KR101590823B1 - Substrate processing apparatus, method of manufacturing semiconductor device and method of supplying and discharging gas - Google Patents

Abstract

An object of the present invention is to suppress the unevenness of the concentration of the process gas supplied to the substrate.
A substrate table including a processing chamber for processing a substrate, a placement surface for placing the substrate in a concentric circle shape, the placement surface being opposed to a ceiling of the processing chamber; A rotation mechanism for rotating the substrate table in a direction parallel to the placement surface; A gas supply unit installed in the process chamber and disposed above the substrate table so that a gas supplied in a direction in which the substrate table is rotated flows; And a gas supply unit provided in the processing chamber and spaced apart from the position of the gas supply unit in a direction in which the substrate table is rotated so that the gas flowing in the direction of rotation of the substrate table is supplied from the gas supply unit, A gas exhaust unit installed above the gas exhaust unit; And a control unit for controlling the gas supply unit, the gas exhaust unit, and the rotation mechanism to supply the reaction gas from the gas supply unit when the substrate is passed through the gas supply unit and the predetermined region formed in the process chamber by the gas exhaust unit And a control unit for controlling the processing of the substrate by exhausting the reaction gas from the gas exhaust unit, wherein the predetermined region is formed above the substrate table and formed between the gas supply unit and the gas exhaust unit, There is a processing region for supplying a reaction gas and a non-processing region for supplying an unreacted gas to the non-reaction gas atmosphere, and the processing region is formed smaller than the non-processing region.

Description

TECHNICAL FIELD [0001] The present invention relates to a substrate processing apparatus, a method of manufacturing a semiconductor device, and a gas dispensing method,

The present invention relates to a method for manufacturing a semiconductor device including a step of processing a substrate, and a substrate processing apparatus for carrying out a process according to a gas supply / discharge method.

There is a case where a substrate processing step for forming a thin film on a substrate is performed as one step of a manufacturing process of a semiconductor device such as a flash memory or a DRAM (Dynamic Random Access Memory). As a substrate processing apparatus for carrying out such a process, there is known a thin film deposition apparatus having a reaction chamber for forming a thin film on a plurality of substrates mounted on a substrate mounting table (see, for example, Patent Document 1).

However, in the conventional structure, there is a case where there is a difference in the amount of the process gas supplied to the substrate between a portion close to the process gas supply portion provided above the center of the substrate table on which a plurality of substrates are mounted and a portion far from the process gas supply portion. Specifically, the gas concentration at a portion close to the process gas supply unit is high, and the gas concentration decreases toward the periphery of the substrate table. As a result, there is a problem that the thickness of the film formed on the substrate becomes larger than that of the periphery of the substrate table, and the film thickness within the surface becomes uneven.

1, Japanese Specification No. 2008-524842

An object of the present invention is to provide a technique in which the concentration of a process gas supplied to a substrate becomes uniform on a surface of a substrate placed on a substrate mount.

According to one aspect of the present invention, there is provided a plasma processing apparatus comprising: a processing chamber for processing a substrate; A substrate table including a placement surface for placing a plurality of substrates in concentric circles, the placement surface of which faces the ceiling of the processing chamber; A rotation mechanism for rotating the substrate table in a direction parallel to the placement surface; A gas supply unit installed in the process chamber and disposed above the substrate table so that a gas supplied in a direction in which the substrate table is rotated flows; And a gas supply unit provided in the processing chamber and spaced apart from the position of the gas supply unit in a direction in which the substrate table is rotated so that the gas flowing in the direction of rotation of the substrate table is supplied from the gas supply unit, A gas exhaust unit installed above the gas exhaust unit; And a control unit for controlling the gas supply unit, the gas exhaust unit, and the rotation mechanism to supply the reaction gas from the gas supply unit when the substrate is passed through the gas supply unit and the predetermined region formed in the process chamber by the gas exhaust unit And a control unit for controlling the processing of the substrate by exhausting the reaction gas from the gas exhaust unit, wherein the predetermined region is formed above the substrate table and formed between the gas supply unit and the gas exhaust unit, There is provided a substrate processing apparatus having a processing region for supplying a reaction gas and a non-processing region for supplying an unreacted gas to the non-reaction gas atmosphere, and the processing region is formed smaller than the non-processing region.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: a step of disposing a plurality of substrates in concentric circles on a substrate table provided in a processing chamber divided into a plurality of regions; A step of rotating the substrate table in which the plurality of substrates are arranged in a concentric shape so as to allow the plurality of regions to pass through the plurality of substrates; And a processing area formed between the gas supply part and the gas exhaust part of the plurality of areas, wherein a rotation direction of the substrate table and a direction from the gas supply part to the gas exhaust part are the same direction and a position opposite to the substrate table And the reaction gas is exhausted from the gas exhaust part provided at a position facing the substrate table in a direction away from the position of the gas supply part in the rotating direction of the substrate table, Reacted gas is supplied to the non-treated region and the non-treated region is set to the non-reactive gas atmosphere in the non-treated region formed between the gas supply unit and the gas exhausting unit among the plurality of regions, And processing the substrate, wherein the processing region is the non- The production of a semiconductor device to be formed smaller methods are provided.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: a step of disposing a plurality of substrates concentrically on a substrate table provided in a processing chamber divided into a plurality of regions; A step of rotating the plurality of concentrically arranged substrates; And supplying the gas from the gas supply unit installed at a position opposite to the substrate table in the same direction as the rotation direction of the substrate table and the gas exhaust unit from the gas supply unit and rotating the substrate table And exhausting the gas from the gas exhausting portion provided at a position opposite to the substrate mounting table, the exhaust gas exhausting method comprising:

According to the above arrangement, the concentration of the processing gas supplied to the substrate can be suppressed from becoming uneven.

1 is a schematic structural view of a substrate processing apparatus according to the present invention;
2 is a schematic structural view of a substrate processing apparatus according to the present invention;
3 is an explanatory diagram of a substrate processing chamber according to the present invention;
4 is an explanatory diagram of a substrate processing chamber according to the present invention;
5 is an explanatory diagram of a substrate processing chamber according to the present invention;
6 is an explanatory diagram of a substrate processing chamber according to the present invention;
7 is a flowchart illustrating a substrate processing process according to the present invention.
8 is a flowchart illustrating a film formation process according to the present invention.

≪ First Embodiment >

(1) Configuration of substrate processing apparatus

First, the configuration of the substrate processing apparatus according to the first embodiment will be described with reference to Fig. Fig. 1 is a schematic configuration diagram of a multi-wafer type substrate processing apparatus 10 according to the first embodiment.

The outline of the substrate processing apparatus according to the first embodiment will be described with reference to Figs. 1 and 2. Fig.

In the substrate processing apparatus according to the first embodiment, a FOUP (hereinafter referred to as a pod) is used as a carrier for transporting a substrate such as a process substrate 200 as a product. In the following description, the front and rear left and right are based on Fig. That is, the direction of X1 shown in FIG. 1 is right, the direction of X2 is left, the direction of Y1 is front, and the direction of Y2 is backward.

As shown in Figs. 1 and 2, the substrate processing apparatus has a first transport chamber 103 configured with a load lock chamber structure capable of withstanding a pressure (negative pressure) below atmospheric pressure such as a vacuum state. The housing 101 of the first transport chamber 103 is formed in a box shape having a pentagonal shape in plan view (in a plan view) and having both ends closed. A first substrate transfer device 112 capable of simultaneously transferring two substrates 200 under a negative pressure is provided in the first transfer chamber 103. Here, the first substrate loader 112 may be capable of transferring a single substrate 200 therebetween. The first substrate transfer device 112 is configured to be able to move up and down while maintaining the airtightness of the first transfer chamber 103 by the first substrate transferor elevator 115.

The preliminary chamber 122 and the preliminary chamber 123, which can be used in combination with the preliminary chamber for carrying-in and the preliminary chamber for carrying-out, are provided on the two sidewalls located on the front side of the five sidewalls of the housing 101, (126), and a gate valve (127), respectively, and are configured to withstand negative pressures. It is also possible to stack two substrates 200 in the standby chamber 122 (load lock chamber) and the standby chamber 123 (load lock chamber) by the substrate support table 140 in a stacked manner.

In the reserve room 122 and the reserve room 123, a partition plate 141 (partition plate, intermediate plate) is provided between the substrates. When a plurality of processed substrates are received in the preliminary chamber 122 or the preliminary chamber 123, the temperature of the lowered state of the processed substrate, which has been accommodated first, It is possible to prevent thermal interference that may be delayed by installing a partition plate.

