KR102033735B1 - Cooling apparatus for substrate and Chemical vapor deposition apparatus including the same - Google Patents

Cooling apparatus for substrate and Chemical vapor deposition apparatus including the same Download PDF

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Publication number
KR102033735B1
KR102033735B1 KR1020130141344A KR20130141344A KR102033735B1 KR 102033735 B1 KR102033735 B1 KR 102033735B1 KR 1020130141344 A KR1020130141344 A KR 1020130141344A KR 20130141344 A KR20130141344 A KR 20130141344A KR 102033735 B1 KR102033735 B1 KR 102033735B1
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South Korea
Prior art keywords
substrate
chamber
cooling
plate
gas
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KR1020130141344A
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Korean (ko)
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KR20150057679A (en
Inventor
김종석
이정형
함윤혜
이영종
성기현
최창식
윤종갑
이재호
Original Assignee
엘지디스플레이 주식회사
주식회사 선익시스템
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Priority to KR1020130141344A priority Critical patent/KR102033735B1/en
Publication of KR20150057679A publication Critical patent/KR20150057679A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices

Abstract

The present invention relates to a substrate cooling apparatus and a chemical vapor deposition apparatus including the same. According to an aspect of the present invention, there is provided a substrate cooling apparatus for cooling a substrate seated inside a chamber, the substrate cooling apparatus including a substrate cooling plate installed at a lower portion of the substrate to cool the substrate, and a cooling gas into a space between the substrate and the substrate cooling plate. May be introduced to transfer the heat of the substrate to the substrate cooling plate. According to the present invention as described above, the substrate is easily cooled and the deposition is performed under a stable environment, thereby improving the deposition quality.

Description

Cooling apparatus for substrate and Chemical vapor deposition apparatus including the same

The present invention relates to a substrate cooling apparatus and a chemical vapor deposition apparatus including the same, and more particularly, to a substrate cooling apparatus and a chemical vapor deposition apparatus including the same for cooling the substrate to be deposited under a stable environment. .

Flat panel displays (FPDs), such as liquid crystal displays (LCDs), plasma display panels (PDPs), and organic light emitting diodes (OLEDs), are manufactured through a variety of processes. A thin film deposition process for forming a thin film is included.

The thin film deposition process may be largely performed by physical vapor deposition (PVD) and chemical vapor deposition (CVD). Among them, the chemical vapor deposition apparatus is a device that sends a reaction gas having a high vapor pressure to a heated substrate in a vacuum chamber so that a film of the reaction gas is deposited on the substrate.

In the chemical vapor deposition apparatus, the reaction gas supplied into the reaction chamber causes a chemical reaction on the upper surface of the heated substrate, whereby the thin film layer is required to have a uniform thickness in all regions of the substrate surface. .

In addition, the organic material deposited on the substrate may be in a high temperature state, and thus the deposition quality may be degraded due to denaturation due to an increase in temperature of the substrate during deposition.

Republic of Korea Patent Publication No. 10-2013-0026398 (published March 13, 2013)

Accordingly, an object of the present invention is to solve the problems of the prior art as described above, to provide a substrate cooling apparatus and a chemical vapor deposition apparatus including the same for cooling the substrate to be deposited under a stable environment. .

Another object of the present invention is to provide a substrate cooling apparatus and a chemical vapor deposition apparatus including the same, by which the temperature gradient inside the chamber is uniform and the gas flowing into the chamber is uniformly ejected to increase the uniformity of the deposition.

According to an embodiment of the present invention for achieving the above object, the substrate cooling apparatus according to the present invention is a substrate cooling apparatus for cooling the substrate seated in the chamber, the lower portion of the substrate is installed And a substrate cooling plate for cooling the substrate, and a cooling gas may be introduced into a space between the substrate and the substrate cooling plate to transfer heat of the substrate to the substrate cooling plate.

A gas inlet plate through which the cooling gas is introduced may be disposed between the substrate and the substrate cooling plate.

