KR101141926B1 - A gas supply unit of a chemical vapor diposition apparatus and a method for manufacturing thereof - Google Patents

Abstract

The present invention relates to a gas supply unit of a chemical vapor deposition apparatus and a manufacturing method thereof, wherein a first gas chamber in which a first process gas is accommodated and a second gas chamber in which a second process gas is accommodated are formed in a layered structure. In the gas supply unit of the deposition apparatus, a plurality of first and second injection holes for injecting the first and second process gases, respectively, is formed on the bottom surface, and a plurality of through holes connected to the first and second injection holes on the upper surface, respectively. A first member having a hole formed therein and having a sealing member applied around the through hole, a plate partitioning the first gas chamber and the second gas chamber, and a through hole extending downward from the plate to correspond to the second injection hole; A second member composed of a plurality of tubes mounted on the upper surface of the first member so as to be in communication with the first member and installed to maintain an airtight state by the sealing member, The first gas chamber may be formed between the first member and the second member, and the second gas chamber may provide a gas supply unit of the chemical vapor deposition apparatus formed above the second member.
According to the present invention, the gas supply unit can be configured by only a simple brazing process, thereby reducing the manufacturing cost and manufacturing time, and even if a defect occurs at some positions in the manufacturing process, it is partially replaced and separated. As repairs are possible, it is possible to improve production yields.

Description

Gas supply unit of chemical vapor deposition apparatus and manufacturing method thereof {A GAS SUPPLY UNIT OF A CHEMICAL VAPOR DIPOSITION APPARATUS AND A METHOD FOR MANUFACTURING THEREOF}

The present invention relates to a gas supply unit of a chemical vapor deposition apparatus and a method for manufacturing the same, and more particularly to a gas supply unit of a chemical vapor deposition apparatus for depositing a thin film using at least one or more process gases and a method for manufacturing the same. .

In general, a chemical vapor deposition apparatus injects a highly reactive process gas into a chamber, and activates the process gas using light, heat, plasma, microwave, X-ray, or electric field to produce a high quality thin film on a wafer. It is a device configured to form.

Recently, a chemical vapor deposition apparatus using a gas containing an organometallic compound as a process gas has been used. In this case, the step coverage is excellent, and there is an advantage of less damage to the substrate or the crystal surface. In addition, the deposition process is relatively fast, and the process time can be shortened. Accordingly, the present invention is actively used to manufacture image display devices such as electronic displays and graphics, and memory devices using ferroelectric materials.

In general, such a chemical vapor deposition apparatus has a gas supply unit for supplying a process gas into the process chamber, the gas supply unit is a process gas to the wafer using a plurality of injection holes formed in the upper portion of the process chamber Supply. Then, the reaction is performed between the supplied process gas is deposited on the wafer. At this time, the gas supply unit is configured such that each process gas proceeds along a separate flow path so as to prevent the plurality of process gases from reacting before reaching the wafer.

In detail, a plurality of gas chambers in which respective process gases are accommodated may be formed in a layered structure on the upper side of the process chamber, and a cooling passage layer through which the coolant may proceed may be further provided between the gas chamber and the process chamber. In addition, each gas chamber may supply each process gas by using a plurality of microtube structures extending into the process chamber. At this time, the microtube structure of the process chamber located in the lower layer is configured to penetrate the cooling channel and connected to the process chamber. And connects to the process chamber through the layer.

The conventional gas supply unit described above is manufactured by applying a brazing treatment to a plurality of times using a plate structure and a micro tube structure in which a plurality of through holes are formed so that flow paths through which the respective process gases proceed can be isolated from each other. However, there is a problem that the configuration is very complicated and takes too much time and money. In addition, since the gas supply unit is configured to have an integral configuration by the brazing process, there is a problem that it is impossible to locate and repair the crack when a gas is generated. Furthermore, since the brazing is performed a plurality of times for one structure, it was difficult to select the temperature and the solvent so that the brazing treatment can be performed at a lower temperature than the previous brazing process.

In the present invention, in order to solve the above problems, to provide a gas supply unit of the chemical vapor deposition apparatus that can be manufactured through a simple brazing process.

In addition, when a crack of the brazing process occurs at a predetermined position, to provide a gas supply unit of the chemical vapor deposition apparatus that can be replaced or repaired by removing a part, not all.

