KR101250522B1 - A gas supply unit of a chemical vapor deposition apparatus and a method for manufacturing thereof - Google Patents

Abstract

The present invention relates to a gas supply unit of a chemical vapor deposition apparatus and a method for manufacturing the same, a cooling chamber, a gas chamber provided above the cooling chamber, both ends of which are respectively installed on the bottom of the gas chamber and the bottom of the cooling chamber. A plurality of first tubes and both ends include a plurality of second tubes are respectively provided on the upper surface of the gas chamber and the bottom of the cooling chamber, one surface of the gas chamber can provide and discharge water flow into the gas chamber At least two openings and a shielding member for shielding the opening may be achieved by a gas supply unit and a control method thereof.
According to the present invention, each process gas can be uniformly supplied to the process space, thereby improving wafer deposition quality.
In addition, by removing the foreign matter introduced into the gas chamber during manufacturing of the gas supply unit, it is possible to prevent the phenomenon that the foreign matter falls on the wafer during the growth process, the failure occurs.

Description

Gas Supply Unit of Chemical Vapor Deposition Apparatus and Manufacturing Method Thereof {A GAS SUPPLY UNIT OF A CHEMICAL VAPOR DEPOSITION APPARATUS AND A METHOD FOR MANUFACTURING THEREOF}

The present invention relates to a gas supply unit of a chemical vapor deposition apparatus and a manufacturing method thereof. Specifically, the present invention relates to a gas supply unit provided at a chemical vapor deposition value for growing an epitaxial layer on a substrate, and a method of manufacturing the same.

Chemical vapor deposition means a process of forming a thin film on a substrate by using a chemical reaction of a process gas. Therefore, the chemical vapor deposition apparatus supplies at least one highly reactive process gas to the chamber, and uses the light, heat, plasma, microwave, X-ray, or electric field to process the process gas. Activation to form a thin film of good quality on the substrate.

The chemical vapor deposition apparatus is provided with a gas supply unit for supplying a process gas into the process chamber. The gas supply unit supplies heterogeneous process gases using a plurality of injection holes formed in the upper portion of the process chamber. Then, the deposition occurs on the substrate while the reaction occurs between different process gases inside the process chamber. At this time, the gas supply unit has an independent flow path according to each process gas so that each process gas is prevented from occurring before it is supplied into the process chamber.

However, in the related art, since each process gas is supplied to the process space along a separate flow path, it is difficult to uniformly supply the process gas onto the wafer. Thus, a problem arises in that the thin film is unevenly deposited on the wafer.

In order to overcome the above-mentioned problems, the present invention provides a gas supply unit of a chemical vapor deposition apparatus capable of uniformly supplying respective process gases by forming respective injection holes supplied with different process gases in a uniform pattern, and the same. To provide a manufacturing method.

Furthermore, the present invention removes the foreign matter remaining inside the gas supply unit in the gas supply unit manufacturing step, the gas supply unit of the chemical vapor deposition apparatus for preventing the phenomenon that the foreign matter falls on the wafer during the formation of a thin film and a method of manufacturing the same To provide.

An object of the present invention described above is to arrange a first plate and a second plate forming a cooling chamber, and to install a plurality of first and second tubes to penetrate the first and second plates, and the second A third plate is disposed above the plate to form a gas chamber, and the third plate is disposed so that the upper end of the second tube passes through the third plate, and the bottom surface of the first plate is cut through a cutting or polishing process. Flattening and forming a water flow passing through the gas chamber through the inlet and outlet formed on the wall of the gas chamber to remove foreign substances remaining inside the gas chamber, shielding the inlet and the outlet to close the gas chamber It can be achieved by the gas supply unit manufacturing method of the chemical vapor deposition apparatus to be sealed.

Here, the injection hole and the discharge port may be formed in the third plate.

The removing of the foreign matter may include forming a passage through the first tube as a closed passage to prevent the water flow passing through the gas chamber from continuously flowing through the first tube to the bottom of the first plate. It is preferable to proceed in one state.

For example, in a state in which a water tank is installed on the bottom of the first plate to form a closed space on the bottom of the first plate, or a separate panel is installed on the bottom of the first plate to seal the bottom of the first tube. Water flow may be provided into the gas chamber.

