JP2013181182A - Laser machining apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reliably and efficiently heat a part in a vicinity of a machining part to be subjected to the CVD machining, and to reduce the deflection of an object to be machined.SOLUTION: In a laser machining apparatus 101 for executing the laser CVD machining, an air heater 165 supplies hot air to a vicinity of a machining part of a substrate 131 via a gas window 161. The gas window 161 supplies/exhausts raw material gas from a gas intake/exhaust unit 164 to keep a CVD space in a vicinity of the machining part in an atmosphere of raw material gas. A cooling air unit 167 supplies cooling air to a periphery in a vicinity of the machining part of the substrate 131 via the gas window 161. A laser unit 163 applies laser beam to the machining part via a laser beam application observation unit 162 and the gas window 161. The present invention is applicable to, for example, a laser repair device.

Description

  The present invention relates to a laser processing apparatus, and more particularly to a laser processing apparatus that performs laser CVD (Chemical Vapor Deposition) processing.

  Conventionally, there has been a laser processing apparatus that uses a laser CVD (Chemical Vapor Deposition) method to correct defects in wiring of substrates used in display panels such as LCD (Liquid Crystal Display) panels and organic EL (Electro-Luminescence) panels. It is popular.

  In a laser processing apparatus using the laser CVD method, a source gas is supplied in the vicinity of a portion where wiring on a substrate to be processed is corrected, and the correction portion on the substrate is irradiated with laser light. The wiring on the substrate is corrected by depositing the activated source gas as a film on the correction portion. However, when the source gas is supplied to the substrate surface, the source gas is recrystallized due to the temperature difference between the source gas and the substrate even in the portion where the laser beam is not irradiated, and the foreign matter generated by the recrystallization is not It becomes a defective part, which degrades the quality of the substrate.

  Therefore, in order to prevent the source material contained in the source gas from being recrystallized on the substrate, laser CVD processing (hereinafter simply referred to as CVD processing) is performed with the substrate heated above a predetermined temperature (for example, around 40 ° C.). Also referred to as).

  As a method for heating the substrate, for example, a method is known in which the entire glass mounting table is heated by a transparent film heater attached to the back surface of the glass mounting table on which the substrate is mounted.

  In addition, for example, a method of heating the vicinity of a processed portion of a substrate with hot air is known (see, for example, Patent Document 1).

JP 2011-149046 A

  However, when the substrate is heated, it is assumed that the substrate is bent due to thermal expansion, a processing position or a focus shift occurs, and processing quality deteriorates. Moreover, when the amount of bending increases, it is assumed that the surface of the substrate comes into contact with a part of the laser processing apparatus and is damaged.

  The present invention has been made in view of such a situation, and is intended to heat the vicinity of a processing portion where CVD processing is performed reliably and efficiently, and to reduce the bending of a processing target.

  The laser processing apparatus according to one aspect of the present invention blows the raw material gas and hot air toward the vicinity of the processing portion to be processed, and blows out cooling air from the outside from the position where the raw material gas and hot air are blown toward the vicinity of the processing portion. A supply unit provided with an exhaust port for sucking the raw material gas, hot air, and cooling air between the position where the raw material gas and hot air are blown out and the position where the cooling air is blown out, and the processing portion is irradiated with laser light Irradiation means.

  In the laser processing apparatus according to one aspect of the present invention, the vicinity of the processing portion is warmed by the hot air, the vicinity of the processing portion is cooled by the cooling air, the vicinity of the processing portion is maintained in the source gas atmosphere, and the laser beam is emitted to the processing portion. Irradiated to form a thin film on the processed part.

  Accordingly, it is possible to heat the vicinity of the processing portion where the CVD processing is performed reliably and efficiently, and to reduce the bending of the processing target.

  This laser processing apparatus is constituted by, for example, a laser repair apparatus. This source gas is composed of, for example, chromium carbonyl gas. This supply unit is constituted by, for example, a gas window. This irradiation means is comprised by the laser unit which inject | emits a laser beam, for example.