Here, a technique for increasing the general cooling efficiency will be described. Cooling water, chiller, and the like are allowed to flow through the reserve room 122, the reserve room 123, and the partition plate 141. By adopting such a structure, the wall surface temperature can be suppressed to be low, and the cooling efficiency can be improved even for the processed substrate accommodated in any slot. In the negative pressure, if the distance between the substrate and the partition plate is excessively insulated, the cooling efficiency due to heat exchange is lowered. Therefore, as a technique for improving the cooling efficiency, after mounting on the substrate support (pin) There may be a case where a driving mechanism for bringing the robot into close proximity is provided.

A second transfer chamber 121 used under substantially atmospheric pressure is connected to the front side of the reserve chamber 122 and the reserve chamber 123 via a gate valve 128 and a gate valve 129. A second substrate transfer device 124 is provided on the second transfer chamber 121 to transfer the substrate 200 therefrom. The second substrate transfer device 124 is configured to be moved up and down by the second substrate transfer device elevator 131 installed in the second transfer chamber 121 and to be reciprocated in the left and right direction by the linear actuator 132.

A notch or an orientation flat aligning device 106 may be provided on the left side of the second transport chamber 121 as shown in FIG. 2, a clean unit 118 for supplying clean air is provided in the upper portion of the second transport chamber 121. As shown in Fig.

A substrate loading and unloading port 134 for loading and unloading the substrate 200 to and from the second transport chamber 121 is provided on the front side of the housing 125 of the second transport chamber 121, And a pod opener 108 are installed. A load port 105 (IO stage) is provided on the opposite side of the pod opener 108, that is, on the outside of the housing 125 via the substrate loading / unloading port 134. The pod opener 108 includes a closure 142 capable of closing the substrate loading and unloading port 134 with opening and closing the cap 100a of the pod 100 and a driving mechanism 136 And opens and closes the cap 100a of the pod 100 placed on the load port 105 to allow the substrate 200 to move in and out of the pod 100. [ Further, the pod 100 is made to be fed and discharged to the load port 105 by a not-shown in-process transport apparatus (OHT, etc.).

As shown in FIG. 1, four side walls of the five side walls of the first conveying chamber body 101, which are located on the rear side (rear side and rear side), are provided with a processing furnace 202 Process chamber) is installed. Concretely, the first processing furnace 202a, the second processing furnace 202b, the third processing furnace 202c and the fourth processing furnace 202d are connected via the gate valves 150, 151, 152 and 153 Respectively.

Hereinafter, processing steps using the substrate processing apparatus having the above-described configuration will be described. The following control is controlled by the controller 300 as shown in Figs. The controller 300 controls the entire apparatus in the above configuration.

The substrate 200 is transported by the in-process transport apparatus to the substrate processing apparatus that performs the processing process in a state where a maximum of 25 sheets are accommodated in the pod 100. As shown in Figs. 1 and 2, the pod 100 conveyed is received and placed on the load port 105 from the in-process transportation apparatus. The cap 100a of the pod 100 is removed by the pod opener 108 to open the substrate entrance of the pod 100. [

After the pod 100 is opened by the pod opener 108, the second substrate loader 124 installed in the second transport chamber 121 picks up the substrate 200 from the pod 100. The second substrate transfer unit 124 transfers the substrate 200 to the preliminary chamber 122 and transfers the substrate 200 to the substrate support 140. During this transfer operation, the gate valve 126 on the side of the first transfer chamber 103 of the reserve chamber 122 is closed and the negative pressure in the first transfer chamber 103 is maintained. The gate valve 128 is closed and the preliminary chamber 122 is evacuated to a negative pressure by an exhaust device (not shown). When the substrate 200 is transferred to the substrate support 140, do.

When the preliminary chamber 122 reaches a preset pressure value, the gate valve 126 is opened so that the preliminary chamber 122 and the first transfer chamber 103 are communicated with each other. Subsequently, the first substrate transfer device 112 of the first transfer chamber 103 transfers the substrate 200 from the substrate support table 140 to the first transfer chamber 103. After the gate valve 126 is closed, the gate valve 151 is opened so that the first transfer chamber 103 and the second processing furnace 202b communicate with each other. After the gate valve 151 is closed, a process gas is supplied into the second process furnace 202, and a desired process is performed on the substrate 200.

When the processing for the substrate 200 is completed in the second processing furnace 202b, the gate valve 151 is opened and the substrate 200 is transported to the first transport chamber 103 by the first substrate transfer device 112 do. After being taken out, the gate valve 151 is closed.

The gate valve 127 is opened and the first substrate loader 112 transfers the substrate 200 taken out from the second processing furnace 202b to the substrate support 140 of the preliminary chamber 123, The substrate 200 is cooled.

The processed substrate 200 is transferred to the preliminary chamber 123. When the preliminarily set cooling time has elapsed, the preliminary chamber 123 is returned to the atmospheric pressure by the inert gas. When the reserve chamber 123 returns to approximately atmospheric pressure, the gate valve 129 is opened and the cap 100a of the empty pod 100 placed on the load port 105 is opened by the pod opener 108. [

Subsequently, the second substrate transfer device 124 of the second transfer chamber 121 transfers the substrate 200 from the substrate support 140 to the second transfer chamber 121, and transfers the substrate 200 in the second transfer chamber 121 And is stored in the pod 100 through the outlet port 134.

Here, the cap 100a of the pod 100 may be continuously empty until a maximum of 25 substrates are transported, or may be transported to a pod carrying the substrate without storing it in the empty pod 100.

By repeating the above operation, the cab 100a of the pod 100 is closed by the pod opener 108 when the completed processing of the 25 sheets of processed substrates 200 into the pod 100 is completed. The closed pod 100 is transported from the load port 105 by the in-process transport apparatus in the next process.

Although the above operation has been described taking the case where the second processing furnace 202b, the spare room 122 and the reserve room 123 are used as an example, the first processing furnace 202a and the third processing furnace 202c, The same operation is performed for the case where the processing path 202d is used.

Although four treatment chambers have been described herein, the number of treatment chambers may be determined depending on the type of the substrate or the film to be formed.

In the substrate processing apparatus described above, the preparatory chamber 122 is used for carrying-in and the preparatory chamber 123 is used for carrying-out. However, the preparatory chamber 123 may be used for carrying-in and the preparatory chamber 122 may be used for carrying- The preliminary chamber 122 or the preliminary chamber 123 may be used in combination for carrying in and carrying out.

By making the preparatory chamber 122 or the preparatory chamber 123 dedicated to carry-in and carry-out, it is possible to reduce cross contamination, and concomitant use can improve the conveying efficiency of the substrate.

The same processing may be performed in all processing stages, or different processing may be performed in each processing stage. For example, in the case where different processing is performed in the first processing path 202a and the second processing path 202b, after the processing in the substrate 200 is performed in the first processing path 202a, Another processing may be performed in the processing unit 202b. The preliminary chamber 122 or the preliminary chamber 123 may be passed through when the processing in the substrate 200 is performed in the first processing furnace 202a and the other processing is performed in the second processing furnace 202b .

The processing may be performed by connecting at least one of the processing furnace 202a and the processing furnace 202b to two or more processing furnaces 202c and 202d, It may be connected at several places if it is a possible combination in a range of a maximum of four places of the antennas 202a to 202d.

The number of substrates processed by the apparatus may be one or more. Likewise, the substrate to be cooled in the spare room 122 or 123 may be one or more than one. The number of the substrates that can be processed may be any combination as long as they are within a range of up to five sheets which can be inserted into the slots of the reserve chamber 122 and the reserve chamber 123. [

Further, the processing of the substrate may be performed by opening and closing the gate valve of the reserve chamber 122 while carrying the processed substrate in the reserve chamber 122 and performing cooling, and bringing the substrate into the processing furnace. The processing of the substrate may be carried out by opening and closing the gate valve of the reserve chamber 123 and bringing the substrate into the processing furnace in the course of performing the cooling by carrying the processed substrate in the reserve chamber 123.

When the gate valve 128 and the gate valve 129 on the side of the ambient air are opened without a sufficient cooling time, the radiant heat of the substrate 200 causes the preliminary chamber 122, the preliminary chamber 123, There is a possibility of damaging the electric parts connected to the periphery. Therefore, in the case of cooling a high-temperature substrate, the substrate having the large radiant heat processed in the preliminary chamber 122 is carried into the preliminary chamber 122 to open and close the gate valve of the preliminary chamber 123, The processing of the substrate can be performed. Similarly, the processing of the substrate can be performed by opening and closing the gate valve of the reserve chamber 122 while carrying the processed substrate in the reserve chamber 123 to carry out the cooling, and bringing the substrate into the processing furnace.

