KR102034707B1 - Gas supply method for substrate processing apparatus - Google Patents

Gas supply method for substrate processing apparatus Download PDF

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Publication number
KR102034707B1
KR102034707B1 KR1020150031146A KR20150031146A KR102034707B1 KR 102034707 B1 KR102034707 B1 KR 102034707B1 KR 1020150031146 A KR1020150031146 A KR 1020150031146A KR 20150031146 A KR20150031146 A KR 20150031146A KR 102034707 B1 KR102034707 B1 KR 102034707B1
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South Korea
Prior art keywords
gas
source gas
substrate
purge
reaction gas
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KR1020150031146A
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Korean (ko)
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KR20160108714A (en
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노일호
방승덕
김범준
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주식회사 원익아이피에스
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Abstract

The present invention relates to a substrate processing apparatus, and more particularly, to a gas supply method of a substrate processing apparatus for depositing a thin film on a substrate by supplying a source gas and a reaction gas.
The present invention is a gas supply method of a substrate processing apparatus in which gases are injected in order of injection of source gas, injection of purge gas, injection of reaction gas and injection of purge gas in order to deposit a thin film on a rectangular substrate. A source gas supply step of forming a flow of the source gas in a first flow direction from a first side of the rectangular substrate to a third side opposite to the first side through a source gas injection portion to be injected; A first purge step of forming a flow of purge gas in a second flow direction from the second side of the rectangular substrate perpendicular to the first side to the fourth side opposite to the second side after the source gas supplying step; Wow; A reaction gas supplying step of forming a flow of the reaction gas in the second flow direction after the first purge step through the reaction gas injection unit injecting the reaction gas; And a second purging step of forming a flow of purge gas in the first flow direction after the reaction gas supplying step.

Description

Gas supply method for substrate processing apparatus

The present invention relates to a substrate processing apparatus, and more particularly, to a gas supply method of a substrate processing apparatus for depositing a thin film on a substrate by supplying a source gas and a reaction gas.

The substrate treating apparatus refers to an apparatus for performing a predetermined substrate treatment, such as depositing or etching a thin film on a substrate.

As an example of a substrate processing apparatus, as disclosed in Korean Laid-Open Patent Publication No. 10-2008-0098813, a process chamber for forming a closed processing space, a substrate support portion installed in the process chamber to support a substrate, and a substrate support portion It may be configured to include a gas supply unit for supplying one or more gases in the processing space for performing deposition, etching, etc. to the seated substrate.

More specifically, the conventional substrate processing apparatus may perform a process of depositing a thin film on the surface of a substrate by sequentially supplying a source gas and a reaction gas into a processing space, a so-called atomic layer deposition process.

In this case, the substrate processing apparatus for performing the deposition process by sequentially supplying the source gas and the reaction gas may have various configurations according to the supply structure, the order, and the like of the source gas and the reaction gas.

By the way, the substrate processing apparatus for performing the deposition process by sequentially supplying the source gas and the reaction gas, the quality of the thin film formed according to the supply structure of the source gas and the reaction gas, the flow of the source gas and the reaction gas on the substrate surface, that is The thickness of the thin film over the substrate surface is greatly affected.

It is an object of the present invention to recognize the above points, in order to inject the gas in the source gas supply, the first purge gas supply, the reaction gas supply and the second purge gas supply in order that the source gas and the second purge gas is the first flow The first purge gas and the reactive gas are injected in the second flow direction intersecting the first flow direction, thereby minimizing the distortion of the gas flow when the source gas or the reactive gas is injected immediately after the purge gas is injected. A gas supply method of a substrate processing apparatus capable of depositing a thin film is provided.

The present invention was created in order to achieve the object of the present invention as described above, the present invention, in order to deposit a thin film on a rectangular substrate, injection of the source gas, injection of the purge gas, injection of the reaction gas and injection of the purge gas A gas supply method of a substrate processing apparatus in which furnace gases are injected, the first flow direction of which is directed from a first side of the rectangular substrate to a third side opposite to the first side through a source gas injection unit for injecting the source gas. A source gas supply step of forming a flow of the source gas; A first purge step of forming a flow of purge gas in a second flow direction from the second side of the rectangular substrate perpendicular to the first side to the fourth side opposite to the second side after the source gas supplying step; Wow; A reaction gas supplying step of forming a flow of the reaction gas in the second flow direction after the first purge step through the reaction gas injection unit injecting the reaction gas; And a second purging step of forming a flow of purge gas in the first flow direction after the reaction gas supplying step.

