KR101213623B1 - A gas supply unit of a chemical vapor deposition apparatus and a method for manufacturing thereof - Google Patents

Abstract

The present invention relates to a method for manufacturing a gas supply unit of a chemical vapor deposition apparatus, comprising: forming a cooling chamber by arranging a second plate on an upper side of a first plate; forming a first tube and a second tube forming a flow path of a process gas; After passing through the first plate and the second plate by brazing with a first filler material, fixing the third plate to the upper side of the second plate so that the upper end of the second tube is inserted into the through hole of the third plate. Forming a first gas chamber by seating, brazing a second filler material between the second tube and the through hole to maintain the airtightness of the first gas chamber, and installing a fourth plate above the third plate And forming a second gas chamber, wherein the first tube forms a supply flow path of the gas accommodated in the first gas chamber, and wherein the second gas chamber is formed. The tube provides a method for manufacturing a gas supply unit of a chemical vapor deposition apparatus that is installed to form a supply flow path of a gas contained in the second gas chamber.
According to the present invention, each process gas can be uniformly supplied to the process space, thereby improving wafer deposition quality, and the brazing required for fabricating the gas supply unit is performed at different temperatures, and thus, by the brazing process. It is possible to minimize the deformation of the gas supply unit generated.

Description

A gas supply unit of a chemical vapor deposition apparatus and a method of manufacturing the same {A GAS SUPPLY UNIT OF A CHEMICAL VAPOR DEPOSITION APPARATUS AND A METHOD FOR MANUFACTURING THEREOF}

The present invention relates to a gas supply unit of a chemical vapor deposition apparatus and a method of manufacturing the same, and more particularly to a gas supply unit of a chemical vapor deposition apparatus for depositing a thin film using at least one or more process gas and a method of manufacturing the same. .

Chemical vapor deposition means a process of forming a thin film on a substrate by using a chemical reaction of a process gas. Therefore, the chemical vapor deposition apparatus supplies at least one highly reactive process gas to the chamber, and uses the light, heat, plasma, microwave, X-ray, or electric field to process the process gas. Activating to form a thin film of good quality on the substrate.

Such a chemical vapor deposition apparatus includes a gas supply unit for supplying a process gas into the process chamber. The gas supply unit supplies heterogeneous process gases using a plurality of injection holes formed in the upper portion of the process chamber. Then, the deposition occurs on the substrate while the reaction occurs between different process gases inside the process chamber. In this case, in order to prevent the reaction from occurring before the plurality of process gases are supplied into the process chamber, the gas supply unit is configured to allow each process gas to proceed along a separate flow path.

However, in the related art, since each process gas is supplied to the process space along a separate flow path, it is difficult to uniformly supply each process gas onto the wafer. Thus, a problem arises in that the thin film is unevenly deposited on the wafer.

The present invention is to form a uniform pattern on the bottom surface of the gas supply unit, each injection port to which different process gases are supplied so as to overcome the above-described problems, each process gas can be uniformly supplied to the process space To provide a gas supply unit of a chemical vapor deposition apparatus.

Furthermore, the present invention is to provide a method for manufacturing a gas supply unit of a chemical vapor deposition apparatus that can minimize the shape deformation caused by a plurality of brazing processes when manufacturing the gas supply unit as described above.

The object of the present invention described above is to form a cooling chamber by arranging a second plate above the first plate, the first tube and the second tube forming a flow path of the process gas to the first plate and the second plate Brazing and fixing with a first filler material after the penetration, and seating the third plate to the upper side of the second plate so that the upper end of the second tube is inserted into the through hole of the third plate to form a first gas chamber Step, brazing between the second tube and the through hole with a second filler material to maintain the airtightness of the first gas chamber and installing a fourth plate above the third plate to form a second gas chamber Wherein the first tube forms a supply flow path of the gas received in the first gas chamber, and the second tube of the gas received in the second gas chamber It can be achieved by the gas supply unit manufacturing method of the chemical vapor deposition apparatus installed to form the supply passage.