The above object of the present invention is to provide a gas supply unit of a chemical vapor deposition apparatus in which a first gas chamber in which a first process gas is accommodated and a second gas chamber in which a second process gas is accommodated are formed in a layered structure. A plurality of first and second injection holes for injecting the first and second process gas, respectively, is formed, a plurality of through holes connected to the first and second injection holes, respectively, is formed on the upper surface, sealing around the through hole A first member to which the member is applied, a plate partitioning the first gas chamber and the second gas chamber, and a plate extending downward from the plate to be in communication with a through hole corresponding to the second injection hole; And a second member including a plurality of tubes installed to maintain an airtight state by the sealing member, wherein the first gas chamber includes the first member and the second member. Formed in the second gas chamber can be achieved by a gas supply unit in the chemical vapor deposition apparatus that is formed on the upper side of the second member.

Here, the first member may be configured such that a plurality of tubes connecting the upper plate, the lower plate, the through hole of the upper plate, and the first and second injection holes of the lower plate are each formed by brazing.

In addition, a cooling passage may be formed between the upper plate and the lower plate of the first member.

Here, the first process gas of the first gas chamber is supplied to the process space along the through hole connected to the first injection hole, and the second process gas of the second gas chamber passes through the tube of the second member. Afterwards it may be supplied to the process space along the through hole connected to the second injection hole.

Specifically, the sealing member is preferably made of a fluorine rubber (viton) material. Further, the tube cross section of the second member is more preferably formed larger than the cross section of the through hole of the first member.

On the other hand, the present invention described above, the first plate is formed with a plurality of injection holes, the second plate provided on the upper side of the first plate and having a plurality of through holes corresponding to the injection hole and the upper surface is coated with a sealing member A plurality of first tubes which are integrally formed between the plate, the first play and the second plate by a brazing process, and connect the injection holes and the through holes, respectively, and are installed on the second plate and formed together with the second plate. A third plate which forms a first gas chamber and simultaneously forms a bottom surface of the second gas chamber, and extends downward from the third plate and is seated on an upper surface of the second plate so as to be connected to the first gas chamber by the sealing member. Chemical vapor deposition including a second tube installed in communication with some of the through holes of the plurality of through holes in a gastight state. It may also be achieved by a gas supply unit of the device.

Here, the gas of the second gas chamber is injected through the injection hole connected to the through-hole which is installed along the second tube in communication with the second tube, the gas of the first gas chamber is It may be injected through the injection hole connected to the through-hole not installed in communication with the second tube.

At this time, the cross section of the lower end of the second tube is preferably formed larger than the cross section of the through-hole communicating with the second tube, and more preferably, the sealing member is formed of a fluororubber (viton) material.

In addition, the above object of the present invention is a step of connecting the plurality of injection holes formed in the first plate and the plurality of through holes formed in the second plate with a plurality of tubes, respectively, brazing, a plurality of formed on the third plate Inserting a plurality of tubes into the through-holes and brazing the same; applying a sealing member to one surface of the second plate; and a lower end of the plurality of tubes of the third plate is partially a plurality of through-holes of the second plate. It may also be achieved by a method for manufacturing a gas supply unit of the chemical vapor deposition apparatus comprising the step of seating on one surface of the second plate so as to maintain the airtight by the sealing member while communicating with the through-hole.

At this time, the injection hole of the first plate and the through hole of the second plate is formed in a position corresponding to each other, the through hole of the third plate is a position corresponding to the through hole of the portion of the through hole of the second plate Can be formed on.

The sealing member applied to the second plate is preferably a sealing member made of a fluororubber material, and a lower end surface of the tube connected to the third plate is a cross section of a through hole formed in the second plate. It is more preferable to form larger.

According to the present invention, it is possible to configure the gas supply unit by a simple brazing process, there is an advantage that can reduce the manufacturing cost and manufacturing time.

In addition, even when a defect occurs in a part of the manufacturing process, it is possible to repair it by partially replacing, separating, and it is possible to improve the production yield.

1 is a cross-sectional view showing a cross section of a chemical vapor deposition apparatus having a gas supply unit according to a preferred embodiment of the present invention;
2 is a cross-sectional view showing a cross section of the gas supply unit of FIG.
3 is a cross-sectional view illustrating a state in which a gas supply unit is separated from FIG. 2;
4 is a flowchart illustrating a method of manufacturing a gas supply unit of the chemical vapor deposition apparatus according to the present embodiment.

