KR20120025643A - A gas supply unit of a chemical vapor deposition apparatus and a method for manufacturing thereof - Google Patents

A gas supply unit of a chemical vapor deposition apparatus and a method for manufacturing thereof Download PDF

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Publication number
KR20120025643A
KR20120025643A KR1020100087146A KR20100087146A KR20120025643A KR 20120025643 A KR20120025643 A KR 20120025643A KR 1020100087146 A KR1020100087146 A KR 1020100087146A KR 20100087146 A KR20100087146 A KR 20100087146A KR 20120025643 A KR20120025643 A KR 20120025643A
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KR
South Korea
Prior art keywords
plate
tube
gas
supply unit
hole
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KR1020100087146A
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Korean (ko)
Inventor
안영웅
Original Assignee
엘아이지에이디피 주식회사
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Priority to KR1020100087146A priority Critical patent/KR20120025643A/en
Publication of KR20120025643A publication Critical patent/KR20120025643A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas

Abstract

PURPOSE: A gas supply unit of a chemical vapor deposition apparatus and a manufacturing method thereof are provided to improve wafer deposition quality by uniformly supplying process gas to a process space. CONSTITUTION: A plurality of spraying orifices is formed on a first plate. A second plate is formed on the upper side of the first plate. A sealing member(200) maintains airtight between a second tube and a penetration hole. The upper side of a first tube is connected to a first gas chamber(101). The first gas chamber is formed between the second plate and a third plate(130). The upper side of the second tube is connected to a second gas chamber(102). The second gas chamber is formed on the upper side of the third plate.

Description

GAS SUPPLY UNIT OF A CHEMICAL VAPOR DEPOSITION APPARATUS AND A METHOD FOR MANUFACTURING THEREOF}

The present invention relates to a gas supply unit of a chemical vapor deposition apparatus and a method for manufacturing the same, and more particularly to a gas supply unit of a chemical vapor deposition apparatus for depositing a thin film using at least one or more process gas and a manufacturing method thereof. .

Chemical vapor deposition means a process of forming a thin film on a substrate by using a chemical reaction of a process gas. Therefore, the chemical vapor deposition apparatus supplies at least one highly reactive process gas to the chamber, and uses the light, heat, plasma, microwave, X-ray, or electric field to process the process gas. Activating to form a thin film of good quality on the substrate.

Such a chemical vapor deposition apparatus includes a gas supply unit for supplying a process gas into the process chamber. The gas supply unit supplies heterogeneous process gases using a plurality of injection holes formed in the upper portion of the process chamber. Then, the deposition occurs on the substrate while the reaction occurs between different process gases inside the process chamber. In this case, in order to prevent the reaction from occurring before the plurality of process gases are supplied into the process chamber, the gas supply unit is configured to allow each process gas to proceed along a separate flow path.

However, in the related art, since each process gas is supplied to the process space along a separate flow path, it is difficult to uniformly supply each process gas onto the wafer. Thus, a problem arises in that the thin film is unevenly deposited on the wafer.

The present invention is to form a uniform pattern on the bottom surface of the gas supply unit, each injection port to which different process gases are supplied to overcome the above-mentioned problems, each process gas can be uniformly supplied to the process space To provide a gas supply unit of a chemical vapor deposition apparatus.

Furthermore, the present invention is to provide a method for manufacturing a gas supply unit of the chemical vapor deposition apparatus that can minimize the brazing process while maintaining the airtight of each process gas flow path when manufacturing the gas supply unit as described above.

The object of the present invention described above is a first plate in which a plurality of injection holes are formed, a second plate provided on an upper side of the first plate, and a first end of which both ends are brazed to the first plate and the second plate, respectively. A second tube braze-bonded to the tube, the first plate, and the second plate, the second tube extending upward and a plurality of through-holes through which the second tube penetrates, and is installed on the upper side of the second plate. And a sealing member installed on an upper surface of the third plate and maintaining the airtightness between the through hole and the second tube, wherein an upper end of the first tube is disposed between the second plate and the third plate. A chemical gas is provided to communicate with the first gas chamber is formed, the upper end of the second tube is in communication with the second gas chamber formed on the upper side of the third plate. It is achieved by the gas supply unit of the deposition apparatus.