Here, the brazing using the second filler material is preferably carried out at a lower temperature than the brazing using the first filler material. Specifically, brazing may be performed at a temperature range of 800 ° C. to 1100 ° C. using the first filler metal, and brazing may be performed at a temperature range of 400 ° C. to 700 ° C. using the second filler material.

Here, a filler material made of an aluminum component can be used as the second filler material.

Furthermore, before the third plate is seated, the method further includes the step of flattening the bottom of the first plate forming the spray surface and removing foreign matter remaining in the first plate and the second plate. Can be done.

Meanwhile, an object of the present invention described above is provided in a first gas chamber for accommodating a first process gas, a second gas chamber installed above the first gas chamber for accommodating a second process gas, and a lower side of the first gas chamber. And a cooling chamber installed adjacent to the process space, the first tube and the second gas chamber being formed so as to penetrate the cooling chamber from the first gas chamber, and forming a flow path through which the first process gas is supplied to the process space. And a second tube installed to penetrate the first gas chamber and the cooling chamber from the first gas chamber and forming a flow path through which the second process gas is supplied to the process space, and an upper surface and a lower surface of the cooling chamber are formed on the first tube. And brazing by the first filler material in a position where the second tube passes, and the bottom surface of the second gas chamber is brazed by a second filler material in the position where the second tube penetrates. It can also be achieved by the gas supply unit of the chemical vapor deposition apparatus being charged.

Here, the first filler material is composed of a material that is melted at 1000 ℃ or more, the second filler material is preferably composed of a material that is melted at a temperature of 800 ℃ or less.

Specifically, the second filler material may be made of an aluminum component.

According to the present invention, each process gas can be uniformly supplied to the process space, thereby improving wafer deposition quality.

In addition, the brazing required for manufacturing the gas supply unit may be performed at different temperatures, thereby minimizing deformation of the gas supply unit generated by the brazing process.

1 is a cross-sectional view showing a cross section of a chemical vapor deposition apparatus according to a preferred embodiment of the present invention,
2 is a cross-sectional view showing a cross section of the gas supply unit of FIG.
3 is a flow chart showing a procedure for manufacturing a gas supply unit of the chemical vapor deposition apparatus of FIG.
FIG. 4 is a cross-sectional view schematically showing the process contents performed in each step of FIG. 3.

Hereinafter, with reference to the drawings, a gas supply unit of the chemical vapor deposition apparatus according to an embodiment of the present invention will be described in detail.

In the present embodiment, a description will be given of a chemical vapor deposition apparatus (MOCVD) using a process gas containing an organometallic compound. However, the present invention is not limited thereto. In addition, the present invention may be applied to various chemical vapor deposition apparatuses which perform a deposition process by reacting a plurality of process gases.

1 is a cross-sectional view showing a cross section of a chemical vapor deposition apparatus according to an embodiment of the present invention.

As shown in FIG. 1, the chemical vapor deposition apparatus may include a process chamber 10, a susceptor 20, and a gas supply unit supplying first and second process gases in a susceptor direction. Can be.

First, the process chamber 10 forms a body of the chemical vapor deposition apparatus 1, and provides a space in which a thin film deposition process for a wafer is performed. In this case, the process chamber 10 may maintain an airtight state with the outside, except for a gas flow passage that is actively controlled to increase deposition efficiency. In addition, the wall of the process chamber 10 may be made of a material having excellent thermal insulation so as to effectively control the atmosphere of the internal space according to the process contents.

On the other hand, the susceptor 20 is installed in the interior space of the process chamber 10. The upper surface of the susceptor 20 may be provided with a plurality of mounting parts (not shown) for mounting the wafer. Here, the seating portion 132 is formed of a groove having a shape corresponding to the size of the wafer, and is formed on the upper surface of the susceptor 20 downwardly, thereby forming a space in which the wafer is seated / received.

