TW201347890A - Laser processing device - Google Patents

Abstract

The present invention is provided to certainly and effectively heat the vicinity of a processed portion where a CVD process is performed and to reduce curvature of a processed object. In a laser processing device 101 for performing a laser CVD process, a air heater 165 supplies a hot blast to the vicinity of a processed portion of a substrate 13 1 through a gas window 161. The gas window 161 keeps a CVD space of the vicinity of the processed portion in an atmosphere of raw gas by supplying and exhausting the raw gas from a gas sucking and exhausting unit 164. A cool blast unit 167 supplies a cool blast to the periphery of the vicinity of the processed portion of the substrate 131 through the gas window 161. A laser unit 163 irradiates the processed portion with a laser beam through a laser irradiation and observation unit 162 and the gas window 161. The present invention is suitable for, for example, a laser repair device.

Description

Laser processing device

The present invention relates to a laser processing apparatus, and more particularly to a laser processing apparatus for performing laser CVD (Chemical Vapor Deposition) processing.

In the past, the CVD (Chemical Vapor Deposition) method was used to correct the defects of the wiring of the substrate used in the display panel such as an LCD (Liquid Crystal Display) panel or an organic EL (Electro-Luminescence) panel. Laser processing equipment is gaining popularity.

In a laser processing apparatus using a laser CVD method, a raw material gas is supplied to a portion of a close-up for correcting wiring on a substrate to be processed, and a correction portion for irradiating laser light on the substrate is to be used by Ray The material gas activated by the energy of the light is formed as a film and deposited on the correction portion, thereby correcting the wiring on the substrate. However, when the source gas is supplied to the surface of the substrate, the portion of the material that is not irradiated with the laser light is recrystallized due to the temperature difference between the material gas and the substrate, and the foreign matter generated by the recrystallization becomes wiring. The defect portion, which will degrade the quality of the substrate.

Therefore, in order to prevent recrystallization of the raw material contained in the source gas on the substrate, laser CVD processing (hereinafter also referred to simply as CVD processing) is performed in a state where the substrate is heated to a predetermined temperature (for example, before and after 40 ° C). .

In the method of heating a substrate, a method of heating the entire glass stage by, for example, a transparent thin film heater attached to the back surface of a glass stage on which a substrate is placed is known.

Further, for example, a method of heating a processed portion of a substrate by hot air is known (see, for example, Patent Document 1).

[Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-149046

However, if the substrate is heated, the substrate is warped, the processing position or the focal length is deviated due to thermal expansion, and the processing quality is expected to deteriorate. Further, when the amount of deflection increases, it is assumed that the surface of the substrate contacts a part of the laser processing apparatus and is damaged.

The present invention has been made in view of the above-described situation, and it is possible to reliably and efficiently heat the processed portion subjected to CVD processing, and to reduce the deflection of the object to be processed.

A laser processing apparatus according to an aspect of the present invention includes a supply unit that is provided with an exhaust port for blowing a material gas and hot air toward a processing portion of a processing target, and blowing a material gas And the position of the hot air blows the cooling air toward the periphery of the near portion of the processing portion, and sucks the material gas, the hot air, and the cooling air between the position where the material gas and the hot air are blown and the position where the cooling air is blown; and the irradiation means The processed portion is irradiated with laser light.

In the laser processing apparatus of one aspect of the present invention, the hot portion of the processing portion is heated by the hot air, and the peripheral portion of the processing portion is cooled by the cooling wind, and the processing portion is maintained in the raw material gas environment, and the processing is performed. Part of the laser light is irradiated, and a film is formed in the processed portion.

Therefore, it is possible to surely and efficiently heat the processed portion subjected to CVD processing, and to reduce the deflection of the object to be processed.

The laser processing apparatus is constituted by, for example, a laser repairing apparatus. The raw material gas system is composed of, for example, chromium carbonyl gas or the like. The supply unit is constituted by, for example, a gas window or the like. This illumination means is constituted by, for example, a laser unit that emits laser light.

The exhaust port may be formed to surround a position at which the material gas and the hot air are blown, and the air blowing port that blows out the cooling air is formed to surround the exhaust port.