In this case, the injection hole and the discharge port may be formed to have an area of 1mm ² or more.

When the foreign matter is removed, the shielding member is welded to the inlet and the outlet to shield the inlet and the outlet.

On the other hand, the object of the present invention is a cooling chamber, a gas chamber provided on the upper side of the cooling chamber, both ends of the plurality of first tubes and both ends are respectively provided on the bottom of the gas chamber and the bottom of the cooling chamber is the gas A plurality of second tubes respectively provided on an upper surface of the chamber and a lower surface of the cooling chamber, wherein one surface of the gas chamber shields the opening and at least two openings for providing and discharging water flow into the gas chamber; It can also be achieved by the gas supply unit of the chemical vapor deposition apparatus characterized in that the shielding member is provided.

In this case, the at least two openings are formed in the upper surface of the gas chamber, each 1mm ² It may be formed to have an area above.

According to the present invention, each process gas can be uniformly supplied to the process space, thereby improving wafer deposition quality.

In addition, by removing the foreign matter introduced into the gas chamber during manufacturing of the gas supply unit, it is possible to prevent the phenomenon that the foreign matter falls on the wafer during the growth process, the failure occurs.

1 is a cross-sectional view showing a cross section of a chemical vapor deposition apparatus according to a preferred embodiment of the present invention,
2 is a cross-sectional view showing a cross section of the gas supply unit of FIG.
3 is a flow chart showing a procedure for manufacturing a gas supply unit of the chemical vapor deposition apparatus of FIG.
4 to 10 are cross-sectional views schematically showing the process contents performed in each step of FIG.

Hereinafter, with reference to the drawings, a gas supply unit of the chemical vapor deposition apparatus according to an embodiment of the present invention will be described in detail.

In this embodiment, an organic metal chemical vapor deposition apparatus (MOCVD) for growing a thin film having a lattice structure using an organometallic compound deposition method will be described as an example. However, the present invention is not limited thereto. In addition, the present invention may be applied to various chemical vapor deposition apparatuses which perform a deposition process by reacting a plurality of process gases.

1 is a cross-sectional view showing a cross section of a chemical vapor deposition apparatus according to an embodiment of the present invention.

As shown in FIG. 1, the chemical vapor deposition apparatus 1 supplies first and second process gases G1 and G2 onto the process chamber 10, the susceptor 20, and the susceptor 20. It is configured to include a gas supply unit (100).

The process chamber 10 forms the body of the chemical vapor deposition apparatus 1. A wafer (not shown) is introduced inside to form a process space in which a thin film deposition process is performed. The process chamber 10 remains hermetically sealed to the outside except for a gas flow passage that is actively controlled. In addition, the process chamber 10 is made of a material having excellent thermal insulation so as to effectively control the atmosphere of the process space according to the process contents.

On the other hand, the susceptor 20 is installed in the process space inside the process chamber 10. The upper surface of the susceptor 20 is formed with a plurality of seating portions (not shown) on which the wafer can be seated. Specifically, the seating portion is formed in a shape corresponding to the wafer and has a structure stepped downward from the upper surface of the susceptor 20.

The susceptor 20 may be provided below the susceptor 20 to support the susceptor 20. The susceptor support 30 may be connected to the drive shaft 40 provided below the process chamber 10. In addition, the drive shaft 40 is connected to a motor (not shown). Therefore, the susceptor support 30 and the susceptor 20 may rotate by the rotational force of the motor when the motor rotates. Furthermore, the drive shaft 40 may include an elastic member such as an actuator that can be stretched in the vertical direction, and may be configured to lift the susceptor support 30 and the susceptor 20.

In the present embodiment, the configuration in which the susceptor 20 is rotatable and lifted is described as an example, but the present invention is not limited thereto, and the susceptor 20 is fixed in the process chamber 10. It is also possible to configure to maintain.

On the other hand, a heater 50 for heating the upper surface of the susceptor 20 is provided below the susceptor 20. The heater 50 may use various heaters such as an RF heater or a tungsten heater. As shown in FIG. 1, the heater 50 may be provided inside the susceptor support 30 to uniformly control the temperature of the upper surface of the susceptor 20. Therefore, the wafer 50 mounted on the upper surface of the susceptor 20 may be heated to a high temperature by controlling the heater 50 during the thin film deposition process.