Hereinafter, with reference to the drawings, it will be described in detail with respect to the gas supply unit of the chemical vapor deposition apparatus according to a preferred embodiment of the present invention.

In this embodiment, a description will be given of an example of a chemical vapor deposition apparatus (MOCVD) using a process gas containing an organometallic compound. However, the present invention is not limited thereto. In addition, the present invention may be applied to various chemical vapor deposition apparatuses which perform a deposition process by reacting a plurality of process gases.

1 is a cross-sectional view showing a cross section of a chemical vapor deposition apparatus having a gas supply unit according to a preferred embodiment of the present invention.

As shown in FIG. 1, the chemical vapor deposition apparatus 1 includes a process chamber 10, a susceptor 20, and a gas supply unit 100 supplying first and second process gases in a susceptor direction. It can be configured to include.

First, the process chamber 10 forms the body of the chemical vapor deposition apparatus 1, and provides a space in which the deposition process of the wafer proceeds. In this case, the process chamber 10 may be formed to maintain an airtight state with the outside, except for a gas flow passage that is actively controlled to increase deposition efficiency. In addition, the wall of the process chamber 10 may be made of a material having excellent heat insulation so as to effectively control the atmosphere of the internal space according to the process contents.

On the other hand, the susceptor 20 is installed in the interior space of the process chamber 10. The upper surface of the susceptor 20 may be provided with a plurality of mounting parts (not shown) for mounting the wafer. Here, the seating portion may be configured in a shape corresponding to the size of the wafer, and may be formed stepped downward from the upper surface of the susceptor 20 so that each wafer may be seated / received in the seating portion.

In addition, the susceptor 20 may be installed to be supported by the susceptor support 30. In this case, the susceptor support 30 may be connected to the drive shaft 40 provided at the lower side of the process chamber 10. At this time, the drive shaft 40 is connected to the motor (not shown), it may be configured to rotate the susceptor support 30 and the susceptor 20 by using the rotational force of the motor. In addition, the drive shaft 40 may be configured to be elevated, and thus the susceptor support 30 and the susceptor 20 may be elevated according to the process contents.

In addition, a heater 50 for heating the upper surface of the susceptor 20 may be provided below the susceptor 20. As shown in FIG. 1, the heater 50 may be provided inside the susceptor support 30, and may be configured to uniformly control the temperature of the upper surface of the susceptor 20. Therefore, it is possible to create a process atmosphere to control the heater 50 in accordance with the deposition process step so that the deposition process and the like can proceed smoothly on the susceptor 20.

On the other hand, the gas supply unit 100 may be connected to an external gas supply source (not shown) to supply the process gas to the inner space of the process chamber 10. In the chemical vapor deposition apparatus 1 according to the present embodiment, a plurality of process gases are reacted and vapor deposition proceeds. The gas supply unit 100 supplies at least one process gas, and in this embodiment, the first process gas. The gas supply unit 100 for supplying the G1 and the second process gas G2 will be described by way of example.

In the present embodiment, as described above, the MOCVD process using an organometallic compound is used. The first process gas G1 is composed of a gas containing a Group 5 compound, and the second process gas G2 is It can comprise with the gas containing a group 3 compound. In detail, the first process gas G1 may use a gas including an ammonia (NH 3) source, and the second process gas G2 may use a gas including a trimethylgallium (TMGa) source. However, the present invention is not limited thereto, and the process may be configured using various kinds of gases according to the process design and the process step. In addition, the gas supply unit may include a gas supply line for supplying a separate inert gas in addition to the first and second process gases, but a description thereof will be omitted for convenience.

As shown in FIG. 1, the gas supply unit 100 according to the present invention may be formed above the susceptor 20 and configured to inject the first and second process gases toward the susceptor 20. have. In addition, the first and second process gases are deposited while the reaction occurs on the upper side of the susceptor 20 heated by the heater 50.

In this case, in order to prevent mutual reactions from occurring before the first and second process gases arrive on the upper surface of the susceptor 20, the gas supply unit 100 may separate the first and second process gases from each other. After moving in an isolated state, it can be designed to be supplied into the process chamber 10. In addition, the gas supply unit 100 may uniformly distribute the first and second process gases on the susceptor 20 so as to provide uniform deposition conditions to all wafers mounted on the susceptor 20. It is preferable to be configured to be able to spray.