(2) Configuration of process chamber

Next, the construction of the process chamber 202 as the processing furnace according to the first embodiment will be described mainly with reference to Figs. 3 to 6. Fig. The process chamber 202 is, for example, the above-described first processing furnace 202b. 3 is a schematic cross-sectional view of the processing furnace according to the first embodiment. Fig. 4 is an explanatory view for explaining a specific structure of the processing furnace according to the first embodiment, Fig. 5 is a longitudinal sectional view taken along the line A-B in Fig. 4, and Fig. 6 is a longitudinal sectional view taken along the line A-C in Fig.

[Reaction vessel]

As shown in Figs. 3 to 6, the process chamber 202 as a process furnace is provided with a reaction container 203 which is a tubular airtight container. A processing chamber, which is a processing space 207 of the substrate 200, is formed in the reaction vessel 203. On the upper side of the processing space 207 in the reaction vessel 203, four partition plates 205 extending radially from the central portion are provided. The four partition plates 205 as the partitioning portion divides the processing space 207 into four regions: a first processing region 201a, a first purifying region 204a, a second processing region 201b, Region 204b. ≪ / RTI > In other words, the processing region and the purge region are arranged in the adjacent state.

The first processing region 201a, the first purge region 204a, the second processing region 201b and the second purge region 204b are formed along the rotating direction of the susceptor 217 (substrate mounting table) Are arranged in order.

Specifically, the partition plate 205 is disposed as follows. The partition plate 205a is installed upstream of the first processing area and between the first processing area 201a and the second purifying area 204b. The partition plate 205b is disposed downstream of the first processing region and between the first processing region 201a and the first purge region 204a. The partition plate 205c is disposed upstream of the second processing area and between the first purge area 204a and the second processing area 201b. The partition plate 205d is disposed downstream of the second processing area and between the second processing area 201b and the second purge area 204b.

The substrate 200 placed on the susceptor 217 by rotating the suscepter 217 as described later has a first processing region 201a, a first purge region 204a, a second processing region 201b ), And the second purge region 204b. As described later, a first processing gas as a first gas (reaction gas) is supplied into the first processing region 201a, and a second processing gas as a second gas (reaction gas And an inert gas (non-reactive gas) is supplied in the first purge region 204a and the second purge region 204b. Therefore, by rotating the susceptor 217, the first process gas, the inert gas, the second process gas, and the inert gas are supplied in this order on the substrate 200. The structure of the susceptor 217 and the gas supply system will be described later.

The gap between the end of the partition plate 205 and the sidewall of the reaction vessel 203 and between the bottom of the partition plate 205 and the susceptor 217 (the susceptor) ), And the gas can pass through the gap. An inert gas is ejected from the first purge region 204a and the second purge region 204b toward the first process region 201a and the second process region 201b through the gap. By doing so, the intrusion of the processing gas into the first purge region 204a and the second purge region 204b can be suppressed, and the reaction due to the mixing of the processing gas can be prevented.

In the first embodiment, the angles between the partition plates 205 are set to 90 degrees, but the present invention is not limited thereto. The angle between the two partitioning plates 205 forming the second processing region 201b may be increased in consideration of the supply time of various gases to the substrate 200 or the like. In the present embodiment, in order to form a flow of the reaction gas so as to be in the forward direction with respect to the rotation direction of the substrate 200, two processing regions (first processing region 201a and second processing region 201b) It is preferable to make the angle between the partition plates 205 smaller than 90 degrees. It is also preferable to supply inert gas to the untreated regions (the first purge region 204a and the second purge region 204b). With this configuration, it is easy to separate the first process gas and the second process gas, and to easily form the flow of the reaction gas (the first process gas and the second process gas) so as to be in the forward direction with respect to the rotation direction of the substrate 200 Loses. It is more preferable that the angle between the two partition plates 205 forming the non-processed region (the first purge region 204a and the second purge region 204b) is larger than 90 degrees.

In addition, although each processing region is divided into the partitioning plate 205, the present invention is not limited thereto, and it is sufficient that the gas supplied to each of the processing regions 201a and 201b is not mixed.

[Susceptor]

As shown in Figs. 3 to 6, a substrate (not shown) is disposed at the center of the reaction vessel 203 on the lower side of the partition plate 205 and on the bottom side in the reaction vessel 203, And a susceptor 217 as a mount stand is provided. The susceptor 217 is formed of a non-metallic material such as carbon (C), aluminum nitride (AlN), ceramics, or quartz so as to reduce metal contamination of the substrate 200. But may be formed of aluminum (Al) in the case of a substrate treatment in which metal contamination is not taken into consideration. In addition, the susceptor 217 is electrically isolated from the reaction vessel 203.

The susceptor 217 is configured to support a plurality of substrates 200 (for example, five substrates in the first embodiment) in the reaction vessel 203 on the same surface or on the same circumference. Here, the same surface is not limited to the completely same surface, and when the susceptor 217 is viewed from above, a plurality of the substrates 200 may be arranged so as not to overlap with each other as shown in FIG. 3 and FIG. Thus, the susceptor 217 includes a placement surface for placing a plurality of substrates 200 in concentric circles, and the placement surface is configured to face the ceiling of the reaction vessel 203.

Further, the supporting position of the substrate 200 on the surface of the susceptor 217 is provided corresponding to the number of the substrates 200 to be processed by the substrate placing portion 217b. The substrate mounting portion 217b may have a circular shape when viewed from the top and may have a concave shape when viewed from the side. In this case, it is preferable that the diameter of the substrate mounting portion is made larger than the diameter of the substrate 200. By positioning the substrate 200 in the substrate placing portion 217b, the positioning of the substrate 200 can be easily performed. The positional deviation caused by the centrifugal force generated by the rotation of the susceptor 217 or the like caused by protrusion of the substrate 200 from the susceptor 217 can be prevented.

The susceptor 217 is provided with a lift mechanism 268 for moving the susceptor 217 up and down. A plurality of through holes (not shown) are provided in the susceptor 217. The substrate 200 is raised and lowered at the time of loading and unloading the substrate 200 into and from the reaction vessel 203 to the bottom surface of the reaction vessel 203, A plurality of lift pins are provided. The through hole and the substrate lift pin are held in contact with the susceptor 217 in a state in which the substrate lift pin is not in contact with the susceptor 217 when the substrate lift pin rises or when the susceptor 217 is lowered by the lift mechanism 268 Respectively.

The elevating mechanism 268 is provided with a rotating mechanism 267 for rotating the susceptor 217. The rotation axis of the rotation mechanism 267 (not shown) is connected to the susceptor 217. By operating the rotating mechanism 267, the susceptor 217 is configured to rotate in a direction parallel to the placement surface of the susceptor 217. A control unit 300, which will be described later, is connected to the rotating mechanism 267 via a coupling portion 267a. The coupling portion 267a is configured as a slip ring mechanism for electrically connecting the rotating side and the fixed side with a metal brush or the like. Thereby preventing rotation of the susceptor 217 from being impeded. The control unit 300 is configured to control the energization state of the rotating mechanism 267 so as to rotate the susceptor 217 at a predetermined speed for a predetermined time. The substrate 200 placed on the susceptor 217 by rotating the susceptor 217 as described above is divided into the first processing region 201a, the first purge region 204a, the second processing region 201b And the second purge region 204b in this order.

[Heating section]

A heater 218 as a heating section is integrally embedded in the susceptor 217. When electric power is supplied to the heater 218, the substrate 200 placed on the substrate mounting portion 217b is heated. For example, the surface of the substrate 200 is heated to a predetermined temperature (for example, about room temperature to about 1,000 ° C). Further, the heater 218 may be provided with a plurality (for example, five) of the heaters 218 on the same surface so as to individually heat the respective substrates 200 mounted on the susceptor 217.

The susceptor 217 is provided with a temperature sensor 274. The heater 218 and the temperature sensor 274 are electrically connected to the temperature regulator 223, the power regulator 224 and the heater power supply 225 via the power supply line 222. And the energization state to the heater 218 is controlled based on the temperature information detected by the temperature sensor 274. [

[Process gas supply unit]

A gas supply mechanism 250 having a first processing gas introduction mechanism 251, a second processing gas introduction mechanism 252 and an inert gas introduction mechanism 253 is provided above the reaction vessel 203. The gas supply mechanism 250 is disposed above the susceptor 217 and airtightly installed in an opening formed in the upper portion of the reaction vessel 203. The first processing gas introducing mechanism 251 is provided in the partition plate 205a and includes a first gas ejecting opening 254. The second processing gas introduction mechanism 252 is provided in the second partition plate 205c and the side walls of the inert gas introduction mechanism 253 including the gas injection port 255 are provided with the first inert gas injection port 256 and the second inert gas injection port 256, And the inert gas spouting ports 257 are opposed to each other.

