base 111, the glass table 112, and the rail members 113a and 113b, which do not move in place, are collectively referred to as a fixing portion 101A and a column 114 and a head 115 are collectively referred to as a moving part 101B.

[Configuration example of machining unit]

Fig. 3 is a block diagram showing a configuration example of the machining unit 151. Fig. The processing unit 151 includes a gas window 161, a laser irradiation observation unit 162, a laser unit 163, a gas intake / exhaust unit 164, an air heater 165, an air heater control unit 166, And a supply unit 167.

The gas window 161 is disposed above the substrate 131 mounted on the glass table 112 with a slight gap from the substrate 131. Further, the distance between the gas window 161 and the substrate 131 can be adjusted by moving the machining unit 151 in the z-axis direction. 4 and 5, the gas window 161 is connected to the substrate 131 through the gas inlet / exhaust unit 164 and the source gas and the purge gas supplied from the gas intake / exhaust unit 164 and the hot air supplied from the air heater 165, (Hereinafter referred to as &quot; laser irradiating portion &quot;) where the laser beam is irradiated. Further, the gas window 161 is provided with a suction port for sucking the raw material gas and the purge gas so as not to leak to the outside. The gas window 161 has an inlet for supplying cooling air to the periphery near the laser irradiation portion.

Above the gas window 161, a laser irradiation observation unit 162 is provided. The laser irradiation observation unit 162 includes an attenuator (not shown) for changing the energy of the laser beam, a variable aperture mechanism (not shown) for changing the beam shape of the laser beam, a mechanism for adjusting the focal position by raising and lowering the objective lens (Not shown) and a microscope mechanism (not shown) for observing the vicinity of the laser irradiation part of the substrate 131 and the like.

The laser unit 163 is provided with, for example, a laser light source for emitting laser light for ZAP processing (hereinafter referred to as ZAP laser light) and laser light for CVD processing (hereinafter referred to as CVD laser light) . The laser beam emitted from the laser unit 163 is irradiated to the substrate 131 through the laser irradiation observation unit 162 and the gas window 161. [ As described above, the position of the laser irradiation unit of the substrate 131 can be adjusted by moving the processing unit 151 in the x-axis direction and the y-axis direction in accordance with the movement of the column 114 and the head 115 .

Further, for example, a laser beam having a repetition frequency of 30 Hz and a time width of 20 picoseconds is used as the ZAP laser light at the third harmonic (wavelength 351 nm) of the Nd: YLF laser, and the third A laser beam having a repetition frequency of 4 kHz and a time width of 30 nanoseconds is used as CVD laser light at harmonics (wavelength 349 nm).

The gas intake / exhaust unit 164 is provided with a mechanism for supplying the raw material gas and the purge gas to the gas window 161 at a required timing and for performing the detoxification treatment of the exhaust gas sucked from the gas window 161 . As the raw material gas, for example, chromium carbonyl gas is used. As the purge gas, for example, helium gas or argon gas is used.

The air heater 165 generates hot air of a predetermined temperature (for example, 150 to 300 degrees Celsius) through the gas window 161 on the basis of the control of the air heater control unit 166, In the vicinity of the laser irradiation part.

The air heater control unit 166 controls the timing of blowing the hot air from the air heater 165 and the temperature of the hot air based on the control of the control unit 152. [

The cooling wind supply unit 167 is constituted by, for example, a fan and supplies cooling wind to the gas window 161 at a necessary timing based on the control of the control unit 152 and supplies the cooling wind from the gas window 161 Thereby controlling the timing of jetting the cooling wind.