FIG. 2 is a cross-sectional view illustrating a cross section of the gas supply unit of FIG. 1, and FIG. 3 is a cross-sectional view illustrating a state in which the gas supply unit is separated from FIG. 2. Hereinafter, with reference to Figures 2 and 3, it will be described in more detail the gas supply unit of the chemical vapor deposition apparatus according to the present invention.

As shown in FIG. 2, the gas supply unit 100 according to the present invention is configured to introduce a process gas from an external gas supply source. In this case, the first and second process gases are introduced into the gas supply unit 100 along a separate supply path. In addition, a first gas chamber 103 in which the first process gas G1 is accommodated and a second gas chamber 104 in which the second process gas G2 is accommodated are provided inside the gas supply unit 100. The first and second process gases are accommodated separately.

Each process gas accommodated in the gas supply unit 100 may be injected into the process space through a plurality of injection holes 111 formed on the bottom surface of the gas supply unit 100. In addition, the bottom surface of the gas supply unit 100 may be formed in a size and shape corresponding to the top surface of the susceptor 20 so that the process gas may be supplied over the entire top surface of the susceptor 20. In this case, the plurality of injection holes 111 formed on the bottom surface of the susceptor 20 may include the first injection holes 111a for injecting the first process gas G1 and the second injection holes 111b for injecting the second process gas G2. It is preferable that the first and second injection holes are uniformly distributed on the bottom surface of the gas supply unit 100.

Therefore, the gas supply unit 100 has a first gas chamber 103 and the second gas chamber 104 is formed in a layered structure on the upper side of the bottom surface, the first and second injection holes are formed by a tube structure having a fine diameter The first and second gas chambers 103 and 104 may be installed to communicate with each other. At this time, it is preferable to configure a cooling passage 105 through which cooling water or air can flow between the gas chamber and the bottom surface so as to isolate the environment inside the gas chamber from the high temperature environment of the process chamber.

As described above, in the case of the gas supply unit 100 having a layered structure, in order to connect the tubes from each gas chamber to the injection hole, each tube is installed to pass through the cooling channel layer or another gas chamber. At this time, each gas chamber is preferably installed so as to be completely isolated from each other, so as not to react with other process gas inside the gas supply unit before entering the process space.

In the case of the conventional gas supply unit, the gas supply unit is integrally formed by performing a brazing joining process using a molten filler material on the partition walls constituting each layer structure and all connecting portions of the tubes passing therethrough. It consisted of. However, in this case, since the gas supply unit is configured in an integrated structure, when a crack occurs inside, it may be difficult to determine the location of the crack as well as a problem that some replacement use and repair are impossible. In addition, the brazing treatment is performed a plurality of times, there is a risk of warpage caused by thermal expansion during the brazing process, and in the post-brazing process, it is necessary to use a filler material which can be made at a lower temperature than the previous brazing process. It can be difficult to choose.

Therefore, in the present invention, after the brazing treatment for each unit member to overcome this problem, it is possible to configure a gas supply unit that can be kept airtight by the sealing member. Specifically, as shown in FIG. 3, the gas supply unit of the chemical vapor processing apparatus according to the present invention may include a first member 101 and a second member 102.

The first member 101 forms a lower structure of the gas supply unit 100 and includes a plurality of first tubes installed between the first plate 110, the second plate 120, and the first and second plates. And 115.

Here, the first plate 110 forms the bottom surface of the gas supply unit 100. In addition, the plurality of injection holes 111 including the first injection holes 111a and the second injection holes 111b may be uniformly formed therethrough.

In addition, the second plate 120 may be spaced apart from each other by a predetermined interval on the upper side of the first plate 110, and may configure the cooling passage 105 together with the first plate 110. In addition, a plurality of through holes 121 may be formed in the second plate 120 so that the process gas may be supplied from the gas chambers above the cooling passage 105. In this case, the plurality of through holes 121 may be disposed to correspond to the injection holes 111 of the first plate 110.

Meanwhile, the first tube 115 connects the injection hole 111 of the first plate 110 and the through hole 121 of the second plate 120 to supply the first process gas G1 and the first process gas supplied from the upper side. 2 may form a path through which the process gas G2 may move to the first and second injection holes 111a and 111b, respectively. At this time, the upper end of the first tube 115 may be installed at the same height as the upper surface of the first plate 110, or may be installed to protrude a predetermined interval on the upper surface of the first plate (110). At this time, each of the first tube 115 is inserted into the injection hole 111 and the through-hole 121, it is integrally configured through the brazing process to maintain the airtightness of the first, second plate and the joint portion. desirable.