On the other hand, the gas supply unit 100 is connected to an external gas supply source (not shown) to supply a plurality of process gases to the process space. Each process gas supplied by the gas supply unit 100 reacts on the upper side of the susceptor 20 to form a thin film on the wafer.

The gas supply unit 100 according to the present embodiment supplies the first process gas G1 and the second process gas G2. In this case, the first process gas G1 may include a Group 5 compound, and the second process gas G2 may include a Group 3 organometallic compound. Specifically, in the present embodiment, a process gas including ammonia (NH ₃ ) source is used as the first process gas (G1), and a process gas including trimethylgallium (TMGa) is used as the second process gas (G2). . However, the present invention is not limited thereto, and various types of gases may be used according to a process design. In addition, the gas supply unit 100 may include a separate gas supply line for supplying an inert gas in addition to the first and second process gases G1 and G2.

As shown in Figure 1, the gas supply unit 100 according to the present invention is installed on the upper side of the susceptor. Then, the first and second process gases G1 and G2 are injected above the susceptor 20. The injected first process gas G1 and the second process gas G2 react with pyrolysis in a high temperature environment of the process space to form a thin film on the wafer.

In this case, the gas supply unit 100 includes a flow path through which the first process gas G1 is supplied and a flow path through which the second process gas G2 is supplied. The first process gas G1 and the second process gas G2 pass through the gas supply unit 100 in a state in which they are isolated from each other along each flow path, and then are supplied to the process space. Therefore, it is possible to prevent the chemical reaction from occurring before the first process gas G1 and the second process gas G2 are injected into the process space.

2 is a cross-sectional view showing a cross section of the gas supply unit of FIG. Hereinafter, referring to FIG. 2, the gas supply unit 100 of the chemical vapor deposition apparatus 1 will be described in more detail.

As shown in FIG. 2, the gas supply unit 100 includes a first gas chamber 101 and a second gas chamber 102. The first gas chamber 101 and the second gas chamber 102 are each connected to an external gas supply source (not shown). Accordingly, the first gas chamber 101 receives the first process gas G1 and the second gas chamber 102 receives the second process gas G2.

Here, the first gas chamber 101 and the second gas chamber 102 are provided in a stacked form in the vertical direction. The cooling chamber 103 is formed below the first gas chamber 101 and the second gas chamber 102. Inside the cooling chamber 103, a cooling fluid such as cooling water or cooling gas is accommodated. The cooling chamber 103 may block heat from being transferred upward from the high temperature environment of the process space during the deposition process.

On the other hand, the lower surface of the cooling chamber 103 is provided with a spray surface 110 is formed with a plurality of first injection port (111a) and a plurality of second injection port (111b). Each of the plurality of first injection holes 111a is formed to communicate with the first gas chamber 101, and each of the plurality of second injection ports 111b is formed to communicate with the second gas chamber 102. Therefore, the first process gas G1 is supplied from the first gas chamber 101 to the process space through the first injection hole 111a, and the second process gas G2 is supplied from the second gas chamber 102 to the second. It is supplied to the process space through the injection port 111b.

As shown in FIG. 2, the first gas chamber 101 and the second gas chamber 102 are formed by the plurality of tubes 150 and 160 extending downward from the bottom surface thereof, respectively. 2 is connected to the injection port (111b). Here, the first tube 150 extends from the first gas chamber 101 through the cooling chamber 103 to the injection surface 110 to form a flow path through which the first process gas G1 is supplied. The second tube 160 extends from the second gas chamber 102 to the injection surface 110 through the first gas chamber 101 and the cooling chamber 103, so that the second process gas G2 is formed. A flow path to be supplied is formed.

Here, the plurality of first injection holes 111a and the plurality of second injection holes 111b may be uniformly distributed on the injection surface 110, respectively. Therefore, the first process gas G1 and the second process gas G2 are uniformly supplied to the upper surface of the susceptor 20.

The cooling chamber 103, the first gas chamber 101, and the second gas chamber 102 of the gas supply unit 100 may include a plurality of plates 110 and 120 installed on the frame 170 and the frame 170. , 130).

Specifically, the first plate 110 is disposed on the bottom surface of the gas supply unit 100 and is exposed to the process space to form an injection surface on which the process gas is injected.