The first gas ejection port 254 includes a plurality of ejection holes of the first gas ejection holes 254 (1) to 254 (n), and is provided at the bottom of the partition plate 205a. That is, the first jet port 254 is provided above the susceptor 217 and faces the wafer 200 placed thereon.

A first gas ejection hole 254 (1) disposed at a position closest to the center of the susceptor in the plurality of first gas ejection holes 254 and a first gas ejection hole 254 (1) disposed at the periphery of the susceptor, )] Is arranged to be larger than the wafer diameter. That is, the width of the first gas ejection port 254 is larger than the diameter of the wafer.

The second jet port 255 includes a plurality of jetted first gas ejection holes 255 (1) to 255 (n), and is provided at the bottom of the partition plate 205c. That is, the second jet port 255 is provided so as to face the wafer 200 placed above the susceptor 217.

The second gas ejection port 255 (1) disposed at a position nearest to the center of the susceptor in the plurality of second gas ejection ports 255 and the second gas ejection port 255 (n) disposed at the periphery of the susceptor most, Is larger than the wafer diameter. That is, the width of the second gas ejection port 255 is larger than the diameter of the wafer.

The gas supply mechanism 250 supplies the first processing gas into the first processing area 201a from the first processing gas introduction mechanism 251 and the second processing area 201b from the second processing gas introduction mechanism 252, And to supply an inert gas into the first purge region 204a and the second purge region 204b from the inert gas introduction mechanism 253. [ The gas supply mechanism 250 can be supplied to each region individually without mixing the process gas and the inert gas, and is configured to be able to supply the process gas and the inert gas in parallel to the respective regions.

A first gas supply pipe 232a is connected to the upstream side of the first process gas introduction mechanism 251. [ On the upstream side of the first gas supply pipe 232a are provided a raw material gas supply source 232b, a mass flow controller 232c (MFC) which is a flow rate controller (flow control unit), and a valve 232d which is an open / close valve in this order from the upstream side.

A silicon-containing gas as the first gas (first process gas) is supplied from the first gas supply pipe 232a to the mass flow controller 232c, the valve 232d, the first gas introduction mechanism 251, 254 in the first processing area 201a. As the silicon-containing gas, for example, trisilylamine [(SiH ₃ ) ₃ N, abbreviation: TSA] gas can be used as a precursor. Further, the first process gas may be any of solid, liquid, and gas at room temperature and normal pressure, but will be described as a gas here. When the first process gas is liquid at room temperature and normal pressure, a vaporizer not shown may be provided between the source gas supply source 232b and the mass flow controller 232c.

As the silicon-containing gas, hexamethyldisilazane (C ₆ H ₁₉ NSi ₂ , abbreviated as HMDS), trisdimethylaminosilane (Si [N (CH ₃ ) ₂ ] ₃ H, abbreviation: 3DMAS ), Non-stearylbutylaminosilane (SiH ₂ [NH (C ₄ H ₉ )] ₂ , abbreviation: BTBAS). As the first gas, a material having a higher degree of adhesion than the second gas to be described later is used.

A second gas supply pipe 233a is connected to the upstream side of the second process gas introduction mechanism 252. [ On the upstream side of the second gas supply pipe 233a are provided a raw material gas supply source 233b, a mass flow controller 233c (MFC) as a flow rate controller (flow control unit), and a valve 233d as an on / off valve in this order from the upstream side.

(O ₂ ) gas, which is an oxygen-containing gas, is supplied from the second gas supply pipe 233a to the mass flow controller 233c, the valve 233d, the second gas introduction And is supplied into the second processing region 201b via the mechanism 252 and the second gas jetting port 255. [ The oxygen gas, which is the second process gas, is brought into a plasma state by the plasma generation unit 206 and is exposed on the substrate 200. The oxygen gas, which is the second process gas, may be thermally activated by adjusting the temperature of the heater 218 and the pressure in the reaction vessel 203 to a predetermined range. As the oxygen-containing gas, ozone (O ₃ ) gas or water vapor (H ₂ O) may be used. The second gas is made of a material having a lower degree of adhesion than the first gas.

The first process gas supply section 232 (also referred to as a silicon-containing gas supply system) is constituted mainly by the first gas supply pipe 232a, the mass flow controller 232c and the valve 232d. The raw material gas supply source 232b, the first process gas supply mechanism 251, and the first gas supply port 254 may be included in the first process gas supply unit.

The second process gas supply section 233 (also referred to as an oxygen-containing gas supply system) is constituted mainly by the second gas supply pipe 233a, the mass flow controller 233c and the valve 233d. The raw material gas supply source 233b, the second process gas supply mechanism 252, and the second gas supply port 255 may be included in the second process gas supply unit. And the process gas supply unit is constituted mainly by the first gas supply unit and the second gas supply unit.

[Inert gas supply part]

A first inert gas supply pipe 234a is connected to the upstream side of the inert gas introduction mechanism 253. An inert gas supply source 234b, a mass flow controller 234c (MFC) as a flow rate controller (flow rate control section), and a valve 234d as an open / close valve are provided upstream from the upstream side of the first inert gas supply pipe 234a .

An inert gas composed of, for example, nitrogen (N ₂ ) gas is supplied from the first inert gas supply pipe 234a to the mass flow controller 234c, the valve 234d, the inert gas introduction mechanism 253, the first inert gas injection port 256 And the second inert gas spouting port 257, respectively, in the first purge region 204a and the second purge region 204b. The inert gas supplied into the first purge region 204a and the second purge region 204b acts as a purge gas in the film formation step (S106) described later. In addition to the N ₂ gas, a rare gas such as helium (He) gas, Neon (Ne) gas or argon (Ar) gas can be used as the inert gas.

A downstream end of the second inert gas supply pipe 235a is connected to the downstream side of the valve 232d of the first gas supply pipe 232a. An inert gas supply source 235b, a mass flow controller 235c (MFC) which is a flow controller (flow control unit), and a valve 235d which is an open / close valve are provided in this order from the upstream side.

2 as an inert gas from the inert gas supply pipe (235a), for example, N ₂ gas is a mass flow controller (235c), the valve (235d), the first gas supply pipe (232a), the first process gas introducing mechanism 251 and the first And is supplied into the first processing region 201a through the gas jetting port 254. The inert gas supplied into the first processing region 201a acts as a carrier gas or a diluting gas in the film forming step (S106).

A downstream end of the third inert gas supply pipe 236a is connected to the downstream side of the valve 233d of the second gas supply pipe 233a. An inert gas supply source 236b, a mass flow controller 236c (MFC) which is a flow rate controller (flow control section), and a valve 236d which is an open / close valve are provided in this order from the upstream side.

3 as an inert gas from the inert gas supply pipe (236a), for example, N ₂ gas is a mass flow controller (236c), the valve (236d), the second gas supply pipe (233a), the second process gas introducing mechanism 252 and the second And is supplied into the second processing region 201b through the gas jetting port 255. [ The inert gas supplied into the second processing region 201b acts as a carrier gas or a diluting gas in the film forming step (S106) as in the inert gas supplied into the first processing region 201a.

The first inert gas supply unit 234 is constituted mainly by the first inert gas supply pipe 234a, the mass flow controller 234c and the valve 234d. The inert gas supply source 234b, the inert gas introduction mechanism 253, the first inert gas injection port 256 and the second inert gas injection port 257 may be included in the first inert gas supply unit 234.

The second inert gas supply portion 235 is constituted mainly by the second inert gas supply pipe 235a, the mass flow controller 235c and the valve 235d. The inert gas supply source 235b, the first gas supply pipe 232a, the first process gas supply mechanism 251 and the first gas discharge port 254 may be included in the second inert gas supply unit 235.

The third inert gas supply section 236 is mainly constituted by the third inert gas supply pipe 236a, the mass flow controller 236c and the valve 236d. The inert gas supply source 236b, the second gas supply pipe 233a, the second process gas supply mechanism 252 and the second gas discharge port 255 may be included in the third inert gas supply unit. And the inert gas supply portion is constituted mainly by the first to third inert gas supply portions.

[Gas Supply Section]

The gas supply section is constituted by the process gas supply section and the inert gas supply section.

[Gas exhaust part]

As shown in Figs. 4 to 6, the partition 205 is provided with an exhaust port for exhausting gas. Specifically, a plurality of first exhaust ports 259 are provided at the bottom of the partition plate 205d. That is, the first exhaust port 259 is provided so as to face the wafer 200 placed above the susceptor 217.

A first gas outlet 259 (1) disposed at a position closest to the center of the susceptor in the plurality of first gas exhaust ports 259 and a first gas outlet 259 (n) disposed at the periphery of the susceptor; Is larger than the wafer diameter.