In addition, the control unit 152 controls the operation of each part of the movable part 101B of the laser machining apparatus 101. [ For example, the control unit 152 controls the movement of the column 114 in the y-axis direction, the movement of the head 115 in the x-axis direction, and the movement of the processing unit 151 in the z-axis direction of the processing unit 151, Control the movement. Further, for example, the control unit 152 controls the illumination of the laser irradiation observation unit 162, the aperture, the attenuation rate of the attenuator, and the like. In addition, for example, the control unit 152 controls energy, repetition frequency, time width (pulse width), and injection timing of the laser light emitted from the laser unit 163. For example, the control unit 152 controls the opening and closing timing of the gas opening / closing valve (not shown) of the gas intake / exhaust unit 164 and the like. Further, for example, the control unit 152 controls the timing of blowing hot air from the air heater 165 and the temperature of the hot air through the air heater control unit 166. Further, for example, the control unit 152 controls the timing of blowing the cooling wind from the gas window 166 through the cooling wind supply unit 167. [

[Configuration example of gas window]

Next, a configuration example of the gas window 161 will be described with reference to Figs. 4 and 5. Fig. Fig. 4 is a cross-sectional view of the gas window 161, and Fig. 5 is a plan view of the lower surface of the gas window 161. Fig. The gas window 161 is constituted by a disk-shaped window port 201 and a disk-shaped window 202.

At the center of the window port 201, a gas introducing space 201A is formed. The gas introducing space 201A has a constant diameter from the lower surface of the window port 201 to a predetermined height and has a diameter tapered from the middle toward the upper surface. A window 202 for introducing the laser beam LB emitted from the objective lens 204 and oscillated by the laser unit 163 is provided on the upper surface of the window port 201 to open the upper end opening of the gas introducing space 201A Respectively.

The purge gas introduction ports 201B-1 and 201B-2 are provided so as to be parallel to the upper surface of the substrate 131 and oppose to each other. The purge gas supplied from the gas intake / exhaust unit 164 is ejected from the side surface of the gas introduction space portion 201A via the purge gas introduction ports 201B-1 and 201B-2, Is prevented from being blurred. The purge gas ejected from the side surface of the gas introduction space portion 201A collides with the two streams just below the window 202 and is directed substantially toward the bottom of the gas introduction space portion 201A, As shown in Fig.

In the region where the diameter of the gas introducing space 201A is constant, a material gas inlet 201C is provided parallel to the surface of the substrate 131. [ The raw material gas supplied from the gas intake / exhaust unit 164 is ejected from the side surface of the gas introduction space portion 201A through the raw material gas inlet 201C, mixed with the flow of the purge gas, The flow is substantially vertically descending. The raw material gas is ejected from the lower end opening of the gas introduction space portion 201A toward the vicinity of the laser irradiation portion and diffused into the CVD space 211 between the window port 201 and the substrate 131. [ This CVD space 211 is in contact with the vicinity of a portion where a thin film is formed on the substrate 131 by the laser irradiation portion of the substrate 131, that is, by the laser beam and the source gas.

The air outlets 201D-1 to 201D-3 are provided around the lower end opening of the gas introduction space portion 201A on the lower surface of the window port 201. [ The hot air supplied from the air heater 165 sprays from the air blowing openings 201D-1 to 201D-3 toward the vicinity of the laser irradiation part and diffuses into the CVD space 211 as indicated by arrow A1 in Fig.

1 to 201D-3 to surround the lower end opening of the gas introducing space portion 201A and the peripheries of the air outlets 201D-1 to 201D-3 on the outer side of the air outlets 201D-1 to 201D-3 on the lower surface of the window port 201, An exhaust port 201E is formed. Further, a ring-shaped exhaust port 201F is formed so as to surround the exhaust port 201E. Most of the purge gas and the raw material gas ejected from the gas introduction space portion 201A and the gas including the hot air blown out from the blowing out ports 201D-1 to 201D-3 are indicated by arrows B1 and B2 And is sucked into the exhaust port 201E, and the rest is sucked into the exhaust port 201F. The gas sucked into the exhaust ports 201E and 201F is sent to the gas intake / exhaust unit 164 from a suction port (not shown) provided in the exhaust ports 201E and 201F.

In this way, a donut-shaped gas curtain shield portion 212 for shielding the CVD space 211 from the outside is formed by sucking the gas including the purge gas, the source gas, and the hot air from the exhaust ports 201E and 201F. The gas curtain shield portion 212 prevents the source gas from leaking to the outside, and the CVD space 211 is maintained in the atmosphere of the source gas. Further, the circular portion P1 (hereinafter referred to as the heating portion P1) of the substrate 131 surrounded by the dotted line near the tuyeres 201D-1 to 201D-3 and near the laser irradiation portion is heated.