  The exhaust port can be formed so as to surround the position where the source gas and hot air are blown out, and the blower port where the cooling air is blown out can be formed so as to surround the exhaust port.

  As a result, the vicinity of the processing portion can be heated more reliably and the vicinity of the processing portion can be cooled.

  In this supply unit, a heat insulating layer can be provided between the path through which the source gas and hot air pass and the path through which cooling air passes.

  Thereby, it can prevent that source gas and a hot air are cooled with a cooling air.

  A plurality of protrusions for forming a gap between the processing object and the installation surface can be provided on the installation surface of the table on which the processing object is placed.

  Thereby, it is possible to prevent the heat in the vicinity of the processing portion to be processed from being transmitted through the table and cooling the vicinity of the processing portion.

  A cooling means for cooling the cooling air can be further provided.

  Thereby, the periphery of the processing part vicinity can be cooled more reliably.

  This cooling unit can blow hot air and source gas from different positions toward the vicinity of the processing portion.

  Thereby, a hot air and source gas can be reliably supplied to the process part vicinity.

  In this laser processing apparatus, after heating the vicinity of the processing portion with hot air for a predetermined time, a source gas atmosphere is generated in the vicinity of the processing portion with the source gas, and the processing portion is irradiated with laser light; Thus, it is possible to further provide a control means for performing control in parallel with the second step of cooling the vicinity in the vicinity of the processed portion.

  Thereby, the atmosphere in the vicinity of the processed portion can be kept substantially the same, the occurrence of processing unevenness can be prevented, and the periphery in the vicinity of the processed portion can be reliably cooled.

  According to one aspect of the present invention, it is possible to heat the vicinity of a processing portion where CVD processing is performed reliably and efficiently, and to reduce the bending of a processing target.

It is a perspective view which shows the structural example of the external appearance of one Embodiment of the laser processing apparatus to which this invention is applied. It is a figure which shows the example of the installation and removal method of a board | substrate. It is a block diagram which shows the structural example of the processing unit of a laser processing apparatus. It is sectional drawing which looked at the gas window of the processing unit from the side. It is a top view of the lower surface of the gas window of a processing unit. It is a figure which shows the example of installation of a board | substrate. It is a flowchart for demonstrating the laser repair process performed by a laser processing apparatus. It is a block diagram which shows the modification of a process unit.

Hereinafter, modes for carrying out the present invention (hereinafter referred to as embodiments) will be described. The description will be given in the following order.
1. Embodiment 2. FIG. Modified example

<Embodiment>
[Configuration example of laser processing equipment]
FIG. 1 is a perspective view showing an external configuration example of an embodiment of a laser processing apparatus to which the present invention is applied.

  A laser processing apparatus 101 in FIG. 1 is a laser repair apparatus that corrects defects in wiring of a substrate used in a display panel such as an LCD panel or an organic EL panel. For example, the laser processing apparatus 101 performs ZAP processing for removing an excess pattern on a substrate by laser-induced plasma, and CVD processing for forming a missing pattern on a substrate by a laser CVD method. The laser processing apparatus 101 is configured to include a base 111, glass mounts 112a to 112d, rail members 113a and 113b, a column 114, and a head 115.

  Hereinafter, the longitudinal direction of the column 114 is referred to as the x-axis direction or the left-right direction, the longitudinal direction of the rail members 113a and 113b is referred to as the y-axis direction or the front-rear direction, and the direction perpendicular to the x-axis and the y-axis is the z-axis direction. Or it is called the up-down direction.

  Rail members 113a and 113b are provided at both left and right ends of the upper surface of the base 111. Further, between the rail member 113a and the rail member 113b, plate-like glass mounts 112a to 112d whose longitudinal direction coincides with the y-axis direction are provided on the upper surface of the base 111 at a predetermined interval.