Meanwhile, the second member 102 corresponds to an upper structure of the gas supply unit 100 and includes a third plate 130 and a plurality of second tubes 125 extending downward from the third plate 130. Can be configured.

At this time, the third plate 130 constitutes a partition wall that partitions the first gas chamber 103 and the second gas chamber 104. Accordingly, the first gas chamber 103 may be formed below the third plate 130, and the second gas chamber 104 may be formed above the third plate 130.

In this case, the third plate 130 is formed with a plurality of through holes 131. In addition, the second tube 125 is installed to extend downward from the through-hole 131 of the third plate 130, respectively, and a second process is performed from the second gas chamber 104 above the third plate 130. A path through which the gas G2 travels may be formed. Therefore, the through hole 131 of the third plate 130 and the end of the second tube 125 connected thereto are connected to the second injection hole 111b of the through hole 121 of the second plate 120. It may be disposed to correspond to the through hole 121b. At this time, it is preferable that the joint portions of the third plate 130 and the second tube 125 are integrally formed through the brazing process so as to maintain the airtightness.

In the above-described first and second members 101 and 102, the second member 102 is coupled to an upper portion of the first member 101 to form a gas supply unit 100. The lower end of the second tube 125 of the member 102 is engaged in a form seated on the upper surface of the second plate 120 of the first member 101. At this time, as described above, the lower end of the second tube 125 is seated at a position that can communicate with each of the through holes 121b of the second plate 120 connected to the second injection hole 111b, and thus, a second process. It is preferable to form a passage through which the gas G2 can be supplied.

Here, in the present invention, it is preferable to apply to the upper surface of the second plate 120 using a separate sealing member 132. In this case, the first member 101 and the second member 102 are seated on the sealing member 132 applied to the upper surface of the second plate 120 without the brazing treatment. ) Can be combined while maintaining confidentiality.

Specifically, in the present embodiment, a sealing member 132 made of a fluororubber material may be used as the sealing member 132. Fluorine rubber is very excellent in heat resistance, chemical resistance and aging resistance because of its inert bond of carbon fluorine (C-F). Thus, it is possible to maintain safety even when various process gases and high temperature environments are exposed.

In the present embodiment, after the portion of the upper surface of the second plate 120 other than the through hole 121 is coated with a sealing member 132 made of fluororubber material, the lower end of the second tube 125 of the second member 102 is applied. May be seated on the upper surface of the second plate 120. At this time, the lower end of the second tube 125 is preferably installed to be in communication with the through-hole 121b connected to the second injection hole 111b, as described above, the sealing applied around the through-hole (121b) The member 132 may be coupled to the first gas chamber 103 in a hermetic state. Here, the airtight coupling at the bottom of the second tube 125 may be implemented by the second member 102 to press the sealing member using its own weight, and if necessary, a predetermined heat treatment or chemical treatment may be used for the connecting portion. .

Furthermore, as shown in FIG. 2, the cross section D1 of the lower end of the second tube 125 (denoted by diameter for convenience of description in FIG. 2) is a cross section of the through hole 121b connected to the second injection hole 111b. It is preferable to form larger than (D2). In this case, even if a predetermined installation error occurs when the first and second members 101 and 102 are coupled, the flow path of the second process gas G2 can be stably secured.

By the combination of the first member 101 and the second member 102 described above, the first and second process gases including the first and second gas chambers 103 and 104 having a layered structure and having bottom injection holes are respectively provided. It is possible to configure a gas supply unit 100 that can be injected.

As illustrated in FIG. 2, the cooling passage 105 may be formed along the space between the first and second plates 110 and 120, and may form a space isolated from the gas flow paths through which the process gas is supplied.

The first gas chamber 103 forms a space partitioned by an upper surface of the second plate 120 and a lower surface of the third plate 130. In addition, the first process gas G1 may be introduced from the outside and accommodated inside. In addition, the through-hole 121 of the second plate 120 is installed to be in communication with the through-hole 121a connected to the first injection hole 111a, and the received first process gas G1 receives the first tube 115. ) May be injected into the first injection hole (111a).