The second plate 120 is disposed to be spaced apart by a predetermined interval above the first plate 110. Here, the first plate 110 may form a bottom surface of the cooling chamber 103, and the second plate 120 may constitute an upper surface of the cooling chamber 103.

The third plate 130 is disposed spaced apart from each other by a predetermined interval above the second plate 120. Here, the second plate 120 may form a bottom of the first gas chamber 101, and the third plate 130 may constitute an upper surface of the first gas chamber 101.

The top cover 140 is installed above the third plate 130. In addition, a space provided between the third plate 130 and the top cover 140 forms the second gas chamber 102. In the present exemplary embodiment, the upper structure of the second gas chamber is formed using the top cover, but the present invention is not limited thereto, and may be variously configured, such as using a separate frame installed in the frame.

At this time, each plate may be mounted to the inside of the frame 170. The frame 170 forms sidewalls of the first process chamber 10 and the cooling chamber 103. Here, the portion of the plate seated inside the frame 170 can be kept airtight using a separate sealing member (not shown).

Meanwhile, as described above, each of the gas chambers 101 and 102 forms a flow path through which the respective process gases are supplied to the process space by the plurality of tubes 150 and 160. At this time, each tube is installed through at least one plate.

Specifically, as shown in FIG. 2, the plurality of first tubes 150 are installed through the second plate 120. In this case, the upper opening of the first tube 150 communicates with the first gas chamber 101, and the lower opening is connected to the first injection hole 111a formed in the first plate 110. Therefore, the first process gas G1 accommodated in the first gas chamber 101 may be supplied to the process space through the plurality of first tubes 150.

The plurality of second tubes 160 are installed to penetrate the second plate 120 and the third plate 130. In this case, the upper opening of the second tube 160 communicates with the second gas chamber 102, and the lower opening is connected to the first injection hole 111a formed in the first plate 110. Therefore, the second process gas G2 accommodated in the second gas chamber 102 is supplied to the process space through the plurality of second tubes 160.

As such, each plate includes a plurality of through holes so that the first tube 150 and the second tube 160 may be installed through the respective plates.

First, the first plate 110 includes a plurality of first through holes 111 corresponding to the first injection holes 111a and the second injection holes 111b. Since the second plate 120 is installed to penetrate the plurality of first tubes 150 and the plurality of second tubes 160, the second plate 120 has a plurality of patterns in a pattern corresponding to the first injection holes 111a and the second injection holes 111b. The second through hole 121 is formed. Since the third plate 130 is installed to penetrate the plurality of second tubes 160, the plurality of third through holes 131 are formed in a pattern corresponding to the second injection holes 111b.

The gas supply unit 100 having such a structure is brazed in a state in which a plurality of first tubes 150 and a plurality of second tubes 160 are disposed to pass through respective plates. For this reason, the cooling chamber 103, the 1st gas chamber 101, and the 2nd gas chamber 102 can form an airtight structure, and can prevent the phenomenon which a cooling fluid or a process gas leaks to the exterior.

At this time, since the gas supply unit 100 is installed in a form in which at least three plates are stacked, two or more brazing processes are required.

For example, after the plurality of first tubes 150 and the plurality of second tubes 160 are installed to penetrate the first plate 110 and the second plate 120, the first tube 150 and the first tube 150 are formed. The primary brazing is performed by injecting filler metal into the positions of the first through hole 111 and the second through hole 121 through which the second tube 160 penetrates.

The third plate 130 is disposed above the second plate 120, and the upper ends of the plurality of second tubes 160 pass through the third through hole 131 of the third plate 130. . Then, the filler metal is injected into the position of the third through hole 131 to perform the second brazing.

When the brazing process is completed, a process of cutting the lower ends of the first tube 150 and the second tube 160 protruding to the bottom surface of the first plate 110 is performed. In addition, when a heat deformation occurs in the first plate 110 and the lower surface sag during the brazing process, a polishing process for flattening the lower surface of the first plate is performed.

However, foreign materials such as metal chips are introduced into the first gas chamber 101 through the first tube 150 during the cutting or polishing process. In this case, since the brazing process is completed, it is not easy to remove the foreign matter flowing into the first gas chamber 101, and when such foreign matter remains in the first gas chamber 101, the foreign matter on the foreign matter wafer is deposited. Can cause wafer failure.