  As shown in FIG. 2, a substrate 131 to be processed is placed on the glass platforms 112a to 112d. At this time, as shown in FIG. 2, for example, by inserting an arm 132 of an autoloader that transports the substrate 131 into a groove between the glass mounts, the substrate 131 can be easily attached to the glass mounts 112 a to 112 a. It can be installed at 112d or removed from the glass stage 112a to 112d.

  In addition, a large number of small protrusions made of a transparent resin are provided on the installation surface, which is the upper surface of the glass platforms 112a to 112d. As will be described later, the projections prevent the heat in the vicinity of the processed portion of the substrate 131 from escaping through the glass table 112 and cooling the vicinity of the processed portion.

  Hereinafter, when it is not necessary to individually distinguish the glass mounting tables 112a to 112d, they are simply referred to as a glass mounting table 112.

  Rails extending in the y-axis direction are provided on the upper surfaces of the rail members 113a and 113b. Further, a column 114 is suspended between the rail member 113a and the rail member 113b, and both ends in the longitudinal direction of the lower surface of the column 114 are fitted to the rails on the upper surfaces of the rail members 113a and 113b. Then, the column 114 can be moved in the y-axis direction according to the rails on the upper surfaces of the rail members 113a and 113b using an actuator (not shown).

  Further, rails are provided on the front surface and the upper surface of the column 114, and an inverted L-shaped head 115 is fitted to the rails on the front surface and the upper surface of the column 114. Then, it is possible to move the head 115 in the x-axis direction according to the rails on the front surface and the upper surface of the column 114 using an actuator (not shown).

  The head 115 is provided with a processing unit 151 described later with reference to FIG. More specifically, each part of the processing unit 151 is built in the head 115 or attached to the lower surface of the head 115. The processing unit 151 can be moved in the z-axis direction by an actuator (not shown) or the like. Further, as described above, the machining unit 151 can be moved in the x-axis direction and the y-axis direction by moving the column 114 in the y-axis direction or moving the head 115 in the x-axis direction. is there.

  Further, the base 111 incorporates a control unit 152 (FIG. 3) that controls the movement of the column 114, the head 115, and the machining unit 151 and controls the operation of the machining unit 151.

  Hereinafter, the base 111 that does not move the place, the glass mounting table 112, and the rail members 113a and 113b are collectively referred to as a fixed portion 101A, and the column 114 that moves the place and the head 115 are collectively referred to as a movable portion 101B. .

[Example of processing unit configuration]
FIG. 3 is a block diagram illustrating a configuration example of the processing unit 151. The processing unit 151 is configured to include a gas window 161, a laser irradiation observation unit 162, a laser unit 163, a gas intake / exhaust unit 164, an air heater 165, an air heater control unit 166, and a cooling air supply unit 167.

  The gas window 161 is disposed above the substrate 131 placed on the glass stage 112 with a slight gap from the substrate 131. Note that the distance between the gas window 161 and the substrate 131 can be adjusted by moving the processing unit 151 in the z-axis direction. Although details will be described later with reference to FIG. 4 and FIG. 5, the gas window 161 converts the source gas and the purge gas supplied from the gas intake / exhaust unit 164 and the hot air supplied from the air heater 165 into the laser beam of the substrate 131. Has an inlet to be supplied in the vicinity of a portion (hereinafter referred to as a laser irradiator) to be irradiated. The gas window 161 has a suction port for sucking the raw material gas and the purge gas so as not to leak outside. Furthermore, the gas window 161 has an inlet for supplying cooling air to the vicinity in the vicinity of the laser irradiation unit.

A laser irradiation observation unit 162 is installed immediately above the gas window 161.
The laser irradiation observation unit 162 includes an attenuator (not shown) that changes the energy of the laser beam, a variable aperture mechanism (not shown) that changes the beam shape of the laser beam, and a mechanism (not shown) that moves the objective lens up and down to adjust the focal position. ) And a microscope mechanism (not shown) for observing the vicinity of the laser irradiation portion of the substrate 131.