Here, the sealing member may be made of an O-ring made of an elastic material. At this time, it is preferably configured to further include a cover plate seated on the upper side of the third plate, for pressing the sealing member.

In addition, an upper surface of the third plate may include a seating portion on which the sealing member is seated along the circumference of the through hole. Here, the seating portion preferably forms an inclined surface inclined downward in the through-hole direction.

Meanwhile, an object of the present invention described above is to form a cooling chamber by brazing a first tube and a second tube to penetrate between the first plate and the second plate, and the second tube in the through hole inside the third plate. Seating the third plate on the upper side of the second plate to insert an upper end of the second plate to form a first gas chamber, and a sealing member on the upper side of the third plate to maintain the airtightness between the through hole and the second tube. And installing a cover member on the upper side of the third plate to pressurize the sealing member, and installing a fourth plate on the upper side of the cover member to form a second gas chamber. The first tube forms a supply flow path of gas accommodated in the first gas chamber, and the second tube supplies a supply flow of gas contained in the second gas chamber. It can also be achieved by a method for producing a gas supply unit of a chemical vapor deposition apparatus installed to form a furnace.

Here, it is preferable that the sealing member uses an O-ring made of an elastic material.

Meanwhile, the manufacturing method may further include manufacturing the third plate, and manufacturing the third plate may include forming the through hole in a shape corresponding to the arrangement of the second tube in the third plate. And forming a recess along the circumference of the through hole.

On the other hand, prior to seating the third plate on the upper side of the second plate, it is preferable to further proceed to remove the foreign matter remaining on the upper side of the second plate.

According to the present invention, each process gas can be uniformly supplied to the process space, thereby improving wafer deposition quality.

In addition, since the brazing process can be minimized when manufacturing the gas supply unit, not only the process can be simplified, but also maintenance and repair can be easily performed.

1 is a cross-sectional view showing a cross section of a chemical vapor deposition apparatus according to a preferred embodiment of the present invention,
2 is a cross-sectional view showing a cross section of the gas supply unit of FIG.
3 is an enlarged cross-sectional view of an upper surface of the third plate of FIG. 2;
Figure 4 is a flow chart showing the procedure for manufacturing a gas supply unit of the chemical vapor deposition apparatus of FIG.
FIG. 5 is a cross-sectional view schematically showing the process contents performed in each step of FIG. 4.

Hereinafter, with reference to the drawings, it will be described in detail with respect to the gas supply unit of the chemical vapor deposition apparatus according to a preferred embodiment of the present invention.

In the present embodiment, a description will be given of a chemical vapor deposition apparatus (MOCVD) using a process gas containing an organometallic compound. However, the present invention is not limited thereto. In addition, the present invention may be applied to various chemical vapor deposition apparatuses which perform a deposition process by reacting a plurality of process gases.

1 is a cross-sectional view showing a cross section of a chemical vapor deposition apparatus according to a preferred embodiment of the present invention.

As shown in FIG. 1, the chemical vapor deposition apparatus includes a gas supply unit 100 supplying first and second process gases toward a process chamber 10, a susceptor 20, and a susceptor 20. It may be configured to include).

First, the process chamber 10 forms a body of the chemical vapor deposition apparatus 1, and provides a space in which a deposition process of a wafer proceeds. In this case, the process chamber 10 may maintain an airtight state with the outside, except for a gas flow passage that is actively controlled to increase deposition efficiency. In addition, the wall of the process chamber 10 may be made of a material having excellent heat insulation so as to effectively control the atmosphere of the internal space according to the process contents.

On the other hand, the susceptor 20 is installed in the interior space of the process chamber 10. The upper surface of the susceptor 20 may be provided with a plurality of mounting parts (not shown) for mounting the wafer. Here, the seating portion 132 is composed of a groove formed stepped in a shape corresponding to the size of the wafer, thereby forming a space in which the wafer is seated / accommodated.

The susceptor 20 is installed to be supported by the susceptor support 30. At this time, the susceptor support 30 may be connected to the drive shaft 40 provided at the lower side of the process chamber 10. The drive shaft 40 may be connected to a motor (not shown) and configured to rotate the susceptor support 30 and the susceptor 20 by using the rotational force of the motor. In addition, the drive shaft 40 can be configured to be lifted and lowered so that the susceptor support 30 and the susceptor 20 can be lifted.