Thereby, it is possible to more reliably heat the near portion of the processed portion and cool the periphery of the near portion of the processed portion.

In the supply unit, a heat insulating layer may be provided between a path through which the material gas and the hot air pass and a path through which the cooling air passes.

Thereby, it is possible to prevent the material gas or the hot air from being cooled by the cooling air.

A plurality of protrusions for forming a gap between the processing object and the installation surface may be provided on the setting surface of the stage on which the object to be processed is placed.

Thereby, it is possible to prevent the heat of the near portion of the processed portion of the processing object from being transmitted to the platform to escape and the near portion of the processed portion being cooled.

A cooling means for cooling the cooling air may be additionally provided.

Thereby, the periphery of the near portion of the processed portion can be more reliably cooled.

The cooling unit is capable of blowing hot air and material gas from different positions toward the processing portion.

Thereby, the hot air and the material gas can be surely supplied to the processing portion.

In the laser processing apparatus, a control means may be separately provided, and the control means performs control by performing the following steps in parallel: after the processing portion is heated by the hot air for a predetermined time, the raw material gas is generated in the vicinity of the processing portion. The material gas atmosphere is a first step of irradiating the processed portion with the laser light, and a second step of cooling the periphery of the processed portion near the crucible by the cooling air.

Thereby, the gas atmosphere of the near portion of the processed portion can be kept substantially the same, the processing unevenness can be prevented from occurring, and the periphery of the near portion of the processed portion can be surely cooled.

According to an aspect of the present invention, it is possible to reliably and efficiently heat the processed portion subjected to CVD processing, and to reduce the deflection of the object to be processed.

[Formation of the Invention]

The form for carrying out the invention (hereinafter referred to as an embodiment) will be described below. Further, the description is made in the following order. 1. Embodiment 2. Modification

<Embodiment>

[Configuration Example of Laser Processing Apparatus]

Fig. 1 is a perspective view showing a configuration example of an appearance of an embodiment of a laser processing apparatus to which the present invention is applied.

The laser processing apparatus 101 of FIG. 1 is a laser repairing apparatus that corrects defects such as wiring of a substrate used in a display panel such as an LCD panel or an organic EL panel. For example, the laser processing apparatus 101 performs CVD processing for removing a redundant pattern of a substrate by laser excitation plasma and forming a pattern missing from the substrate by a laser CVD method. The laser processing apparatus 101 is configured to include a base 111, glass stages 112a to 112d, rail members 113a and 113b, a column 114, and a laser processing head 115.

In addition, hereinafter, the longitudinal direction of the column 114 is referred to as an x-axis direction or a left-right direction, and the longitudinal direction of the rail members 113a and 113b is referred to as a y-axis direction or a front-rear direction, and is perpendicular to the x-axis and the y-axis. The direction is called the z-axis direction or the up-and-down direction.

Rail members 113a and 113b are provided at the left and right ends of the upper surface of the base 111. Further, between the rail member 113a and the rail member 113b, plate-shaped glass stages 112a to 112d whose longitudinal direction coincides with the y-axis direction are provided on the upper surface of the base 111 at predetermined intervals.

On the glass stages 112a to 112d, as shown in Fig. 2, a substrate 131 as a processing target is placed. At this time, as shown in FIG. 2, the substrate 131 can be easily placed on the glass load by, for example, inserting the arm portion 132 of the autoloader carrying the substrate 131 into the groove between the glass substrates. The stages 112a to 112d are removed by the glass stages 112a to 112d.

Further, a plurality of small protrusions made of a transparent resin are provided on the upper surface of the glass stages 112a to 112d. As will be described later, by the protrusions, the heat of the near portion of the processed portion of the substrate 131 is prevented from being conducted on the glass stage 112 to escape, and the processed portion is cooled by the near portion.

Further, if it is not necessary to individually distinguish the glass stages 112a to 112d, it will be referred to simply as the glass stage 112.