  The laser unit 163 includes, for example, laser light sources that emit laser light for ZAP processing (hereinafter referred to as ZAP laser light) and laser light for CVD processing (hereinafter referred to as CVD laser light). . The laser light emitted from the laser unit 163 is irradiated onto the substrate 131 via the laser irradiation observation unit 162 and the gas window 161. As described above, the position of the laser irradiation portion of the substrate 131 can be adjusted by moving the processing unit 151 in the x-axis direction and the y-axis direction in accordance with the movement of the column 114 and the head 115.

  For example, a laser beam having the third harmonic (wavelength 351 nm) of the Nd: YLF laser, a repetition frequency of 30 Hz, and a time width of 20 picoseconds is used as the ZAP laser beam, and the third harmonic of the Nd: YLF laser. A laser beam having a wave (wavelength 349 nm), a repetition frequency of 4 kHz, and a time width of 30 nanoseconds is used as a CVD laser beam.

  The gas intake / exhaust unit 164 includes a mechanism that supplies the source gas and the purge gas to the gas window 161 at a necessary timing, and performs a detoxification process of the exhaust gas sucked from the gas window 161. For example, chromium carbonyl gas is used as the source gas, and helium gas or argon gas is used as the purge gas, for example.

  The air heater 165 supplies hot air having a predetermined temperature (for example, 150 to 300 ° C.) to the vicinity of the laser irradiation unit of the substrate 131 through the gas window 161 at a necessary timing under the control of the air heater control unit 166. .

  The air heater control unit 166 controls the timing of blowing hot air from the air heater 165 and the temperature of the hot air based on the control of the control unit 152.

  The cooling air supply unit 167 is composed of, for example, a fan or the like, and supplies cooling air to the gas window 161 at a necessary timing based on the control of the control unit 152 and controls the timing of blowing the cooling air from the gas window 161. .

  The control unit 152 controls the operation of each unit of the movable unit 101B of the laser processing apparatus 101. For example, the control unit 152 controls movement of the column 114 in the y-axis direction, movement of the head 115 in the x-axis direction, and movement of the machining unit 151 in the z-axis direction via an actuator (not shown). Further, for example, the control unit 152 controls the illumination of the laser irradiation observation unit 162, the aperture, the attenuation factor of the attenuator, and the like. Further, for example, the control unit 152 controls the energy of the laser light emitted from the laser unit 163, the repetition frequency, the time width (pulse width), the emission timing, and the like. Further, for example, the control unit 152 controls the opening / closing timing of a gas opening / closing valve (not shown) of the gas intake / exhaust unit 164. Further, for example, the control unit 152 controls the timing of blowing hot air from the air heater 165, the temperature of the hot air, and the like via the air heater control unit 166. Further, for example, the control unit 152 controls the timing of blowing the cooling air from the gas window 166 via the cooling air supply unit 167.

[Configuration example of gas window]
Next, a configuration example of the gas window 161 will be described with reference to FIGS. 4 and 5.
4 is a cross-sectional view of the gas window 161 as viewed from the side, and FIG. 5 is a plan view of the lower surface of the gas window 161. The gas window 161 includes a disk-shaped window port 201 and a disk-shaped window 202.

  A gas introduction space 201 </ b> A is formed at the center of the window port 201. The diameter of the gas introduction space 201A is constant from the lower surface of the window port 201 to a predetermined height, and the diameter increases in a tapered shape from the middle toward the upper surface. A window 202 for introducing the laser beam LB oscillated by the laser unit 163 and emitted from the objective lens 204 is provided on the upper surface of the window port 201 so as to cover the opening at the upper end of the gas introduction space 201A. ing.

  Immediately below the window 202, purge gas inlets 201 </ b> B- 1 and 201 </ b> B- 2 are provided in parallel to the upper surface of the substrate 131 and facing each other. The purge gas supplied from the gas intake / exhaust unit 164 blows out from the side surface of the gas introduction space 201A via the purge gas introduction ports 201B-1 and 201B-2, and the purge gas prevents the window 202 from being fogged. Further, the purge gas blown out from the side surface of the gas introduction space 201 </ b> A collides with two flows immediately below the window 202, and descends perpendicularly to the surface of the substrate 131 toward the bottom of the gas introduction space 201 </ b> A.