The lower side of the susceptor 20 may include a heater 50 for heating the upper surface of the susceptor 20. As shown in FIG. 1, the heater 50 may be provided inside the susceptor support 30, and may be installed to uniformly control the temperature of the upper surface of the susceptor 20. Therefore, the process atmosphere is determined to control the heater 50 during the deposition process so that the deposition process may proceed smoothly on the susceptor 20.

Meanwhile, the gas supply unit 100 may be connected to an external gas supply source (not shown), and supply the process gas to the process space inside the process chamber 10. In the chemical vapor deposition apparatus 1 according to the present embodiment, a plurality of process gases are reacted to be deposited, and the gas supply unit 100 according to the present embodiment includes the first process gas G1 and the second process gas G2. It can be installed to supply.

As described above, in the present embodiment, the MOCVD process for thin film deposition using the organometallic compound is described using MOCVD. The first process gas G1 includes a Group 5 compound, and the second process gas ( G2) may comprise a Group 3 compound. Specifically, the first process gas G1 may use a gas including an ammonia (NH 3 ) source, and the second process gas G2 may use a gas including a trimethylgallium (TMGa) source. However, the present invention is not limited thereto, and various types of gases may be used according to a process design. In addition, the gas supply unit 100 may include a gas supply line for supplying a separate inert gas in addition to the first and second process gases, but a description thereof will be omitted for convenience.

As shown in FIG. 1, the gas supply unit 100 according to the present invention is formed above the susceptor 20 to direct the first and second process gases G1 and G2 toward the susceptor 20. It can be configured to spray. The first and second process gases G1 and G2 form a thin film on the wafer while a chemical reaction occurs in a high temperature environment of a process space heated by a heater.

At this time, the gas supply unit 100 is provided with a flow path for each of the first and second process gas (G1, G2) independently. Therefore, the first process gas G1 and the second process gas G2 are supplied to the process space in a state in which they are isolated from each other along the respective flow paths. Chemical reactions can be prevented from occurring.

2 is a cross-sectional view showing a cross section of the gas supply unit of FIG. Hereinafter, referring to FIG. 2, the gas supply unit 100 of the chemical vapor deposition apparatus 1 according to the present embodiment will be described in more detail.

As shown in FIG. 2, the gas supply unit 100 includes a first gas chamber 101 and a second gas chamber 102. In this case, each gas chamber may be connected to an external gas supply source (not shown). The first process gas G1 flowing from an external gas supply source is accommodated in the first gas chamber 101, and the second process gas G2 is accommodated in the second gas chamber 102.

At this time, the first gas chamber 101 and the second gas chamber 102 form a stacked structure inside the gas supply unit 100. In addition, a plurality of injection holes are formed on the bottom surface of the gas supply unit 100, and the first and second gas chambers 101 and 102 have respective flow paths connected to the injection holes, and the first and second processes are provided through the injection holes. Supply gas.

Here, the gas supply unit 100 is exposed to the process space bottom surface, it may be affected by the high temperature environment of the process space during the process. Accordingly, the first and second gas chambers 101 and 102 in which the process gas is accommodated may be configured to be thermally isolated from such a high temperature environment. In the present embodiment, as an example, a cooling chamber 103 may be provided between a bottom surface of the gas supply unit 100 and a gas chamber inside to move a cooling fluid such as cooling water or cooling gas.

As such, the gas supply unit including the first and second gas chambers 101 and 102 and the cooling chamber 103 is formed by the frame 190 and the plurality of plate structures installed in the frame, wherein The plate may be installed in various ways inside the frame 190.

Specifically, the first plate 110 constitutes a bottom surface of the gas supply unit 100 and forms an injection surface on which the process gas is injected by being exposed to the process space.

The second plate 120 is spaced apart from each other by a predetermined interval on the upper side of the first plate 110. At this time, the cooling chamber 103 is formed between the first plate 110 and the second plate 120. Here, the first plate 110 may form the bottom surface of the cooling chamber 103, and the second plate 120 may form the top surface of the cooling chamber 103.