A plurality of second exhaust ports 260 are provided at the bottom of the partition plate 205d. That is, the second exhaust port 260 is disposed above the susceptor 217 and faces the mounted wafer 200.

A second gas exhaust port 260 (1) disposed closest to the center of the susceptor in the plurality of second gas exhaust ports 260 and a second gas exhaust port 260 (n) disposed on the peripheral side of the susceptor, Is larger than the wafer diameter.

As will be described later, the first exhaust port 259 exhausts the gas supplied from the first gas ejection port 254 to the first process region 201a. And the second exhaust port 260 exhausts gas supplied from the second gas ejection port 255 to the second process region 201b.

6, the gas exhausted from the exhaust port 259 is exhausted by the first gas exhaust mechanism 261 formed in the partition plate 205b and the pump 246 described later via the first exhaust pipe 262, do.

The gas exhausted from the exhaust port 260 is sent to a pump 246 to be described later via a second gas exhaust mechanism (not shown) and a second exhaust pipe (not shown) formed in the partition plate 205d in the same manner as the exhaust port 259, .

The reaction vessel 203 is provided with an exhaust pipe 231 for exhausting the atmosphere in the processing region 201a, the processing region 201b and the purge region 204a and the purge region 204b is disposed below the reaction vessel 203, Respectively. A first exhaust pipe 262 (connected from a D-D line) is connected to the exhaust pipe 231 via a first exhaust pipe connecting mechanism 263. And a second exhaust pipe (not shown) is connected via a second exhaust pipe connecting mechanism (not shown).

A vacuum pump 246 as a vacuum evacuation device is connected via an APC (Auto Pressure Controller) valve 243 as a flow rate control valve 245 as a flow controller (flow controller) for controlling the gas flow rate and as a pressure regulator And is configured to be evacuated so that the pressure in the reaction vessel 203 becomes a predetermined pressure (vacuum degree). The APC valve 243 is an open / close valve capable of opening and closing a valve to stop the vacuum exhaust and the vacuum exhaust in the reaction vessel 203, and adjusting the opening degree of the valve to adjust the pressure. The gas exhaust portion is constituted mainly by the exhaust pipe 231, the APC valve 243, and the flow control valve 245. Further, a vacuum pump 246 may be included in the exhaust part.

[Control section]

The control unit 300, which is a control unit (control means), performs the control of each of the above-described configurations.

Next, the peripheral structure of the susceptor 217 and the operation of the susceptor 217 will be described with reference to Fig.

The first conveying chamber body 101 is provided adjacent to the reaction vessel 203 via any one of the gate valves 150 to 153. The gate valve 151 is opened to allow the inside of the reaction vessel 203 and the first conveying chamber body 101 to communicate with each other. The first substrate transfer unit 112 transfers the substrate 200 from the pod to the placement unit 217b of the susceptor 217 via the second substrate transfer unit 124. [

A plurality of mount portions 217b for mounting the substrate 200 are formed on the susceptor 217. In the first embodiment, five placement portions 217b are provided so as to be equally spaced (for example, 72 degrees apart) with respect to the net clockwise direction. By rotating the susceptor 217, five placement portions 217b Are collectively rotated in the arrow direction.

(3) Substrate processing step

Subsequently, a substrate processing process performed using the process chamber 202b having the above-described reaction container 203 as one process of the semiconductor manufacturing process according to the first embodiment will be described with reference to FIGS. 7 and 8 . FIG. 7 is a flowchart showing a substrate processing process according to the first embodiment, and FIG. 8 is a flowchart showing a process for a substrate in the film forming process in the substrate processing process according to the first embodiment. In the following description, the operation of each constituent portion of the process chamber 202 of the substrate processing apparatus 10 is controlled by the control unit 300.

Here, a silicon-containing gas, trisilylamine (TSA) to use, and the second by using an oxygen-containing gas, an oxygen gas as a process gas, the substrate 200, silicon oxide as an insulating film on the film (SiO ₂ film as a first gas, Hereinafter, simply referred to as SiO film) is formed.

[Substrate carrying-in / placing process (S102)]

The substrate lift pins 266 are raised to the conveying position of the substrate 200 to allow the substrate lift pins to pass through the through holes of the susceptors 217. As a result, the substrate lift pins are protruded only by a predetermined height from the surface of the susceptor 217. Subsequently, the gate valve 151 is opened and a predetermined number (for example, five) of substrates 200 (process substrates) are carried into the reaction vessel 203 using the first substrate transfer device 112. Then, the susceptor 217 is mounted on the same surface of the susceptor 217 so that the substrates 200 are not superposed on each other about the rotation axis (not shown) of the susceptor 217. Thereby, the substrate 200 is supported in a horizontal posture on a substrate lift pin protruding from the surface of the susceptor 217.

When the substrate 200 is carried into the reaction vessel 203, the first substrate transfer unit 112 is retracted to the outside of the reaction vessel 203, the gate valve 151 is closed, and the reaction vessel 203 is closed. Thereafter, the substrate lift pins are lowered to lower the susceptors 217 on the bottom surfaces of the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b And the substrate 200 is placed on the mounted placement portion 217b.

When introducing the substrate 200 into the reaction vessel 203, it is preferable to supply the N ₂ gas as the purge gas into the reaction vessel 203 from the inert gas supply unit while exhausting the inside of the reaction vessel 203 by the exhaust unit . I.e. N ₂ in by operating the vacuum pump (246) APC valve and evacuating the reaction vessel 203 by opening the (243) at least a first reaction vessel 203 by opening the valve (234d) of the inert gas supply It is preferable to supply gas. This makes it possible to suppress entry of particles into the processing region 201 and adhesion of particles onto the substrate 200. Here, the inert gas may be supplied from the second inert gas supply portion and the third inert gas supply portion. Further, the vacuum pump 246 is always in an operating state at least until the substrate carrying-in / placing step (S102) or the substrate carrying-out step (S108) described later is completed.

[Heating and pressure adjusting step (S104)]

Subsequently, electric power is supplied to the heater 218 buried in the susceptor 217 to heat the surface of the substrate 200 to a predetermined temperature (for example, 200 占 폚 or higher and 400 占 폚 or lower). At this time, the temperature of the heater 218 is adjusted by controlling the energization state to the heater 218 based on the temperature information detected by the temperature sensor 274.

Further, in the heat treatment of the substrate 200 made of silicon, when the surface temperature is heated to 750 DEG C or higher, impurities are diffused in the source region and the drain region formed on the surface of the substrate 200, The performance of the semiconductor device may deteriorate. By limiting the temperature of the substrate 200 as described above, diffusion of impurities in the source region and the drain region formed on the surface of the substrate 200, deterioration of circuit characteristics, and deterioration of the performance of the semiconductor device can be suppressed.

And the inside of the reaction vessel 203 is evacuated by the vacuum pump 246 so that the pressure of the reaction vessel 203 becomes a desired pressure (for example, 0.1Pa to 300Pa, preferably 20Pa to 40Pa). At this time, the pressure in the reaction vessel 203 is measured by a pressure sensor (not shown), and the opening degree of the APC valve 243 is feedback-controlled based on the measured pressure information.

Further, while rotating the substrate 200, the rotation mechanism 267 is operated to start the rotation of the susceptor 217. At this time, the rotation speed of the susceptor 217 is controlled by the control unit 300. The rotational speed of the susceptor 217 is, for example, one revolution per second. By rotating the susceptor 217, the substrate 200 is moved in the order of the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b And the substrate 200 passes through each region.

[Film forming process (S106)]

Next, a TSA gas as a first process gas is supplied into the first process region 201a, an oxygen gas as a second process gas is supplied into the second process region 201b, and an SiO film is formed on the substrate 200 The film formation process will be described by taking the process as an example. In the following description, the supply of the TSA gas, the supply of the oxygen gas, and the inert gas are supplied in parallel to the respective regions.

When the substrate 200 is heated to a desired temperature and the susceptor 217 reaches a desired rotational speed, at least the valve 232d, the valve 233d, and the valve 234d are opened at the same time, (201), an inert gas is supplied to the purge region (204). In other words, the valve 232d is opened and the TSA gas is supplied into the first processing area 201a through the first gas ejection port 254. The valve 233d is opened and oxygen gas is supplied into the second processing region 201b through the second gas injection port 255. [ In this manner, the process gas is supplied from the process gas supply unit. By opening the valve (234d), the supplying N ₂ gas, an inert gas purge in the first region (204a) and the second purge region (204b), and supplying an inert gas from the inert gas supply. At this time, the APC valve 243 is suitably adjusted to set the pressure in the reaction vessel 203 to a pressure within a range of, for example, 10 Pa to 1,000 Pa. At this time, the temperature of the heater 218 is set to a temperature at which the temperature of the substrate 200 can be within a range of, for example, 200 to 400 占 폚.