  In a region where the diameter of the gas introduction space 201A is constant, a source gas introduction port 201C is provided in parallel to the surface of the substrate 131. The source gas supplied from the gas intake / exhaust unit 164 is blown from the side surface of the gas introduction space 201A through the source gas introduction port 201C, mixed with the flow of the purge gas, and descending substantially vertically to the upper surface of the substrate 131. It becomes. The source gas is blown out from the opening at the lower end of the gas introduction space 201 </ b> A toward the vicinity of the laser irradiation unit and diffuses into the CVD space 211 between the window port 201 and the substrate 131. The CVD space 211 is in contact with the vicinity of the laser irradiation portion of the substrate 131, that is, the vicinity of the portion where the thin film is formed on the substrate 131 by the laser beam and the source gas.

  Blower ports 201D-1 to 201D-3 are provided around the opening at the lower end of the gas introduction space 201A on the lower surface of the window port 201. The hot air supplied from the air heater 165 is blown out from the blower openings 201D-1 to 201D-3 toward the vicinity of the laser irradiation unit and diffused into the CVD space 211 as indicated by an arrow A1 in FIG.

  A ring-shaped exhaust port is provided outside the blower ports 201D-1 to 201D-3 on the lower surface of the window port 201 so as to surround the opening at the lower end of the gas introduction space 201A and the periphery of the blower ports 201D-1 to 201D-3. 201E is formed. Further, a ring-shaped exhaust port 201F is formed so as to surround the exhaust port 201E. Then, most of the gas including the purge gas and the raw material gas blown out from the gas introduction space 201A and the hot air blown out from the blower ports 201D-1 to 201D-3 is indicated by arrows B1 and B2 in FIG. Then, the air is sucked into the exhaust port 201E, and the rest is sucked into the exhaust port 201F. The gas sucked into the exhaust ports 201E and 201F is sent to the gas intake / exhaust unit 164 from suction ports (not shown) provided in the exhaust ports 201E and 201F.

  In this way, the doughnut-shaped gas curtain shield portion 212 that blocks the CVD space 211 from the outside is formed by sucking the gas including the purge gas, the source gas, and the hot air from the exhaust ports 201E and 201F. The gas curtain shield part 212 prevents the source gas from leaking outside, and the CVD space 211 is maintained in the source gas atmosphere. In addition, a circular portion P1 (hereinafter referred to as a heating portion P1) of the substrate 131 that is close to the blower openings 201D-1 to 201D-3 and surrounded by a dotted line near the laser irradiation unit is heated.

  Further, a ring-shaped air blowing port 201G is formed near the outer periphery of the lower surface of the window port 201 so as to surround the exhaust port 201F further outside the exhaust port 201F. Then, as indicated by arrows C1 to C4 in FIG. 4, cooling air blows out from the air blowing port 201G toward the periphery of the heating portion P1, and diffuses on the substrate 131. Among them, most of the cooling air that proceeds in the direction of the CVD space 211 toward the inside of the window port 201 is sucked into the exhaust port 201F and the rest is sucked into the exhaust port 201E, as indicated by arrows D1 and D2 in FIG. It is. The cooling air sucked into the exhaust ports 201E and 201F is sent to the gas intake / exhaust unit 164 from a suction port (not shown) provided in the exhaust ports 201E and 201F.

  As a result, the doughnut-shaped portion P2 (hereinafter referred to as the cooling portion P2) of the substrate 131 surrounded by the dotted line around the heating portion P1 outside the vicinity immediately below the exhaust port 201F is cooled.

  Thus, by cooling the periphery of the heated portion P1 in the vicinity of the laser irradiation portion heated by the hot air of the substrate 131, it is possible to prevent the heated portion P1 from becoming larger than necessary. Thereby, the bending of the board | substrate 131 by thermal expansion can be suppressed, generation | occurrence | production of the shift | offset | difference of a processing position or a focus can be prevented, and processing quality can be improved.