The third plate 130 is spaced apart from the second plate 120 by a predetermined interval. In this case, a first gas chamber 101 is formed between the second plate 120 and the third plate 130. Here, the second plate 120 may form the bottom surface of the first gas chamber 101, and the third plate 130 may form the top surface of the first gas chamber 101.

On the other hand, the second gas chamber 102 is formed above the third plate 130. At this time, the third plate 130 forms a bottom surface of the second gas chamber 102 and partitions the first gas chamber 101 and the second gas chamber 102. In this case, the upper side of the second gas chamber 102 may be sealed by the fourth plate 150 assembled to the upper side of the frame 190. However, in addition to the fourth plate 150, an additional cap-shaped lead member may be installed to seal the upper side of the second gas chamber 102.

On the other hand, each gas chamber is preferably provided with an independent flow path to supply each process gas to the bottom surface of the gas supply unit 100, as described above, in the present embodiment using a plurality of fine tube structure Can make up the flow path.

As shown in FIG. 2, the plurality of first tubes 170 are installed through the first plate 110 and the second plate 120. At this time, the upper opening of the first tube 170 communicates with the first gas chamber 101, and the lower opening is fixed to the first plate to form an injection hole through which the first process gas is supplied. Therefore, the first process gas received in the first gas chamber is supplied to the process space through the first tube 170.

The plurality of second tubes 180 are installed to penetrate the first plate 110, the second plate 120, and the third plate 130. In this case, the upper opening of the second tube 180 communicates with the second gas chamber 102, and the lower opening is fixed to the first plate to form an injection hole through which the second process gas G2 is supplied. Therefore, the second process gas G2 accommodated in the second gas chamber is supplied to the process space through the second tube 180.

In this case, the lower end opening of the first tube 170 and the lower end opening of the second tube 180 forming the injection hole of each process gas may be uniformly disposed on the first plate. Therefore, the first process gas G1 and the second air gas G2 can be uniformly supplied to the process space through each injection hole.

Here, a plurality of first through holes 111 are formed in the first plate 110, and a plurality of second through holes 121 are formed in the second plate 120 in a pattern corresponding to the first through holes 111. ) Is formed. In addition, the first tube 170 and the second tube 180 are installed to simultaneously pass through each of the first through holes 111 and the second through holes 121.

On the other hand, the second tube 180 is formed to extend longer than the first tube 170. In addition, a plurality of third through holes may be formed in the third plate 130 in a pattern corresponding to a pattern in which the second tube 180 is installed. Therefore, the second tube 180 may be installed to penetrate the third plate 130 in a form of being inserted into the third through hole.

On the other hand, the first, second and third plates are processed to maintain airtightness while the first tube or the second tube is installed through. Therefore, a phenomenon in which the process gas or the cooling fluid of the cooling chamber 103, the first gas chamber 101, and the second gas chamber 102 leaks to the outside can be prevented.

To this end, the first plate 110 and the second plate 120 may be coupled by brazing in a state where the first tube 170 and the second tube 180 are installed therethrough. That is, a filler metal made of a metal is injected into the first through hole 111 and the second through hole 121 and cured to form a metal, thereby forming the first through hole 111 and the second through hole 121. Confidentiality can be maintained.

The upper side of the second tube 180 and the third plate 130 may be configured to maintain airtightness by using a separate sealing member.

If the third plate 130 and the second tube 180 are also coupled by brazing, the first plate 110, the second plate 120, and the third plate 130 form an integrated module. Done. Therefore, even if a crack occurs in the brazed portion of the second plate 120, there is a problem that can not proceed with the repair work. In addition, even if the dust generated in the process of flattening the bottom surface of the first plate 110 after the gas supply unit 100 is introduced into the first gas chamber 101 through the first tube 170 can be removed. This may cause problems that adversely affect the process environment.

On the contrary, the third through hole 131 of the third plate 130 uses the sealing member 200 instead of the brazing method as in the present embodiment, and thus it is possible to selectively separate the third plate 130 if necessary. It is possible. Therefore, in the state where the third plate 130 is removed, the cracked portion of the second plate 120 may be additionally brazed and repaired, and foreign matters such as dust introduced into the first gas chamber 101 may be removed. .