In the source gas supplying step and the second purging step, the source gas and the purge gas are injected in a direction perpendicular to or parallel to the surface of the rectangular substrate near the first side, and flow along the surface of the substrate. It is exhausted in the direction perpendicular to or parallel to the surface of the rectangular substrate near the sides, and the reaction gas and the purge gas in the reaction gas supplying step and the first purge step are perpendicular to the surface of the rectangular substrate near the second side. Alternatively, the liquid crystal may be sprayed in a parallel direction to flow along the surface of the substrate and then exhausted in a direction perpendicular to or parallel to the surface of the rectangular substrate near the fourth side.

In the source gas supply step, an inert gas is supplied to prevent the source gas from flowing into the reaction gas injection unit, and the reaction gas supply step is an inert gas to prevent the reaction gas from flowing into the source gas injection unit. Can be supplied.

A source gas exhaust portion facing the source gas supply portion to exhaust the source gas based on the substrate; a reaction gas exhaust portion facing the reaction gas supply portion relative to the substrate; In the gas supply step, the reaction gas exhaust unit is blocked by a valve so that the exhaust gas is not exhausted through the reaction gas exhaust unit, and the reaction gas supply unit includes the source gas exhaust unit so that the exhaust gas is not exhausted through the source gas exhaust unit. It can be shut off by a valve.

The source gas injection step to the second purge step may be repeated a plurality of times.

The source gas injection step to the second purge step may be injected in a direction perpendicular to or parallel to the surface of the rectangular substrate.

In the gas supply method of the substrate processing apparatus according to the present invention, the source gas and the second purge gas flows in the first flow in order to inject the gas in the order of source gas supply, first purge gas supply, reaction gas supply and second purge gas supply. The first purge gas and the reactive gas are injected in the second flow direction intersecting the first flow direction, thereby minimizing the distortion of the gas flow when the source gas or the reactive gas is injected immediately after the purge gas is injected. There is an advantage to deposit one thin film.

Specifically, in the case of the conventional gas supply method, when the source gas or the reaction gas is injected in a direction perpendicular to the flow direction of the purge gas after the injection of the purge gas, the flow of the source gas or the reaction gas is affected from the flow of the purge gas Vortex is generated, and the generated vortex inhibits the uniformity of gas flow on the substrate, and thus there is a problem that uniform deposition cannot be performed.

However, in the gas supply method according to the present invention, since the source gas or the reaction gas is injected in the same direction as the flow direction of the purge gas after the injection of the purge gas, vortices are not generated and thus a uniform thin film can be deposited.

1 is a cross-sectional view showing an embodiment of a substrate processing apparatus in which a gas supply method according to the present invention is performed.
2 is a cross-sectional view illustrating a state in which an upper chamber and a lower chamber are separated in the substrate processing apparatus of FIG. 1.
3A to 3D are plan views of the substrate processing apparatus of FIG. 1, showing top views of gas ejection procedures.

Hereinafter, a gas supply method according to the present invention will be described with reference to the accompanying drawings.

The substrate processing apparatus to which the gas supply method according to the present invention is applied includes a process chamber 100 forming a closed processing space S, and a process gas 100 installed on the surface of the substrate 10 to purge the source gas and purge. It may include a gas supply for forming a flow of gas in the order of gas, reaction gas and purge gas.

Herein, the substrate 10, which is the object of substrate processing, may have any rectangular shape, and may have a rectangular shape such as an LCD panel substrate or an OLED panel substrate, and may be a thin film formed on the surface thereof.

The process chamber 100 may be configured in various ways as a configuration for forming a closed processing space S for performing a process.

In this case, the process chamber 100, it is preferable that the overall shape of the cube, in particular the planar shape of the rectangular shape in order to perform the process on the rectangular substrate 10.