  Further, although the detailed position is not shown in the figure, a path through which purge gas, source gas, and hot air pass (hereinafter referred to as gas hot air path) and cooling air and exhaust ports 201E and 201F are sucked in the window port 201. The heat insulating layer 203 is provided between the paths through which the gas flows (hereinafter referred to as cooling air exhaust paths). Thereby, it is possible to prevent the purge gas, the source gas, and the hot air from being cooled by the cooling air.

  Note that the gas hot air path side of the heat insulating layer 203 of the window port 201 is higher than the temperature at which the source material contained in the source gas starts recrystallization by a heater (not shown) based on the control of the control unit 152 (for example, 65 to 70 ° C.).

[Effect of protrusion of glass mounting table 112]
FIG. 6 shows a state where the substrate 131 is installed on the glass table 112.

  As described above, a large number of protrusions are provided on the installation surface of the glass mounting table 112. Incidentally, FIG. 6 shows only the protrusions 251-1 to 251-3 among the many protrusions. Hereinafter, the protrusions 251-1 to 251-3 are simply referred to as the protrusions 251 when it is not necessary to distinguish them individually.

  By supporting the substrate 131 by the protrusions 251, a gap is formed between the substrate 131 and the glass mounting table 112, and the heat of the substrate 131 heated by the hot air travels through the glass mounting table 112 and escapes. The vicinity of the irradiation unit is prevented from being cooled. As a result, the source material contained in the source gas can be more reliably prevented from recrystallizing on the substrate 131.

  On the other hand, by supporting the substrate 131 with the protrusions 251, the substrate 131 is easily bent by heat, rather than being placed directly on the installation surface of the glass stage 112. However, as described above, by cooling the vicinity of the laser irradiation portion (heating portion P1), it is possible to suppress an increase in the bending of the substrate 131 due to the substrate 131 being supported by the protrusions 251.

[Repair processing]
Next, the repair process executed by the laser processing apparatus 101 will be described with reference to the flowchart of FIG. This flowchart shows the flow of processing from the end of processing of a certain portion of the substrate 131 to the end of processing of the next portion.

  In step S <b> 1, the cooling air supply unit 167 starts supplying cooling air based on the control of the control unit 152. Thereby, the blowing of cooling air is started from the air blowing port 201G, and the portion (cooling portion P2 in FIG. 4) of the substrate 131 close to the air blowing port 201G is cooled.

  If the supply of cooling air has already been started, the process of step S1 is skipped. Further, during the processing of the substrate 131, cooling air is basically blown out from the gas window 161 at all times. That is, in parallel with the steps S2 to S13, a step of cooling the vicinity of the laser irradiation portion vicinity of the substrate 131 is performed.

  In step S2, the control unit 152 raises the machining unit 151 in the z-axis direction. For example, when processing the substrate 131, the distance between the substrate 131 and the gas window 161 is set to about 0.5 mm. Then, in order to move the processing unit 151 to the next processing position, the control unit 152 moves the processing unit 151 in the z-axis direction so that the distance between the substrate 131 and the gas window 161 is increased to about 2 to 3 mm. Raise.

  In step S <b> 3, the gas intake / exhaust unit 164 stops the supply of the source gas based on the control of the control unit 152. If the supply of the source gas has already been stopped, the process of step S3 is skipped. Note that the supply of the purge gas is continued.

  In step S <b> 4, the air heater 165 starts supplying hot air based on the control of the control unit 152 and the air heater control unit 166. Thereby, the blowing of hot air from the air blowing ports 201D-1 to 201D-3 is started, and the portion (heating portion P1 in FIG. 4) of the substrate 131 close to the air blowing ports 201D-1 to 201D-3 is heated.