Therefore, in the present invention, at least two openings 132 are provided on one side wall of the first gas chamber 101. The at least two openings 132 include an inlet 132a through which water flow is injected and an outlet 132b through which the water flow is discharged. In addition, the inlet 132a and the outlet 132b may be used to form a stream of water passing through the first gas chamber, thereby easily removing foreign substances remaining inside the first gas chamber.

Here, the inlet 132a and the outlet 132b may be formed at various positions among one wall surface of the first gas chamber 101. In this embodiment, the inlet 132a and the outlet 132b are provided in the third plate 130 in consideration of ease of manufacture.

Therefore, in addition to the plurality of third through holes 131, the third plate 130 having the inlet 132a and the outlet 132b may be used when the gas supply unit 100 is manufactured. In this case, the injection hole 132a and the discharge hole 132b are processed and formed in a portion where the third through hole 131 is not formed. The inlet 132a and the outlet 132b may be formed of an opening having a larger cross section than the third through hole 131, and may be processed into various shapes according to a pattern in which the third through hole 131 is disposed.

The inlet 132a and the outlet 132b are shielded by a separate shielding member 133 after removing the foreign matter from the first gas chamber 101. In this case, the shielding member 133 may be made of a material having excellent heat resistance and chemical resistance. In the present embodiment, the shielding member 133 is configured by using the same material as that of the third plate 130.

The shield member 133 may be installed in various ways. For example, the shielding member 133 may be welded to the third plate 130 to permanently shield the inlet 132a and the outlet 132b, and the inlet 132a and the fastening member such as a bolt may be used. It is also possible to install so as to selectively open and close the outlet 132b. As such, the first gas chamber 101 forms a closed space by shielding the inlet 132a and the outlet 132b using the shielding member 133.

As such, the gas supply unit 100 according to the present invention discharges foreign substances introduced into the first gas chamber 101 after the brazing process to the outside by using water flow, so that the foreign substances together with the process gas during the thin film deposition process are on the wafer. The phenomenon of falling can be prevented.

However, in the present embodiment, a gas supply unit in which a plurality of plates are installed inside the frame has been described. However, this is only an example and the present invention is not limited to this structure. It is also possible to have a structure in which a circular flange is formed in a vertical direction along the perimeter of each plate without a separate frame so that each plate can be directly stacked. In addition to this, the structure of the gas supply unit can be variously changed. Of course.

Hereinafter, a method of manufacturing the gas supply unit according to the above-described embodiment will be described in detail with reference to FIGS. 3 to 10.

3 is a flowchart illustrating a procedure of manufacturing a gas supply unit of the chemical vapor deposition apparatus of FIG. 2, and FIGS. 4 to 10 are cross-sectional views schematically illustrating processes performed in each step.

First, the first plate 110, the second plate 120, the third plate 130 is processed (S10). Specifically, the first through hole 111 is formed in the first plate 110, the second through hole 121 is formed in the second plate 120, and the third through hole is formed in the third plate 130. Together with 131, an inlet 132a and an outlet 132b are formed. In this case, the injection hole 132a and the discharge hole 132b form an opening having an area larger than that of the third through hole 131, and preferably include an opening having an area of 1 mm ² or more.

When the first to third plates are processed, the first tube 150 and the second tube 160 are installed on the first plate 110 and the second plate 120, and then the first brazing process is performed. (S20, see FIG. 4).

First, the first tube 150 and the second tube 160 are arranged to pass through the first through hole 111 of the first plate 110 and the second through hole 121 of the second plate 120 at the same time. do. Then, the filler metal is injected into the first through hole 111 and the second through hole 121 using an injector such as a piston.

In this case, the filler metal uses a material having excellent heat resistance and chemical resistance so as not to melt or corrode even when exposed to the process space. As an example, in the present embodiment, the primary brazing may be performed using a nickel alloy having a melting point of 1100 ° C. or higher.

After injecting the filler metal, it is carried into a heating furnace and heated to a high temperature of about 1200 ° C. Therefore, while the filler metal is melted in a high temperature environment, the space between the through hole and the tube is filled to form a sealed structure. Thereafter, the cooling chamber 103 is formed by curing the filler metal by exposing it to a low temperature environment.