Rails extending in the y-axis direction are respectively provided on the upper surfaces of the rail members 113a and 113b. Further, a column 114 is placed between the rail member 113a and the rail member 113b, and both ends of the lower end of the column 114 in the longitudinal direction are fitted to the rails on the upper surfaces of the rail members 113a and 113b. Next, the column 114 is moved in the y-axis direction in accordance with the rails on the upper surface of the rail members 113a and 113b by an actuator or the like (not shown).

Further, rails are provided on the front and upper sides of the column 114, and the reverse L-shaped laser processing head 115 is fitted to the rails on the front and the top of the column 114. Next, the laser processing head 115 can be moved in the x-axis direction in accordance with the rails on the front surface and the upper surface of the column 114 by an actuator or the like (not shown).

The laser processing head 115 is provided with a processing unit 151 to be described later with reference to Fig. 3 . More specifically, each part of the processing unit 151 is built in the laser processing head 115 or mounted under the laser processing head 115. Next, the machining unit 151 is movable in the z-axis direction by an actuator or the like (not shown). Further, as described above, the machine unit 114 is moved in the y-axis direction or the laser processing head 115 is moved in the x-axis direction, whereby the machining unit 151 can be moved in the x-axis direction and the y-axis direction.

Further, the base 111 is provided with a control unit 152 (FIG. 3) that controls the movement of the machine column 114, the laser processing head 115, and the machining unit 151, or controls the operation of the machining unit 151.

Further, in the following, the base 111, the glass stage 112, and the rail members 113a and 113b which are not to be moved are collectively referred to as a fixed portion 101A, and the column 114 and the laser processing head 115 of the moving place are collectively referred to as a movable portion 101B. .

[Configuration Example of Processing Unit]

Fig. 3 is a block diagram showing a configuration example of the processing unit 151. The processing unit 151 is configured to include a gas window 161, a laser irradiation observation unit 162, a laser unit 163, a gas intake and exhaust unit 164, an air heater 165, an air heater control unit 166, and a cooling air supply unit 167. .

The gas window 161 is disposed above the substrate 131 placed on the glass stage 112 with a slight gap between the substrate 131 and the substrate 131. Further, the distance between the gas window 161 and the substrate 131 can be adjusted by moving the processing unit 151 in the z-axis direction. The details are described later with reference to FIGS. 4 and 5, and the gas window 161 has a material gas and a flushing gas to be supplied from the gas intake and exhaust unit 164, and is supplied from the air heater 165. The hot air is supplied to the introduction port of the portion of the substrate 131 to which the laser beam is irradiated (hereinafter referred to as a laser irradiation portion). Further, the gas window 161 is provided with a suction port for taking in the raw material gas and the flushing gas so as not to leak to the outside. Further, the gas window 161 has an introduction port for supplying cooling air to the periphery of the laser irradiation unit.

A laser irradiation observation unit 162 is disposed directly above the gas window 161. The laser irradiation observation unit 162 includes an attenuator (not shown) that changes the energy of the laser light, a variable aperture mechanism (not shown) that changes the beam shape of the laser light, and moves the objective lens up and down to adjust the focus position. The mechanism (not shown) and the microscope mechanism (not shown) for observing the laser irradiation portion of the substrate 131 are similar.

The laser unit 163 is provided with a laser light source that emits, for example, laser light for ZAP processing (hereinafter referred to as ZAP laser light) and laser light for CVD processing (hereinafter referred to as CVD laser light). Next, the laser light emitted from the laser unit 163 is irradiated onto the substrate 131 through the laser irradiation observation unit 162 and the gas window 161. Further, as described above, the machining unit 151 is moved in the x-axis direction and the y-axis direction in accordance with the movement of the machine post 114 and the laser machining head 115, whereby the position of the laser irradiation portion of the substrate 131 can be adjusted.

Further, for example, a third high harmonic (wavelength 351 nm) which is a Nd:YLF laser, a laser light having a repetition frequency of 30 Hz and a time width of 20 picoseconds is used as the ZAP laser light, and the Nd:YLF laser is used. The third harmonic (wavelength 349 nm), laser light having a repetition rate of 4 kHz and a time width of 30 nanoseconds is used as CVD laser light.