  In step S5, the laser processing apparatus 101 moves the processing unit 151. That is, the control unit 152 controls the position of the head 115 in the x-axis direction and the position of the column 114 in the y-axis direction, and moves the machining unit 151 to the next machining position.

  In step S6, the control unit 152 lowers the processing unit 151 in the z-axis direction so that the distance between the substrate 131 and the gas window 161 approaches about 0.5 mm.

  In step S7, the control unit 152 sets the hot air supply time in the timer. That is, the control unit 152 uses the hot air blown from the blower ports 201D-1 to 201D-3 to change the temperature of the region of the processing surface of the substrate 131 including the region in contact with the CVD space 211 into the source gas included in the source gas. A timer is set to a time necessary for the temperature to be higher than the temperature at which the substance does not recrystallize (for example, around 40 ° C.).

  In step S8, the laser processing apparatus 101 starts processing preparation. For example, the laser irradiation observation unit 162 adjusts the focal position of the objective lens so that the focal position of the laser light emitted from the laser unit 163 matches the processed surface of the substrate 131 under the control of the control unit 152. Further, the control unit 152 acquires settings relating to processing conditions input by the user via an input unit (not shown) such as the energy of the laser beam, the value of the attenuation factor of the laser beam by the attenuator, and the size of the slit. Based on the setting, the laser irradiation observation unit 162 and the laser unit 163 are controlled. Furthermore, the control unit 152 acquires detailed information on the position where the CVD process and the ZAP process are performed, which is input by the user via an input unit (not shown).

  In step S9, the air heater 165 stops the supply of hot air when the timer set in step S7 expires under the control of the control unit 152 and the air heater control unit 166. Thus, by stopping the hot air before supplying the source gas and not sending the hot air during the source gas supply, the atmosphere in the CVD space 211 during processing can be kept substantially the same, and processing unevenness Can be prevented.

  In step S <b> 10, the gas intake / exhaust unit 164 starts the supply of the source gas under the control of the control unit 152. As a result, the source gas blows out from the lower end of the gas introduction space 201 </ b> A and diffuses into the CVD space 211 between the window port 201 and the substrate 131.

  In step S11, the laser processing apparatus 101 performs CVD processing. Specifically, the control unit 152 controls the emission of the laser light from the laser unit 163 while controlling the position of the head 115 in the x-axis direction and the position of the column 114 in the y-axis direction, and is set in step S8. A portion of the substrate 131 to be subjected to CVD processing is irradiated with laser light. As a result, a thin film made of the source material contained in the source gas is formed on the portion of the substrate 131 irradiated with the laser beam, and a new pattern is formed.

  In step S <b> 12, the gas intake / exhaust unit 164 stops the supply of the source gas based on the control of the control unit 152.

  In step S13, the laser processing apparatus 101 performs ZAP processing. Specifically, the control unit 152 controls the emission of the laser light from the laser unit 163 while controlling the position of the head 115 in the x-axis direction and the position of the column 114 in the y-axis direction, and is set in step S8. A portion of the substrate 131 to be ZAP processed is irradiated with laser light. As a result, the pattern of the portion of the substrate 131 irradiated with the laser light is removed.

  In addition, when it is not necessary to perform ZAP processing, the process of step S12 and step S13 is skipped. If there is still a part to be processed, the process is executed again from step S1.

  As described above, the vicinity of the portion where the substrate is subjected to CVD processing can be reliably and efficiently heated.

  That is, since the transparent film heater is not used, it is not necessary to repair or replace the transparent film heater due to disconnection or the like, and it is possible to reduce the cost and time required for it or prevent the stagnation of work.

  In addition, since only the vicinity of the portion to be subjected to CVD processing is heated, energy required for heating can be reduced, and heating of unnecessary portions can prevent peripheral components and equipment from being adversely affected by heat.

  Furthermore, it is possible to reduce the size of components for heating the substrate, and it is not necessary to replace the component depending on the size of the substrate to be processed, thereby reducing costs and facilitating storage of maintenance products.