FIG. 3 is an enlarged cross-sectional view of the upper surface of the third plate of FIG. 2. As shown in FIG. 3, in this embodiment, an O-ring may be used as an example of the sealing member 200. In this case, the O-ring may be fitted to the outside of the second tube 180 to be seated at a position adjacent to the third through hole 131.

The third plate 130 includes a mounting portion 132 through which the sealing member 200 may be seated along the circumference of the third through hole 131. The seating part 132 is formed in a circular shape along the circumference of the third through hole 131 to correspond to the shape of the O-ring. In addition, the seating part 132 may be configured to form an inclined surface that is inclined downward in the center direction, that is, in the direction of the third through hole 131. Therefore, the space between the outer circumferential surface of the second tube 180 and the third through hole 131 may be shielded by the sealing member 200 to maintain airtightness.

In this embodiment, more preferably, a separate cover member 140 for pressing the sealing member 200 is further included. When the cover member 140 is seated on the upper side of the sealing member and presses the sealing member 200 downward using its own weight, the sealing member 200 is deformed by the elasticity of the material. At this time, due to the shape of the seating portion 132 inclined downward in the direction of the third through hole 131, the sealing member 200 is deformed in the form of being oriented in the direction of the outer surface of the second tube, thereby more effectively maintaining airtightness. Can be.

As shown in FIG. 3, the cover member 140 according to the present exemplary embodiment may have a plate structure in which a plurality of holes 141 are formed. Then, the second tube is inserted into the hole 141 to be seated on the upper side of the third plate 130 to press the sealing member 200 using its own weight.

However, the cover member of the present embodiment is configured as a plate structure, but this is only an example, it is also possible to configure a small module for pressing each sealing member individually.

In addition, although the lower surface of the lid member is configured in a planar shape in FIG. 3, the pressing portion of the sealing member may be modified so as to form a separate protrusion so as to effectively press the sealing member.

Furthermore, in the present embodiment, the sealing member is configured to press the sealing member by using the weight of the cover member, but the cover member may be coupled using a separate fastening member so that the sealing member may be fastened in a pressurized state.

Hereinafter, the manufacturing method of the above-described embodiment will be described in detail with reference to FIGS. 4 and 5.

FIG. 4 is a flowchart illustrating a procedure of manufacturing a gas supply unit of the chemical vapor deposition apparatus of FIG. 2, and FIG. 5 is a cross-sectional view schematically showing the process performed in each step of FIG. 4.

First, the first plate and the second plate are processed (S10). In this case, a plurality of first through holes 111 is formed in the first plate 110, and a plurality of second through holes 121 is formed in the second plate 120. In this case, the first through hole 111 and the second through hole 121 are formed at positions corresponding to each other. The formation of the through hole can be variously performed using a drilling machine, punching machine or press working machine.

When the first plate 110 and the second plate 120 are processed, the first tube 170 and the second tube 180 are inserted into the first through hole 111 and the second through hole 121. After installation, the brazing process is performed (S20, see a of FIG. 5).

In this case, as shown in FIG. 4, the first tube 170 and the second tube 180 are respectively inserted through the first through hole 111 and the second through hole 121. Here, the first tube 170 and the second tube 180 may be disposed in a uniform pattern so that the first process gas G1 and the second process gas G2 may be uniformly supplied to the process space.

The brazing process is performed by injecting filler metal into the first through hole 111 and the second through hole 121 through which the first tube 170 and the second tube 180 pass. At this time, the filler metal is injected using a piston having a needle-shaped injection hole or a nozzle having a fine injection hole, and then hardened. As a result, the first plate 110, the second plate 120, the first tube 170, and the second tube 180 form an integral structure.

When the brazing process is completed, a process of flattening the bottom surface of the first plate 110 is performed (S30, see FIG. 5B). Since the brazing process is performed in a predetermined high temperature environment, the bottom surface of the first plate 110 may sag downward from the center portion. In addition, the bottom surface of the first plate 110 by the brazing process protrudes the lower end of each tube, or to form a curved surface by the solvent. However, when the bottom surface of the first plate constituting the spraying surface forms a curved surface, it is difficult to create a uniform process environment. Therefore, it is preferable to flatten the bottom surface of the first plate using a cutting or polishing process or the like.