The susceptor 20 is installed to be supported by the susceptor support 30. At this time, the susceptor support 30 may be connected to the drive shaft 40 provided at the lower side of the process chamber 10. The drive shaft 40 may be connected to a motor (not shown) and configured to rotate the susceptor support 30 and the susceptor 20 by using the rotational force of the motor. In addition, the drive shaft 40 may be provided to be elevated, and thus the susceptor support 30 and the susceptor 20 may be configured to be elevated.

In addition, a heater 50 for heating the upper surface of the susceptor 20 may be provided below the susceptor 20. As shown in FIG. 1, the heater 50 may be provided inside the susceptor support 30, and may be installed to uniformly control the temperature of the upper surface of the susceptor 20. Therefore, the heater 50 is controlled during the deposition process to create a process atmosphere in which the deposition process may proceed smoothly on the susceptor 20.

On the other hand, the gas supply unit 100 is connected to an external gas supply source (not shown), and is installed to supply the process gas to the process space inside the process chamber 10. In the chemical vapor deposition apparatus 1 according to the present embodiment, a plurality of process gases are reacted to be deposited, and the gas supply unit 100 according to the present embodiment includes the first process gas G1 and the second process gas G2. It can be installed to supply.

As described above, in the present embodiment, the MOCVD process for thin film deposition using the organometallic compound is described using MOCVD. The first process gas G1 includes a Group 5 compound, and the second process gas ( G2) may comprise a Group 3 compound. Specifically, the first process gas G1 may use a gas including an ammonia (NH ₃ ) source, and the second process gas G2 may use a gas including a trimethylgallium (TMGa) source. However, the present invention is not limited thereto, and various types of gases may be used according to a process design. In addition, the gas supply unit 100 may include a gas supply line for supplying a separate inert gas in addition to the first and second process gases, but a description thereof will be omitted for convenience.

As shown in FIG. 1, the gas supply unit 100 according to the present invention is formed above the susceptor 20 to direct the first and second process gases G1 and G2 toward the susceptor 20. It can be configured to spray. The injected first and second process gases form a thin film on the wafer while a chemical reaction occurs in the high temperature environment of the process space heated by the heater.

At this time, the gas supply unit 100 is provided with a flow path for each of the first and second process gas (G1, G2) independently. Therefore, the first process gas G1 and the second process gas G2 are supplied to the process space in a state in which they are isolated from each other along the respective flow paths. Chemical reactions can be prevented from occurring.

2 is a cross-sectional view showing a cross section of the gas supply unit of FIG. Hereinafter, referring to FIG. 2, the gas supply unit 100 of the chemical vapor deposition apparatus 1 according to the present embodiment will be described in more detail.

As shown in FIG. 2, the gas supply unit 100 includes a first gas chamber 101 and a second gas chamber 102. In this case, each gas chamber may be connected to an external gas supply source (not shown). The first process gas G1 flowing from an external gas supply source is accommodated in the first gas chamber 101, and the second process gas G2 is accommodated in the second gas chamber 102.

At this time, the first gas chamber 101 and the second gas chamber 102 form a stacked structure inside the gas supply unit 100. In addition, a plurality of injection holes are formed on the bottom surface of the gas supply unit 100, and the first and second gas chambers 101 and 102 have respective flow paths connected to the injection holes, and the first and second processes are provided through the injection holes. Supply gas.

Here, the gas supply unit 100 is exposed to the process space bottom surface, it may be affected by the high temperature environment of the process space during the process. Accordingly, the first and second gas chambers 101 and 102 in which the process gas is accommodated may be configured to be thermally isolated from such a high temperature environment. In the present embodiment, as an example, a cooling chamber 103 may be provided between a bottom surface of the gas supply unit 100 and a gas chamber inside to move a cooling fluid such as cooling water or cooling gas.

As such, the gas supply unit including the first and second gas chambers 101 and 102 and the cooling chamber 103 is formed by the frame 190 and the plurality of plate structures installed in the frame, wherein The plate may be installed in various ways inside the frame 190.