One side of the gas inlet plate may be formed with a gas inlet through which the cooling gas flows.

The cooling gas may be any one of helium, argon, nitrogen, and carbon dioxide.

According to another feature of the invention, the chemical vapor deposition apparatus according to the present invention comprises a chamber in which the substrate is seated; A showerhead assembly installed at an upper portion of the chamber to eject reaction gas into the chamber; And it may include a shutter for opening and closing the substrate inlet formed in the chamber so that the substrate is injected.

The chamber heating part may be installed along the edge of the chamber.

A heat shield may be installed between the inner wall of the chamber and the chamber heating part to block heat generated from the chamber heating part from being transferred to the inner wall of the chamber.

An inductively coupled plasma antenna (ICP) antenna may be installed in the chamber to remove a material deposited in the chamber.

The apparatus may further include a substrate elevating device for elevating the substrate to adjust the distance between the substrate and the showerhead assembly.

A substrate cooling plate may be installed below the substrate, and a substrate clamping device may be installed below the chamber to closely contact the substrate, the mask, and the substrate cooling plate.

The initiator introduced into the showerhead assembly can be broken down into radical ions while passing through the remote plasma.

According to the present invention, helium gas was injected between the substrate cooling plate and the substrate to improve the heat transfer rate. Therefore, the substrate is easily cooled, and deposition is performed under a stable environment, thereby improving deposition quality.

Moreover, according to this invention, the uniformity of vapor deposition can be improved by providing a chamber heating part and making the temperature gradient inside a chamber uniform.

1 is a front view showing the inside of the chemical vapor deposition apparatus according to an embodiment of the present invention.
Figure 2 is a plan sectional view showing a gas inlet plate of the substrate cooling device.
Figure 3 is a plan view showing the inside of the chemical vapor deposition apparatus according to an embodiment of the present invention.
4 is a front view of the showerhead assembly;
Figure 5 is a block diagram showing the initiator heating portion of the showerhead assembly.
Figure 6 is a plan view showing a gas heating portion of the showerhead assembly.
7 is a plan view showing first and second reactant gas inlet plates of a showerhead assembly.

As the inventive concept allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the written description. However, this is not intended to limit the present invention to specific embodiments, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprises" or "having" are intended to indicate that there is a feature, number, step, action, component, part, or combination thereof described on the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.

Hereinafter, an embodiment of a substrate cooling apparatus and a chemical vapor deposition apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

1 is a front view showing the inside of the chemical vapor deposition apparatus according to an embodiment of the present invention, Figure 2 is a plan sectional view showing a gas inlet plate of the substrate cooling apparatus, Figure 3 is a chemical according to an embodiment of the present invention It is a top view which shows the inside of a vapor deposition apparatus.

According to this, the substrate cooling apparatus according to the present invention includes a substrate cooling plate 16 installed in the lower portion of the substrate 12 to cool the substrate 12, the substrate 12 and the substrate cooling Cooling gas G may be introduced into the space between the plates 16 to transfer the heat of the substrate 12 to the substrate cooling plate 16.

Deposition materials deposited on the substrate 12 may generally cause denaturation when kept at high temperature for a long time. That is, the temperature of the substrate 12 may increase due to the thermal energy of the material when the initiator and the reaction gas heated by the chemical vapor are deposited on the substrate 12. In addition, since the temperature inside the chamber 10 is maintained at about 200 ° C. or more for a stable deposition process, continuous thermal energy is transferred to the substrate 12. Therefore, in this embodiment, the cooling gas G is introduced into the space between the substrate 12 and the substrate cooling plate 16 so that heat transferred to the substrate 12 can be transferred to the substrate cooling plate 16. will be.

More specifically, referring to FIG. 2, a gas inlet plate 14 may be installed between the substrate 12 and the substrate cooling plate 16. In addition, the inside of the gas inlet plate 14 is opened up and down, and the cooling gas G may be introduced through the gas inlet 15.