At this time, foreign matters such as metal dust generated during the planarization may flow into the second plate 120 upward through the tube structure. Therefore, it is preferable to proceed with the cleaning process for removing such foreign matters after the planarization process (S40). This is because when the process is performed in a state where the cleaning is not sufficiently performed, foreign matter inside may be deposited on the wafer when the process gas is introduced, which may cause product defects.

As described above, since the gas supply unit according to the present embodiment may selectively remove the third plate 130, it may be possible to proceed with the cleaning process after assembling the third plate 130. However, after the assembly of the third plate 130, it is preferable to proceed with the cleaning process in the step before the third plate assembly to avoid the hassle of dismantling it.

On the other hand, separate from the first plate 110 and the second plate 120 may proceed to the step of manufacturing the third plate 130 (S50). In this case, the manufacturing of the third plate 130 may include forming the third through hole 131 and processing the mounting portion 132 along the circumference of the third through hole 131. Can be.

Here, the forming of the third through hole 131 may be processed using a drilling machine or a punching machine, similarly to the first through hole 111 and the second through hole 121. However, unlike the first through hole 111 or the second through hole 121, the third through hole 131 is formed to correspond to the pattern of the upper end of the second tube, so that only the second tube penetrates.

And, the mounting portion 132 is processed to be formed along the circumference of the third through hole 131 on the upper surface of the third plate 130. In this case, the mounting portion 132 may be processed through a cutting process or the like so as to form a downwardly inclined surface in the center direction of the third through hole 131 at the time of installation.

In this manufacturing example, the processing of the third through hole 131 and the mounting portion 132 are described as separate steps, but this is only an example, and the pressing process or the molding process using the mold of the third through hole and the mounting portion is performed. In the case of proceeding it is also possible to be formed through a single process without separation of steps.

In addition, in the above description after the step of processing and cleaning the first plate 110 and the second plate 120 after integrally brazing, the manufacturing of the third plate is described, but this is for convenience of description. It is to be noted that the order is not intended to limit the time series order of fabrication of the third plate.

On the other hand, after brazing the first plate 110 and the second plate 120 after processing and cleaning, it may proceed to install the third plate 130 above the second plate 120 ( S60, see c of FIG. 5). In this case, the third plate 130 is seated in a form in which the second tube 180 extending upward of the second plate 120 is inserted into the third through hole. Therefore, the present step is configured to include aligning the position of the third plate 130 and mounting the third plate 130.

Alignment of the third plate 130 may be performed by using an align machine. At this time, the position of the end of the second tube 180 extending above the second plate 120 and the position of the third through hole 131 are aligned.

When the position of the third plate 130 is aligned, the third plate 130 is seated in a form in which the second tube 180 is inserted into the third through hole 131. In this case, the third plate 130 may be supported by the frame 190 or may be seated on the upper side of the second plate 120 by using a flange extending downward along the outer circumference of the third plate 130. It is possible. Therefore, the third plate 130 is installed to be spaced apart from the second plate 120 by a predetermined interval, and forms the first gas chamber 101 together with the second plate 120. At this time, when the third plate 130 is installed, a space in which the first gas chamber is sealed may be formed by additionally using a separate fastening member or a separate sealing member.

When the third plate 130 is installed, the sealing member 200 is installed on the upper surface of the third plate 130 (S70, see d of FIG. 5). At this time, the sealing member 200 preferably uses an O-ring. Each sealing member 200 is fitted to a second tube 180 protruding upward of the third plate 130 and seated on the seating portion 132 of the third plate 130.

When the sealing member 200 is installed, the cover member S80 (e) of FIG. 5 may be installed above the third plate 130. In this case, the cover member 140 also includes a plurality of holes 141 formed in a pattern corresponding to the third through hole 131, and is seated while the end of the second tube 180 is inserted into the hole 141. .

At this time, the installed cover member 140 presses the sealing member 200 located in the seating portion 132. In addition, the sealing member 200 pressurized by the cover member 140 may be deformed while being pushed in the direction of the second tube 180 to seal the air gap between the second tube 180 and the third through hole 131. Can be maintained.