The gas intake and exhaust unit 164 is provided with a mechanism for supplying the raw material gas and the flushing gas to the gas window 161 at a desired timing, and performing the detoxification treatment of the exhaust gas sucked by the gas window 161. Further, for example, a chromium carbonyl gas is used in the raw material gas system, and for example, helium gas or argon gas is used in the flushing gas system.

The air heater 165 supplies hot air of a predetermined temperature (for example, 150 to 300 ° C) to the laser irradiation portion of the substrate 131 through the gas window 161 at a desired timing according to the control of the air heater control unit 166.

The air heater control unit 166 controls the timing of blowing hot air by the air heater 165, the temperature of the hot air, and the like according to the control of the control unit 152.

The cooling air supply unit 167 is configured by, for example, a fan, and controls the timing at which the cooling air is supplied to the gas window 161 at a desired timing and the cooling air is blown by the gas window 161 under the control of the control unit 152.

Further, the control unit 152 controls the operation of each unit of the movable unit 101B of the laser processing apparatus 101. For example, the control unit 152 controls the movement of the column 114 in the y-axis direction, the movement of the laser machining head 115 in the x-axis direction, and the movement of the machining unit 151 in the z-axis direction by an actuator or the like (not shown). . Further, for example, the control unit 152 controls the illumination of the laser irradiation observation unit 162, the aperture, the attenuation rate of the attenuator, and the like. Further, for example, the control unit 152 controls the energy, the repetition frequency, the time width (pulse width), the emission timing, and the like of the laser light emitted from the laser unit 163. Further, for example, the control unit 152 controls the opening and closing timing of the gas on/off valve (not shown) of the gas intake and exhaust unit 164. Further, for example, the control unit 152 controls the timing of blowing hot air by the air heater 165, the temperature of the hot air, and the like through the air heater control unit 166. Further, for example, the control unit 152 transmits the timing of blowing the cooling air by the gas window 166 through the cooling air supply unit 167.

[Configuration Example of Gas Window]

Next, a configuration example of the gas window 161 will be described with reference to FIGS. 4 and 5. 4 is a cross-sectional view of the gas window 161 viewed from the lateral direction, and FIG. 5 is a plan view of the lower surface of the gas window 161. The gas window 161 is composed of a disk-shaped window 201 and a disk-shaped window portion 202.

A gas introduction space portion 201A is formed in the center of the window 201. The gas introduction space portion 201A has a constant diameter from the lower surface of the window 201 to a predetermined height, and the diameter is expanded in a tapered shape from the middle toward the upper surface portion. Further, a window portion 202 for introducing the laser beam LB that is oscillated by the laser unit 163 and emitted by the objective lens 204 is provided on the upper surface of the window 201 so as to cover the opening of the upper end of the gas introduction space portion 201A.

The flushing gas introduction ports 201B-1 and 201B-2 are provided directly below the window portion 202 so as to be parallel to the upper surface of the opposite substrate 131 and facing each other. The flushing gas system supplied from the gas intake and exhaust unit 164 passes through the flushing gas introduction ports 201B-1 and 201B-2, and is blown out from the side surface of the gas introduction space portion 201A, and the window portion 202 is prevented by the flushing gas. In addition, the flushing gas system blown out from the side surface of the gas introduction space portion 201A collides with two flow directions directly under the window portion 202, and faces the lower side of the gas introduction space portion 201A, and vertically descends substantially perpendicular to the surface of the substrate 131.

In the field where the diameter of the gas introduction space portion 201A is constant, the material gas introduction port 201C is provided in parallel with the surface of the substrate 131. The raw material gas system supplied from the gas intake and exhaust unit 164 passes through the raw material gas introduction port 201C, is blown out from the side surface of the gas introduction space portion 201A, and is interposed in the flow of the flushing gas, so as to be substantially vertically lowered toward the upper surface of the substrate 131. The flow. Then, the raw material gas system is blown toward the laser irradiation portion by the opening at the lower end of the gas introduction space portion 201A, and is diffused in the CVD space 211 between the window 201 and the substrate 131. The CVD space 211 is adjacent to the laser irradiation portion of the substrate 131, that is, a portion where the thin film is formed on the substrate 131 by the laser light and the material gas.