As the cooling gas G serving as the cooling medium, helium gas, gas such as argon, nitrogen and carbon dioxide, liquid such as water, and the like may be used.

The substrate cooling plate 16 serves to cool the substrate 12 at the bottom of the substrate 12. For example, the substrate cooling plate 16 may maintain the substrate 12 below 40 ° C. The cooling of the substrate 12 as described above is for configuring optimum process conditions in chemical vapor deposition.

On the other hand, the chemical vapor deposition apparatus according to the present invention comprises a chamber 10, the substrate 12 is seated therein; A showerhead assembly (40) installed above the chamber (10) to eject reaction gas into the chamber (10); And a shutter 30 that opens and closes the substrate inlet 26 formed in the chamber 10 so that the substrate 12 is input.

1 and 3, the substrate 12 seated inside the chamber 10 is supported by the substrate elevating device 18 to adjust its height. When the reaction gas is ejected from the showerhead assembly 40 and deposited on the substrate 12, it is necessary to adjust the distance between the substrate 12 and the showerhead assembly 40 according to the process conditions. At this time, the height of the substrate 12 is properly adjusted by the substrate elevating device 18, the distance to the showerhead assembly 40 can be adjusted. For example, the substrate elevating device 18 may adjust the distance between the substrate 12 and the showerhead assembly 40 to 0 to 100 mm.

Meanwhile, the chamber heating unit 20 is installed along the edge of the chamber 10. The chamber heating unit 20 may be installed along an edge to surround the inside of the chamber 10 in the form of a wall. This is to maintain a uniform temperature by heating the temperature inside the chamber 10 to room temperature or more, and the chamber heating part 20 can be detachably attached to the inside of the chamber 10.

In addition, a heat shield 22 is provided between the inner wall of the chamber 10 and the chamber heating unit 20 to block heat generated from the chamber heating unit 20 from being transferred to the inner wall of the chamber 10. . In order to directly heat the chamber heating unit 20 in order to heat the inside of the chamber 10 and maintain the predetermined temperature, heat may be transferred to the components mounted in the chamber 10 to be damaged, and in particular, 70 ° C. or more. When heated, safety problems such as burns may also occur. The heat shield 22 may be installed along the edge of the chamber 10 in the form of a wall like the chamber heating unit 20.

An inductively coupled plasma antenna (ICP) antenna 24 is installed in the chamber 10 to remove a material deposited in the chamber 10. During chemical vapor deposition, it is necessary to periodically clean the inside of the chamber 10 because deposited materials other than the substrate 12 may cause foreign matter on the substrate 12 or problems in normal operation of the equipment. In addition, when the deposition material is replaced by deposition, heterogeneous materials are evaporated from the inner wall of the heated chamber 10 to be deposited on the substrate 12. Therefore, in this embodiment, the ICP antenna 24 is installed inside the chamber 10 to wash the deposited material.

One side of the chamber 10 is formed to open the substrate inlet 26 for the introduction of the substrate 12. In the substrate inlet 26, a substrate 12 for deposition is injected or a substrate 12 on which deposition is completed is carried out. The gate 28 is movable on the outer wall of the chamber 10 to open and close the substrate inlet 26.

In the present embodiment, a shutter 30 for opening and closing the substrate inlet 26 is installed on the inner wall of the chamber 10. During chemical vapor deposition, the chamber 10 maintains a temperature above room temperature (about 200 ° C.), and during deposition, the deposition material is heated while moving from the upper showerhead assembly 40 to the lower substrate 12. The deposition material may be deposited by moving toward the substrate inlet 26 having a relatively low temperature. Therefore, in the present embodiment, by installing the shutter 30 to open and close the substrate inlet 26, heat loss generated from the substrate inlet 26 may be prevented and the deposition material may be smoothly moved to the substrate 12 positioned below. Make sure

The substrate clamping device 32 is installed below the chamber 10. The substrate clamping device 32 is provided to bring the substrate 12, the mask, and the substrate cooling plate 16 into close contact with each other. Since the substrate clamping device 32 is installed below the chamber 10, the substrate clamping device 32 may interfere with the lifting of the substrate 12. You can prevent it.