For example, the process chamber 100 may include an upper chamber 110 having a gas supply unit and a lower chamber 120 detachably coupled to the upper chamber 110 to form a closed processing space S. It may include.

The upper chamber 110 is a configuration in which the gas supply unit 130 is provided, and various configurations are possible according to the installation structure of the gas supply unit.

Meanwhile, the upper chamber 110 may be provided with a mask 172 for performing a patterned deposition process on the substrate 10 or for attaching the substrate 10 to a substrate support (not shown).

The lower chamber 120 is detachably coupled to the upper chamber 110 to form a closed processing space (S) is possible in a variety of configurations.

For example, the lower chamber 120 may include a plurality of lift pins 171 for supporting the substrate 10, and one or more gates for introducing and discharging the substrate 10 (not shown) (the upper portion in the embodiment of the present invention). It may be opened and closed by the movement of the chamber and the lower chamber.

In addition, the lower chamber 120 has been described with reference to an embodiment of directly supporting the substrate 10, but a separate substrate support (not shown) for supporting the substrate may be installed.

In this case, the substrate support may be fixed to the lower chamber 120 or installed to be movable in the vertical direction.

On the other hand, the process chamber 100 may be provided with an alignment unit (not shown) for aligning the substrate or the mask for alignment with the mask.

The gas supply unit is provided in the process chamber 100, especially the upper chamber 110, the source gas and injecting the gas in the order of source gas supply, the first purge gas supply, the reaction gas supply and the second purge gas supply The second purge gas is injected in the first flow direction (X-axis direction in the drawing) and the first purge gas and the reaction gas are configured to spray in the second flow direction (Y-axis direction in the drawing) that intersects the first flow direction. It features.

Here, the source gas may include a precursor such as TMA, and the reaction gas may include a precursor such as H 2 O reacting with the source gas previously injected into the substrate 10.

The gas injection unit includes a source gas flow path forming unit for forming a flow of the source gas in the first flow direction (X-axis direction), and a second flow direction (Y-axis direction) after the source gas is supplied into the processing space S. A first purge gas flow path forming unit configured to form a flow of purge gas into the air; A reaction gas flow passage forming unit for forming a flow of the reaction gas in the second flow direction (Y-axis direction) after the supply of the purge gas; And a second purge gas flow path forming unit for forming a flow of purge gas in the first flow direction (X-axis direction) after the supply of the reaction gas into the processing space S.

The source gas flow path forming unit is configured to form a flow of source gas in a first flow direction (X-axis direction), and various configurations are possible.

For example, the source gas flow path forming unit may include a source gas injection unit 210 for injecting source gas in a direction perpendicular to the surface of the substrate 10 near the first side of the rectangular substrate 10, and the substrate 10. And a source gas exhaust 220 that exhausts the source gas so that the source gas flowing along the surface of the exhaust gas is exhausted in a direction perpendicular to the surface of the rectangular substrate near the third side of the rectangular substrate 10.

The source gas injection unit 210 may be configured to inject various source gases in a direction perpendicular to the surface of the substrate 10 near the first side of the rectangular substrate 10.

For example, as illustrated in FIGS. 1 to 3A, the source gas injection unit 210 may include one or more source gas injection holes 211 formed on the upper surface of the upper chamber 110 and source gas injection holes 211. The source gas diffusion passage 212 formed in the upper chamber 110 to diffuse the injected source gas, and the upper chamber 110 so that the source gas diffused through the source gas diffusion passage 212 is injected into the processing space S. It may include one or more source gas injection port 213 formed on at least one of the bottom and the inner surface of the.

Meanwhile, the source gas injection holes 211 and the source gas injection holes 213 may be formed in plural numbers at intervals in the Y-axis direction on the upper surface of the upper chamber 110, as shown in FIG. 3A.

The source gas exhaust unit 220 exhausts the source gas so that the source gas flowing along the surface of the substrate 10 is exhausted in a direction perpendicular to the rectangular substrate near the third side of the rectangular substrate 10. Configuration is possible.

Here, the exhaust direction may have at least one of an upper direction and a lower direction of the substrate 10.

In addition, the source gas exhaust part 220 is positioned to face the source gas injection part 210 with respect to the substrate 10.