A ring-shaped air outlet 201G is formed on the outer side of the air outlet 201F and near the outer periphery of the lower surface of the window port 201 so as to surround the air outlet 201F. Then, as shown by the arrows C1 to C4 in Fig. 4, the cooling wind is blown from the air blowing port 201G toward the periphery of the heating portion P1, and diffuses onto the substrate 131. [ Most of the cooling air flowing in the direction of the CVD space 211 toward the inside of the window port 201 is sucked into the exhaust port 201F as shown by the arrows D1 and D2 in Fig. And sucked into the exhaust port 201E. The cooling wind sucked into the exhaust ports 201E and 201F is sent to the gas intake / exhaust unit 164 from an unillustrated intake port provided in the exhaust ports 201E and 201F.

As a result, the donut-shaped portion P2 (hereinafter referred to as the cooling portion P2) of the substrate 131 surrounded by the dotted line around the heating portion P1 is cooled from the vicinity immediately below the exhaust port 201F.

As described above, by cooling the periphery of the heating portion P1 in the vicinity of the laser irradiation portion heated by the hot air of the substrate 131, it is possible to prevent the heating portion P1 from becoming unnecessarily large. Thus, warpage of the substrate 131 due to thermal expansion can be suppressed, occurrence of a machining position and a focus shift can be prevented, and processing quality can be improved.

Although a detailed position is not shown, a path through which the purge gas, the source gas and the hot air pass (hereinafter referred to as a gas hot air flow path), the cooling wind and the exhaust ports 201E and 201F from the window port 201 A heat insulating layer 203 is formed between a path through which the sucked gas passes (hereinafter referred to as a cooling wind exhaust path). Thereby, it is possible to prevent the purge gas, the source gas, and the hot air from being cooled by the cooling wind.

Further, the gas hot air path side rather than the heat insulating layer 203 of the window port 201 can be heated by a heater (not shown) or the like to a temperature higher than the temperature at which the raw material contained in the raw material gas starts recrystallization Temperature (for example, 65 to 70 DEG C).

[Effect of protrusion of the glass mount 112]

Fig. 6 shows a state in which the substrate 131 is provided on the glass mounting table 112. Fig.

As described above, a plurality of projections are formed on the mounting surface of the glass table 112. Incidentally, only the protruding portions 251-1 to 251-3 are shown in Fig. 6 among the plurality of protruding portions. Hereinafter, when it is not necessary to individually distinguish the protruding portions 251-1 to 251-3, they are simply referred to as protruding portions 251. [

A gap is formed between the substrate 131 and the glass table 112 by supporting the substrate 131 by the protrusions 251. The heat of the substrate 131 heated by the hot air is transferred to the glass table 112 So that the vicinity of the laser irradiation part is prevented from being cooled. As a result, it is possible to reliably prevent recrystallization of the raw material contained in the raw material gas on the substrate 131.

On the other hand, when the substrate 131 is supported by the protrusions 251, the substrate 131 is easily bent by heat rather than being directly placed on the mounting surface of the glass mounting table 112. However, as described above, it is possible to suppress the increase in the warpage of the substrate 131 by supporting the substrate 131 with the protrusion 251 by cooling the vicinity of the laser irradiation part (the heating part P1).

[Repair processing]

Next, the repair processing executed by the laser machining apparatus 101 will be described with reference to the flowchart of Fig. This flowchart also shows the flow of processing from the end of machining of a certain portion of the substrate 131 to the end of machining of the next portion.

In step S1, the cooling wind supply unit 167 starts supply of the cooling wind on the basis of the control of the control unit 152. [ As a result, the blowing of the cooling wind from the blowing port 201G is started, and the portion of the substrate 131 close to the blowing port 201G (the cooling portion P2 in Fig. 4) is cooled.

If the supply of the cooling wind has already been started, the processing of step S1 is skipped. During processing of the substrate 131, the cooling wind is basically ejected from the gas window 161 at all times. That is, in parallel with the steps S2 to S13, a step of cooling the periphery of the substrate 131 in the vicinity of the laser irradiation part is performed.