Specifically, the first plate 110 constitutes a bottom surface of the gas supply unit 100 and forms an injection surface on which the process gas is injected by being exposed to the process space.

The second plate 120 is spaced apart from the first plate 110 by a predetermined interval, and a cooling chamber 103 is formed between the first plate 110 and the second plate 120. In this case, the first plate 110 may form the bottom surface of the cooling chamber 103, and the second plate 120 may form the top surface of the cooling chamber 103.

The third plate 130 is spaced apart from the second plate 120 by a predetermined interval, and the first gas chamber 101 is formed between the second plate 120 and the third plate 130. Here, the second plate 120 may form the bottom surface of the first gas chamber 101, and the third plate 130 may form the top surface of the first gas chamber 101.

On the other hand, the second gas chamber 102 is formed above the third plate 130. At this time, the third plate 130 forms a bottom surface of the second gas chamber 102 and partitions the first gas chamber 101 and the second gas chamber 102. In this case, the upper side of the second gas chamber 102 may be sealed by the fourth plate 140 assembled to the upper side of the frame 170. However, in addition to the fourth plate 140, a separate cap-shaped lead member may be installed to seal the upper side of the second gas chamber 102.

On the other hand, each gas chamber is preferably provided with an independent flow path to supply the respective process gas to the bottom surface of the gas supply unit 100, as described above, in the present embodiment using a plurality of fine tube structure Can make up the flow path.

As shown in FIG. 2, the plurality of first tubes 150 are installed through the first plate 110 and the second plate 120. In this case, the upper opening of the first tube 150 communicates with the first gas chamber 101, and the lower opening is fixed to the first plate to form an injection hole through which the first process gas is supplied. Therefore, the first process gas G1 accommodated in the first gas chamber is supplied to the process space through the first tube 150.

The plurality of second tubes 160 are installed to penetrate the first plate 110, the second plate 120, and the third plate 130. In this case, the upper opening of the second tube 160 communicates with the second gas chamber 102 and is fixedly installed on the lower opening first plate to form an injection hole through which the second process gas G2 is supplied. Therefore, the second process gas G2 accommodated in the second gas chamber is supplied to the process space through the second tube 160.

In this case, the lower end opening of the first tube 150 and the lower end opening of the second tube 160 forming the injection hole of each process gas may be uniformly disposed on the first plate. Therefore, the first process gas G1 and the second process gas G2 may be uniformly supplied to the process space through each injection hole.

Here, a plurality of first through holes 111 are formed in the first plate 110, and a plurality of second through holes 121 are formed in the second plate 120 in a pattern corresponding to the first through holes 111. ) Is formed. In addition, the first tube 150 and the second tube 160 are installed to simultaneously pass through each of the first through holes 111 and the second through holes 121.

On the other hand, the second tube 160 extends longer than the first tube 150 is formed. In addition, a plurality of third through holes 131 are formed in the third plate 130 in a pattern corresponding to the pattern in which the second tube 160 is installed. Therefore, the second tube 160 may be installed to penetrate through the third plate 130 in the form of being inserted into the third through hole 131.

On the other hand, the first, second and third plates are processed to maintain airtightness while the first tube or the second tube is installed through. Therefore, a phenomenon in which the process gas or the cooling fluid of the cooling chamber 103, the first gas chamber 101, and the second gas chamber 102 leaks to the outside can be prevented.

To this end, the first tube 150 and the second tube 160 may be fixed to each plate by a brazing process. That is, in the state where the tube is inserted into the plate, a filler metal made of metal is injected into the through hole of each plate to harden the filler metal, thereby maintaining airtightness of the through hole.

This brazing process is performed by injecting the filler metal at the corresponding position and then exposing it to a high temperature environment at or above the melting point of the filler metal. At this time, the filler metal is melted to fill the space between the through-hole and the tube to maintain airtightness.