More specifically, the valve 232d is opened and the TSA gas is supplied from the first gas supply pipe 232a to the first process area 201a via the first gas introduction mechanism 251 and the first gas injection port 254 The first inert gas exhaust port 259, and the first gas exhaust pipe 261, respectively. At this time, the supply amount and the displacement amount of the TSA gas are adjusted to form a flow from the first gas injection port 254 toward the first inert gas exhaust port 259 as shown in FIG. That is, the gas flow of the TSA is in a forward direction with respect to the rotation direction of the wafer 200.

By doing so, the TSA gas having the same flow rate as the center of the wafer can be supplied to the portion close to the central portion of the susceptor 217 and the portion closer to the side end portion of the susceptor 217 within the surface of the wafer 200, It becomes possible to uniformly supply TSA gas into the wafer surface. By uniformly supplying them, it becomes possible to uniformly treat the inside of the wafer surface.

The flow rate of the TSA is controlled so as to be a predetermined flow rate by adjusting the mass flow controller 232c. The supply flow rate of the TSA gas controlled by the mass flow controller 232c is set to a flow rate within a range of, for example, 100 sccm to 5,000 sccm.

When the TSA gas is supplied into the first processing region 201a, the valve 235d is opened and the N ₂ gas as the carrier gas or the diluting gas is supplied from the second inert gas supply pipe 235a into the first processing region 201a desirable. Thus, the supply of the TSA gas into the first processing region 201a can be promoted.

While the valve 233d is opened and oxygen gas is supplied from the second gas supply pipe 233a to the second process region 201b via the second gas introduction mechanism 252 and the second gas injection port 255, The second exhaust port 260, and the second gas exhaust mechanism. At this time, the supply amount and the exhaust amount of the oxygen gas are adjusted to form a flow from the second gas injection port 255 to the second inert gas exhaust port 260 as shown in FIG. That is, the flow of oxygen gas is formed in a forward direction with respect to the rotation direction of the wafer 200.

By doing so, the TSA gas having the same flow rate as the center of the wafer can be supplied to the portion close to the central portion of the susceptor 217 and the portion closer to the side end portion of the susceptor 217 within the surface of the wafer 200, It becomes possible to uniformly supply oxygen gas into the wafer surface. By uniformly supplying them, it becomes possible to uniformly treat the inside of the wafer surface.

At this time, the mass flow controller 233c is adjusted so that the flow rate of the oxygen gas becomes a predetermined flow rate. The supply flow rate of the oxygen gas to be controlled by the mass flow controller 233c is set to a flow rate within a range of, for example, 1,000 sccm to 10,000 sccm.

When the oxygen gas is supplied into the second processing region 201b, the valve 236d is opened and the carrier gas or N ₂ gas as the diluting gas is supplied from the third inert gas supply pipe 236a into the second processing region 201b desirable. Thus, the supply of the oxygen gas into the second processing region 201b can be promoted.

In addition, the valve (232d), the valve (233d), the valve (234d), the opening, the inert gas N ₂ gas an inert gas as a purge gas from the first inert gas supply pipe (234a) introducing mechanism 253, a first inert gas jet port The exhaust gas is supplied to the first purge region 204a and the second purge region 204b via the second inert gas injection port 256 and the second inert gas injection port 257, respectively. At this time, the mass flow controller 234c is adjusted so that the flow rate of the N ₂ gas becomes a predetermined flow rate. The inside of the first processing region 201a and the inside of the second purge region 204b are separated from each other in the first purge region 204a and the second purge region 204b via the end portions of the partition plate 205 and the sidewalls of the reaction vessel 203, The introduction of the processing gas into the first purge region 204a and the second purge region 204b can be suppressed by ejecting the inert gas toward the processing region 201b.

At the start of the supply of the gas, a high frequency power is supplied from a high frequency power source (not shown) to the plasma generation unit 206 provided above the second processing region 201b. The oxygen gas supplied into the second processing region 201b and passing under the plasma generating portion 206 is brought into a plasma state in the second processing region 201b and the active species contained therein is supplied to the substrate 200 .

Oxygen gas has a high reaction temperature and is difficult to react with the processing temperature of the substrate 200 and the pressure in the reaction vessel 203 as described above. However, oxygen gas is changed into a plasma state as in the first embodiment, When the species is supplied, the film forming process can be performed even at a temperature of 400 DEG C or lower. Further, when the processing temperatures required in the first process gas and the second process gas are different, the heater 218 is controlled in accordance with the temperature of the process gas having a low process temperature, and the other process The process gas may be supplied in a plasma state. By using the plasma in this manner, the substrate 200 can be treated at a low temperature, and heat damage to the substrate 200 including wiring or the like weak to heat such as aluminum can be suppressed. In addition, generation of foreign matter such as a product due to an incomplete reaction of the process gas can be suppressed, and homogeneity and dielectric strength characteristics of the thin film formed on the substrate 200 can be improved. Further, the oxidation treatment time can be shortened by the high oxidizing power of the oxygen gas in the plasma state, and the productivity of the substrate processing can be improved.

By rotating the susceptor 217 as described above, the substrate 200 has the first processing region 201a, the first purge region 204a, the second processing region 201b, the second purge region 204b, And repeats the movement in the order of. 7, the supply of TSA gas, the supply of N ₂ gas (purge), the supply of oxygen gas in a plasma state, and the supply of N ₂ gas (purge) are alternately performed on the substrate 200, A predetermined number of times. In the present invention, since the processing gas at a flow rate similar to that at the center of the wafer can be supplied to a portion close to the central portion of the susceptor 217 or a portion close to the side end portion of the susceptor 217 within the surface of the wafer 200, It is possible to uniformly supply the processing gas to the processing chamber. It is possible to form a uniform film in the wafer surface by uniformly supplying it. Here, a specific example of the film formation processing sequence will be described with reference to FIG.

[Passing through the first process gas region (S202)]

The TSA gas is supplied to the surface of the substrate 200 that has passed through the first processing region 201a and the TSA gas is supplied to the center of the wafer in the image of the substrate 200 and a position close to the center of the susceptor 217, The silicon-containing layer is uniformly formed at a position close to the side end portion. In the first processing area 201a, gas is ejected from the first processing gas introduction mechanism 251 through the first gas ejection port 254 toward the substrate. The jetted gas is supplied to the wafer 200 through which it contributes to the formation of the silicon-containing layer in the wafer 200, and the gas not contributed is exhausted from the first exhaust port 259.

[Passing through the first purge zone (S204)]

Next, the substrate 200 on which the silicon-containing layer is formed passes through the first purge region 204a. At this time, N ₂ gas, which is an inert gas, is supplied to the substrate 200 passing through the first purge region.

[Passing through the second process gas region (S206)]

Next, oxygen gas is uniformly injected from the center of the wafer, the central portion of the susceptor 217, and the portion near the side end of the susceptor 217 in the image of the substrate 200 passing through the second processing region 201b And a silicon oxide layer (SiO 2 layer) is uniformly formed on the substrate 200. The oxygen gas reacts with at least a portion of the silicon-containing layer formed on the substrate 200 in the first processing region 201a. Whereby the silicon-containing layer is oxidized and reformed into a silicon oxide layer containing silicon and oxygen. The oxygen gas not contributing to the reaction is also exhausted from the second exhaust port 260.

[Passing through the second purge zone (S208)]

The substrate 200 having the silicon oxide layer formed thereon in the second processing region 201b passes through the second purge region 204b. At this time, N ₂ gas, which is an inert gas, is supplied to the substrate 200 passing through the second purge region.

[Confirmation of the number of cycles (S210)]

Thus, one cycle of the susceptor 217 is set as one cycle. That is, the passage of the first processing area 201a, the first purge area 204a, the second processing area 201b, and the second purge area 204b through the substrate 200 is set to be one cycle, The silicon oxide film having a predetermined film thickness can be formed on the substrate 200. [ Here, it is confirmed whether or not the aforementioned cycle is performed a predetermined number of times. When the cycle is performed a predetermined number of times, it is determined that the desired film thickness has been reached, and the film forming process is terminated. It is determined that the predetermined film thickness has not been reached, that is, the desired film thickness has not been reached, and the process returns to S202 to continue the cycle process.

It is determined that the silicon oxide film having the desired film thickness is formed on the substrate 200 by performing the above-described cycle a predetermined number of times in S210 and then at least the valve 232d and the valve 233d are closed and the TSA gas is supplied to the first processing region 201a and the supply of the oxygen gas to the second processing region 201b is stopped. At this time, the power supply to the plasma generation unit 206 also stops. Further, the amount of electric current to be supplied to the heater 218 is controlled to lower the temperature or stop the supply of electric power to the heater 218. Further, the rotation of the susceptor 217 is stopped to terminate the film forming process.