In step S2, the control unit 152 raises the machining unit 151 in the z-axis direction. For example, when processing the substrate 131, the distance between the substrate 131 and the gas window 161 is set to about 0.5 mm. The control unit 152 controls the machining unit 151 so that the distance between the substrate 131 and the gas window 161 is enlarged to about 2 to 3 mm so as to move the machining unit 151 to the next machining position. up in the z-axis direction.

In step S3, the gas intake / exhaust unit 164 stops the supply of the raw material gas on the basis of the control of the control unit 152. [ When the supply of the raw material gas is already stopped, the process of step S3 is skipped. Further, the supply of the purge gas is continued.

In step S4, the air heater 165 starts supplying hot air on the basis of the control of the control unit 152 and the air heater control unit 166. [ As a result, the blowing of hot air from the air blowing openings 201D-1 to 201D-3 is started and the portion (heating portion P1 in Fig. 4) near the air blowing openings 201D-1 to 201D- do.

In step S5, the laser machining apparatus 101 moves the machining unit 151. That is, the control unit 152 controls the position of the head 115 in the x-axis direction and the position of the column 114 in the y-axis direction, and moves the machining unit 151 to the next machining position.

The control unit 152 moves the processing unit 151 downward in the z-axis direction so that the distance between the substrate 131 and the gas window 161 is as close as 0.5 mm.

In step S7, the control unit 152 sets the supply time of hot air as a timer. That is, the control unit 152 controls the temperature of the region of the processed surface of the substrate 131 including the region in contact with the CVD space 211 by the hot air blown from the tuyeres 201D-1 to 201D- A time required for setting the raw material contained in the gas to be not higher than a temperature at which the raw material is not recrystallized (for example, around 40 占 폚) is set as a timer.

In step S8, the laser machining apparatus 101 starts preparation for machining. For example, based on the control of the control unit 152, the laser irradiation observation unit 162 sets the focal position of the laser beam emitted from the laser unit 163 to the focal point of the objective lens Adjust the position. In addition, the control unit 152 acquires settings relating to the machining conditions input by the user through an input unit (not shown), such as the energy of the laser beam, the value of the attenuation rate of the laser beam by the attenuator, the size of the slit, And controls the laser irradiation observation unit 162 and the laser unit 163. Further, the control unit 152 acquires detailed information of a position to be subjected to CVD processing and ZAP processing, which is input by a user through an input unit (not shown).

In step S9, the air heater 165 stops supplying the hot air at the timing when the timer set in step S7 expires on the basis of the control of the control unit 152 and the air heater control unit 166. [ In this way, by stopping the hot air before the supply of the source gas and not sending the hot air during the supply of the source gas, the atmosphere in the CVD space 211 during processing can be kept substantially the same, and occurrence of machining unevenness can be prevented.

In step S10, the gas intake / exhaust unit 164 starts supply of the raw material gas on the basis of the control of the control unit 152. [ The source gas is ejected from the lower end of the gas introducing space 201A and diffused into the CVD space 211 between the window port 201 and the substrate 131. [

In step S11, the laser processing apparatus 101 performs CVD processing. More specifically, the control unit 152 controls the injection of the laser beam from the laser unit 163 while controlling the position of the head 115 in the x-axis direction and the position of the column 114 in the y-axis direction, A laser beam is irradiated to a portion of the substrate 131 to be subjected to CVD processing. As a result, a thin film of the raw material contained in the raw material gas is formed on the portion of the substrate 131 irradiated with the laser beam, and a new pattern is formed.

In step S12, the gas intake / exhaust unit 164 stops the supply of the raw material gas on the basis of the control of the control unit 152. [

In step S13, the laser machining apparatus 101 performs ZAP processing. More specifically, the control unit 152 controls the injection of the laser beam from the laser unit 163 while controlling the position of the head 115 in the x-axis direction and the position of the column 114 in the y-axis direction, The laser beam is irradiated to the portion of the substrate 131 that is set in the ZAP process. Thereby, the pattern of the portion of the substrate 131 irradiated with the laser beam is removed.

If it is not necessary to perform the ZAP processing, the processing in steps S12 and S13 is skipped. If there still remains a part to be processed, processing is also executed from step S1.