The first plate 110, the second plate 120, and the third plate 130 form a stacked structure, and the brazing process is performed at least twice. In the present embodiment, the first tube 150 and the second tube 160 is installed in the first plate 110 and the second plate 120 in the state of the first brazing, Yiwu second tube 160 The second brazing is performed while the upper end of the third plate 130 is inserted into the through hole of the third plate 130.

Here, it is preferable to use different filler materials for the primary brazing and the secondary brazing. Specifically, it is preferable that the primary brazing uses a first filler material that is melted at a relatively high temperature, and the secondary brazing uses a second filler material that is melted at a relatively lower temperature than the first filler material.

The location where the primary brazing takes place includes the part installed adjacent to the process chamber. Therefore, the first filler material should be made of a material that is melted at a temperature higher than the temperature of the process chamber during the process to maintain the cured state from the high temperature process environment during the process. As such, since the primary brazing process is performed at a high temperature above the melting point of the first filler metal, the phenomenon in which the central part sags downward due to thermal deformation during the primary brazing process may occur. In this case, as the heat deformation occurs in the first plate on which the injection hole is formed, a problem may occur in uniformly injecting the process gas into the process space. Therefore, when thermal deformation occurs in the first plate 110 during the primary brazing, a process such as cutting or polishing to planarize the bottom of the first plate 110 may be included.

On the other hand, in the second brazing after the first brazing, when using a filler material of the same material as the first filler material, heat deformation occurs in the gas supply unit 100 as in the primary brazing process. Therefore, a problem may occur in that the durability of the gas supply unit 100 is seriously degraded by two times of heat deformation. In addition, in order to correct deflection of the bottom surface of the first plate 110 generated during the second brazing, the flattening process should be performed again. In this case, foreign substances such as metal dust generated during the flattening process may be removed from the second plate 120. It may flow into the closed space of the three plate 130 may cause a deposition failure of the product during the deposition process.

Therefore, the second filler metal used in the second brazing uses a material having a melting point lower than that of the first filler metal. The second brazing position is thermally isolated from the process chamber by the cooling chamber, so that the second filler material is prevented from being melted during the process even if a second filler material having a melting point lower than the temperature of the process chamber is used during the process. Can be. In addition, it is possible to omit the additional planarization by proceeding the secondary brazing at a temperature such that the additional heat deformation does not occur in the gas supply unit (100).

Further, the second filler material can be selected without considering such properties, whereas the first filler material uses a material having excellent chemical resistance and corrosion resistance. The first filler metal is brazed at the position exposed to the process chamber where the chemical reaction of the process gas occurs, and the material is preferably selected in consideration of chemical resistance and corrosion resistance. In contrast, the second filler metal can be reduced in cost by using a cheaper material without considering such properties.

Specifically, in the present embodiment, a metal having a melting point of 1000 ° C. or higher is used as the first filler metal. Therefore, even when the process chamber temperature is maintained at 1000 ° C. during the process, the first filler metal may not be melted.

At this time, the first filler material is a material having a lower melting point as the material forming the body of the gas supply unit 100. In this embodiment, SUS 316, which is an austenitic stainless steel, is used as the body of the gas supply unit 100, and SUS 316 has a melting point of 1500 ° C or higher. Therefore, in this embodiment, the first filler metal is constituted by using a nickel alloy having a melting point of about 1200 ° C. and excellent in chemical resistance. However, in addition to this as an example, various metal materials satisfying the above-described conditions of the first filler metal may be used.

In this embodiment, a metal having a melting point of 800 ° C. or lower can be used as the second filler material. The gas supply unit 100 is designed to maintain durability even in a deposition process environment of about 1000 ° C. When the second brazing is performed at a temperature of about 800 ° C. or less, thermal deformation hardly occurs. Therefore, it is preferable to comprise a 2nd filler material by using aluminum which has a melting point of about 600 degreeC in this Example. However, it is also possible to use a variety of metal materials satisfying the conditions of the second filler material described above as an example.