For example, the source gas exhaust unit 220, as shown in FIGS. 1 to 3A, the upper chamber 110 and the lower chamber so that source gas diffused through the source gas diffusion passage 212 is discharged to the outside. One or more source gas discharge ports 213 formed in at least one of the 120 and at least one source gas exhaust port 211 formed in at least one of the upper chamber 110 and the lower chamber 120 and connected to an external exhaust device; , A source gas discharge passage 212 connecting the source gas discharge port 213 and the source gas discharge port 211.

Meanwhile, as illustrated in FIG. 3A, the source gas outlet 213 and the source gas outlet 211 may be formed in plural numbers at intervals in the Y-axis direction from the upper side of the upper chamber 110.

In addition, the source gas outlet 213 and the source gas outlet 211 may be provided with a check valve or the like to prevent the reaction gas from flowing into the source gas outlet 213 and the source gas outlet 211 when the reaction gas is injected. It is preferable to block using.

The second purge gas flow path forming unit is configured to form a flow of purge gas in the first flow direction (X-axis direction) after supply of the reaction gas into the processing space S, and various configurations are possible.

The second purge gas flow path forming unit may have the same or similar configuration as the source gas flow path forming unit described above.

In particular, the second purge gas passage forming unit may receive the source gas or the purge gas through a flow path branched by a check valve or the like before the source gas inlet 211, so that the configuration of the source gas passage forming unit may be used as it is.

The reaction gas flow path forming unit is configured to form a flow of the reaction gas in the second flow direction (Y-axis direction) after the purge gas is supplied, and various configurations are possible.

For example, the reaction gas flow path forming unit may include a reaction gas injection unit 310 for injecting the reaction gas in a direction perpendicular to the surface of the substrate 10 near the second side of the rectangular substrate 10, and the substrate 10. It may include a reaction gas exhaust unit 320 for exhausting the reaction gas so that the reaction gas flowing along the surface of the exhaust gas in a direction perpendicular to the surface of the rectangular substrate 10 near the fourth side of the rectangular substrate 10. .

The reaction gas injection unit 310 may be configured to inject various reaction gases in a direction perpendicular to the surface of the substrate 10 near the second side of the rectangular substrate 10.

For example, as shown in FIGS. 1 to 3A, the reaction gas injection unit 310 may include at least one reaction gas injection hole 311 and a reaction gas injection hole 311 formed on the upper surface of the upper chamber 110. Reaction gas diffusion passage 312 formed in the upper chamber 110 so that the injected reaction gas is diffused, and the upper chamber 110 so that the reaction gas diffused through the reaction gas diffusion passage 312 is injected into the processing space (S) It may include one or more reaction gas injection port 313 formed on at least one of the bottom and the inner surface of the.

Meanwhile, the reaction gas injection holes 311 and the reaction gas injection holes 313 may be formed in plural numbers at intervals in the X-axis direction on the upper surface of the upper chamber 110, as shown in FIG. 3A.

In addition, the reaction gas inlet 311 and the reaction gas injection port 313 is preferably blocked by using a check valve or the like to prevent the source gas from flowing into the reaction gas injection port and the reaction gas exhaust port during injection of the source gas. Do.

The reaction gas exhaust unit 320 may allow the reaction gas flowing along the surface of the substrate 10 to be exhausted in a direction perpendicular to the surface of the rectangular substrate 10 near the fourth side of the rectangular substrate 10. Various configurations are possible as the configuration to exhaust.

Here, the exhaust direction may have at least one of an upper direction and a lower direction of the substrate 10.

In addition, the reaction gas exhaust unit 320 is positioned to face the reaction gas injection unit 310 with respect to the substrate 10.

For example, the reaction gas exhaust unit 320, as shown in Figures 1 to 3a, the upper chamber 110 and the lower chamber so that the reaction gas diffused through the reaction gas diffusion passage 312 is discharged to the outside One or more reaction gas outlets 313 formed in at least one of the 120 and at least one of the upper chamber 110 and the lower chamber 120 and connected to an external exhaust device; , A reaction gas discharge passage 312 connecting the reaction gas discharge port 313 and the reaction gas discharge mechanism 311.