As described above, it is possible to reliably and efficiently heat the vicinity of the portion where the CVD processing of the substrate is performed.

In other words, since the transparent film heater is not used, it is not necessary to repair or replace the transparent film heater by disconnection or the like, so that the cost and labor can be reduced or the operation can be prevented from being stagnated.

In addition, since only the vicinity of the part to be subjected to the CVD process is heated, the energy required for heating can be reduced, and unnecessary parts can be heated, thereby preventing adverse effects caused by heat on surrounding parts and devices.

In addition, the parts for heating the substrate can be downsized, and it is not necessary to replace the parts by the size of the substrate to be processed, so that the cost can be reduced and the maintenance can be easily stored.

Further, if the processing unit 151 is within the moving range, all the portions of the substrate can be heated without fail, and the occurrence of insufficient heating can be prevented.

Further, by cooling the periphery of the substrate 131 in the vicinity of the laser irradiation portion, warping of the substrate 131 can be suppressed. Thereby, the occurrence of the machining position and the focus deviation can be prevented, and the machining quality can be improved. In addition, it is possible to prevent the surface of the substrate 131 from contacting with a part of the laser processing apparatus 101 and damaging it.

<2. Modifications>

In the above description, an example in which hot air of a predetermined temperature or more is supplied from the air heater 165 is shown. However, since the window port 201 is set at a high temperature (65 to 70 degrees Celsius) as described above, the same air as the ambient temperature is supplied from the air heater 165, -1 to 201D-3, hot air is blown from the air blowing openings 201D-1 to 201D-3. It is also possible to heat the substrate 131 by the hot air.

The numbers of the purge gas inlet, the raw material gas inlet, and the air outlet shown in Figs. 4 and 5 are merely examples, and can be increased or decreased as needed.

It is also possible to use, for example, the machining unit 301 shown in Fig. 8 instead of the machining unit 151. Fig.

The machining unit 301 differs from the machining unit 151 of Fig. 3 in that a cooler 311 is provided. The cooling wind cooled by the cooler 311 to a temperature lower than the temperature of the laser processing apparatus 101 is ejected from the gas window 161. [

Thus, the cooling portion P2 (Fig. 4) of the substrate 131 is thermally contracted and the expansion of the heating portion P1 is canceled, so that the warp of the substrate 131 can be further reduced.

The embodiments of the present invention are not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present invention.

101: Laser processing device
112a: to 112d:
113a and 113b:
114: column
115: Head
131: substrate
151: Machining unit
152:
161: Gas window
162: laser irradiation observation unit
163: Laser unit
164: gas intake / exhaust unit
165: Air heater
166: Air heater control unit
167: Cooling air supply unit
201: Windows Port
201A: gas introduction space part
201B-1, 201B-2: Purge gas inlet
201C: feed gas inlet
201D-1 to 201D-3:
201E, 201F: Exhaust air
201G: Tuyere
211: CVD space
212: gas curtain shield portion
301: Machining unit
311: Cooler

Claims (5)

The raw material gas and the hot air are blown toward the vicinity of the machining part to be machined and the cool air is blown out from the outside to the periphery of the machining part from the position where the raw material gas and the hot air are blown out, A supply unit provided with an exhaust port for sucking the raw material gas, the hot air and the cooling air between a position for ejecting the raw material gas and a position for ejecting the cooling air,
And irradiating means for irradiating the machining portion with laser light,
Wherein a heat insulating layer is formed in the supply unit between a path through which the raw material gas and the hot air pass and a path through which the cooling wind passes.
Laser processing apparatus. The method according to claim 1,
Wherein the exhaust port is formed so as to surround a position for ejecting the raw material gas and the hot air,
And a blowing port for blowing out the cooling air is formed so as to surround the exhaust port. 3. The method according to claim 1 or 2,
Wherein a plurality of projections for forming a gap between the object to be processed and the mounting surface are formed on the mounting surface of the die for holding the object to be processed. 3. The method according to claim 1 or 2,
Further comprising cooling means for cooling the cooling wind. 3. The method according to claim 1 or 2,
Wherein the supply unit ejects the hot air and the source gas from different positions toward the vicinity of the machining portion.

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