As such, the gas supply unit according to the present invention is manufactured through a plurality of brazing processes, and in this case, by applying different filler materials in each brazing process, it is possible to simplify the manufacturing process and minimize thermal deformation of the gas supply unit. That has the advantage.

Hereinafter, the manufacturing method of the above-described embodiment will be described in detail with reference to FIGS. 3 and 4.

FIG. 3 is a flow chart showing a procedure of manufacturing a gas supply unit of the chemical vapor deposition apparatus of FIG.

First, the first to third plates are processed (S10). Specifically, the first through hole 111, the second through hole 121 and the third through hole 131 are formed in the first plate 110 to the third plate 130, respectively. In this case, the first through hole 111 of the first plate and the second through hole 121 of the second plate are formed at positions corresponding to each other. The third through hole 131 of the third plate is formed to correspond to the position where the second tube 160 is installed among the second through holes 121. The first to third through holes may be formed in various ways using a drilling machine, a punching machine, a press working machine, or the like.

When the plate processing is performed, the first tube 150 and the second tube 160 are inserted into the first through hole 111 and the second through hole 121, and then the primary brazing process is performed ( S20, see a of FIG. 4).

In this case, as shown in FIG. 4, the first tube 150 and the second tube 160 are disposed to pass through the first through hole 111 and the second through hole 121 simultaneously. Here, the first tube 150 and the second tube 160 may be disposed in a uniform pattern to uniformly supply the first process gas G1 and the second process gas G2 to the process chamber.

When the first tube 150 and the second tube 160 are disposed, the first filler material made of nickel alloy is injected into the first through hole 111 and the second through hole 121 through which the respective tubes pass. In this case, the first filler metal may be injected by using a piston having a needle-shaped injection hole or a nozzle having a fine injection hole. When the first filler material is injected, it is brought into a vacuum chamber provided separately and heated to a high temperature of about 1200 ℃. Accordingly, while the first filler material is melted in the vacuum chamber, the airtightness of the cooling chamber 103 may be maintained while being filled in the space between the through hole and the tube. The first filler metal is cured by heating to a low environmental temperature after heating for a predetermined time, thereby forming an integral structure.

When the primary brazing process is completed, a process of flattening the bottom surface of the first plate 110 is performed (S30, see b of FIG. 4). Through the primary brazing process, the lower ends of the first tube 150 and the second tube 160 protrude to the bottom surface of the first plate 110. In addition, as described above, a phenomenon in which the bottom surface of the first plate 110 sags downward due to thermal deformation by the primary brazing process may occur. Accordingly, the bottom surface of the first plate 110 is processed to be flat by using a cutting or polishing process, so that the injection surface for injecting the process gas forms a plane.

At this time, foreign matter such as metal dust generated during the planarization may pass through the tube structure to the upper side of the second plate 120. Therefore, after the planarization process is performed, it is possible to proceed with the cleaning process for removing such substances (S40). This is because when the cleaning is not performed sufficiently and foreign matters remain on the second plate, it may cause product defects in the subsequent thin film deposition process. Therefore, it is preferable to proceed with the cleaning operation before the third plate 130 is integrally installed to form a closed space.

When the cleaning operation is completed, the step of installing a third plate on the upper side of the second plate proceeds (S50). In this case, the third plate 130 is seated so that the upper end of the second tube 160 extending upward of the second plate 120 is inserted into the third through hole 131. Therefore, the step may include aligning the position of the third plate 130 and mounting the third plate 130.

Alignment of the third plate 130 may be performed by using an align machine. At this time, the end position of the second tube 160 extending above the second plate 120 is aligned with the position of the third through hole 131.

When the position of the third plate 130 is aligned, the third plate 130 is seated so that the second tube 160 is inserted into the third through hole 131. In this case, the third plate 130 may be supported by the frame 170, or may be seated on the upper side of the second plate 120 using a flange extending downward along the outer circumference of the third plate 130. It is possible. Accordingly, the third plate 130 forms the first gas chamber 101 together with the second plate 120 in a state spaced apart from the second plate 120 at a predetermined interval. In this case, when the third plate 130 is installed, it may be formed to maintain the airtight around the plate by using a separate fastening member (not shown) or a separate sealing member (not shown).