Air blowing ports 201D-1 to 201D-3 are provided around the opening of the lower end of the gas introduction space portion 201A at the lower side of the window 201. The hot air supplied from the air heater 165 is blown out by the air blowing ports 201D-1 to 201D-3 toward the laser irradiation unit as shown by the arrow A1 in Fig. 4, and is diffused in the CVD space 211.

In the outer side of the air blowing ports 201D-1 to 201D-3 on the lower side of the window 201, an annular row is formed so as to surround the opening of the lower end of the gas introduction space portion 201A and the periphery of the air blowing ports 201D-1 to 201D-3. Air port 201E. Further, an annular exhaust port 201F is formed to surround the exhaust port 201E. Next, most of the gas including the flushing gas and the material gas blown by the gas introduction space portion 201A and the hot air blown by the air blowing ports 201D-1 to 201D-3 are as shown in Fig. 4, arrow B1. As shown in B2, it is sucked into the exhaust port 201E, and the remaining portion is sucked into the exhaust port 201F. The gas system sucked into the exhaust ports 201E and 201F is sent to the gas intake and exhaust unit 164 by suction ports (not shown) provided at the exhaust ports 201E and 201F.

As described above, the flushing gas, the material gas, and the gas containing the hot air are sucked by the exhaust ports 201E and 201F, whereby the donut-shaped gas curtain shielding portion 212 that blocks the CVD space 211 from the outside is formed. The gas curtain shield portion 212 prevents the material gas from leaking to the outside, and the CVD space 211 is maintained in the material gas atmosphere. Further, the circular portion P1 (hereinafter referred to as the heating portion P1) of the substrate 131 which is surrounded by the dotted line near the laser irradiation portions 201D-1 to 201D-3 is heated.

Further, on the outer side of the exhaust port 201F, an annular air blowing port 201G is formed in the vicinity of the outer periphery of the lower surface of the window 201 so as to surround the exhaust port 201F. Then, as shown by the arrows C1 to C4 in FIG. 4, the cooling air is blown toward the periphery of the heating portion P1 by the air blowing port 201G, and is diffused on the substrate 131. Among them, most of the cooling air that travels toward the inside of the window 201 in the direction of the CVD space 211 is sucked into the exhaust port 201F as indicated by the arrows D1 and D2 in FIG. 4, and the remaining portion is sucked into the exhaust port. 201E. The cooling air sucked into the exhaust ports 201E and 201F is sent to the gas intake and exhaust unit 164 through suction ports (not shown) provided at the exhaust ports 201E and 201F.

Thereby, the doughnut-shaped portion P2 (hereinafter referred to as the cooling portion P2) of the substrate 131 surrounded by the broken line around the heating portion P1 outside the vicinity of the vicinity of the exhaust port 201F is cooled.

As described above, the periphery of the heating portion P1 near the laser irradiation portion heated by the hot air of the substrate 131 is cooled, whereby the heating portion P1 can be prevented from becoming larger than necessary. Thereby, the deflection of the substrate 131 due to thermal expansion can be suppressed, and the processing position or the focal length can be prevented from deviating, and the processing quality can be improved.

Further, although the detailed position is not shown, in the window 201, the path through which the flushing gas, the material gas, and the hot air pass (hereinafter referred to as a gas hot air path), the cooling air, and the exhaust ports 201E and 201F are sucked in. A heat insulating layer 203 is provided between the path through which the gas passes (hereinafter referred to as a cooling air exhaust path). Thereby, it is possible to prevent the flushing gas, the material gas, and the hot air from being cooled by the cooling air.

Further, the temperature closer to the gas hot air path side than the heat insulating layer 203 of the window 201 is set to be higher than the temperature at which the raw material contained in the material gas starts to recrystallize by a heater (not shown) or the like according to the control of the control unit 152. Higher temperature (eg 65~70 °C).

[Effect of the protrusion of the glass stage 112]

Fig. 6 shows a state in which the substrate 131 is placed on the glass stage 112.

As described above, a plurality of protrusions are provided on the installation surface of the glass stage 112. Incidentally, in Fig. 6, only the projections 251-1 to 251-3 in the plurality of projections are illustrated. Further, in the following, if it is not necessary to separately distinguish the protrusions 251-1 to 251-3, it is simply referred to as a protrusion 251.