[Substrate removal step (S108)]

When the film forming process (S106) is finished, the substrate is taken out as follows. The substrate lift pins 266 are raised to support the substrate 200 on the substrate lift pins 266 protruding from the surface of the susceptor 217. The gate valve 151 is then opened and the substrate 200 is taken out of the reaction vessel 203 using the first substrate transfer device 112 to complete the substrate processing process according to the first embodiment. The conditions such as the temperature of the substrate 200, the pressure in the reaction vessel 203, the flow rate of each gas, the electric power to be applied to the plasma generation section 206, the processing time, etc., .

(4) Effect according to the first embodiment

According to the first embodiment, at least one of the following effects (a) to (g) is obtained.

(a) Since a gas flow is formed from at least one of the plurality of regions provided in the processing chamber toward the downstream side from the upstream side in the rotating direction of the substrate, gas can be uniformly supplied to the substrate surface. Therefore, it becomes possible to make the film thickness of the film to be formed uniform within the surface of the substrate.

(b) Since the width of the gas ejection port is larger than the substrate diameter, it is possible to more reliably and uniformly supply gas to all the surfaces of the substrate passing under the gas ejection port.

(the first processing region 201a or the second processing region 201b) by adjusting the supply amount and the displacement amount of the reaction gas and / or the non-reacted gas, and (c) the rotation direction of the susceptor 217, So that the direction of the reaction gas flowing through the reaction tube is the same. Therefore, since the flow of the gas is formed from the upstream side to the downstream side in the rotational direction in the processing region, it becomes possible to supply the processing gas into the substrate surface more reliably and uniformly.

(d) treating the substrate when the substrate is rotated in a direction from the gas supply unit to the gas exhaust unit when the substrate passes through the process area, and rotating the substrate in a direction from the gas exhaust unit to the gas supply unit So as not to process the substrate. Therefore, the separation of the first processing region 201a and the second processing region 201b can be ensured, and thus the quality of the formed film is maintained.

(e) the processing chamber is divided into a plurality of predetermined regions, the predetermined region is formed above the substrate table and is formed between the gas supply portion and the gas exhaust portion, and is provided with a processing region for supplying the reaction gas, There is a non-processed region in a non-reactive gas atmosphere, and the processed region is formed to be smaller than the non-processed region. Therefore, it is easy to form a flow of gas from the upstream side to the downstream side in the rotational direction in the processing region, so that it becomes possible to uniformly supply the processing gas to the substrate surface.

(f) The angle formed by the gas supply part forming the process area and the gas exhaust part is smaller than 90 degrees. Therefore, it is easy to form a flow of gas from the upstream side to the downstream side in the rotational direction in the processing region, so that it becomes possible to uniformly supply the processing gas to the substrate surface.

(g) Since at least the reactive gas is supplied to the processing region and the non-reactive gas is supplied to the non-processing region, the flow is controlled to form a gas flow from the upstream side to the downstream side in the rotational direction in the processing region, It is possible to supply the process gas into the process chamber.

≪ Another embodiment of the present invention >

Although the embodiments of the present invention have been described in detail, the present invention is not limited to the above-described embodiments, and various modifications are possible without departing from the gist of the present invention.

For example, in the above-described embodiment, the SiO 2 film is formed on the substrate 200 using the silicon-containing gas and the oxygen-containing gas as the process gas, but the present invention is not limited thereto. A hafnium oxide (HfO) film, a zirconium oxide (Zr) -containing gas, a zirconium oxide (Zr) -containing gas, an oxygen-containing gas, a titanium A high-k film such as a film (ZrO film), a titanium oxide film (TiO film), or the like may be formed on the substrate 200. In addition to the oxygen-containing gas, an ammonia (NH ₃ ) gas such as nitrogen (N) -containing gas may be used as the processing gas for plasma formation.

Further, in the above-described embodiment, oxygen is supplied to the processing chamber to generate plasma in the plasma generating section 206, but the present invention is not limited to this, and a remote plasma method for generating plasma outside the processing chamber or ozone having a high energy level may be used.

Although the inert gas introduction mechanism 253 of the gas supply mechanism 250 is common to the first purge region 204a and the second purge region 204b in the above embodiment, The first purge region 204a and the second purge region 204b may be separately provided. The inert gas introducing mechanism may be separately provided in the first processing region 201a, the second processing region 201b, the first purge region 204a, and the second purge region 204b. Thus, it is possible to control the flow rate of the gas supplied to each of the regions, for example, by allowing the inert gas to flow from the non-processing region to the processing region, It is easy to make a structure that flows.

In the above-described embodiment, the first gas ejection port 254 is provided at the bottom of the partition plate 205a, but the present invention is not limited thereto. The gas may flow from the first gas injection port 254 toward the downstream side in the rotating direction. For example, the gas injection port may be directed to the downstream side.

Further, the gas may be supplied using, for example, a nozzle without providing the first gas jet port on the partition plate. At this time, the divided structure for dividing the region is not limited to the partition plate, and a separate structure for not mixing the processing gas may be separately provided.

Further, in the above-described embodiment, a plurality of first gas spouts 254 are provided at the bottom of the partition plate 205a, but the present invention is not limited to this structure, and may be a slit shape. In the case of the slit structure, the slit width and the position may be set so that the wafer passes through the lower side between the slit end portions.

In the above-described embodiment, the second gas ejection port 255 is provided at the bottom of the partition plate 205c, but is not limited thereto. The structure may be such that the gas is canceled from the second gas ejection port 255 toward the downstream in the rotating direction. For example, the gas ejection port may be directed to the downstream side.

Further, the gas may be supplied using, for example, a nozzle without providing the first gas jet port on the partition plate. At this time, the divided structure for dividing the region is not limited to the partition plate, and a separate structure for not mixing the processing gas may be separately provided.

In the above-described embodiment, a plurality of second gas spouts 255 are provided at the bottom of the partition plate 205c. However, the present invention is not limited to this structure, and may be a slit shape. In the case of the slit structure, the slit width and the position may be set so that the wafer 200 passes the lower side between the slit end portions.

Although the first exhaust port 259 is provided in the partition plate 205b in the above-described embodiment, the present invention is not limited thereto. The first gas exhaust port 259 may have a structure capable of sucking the gas flowing from the upstream direction of the rotation direction, for example, the gas exhaust port may be directed to the upstream side.

An exhaust structure dedicated to exhaust may be provided. As a dedicated exhaust structure, for example, gas may be exhausted using a slit-shaped exhaust port. At this time, the divided structure for dividing the region is not limited to the partition plate, and a separate structure for not mixing the processing gas may be separately provided.

Although the second exhaust port 260 is provided at the bottom of the partition plate 205d in the above-described embodiment, the present invention is not limited thereto. The second gas exhaust port 260 may have a structure capable of sucking the gas flowing from the upstream in the rotating direction. For example, the gas exhaust port may be directed to the upstream side.

In the above-described embodiment, the second exhaust port 260 is provided in the partition plate 205d. However, the present invention is not limited to this, and an exhaust structure exclusively for exhaust may be provided. As a dedicated exhaust structure, for example, gas may be exhausted using a slit-shaped exhaust port. At this time, the divided structure for dividing the region is not limited to the partition plate, and the divided structure may be separately provided without mixing the processing gas.

In the above-described embodiment, the gas flow direction is the substrate rotation direction, but the gas flow direction is not limited to this, and the gas flow may be formed in the direction opposite to the substrate rotation direction depending on the quality of the supplied gas, the rotation state of the susceptor, and the like.

Further, in the above-described embodiment, the supply amount and the exhaust amount of the reaction gas are adjusted, but the present invention is not limited thereto. The exhaust amount of the gas exhaust portion (the first exhaust port 259 and the second exhaust port 260) may be made larger than the exhaust amount of the exhaust pipe 231. [

The form of the present invention will be described below as an appendix.

<Annex 1>

A processing chamber including a plurality of regions;

A substrate table mounted in the processing chamber, the substrate table including a placement surface for placing a plurality of substrates in a concentric circle shape, the placement surface being opposed to a ceiling of the processing chamber;

A rotation mechanism for rotating the substrate table in a direction parallel to the placement surface;

A gas supply unit disposed upstream of the substrate table in a direction in which the substrate table is rotated in the processing area; And

A gas evacuation unit disposed downstream of the substrate table in the direction of rotation of the substrate table in the processing area and above the substrate table;

And the substrate processing apparatus.

<Note 2>

The substrate processing apparatus according to claim 1, wherein the gas supply portion includes a gas ejection port, and the width of the gas ejection port is larger than the width of the substrate.