When the primary brazing is finished, the third plate 130 is installed above the second plate 120 (S30). At this time, the upper end of the second tube 160 is inserted into the third through hole 131 of the third plate 130. Therefore, the third plate 130 may be aligned after the alignment of the upper ends of the third through hole 131 and the second tube 170 using an alignment machine.

Thereafter, secondary brazing is performed between the third plate 130 and the second tube 160 (S40, see FIG. 5). At this time, as in the primary brazing, the filler metal is injected between the second tube 160 and the third through hole 131 using a piston. And it moves to a heating furnace and melts a filler metal. At this time, the molten filler metal fills the space between the second tube 160 and the third through hole 131 to form an airtight structure. The filler metal is cooled to cure the filler metal to form the first gas chamber 101.

In this case, the filler metal used in the secondary brazing process uses a material having a melting point at a lower temperature than the filler metal used in the primary brazing process. As an example, in this embodiment, a filler metal made of an aluminum alloy is used in the secondary brazing process.

In this case, it is possible to melt the aluminum alloy filler metal in a state where the heating furnace is maintained at a temperature of 600 to 700 ° C. Therefore, the phenomenon that the nickel alloy filler material hardened by the primary brazing process is melted again can be prevented.

On the other hand, when the secondary brazing process is completed, the bottom surface of the first plate is processed flat (S50, see Fig. 6). Specifically, the lower ends of the first tube 150 and the second tube 160 protruding to the bottom surface of the first plate 110 are cut. In addition, the bottom surface of the first plate 110 is thermally deformed during the brazing process to polish the drooping portion downward. Therefore, the gas supply unit 100 is processed to have a flat spray surface.

However, foreign materials such as metal chips may be generated and introduced into the first tube 150 and the second tube 160 during the cutting and polishing processes. Therefore, after the cutting and polishing process is finished, a process of cleaning the same is performed (S60).

At this time, the foreign substances located in the first gas chamber 101 may be discharged to the outside by the water flow by forming a water flow inside the first gas chamber 101. Specifically, the supply pipe (S) connected from the water supply source (not shown) is installed in the inlet 132a of the third plate 130. In addition, a drain pipe D is provided at the discharge port. In this case, a sealing member (not shown) may be provided at ends of the supply pipe S and the drain pipe D so as to form a flow path in a state in which airtightness is maintained with the inlet 132a and the outlet 132b, respectively. .

Therefore, when water is supplied through the supply pipe S, water is injected into the first gas chamber 101. For this reason, when the water is filled in the first gas chamber 101, the water is drained through the outlet 132b to form a water flow. As such, by providing the water flow passing through the inside of the first gas chamber 101 for a predetermined time, foreign matter remaining in the inside of the first gas chamber 101 is discharged to the outlet according to the water flow rule.

At this time, since the upper end of the first tube 150 is located inside the first gas chamber 101, as the water is injected into the first gas chamber 101, the first plate 110 is formed through the first tube 150. ) Continuous water outflow to the bottom. In this case, the amount of water required increases and the water pressure discharged through the outlet decreases, so it may be difficult to remove foreign substances. Therefore, it is preferable to configure the passage through the first tube to form a closed passage when removing foreign matter.

Specifically, as shown in FIG. 7, a water tank T may be installed on the bottom surface of the first plate 110. At this time, a sealing member (not shown) is installed between the water tank T and the bottom of the first plate to form a space enclosed by the bottom of the first plate 110.

In such a state, when water flow is supplied into the first gas chamber 101, a predetermined amount of water may flow out of the bottom surface of the first plate 110 through the first tube 150. However, since the bottom surface of the first plate 110 also forms a closed space, water does not flow out, and the supplied water flows through the outlet 132b while the water is filled in the first gas chamber 101 and the water tank T. In this case, foreign matter remaining in the first gas chamber 101 may also be removed through the outlet.

Alternatively, as another embodiment, as shown in FIG. 8, water may be supplied while a separate panel P is installed on the bottom of the first plate 110. At this time, when installing a panel made of a material such as rubber, as the water is supplied to the first gas chamber 101, the first plate 110 presses the panel by its own weight, the lower end of the first tube 150 This is sealed. Accordingly, it is possible to prevent the water injected into the first gas chamber 101 from continuously flowing through the first tube 150.