The substrate 131 is supported by the protrusion portion 251, thereby forming a gap between the substrate 131 and the glass stage 112 to prevent the heat of the substrate 131 heated by the hot air from being conducted on the glass stage 112. In the case where the laser irradiation portion is cooled near the crucible. As a result, it is possible to more reliably prevent the raw material contained in the material gas from being recrystallized on the substrate 131.

On the other hand, by supporting the substrate 131 with the protruding portion 251, the substrate 131 is more likely to be deflected by heat than the mounting surface directly placed on the glass stage 112. However, as described above, by cooling the periphery of the laser irradiation portion near the heating portion P1, it is possible to suppress the substrate 131 from being supported by the protrusion portion 251 so that the deflection of the substrate 131 is increased.

[Repair processing]

Next, the repair processing performed by the laser processing apparatus 101 will be described with reference to the flowchart of Fig. 7. In addition, this flowchart shows the flow of the process from the completion of the processing of a certain portion of the substrate 131 to the end of the processing of the next portion.

In step S1, the cooling air supply unit 167 starts to supply the cooling air in accordance with the control of the control unit 152. As a result, the cooling air is blown from the air outlet 201G, and the portion of the substrate 131 that is close to the air outlet 201G (the cooling portion P2 in FIG. 4) is cooled.

Further, when the supply of the cooling air has started, the processing of step S1 is skipped. Further, during the processing of the substrate 131, the cooling air is blown out from the gas window 161 at all times. In other words, in parallel with the steps S2 to S13, a step of cooling the periphery of the laser irradiation portion of the substrate 131 is performed.

In step S2, the control unit 152 causes the machining unit 151 to ascend in the z-axis direction. For example, when processing the substrate 131, the distance between the substrate 131 and the gas window 161 is set to be about 0.5 mm. Next, the control unit 152 raises the machining unit 151 in the z-axis direction so that the distance between the substrate 131 and the gas window 161 is expanded to about 2 to 3 mm in order to move the machining unit 151 to the next machining position.

In step S3, the gas intake and exhaust unit 164 stops the supply of the material gas under the control of the control unit 152. Further, if the supply of the material gas has been stopped, the processing of step S3 is skipped. In addition, the supply of flushing gas continues.

In step S4, the air heater 165 starts to supply hot air according to the control of the control unit 152 and the air heater control unit 166. Thereby, the hot air is blown out from the air blowing ports 201D-1 to 201D-3, and the portion of the substrate 131 that is close to the air blowing ports 201D-1 to 201D-3 (the heating portion P1 in Fig. 4) is heated.

In step S5, the laser processing apparatus 101 is a moving processing unit 151. That is, the control unit 152 controls the position of the laser machining head 115 in the x-axis direction and the position of the column 114 in the y-axis direction, and moves the machining unit 151 to the next machining position.

In step S6, the control unit 152 lowers the machining unit 151 in the z-axis direction so that the distance between the substrate 131 and the gas window 161 approaches approximately 0.5 mm.

In step S7, the control unit 152 sets the supply time of the hot air at the timer. In other words, the controller 152 sets the temperature of the field of the processed surface of the substrate 131 including the region in contact with the CVD space 211 by the timer setting the hot air blown by the air blowing ports 201D-1 to 201D-3. The time required for the temperature at which the raw material contained in the raw material gas does not recrystallize (for example, before and after 40 ° C) is formed.

In step S8, the laser processing apparatus 101 starts preparation for processing. For example, the laser irradiation observation unit 162 adjusts the focus position of the objective lens so that the focal position of the laser light emitted from the laser unit 163 matches the processing surface of the substrate 131 in accordance with the control of the control unit 152. Further, the control unit 152 acquires the processing conditions input by the user through the input unit (not shown) by acquiring the energy of the laser light, the value of the attenuation rate of the laser light obtained by the attenuator, the size of the slit, and the like. According to the setting, the laser irradiation observation unit 162 and the laser unit 163 are controlled. Further, the control unit 152 acquires position detailed information for performing CVD processing and ZAP processing by the user input through the input unit (not shown).