When the third plate 130 is installed, the secondary brazing process is performed between the third through hole and the second tube (S60, see c of FIG. 4). The secondary brazing process may use a second filler material using aluminum. The secondary brazing process takes place in a similar manner to the primary brazing process. That is, the second filler material is introduced into the vacuum chamber while the second filler material is injected between the third through hole 131 and the second tube 160 and heated to a high temperature. However, in this case, the inside of the vacuum chamber is heated to 600˜700 ° C., so that the second filler material is melted while the gas supply unit 100 may not generate additional heat deformation. When the heating process in the vacuum chamber is completed, the second filler material is cured by being exposed to a low environmental temperature, thereby maintaining the airtightness of the first gas chamber.

When the secondary brazing process is completed, the fourth plate 140 is installed above the third plate 130 (S70, see d of FIG. 4). As the fourth plate 140 is installed, the second gas chamber 102 may be formed, and the gas supply unit 100 according to the present embodiment may be completed.

As such, according to the present invention, it is possible to minimize the deformation of the gas supply unit by the brazing process. In addition, by applying inexpensive filler materials in accordance with the characteristics of the brazing position, it is possible to reduce the manufacturing cost.

Claims (8)

Placing a second plate over the first plate to form a cooling chamber;
Brazing the first tube and the second tube forming the flow path of the process gas through the first plate and the second plate and brazing the first filler material;
Forming a first gas chamber by seating the third plate above the second plate such that an upper end of the second tube is inserted into a through hole of the third plate;
Maintaining the airtightness of the first gas chamber by brazing between the second tube and the through hole at a temperature lower than brazing using the first filler material using a second filler material;
And installing a fourth plate above the third plate to form a second gas chamber.
The first tube forms a supply flow path of the gas contained in the first gas chamber, the second tube is gas supply of the chemical vapor deposition apparatus is installed to form a supply flow path of the gas accommodated in the second gas chamber Unit manufacturing method. delete The method of claim 1,
The brazing using the first filler metal is carried out at a temperature of 1000 ℃ or more, the brazing using the second filler material is a gas supply unit manufacturing method of the chemical vapor deposition apparatus, characterized in that proceeds in the temperature range of 400 ~ 700 ℃. The method of claim 1,
The second filler material is a gas supply unit manufacturing method of the chemical vapor deposition apparatus, characterized in that the aluminum component. The method of claim 1,
Before mounting the third plate, further comprising the step of flattening the bottom surface of the first plate forming the spray surface and removing the foreign matter remaining on the first plate and the second plate Method for manufacturing a gas supply unit of a chemical vapor deposition apparatus. A first gas chamber containing a first process gas;
A second gas chamber installed above the first gas chamber to receive a second process gas;
A cooling chamber provided below the first gas chamber and installed adjacent to the process space;
A first tube installed to penetrate the cooling chamber from the first gas chamber and forming a flow path through which the first process gas is supplied to the process space; And
A second tube installed to penetrate the first gas chamber and the cooling chamber from the second gas chamber, and forming a flow path through which the second process gas is supplied to the process space;
The upper and lower surfaces of the cooling chamber are brazed by the first filler material at the position where the first tube and the second tube pass, and the bottom surface of the second gas chamber is connected to the second filler material at the position where the second tube penetrates. Gas supply unit of the chemical vapor deposition apparatus is brazed at a lower temperature than the brazing using the first crayfish. The method according to claim 6,
The first filler material is composed of a material that is melted at 1000 ℃ or more, the second filler material is a gas supply unit of the chemical vapor deposition apparatus, characterized in that composed of a material that is melted at a temperature of 400 ~ 700 ℃. The method according to claim 6,
The gas supply unit of the chemical vapor deposition apparatus, characterized in that the second filler material comprises an aluminum component.

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