On the other hand, referring to Figure 4, the shower head assembly 40, the first reaction gas inlet plate 42 through which the first reaction gas flows; A second reaction gas inlet plate 44 stacked on the first reaction gas inlet plate 42 and into which a second reaction gas is introduced; And an initiator inlet plate 46 stacked on an upper portion of the second reaction gas inlet plate 44 and into which an initiator is introduced such that the first and second reaction gases react.

As described above, in the present embodiment, the shower head assembly 40 forms a three-stage structure in which an initiator and two kinds of reaction gases (monomers) are simultaneously introduced and ejected. In addition, the inflow plates 42, 44, and 46 are stacked so as not to mix with each other until they are ejected through the nozzle into the chamber 10, and are ejected below the initiator inlet plate 46 disposed at the bottom thereof. It is composed. The inlet plates 42, 44, 46 may be coupled to one another, for example, by welding or the like. In addition, in the present embodiment, it is described that two kinds of reaction gases are introduced and ejected. However, the present invention is not limited thereto, and three or more kinds of reaction gases may be introduced and ejected. In this case, it is obvious that three or more kinds of reaction gas inlet plates may be stacked.

In addition, the initiator is decomposed into radical ions, and since the energy decreases according to the configuration of the access path (curve flow, volume, etc.) of the initiator, in order to minimize the collision before the radical ions formed at the top are ejected to the nozzle. It was configured to be ejected from the top.

Meanwhile, referring to FIG. 5, an initiator heating unit 50 is installed on the initiator inlet plate 46 to decompose the initiator into radical ions. The initiator heating unit 50 heats an initiator of about 200 ° C. flowing into the showerhead assembly 40 to about 400 ° C. to be decomposed into radical ions. The initiator heating unit 50 includes an upper plate 52; A lower plate 56 coupled to a lower portion of the upper plate 52; And a heater 58 disposed between the upper plate 52 and the lower plate 56. In addition, a plurality of through holes 54 through which the initiator penetrates is formed in the upper plate 52 and the lower plate 56.

Although the initiator has been described as being decomposed into radical ions while passing through the initiator heating unit 50, the present invention is not limited thereto, and the initiator may be decomposed into radical ions through a remote plasma before the showerhead assembly 40 is introduced. It is possible. In addition, the initiator may be configured to pass through both the remote plasma and the initiator heating unit 50.

Referring to FIG. 6, the initiator and the reactant gas are heated to a temperature above room temperature (about 200 ° C.) before entering the showerhead assembly 40. Accordingly, a gas heating part is provided in the first reactant gas inlet plate 42 to heat the showerhead assembly 40 while the introduced initiator and the reactant gas are uniformly diffused in the showerhead assembly 40 and ejected through the nozzle. 60 may be installed along the edge. As such, when the shower head assembly 40 is not heated, the heated reaction gas does not uniformly diffuse after the heated reaction gas flows into the shower head assembly 40, and thus, a substance may be stuck to the nozzle part, causing clogging.

Referring to FIG. 7, first and second gas flow paths 43 and 45 are formed in the first and second reaction gas inlet plates 42 and 44, respectively. The reaction gas is symmetrically introduced at both sides of the first and second reaction gas inflow plates 42 and 44, and the first and second gas flow paths 43 and 45 guide the introduced reaction gas to the center portion. As such, when the first and second gas flow paths 43 and 45 are not formed, the reaction gas may be ejected first from the nozzle close to the inlet through which the reaction gas flows. However, in the present embodiment, the first and second gas flow paths 43 When 45 is ejected from the nozzle by guiding the reaction gas to the central portion, a uniform amount can be ejected regardless of the position of each nozzle.

Although the embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of rights.