Meanwhile, as illustrated in FIG. 3A, the reaction gas outlet 313 and the reaction gas outlet 311 may be formed in plural numbers at intervals in the Y-axis direction from the upper side of the upper chamber 110.

The first purge gas flow path forming unit is configured to form a flow of purge gas in a second flow direction (Y-axis direction) after supply of the source gas into the processing space S, and various configurations are possible.

The first purge gas flow path forming unit may have the same or similar configuration as the reaction gas flow path forming unit described above.

In particular, the first purge gas flow path forming unit receives the reaction gas or the purge gas through a flow path branched by the check valve or the like before the reaction gas inlet 311, so that the structure of the reaction gas flow path forming unit can be used as it is.

Meanwhile, in the embodiment of the present invention, the source gas, the purge gas and the reaction gas are described as an example in which the injection or exhaust in a direction perpendicular to the surface of the substrate 10, but the injection in a direction parallel to the surface of the substrate 10 Of course, it may be exhausted.

Hereinafter, the gas supply method by the substrate processing apparatus which has the above structure is demonstrated.

In the gas supply method according to the present invention, the source in the first flow direction (X-axis direction) from the first side of the rectangular substrate 10 to the third side opposite to the first side through the source gas injection unit 210 A source gas supply step (S10) for forming a flow of gas; After the source gas supply step S10, the purge gas flows in the second flow direction (Y-axis direction) from the second side of the rectangular substrate 10 perpendicular to the first side to the fourth side opposite to the second side. A first purge step (S20) for forming a; A reaction gas supply step (S30) of forming a flow of the reaction gas in a second flow direction (Y-axis direction) after the first purge step (S20) through the reaction gas injection unit 310; And a second purge step S40 for forming a flow of purge gas in the first flow direction (X-axis direction) after the reaction gas supply step S30.

The source gas supplying step (S10) is a step of forming a flow of source gas in a first flow direction (X-axis direction) from a first side of the rectangular substrate 10 to a third side opposite to the first side. Can be performed by various methods

The first purge step S20 may include a second flow direction from the second side of the rectangular substrate 10 perpendicular to the first side after the source gas supply step S10 toward the fourth side opposite to the second side. As a step of forming a flow of purge gas in the (Y-axis direction), it may be performed by various methods.

The reaction gas supply step S30 is a step of forming a flow of the reaction gas in the second flow direction (Y-axis direction) after the first purge step S20, and may be performed by various methods.

Here, the injection and discharge of the reaction gas in the reaction gas supply step (S30), the same flow path or a separate flow path (except the gas flow flow path on the substrate) of the purge gas injected and discharged by the first purge step (S20) It can be performed by.

The second purge step S40 is a step of forming a flow of purge gas in a first flow direction (X-axis direction) after the reaction gas supply step S30, and may be performed by various methods.

Wherein the injection and discharge of the purge gas in the second purge step (S40), the same flow path or a separate flow path (except the gas flow flow path on the substrate) of the source gas flow injected and discharged by the source gas supply step (S10) It can be performed by.

On the other hand, in the source gas supply step (S10) and the second purge step (S40), the source gas and the purge gas is injected in a direction perpendicular to or parallel to the surface of the rectangular substrate 10 near the first side of the substrate After flowing along the surface of 10, it may be exhausted in a direction perpendicular to or parallel to the surface of the rectangular substrate 10 near the third side.

In addition, the reaction gas and the purge gas in the reaction gas supply step (S30) and the first purge step (S20) is injected in a direction perpendicular to or parallel to the surface of the rectangular substrate 10 near the second side of the substrate. After flowing along the surface of 10, it may be exhausted in a direction perpendicular to or parallel to the surface of the rectangular substrate 10 near the fourth side.

Meanwhile, when the source gas injection step S10 and the reaction gas injection step S30 are performed, source gas or reaction gas may be introduced into another flow path 212 and 312 to form particles in the flow paths 212 and 312. have.

Therefore, in the source gas injection step S10, an inert gas is supplied to prevent the source gas from flowing into the reaction gas injection unit 310, and the reaction gas supply step S30 includes the source gas injection unit 210. Inert gas is preferably supplied to prevent the reaction gas from flowing into).