The second gas chamber 104 forms a space partitioned by an upper surface of the third plate 130 and a separate partition wall. In addition, the second process gas G2 may be introduced from the outside and received inside. The received second process gas G2 proceeds through the second tube 125 installed in communication with the second gas chamber 104, and then is connected to the lower end of the second tube 125. Through the 115 may be injected into the second injection hole (111b).

As described above, according to the present invention, it is possible to greatly simplify the manufacturing process as compared to the conventional multiple brazing process, and the above-described tactics that can be generated by the multiple brazing are not performed for the structure in which the brazing process is performed. It is possible to avoid one problem. In addition, it is possible to dismantle the first and second members 101 and 102 without damaging the gas supply unit 100. When a crack occurs at a part of the gas supply unit 100, the gas supply unit 100 may be partially replaced.

Furthermore, according to the present invention, the second member 102 can be manufactured by a simpler process. Typical showerheads require heat resistant construction due to the high temperature environment of the process space. However, according to the present invention, the second member 102 has a separate configuration of the first member 101 adjacent to the process space and is thermally insulated from the first member 101 by the sealing member 132. It is also possible to manufacture and use the second member 102 in a manner that does not take heat resistance into consideration. Therefore, in the present exemplary embodiment, the second member is manufactured by brazing the third plate and the second tube made of a material having excellent heat resistance, but in addition to this, various metals or synthetic resins having excellent workability even though the heat resistance is somewhat reduced. It is also possible to manufacture using a material, it is possible to manufacture the second member in a more easy manner, such as manufacturing in an integral molding method without a brazing process.

In the present embodiment, the sealing member 132 using the fluororubber material is described. However, this is only one embodiment, the present invention is not limited to the type of the sealing member, in addition to that it is noted that the technical spirit of the present invention can be implemented by applying various sealing members.

4 is a flowchart illustrating a method of manufacturing a gas supply unit of the chemical vapor deposition apparatus according to the present embodiment. Hereinafter, a method of manufacturing a gas supply unit according to the present invention will be briefly described with reference to FIG. 4.

First, a first member forming a lower structure of the gas supply unit 100 may be manufactured (S1). As described above, the first member 101 may include a first plate 110, a second plate 120, and a plurality of first tubes 115. In this case, a plurality of injection holes 111 are formed through the first plate 110, and a plurality of through holes 121 corresponding to the injection holes 111 are formed in the second plate 120. The plurality of first tubes 115 may be brazed between the first and second plates so as to connect the injection holes 111 of the first plate 110 and the through holes 121 of the second plate 120, respectively. It is formed integrally by the treatment.

In addition, the second member 102 forming the upper structure of the gas supply unit 100 can be manufactured (S2). As described above, the second member 102 may include the third plate 130 and the second tube 125. Here, the third plate 130 is provided with a plurality of through holes 131, which are formed at a position corresponding to some of the through holes 121 b of the through holes 121 of the second plate 120. The second tube 125 may be integrally formed by brazing to be connected to the through hole 131 of the third plate 130.

As such, when the brazing process of the first and second members 101 and 102 is finished, the process of joining the two members is performed (S4). However, as described above, the coupling of the first and second members is preferably performed without a separate brazing process. Therefore, before joining the first and second members, it is preferable to apply the sealing member 132 to the upper surface of the first member 101, that is, the upper surface of the second plate 120, and in this embodiment, fluorine It can be applied using a sealing member 132 made of a rubber material (S3). However, the point of applying the sealing member 132 may proceed immediately after the brazing process of the first member, and may proceed immediately before the joining of the first member and the second member may be performed. It can be selectively changed according to the kind of member.

As such, when the individual processes of the first and second members 101 and 102 are completed, a process of seating and coupling the second member 102 to the upper surface of the first member 101 is performed. At this time, it is preferable that the lower end of the second tube 125 is seated in a position that can communicate with the above-described partial through hole 121b of the second plate 120, and at this time, the second tube 125 by the sealing member 132. The lower end and the upper surface of the first plate 110 can be coupled in a state of maintaining airtightness.

In the above, the manufacturing method of the gas supply unit according to the present invention has been briefly described, but this has been described with reference to the airtight structure between the partition wall of the gas chamber forming the layered structure and the tube structure connecting the same, and the outer pipe of the gas supply unit Of course, a separate process for configuring the connection structure and the outer wall of the gas chamber can be further proceeded.