10 chamber 12 substrate
14 gas inlet plate 15 gas inlet
18 substrate lifting device 16 substrate cooling plate
20: chamber heating portion 22: heat shield
24: ICP antenna 26: substrate inlet
28: gate 30: shutter
40 shower head assembly 42 first reaction gas inlet plate
43: first gas flow path 44: second reaction gas inlet plate
45: second gas flow path 46: initiator inlet plate
50 initiator heating unit 52 top plate
54 through hole 56 lower plate
58: heater 60: gas heating unit

Claims (11)

A chamber in which the substrate is seated therein;
A substrate cooling device installed below the substrate to cool the substrate;
A showerhead assembly installed at an upper portion of the chamber to eject reaction gas into the chamber; And
It includes a shutter for opening and closing the substrate inlet formed in the chamber so that the substrate is inserted,
The substrate cooling apparatus is provided at a lower portion of the substrate to cool the substrate, and a gas disposed between the substrate cooling plate and the substrate such that a cooling gas flows into the space between the substrate cooling plate and the substrate. Including an inlet plate,
The gas inlet plate supports an edge of the substrate,
The cooling gas is filled in the gas inlet plate to transfer heat of the substrate to the substrate cooling plate,
The showerhead assembly includes an initiator inlet plate into which an initiator is introduced such that a first reactant gas and a second reactant gas react, and an initiator heating unit disposed above the initiator inlet plate and decomposing the initiator into radical ions. ,
The initiator heating portion includes a top plate, a bottom plate coupled to the bottom of the top plate, a heater disposed between the top plate and the bottom plate, and a plurality of formed on each of the top plate and the bottom plate to penetrate the initiator. Including a through hole,
The heater is a chemical vapor deposition apparatus disposed in a zigzag between the plurality of through holes. delete The method of claim 1,
One side of the gas inlet plate is a chemical vapor deposition apparatus is formed a gas inlet for the cooling gas is introduced. The method of claim 1,
The cooling gas is any one of helium, argon, nitrogen, carbon dioxide chemical vapor deposition apparatus. delete The method of claim 1,
The chemical vapor deposition apparatus is installed in the chamber along the edge of the chamber heating unit. The method of claim 6,
And a heat shield between the inner wall of the chamber and the chamber heating part to block heat generated from the chamber heating part from being transferred to the inner wall of the chamber. The method of claim 1,
And an inductively coupled plasma antenna (ICP) antenna for removing a material deposited in the chamber. The method of claim 1,
And a substrate elevating device for elevating the substrate to control the distance between the substrate and the showerhead assembly. The method of claim 1,
And a substrate clamping device installed below the chamber to closely contact the substrate, mask, and substrate cooling device. delete
KR1020130141344A 2013-11-20 2013-11-20 Cooling apparatus for substrate and Chemical vapor deposition apparatus including the same KR102033735B1 (en)

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KR102033735B1 true KR102033735B1 (en) 2019-10-17

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011043063A1 (en) * 2009-10-05 2011-04-14 キヤノンアネルバ株式会社 Substrate cooling device, sputtering device, and method for producing an electronic device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090026186A (en) * 2006-07-11 2009-03-11 도쿄엘렉트론가부시키가이샤 Film formation method, cleaning method, and film formation device
KR100849929B1 (en) * 2006-09-16 2008-08-26 주식회사 피에조닉스 Apparatus of chemical vapor deposition with a showerhead regulating the injection velocity of reactive gases positively and a method thereof
KR101000094B1 (en) * 2007-08-08 2010-12-09 엘아이지에이디피 주식회사 Deposition apparatus for substrate
KR101493449B1 (en) 2011-09-05 2015-02-16 엘아이지에이디피 주식회사 Showerhead and chemical vapor deposition apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011043063A1 (en) * 2009-10-05 2011-04-14 キヤノンアネルバ株式会社 Substrate cooling device, sputtering device, and method for producing an electronic device

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