In step S9, the air heater 165 stops the supply of the hot air at the time when the timer set in step S7 expires, based on the control of the control unit 152 and the air heater control unit 166. As described above, the hot air is stopped before the supply of the material gas, and the hot air is not supplied during the supply of the material gas, whereby the gas atmosphere in the CVD space 211 during processing can be kept substantially the same, and processing unevenness can be prevented from occurring.

In step S10, the gas intake and exhaust unit 164 starts to supply the material gas in accordance with the control of the control unit 152. Thereby, the material gas is blown out from the lower end of the gas introduction space portion 201A, and is diffused in the CVD space 211 between the window 201 and the substrate 131.

In step S11, the laser processing apparatus 101 performs CVD processing. Specifically, the control unit 152 controls the position of the laser processing head 115 in the x-axis direction and the position of the column 114 in the y-axis direction, and controls the emission of the laser light from the laser unit 163. The laser light is irradiated onto the portion where the CVD process of the substrate 131 set in step S8 is performed. Thereby, a film obtained by the raw material contained in the material gas is formed in the portion where the substrate 131 is irradiated with the laser light to form a new pattern.

In step S12, the gas intake and exhaust unit 164 stops the supply of the material gas in accordance with the control of the control unit 152.

In step S13, the laser processing apparatus 101 performs ZAP processing. Specifically, the control unit 152 controls the position of the laser processing head 115 in the x-axis direction and the position of the column 114 in the y-axis direction, and controls the emission of the laser light from the laser unit 163. The laser light is irradiated onto the portion where the ZAP processing of the substrate 131 set in step S8 is performed. Thereby, the pattern in which the substrate 131 is irradiated to the portion of the laser light is removed.

Further, if ZAP processing is not required, the processing of steps S12 and S13 is skipped. Further, when the portion to be processed remains, the processing is additionally performed by the step S1.

As described above, it is possible to reliably and efficiently heat the portion of the substrate subjected to CVD processing.

That is, since the transparent film heater is not used, it is not necessary to perform repair or replacement due to disconnection of the transparent film heater, etc., and it is possible to reduce the cost or labor required, or to prevent the operation from being stagnant.

Further, since only a part of the near CVD which is subjected to CVD processing is heated, the energy required for heating can be deleted, and by heating the unnecessary portion, it is possible to prevent adverse effects due to heat to peripheral parts or machines.

Further, the parts for heating the substrate can be miniaturized, and it is not necessary to replace the size of the substrate to be processed, and the cost can be reduced, and the storage of the skin care products can be easily performed.

Further, in the range of movement of the processing unit 151, all portions of the substrate can be heated without missing, and insufficient heating can be prevented.

Further, by cooling the periphery of the laser irradiation portion of the substrate 131 near the crucible, the deflection of the substrate 131 can be suppressed. Thereby, it is possible to prevent the processing position or the focal length from deviating, and the processing quality can be improved. Further, the case where the surface of the substrate 131 is prevented from coming into contact with a part of the laser processing apparatus 101 is damaged.

<2. Modifications>

In the above description, an example in which hot air of a predetermined temperature or higher is supplied from the air heater 165 is shown. However, since the window 201 is set at a relatively high temperature (65 to 70 ° C) as described above, the air having the same temperature as the ambient temperature is supplied from the air heater 165, and is blown only by the air supply ports 201D-1 to 201D-3 of the window 201. Hot air is blown out from the air outlets 201D-1 to 201D-3. Then, the substrate 131 can be heated by the hot air.

Further, the number of the flushing gas introduction port, the material gas inlet port, and the air supply port shown in FIGS. 4 and 5 is an example, and may be increased or decreased as needed.

Further, for example, the processing unit 301 shown in FIG. 8 may be used instead of the processing unit 151.

The machining unit 301 differs from the machining unit 151 of FIG. 3 in that the cooler 311 is provided. Then, the cooling air cooled to a temperature lower than the ambient temperature of the laser processing apparatus 101 by the cooler 311 is blown out by the gas window 161.