As described above, although two embodiments have been described, the present invention is not limited to these two embodiments, and various other methods may be applied.

On the other hand, if it is determined that all the foreign matter is discharged by forming a water flow through the interior of the first gas chamber 101 for a predetermined time, the supply of water through the injection hole (132a) is stopped and the inside of the first gas chamber 101 Drain all the water received.

Thereafter, the inlet 132a and the outlet 132b are shielded using the shielding member 133 (S70, see FIG. 9). In this embodiment, the shielding member 133 made of the same material as the third plate 130 is welded to the upper side of the inlet 132a and the outlet 132b to seal the first gas chamber 101. However, this is only one example, and the inlet 132a and the outlet 132b may be shielded by installing the shielding member 133 in various ways.

Then, the top cover 140 is installed above the third plate 130 to form a second gas chamber, thereby completing the gas supply unit according to the present embodiment (S80, see FIG. 10).

As such, the present invention provides a gas supply unit and a method of manufacturing the same, which can uniformly supply the first process gas and the second process gas through the spray surface. In addition, by removing foreign substances introduced into the gas chamber when the gas supply unit is manufactured, defects generated during the wafer deposition process may be minimized.

In the present embodiment, a gas supply unit having a laminated structure of first, second, third plates, and top cover has been described as an example.

10 process chamber 20 susceptor
100: gas supply unit 101: the first gas chamber
102: second gas chamber 103: cooling chamber
132a: inlet 132b: outlet
133: shielding member

Claims (10)

A first plate constituting a bottom surface of the cooling chamber and a second plate provided on an upper side of the first plate and constituting an upper surface of the cooling chamber;
Installing a plurality of first tube and second tube to penetrate the first plate and the second plate,
A third plate is disposed above the second plate to form a gas chamber, and the third plate is disposed such that an upper end of the second tube passes through the third plate;
Flatten the bottom of the first plate through a cutting or polishing process,
Through the inlet and outlet formed on the wall of the gas chamber to form a water flow passing through the gas chamber to remove the foreign matter remaining inside the gas chamber,
The gas supply unit manufacturing method of the chemical vapor deposition apparatus for sealing the inlet and the outlet to seal the gas chamber. The method of claim 1,
The injection port and the discharge port is a gas supply unit manufacturing method of a chemical vapor deposition apparatus, characterized in that provided in the third plate. delete The method according to claim 1 or 2,
The removing of the foreign matter may include installing a water tank on the bottom of the first plate to form a closed space on the bottom of the first plate, and the water flow supplied through the inlet fills the gas chamber and the water tank and through the outlet. The gas supply unit manufacturing method of the chemical vapor deposition apparatus, characterized in that the foreign matter remaining inside the gas chamber while being drained together with the drained water flow. The method according to claim 1 or 2,
The removing of the foreign substances may include installing a separate panel on the bottom of the first plate to seal the lower end of the first tube, and supplying a water stream through the inlet to remove the foreign substances of the chemical vapor deposition apparatus. Method of manufacturing gas supply unit. The method of claim 1,
The injection port and the discharge port is a gas supply unit manufacturing method of a chemical vapor deposition apparatus, characterized in that the opening having an area of 1mm ² or more. The method of claim 1,
And removing the foreign matter, welding the shielding member to the injection hole and the discharge hole to shield the injection hole and the discharge hole. Cooling chamber;
A gas chamber provided above the cooling chamber;
A plurality of first tubes both ends of which are respectively provided on a bottom surface of the gas chamber and a bottom surface of the cooling chamber; And
Both ends include a plurality of second tubes are respectively provided on the upper surface of the gas chamber and the bottom surface of the cooling chamber,
The gas supply unit of the chemical vapor deposition apparatus on one surface of the gas chamber is provided with at least two openings for providing and discharging water flow into the gas chamber and a shielding member for shielding the openings. 9. The method of claim 8,
And the at least two openings are formed on an upper surface of the gas chamber. 9. The method of claim 8,
The gas supply unit of the chemical vapor deposition apparatus, characterized in that the at least two openings are each formed to have an area of 1mm ² or more.

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