Claims (14)

In the gas supply unit of the chemical vapor deposition apparatus wherein the first gas chamber in which the first process gas is accommodated and the second gas chamber in which the second process gas is accommodated are formed in a layered structure,
A plurality of first and second injection holes for injecting the first and second process gas, respectively, is formed on the bottom surface, and a plurality of through holes connected to the first and second injection holes are formed on the upper surface, and the periphery of the through hole is formed. A first member to which the sealing member is applied; And,
The sealing plate is formed on the upper surface of the first member so as to communicate with the through hole corresponding to the second injection hole by extending downward from the plate and partitioning the first gas chamber and the second gas chamber. And a second member composed of a plurality of tubes installed to be retained,
The first gas chamber is formed between the first member and the second member and the second gas chamber is formed above the second member,
The first member is chemical vapor deposition, characterized in that the upper plate, the lower plate and the plurality of tubes connecting the through-holes of the upper plate and the first and second injection holes of the lower plate are formed by brazing. Gas supply unit of the device. delete The method of claim 1,
The gas supply unit of the chemical vapor deposition apparatus, characterized in that the cooling passage is formed between the upper plate and the lower plate of the first member. The method of claim 1,
The first process gas of the first gas chamber is supplied to the process space along a through hole connected to the first injection hole, and the second process gas of the second gas chamber passes through the tube of the second member. The gas supply unit of the chemical vapor deposition apparatus, characterized in that supplied to the process space along the through hole connected to the second injection hole. The method of claim 1,
The sealing member is a gas supply unit of the chemical vapor deposition apparatus, characterized in that consisting of a fluorine rubber (viton) material. The method of claim 1,
The gas supply unit of the chemical vapor deposition apparatus, characterized in that the cross section of the tube of the second member is formed larger than the cross section of the through hole of the first member. A first plate on which a plurality of injection holes are formed;
A second plate disposed on an upper side of the first plate and having a plurality of through holes corresponding to the injection hole, and having an upper surface coated with a sealing member;
A plurality of first tubes integrally formed between the first play and the second plate by a brazing process, respectively connecting the injection holes and the through holes;
A third plate disposed above the second plate to form a first gas chamber together with the second plate and to form a bottom surface of the second gas chamber; And,
It extends downward from the third plate, and is mounted on the upper surface of the second plate and installed in communication with some of the through holes of the plurality of through holes in a state of maintaining airtightness with the first gas chamber by the sealing member. Gas supply unit of a chemical vapor deposition apparatus comprising a second tube. The method of claim 7, wherein
The gas of the second gas chamber is injected through the injection hole connected to the some through hole which is installed along the second tube so as to communicate with the second tube, and the gas of the first gas chamber is the second gas. Gas supply unit of the chemical vapor deposition apparatus characterized in that the injection through the injection hole connected to the through-hole not installed in communication with the tube. The method of claim 8,
A cross section of the lower end of the second tube is larger than the cross section of the through-hole communicating with the second tube is a gas supply unit of the chemical vapor deposition apparatus. The method of claim 8,
The sealing member is a gas supply unit of the chemical vapor deposition apparatus, characterized in that formed of fluorine rubber (viton) material. Brazing by connecting a plurality of injection holes formed in the first plate and a plurality of through holes formed in the second plate with a plurality of tubes, respectively;
Inserting a plurality of tubes into the plurality of through holes formed in the third plate to perform brazing;
Applying a sealing member to one surface of the second plate; And,
And seating on one surface of the second plate such that lower ends of the plurality of tubes of the third plate communicate with the through holes of some of the plurality of through holes of the second plate while maintaining airtightness by the sealing member. Method for manufacturing gas supply unit of chemical vapor deposition apparatus. The method of claim 11,
The injection hole of the first plate and the through hole of the second plate are formed at a position corresponding to each other, the through hole of the third plate is formed at a position corresponding to the through hole of the portion of the through hole of the second plate. Method for producing a gas supply unit of the chemical vapor deposition apparatus, characterized in that the. The method of claim 11,
The sealing member applied to the second plate is a gas supply unit manufacturing method of a chemical vapor deposition apparatus, characterized in that for using a sealing member made of a fluorine rubber (viton) material. The method of claim 11,
The lower end surface of the tube connected to the third plate is formed larger than the end surface of the through hole formed in the second plate gas supply unit manufacturing method of the chemical vapor deposition apparatus.

Images