In addition, the source gas injection step (S10), the reaction gas exhaust port 323 by the valve to prevent the exhaust gas through the reaction gas exhaust port 323 in order to prevent the source gas flows into the reaction gas exhaust port (323) It is preferably carried out in a blocked state.

In addition, the reaction gas supply step (S30), the source gas exhaust port 223 by the valve so that the exhaust through the source gas exhaust port 223 to prevent the reaction gas from flowing into the source gas exhaust port 223 It is preferably carried out in a blocked state.

Meanwhile, the source gas injection step S10 to the second purge step S40 may be repeated a plurality of times.

In addition, the source gas injection step (S10) to the second purge step (S40), the gas may be injected in a direction perpendicular to or parallel to the surface of the rectangular substrate 10.

As described above, the source gas and the second purge gas are injected in the first flow direction and the first purge gas and the reactive gas are injected in the second flow direction intersecting the first flow direction, so that the source immediately after the injection of the purge gas It is possible to deposit a uniform thin film by minimizing the distortion of the gas flow when the gas or reaction gas is injected.

Since the above has been described only with respect to some of the preferred embodiments that can be implemented by the present invention, the scope of the present invention, as is well known, should not be construed as limited to the above embodiments, the present invention described above It will be said that both the technical idea and the technical idea which together with the base are included in the scope of the present invention.

10: substrate 100: process chamber

Claims (6)

A gas supply method of a substrate processing apparatus in which gases are injected in order of injection of a source gas, injection of a purge gas, injection of a reaction gas, and injection of a purge gas to deposit a thin film on a rectangular substrate.
A source gas supply step of forming a flow of the source gas in a first flow direction from a first side of the rectangular substrate to a third side opposite to the first side through a source gas injection unit for injecting the source gas;
A first purge step of forming a flow of purge gas in a second flow direction from the second side of the rectangular substrate perpendicular to the first side to the fourth side opposite to the second side after the source gas supplying step; Wow;
A reaction gas supplying step of forming a flow of the reaction gas in the second flow direction after the first purge step through the reaction gas injection unit injecting the reaction gas;
And a second purge step of forming a flow of purge gas in the first flow direction after the reaction gas supply step. The method according to claim 1,
In the source gas supplying step and the second purging step, the source gas and the purge gas are injected in a direction perpendicular to or parallel to the surface of the rectangular substrate near the first side, and flow along the surface of the substrate. In the vicinity of the side is exhausted in a direction perpendicular or parallel to the surface of the rectangular substrate,
In the reaction gas supplying step and the first purge step, the reaction gas and the purge gas are injected in a direction perpendicular to or parallel to the surface of the rectangular substrate near the second side and flow along the surface of the substrate, and then the fourth The gas supply method of the substrate processing apparatus characterized by the evacuation in the direction perpendicular or parallel to the surface of the rectangular substrate in the vicinity of the side. The method according to claim 1 or 2,
During the source gas supply step, an inert gas is supplied to prevent the source gas from flowing into the reaction gas inlet,
During the reaction gas supply step, inert gas is supplied to prevent the reaction gas from flowing into the source gas injection unit gas supply method of the substrate processing apparatus. The method according to claim 1 or 2,
A source gas exhaust portion opposed to the source gas injection portion is disposed on the basis of the substrate, and a reaction gas exhaust portion opposed to the reaction gas injection portion is disposed on the substrate and exhausted from the reaction gas;
The source gas supply step, the reaction gas exhaust is blocked by the valve so that the exhaust through the reaction gas exhaust,
The reaction gas supplying step, the gas supply method of the substrate processing apparatus, characterized in that the source gas exhaust is blocked by a valve so that the exhaust through the source gas exhaust. The method according to claim 1 or 2,
And the source gas supplying step and the second purging step are repeated a plurality of times. The method according to claim 1 or 2,
The source gas supplying step to the second purge step, the gas supply method of the substrate processing apparatus, characterized in that the injection in the direction perpendicular to or parallel to the surface of the rectangular substrate.
KR1020150031146A 2015-03-05 2015-03-05 Gas supply method for substrate processing apparatus KR102034707B1 (en)

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