  Moreover, as long as it is within the movement range of the processing unit 151, all portions of the substrate can be heated without omission, and the occurrence of insufficient heating can be prevented.

  Further, by cooling the periphery of the substrate 131 in the vicinity of the laser irradiation portion, the bending of the substrate 131 can be suppressed. As a result, it is possible to prevent the processing position and focus from being shifted and improve the processing quality. Further, it is possible to prevent the surface of the substrate 131 from being in contact with a part of the laser processing apparatus 101 and being damaged.

<2. Modification>
In the above description, the example which supplies the hot air more than predetermined temperature from the air heater 165 was shown.
However, since the window port 201 is set to a high temperature (65 to 70 ° C.) as described above, the same air as the ambient temperature is supplied from the air heater 165 and the air outlets 201D-1 to 201D− of the window port 201 are supplied. Only by blowing from 3, hot air comes to blow out from the blower openings 201D-1 to 201D-3. It is also possible to heat the substrate 131 with the hot air.

  The numbers of purge gas inlets, source gas inlets, and air outlets shown in FIG. 4 and FIG. 5 are examples, and can be increased or decreased as necessary.

  Furthermore, for example, instead of the processing unit 151, the processing unit 301 shown in FIG. 8 can be used.

  The processing unit 301 is different from the processing unit 151 of FIG. 3 in that a cooler 311 is provided. Then, the cooling air cooled by the cooler 311 to a temperature lower than the peripheral temperature of the laser processing apparatus 101 is blown out from the gas window 161.

  Thereby, the cooling portion P2 (FIG. 4) of the substrate 131 is thermally contracted, and the expansion of the heating portion P1 is cancelled, so that the bending of the substrate 131 can be further reduced.

  The embodiment of the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention.

DESCRIPTION OF SYMBOLS 101 Laser processing apparatus 112a thru | or 112d Glass mounting base 113a, 113b Rail member 114 Column 115 Head 131 Substrate 151 Processing unit 152 Control part 161 Gas window 162 Laser irradiation observation unit 163 Laser unit 164 Gas intake / exhaust unit 165 Air heater 166 Air heater control unit 167 Cooling air supply unit 201 Window port 201A Gas introduction space 201B-1, 201B-2 Purge gas introduction port 201C Raw material gas introduction port 201D-1 to 201D-3 Blower port 201E, 201F Exhaust port 201G Blower port 211 CVD space 212 Gas Curtain shield part 301 Processing unit 311 Cooler

Claims (7)

The raw material gas and hot air are blown out toward the vicinity of the processing portion to be processed, the cooling air is blown out from the outside of the position where the raw material gas and the hot air are blown out toward the vicinity of the processing portion, and the raw material gas and the hot air are blown out. A supply unit provided with an exhaust port for sucking the source gas, the hot air, and the cooling air between a position of blowing out and a position of blowing out the cooling air;
Irradiating means for irradiating the processed portion with laser light. The exhaust port is formed so as to surround a position where the source gas and the hot air are blown out,
The laser processing apparatus according to claim 1, wherein the air blowing port that blows out the cooling air is formed so as to surround the exhaust port. The laser processing apparatus according to claim 1, wherein a heat insulating layer is provided in the supply unit between a path through which the source gas and the hot air pass and a path through which the cooling air passes. The plurality of protrusions for forming a gap between the processing object and the installation surface are provided on the installation surface of the table on which the processing object is placed. Laser processing equipment. The laser processing apparatus according to any one of claims 1 to 4, further comprising a cooling unit for cooling the cooling air. The laser processing apparatus according to claim 1, wherein the cooling unit blows out the hot air and the source gas from different positions toward the vicinity of the processing portion. A first step of heating the vicinity of the processing portion with the hot air for a predetermined time, generating a source gas atmosphere in the vicinity of the processing portion with the source gas, and irradiating the processing portion with laser light; and The laser processing apparatus according to claim 1, further comprising a control unit configured to perform control so as to perform in parallel with the second step of cooling the vicinity of the vicinity of the processing portion.

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