Thereby, the cooling portion P2 (Fig. 4) of the substrate 131 is thermally contracted, and the expansion of the heating portion P1 is canceled, so that the deflection of the substrate 131 can be further reduced.

The embodiment of the present invention is not limited to the embodiment described above, and various modifications can be made without departing from the spirit and scope of the invention.

101. . . Laser processing device

101A. . . Fixed part

101B. . . Movable part

111. . . Abutment

112, 112a to 112d. . . Glass stage

113a, 113b. . . Rail member

114. . . Machine column

115. . . Laser processing head

131. . . Substrate

132. . . Arm

151. . . Processing unit

152. . . Control department

161. . . Gas window

162. . . Laser irradiation observation unit

163. . . Laser unit

164. . . Gas suction and exhaust unit

165. . . Air heater

166. . . Air heater control unit

167. . . Cooling air supply unit

201. . . window

201A. . . Gas introduction space

201B-1, 201B-2. . . Flush gas inlet

201C. . . Raw material gas inlet

201D-1 to 201D-3. . . Outlet

201E, 201F. . . exhaust vent

201G. . . Outlet

202. . . Window

203. . . Insulation layer

204. . . Mirror

211. . . CVD space

212. . . Gas curtain shelter

251-1 to 251-3. . . Protrusion

301. . . Processing unit

311. . . Cooler

B1, B2, C1 to C4, D1, D2. . . Arrow

LB. . . laser

P1. . . Heating section

P2. . . Cooling section

Fig. 1 is a perspective view showing a configuration example of an appearance of an embodiment of a laser processing apparatus to which the present invention is applied.

Fig. 2 is a view showing an example of a method of setting and removing a substrate.

Fig. 3 is a block diagram showing a configuration example of a machining unit of the laser processing apparatus.

Figure 4 is a cross-sectional view of the gas window of the processing unit viewed from the lateral direction.

Figure 5 is a plan view of the underside of the gas window of the processing unit.

Fig. 6 is a view showing an example of the arrangement of the substrate.

Figure 7 is a flow chart for explaining the laser repair process performed by the laser processing apparatus.

Fig. 8 is a block diagram showing a modification of the machining unit.

101. . . Laser processing device

101A. . . Fixed part

101B. . . Movable part

112. . . Glass stage

131. . . Substrate

151. . . Processing unit

152. . . Control department

161. . . Gas window

162. . . Laser irradiation observation unit

163. . . Laser unit

164. . . Gas suction and exhaust unit

165. . . Air heater

166. . . Air heater control unit

167. . . Cooling air supply unit

Claims (7)

A laser processing apparatus characterized by comprising: a supply unit having an exhaust port for blowing a material gas and hot air toward a processing portion of a processing target, and blowing the material gas and the The hot air is blown outward from the vicinity of the processing portion near the hot air, and the raw material gas, the hot air, and the cooling air are sucked between a position at which the raw material gas and the hot air are blown and a position at which the cooling air is blown; And an irradiation means for irradiating the processed portion with laser light. The laser processing apparatus according to claim 1, wherein the exhaust port is formed to surround a position at which the material gas and the hot air are blown, and an air supply port for blowing the cooling air surrounds the exhaust port. The way it is formed. A laser processing apparatus according to claim 1 or 2, wherein a heat insulating layer is provided in the supply unit between a path through which the material gas and the hot air pass and a path through which the cooling air passes. The laser processing apparatus according to any one of claims 1 to 3, wherein a plurality of protrusions for forming a gap between the processing object and the installation surface are provided on a mounting surface of the stage on which the object to be processed is placed . A laser processing apparatus according to any one of claims 1 to 4, further comprising cooling means for cooling the cooling air. The laser processing apparatus according to any one of claims 1 to 5, wherein the cooling unit blows the hot air and the material gas from different positions toward the processing portion. The laser processing apparatus according to claim 1, further comprising: a control means for controlling the processing portion to be heated by the hot air for a predetermined time by the hot air The material gas is a first step of irradiating a raw material gas atmosphere in the processing portion, irradiating the laser beam with the processing portion, and a second step of cooling the periphery of the processing portion by the cooling air.