<Annex 3>

Wherein the region has a region for supplying a reactive gas and a region for supplying a non-reactive gas, and a region for supplying the reactive gas is formed between the gas ejection port and the gas exhaust port.

<Annex 4>

A processing chamber including a plurality of regions;

A substrate table mounted in the processing chamber, the substrate table including a placement surface for placing a plurality of substrates in a concentric circle shape, the placement surface being opposed to a ceiling of the processing chamber;

A rotation mechanism for rotating the substrate table in a direction parallel to the placement surface;

A plurality of division sections dividing the region;

A gas outlet provided in the partitioning portion; And

A gas exhaust port provided in the divided portion disposed downstream in the rotating direction of the divided portion;

And the substrate processing apparatus.

<Annex 5>

The substrate processing apparatus according to claim 4, wherein the dividing section is formed radially.

<Annex 6>

Disposing a plurality of substrates in concentric circles on a substrate table provided in a substrate processing chamber divided into a plurality of regions; A step of rotating the plurality of concentrically arranged substrates; And a gas supply unit provided upstream of the substrate table in a rotation direction of the substrate and supplying gas from a gas supply unit provided at a position opposite to the substrate table and exhausting gas from a gas exhaust unit provided at a position opposite to the substrate table, And a step of processing the substrate.

<Annex 7>

A step of disposing a plurality of substrates in concentric circles on a substrate table provided in a substrate processing chamber divided into a plurality of regions by partitioning portions; A step of rotating the plurality of concentrically arranged substrates; And a step of supplying a gas from a partition provided upstream in the rotational direction of the substrate and exhausting gas from the partition provided downstream.

<Annex 8>

A processing chamber for processing the substrate;

A substrate table including a placement surface for placing a plurality of substrates in concentric circles, the placement surface of which faces the ceiling of the processing chamber;

A rotation mechanism for rotating the substrate table in a direction parallel to the placement surface;

A gas supply unit installed in the treatment chamber and upstream of a direction in which the substrate table is rotated and installed above the substrate table;

A gas evacuating unit installed in the treatment chamber, the gas evacuating unit disposed downstream of the substrate table in a rotating direction and above the substrate table; And

Wherein the control unit controls the gas supply unit, the gas exhaust unit, and the rotation mechanism to supply the reaction gas from the gas supply unit when the substrate is passed through the gas supply unit and the predetermined region formed in the process chamber by the gas exhaust unit, A control unit for controlling the processing of the substrate by exhausting the reaction gas from the gas exhaust unit;

And the substrate processing apparatus.

<Annex 9>

Processing the substrate rotated in the direction from the gas supply unit to the gas exhaust unit when the substrate passes through the predetermined area and processing the substrate rotated in the direction from the gas exhaust unit to the gas supply unit The substrate processing apparatus according to Supplementary Note 8.

<Annex 10>

Wherein the predetermined area is a processing area formed above the substrate table and formed between the gas supply part and the gas exhaust part to supply the reaction gas and a non-processing area for supplying the non- And the processing region is formed to be smaller than the non-processing region.

<Annex 11>

Wherein an angle formed by the gas supply part and the gas exhaust part constituting the processing area is smaller than 90 DEG and an angle between the gas exhaust part constituting the non-processed area and the gas supply part is larger than 90 DEG &Lt; / RTI &gt;

<Annex 12>

The substrate processing apparatus according to note 10 or 11, wherein the rotating direction of the substrate table on which the substrate is placed is made to be the same as the direction of the reaction gas flowing through the processing area.

<Annex 13>

Wherein at least the reaction gas is supplied to the processing region and the non-reactive gas is supplied to the non-processing region, and the reaction gas and the non-reactive gas are exhausted from the gas exhaust portion.

<Annex 14>

Wherein the control unit adjusts the supply amount and the exhaust amount of the reaction gas when the substrate is passed through the predetermined region formed in the processing chamber to form the flow of the reaction gas in a forward direction with respect to the rotation direction of the substrate, Device.

<Annex 15>

Further comprising an exhaust pipe for exhausting the gas in the non-process area below the process chamber, wherein the control section makes the exhaust amount of the gas exhaust section larger than the exhaust amount of the exhaust pipe.

<Annex 16>

A step of arranging a plurality of substrates in concentric circles on a substrate table provided in a processing chamber divided into a plurality of regions; A step of rotating the plurality of concentrically arranged substrates; And a gas supply unit provided at a position opposite to the substrate table in the same direction as the rotation direction of the substrate table and the gas supply unit to the gas exhaust unit, And exhausting the reaction gas from a gas exhaust portion provided at a position where the reaction gas is exhausted from the reaction chamber.

<Annex 17>

A step of arranging a plurality of substrates in concentric circles on a substrate table provided in a processing chamber divided into a plurality of regions; A step of rotating the plurality of concentrically arranged substrates; And a gas supply unit provided at a position opposite to the substrate table and in the same direction as the rotation direction of the substrate table and the gas supply unit to the gas exhaust unit, And exhausting the gas from the gas exhaust portion provided at the position.

10: substrate processing apparatus 103: first transport chamber
121: second transport chamber 202:

Claims (10)

A processing chamber for processing the substrate;
A substrate table including a placement surface for placing a plurality of substrates in concentric circles, the placement surface of which faces the ceiling of the processing chamber;
A rotation mechanism for rotating the substrate table in a direction parallel to the placement surface;
A gas supply unit installed in the process chamber and disposed above the substrate table so that a gas supplied in a direction in which the substrate table is rotated flows; And
Wherein the gas supply unit is provided in the processing chamber and is provided at a distance from the position of the gas supply unit in a direction in which the substrate table is rotated, A gas exhaust unit installed in the exhaust gas recirculation unit; And
Wherein the control unit controls the gas supply unit, the gas exhaust unit, and the rotation mechanism to supply the reaction gas from the gas supply unit when the substrate is passed through the gas supply unit and the predetermined region formed in the process chamber by the gas exhaust unit, A control unit for controlling the processing of the substrate by exhausting the reaction gas from the gas exhaust unit;
Lt; / RTI &gt;
Wherein the predetermined area is a processing area formed above the substrate table and formed between the gas supply part and the gas exhaust part to supply the reaction gas and a non-processing area for supplying the non- And the processing region is formed to be smaller than the non-processing region. The gas processing apparatus according to claim 1, further comprising: a processing unit for processing the substrate rotated in the direction from the gas supply unit to the gas exhaust unit when the substrate passes through the predetermined area, Wherein the substrate processing apparatus is configured not to process the substrate. delete The gas processing apparatus according to claim 1, wherein the angle formed by the gas supply unit and the gas exhaust unit forming the processing zone is smaller than 90 DEG, and the angle formed by the gas exhaust unit and the gas supply unit forming the non- The substrate processing apparatus further comprising: The substrate processing apparatus according to claim 1, wherein a rotation direction of the substrate table on which the substrate is mounted is made to be equal to a direction of the reaction gas flowing through the processing region. 2. The substrate processing apparatus according to claim 1, wherein at least a reactive gas is supplied to the processing region and a non-reactive gas is supplied to the non-processing region, and the reactive gas and the non-reactive gas are exhausted from the gas exhaust portion. 2. The method according to claim 1, wherein, when the substrate is passed through the predetermined region formed in the processing chamber, the control unit forms the flow of the reaction gas in a forward direction with respect to the rotation direction of the substrate by adjusting the supply amount and the exhaust amount of the reaction gas / RTI &gt; 8. The substrate processing apparatus according to claim 7, further comprising an exhaust pipe for exhausting the gas in the non-process area below the process chamber, wherein the control section makes the exhaust amount of the gas exhaust section larger than the exhaust amount of the exhaust pipe. A step of arranging a plurality of substrates in concentric circles on a substrate table provided in a processing chamber divided into a plurality of regions;
A step of rotating the substrate table in which the plurality of substrates are arranged in a concentric shape so as to allow the plurality of regions to pass through the plurality of substrates; And
Wherein the substrate processing apparatus is characterized in that in the processing region formed between the gas supply unit and the gas exhaust unit among the plurality of regions, the rotation direction of the substrate table and the direction from the gas supply unit to the gas exhaust unit are the same direction and are opposed to the substrate table The reaction gas is supplied from the gas supply unit installed in the reaction chamber, and the reaction gas is exhausted from the gas exhaust unit provided at a position spaced apart from the position of the gas supply unit in the rotating direction of the substrate table and opposed to the substrate table, And a non-processing region formed between the gas supply portion and the gas exhaust portion of the plurality of regions, wherein the non-reactive gas is supplied to the non-processing region, ;
/ RTI &gt;
Wherein the processing region is formed to be smaller than the non-processing region. delete

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