Meanwhile, when the cover member 140 is seated, the sealing structure of the second gas chamber 102 may be completed by mounting and fixing the fourth plate 150 to the upper side of the third plate 130 (S90).

As such, in the case of the present embodiment, the brazing process is minimized, and thus it is possible to easily manufacture. In addition, it is possible to dismantle the fourth plate, the third plate, and the like to perform maintenance and cleaning operations of the first gas chamber and the second gas chamber.

Claims (9)

A first plate on which a plurality of injection holes are formed;
A second plate installed above the first plate;
A first tube having both ends brazed to the first plate and the second plate, respectively;
A second tube brazing bonded to the first plate and the second plate, respectively, and extending upward;
A third plate having a plurality of through-holes through which the second tube passes, and installed on an upper side of the second plate; And,
A sealing member installed on an upper surface of the third plate to maintain an airtightness between the through hole and the second tube;
An upper end of the first tube communicates with a first gas chamber formed between the second plate and the third plate, and an upper end of the second tube communicates with a second gas chamber formed above the third plate. Gas supply unit of the chemical vapor deposition apparatus installed to. The method of claim 1,
The sealing member is made of an elastic material, gas supply unit of the chemical vapor deposition apparatus, characterized in that consisting of O-ring (O-ring). The method of claim 1,
The gas supply unit of the chemical vapor deposition apparatus seated on the upper side of the third plate, further comprising a cover plate for pressing the sealing member. The method of claim 1,
The gas supply unit of the chemical vapor deposition apparatus, characterized in that the upper surface of the third plate is formed with a seating portion for mounting the sealing member along the circumference of the through hole. The method of claim 4, wherein
The seating unit gas supply unit of the chemical vapor deposition apparatus, characterized in that for forming a slope inclined downward toward the through-hole direction. Brazing the first tube and the second tube to penetrate between the first plate and the second plate to form a cooling chamber;
Forming a first gas chamber by seating the third plate on the upper side of the second plate such that an upper end of the second tube is inserted into a through hole inside the third plate;
Installing a sealing member on the upper side of the third plate to maintain the airtightness between the through hole and the second tube;
Pressing the sealing member by installing a cover member on an upper side of the third plate; And,
And installing a fourth plate above the cover member to form a second gas chamber.
The first tube is a gas supply of the chemical vapor deposition apparatus is installed to form a supply flow path of the gas contained in the first gas chamber, the second tube is formed to form a supply flow path of the gas accommodated in the second gas chamber. Unit manufacturing method. The method of claim 6,
The sealing member is a gas supply unit manufacturing method of a chemical vapor deposition apparatus, characterized in that using the O-ring (O-ring) made of an elastic material. The method of claim 6,
Further comprising the step of manufacturing the third plate, the step of manufacturing the third plate
Forming the through hole in the third plate in a shape corresponding to the arrangement of the second tube; and
Method of manufacturing a gas supply unit of a chemical vapor deposition apparatus comprising the step of processing the mounting portion along the circumference of the through hole. The method of claim 6,
And prior to seating the third plate on the upper side of the second plate, removing foreign substances remaining on the upper side of the second plate.
KR1020100087146A 2010-09-06 2010-09-06 A gas supply unit of a chemical vapor deposition apparatus and a method for manufacturing thereof KR20120025643A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106601580A (en) * 2015-10-19 2017-04-26 北京北方微电子基地设备工艺研究中心有限责任公司 Air inlet mechanism and reaction cavity
KR20180043005A (en) * 2016-10-19 2018-04-27 주식회사 케이씨텍 Nozzle for spraying co2
CN112292480A (en) * 2018-04-12 2021-01-29 Beneq有限公司 Nozzle head and apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106601580A (en) * 2015-10-19 2017-04-26 北京北方微电子基地设备工艺研究中心有限责任公司 Air inlet mechanism and reaction cavity
KR20180043005A (en) * 2016-10-19 2018-04-27 주식회사 케이씨텍 Nozzle for spraying co2
CN112292480A (en) * 2018-04-12 2021-01-29 Beneq有限公司 Nozzle head and apparatus
CN112292480B (en) * 2018-04-12 2023-03-10 Beneq有限公司 Nozzle head and apparatus

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